{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_1.jpg","caption":"FIG. 1. (Color online) Schematic diagram of thin film deposition. One deposition cycle consisted of four pulses:  $\\mathrm{[(CH_3)_2GaNH_2]_3}$  vapor pulse with 100 SccM Ar carrier gas for  $0.1\\mathrm{s}$  an Ar purge gas pulse for  $2\\mathrm{s}$  an  $\\mathrm{O}_2$  plasma gas pulse for  $1\\mathrm{s}$  and an Ar purge gas pulse for  $0.4\\mathrm{s}$  The period cycle was repeated until the desired thickness was obtained.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_1","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_1","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The schematic represents the thin film deposition process over time. One deposition cycle consisted of four pulses [(CH3)2GaNH2]3 vapor pulse with 100-SCCM Ar carrier gas for 0.1 s, an Ar purge gas pulse for 2 s, an O2 plasma gas pulse for 1 s, and an Ar purge gas pulse for 0.4 s.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Time segment | Ga source | Ar purge (1) | O₂ plasma | Ar purge (2) |\\n|-------------|-----------|--------------|-----------|--------------|\\n| t₁          | ON        | OFF          | OFF       | OFF          |\\n| t₂          | OFF       | ON           | OFF       | OFF          |\\n| t₃          | OFF       | OFF          | ON        | OFF          |\\n| t₄          | OFF       | ON           | OFF       | OFF          |\\n| t₅          | ON        | OFF          | OFF       | OFF          |\\n| t₆          | OFF       | ON           | OFF       | OFF          |\\n| t₇          | OFF       | OFF          | ON        | OFF          |\\n| t₈          | OFF       | ON           | OFF       | OFF          |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"1) Metal precursor pulse 0.1 s - [(CH₃)₂GaNH₂]₃ vapor in Ar. → 2) Purge 2.0 s - Ar purge.→ 3) 1.0 s - O₂ plasma pulse → 4) 0.4 s - Ar purge.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thermal ALD: Uses a thermal oxidant (O₃) in step 3 to form the metal-oxide layer. PE-ALD: Uses a plasma oxidant (O₂ plasma) in step 3 to form the metal-oxide layer. Both cycles retain the same fundamental sequence of precursor pulse, purge, reactant pulse, and purge.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The film shifts from being formed via a slower, thermally activated oxidation reaction to a more energetic, plasma-activated process. This introduces highly reactive oxygen radicals (O⁺) that create a denser Ga–O network with fewer carbon/hydrogen impurities from incomplete ligand removal. The result is a film with superior stoichiometry, higher density, and potentially a different defect profile compared to thermal ALD.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"To achieve a higher-quality, denser Ga₂O₃ dielectric at a lower substrate temperature. The O₂ plasma provides more aggressive oxidation, leading to films with:\\nLower impurity content (reduced C/H).\\n\\nHigher dielectric breakdown strength.\\n\\nBetter performance in high-field, high-temperature device operation.\"}]}]","bbox":[{"panel_id":"a","x":4,"y":3,"width":471,"height":313}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":478,"height":319,"image_format":"jpeg","image_sha256":"6d0b2b61596cbfe69f48b808e3768d1b464d83262209236e5757ebfe0af13d45","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG1.jpg","caption":"FIG. 1. Schematic of the standard recipe of one cycle of the PA-ALD process of NiO $_{\\text{Alanis}}$  at  $150^{\\circ}\\text{C}$ .","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG1","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG1","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows one complete NiO ALD cycle represented as a time-sequenced process timing diagram. The Alanis precursor is pulsed briefly at the beginning of the cycle, followed by a purge to remove excess precursor and reaction by-products. An O₂ plasma step is then applied for a longer duration to oxidize the surface-bound species and form NiO. A final purge clears remaining reactive species before the next cycle begins. The diagram emphasizes the strictly sequential, non-overlapping nature of the ALD steps.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The timing diagram shows that the Alanis pulse precedes the O₂ plasma step, indicating a sequential process. This ordering ensures that the precursor exposure occurs first, followed by a separate plasma step rather than overlapping signals. The clear separation visible in the figure suggests that the two steps are intentionally isolated within the cycle.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Separates the Alanis pulse from the O₂ plasma step\\n-Removes residual precursor signal before plasma activation\\n-Ensures non-overlapping process steps within the cycle\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The timing diagram shows that the O₂ plasma step spans a much longer time interval than the Alanis pulse. This indicates that the plasma exposure is designed to occupy a larger fraction of the cycle. In contrast, the precursor pulse is brief and confined to the early part of the sequence.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The diagram shows that each step occurs in a fixed order without temporal overlap. This consistent sequencing suggests that the same surface state is re-established at the start of each cycle. Such repeatable timing is consistent with controlled and reproducible ALD operation as implied by the diagram structure.\"}]}]","bbox":[{"panel_id":"a","x":9,"y":10,"width":667,"height":468}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:image_caption"},"width":678,"height":477,"image_format":"jpeg","image_sha256":"eeb61d9d9f85262d72b0888d3f0e451fe2e9e473194956eab4c571fa59de96ce","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_10_fig4.jpg","caption":"Fig.4 Schatic f th A process us in this work. Half-cycle A consts of Hfac dose/old steps, which are reeated 15 times per cycle (unles stated otherwise). Half-cycle B is the  $\\mathsf{H}_{2}$  plasma at a pressure of 300 mTorr and 600 W power. Each half-cycle is followed by a 10 s Ar purge with the APC fully open for maximum pumping efficiency.","id":"validation/atomic-layer-etching/experimental-usecase/10/fig4","sample_id":"atomic-layer-etching/experimental-usecase/10/fig4","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":0,"y":0,"width":1123,"height":453}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/images/fig4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/10/Investigation of the atomic layer etching mechanism for Al2O3.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"10","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":1123,"height":453,"image_format":"jpeg","image_sha256":"bfc931e0010a5d40bd97cb12ac65090e9eb9ecdfcce65132b2de42bc2af56595","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_10.jpg","caption":"FIG. 10. Comparison of etching with (a) continuous and simultaneous delivery of plasma species, (b) pulsed substrate bias pulsing to modulate ion energy, while keeping neutral delivery is fixed, and (c) ALE with fully separation of neutrals and ions, using gas cycling to also modulate the plasma neutrals. In this schematic, neutrals represent reaction A and ion energy represents reaction B.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_10","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_10","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"},{"panel_id":"c","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":2,"y":548,"width":469,"height":282},{"panel_id":"b","x":2,"y":221,"width":465,"height":303},{"panel_id":"a","x":5,"y":0,"width":460,"height":213}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":470,"height":834,"image_format":"jpeg","image_sha256":"215874b2aa8dc2201a5f14346f2981c95557c56da3726c2715f40ac628733741","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_15_fig_4.jpg","caption":"FiG. 4. Total amount of material removed in three sequential ALE cycles:  $\\mathrm{A}\\rightarrow \\mathrm{B}\\rightarrow \\mathrm{A}\\rightarrow \\mathrm{B}\\rightarrow \\mathrm{A}\\rightarrow \\mathrm{B}$  The amount of material etched per cycle is EPC. Ideally, removal only occurs during reaction B and is selflimiting. The time needed to switch between reactions is indicated by gray zones.","id":"validation/atomic-layer-etching/experimental-usecase/15/fig_4","sample_id":"atomic-layer-etching/experimental-usecase/15/fig_4","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":2,"y":0,"width":550,"height":433}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/15/Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"15","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":555,"height":433,"image_format":"jpeg","image_sha256":"f8b31b6c272bb99b59aa80e11d04e382fa8abbe3f0980ea7696214179baa2069","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_1.jpg","caption":"Figure 1. (a) The process steps in the ALE cycle for InGaAs etching. (b) Schematic diagram of ICP ion beam source with three-grid assembly used to etch InGaAs by ALE.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_1","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_1","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"apparatus diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"b","x":1,"y":452,"width":632,"height":615},{"panel_id":"a","x":4,"y":2,"width":637,"height":445}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_1.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_1.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":639,"height":1073,"image_format":"jpeg","image_sha256":"625f966b76cbd3cb6619fd648d7aeae3a265207063cfe7ca7d66173cef01958e","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_10.jpg","caption":"FIG. 10. Comparison of etching with (a) continuous and simultaneous delivery of plasma species, (b) pulsed substrate bias pulsing to modulate ion energy, while keeping neutral delivery is fixed, and (c) ALE with fully separation of neutrals and ions, using gas cycling to also modulate the plasma neutrals. In this schematic, neutrals represent reaction A and ion energy represents reaction B.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_10","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_10","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"},{"panel_id":"b","label":"process timing diagram"},{"panel_id":"c","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"c","x":1,"y":546,"width":462,"height":282},{"panel_id":"b","x":6,"y":219,"width":459,"height":316},{"panel_id":"a","x":1,"y":1,"width":461,"height":203}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_10.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_10.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":470,"height":834,"image_format":"jpeg","image_sha256":"215874b2aa8dc2201a5f14346f2981c95557c56da3726c2715f40ac628733741","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-etching_simulation-usecase_22_fig_4.jpg","caption":"FiG. 4. Total amount of material removed in three sequential ALE cycles:  $\\mathrm{A}\\rightarrow \\mathrm{B}\\rightarrow \\mathrm{A}\\rightarrow \\mathrm{B}\\rightarrow \\mathrm{A}\\rightarrow \\mathrm{B}$  The amount of material etched per cycle is EPC. Ideally, removal only occurs during reaction B and is selflimiting. The time needed to switch between reactions is indicated by gray zones.","id":"validation/atomic-layer-etching/simulation-usecase/22/fig_4","sample_id":"atomic-layer-etching/simulation-usecase/22/fig_4","subset":"process-timing-diagram","split":"validation","classification":[{"panel_id":"a","label":"process timing diagram"}],"summarization":"[]","data_extraction":"[]","vqa":"[]","bbox":[{"panel_id":"a","x":3,"y":3,"width":551,"height":428}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/images/fig_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/simulation-usecase/22/Review Paper -- Overview of atomic layer etching in the semiconductor industry.pdf"],"main_category":"atomic-layer-etching","sub_category":"simulation-usecase","paper_id":"22","first_classification_panel_id":"a","first_classification_label":"process timing diagram","caption_source":"content.json:img_caption"},"width":555,"height":433,"image_format":"jpeg","image_sha256":"f8b31b6c272bb99b59aa80e11d04e382fa8abbe3f0980ea7696214179baa2069","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}