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+publicationDate,title,abstract,id
+2017/1/16,Electric field modulation of the non-linear areal magnetic anisotropy energy,"We study the ferromagnetic layer thickness dependence of the
+voltage-controlled magnetic anisotropy (VCMA) in gated CoFeB/MgO
+heterostructures with heavy metal underlayers. When the effective CoFeB
+thickness is below ~1 nm, the VCMA efficiency of Ta/CoFeB/MgO heterostructures
+considerably decreases with decreasing CoFeB thickness. We find that a high
+order phenomenological term used to describe the thickness dependence of the
+areal magnetic anisotropy energy can also account for the change in the areal
+VCMA efficiency. In this structure, the higher order term competes against the
+common interfacial VCMA, thereby reducing the efficiency at lower CoFeB
+thickness. The areal VCMA efficiency does not saturate even when the effective
+CoFeB thickness exceeds ~1 nm. We consider the higher order term is related to
+the strain that develops at the CoFeB/MgO interface: as the average strain of
+the CoFeB layer changes with its thickness, the electronic structure of the
+CoFeB/MgO interface varies leading to changes in areal magnetic anisotropy
+energy and VCMA efficiency.",1701.04150v1
+2018/10/1,Determination of spin Hall angle in heavy metal/CoFeB-based heterostructures with interfacial spin-orbit fields,"Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was
+investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR)
+technique. An analytical model based on magnetization dynamics due to SOT was
+used to fit heavy metal (HM) thickness dependence of symmetric and
+antisymmetric components of the SOT-FMR signal. The analysis resulted in a
+determination of the properties of HM layers, such as spin Hall angle and spin
+diffusion length. The spin Hall angle of -0.36 and 0.09 has been found in the
+W/CoFeB and CoFeB/Pt bilayers, respectively, which add up in the case of
+W/CoFeB/Pt trilayer. More importantly, we have determined effective interfacial
+spin-orbit fields at both W/CoFeB and CoFeB/Pt interfaces, which are shown to
+cancel Oersted field for particular thicknesses of the heavy metal layers,
+leading to pure spin-current-induced dynamics and indicating the possibility
+for a more efficient magnetization switching.",1810.00641v1
+2011/7/1,"High frequency magnetic behavior through the magnetoimpedance effect in CoFeB/(Ta, Ag, Cu) multilayered ferromagnetic thin films","We studied the dynamics of magnetization through an investigation of the
+magnetoimpedance effect in CoFeB/(Ta, Ag, Cu) multilayered thin films grown by
+magnetron sputtering. Impedance measurements were analyzed in terms of the
+mechanisms responsible for their variations at different frequency intervals
+and the magnetic and structural properties of the multilayers. Analysis of the
+mechanisms responsible for magnetoimpedance according to frequency and external
+magnetic field showed that for the CoFeB/Cu multilayer, ferromagnetic resonance
+(FMR) contributes significantly to the magnetoimpedance effect at frequencies
+close to 470 MHz. This frequency is low when compared to the results obtained
+for CoFeB/Ta and CoFeB/Ag multilayers and is a result of the anisotropy
+distribution and non-formation of regular bilayers in this sample. The MImax
+values occurred at different frequencies according to the used non-magnetic
+metal. Variations between 25% and 30% were seen for a localized frequency band,
+as in the case of CoFeB/Ta and CoFeB/Ag, as well as for a wide frequency range,
+in the case of CoFeB/Cu.",1107.0204v1
+2023/1/12,Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers,"We developed a cryogenic temperature deposition process for high-performance
+CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized
+silicon wafers. The effect of the deposition temperature of the CoFeB layers on
+the nanostructure, magnetic and magneto-transport properties of the MTJs were
+investigated in detail. When CoFeB was deposited at 100 K, the MTJs exhibited a
+perpendicular magnetic anisotropy (PMA) of 214 uJ/m2 and a voltage-controlled
+magnetic anisotropy (VCMA) coefficient of -45 fJ/Vm, corresponding to 1.4- and
+1.7-fold enhancements in PMA and VCMA, respectively, compared to the case of
+room-temperature deposition of CoFeB. The improvement in the MTJ properties was
+not simply due to the morphology of the MTJ films. The interface-sensitive
+magneto-transport properties indicated that interfacial qualities such as
+intermixing and oxidation states at the MgO/CoFeB interfaces were improved by
+the cryogenic temperature deposition. Cryogenic-temperature sputtering
+deposition is expected to be a standard manufacturing process for
+next-generation magnetoresistive random-access memory.",2301.04823v1
+2007/2/9,X-ray photoemission study of CoFeB/MgO thin film bi-layers,"We present results from an X-ray photoemission spectroscopy (XPS) study of
+CoFeB/MgO bi-layers where we observe process-dependent formation of B, Fe, and
+Co oxides at the CoFeB/MgO interface due to oxidation of CoFeB during MgO
+deposition. Vacuum annealing reduces the Co and Fe oxides but further
+incorporates B into the MgO forming a composite MgBxOy layer. Inserting an Mg
+layer between CoFeB and MgO introduces an oxygen sink, providing increased
+control over B content in the barrier.",0702232v1
+2005/4/3,Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur,"We investigated the dependence of giant tunnel magnetoresistance (TMR) on the
+thickness of an MgO barrier and on the annealing temperature of sputtered
+CoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers. The
+resistance-area product exponentially increases with MgO thickness, indicating
+that the quality of MgO barriers is high in the investigated thickness range of
+1.15-2.4 nm. High-resolution transmission electron microscope images show that
+annealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeB
+structures, even though CoFeB electrodes are amorphous in the as-sputtered
+state. The TMR ratio increases with annealing temperature and is as high as
+260% at room temperature and 403% at 5 K.",0504051v1
+2021/3/30,Thermal annealing enhancement of Josephson critical currents in ferromagnetic CoFeB,"The electrical and structural properties of Co40Fe40B20 (CoFeB) alloy are
+tunable with thermal annealing. This is key in the optimization of CoFeB-based
+spintronic devices, where the advantageously low magnetic coercivity, high spin
+polarization, and controllable magnetocrystalline anisotropy are utilised. So
+far, there has been no report on superconducting devices based on CoFeB. Here,
+we report Nb/CoFeB/Nb Josephson devices and demonstrate an enhancement of the
+critical current by up to 700% following thermal annealing due to increased
+structural ordering of the CoFeB. The results demonstrate that CoFeB is a
+promising material for the development of superconducting spintronic devices.",2103.16136v1
+2020/6/22,Spin-orbit torque induced magnetisation dynamics and switching in CoFeB/Ta/CoFeB system with mixed magnetic anisotropy,"Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB
+trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA)
+and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer
+exchange coupling (IEC), measured using ferromagnetic resonance technique is
+modified by varying thickness of Ta spacer. The evolution of the IEC leads to
+different orientation of the magnetic anisotropy axes of two CoFeB layers: for
+thicker Ta layer where magnetisation prefers antiferromagnetic ordering and for
+thinner Ta layer where ferromagnetic coupling exists. Magnetisation state of
+the CoFeB layer exhibiting PMA is controlled by the spin-polarized current
+originating from SOT in $\mu m$ sized Hall bars. The evolution of the critical
+SOT current density with Ta thickness is presented, showing an increase with
+decreasing $t_\mathrm{Ta}$, which coincides with the coercive field dependence.
+In a narrow range of $t_\mathrm{Ta}$ corresponding to the ferromagnetic IEC,
+the field-free SOT-induced switching is achieved.",2006.12068v1
+2023/8/17,Interfacial Fe segregation and its influence on magnetic properties of CoFeB/MgFeO multilayers,"We investigated the effect of Fe segregated from partially Fe-substituted MgO
+(MgFeO) on the magnetic properties of CoFeB/MgFeO multilayers. X-ray
+photoelectron spectroscopy (XPS) as well as magnetic measurements revealed that
+the segregated Fe was reduced to metal and exhibited ferromagnetism at the
+CoFeB/MgFeO interface. The CoFeB/MgFeO multilayer showed more than 2-fold
+enhancement in perpendicular magnetic anisotropy (PMA) energy density compared
+with a standard CoFeB/MgO multilayer. The PMA energy density was further
+enhanced by inserting an ultrathin MgO layer in between CoFeB and MgFeO layers.
+Ferromagnetic resonance measurement also revealed a remarkable reduction of
+magnetic damping in the CoFeB/MgFeO multilayers.",2308.08876v1
+2012/8/29,CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions,"Thermal stability factor (delta) of recording layer was studied in
+perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with
+various CoFeB recording layer thicknesses and junction sizes. In all series of
+p-MTJs with different thicknesses, delta is virtually independent of the
+junction sizes of 48-81 nm in diameter. The values of delta increase linearly
+with increasing the recording layer thickness. The slope of the linear fit is
+explained well by a model based on nucleation type magnetization reversal.",1208.5828v1
+2016/10/24,Spin orbit effects in CoFeB/MgO hetereostructures with heavy metal underlayers,"We study effects originating from the strong spin orbit coupling in CoFeB/MgO
+heterostructures with heavy metal (HM) underlayers. The perpendicular magnetic
+anisotropy at the CoFeB/MgO interface, the spin Hall angle of the heavy metal
+layer, current induced torques and the Dzyaloshinskii-Moriya interaction at the
+HM/CoFeB interfaces are studied for films in which the early 5d transition
+metals are used as the HM underlayer. We show how the choice of the HM layer
+influences these intricate spin orbit effects that emerge within the bulk and
+at interfaces of the heterostructures.",1610.07473v1
+2014/6/10,Influence of Ta insertions on the magnetic properties of MgO/CoFeB/MgO films probed by ferromagnetic resonance,"We show by vector network analyzer ferromagnetic resonance measurements that
+low Gilbert damping {\alpha} down to 0.006 can be achieved in perpendicularly
+magnetized MgO/CoFeB/MgO thin films with ultra-thin insertions of Ta in the
+CoFeB layer. While increasing the number of Ta insertions allows thicker CoFeB
+layers to remain perpendicular, the effective areal magnetic anisotropy does
+not improve with more insertions, and also comes with an increase in {\alpha}.",1406.2491v2
+2017/7/11,Interface Dzyaloshinskii-Moriya interaction in the interlayer exchange antiferromagnetic coupled Pt/CoFeB/Ru/CoFeB systems,"Interfacial Dzyaloshinskii-Moriya interaction (iDMI) in interlayer exchange
+coupled (IEC) Pt/Co$_{20}$Fe$_{60}$B$_{20}$(1.12
+nm)/Ru/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm) systems have been studied
+theoretically and experimentally. Vibrating sample magnetometer has been used
+to measure their magnetization at saturation and their interlayer exchange
+coupling constants. These latter are found to be of an antiferromagnetic nature
+for the investigated Ru range thickness (0.5-1 nm). Their dynamic magnetic
+properties were studied using Brillouin light scattering (BLS) technique. The
+BLS measurements reveal pronounced non-reciprocal spin waves propagation. In
+contrast to the calculations for symmetrical IEC CoFeB layers, this
+experimental nonreciprocity is Ru thickness and thus coupling strength
+dependent. Therefore, to explain the experimental behaviour, a theoretical
+model based on the perpendicular interface anisotropy difference between the
+bottom and top CoFeB layers has been developed. We show that the Ru thickness
+dependence of the spin wave non-reciprocity is well reproduced by considering a
+constant iDMI and different perpendicular interfacial anisotropy fields between
+the top and bottom CoFeB layers. This anisotropy difference has been confirmed
+by the investigation of the CoFeB thickness dependence of effective
+magnetization of Pt/CoFeB/Ru and Ru/CoFeB/MgO individual layers, where a linear
+behaviour has been observed.",1707.03427v1