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| {"file_name":"images/train_atomic-layer-deposition_experimental-usecase_29_figure_10.jpg","caption":"Figure 10. AFM image of a $350\\mathrm{\\AA}$ thick tungsten nitride film deposited at $600~\\mathrm{K}$ after $140\\mathrm{AB}$ cycles on a $125\\mathrm{\\AA}$ thick $\\mathrm{SiO_2}$ film on $\\mathrm{Si}(100)$ . The reactant exposures of $12,000\\mathrm{L}\\mathrm{NH_3}$ and $4300\\mathrm{L}\\mathrm{WE_2}$ were sufficient for complete half-reactions during each AB cycle. The light-to-dark range is $25\\mathrm{\\AA}$ .","id":"train/atomic-layer-deposition/experimental-usecase/29/figure_10","sample_id":"atomic-layer-deposition/experimental-usecase/29/figure_10","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":6,"width":676,"height":513}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/images/figure_10.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/29/J. W. Klaus et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:image_caption"},"width":683,"height":519,"image_format":"jpeg","image_sha256":"4d15477c997e8bf84ea41df2d602463ffed2a5179d1360a9f0f4457315188444","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/train_atomic-layer-deposition_experimental-usecase_63_fig_4.jpg","caption":"FIG. 4. (Color online) 3D surface morphologies of (a) as-deposited $(250^{\\circ}\\mathrm{C})$ and (b) annealed $\\sim 26 \\mathrm{nm}$ thick $\\mathrm{Ga}_2\\mathrm{O}_3$ thin films.","id":"train/atomic-layer-deposition/experimental-usecase/63/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/63/fig_4","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"},{"panel_id":"b","label":"3d scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"3D AFM surface topography of the as deposited Ga2O3 film (about 26 nm, deposited at 250 C), shown over a 1 µm by 1 µm scan area with height contrast in nm. The reported rms roughness is 0.16 nm.\"},{\"panel_id\":\"b\",\"text\":\"3D AFM surface topography of the annealed Ga2O3 film (about 26 nm), shown over a 1 µm by 1 µm scan area with height contrast in nm. The reported rms roughness increases to 0.37 nm after annealing, consistent with a rougher, more grain like surface.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| x-axis | y-axis | z-axis |\\n|--------|--------|--------|\\n| 0.0 | 0.0 | 0.0 |\\n| 250.0 | 250.0 | 0.0 |\\n| 500.0 | 500.0 | 0.0 |\\n| 750.0 | 750.0 | 0.0 |\\n| 1000.0 | 1000.0 | 0.0 |\"},{\"panel_id\":\"b\",\"text\":\"| x-axis | y-axis | z-axis |\\n|--------|--------|--------|\\n| 0.0 | 0.0 | 0.0 |\\n| 250.0 | 250.0 | 0.0 |\\n| 500.0 | 500.0 | 0.0 |\\n| 750.0 | 750.0 | 0.0 |\\n| 1000.0 | 1000.0 | 0.0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The color scale represents surface height in nm across the scanned area.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The rms roughness increases from 0.16 nm (as deposited) to 0.37 nm (annealed).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The paper attributes the roughness increase to grain formation during crystallization upon annealing. As grains form and grow, the surface develops larger height variations compared with the amorphous as deposited film. This interpretation links the morphology change directly to the structural transition induced by annealing.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increased roughness can affect interface quality when Ga2O3 is integrated with metals or semiconductors, because local thickness and contact area vary across the surface. Rougher surfaces can also increase scattering and raise leakage risk in thin insulating layers, depending on the device stack. In exchange, annealing can deliver the crystalline phase and associated property improvements, so roughness becomes a tradeoff to manage.\"}]}]","bbox":[{"panel_id":"a","x":5,"y":0,"width":635,"height":388},{"panel_id":"b","x":6,"y":402,"width":632,"height":381}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/images/fig_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/63/Donmez et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"63","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:image_caption"},"width":642,"height":786,"image_format":"jpeg","image_sha256":"41c2b92e624d68da87e702841311b2ef087c704c734547bc3e5b40f78b293411","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/train_atomic-layer-etching_experimental-usecase_13_figure_11.jpg","caption":"Figure 11. Atomic force microscopy (AFM) images of the surfaces etched using (a) ALE and (b) digital etching and (c) the as-grown surface before etching.","id":"train/atomic-layer-etching/experimental-usecase/13/figure_11","sample_id":"atomic-layer-etching/experimental-usecase/13/figure_11","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"},{"panel_id":"b","label":"3d scatter plot"},{"panel_id":"c","label":"3d scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":30,"width":563,"height":315},{"panel_id":"b","x":626,"y":11,"width":560,"height":312},{"panel_id":"c","x":296,"y":436,"width":542,"height":362}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/images/figure_11.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/13/Low-Damage and Self-Limiting (Al)GaN Etching Process.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"13","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":1186,"height":798,"image_format":"jpeg","image_sha256":"5c5b1963b56929ede4c66d4fe42024c5680165bbee269dd74653a26c2b219aa3","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_6.jpg","caption":"FIG. 6. (Color online) Surface morphology of the trench bottom for $\\Gamma_{i} / \\Gamma_{n} = (a)0.01$ b $10^{-3}$ and (c) $10^{-4}$ in the passivation step after 25 pulses (87.5 s etch time). The color bar indicates the profile height, with dark representing deeper etching and light representing higher features.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_6","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"},{"panel_id":"b","label":"3d scatter plot"},{"panel_id":"c","label":"3d scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows the surface morphology of the trench bottom for Γi/Γn = 0.01 in the passivation step after 25 pulses (87.5 s etch time).\"},{\"panel_id\":\"b\",\"text\":\"The image shows the surface morphology of the trench bottom for Γi/Γn = 10^-3 in the passivation step after 25 pulses (87.5 s etch time).\"},{\"panel_id\":\"c\",\"text\":\"The image shows the surface morphology of the trench bottom Γi/Γn = 10^-5i in the passivation step after 25 pulses (87.5 s etch time).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Image | Γᵢ/Γₙ Ratio | Surface Width (nm) | Height Scale |\\n|-------|-------------|----------------------|--------------|\\n| (a) | 0.01 | 25 | Low → High (Black → Red → Yellow) |\\n| (b) | 10⁻³ | 25 | Low → High (Black → Red → Yellow) |\\n| (c) | 10⁻⁴ | 25 | Low → High (Black → Red → Yellow) |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface for Γᵢ/Γₙ =10^-4 has a scattering of small divots caused by individual ion strikes and larger divots where several ion strikes stochastically occurred in close proximity during the same passivation step. The surface for Γᵢ/Γₙ=10^-3 has a similar pattern of larger divots, but with significantly more uniform roughening as well. The surface for Γᵢ/Γ=0.01 has few large divots with the surface being dominated by random roughness; however, the divots\\nwhich persist are larger and deeper.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"There is a competition between a roughening process, produced by stochastic ion impacts during the passivation phase, and a smoothing process during the otherwise ideal ALE cycle\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The overall roughness increases as the ion to neutral flux ratio increases\"}]}]","bbox":[{"panel_id":"a","x":3,"y":8,"width":574,"height":385},{"panel_id":"b","x":0,"y":388,"width":579,"height":341},{"panel_id":"c","x":1,"y":723,"width":576,"height":388}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":578,"height":1114,"image_format":"jpeg","image_sha256":"c73ead0e71dd35a25264c29156f3c541e48d52a4a2aa74129e15ddc0434c2e35","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_8.jpg","caption":"FIG. 8. (Color online) Surface morphology of the trench bottom with $100\\mathrm{ppm}\\mathrm{Cl}_2$ in the ion bombardment step after 25 pulses (32 s etch time). The color bar indicates the profile height, with dark representing deeper etching and light representing higher features.","id":"train/atomic-layer-etching/simulation-usecase/3/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_8","subset":"3d-scatter-plot","split":"train","classification":[{"panel_id":"a","label":"3d scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Surface morphology of the trench bottom with 100 ppm Cl2 in the ion bombardment step after 32 s etch time. The color bar indicates the profile height,\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Parameter | Value |\\n|------------------|-----------|\\n| Cl₂ concentration | 100 ppm |\\n| Surface width | 27 nm |\\n| Height scale | Low → High (color gradient: black → red → yellow) |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface has the characteristic divots, but the surface is also slightly concave due to a higher etch rate in the center of the feature. This higher etch rate is due to a higher flux of Cl atoms incident onto the center of the feature. The concavity becomes more pronounced with longer etch times (more pulses).\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The surface morphology generated by having a Cl flux during the ion bombardment phase differs slightly from when having an ion flux during the passivation phase. The height of the etched surface at the bottom of the AR=2 trench after 25 ALE pulses (32 s) shown in the image for the 100 ppm Cl2 case\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"27 nm\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":571,"height":441}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_8.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"3d scatter plot","caption_source":"content.json:img_caption"},"width":575,"height":447,"image_format":"jpeg","image_sha256":"10b781237ceb0fb2535052d1efb7ff2f8575938c6450449feb4987e9724b7b3d","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |