subsets/table/train/metadata.jsonl

{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_35_a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8.jpg","caption":"Table 1. Process Parameters and Characteristics of Tellurides and Selenides Prepared by ALD Using  $(\\mathsf{Et}_3\\mathsf{Si})_2\\mathsf{Te}$  and  $(\\mathsf{Et}_3\\mathsf{Si})_2\\mathsf{Se}$  as Precursorsa","id":"train/atomic-layer-deposition/experimental-usecase/35/a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8","sample_id":"atomic-layer-deposition/experimental-usecase/35/a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8","subset":"table","split":"train","classification":[{"panel_id":"a","label":"table"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The table provides detailed information about various materials including their metal precursors, evaporation temperatures, growth temperatures, growth rates measured by EDX, and compositions analyzed by EDX.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| material | metal precursor/evaporation temperature | growth temperature (°C) | growth rate by EDX (Å/cycle) | composition by EDX |\\n|---|---|---|---|---|\\n| ZnTe | ZnCl₂/360 °C | 400 | 0.61 ± 0.05 | Zn 47%, Te 53% |\\n| Bi₂Te₃ | BiCl₃/140 °C | 165 | 1.21 ± 0.08 | Bi 40%, Te 60% |\\n| ZnSe | ZnCl₂/360 °C | 400 | 0.55 ± 0.04 | Zn 48%, Se 50%, Te 2%<sup>b</sup> |\\n| Bi₂Se₃ | BiCl₃/140 °C | 165 | 0.97 ± 0.07 | Bi 41%, Se 59% |\\n| In₂Se₃ | InCl₃/285 °C | 295 | 0.55 ± 0.04 | In 41%, Se 59% |\\n| CuSe | Cu(II) pivalate/155 °C | 165 | 0.63 ± 0.06 | Cu 50%, Se 50% |\\n| Cu₂ₓSe | Cu(II) pivalate/165 °C | 200 | 0.48 ± 0.05 | Cu 61%, Se 39% |\\n| Cu₂Se | Cu(II) pivalate/165 °C | 300 | 0.16 ± 0.03 | Cu 69%, Se 31% |\\n| Cu₂Se | CuCl/350 °C | 400 | | |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Besides EDX, ellipsometry, XRR, and TEM can be used.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Bi2Te3, CuSe\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Cu(II) pivalate.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.61 angstrom per cycle\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1405,"height":296}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/images/a27ced502d67bd684cbf2f68460176ad15a149ac50a9328ff21b033b7c484cd8.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/35/Viljami Pore et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"35","first_classification_panel_id":"a","first_classification_label":"table","caption_source":"content.json:table_caption"},"width":1406,"height":298,"image_format":"jpeg","image_sha256":"7e6e6702fd48f844ed30920236b12a4b4e2410b2277b6a79ff58d24539c699ec","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_54_1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5.jpg","caption":"Table 1. Overview of Theoretical Studies of  $\\mathbf{SiO}_2$  ALD","id":"train/atomic-layer-deposition/simulation-usecase/54/1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5","sample_id":"atomic-layer-deposition/simulation-usecase/54/1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5","subset":"table","split":"train","classification":[{"panel_id":"a","label":"table"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":0,"width":669,"height":688}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/images/1327273b261e55f58d47b4629c426348d3c32f7362d46dee84c1d586d14f3ab5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/54/Guoyong Fang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"54","first_classification_panel_id":"a","first_classification_label":"table","caption_source":"content.json:table_caption"},"width":673,"height":692,"image_format":"jpeg","image_sha256":"2838bdc851f87a39b59decf83dbe525cd328a457a5ff5b735d5f93d1a3735463","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}