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ALD-E-ImageMiner

{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_5.jpg","caption":"FIG. 5. (Color online) AFM images of as-deposited  $\\mathrm{Ga}_{2}\\mathrm{O}_{3}$  thin film (a) and of those annealed at  $500^{\\circ}\\mathrm{C}$  (b),  $700^{\\circ}\\mathrm{C}$  (c), and  $900^{\\circ}\\mathrm{C}$  (d) in RTA system for  $1\\mathrm{min}$ . The RMS values were 46, 4.1, 5.1, and  $4.6\\mathrm{\\AA}$  for as-deposited thin film and the thin films annealed at 500, 700, and  $900^{\\circ}\\mathrm{C}$ , respectively.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_5","subset":"unknown","split":"validation","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":0,"width":374,"height":308},{"panel_id":"b","x":-1,"y":333,"width":381,"height":307},{"panel_id":"c","x":-1,"y":662,"width":381,"height":311},{"panel_id":"d","x":8,"y":1005,"width":371,"height":290}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":380,"height":1300,"image_format":"jpeg","image_sha256":"494085c88bfb219ac7d0270201c34ef7cadeafeeab5b61d507d1fb65603afd5b","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_4_figure_4.jpg","caption":"Figure 4. Elemental TOF-SIMS mappings showing (a)  $\\mathbf{Ge}^{+}$  in gray, (b)  $\\mathrm{Al}^{+}$  in yellow, and (c)  $\\mathrm{Si}^{+}$  in green, after  $15\\mathrm{SiO}_2$  ABC-type ALD cycles using Hacac as inhibitor; scale bar is  $10\\mu \\mathrm{m}$ . (d) Corresponding line scans for  $\\mathbf{Ge}^{+}$ ,  $\\mathrm{Al}^{+}$ , and  $\\mathrm{Si}^{+}$  of the sample.","id":"validation/atomic-layer-deposition/simulation-usecase/4/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/4/figure_4","subset":"unknown","split":"validation","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure displays a series of microscopy images labeled a, b, and c, alongside a line chart d.\"},{\"panel_id\":\"b\",\"text\":\"The figure displays a series of microscopy images labeled a, b, and c, alongside a line chart d.\"},{\"panel_id\":\"c\",\"text\":\"The figure displays a series of microscopy images labeled a, b, and c, alongside a line chart d.\"},{\"panel_id\":\"d\",\"text\":\"This figure shows an EDX line scan of elemental distributions for Aluminum (Al), Germanium (Ge), and Silicon (Si) over a distance of ~70 μm. The Al signal exhibits a clear square-wave periodicity, alternating between high intensity (~4.5 a.u.) and near zero, indicating a patterned Al structure with ~10 μm line width and ~20 μm pitch. In contrast, the Ge and Si signals remain relatively constant and low across the scan, confirming that they constitute the continuous underlying substrate beneath the patterned Al features.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"},{\"panel_id\":\"d\",\"text\":\"| Distance (µm) | Ge⁺ Intensity (a.u.) | Al⁺ Intensity (a.u.) | Si⁺ Intensity (a.u.) |\\n|--------------|----------------------|----------------------|----------------------|\\n| 150          | 1                    | 0.2                  | 1                    |\\n| 160          | 1                    | 4.5                  | 1                    |\\n| 170          | 1                    | 0.2                  | 1                    |\\n| 180          | 1                    | 4.5                  | 1                    |\\n| 190          | 1                    | 0.2                  | 1                    |\\n| 200          | 1                    | 4.5                  | 1                    |\\n| 210          | 1                    | 0.2                  | 1                    |\\n| 220          | 1                    | 4.5                  | 1                    |\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Deposition: Deposition of a blanket Aluminum film.\\n\\nPhotolithography: Patterning a photoresist mask.\\n\\nEtching: Removing the exposed Aluminum (or performing Lift-off).\\n\\nStripping: Removal of the photoresist to leave the isolated metal lines shown in the graph.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Signal Convolution / Blurring. The current pitch is approximately 20 μm (e.g., peaks from ~155 to 175 μm). If the pattern density were doubled (pitch = 10 μm, line width = 5 μm) and the measurement beam were also 5 μm, the beam would simultaneously overlap both the line edges and the gaps.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Substrate/Underlayer. The continuous Germanium signal implies that Ge acts as the substrate or a continuous underlying layer that spans the entire sample. The Aluminum exists as discrete features patterned on top of this Germanium layer. If Ge were patterned on top of Al, the Ge signal would likely vanish in the gaps between the Al lines.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The steep, well-defined transitions indicate a high-contrast, sharp boundary between the deposited film and the inhibited area. This signifies excellent selectivity and minimal lateral growth (overgrowth). For microelectronics, such sharp interfaces are essential for defining small, high-fidelity features in advanced device fabrication without short circuits or leakage paths.\"}]}]","bbox":[{"panel_id":"a","x":60,"y":0,"width":407,"height":392},{"panel_id":"b","x":566,"y":0,"width":405,"height":393},{"panel_id":"c","x":59,"y":453,"width":408,"height":394},{"panel_id":"d","x":518,"y":454,"width":464,"height":388}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/images/figure_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/4/Alfredo Mameli et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"4","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":983,"height":847,"image_format":"jpeg","image_sha256":"b51a119869a759b65e7ae070ca689bf68cdbca6fa97266ae20f8797f53c89625","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}