{"file_name":"images/train_atomic-layer-deposition_experimental-usecase_8_figure_5.jpg","caption":"Figure 5. Box plots for the precursor vessel temperatures for the prior introduced precursor classes. Boxes contain the average  $50\\%$  of the respective dataset while white dots represent the arithmetic mean. The first quartile is the median of the lower half of the dataset. The second quartile represents the median of the respective dataset, and the third quartile is the median of the upper half of the dataset. The whiskers are restricted to a  $1.5x$  inter quartile range representing entries outside the box. Outliners are depicted as black dots. If lower or upper whiskers are not displayed an overlap with the respective quartile occurred.","id":"train/atomic-layer-deposition/experimental-usecase/8/figure_5","sample_id":"atomic-layer-deposition/experimental-usecase/8/figure_5","subset":"box-plot","split":"train","classification":[{"panel_id":"a","label":"box plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The box plot compares precursor vessel temperatures for eight rare earth precursor classes used in ALD: R(amd)3, R(amd)(Cp)2, R(or')x, R(Cp)3, R(thd)x, R(famd)3, R(guan)3, and R(tmsa)3. Temperatures range from approximately 80 to 200 °C. White squares indicate arithmetic means, boxes span the interquartile range, and black diamonds mark outliers. R(or')x shows the highest mean temperature near 165 °C, while R(amd)(Cp)2 displays the lowest mean around 131 °C.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| R(amd)\\\\_3 | R(amd)\\\\(Cp\\\\)_2 | R(or')\\\\_x | R(Cp)_3 | R(thd)_x | R(famd)_3 | R(guan)_3 | R(tmsa)_3 |\\n|---|---|---|---|---|---|---|---|\\n| 120 | 130 | 190 | 170 | 150 | 140 | 150 | 140 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The source temperature controls precursor vapor pressure and delivery rate to the reactor. If it is too low, delivery can be unstable and growth becomes mass transport limited. If it is too high, the precursor can decompose or produce parasitic CVD like contributions. Source temperature is therefore a practical indicator of volatility and thermal robustness for a given precursor family.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The alkoxide family, labeled R(or′)x, shows the highest overall range and high typical values compared with the other families.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Higher volatility at a given operating condition, meaning sufficient vapor pressure can be achieved with less heating.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Lower thermal stress on the precursor and delivery hardware\\n\\nReduced risk of precursor decomposition in the source lines\\n\\nImproved process stability and repeatability through easier vapor delivery\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":659,"height":471}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/images/figure_5.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/experimental-usecase/8/Adv Materials Inter - 2024 - Ghazy - Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"8","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:image_caption"},"width":667,"height":480,"image_format":"jpeg","image_sha256":"15b14ac81a9e579e000abbac7161f32af3dee582c1edf6775571688382f12387","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_29_fig_1.jpg","caption":"Fig. 1. Effect of precursor pulse time on  $\\mathrm{TiO_2}$  ALD growth rate. The vertical error bars indicate film uniformity across the sample (Selvaraj et al., 2013).","id":"train/atomic-layer-deposition/simulation-usecase/29/fig_1","sample_id":"atomic-layer-deposition/simulation-usecase/29/fig_1","subset":"box-plot","split":"train","classification":[{"panel_id":"a","label":"box plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The chart plots the experimental growth rate in nanometers per cycle against the precursor pulsing time, illustrating the saturation of the ALD process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pulsing Time (s) | Growth Rate (nm/cycle) |\\n|---|---|\\n| 1 | 0.023 |\\n| 2 | 0.040 |\\n| 4 | 0.040 |\\n| 6 | 0.042 |\\n| 8 |  0.040 |\\n| 14 | 0.042 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After ~ 2s.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The optimal pulse time for the fastest manufacturing would be 2 seconds.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Based on the error bars, higher uniformity is achieved at higher pulsing times.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":5,"width":657,"height":372}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/images/fig_1.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/29/Mina Shahmohammadi et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"29","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:img_caption"},"width":658,"height":378,"image_format":"jpeg","image_sha256":"b563a6fa08a0dfb9e80a8ea043b58d2a87ba0b0e5f530e2fe08d2aeac096bb4f","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/train_atomic-layer-deposition_simulation-usecase_30_figure_3.jpg","caption":"Figure 3. (a) Adsorption and reaction energies of the bonding steps of TMPS as illustrated in panel c are given as box plots for both  $\\mathrm{a - SiO_2}$  surface slabs. The red line gives the median reaction energy  $(\\Delta E)$  together with its mean electronic (  $\\Delta E_{\\mathrm{elec}}$  green) and dispersion (  $\\Delta E_{\\mathrm{disp}}$  blue) contributions. The dashed red line marks the total reaction energy on the  $\\alpha$  -quartz model.14 (b) Plot showing the inter-silanol distances of the different surface models (I, vertical lines mark the average  $\\mathrm{Si - OH}$  distance of the respective slabs. (c) Reaction schemes illustrating the chemisorption process (I, first row), the first condensation reaction to the SB (II, second row), and the second condensation reaction to the DB bonding configuration (III, third row).","id":"train/atomic-layer-deposition/simulation-usecase/30/figure_3","sample_id":"atomic-layer-deposition/simulation-usecase/30/figure_3","subset":"box-plot","split":"train","classification":[{"panel_id":"a","label":"box plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"reaction scheme"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":2,"width":878,"height":652},{"panel_id":"b","x":180,"y":11,"width":453,"height":306},{"panel_id":"c","x":943,"y":2,"width":458,"height":646}],"source":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/images/figure_3.json","source_content":"icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/train/atomic-layer-deposition/simulation-usecase/30/Paul Philipp Wellmann et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"box plot","caption_source":"content.json:img_caption"},"width":1406,"height":653,"image_format":"jpeg","image_sha256":"e5a538e104869543b3fa0305be99fbe9f80bc6436d5296334907a09311e1b52d","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}