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@@ -53,15 +53,18 @@ The model provides dual-structured output:
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  **Reasoning Process (`<think>` section)** - Step-by-step analysis:
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  ```
 
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  Analyzing SiC composition and hexagonal crystal structure (P63mc)...
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  Electronic properties: 3.26 eV indirect bandgap indicates wide-bandgap semiconductor behavior...
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  Thermodynamic stability: -0.73 eV/atom formation energy shows strong bonding...
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  Mechanical properties: High elastic modulus (448 GPa) suggests exceptional stiffness...
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  Thermal behavior: 490 W/m路K conductivity ideal for heat dissipation applications...
 
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  ```
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  **Structured Analysis (`<answer>` section)** - Comprehensive summary:
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  ```
 
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  **SiC Materials Analysis (ID: mp-8062)**
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  **Composition & Structure**
@@ -85,6 +88,7 @@ Thermal behavior: 490 W/m路K conductivity ideal for heat dissipation application
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  **Key Advantages**
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  Superior combination of thermal, mechanical, and electronic properties makes SiC ideal for demanding high-temperature and high-power applications.
 
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  ```
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  ## Quick Start
 
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  **Reasoning Process (`<think>` section)** - Step-by-step analysis:
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  ```
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+ <think>
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  Analyzing SiC composition and hexagonal crystal structure (P63mc)...
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  Electronic properties: 3.26 eV indirect bandgap indicates wide-bandgap semiconductor behavior...
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  Thermodynamic stability: -0.73 eV/atom formation energy shows strong bonding...
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  Mechanical properties: High elastic modulus (448 GPa) suggests exceptional stiffness...
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  Thermal behavior: 490 W/m路K conductivity ideal for heat dissipation applications...
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+ </think>
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  ```
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  **Structured Analysis (`<answer>` section)** - Comprehensive summary:
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  ```
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+ <answer>
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  **SiC Materials Analysis (ID: mp-8062)**
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  **Composition & Structure**
 
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  **Key Advantages**
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  Superior combination of thermal, mechanical, and electronic properties makes SiC ideal for demanding high-temperature and high-power applications.
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+ </answer>
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  ```
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  ## Quick Start