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README.md
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dtype: string
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dtype: int64
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dtype: int64
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- name: is_interstitial_a
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dtype: int64
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dtype: int64
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- name: is_interstitial_n
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dtype: int64
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- name: M_Al
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dtype: int64
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- name: M_As
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dtype: int64
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- name: M_Cd
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dtype: int64
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- name: M_Ga
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dtype: int64
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- name: M_In
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dtype: int64
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- name: M_P
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dtype: int64
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- name: M_S
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dtype: int64
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- name: M_Sb
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dtype: int64
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- name: M_Se
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dtype: int64
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- name: M_Te
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dtype: int64
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- name: M_i_Cd_site
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dtype: int64
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- name: M_i_S_site
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dtype: int64
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- name: M_i_Se_site
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dtype: int64
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- name: M_i_Te_site
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dtype: int64
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- name: M_i_neut_site
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dtype: int64
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- name: charge_from
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dtype: int64
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- name: charge_to
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dtype: int64
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- name: host bandgap_[eV]
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dtype: float64
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- name: host lattice constant_[Ang.]
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dtype: float64
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- name: host_epsilon
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dtype: float64
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- name: ba_shift
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dtype: float64
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- name: mba_pbe
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dtype: float64
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- name: mba_pbe_gapfrac
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dtype: float64
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- name: pbe defect level (relative to VBM)_[eV]
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dtype: float64
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- name: hse defect level (relative to VBM)_[eV]
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dtype: float64
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splits:
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- name: train
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num_bytes: 846492
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num_examples: 2910
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download_size: 102805
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dataset_size: 846492
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configs:
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- config_name: default
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data_files:
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- split: train
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path: data/train-*
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---
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| 1 |
---
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+
license: cc-by-4.0
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task_categories:
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- tabular-regression
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- tabular-classification
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tags:
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- materials-science
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- chemistry
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- foundry-ml
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- scientific-data
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size_categories:
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- 1K<n<10K
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---
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# Machine learning for impurity charge-state transition levels in semiconductors from elemental properties using multi-fidelity datasets
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Dataset containing DFT-calculated defect charge state transition levels of 2910 semiconductor-impurity pairs
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## Dataset Information
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- **Source**: [Foundry-ML](https://github.com/MLMI2-CSSI/foundry)
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- **DOI**: [10.18126/ite0-3iah](https://doi.org/10.18126/ite0-3iah)
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- **Year**: 2022
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- **Authors**: Polak, Maciej P., Jacobs, Ryan, Mannodi-Kanakkithodi, Arun, Chan, Maria K. Y., Morgan, Dane
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- **Data Type**: tabular
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### Fields
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| Field | Role | Description | Units |
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|-------|------|-------------|-------|
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| host_material | input | Composition of host | |
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| host_element_a | input | Host element of A site | |
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| host_element_b | input | Host element of B site | |
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| impurity | input | Impurity element type | |
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| removed_element | input | Removed element type | |
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| site_type | input | Type of the lattice site the impurity resides | |
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| site | input | Name of the lattice site the impurity resides | |
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| is_a_latt | input | Whether impurity resides on the A sublattice | |
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| is_interstitial | input | Whether impurity is on an interstitial site | |
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| is_interstitial_a | input | Whether impurity is on a A-site interstitial site | |
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| is_interstitial_b | input | Whether impurity is on a B-site interstitial site | |
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| is_interstitial_n | input | Whether impurity is on a neutral interstitial site | |
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| M_Al | input | One-hot encoding of site type | |
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| M_As | input | One-hot encoding of site type | |
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| M_Cd | input | One-hot encoding of site type | |
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| M_Ga | input | One-hot encoding of site type | |
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| M_In | input | One-hot encoding of site type | |
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| M_P | input | One-hot encoding of site type | |
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| M_S | input | One-hot encoding of site type | |
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| M_Sb | input | One-hot encoding of site type | |
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| M_Se | input | One-hot encoding of site type | |
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| M_Te | input | One-hot encoding of site type | |
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| M_i_Cd_site | input | One-hot encoding of site type | |
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| M_i_S_site | input | One-hot encoding of site type | |
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| M_i_Se_site | input | One-hot encoding of site type | |
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| M_i_Te_site | input | One-hot encoding of site type | |
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| M_i_neut_site | input | One-hot encoding of site type | |
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| charge_from | input | Initial charge of defect | electrons |
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| charge_to | input | Final charge of defect | electrons |
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| host bandgap_[eV] | input | Experimental bandgap of the host material | eV |
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| host lattice constant_[Ang.] | input | Lattice constant of the host material | Angstroms |
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| host_epsilon | input | Dielectric constant of the host material | |
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| ba_shift | input | Band alignment correction shift | eV |
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| pbe defect level (relative to VBM)_[eV] | target | DFT-PBE calculated defect charge state transition | eV |
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| mba_pbe | input | Modified band alignment correction shift | eV |
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| mba_pbe_gapfrac | input | Modified band alignment correction shift, given as | |
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| hse defect level (relative to VBM)_[eV] | target | DFT-HSE calculated defect charge state transition | eV |
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### Splits
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- **train**: train
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## Usage
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### With Foundry-ML (recommended for materials science workflows)
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```python
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from foundry import Foundry
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f = Foundry()
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dataset = f.get_dataset("10.18126/ite0-3iah")
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X, y = dataset.get_as_dict()['train']
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```
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### With HuggingFace Datasets
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```python
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from datasets import load_dataset
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dataset = load_dataset("semiconductor_defectlevels_v1.1")
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```
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## Citation
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```bibtex
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@misc{https://doi.org/10.18126/ite0-3iah
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doi = {10.18126/ite0-3iah}
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url = {https://doi.org/10.18126/ite0-3iah}
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author = {Polak, Maciej P. and Jacobs, Ryan and Mannodi-Kanakkithodi, Arun and Chan, Maria K. Y. and Morgan, Dane}
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title = {Machine learning for impurity charge-state transition levels in semiconductors from elemental properties using multi-fidelity datasets}
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keywords = {machine learning, foundry}
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publisher = {Materials Data Facility}
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year = {root=2022}}
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```
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## License
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CC-BY 4.0
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---
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*This dataset was exported from [Foundry-ML](https://github.com/MLMI2-CSSI/foundry), a platform for materials science datasets.*
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