subsets/unknown/train/metadata.jsonl

{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_42_38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd.jpg","caption":"","id":"train/atomic-layer-deposition/experimental-usecase/42/38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd","sample_id":"atomic-layer-deposition/experimental-usecase/42/38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":4,"width":513,"height":370}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/images/38547ce11117d4bfe67b96dae7afd2d6cff0ec861b80b873016629dd9663eadd.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/42/Coyle et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"42","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"not_found"},"width":516,"height":375,"image_format":"jpeg","image_sha256":"85dbb0afd07301da0ab3abcea01d8e92859a1b605a2543fd132b621391f1e286","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_1.jpg","caption":"FIG. 1. (a) Simulation domain for a horizontal cross-flow reactor. The 2D domain has cylindrical symmetry and incorporates an expanding section bridging the inlet manifold with the reactor tube. A picture of our experimental setup is shown for comparison. (b) Simulation domain for a  $300\\mathrm{mm}$  wafer reactor. The simulation domain comprises a circular disk with a  $50\\mathrm{cm}$  diameter and  $3\\mathrm{cm}$  diameter inlet and outlet regions. The height of the reactor is  $2\\mathrm{cm}$ . A  $300\\mathrm{mm}$  wafer region is placed at the center of the reactor and treated as a separate area. Only half of the reactor is modeled, with mirror boundary conditions used at the bisecting plane.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_1","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":0,"y":571,"width":670,"height":267},{"panel_id":"a","x":5,"y":0,"width":666,"height":563}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":672,"height":844,"image_format":"jpeg","image_sha256":"a5c64eaa5e46eb411d08ed5d4abf3d5ebfd5e73ce8454e810980a8f42ecb7819","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_11_fig_16.jpg","caption":"FIG. 16. Comparison between simulations and experimental results on a nontraditional experimental setup in which subsaturating pulses of TMA and  $\\mathsf{H}_2\\mathbb{O}$  are introduced locally using a pair of injectors. (a) Experimental setup, showing a wafer coated at a speed of 1 cycle per second. (b) Comparison between experiments and simulated growth rates for a speed of 4.17 cycles per second. At this rate, purge times are so short that there is an overimposed nonself-limited component. This is captured in the simulation results, which show the total material deposited over three ALD cycles.","id":"train/atomic-layer-deposition/simulation-usecase/11/fig_16","sample_id":"atomic-layer-deposition/simulation-usecase/11/fig_16","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"contour heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":667,"height":397},{"panel_id":"b","x":0,"y":431,"width":339,"height":418},{"panel_id":"c","x":341,"y":422,"width":336,"height":427}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_16.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/images/fig_16.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/11/Angel Yanguas-Gil et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":667,"height":850,"image_format":"jpeg","image_sha256":"d8ec9e3361c19fe9ffeb00bed21161c87c15221693eb3580995c801d47dc1a13","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_4.jpg","caption":"Figure 4. (a) Side view of the initial MD simulation cell without TMA molecules, where ODPA SAMs are aligned through VDW interactions, with coverage of  $2 \\times 2$  grid/molecule. MD snapshots to compare TMA movement at different TMA pressures: (b) 1.3 Torr (low pressure), captured from supporting movies 1-4 and (c) 8.9 Torr (high pressure), captured from supporting movies 5-8. (d) TMA concentration at 8.9 and 1.3 Torr over time  $(0 - 10 \\mathrm{ns})$ .","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_4","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":42,"y":14,"width":237,"height":305},{"panel_id":"b","x":308,"y":41,"width":240,"height":274},{"panel_id":"c","x":572,"y":65,"width":233,"height":248},{"panel_id":"d","x":846,"y":25,"width":421,"height":326}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_4.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":1272,"height":353,"image_format":"jpeg","image_sha256":"12734e15339aa708dce3dc0b6db69dd4e83987b1cec00accb85cb5f81c9ccc86","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_36_figure_6.jpg","caption":"Figure 6. (a) SEM image of a patterned sample; the bright part of this image corresponds to the area coated by ODPA and etched, whereas the dark part shows the  $\\mathrm{Al}_2\\mathrm{O}_3$  deposited area. (b) EDS elemental line scans for Al and O observed along the red line in the SEM image of (a). (c) AFM image of  $\\mathrm{Al}_2\\mathrm{O}_3$  on patterned ODPA and (d) height profiles of AFM line scans along the red line in (c).","id":"train/atomic-layer-deposition/simulation-usecase/36/figure_6","sample_id":"atomic-layer-deposition/simulation-usecase/36/figure_6","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"stacked spectra chart"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"spectra chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":0,"width":285,"height":290},{"panel_id":"b","x":352,"y":28,"width":306,"height":251},{"panel_id":"c","x":0,"y":314,"width":296,"height":264},{"panel_id":"d","x":337,"y":335,"width":321,"height":254}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/36/Seunggi Seo et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":658,"height":589,"image_format":"jpeg","image_sha256":"65bfd86b2f0d86c13e92f66e8f7d3925ea6f3d5fda2c261a818ed98b06c1c7f9","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_43_b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315.jpg","caption":"","id":"train/atomic-layer-deposition/simulation-usecase/43/b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315","sample_id":"atomic-layer-deposition/simulation-usecase/43/b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":332,"height":256},{"panel_id":"b","x":336,"y":0,"width":333,"height":255}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/images/b56ead30cb1cd96ec5c166c53860b766aee63c3b20763054561678baa6a9e315.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/43/Yuanxia Zheng et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"43","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"not_found"},"width":672,"height":258,"image_format":"jpeg","image_sha256":"7cdca1e4b67dbdeb7ece9a9d9def8bd82184e5c06b84eb5277b7ed950e3e7eec","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-etching_experimental-usecase_28_fig_6.jpg","caption":"FIG. 6. (a) Surface morphology and (b) reduction of surface roughness after isotropic ALE process as a function of the number of cycles.","id":"train/atomic-layer-etching/experimental-usecase/28/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/28/fig_6","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":74,"y":0,"width":594,"height":399},{"panel_id":"b","x":99,"y":439,"width":563,"height":396}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/28/Atomic layer etching of Al2O3 with NF3 plasma fluorination.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":673,"height":863,"image_format":"jpeg","image_sha256":"360b81d79310504fc53d6b1257fff8cccd96e860e488816170352f12be0f5883","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-etching_experimental-usecase_36_fig_12.jpg","caption":"Fig. 12. (Color online) (a) TEM image of the pattern sample after the  $\\mathrm{C_4F_8}$  plasma treatment for  $30~\\mathrm{s}$ . The atomic percentages of C, F, Ti, and Si obtained by EDX spectroscopy in (b) the upper portion and (c) the lower portion.","id":"train/atomic-layer-etching/experimental-usecase/36/fig_12","sample_id":"atomic-layer-etching/experimental-usecase/36/fig_12","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":14,"width":655,"height":450},{"panel_id":"b","x":10,"y":474,"width":672,"height":364}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/36/Cyclic C4F8 and O2 plasma etching of TiO2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"36","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":686,"height":1231,"image_format":"jpeg","image_sha256":"bbcc376ebb921233e3caa57a88231efecaa0a64e2e59d24721213f7c844eed09","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-etching_experimental-usecase_38_fig_6.jpg","caption":"FIG. 6. AFM analysis of surface roughness after (a) 0, (b) 100, (c) 300, and (d) 400 ALE cycles. Ra (roughness average) and Rq (root mean squared) were captured from  $5\\mu \\mathrm{m}$  scans.","id":"train/atomic-layer-etching/experimental-usecase/38/fig_6","sample_id":"atomic-layer-etching/experimental-usecase/38/fig_6","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":0,"width":1072,"height":1017}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/images/fig_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/38/High synergy atomic layer etching of AlGaNGaN.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"38","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":1077,"height":1019,"image_format":"jpeg","image_sha256":"891436f4668476d722f9d6a12c0870029e22e02fb3107f30fd8a6b6fe37aa1ce","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-etching_experimental-usecase_8_figure_6.jpg","caption":"Figure 6. AFM step height (a) after one ALET cycle of one monolayer of  $\\mathrm{MoS}_2$  and (b) after two ALET cycles of trilayer  $\\mathrm{MoS}_2$ . The  $\\mathrm{MoS}_2$  was patterned with a photoresist, and the photoresist was removed after the ALET for the measurement of the etch height using AFM. The big step heights at the boundary (two bright lines on the optical microscopic picture) are due to the photoresist residue remaining even after the photoresist removal to measure the etch step after two ALET cycles.","id":"train/atomic-layer-etching/experimental-usecase/8/figure_6","sample_id":"atomic-layer-etching/experimental-usecase/8/figure_6","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":3,"width":508,"height":631},{"panel_id":"b","x":3,"y":649,"width":511,"height":603}],"source":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/images/figure_6.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/experimental-usecase/8/Controlled Layer-by-Layer Etching of MoS2.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":519,"height":1253,"image_format":"jpeg","image_sha256":"10150d25638cbf75630ff8c8c473cdb9d79e5d67663cc0bb6adf4d9b7d96e7b7","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-etching_simulation-usecase_15_fig3.jpg","caption":"FIG.3. i 255  $\\mathbb{C}\\mathbb{I}_2$  impacts and  $1000~\\mathrm{Ar^{+}}$  impacts, the  $\\mathsf{Ar}^+$  energy is  $70\\in V.$  Yellow translucent spheres are Si and cyan solid spheres are Cl. Si atoms are translucent in order to visualize Cl atoms mixed into the amorphous layer. Panel (a) is the side view of the simulation cell after the first chlorination step, panel (b) is after the first ion bombardment step, panel (c) is after the fourth chlorination step, panel (d) is after the fourth ion bombardment step, panel (e) is after the eighth chlorination step, and panel (f) is after the eighth ion bombardment step. The snapshots were created in Visual Molecular Dynamics (VMD) (Ref. 42).","id":"train/atomic-layer-etching/simulation-usecase/15/fig3","sample_id":"atomic-layer-etching/simulation-usecase/15/fig3","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"unknown"},{"panel_id":"c","label":"unknown"},{"panel_id":"d","label":"unknown"},{"panel_id":"e","label":"unknown"},{"panel_id":"f","label":"unknown"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":114,"y":33,"width":273,"height":561},{"panel_id":"b","x":596,"y":15,"width":281,"height":589},{"panel_id":"c","x":1061,"y":37,"width":275,"height":569},{"panel_id":"d","x":117,"y":641,"width":272,"height":562},{"panel_id":"e","x":596,"y":649,"width":260,"height":554},{"panel_id":"f","x":1063,"y":667,"width":281,"height":541}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/images/fig3.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/15/Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:img_caption"},"width":1345,"height":1216,"image_format":"jpeg","image_sha256":"f3f7edd3ecf98b4fc506ab0f5c5a453eae84ef7b7426dde3783ad8a827768782","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-etching_simulation-usecase_29_fig_13.jpg","caption":"Fig. 13. Calculated degree of dimer dissociation for TMA and DMAF as a function of temperature. For DMAF, three dimer structures were considered, each with two F-bridges, one F-bridge and one  $\\mathrm{CH_3}$ -bridge, and two  $\\mathrm{CH_3}$ -bridges. The total pressures of TMA and DMAF were assumed to be 1 and 0.01 Torr, respectively.","id":"train/atomic-layer-etching/simulation-usecase/29/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/29/fig_13","subset":"unknown","split":"train","classification":[{"panel_id":"a","label":"unknown"},{"panel_id":"b","label":"multiple line chart"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":4,"width":653,"height":347},{"panel_id":"b","x":2,"y":362,"width":675,"height":467}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/images/fig_13.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/29/Thermal atomic layer etching mechanism of amorphous aluminum oxide.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"unknown","caption_source":"content.json:image_caption"},"width":683,"height":833,"image_format":"jpeg","image_sha256":"b34d65ca66ac9eb59287ff57f56f994059254b39760860ee97d11a92c2aba0a4","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}