{"file_name":"images/test_atomic-layer-deposition_experimental-usecase_48_fig_6.jpg","caption":"FIG. 6. (Color online) AFM scans with a scan area of  $500 \\times 500\\mathrm{nm}$  of the  $\\sim 32\\mathrm{nm}$ $\\mathrm{HfO_2}$  films (300 ALD cycles) deposited at (a)  $200^{\\circ}\\mathrm{C}$ , (b)  $300^{\\circ}\\mathrm{C}$ , (c)  $350^{\\circ}\\mathrm{C}$ , and (d)  $400^{\\circ}\\mathrm{C}$ . An increase in amount of the crystallites can be detected from 200 to  $400^{\\circ}\\mathrm{C}$  indicating enhanced crystallinity with increase in substrate stage temperature. Similar AFM scans of thicker  $\\sim 80\\mathrm{nm}$ $\\mathrm{HfO_2}$  (750 ALD cycles) films deposited at (e)  $250^{\\circ}\\mathrm{C}$  and (f)  $400^{\\circ}\\mathrm{C}$  show higher roughness.","id":"test/atomic-layer-deposition/experimental-usecase/48/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/48/fig_6","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"},{"panel_id":"e","label":"heatmap"},{"panel_id":"f","label":"heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":6,"width":486,"height":347},{"panel_id":"b","x":493,"y":1,"width":489,"height":349},{"panel_id":"c","x":3,"y":349,"width":491,"height":340},{"panel_id":"d","x":494,"y":347,"width":485,"height":340},{"panel_id":"e","x":1,"y":693,"width":491,"height":342},{"panel_id":"f","x":493,"y":690,"width":487,"height":346}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/images/fig_6.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-deposition/experimental-usecase/48/Sharma et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"48","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":983,"height":1036,"image_format":"jpeg","image_sha256":"2f278f698ab8b9d7d8fed512c6d6fb64576c6ac8a675cf6a75b35124d960a94f","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_experimental-usecase_47_FIG8_b_c.jpg","caption":"FIG. 8. (a)  $R_{\\mathrm{q}}$  of molybdenum films as a function of the number of ALE cycles at  $300^{\\circ}\\mathrm{C}$  as measured by AFM. AFM images of (b) an unetched film with a thickness of around  $55\\mathrm{nm}$  and (c) a film etched for 200 cycles, with a remaining thickness of  $41.6\\mathrm{nm}$ .","id":"test/atomic-layer-etching/experimental-usecase/47/FIG8_b_c","sample_id":"atomic-layer-etching/experimental-usecase/47/FIG8_b_c","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":5,"width":381,"height":379},{"panel_id":"b","x":392,"y":3,"width":515,"height":377}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG8_b_c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/images/FIG8_b_c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/experimental-usecase/47/Atomic layer etching of molybdenum with O2 and NbCl5.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":915,"height":390,"image_format":"jpeg","image_sha256":"ad64a2ad9b3555fb209bc7fd2c2d81c5b8676384800669f2d0032e514573c09c","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_11_fig_3.jpg","caption":"Fig. 3 - Film structure from the kMC simulations for Step A. The simulation begins with blue colors (unetched film). When the simulation progresses, a reaction site that is etched turns yellow. The left map shows the lattice at 0.111 s and the right one shows the lattice at 1.305 s. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.)","id":"test/atomic-layer-etching/simulation-usecase/11/fig_3","sample_id":"atomic-layer-etching/simulation-usecase/11/fig_3","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"Lattice colormap at t=0.111 s during Step A kMC simulation, showing the early stage of fluorination. Blue pixels represent unreacted Al2O3 surface sites, yellow pixels represent fluorinated (AlF3) sites. The random mixture of colors indicates approximately 50% progression with spatially uniform reaction across the surface.\"},{\"panel_id\":\"b\",\"text\":\"Lattice colormap at t=1.305 s showing near-complete fluorination. The lattice is almost entirely yellow with only sparse blue dots remaining, indicating that Step A is approaching completion (close to the 1.38 s full fluorination time).\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| x | y |\\n|---|---|\\n| 0 | 0 |\\n| 50 | 50 |\\n| 100 | 100 |\\n| 150 | 150 |\\n| 200 | 200 |\\n| 250 | 250 |\"},{\"panel_id\":\"b\",\"text\":\"| x | y |\\n|---|---|\\n| 0 | 0 |\\n| 50 | 50 |\\n| 100 | 100 |\\n| 150 | 150 |\\n| 200 | 200 |\\n| 250 | 250 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Blue represents unreacted Al2O3 surface sites, while yellow represents sites that have been fluorinated to form AlF3.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A 300×300 lattice was used, as shown by the axis scales ranging from 0 to approximately 300 in both x and y directions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The random spatial distribution reflects the self-limiting nature of ALE, where HF can adsorb at any available surface site with equal probability, leading to uniform coverage rather than island growth.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At 0.111 s, the surface shows a random mixture of blue and yellow pixels, indicating partial fluorination with roughly half the sites reacted. By 1.305 s, the surface is almost completely yellow with only isolated blue pixels remaining, demonstrating that fluorination is nearly complete. The uniform spatial distribution of the reaction confirms that Step A proceeds homogeneously across the surface without preferential nucleation sites.\"}]}]","bbox":[{"panel_id":"a","x":14,"y":2,"width":464,"height":474},{"panel_id":"b","x":541,"y":3,"width":463,"height":470}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/images/fig_3.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/11/Microscopic and data-driven modeling andoperation.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:img_caption"},"width":1009,"height":481,"image_format":"jpeg","image_sha256":"a0ed1eda7153ca507563dca7f7026ea68e57fb749fbfce2013e73b3ab2b5ee55","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_13.jpg","caption":"FIG. 13. 2D heat maps of  $\\Delta G$  free energies of CVE1 and SL reactions and corresponding \"minimum thermodynamic barrier\" to etch given by CVE1-SL at different reactant HF pressures from 0.01 to 2.0 Torr at a constant product pressure of 0.01 Torr. The CVE1 and SL contour plots (left and middle) share the same color bar and  $y$  axis.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_13","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_13","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"ΔG heatmap for CVE1 versus temperature and HF reactant pressure (0.01–2.0 Torr; product pressure fixed at 0.01 Torr). Most of the map sits in the negative-ΔG color range, consistent with CVE1 being thermodynamically favorable across broad conditions.\"},{\"panel_id\":\"b\",\"text\":\"ΔG heatmap for SL on the same axes and color scale as (a). The map is largely in positive-ΔG colors, with a low-temperature region trending toward negative ΔG, indicating SL becomes favorable only at sufficiently low T.\"},{\"panel_id\":\"c\",\"text\":\"Minimum thermodynamic barrier map defined as CVE1 − SL. Regions labeled “Etching” coincide with lower barrier colors, indicating conditions where CVE1 is thermodynamically preferred relative to SL.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The CVE1 map is largely in the negative-ΔG color range across the plotted HF pressure window, indicating broad thermodynamic favorability. As temperature decreases, the map trends toward less negative values in portions of the space, suggesting a reduced driving force. Overall, the figure supports CVE1 as favorable over much of the plotted T–P range rather than being confined to a narrow operating window.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A low thermodynamic barrier for etching.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At low temperatures.\"}]}]","bbox":[{"panel_id":"a","x":6,"y":10,"width":454,"height":469},{"panel_id":"b","x":471,"y":8,"width":425,"height":466},{"panel_id":"c","x":902,"y":7,"width":510,"height":467}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_13.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_13.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":1417,"height":478,"image_format":"jpeg","image_sha256":"8f499e17bc685a5c0a174707a539152903b48138d4da5b5a5105c1bf15e1bf3d","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_28_fig_14.jpg","caption":"FIG. 14. 2D heat maps of  $\\Delta G$  free energies of CVE1 and SL reactions and corresponding \"minimum thermodynamic barrier\" to etch given by CVE1-SL with respect to change in HF pressure from 0.01 to 2.0 Torr for product pressures of 0.01, 0.2, 1, and 2 Torr. Plots in each row share the same color bar and y axis.","id":"test/atomic-layer-etching/simulation-usecase/28/fig_14","sample_id":"atomic-layer-etching/simulation-usecase/28/fig_14","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"},{"panel_id":"b","label":"heatmap"},{"panel_id":"c","label":"heatmap"},{"panel_id":"d","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The CVE1 panels show ΔG as a function of temperature and reactant pressure for four product pressures (0.01–2 Torr). Across most of the plotted space, ΔG remains negative, indicating thermodynamically favorable CVE1 reactions. Favorability persists from low to high temperatures, with only limited sensitivity to reactant pressure, even as product pressure increases.\"},{\"panel_id\":\"b\",\"text\":\"The SL panels show ΔG landscapes that are predominantly positive over the same temperature and pressure ranges. SL becomes thermodynamically favorable only at low temperatures, with the favorable region shrinking as temperature increases. Increasing product pressure does not significantly expand the SL-favorable regime.\"},{\"panel_id\":\"c\",\"text\":\"The CVE1–SL panels map the minimum thermodynamic barrier for etching. Low-barrier regions occur primarily at lower temperatures and lower reactant pressures, indicating conditions where CVE1 is strongly preferred over SL. As product pressure increases from 0.01 to 2 Torr, these low-barrier regions progressively contract, showing that higher product pressures suppress the thermodynamic driving force for etching.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"},{\"panel_id\":\"c\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"As product pressure increases, the region of low CVE1 − SL barrier becomes smaller across the temperature–pressure space. This indicates that higher product pressures thermodynamically disfavor etching by increasing the minimum free-energy separation between the CVE1 and SL pathways.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A low value of CVE1 − SL indicates that the CVE1 pathway is thermodynamically favored over SL, corresponding to a reduced minimum barrier for etching under those conditions.\"}]},{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"CVE1.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":6,"width":415,"height":924},{"panel_id":"b","x":441,"y":6,"width":277,"height":927},{"panel_id":"c","x":735,"y":4,"width":289,"height":929},{"panel_id":"d","x":1055,"y":4,"width":368,"height":927}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_14.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/images/fig_14.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/28/Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"28","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":1428,"height":936,"image_format":"jpeg","image_sha256":"13bb9f8b64368e49b9a6e32a23053a06b166195e9a935dae19214015f05bf0a9","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c.jpg","caption":"0.20 0.25 0.30 0.35 0.40 0.45 Etching Per Cycle (Å/cycle) (a)","id":"test/atomic-layer-etching/simulation-usecase/34/914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c","sample_id":"atomic-layer-etching/simulation-usecase/34/914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and substrate velocity. The colour gradient changes primarily along the substrate velocity axis, with higher values at higher velocities and lower values at lower velocities. In contrast, the dependence on TMA flow rate is relatively weak across the range shown.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA flow rate (sccm)| Substrate velocity (mm/s)| Relative value |\\n|---------------------|--------------------------|----------------|\\n| 20                  | 100                      | High           |\\n| 60                  | 100                      | High           |\\n| 100                 | 100                      | High           |\\n| 20                  | 60                       | Medium         |\\n| 60                  | 60                       | Medium         |\\n| 100                 | 60                       | Medium         |\\n| 20                  | 20                       | Low            |\\n| 60                  | 20                       | Low            |\\n| 100                 | 20                       | Low            |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and substrate velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The value decreases steadily as substrate velocity decreases. Higher velocities correspond to higher values (warmer colors), while lower velocities show lower values (cooler colors), indicating a strong dependence on substrate velocity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 80–100 mm/s.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":422}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/914be4f0e9d4d0d3dfebb73a8c50064cefab93d602eebb6d6353417eb27afa8c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":422,"image_format":"jpeg","image_sha256":"ca26b8e2fd86514415a062844ae117143baae657d0a37e1560e601cae0916d68","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29.jpg","caption":"0 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 Etching Per Cycle (Å/cycle) (a)","id":"test/atomic-layer-etching/simulation-usecase/34/ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29","sample_id":"atomic-layer-etching/simulation-usecase/34/ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and substrate velocity. The color distribution forms horizontal bands, indicating a strong dependence on substrate velocity. A higher-value band appears at intermediate velocities, while both low and high velocities show lower values, with relatively little variation across TMA flow rate.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA flow rate (sccm)| Substrate velocity (mm/s)| Relative value |\\n|---------------------|--------------------------|----------------|\\n| 20                  | 90                       | Low            |\\n| 60                  | 90                       | Low            |\\n| 100                 | 90                       | Low            |\\n| 20                  | 60                       | High           |\\n| 60                  | 60                       | High           |\\n| 100                 | 60                       | High           |\\n| 20                  | 30                       | Low            |\\n| 60                  | 30                       | Low            |\\n| 100                 | 30                       | Low            |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and substrate velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The heatmap shows a clear banded pattern along the substrate velocity axis. Values are highest at intermediate velocities, while both lower and higher velocities correspond to lower values. This indicates that substrate velocity has a stronger influence on the mapped quantity than TMA flow rate.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around the mid-range velocities, approximately 50–70 mm/s.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":431}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/ac99266dacf1d4e2931e93ab68af6c1b11c0246b57fa839c8e6387242bd3ec29.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":431,"image_format":"jpeg","image_sha256":"aa496fc2687f5c6adb1164b8af96fb6e66a4190a9104f1d5b221eb4c833db0c7","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1.jpg","caption":"(b)","id":"test/atomic-layer-etching/simulation-usecase/34/c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1","sample_id":"atomic-layer-etching/simulation-usecase/34/c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with HF flow rate and substrate velocity. The highest values appear at low HF flow rates and high substrate velocities, forming a pronounced hot spot in the upper-left region. Values decrease toward higher HF flow rates and lower substrate velocities, indicating a strong dependence on both parameters.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | Substrate velocity (mm/s) | Relative value |\\n|--------------------|--------------------------|----------------|\\n| 20                 | 90                       | High           |\\n| 30                 | 90                       | High           |\\n| 40                 | 90                       | Medium         |\\n| 20                 | 60                       | Medium         |\\n| 50                 | 60                       | Medium         |\\n| 80                 | 60                       | Low            |\\n| 20                 | 30                       | Low            |\\n| 60                 | 30                       | Low            |\\n| 100                | 30                       | Low            |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF flow rate and substrate velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The value is highest at low HF flow rates combined with high substrate velocities. As HF flow rate increases or substrate velocity decreases, the value drops. Producing a clear gradient away from the upper-left region of the heatmap.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Low HF flow rate with high substrate velocity, Moderate HF flow rate with high substrate velocity.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/c591785cc8731d91e2e3099dcdbb4c8894fab2f514bc5881d0060ecb78b0e9a1.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"981809dd235de14826775fb1be3a2d93426817aa3a816244fc40dd82c72e98e0","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041.jpg","caption":"(b)","id":"test/atomic-layer-etching/simulation-usecase/34/c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041","sample_id":"atomic-layer-etching/simulation-usecase/34/c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with HF flow rate and substrate velocity. Values are highest at low substrate velocities and decrease steadily as substrate velocity increases. In contrast, changes across HF flow rate are relatively small, indicating that substrate velocity is the dominant parameter influencing the pattern.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | Substrate velocity (mm/s) | Relative value |\\n|--------------------|--------------------------|----------------|\\n| 20                 | 30                       | High           |\\n| 60                 | 30                       | High           |\\n| 100                | 30                       | High           |\\n| 20                 | 60                       | Medium         |\\n| 60                 | 60                       | Medium         |\\n| 100                | 60                       | Medium         |\\n| 20                 | 90                       | Low            |\\n| 60                 | 90                       | Low            |\\n| 100                | 90                       | Low            |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value decreases as substrate velocity increases. Low velocities correspond to high values, while higher velocities show progressively lower values. Producing a strong vertical gradient across the plot.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF flow rate and substrate velocity.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"At low substrate velocities, roughly 20–40 mm/s.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/c96a5d146b2cea20f9cb7e1ccc44d625f87d3773c5b838f7e98fbe8484a40041.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"290d0eb2382b9bf3202cbb7f2ae784ba8d851f6cb1c0d861e919dd8f258ec3c8","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c.jpg","caption":"(b)","id":"test/atomic-layer-etching/simulation-usecase/34/dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c","sample_id":"atomic-layer-etching/simulation-usecase/34/dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with HF flow rate and substrate velocity. Most of the field remains at low values, indicated by dark blue colors. Only minor variations appear at intermediate substrate velocities, while changes across HF flow rate are weak.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | Substrate velocity (mm/s) | Relative value |\\n|--------------------|--------------------------|----------------|\\n| 20                 | 90                       | Low            |\\n| 60                 | 90                       | Low            |\\n| 100                | 90                       | Low            |\\n| 20                 | 60                       | Low            |\\n| 60                 | 60                       | Medium         |\\n| 100                | 60                       | Low            |\\n| 20                 | 30                       | Low            |\\n| 60                 | 30                       | Low            |\\n| 100                | 30                       | Low            |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF flow rate and substrate velocity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value remains low across most substrate velocities. Slight increases appear at intermediate velocities. The overall variation with velocity is weak compared to other heatmaps in the paper.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Around intermediate velocities, approximately 50–70 mm/s.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/dbf6d7327e6a2ccf2fdd7a2ca92f53c15d845586892393b10ca6af8bd9f89d0c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"5a59de09a595a6fc137275c30f475bf3ccf796427b48d626f1be62bcf5ea0af8","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c.jpg","caption":"(a)","id":"test/atomic-layer-etching/simulation-usecase/34/def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c","sample_id":"atomic-layer-etching/simulation-usecase/34/def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and substrate velocity. Most of the field remains at low values across the parameter space. Only a slight increase appears at high substrate velocity and high TMA flow rate, indicating a weak dependence on both parameters.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA flow rate (sccm) | Substrate velocity (mm/s) | Relative value |\\n|---------------------|--------------------------|----------------|\\n| 20                  | 90                       | Low            |\\n| 60                  | 90                       | Low            |\\n| 100                 | 90                       | Medium         |\\n| 20                  | 60                       | Low            |\\n| 60                  | 60                       | Low            |\\n| 100                 | 60                       | Low            |\\n| 20                  | 30                       | Low            |\\n| 60                  | 30                       | Low            |\\n| 100                 | 30                       | Low            |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value stays low over most of the heatmap. Only a small increase is visible at high substrate velocities combined with high TMA flow rates. This suggests that neither parameter strongly affects the value within most of the explored range.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and substrate velocity.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At high substrate velocity and high TMA flow rate.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/def461cf6c04a724419ce5334587e87c371ce72c124ef5a8a95568f9fcda168c.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"53afab8fcfdef0c3532c0e16bf7806fc6755615e5dce8045ac9676159706cd80","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f.jpg","caption":"","id":"test/atomic-layer-etching/simulation-usecase/34/e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f","sample_id":"atomic-layer-etching/simulation-usecase/34/e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the color scale used to represent etching per cycle values in Å per cycle. It serves as a legend for the heatmaps, mapping color to numerical etch-rate values rather than displaying data directly.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Etching Per Cycle (Å/cycle) |\\n|---|\\n| 0 |\\n| 0.005 |\\n| 0.010 |\\n| 0.015 |\\n| 0.020 |\\n| 0.025 |\\n| 0.030 |\\n| 0.035 |\\n| 0.040 |\\n| 0.045 |\\n| 0.050 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The heatmap legend provides a visual reference for mapping spatial variations in the etch rate across a surface during atomic layer etching. Each color corresponds to a specific etch depth per cycle, enabling rapid identification of regions with higher or lower material removal. This can help in diagnosing etch uniformity, directional anisotropy, or localized enhancement due to plasma exposure, precursor reactivity, or surface morphology. By associating color with quantitative depth, researchers can analyze process effectiveness and refine conditions for improved uniformity and selectivity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Ion flux distribution, precursor concentration gradients, surface topology, angle of incidence, local temperature\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"0.050 Å/cycle\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":817,"height":100}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/e099de4567b39ebac66fe519c6808b2a1c75e4240d4c9af1e27e018ab582608f.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"not_found"},"width":817,"height":100,"image_format":"jpeg","image_sha256":"10f9805e63a2366f763d0c2c328b008a2eed51fa10a4c95ae6587ce804768969","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_10.jpg","caption":"Fig. 10. Artificial neural network model etching per cycle deviation from the multiscale CFD data in Fig. 7 represented by iso-contours of (a) HF flow rate of  $20~\\mathrm{sccm}$ , (b) TMA flow rate of  $40~\\mathrm{sccm}$ , and (c) substrate velocity of  $80~\\mathrm{mm/s}$ . The MSE of the ANN model is  $2.251 \\times 10^{-4}~\\text{\\AA}/\\text{cycle}$ . (c)","id":"test/atomic-layer-etching/simulation-usecase/34/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_10","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with HF flow rate and TMA flow rate. Most of the parameter space exhibits low values, with only a slight increase appearing at higher TMA flow rates. Variation across HF flow rate is minimal, indicating a weak dependence on this parameter.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | TMA flow rate (sccm) | Relative value |\\n|--------------------|---------------------|----------------|\\n| 20                 | 90                  | Low            |\\n| 60                 | 90                  | Low            |\\n| 100                | 90                  | Medium         |\\n| 20                 | 60                  | Low            |\\n| 60                 | 60                  | Low            |\\n| 100                | 60                  | Low            |\\n| 20                 | 30                  | Low            |\\n| 60                 | 30                  | Low            |\\n| 100                | 30                  | Low            |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF flow rate and TMA flow rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At higher TMA flow rates.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value remains low across most HF and TMA flow rate combinations. A modest increase is visible at higher TMA flow rates. While changes across HF flow rate are minimal.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":486,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_10.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":486,"height":433,"image_format":"jpeg","image_sha256":"9f756c80a21cd2211ac8a9ab26caa643f622abcaf2f23cff00b80d393e3a7545","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_7.jpg","caption":"Fig. 7. Multiscale CFD simulation results of the etching per cycle represented by iso-contours of (a) HF flow rate of  $20~\\mathrm{sccm}$ , (b) TMA flow rate of  $40~\\mathrm{sccm}$ , and (c) substrate velocity of  $80~\\mathrm{mm/s}$ . (c)","id":"test/atomic-layer-etching/simulation-usecase/34/fig_7","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_7","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and HF flow rate. Values increase strongly with increasing TMA flow rate, while variation across HF flow rate is relatively small. This indicates that TMA flow rate is the dominant parameter influencing the pattern.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | TMA flow rate (sccm) | Relative value |\\n|--------------------|---------------------|----------------|\\n| 20                 | 20                  | Low            |\\n| 60                 | 20                  | Low            |\\n| 100                | 20                  | Low            |\\n| 20                 | 60                  | Medium         |\\n| 60                 | 60                  | Medium         |\\n| 100                | 60                  | Medium         |\\n| 20                 | 90                  | High           |\\n| 60                 | 90                  | High           |\\n| 100                | 90                  | High           |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value increases steadily as TMA flow rate increases. Low TMA flow rates correspond to lower values. Higher TMA flow rates produce consistently higher values across the HF flow range.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and HF flow rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"At high TMA flow rates, approximately 80–100 sccm.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_7.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":483,"height":433,"image_format":"jpeg","image_sha256":"d3ba5be36485d2270904c7d4a2e98f28d27f19a02589b4e63698eb21a4c32202","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/test_atomic-layer-etching_simulation-usecase_34_fig_8.jpg","caption":"Fig. 8. Linear regression model etching per cycle deviation from the multiscale CFD data in Fig. 7 represented by iso-contours of (a) HF flow rate of  $20~\\mathrm{sccm}$ , (b) TMA flow rate of  $40~\\mathrm{sccm}$ , and (c) substrate velocity of  $80~\\mathrm{mm/s}$ . The MSE of the linear regression model is  $4.236 \\times 10^{-4} \\, \\text{\\AA}/\\text{cycle}$ . (c)","id":"test/atomic-layer-etching/simulation-usecase/34/fig_8","sample_id":"atomic-layer-etching/simulation-usecase/34/fig_8","subset":"heatmap","split":"test","classification":[{"panel_id":"a","label":"heatmap"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The heatmap shows how the mapped value varies with TMA flow rate and HF flow rate. A pronounced high-value region appears at low HF flow rates and low TMA flow rates. Outside this region, values remain low across most of the parameter space, indicating a localized dependence on both parameters.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| HF flow rate (sccm) | TMA flow rate (sccm) | Relative value |\\n|--------------------|---------------------|----------------|\\n| 20                 | 20                  | Low            |\\n| 60                 | 20                  | Low            |\\n| 100                | 20                  | Low            |\\n| 20                 | 60                  | Medium         |\\n| 60                 | 60                  | Medium         |\\n| 100                | 60                  | Medium         |\\n| 20                 | 90                  | High           |\\n| 60                 | 90                  | High           |\\n| 100                | 90                  | High           |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The mapped value is highest at low HF and low TMA flow rates, forming a localized high-value region. As either flow rate increases, the value drops sharply and remains low across most of the remaining parameter space.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"TMA flow rate and HF flow rate.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Low HF flow rate, Low TMA flow rate\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":483,"height":433}],"source":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_8.jpg","provenance":{"source_annotation":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/images/fig_8.json","source_content":"icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/content.json","source_pdf":["icdar2026-competition-data/test/gold_standard_test_set/atomic-layer-etching/simulation-usecase/34/Machine learning-based run-to-run control of a spatial thermal.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"34","first_classification_panel_id":"a","first_classification_label":"heatmap","caption_source":"content.json:image_caption"},"width":483,"height":433,"image_format":"jpeg","image_sha256":"7fad847c71d97ce91b82607e659e0026177d2e4aa27e51df5f1cbc7b646a2be5","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}