MDS-Onto combines concepts from all different the different ontologies in Materials Data Science
Broader concepts are typically rendered as parents in a concept hierarchy (tree).
has broader
Relates a concept to a concept that is more general in meaning.
A set of specifications that describes how a process is carried out
An algorithm that describes an underlying relationship between inputs and outputs
A process using statistical techniques to examine data to extract underlying relationships
A consequence, effect, or outcome of a process
Dimensions of a sample (if sample is solid)
Unique serial number of a tool (assigned by manufacturer)
Type of a model (linear, regression, logistic, etc.)
Facility where the experiment was performed.
Particular beamline within the facility.
The detector used to capture the transmitted X-rays.
Distance of the detector from the sample.
Piezoelectric sensor location of the AFM instrument.
Drying temperature in the evaporation process of film preparation.
Type of solvent for thin-film preparation.
Drying time in the evaporation process of film preparation.
Controls response time of the feedback loop; can dramatically affect the image quality and dependent on both the duration and magnitude of the error signal.
Size of the AFM scan along one side of the square.
Controls the rate at which the cantilever scans the sample area.
An instrument that does atomic force microscopy (AFM)
A tip used in an AFM instrument that scans across a sample
the force constant of the cantilever; depends on the material
the resonance frequency of the cantilever; depends on the material
hot stage for temperature dependent AFM experiments
temperature range of a hotstage in an AFM instrument
Size of samples that are within working range of an AFM instrument
The speed range in which the probe moves across a sample
Software used by the instrument to perform AFM technique
Tipped structures resulting from ductile failure
An estimation of the stress amplification at the crack tip
Perminant deformation caused by fracture
Failure of a material by tensile stress normal to the plane of the crack, ie: opening
Failure of a material by shear stress parallel to the plane of the crack and parallel to the crack front, ie: tearing
Failure of a material by shear stress parallel to the plane of the crack and perpendicular ot the crack front, ie: sliding
The pattern which results from fatigue crack growth
A mark caused by a changing stress state
A mark perpendicular to the direction of faitgue crack growth
Wavelength(s) of light being used for analysis
Point at which the Z-stop is set, minimum Z value.
Shape describing the interdigitated comb board
Value describing the cleanliness of the interdigitated comb
Value describing the number of fingers an interdigitated comb posseses
Value describing the space between each finger of an interdigitated comb
Specimen subclass for an individual interdigitated comb
Identifier for each pattern of a board containing interdigitated combs
Value describing the masking of an interdigitated comb
Value describing the plating of an interdigitated comb
Value describing the material that the substrate on which the interdigitated combs lie on is composed of
Value describing the material that the finger traces are composed of
An additional component or device such as crystal, gas cell, or sample holder, that enhances or modifies the functionality of the instrument.
measurement of the infrared radiation for baseline correction.
Multiple beamsplitter options are present such as KBr, XT-KBr, and Quartz
The process of adjusting the spectral data to account for any instrumental factor like baseline correction.
A sensitive component that converts infrared radiation from the sample into an electrical signal for spectral analysis.
The specific environmental factors and durations to which samples are subjected to before characterization.
A NicoletFTIR-OpticalSpectroscopy for chemical analysis
An AgilentFTIR-OpticalSpectroscopy for chemical analysis
A company or entity that designs, produces, and supplies the instrument and its accessories.
The specific method or setting used by the spectrometer to acquire spectral data from the sample.
Time the instrument takes for the readings
The ability of the spectrometer to distinguish between closely spaced spectral features i.e smallest difference in wavenumbers.
The process of collecting infrared spectral data from a sample by measuring the absorption at varoius wavelenghths.
The detector's ability to accurately measure and respond to small amounts of infrared radiation.
A unique identifier assigned to each individual instrument.
the computer programs used to control the instrument.
The range of infrared wavelengths the instrument measured
The specific version or type of instrument.
The span of infrared wavelengths that the instrument can measure.
Chemical analysis carried out on the sample.
DC current at the maximum power point under STC
Electrical junction box for connection to the module
DC voltage at the maximum power point under STC
Module open circuit voltage, maximum voltage the module can provide
Polymer backsheet of a PV cell or module
Thickness of the module, not counting the framing
Material used to cover the rear of the module. E.g., TPT, Tedlar.
Technology used on the cell level, i.e., cell architecture. E.g., Al-BSF, PERC, PERT, MWT, IBC, SHJ.
The number of cells in series together per individual string. E.g., 60, 72, etc.
Which version of lead connection is used to connect panel. E.g, MC4, MC3, T4.
Polymer material used to hold front sheet and back sheet together. Eg., EVA, POE, etc.
Method used to wire cells together. RIBBON, SHINGLED, WIRE
Location on rear of module housing junction box(es). Location could be on module EDGE; CENTER or SPLIT are commonly seen on half-cell modules.
Signifier of series or line of products.
Front glass module anti-reflective coating. Boolean.
The materials used for each layer of the solar panel excluding cell components. Either glass on glass (GG), glass with backsheet GB), glass with transparent backsheet (GTB).
Current at maximum power point rated at STC.
Voltage at maximum power point rated at STC.
Number of busbars present per cell. Non-ribbon based technologies show none.
Number of cells in the shortest direction. E.g., 6, 8, 10
Number of cells in the longest direction. E.g., 10, 12, 20
Total number of junction boxes present on the module.
Number of series connections present in the module. 1 if all cells in series, 2 or more otherwise.
Reduction of some percent of ISC per degree Celsius. Rate at which current changes in reponse to a change in temperature.
Reduction of some percent of PMP per degree Celsius. Rate at which power changes in reponse to a change in temperature.
Reduction of some percent of VOC per degree Celsius. Rate at which a voltage changes in reponse to a change in temperature.
Distinguishes whether the silicon wafer was manufactured as a single crystal, multiple crystals, or no crystal (amorphous); if not silicon, another value is used such as THIN FILM.
Doping polarity of absorber. E.g., n-type or p-type.
A PV module, comprised of cells, for field deployment
Measurements of a module taken at STC and 1000 W/m^2 irradiance
Cell technology (PERC, TOPCon, Al-BSF, CdTe, CIGS, etc)
DC voltage at the maximum power point of the cell
Charge controller output voltage [A-dc].
Charge controller output voltage [V-dc].
How PV modules are arranged within the system
Type of racking used (open, closed, roof, etc)
If system is tracking, method used (truetracking, backtracking, diffuse tracking, etc)
North/south position of a point on the Earth, decimal format
East/west position of a point on the Earth, decimal format
How the arrays are mounted (fixed, one axis tracker, two axis tracker, vertical, etc)
The cummulative time a batch or sample was in exposure.
Water content in the air divided by maximum water held at that temperature.
The type of exposure e.g. damp heat, cyclic UV, outdoors.
The temperature set point of the chamber.
The file path of a dataset generated by a current voltage process
The author of a recipe for a current voltage process
The creation date for a current voltage process recipe
The file path for a current voltage process recipe
The identification number for a current voltage recipe
The datetime when a current voltage process was executed
The standard testing condition load voltage of a sample being measured
The model of the solar simulator, i.e. FMT-350
The identification number of a solar simulator
The manufacturer of a solar simulator, i.e. 'Sinton Instruments'
The name of a solar simulator, i.e. 'Lab 1 Simulator'
The step size of the voltage for a current voltage process
Area of an invididual cell within a module that a current voltage process is being performed on
Total area of the module that a current voltage process is being performed on
The cell efficiency measured by a current voltage process
A calibration setting that deteremines the irradiance level of a light source, typically determined by a reference cell
The current at max power measured by a current voltage process
The analysis method used on a raw dataset generated by a current voltage process
The raw current voltage data generated by a current voltage process
The parameters that resulted from the current voltage process
A sample used in a current voltage process
The ambient temperature of the room that a current voltage process is being performed in
The fill factor measured by a current voltage process
The amount of time data is acquired during flash pulses
The maximum power point measured by a current voltage process
The open circuit voltage measured by a current voltage process
Resisitivity of the sample that a current voltage is being performed on
The saturation current density measured by a current voltage process
The series resistance measured by a current voltage process
The short circuit current measured by a current voltage process
The shunt resistance measured by a current voltage process
The working range of the current of a simulator
The working range of the intensity of a simulator
The working range of the voltage of a simulator
A tool used to simulate the environment of a sun for a PV module, to perform a current voltage measurement
The established intensity of a current voltage process
The voltage at max power measured by a current voltage process
Number of cells in a group of solar panels connected in series in a module
Number of groups of solar panels connected in series in a module
Type of measurement a simulator is performing
The amount a cell's output voltage changes due to temperature
Doping type of the wafer that a current voltage process is being performed on
A recipe describing the settings for a current voltage process