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| {"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_fig_2.jpg","caption":"FIG. 2. (Color online) Number of publications per year on the subject of plasma-assisted ALD, between 1991 and 2011 (status May 31, 2011). The search was run in published abstracts using Web of Science (Ref. 23). The search terms included \"plasma-assisted ALD,\" \"plasma-enhanced ALD,\" \"radical enhanced ALD,\" \"remote plasma ALD,\" \"direct plasma ALD,\" and \"plasma ALD.\" The first report of a plasma-assisted ALD process by De Keijser and Van Opdorp (Philips Research Laboratories, Eindhoven), published in 1991, is also included.","id":"test/atomic-layer-deposition/experimental-usecase/10/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/10/fig_2","subset":"bar-chart","split":"test","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart presents the number of publications per year referencing plasma-assisted ALD and related terms. It shows minimal activity before 2000, followed by rapid growth after 2005, indicating a strong rise in research interest and adoption of plasma-based ALD methods.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Year | Publications per Year |\\n|------|-----------------------|\\n| 1990 | 1 |\\n| 1995 | 1 |\\n| 2000 | 1 |\\n| 2005 | 10 |\\n| 2010 | 55 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The number of publications remained low through the 1990s but began increasing sharply after 2000, reaching a significant rise after 2005, reflecting growing research and industrial interest in plasma-assisted ALD.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each bar represents the total number of publications per year that include plasma-assisted ALD and related keywords.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Plasma-assisted, Plasma-enhanced, Radical-enhanced, Remote plasma, Direct plasma ALD\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":684,"height":525}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":684,"height":525,"image_format":"jpeg","image_sha256":"cc44f53361d1a94a999978171e546bb4aa7c06c0565a85a5cc3e08c92cde45bf","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-deposition_experimental-usecase_39_fig_12.jpg","caption":"FIG. 12. (Color online) Bar graph mass spectrum during the $\\mathrm{O}_2$ plasma step as composed from the time-resolved quadrupole mass spectrometry (QMS) measurements carried out in the Oxford Instruments FlexAL reactor. The spectrum has been corrected for (background) signals during regular $\\mathrm{O}_2$ plasma operation and shows therefore only species that are related to the ALD surface reactions taking place during the $\\mathrm{O}_2$ plasma step. The most likely ions contributing to the signals at the selected mass-to-charge ratios $(m / z)$ are indicated.","id":"test/atomic-layer-deposition/experimental-usecase/39/fig_12","sample_id":"atomic-layer-deposition/experimental-usecase/39/fig_12","subset":"bar-chart","split":"test","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart displays the peak ion current (A) of various ions (CH<sub>x</sub><sup>+</sup>, CO<sup>+</sup>, C<sub>2</sub>H<sub>x</sub><sup>+</sup>, CO<sub>2</sub><sup>+</sup>) against mass (amu). The y-axis represents the peak ion current on a logarithmic scale, while the x-axis shows the mass in atomic mass units.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Mass (amu) | QMS: Peak ion current (A) |\\n|---|---|\\n| 12 | 2*10^-10 |\\n| 13 | 8*10^-11 |\\n| 14 | 1*10^-11 |\\n| 15 | 2*10^-10 |\\n| 24 | 2*10^-13 |\\n| 25 | 4*10^-13 |\\n| 26 | 2*10^-12 |\\n| 27 | 2*10^-12 |\\n| 28 | 3*10^-11 |\\n| 29 | 3*10^-12 |\\n| 30 | 3*10^-12 |\\n| 44 | 7*10^-12 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 12 - 15 amu.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"28 amu.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 24 - 30 amu.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"44 amu.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":673,"height":528}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/images/fig_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/39/Heil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"39","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":673,"height":528,"image_format":"jpeg","image_sha256":"95fdb71c7e563f9ee8a0c2e4e2623bd5e404b80a8c4116f2760d1339e73d3b58","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-etching_simulation-usecase_18_fig_2.jpg","caption":"FIG. 2. Distribution of coordination numbers for the bulk $\\mathsf{aHfO_2}$ model used in this study that was prepared using classical molecular dynamics.","id":"test/atomic-layer-etching/simulation-usecase/18/fig_2","sample_id":"atomic-layer-etching/simulation-usecase/18/fig_2","subset":"bar-chart","split":"test","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows a bar chart of the number of atoms at various coordination numbers for oxygen (O) and hafnium (Hf). Oxygen has a higher count at coordination numbers 3, while hafnium shows a peak at coordination number 7.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coordination Number | O | Hf |\\n|---|---|---|\\n| 2 | 3 | - |\\n| 3 | 98 | - |\\n| 4 | 42 | - |\\n| 5 | - | 2 |\\n| 6 | - | 32 |\\n| 7 | - | 34 |\\n| 8 | - | 4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3 or 4 for oxygen, and 7 for Hf.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The number of oxygen atoms increases for 2 to 3 as a coordination number. Then it decreases for 4.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"As can be seen, the oxygen atoms has a higher number of atoms at a lower coordination number.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Theoretical studies require knowledge of the coordination number. For this reason, it is important to determine the amount that dominates the bulk model.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":661,"height":443}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/images/fig_2.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/18/Origin of enhanced thermal atomic layer etching of amorphous HfO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"content.json:img_caption"},"width":669,"height":447,"image_format":"jpeg","image_sha256":"620c91904954add8d0c747ee04122658ae6170a60afbcd76565446d5d6ee77be","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/34/04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc","sample_id":"atomic-layer-etching/simulation-usecase/34/04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc","subset":"bar-chart","split":"test","classification":[{"panel_id":"a","label":"bar chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The bar chart shows the distribution of coverage fraction values relative to the mean. Most measurements fall between −σ and +σ, with the highest frequencies near the mean. Very few values occur at the extreme ±3σ bins, indicating a narrow spread around μ.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Coverage Fraction | Frequency |\\n|-------------------|-----------|\\n| -3σ | 1 |\\n| -2σ | 4 |\\n| -σ | 20 |\\n| μ | 19 |\\n| +σ | 16 |\\n| +2σ | 10 |\\n| +3σ | 0 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The distribution is strongly centered around the mean. The highest frequencies occur near μ and within ±σ, while the number of observations drops off as the coverage fraction moves toward ±2σ and ±3σ. This indicates that most values cluster close to the mean with relatively few outliers.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"μ = 0.9814.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The −σ bin, the mean (μ) bin, and the +σ bin.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":509,"height":436}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/04961dd67c8a719f41a4bdbc44ee1c49b3357525fdfa15b93e9df870f3b868cc.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"bar chart","caption_source":"not_found"},"width":509,"height":436,"image_format":"jpeg","image_sha256":"814910c13b589a6d68b429060e588444be116c5e66859e1936dea6b4909a50bc","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/34/2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9","sample_id":"atomic-layer-etching/simulation-usecase/34/2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9","subset":"bar-chart","split":"test","classification":[{"panel_id":"b","label":"bar chart"}],"summarization":"[{\"panel_id\":\"b\",\"text\":\"The bar chart shows the distribution of etching fraction values relative to the mean. Most measurements cluster around μ = 0.7777, with the highest frequency near the center. The number of observations decreases toward the ±3σ bins, indicating a relatively narrow spread with few extreme values.\"}]","data_extraction":"[{\"panel_id\":\"b\",\"text\":\"| Etching Fraction | Frequency |\\n|------------------|-----------|\\n|-3σ | 1 |\\n|-2σ | 4 |\\n|-σ | 20 |\\n|μ | 25 |\\n|+σ | 12 |\\n|+2σ | 5 |\\n|+3σ | 2 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The distribution is centered around the mean, with most values occurring within ±σ. Frequencies drop off as the etching fraction moves toward ±2σ and ±3σ, indicating that extreme values are relatively uncommon.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"μ = 0.7777.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"The μ bin, the −σ bin, and the +σ bin.\"}]}]","bbox":[{"panel_id":"b","x":0,"y":0,"width":503,"height":436}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/2d6ab73da07b7b6bbf9a4fc1ae8384de54332a287fa24f422745afeb7863d9c9.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"b","first_classification_label":"bar chart","caption_source":"not_found"},"width":503,"height":436,"image_format":"jpeg","image_sha256":"bea52bc8f608d6e1fd4f5134a702eb921207fb49f3ad1217d880ec9f3ecacbbb","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_11.jpg","caption":"Fig. 11. Histograms depicting the distribution of the coverage fraction (a), etching fraction (b), and etching per cycle (c) for a sample size of 50 multiscale CFD data points for 20 sccm HF flow rate, 40 sccm TMA flow rate, and $80~\\mathrm{mm / s}$ substrate velocity without the influence of disturbances. Each bar represents a standard deviation, $\\sigma$ from the mean, $\\mu$ of the data set.","id":"test/atomic-layer-etching/simulation-usecase/34/fig_11","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_11","subset":"bar-chart","split":"test","classification":[{"panel_id":"c","label":"bar chart"}],"summarization":"[{\"panel_id\":\"c\",\"text\":\"The bar chart shows the distribution of etching per cycle values. Most measurements cluster around the mean (μ = 0.3511 Å/cycle), with the highest frequencies near μ and −σ. Frequencies decrease toward the ±3σ bins, indicating relatively few extreme values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etching per Cycle (Å/cycle) | Frequency |\\n|-----------------------------|-----------|\\n| -3σ | 1 |\\n| -2σ | 4 |\\n| -σ | 23 |\\n| μ | 15 |\\n| +σ | 14 |\\n| +2σ | 5 |\\n| +3σ | 2 |\"}]","vqa":"[{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The distribution is centered around the mean, with most values occurring near μ and within ±σ. Frequencies decrease toward the outer bins. This shows that extreme etching rates are relatively uncommon.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"μ = 0.3511 Å/cycle.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"−σ bin, μ bin.\"}]}]","bbox":[{"panel_id":"c","x":0,"y":0,"width":512,"height":445}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_11.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_11.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"c","first_classification_label":"bar chart","caption_source":"content.json:image_caption"},"width":512,"height":445,"image_format":"jpeg","image_sha256":"60baea328e7fdfc8611054a5828426acc4bdacf4cd0722ce6fea8a444e8ee57e","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |