subsets/timeline-chart/validation/metadata.jsonl

{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_8.jpg","caption":"FIG. 8. Timeline of highlighted ALE reports between 1988 and 2014.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_8","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_8","subset":"timeline-chart","split":"validation","classification":[{"panel_id":"a","label":"timeline chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1275,"height":483}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"timeline chart","caption_source":"content.json:img_caption"},"width":1275,"height":483,"image_format":"jpeg","image_sha256":"dec6706d4d8fc27264986e2c176ea67d0b94566d361fed1ef3ac7b96a60c0e5a","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_8.jpg","caption":"FIG. 8. Timeline of highlighted ALE reports between 1988 and 2014.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_8","subset":"timeline-chart","split":"validation","classification":[{"panel_id":"a","label":"timeline chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The timeline chart illustrates the chronological progression of various research milestones and computational modelling advancements in materials science and technology from 1988 to 2014. Each milestone and advancement is referenced.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Year | Event | Reference |\\n|------|-------|-----------|\\n| 1988 | Diamond | [31] |\\n| 1989 | Directional III-V (GaAs) | [32] |\\n| 1990 | Directional Si with F | [33] |\\n| 1991 | Electrochemical (e.g., CdTe) | [105] |\\n| 1993 | Directional Si with Cl2, Isotropic III-Vs | [39], [34] |\\n| 1994 | Isotropic SiO2 with salts | [109] |\\n| 1997 | Computational modeling | - |\\n| 1998 | Comoutational modeling | - |\\n| 2001 | Neutral Beams | [83] |\\n| 2007 | Concept of directional SiO2 with deposition | [102] |\\n| 2008 | Directional high-k dielectrics | [51] |\\n| 2011 | Graphene using Zn deposition | [123] |\\n| 2013 | Si plasma assisted, SiO2 with deposition | [6], [90] |\\n| 2014 | First ALE workshop | - |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Between 1997 and 1999.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"During the 1990's most ALE reports focused on the directional etching process. In the 2000's, etching processes included the use of plasma as a reactant.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2008.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The focus was primarily on the directional etching process, although a few isotropic processes were reported in 1993 and 1994.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":1266,"height":480}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_8.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"timeline chart","caption_source":"content.json:img_caption"},"width":1275,"height":483,"image_format":"jpeg","image_sha256":"dec6706d4d8fc27264986e2c176ea67d0b94566d361fed1ef3ac7b96a60c0e5a","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}