{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig1.jpg","caption":"Fig.1. TiN film on native silicon oxide.","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig1","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig1","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A cross-sectional TEM image of an ALD-grown TiN film on native silicon oxide (scale bar 20 nm). The film shows dense, vertically oriented columnar grains with continuous grain boundaries running through the film thickness; the TiN/SiO₂ interface is sharp, indicating good adhesion and conformal ALD growth.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The columnar grain structure indicates strong vertical grain boundaries, which can serve as fast diffusion pathways for copper, potentially compromising barrier performance. However, the dense film and sharp interface suggest good growth uniformity and adhesion, making TiN an attractive barrier candidate when complemented by techniques such as nanolaminates to disrupt grain boundary continuity. These structural insights directly inform how TiN behaves under thermal and chemical stress during device fabrication.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The grain interiors appear brighter and more uniform, while the grain boundaries appear as darker vertical lines extending through the film thickness.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Continuous columnar grain boundaries, Dense polycrystalline structure, Sharp TiN/SiO₂ interface, Full-thickness grain alignment\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":647,"height":241}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":647,"height":241,"image_format":"jpeg","image_sha256":"4e72412971d99d5e720deed25cf0835032f6c9b25ff35b261ac1fe2a1320f153","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_4.jpg","caption":"Fig. 4. Marked copper pitting when  $\\mathbf{W}_{x}\\mathbf{N}$  film is deposited on copper (a). No copper pitting when  $\\mathrm{WN}_x\\mathrm{C}_y$  film is deposited on copper (b).","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_4","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows severe copper pitting when WₓN is deposited, evidenced by large dark voids and etched regions.\"},{\"panel_id\":\"b\",\"text\":\"shows a smooth, intact copper surface when WNₓCᵧ is deposited, demonstrating that adding triethylboron prevents corrosive by-product attack and eliminates copper pitting.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absence of copper pitting indicates that WNₓCᵧ films prevent corrosive by-products, such as HF and HCl, from forming during deposition. This chemical stability is essential in semiconductor applications because surface damage severely compromises barrier integrity, adhesion, and overall device reliability. WNₓCᵧ’s compatibility with copper therefore makes it a superior candidate for diffusion barrier layers in advanced interconnect structures.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Panel (a) shows deep pits and surface damage, while panel (b) shows a smooth, uniform copper surface with no visible pitting.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Presence of pits and voids in WₓN deposition, Smooth, intact copper surface after WNₓCᵧ deposition, Absence of corrosive by-product attack in panel (b), Clear contrast between damaged and undamaged regions\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":659,"height":474},{"panel_id":"b","x":8,"y":502,"width":651,"height":431}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":659,"height":933,"image_format":"jpeg","image_sha256":"c5762296ace71c31905eaed3e6f19e930dc52d3989a29db329fa6fb6a2f7aa44","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_5.jpg","caption":"Fig. 5. Left figure depicts copper after TiN deposition; marked pitting can be observed (a). Right figure depicts a copper surface where TiN film is deposited on top of 50 cycles  $\\mathrm{WN_xC_y}$  film (b).","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_5","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_5","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"shows severe copper pitting when TiN is deposited directly on copper, visible as numerous dark etched regions.\"},{\"panel_id\":\"b\",\"text\":\"shows a smooth, pit-free copper surface when a thin WNₓCᵧ layer (~50 cycles) is inserted before TiN deposition, demonstrating that the interlayer prevents corrosive by-product attack.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"},{\"panel_id\":\"b\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Preventing copper pitting is essential because surface defects compromise adhesion, increase electrical resistance, and reduce long-term reliability of interconnect structures. The WNₓCᵧ interlayer acts as a chemical buffer that blocks corrosive by-products generated during TiN ALD, preserving copper surface integrity. This enables TiN to be used in multilayer barrier stacks without damaging underlying copper, improving overall device performance and stability.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Direct TiN deposition produces heavy pitting and surface damage, while TiN deposited over WNₓCᵧ results in a smooth, pit-free copper surface.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, adding the WNₓCᵧ interlayer prevents copper pitting that otherwise occurs during direct TiN deposition.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Absence of pits or voids, Smooth and continuous surface, Lack of corrosive attack patterns, Reduced by-product interaction with copper\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":650,"height":440},{"panel_id":"b","x":0,"y":469,"width":650,"height":436}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":650,"height":905,"image_format":"jpeg","image_sha256":"e066ed024d54efea2c57ebbb1dde6003be21ab408522b8587a78de2ad85150b6","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_6.jpg","caption":"Fig. 6. Nanolaminate film stack of (TiN  $(10\\mathrm{nm}) / 8\\times (\\mathrm{W_xN}(2\\mathrm{nm}) + \\mathrm{TiN}(2\\mathrm{nm})) / \\mathrm{TiN}(10\\mathrm{nm}))$ .","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_6","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_6","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"the TEM image displays a nanolaminate consisting of TiN (10 nm) at the top and bottom, with eight repeated bilayers of WₓN (2 nm) and TiN (2 nm) in between. The alternating layers appear as clear, periodic dark–bright bands, demonstrating precise ALD thickness control and well-defined interfaces. The structure effectively interrupts continuous grain boundaries, improving its function as a diffusion barrier.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The alternating TiN and WₓN layers create a tortuous diffusion path that significantly hinders the movement of impurities such as copper. By breaking continuous grain boundaries, the nanolaminate structure prevents fast diffusion channels and enhances thermal and chemical stability. This precise ALD-engineered layering provides superior barrier reliability compared to single-layer nitride films, making it suitable for advanced interconnect technologies.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The TiN layers appear brighter, while the WₓN layers appear darker, forming a consistent repeating pattern that confirms uniform bilayer thickness across the structure.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the ALD process clearly forms well-defined alternating TiN and WₓN layers, visible as distinct contrast bands in the TEM image.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Multiple well-defined interfaces, Alternating high-contrast layers, Disruption of continuous grain boundaries, Uniform nanometer-scale layer thickness\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":830,"height":341}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_6.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_6.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":830,"height":341,"image_format":"jpeg","image_sha256":"d804103abc77167606542d1b9c8a360f876ee1f908abe377c9b59914afd6ccb0","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_7.jpg","caption":"Fig. 7. Nanolaminate film stack of  $(9\\times (\\mathrm{WN_xC_y}(2\\mathrm{nm}) + \\mathrm{TiN}(2\\mathrm{nm})))$ .","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_7","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The TEM micrograph displays a nanolaminate structure formed by nine repeated bilayers of WNₓCᵧ (2 nm) and TiN (2 nm). The alternating dark and light bands indicate well-defined, nanometer-scale layering with uniform thickness. This periodic structure confirms precise ALD control and highlights the multilayer design intended to disrupt continuous grain boundaries and enhance diffusion barrier performance.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The alternating WNₓCᵧ and TiN layers create a highly segmented microstructure that prevents continuous grain boundaries from forming. This forces diffusing species such as copper to follow a much longer, more tortuous path, significantly reducing the likelihood of penetration through the barrier. The well-controlled, nanoscale periodicity provided by ALD ensures predictable performance, making the structure ideal for high-reliability interconnect applications.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The WNₓCᵧ layers appear darker while the TiN layers appear brighter, forming a periodic pattern that repeats uniformly throughout the film.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the TEM image clearly shows alternating contrast bands consistent with sequential WNₓCᵧ and TiN layering.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Multiple nanoscale interfaces, Uniform 2 nm periodicity, Alternating composition layers, Interrupted grain boundary pathways\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":664,"height":536}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":664,"height":536,"image_format":"jpeg","image_sha256":"236cd6a16bbdb8efcb7d6ef0dc7806a7690c1c93ef28d3c8367c0f4677a5c30f","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig2.jpg","caption":"FIG.2. Cross-sectional FE-SEM image of as-deposited  $\\mathrm{Ga}_2\\mathrm{O}_3$  thin film on patterned  $\\mathrm{SiO}_2 / \\mathrm{Si}$  substrate deposited at  $200^{\\circ}\\mathrm{C}$  using PEALD.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig2","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig2","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":6,"width":464,"height":360}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":469,"height":369,"image_format":"jpeg","image_sha256":"27b83a5525700d0beb093cd23a1041a75d7aedd9e48d502ef453c86498bc02f7","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_46_fig_3.jpg","caption":"FIG. 3. Bright field TEM micrographs of  $\\mathrm{Pd / 9nm}$  (nominal) ALD  $\\mathrm{HfO_2 / InGaAs / InP}$  MOS devices for (a) in situ  $50^{\\circ}\\mathrm{C}$ $\\mathrm{H}_2\\mathrm{S}$  passivated InGaAs and (b) unpassivated InGaAs. The actual  $\\mathrm{HfO_2}$  layer [and interfacial layer (IL)] thicknesses measured by TEM were  $5.2 \\mathrm{nm}$  (1.9 nm IL) unpassivated device,  $9.4 \\mathrm{nm}$  (0.8 nm IL)  $50^{\\circ}\\mathrm{C}$  device,  $13.5 \\mathrm{nm}$  (0.9 nm IL)  $200^{\\circ}\\mathrm{C}$  device,  $10.8 \\mathrm{nm}$  (0.9 nm IL)  $350^{\\circ}\\mathrm{C}$  device, and  $11 \\mathrm{nm}$  (1.3 nm IL)  $(\\mathrm{NH_4})_2\\mathrm{S}$  passivated device.","id":"validation/atomic-layer-deposition/experimental-usecase/46/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/46/fig_3","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"TEM cross-sectional view of a device where layers Pd, HfO₂, and InGaAs can be seen with the image representing in situ 50 °C H2S passivated InGaAs\"},{\"panel_id\":\"b\",\"text\":\"TEM cross-sectional view of  unpassivated InGaAs device\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Pd |   (HfO<sub>2</sub>)| Interfacial layer (IL)| \\n|---------|-----------------|-----------|\\n|  9nm     |   9.4 nm    | 0.8 nm       |\"},{\"panel_id\":\"b\",\"text\":\"| Pd |  (HfO<sub>2</sub>) | Interfacial layer (IL)| \\n|---------|-----------------|-----------|\\n|  9nm     |   5.2 nm    | 1.9 nm       |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The interfacial layer represents the interfacial oxide growth which can be used to qualify the working of passivation.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For a 50 °C in situ H2S passivated InGaAs device the interfacial layer (IL) thickness is 0.8 nm  between the HfO2 and InGaAs. This is less than half the thickness of the IL of 1.9 nm measured by TEM for the unpassivated device in b.  This indicates that this in situ passivation technique is effective in significantly inhibiting interfacial oxide growth.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Bright field TEM micrographs were performed over f Pd/ ALD HfO2 /InGaAs/InP MOS devices.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The actual HfO2 layer and interfacial layer (IL) thicknesses measured by TEM are as follows\\n1. 5.2 nm HfO2 and 1.9 nm IL for unpassivated device\\n2. 9.4 nm HfO2 and 0.8 nm IL for 50 °C H2S passivated device\\n3.  13.5 nm HfO2 and 0.9 nm IL for 200 °C H2S passivated device\\n4.  10.8 nm HfO2 and 0.9 nm IL for 350 °C  H2S passivated device\\n5. 11 nm HfO2 and 1.3 nm IL for (NH4)2S passivated device.\"}]}]","bbox":[{"panel_id":"b","x":4,"y":259,"width":449,"height":234},{"panel_id":"a","x":2,"y":0,"width":454,"height":250}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/46/OaConnor et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"46","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":456,"height":494,"image_format":"jpeg","image_sha256":"806d98f31645f1289c8b2a07599839a34c35d1a2796a7b2111969930f17523f9","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_47_fig_4.jpg","caption":"Fig. 4. Atomic force micrographs of two  $\\mathrm{Al}_2\\mathrm{O}_3$  films of 211 Å and 157 Å thicknesses both having RMS roughnesses of  $5^{\\circ}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/47/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/47/fig_4","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":1,"y":3,"width":325,"height":370},{"panel_id":"b","x":326,"y":0,"width":314,"height":368}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/Wade et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":642,"height":372,"image_format":"jpeg","image_sha256":"07fa38ff13183307062375a281472d25209edad8a303114f89d3c286d7f5bbdb","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_58_fig_1.jpg","caption":"FIG. 1. Cross sectional HR-TEM images of (a) PVD Co film grown at  $t_r$  and (b) PE-ALD Co.","id":"validation/atomic-layer-deposition/experimental-usecase/58/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/58/fig_1","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":4,"y":5,"width":301,"height":300},{"panel_id":"b","x":305,"y":3,"width":300,"height":303}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":602,"height":305,"image_format":"jpeg","image_sha256":"685986e0192b25ed9cdf50b66a8a85684bd052ce4d1ae321f43ba8699930a814","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_58_fig_4.jpg","caption":"FIG. 4. Cross sectional HR-TEM images of PE-ALD Co film annealed at  $800^{\\circ}\\mathrm{C}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/58/fig_4","sample_id":"atomic-layer-deposition/experimental-usecase/58/fig_4","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":7,"y":8,"width":465,"height":458}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/58/Lee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":469,"height":467,"image_format":"jpeg","image_sha256":"c65cbe406961163f97416804e649ca7b61ba9ee122eb0f7c5c4bd8f80877981f","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_a.jpg","caption":"(a)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_a","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_a","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a high-resolution view of a nanostructured film composed of closely packed grains. Individual grains are clearly resolved, with sizes mostly in the range of a few nanometers. The grains appear irregular and interconnected, forming a dense network with visible boundaries. The overall texture suggests a polycrystalline structure rather than an amorphous film.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The small, closely packed grains suggest that the film likely formed through nucleation at many sites followed by limited grain growth. This is typical of low-temperature deposition or processes where surface diffusion is restricted.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"A fine-grained structure increases the density of grain boundaries, which can affect electrical conductivity, diffusion, and mechanical stability. Depending on the application, this can either enhance performance or introduce additional scattering and resistance.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A fine-grained structure increases the density of grain boundaries, which can affect electrical conductivity, diffusion, and mechanical stability. Depending on the application, this can either enhance performance or introduce additional scattering and resistance.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At nanometer scales, grain size strongly influences film behavior, including charge transport, chemical reactivity, and stability. Knowing the grain size distribution helps link deposition conditions to final film performance and reliability.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":6,"width":437,"height":433}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_a.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":441,"height":445,"image_format":"jpeg","image_sha256":"d8fbbc20b864e39453651fffb23067e6f5aeb0a84da7887346f23e5bfc988c6c","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_b.jpg","caption":"","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_b","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_b","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This image shows a dense nanocrystalline surface with closely packed grains in the 5–15 nm size range. The grains have irregular shapes and form a continuous network with well-defined boundaries, indicating a polycrystalline film rather than an amorphous layer. There are no obvious pinholes or large voids visible at this scale, suggesting good surface coverage. The contrast variations across grains are consistent with differences in crystallographic orientation or thickness, which is typical for nanoscale oxide films.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The small, clearly separated grains and visible boundaries suggest the film is polycrystalline with nanoscale crystallites rather than amorphous. At this grain size, the film likely formed through many nucleation events followed by limited grain growth, which is common for low-temperature or plasma-assisted deposition processes. The structure points to crystallinity being present but not yet coarsened.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At higher temperatures or after annealing, the grains would likely grow larger, and the number of grain boundaries would decrease. You would expect smoother contrast regions, fewer very small grains, and possibly a more uniform grain size distribution. In some cases, grain coalescence could also reduce boundary density and slightly densify the film further.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Substrate temperature during growth\\n-Plasma activation or reactive species energy \\n-Nucleation density during the initial cycles\\n-Growth per cycle and overall thickness\\nSurface diffusion length of adsorbed species\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A dense nanocrystalline structure provides full surface coverage and minimizes large defects, which helps keep properties more uniform across the film. While grain boundaries can influence transport properties, their small and evenly distributed nature often leads to predictable, repeatable behavior rather than localized failures. This is generally preferable to films with pinholes or large voids, especially in thin-film devices.\"}]}]","bbox":[{"panel_id":"a","x":10,"y":10,"width":425,"height":431}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_b.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":441,"height":442,"image_format":"jpeg","image_sha256":"58a360c825b600800e431ac6bb3bfd10af77e07774c6880d6c174b11255642f9","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_c.jpg","caption":"(c)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_c","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_c","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This microscopy image shows a dense nanocrystalline surface with several localized regions highlighted by yellow circles. The circled areas correspond to darker contrast features that differ slightly from the surrounding grains, possibly indicating local defects, compositional variations, or thickness differences. The surrounding microstructure consists of closely packed nanograins with clear grain boundaries, and no large voids or pinholes are visible at this scale. The scale bar indicates that all highlighted features are on the order of a few to tens of nanometers.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The absence of large voids or cracks indicates that the film is continuous across the imaged area. Even though nanoscale contrast variations exist, the overall microstructure remains dense and interconnected, which is important for maintaining mechanical integrity and consistent functional properties.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"No. Their size is comparable to individual grains or small grain clusters.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Local differences in nucleation during early growth\\nSlight variations in surface diffusion length\\nPlasma-induced non-uniformities at the nanoscale\\nMinor stoichiometric fluctuations across grains\\nGrain coalescence effects during film thickening\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"}]}]","bbox":[{"panel_id":"a","x":11,"y":13,"width":427,"height":423}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_c.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":442,"height":439,"image_format":"jpeg","image_sha256":"18366dfcfd6dd1c4be1b5858155f18ce021cd7d99cc6eb8892a25308bd23c78f","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_d.jpg","caption":"(d)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_d","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_d","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of a multilayer thin-film stack on a silicon wafer. A thin SiOx layer separates the Si substrate from a thicker NiO film, which is capped by a thin carbon layer. The NiO layer exhibits vertical contrast variations, suggesting a textured or columnar microstructure, while both interfaces appear well defined. The thickness of the NiO film is on the order of several tens of nanometers, consistent with controlled thin-film deposition.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SiOx layer acts as a buffer between the silicon substrate and the NiO film. It helps prevent interdiffusion or unwanted reactions and provides a more stable surface for NiO nucleation, which can improve film uniformity.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The NiO layer is much thicker than the carbon overlayer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The non-uniform vertical contrast suggests that the NiO film may be columnar or textured rather than fully amorphous. Such microstructure can influence electrical conductivity, diffusion pathways, and film density.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Cross-sectional imaging allows direct verification of layer thickness, continuity, and interface quality. This information is critical for confirming that the deposition process produces films with the intended structure and performance characteristics.\"}]}]","bbox":[{"panel_id":"a","x":11,"y":9,"width":429,"height":431}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_d.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":447,"height":445,"image_format":"jpeg","image_sha256":"a46d590ee06922de8364b160b7d5345dda068caaef83ad35cd39a21ca9c2de28","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_e.jpg","caption":"(e)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_e","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_e","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of a multilayer thin-film stack deposited on a silicon wafer. From bottom to top, the stack consists of a Si substrate, a thin SiOₓ interfacial layer, a thicker NiO film, and a thin carbon overlayer. The layer interfaces are clearly distinguishable, indicating well-defined stacking. The NiO layer exhibits internal contrast variations across its thickness, suggesting microstructural inhomogeneity, although no specific grain morphology can be conclusively identified from this image alone.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The SiOx layer acts as an interfacial buffer between the silicon substrate and the NiO film. It can influence nucleation behavior, helping the NiO grow more uniformly and preventing direct reactions between NiO and the Si substrate during deposition.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The NiO layer is significantly thicker than the carbon overlayer.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The vertical contrast variations suggest that the NiO film may have a columnar or textured microstructure rather than being fully amorphous. This kind of structure can affect properties such as density, conductivity, and diffusion behavior.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Layer thickness and interface quality directly affect electrical, optical, and chemical performance. Non-uniform films or poorly defined interfaces can lead to device failure or inconsistent behavior, so cross-sectional imaging is essential for validating the deposition process.\"}]}]","bbox":[{"panel_id":"a","x":8,"y":10,"width":431,"height":429}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_e.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_e.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":441,"height":442,"image_format":"jpeg","image_sha256":"8815459f8d292f5de4a4994ee2427a7cadea005eeb9398a7eac2441ce192e54d","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG5_f.jpg","caption":"(f) FIG. 5. Top-view (top) HAADF scanning TEM images of (a) NiO $_{\\text{Alanis}}$  ( $\\sim11 \\, \\text{nm}$ ), (b) NiO $_{\\text{MeCp}}$  ( $\\sim9 \\, \\text{nm}$ ), and (c) NiO $_{\\text{Bu-MeAMD}}$  films ( $\\sim8 \\, \\text{nm}$ ). Some of the areas with a lower film thickness in the NiO $_{\\text{Bu-MeAMD}}$  films are marked by circles. Cross-sectional BF STEM images of (d) NiO $_{\\text{Alanis}}$ , (e) NiO $_{\\text{MeCp}}$ , and (f) NiO $_{\\text{Bu-MeAMD}}$  films, respectively.","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG5_f","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG5_f","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image shows a cross-sectional view of a NiO thin film deposited on a Si wafer with a thin SiOx interlayer and a carbon overlayer. Within the NiO layer, short grains are clearly visible near the NiO/SiOx interface, as indicated by arrows. These grains exhibit limited vertical growth compared to typical columnar structures, suggesting restricted grain growth during the early stages of film formation. The interfaces between layers remain sharp and well defined.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The short grains are most likely formed during the initial nucleation stage near the NiO/SiOx interface. Limited surface diffusion or rapid nucleation can produce many small grains that do not fully coalesce into long columnar structures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"They are shorter and less vertically extended than grains in the upper portion of the film.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Short grains increase the density of grain boundaries near the interface, which can influence charge transport, diffusion, and mechanical adhesion. This region may exhibit higher resistivity or act as a barrier layer compared to regions with longer grains.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Short-grain regions can dominate interface behavior, which is critical for devices relying on charge injection or transport across interfaces. Understanding and controlling grain length helps tailor film performance and reliability.\"}]}]","bbox":[{"panel_id":"a","x":12,"y":14,"width":427,"height":425}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG5_f.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":445,"height":442,"image_format":"jpeg","image_sha256":"1e3774af8176cc4612c98930348ea6a91de4f6d924d93a48ee7b12fedc11cea0","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f.jpg","caption":"","id":"validation/atomic-layer-etching/simulation-usecase/30/18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f","sample_id":"atomic-layer-etching/simulation-usecase/30/18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"},{"panel_id":"b","label":"reaction scheme"},{"panel_id":"c","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":9,"y":7,"width":141,"height":349},{"panel_id":"b","x":154,"y":6,"width":372,"height":354},{"panel_id":"c","x":527,"y":5,"width":146,"height":352}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/18a67104683988db8761e08dccfbb99f0152c8e7bd47bc3608045d11173d817f.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"not_found"},"width":675,"height":358,"image_format":"jpeg","image_sha256":"9bf36f2548c95ac2059fa3607cacf16ac802be7b6a0a0d9a9a56c6110f4a04bb","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_30_figure_9.jpg","caption":"Figure 9. Cross-sectional BE-TEM images of (a) unetched  $57.5 \\mathrm{nm}$  (includes  $1.5 \\mathrm{nm}$  native silicon oxide)  $\\mathrm{Al}_2\\mathrm{O}_3$  after exposing to 150 cycles of each  $3 \\mathrm{s}$  long  $\\mathrm{CCl}_4$  pulses and (b) after etching about  $18 \\mathrm{nm} \\mathrm{Al}_2\\mathrm{O}_3$  film by 150 cycles of the  $\\mathrm{NbF}_5 + \\mathrm{CCl}_4$  ALEt process. Initially, about  $56 \\mathrm{nm} \\mathrm{Al}_2\\mathrm{O}_3$  was measured by SE (TEM not taken). The  $\\mathrm{NbF}_5$  and  $\\mathrm{CCl}_4$  pulse times were 3 and  $0.5 \\mathrm{s}$ , respectively. For both experiments, an etch temperature of  $460^{\\circ}\\mathrm{C}$  was used.","id":"validation/atomic-layer-etching/simulation-usecase/30/figure_9","sample_id":"atomic-layer-etching/simulation-usecase/30/figure_9","subset":"image-panel","split":"validation","classification":[{"panel_id":"a","label":"image panel"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":5,"y":6,"width":443,"height":441},{"panel_id":"b","x":448,"y":5,"width":437,"height":440}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/images/figure_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/30/Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"30","first_classification_panel_id":"a","first_classification_label":"image panel","caption_source":"content.json:image_caption"},"width":892,"height":444,"image_format":"jpeg","image_sha256":"c3816c12a75854a290b5cf47b78f8e456e4a15ccf44da9287bd7b9ba336acf73","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}