subsets/process-flow-diagram/validation/metadata.jsonl

{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_19_fig_1.jpg","caption":"Fig. 1. Schematic illustrations of one typical cycle of (a) thermal ALE and (b) ALD.","id":"validation/atomic-layer-etching/experimental-usecase/19/fig_1","sample_id":"atomic-layer-etching/experimental-usecase/19/fig_1","subset":"process-flow-diagram","split":"validation","classification":[{"panel_id":"a","label":"process flow diagram"},{"panel_id":"b","label":"process flow diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This subfigure illustrates one complete thermal ALE cycle divided into four steps across two half reactions. Half reaction A includes (I) self limiting precursor adsorption forming a surface layer and (II) purge. Half reaction B includes (III) self limiting removal where co reactant converts the surface layer to volatile products and (IV) purge. The net result is atomic layer removal.\"},{\"panel_id\":\"b\",\"text\":\"This subfigure illustrates one complete ALD cycle with the same four step structure. Half reaction A includes (I) self limiting precursor adsorption and (II) purge. Half reaction B includes (III) self limiting co reactant adsorption and (IV) purge. The net result is atomic layer addition, showing ALD as the inverse process of thermal ALE.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The cyan spheres represent precursor molecules, while the red patterned spheres represent co reactant molecules.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Both use the same four step cyclic structure with self limiting half reactions, but ALE achieves controlled atomic layer removal while ALD achieves controlled atomic layer addition.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"In thermal ALE, step III is a self limiting removal step that converts surface species to volatile products; in ALD, step III is a self limiting adsorption step that adds material to the surface.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Purge steps remove excess unreacted precursor and volatile byproducts from the reaction chamber using inert gas. This prevents unwanted gas phase reactions between precursor and co reactant, maintains the self limiting nature of each half reaction, and ensures precise control over the amount of material removed or deposited per cycle.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":5,"width":1207,"height":392},{"panel_id":"b","x":3,"y":381,"width":1203,"height":360}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/19/Thermal atomic layer etching Mechanism, materials and prospects.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"19","first_classification_panel_id":"a","first_classification_label":"process flow diagram","caption_source":"content.json:img_caption"},"width":1214,"height":744,"image_format":"jpeg","image_sha256":"f584e34aaa692c8df3ba24bde10d68be010353711cceb680da68cae7a21f0d44","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}