{"file_name":"images/train_atomic-layer-etching_simulation-usecase_3_fig_12.jpg","caption":"FIG. 12. (Color online) Trend of etch depth per cycle (EPC) as a function of ion bombardment time  $(T_{I})$  and passivation time  $(T_{P})$ . The solid line represents an EPC of 1, and the shaded region is the window from  $0.9 < \\mathrm{EPC} < 1.1$ .","id":"train/atomic-layer-etching/simulation-usecase/3/fig_12","sample_id":"atomic-layer-etching/simulation-usecase/3/fig_12","subset":"area-chart","split":"train","classification":[{"panel_id":"a","label":"area chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The area chart illustrates the relationship between etch per cycle (EPC) with respect to passivation time (\\\\(T_p\\\\)) and ion bombardment time (\\\\(T_I\\\\)), with shaded regions indicating specific ranges of EPC.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Passivation Time (Tp, ms) | Ion Bombardment Time (Ti, s) AR=2 | AR=4 | AR=6 |\\n|---------------------------|------------------------------------|------|------|\\n| 5                         | 1.30                               | 1.30 | 1.30 |\\n| 25                        | 0.70                               | 0.90 | 1.10 |\\n| 45                        | 0.40                               | 0.60 | 0.90 |\\n| 64                        | 0.30                               | 0.45 | 0.70 |\\n| 84                        | 0.25                               | 0.35 | 0.55 |\\n| 104                       | 0.20                               | 0.30 | 0.45 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To investigate the pulse time parameter space, simulations were performed for TP from 5 to 105 ms, and TI from 0.1 to 1.4 s.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The solid lines are for conditions that produce EPC=1 ML, and the shaded areas indicate the range of 0.9<EPC<1.1 ML. Results are shown for aspect ratios of 2, 4 and 6. There are regions where EPC is near 1 ML and which are nearly independent of TI (nearly vertical in the image), depending dominantly\\non TP. These regions might be described as radical-starved for a continuous etch.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Other regions where EPC is near 1ML are almost independent of TP (nearly horizontal), depending dominantly on TI. These regions might be\\ndescribed as ion-starved for a continuous etch\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes. The width of the window for which 0.9<EPC<1.1 ML is largest at the transition between these two limiting regimes, indicating more tolerance to process variation\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":571,"height":484}],"source":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_12.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/images/fig_12.json","source_content":"icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-etching/simulation-usecase/3/Atomic layer etching of 3D structures in silicon Self-limiting.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"3","first_classification_panel_id":"a","first_classification_label":"area chart","caption_source":"content.json:img_caption"},"width":575,"height":492,"image_format":"jpeg","image_sha256":"1b13cf1e19b524f8184a8bd08fb27db7ee2d703f2aa83cec9e8280b65dda37a2","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}