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| {"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_10.jpg","caption":"Fig. 10. Reactor geometry [3] used for numerical calculation of growth rate at the diffusion-limited regime.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_10","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_10","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":2,"width":421,"height":541}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":431,"height":545,"image_format":"jpeg","image_sha256":"b4566cd5d6449ba08522ca637774a14ca4f75e30de1c913c61a78bf75e452f47","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_12.jpg","caption":"Fig. 12. Reactor geometry and boundary conditions [29] used for calculation growth rate as a function of V/III ratio.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_12","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_12","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":6,"width":590,"height":254}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_12.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":595,"height":261,"image_format":"jpeg","image_sha256":"29a63881c7f7b2272a1d65e01768d4a32c4aaab3e758af4d36553ab8fd048659","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_15.jpg","caption":"Fig. 15. Schematic drawing of the reactor geometry used to simulate Thomas Swan Ltd. reactor [30].","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_15","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_15","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":2,"width":524,"height":599}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_15.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_15.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":528,"height":603,"image_format":"jpeg","image_sha256":"cc3690cfceeca62f7f06e6ca91a4c34f21569352915fb1721e6f95fdbe37de8e","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_5.jpg","caption":"Fig. 5. Reactor geometry and boundary conditions [28] used for calculation of growth rate at different temperatures using CFD-ACE+™.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_5","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_5","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":3,"width":589,"height":225}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":594,"height":227,"image_format":"jpeg","image_sha256":"96aed57db68302cb37797014001edead282f569dc469232b54e070a60b7c34cf","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-deposition_simulation-usecase_18_fig_7.jpg","caption":"Fig. 7. Reactor geometry and boundary conditions [5] used for growth calculations.","id":"test/atomic-layer-deposition/simulation-usecase/18/fig_7","sample_id":"atomic-layer-deposition/simulation-usecase/18/fig_7","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":8,"y":7,"width":360,"height":447}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/18/Debasis Sengupta et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"18","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":373,"height":467,"image_format":"jpeg","image_sha256":"52ab1962a33363a644271af45ffec5859f97bbee37f6a1fbebd38eadbf2d4102","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-deposition_simulation-usecase_33_9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc.jpg","caption":"","id":"test/atomic-layer-deposition/simulation-usecase/33/9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc","sample_id":"atomic-layer-deposition/simulation-usecase/33/9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":7,"width":643,"height":367}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/images/9ea421572681260b6763db0029a2b2c35c7952a0f2020dffa5d1beb015936afc.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/simulation-usecase/33/René H. J. Vervuurt et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"33","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"not_found"},"width":650,"height":375,"image_format":"jpeg","image_sha256":"68812c6b69d2a8eb383bbf6729a4736545cca69dc2c30e61d62058872819b8fb","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-etching_experimental-usecase_1_figure_5.jpg","caption":"Figure 5. (a) A representation of a multi-color selectivity patterning scheme, (b) goal is to successfully remove the one \"color\" material with high selectivity to the other colors and no corner rounding.","id":"test/atomic-layer-etching/experimental-usecase/1/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/1/figure_5","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":324,"height":196},{"panel_id":"b","x":355,"y":11,"width":320,"height":222}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/images/figure_5.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/1/Atomic Layer Etching An Industry Perspective.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"1","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":675,"height":233,"image_format":"jpeg","image_sha256":"a61c7011fe159cd397b0e868311c524ce1cbc73e49971044a9f842de9a019a00","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-etching_experimental-usecase_21_fig_13.jpg","caption":"Fig. 13. AFM images of: (a) initial CoO thin films and (b) initial CoO film after 300 ALE cycles of sequential Hacac and $\\mathrm{O_3}$ exposures at $250^{\\circ}\\mathrm{C}$ .","id":"test/atomic-layer-etching/experimental-usecase/21/fig_13","sample_id":"atomic-layer-etching/experimental-usecase/21/fig_13","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":1,"width":525,"height":669},{"panel_id":"b","x":1,"y":660,"width":525,"height":689}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/images/fig_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/21/Thermal atomic layer etching of CoO using acetylacetone and ozone.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"21","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":528,"height":1353,"image_format":"jpeg","image_sha256":"771f10fac759a380cd786f7e84ac6145e8d26166d76e2632a93f205ff8fe419a","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |
| {"file_name":"images/test_atomic-layer-etching_experimental-usecase_41_fig_6.jpg","caption":"FIG. 6. (a) Surface morphology and (b) average roughness were investigated by atomic force microscopy of reference material, and a TiN film after 10, 30, and 50 cycles of the ALE process. The oxidation step was performed using $\\mathrm{O_2}$ at 5 SCCM, 0.05 Torr, $100^{\\circ}\\mathrm{C}$ , and $15W$ , and the fluorination step was performed using $\\mathrm{CF_4}$ at 2 SCCM, 0.03 Torr, $100^{\\circ}\\mathrm{C}$ , and $15W$ . At the removal step, the temperature was increased to $150^{\\circ}\\mathrm{C}$ with an Ar of 50 SCCM for $30s$ without RF power.","id":"test/atomic-layer-etching/experimental-usecase/41/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/41/fig_6","subset":"unknown","split":"test","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":19,"y":44,"width":641,"height":444},{"panel_id":"b","x":69,"y":561,"width":596,"height":511}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/41/Plasma atomic layer etching for titanium nitride.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"41","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":669,"height":1078,"image_format":"jpeg","image_sha256":"fbaf7ce6fdf08f2d8014006265c5b723c6b785098e49a143cd4feb2655d3bde5","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"} | |