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H2nNnbpoQv8korNuxA1kltjl7sq | physics | electronic-devices | semiconductor-and-p-n-junction-diode | The circuit contains two diodes each with a forward resistance of 50$$\Omega$$ and with infinite reverse resistance. If the battery voltage is 6V, the current through the 120$$\Omega$$ resistance is ____________ mA.<br/><br/><img src="data:image/png;base64,UklGRmwKAABXRUJQVlA4IGAKAADQQgCdASoAAd8APm02lUkkIqIhIVObIIANiWl... | [] | null | 20 | <p>Given, forward resistance, R<sub>1</sub> = 50 $$\Omega$$</p>
<p>Reverse resistance, R<sub>2</sub> = infinity</p>
<p>Battery voltage = 6V</p>
<p>According to circuit diagram,</p>
<p> <img src="https://app-content.cdn.examgoal.net/fly/@width/image/1ky4hdnx6/5c41556c-07f0-4836-af96-a96fb496fdd1/48fdaba0-6fc4-11ec-8887-... | integer | jee-main-2021-online-26th-february-morning-slot | 10,551 |
tfOaIZ6mjA1w9g5BUS1kluno7da | physics | electronic-devices | semiconductor-and-p-n-junction-diode | The zener diode has a V<sub>z</sub> = 30V. The current passing through the diode for the following circuit is ________ mA.<br/><br/><img src="data:image/png;base64,UklGRqIGAABXRUJQVlA4IJYGAADQMQCdASprAZ4APm02l0ikIyIhIXTawIANiWlu4WrkNmNwsR5J/rXbJ/fPyH6+nwn7Dbbd213r381/F72w7wdpv+kfxj9wPKM5nPfA/zP9E8TH+G/HT3A+mHmZ/37+PebB... | [] | null | 9 | <img src="https://res.cloudinary.com/dckxllbjy/image/upload/v1734267788/exam_images/pwhz8sxcfyuqohyasw4g.webp" style="max-width: 100%;height: auto;display: block;margin: 0 auto;" loading="lazy" alt="JEE Main 2021 (Online) 26th February Evening Shift Physics - Semiconductor Question 109 English Explanation"><br><br>$$I ... | integer | jee-main-2021-online-26th-february-evening-slot | 10,552 |
MP9cvsnFJdLp167J3x1kmhpb7nf | physics | electronic-devices | semiconductor-and-p-n-junction-diode | The value of power dissipated across the zener diode (V<sub>z</sub> = 15V) connected in the circuit as shown in the figure is x $$\times$$ 10<sup>$$-$$1</sup> watt.<br/><br/><img src="data:image/png;base64,UklGRjwKAABXRUJQVlA4IDAKAADQQACdASqAAaQAPm00l0ikIqKhIvIKeIANiWlu4XExG/ON8Nfx3tA/rX5F+I35f++flJ5qu0s+oP4P+Rf3D/of03... | [] | null | 5 | <img src="https://res.cloudinary.com/dckxllbjy/image/upload/v1734264237/exam_images/odrkun4f19ans1hamrwx.webp" style="max-width: 100%;height: auto;display: block;margin: 0 auto;" loading="lazy" alt="JEE Main 2021 (Online) 16th March Morning Shift Physics - Semiconductor Question 108 English Explanation">
<br>$$i = {7 \... | integer | jee-main-2021-online-16th-march-morning-shift | 10,553 |
gto7vHKQZCIJZj9IbI1krplf2eu | physics | electronic-devices | semiconductor-and-p-n-junction-diode | For the circuit shown below, calculate the value of I<sub>z</sub> :<br/><br/><img src="data:image/png;base64,UklGRggRAABXRUJQVlA4IPwQAACwaACdASr1AdIAPm00lkikIqKhInLaYIANiWlu4WyXfWuqNn6Vfxz8j/A3+3/1D9mPQv8R+W/t39e/aP0+P5b+NdV9/Qdtx7n/D/6X/tP7x84fzf/C/z39i/yA9r/g58MewL6f/vf8d/qX/H/rXpw/R7+zf2bxBwA/UD/N/yn+k/9f+4eed/Ffxj1... | [{"identifier": "A", "content": "25 mA"}, {"identifier": "B", "content": "0.1 A"}, {"identifier": "C", "content": "0.15 A"}, {"identifier": "D", "content": "0.05 A"}] | ["A"] | null | Consider the given figure and draw the direction of current as follows<br><br> <img src="https://app-content.cdn.examgoal.net/fly/@width/image/1kypntrbg/7fdc2c1a-a0d8-4b92-8a96-ecbd85d86ac6/f4f93cc0-7b69-11ec-a48e-214c9e0044f4/file-1kypntrbh.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1kypntr... | mcq | jee-main-2021-online-20th-july-morning-shift | 10,554 |
1krqecbad | physics | electronic-devices | semiconductor-and-p-n-junction-diode | A zener diode having zener voltage 8 V and power dissipation rating of 0.5 W is connected across a potential divider arranged with maximum potential drop across zener diode is as shown in the diagram. The value of protective resistance R<sub>p</sub> is .................... $$\Omega$$.<br/><br/><img src="data:image/png;... | [] | null | 192 | P = Vi<br><br>0.5 = 8i<br><br>i = $${1 \over {16}}$$A<br><br>E = 20 = 8 + i R<sub>p</sub><br><br>R<sub>p</sub> = 12 $$\times$$ 16 = 192$$\Omega$$ | integer | jee-main-2021-online-20th-july-evening-shift | 10,555 |
1krqf300f | physics | electronic-devices | semiconductor-and-p-n-junction-diode | For the forward biased diode characteristics shown in the figure, the dynamic resistance at I<sub>D</sub> = 3 mA will be __________ $$\Omega$$.<br/><br/><img src="data:image/png;base64,UklGRoYNAABXRUJQVlA4IHoNAACQbgCdASrcAY0BP4HA22S2MK2nIjLpisAwCWlu/GPZcetQ3P06/w3bjj75f/rk/pu9u6f7EwAHckTLJTnJA+6dEB3zv3//6etX//+tyJBYcq/... | [] | null | 25 | $${R_d} = {{dV} \over {di}} = {1 \over {{{di} \over {dv}}}} = {1 \over {{{5 - 1 \times {{10}^{ - 3}}} \over {0.75 - 0.65}}}}$$<br><br>$$ = {{100} \over 4} = 25\Omega $$ | integer | jee-main-2021-online-20th-july-evening-shift | 10,556 |
1krswlx8f | physics | electronic-devices | semiconductor-and-p-n-junction-diode | Consider a situation in which reserve biased current of a particular P-N junction increases when it is exposed to a light of wavelength $$\le$$ 621 nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly. | [{"identifier": "A", "content": "1 eV"}, {"identifier": "B", "content": "4 eV"}, {"identifier": "C", "content": "0.5 eV"}, {"identifier": "D", "content": "2 eV"}] | ["D"] | null | Band gap = $${{hc} \over \lambda } = 2$$ eV | mcq | jee-main-2021-online-22th-july-evening-shift | 10,557 |
1krsxgcl4 | physics | electronic-devices | semiconductor-and-p-n-junction-diode | In a given circuit diagram, a 5 V zener diode along with a series resistance is connected across a 50 V power supply. The minimum value of the resistance required, if the maximum zener current is 90 mA will be __________ $$\Omega$$.<br/><br/><img src="data:image/png;base64,UklGRjAMAABXRUJQVlA4ICQMAAAQTwCdASqBAcMAPm0wlk... | [] | null | 500 | $$I = {{50 - {V_z}} \over R} = {5 \over {{R_L}}} + 90 \times {10^{ - 3}}$$<br><br><img src="https://res.cloudinary.com/dckxllbjy/image/upload/v1734263737/exam_images/hposyrwmy3lb9n5nf6w5.webp" style="max-width: 100%;height: auto;display: block;margin: 0 auto;" loading="lazy" alt="JEE Main 2021 (Online) 22th July Evenin... | integer | jee-main-2021-online-22th-july-evening-shift | 10,558 |
1krwcvx69 | physics | electronic-devices | semiconductor-and-p-n-junction-diode | In a semiconductor, the number density of intrinsic charge carries at 27$$^\circ$$C is 1.5 $$\times$$ 10<sup>16</sup>/m<sup>3</sup>. If the semiconductor is doped with impurity atom, the hole density increases to 4.5 $$\times$$ 10<sup>22</sup>/m<sup>3</sup>. The electron density in the doped semiconductor is __________... | [] | null | 5 | $${n_e}{n_h} = {n_i}^2$$<br><br>$${n_e} = {{{n_i}^2} \over {{n_h}}} = {{{{(1.5 \times {{10}^{16}})}^2}} \over {4.5 \times {{10}^{22}}}}$$<br><br>$$ = {{1.5 \times 1.5 \times {{10}^{32}}} \over {4.5 \times {{10}^{22}}}}$$<br><br>$$ = 5 \times {10^9}$$/m<sup>3</sup> | integer | jee-main-2021-online-25th-july-evening-shift | 10,559 |
1ktbvpp48 | physics | electronic-devices | semiconductor-and-p-n-junction-diode | For the given circuit, the power across Zener diode is .............. mW.<br/><br/><img src="data:image/png;base64,UklGRo4NAABXRUJQVlA4IIINAACwWwCdASoCAsEAPm02l0ikIyUhIdN6IKANiWlu4XFuArdbi94l/ln8A/XPwT/uf5R9dj559jPTX/eukB/qu299h/mv9T/2/px/jf5f+OPp38Gf571CPUf9m/j39V/4v9s9Q/+V/pP8z8D6wHoF+6Pzb+9/x/+af9n/BeeX/C/xz+kewv1A/... | [] | null | 120 | <picture><source media="(max-width: 320px)" srcset="https://res.cloudinary.com/dckxllbjy/image/upload/v1734265553/exam_images/kayk5phe88yruz0suqqi.webp"><source media="(max-width: 500px)" srcset="https://res.cloudinary.com/dckxllbjy/image/upload/v1734265810/exam_images/ljhrdmjuh5xq2ypcfifb.webp"><source media="(max-wid... | integer | jee-main-2021-online-26th-august-evening-shift | 10,561 |
1ktfo1dcq | physics | electronic-devices | semiconductor-and-p-n-junction-diode | A zener diode of power rating 2W is to be used as a voltage regulator. If the zener diode has a breakdown of 10 V and it has to regulate voltage fluctuated between 6 V and 14 V, the value of R<sub>s</sub> for safe operation should be ___________ $$\Omega$$.<br/><br/><img src="data:image/png;base64,UklGRp4QAABXRUJQVlA4I... | [] | null | 20 | When unregulated voltage is 14 V voltage across zener diode must be 10 V. So potential difference across resistor $$\Delta$$V<sub>Rs</sub> = 4V<br><br>and P<sub>zener</sub> = 2W<br><br>VI = 2<br><br>I = $${2 \over {10}}$$ = 0.2 A<br><br>$$\Delta$$V<sub>Rs</sub> = I R<sub>s</sub><br><br>4 $$\times$$ 0.2 R<sub>s</sub> $$... | integer | jee-main-2021-online-27th-august-evening-shift | 10,562 |
1kth4201e | physics | electronic-devices | semiconductor-and-p-n-junction-diode | Choose the correct waveform that can represent the voltage across R of the following circuit, assuming the diode is ideal one :<br/><br/><img src="data:image/png;base64,UklGRi4KAABXRUJQVlA4ICIKAADQSQCdASqiAdQAPm02l0kkIqIhIJK50IANiWlu4XNBG/OH8M/yL8bfAz+6/1f9k/Eh85/Xfyq9MKrj+AO6p95/jn9a/1n9T9W/71/GfH32j6hfpb+5/xv+d/63+t+... | [{"identifier": "A", "content": "<img src=\"https://res.cloudinary.com/dckxllbjy/image/upload/v1734265413/exam_images/yhqyegihqni5b02ku4yd.webp\" style=\"max-width: 100%;height: auto;display: block;margin: 0 auto;\" loading=\"lazy\" alt=\"JEE Main 2021 (Online) 31st August Morning Shift Physics - Semiconductor Question... | ["D"] | null | When V<sub>i</sub> > 3 volt, V<sub>R</sub> > 0<br><br>Because diode will be in forward biased state<br><br>When V<sub>i</sub> $$\le$$ 3 volt ; V<sub>R</sub> = 0<br><br>Because diode will be in reverse biased state. | mcq | jee-main-2021-online-31st-august-morning-shift | 10,563 |
1ktjpylhf | physics | electronic-devices | semiconductor-and-p-n-junction-diode | Statement - I :<br/><br/>To get a steady dc output from the pulsating voltage received from a full wave rectifier we can connect a capacitor across the output parallel to the load R<sub>L</sub>.<br/><br/>Statement - II :<br/><br/>To get a steady dc output from the pulsating voltage received from a full wave rectifier w... | [{"identifier": "A", "content": "Statement I is true but Statement II is false"}, {"identifier": "B", "content": "Statement I is false but Statement II is true"}, {"identifier": "C", "content": "Both Statement I and Statement II are false"}, {"identifier": "D", "content": "Both Statement I and Statement II are true"}] | ["D"] | null | To convert pulsating dc into steady dc both of mentioned method are correct. | mcq | jee-main-2021-online-31st-august-evening-shift | 10,564 |
1ktmotk4a | physics | electronic-devices | semiconductor-and-p-n-junction-diode | In the given figure, each diode has a forward bias resistance of 30$$\Omega$$ and infinite resistance in reverse bias. The current I<sub>1</sub> will be :<br/><br/><img src="data:image/png;base64,UklGRowSAABXRUJQVlA4IIASAACQCgGdASo8AgADP4HA2WQ2MKymopL54sAwCWlu4WuSLmNwu56d/4H929l/Unyts6A3lw3u13UfWggyfCo//OJ/9rZP//9d/3+L... | [{"identifier": "A", "content": "3.75 A"}, {"identifier": "B", "content": "2.35 A"}, {"identifier": "C", "content": "2 A"}, {"identifier": "D", "content": "2.73 A"}] | ["C"] | null | As per diagram,<br><br>Diode D<sub>1</sub> & D<sub>2</sub> are in forward bias i.e. R = 30$$\Omega$$ whereas diode D<sub>3</sub> is in reverse bias i.e. R = infinite $$\Rightarrow$$ Equivalent circuit will be<br><br>Applying KVL starting from point A<br><br><img src="https://app-content.cdn.examgoal.net/fly/@width/... | mcq | jee-main-2021-online-1st-september-evening-shift | 10,565 |
1l54vrih4 | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>A potential barrier of 0.4 V exists across a p-n junction. An electron enters the junction from the n-side with a speed of 6.0 $$\times$$ 10<sup>5</sup> ms<sup>$$-$$1</sup>. The speed with which electron enters the p side will be $${x \over 3} \times {10^5}$$ ms<sup>$$-$$1</sup> the value of x is _____________.</p>
... | [] | null | 14 | <p>Conserving energy,</p>
<p>$${1 \over 2}m{v^2} = {1 \over 2}m{(6 \times {10^5})^2} - 0.4\,eV$$</p>
<p>$$ \Rightarrow v = \sqrt {{{(6 \times {{10}^5})}^2} - {{2 \times 1.6 \times {{10}^{ - 19}} \times 0.4} \over {9 \times {{10}^{ - 31}}}}} $$</p>
<p>$$ = \sqrt {36 \times {{10}^{10}} - {{1.28} \over 9} \times {{10}^{12... | integer | jee-main-2022-online-29th-june-evening-shift | 10,566 |
1l55lm97x | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>In the given circuit the input voltage V<sub>in</sub> is shown in figure. The cut-in voltage of p-n junction diode (D<sub>1</sub> or D<sub>2</sub>) is 0.6 V. Which of the following output voltage (V<sub>0</sub>) waveform across the diode is correct?</p>
<p> <img src="data:image/png;base64,UklGRqwTAABXRUJQVlA4IKATAAB... | [{"identifier": "A", "content": "<img src=\"https://app-content.cdn.examgoal.net/fly/@width/image/1l57abl4c/12328c5d-d580-4ecc-8e55-f064a2b31d17/8ce7cec0-fbe4-11ec-9cb0-2b7fdcfae982/file-1l57abl4d.png?format=png\" data-orsrc=\"https://app-content.cdn.examgoal.net/image/1l57abl4c/12328c5d-d580-4ecc-8e55-f064a2b31d17/8ce... | ["D"] | null | <p>Till $$|V| \le 0.6V$$</p>
<p>$$|{V_0}| = |V|$$</p>
<p>So correct graph will be D.</p> | mcq | jee-main-2022-online-28th-june-evening-shift | 10,567 |
1l55lwer1 | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>A zener of breakdown voltage V<sub>z</sub> = 8 V and maximum zener current, I<sub>ZM</sub> = 10 mA is subjectd to an input voltage V<sub>i</sub> = 10 V with series resistance R = 100 $$\Omega$$. In the given circuit R<sub>L</sub> represents the variable load resistance. The ratio of maximum and minimum value of R<su... | [] | null | 2 | <p>Minimum value of R<sub>L</sub> for which the diode is shorted is $${{{R_L}} \over {{R_L} + 100}} \times 10 = 8 \Rightarrow {R_L} = 400\,\Omega $$</p>
<p>For maximum value of R<sub>L</sub>, current through diode is 10 mA</p>
<p>So $${i_R} = {i_{{R_L}}} + {I_{ZM}}$$</p>
<p>$${2 \over {100}} = {8 \over {{R_L}}} + 10 \t... | integer | jee-main-2022-online-28th-june-evening-shift | 10,568 |
1l569qy6b | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode :</p> | [{"identifier": "A", "content": "It is two terminal device which conducts current in both directions."}, {"identifier": "B", "content": "It is two terminal device which conducts current in one direction only."}, {"identifier": "C", "content": "It does not conduct current gives an initial deflection which decays to zero... | ["B"] | null | <p>A diode is a two terminal device which conducts current in forward bias only.</p> | mcq | jee-main-2022-online-28th-june-morning-shift | 10,569 |
1l56wocrf | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>The cut-off voltage of the diodes (shown in figure) in forward bias is 0.6 V. The current through the resister of 40 $$\Omega$$ is __________ mA.</p>
<p> <img src="data:image/png;base64,UklGRg4JAABXRUJQVlA4IAIJAAAwggCdASoAA2gBP4G+1WY2LyunIRCJisAwCWlu+F+6/d8zICN+fn5ytLbPvuB3VfVuf6mQFyauQuGXq5C4YvNThZSFCozCegAXI0QXIar... | [] | null | 4 | <p>D<sub>1</sub> : conducting</p>
<p>D<sub>2</sub> : open circuit</p>
<p>$$i = {{1 - 0.6} \over {60 + 40}}A$$</p>
<p>$$ = {{0.4} \over {100}}A$$</p>
<p>$$ \Rightarrow i = 4$$ mA</p> | integer | jee-main-2022-online-27th-june-evening-shift | 10,570 |
1l58ca84j | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of 2 V and 4 V respectively, is :</p>
<p><img src="data:image/png;base64,UklGRo4TAABXRUJQVlA4IIITAADQ/ACdASoAAyMCP4HA22Q2MK2mo9KpUsAwCWlu/DqYhSUnZ19/r7/vf713... | [{"identifier": "A", "content": "1 : 2"}, {"identifier": "B", "content": "5 : 1"}, {"identifier": "C", "content": "1 : 40"}, {"identifier": "D", "content": "20 : 1"}] | ["B"] | null | <p>$$\therefore$$ $$R = {{\Delta v} \over {\Delta i}}$$</p>
<p>Now, dynamic resistance at $$V = 2V$$ is</p>
<p>$${R_2} = {{0.1} \over {5 \times {{10}^{ - 3}}}}\,\Omega $$</p>
<p>= 20 $$\Omega$$</p>
<p>Similarly,</p>
<p>$${R_4} = {{0.2} \over {50 \times {{10}^{ - 3}}}} = 4\,\Omega $$</p>
<p>$${{{R_2}} \over {{R_4}}} = {... | mcq | jee-main-2022-online-26th-june-morning-shift | 10,571 |
1l5bcikfr | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>In the given circuit, the value of current I<sub>L</sub> will be ____________ mA. (When R<sub>L</sub> = 1k$$\Omega$$)</p>
<p><img src="data:image/png;base64,UklGRl4JAABXRUJQVlA4IFIJAADQhACdASoAAzQBP4G812W2LqwnIXDJ0sAwCWlu4XHDMmNwvH51tIbPzuR+UGdfejt6ef2ZL///qrMhkHktAxX+C9tODNBTg5GpJ6vRHsy4w7xHgp3LLo6sXQDzwW5z3GbZB5LQ... | [] | null | 5 | <p>V<sub>L</sub> = 5 V as V<sub>Z</sub> = 5 V</p>
<p>$$\therefore$$ $${I_L} = {{{V_L}} \over {{R_L}}} = {5 \over {{{10}^3}}} = 5$$ mA</p> | integer | jee-main-2022-online-24th-june-evening-shift | 10,574 |
1l6f5q6ka | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>Two ideal diodes are connected in the network as shown in figure. The equivalent resistance between A and B is __________ $$\Omega$$.</p>
<p><img src="data:image/png;base64,UklGRn4NAABXRUJQVlA4IHINAADwuQCdASoAA6gBP4G41WY2LSmnIdB5asAwCWlu4W8D0mNwvV6OtD7Pnt1/cOORio+y7P97Nf//q0LQvC5Nai3PqCH1AN9XZ6Zrt6S+8ksyhwbZef+Fya1F... | [] | null | 25 | <p><img src="https://app-content.cdn.examgoal.net/fly/@width/image/1l6umqepi/fe39479c-d95b-43af-8227-7874e7b38bb7/54f46960-1c87-11ed-b633-f353ad3cb8e4/file-1l6umqepj.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1l6umqepi/fe39479c-d95b-43af-8227-7874e7b38bb7/54f46960-1c87-11ed-b633-f353ad3cb8e4... | integer | jee-main-2022-online-25th-july-evening-shift | 10,577 |
1l6gou5uq | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>In the circuit shown below, maximum zener diode current will be _________ $$\mathrm{mA}$$.</p>
<p><img src="data:image/png;base64,UklGRiAJAABXRUJQVlA4IBQJAABwgACdASoAAx4BP4HA2WQ2MKymolQJusAwCWlu4W2j+mNwvH6KtCbPHtx/guNfhDK/hiNEhh7dARbVUZSe+rgxjdC9Lixq0gACMOiGP+AHg5Bytpe1wnZnRIYe3PTwT79j4eAi3MAZ6e7UJ3609T+XFRgud8qmFtB... | [] | null | 9 | <p><img src="https://app-content.cdn.examgoal.net/fly/@width/image/1l6v6ttix/8bea00c0-22e4-4d68-8a9f-37b9d0539cd0/ea693a90-1cd5-11ed-843d-81ad9f680592/file-1l6v6ttiy.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1l6v6ttix/8bea00c0-22e4-4d68-8a9f-37b9d0539cd0/ea693a90-1cd5-11ed-843d-81ad9f680592... | integer | jee-main-2022-online-26th-july-morning-shift | 10,578 |
1l6mazipm | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>Identify the solar cell characteristics from the following options :</p> | [{"identifier": "A", "content": "<img src=\"https://app-content.cdn.examgoal.net/fly/@width/image/1l6qro8d2/65da6c3c-1d87-4bdc-b8d8-38d8f3e649ac/837b8f60-1a67-11ed-9fca-fdfa82878a71/file-1l6qro8d3.png?format=png\" data-orsrc=\"https://app-content.cdn.examgoal.net/image/1l6qro8d2/65da6c3c-1d87-4bdc-b8d8-38d8f3e649ac/837... | ["B"] | null | <p>Solar cell characteristics</p>
<p><img src="https://app-content.cdn.examgoal.net/fly/@width/image/1l6qroq32/3154c55f-3804-4f72-b2c1-82e2ba0eca7c/912c32e0-1a67-11ed-9fca-fdfa82878a71/file-1l6qroq33.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1l6qroq32/3154c55f-3804-4f72-b2c1-82e2ba0eca7c/91... | mcq | jee-main-2022-online-28th-july-morning-shift | 10,579 |
1l6p6iamg | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>If the potential barrier across a p-n junction is $$0.6 \mathrm{~V}$$. Then the electric field intensity, in the depletion region having the width of $$6 \times 10^{-6} \mathrm{~m}$$, will be __________ $$\times 10^{5} \mathrm{~N} / \mathrm{C}$$.</p> | [] | null | 1 | <p>$$E = {V \over d} = {{0.6} \over {6 \times {{10}^{ - 6}}}} = 1 \times {10^5}$$</p> | integer | jee-main-2022-online-29th-july-morning-shift | 10,580 |
1l6rixpt9 | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>A $$8 \mathrm{~V}$$ Zener diode along with a series resistance $$\mathrm{R}$$ is connected across a $$20 \mathrm{~V}$$ supply (as shown in the figure). If the maximum Zener current is $$25 \mathrm{~mA}$$, then the minimum value of R will be _______ $$\Omega$$.</p>
<p><img src="data:image/png;base64,UklGRhwIAABXRUJQV... | [] | null | 480 | <img src="https://app-content.cdn.examgoal.net/fly/@width/image/6y3zli1ltxsjig4/e4cab977-5eb1-40f9-af55-d66f481d2b8c/5f9dfe40-e59d-11ee-af4c-59af6a5599d5/file-6y3zli1ltxsjig5.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/6y3zli1ltxsjig4/e4cab977-5eb1-40f9-af55-d66f481d2b8c/5f9dfe40-e59d-11ee-af... | integer | jee-main-2022-online-29th-july-evening-shift | 10,581 |
1ldnwyq76 | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>Choose the correct statement about Zener diode :</p> | [{"identifier": "A", "content": "It works as a voltage regulator in reverse bias and behaves like simple pn junction diode in forward bias. "}, {"identifier": "B", "content": "It works as a voltage regulator in both forward and reverse bias."}, {"identifier": "C", "content": "It works as a voltage regulator only in for... | ["A"] | null | Option A is the correct statement about Zener diode. It works as a voltage regulator in reverse bias and behaves like a simple pn junction diode in forward bias. When a Zener diode is reverse-biased, it operates in the breakdown region, where a relatively constant voltage is maintained across the diode, regardless of t... | mcq | jee-main-2023-online-1st-february-evening-shift | 10,582 |
1ldof5th4 | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>Match List I with List II:</p>
<p><style type="text/css">
.tg {border-collapse:collapse;border-spacing:0;}
.tg td{border-color:black;border-style:solid;border-width:1px;font-family:Arial, sans-serif;font-size:14px;
overflow:hidden;padding:10px 5px;word-break:normal;}
.tg th{border-color:black;border-style:solid;b... | [{"identifier": "A", "content": "A-III, B-I, C-II, D-IV"}, {"identifier": "B", "content": "A-II, B-I, C-III, D-IV"}, {"identifier": "C", "content": "A-I, B-II, C-III, D-IV"}, {"identifier": "D", "content": "A-II, B-III, C-I, D-IV"}] | ["D"] | null | (A) Intrinsic semiconductor $\rightarrow$ II
<br/><br/>(B) n-type semiconductor $\rightarrow$ III
<br/><br/>(C) p-type semiconductor $\rightarrow 1$
<br/><br/>(D) Metals $\rightarrow$ IV | mcq | jee-main-2023-online-1st-february-morning-shift | 10,583 |
1ldspis14 | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>Which one of the following statement is <b>not</b> correct in the case of light emitting diodes?</p>
<p>A. It is a heavily doped p-n junction.</p>
<p>B. It emits light only when it is forward biased.</p>
<p>C. It emits light only when it is reverse biased.</p>
<p> D. The energy of the light emitted is equal to or sl... | [{"identifier": "A", "content": "A"}, {"identifier": "B", "content": "B"}, {"identifier": "C", "content": "C and D"}, {"identifier": "D", "content": "C"}] | ["D"] | null | The correct answer is C. It is not correct that a light-emitting diode (LED) emits light only when it is reverse biased. In fact, an LED emits light only when it is forward biased, which is stated correctly in option B.
<br/><br/>Option A is also correct, as an LED is indeed a heavily doped p-n junction. Option D is a... | mcq | jee-main-2023-online-29th-january-morning-shift | 10,585 |
1ldycd6au | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R</p>
<p>Assertion A : Photodiodes are preferably operated in reverse bias condition for light intensity measurement.</p>
<p>Reason R : The current in the forward bias is more than the current in the reverse bias for ... | [{"identifier": "A", "content": "Both A and R are true and R is the correct explanation of A"}, {"identifier": "B", "content": "A is false but R is true"}, {"identifier": "C", "content": "A is true but R is false"}, {"identifier": "D", "content": "Both A and R are true but R is NOT the correct explanation of A"}] | ["D"] | null | Photodiodes are preferably operated in reverse
bias condition for light intensity measurement
because it increases the width of depletion layer,
therefore both are correct but not the correct
explanation. | mcq | jee-main-2023-online-24th-january-morning-shift | 10,588 |
lgnxzec1 | physics | electronic-devices | semiconductor-and-p-n-junction-diode | In the given circuit, the current (I) through the battery will be<br/><br/>
<img src="data:image/png;base64,UklGRtoUAABXRUJQVlA4IM4UAAAwEQGdASoAAzACP4G+2WQ2MCymotN5usAwCWlu5VMROU1tT+nyU4fRP/I3ZdXFhv+I8P+zR237pnAKgC+/foAw/3sz//+nH79Fb9MO5cxvl1DcuYz35ht5CERiwn7BGnL5Cj1ZnBZ/OPqDXvju1YwKg2aEyS9wJPHD3T4o80wx5phjzTDHmmGKT6eQ... | [{"identifier": "A", "content": "1A"}, {"identifier": "B", "content": "$2.5 \\mathrm{~A}$"}, {"identifier": "C", "content": "$2 \\mathrm{~A}$"}, {"identifier": "D", "content": "$1.5 \\mathrm{~A}$"}] | ["D"] | null | In the circuit $\mathrm{D}_1$ and $\mathrm{D}_3$ are forward biased and $\mathrm{D}_2$ is reverse biased.<br><br>
<img src="https://app-content.cdn.examgoal.net/fly/@width/image/1lgrhdw4r/e8ffc3f1-b2d2-4f88-a9c8-31b798dd071b/3b171bb0-e0c6-11ed-bc46-2ff4981b0558/file-1lgrhdw4s.png?format=png" data-orsrc="https://app-con... | mcq | jee-main-2023-online-15th-april-morning-shift | 10,589 |
1lgvr524g | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>If each diode has a forward bias resistance of $$25 ~\Omega$$ in the below circuit,</p>
<p><img src="data:image/png;base64,UklGRnQUAABXRUJQVlA4IGgUAAAwLgGdASoAA9oCP4G+2GU2L6ypIlEJosAwCWlu/BPuMKGmS/9iaLt/zT/K+iD5x232cZwPuh3WvVGhjetaAPv/6GcPl7Q///q2++xOKqv7IPJZPjMOnrKTwTCvCk8loVMM1+yDyWhUwzX7IPHHucNVRmAO7VF+RbwG54HEGY... | [{"identifier": "A", "content": "$$\\frac{I_{3}}{I_{4}}=1$$"}, {"identifier": "B", "content": "$$\\frac{\\mathrm{I}_{1}}{\\mathrm{I}_{2}}=2$$"}, {"identifier": "C", "content": "$$\\frac{I_{2}}{\\mathrm{I}_{3}}=1$$"}, {"identifier": "D", "content": "$$\\frac{I_{1}}{I_{2}}=1$$"}] | ["B"] | null | <img src="https://app-content.cdn.examgoal.net/fly/@width/image/1lib8ra0m/aeb12d78-03d0-4bab-b7d1-da35b543de49/618a3160-ff70-11ed-9ba6-21b4d8b62881/file-1lib8ra0n.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1lib8ra0m/aeb12d78-03d0-4bab-b7d1-da35b543de49/618a3160-ff70-11ed-9ba6-21b4d8b62881/fi... | mcq | jee-main-2023-online-10th-april-evening-shift | 10,590 |
1lgyfdstf | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>A zener diode of power rating 1.6 W is to be used as voltage regulator. If the zener diode has a breakdown of 8V and it has to regulate voltage fluctuating between 3 V and 10 V. The value of resistance R<sub>s</sub> for safe operation of diode will be</p>
<p><img src="data:image/png;base64,UklGRpIOAABXRUJQVlA4IIYOAA... | [{"identifier": "A", "content": "13 $$\\Omega$$"}, {"identifier": "B", "content": "13.3 $$\\Omega$$"}, {"identifier": "C", "content": "10 $$\\Omega$$"}, {"identifier": "D", "content": "12 $$\\Omega$$"}] | ["C"] | null | <img src="https://app-content.cdn.examgoal.net/fly/@width/image/6y3zli1loi4yuu3/f13a5540-e704-44ac-bafb-671374c2a5c7/5896a6b0-7a04-11ee-bbdd-cfc3c972af88/file-6y3zli1loi4yuu4.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/6y3zli1loi4yuu3/f13a5540-e704-44ac-bafb-671374c2a5c7/5896a6b0-7a04-11ee-bb... | mcq | jee-main-2023-online-10th-april-morning-shift | 10,591 |
1lh2zx3wy | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R</p>
<p>Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.</p>
<p>Reason R: Diffusion current in a p-n junction is from the $$\mathrm{n}$... | [{"identifier": "A", "content": "Both A and R are correct but R is NOT the correct explanation of A"}, {"identifier": "B", "content": "A is correct but R is not correct"}, {"identifier": "C", "content": "A is not correct but R is correct"}, {"identifier": "D", "content": "Both A and R are correct and R is the correct e... | ["B"] | null | A p-n junction consists of a p-type semiconductor (which has an excess of holes) in contact with an n-type semiconductor (which has an excess of electrons). In a forward-biased p-n junction, an external voltage is applied such that the positive terminal is connected to the p-side and the negative terminal is connected ... | mcq | jee-main-2023-online-6th-april-evening-shift | 10,593 |
lsan382k | physics | electronic-devices | semiconductor-and-p-n-junction-diode | To measure the temperature coefficient of resistivity $\alpha$ of a semiconductor, an electrical arrangement shown in the figure is prepared. The arm BC is made up of the semiconductor. The experiment is being conducted at $25^{\circ} \mathrm{C}$ and resistance of the semiconductor arm is $3 \mathrm{~m} \Omega$. Arm $\... | [{"identifier": "A", "content": "$-1 \\times 10^{-2}{ }^{\\circ} \\mathrm{C}^{-1}$"}, {"identifier": "B", "content": "$-2 \\times 10^{-2}{ }^{\\circ} \\mathrm{C}^{-1}$"}, {"identifier": "C", "content": "$-2.5 \\times 10^{-2}{ }^{\\circ} \\mathrm{C}^{-1}$"}, {"identifier": "D", "content": "$-1.5 \\times 10^{-2}{ }^{\\ci... | ["A"] | null | For no deflection $\frac{0.8}{1}=\frac{R}{3}$
<br/><br/>$$
\Rightarrow \mathrm{R}=2.4 \mathrm{~m} \Omega
$$
<br/><br/>Temperature fall in $10 \mathrm{~s}=20^{\circ} \mathrm{C}$
<br/><br/>$$
\begin{aligned}
& \Delta \mathrm{R}=\mathrm{R} \alpha \Delta \mathrm{t} \\\\
& \alpha=\frac{\Delta \mathrm{R}}{\mathrm{R} \Delta ... | mcq | jee-main-2024-online-1st-february-evening-shift | 10,594 |
lsble8rg | physics | electronic-devices | semiconductor-and-p-n-junction-diode | In the given circuit if the power rating of Zener diode is $10 \mathrm{~mW}$, the value of series resistance $R_s$ to regulate the input unregulated supply is :<br/><br/>
<img src="data:image/png;base64,UklGRuYIAABXRUJQVlA4INoIAACwegCdASoAAywBP4G61mW2LawnIZBpwsAwCWlu4WrjqmNwvV5rtR7PvtblxxEe6W//vUCZViL8aFRfMhb5MjXbX1RLH... | [{"identifier": "A", "content": "$10 \\mathrm{k} \\Omega$"}, {"identifier": "B", "content": "$10 \\Omega$"}, {"identifier": "C", "content": "$1 \\mathrm{k} \\Omega$"}, {"identifier": "D", "content": "$$ \\frac{3}{7} \\mathrm{k} \\Omega<\\mathrm{R}_{\\mathrm{s}}<\\frac{3}{5} \\mathrm{k} \\Omega$$"}] | ["D"] | null | <img src="https://app-content.cdn.examgoal.net/fly/@width/image/6y3zli1lsrmwwr0/effd390e-f450-41c2-a91f-014110fc7249/722250c0-ce6e-11ee-991d-5322ace9b43e/file-6y3zli1lsrmwwr1.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/6y3zli1lsrmwwr0/effd390e-f450-41c2-a91f-014110fc7249/722250c0-ce6e-11ee-99... | mcq | jee-main-2024-online-1st-february-morning-shift | 10,595 |
jaoe38c1lsc3776v | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>Which of the following circuits is reverse - biased?</p>
<p></p> | [{"identifier": "A", "content": "<img src=\"https://app-content.cdn.examgoal.net/fly/@width/image/6y3zli1lscu01pj/f618670d-38be-4444-940a-d84af3e39812/678e4280-c64a-11ee-9d8b-f1be86a1b2f3/file-6y3zli1lscu01pk.png?format=png\" data-orsrc=\"https://app-content.cdn.examgoal.net/image/6y3zli1lscu01pj/f618670d-38be-4444-940... | ["D"] | null | <p>$$\mathrm{P}$$ end should be at higher potential for forward biasing.</p> | mcq | jee-main-2024-online-27th-january-morning-shift | 10,596 |
jaoe38c1lsf1s97s | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>In the given circuit, the breakdown voltage of the Zener diode is $$3.0 \mathrm{~V}$$. What is the value of $$\mathrm{I}_{\mathrm{z}}$$ ?</p>
<p><img src="data:image/png;base64,UklGRuALAABXRUJQVlA4INQLAADQwQCdASoAA/0BP4HA2mS2ML+nIdPpk/AwCWlu4XHCpmNwvV6WjdXc7NACINv5tCKCvzPZXIvyq+hOX/WvwW6e0CsNdYM9lci/K5F+VyL8hfb5Wny+... | [{"identifier": "A", "content": "3.3 mA"}, {"identifier": "B", "content": "10 mA"}, {"identifier": "C", "content": "5.5 mA"}, {"identifier": "D", "content": "7 mA"}] | ["C"] | null | <p><img src="https://app-content.cdn.examgoal.net/fly/@width/image/1lt2saq9l/d2272837-507b-46bc-a645-f1cefcdc9fae/1f3e4da0-d490-11ee-9383-19a774a872fb/file-1lt2saq9m.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1lt2saq9l/d2272837-507b-46bc-a645-f1cefcdc9fae/1f3e4da0-d490-11ee-9383-19a774a872fb... | mcq | jee-main-2024-online-29th-january-morning-shift | 10,597 |
1lsg5hmsr | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p><img src="data:image/png;base64,UklGRmIJAABXRUJQVlA4IFYJAAAwggCdASoAAykBP4HA2mQ2MK0morNpisAwCWlu4W2j0mNwvH6BtH7NvtrmCG//PzM7jssqpfsgA39kAG/sf+VtufztkiTx1eiK9MmG87h9ZmebF+dllVLUhz1bm7VQZgDnq3N2qgyGj8KPv+uqtWlUGscab107FsLKQY35kUpIn6VZXC/4LOdxcxdqoMwGOjAHPVubtUy96eQu1gHBd0PvgVuDzayZJDMawknmm3SKW8SWZFyfdHMdX3uESXsOPQeTF... | [{"identifier": "A", "content": "8.75 V"}, {"identifier": "B", "content": "9.00 V"}, {"identifier": "C", "content": "8.50 V"}, {"identifier": "D", "content": "14.00 V"}] | ["A"] | null | <p><img src="https://app-content.cdn.examgoal.net/fly/@width/image/6y3zli1lsoiusgl/8457d265-c9b5-44d9-adb2-693cf7dc0d9d/38bccc50-ccb8-11ee-8ef5-472d1767d2da/file-6y3zli1lsoiusgm.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/6y3zli1lsoiusgl/8457d265-c9b5-44d9-adb2-693cf7dc0d9d/38bccc50-ccb8-11ee... | mcq | jee-main-2024-online-30th-january-evening-shift | 10,598 |
1lsgdmrpl | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>A Zener diode of breakdown voltage $$10 \mathrm{~V}$$ is used as a voltage regulator as shown in the figure. The current through the Zener diode is :</p>
<p><img src="data:image/png;base64,UklGRuYIAABXRUJQVlA4INoIAAAQjACdASoAA3gBP4HA2mU2MC0nIbMJUsAwCWlu4W8DgmNwvV6XjhPWR793q5wFvHVU3/+eqIp51SY0bm2R5GVvY1sOzKl+SF4EoCmz... | [{"identifier": "A", "content": "0"}, {"identifier": "B", "content": "30 mA"}, {"identifier": "C", "content": "20 mA"}, {"identifier": "D", "content": "50 mA"}] | ["B"] | null | <p><img src="https://app-content.cdn.examgoal.net/fly/@width/image/6y3zli1lsqm8ndf/1dbfaeed-43ad-4771-8e24-ce5fe7ea4306/06d24a30-cddf-11ee-a0d3-7b75c4537559/file-6y3zli1lsqm8ndg.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/6y3zli1lsqm8ndf/1dbfaeed-43ad-4771-8e24-ce5fe7ea4306/06d24a30-cddf-11ee... | mcq | jee-main-2024-online-30th-january-morning-shift | 10,599 |
luxwer1f | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>The $$I$$-$$V$$ characteristics of an electronic device shown in the figure. The device is :</p>
<p><img src="data:image/png;base64,UklGRhgJAABXRUJQVlA4IAwJAACwpgCdASoAA08CP4HA3mY2MS6poRM4wsAwCWlu8o9eIrDiN+fb6MtM4+m93T/9EEyZ8mI0zRxizvY1y0MBICYWd7GupQHoRo4xZ3sa6lAehGjjFmYWNFAgjID0I0cYs72NdSgPQjRxizvY11KAgPpUOmz9YPAz/... | [{"identifier": "A", "content": "a solar cell\n"}, {"identifier": "B", "content": "a transistor which can be used as an amplifier\n"}, {"identifier": "C", "content": "a diode which can be used as a rectifier\n"}, {"identifier": "D", "content": "a zener diode which can be used as a voltage regulator"}] | ["D"] | null | <p>As this is a reverse bias characteristic. It should be for Zener diode working as voltage regulator.</p> | mcq | jee-main-2024-online-9th-april-evening-shift | 10,600 |
luy9cm5p | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>A light emitting diode (LED) is fabricated using GaAs semiconducting material whose band gap is $$1.42 \mathrm{~eV}$$. The wavelength of light emitted from the LED is :</p> | [{"identifier": "A", "content": "1243 nm"}, {"identifier": "B", "content": "875 nm"}, {"identifier": "C", "content": "650 nm"}, {"identifier": "D", "content": "1400 nm"}] | ["B"] | null | <p>The wavelength of light emitted by a Light Emitting Diode (LED) fabricated using a semiconducting material can be determined by the energy band gap of the material. The energy of the photon emitted, which corresponds to the band gap energy, is given by the equation:</p>
<p>$$E = \frac{hc}{\lambda}$$</p>
<p>Where:<... | mcq | jee-main-2024-online-9th-april-morning-shift | 10,601 |
lv0vyuvt | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>The value of net resistance of the network as shown in the given figure is :</p>
<p><img src="data:image/png;base64,UklGRhQMAABXRUJQVlA4IAgMAADwqQCdASoAA5QBP4HA22S2MS2nIlM5csAwCWlu4W5SamNwvV6PtFbRLu//ge+361UCTvFVMf//qfMRLkXyXIvj+L3ZjIpls2I+VCr64Zc3eQbzjN85uXjXV/xpXIvkuRfJci9vWWq1Wq1Wq0FIA71vZDIj1lS2wAoXpw4ild9prejc6... | [{"identifier": "A", "content": "$$(30 / 11) \\Omega$$\n"}, {"identifier": "B", "content": "$$6 \\Omega$$\n"}, {"identifier": "C", "content": "$$(5 / 2) \\Omega$$\n"}, {"identifier": "D", "content": "$$(15 / 4) \\Omega$$"}] | ["B"] | null | <p><img src="https://app-content.cdn.examgoal.net/fly/@width/image/1lwkd84wi/74f38ab5-62c3-4b8a-bddd-2690f23688ca/f002e230-199f-11ef-aa4f-494cd5f40ef0/file-1lwkd84wj.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1lwkd84wi/74f38ab5-62c3-4b8a-bddd-2690f23688ca/f002e230-199f-11ef-aa4f-494cd5f40ef0... | mcq | jee-main-2024-online-4th-april-morning-shift | 10,602 |
lv2es3ds | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>Which of the diode circuit shows correct biasing used for the measurement of dynamic resistance of p-n junction diode :</p> | [{"identifier": "A", "content": "<img src=\"https://app-content.cdn.examgoal.net/fly/@width/image/1lv1rqkk4/e2e8ac5d-a47d-4380-8846-10747fd0ae40/94c26540-fb99-11ee-aecf-73c37d9c3a58/file-1lv1rqkk5.png?format=png\" data-orsrc=\"https://app-content.cdn.examgoal.net/image/1lv1rqkk4/e2e8ac5d-a47d-4380-8846-10747fd0ae40/94c... | ["D"] | null | <p>In the given diagram, only the diode given in
option (D) is forward bias, so this circuit can be
used to measure dynamic resistance of p-n junction
diode.</p> | mcq | jee-main-2024-online-4th-april-evening-shift | 10,603 |
lvb295bj | physics | electronic-devices | semiconductor-and-p-n-junction-diode | <p>The acceptor level of a p-type semiconductor is $$6 \mathrm{~eV}$$. The maximum wavelength of light which can create a hole would be : Given $$\mathrm{hc}=1242 \mathrm{~eV} \mathrm{~nm}$$.</p> | [{"identifier": "A", "content": "407 nm"}, {"identifier": "B", "content": "103.5 nm"}, {"identifier": "C", "content": "414 nm"}, {"identifier": "D", "content": "207 nm"}] | ["D"] | null | <p>The energy required to create a hole in a p-type semiconductor can be directly related to the acceptor level because this energy level represents the minimum energy required to excite an electron from the valence band into the acceptor level, effectively creating a hole. The acceptor level is given as $$6 \, \text{e... | mcq | jee-main-2024-online-6th-april-evening-shift | 10,605 |
FtygbvHxfeTjC9NT | physics | electronic-devices | transistors | The part of a transistor which is most heavily doped to produce large number of majority carriers is | [{"identifier": "A", "content": "emmiter "}, {"identifier": "B", "content": "base "}, {"identifier": "C", "content": "collector "}, {"identifier": "D", "content": "can be any of the above three"}] | ["A"] | null | Emitter sends the majority charge carries towards the collector. Therefore emitter is most heavily doped. | mcq | aieee-2002 | 10,606 |
CrEmDgRD1fKHwy9r | physics | electronic-devices | transistors | When $$npn$$ transistor is used as an amplifer | [{"identifier": "A", "content": "electrons move from collector to base "}, {"identifier": "B", "content": "holes move from emitter to base "}, {"identifier": "C", "content": "electrons move from base to collector"}, {"identifier": "D", "content": "holes move from base to emitter "}] | ["C"] | null | Electrons move from base to emmitter. | mcq | aieee-2004 | 10,607 |
J6ku1wdJ6dkpqQif | physics | electronic-devices | transistors | For a transistor amplifier in common emitter configuration for load impedance of $$1k\,\Omega $$ $$\left( {{h_{fe}} = 50} \right.$$ and $$\left. {{h_{oe}} = 25} \right)$$ the current gain is | [{"identifier": "A", "content": "$$-24.8$$ "}, {"identifier": "B", "content": "$$-15.7$$ "}, {"identifier": "C", "content": "$$-5.2$$ "}, {"identifier": "D", "content": "$$-48.78$$ "}] | ["D"] | null | In common emitter configuration current gain
<br><br>$${A_i} = {{ - h{f_e}} \over {1 + {b_{0c}}{R_L}}}$$
<br><br>$$ = {{ - 50} \over {1 + 25 \times {{10}^{ - 6}} \times 1 \times {{10}^3}}}$$
<br><br>$$ = - 48.78$$ | mcq | aieee-2004 | 10,608 |
fUATvH2PU7Xyf6TQ | physics | electronic-devices | transistors | In a common base mode of a transistor, the collector current is $$5.488$$ $$mA$$ for an emitter current of $$5.60mA.$$ The value of the base current amplification factor $$\left( \beta \right)$$ will be | [{"identifier": "A", "content": "$$49$$ "}, {"identifier": "B", "content": "$$50$$ "}, {"identifier": "C", "content": "$$51$$ "}, {"identifier": "D", "content": "$$48$$ "}] | ["A"] | null | $${I_C} = 5.488\,mA,\,\,{I_e} = 5.6\,mA,\,{I_B} = {I_E} - {I_C}$$
<br><br>$$\beta = {{{I_c}} \over {{I_B}}} = {{5.488} \over {5.6 - 5.485}} = 49$$ | mcq | aieee-2006 | 10,610 |
XP82ezFnHkVCrrU7 | physics | electronic-devices | transistors | A working transistor with its three legs marked $$P,Q$$ and $$R$$ is tested using a multi-meter. No conduction is found between $$P$$ and $$Q$$. By connecting the common (negative) terminal of the multi-meter to $$R$$ and the other (positive) terminal to $$P$$ or $$Q,$$ some resistance is seen on the multi-meter. Which... | [{"identifier": "A", "content": "It is an $$npn$$ transistor with $$R$$ as base "}, {"identifier": "B", "content": "It is an $$pnp$$ transistor with $$R$$ as collector"}, {"identifier": "C", "content": "It is an $$pnp$$ transistor with $$R$$ as emitter "}, {"identifier": "D", "content": "It is an $$npn$$ transistor wit... | ["A"] | null | It is a $$n$$-$$p$$-$$n$$ transistor with $$R$$ as base. | mcq | aieee-2008 | 10,611 |
iAQxY9VjFJHpHEwbQLcYT | physics | electronic-devices | transistors | A realistic graph depicting the variation of the reciprocal of input resistance in an input characteristics measurement in a commonemitter
transistor configuration is : | [{"identifier": "A", "content": "<img src=\"https://app-content.cdn.examgoal.net/fly/@width/image/1l82xqh4r/243ca0e5-9adc-4a84-a811-7bb965b6e3b8/d7d287c0-34e4-11ed-b84c-a3c7c2456516/file-1l82xqh4s.png?format=png\" data-orsrc=\"https://app-content.cdn.examgoal.net/image/1l82xqh4r/243ca0e5-9adc-4a84-a811-7bb965b6e3b8/d7d... | ["C"] | null | <img src="https://app-content.cdn.examgoal.net/fly/@width/image/1l82xrwbw/4846edcf-5e3d-45f9-ac6d-07939459065f/ff5f0ac0-34e4-11ed-b84c-a3c7c2456516/file-1l82xrwbx.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1l82xrwbw/4846edcf-5e3d-45f9-ac6d-07939459065f/ff5f0ac0-34e4-11ed-b84c-a3c7c2456516/fi... | mcq | jee-main-2016-online-10th-april-morning-slot | 10,613 |
TeNbRRJF9fQUAoRi7Qiue | physics | electronic-devices | transistors | An unknown transistor needs to be identified as a <i>npn</i> or <i>pnp</i> type. A multimeter, with + ve and − ve terminals, is used to measure resistance between different terminals of transistor. If terminal 2 is the base of the transistor then which of the following is correct for a pnp transistor ? | [{"identifier": "A", "content": "+ ve termial 1, $$-$$ve terminal 2, resistance high"}, {"identifier": "B", "content": "+ ve termial 2, $$-$$ve terminal 1, resistance high"}, {"identifier": "C", "content": "+ ve termial 3, $$-$$ve terminal 2, resistance high"}, {"identifier": "D", "content": "+ ve termial 2, $$-$$v... | ["A"] | null | <img src="https://res.cloudinary.com/dckxllbjy/image/upload/v1734265236/exam_images/apllg3zofsznrk6kgtfe.webp" style="max-width: 100%; height: auto;display: block;margin: 0 auto;" loading="lazy" alt="JEE Main 2016 (Online) 9th April Morning Slot Physics - Semiconductor Question 159 English Explanation">
<br><br>+ ve t... | mcq | jee-main-2016-online-9th-april-morning-slot | 10,614 |
PFM8bWZXLyl55GVp | physics | electronic-devices | transistors | For a common emitter configuration, if $$\alpha $$ and $$\beta $$ have their usual meanings, the incorrect relationship between $$\alpha $$ and $$\beta $$ is : | [{"identifier": "A", "content": "$$\\alpha = {\\beta \\over {1 + \\beta }}$$ "}, {"identifier": "B", "content": "$$\\alpha = {{{\\beta ^2}} \\over {1 + {\\beta ^2}}}$$ "}, {"identifier": "C", "content": "$${1 \\over \\alpha } = {1 \\over \\beta } + 1$$ "}, {"identifier": "D", "content": "$$\\alpha = {\\beta \\over... | null | null | We know, collector current is given as $${I_C} = \beta {I_B}$$<br><br>
Also, $${I_C} = \alpha {I_E}$$<br><br>
Using, $${I_E} = {I_B} + {I_C}$$<br><br>
$${{{I_C}} \over \alpha } = {{{I_C}} \over \beta } + {I_C}$$<br><br>
Solving above equations,<br><br>
$${1 \over \alpha } = {1 \over \beta } + 1$$ <br><br>
$$\alpha = ... | mcqm | jee-main-2016-offline | 10,615 |
59pAEl5h118hJxwNw8EhE | physics | electronic-devices | transistors | The current gain of a common emitter amplifier is 69. If the emitter current is 7.0 mA, collector current is : | [{"identifier": "A", "content": "9.6 mA"}, {"identifier": "B", "content": "6.9 mA"}, {"identifier": "C", "content": "0.69 mA"}, {"identifier": "D", "content": "69 mA"}] | ["B"] | null | Here, $$\beta $$ = 69, I<sub>e</sub>
= 7 mA, I<sub>c</sub>
= ?
<br><br>$$\alpha $$ = $${\beta \over {1 + \beta }}$$ = $${{69} \over {70}}$$
<br><br>Also, $$\alpha $$ = $${{{I_c}} \over {{I_e}}}$$
<br><br>$$ \Rightarrow $$ $${{69} \over {70}} = {{{I_c}} \over 7}$$
<br><br>$$ \Rightarrow $$ I<sub>c</sub> = $${{69} \ov... | mcq | jee-main-2017-online-9th-april-morning-slot | 10,616 |
Ixwa3JfkZDmUX1IN | physics | electronic-devices | transistors | In a common emitter amplifier circuit using an n-p-n transistor, the phase difference between the input and
the output voltages will be: | [{"identifier": "A", "content": "180\u00b0"}, {"identifier": "B", "content": "45\u00b0"}, {"identifier": "C", "content": "90\u00b0"}, {"identifier": "D", "content": "135\u00b0"}] | ["A"] | null | In common emitter configuration for n-p-n transistor
input and output signals are 180° out of phase i.e., phase
difference between output and input voltage is 180°. | mcq | jee-main-2017-offline | 10,617 |
REjfwmDqhbUcNDwTpsaeH | physics | electronic-devices | transistors | In a common emitter configuration with suitable bias, it is given that $${R_L}$$ is the load resistance and $${R_{BE}}$$ is small signal dynamic resistance (input side). Then, voltage gain, current gain and power gain are given, respectively, by :
<br/><br/>$$\beta $$ is curret gain, $${{\rm I}_B},{{\rm I}_C}$$ and ... | [{"identifier": "A", "content": "$$\\beta {{{R_L}} \\over {{R_{BE}}}},{{\\Delta {{\\rm I}_C}} \\over {\\Delta {{\\rm I}_B}}},{\\beta ^2}{{{R_L}} \\over {{R_{BE}}}}$$"}, {"identifier": "B", "content": "$$\\beta {{{R_L}} \\over {{R_{BE}}}},{{\\Delta {{\\rm I}_E}} \\over {\\Delta {{\\rm I}_B}}},{\\beta ^2}{{{R_L}} \\over ... | ["A"] | null | Current gain ($$\beta $$) = $${{\Delta \,{I_C}} \over {\Delta {I_B}}}$$
<br><br>Voltage gain = $${{{V_{CE}}} \over {{V_{BE}}}} = \beta {{{R_L}} \over {{R_{BE}}}}$$
<br><br>Power gain = voltage gain x current gain = $${\beta ^2}{{{R_L}} \over {{R_{BE}}}}$$ | mcq | jee-main-2018-online-15th-april-morning-slot | 10,618 |
KVSPIGOPJ635FTlvRbCC2 | physics | electronic-devices | transistors | A common emitter amplifier circuit, built using
an npn transistor, is shown in the figure. Its dc
current gain is 250, R<sub>C</sub> = 1k$$\Omega$$ and V<sub>CC</sub> = 10 V.
What is the minimum base current for V<sub>CE</sub> to
reach saturation ?
<img src="data:image/png;base64,UklGRswHAABXRUJQVlA4IMAHAABQUwCdASrsAvM... | [{"identifier": "A", "content": "100 $$\\mu $$A"}, {"identifier": "B", "content": "7 $$\\mu $$A"}, {"identifier": "C", "content": "10 $$\\mu $$A"}, {"identifier": "D", "content": "40 $$\\mu $$A"}] | ["D"] | null | At saturation state, V<sub>CE</sub> becomes zero<br><br>
$$ \Rightarrow $$ i<sub>C</sub> = $${{10V} \over {1000\Omega }} = 10\,mA$$<br><br>
Now current gain factor $$\beta = {{{i_C}} \over {{i_B}}}$$<br><br>
$$ \Rightarrow $$ i<sub>B</sub> = $${{10\, mA} \over {250 }} = 40\,\mu A$$ | mcq | jee-main-2019-online-8th-april-evening-slot | 10,620 |
0tv7BChyS4MV1jSnIU18hoxe66ijvzthxg5 | physics | electronic-devices | transistors | An n-p-n transistor operates as a common emitter
amplifier, with a power gain of 60 dB. The input
circuit resistance is 100$$\Omega $$ and the output load
resistance is 10 k$$\Omega $$. The common emitter
current gain $$\beta $$ is : | [{"identifier": "A", "content": "10<sup>4</sup>"}, {"identifier": "B", "content": "10<sup>2</sup>"}, {"identifier": "C", "content": "6 \u00d7 10<sup>2</sup>"}, {"identifier": "D", "content": "60"}] | ["B"] | null | $${A_v} \times \beta = {P_{gain}}$$<br><br>
$$60 = 10{\log _{10}}\left( {{P \over {{P_0}}}} \right)$$<br><br>
$$P = {10^6} = {\beta ^2} \times {{{R_{out}}} \over {{R_{in}}}}$$<br>
$$ = {\beta ^2} \times {{{{10}^4}} \over {100}}$$<br><br>
$${\beta ^2} = {10^4};\beta = 100$$ | mcq | jee-main-2019-online-10th-april-morning-slot | 10,622 |
h9zM8QMihGb8V2DtL9jgy2xukg0jypo4 | physics | electronic-devices | transistors | The output characteristics of a transistor is shown in the figure. <br/>When V<sub>CE</sub> is 10V and I<sub>C</sub>
= 4.0 mA,
then value of $$\beta $$<sub>ac</sub>
is __________.
<img src="data:image/png;base64,UklGRqw1AABXRUJQVlA4IKA1AABQ4wCdASr0ASIBPm0ylUakIyIhKXK7mIANiWlu+F8U/I+zEuaHZIFum2JQPh/+gf0L9YPeH8V/Q/6v/X... | [] | null | 150 | We know, $$\beta $$<sub>ac</sub> = $${{\Delta {I_C}} \over {\Delta {I_B}}}$$
<br><br>$$\Delta $$I<sub>B</sub> = (30 - 20) = 10 $$\mu $$A
<br><br>$$\Delta $$I<sub>C</sub> = (4.5 - 3) = 1.5 mA
<br><br>$$ \therefore $$ $$\beta $$<sub>ac</sub> = $${{1.5 \times {{10}^{ - 3}}} \over {10 \times {{10}^{ - 6}}}}$$ = 150 | integer | jee-main-2020-online-6th-september-evening-slot | 10,624 |
ANrqAECBtZtOo0iEqb1klriaa5g | physics | electronic-devices | transistors | If an emitter current is changed by 4 mA, the collector current changes by 3.5 mA. The value of $$\beta$$ will be : | [{"identifier": "A", "content": "0.875"}, {"identifier": "B", "content": "0.5"}, {"identifier": "C", "content": "3.5"}, {"identifier": "D", "content": "7"}] | ["D"] | null | Given, emitter current, I<sub>E</sub> = 4 mA<br/><br/>Collector current, I<sub>C</sub> = 3.5 mA<br/><br/>Current gain in common base amplifier,<br/><br/>$$\alpha = {{{I_C}} \over {{I_E}}}$$<br/><br/>$$ \Rightarrow \alpha = {{3.5} \over 4} = {7 \over 8}$$<br/><br/>Also, current gain in common emitter amplifier, <br/><... | mcq | jee-main-2021-online-24th-february-morning-slot | 10,625 |
rzMuuflWsgCHPNprHb1klro6ukk | physics | electronic-devices | transistors | Given below are two statements :<br/><br/>Statement I : PN junction diodes can be used to function as transistor, simply by connecting two diodes, back to back, which acts as the base terminal.<br/><br/>Statement II : In the study of transistor, the amplification factor $$\beta$$ indicates ratio of the collector curren... | [{"identifier": "A", "content": "Both Statement I and Statement II are false"}, {"identifier": "B", "content": "Statement I is false but Statement II is true"}, {"identifier": "C", "content": "Both Statement I and Statement II are true"}, {"identifier": "D", "content": "Statement I is true but Statement II is false"}] | ["B"] | null | <b>S-1 :</b><br><br>Statement 1 is false because in case of two discrete back to back connected diodes, there are four doped regions instead of three and there is nothing that resembles a thin base region between an emitter and a collector.<br><br><b>S-2 :</b><br><br>Statement-2 is true, as we know that, amplification ... | mcq | jee-main-2021-online-24th-february-evening-slot | 10,626 |
MlAr3DwjFj95NxmmKx1kmks1wg3 | physics | electronic-devices | transistors | An npn transistor operates as a common emitter amplifier with a power gain of 10<sup>6</sup>. The input circuit resistance is 100$$\Omega$$ and the output load resistance is 10 K$$\Omega$$. The common emitter current gain '$$\beta$$' will be ________. (Round off to the Nearest Integer). | [] | null | 100 | Power gain = 10<sup>6</sup><br><br>Input resistance = 100$$\Omega$$<br><br>Output load resistance = 10K$$\Omega$$<br><br>Power gain = $${\beta^2} \times {{{r_{out}}} \over {{R_{in}}}}$$<br><br>$$ \Rightarrow $$ $${10^6} = {\beta ^2} \times {{10 \times {{10}^3}} \over {100}}$$<br><br>$$ \Rightarrow $$ $$\beta$$<sup>2</s... | integer | jee-main-2021-online-18th-march-morning-shift | 10,627 |
PKJOApvYSD8pV27oJa1kmlwuu01 | physics | electronic-devices | transistors | The typical output characteristics curve for a transistor working in the common-emitter configuration is shown in the figure.<br/><br/><img src="data:image/png;base64,UklGRkgTAABXRUJQVlA4IDwTAABQaQCdASqNARQBPm0ylkkkIqIhIZDKaIANiWlu/HA4hs1tf0Dwnq/Cv8i8CP6P/Vvys/rnkL+g/sP5O/2j/w79Nqj9Of4L+R/zL/u/2/2F/qn8U/oH+a/uH7Je3Pwc+... | [] | null | 200 | For common emitter configuration
<br><br>$$\beta $$ = $${{\Delta {I_C}} \over {\Delta {I_B}}} = {{\left( {4 - 2} \right)\,mA} \over {\left( {20 - 10} \right)\,\mu A}}$$
<br><br>= $${2 \over {10}} \times {{{{10}^{ - 3}}} \over {{{10}^{ - 6}}}}$$ = 200 | integer | jee-main-2021-online-18th-march-evening-shift | 10,629 |
1kryz02th | physics | electronic-devices | transistors | A transistor is connected in common emitter circuit configuration, the collector supply voltage is 10 V and the voltage drop across a resistor of 1000 $$\Omega$$ in the collector circuit is 0.6 V. If the current gain factor ($$\beta$$) is 24, then the base current is _____________ $$\mu$$A. (Round off to the Nearest In... | [] | null | 25 | $$\beta = {{{I_C}} \over {{I_B}}} = 24;$$<br><br>R<sub>C</sub> = 1000<br><br>$$\Delta$$V = 0.6<br><br>$${I_C} = {{0.6} \over {1000}}$$<br><br>I<sub>C</sub> = 6 $$\times$$ 10<sup>$$-$$4</sup><br><br>$${I_B} = {{{I_C}} \over \beta } = {{6 \times {{10}^{ - 4}}} \over {24}} = 25\mu A$$ | integer | jee-main-2021-online-27th-july-morning-shift | 10,630 |
1kte0iahh | physics | electronic-devices | transistors | For a transistor in CE mode to be used as an amplifier, it must be operated in : | [{"identifier": "A", "content": "Both cut-off and Saturation"}, {"identifier": "B", "content": "Saturation region only"}, {"identifier": "C", "content": "Cut-off region only"}, {"identifier": "D", "content": "The active region only"}] | ["D"] | null | Active region of the CE transistor is linear region and is best suited for its use as an amplifier. | mcq | jee-main-2021-online-27th-august-morning-shift | 10,631 |
1kte71ly4 | physics | electronic-devices | transistors | A circuit is arranged as shown in figure. The output voltage V<sub>0</sub> is equal to ................... V.<br/><br/><img src="data:image/png;base64,UklGRl4SAABXRUJQVlA4IFISAAAwcACdASrOAQMBPm0ylkikIqUhInB6sKANiWlu+F7aAJrHyaM7Ou79Jf5h+P3gP/VPyB8Svy/9Y/pv7Rf231yP4b+LdPH/R/yX1U+YH2z+Of0X/O/2b9nvgL/Gfy39nv7Z6e8AL1L/d/41/... | [] | null | 5 | As diodes D<sub>1</sub> and D<sub>2</sub> are in forward bias, so they acted as negligible resistances <br><br>$$\Rightarrow$$ Input voltage become zero<br><br><img src="https://res.cloudinary.com/dckxllbjy/image/upload/v1734263346/exam_images/qtfdtkzpcbzte3el67qo.webp" style="max-width: 100%;height: auto;display: bloc... | integer | jee-main-2021-online-27th-august-morning-shift | 10,632 |
1ktfjgsk1 | physics | electronic-devices | transistors | For a transistor $$\alpha$$ and $$\beta$$ are given as $$\alpha = {{{I_C}} \over {{I_E}}}$$ and $$\beta = {{{I_C}} \over {{I_B}}}$$. Then the correct relation between $$\alpha$$ and $$\beta$$ will be : | [{"identifier": "A", "content": "$$\\alpha = {{1 - \\beta } \\over \\beta }$$"}, {"identifier": "B", "content": "$$\\beta = {\\alpha \\over {1 - \\alpha }}$$"}, {"identifier": "C", "content": "$$\\alpha \\beta = 1$$"}, {"identifier": "D", "content": "$$\\alpha = {\\beta \\over {1 - \\beta }}$$"}] | ["B"] | null | $$\alpha = {{{I_C}} \over {{I_E}}}$$, $$\beta = {{{I_C}} \over {{I_B}}}$$; $${I_E} = {I_C} + {I_B}$$<br><br>$$\alpha = {{{I_C}} \over {{I_C} + {I_B}}} = {{{I_C}/{I_B}} \over {{{{I_C}} \over {{I_B}}} + 1}} = {\beta \over {\beta + 1}}$$<br><br>$$1 + {1 \over \beta } = {1 \over \alpha }$$<br><br>$${1 \over \beta } = ... | mcq | jee-main-2021-online-27th-august-evening-shift | 10,633 |
1l5486xby | physics | electronic-devices | transistors | <p>A transistor is used in an amplifier circuit in common emitter mode. If the base current changes by 100 $$\mu$$A, it brings a change of 10 mA in collector current. If the load resistance is 2 k$$\Omega$$ and input resistance is 1 k$$\Omega$$, the value of power gain is x $$\times$$ 10<sup>4</sup>. The value of x is ... | [] | null | 2 | <p>Power gain $$ = {\left[ {{{\Delta {i_C}} \over {\Delta {i_B}}}} \right]^2} \times {{{R_o}} \over {{R_i}}}$$</p>
<p>$$ = {\left[ {{{{{10}^{ - 2}}} \over {{{10}^{ - 4}}}}} \right]^2} \times {2 \over 1}$$</p>
<p>$$ = 2 \times {10^4}$$</p>
<p>$$ \Rightarrow x = 2$$</p> | integer | jee-main-2022-online-29th-june-morning-shift | 10,634 |
1l569tqsw | physics | electronic-devices | transistors | <p>Given below are two statements : One is labelled as Assertion A and the other is labelled as Reason R.</p>
<p>Assertion A : n-p-n transistor permits more current than a p-n-p transistor.</p>
<p>Reason R : Electrons have greater mobility as a charge carrier.</p>
<p>Choose the correct answer from the options given bel... | [{"identifier": "A", "content": "Both A and R are true, and R is correct explanation of A."}, {"identifier": "B", "content": "Both A and R are true but R is NOT the correct explanation of A."}, {"identifier": "C", "content": "A is true but R is false."}, {"identifier": "D", "content": "A is false but R is true."}] | ["A"] | null | <p>(A) is true as n-p-n transistor permits more current than p-n-p transistor as electrons which are majority charge carriers in n-p-n have higher mobility than holes which are majority carriers in p-n-p transistor.</p>
<p>$$\Rightarrow$$ Statement R is correct explanation of statement A.</p> | mcq | jee-main-2022-online-28th-june-morning-shift | 10,635 |
1l56vh7gs | physics | electronic-devices | transistors | <p>For a transistor to act as a switch, it must be operated in</p> | [{"identifier": "A", "content": "Active region."}, {"identifier": "B", "content": "Saturation state only."}, {"identifier": "C", "content": "Cut-off state only."}, {"identifier": "D", "content": "Saturation and cut-off state."}] | ["D"] | null | <p>A transistor acts as a switch when it is operated in saturation and cut-off state.</p> | mcq | jee-main-2022-online-27th-june-evening-shift | 10,636 |
1l58i9qj5 | physics | electronic-devices | transistors | <p>The positive feedback is required by an amplifier to act an oscillator. The feedback here means :</p> | [{"identifier": "A", "content": "External input is necessary to sustain ac signal in output."}, {"identifier": "B", "content": "A portion of the output power is returned back to the input."}, {"identifier": "C", "content": "Feedback can be achieved by LR network."}, {"identifier": "D", "content": "The base-collector ju... | ["B"] | null | <p>Feedback means a portion of the output power is fed to the inputs.</p> | mcq | jee-main-2022-online-26th-june-evening-shift | 10,637 |
1l59qc6ui | physics | electronic-devices | transistors | <p>In an experiment of CE configuration of n-p-n transistor, the transfer characteristics are observed as given in figure.</p><p><img src="data:image/png;base64,UklGRjgPAABXRUJQVlA4ICwPAADw/QCdASoAA+4CP4HA22Y2MK2nITOY+sAwCWlu+DyIaboZNlvj6c/2fq+Lwuc+2PEtRE1f/D+4fm1X7/C5N0yIv01qgvwEzMFeskxJiTEmJMSYkxJiTEmJMSYku8K0J1H7uNI... | [] | null | 15 | <p>Voltage gain $$ = {{{I_C}{R_0}} \over {{I_B}{R_i}}}$$</p>
<p>$$ = {{(10\,mA)(60\,\Omega )} \over {(200\,\mu A)(200\,\Omega )}}$$</p>
<p>$$\Rightarrow$$ Voltage gain = 15</p> | integer | jee-main-2022-online-25th-june-evening-shift | 10,638 |
1l6i3oykt | physics | electronic-devices | transistors | <p>The typical transfer characteristics of a transistor in CE configuration is shown in figure. A load resistor of $$2 \,k \Omega$$ is connected in the collector branch of the circuit used. The input resistance of the transistor is $$0.50 \,\mathrm{k} \Omega$$. The voltage gain of the transistor is ______________.</p>
... | [] | null | 200 | <p>V<sub>gain</sub> = Current gain $$\times$$ $${{{R_L}} \over {{R_i}}}$$</p>
<p>$$ = {{\Delta {I_C}} \over {\Delta {I_B}}} \times {{{R_L}} \over {{R_i}}}$$</p>
<p>$$ = {{5 \times {{10}^{ - 3}}} \over {100 \times {{10}^{ - 6}}}} \times {{2 \times {{10}^3}} \over {0.5 \times {{10}^3}}} = {{10} \over {0.5}} \times 10 = 2... | integer | jee-main-2022-online-26th-july-evening-shift | 10,640 |
1l6nt0ht8 | physics | electronic-devices | transistors | <p>An n.p.n transistor with current gain $$\beta=100$$ in common emitter configuration is shown in figure. The output voltage of the amplifier will be</p>
<p><img src="data:image/png;base64,UklGRoQLAABXRUJQVlA4IHgLAACwqACdASoAA5MBP4G+2WS2MCynIhLJ6sAwCWlu4W5TlmNwvH6WtKbOjt53znmqxKFefNmp4e5X/+9PxyoYLpUOplQwXSodTKhgulQOgS... | [{"identifier": "A", "content": "0.1 V"}, {"identifier": "B", "content": "1.0 V"}, {"identifier": "C", "content": "10 V"}, {"identifier": "D", "content": "100 V"}] | ["B"] | null | <p>$${{{V_0}} \over {{V_i}}} = \beta \times \left( {{{{R_C}} \over {{R_B}}}} \right)$$</p>
<p>$$ \Rightarrow {V_0} = 100 \times \left( {{{10} \over 1}} \right) \times {10^{ - 3}}$$</p>
<p>$$ = 1.0$$ V</p> | mcq | jee-main-2022-online-28th-july-evening-shift | 10,642 |
ldo7ah2h | physics | electronic-devices | transistors | <p>Given below are two statements :</p>
<p><b>Statement I:</b> In a typical transistor, all three regions emitter, base and collector have same doping level.</p>
<p><b>Statement II:</b> In a transistor, collector is the thickest and base is the thinnest segment.</p>
<p>In the light of the above statements, choose the m... | [{"identifier": "A", "content": "<b>Statement I</b> is correct but <b>Statement II</b> is incorrect"}, {"identifier": "B", "content": "Both <b>Statement I</b> and <b>Statement II</b> are incorrect"}, {"identifier": "C", "content": "<b>Statement I</b> is incorrect but <b>Statement II</b> is correct"}, {"identifier": "D"... | ["C"] | null | <style type="text/css">
.tg {border-collapse:collapse;border-spacing:0;}
.tg td{border-color:black;border-style:solid;border-width:1px;font-family:Arial, sans-serif;font-size:14px;
overflow:hidden;padding:10px 5px;word-break:normal;}
.tg th{border-color:black;border-style:solid;border-width:1px;font-family:Arial, sa... | mcq | jee-main-2023-online-31st-january-evening-shift | 10,643 |
1lgq3sw56 | physics | electronic-devices | transistors | <p>From the given transfer characteristic of a transistor in $$\mathrm{CE}$$ configuration, the value of power gain of this configuration is $$10^{x}$$, for $$\mathrm{R}_{\mathrm{B}}=10 ~\mathrm{k} \Omega$$, and $$\mathrm{R}_{\mathrm{C}}=1 ~\mathrm{k} \Omega$$. The value of $$x$$ is __________.</p>
<p><img src="data:im... | [] | null | 3 | Power gain<br/><br/>
$$
\begin{aligned}
& \Rightarrow \mathrm{A}_{\mathrm{v}} \cdot \mathrm{A}_1=\mathrm{B} \frac{\mathrm{R}_{\mathrm{C}}}{\mathrm{R}_{\mathrm{B}}} \cdot \mathrm{B}=\mathrm{B}^2 \frac{\mathrm{R}_{\mathrm{C}}}{\mathrm{R}_{\mathrm{B}}} \\\\
& =\left(\frac{(20-10) \times 10^{-3}}{(200-100) \times 10^{-6}}\... | integer | jee-main-2023-online-13th-april-morning-shift | 10,644 |
1lgrhigtk | physics | electronic-devices | transistors | <p>In an n-p-n common emitter (CE) transistor the collector current changes from 5 $$\mathrm{mA}$$ to $$16 \mathrm{~mA}$$ for the change in base current from $$100~ \mu \mathrm{A}$$ and $$200 ~\mu \mathrm{A}$$, respectively. The current gain of transistor is __________.</p> | [{"identifier": "A", "content": "210"}, {"identifier": "B", "content": "0.9"}, {"identifier": "C", "content": "9"}, {"identifier": "D", "content": "110"}] | ["D"] | null | The current gain of a transistor in common emitter configuration is given by:<br/><br/>
$$\beta = \frac{I_C}{I_B}$$<br/><br/>
where $$I_C$$ is the collector current and $$I_B$$ is the base current.
<br/><br/>
In this case, the collector current changes from $$5 \mathrm{~mA}$$ to $$16 \mathrm{~mA}$$ for the change in ba... | mcq | jee-main-2023-online-12th-april-morning-shift | 10,645 |
1lgyqgzcj | physics | electronic-devices | transistors | <p>For a given transistor amplifier circuit in $$\mathrm{CE}$$ configuration $$\mathrm{V}_{\mathrm{CC}}=1 \mathrm{~V}, \mathrm{R}_{\mathrm{C}}=1 ~\mathrm{k} \Omega, \mathrm{R}_{\mathrm{b}}=100 ~\mathrm{k} \Omega$$ and $$\beta=100$$. Value of base current $$\mathrm{I}_{\mathrm{b}}$$ is</p>
<p><img src="data:image/png;ba... | [{"identifier": "A", "content": "$$\\mathrm{I}_{\\mathrm{b}}=100 ~\\mu \\mathrm{A}$$"}, {"identifier": "B", "content": "$$\\mathrm{I}_{\\mathrm{b}}=0.1 ~\\mu \\mathrm{A}$$"}, {"identifier": "C", "content": "$$\\mathrm{I}_{\\mathrm{b}}=1.0 ~\\mu \\mathrm{A}$$"}, {"identifier": "D", "content": "$$\\mathrm{I}_{\\mathrm{b}... | ["D"] | null | In saturation mode $\mathrm{V}_{\mathrm{CE}}=0$<br><br><img src="https://app-content.cdn.examgoal.net/fly/@width/image/1lgznn3k9/3a47cd32-db85-4075-bc55-921f6dab50e8/f7152b90-e544-11ed-8d50-d941312069b0/file-1lgznn3ka.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1lgznn3k9/3a47cd32-db85-4075-bc... | mcq | jee-main-2023-online-8th-april-evening-shift | 10,646 |
qGInw3Vashui8HWL | physics | electrostatics | electric-charges-and-coulomb's-law | If a charge $$q$$ is placed at the center of the line joining two equal charges $$Q$$ such that the system is in equilibrium then the value of $$q$$ is | [{"identifier": "A", "content": "$$Q/2$$ "}, {"identifier": "B", "content": "$$ - Q/2$$"}, {"identifier": "C", "content": "$$Q/4$$"}, {"identifier": "D", "content": "$$ - Q/4$$"}] | ["D"] | null | For equilibrium of charge $$Q$$
<br><br>$$K{{Q \times Q} \over {{{\left( {2x} \right)}^2}}} + K{{Qq} \over {{x^2}}} = 0 \Rightarrow q = - {Q \over 4}$$
<br><br><img class="question-image" src="https://imagex.cdn.examgoal.net/uwMfIPegkqq5unwbi/9lyy3aPlgjMFqhnOnTdGTX07SuN0j/mFUPqvUV9I6wzTnHPaGlmL/image.svg" loading="laz... | mcq | aieee-2002 | 10,647 |
Rg6gNzp3AuTngWVw | physics | electrostatics | electric-charges-and-coulomb's-law | A charge $$Q$$ is placed at each of the opposite corners of a square. A charge $$q$$ is placed at each of the other two corners. If the net electrical force on $$Q$$ is zero, then $$Q/q$$ equals: | [{"identifier": "A", "content": "$$-1$$ "}, {"identifier": "B", "content": "$$1$$ "}, {"identifier": "C", "content": "$$ - {1 \\over {\\sqrt 2 }}$$ "}, {"identifier": "D", "content": "$$ - 2\\sqrt 2 $$ "}] | ["D"] | null | <img class="question-image" src="https://imagex.cdn.examgoal.net/BzLlRzn0u5SWvCQIN/QF7s2wmRe0lUFoqR2BFoI3loWBMP7/5S1b9Dscj5TnQnS3RNsVJO/image.svg" loading="lazy" alt="AIEEE 2009 Physics - Electrostatics Question 195 English Explanation">
<br><br>Let $$F$$ be the force between $$Q$$ and $$Q.$$ The force between $$q$$ an... | mcq | aieee-2009 | 10,649 |
E0XOnkex58yFOnaZ | physics | electrostatics | electric-charges-and-coulomb's-law | Two identical charged spheres are suspended by strings of equal lengths. The strings make an angle of $${30^ \circ }$$ with each other. When suspended in a liquid of density $$0.8g$$ $$c{m^{ - 3}},$$ the angle remains the same. If density of the material of the sphere is $$1.6$$ $$g$$ $$c{m^{ - 3}},$$ the dielectric co... | [{"identifier": "A", "content": "$$4$$ "}, {"identifier": "B", "content": "$$3$$ "}, {"identifier": "C", "content": "$$2$$ "}, {"identifier": "D", "content": "$$1$$ "}] | ["C"] | null | <img class="question-image" src="https://imagex.cdn.examgoal.net/paBaDvpbGvFTYIrc8/FIM2CuSQMrqmccIKacsvnOe2dAQUd/u1zfSTfN8FoeY8jq4BOqVP/image.svg" loading="lazy" alt="AIEEE 2010 Physics - Electrostatics Question 217 English Explanation 1">
<br>$${F_e} = T\sin {15^ \circ }\,\,;$$
<br>$$mg = T\cos {15^ \circ }$$
<br>$$ \... | mcq | aieee-2010 | 10,650 |
vpssfco95NSf7bXl | physics | electrostatics | electric-charges-and-coulomb's-law | Two charges, each equals to $$q,$$ are kept at $$x=-a$$ and $$x=a$$ on the $$x$$-axis. A particle of mass $$m$$ and charge $${q_0} = {q \over 2}$$ is placed at the origin. If charge $${q_0}$$ is given a small displacement $$\left( {y < < a} \right)$$ along the $$y$$-axis, the net force acting on the particle is... | [{"identifier": "A", "content": "$$y$$ "}, {"identifier": "B", "content": "$$-y$$ "}, {"identifier": "C", "content": "$${1 \\over y}$$ "}, {"identifier": "D", "content": "$$-{1 \\over y}$$"}] | ["A"] | null | <img class="question-image" src="https://imagex.cdn.examgoal.net/RGZ4HWH6bnTOIkap8/0h5nBN8m8itaD1JAG2e57Iy2tJISM/gubYshaILBzO3nqHnlFawN/image.svg" loading="lazy" alt="JEE Main 2013 (Offline) Physics - Electrostatics Question 186 English Explanation">
<br><br>$$ \Rightarrow {F_{net}} = 2F\,\cos \theta $$
<br><br>$${F_{... | mcq | jee-main-2013-offline | 10,652 |
MJMMWzwvnhKd8AxTg4ca3 | physics | electrostatics | electric-charges-and-coulomb's-law | Charge is distributed within a sphere of radius R with a volume charge density $$\rho \left( r \right) = {A \over {{r^2}}}{e^{ - {{2r} \over s}}},$$ where A and a are constants. If Q is the total charge of this charge distribution, the radius R is : | [{"identifier": "A", "content": "a log $$\\left( {1 - {Q \\over {2\\pi aA}}} \\right)$$"}, {"identifier": "B", "content": "$${a \\over 2}$$ log $$\\left( {{1 \\over {1 - {Q \\over {2\\pi aA}}}}} \\right)$$"}, {"identifier": "C", "content": "a log $$\\left( {{1 \\over {1 - {Q \\over {2\\pi aA}}}}} \\right)$$"}, {"identi... | ["B"] | null | <img src="https://res.cloudinary.com/dckxllbjy/image/upload/v1734265571/exam_images/j7witirl6mpdk1vjuhz7.webp" style="max-width: 100%; height: auto;display: block;margin: 0 auto;" loading="lazy" alt="JEE Main 2019 (Online) 9th January Evening Slot Physics - Electrostatics Question 167 English Explanation">
<br><br>Vol... | mcq | jee-main-2019-online-9th-january-evening-slot | 10,655 |
5CoiRmXf0hfxGO46OR1klrob7jk | physics | electrostatics | electric-charges-and-coulomb's-law | Two electrons each are fixed at a distance '2d'. A third charge proton placed at the midpoint is displaced slightly by a distance x (x << d) perpendicular to the line joining the two fixed charges. Proton will execute simple harmonic motion having angular frequency : (m = mass of charged particle) | [{"identifier": "A", "content": "$${\\left( {{{2{q^2}} \\over {\\pi {\\varepsilon _0}m{d^3}}}} \\right)^{{1 \\over 2}}}$$"}, {"identifier": "B", "content": "$${\\left( {{{{q^2}} \\over {2\\pi {\\varepsilon _0}m{d^3}}}} \\right)^{{1 \\over 2}}}$$"}, {"identifier": "C", "content": "$${\\left( {{{2\\pi {\\varepsilon _0}m{... | ["B"] | null | The arrangement of charges is shown below<br><br><img src="https://app-content.cdn.examgoal.net/fly/@width/image/1kxkjbam7/db054aff-6fa5-4bc9-b885-bc089d50f444/2c5d70f0-64cc-11ec-9ade-1d5c0ad4149d/file-1kxkjbam8.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1kxkjbam7/db054aff-6fa5-4bc9-b885-bc0... | mcq | jee-main-2021-online-24th-february-evening-slot | 10,656 |
knccGH7zwAtSqVMhir1klt3qyy1 | physics | electrostatics | electric-charges-and-coulomb's-law | Two small spheres each of mass 10 mg are suspended from a point by threads 0.5 m long. They are equally charged and repel each other to a distance of 0.20 m. The charge on each of the sphere is $${a \over {21}} \times {10^{ - 8}}$$C. The value of 'a' will be ___________. [Given g = 10 ms<sup>$$-$$2</sup>] | [] | null | 20 | <img src="https://res.cloudinary.com/dckxllbjy/image/upload/v1734266307/exam_images/dphpuza4bcv0gjeagma2.webp" style="max-width: 100%;height: auto;display: block;margin: 0 auto;" loading="lazy" alt="JEE Main 2021 (Online) 25th February Evening Shift Physics - Electrostatics Question 118 English Explanation">
<br>T sin$... | integer | jee-main-2021-online-25th-february-evening-slot | 10,658 |
qkcldPOHAAMVO8fCr11kmlx05rb | physics | electrostatics | electric-charges-and-coulomb's-law | An infinite number of point charges, each carrying 1 $$\mu$$C charge, are placed along the y-axis at y = 1 m, 2 m, 4 m, 8 m ...............<br/><br/>The total force on a 1C point charge, placed at the origin, is x $$\times$$ 10<sup>3</sup> N.<br/><br/>The value of x, to the nearest integer, is __________. [Take $${1 \o... | [] | null | 12 | <img src="https://res.cloudinary.com/dckxllbjy/image/upload/v1734264869/exam_images/k1gias56dnhyv1lyuoxv.webp" style="max-width: 100%;height: auto;display: block;margin: 0 auto;" loading="lazy" alt="JEE Main 2021 (Online) 18th March Evening Shift Physics - Electrostatics Question 110 English Explanation">
<br>$${F_{tot... | integer | jee-main-2021-online-18th-march-evening-shift | 10,659 |
d8784Me2wwop8j8cEV1krplv220 | physics | electrostatics | electric-charges-and-coulomb's-law | A certain charge Q is divided into two parts q and (Q $$-$$ q). How should the charges Q and q be divided so that q and (Q $$-$$ q) placed at a certain distance apart experience maximum electrostatic repulsion? | [{"identifier": "A", "content": "Q = 2q"}, {"identifier": "B", "content": "Q = 4q"}, {"identifier": "C", "content": "Q = 3q"}, {"identifier": "D", "content": "Q = $${q \\over 2}$$"}] | ["A"] | null | Let's say the charge q and (Q $$-$$ q) are at r distance from each other. This can be shown as<br><br><img src="https://app-content.cdn.examgoal.net/fly/@width/image/1kxujo649/7d917cd4-3560-4963-86ae-fdedb5d78653/68e72e90-6a4d-11ec-b083-77e72b2a3e30/file-1kxujo64a.png?format=png" data-orsrc="https://app-content.cdn.exa... | mcq | jee-main-2021-online-20th-july-morning-shift | 10,660 |
1krunjzi5 | physics | electrostatics | electric-charges-and-coulomb's-law | A particle of mass 1 mg and charge q is lying at the mid-point of two stationary particles kept at a distance '2 m' when each is carrying same charge 'q'. If the free charged particle is displaced from its equilibrium position through distance 'x' (x < < 1 m). The particle executes SHM. Its angular frequency of o... | [] | null | 6000 | <picture><source media="(max-width: 320px)" srcset="https://res.cloudinary.com/dckxllbjy/image/upload/v1734264636/exam_images/rgffam64o9ttr9r0c6xq.webp"><source media="(max-width: 500px)" srcset="https://res.cloudinary.com/dckxllbjy/image/upload/v1734267591/exam_images/xznmignunlzdoqemg7ej.webp"><img src="https://res.c... | integer | jee-main-2021-online-25th-july-morning-shift | 10,661 |
1kryxm0fy | physics | electrostatics | electric-charges-and-coulomb's-law | Two identical tennis balls each having mass 'm' and charge 'q' are suspended from a fixed point by threads of length 'l'. What is the equilibrium separation when each thread makes a small angle '$$\theta$$' with the vertical? | [{"identifier": "A", "content": "$$x = {\\left( {{{{q^2}l} \\over {2\\pi {\\varepsilon _0}mg}}} \\right)^{{1 \\over 2}}}$$"}, {"identifier": "B", "content": "$$x = {\\left( {{{{q^2}l} \\over {2\\pi {\\varepsilon _0}mg}}} \\right)^{{1 \\over 3}}}$$"}, {"identifier": "C", "content": "$$x = {\\left( {{{{q^2}{l^2}} \\over ... | ["B"] | null | <picture><source media="(max-width: 320px)" srcset="https://res.cloudinary.com/dckxllbjy/image/upload/v1734264413/exam_images/b9mallnos4mglumlb6re.webp"><source media="(max-width: 500px)" srcset="https://res.cloudinary.com/dckxllbjy/image/upload/v1734267056/exam_images/bx22bwekhenn20vpkl5l.webp"><source media="(max-wid... | mcq | jee-main-2021-online-27th-july-morning-shift | 10,662 |
1l54um9cc | physics | electrostatics | electric-charges-and-coulomb's-law | <p>Two point charges Q each are placed at a distance d apart. A third point charge q is placed at a distance x from mid-point on the perpendicular bisector. The value of x at which charge q will experience the maximum Coulomb's force is :</p> | [{"identifier": "A", "content": "x = d"}, {"identifier": "B", "content": "$$x = {d \\over 2}$$"}, {"identifier": "C", "content": "$$x = {d \\over {\\sqrt 2 }}$$"}, {"identifier": "D", "content": "$$x = {d \\over {2\\sqrt 2 }}$$"}] | ["D"] | null | <p>Force experienced by the charge q</p>
<p>$$F = {{kQqx} \over {{{\left[ {{{\left( {{d \over 2}} \right)}^2} + {x^2}} \right]}^{{3 \over 2}}}}}$$</p>
<p>For maximum Coulomb's force for x</p>
<p>$${{dF} \over {dx}} = 0$$</p>
<p>On solving $$x = {d \over {2\sqrt 2 }}$$</p> | mcq | jee-main-2022-online-29th-june-evening-shift | 10,663 |
1l56uyzue | physics | electrostatics | electric-charges-and-coulomb's-law | <p>Three identical charged balls each of charge 2 C are suspended from a common point P by silk threads of 2 m each (as shown in figure). They form an equilateral triangle of side 1m.</p>
<p>The ratio of net force on a charged ball to the force between any two charged balls will be :</p>
<p> <img src="data:image/png;ba... | [{"identifier": "A", "content": "1 : 1"}, {"identifier": "B", "content": "1 : 4"}, {"identifier": "C", "content": "$$\\sqrt3$$ : 2"}, {"identifier": "D", "content": "$$\\sqrt3$$ : 1"}] | ["D"] | null | <p><img src="https://app-content.cdn.examgoal.net/fly/@width/image/1l5ifloso/edd464c8-2157-4e0f-a7a8-895395d234af/d2a03480-0205-11ed-aa88-69f11483e075/file-1l5iflosp.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1l5ifloso/edd464c8-2157-4e0f-a7a8-895395d234af/d2a03480-0205-11ed-aa88-69f11483e075... | mcq | jee-main-2022-online-27th-june-evening-shift | 10,664 |
1l5bbjszf | physics | electrostatics | electric-charges-and-coulomb's-law | <p>Two identical charged particles each having a mass 10 g and charge 2.0 $$\times$$ 10<sup>$$-$$7</sup>C are placed on a horizontal table with a separation of L between them such that they stay in limited equilibrium. If the coefficient of friction between each particle and the table is 0.25, find the value of L. [Us... | [{"identifier": "A", "content": "12 cm"}, {"identifier": "B", "content": "10 cm"}, {"identifier": "C", "content": "8 cm"}, {"identifier": "D", "content": "5 cm"}] | ["A"] | null | <p>According to given information:</p>
<p>$${{k{Q^2}} \over {{L^2}}}$$ = $$\mu$$mg</p>
<p>Putting the values, we get</p>
<p>L = 12 cm</p> | mcq | jee-main-2022-online-24th-june-evening-shift | 10,665 |
1l5bc4qew | physics | electrostatics | electric-charges-and-coulomb's-law | <p>A long cylindrical volume contains a uniformly distributed charge of density $$\rho$$. The radius of cylindrical volume is R. A charge particle (q) revolves around the cylinder in a circular path. The kinetic energy of the particle is :</p> | [{"identifier": "A", "content": "$${{\\rho q{R^2}} \\over {4{\\varepsilon _0}}}$$"}, {"identifier": "B", "content": "$${{\\rho q{R^2}} \\over {2{\\varepsilon _0}}}$$"}, {"identifier": "C", "content": "$${{q\\rho } \\over {4{\\varepsilon _0}{R^2}}}$$"}, {"identifier": "D", "content": "$${{4{\\varepsilon _0}{R^2}} \\over... | ["A"] | null | <p>$${{m{v^2}} \over r} = {{2k\rho \times \pi {R^2}q} \over r}$$</p>
<p>$$ \Rightarrow {1 \over 2}m{v^2} = {{\rho {R^2}q} \over {4{\varepsilon _0}}}$$</p> | mcq | jee-main-2022-online-24th-june-evening-shift | 10,666 |
1l6i3s14a | physics | electrostatics | electric-charges-and-coulomb's-law | <p>Three point charges of magnitude $$5 \mu \mathrm{C}, 0.16 \mu \mathrm{C}$$ and $$0.3 \mu \mathrm{C}$$ are located at the vertices $$A, B, C$$ of a right angled triangle whose sides are $$A B=3 \mathrm{~cm}, B C=3 \sqrt{2} \mathrm{~cm}$$ and $$C A=3 \mathrm{~cm}$$ and point $$A$$ is the right angle corner. Charge at ... | [] | null | 17 | <p><img src="https://app-content.cdn.examgoal.net/fly/@width/image/1l6wilsbc/22019c3f-5fd5-4e87-9071-dbc4ccb0dd15/c133b180-1d90-11ed-b1e3-c3a54149d5d6/file-1l6wilsbd.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1l6wilsbc/22019c3f-5fd5-4e87-9071-dbc4ccb0dd15/c133b180-1d90-11ed-b1e3-c3a54149d5d6... | integer | jee-main-2022-online-26th-july-evening-shift | 10,668 |
1l6jhp4z4 | physics | electrostatics | electric-charges-and-coulomb's-law | <p>Two identical positive charges $$Q$$ each are fixed at a distance of '2a' apart from each other. Another point charge $$q_{0}$$ with mass 'm' is placed at midpoint between two fixed charges. For a small displacement along the line joining the fixed charges, the charge $$\mathrm{q}_{0}$$ executes $$\mathrm{SHM}$$. Th... | [{"identifier": "A", "content": "$$\\sqrt{\\frac{4 \\pi^{3} \\varepsilon_{0} m a^{3}}{q_{0} Q}}$$"}, {"identifier": "B", "content": "$$\\sqrt{\\frac{q_{0} Q}{4 \\pi^{3} \\varepsilon_{0} m a^{3}}}$$"}, {"identifier": "C", "content": "$$\\sqrt{\\frac{2 \\pi^{2} \\varepsilon_{0} m a^{3}}{q_{0} Q}}$$"}, {"identifier": "D",... | ["A"] | null | <p><img src="https://app-content.cdn.examgoal.net/fly/@width/image/1l6xteu2a/47b4cfe2-54c6-471c-9b57-3e894f8e9072/ccf56920-1e47-11ed-9c61-4529b721806b/file-1l6xteu2b.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1l6xteu2a/47b4cfe2-54c6-471c-9b57-3e894f8e9072/ccf56920-1e47-11ed-9c61-4529b721806b... | mcq | jee-main-2022-online-27th-july-morning-shift | 10,669 |
1l6kn49lt | physics | electrostatics | electric-charges-and-coulomb's-law | <p>A charge of $$4 \,\mu \mathrm{C}$$ is to be divided into two. The distance between the two divided charges is constant. The magnitude of the divided charges so that the force between them is maximum, will be :</p> | [{"identifier": "A", "content": "$$1 \\,\\mu \\mathrm{C}$$ and $$3 \\,\\mu\\mathrm{C}$$"}, {"identifier": "B", "content": "$$2 \\,\\mu \\mathrm{C}$$ and $$2\\, \\mu \\mathrm{C}$$"}, {"identifier": "C", "content": "0 and $$4\\, \\mu\\, \\mathrm{C}$$"}, {"identifier": "D", "content": "$$1.5 \\,\\mu \\mathrm{C}$$ and $$2.... | ["B"] | null | <p><img src="https://app-content.cdn.examgoal.net/fly/@width/image/1l6yvpl4z/f567a908-d37f-4672-8f56-4c0e1c02e1d8/92df5930-1edd-11ed-8851-99197a0d39b5/file-1l6yvpl50.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1l6yvpl4z/f567a908-d37f-4672-8f56-4c0e1c02e1d8/92df5930-1edd-11ed-8851-99197a0d39b5... | mcq | jee-main-2022-online-27th-july-evening-shift | 10,670 |
1ldydmrgz | physics | electrostatics | electric-charges-and-coulomb's-law | <p>If two charges q$$_1$$ and q$$_2$$ are separated with distance 'd' and placed in a medium of dielectric constant K. What will be the equivalent distance between charges in air for the same electrostatic force?</p> | [{"identifier": "A", "content": "$$d\\sqrt k$$"}, {"identifier": "B", "content": "$$1\\,.\\,5d\\sqrt k$$"}, {"identifier": "C", "content": "$$k\\sqrt d$$"}, {"identifier": "D", "content": "$$2d\\sqrt k$$"}] | ["A"] | null | <img src="https://app-content.cdn.examgoal.net/fly/@width/image/1le1k19i6/4d596806-bd65-4927-9344-83ff4829221a/c7a577e0-aaeb-11ed-9a71-b7e1b547314d/file-1le1k19i7.png?format=png" data-orsrc="https://app-content.cdn.examgoal.net/image/1le1k19i6/4d596806-bd65-4927-9344-83ff4829221a/c7a577e0-aaeb-11ed-9a71-b7e1b547314d/fi... | mcq | jee-main-2023-online-24th-january-morning-shift | 10,674 |
1lgp0afk4 | physics | electrostatics | electric-charges-and-coulomb's-law | <p>A $$10 ~\mu \mathrm{C}$$ charge is divided into two parts and placed at $$1 \mathrm{~cm}$$ distance so that the repulsive force between them is maximum. The charges of the two parts are:</p> | [{"identifier": "A", "content": "$$9 ~\\mu\\mathrm{C}, 1 ~\\mu \\mathrm{C}$$"}, {"identifier": "B", "content": "$$5 ~\\mu\\mathrm{C}, 5 ~\\mu \\mathrm{C}$$"}, {"identifier": "C", "content": "$$8 ~\\mu\\mathrm{C}, 2 ~\\mu \\mathrm{C}$$"}, {"identifier": "D", "content": "$$7 ~\\mu\\mathrm{C}, 3 ~\\mu \\mathrm{C}$$"}] | ["B"] | null | The repulsive force between the two charges is given by Coulomb's law:<br/><br/>
$$F=\frac{1}{4\pi\epsilon_0}\frac{q_1q_2}{r^2},$$<br/><br/>
where $F$ is the force, $q_1$ and $q_2$ are the charges, $r$ is the distance between them, and $\epsilon_0$ is the electric constant.
<br/><br/>
To maximize the force, we need to ... | mcq | jee-main-2023-online-13th-april-evening-shift | 10,675 |
1lgp0r2m0 | physics | electrostatics | electric-charges-and-coulomb's-law | <p>Three point charges $$\mathrm{q},-2 \mathrm{q}$$ and $$2 \mathrm{q}$$ are placed on $x$-axis at a distance $$x=0, x=\frac{3}{4} R$$ and $$x=R$$ respectively from origin as shown. If $$\mathrm{q}=2 \times 10^{-6} \mathrm{C}$$ and $$\mathrm{R}=2 \mathrm{~cm}$$, the magnitude of net force experienced by the charge $$-2... | [] | null | 5440 | $$
\begin{aligned}
& \mathrm{F}_{\mathrm{BA}}=\frac{\mathrm{Kq}(2 \mathrm{q})}{\left(\frac{3}{4} \mathrm{R}\right)^2}=\frac{32 \mathrm{Kq}^2}{9 \mathrm{R}^2} \\\\
& \mathrm{~F}_{\mathrm{BC}}=\frac{\mathrm{K}(2 \mathrm{q})(2 \mathrm{q})}{\left(\frac{\mathrm{R}}{4}\right)^2}=\frac{64 \mathrm{Kq}^2}{\mathrm{R}^2} \\\\
& \... | integer | jee-main-2023-online-13th-april-evening-shift | 10,676 |
1lguygx7l | physics | electrostatics | electric-charges-and-coulomb's-law | <p>As shown in the figure, a configuration of two equal point charges $$\left(q_{0}=+2 \mu \mathrm{C}\right)$$ is placed on an inclined plane. Mass of each point charge is $$20 \mathrm{~g}$$. Assume that there is no friction between charge and plane. For the system of two point charges to be in equilibrium (at rest) th... | [] | null | 300 | For equilibrium along the plane
<br/><br/>$$
\begin{aligned}
& \mathrm{mg} \sin \theta=\frac{1}{4 \pi \epsilon_0} \times \frac{\mathrm{q}_0^2}{\left(\mathrm{~h} \operatorname{cosec} 30^{\circ}\right)^2} \\\\
& \therefore \mathrm{h}^2=\frac{1}{4 \pi \epsilon_{\mathrm{o}}} \times \frac{\mathrm{q}_0^2}{\mathrm{mg} \operat... | integer | jee-main-2023-online-11th-april-morning-shift | 10,677 |
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