subsets/process-flow-diagram/test/metadata.jsonl

{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_10_78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f.jpg","caption":"Fi.18.    t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t h t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t","id":"test/atomic-layer-deposition/experimental-usecase/10/78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f","sample_id":"atomic-layer-deposition/experimental-usecase/10/78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":141,"height":725}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/images/78e75c8159892cae9b359d695a0328a844cd2316a6ad19e6aacba07a15b57e5f.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/10/H. B. Profijt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1416,"height":725,"image_format":"jpeg","image_sha256":"9f6b841b874521fce7fc1acc91c1ca178f22f600aab844de970eed7c4c8012a3","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_1_figure_3.jpg","caption":"Figure 3. Comparison of the  $0\\mathrm{K}$  heats of adsorption  $(Q_{\\mathrm{ads}}(\\mathrm{TiCl}_4))$  calculated using different model chemistries.","id":"test/atomic-layer-deposition/simulation-usecase/1/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/1/figure_3","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Figure 3 compares the 0 K heats of adsorption (Qₐdₛ) of TiCl₄ calculated using different model chemistries, including single-level methods (B3LYP, MP2) and ONIOM hybrid approaches (ONIOM-B3LYP, ONIOM-MP2, ONIOM-CCSD(T)). The figure shows that ONIOM(B3LYP) significantly underestimates the adsorption energy, whereas ONIOM(MP2) closely matches the reference ONIOM(CCSD(T)) results. Similarly, the single-level MP2 method is in better agreement with ONIOM(CCSD(T)) than B3LYP. The comparison highlights both the relative accuracy of computational methods and the rationale for selecting MP2 to calculate heats of adsorption in the study.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"|Model Chemistry|Q_ads(TiCl4) (kcal/mol)|Notes|\\n|---------------|-----------------------|-----|\\n|ONIOM(B3LYP)|1.9|Underestimates adsorption energy; electronic stabilization energy lower than ZPE increase|\\n|ONIOM(MP2)|7.2|In good agreement with ONIOM(CCSD(T)); reliable for adsorption predictions|\\n|ONIOM(CCSD(T))|7.5|Considered most accurate; used as reference for validation|\\n|Single-level B3LYP|8.9|ΔQ_SM = 7.0 kcal/mol relative to MP2; shows trend consistency with ONIOM|\\n|Single-level MP2|1.9|Consistent with ONIOM(MP2); selected for heats of adsorption calculations|\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ONIOM-MP2 and single-level MP2 closely match ONIOM(CCSD(T)) results for Qₐdₛ(TiCl₄).\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The comparison shows that some methods, like ONIOM(B3LYP), significantly underestimate adsorption energies, while MP2-based approaches (ONIOM-MP2 or single-level MP2) provide results much closer to the high-accuracy ONIOM(CCSD(T)) reference. This informs the selection of MP2 for calculating heats of adsorption in the study, balancing computational efficiency with reliability. By validating trends across multiple methods, the study ensures that the chosen computational approach accurately predicts adsorption energetics, which is crucial for modeling TiCl₄ reactions on the SiO₂ surface.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"ONIOM(B3LYP) underestimates Qₐdₛ(TiCl₄) significantly, ONIOM(MP2) closely aligns with ONIOM(CCSD(T)) results, Single-level MP2 shows better agreement with CCSD(T) than single-level B3LYP, Differences in adsorption energies illustrate the impact of model chemistry choice on computational accuracy\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1028,"height":350}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/images/figure_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/1/Zheng Hu et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1028,"height":350,"image_format":"jpeg","image_sha256":"cb5d39aeb0f57ad8b9f30124533bfadba0b87b2fc7ff39a8c712e0eeaa753bd0","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_4.jpg","caption":"Fig. 4. Schematic representation of the pathways (gas phase and surface) for GaN deposition.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_4","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_4","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":6,"y":2,"width":863,"height":774}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":880,"height":778,"image_format":"jpeg","image_sha256":"1cdd83fb9bbc3ba73405051f609d5ce286b829d4ea8cda76dcd609d8da8dab9a","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_12_figure_1.jpg","caption":"Figure 1. (a) Schematic representation of an ideal ALE cycle. (b) Schematic representation of a proposed  $\\mathrm{Al}_2\\mathrm{O}_3$  ALE cycle.","id":"test/atomic-layer-etching/simulation-usecase/12/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/12/figure_1","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Schematic of an idealized four-step atomic layer etching cycle illustrating surface modification, purge, selective removal, and purge. The diagram emphasizes cyclic, self-limiting reactions that enable layer-by-layer material removal.\"},{\"panel_id\":\"b\",\"text\":\"Proposed thermal ALE cycle for Al₂O₃ in which HF exposure converts the surface to an AlF₃ layer, followed by Sn(acac)₂ exposure that removes the fluorinated layer through ligand-exchange chemistry. Volatile metal–organic byproducts form, restoring the Al₂O₃ surface and completing a plasma-free ALE cycle.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Purges prevent gas-phase reactions and ensure each half-reaction proceeds in a self-limiting manner.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Each step is surface-saturating and self-limiting.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Previous methods used HF + H₂O for both fluorination and ligand-promoted removal; this work uniquely splits the roles: HF for fluorination only, and Sn(acac)₃ as a dedicated, non-corrosive, organometallic removal agent.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":3,"width":561,"height":379},{"panel_id":"b","x":18,"y":420,"width":539,"height":368}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/12/Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"12","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":564,"height":789,"image_format":"jpeg","image_sha256":"ffba27f47bba22364863bdd3409beb6ed265898af8ad33da23028c6b20abdc3b","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_25_figure_1.jpg","caption":"Figure 1. Schematic model of the thermal ALE process.","id":"test/atomic-layer-etching/simulation-usecase/25/figure_1","sample_id":"atomic-layer-etching/simulation-usecase/25/figure_1","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"One thermal ALE cycle is shown as a two-precursor sequence separated by purge steps. After dosing the 1st precursor, purging leaves a surface “modified layer.” The 2nd precursor is then introduced and, after the final purge, the schematic indicates formation of an “etched region,” implying net material removal. The arrow returning to the start suggests the cycle repeats.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The first purge leaves a “modified layer” on the substrate surface.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No. The final panel marks an “etched region,” implying a net change to the substrate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The cycle starts by adding the 1st precursor to the substrate, followed by a purge that leaves a modified surface layer. Next, the 2nd precursor is introduced to react with that modified layer. A final purge removes reaction products and corresponds to the appearance of an etched region in the schematic. The loop arrow indicates the sequence repeats as a cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"1. Add 1st precursor\\n2. Purge\\n3. Add 2nd precursor\\n4. Purge\"}]}]","bbox":[{"panel_id":"a","x":10,"y":13,"width":995,"height":284}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/images/figure_1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/25/Self-Limiting Temperature Window for Thermal Atomic Layer Etching.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"25","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1011,"height":302,"image_format":"jpeg","image_sha256":"45c8c96f7efc6502fc5a14c8937d7d96b37c133dc9a18c50dab5ec2ddf1c31f0","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254.jpg","caption":"(a)","id":"test/atomic-layer-etching/simulation-usecase/34/beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254","sample_id":"atomic-layer-etching/simulation-usecase/34/beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":677,"height":292}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/beda8ab9ce95434954a012013d7485948ee341f590c89ef8b815d35b72f89254.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":677,"height":292,"image_format":"jpeg","image_sha256":"be9e57f09aa2e961858d9a44b1e7db45999e3d5058fe7e2f5fd29b1bc2e647a4","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_4.jpg","caption":"Fig. 4. A 2D lateral view of the dynamic mesh for the spatial reactor design with  $0.25\\mathrm{mm}$  gap distance.","id":"test/atomic-layer-etching/simulation-usecase/34/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_4","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1214,"height":303}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_4.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":1214,"height":303,"image_format":"jpeg","image_sha256":"a6bc1de10f0562b76b81bff5b3ed7ab2a694a9305610d547bd32fd97721982e2","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_6.jpg","caption":"(b) Fig. 6. Schematic R2R control diagrams of an (a) EWMA-based controller and an (b) ANN-based controller. The \"process\" is the multiscale CFD model,  $\\mathbf{x}$  denotes the input vector,  $y$  represents the output variable,  $\\tau$  is the setpoint or target value,  $c$  is the bias for the previous batch run,  $n - 1$ , and the current batch run,  $n$ , and  $\\Delta y$  is the deviation of the output computed from the multiscale CFD simulation from the setpoint,  $\\tau$ .","id":"test/atomic-layer-etching/simulation-usecase/34/fig_6","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_6","subset":"process-flow-diagram","split":"test","classification":[{"panel_id":"a","label":"process flow diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":675,"height":275}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:image_caption"},"width":675,"height":275,"image_format":"jpeg","image_sha256":"e700c757c5a48e999e7fb4c3a8354238046306f74c0c3f7c0eae9fb5e2352186","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}