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| {"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_5.jpg","caption":"Figure 5. Mass change versus time for $\\mathrm{Al}_2\\mathrm{O}_3$ ALE using sequential TMA and HF exposures at 250, 275, 300, and $325^{\\circ}C$","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_5","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows mass loss from Al2O3 during repeated TMA/HF cycles at four temperatures. All traces decrease roughly linearly with time, but the slope becomes steeper at higher temperatures, indicating faster etching. The 250 °C curve shows the smallest mass loss while the 325 °C trace shows the largest, consistent with thermally enhanced reaction rates. The right-hand axis converts the mass loss to an equivalent thickness removed.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Time (s) | Mass change (ng/cm²) |\\n|------------------|----------|-----------------------|\\n| 250 | 0 | ~0 |\\n| 250 | 4000 | ~-500 |\\n| 250 | 8000 | ~-900 |\\n| 275 | 0 | ~0 |\\n| 275 | 4000 | ~-800 |\\n| 275 | 8000 | ~-1600 |\\n| 300 | 0 | ~0 |\\n| 300 | 4000 | ~-1100 |\\n| 300 | 8000 | ~-2200 |\\n| 325 | 0 | ~0 |\\n| 325 | 4000 | ~-1500 |\\n| 325 | 8000 | ~-3000 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.0 s of TMA exposure, 30.0 s of N2 purge, 1.0 s of HF exposure, and 30.0 s of N2 purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change per cycle increases with higher temperature values.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"325 °C\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The information shown in the figure makes it possible to determine that the temperature of the ALE cycle affects the rates of the process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The process with the highest etch rate is the one at 325 degree Celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This would take 6000 seconds.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Industrial players usually aim for the highest throughput. This would be achieved with the process at 325 degrees Celcius.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The process at 250 degrees Celcius.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At each temperature, the mass decreases approximately linearly with time. The lines do not show curvature or abrupt changes over the plotted interval. This indicates a steady accumulation of mass loss during the process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The 250 °C and 275 °C curves remain closest together.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Mass change on the left y-axis directly represents cumulative material removal.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The thickness axis provides an alternative way to interpret the same trend in length units. It allows readers to estimate film removal depth directly from the plot. This is useful for process planning without additional conversion.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Etch rate increases approximately 5-fold from 0.14 Å/cycle at 250°C to 0.75 Å/cycle at 325°C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The dual axes allow direct comparison of the raw QCM measurement (mass change in ng/cm²) with the more practically relevant thickness change (in Å). The thickness conversion uses the known Al₂O₃ density of 3.1 g/cm³, enabling readers to immediately understand the etch depth without manual calculation. This is particularly useful for process development where target etch depths are typically specified in thickness units.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Linear behavior confirms that the etch rate remains constant throughout 100 cycles at each temperature, indicating stable, reproducible etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 75 Å (based on 0.75 Å/cycle × 100 cycles), as shown on the right y-axis.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"TMA dose (2 s) → 2. Purge (30 s) → 3. HF dose (1 s) → 4. Purge (30 s).\\nThe notation defines the precise timing: reactant dose length and purge length. This controls reactant exposure and byproduct removal, ensuring self-limiting surface reactions and preventing gas-phase mixing.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"325°C is ruled out. Using 300°C (the highest allowed) maximizes the etch rate within the constraint, reducing process time. The trade-off is operating near the budget limit, which may increase thermal stress compared to 250°C, but offers significantly faster throughput.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing temperature increases the slope (etch rate). This follows the Arrhenius law, where higher thermal energy accelerates the surface reaction kinetics of both the fluorination (HF) and ligand-exchange (TMA) steps, leading to more material removed per unit time.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If CVD-like growth occurred (e.g., TMA and HF mixing in the gas phase), the net mass change would likely turn positive (mass gain) or the etch rate would slow down drastically, causing the curves to flatten or curve upward. The fact that the lines remain strictly negative and linear confirms that the process is operating in a pure etching mode with no competing deposition artifacts.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"These MCPCs correspond to etch rates hence a mass loss is a direct indicator of thickness decreasing and vice versa.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Etch rates are\\n1. 0.14 Å/cycle at 250 °C \\n2. 0.75 Å/cycle at 325 °C\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The determination of these etch rates is based on the Al2O3 ALD film density of 3.1 g/cm3, the MCPC, the number of ALE cycles.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The MCPC increases with temperature from -4.2 ng/(cm^2 cycle) at 250 °C to -23.3 ng/(cm2 cycle) at 325 °C. This corresponds to etch rates of 0.14 Å/cycle at 250 °C to 0.75 Å/cycle at 325 °C.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For this study, a quartz crystal microbalance (QCM) was used, which yields mass change in ng/cm^2. Before the experiments, the density of the Al2O3 substrate was determined to be 3.1 g/cm^3. Dividing mass change (per area) by the density in this case results in the material thickness that was etched per cycle, expressed in Å.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2 s TMA exposure, 30 s purge, 1 s HF exposure, 30 s purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Temperature\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"325 °C, 300 °C, 275 °C, 250 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Since one cycle is about 63 s, 100 cycles correspond to roughly 6300 s, so you can read the expected thickness removal near that time on the right-hand axis. At 325 °C, the curve reaches roughly 70 Å (≥6 nm). All lower-temperature curves show less than 6 nm after 100 cycles. Therefore, 325 °C is the best choice because it meets the ≥6 nm target within 100 cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Higher temperatures produce steeper mass-loss slopes. The 250 °C curve decreases slowly, while the 300 °C and 325 °C curves show progressively faster loss. This indicates that the etching reaction accelerates significantly with temperature.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA / purge / HF / purge (“2–30–1–30”).\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"250 °C, 275 °C, 300 °C, and 325 °C.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"MCPC increases from −4.2 ng/(cm² cycle) at 250 °C to −23.3 ng/(cm² cycle) at 325 °C.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Consistent removal of Al₂O₃ per cycle, Predictable thickness reduction, Minimal fluctuations between cycles\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Temperature control is crucial because it directly determines the etch rate. By selecting appropriate temperatures, practitioners can achieve precise and uniform removal of Al₂O₃, tailor etch depths, and ensure consistent results across multiple samples or production batches. Proper temperature management is therefore essential for reproducible, high-quality ALE in both research and industrial applications.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":486}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":667,"height":486,"image_format":"jpeg","image_sha256":"9722bbee3fbccb297a7aa63c36e9af6538233ba23be1ad874fca144304ed8921","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_2.jpg","caption":"Figure 2. Relative atomic percentages among In, Ga, and As in InGaAs, and the atomic percentage of Cl on the InGaAs surface measured by XPS as a function of Cl adsorption time from 2.5 to $20\\mathrm{s}$ . The power to the ICP ion source was $200\\mathrm{W}$ at $\\mathrm{Cl}_2$ $1.0~\\mathrm{mTorr}$ of process chamber pressure. The grid voltages to the ICP ion gun were maintained at $-10\\mathrm{V}$ for the first grid and $-20\\mathrm{V}$ for the second grid.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_2","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_2","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the changes in In:Ga:As atomic percentage and Cl atomic percentage on the surface over time during Cl adsorption.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cl Adsorption Time (sec) | In Atomic Percentage (%) | Ga Atomic Percentage (%) |As Atomic Percentage (%) |Cl Atomic Percentage (%) |\\n|---|---|---|---|---|\\n| Pristine | 45 |36|15| 0 |\\n| 2.5 | 48 | 39|14|7 |\\n| 5 | 49 |35|15|12 |\\n| 10 | 49 |35|15|16 |\\n| 20 | 46 | 35|16 |16|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Eventhough there is a slight increase in indium content for short times, the overal ratio remains constant, so it does not affect the ratios.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"3.2:2.4:1\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The chlorine is only added to the surface. If the full surface is covered in chlorine, there cannot be any additional chlorine added.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"15 seconds\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":653,"height":458}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":658,"height":461,"image_format":"jpeg","image_sha256":"469cc7db3f29fb94c823b9b47ee159e5144071ec780e5b3658bd95f74b229200","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_4.jpg","caption":"Figure 4. Sputter etch depth of InGaAs itself during the $\\mathrm{Ar^{+}}$ ion gun operation as a function of (a) different first grid voltages for the $\\mathrm{Ar^{+}}$ ion exposure time of 50 s/cycle and (b) $\\mathrm{Ar^{+}}$ ion exposure time for the first grid voltages of $+10$ and $+30\\mathrm{V}$ . The sputtering was cyclic processed for 100 cycles without adsorption of chlorine during the chlorine adsorption step. The power of the ICP ion gun for the $\\mathrm{Ar^{+}}$ ion was maintained at $200\\mathrm{W}$ at the process chamber pressure of $3.0\\mathrm{mTorr}$ Ar. The second grid voltage to the ICP ion gun was maintained at $-100\\mathrm{V}$ for a directional ion beam while the third grid voltage was grounded.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_4","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch depth and etch rate of various materials (InGaAs, Si, SiO<sub>2</sub>, HfO<sub>2</sub>, PR, ACL) as a function of Ar<sup>+</sup> ion exposure time. The etch depth increases with exposure time for InGaAs, while the etch rate saturates at around 50 seconds.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Ar<sup>+</sup> Ion Exposure Time (sec/cycle) | Etch Depth (Å) InGaAs|Etch Depth (Å) Other| Etch Rate (Å/Cycle) InGaAs|Etch Rate (Å/Cycle) Other|\\n|---|---|---|---|---|\\n| 0 | 0 | 0 |0|0|\\n| 20 | 40 | 0 |0.4|0|\\n| 30 | 60 | 0|0.6 |0|\\n| 50 | 100 | 0|1.0 |0|\\n| 80 | 100 |0| 1.0 |0|\\n| 100 | 100 | 0|1.0 |0|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Only the InGaAs is etched upon the plasma exposure, so the process is selective for InGaAs.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The argon ions only remove the modified layer, which is 1.1 angstrom thick.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Instead of using a modification with chlorine, use something else, such as fluorine.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"100 cycles.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":3,"width":649,"height":445}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":653,"height":444,"image_format":"jpeg","image_sha256":"965e6fddb0022eb82ebbe0a3b65d0f8de71e8855f0066e243349c4384beacdf8","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_6.jpg","caption":"Figure 6. Etch depth $(\\mathring{\\mathrm{A}})$ and etch rate (A/cycle) of InGaAs measured as a function of the number of ALE cycles.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_6","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart shows the etch depth and etch rate as a function of the number of ALE cycles. The etch depth increases with the number of cycles, whereas the etch rate remains constant.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| No. of ALE Cycles | Etch Depth (Å) | Etch Rate (Å/Cycle) |\\n|---|---|---|\\n| 100 | 100 ± 5 | 1.1 ± 0.1 |\\n| 200 | 210 ± 5 | 1.1 ± 0.1 |\\n| 300 | 325 ± 5 | 1.1 ± 0.1 |\\n| 400 | 450 ± 5 | 1.1 ± 0.1 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The etch rate is normalized per cycle, for ALE, this is not dependent on the number of cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The value is 1.1 angstrom/cycle. This can also be determined by determining the slope of the etch depth.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is a region. This is most likely to occur in the initial cycles. This also holds for ALD, where it is called nucleation delay.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"44 nm.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":1,"width":666,"height":447}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":669,"height":450,"image_format":"jpeg","image_sha256":"b0d1b89df148cef029667379e1942de01f583ff63652cfb3e76e082cc00f5c6c","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_7.jpg","caption":"Figure 7. Surface roughness and surface composition after the 100 cycles of ALE, investigated using AFM and XPS, respectively. As references, the surface roughness and surface composition of as-received un-etched InGaAs and the InGaAs etched by conventional RIE were included. For the InGaAs RIE, InGaAs was etched for 1 min using an ICP etcher operated at $13.56\\mathrm{MHz}200\\mathrm{W}$ $-50\\mathrm{V}$ of bias voltage, and $\\mathrm{Cl}_2$ gas pressure of $50\\mathrm{mTorr}$","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_7","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_7","subset":"multi-axis-chart","split":"validation","classification":[{"panel_id":"a","label":"multi-axis chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The grouped bar chart displays atomic percentages of various elements (In, Ga, As, Cl, C) across three conditions (Ref., ALE, RIE) along with RMS roughness measurements.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Atomic Percentage (%) | Ref. | ALE | RIE |\\n|---|---|---|---|\\n| In | 20.6% | 29.5% | 38.0% |\\n| Ga | 43.4% | 21.8% | 18.4% |\\n| As | 6.6% | 5.3% | 2.4% |\\n| Cl | 0.0% | 0.0% | 7.8% |\\n| RMS Roughness (nm) | 4.5 | 4.8 | 5.4 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Both for the ALE and the Ref. the percentages are roughly equal. This shows that there is no selectivity towards specific species in the film.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes there is an influence, where Ga and As seem to be sputtered selectively.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ALE shows a lower RMS roughness than RIE so ALE is more gentle and the ion impact from RIE has bigger impact on the\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The roughness is not extremely low, but there has been some added processing with C incorporation so it is unclear, based on this figure whether this deposition leads to low roughness.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":664,"height":423}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"multi-axis chart","caption_source":"content.json:img_caption"},"width":669,"height":425,"image_format":"jpeg","image_sha256":"fd8be89b63a523530024c7306f006c2326d06df9f46dea04d6bd4c136211d814","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |