{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_11_fig_2.jpg","caption":"Fig. 2. Linear relation of thickness and number of deposition cycles.","id":"validation/atomic-layer-deposition/experimental-usecase/11/fig_2","sample_id":"atomic-layer-deposition/experimental-usecase/11/fig_2","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure presents a scatter plot demonstrating that the film thickness increases linearly with the number of ALD deposition cycles. The proportional relationship indicates a constant growth-per-cycle (GPC), confirming stable, self-limiting ALD behavior for the WNₓCᵧ process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Deposition cycles|Thickness (Å)|\\n|------------------|-------------|\\n|~70|~50|\\n|~120|~75|\\n|~200|~150|\\n|~300|~240–250|\\n|~400|~330|\"}]","vqa":"[{\"panel_id\":\"d\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A linear relationship between thickness and cycle count demonstrates a stable and predictable ALD growth process. This stability is essential for precisely controlling barrier thickness, ensuring uniform coverage over complex structures, and achieving reliable electrical and physical properties in semiconductor devices. Consistent GPC also supports reproducibility across wafers and process conditions, which is critical for integrating WNₓCᵧ into advanced interconnect technologies.\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Thickness increases from about 50–75 Å at lower cycles (~70–120 cycles) to around 250–330 Å at higher cycles (300–400 cycles).\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"Constant growth-per-cycle (GPC), Self-limiting surface reactions, Uniform film nucleation, Stable ALD process window\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":545,"height":339}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_2.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/images/fig_2.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/11/K.-E. Elers et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"11","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":545,"height":339,"image_format":"jpeg","image_sha256":"a3d8028361cdcc5604f39e2f440aabe2bd29f1c7d812d20e93d297eace621add","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_17_fig_7.jpg","caption":"FIG. 7. (Color online) Dielectric constants of the as-deposited  $\\mathrm{Ga}_2\\mathrm{O}_3$  thin film and of those annealed at various RTA temperatures.","id":"validation/atomic-layer-deposition/experimental-usecase/17/fig_7","sample_id":"atomic-layer-deposition/experimental-usecase/17/fig_7","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The graph represents the variation of dielectric constants of the Ga₂O₃ thin films annealed at various temperatures. As temperature increases the dielectric constant decreases clearly.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Temperature (°C) | Dielectric Constant |\\n|-----------------|---------------------|\\n| 200             | 13                  |\\n| 500             | 10.5              |\\n| 700             | 9                   |\\n| 900             | 9.3                  |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"With increasing annealing temperature, the dielectric constant of the thin film decreased from 13 to 9.  This is mainly due to the grain size variation due to annealing and relieving of strain during the annealing process.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During low temperature annealing the dielectric constant was high, where as at higher temperatures the dielectric constant decreased.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Yes, the change in dielectric constant with annealing temperature can significantly affect the capacitance, leakage behavior, and overall reliability of Ga₂O₃-based capacitors and MOS devices.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":474,"height":371}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_7.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/images/fig_7.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/17/F. K. Shan et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"17","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":478,"height":375,"image_format":"jpeg","image_sha256":"243d0de88432842bcb609c05a0e24a4f6d69f754c74121e2bca853b81efe21f5","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_47_fig_3.jpg","caption":"Fig. 3. ALD growth parameters for  $\\mathrm{Al(DEA)}_3$ . Precursor purge time (A), substrate temperature (B), and growth rate versus the number of cycles with linear fit (C).","id":"validation/atomic-layer-deposition/experimental-usecase/47/fig_3","sample_id":"atomic-layer-deposition/experimental-usecase/47/fig_3","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"},{"panel_id":"c","label":"line chart"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The figure shows the relationship between deposition rate and precursor purge time. As the precursor purge time increases, the deposition rate decreases slightly.\"},{\"panel_id\":\"b\",\"text\":\"The figure shows the relationship between and reactor temperature. As the reactor temperature increases, so does the deposition rate.\"},{\"panel_id\":\"c\",\"text\":\"The figure shows the relationship between the thickness and number of cycles. As the number of cycles increases, so does the thickness.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Prec. Purge (sec) | Dep. Rate (Å/cycle) |\\n|------------------|--------------------|\\n| 0                | ~1                 |\\n| 10               | ~0.87              |\\n| 20               | ~0.89              |\\n| 30               | ~0.82              |\\n| 40               | ~0.80              |\\n| 60               | ~0.79              |\"},{\"panel_id\":\"b\",\"text\":\"| Reactor Temperature (°C) | Dep. Rate (Å/cycle) |\\n|---------------------------|---------------------|\\n| 200                       |           -         |\\n| 250                       | ~0.85               |\\n| 300                       | ~0.88               |\\n| 350                       | ~1.1                |\\n| 400                       | ~1.6                |\"},{\"panel_id\":\"c\",\"text\":\"| Number of Cycles | Thickness (Ång) |\\n|-------------------|-----------------|\\n| 75                |      -          |\\n| 125               | ~135            |\\n| 175               | ~150            |\\n| 225               |    -            |\\n| 275               |    -            |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, because it shows an increase in film thickness. Also, it is possible to observe the self-limiting behavior of an ALD process.\"}]},{\"panel_id\":\"c\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Al(DIA)3 is analyzed in all the subfigures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The film's thickness increases with the number of cycles, which corresponds with an atomic layer deposition process.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Approximately 210 Ang at 250 cycles.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":2,"width":637,"height":333},{"panel_id":"b","x":7,"y":334,"width":645,"height":338},{"panel_id":"c","x":18,"y":668,"width":618,"height":366}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/images/fig_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/47/Wade et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"47","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":647,"height":1033,"image_format":"jpeg","image_sha256":"ae5adddfe7b926406f651344f5748741239275816c68b09126c71cffb7f0e3f7","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG2_a.jpg","caption":"(a)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG2_a","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG2_a","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows growth per cycle as a function of cumulative precursor dose. Growth increases rapidly at low doses and then gradually approaches a plateau near ~0.3 Å per cycle, indicating saturation behavior. The dashed horizontal line marks the saturated growth value, while the dashed vertical line indicates the dose at which near-saturation is achieved. Error bars highlight experimental uncertainty, and the fitted curve emphasizes the self-limiting nature of the deposition process.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Cumulative precursor dose (s) | Growth per cycle (Å) |\\n|-------------------------------|----------------------|\\n| 0.0                           | 0.00                 |\\n| 0.2                           | 0.15                 |\\n| 0.4                           | 0.24                 |\\n| 0.6                           | 0.27                 |\\n| 0.8                           | 0.25                 |\\n| 1.0                           | 0.28                 |\\n| 1.2                           | 0.30                 |\\n| 1.4                           | 0.31                 |\\n| 1.6                           | 0.32                 |\\n| 1.8                           | 0.33                 |\\n| 2.0                           | 0.34                 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"-Rapid rise in growth at low dose\\n-Clear plateau near ~0.3 Å per cycle\\n-Presence of a horizontal dashed saturation line\\n-Minimal change beyond the vertical dashed marker\\n-Overlapping error bars in the high-dose region\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Around ~1.0 s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Beyond saturation, longer dosing increases process time and precursor consumption without improving growth. This reduces throughput and efficiency without providing additional film quality benefits.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":657,"height":544}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_a.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_a.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":664,"height":550,"image_format":"jpeg","image_sha256":"ac6474b019f0125a632ef89d37e1668c5589833654103463b8e2dd9aa4537174","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG2_b.jpg","caption":"(b)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG2_b","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG2_b","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows growth per cycle as a function of precursor purge time. Growth varies slightly at very short purge times but rapidly stabilizes. Beyond approximately 2 s of purge, the growth per cycle remains constant at ~0.28 Å within experimental uncertainty. Increasing the purge time further does not affect growth, indicating complete removal of excess precursor and self-limiting ALD behavior.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Precursor purge (s) | Growth per cycle (Å) | \\n|--------------------------|----------------------------|\\n| ~0.5 | ~0.27 |  \\n| ~1.0 | ~0.29 |   \\n| ~2.0 | ~0.28 | \\n| ~3.0 | ~0.27 | \\n| ~5.0 | ~0.28 | \\n| ~14–15 | ~0.27 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Once all excess precursors and by-products are removed from the chamber, extending the purge no longer affects the surface chemistry. The surface reactions are already complete, so the growth per cycle becomes independent of purge duration.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth per cycle is slightly lower at very short purge times and stabilizes at longer purge times.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A constant growth per cycle indicates that the surface reactions are self-limiting and reach full saturation each cycle. This suggests that precursor adsorption and reaction are confined to available surface sites rather than continuing uncontrollably.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using a purge time longer than necessary reduces throughput without improving film quality. Identifying the shortest purge that still gives saturated growth helps optimize cycle time while maintaining reliable and reproducible deposition.\"}]}]","bbox":[{"panel_id":"a","x":2,"y":7,"width":658,"height":534}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_b.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_b.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":664,"height":542,"image_format":"jpeg","image_sha256":"edcd58b6b73572eaaf4478bf94841268f74bd5b4840b74b49c8bf581af50aaad","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG2_c.jpg","caption":"(c)","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG2_c","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG2_c","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"This figure shows the dependence of growth per cycle on oxygen plasma exposure time. Growth increases sharply upon introducing the plasma and reaches a saturation plateau near ~0.3 Å per cycle within ~1–2 s. Further increases in plasma exposure do not enhance growth and instead lead to a slight decrease at the longest exposure. The dashed lines mark the approximate saturation level and the plasma time required to reach it, indicating a narrow optimal process window.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxygen plasma exposure (s) | Growth per cycle (Å) |\\n|----------------------------|----------------------|\\n| 0                          | 0.00                 |\\n| 0.5                        | 0.28                 |\\n| 1.0                        | 0.30                 |\\n| 2.0                        | 0.32                 |\\n| 4.0                        | 0.30                 |\\n| 5.0                        | 0.28                 |\\n| 10.0                       | 0.26                 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At very short plasma times, the surface still contains unreacted precursor fragments, so plasma exposure rapidly completes the oxidation step. Once those surface reactions are finished, additional plasma does not create new reactive sites, and the process becomes self-limiting, causing growth to plateau.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"At long plasma exposure, the growth per cycle is slightly lower than in the saturated region. This suggests diminishing returns and possibly mild surface modification or densification, whereas the 1–2 s region represents stable self-limiting growth.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Longer plasma exposures increase process time and energy use without improving growth. They can also introduce unwanted effects such as surface damage or slight material removal. Operating near the saturation point gives the same growth efficiency while keeping the process faster and more stable.\"}]}]","bbox":[{"panel_id":"a","x":3,"y":3,"width":663,"height":540}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_c.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_c.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":670,"height":541,"image_format":"jpeg","image_sha256":"3d0ce8e3010850bd777b9b05b8a7401064dedf89013acdd5a336c4a3421e59ed","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_experimental-usecase_68_FIG2_d.jpg","caption":"(d) FIG. 2. Saturation curves: GPC as a function of (a) precursor  $(\\mathrm{Alanis}^{\\mathrm{TM}})$  dosing, (b) precursor  $(\\mathrm{Alanis}^{\\mathrm{TM}})$  purge, (c) oxygen plasma exposure, and (d) oxygen plasma purge at a deposition temperature of  $150^{\\circ}\\mathrm{C}$ . The solid lines through the data points in (a) and (c) are Langmuir isotherm fits. The determined saturation GPC value is indicated by the dotted black line.","id":"validation/atomic-layer-deposition/experimental-usecase/68/FIG2_d","sample_id":"atomic-layer-deposition/experimental-usecase/68/FIG2_d","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The plot shows growth per cycle as a function of oxygen plasma purge time. Growth values cluster around ~0.29 Å/cycle across the entire purge range. A vertical marker at about 2 seconds indicates the minimum purge time needed to reach saturation. Beyond this point, increasing the oxygen plasma purge does not change the growth per cycle, confirming that the process is self-limiting and fully purged.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Oxygen plasma purge (s) | Growth per cycle (Å) |\\n|---|---|\\n| 0 | 0.28 ± 0.02 |\\n| 1 | 0.29 ± 0.02 |\\n| 2 | 0.27 ± 0.02 |\\n| 5 | 0.29 ± 0.02 |\\n| 8 | 0.26 ± 0.02 |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Once residual reactants and by-products are removed from the chamber, the surface reactions are already complete. Additional plasma purge time does not change the surface chemistry, so the growth per cycle remains constant.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Growth per cycle is essentially the same within error across all purge times.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"A stable growth per cycle indicates that surface reactions reach saturation each cycle and are not limited by incomplete oxidation or residual species. This suggests uniform and reproducible surface chemistry.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Using a purge time longer than necessary increases cycle time without improving film quality. Identifying the shortest purge that achieves saturation allows faster processing while maintaining consistent growth.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":702,"height":537}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_d.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/images/FIG2_d.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/experimental-usecase/68/Kousumi Mukherjee et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"experimental-usecase","paper_id":"68","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":703,"height":541,"image_format":"jpeg","image_sha256":"03ec36c307e4db0103e7f34ddf2938dc2aa46427eaff6cd1819817ac8b0aaabe","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_4.jpg","caption":"Figure 4. Calculated potential energy profiles for the dissociative chemisorption of DSBAS.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_4","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_4","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"A reaction scheme illustrating the energy changes along a reaction pathway.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Pathway | Energy (kcal/mol) |\\n|------------------|------------------|\\n| R(g)            | 0                |\\n| R               | -6.7             |\\n| TS              | -0.6             |\\n| P               | -15            |\\n| P(g)            |    -14.2          |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Surface reaction energy = -8.7 kcal/mol\\n2. Overall reaction energy = -14.6 kcal/mol\\n3. Activation barrier = Overall reaction energy - Surface reaction energy= 6.1 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Substantially higher barrier of 44.9  kcal/mol is due to the large separation between the two adjacent OH surface species and the requirement to transfer the H atom from the O2-type OH group to the O1 atom in the transitionstate structure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"All calculations were performed with the Vienna ab initio simulation package (VASP)\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":600,"height":314}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":600,"height":314,"image_format":"jpeg","image_sha256":"56e0f79dfce3dab7fc5b4cc3ab78ba930244a198f098cdcd3ab97335bde70b69","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-deposition_simulation-usecase_58_figure_9.jpg","caption":"Figure 9. Calculated energy diagram for the oxidation process of the  $-\\mathrm{SiH}_3$  species.","id":"validation/atomic-layer-deposition/simulation-usecase/58/figure_9","sample_id":"atomic-layer-deposition/simulation-usecase/58/figure_9","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The image relates the reaction pathway and energy in kcal involving ozone (O₃) and oxygen (O₂). It includes transition states (TS) and reaction steps (R) with corresponding energy values.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Reaction Pathway | Energy (kcal/mol) |\\n|------------------|------------------|\\n| 3O₃(g)          | 0                |\\n| R1              | - 1.1              |\\n| TS1             | 11.6             |\\n| P1/R1        | -111.6          |\\n| TS2              | -100             |\\n| P2/R3            | -221.6       |\\n| TS3              | -211.1         |\\n| P3              | -330.5            |\\n| 3O₂(g)          |   -314.2      |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The oxidation process is strongly exothermic with a thermochemical energy of 109.3 kcal/mol and a modest activation barrier of 12.7 kcal/mol\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Three oxidation steps are shown\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The ground electronic states of O3 and O2 are singlet and triplet, respectively. As the reaction proceeds, the ground state of the reactant (R1)\\nchanges from a singlet state to a triplet state of the product (P1). At the transition state, the O2 molecule is not fully formed as it still maintains a significantly elongated bond with the Oc atom and hence transition state remains singlet. Thus next oxidation step is the change of spin states from R2 to P2 via TS2. The ground electronic states of R3 and TS3 remain to be singlet, while the ground state of the final product P3 is triplet.\"}]}]","bbox":[{"panel_id":"a","x":0,"y":0,"width":606,"height":425}],"source":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_9.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/images/figure_9.json","source_content":"icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-deposition/simulation-usecase/58/Liang Huang et al.pdf"],"main_category":"atomic-layer-deposition","sub_category":"simulation-usecase","paper_id":"58","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:image_caption"},"width":606,"height":425,"image_format":"jpeg","image_sha256":"c04e8365138b6077a6d87c37e68009de629ced1fcf27bc49f6c46b9213b40458","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_24_figure_4.jpg","caption":"Figure 4. (a) Mass change after TMA exposure  $(\\Delta M_{\\mathrm{TMA}})$  versus TMA exposure time at  $300^{\\circ}C$  (b) Mass change after HF exposure  $(\\Delta M_{\\mathrm{HF}})$  versus HF exposure time at  $300^{\\circ}C$","id":"validation/atomic-layer-etching/experimental-usecase/24/figure_4","sample_id":"atomic-layer-etching/experimental-usecase/24/figure_4","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"ΔM_TMA versus TMA exposure time at 300°C. The mass loss increases with exposure time and approaches self-limiting behavior at approximately −29 ng/cm² after 2.0 s. The slow approach to saturation suggests that an initial fraction of the AlF₃ layer is easily removed, but complete removal becomes progressively more difficult.\"},{\"panel_id\":\"b\",\"text\":\"ΔM_HF versus HF exposure time at 300°C. The mass gain increases rapidly and saturates at ~13 ng/(cm² cycle) after about 1.0 s exposure. This sharp saturation indicates that HF fluorinates the Al₂O₃ surface to form a passivating AlF₃ layer that prevents further reaction.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| TMA exposure time (s) | ΔM_TMA (ng/cm²·cycle) |\\n| --------------------- | --------------------- |\\n|         0.0           |           ~0          |\\n|         0.5           |          ~-6          |\\n|         1.0           |         ~-10          |\\n|         1.5           |         ~-12          |\\n|         2.0           |         ~-14          |\\n|         2.5           |         ~-15          |\"},{\"panel_id\":\"b\",\"text\":\"| HF exposure time (s) | ΔM_HF (ng/cm²·cycle) |\\n| -------------------- | -------------------- |\\n|        0.0           |         ~0           |\\n|        0.5           |        ~10           |\\n|        1.0           |        ~14           |\\n|        1.5           |        ~15           |\\n|        2.0           |        ~16           |\"}]","vqa":"[{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"It is possible to determine the exposure times required to achieve the reaction's self-limiting behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change after TMA exposure decreases while TMA exposure increases.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.0 s of TMA exposure.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"This could be related to the difficulty of removing the AlF3 species from the surface.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The last two data points have the same value and overall the mass change seems to saturate towards this value, so yes.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, the trend is not linear.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The plateau indicates that the reaction between the TMA precursor and the surface has reached saturation. This means that after a certain exposure time (around 2 seconds), all available reactive sites on the surface have been consumed, and further exposure to TMA does not lead to any significant additional mass change. This self-limiting behavior is a hallmark of ALD and ALE half-cycles.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"The mass change increases rapidly from 0 to about +12 ng/(cm²·cycle) within the first 0.5 seconds of exposure.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Self-limiting reactions are essential because they ensure that each half-cycle removes or modifies only a defined amount of material, regardless of excess reactant exposure. This enables precise thickness control at the atomic scale and allows for conformal, isotropic etching of three-dimensional structures. Without self-limiting behavior, the etch rate would depend on exposure time and local reactant flux, making uniform etching impossible.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"HF saturates sharply after ~1.0 s, while TMA approaches saturation more slowly and gradually levels off after ~2.0 s.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The AlF₃ layer passivates the Al₂O₃ surface because it has a Pilling-Bedworth ratio (R_PB) greater than 1, specifically ~1.8. This means the AlF₃ layer occupies more volume than the Al₂O₃ it replaces, ensuring complete surface coverage without gaps. Once formed, this continuous fluoride layer prevents HF from accessing the underlying oxide, analogous to how native oxide layers protect metals from further oxidation.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"2.0 s for TMA and 1.0 s for HF, corresponding to the \\\"2-30-1-30\\\" reaction sequence.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"1. Run multiple ALE cycles at a fixed temperature (300°C) and HF exposure time.\\n\\n2. For each set of cycles, use a different, precisely controlled TMA exposure time (e.g., 0.5 s, 1.0 s, 1.5 s, 2.0 s).\\n\\n3. Measure the mass change per cycle (ΔM) for each TMA time using QCM.\\n\\n4. Plot ΔM(TMA) vs. TMA Exposure Time to identify the saturation point.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The shorter, non-saturating time (0.5 s) is better for minimizing cycle time. The trade-off is a lower etch per cycle and potentially incomplete surface reactions, which could lead to non-uniform etching, residue accumulation, and poor process control over many cycles compared to the stable, saturated regime.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Increasing TMA exposure time initially makes the etch more complete, removing more of the fluorinated layer per cycle, as shown by the increasingly negative ΔM(TMA). Saturation occurs because the reaction is self-limiting; once all the AlF₃ sites formed during the prior HF step have reacted, additional TMA cannot further increase the etch amount, leading to a constant ΔM.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Self-limiting behavior at ΔMTMA = −29 ng/cm2 is  observed after 2.0 s of TMA exposure. This slow approach to self-limiting behavior may result from the difficulty in removing all of the AlF3 surface layer. An initial fraction of the AlF3 surface layer may be easily removed by TMA. The removal of more of the AlF3 surface layer may then become progressively difficult.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"According to the authors, 13 ng/cm^2.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"According to the authors, -29 ng/cm^2.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For both experiments, the temperature was kept at 300 °C and the ALE cycle always consisted of TMA exposure, purge, HF exposure and purge. For the experiments, the times of these individual steps can be represented as follows:\\n1) x - 30 - 1 - 30\\n2) 2 - 30 - x - 30\\nWhere x denotes the variable time.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"During TMA exposure, the initial layer of AlF3 is removed readily, but this gets progressively difficult as AlF3 disappears. The authors state that temperature plays a role here, which was also investigated. They already reveal that this AlF3 layer is not entirely removed, even at the highest temperatures. During HF exposure, something similar occurs where the initial AlF3 layer is quickly formed, but after a certain point, the formed AlF3 layer passivates the reaction between Al2O3 and HF.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The TMA half-cycle appears more kinetically limited because ΔM<sub>TMA</sub> approaches its plateau much more slowly than ΔM<sub>HF</sub. HF levels off by about 1s, while TMA needs ~2s to level off. Longer time-to-saturation and gradual flattering indicates that the TMA step is slower to complete under the same conditions.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"300 °C\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"ΔM_TMA becomes more negative as exposure time increases, while ΔM_HF becomes more positive. Both curves rise rapidly at short times and then begin to plateau. The opposing signs reflect the different chemical processes occurring during TMA and HF exposures.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ΔMTMA decreases with TMA exposure time, while ΔMHF increases with HF exposure time.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"ΔMTMA plateau → AlF₃ removal reaches limit, ΔMHF plateau → AlF₃ formation completes, Ensures controlled layer-by-layer etching\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Monitoring mass change versus exposure time allows determination of the exposure duration needed to reach self-limiting behavior. This ensures that each ALE cycle fully reacts without wasting precursor or risking over-etching. It is critical for process optimization, reproducibility, and achieving precise, conformal etching of Al₂O₃ films.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"Yes\"}]},{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The optimal HF exposure time is 1.5 s. At this time the mass change saturates, and is, in that saturated regime the lowest value that can be taken.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"No, with just the mass change the film composition cannot be determined. As with just this information it can not be determined which specific atoms are removed.\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Because the mass change reaches a plateau, indicating that additional HF exposure does not produce further measurable mass change under these conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The HF step appears to reach saturation faster, leveling off after about 1.0 second. In contrast, the TMA step in panel (a) requires closer to 2.0 seconds to fully saturate. This suggests the HF half-reaction kinetics may be faster under these conditions.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"If the curve never plateaued, it would imply a continuous (CVD-like) etch, where the etchant spontaneously consumes the material as long as it is present. This would be fatal for precision because the etch depth would depend entirely on timing (analog control). A 10% error in pulse time would mean a 10% error in depth. The plateau seen here proves the mechanism is self-limiting (digital control), which is the defining requirement for atomic precision.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"ΔMHF versus the HF exposure time increases and  then levels off at approximately ΔMHF = 13 ng/(cm2 cycle) after a 1.0 s HF exposure\"},{\"question_type\":\"Structure-Property\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF fluorinating the Al2O3 film and forming an AlF3 surface layer that passivates the underlying Al2O3 film by protecting it from further oxidation\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"HF fluorinates the surface, converting part of the oxide into an AlF₃ surface layer.  The reaction is Al₂O₃ + 6HF → 2AlF₃ + 3H₂O, meaning that Al2O3 is converted into two AlF3.  Since 2AlF3 have a mass of 168 amu, while Al2O3 is 102 amu, the mass increases during the HF exposure.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Self-limiting behavior.\"},{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"After 1s.\"},{\"question_type\":\"Application/Performance\",\"questions\":\"\",\"answer_type\":\"List\",\"answer\":\"~0.0, 0.5, 1.0, 1.5,  2.0 seconds.\"}]}]","bbox":[{"panel_id":"a","x":1,"y":6,"width":670,"height":368},{"panel_id":"b","x":0,"y":381,"width":672,"height":388}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_4.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/images/figure_4.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/24/Trimethylaluminum as the Metal Precursor for the Atomic LayerEtching.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"24","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":675,"height":769,"image_format":"jpeg","image_sha256":"8d1df113e2fe7a76dbf7a07895ccdbc3e33afdfa5172e31a04302449aaafbba0","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_3.jpg","caption":"Figure 3. InGaAs etch depth measured as a function of (a) first grid voltage (acceleration grid voltage) of the ICP ion gun for chlorine species (ions/radicals) exposure time of  $15\\mathrm{min}$  and (b) the chlorine adsorption time for the first grid voltages of  $+10$  and  $+15\\mathrm{V}$  during the chlorine adsorption step. The other conditions are the same as those in figure 2.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_3","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_3","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch depth increases linearly with the acceleration grid voltage, after a threshold voltage has been reached.\"},{\"panel_id\":\"b\",\"text\":\"The etch depth increases with CI species exposure time at both 15V and 10V acceleration voltages.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Acceleration Grid Voltage (V) | Etch Depth (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 5 | 0 |\\n| 10 | 0 |\\n| 15 | 40 |\\n| 20 | 70 |\\n| 30 | 150 |\"},{\"panel_id\":\"b\",\"text\":\"| CI Species Exposure Time (min) | Etch Depth (Å) 15 V |Etch Depth (Å) 10 V |\\n|---|---|---|\\n| 0 | 0 |0|\\n| 5 | 0 |0|\\n| 10 | 0 |0|\\n| 15 | 6 |0|\\n| 25 | 20 |5|\\n| 35 | 60 |17|\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Comparative/Trend\",\"questions\":\"\",\"answer_type\":\"Yes/No\",\"answer\":\"No\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"Ions gain more directional energy towards the substrate.\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"The acceleration voltage is related to the energy with which ions bombard the surface. If this energy is too low, there will not be any etching.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"For longer exposure time it could be that due to the higher ion dose there would be some etching. Lower exposure time would however result in the same value, 0.\"}]}]","bbox":[{"panel_id":"b","x":1,"y":552,"width":660,"height":523},{"panel_id":"a","x":1,"y":0,"width":664,"height":538}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_3.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_3.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":667,"height":1075,"image_format":"jpeg","image_sha256":"db23ff27671621577ed208467a5e144d1f45ce41359de9ca1d073be5ac563ede","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}
{"file_name":"images/validation_atomic-layer-etching_experimental-usecase_5_figure_5.jpg","caption":"Figure 5. Etch depth (Å) and etch rate  $(\\mathrm{\\AA} / \\mathrm{cycle})$  of InGaAs, Si,  $\\mathrm{SiO}_2$ ,  $\\mathrm{HfO}_2$ , PR, and ACL measured as a function of  $\\mathrm{Ar^{+}}$  ion desorption time (s/cycle) with the optimized ALE condition in figures 3 and 4.","id":"validation/atomic-layer-etching/experimental-usecase/5/figure_5","sample_id":"atomic-layer-etching/experimental-usecase/5/figure_5","subset":"scatter-plot","split":"validation","classification":[{"panel_id":"a","label":"scatter plot"},{"panel_id":"b","label":"multiple scatter plot"}],"summarization":"[{\"panel_id\":\"a\",\"text\":\"The etch depth increases significantly with increasing acceleration grid voltage.\"},{\"panel_id\":\"b\",\"text\":\"The etch depth increases with higher..., with a steeper increase at 30V compared to 10V.\"}]","data_extraction":"[{\"panel_id\":\"a\",\"text\":\"| Acceleration Grid Voltage (V) | Etch Depth (Å) |\\n|---|---|\\n| 0 | 0 |\\n| 10 | 0 |\\n| 30 | 10 |\\n| 50 | 60 |\"},{\"panel_id\":\"b\",\"text\":\"| ? | Etch Depth (Å) 10 V |Etch Depth (Å) 30 V |\\n|---|---|---|\\n| 0 | 0 | 0 |\\n| 50 | 0 | 25 | \\n| 100 | 0 | 100 |\\n| 150 | 75 | 200 |\"}]","vqa":"[{\"panel_id\":\"b\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"30V, 2 angstrom per cycle\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"Yes, there is, 100 ...\"}]},{\"panel_id\":\"a\",\"items\":[{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Paragraph\",\"answer\":\"yes there is a threshold, 10 V. Below this voltage the ions do not have enough energy to kick out surface atoms.\"},{\"question_type\":\"Process-Oriented\",\"questions\":\"\",\"answer_type\":\"Factoid\",\"answer\":\"60 angstrom\"}]}]","bbox":[{"panel_id":"b","x":0,"y":529,"width":656,"height":464},{"panel_id":"a","x":5,"y":0,"width":653,"height":519}],"source":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_5.jpg","provenance":{"source_annotation":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/images/figure_5.json","source_content":"icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/content.json","source_pdf":["icdar2026-competition-data/dev/atomic-layer-etching/experimental-usecase/5/Atomic layer etching of InGaAs by controlled ion beam.pdf"],"main_category":"atomic-layer-etching","sub_category":"experimental-usecase","paper_id":"5","first_classification_panel_id":"a","first_classification_label":"scatter plot","caption_source":"content.json:img_caption"},"width":658,"height":994,"image_format":"jpeg","image_sha256":"afe8ea678def4192459c8422dc69d481d58072b15dde31296f7b257fc7ec1166","metadata_license":"CC BY 4.0","image_license":"source_publisher_rights_reserved","image_reuse_status":"non_commercial_research_use_only","schema_version":"1.0.0"}