[
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 633899008937397583872 cm^-3. The short gate region is of the material Silicon with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 684550053188818960384 cm^-3. The long gate region is of the material Silicon with a length of 0.03 micrometers and it is doped with Boron at a concentration of 708643624252055093248 cm^-3. The drain region is of the material Diamond with a length of 0.32 micrometers and it is doped with Boron at a concentration of 666868145841890525184 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.54)\n(define Lgl 0.03)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.32)\n(define Ld 0.32)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t633899008937397583872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t684550053188818960384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t708643624252055093248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t666868145841890525184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.64 micrometers and it is doped with Boron at a concentration of 366035879793986502656 cm^-3. The short gate region is of the material SiGe with a length of 0.25 micrometers and it is doped with Boron at a concentration of 342913321368437391360 cm^-3. The long gate region is of the material SiGe with a length of 0.38 micrometers and it is doped with Boron at a concentration of 803826608792288231424 cm^-3. The drain region is of the material SiGe with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 60264307103781511168 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.25)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.64)\n(define Ld 0.64)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t366035879793986502656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t342913321368437391360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t803826608792288231424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t60264307103781511168\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 986148531814401966080 cm^-3. The short gate region is of the material GaN with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 763805514989154205696 cm^-3. The long gate region is of the material Diamond with a length of 0.54 micrometers and it is doped with Phosphorus at a concentration of 482953146164203618304 cm^-3. The drain region is of the material Silicon with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 634941533865825927168 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.73)\n(define Lgl 0.54)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.32)\n(define Ld 0.32)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t986148531814401966080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t763805514989154205696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t482953146164203618304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t634941533865825927168\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.6 micrometers and it is doped with Boron at a concentration of 221787756181124481024 cm^-3. The short gate region is of the material Diamond with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 44992993002705059840 cm^-3. The long gate region is of the material Silicon with a length of 0.76 micrometers and it is doped with Boron at a concentration of 220673175297269530624 cm^-3. The drain region is of the material GaN with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 189139379236739579904 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.21)\n(define Lgl 0.76)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.6)\n(define Ld 0.6)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t221787756181124481024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t44992993002705059840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t220673175297269530624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t189139379236739579904\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 545033634151507689472 cm^-3. The short gate region is of the material SiGe with a length of 0.97 micrometers and it is doped with Boron at a concentration of 243603920206408777728 cm^-3. The long gate region is of the material SiGe with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 490137131789342998528 cm^-3. The drain region is of the material SiGe with a length of 0.8 micrometers and it is doped with Boron at a concentration of 961059978529971240960 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.97)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.8)\n(define Ld 0.8)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t545033634151507689472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t243603920206408777728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t490137131789342998528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t961059978529971240960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 389599684151693410304 cm^-3. The short gate region is of the material Silicon with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 801202359822632091648 cm^-3. The long gate region is of the material GaN with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 139513320639062376448 cm^-3. The drain region is of the material SiGe with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 13051691890208485376 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.88)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t389599684151693410304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t801202359822632091648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t139513320639062376448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t13051691890208485376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.95 micrometers and it is doped with Boron at a concentration of 916946951418543210496 cm^-3. The short gate region is of the material GaN with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 123706378334903386112 cm^-3. The long gate region is of the material GaN with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 298929513001808429056 cm^-3. The drain region is of the material Germanium with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 380253940556060164096 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.59)\n(define Lgl 0.53)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.95)\n(define Ld 0.95)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t916946951418543210496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t123706378334903386112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t298929513001808429056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t380253940556060164096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.19 micrometers and it is doped with Boron at a concentration of 571696604701350166528 cm^-3. The short gate region is of the material Germanium with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 947008576107937398784 cm^-3. The long gate region is of the material SiGe with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 453908003672599298048 cm^-3. The drain region is of the material SiGe with a length of 0.19 micrometers and it is doped with Boron at a concentration of 170957808013628833792 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.41)\n(define Lgl 0.61)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.19)\n(define Ld 0.19)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t571696604701350166528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t947008576107937398784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t453908003672599298048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t170957808013628833792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 91806346960369614848 cm^-3. The short gate region is of the material SiGe with a length of 0.45 micrometers and it is doped with Boron at a concentration of 38270278936329650176 cm^-3. The long gate region is of the material SiGe with a length of 0.39 micrometers and it is doped with Boron at a concentration of 212010287491887857664 cm^-3. The drain region is of the material SiGe with a length of 0.44 micrometers and it is doped with Boron at a concentration of 817385286629829246976 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.45)\n(define Lgl 0.39)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.44)\n(define Ld 0.44)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t91806346960369614848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t38270278936329650176\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t212010287491887857664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t817385286629829246976\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 517982817393273077760 cm^-3. The short gate region is of the material SiGe with a length of 0.57 micrometers and it is doped with Boron at a concentration of 978743657008330964992 cm^-3. The long gate region is of the material Diamond with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 727473365023006916608 cm^-3. The drain region is of the material Diamond with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 959762946165468692480 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.57)\n(define Lgl 0.99)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.6)\n(define Ld 0.6)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t517982817393273077760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t978743657008330964992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t727473365023006916608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t959762946165468692480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.98 micrometers and it is doped with Phosphorus at a concentration of 838143374340266393600 cm^-3. The short gate region is of the material Silicon with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 405256053046404448256 cm^-3. The long gate region is of the material SiGe with a length of 0.37 micrometers and it is doped with Boron at a concentration of 791933080350504779776 cm^-3. The drain region is of the material Silicon with a length of 0.98 micrometers and it is doped with Phosphorus at a concentration of 607852712639042420736 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.03)\n(define Lgl 0.37)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.98)\n(define Ld 0.98)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t838143374340266393600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t405256053046404448256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t791933080350504779776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t607852712639042420736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 921337696074161979392 cm^-3. The short gate region is of the material Germanium with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 793700620970071293952 cm^-3. The long gate region is of the material Silicon with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 773775139267431497728 cm^-3. The drain region is of the material Diamond with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 837290181499133100032 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.85)\n(define Lgl 0.45)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.64)\n(define Ld 0.64)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t921337696074161979392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t793700620970071293952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t773775139267431497728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t837290181499133100032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 237943206607088287744 cm^-3. The short gate region is of the material Diamond with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 61113999901138542592 cm^-3. The long gate region is of the material SiGe with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 586322568069748359168 cm^-3. The drain region is of the material Germanium with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 994646749709509066752 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.41)\n(define Lgl 0.92)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t237943206607088287744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t61113999901138542592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t586322568069748359168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t994646749709509066752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 630651904678680723456 cm^-3. The short gate region is of the material Silicon with a length of 0.51 micrometers and it is doped with Boron at a concentration of 309024275142720618496 cm^-3. The long gate region is of the material SiGe with a length of 0.84 micrometers and it is doped with Boron at a concentration of 26611088461934727168 cm^-3. The drain region is of the material GaN with a length of 0.84 micrometers and it is doped with Boron at a concentration of 276157396468545093632 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.51)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.84)\n(define Ld 0.84)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t630651904678680723456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t309024275142720618496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t26611088461934727168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t276157396468545093632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 992756254543195537408 cm^-3. The short gate region is of the material Germanium with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 11334115135110453248 cm^-3. The long gate region is of the material Silicon with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 571253131602113986560 cm^-3. The drain region is of the material GaN with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 843235543571200868352 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.46)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.66)\n(define Ld 0.66)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t992756254543195537408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t11334115135110453248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t571253131602113986560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t843235543571200868352\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 938233138735823192064 cm^-3. The short gate region is of the material Germanium with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 535464887537517199360 cm^-3. The long gate region is of the material GaN with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 943298870403656187904 cm^-3. The drain region is of the material Germanium with a length of 0.01 micrometers and it is doped with Boron at a concentration of 398736187365268520960 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.3)\n(define Lgl 0.2)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.01)\n(define Ld 0.01)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t938233138735823192064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t535464887537517199360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t943298870403656187904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t398736187365268520960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 734711862645442740224 cm^-3. The short gate region is of the material Silicon with a length of 0.23 micrometers and it is doped with Boron at a concentration of 980184458484999782400 cm^-3. The long gate region is of the material SiGe with a length of 0.14 micrometers and it is doped with Boron at a concentration of 882317514634016980992 cm^-3. The drain region is of the material Silicon with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 414765810294179758080 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.23)\n(define Lgl 0.14)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.05)\n(define Ld 0.05)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t734711862645442740224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t980184458484999782400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t882317514634016980992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t414765810294179758080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 367159043124043448320 cm^-3. The short gate region is of the material GaN with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 320440870809890324480 cm^-3. The long gate region is of the material Germanium with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 696062715817345679360 cm^-3. The drain region is of the material GaN with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 467463038729567076352 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.76)\n(define Lgl 0.89)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.44)\n(define Ld 0.44)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t367159043124043448320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t320440870809890324480\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t696062715817345679360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t467463038729567076352\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 373050754179639541760 cm^-3. The short gate region is of the material Silicon with a length of 0.66 micrometers and it is doped with Boron at a concentration of 299097631716934418432 cm^-3. The long gate region is of the material GaN with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 630975821447806320640 cm^-3. The drain region is of the material Silicon with a length of 0.26 micrometers and it is doped with Boron at a concentration of 382850892300720275456 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.66)\n(define Lgl 0.41)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.26)\n(define Ld 0.26)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t373050754179639541760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t299097631716934418432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t630975821447806320640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t382850892300720275456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 679403391713731280896 cm^-3. The short gate region is of the material GaN with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 246819816500917731328 cm^-3. The long gate region is of the material Silicon with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 682161728108626313216 cm^-3. The drain region is of the material Diamond with a length of 0.43 micrometers and it is doped with Boron at a concentration of 723021342053645549568 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.6)\n(define Lgl 0.28)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.43)\n(define Ld 0.43)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t679403391713731280896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t246819816500917731328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t682161728108626313216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t723021342053645549568\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 937588230163414908928 cm^-3. The short gate region is of the material GaN with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 831673700916714405888 cm^-3. The long gate region is of the material SiGe with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 30829225213742751744 cm^-3. The drain region is of the material Silicon with a length of 0.78 micrometers and it is doped with Boron at a concentration of 576005610673532567552 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.32)\n(define Lgl 0.9)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t937588230163414908928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t831673700916714405888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t30829225213742751744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t576005610673532567552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.69 micrometers and it is doped with Boron at a concentration of 322241316428303433728 cm^-3. The short gate region is of the material Diamond with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 372424907054312325120 cm^-3. The long gate region is of the material Silicon with a length of 0.65 micrometers and it is doped with Boron at a concentration of 421821705443218161664 cm^-3. The drain region is of the material Silicon with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 915199926193651974144 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.77)\n(define Lgl 0.65)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.69)\n(define Ld 0.69)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t322241316428303433728\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t372424907054312325120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t421821705443218161664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t915199926193651974144\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.47 micrometers and it is doped with Boron at a concentration of 366584803009213497344 cm^-3. The short gate region is of the material SiGe with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 561785208259884875776 cm^-3. The long gate region is of the material Diamond with a length of 0.55 micrometers and it is doped with Boron at a concentration of 652821781944531943424 cm^-3. The drain region is of the material SiGe with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 515819135685143166976 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.92)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.47)\n(define Ld 0.47)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t366584803009213497344\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t561785208259884875776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t652821781944531943424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t515819135685143166976\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.35 micrometers and it is doped with Boron at a concentration of 134881954062853750784 cm^-3. The short gate region is of the material Germanium with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 826161962185290285056 cm^-3. The long gate region is of the material Germanium with a length of 0.98 micrometers and it is doped with Phosphorus at a concentration of 768901564213186396160 cm^-3. The drain region is of the material Silicon with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 892133675583730745344 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.32)\n(define Lgl 0.98)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t134881954062853750784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t826161962185290285056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t768901564213186396160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t892133675583730745344\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.97 micrometers and it is doped with Boron at a concentration of 253987703221898477568 cm^-3. The short gate region is of the material SiGe with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 309563842160582328320 cm^-3. The long gate region is of the material Silicon with a length of 0.44 micrometers and it is doped with Boron at a concentration of 295866307320027152384 cm^-3. The drain region is of the material GaN with a length of 0.97 micrometers and it is doped with Arsenic at a concentration of 856459325577523757056 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.35)\n(define Lgl 0.44)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.97)\n(define Ld 0.97)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t253987703221898477568\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t309563842160582328320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t295866307320027152384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t856459325577523757056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 82779264495533178880 cm^-3. The short gate region is of the material Germanium with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 834152279096077058048 cm^-3. The long gate region is of the material SiGe with a length of 0.52 micrometers and it is doped with Boron at a concentration of 29164262961516601344 cm^-3. The drain region is of the material SiGe with a length of 0.21 micrometers and it is doped with Boron at a concentration of 563381817367583784960 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.28)\n(define Lgl 0.52)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t82779264495533178880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t834152279096077058048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t29164262961516601344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t563381817367583784960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.55 micrometers and it is doped with Boron at a concentration of 291097343172346314752 cm^-3. The short gate region is of the material Silicon with a length of 0.24 micrometers and it is doped with Boron at a concentration of 482694553770810802176 cm^-3. The long gate region is of the material GaN with a length of 0.57 micrometers and it is doped with Boron at a concentration of 231654413688520245248 cm^-3. The drain region is of the material Silicon with a length of 0.55 micrometers and it is doped with Boron at a concentration of 536421409261080543232 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.24)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.55)\n(define Ld 0.55)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t291097343172346314752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t482694553770810802176\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t231654413688520245248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t536421409261080543232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 777179326547895517184 cm^-3. The short gate region is of the material Silicon with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 478333613062337462272 cm^-3. The long gate region is of the material GaN with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 326173952632319377408 cm^-3. The drain region is of the material SiGe with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 493691615813146378240 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.94)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.05)\n(define Ld 0.05)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t777179326547895517184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t478333613062337462272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t326173952632319377408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t493691615813146378240\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 609467235016434515968 cm^-3. The short gate region is of the material Silicon with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 81676400246735044608 cm^-3. The long gate region is of the material Silicon with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 110484594701442760704 cm^-3. The drain region is of the material Diamond with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 34468736034906075136 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.01)\n(define Lgl 0.21)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.52)\n(define Ld 0.52)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t609467235016434515968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t81676400246735044608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t110484594701442760704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t34468736034906075136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 522268162338195374080 cm^-3. The short gate region is of the material Silicon with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 80863737644051873792 cm^-3. The long gate region is of the material Diamond with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 287492921266485002240 cm^-3. The drain region is of the material Germanium with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 136252357041194860544 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.46)\n(define Lgl 0.5)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.81)\n(define Ld 0.81)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t522268162338195374080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t80863737644051873792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t287492921266485002240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t136252357041194860544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 670367965246362222592 cm^-3. The short gate region is of the material GaN with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 262303231836388589568 cm^-3. The long gate region is of the material SiGe with a length of 0.1 micrometers and it is doped with Boron at a concentration of 370150202398552752128 cm^-3. The drain region is of the material Germanium with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 742544443428905811968 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.15)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.14)\n(define Ld 0.14)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t670367965246362222592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t262303231836388589568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t370150202398552752128\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t742544443428905811968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 496286951178216013824 cm^-3. The short gate region is of the material Diamond with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 397981010772802535424 cm^-3. The long gate region is of the material GaN with a length of 0.33 micrometers and it is doped with Boron at a concentration of 741969235277625032704 cm^-3. The drain region is of the material Diamond with a length of 0.96 micrometers and it is doped with Boron at a concentration of 783296550419139657728 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.62)\n(define Lgl 0.33)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t496286951178216013824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t397981010772802535424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t741969235277625032704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t783296550419139657728\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.86 micrometers and it is doped with Boron at a concentration of 964643414230072950784 cm^-3. The short gate region is of the material GaN with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 673733431668822900736 cm^-3. The long gate region is of the material Silicon with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 555554565179991392256 cm^-3. The drain region is of the material Silicon with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 165111966219158650880 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.68)\n(define Lgl 0.09)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.86)\n(define Ld 0.86)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t964643414230072950784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t673733431668822900736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t555554565179991392256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t165111966219158650880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 250722585027559358464 cm^-3. The short gate region is of the material Silicon with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 37668520617760030720 cm^-3. The long gate region is of the material Diamond with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 856032435658871144448 cm^-3. The drain region is of the material Germanium with a length of 0.19 micrometers and it is doped with Boron at a concentration of 187737012328791179264 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.69)\n(define Lgl 0.09)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.19)\n(define Ld 0.19)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t250722585027559358464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t37668520617760030720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t856032435658871144448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t187737012328791179264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 26443479640479956992 cm^-3. The short gate region is of the material Diamond with a length of 0.58 micrometers and it is doped with Boron at a concentration of 420712701206431268864 cm^-3. The long gate region is of the material Germanium with a length of 0.38 micrometers and it is doped with Boron at a concentration of 265675448037602066432 cm^-3. The drain region is of the material SiGe with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 520950853722128252928 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.58)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.01)\n(define Ld 0.01)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t26443479640479956992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t420712701206431268864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t265675448037602066432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t520950853722128252928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 123585859871146999808 cm^-3. The short gate region is of the material SiGe with a length of 0.48 micrometers and it is doped with Boron at a concentration of 718852540396782878720 cm^-3. The long gate region is of the material Germanium with a length of 0.76 micrometers and it is doped with Boron at a concentration of 178220433287075921920 cm^-3. The drain region is of the material GaN with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 588438949150582505472 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.48)\n(define Lgl 0.76)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.56)\n(define Ld 0.56)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t123585859871146999808\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t718852540396782878720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t178220433287075921920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t588438949150582505472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 859723496137463169024 cm^-3. The short gate region is of the material Silicon with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 351953024988155346944 cm^-3. The long gate region is of the material SiGe with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 493270856658972442624 cm^-3. The drain region is of the material Germanium with a length of 0.83 micrometers and it is doped with Boron at a concentration of 386635056652477267968 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.05)\n(define Lgl 0.45)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.83)\n(define Ld 0.83)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t859723496137463169024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t351953024988155346944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t493270856658972442624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t386635056652477267968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 247915987005954457600 cm^-3. The short gate region is of the material Diamond with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 41189172702560313344 cm^-3. The long gate region is of the material Germanium with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 802805538453601648640 cm^-3. The drain region is of the material SiGe with a length of 0.66 micrometers and it is doped with Boron at a concentration of 525269878355955810304 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.99)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.66)\n(define Ld 0.66)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t247915987005954457600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t41189172702560313344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t802805538453601648640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t525269878355955810304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.07 micrometers and it is doped with Boron at a concentration of 397734819656462893056 cm^-3. The short gate region is of the material SiGe with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 235178172962502705152 cm^-3. The long gate region is of the material GaN with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 692561966317884669952 cm^-3. The drain region is of the material SiGe with a length of 0.07 micrometers and it is doped with Boron at a concentration of 425725105075979288576 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.89)\n(define Lgl 0.28)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.07)\n(define Ld 0.07)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t397734819656462893056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t235178172962502705152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t692561966317884669952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t425725105075979288576\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 500250723716746575872 cm^-3. The short gate region is of the material SiGe with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 456643539539973505024 cm^-3. The long gate region is of the material SiGe with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 544974305641176367104 cm^-3. The drain region is of the material Silicon with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 278437815844118626304 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.02)\n(define Lgl 0.7)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.84)\n(define Ld 0.84)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t500250723716746575872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t456643539539973505024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t544974305641176367104\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t278437815844118626304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 828610696343477813248 cm^-3. The short gate region is of the material Germanium with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 481125675353740017664 cm^-3. The long gate region is of the material Diamond with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 311579246022898089984 cm^-3. The drain region is of the material SiGe with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 957022289113812828160 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.16)\n(define Lgl 0.76)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.7)\n(define Ld 0.7)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t828610696343477813248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t481125675353740017664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t311579246022898089984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t957022289113812828160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 112166931615114805248 cm^-3. The short gate region is of the material Silicon with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 982629855026494439424 cm^-3. The long gate region is of the material Silicon with a length of 0.35 micrometers and it is doped with Boron at a concentration of 928261606825330212864 cm^-3. The drain region is of the material Silicon with a length of 0.29 micrometers and it is doped with Boron at a concentration of 386752305671302152192 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.55)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.29)\n(define Ld 0.29)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t112166931615114805248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t982629855026494439424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t928261606825330212864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t386752305671302152192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.04 micrometers and it is doped with Boron at a concentration of 639709338594420588544 cm^-3. The short gate region is of the material Silicon with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 587553531013179113472 cm^-3. The long gate region is of the material Diamond with a length of 0.14 micrometers and it is doped with Boron at a concentration of 839121345936413294592 cm^-3. The drain region is of the material Germanium with a length of 0.04 micrometers and it is doped with Boron at a concentration of 759668897391265841152 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.58)\n(define Lgl 0.14)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t639709338594420588544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t587553531013179113472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t839121345936413294592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t759668897391265841152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 671375593567809306624 cm^-3. The short gate region is of the material Diamond with a length of 0.71 micrometers and it is doped with Boron at a concentration of 548886340228391239680 cm^-3. The long gate region is of the material Germanium with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 273553107211341496320 cm^-3. The drain region is of the material SiGe with a length of 0.01 micrometers and it is doped with Boron at a concentration of 448873469577887481856 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.71)\n(define Lgl 0.53)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.01)\n(define Ld 0.01)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t671375593567809306624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t548886340228391239680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t273553107211341496320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t448873469577887481856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 926911819367916240896 cm^-3. The short gate region is of the material GaN with a length of 0.91 micrometers and it is doped with Boron at a concentration of 120470088294543802368 cm^-3. The long gate region is of the material GaN with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 797603617535921094656 cm^-3. The drain region is of the material Diamond with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 717597616375299833856 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.91)\n(define Lgl 0.76)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t926911819367916240896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t120470088294543802368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t797603617535921094656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t717597616375299833856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 155010312380538028032 cm^-3. The short gate region is of the material Diamond with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 333204377073051762688 cm^-3. The long gate region is of the material Germanium with a length of 0.58 micrometers and it is doped with Boron at a concentration of 590765676654094712832 cm^-3. The drain region is of the material GaN with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 894589763938532589568 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.19)\n(define Lgl 0.58)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.18)\n(define Ld 0.18)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t155010312380538028032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t333204377073051762688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t590765676654094712832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t894589763938532589568\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 191442508442316931072 cm^-3. The short gate region is of the material Diamond with a length of 0.05 micrometers and it is doped with Boron at a concentration of 543308776231056834560 cm^-3. The long gate region is of the material SiGe with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 237453782968644075520 cm^-3. The drain region is of the material Silicon with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 459917312748786024448 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.05)\n(define Lgl 0.68)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.77)\n(define Ld 0.77)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t191442508442316931072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t543308776231056834560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t237453782968644075520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t459917312748786024448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 452716588434878627840 cm^-3. The short gate region is of the material SiGe with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 384919433062516523008 cm^-3. The long gate region is of the material Germanium with a length of 0.07 micrometers and it is doped with Boron at a concentration of 758633678337182662656 cm^-3. The drain region is of the material GaN with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 871872599179836653568 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.76)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.82)\n(define Ld 0.82)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t452716588434878627840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t384919433062516523008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t758633678337182662656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t871872599179836653568\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 790059293302783082496 cm^-3. The short gate region is of the material Germanium with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 917573144313284132864 cm^-3. The long gate region is of the material Diamond with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 351305103232207028224 cm^-3. The drain region is of the material SiGe with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 803110805874430705664 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.88)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t790059293302783082496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t917573144313284132864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t351305103232207028224\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t803110805874430705664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 955696921332225671168 cm^-3. The short gate region is of the material Diamond with a length of 0.08 micrometers and it is doped with Boron at a concentration of 509218572710789382144 cm^-3. The long gate region is of the material Germanium with a length of 0.36 micrometers and it is doped with Boron at a concentration of 670796777708551405568 cm^-3. The drain region is of the material GaN with a length of 0.75 micrometers and it is doped with Arsenic at a concentration of 55572427819947638784 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.08)\n(define Lgl 0.36)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.75)\n(define Ld 0.75)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t955696921332225671168\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t509218572710789382144\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t670796777708551405568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t55572427819947638784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.23 micrometers and it is doped with Boron at a concentration of 769810797152820396032 cm^-3. The short gate region is of the material Germanium with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 258020338139222147072 cm^-3. The long gate region is of the material Silicon with a length of 0.08 micrometers and it is doped with Boron at a concentration of 490399395629427720192 cm^-3. The drain region is of the material Germanium with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 935225960517461475328 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.63)\n(define Lgl 0.08)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.23)\n(define Ld 0.23)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t769810797152820396032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t258020338139222147072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t490399395629427720192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t935225960517461475328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.9 micrometers and it is doped with Boron at a concentration of 898562381728069844992 cm^-3. The short gate region is of the material Silicon with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 637161487879813201920 cm^-3. The long gate region is of the material Diamond with a length of 0.73 micrometers and it is doped with Boron at a concentration of 432113809545098297344 cm^-3. The drain region is of the material Silicon with a length of 0.9 micrometers and it is doped with Boron at a concentration of 587227021157087707136 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.63)\n(define Lgl 0.73)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t898562381728069844992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t637161487879813201920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t432113809545098297344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t587227021157087707136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 784503381511392854016 cm^-3. The short gate region is of the material SiGe with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 113643500936359493632 cm^-3. The long gate region is of the material GaN with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 502810136158031314944 cm^-3. The drain region is of the material Silicon with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 423721540366813888512 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.19)\n(define Lgl 0.71)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.08)\n(define Ld 0.08)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t784503381511392854016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t113643500936359493632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t502810136158031314944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t423721540366813888512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.36 micrometers and it is doped with Boron at a concentration of 44170428192163348480 cm^-3. The short gate region is of the material Diamond with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 234149004063146672128 cm^-3. The long gate region is of the material Germanium with a length of 0.79 micrometers and it is doped with Boron at a concentration of 372667688032244989952 cm^-3. The drain region is of the material GaN with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 772566224598572990464 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.81)\n(define Lgl 0.79)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.36)\n(define Ld 0.36)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t44170428192163348480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t234149004063146672128\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t372667688032244989952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t772566224598572990464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 679498849691868332032 cm^-3. The short gate region is of the material Germanium with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 112317627023789326336 cm^-3. The long gate region is of the material SiGe with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 257087252526406303744 cm^-3. The drain region is of the material SiGe with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 734042629804936921088 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.8)\n(define Lgl 0.43)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.54)\n(define Ld 0.54)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t679498849691868332032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t112317627023789326336\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t257087252526406303744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t734042629804936921088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.24 micrometers and it is doped with Boron at a concentration of 476109864433525325824 cm^-3. The short gate region is of the material Diamond with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 557602822547589693440 cm^-3. The long gate region is of the material GaN with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 466637445082689699840 cm^-3. The drain region is of the material GaN with a length of 0.24 micrometers and it is doped with Boron at a concentration of 32263313728520646656 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.9)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.24)\n(define Ld 0.24)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t476109864433525325824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t557602822547589693440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t466637445082689699840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t32263313728520646656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.11 micrometers and it is doped with Boron at a concentration of 38666293745200750592 cm^-3. The short gate region is of the material Silicon with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 660077609314852536320 cm^-3. The long gate region is of the material SiGe with a length of 0.45 micrometers and it is doped with Boron at a concentration of 806803222239369101312 cm^-3. The drain region is of the material Diamond with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 30179101764916473856 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.26)\n(define Lgl 0.45)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.11)\n(define Ld 0.11)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t38666293745200750592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t660077609314852536320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t806803222239369101312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t30179101764916473856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 887922159373941866496 cm^-3. The short gate region is of the material SiGe with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 72703554776387207168 cm^-3. The long gate region is of the material GaN with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 651962543476708081664 cm^-3. The drain region is of the material Diamond with a length of 0.67 micrometers and it is doped with Boron at a concentration of 541361583527567032320 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.81)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.67)\n(define Ld 0.67)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t887922159373941866496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t72703554776387207168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t651962543476708081664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t541361583527567032320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 212080091846182993920 cm^-3. The short gate region is of the material GaN with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 392973005086411587584 cm^-3. The long gate region is of the material GaN with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 48518996428632940544 cm^-3. The drain region is of the material SiGe with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 85543671634563334144 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.85)\n(define Lgl 0.7)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t212080091846182993920\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t392973005086411587584\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t48518996428632940544\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t85543671634563334144\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.92 micrometers and it is doped with Boron at a concentration of 805885986018271428608 cm^-3. The short gate region is of the material Silicon with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 907712411671271571456 cm^-3. The long gate region is of the material SiGe with a length of 0.72 micrometers and it is doped with Boron at a concentration of 562445395342084800512 cm^-3. The drain region is of the material Silicon with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 22562365673658040320 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.56)\n(define Lgl 0.72)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.92)\n(define Ld 0.92)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t805885986018271428608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t907712411671271571456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t562445395342084800512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t22562365673658040320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 973587991807301386240 cm^-3. The short gate region is of the material GaN with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 496361733473575632896 cm^-3. The long gate region is of the material SiGe with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 198057654879014780928 cm^-3. The drain region is of the material GaN with a length of 0.13 micrometers and it is doped with Boron at a concentration of 328559274657624358912 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.04)\n(define Lgl 0.89)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.13)\n(define Ld 0.13)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t973587991807301386240\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t496361733473575632896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t198057654879014780928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t328559274657624358912\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 575229783129264488448 cm^-3. The short gate region is of the material SiGe with a length of 0.97 micrometers and it is doped with Boron at a concentration of 821874019897099157504 cm^-3. The long gate region is of the material Germanium with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 895818363806537482240 cm^-3. The drain region is of the material GaN with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 23194296866591756288 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.97)\n(define Lgl 0.52)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t575229783129264488448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t821874019897099157504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t895818363806537482240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t23194296866591756288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 388333907139339223040 cm^-3. The short gate region is of the material Diamond with a length of 0.41 micrometers and it is doped with Boron at a concentration of 164519478210685632512 cm^-3. The long gate region is of the material GaN with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 702022648750576762880 cm^-3. The drain region is of the material GaN with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 922169774868419051520 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.41)\n(define Lgl 0.19)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t388333907139339223040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t164519478210685632512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t702022648750576762880\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t922169774868419051520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 851303034367979552768 cm^-3. The short gate region is of the material Diamond with a length of 0.07 micrometers and it is doped with Boron at a concentration of 894752343901766811648 cm^-3. The long gate region is of the material Diamond with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 114298889613282066432 cm^-3. The drain region is of the material Silicon with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 872961092951984046080 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.07)\n(define Lgl 0.05)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t851303034367979552768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t894752343901766811648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t114298889613282066432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t872961092951984046080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 372356507217050075136 cm^-3. The short gate region is of the material Diamond with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 515435410059076173824 cm^-3. The long gate region is of the material Diamond with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 49271516435377864704 cm^-3. The drain region is of the material Diamond with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 227160170133464219648 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.34)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.84)\n(define Ld 0.84)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t372356507217050075136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t515435410059076173824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t49271516435377864704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t227160170133464219648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 547061073726178197504 cm^-3. The short gate region is of the material Germanium with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 557959931071680348160 cm^-3. The long gate region is of the material Silicon with a length of 0.44 micrometers and it is doped with Boron at a concentration of 752084994969347162112 cm^-3. The drain region is of the material Silicon with a length of 0.56 micrometers and it is doped with Boron at a concentration of 216308961565558145024 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.68)\n(define Lgl 0.44)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.56)\n(define Ld 0.56)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t547061073726178197504\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t557959931071680348160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t752084994969347162112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t216308961565558145024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 848068588169658630144 cm^-3. The short gate region is of the material Germanium with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 353579259776193658880 cm^-3. The long gate region is of the material SiGe with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 866566613108270170112 cm^-3. The drain region is of the material Diamond with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 107958976727776198656 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.19)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.31)\n(define Ld 0.31)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t848068588169658630144\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t353579259776193658880\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t866566613108270170112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t107958976727776198656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 957035498879667535872 cm^-3. The short gate region is of the material Germanium with a length of 0.22 micrometers and it is doped with Boron at a concentration of 153844893600140328960 cm^-3. The long gate region is of the material GaN with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 339531185729243185152 cm^-3. The drain region is of the material GaN with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 838767368351545294848 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.22)\n(define Lgl 0.44)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.14)\n(define Ld 0.14)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t957035498879667535872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t153844893600140328960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t339531185729243185152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t838767368351545294848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.48 micrometers and it is doped with Boron at a concentration of 65172559286707896320 cm^-3. The short gate region is of the material Germanium with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 455976759307539578880 cm^-3. The long gate region is of the material Silicon with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 938841253143934140416 cm^-3. The drain region is of the material Diamond with a length of 0.48 micrometers and it is doped with Boron at a concentration of 404603282861188186112 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.31)\n(define Lgl 0.68)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.48)\n(define Ld 0.48)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t65172559286707896320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t455976759307539578880\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t938841253143934140416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t404603282861188186112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 301983952263473922048 cm^-3. The short gate region is of the material SiGe with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 756493852898213363712 cm^-3. The long gate region is of the material SiGe with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 348788974581474918400 cm^-3. The drain region is of the material GaN with a length of 0.92 micrometers and it is doped with Boron at a concentration of 709981740192132890624 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.9)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.92)\n(define Ld 0.92)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t301983952263473922048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t756493852898213363712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t348788974581474918400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t709981740192132890624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 315475629792763445248 cm^-3. The short gate region is of the material Silicon with a length of 0.55 micrometers and it is doped with Boron at a concentration of 827714626809539330048 cm^-3. The long gate region is of the material SiGe with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 645623528494508802048 cm^-3. The drain region is of the material GaN with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 201944694580856127488 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.55)\n(define Lgl 0.39)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t315475629792763445248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t827714626809539330048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t645623528494508802048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t201944694580856127488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 441809778301482434560 cm^-3. The short gate region is of the material Diamond with a length of 0.68 micrometers and it is doped with Boron at a concentration of 678833363056679190528 cm^-3. The long gate region is of the material Diamond with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 386438105289040330752 cm^-3. The drain region is of the material SiGe with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 749786322738020876288 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.68)\n(define Lgl 0.09)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.73)\n(define Ld 0.73)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t441809778301482434560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t678833363056679190528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t386438105289040330752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t749786322738020876288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 277726287743794544640 cm^-3. The short gate region is of the material Silicon with a length of 0.92 micrometers and it is doped with Boron at a concentration of 486415083336258682880 cm^-3. The long gate region is of the material GaN with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 95722080301658570752 cm^-3. The drain region is of the material SiGe with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 365972419535809282048 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.92)\n(define Lgl 0.24)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.23)\n(define Ld 0.23)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t277726287743794544640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t486415083336258682880\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t95722080301658570752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t365972419535809282048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 318916994113009614848 cm^-3. The short gate region is of the material SiGe with a length of 0.67 micrometers and it is doped with Boron at a concentration of 580227801466878558208 cm^-3. The long gate region is of the material Diamond with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 423526109722984579072 cm^-3. The drain region is of the material Germanium with a length of 0.88 micrometers and it is doped with Boron at a concentration of 794904117629722165248 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.67)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.88)\n(define Ld 0.88)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t318916994113009614848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t580227801466878558208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t423526109722984579072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t794904117629722165248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.7 micrometers and it is doped with Boron at a concentration of 373307418632872787968 cm^-3. The short gate region is of the material Silicon with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 585583776382775459840 cm^-3. The long gate region is of the material Germanium with a length of 0.25 micrometers and it is doped with Boron at a concentration of 585491817430094839808 cm^-3. The drain region is of the material SiGe with a length of 0.7 micrometers and it is doped with Boron at a concentration of 573047393281964376064 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.14)\n(define Lgl 0.25)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.7)\n(define Ld 0.7)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t373307418632872787968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t585583776382775459840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t585491817430094839808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t573047393281964376064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 712401203726898298880 cm^-3. The short gate region is of the material SiGe with a length of 0.89 micrometers and it is doped with Boron at a concentration of 796621195395123642368 cm^-3. The long gate region is of the material Germanium with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 713635121347027402752 cm^-3. The drain region is of the material GaN with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 911430039742472912896 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.89)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.22)\n(define Ld 0.22)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t712401203726898298880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t796621195395123642368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t713635121347027402752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t911430039742472912896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 13207766303912312832 cm^-3. The short gate region is of the material Germanium with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 389146586948755128320 cm^-3. The long gate region is of the material GaN with a length of 0.06 micrometers and it is doped with Boron at a concentration of 904427221341817143296 cm^-3. The drain region is of the material Germanium with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 110664902406015533056 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.46)\n(define Lgl 0.06)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.52)\n(define Ld 0.52)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t13207766303912312832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t389146586948755128320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t904427221341817143296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t110664902406015533056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.13 micrometers and it is doped with Boron at a concentration of 894558377233641766912 cm^-3. The short gate region is of the material Diamond with a length of 1.0 micrometers and it is doped with Phosphorus at a concentration of 991287391504476798976 cm^-3. The long gate region is of the material Silicon with a length of 0.84 micrometers and it is doped with Boron at a concentration of 968885255618624487424 cm^-3. The drain region is of the material GaN with a length of 0.13 micrometers and it is doped with Boron at a concentration of 286605894647743643648 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 1.0)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.13)\n(define Ld 0.13)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t894558377233641766912\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t991287391504476798976\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t968885255618624487424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t286605894647743643648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.17 micrometers and it is doped with Boron at a concentration of 581311120455333838848 cm^-3. The short gate region is of the material GaN with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 604024715288389877760 cm^-3. The long gate region is of the material Silicon with a length of 0.73 micrometers and it is doped with Boron at a concentration of 632215215026900172800 cm^-3. The drain region is of the material SiGe with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 687739320344784011264 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.7)\n(define Lgl 0.73)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.17)\n(define Ld 0.17)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t581311120455333838848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t604024715288389877760\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t632215215026900172800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t687739320344784011264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 731268510397344776192 cm^-3. The short gate region is of the material GaN with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 668466703122379571200 cm^-3. The long gate region is of the material Germanium with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 966225739550828003328 cm^-3. The drain region is of the material Silicon with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 685871208710383861760 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.45)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.41)\n(define Ld 0.41)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t731268510397344776192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t668466703122379571200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t966225739550828003328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t685871208710383861760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 64095922380093915136 cm^-3. The short gate region is of the material SiGe with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 283042376608737886208 cm^-3. The long gate region is of the material Diamond with a length of 0.53 micrometers and it is doped with Boron at a concentration of 360487304427299930112 cm^-3. The drain region is of the material SiGe with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 633433266171593883648 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.57)\n(define Lgl 0.53)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.85)\n(define Ld 0.85)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t64095922380093915136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t283042376608737886208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t360487304427299930112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t633433266171593883648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 882763884541302931456 cm^-3. The short gate region is of the material Germanium with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 294069958864688775168 cm^-3. The long gate region is of the material Germanium with a length of 0.24 micrometers and it is doped with Boron at a concentration of 655614158093060145152 cm^-3. The drain region is of the material Silicon with a length of 0.25 micrometers and it is doped with Boron at a concentration of 245227772413800939520 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.73)\n(define Lgl 0.24)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.25)\n(define Ld 0.25)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t882763884541302931456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t294069958864688775168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t655614158093060145152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t245227772413800939520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 499993512570814988288 cm^-3. The short gate region is of the material Germanium with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 292661136436487618560 cm^-3. The long gate region is of the material SiGe with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 857410087255346905088 cm^-3. The drain region is of the material SiGe with a length of 0.27 micrometers and it is doped with Boron at a concentration of 754405941217071595520 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.08)\n(define Lgl 0.37)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.27)\n(define Ld 0.27)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t499993512570814988288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t292661136436487618560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t857410087255346905088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t754405941217071595520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 762027541322763337728 cm^-3. The short gate region is of the material Germanium with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 690317782325145894912 cm^-3. The long gate region is of the material SiGe with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 337735542214899007488 cm^-3. The drain region is of the material GaN with a length of 0.68 micrometers and it is doped with Boron at a concentration of 49436557004135768064 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.91)\n(define Lgl 0.27)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.68)\n(define Ld 0.68)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t762027541322763337728\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t690317782325145894912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t337735542214899007488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t49436557004135768064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 892389829846703538176 cm^-3. The short gate region is of the material GaN with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 112114465469739384832 cm^-3. The long gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 211110505101447397376 cm^-3. The drain region is of the material Germanium with a length of 0.28 micrometers and it is doped with Boron at a concentration of 712170768406290235392 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.27)\n(define Lgl 0.34)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t892389829846703538176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t112114465469739384832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t211110505101447397376\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t712170768406290235392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 557428934410457186304 cm^-3. The short gate region is of the material GaN with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 95267812112586342400 cm^-3. The long gate region is of the material SiGe with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 399211891760142483456 cm^-3. The drain region is of the material Diamond with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 860660497313688322048 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.41)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.93)\n(define Ld 0.93)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t557428934410457186304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t95267812112586342400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t399211891760142483456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t860660497313688322048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 961276943887612379136 cm^-3. The short gate region is of the material Silicon with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 794095000705853292544 cm^-3. The long gate region is of the material Diamond with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 429587598017567129600 cm^-3. The drain region is of the material Diamond with a length of 0.84 micrometers and it is doped with Boron at a concentration of 163538412162454224896 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.62)\n(define Lgl 0.81)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.84)\n(define Ld 0.84)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t961276943887612379136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t794095000705853292544\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t429587598017567129600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t163538412162454224896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 876205171319214309376 cm^-3. The short gate region is of the material Germanium with a length of 0.97 micrometers and it is doped with Boron at a concentration of 145858714681924583424 cm^-3. The long gate region is of the material Diamond with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 576733690990305083392 cm^-3. The drain region is of the material Diamond with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 135935065375225266176 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.97)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.49)\n(define Ld 0.49)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t876205171319214309376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t145858714681924583424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t576733690990305083392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t135935065375225266176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.37 micrometers and it is doped with Boron at a concentration of 814526802927601319936 cm^-3. The short gate region is of the material Diamond with a length of 0.59 micrometers and it is doped with Boron at a concentration of 608010684606582226944 cm^-3. The long gate region is of the material SiGe with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 546752247226549141504 cm^-3. The drain region is of the material GaN with a length of 0.37 micrometers and it is doped with Boron at a concentration of 688184412036424138752 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.59)\n(define Lgl 0.43)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.37)\n(define Ld 0.37)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t814526802927601319936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t608010684606582226944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t546752247226549141504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t688184412036424138752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 127676351900498903040 cm^-3. The short gate region is of the material Germanium with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 411571833313500332032 cm^-3. The long gate region is of the material Germanium with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 309407511707123974144 cm^-3. The drain region is of the material Germanium with a length of 0.09 micrometers and it is doped with Boron at a concentration of 793972556825521160192 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.13)\n(define Lgl 0.44)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.09)\n(define Ld 0.09)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t127676351900498903040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t411571833313500332032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t309407511707123974144\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t793972556825521160192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.55 micrometers and it is doped with Boron at a concentration of 752572479847281065984 cm^-3. The short gate region is of the material Germanium with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 736821900880339140608 cm^-3. The long gate region is of the material SiGe with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 347458631748150493184 cm^-3. The drain region is of the material GaN with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 534480046015705513984 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.95)\n(define Lgl 0.43)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.55)\n(define Ld 0.55)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t752572479847281065984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t736821900880339140608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t347458631748150493184\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t534480046015705513984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 851978092912447193088 cm^-3. The short gate region is of the material Germanium with a length of 0.08 micrometers and it is doped with Boron at a concentration of 187135876446013095936 cm^-3. The long gate region is of the material Silicon with a length of 0.6 micrometers and it is doped with Boron at a concentration of 634384339755483922432 cm^-3. The drain region is of the material Silicon with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 337771795495915749376 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.08)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.99)\n(define Ld 0.99)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t851978092912447193088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t187135876446013095936\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t634384339755483922432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t337771795495915749376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 646937067620293017600 cm^-3. The short gate region is of the material Silicon with a length of 0.61 micrometers and it is doped with Boron at a concentration of 853000172538823704576 cm^-3. The long gate region is of the material Diamond with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 29036958131201191936 cm^-3. The drain region is of the material Germanium with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 529666356270173126656 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.61)\n(define Lgl 0.25)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.06)\n(define Ld 0.06)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t646937067620293017600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t853000172538823704576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t29036958131201191936\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t529666356270173126656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 917006410966225649664 cm^-3. The short gate region is of the material GaN with a length of 0.89 micrometers and it is doped with Boron at a concentration of 365185968669603004416 cm^-3. The long gate region is of the material Germanium with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 253781752834900819968 cm^-3. The drain region is of the material SiGe with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 162691131600479813632 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.89)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.94)\n(define Ld 0.94)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t917006410966225649664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t365185968669603004416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t253781752834900819968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t162691131600479813632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 349950170784562806784 cm^-3. The short gate region is of the material Diamond with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 103688793308629155840 cm^-3. The long gate region is of the material Diamond with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 100581990823543373824 cm^-3. The drain region is of the material Germanium with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 655514448196786847744 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.13)\n(define Lgl 0.73)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.81)\n(define Ld 0.81)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t349950170784562806784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t103688793308629155840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t100581990823543373824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t655514448196786847744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.78 micrometers and it is doped with Boron at a concentration of 485532883969261043712 cm^-3. The short gate region is of the material Germanium with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 979282419854289010688 cm^-3. The long gate region is of the material Silicon with a length of 0.07 micrometers and it is doped with Boron at a concentration of 222770840311937007616 cm^-3. The drain region is of the material Diamond with a length of 0.78 micrometers and it is doped with Boron at a concentration of 996946905260064505856 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.58)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t485532883969261043712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t979282419854289010688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t222770840311937007616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t996946905260064505856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.18 micrometers and it is doped with Arsenic at a concentration of 451656828804480630784 cm^-3. The short gate region is of the material Diamond with a length of 0.33 micrometers and it is doped with Boron at a concentration of 394164227273906061312 cm^-3. The long gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 6405526178797930496 cm^-3. The drain region is of the material GaN with a length of 0.18 micrometers and it is doped with Arsenic at a concentration of 542531865279047532544 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.33)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.18)\n(define Ld 0.18)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t451656828804480630784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t394164227273906061312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t6405526178797930496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t542531865279047532544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 698738450898492456960 cm^-3. The short gate region is of the material Germanium with a length of 1.0 micrometers and it is doped with Phosphorus at a concentration of 467479551035732918272 cm^-3. The long gate region is of the material Diamond with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 551853011896970772480 cm^-3. The drain region is of the material Germanium with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 304657392374277865472 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 1.0)\n(define Lgl 0.96)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t698738450898492456960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t467479551035732918272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t551853011896970772480\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t304657392374277865472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.09 micrometers and it is doped with Boron at a concentration of 13550781885380325376 cm^-3. The short gate region is of the material Silicon with a length of 0.5 micrometers and it is doped with Boron at a concentration of 598824178223816638464 cm^-3. The long gate region is of the material Germanium with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 58198466214419292160 cm^-3. The drain region is of the material SiGe with a length of 0.09 micrometers and it is doped with Boron at a concentration of 934620592499795034112 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.5)\n(define Lgl 0.28)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.09)\n(define Ld 0.09)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t13550781885380325376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t598824178223816638464\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t58198466214419292160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t934620592499795034112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.83 micrometers and it is doped with Boron at a concentration of 219424364893357342720 cm^-3. The short gate region is of the material SiGe with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 385682401998206402560 cm^-3. The long gate region is of the material Germanium with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 878817184330564239360 cm^-3. The drain region is of the material Diamond with a length of 0.83 micrometers and it is doped with Boron at a concentration of 186662486978596110336 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.73)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.83)\n(define Ld 0.83)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t219424364893357342720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t385682401998206402560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t878817184330564239360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t186662486978596110336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 5065842235524521984 cm^-3. The short gate region is of the material Silicon with a length of 0.41 micrometers and it is doped with Boron at a concentration of 429438373675720900608 cm^-3. The long gate region is of the material GaN with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 138293460777173696512 cm^-3. The drain region is of the material SiGe with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 640577471824331931648 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.41)\n(define Lgl 0.66)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.57)\n(define Ld 0.57)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t5065842235524521984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t429438373675720900608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t138293460777173696512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t640577471824331931648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.81 micrometers and it is doped with Boron at a concentration of 908092639591356825600 cm^-3. The short gate region is of the material Diamond with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 607392680499922599936 cm^-3. The long gate region is of the material Diamond with a length of 0.62 micrometers and it is doped with Boron at a concentration of 78995982470901448704 cm^-3. The drain region is of the material Diamond with a length of 0.81 micrometers and it is doped with Boron at a concentration of 313497089769824845824 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.79)\n(define Lgl 0.62)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.81)\n(define Ld 0.81)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t908092639591356825600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t607392680499922599936\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t78995982470901448704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t313497089769824845824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 712532857175700013056 cm^-3. The short gate region is of the material Diamond with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 386665046029096321024 cm^-3. The long gate region is of the material Diamond with a length of 0.32 micrometers and it is doped with Boron at a concentration of 321237052417224605696 cm^-3. The drain region is of the material Diamond with a length of 0.15 micrometers and it is doped with Boron at a concentration of 862225043722627055616 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.32)\n(define Lgl 0.32)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t712532857175700013056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t386665046029096321024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t321237052417224605696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t862225043722627055616\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 185031276823705092096 cm^-3. The short gate region is of the material Diamond with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 404976047291370831872 cm^-3. The long gate region is of the material Silicon with a length of 0.67 micrometers and it is doped with Boron at a concentration of 164452648069680037888 cm^-3. The drain region is of the material GaN with a length of 0.44 micrometers and it is doped with Boron at a concentration of 679136650001704943616 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.63)\n(define Lgl 0.67)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.44)\n(define Ld 0.44)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t185031276823705092096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t404976047291370831872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t164452648069680037888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t679136650001704943616\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.1 micrometers and it is doped with Boron at a concentration of 879316992323591602176 cm^-3. The short gate region is of the material Germanium with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 3117902688287720960 cm^-3. The long gate region is of the material Diamond with a length of 0.75 micrometers and it is doped with Boron at a concentration of 109384157255697399808 cm^-3. The drain region is of the material GaN with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 34796287010973605888 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.03)\n(define Lgl 0.75)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.1)\n(define Ld 0.1)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t879316992323591602176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t3117902688287720960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t109384157255697399808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t34796287010973605888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 963382895929372180480 cm^-3. The short gate region is of the material GaN with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 288474012562170609664 cm^-3. The long gate region is of the material Silicon with a length of 0.78 micrometers and it is doped with Boron at a concentration of 437337012219536343040 cm^-3. The drain region is of the material Germanium with a length of 0.1 micrometers and it is doped with Boron at a concentration of 484664611089801936896 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.82)\n(define Lgl 0.78)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.1)\n(define Ld 0.1)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t963382895929372180480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t288474012562170609664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t437337012219536343040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t484664611089801936896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.06 micrometers and it is doped with Boron at a concentration of 362940586850610446336 cm^-3. The short gate region is of the material Silicon with a length of 0.58 micrometers and it is doped with Boron at a concentration of 287178517360641114112 cm^-3. The long gate region is of the material Silicon with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 203360304574730043392 cm^-3. The drain region is of the material SiGe with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 964846954424148164608 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.58)\n(define Lgl 0.21)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.06)\n(define Ld 0.06)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t362940586850610446336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t287178517360641114112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t203360304574730043392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t964846954424148164608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 159309231765911994368 cm^-3. The short gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 767311931658977935360 cm^-3. The long gate region is of the material GaN with a length of 0.47 micrometers and it is doped with Boron at a concentration of 713031768297024520192 cm^-3. The drain region is of the material SiGe with a length of 0.72 micrometers and it is doped with Boron at a concentration of 230921494374050201600 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.34)\n(define Lgl 0.47)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.72)\n(define Ld 0.72)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t159309231765911994368\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t767311931658977935360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t713031768297024520192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t230921494374050201600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 335910333933402456064 cm^-3. The short gate region is of the material SiGe with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 161628284936754135040 cm^-3. The long gate region is of the material SiGe with a length of 0.87 micrometers and it is doped with Boron at a concentration of 543776598828707610624 cm^-3. The drain region is of the material Diamond with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 577046786719517245440 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.91)\n(define Lgl 0.87)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t335910333933402456064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t161628284936754135040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t543776598828707610624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t577046786719517245440\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 787869006228106379264 cm^-3. The short gate region is of the material Silicon with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 569829024738539077632 cm^-3. The long gate region is of the material Diamond with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 454466329129033007104 cm^-3. The drain region is of the material SiGe with a length of 0.51 micrometers and it is doped with Boron at a concentration of 242826732179261063168 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.26)\n(define Lgl 0.04)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.51)\n(define Ld 0.51)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t787869006228106379264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t569829024738539077632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t454466329129033007104\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t242826732179261063168\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.46 micrometers and it is doped with Boron at a concentration of 540964601727783403520 cm^-3. The short gate region is of the material Diamond with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 834056195253178204160 cm^-3. The long gate region is of the material GaN with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 817682573099712905216 cm^-3. The drain region is of the material SiGe with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 240579523453333635072 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.81)\n(define Lgl 0.79)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t540964601727783403520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t834056195253178204160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t817682573099712905216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t240579523453333635072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 349115726961663934464 cm^-3. The short gate region is of the material Germanium with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 410829763904698843136 cm^-3. The long gate region is of the material Silicon with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 454521140261065457664 cm^-3. The drain region is of the material Silicon with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 357460881707351015424 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.47)\n(define Lgl 0.21)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.14)\n(define Ld 0.14)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t349115726961663934464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t410829763904698843136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t454521140261065457664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t357460881707351015424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.9 micrometers and it is doped with Boron at a concentration of 499642500861434134528 cm^-3. The short gate region is of the material GaN with a length of 0.85 micrometers and it is doped with Boron at a concentration of 780830413713788108800 cm^-3. The long gate region is of the material Silicon with a length of 0.98 micrometers and it is doped with Boron at a concentration of 46220764569793011712 cm^-3. The drain region is of the material SiGe with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 280065234098689933312 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.85)\n(define Lgl 0.98)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t499642500861434134528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t780830413713788108800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t46220764569793011712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t280065234098689933312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 771178429914707525632 cm^-3. The short gate region is of the material SiGe with a length of 0.49 micrometers and it is doped with Boron at a concentration of 391768473276004827136 cm^-3. The long gate region is of the material GaN with a length of 0.27 micrometers and it is doped with Boron at a concentration of 967378604837650300928 cm^-3. The drain region is of the material Silicon with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 168169288161319616512 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.49)\n(define Lgl 0.27)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.91)\n(define Ld 0.91)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t771178429914707525632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t391768473276004827136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t967378604837650300928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t168169288161319616512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 424993440091163983872 cm^-3. The short gate region is of the material Germanium with a length of 0.74 micrometers and it is doped with Boron at a concentration of 572745446898342428672 cm^-3. The long gate region is of the material SiGe with a length of 0.36 micrometers and it is doped with Phosphorus at a concentration of 478059938619830435840 cm^-3. The drain region is of the material SiGe with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 182871459565280231424 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.74)\n(define Lgl 0.36)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t424993440091163983872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t572745446898342428672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t478059938619830435840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t182871459565280231424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 966390740879612444672 cm^-3. The short gate region is of the material GaN with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 33154913477645025280 cm^-3. The long gate region is of the material Germanium with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 483300082764594151424 cm^-3. The drain region is of the material Germanium with a length of 0.42 micrometers and it is doped with Boron at a concentration of 206737093292616613888 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.28)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.42)\n(define Ld 0.42)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t966390740879612444672\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t33154913477645025280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t483300082764594151424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t206737093292616613888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.62 micrometers and it is doped with Boron at a concentration of 506588356579866181632 cm^-3. The short gate region is of the material Silicon with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 301015114372032233472 cm^-3. The long gate region is of the material Silicon with a length of 0.14 micrometers and it is doped with Boron at a concentration of 365721810231708876800 cm^-3. The drain region is of the material Silicon with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 823106782197679783936 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.69)\n(define Lgl 0.14)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t506588356579866181632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t301015114372032233472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t365721810231708876800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t823106782197679783936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 709157350624897794048 cm^-3. The short gate region is of the material SiGe with a length of 0.49 micrometers and it is doped with Boron at a concentration of 636208581670814220288 cm^-3. The long gate region is of the material Germanium with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 149011714904526618624 cm^-3. The drain region is of the material Germanium with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 351011574795999248384 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.49)\n(define Lgl 0.99)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.94)\n(define Ld 0.94)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t709157350624897794048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t636208581670814220288\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t149011714904526618624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t351011574795999248384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.75 micrometers and it is doped with Boron at a concentration of 562290435869828186112 cm^-3. The short gate region is of the material Silicon with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 475140285056236388352 cm^-3. The long gate region is of the material SiGe with a length of 0.89 micrometers and it is doped with Boron at a concentration of 753844015674602815488 cm^-3. The drain region is of the material Diamond with a length of 0.75 micrometers and it is doped with Boron at a concentration of 323247795572565868544 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.21)\n(define Lgl 0.89)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.75)\n(define Ld 0.75)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t562290435869828186112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t475140285056236388352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t753844015674602815488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t323247795572565868544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 827810922518768386048 cm^-3. The short gate region is of the material Germanium with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 978570490961619582976 cm^-3. The long gate region is of the material GaN with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 289379054519947296768 cm^-3. The drain region is of the material Germanium with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 875779330245863145472 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.38)\n(define Lgl 0.64)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.85)\n(define Ld 0.85)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t827810922518768386048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t978570490961619582976\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t289379054519947296768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t875779330245863145472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 201282495154612109312 cm^-3. The short gate region is of the material Diamond with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 288209929222130434048 cm^-3. The long gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Boron at a concentration of 437583033785293078528 cm^-3. The drain region is of the material SiGe with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 196539733455349481472 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.13)\n(define Lgl 0.86)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t201282495154612109312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t288209929222130434048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t437583033785293078528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t196539733455349481472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 604173275967069093888 cm^-3. The short gate region is of the material GaN with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 154567731175653343232 cm^-3. The long gate region is of the material GaN with a length of 0.66 micrometers and it is doped with Boron at a concentration of 547462946998741762048 cm^-3. The drain region is of the material Germanium with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 662371396748678397952 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.01)\n(define Lgl 0.66)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t604173275967069093888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t154567731175653343232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t547462946998741762048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t662371396748678397952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 469575672766241832960 cm^-3. The short gate region is of the material Germanium with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 710419273553888018432 cm^-3. The long gate region is of the material SiGe with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 243074638359432331264 cm^-3. The drain region is of the material Silicon with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 9453996323899332608 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.09)\n(define Lgl 0.13)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.01)\n(define Ld 0.01)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t469575672766241832960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t710419273553888018432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t243074638359432331264\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t9453996323899332608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.37 micrometers and it is doped with Arsenic at a concentration of 672714995872369213440 cm^-3. The short gate region is of the material Germanium with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 454925590552447549440 cm^-3. The long gate region is of the material Silicon with a length of 0.31 micrometers and it is doped with Boron at a concentration of 885030447040177897472 cm^-3. The drain region is of the material Diamond with a length of 0.37 micrometers and it is doped with Boron at a concentration of 40627737524887666688 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.81)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.37)\n(define Ld 0.37)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t672714995872369213440\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t454925590552447549440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t885030447040177897472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t40627737524887666688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 664236321653158313984 cm^-3. The short gate region is of the material Diamond with a length of 0.88 micrometers and it is doped with Boron at a concentration of 101477176678540148736 cm^-3. The long gate region is of the material SiGe with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 937879333804954746880 cm^-3. The drain region is of the material SiGe with a length of 0.35 micrometers and it is doped with Boron at a concentration of 232870451530575511552 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.88)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t664236321653158313984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t101477176678540148736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t937879333804954746880\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t232870451530575511552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 871618543400364015616 cm^-3. The short gate region is of the material Silicon with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 485941984947648462848 cm^-3. The long gate region is of the material SiGe with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 341618972741093425152 cm^-3. The drain region is of the material Diamond with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 718551413847475486720 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.9)\n(define Lgl 0.7)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.92)\n(define Ld 0.92)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t871618543400364015616\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t485941984947648462848\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t341618972741093425152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t718551413847475486720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 102176180083246202880 cm^-3. The short gate region is of the material Germanium with a length of 0.47 micrometers and it is doped with Boron at a concentration of 91466265835895865344 cm^-3. The long gate region is of the material Germanium with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 941155843643788492800 cm^-3. The drain region is of the material Diamond with a length of 0.51 micrometers and it is doped with Boron at a concentration of 540632061321748807680 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.47)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.51)\n(define Ld 0.51)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t102176180083246202880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t91466265835895865344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t941155843643788492800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t540632061321748807680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 974656843288218566656 cm^-3. The short gate region is of the material Diamond with a length of 0.99 micrometers and it is doped with Boron at a concentration of 575475775358902468608 cm^-3. The long gate region is of the material GaN with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 699358652939722948608 cm^-3. The drain region is of the material SiGe with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 398698628423623901184 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.99)\n(define Lgl 0.49)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t974656843288218566656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t575475775358902468608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t699358652939722948608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t398698628423623901184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.6 micrometers and it is doped with Boron at a concentration of 726878475154549374976 cm^-3. The short gate region is of the material SiGe with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 595551078655572705280 cm^-3. The long gate region is of the material GaN with a length of 0.93 micrometers and it is doped with Boron at a concentration of 559565022210662334464 cm^-3. The drain region is of the material Silicon with a length of 0.6 micrometers and it is doped with Boron at a concentration of 717956670566547456000 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.84)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.6)\n(define Ld 0.6)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t726878475154549374976\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t595551078655572705280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t559565022210662334464\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t717956670566547456000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 495496786231651467264 cm^-3. The short gate region is of the material Diamond with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 875539858272806371328 cm^-3. The long gate region is of the material Diamond with a length of 1.0 micrometers and it is doped with Arsenic at a concentration of 225178468654578434048 cm^-3. The drain region is of the material Germanium with a length of 0.78 micrometers and it is doped with Boron at a concentration of 837273592735768117248 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.08)\n(define Lgl 1.0)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t495496786231651467264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t875539858272806371328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t225178468654578434048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t837273592735768117248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 150542922366045159424 cm^-3. The short gate region is of the material Diamond with a length of 0.4 micrometers and it is doped with Boron at a concentration of 545852517522765381632 cm^-3. The long gate region is of the material Germanium with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 695078759245789528064 cm^-3. The drain region is of the material Silicon with a length of 0.33 micrometers and it is doped with Boron at a concentration of 315699898479610429440 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.4)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t150542922366045159424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t545852517522765381632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t695078759245789528064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t315699898479610429440\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.62 micrometers and it is doped with Boron at a concentration of 257270614643446153216 cm^-3. The short gate region is of the material Silicon with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 614849772210977767424 cm^-3. The long gate region is of the material Germanium with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 2930371733057709056 cm^-3. The drain region is of the material SiGe with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 96041201384629944320 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.26)\n(define Lgl 0.83)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t257270614643446153216\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t614849772210977767424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t2930371733057709056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t96041201384629944320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 881208081625995411456 cm^-3. The short gate region is of the material Diamond with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 625223490081831649280 cm^-3. The long gate region is of the material Germanium with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 83069651673064472576 cm^-3. The drain region is of the material SiGe with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 356918516865478426624 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.55)\n(define Lgl 0.05)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.23)\n(define Ld 0.23)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t881208081625995411456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t625223490081831649280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t83069651673064472576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t356918516865478426624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 213385192495016869888 cm^-3. The short gate region is of the material Germanium with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 213154863192209031168 cm^-3. The long gate region is of the material Silicon with a length of 0.41 micrometers and it is doped with Boron at a concentration of 503757847439804989440 cm^-3. The drain region is of the material Germanium with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 469535137021547511808 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.08)\n(define Lgl 0.41)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.69)\n(define Ld 0.69)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t213385192495016869888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t213154863192209031168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t503757847439804989440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t469535137021547511808\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.34 micrometers and it is doped with Boron at a concentration of 371814500718528692224 cm^-3. The short gate region is of the material Silicon with a length of 0.7 micrometers and it is doped with Boron at a concentration of 75119881190454820864 cm^-3. The long gate region is of the material Silicon with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 571346382930253316096 cm^-3. The drain region is of the material GaN with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 827611513612182093824 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.7)\n(define Lgl 0.27)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.34)\n(define Ld 0.34)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t371814500718528692224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t75119881190454820864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t571346382930253316096\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t827611513612182093824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 586785770070187835392 cm^-3. The short gate region is of the material Germanium with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 504479316948875608064 cm^-3. The long gate region is of the material Diamond with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 2709139771556047872 cm^-3. The drain region is of the material GaN with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 235261529353043673088 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.34)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.63)\n(define Ld 0.63)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t586785770070187835392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t504479316948875608064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t2709139771556047872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t235261529353043673088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.14 micrometers and it is doped with Boron at a concentration of 214840927731945046016 cm^-3. The short gate region is of the material Silicon with a length of 0.19 micrometers and it is doped with Boron at a concentration of 434502426739802505216 cm^-3. The long gate region is of the material Germanium with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 942447571799156457472 cm^-3. The drain region is of the material SiGe with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 702307580910222966784 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.19)\n(define Lgl 0.76)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.14)\n(define Ld 0.14)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t214840927731945046016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t434502426739802505216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t942447571799156457472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t702307580910222966784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 899078384922062225408 cm^-3. The short gate region is of the material Diamond with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 827027760784148267008 cm^-3. The long gate region is of the material Silicon with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 466972557104753672192 cm^-3. The drain region is of the material Germanium with a length of 0.76 micrometers and it is doped with Boron at a concentration of 527433140158506729472 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.02)\n(define Lgl 0.44)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.76)\n(define Ld 0.76)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t899078384922062225408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t827027760784148267008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t466972557104753672192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t527433140158506729472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.63 micrometers and it is doped with Boron at a concentration of 217229308567583391744 cm^-3. The short gate region is of the material Silicon with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 428267075212381913088 cm^-3. The long gate region is of the material Silicon with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 729149253189384273920 cm^-3. The drain region is of the material Germanium with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 299700603955759939584 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.84)\n(define Lgl 0.26)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.63)\n(define Ld 0.63)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t217229308567583391744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t428267075212381913088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t729149253189384273920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t299700603955759939584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 725076922952597110784 cm^-3. The short gate region is of the material Germanium with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 417984801724338012160 cm^-3. The long gate region is of the material Diamond with a length of 0.16 micrometers and it is doped with Boron at a concentration of 694953855493602279424 cm^-3. The drain region is of the material GaN with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 28907915451220185088 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.48)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.87)\n(define Ld 0.87)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t725076922952597110784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t417984801724338012160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t694953855493602279424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t28907915451220185088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 196581595045120180224 cm^-3. The short gate region is of the material Diamond with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 90776394944618921984 cm^-3. The long gate region is of the material SiGe with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 635536448497888919552 cm^-3. The drain region is of the material GaN with a length of 0.16 micrometers and it is doped with Boron at a concentration of 144722915976956461056 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.17)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.16)\n(define Ld 0.16)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t196581595045120180224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t90776394944618921984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t635536448497888919552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t144722915976956461056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 619194835041475756032 cm^-3. The short gate region is of the material SiGe with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 575481550204942286848 cm^-3. The long gate region is of the material Silicon with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 246980717058644312064 cm^-3. The drain region is of the material Germanium with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 147239256659322568704 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.03)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.1)\n(define Ld 0.1)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t619194835041475756032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t575481550204942286848\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t246980717058644312064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t147239256659322568704\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 854758405795247554560 cm^-3. The short gate region is of the material GaN with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 136675253611554242560 cm^-3. The long gate region is of the material SiGe with a length of 0.3 micrometers and it is doped with Boron at a concentration of 580814033520950640640 cm^-3. The drain region is of the material Diamond with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 266051014210645000192 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.31)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.67)\n(define Ld 0.67)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t854758405795247554560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t136675253611554242560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t580814033520950640640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t266051014210645000192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 455488563007844253696 cm^-3. The short gate region is of the material Silicon with a length of 0.6 micrometers and it is doped with Boron at a concentration of 293590558415147532288 cm^-3. The long gate region is of the material Silicon with a length of 0.68 micrometers and it is doped with Boron at a concentration of 518367998027316068352 cm^-3. The drain region is of the material Silicon with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 675801715300874190848 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.6)\n(define Lgl 0.68)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.74)\n(define Ld 0.74)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t455488563007844253696\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t293590558415147532288\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t518367998027316068352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t675801715300874190848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.25 micrometers and it is doped with Boron at a concentration of 193755583501659734016 cm^-3. The short gate region is of the material GaN with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 471501148235437834240 cm^-3. The long gate region is of the material SiGe with a length of 0.04 micrometers and it is doped with Boron at a concentration of 375664084904478638080 cm^-3. The drain region is of the material GaN with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 924724046278584696832 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.51)\n(define Lgl 0.04)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.25)\n(define Ld 0.25)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t193755583501659734016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t471501148235437834240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t375664084904478638080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t924724046278584696832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.73 micrometers and it is doped with Boron at a concentration of 116751404501490663424 cm^-3. The short gate region is of the material Germanium with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 465954693521592287232 cm^-3. The long gate region is of the material Diamond with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 354825317050999242752 cm^-3. The drain region is of the material Germanium with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 564325604235529158656 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.31)\n(define Lgl 0.34)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.73)\n(define Ld 0.73)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t116751404501490663424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t465954693521592287232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t354825317050999242752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t564325604235529158656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 996374318741568880640 cm^-3. The short gate region is of the material Diamond with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 839274943072373833728 cm^-3. The long gate region is of the material Silicon with a length of 0.19 micrometers and it is doped with Boron at a concentration of 24005213277573500928 cm^-3. The drain region is of the material GaN with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 719598535497375940608 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.23)\n(define Lgl 0.19)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.05)\n(define Ld 0.05)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t996374318741568880640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t839274943072373833728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t24005213277573500928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t719598535497375940608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.41 micrometers and it is doped with Boron at a concentration of 956606645087009243136 cm^-3. The short gate region is of the material Diamond with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 774174156395063017472 cm^-3. The long gate region is of the material Diamond with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 328967539230969954304 cm^-3. The drain region is of the material SiGe with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 535866978614086074368 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.53)\n(define Lgl 0.04)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.41)\n(define Ld 0.41)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t956606645087009243136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t774174156395063017472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t328967539230969954304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t535866978614086074368\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 647193842649000968192 cm^-3. The short gate region is of the material Silicon with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 51839814732148424704 cm^-3. The long gate region is of the material GaN with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 970690209457594564608 cm^-3. The drain region is of the material Germanium with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 690133019885854916608 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.2)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.49)\n(define Ld 0.49)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t647193842649000968192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t51839814732148424704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t970690209457594564608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t690133019885854916608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 212702235594471112704 cm^-3. The short gate region is of the material Diamond with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 937724976789427322880 cm^-3. The long gate region is of the material Diamond with a length of 0.7 micrometers and it is doped with Boron at a concentration of 479311931709143252992 cm^-3. The drain region is of the material SiGe with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 47524165278674296832 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.6)\n(define Lgl 0.7)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.34)\n(define Ld 0.34)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t212702235594471112704\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t937724976789427322880\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t479311931709143252992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t47524165278674296832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 455982389268010369024 cm^-3. The short gate region is of the material GaN with a length of 0.26 micrometers and it is doped with Boron at a concentration of 615194841296479846400 cm^-3. The long gate region is of the material Germanium with a length of 0.37 micrometers and it is doped with Boron at a concentration of 545804958660748378112 cm^-3. The drain region is of the material GaN with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 301425210027292491776 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.26)\n(define Lgl 0.37)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t455982389268010369024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t615194841296479846400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t545804958660748378112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t301425210027292491776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 259457572257946140672 cm^-3. The short gate region is of the material GaN with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 487802145165446873088 cm^-3. The long gate region is of the material Silicon with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 57038102925215277056 cm^-3. The drain region is of the material GaN with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 923946742261294432256 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.91)\n(define Lgl 0.06)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.22)\n(define Ld 0.22)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t259457572257946140672\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t487802145165446873088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t57038102925215277056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t923946742261294432256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 879278260911727968256 cm^-3. The short gate region is of the material SiGe with a length of 0.66 micrometers and it is doped with Boron at a concentration of 912879912699608170496 cm^-3. The long gate region is of the material GaN with a length of 0.75 micrometers and it is doped with Arsenic at a concentration of 153123368021984280576 cm^-3. The drain region is of the material Germanium with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 481609826010450624512 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.66)\n(define Lgl 0.75)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t879278260911727968256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t912879912699608170496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t153123368021984280576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t481609826010450624512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.83 micrometers and it is doped with Boron at a concentration of 289570746025568206848 cm^-3. The short gate region is of the material Germanium with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 54126292880095133696 cm^-3. The long gate region is of the material SiGe with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 443024997017466306560 cm^-3. The drain region is of the material GaN with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 228689284973238583296 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.26)\n(define Lgl 0.04)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.83)\n(define Ld 0.83)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t289570746025568206848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t54126292880095133696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t443024997017466306560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t228689284973238583296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 416897659426166669312 cm^-3. The short gate region is of the material SiGe with a length of 0.84 micrometers and it is doped with Boron at a concentration of 273750443022943813632 cm^-3. The long gate region is of the material GaN with a length of 0.87 micrometers and it is doped with Boron at a concentration of 8182829020917913600 cm^-3. The drain region is of the material SiGe with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 29046167129268375552 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.84)\n(define Lgl 0.87)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.09)\n(define Ld 0.09)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t416897659426166669312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t273750443022943813632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t8182829020917913600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t29046167129268375552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.24 micrometers and it is doped with Boron at a concentration of 429020637308762980352 cm^-3. The short gate region is of the material Germanium with a length of 0.81 micrometers and it is doped with Boron at a concentration of 393087518469472387072 cm^-3. The long gate region is of the material SiGe with a length of 0.43 micrometers and it is doped with Boron at a concentration of 790114854936854003712 cm^-3. The drain region is of the material GaN with a length of 0.24 micrometers and it is doped with Boron at a concentration of 50403119912700952576 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.81)\n(define Lgl 0.43)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.24)\n(define Ld 0.24)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t429020637308762980352\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t393087518469472387072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t790114854936854003712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t50403119912700952576\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 337377573707664982016 cm^-3. The short gate region is of the material Diamond with a length of 0.67 micrometers and it is doped with Boron at a concentration of 465186851880843739136 cm^-3. The long gate region is of the material GaN with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 296148385732692541440 cm^-3. The drain region is of the material SiGe with a length of 0.17 micrometers and it is doped with Boron at a concentration of 211750201085263904768 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.67)\n(define Lgl 0.09)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.17)\n(define Ld 0.17)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t337377573707664982016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t465186851880843739136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t296148385732692541440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t211750201085263904768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 574642007076238917632 cm^-3. The short gate region is of the material Silicon with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 158313697634041200640 cm^-3. The long gate region is of the material Silicon with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 531619769423730966528 cm^-3. The drain region is of the material Germanium with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 863747480284019294208 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.9)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.73)\n(define Ld 0.73)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t574642007076238917632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t158313697634041200640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t531619769423730966528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t863747480284019294208\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 425264204588042944512 cm^-3. The short gate region is of the material Diamond with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 115414937111447666688 cm^-3. The long gate region is of the material Silicon with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 636911923344269639680 cm^-3. The drain region is of the material SiGe with a length of 0.96 micrometers and it is doped with Boron at a concentration of 673745624376219664384 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.14)\n(define Lgl 0.26)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t425264204588042944512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t115414937111447666688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t636911923344269639680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t673745624376219664384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 735058395584699826176 cm^-3. The short gate region is of the material Silicon with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 790040547743372541952 cm^-3. The long gate region is of the material GaN with a length of 0.36 micrometers and it is doped with Boron at a concentration of 160366679965570564096 cm^-3. The drain region is of the material SiGe with a length of 0.59 micrometers and it is doped with Boron at a concentration of 706138450904724668416 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.79)\n(define Lgl 0.36)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t735058395584699826176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t790040547743372541952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t160366679965570564096\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t706138450904724668416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 400821873535631228928 cm^-3. The short gate region is of the material Silicon with a length of 0.88 micrometers and it is doped with Boron at a concentration of 936317289439919996928 cm^-3. The long gate region is of the material GaN with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 645253668914444763136 cm^-3. The drain region is of the material Germanium with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 547145871725413400576 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.88)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t400821873535631228928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t936317289439919996928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t645253668914444763136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t547145871725413400576\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.33 micrometers and it is doped with Boron at a concentration of 542699479968567394304 cm^-3. The short gate region is of the material Germanium with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 355821687345765548032 cm^-3. The long gate region is of the material SiGe with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 76562987136919748608 cm^-3. The drain region is of the material SiGe with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 16267566763984687104 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.5)\n(define Lgl 0.69)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t542699479968567394304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t355821687345765548032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t76562987136919748608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t16267566763984687104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.72 micrometers and it is doped with Arsenic at a concentration of 799633527523971039232 cm^-3. The short gate region is of the material GaN with a length of 0.95 micrometers and it is doped with Boron at a concentration of 828515610152668364800 cm^-3. The long gate region is of the material Germanium with a length of 0.44 micrometers and it is doped with Boron at a concentration of 778854474941105438720 cm^-3. The drain region is of the material Germanium with a length of 0.72 micrometers and it is doped with Arsenic at a concentration of 114126761876287062016 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.95)\n(define Lgl 0.44)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.72)\n(define Ld 0.72)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t799633527523971039232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t828515610152668364800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t778854474941105438720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t114126761876287062016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 359374828247444750336 cm^-3. The short gate region is of the material GaN with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 378573549598517231616 cm^-3. The long gate region is of the material Germanium with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 167478637766969819136 cm^-3. The drain region is of the material Germanium with a length of 0.07 micrometers and it is doped with Boron at a concentration of 88039432511353503744 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.89)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.07)\n(define Ld 0.07)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t359374828247444750336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t378573549598517231616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t167478637766969819136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t88039432511353503744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 226238060004885987328 cm^-3. The short gate region is of the material Silicon with a length of 0.97 micrometers and it is doped with Boron at a concentration of 566548601765077843968 cm^-3. The long gate region is of the material Silicon with a length of 0.11 micrometers and it is doped with Boron at a concentration of 567489622609834016768 cm^-3. The drain region is of the material Diamond with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 517312319130493779968 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.97)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.14)\n(define Ld 0.14)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t226238060004885987328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t566548601765077843968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t567489622609834016768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t517312319130493779968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 887415788420893769728 cm^-3. The short gate region is of the material Germanium with a length of 0.82 micrometers and it is doped with Boron at a concentration of 253185122034593759232 cm^-3. The long gate region is of the material Diamond with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 404852259851508252672 cm^-3. The drain region is of the material SiGe with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 80211316602944929792 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.82)\n(define Lgl 0.72)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.1)\n(define Ld 0.1)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t887415788420893769728\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t253185122034593759232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t404852259851508252672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t80211316602944929792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 427725137965886603264 cm^-3. The short gate region is of the material Silicon with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 466716323284311212032 cm^-3. The long gate region is of the material Germanium with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 197941150495398395904 cm^-3. The drain region is of the material SiGe with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 912866966697928425472 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.94)\n(define Lgl 0.51)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.23)\n(define Ld 0.23)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t427725137965886603264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t466716323284311212032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t197941150495398395904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t912866966697928425472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 3422441212689995264 cm^-3. The short gate region is of the material Silicon with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 442833976530623266816 cm^-3. The long gate region is of the material Germanium with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 189527234666937122816 cm^-3. The drain region is of the material Silicon with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 133415664231175995392 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.77)\n(define Lgl 0.7)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t3422441212689995264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t442833976530623266816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t189527234666937122816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t133415664231175995392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.54 micrometers and it is doped with Boron at a concentration of 858926588030361403392 cm^-3. The short gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Boron at a concentration of 976515867036359852032 cm^-3. The long gate region is of the material GaN with a length of 0.24 micrometers and it is doped with Boron at a concentration of 874651542023943880704 cm^-3. The drain region is of the material Germanium with a length of 0.54 micrometers and it is doped with Boron at a concentration of 967043600938706141184 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.55)\n(define Lgl 0.24)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.54)\n(define Ld 0.54)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t858926588030361403392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t976515867036359852032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t874651542023943880704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t967043600938706141184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 926640821116220604416 cm^-3. The short gate region is of the material GaN with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 257876493917561683968 cm^-3. The long gate region is of the material Germanium with a length of 0.47 micrometers and it is doped with Boron at a concentration of 225331912186055524352 cm^-3. The drain region is of the material Germanium with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 542030532798239866880 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.58)\n(define Lgl 0.47)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.43)\n(define Ld 0.43)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t926640821116220604416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t257876493917561683968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t225331912186055524352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t542030532798239866880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.71 micrometers and it is doped with Boron at a concentration of 725696321046866821120 cm^-3. The short gate region is of the material GaN with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 244494811381973024768 cm^-3. The long gate region is of the material GaN with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 262266114815039242240 cm^-3. The drain region is of the material Diamond with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 351691704007145160704 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.28)\n(define Lgl 0.19)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.71)\n(define Ld 0.71)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t725696321046866821120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t244494811381973024768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t262266114815039242240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t351691704007145160704\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 151810901118564106240 cm^-3. The short gate region is of the material SiGe with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 855856486931020382208 cm^-3. The long gate region is of the material Silicon with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 391022176089749061632 cm^-3. The drain region is of the material GaN with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 200693841564284190720 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.45)\n(define Lgl 0.92)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.86)\n(define Ld 0.86)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t151810901118564106240\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t855856486931020382208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t391022176089749061632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t200693841564284190720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 652194217708204589056 cm^-3. The short gate region is of the material Silicon with a length of 0.47 micrometers and it is doped with Boron at a concentration of 550160941697495334912 cm^-3. The long gate region is of the material Germanium with a length of 0.77 micrometers and it is doped with Boron at a concentration of 166148602323632422912 cm^-3. The drain region is of the material Germanium with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 216589603962459389952 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.47)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.88)\n(define Ld 0.88)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t652194217708204589056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t550160941697495334912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t166148602323632422912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t216589603962459389952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 636150703344529309696 cm^-3. The short gate region is of the material Germanium with a length of 0.44 micrometers and it is doped with Boron at a concentration of 566594210945115881472 cm^-3. The long gate region is of the material GaN with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 393370126633719169024 cm^-3. The drain region is of the material Diamond with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 692714265112205197312 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.44)\n(define Lgl 0.7)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.55)\n(define Ld 0.55)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t636150703344529309696\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t566594210945115881472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t393370126633719169024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t692714265112205197312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 695505571037638295552 cm^-3. The short gate region is of the material GaN with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 552061321818863697920 cm^-3. The long gate region is of the material GaN with a length of 0.97 micrometers and it is doped with Arsenic at a concentration of 510651856215173627904 cm^-3. The drain region is of the material Silicon with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 185359921722183581696 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.08)\n(define Lgl 0.97)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.26)\n(define Ld 0.26)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t695505571037638295552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t552061321818863697920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t510651856215173627904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t185359921722183581696\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.36 micrometers and it is doped with Phosphorus at a concentration of 42681626664871477248 cm^-3. The short gate region is of the material Germanium with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 52337761465366339584 cm^-3. The long gate region is of the material Silicon with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 867393934707138494464 cm^-3. The drain region is of the material Diamond with a length of 0.36 micrometers and it is doped with Phosphorus at a concentration of 626613420380838821888 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.58)\n(define Lgl 0.75)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.36)\n(define Ld 0.36)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t42681626664871477248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t52337761465366339584\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t867393934707138494464\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t626613420380838821888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.04 micrometers and it is doped with Boron at a concentration of 128000071678242209792 cm^-3. The short gate region is of the material Silicon with a length of 0.08 micrometers and it is doped with Boron at a concentration of 533971064673968848896 cm^-3. The long gate region is of the material Silicon with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 159612648512088506368 cm^-3. The drain region is of the material SiGe with a length of 0.04 micrometers and it is doped with Boron at a concentration of 864351830015281201152 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.08)\n(define Lgl 0.69)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t128000071678242209792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t533971064673968848896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t159612648512088506368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t864351830015281201152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.71 micrometers and it is doped with Boron at a concentration of 745347066830317551616 cm^-3. The short gate region is of the material Diamond with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 2819247954977730048 cm^-3. The long gate region is of the material GaN with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 820006193855947866112 cm^-3. The drain region is of the material Silicon with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 704675829622637199360 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.02)\n(define Lgl 0.19)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.71)\n(define Ld 0.71)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t745347066830317551616\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t2819247954977730048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t820006193855947866112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t704675829622637199360\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 127817216365742145536 cm^-3. The short gate region is of the material GaN with a length of 0.57 micrometers and it is doped with Boron at a concentration of 293301094746402553856 cm^-3. The long gate region is of the material Diamond with a length of 0.44 micrometers and it is doped with Boron at a concentration of 332336587783631929344 cm^-3. The drain region is of the material Germanium with a length of 0.78 micrometers and it is doped with Boron at a concentration of 382859748490290528256 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.57)\n(define Lgl 0.44)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t127817216365742145536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t293301094746402553856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t332336587783631929344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t382859748490290528256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.04 micrometers and it is doped with Boron at a concentration of 864753804380837117952 cm^-3. The short gate region is of the material GaN with a length of 0.2 micrometers and it is doped with Boron at a concentration of 996528093351235813376 cm^-3. The long gate region is of the material Germanium with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 929691853197205176320 cm^-3. The drain region is of the material Germanium with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 833219839244930252800 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.2)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t864753804380837117952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t996528093351235813376\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t929691853197205176320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t833219839244930252800\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 919122003972437442560 cm^-3. The short gate region is of the material GaN with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 471264613455114141696 cm^-3. The long gate region is of the material GaN with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 724700096455569833984 cm^-3. The drain region is of the material Silicon with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 435224368049296637952 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.28)\n(define Lgl 0.28)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.79)\n(define Ld 0.79)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t919122003972437442560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t471264613455114141696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t724700096455569833984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t435224368049296637952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 216158732079431876608 cm^-3. The short gate region is of the material Diamond with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 106617597347711959040 cm^-3. The long gate region is of the material Diamond with a length of 0.07 micrometers and it is doped with Boron at a concentration of 619704559230950703104 cm^-3. The drain region is of the material Germanium with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 717535408770271936512 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.62)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t216158732079431876608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t106617597347711959040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t619704559230950703104\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t717535408770271936512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.99 micrometers and it is doped with Boron at a concentration of 827581559230490083328 cm^-3. The short gate region is of the material Silicon with a length of 0.64 micrometers and it is doped with Boron at a concentration of 171369242508571443200 cm^-3. The long gate region is of the material GaN with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 205852235687406731264 cm^-3. The drain region is of the material Silicon with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 954769605622131851264 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.64)\n(define Lgl 0.45)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.99)\n(define Ld 0.99)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t827581559230490083328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t171369242508571443200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t205852235687406731264\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t954769605622131851264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.52 micrometers and it is doped with Boron at a concentration of 794798845338651852800 cm^-3. The short gate region is of the material SiGe with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 55152078591100944384 cm^-3. The long gate region is of the material Diamond with a length of 0.24 micrometers and it is doped with Boron at a concentration of 585680875290178748416 cm^-3. The drain region is of the material SiGe with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 165210477114734870528 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.93)\n(define Lgl 0.24)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.52)\n(define Ld 0.52)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t794798845338651852800\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t55152078591100944384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t585680875290178748416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t165210477114734870528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 879326634726104629248 cm^-3. The short gate region is of the material Silicon with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 787055613279987302400 cm^-3. The long gate region is of the material Silicon with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 79889499499648417792 cm^-3. The drain region is of the material Silicon with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 870868976890692894720 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.33)\n(define Lgl 0.39)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.23)\n(define Ld 0.23)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t879326634726104629248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t787055613279987302400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t79889499499648417792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t870868976890692894720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 651426458086063996928 cm^-3. The short gate region is of the material GaN with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 785185918884809539584 cm^-3. The long gate region is of the material SiGe with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 563855229909475393536 cm^-3. The drain region is of the material SiGe with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 903049979757501218816 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.33)\n(define Lgl 0.46)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.39)\n(define Ld 0.39)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t651426458086063996928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t785185918884809539584\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t563855229909475393536\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t903049979757501218816\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 851830520405217902592 cm^-3. The short gate region is of the material GaN with a length of 0.47 micrometers and it is doped with Boron at a concentration of 619515256990657150976 cm^-3. The long gate region is of the material Germanium with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 565330758803947651072 cm^-3. The drain region is of the material GaN with a length of 0.13 micrometers and it is doped with Boron at a concentration of 623463353195725062144 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.47)\n(define Lgl 0.58)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.13)\n(define Ld 0.13)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t851830520405217902592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t619515256990657150976\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t565330758803947651072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t623463353195725062144\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.98 micrometers and it is doped with Boron at a concentration of 296930267610714603520 cm^-3. The short gate region is of the material GaN with a length of 0.29 micrometers and it is doped with Boron at a concentration of 110546193063613071360 cm^-3. The long gate region is of the material Silicon with a length of 0.32 micrometers and it is doped with Boron at a concentration of 599828816789676359680 cm^-3. The drain region is of the material GaN with a length of 0.98 micrometers and it is doped with Arsenic at a concentration of 230151915969881047040 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.29)\n(define Lgl 0.32)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.98)\n(define Ld 0.98)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t296930267610714603520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t110546193063613071360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t599828816789676359680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t230151915969881047040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.62 micrometers and it is doped with Boron at a concentration of 178086543871686049792 cm^-3. The short gate region is of the material Diamond with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 731770320030814830592 cm^-3. The long gate region is of the material Diamond with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 305289616061107666944 cm^-3. The drain region is of the material Diamond with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 596306530051303145472 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.47)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t178086543871686049792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t731770320030814830592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t305289616061107666944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t596306530051303145472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 594486423802378321920 cm^-3. The short gate region is of the material Silicon with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 426401813548995444736 cm^-3. The long gate region is of the material Silicon with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 420841697441344520192 cm^-3. The drain region is of the material SiGe with a length of 0.35 micrometers and it is doped with Boron at a concentration of 588703221732759437312 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.45)\n(define Lgl 0.73)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t594486423802378321920\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t426401813548995444736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t420841697441344520192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t588703221732759437312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 1.0 micrometers and it is doped with Arsenic at a concentration of 245285850730128736256 cm^-3. The short gate region is of the material GaN with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 631472153411250683904 cm^-3. The long gate region is of the material Diamond with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 768042802898713837568 cm^-3. The drain region is of the material Silicon with a length of 1.0 micrometers and it is doped with Phosphorus at a concentration of 22600041276869038080 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.43)\n(define Lgl 0.26)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 1.0)\n(define Ld 1.0)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t245285850730128736256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t631472153411250683904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t768042802898713837568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t22600041276869038080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 758104133680810164224 cm^-3. The short gate region is of the material Silicon with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 164392797625914982400 cm^-3. The long gate region is of the material Germanium with a length of 0.28 micrometers and it is doped with Boron at a concentration of 589003857246119002112 cm^-3. The drain region is of the material Diamond with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 373866050708053164032 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.86)\n(define Lgl 0.28)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t758104133680810164224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t164392797625914982400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t589003857246119002112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t373866050708053164032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 309151914726080118784 cm^-3. The short gate region is of the material Germanium with a length of 0.72 micrometers and it is doped with Boron at a concentration of 727261411099224309760 cm^-3. The long gate region is of the material SiGe with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 131464358110134730752 cm^-3. The drain region is of the material SiGe with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 253593864316445392896 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.72)\n(define Lgl 0.29)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t309151914726080118784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t727261411099224309760\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t131464358110134730752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t253593864316445392896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 855785331778787737600 cm^-3. The short gate region is of the material Germanium with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 474520942981348982784 cm^-3. The long gate region is of the material Silicon with a length of 0.36 micrometers and it is doped with Boron at a concentration of 591376821381925044224 cm^-3. The drain region is of the material GaN with a length of 0.63 micrometers and it is doped with Boron at a concentration of 886273532894177918976 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.43)\n(define Lgl 0.36)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.63)\n(define Ld 0.63)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t855785331778787737600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t474520942981348982784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t591376821381925044224\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t886273532894177918976\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.91 micrometers and it is doped with Boron at a concentration of 442638623214724579328 cm^-3. The short gate region is of the material SiGe with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 840751345448724201472 cm^-3. The long gate region is of the material Diamond with a length of 0.63 micrometers and it is doped with Boron at a concentration of 449344364136318894080 cm^-3. The drain region is of the material Diamond with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 709259142300233236480 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.01)\n(define Lgl 0.63)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.91)\n(define Ld 0.91)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t442638623214724579328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t840751345448724201472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t449344364136318894080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t709259142300233236480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 671374956778957176832 cm^-3. The short gate region is of the material Silicon with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 495422971667463143424 cm^-3. The long gate region is of the material Diamond with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 579397746407957069824 cm^-3. The drain region is of the material Diamond with a length of 0.68 micrometers and it is doped with Boron at a concentration of 994107486287480619008 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.69)\n(define Lgl 0.27)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.68)\n(define Ld 0.68)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t671374956778957176832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t495422971667463143424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t579397746407957069824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t994107486287480619008\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 622963442236488024064 cm^-3. The short gate region is of the material GaN with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 491088663221176369152 cm^-3. The long gate region is of the material SiGe with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 836023371876675092480 cm^-3. The drain region is of the material GaN with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 990132355027027623936 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.74)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.17)\n(define Ld 0.17)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t622963442236488024064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t491088663221176369152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t836023371876675092480\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t990132355027027623936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.74 micrometers and it is doped with Boron at a concentration of 921876346479775186944 cm^-3. The short gate region is of the material Silicon with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 67237821813404966912 cm^-3. The long gate region is of the material GaN with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 625873101472414695424 cm^-3. The drain region is of the material Diamond with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 895636703903660376064 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.51)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.74)\n(define Ld 0.74)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t921876346479775186944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t67237821813404966912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t625873101472414695424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t895636703903660376064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 829544421133766492160 cm^-3. The short gate region is of the material GaN with a length of 0.04 micrometers and it is doped with Boron at a concentration of 766620790295370399744 cm^-3. The long gate region is of the material GaN with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 187677030752589578240 cm^-3. The drain region is of the material GaN with a length of 0.8 micrometers and it is doped with Boron at a concentration of 755478992880900505600 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.04)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.8)\n(define Ld 0.8)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t829544421133766492160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t766620790295370399744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t187677030752589578240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t755478992880900505600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 959426173904145088512 cm^-3. The short gate region is of the material SiGe with a length of 0.67 micrometers and it is doped with Boron at a concentration of 875326356404504231936 cm^-3. The long gate region is of the material GaN with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 276260339257021169664 cm^-3. The drain region is of the material SiGe with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 804898636283746975744 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.67)\n(define Lgl 0.51)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.76)\n(define Ld 0.76)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t959426173904145088512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t875326356404504231936\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t276260339257021169664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t804898636283746975744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 556888065458717327360 cm^-3. The short gate region is of the material GaN with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 22737310300854657024 cm^-3. The long gate region is of the material Germanium with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 25779422786881617920 cm^-3. The drain region is of the material GaN with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 171752328532609957888 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.76)\n(define Lgl 0.36)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.56)\n(define Ld 0.56)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t556888065458717327360\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t22737310300854657024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t25779422786881617920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t171752328532609957888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.85 micrometers and it is doped with Boron at a concentration of 602444422287951659008 cm^-3. The short gate region is of the material Germanium with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 929739588868837081088 cm^-3. The long gate region is of the material Germanium with a length of 0.65 micrometers and it is doped with Boron at a concentration of 654811292584817852416 cm^-3. The drain region is of the material GaN with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 377877431653758533632 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.54)\n(define Lgl 0.65)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.85)\n(define Ld 0.85)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t602444422287951659008\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t929739588868837081088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t654811292584817852416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t377877431653758533632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 184618066346985127936 cm^-3. The short gate region is of the material Diamond with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 200885107420319711232 cm^-3. The long gate region is of the material GaN with a length of 0.33 micrometers and it is doped with Boron at a concentration of 242632653955555295232 cm^-3. The drain region is of the material Germanium with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 384244748696793907200 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.7)\n(define Lgl 0.33)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t184618066346985127936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t200885107420319711232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t242632653955555295232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t384244748696793907200\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.95 micrometers and it is doped with Boron at a concentration of 321630258375115407360 cm^-3. The short gate region is of the material Diamond with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 54041317050970316800 cm^-3. The long gate region is of the material GaN with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 694750278715647328256 cm^-3. The drain region is of the material Germanium with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 126740260643908993024 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.51)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.95)\n(define Ld 0.95)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t321630258375115407360\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t54041317050970316800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t694750278715647328256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t126740260643908993024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 523548988124888170496 cm^-3. The short gate region is of the material GaN with a length of 0.63 micrometers and it is doped with Boron at a concentration of 541491710551783243776 cm^-3. The long gate region is of the material Germanium with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 667112469304179294208 cm^-3. The drain region is of the material Germanium with a length of 0.58 micrometers and it is doped with Boron at a concentration of 357770888577635581952 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.63)\n(define Lgl 0.03)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t523548988124888170496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t541491710551783243776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t667112469304179294208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t357770888577635581952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 644965165742695383040 cm^-3. The short gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 750535653467589836800 cm^-3. The long gate region is of the material Silicon with a length of 0.54 micrometers and it is doped with Phosphorus at a concentration of 271216895857258692608 cm^-3. The drain region is of the material GaN with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 85040224324811603968 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.86)\n(define Lgl 0.54)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.85)\n(define Ld 0.85)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t644965165742695383040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t750535653467589836800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t271216895857258692608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t85040224324811603968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.31 micrometers and it is doped with Boron at a concentration of 627056001536929824768 cm^-3. The short gate region is of the material Silicon with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 146886539904018366464 cm^-3. The long gate region is of the material Germanium with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 365891201463475503104 cm^-3. The drain region is of the material Silicon with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 813855095236748509184 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.95)\n(define Lgl 0.14)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.31)\n(define Ld 0.31)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t627056001536929824768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t146886539904018366464\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t365891201463475503104\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t813855095236748509184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 836769517427232210944 cm^-3. The short gate region is of the material Silicon with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 93524803290483081216 cm^-3. The long gate region is of the material Germanium with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 592756048282315390976 cm^-3. The drain region is of the material Diamond with a length of 0.56 micrometers and it is doped with Boron at a concentration of 847635004443568898048 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.07)\n(define Lgl 0.99)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.56)\n(define Ld 0.56)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t836769517427232210944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t93524803290483081216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t592756048282315390976\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t847635004443568898048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.41 micrometers and it is doped with Boron at a concentration of 743745834134919184384 cm^-3. The short gate region is of the material Diamond with a length of 0.11 micrometers and it is doped with Boron at a concentration of 396160953507295920128 cm^-3. The long gate region is of the material Silicon with a length of 0.08 micrometers and it is doped with Boron at a concentration of 403771886288124641280 cm^-3. The drain region is of the material GaN with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 872608192093216440320 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.11)\n(define Lgl 0.08)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.41)\n(define Ld 0.41)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t743745834134919184384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t396160953507295920128\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t403771886288124641280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t872608192093216440320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 423043202620986228736 cm^-3. The short gate region is of the material Diamond with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 709324917809012277248 cm^-3. The long gate region is of the material Diamond with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 604356121743576793088 cm^-3. The drain region is of the material SiGe with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 579915756169637658624 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.22)\n(define Lgl 0.64)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.36)\n(define Ld 0.36)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t423043202620986228736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t709324917809012277248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t604356121743576793088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t579915756169637658624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.05 micrometers and it is doped with Boron at a concentration of 489157294016715423744 cm^-3. The short gate region is of the material Silicon with a length of 0.78 micrometers and it is doped with Boron at a concentration of 650221636926853611520 cm^-3. The long gate region is of the material Silicon with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 669891740386186231808 cm^-3. The drain region is of the material Germanium with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 188736661340758147072 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.78)\n(define Lgl 0.12)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.05)\n(define Ld 0.05)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t489157294016715423744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t650221636926853611520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t669891740386186231808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t188736661340758147072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.56 micrometers and it is doped with Boron at a concentration of 382344112959407390720 cm^-3. The short gate region is of the material SiGe with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 806585500073866952704 cm^-3. The long gate region is of the material SiGe with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 946637282565759565824 cm^-3. The drain region is of the material Diamond with a length of 0.56 micrometers and it is doped with Boron at a concentration of 154420972159025479680 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.5)\n(define Lgl 0.28)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.56)\n(define Ld 0.56)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t382344112959407390720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t806585500073866952704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t946637282565759565824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t154420972159025479680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.28 micrometers and it is doped with Boron at a concentration of 528561627581770498048 cm^-3. The short gate region is of the material Diamond with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 856692158196489388032 cm^-3. The long gate region is of the material SiGe with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 204564620958414995456 cm^-3. The drain region is of the material GaN with a length of 0.28 micrometers and it is doped with Boron at a concentration of 560702566856516567040 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.29)\n(define Lgl 0.96)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t528561627581770498048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t856692158196489388032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t204564620958414995456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t560702566856516567040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 850033158902559801344 cm^-3. The short gate region is of the material Silicon with a length of 0.26 micrometers and it is doped with Boron at a concentration of 11248835203548753920 cm^-3. The long gate region is of the material Diamond with a length of 0.33 micrometers and it is doped with Boron at a concentration of 527985132400567648256 cm^-3. The drain region is of the material Germanium with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 296965137455411757056 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.26)\n(define Lgl 0.33)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.13)\n(define Ld 0.13)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t850033158902559801344\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t11248835203548753920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t527985132400567648256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t296965137455411757056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.3 micrometers and it is doped with Boron at a concentration of 196434616737031913472 cm^-3. The short gate region is of the material Diamond with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 673554601939422412800 cm^-3. The long gate region is of the material Silicon with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 154603944424754511872 cm^-3. The drain region is of the material Silicon with a length of 0.3 micrometers and it is doped with Boron at a concentration of 886142020026680868864 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.35)\n(define Lgl 0.27)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t196434616737031913472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t673554601939422412800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t154603944424754511872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t886142020026680868864\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 347642741807459729408 cm^-3. The short gate region is of the material Diamond with a length of 0.31 micrometers and it is doped with Boron at a concentration of 659831557610202333184 cm^-3. The long gate region is of the material SiGe with a length of 0.16 micrometers and it is doped with Boron at a concentration of 888484597332133150720 cm^-3. The drain region is of the material SiGe with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 852846103601405886464 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.31)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.19)\n(define Ld 0.19)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t347642741807459729408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t659831557610202333184\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t888484597332133150720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t852846103601405886464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 286554043374907981824 cm^-3. The short gate region is of the material SiGe with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 528691752710660816896 cm^-3. The long gate region is of the material Diamond with a length of 0.51 micrometers and it is doped with Boron at a concentration of 955515886409693790208 cm^-3. The drain region is of the material Silicon with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 302961404583680016384 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.43)\n(define Lgl 0.51)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.03)\n(define Ld 0.03)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t286554043374907981824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t528691752710660816896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t955515886409693790208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t302961404583680016384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.32 micrometers and it is doped with Boron at a concentration of 39328378467882344448 cm^-3. The short gate region is of the material SiGe with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 369927519544584830976 cm^-3. The long gate region is of the material SiGe with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 3250185452169673216 cm^-3. The drain region is of the material Silicon with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 991519336785101717504 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.96)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.32)\n(define Ld 0.32)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t39328378467882344448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t369927519544584830976\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t3250185452169673216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t991519336785101717504\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.92 micrometers and it is doped with Boron at a concentration of 666083551354616020992 cm^-3. The short gate region is of the material GaN with a length of 0.86 micrometers and it is doped with Boron at a concentration of 547783180849611931648 cm^-3. The long gate region is of the material GaN with a length of 0.83 micrometers and it is doped with Boron at a concentration of 726092898444516917248 cm^-3. The drain region is of the material SiGe with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 776028310658226978816 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.86)\n(define Lgl 0.83)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.92)\n(define Ld 0.92)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t666083551354616020992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t547783180849611931648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t726092898444516917248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t776028310658226978816\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 84615542550441132032 cm^-3. The short gate region is of the material SiGe with a length of 0.12 micrometers and it is doped with Boron at a concentration of 52994574632330649600 cm^-3. The long gate region is of the material Diamond with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 655918128489776283648 cm^-3. The drain region is of the material SiGe with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 300335344446606671872 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.12)\n(define Lgl 0.69)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.85)\n(define Ld 0.85)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t84615542550441132032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t52994574632330649600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t655918128489776283648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t300335344446606671872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.53 micrometers and it is doped with Boron at a concentration of 576911643454450434048 cm^-3. The short gate region is of the material SiGe with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 507388574408315633664 cm^-3. The long gate region is of the material Diamond with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 261768100296165425152 cm^-3. The drain region is of the material Silicon with a length of 0.53 micrometers and it is doped with Boron at a concentration of 288390076789986492416 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.66)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t576911643454450434048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t507388574408315633664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t261768100296165425152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t288390076789986492416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 716557776566964453376 cm^-3. The short gate region is of the material Diamond with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 393790837213969907712 cm^-3. The long gate region is of the material GaN with a length of 0.35 micrometers and it is doped with Boron at a concentration of 448906109675397971968 cm^-3. The drain region is of the material SiGe with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 569512059669340749824 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.95)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t716557776566964453376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t393790837213969907712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t448906109675397971968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t569512059669340749824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 644830573470197350400 cm^-3. The short gate region is of the material Diamond with a length of 0.28 micrometers and it is doped with Boron at a concentration of 741484258095604170752 cm^-3. The long gate region is of the material GaN with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 759611523070128947200 cm^-3. The drain region is of the material SiGe with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 993741127613173465088 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.28)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.94)\n(define Ld 0.94)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t644830573470197350400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t741484258095604170752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t759611523070128947200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t993741127613173465088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 201205046144646840320 cm^-3. The short gate region is of the material Germanium with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 624798176768539099136 cm^-3. The long gate region is of the material GaN with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 849815338383389360128 cm^-3. The drain region is of the material GaN with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 163287033478196396032 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.66)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t201205046144646840320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t624798176768539099136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t849815338383389360128\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t163287033478196396032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.03 micrometers and it is doped with Boron at a concentration of 723298917120475529216 cm^-3. The short gate region is of the material Diamond with a length of 0.91 micrometers and it is doped with Boron at a concentration of 546483745998042562560 cm^-3. The long gate region is of the material GaN with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 102005254550214639616 cm^-3. The drain region is of the material Diamond with a length of 0.03 micrometers and it is doped with Boron at a concentration of 913858994977021231104 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.91)\n(define Lgl 0.71)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.03)\n(define Ld 0.03)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t723298917120475529216\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t546483745998042562560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t102005254550214639616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t913858994977021231104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 968694662282722672640 cm^-3. The short gate region is of the material Diamond with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 616016316880927588352 cm^-3. The long gate region is of the material GaN with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 812098327779587522560 cm^-3. The drain region is of the material Germanium with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 205949647878937772032 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.27)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.47)\n(define Ld 0.47)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t968694662282722672640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t616016316880927588352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t812098327779587522560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t205949647878937772032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.01 micrometers and it is doped with Boron at a concentration of 337169192645800886272 cm^-3. The short gate region is of the material Diamond with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 56308956308749934592 cm^-3. The long gate region is of the material Germanium with a length of 0.7 micrometers and it is doped with Boron at a concentration of 574592904454515851264 cm^-3. The drain region is of the material SiGe with a length of 0.01 micrometers and it is doped with Boron at a concentration of 549787661284604116992 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.82)\n(define Lgl 0.7)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.01)\n(define Ld 0.01)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t337169192645800886272\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t56308956308749934592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t574592904454515851264\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t549787661284604116992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 308321491264091062272 cm^-3. The short gate region is of the material Germanium with a length of 0.98 micrometers and it is doped with Boron at a concentration of 600680416907019943936 cm^-3. The long gate region is of the material Germanium with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 778670021325133185024 cm^-3. The drain region is of the material Germanium with a length of 0.26 micrometers and it is doped with Boron at a concentration of 246059954431808110592 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.98)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.26)\n(define Ld 0.26)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t308321491264091062272\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t600680416907019943936\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t778670021325133185024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t246059954431808110592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 970874784364203737088 cm^-3. The short gate region is of the material Germanium with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 693232253518502166528 cm^-3. The long gate region is of the material SiGe with a length of 0.44 micrometers and it is doped with Boron at a concentration of 976920757823392186368 cm^-3. The drain region is of the material Diamond with a length of 0.58 micrometers and it is doped with Boron at a concentration of 850764423167280807936 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.84)\n(define Lgl 0.44)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t970874784364203737088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t693232253518502166528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t976920757823392186368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t850764423167280807936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 961621130840311857152 cm^-3. The short gate region is of the material Germanium with a length of 0.35 micrometers and it is doped with Boron at a concentration of 905846104895126110208 cm^-3. The long gate region is of the material SiGe with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 840026901666323628032 cm^-3. The drain region is of the material Germanium with a length of 0.77 micrometers and it is doped with Boron at a concentration of 910608455280496476160 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.35)\n(define Lgl 0.41)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.77)\n(define Ld 0.77)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t961621130840311857152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t905846104895126110208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t840026901666323628032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t910608455280496476160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 494435097754609778688 cm^-3. The short gate region is of the material Diamond with a length of 0.57 micrometers and it is doped with Boron at a concentration of 689510766445613940736 cm^-3. The long gate region is of the material Germanium with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 968378195049424224256 cm^-3. The drain region is of the material Diamond with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 804783589575678885888 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.57)\n(define Lgl 0.95)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.01)\n(define Ld 0.01)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t494435097754609778688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t689510766445613940736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t968378195049424224256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t804783589575678885888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 676499224361493200896 cm^-3. The short gate region is of the material GaN with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 990220884567864770560 cm^-3. The long gate region is of the material Germanium with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 186524851326221778944 cm^-3. The drain region is of the material Germanium with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 686832678046363287552 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.38)\n(define Lgl 0.63)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.47)\n(define Ld 0.47)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t676499224361493200896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t990220884567864770560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t186524851326221778944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t686832678046363287552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 403779975774977916928 cm^-3. The short gate region is of the material Germanium with a length of 0.43 micrometers and it is doped with Boron at a concentration of 988094384987874656256 cm^-3. The long gate region is of the material GaN with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 903860391012047912960 cm^-3. The drain region is of the material GaN with a length of 0.08 micrometers and it is doped with Boron at a concentration of 915325874653384146944 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.43)\n(define Lgl 0.67)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.08)\n(define Ld 0.08)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t403779975774977916928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t988094384987874656256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t903860391012047912960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t915325874653384146944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 538271142643503857664 cm^-3. The short gate region is of the material Silicon with a length of 0.14 micrometers and it is doped with Boron at a concentration of 365754986117885198336 cm^-3. The long gate region is of the material Germanium with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 322657331938772123648 cm^-3. The drain region is of the material SiGe with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 728105465127660552192 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.14)\n(define Lgl 0.97)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.31)\n(define Ld 0.31)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t538271142643503857664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t365754986117885198336\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t322657331938772123648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t728105465127660552192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 878362319698072436736 cm^-3. The short gate region is of the material GaN with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 664590477673870655488 cm^-3. The long gate region is of the material GaN with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 595604735875372548096 cm^-3. The drain region is of the material Germanium with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 314930469534812209152 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.5)\n(define Lgl 0.24)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.38)\n(define Ld 0.38)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t878362319698072436736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t664590477673870655488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t595604735875372548096\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t314930469534812209152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 477593453609500540928 cm^-3. The short gate region is of the material Germanium with a length of 0.36 micrometers and it is doped with Boron at a concentration of 736305671344649011200 cm^-3. The long gate region is of the material Germanium with a length of 0.81 micrometers and it is doped with Boron at a concentration of 641624260446054645760 cm^-3. The drain region is of the material Silicon with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 644811704632536858624 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.36)\n(define Lgl 0.81)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t477593453609500540928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t736305671344649011200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t641624260446054645760\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t644811704632536858624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 405136208647292190720 cm^-3. The short gate region is of the material Germanium with a length of 0.18 micrometers and it is doped with Boron at a concentration of 102584469457550082048 cm^-3. The long gate region is of the material Silicon with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 400071700044572917760 cm^-3. The drain region is of the material Germanium with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 148906183843379445760 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.18)\n(define Lgl 0.47)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.63)\n(define Ld 0.63)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t405136208647292190720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t102584469457550082048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t400071700044572917760\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t148906183843379445760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 198505777618795167744 cm^-3. The short gate region is of the material GaN with a length of 0.62 micrometers and it is doped with Boron at a concentration of 31730278867995287552 cm^-3. The long gate region is of the material SiGe with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 357689903684115890176 cm^-3. The drain region is of the material Diamond with a length of 0.96 micrometers and it is doped with Boron at a concentration of 810552649771769659392 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.62)\n(define Lgl 0.32)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t198505777618795167744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t31730278867995287552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t357689903684115890176\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t810552649771769659392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.39 micrometers and it is doped with Boron at a concentration of 615847299251178831872 cm^-3. The short gate region is of the material SiGe with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 473093291514213171200 cm^-3. The long gate region is of the material Diamond with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 110048733889278148608 cm^-3. The drain region is of the material GaN with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 195070400896000851968 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.24)\n(define Lgl 0.39)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.39)\n(define Ld 0.39)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t615847299251178831872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t473093291514213171200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t110048733889278148608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t195070400896000851968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.4 micrometers and it is doped with Boron at a concentration of 88974725048111480832 cm^-3. The short gate region is of the material Diamond with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 391488583393361133568 cm^-3. The long gate region is of the material Silicon with a length of 0.42 micrometers and it is doped with Boron at a concentration of 22076833689431937024 cm^-3. The drain region is of the material Silicon with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 551450628312236032000 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.92)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t88974725048111480832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t391488583393361133568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t22076833689431937024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t551450628312236032000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 92879785811050151936 cm^-3. The short gate region is of the material Diamond with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 207389332505240141824 cm^-3. The long gate region is of the material SiGe with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 58893457486395416576 cm^-3. The drain region is of the material Diamond with a length of 0.11 micrometers and it is doped with Boron at a concentration of 9386571629050812416 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.51)\n(define Lgl 0.23)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.11)\n(define Ld 0.11)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t92879785811050151936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t207389332505240141824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t58893457486395416576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t9386571629050812416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 481252303228709109760 cm^-3. The short gate region is of the material GaN with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 233872867313303388160 cm^-3. The long gate region is of the material GaN with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 191622687792914628608 cm^-3. The drain region is of the material Germanium with a length of 0.8 micrometers and it is doped with Boron at a concentration of 869969882028704268288 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.86)\n(define Lgl 0.17)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.8)\n(define Ld 0.8)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t481252303228709109760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t233872867313303388160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t191622687792914628608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t869969882028704268288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.27 micrometers and it is doped with Boron at a concentration of 390158638725556600832 cm^-3. The short gate region is of the material GaN with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 309718535791045246976 cm^-3. The long gate region is of the material SiGe with a length of 0.23 micrometers and it is doped with Boron at a concentration of 629938127619347709952 cm^-3. The drain region is of the material GaN with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 865568683489759854592 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.18)\n(define Lgl 0.23)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.27)\n(define Ld 0.27)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t390158638725556600832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t309718535791045246976\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t629938127619347709952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t865568683489759854592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 365047078896631676928 cm^-3. The short gate region is of the material Silicon with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 624951721847595728896 cm^-3. The long gate region is of the material Silicon with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 876561963063522361344 cm^-3. The drain region is of the material Germanium with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 267515574002600345600 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.92)\n(define Lgl 0.21)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.99)\n(define Ld 0.99)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t365047078896631676928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t624951721847595728896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t876561963063522361344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t267515574002600345600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 548578383361610874880 cm^-3. The short gate region is of the material Germanium with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 495923309612998066176 cm^-3. The long gate region is of the material GaN with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 965825086289848041472 cm^-3. The drain region is of the material GaN with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 514463643190908944384 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.85)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.52)\n(define Ld 0.52)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t548578383361610874880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t495923309612998066176\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t965825086289848041472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t514463643190908944384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 422100772306866798592 cm^-3. The short gate region is of the material GaN with a length of 0.97 micrometers and it is doped with Boron at a concentration of 149441737041023762432 cm^-3. The long gate region is of the material SiGe with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 40313235667754090496 cm^-3. The drain region is of the material Silicon with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 722776225352351088640 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.97)\n(define Lgl 0.51)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t422100772306866798592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t149441737041023762432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t40313235667754090496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t722776225352351088640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 9422367233867573248 cm^-3. The short gate region is of the material GaN with a length of 0.17 micrometers and it is doped with Boron at a concentration of 860190701991968112640 cm^-3. The long gate region is of the material Silicon with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 397582960246152757248 cm^-3. The drain region is of the material Silicon with a length of 0.34 micrometers and it is doped with Boron at a concentration of 921562333420180602880 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.17)\n(define Lgl 0.53)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.34)\n(define Ld 0.34)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t9422367233867573248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t860190701991968112640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t397582960246152757248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t921562333420180602880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.47 micrometers and it is doped with Boron at a concentration of 736801003577536020480 cm^-3. The short gate region is of the material Diamond with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 992015043167850463232 cm^-3. The long gate region is of the material Diamond with a length of 0.92 micrometers and it is doped with Boron at a concentration of 23832059625389101056 cm^-3. The drain region is of the material Silicon with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 151541085894805880832 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.48)\n(define Lgl 0.92)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.47)\n(define Ld 0.47)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t736801003577536020480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t992015043167850463232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t23832059625389101056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t151541085894805880832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 766798113940312555520 cm^-3. The short gate region is of the material Diamond with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 181953723437598179328 cm^-3. The long gate region is of the material Silicon with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 917414238044997025792 cm^-3. The drain region is of the material GaN with a length of 0.44 micrometers and it is doped with Boron at a concentration of 292259011443957432320 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.73)\n(define Lgl 0.83)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.44)\n(define Ld 0.44)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t766798113940312555520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t181953723437598179328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t917414238044997025792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t292259011443957432320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.73 micrometers and it is doped with Boron at a concentration of 378313435454004789248 cm^-3. The short gate region is of the material Silicon with a length of 0.87 micrometers and it is doped with Boron at a concentration of 702978548247906353152 cm^-3. The long gate region is of the material SiGe with a length of 0.6 micrometers and it is doped with Boron at a concentration of 522623227057877549056 cm^-3. The drain region is of the material Silicon with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 517395528655896313856 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.87)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.73)\n(define Ld 0.73)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t378313435454004789248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t702978548247906353152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t522623227057877549056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t517395528655896313856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 180296057890678571008 cm^-3. The short gate region is of the material GaN with a length of 0.8 micrometers and it is doped with Boron at a concentration of 737150796324047945728 cm^-3. The long gate region is of the material Germanium with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 724773933778780684288 cm^-3. The drain region is of the material Silicon with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 18468461997513560064 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.8)\n(define Lgl 0.17)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.92)\n(define Ld 0.92)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t180296057890678571008\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t737150796324047945728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t724773933778780684288\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t18468461997513560064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.3 micrometers and it is doped with Boron at a concentration of 544101803512255348736 cm^-3. The short gate region is of the material SiGe with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 657584423444942028800 cm^-3. The long gate region is of the material SiGe with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 394310816974865825792 cm^-3. The drain region is of the material Silicon with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 394183703390380752896 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.8)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t544101803512255348736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t657584423444942028800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t394310816974865825792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t394183703390380752896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 348867460114144296960 cm^-3. The short gate region is of the material SiGe with a length of 0.27 micrometers and it is doped with Boron at a concentration of 374814394739407192064 cm^-3. The long gate region is of the material Diamond with a length of 0.12 micrometers and it is doped with Arsenic at a concentration of 278530311806815240192 cm^-3. The drain region is of the material Silicon with a length of 0.48 micrometers and it is doped with Boron at a concentration of 777160862261644492800 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.27)\n(define Lgl 0.12)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.48)\n(define Ld 0.48)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t348867460114144296960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t374814394739407192064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t278530311806815240192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t777160862261644492800\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 176198182758833422336 cm^-3. The short gate region is of the material Silicon with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 235914357129901867008 cm^-3. The long gate region is of the material Germanium with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 195375679041054310400 cm^-3. The drain region is of the material Germanium with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 280936632265920348160 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.61)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.02)\n(define Ld 0.02)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t176198182758833422336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t235914357129901867008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t195375679041054310400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t280936632265920348160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 788648486467546513408 cm^-3. The short gate region is of the material Silicon with a length of 0.31 micrometers and it is doped with Boron at a concentration of 810098515121539645440 cm^-3. The long gate region is of the material Germanium with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 168113188008959016960 cm^-3. The drain region is of the material Silicon with a length of 0.15 micrometers and it is doped with Boron at a concentration of 928624436740770627584 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.31)\n(define Lgl 0.82)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t788648486467546513408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t810098515121539645440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t168113188008959016960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t928624436740770627584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 197220764440910987264 cm^-3. The short gate region is of the material Germanium with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 897843419980663095296 cm^-3. The long gate region is of the material Silicon with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 859714524618974167040 cm^-3. The drain region is of the material Diamond with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 61109322474184400896 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.17)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.13)\n(define Ld 0.13)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t197220764440910987264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t897843419980663095296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t859714524618974167040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t61109322474184400896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 385870680360076705792 cm^-3. The short gate region is of the material GaN with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 497897371017967828992 cm^-3. The long gate region is of the material Diamond with a length of 0.03 micrometers and it is doped with Boron at a concentration of 276170939330013200384 cm^-3. The drain region is of the material Silicon with a length of 0.07 micrometers and it is doped with Boron at a concentration of 52047336099214221312 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.23)\n(define Lgl 0.03)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.07)\n(define Ld 0.07)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t385870680360076705792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t497897371017967828992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t276170939330013200384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t52047336099214221312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.71 micrometers and it is doped with Boron at a concentration of 656572650443442356224 cm^-3. The short gate region is of the material Silicon with a length of 0.71 micrometers and it is doped with Boron at a concentration of 789431450342374113280 cm^-3. The long gate region is of the material Diamond with a length of 0.94 micrometers and it is doped with Boron at a concentration of 331168767390923882496 cm^-3. The drain region is of the material GaN with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 37828695551054594048 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.71)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.71)\n(define Ld 0.71)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t656572650443442356224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t789431450342374113280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t331168767390923882496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t37828695551054594048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.48 micrometers and it is doped with Boron at a concentration of 606717704225596506112 cm^-3. The short gate region is of the material Diamond with a length of 1.0 micrometers and it is doped with Arsenic at a concentration of 338353527602840862720 cm^-3. The long gate region is of the material Germanium with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 578147480921547735040 cm^-3. The drain region is of the material Diamond with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 514475506216747532288 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 1.0)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.48)\n(define Ld 0.48)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t606717704225596506112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t338353527602840862720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t578147480921547735040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t514475506216747532288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 12895237053228728320 cm^-3. The short gate region is of the material Silicon with a length of 0.72 micrometers and it is doped with Arsenic at a concentration of 17035785001271957504 cm^-3. The long gate region is of the material SiGe with a length of 0.5 micrometers and it is doped with Boron at a concentration of 296233550229112487936 cm^-3. The drain region is of the material Germanium with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 420343052679695826944 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.72)\n(define Lgl 0.5)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.38)\n(define Ld 0.38)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t12895237053228728320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t17035785001271957504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t296233550229112487936\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t420343052679695826944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.28 micrometers and it is doped with Boron at a concentration of 577597275331964043264 cm^-3. The short gate region is of the material SiGe with a length of 0.6 micrometers and it is doped with Boron at a concentration of 889107461797086363648 cm^-3. The long gate region is of the material SiGe with a length of 0.94 micrometers and it is doped with Boron at a concentration of 615848736448502824960 cm^-3. The drain region is of the material Diamond with a length of 0.28 micrometers and it is doped with Boron at a concentration of 590245045170210209792 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.6)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t577597275331964043264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t889107461797086363648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t615848736448502824960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t590245045170210209792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 632861232799645827072 cm^-3. The short gate region is of the material SiGe with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 997729068787116933120 cm^-3. The long gate region is of the material Silicon with a length of 0.83 micrometers and it is doped with Boron at a concentration of 452464755943215988736 cm^-3. The drain region is of the material Silicon with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 871190002590597644288 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.71)\n(define Lgl 0.83)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.43)\n(define Ld 0.43)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t632861232799645827072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t997729068787116933120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t452464755943215988736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t871190002590597644288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 83451673133062488064 cm^-3. The short gate region is of the material Silicon with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 431871335150846476288 cm^-3. The long gate region is of the material Germanium with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 666165589392754999296 cm^-3. The drain region is of the material Diamond with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 707972069241179340800 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.13)\n(define Lgl 0.12)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.8)\n(define Ld 0.8)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t83451673133062488064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t431871335150846476288\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t666165589392754999296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t707972069241179340800\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 963652304925694361600 cm^-3. The short gate region is of the material Germanium with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 207758492167997325312 cm^-3. The long gate region is of the material Silicon with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 349461283610599751680 cm^-3. The drain region is of the material GaN with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 635682268482653257728 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.29)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.06)\n(define Ld 0.06)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t963652304925694361600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t207758492167997325312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t349461283610599751680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t635682268482653257728\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.04 micrometers and it is doped with Boron at a concentration of 136566713987638132736 cm^-3. The short gate region is of the material Diamond with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 411415319247461810176 cm^-3. The long gate region is of the material GaN with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 576057676198166528000 cm^-3. The drain region is of the material Germanium with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 385189302320570433536 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.21)\n(define Lgl 0.36)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t136566713987638132736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t411415319247461810176\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t576057676198166528000\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t385189302320570433536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.03 micrometers and it is doped with Boron at a concentration of 374055033523331661824 cm^-3. The short gate region is of the material Silicon with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 858235300785323900928 cm^-3. The long gate region is of the material SiGe with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 143247894828083331072 cm^-3. The drain region is of the material Diamond with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 280090690528466272256 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.83)\n(define Lgl 0.33)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.03)\n(define Ld 0.03)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t374055033523331661824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t858235300785323900928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t143247894828083331072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t280090690528466272256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 328377190769351065600 cm^-3. The short gate region is of the material GaN with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 182112402538621861888 cm^-3. The long gate region is of the material Silicon with a length of 0.32 micrometers and it is doped with Boron at a concentration of 566485352163056943104 cm^-3. The drain region is of the material SiGe with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 784711589393922523136 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.4)\n(define Lgl 0.32)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t328377190769351065600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t182112402538621861888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t566485352163056943104\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t784711589393922523136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.69 micrometers and it is doped with Boron at a concentration of 583852668558365032448 cm^-3. The short gate region is of the material Diamond with a length of 0.98 micrometers and it is doped with Arsenic at a concentration of 729980877690004045824 cm^-3. The long gate region is of the material Germanium with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 184803417408545882112 cm^-3. The drain region is of the material GaN with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 977447221255871528960 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.98)\n(define Lgl 0.83)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.69)\n(define Ld 0.69)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t583852668558365032448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t729980877690004045824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t184803417408545882112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t977447221255871528960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 963884015025993154560 cm^-3. The short gate region is of the material Germanium with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 629942049591160209408 cm^-3. The long gate region is of the material GaN with a length of 0.94 micrometers and it is doped with Boron at a concentration of 810784477289655566336 cm^-3. The drain region is of the material Germanium with a length of 0.3 micrometers and it is doped with Boron at a concentration of 494095902051019653120 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.66)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t963884015025993154560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t629942049591160209408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t810784477289655566336\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t494095902051019653120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 308963482110451384320 cm^-3. The short gate region is of the material Silicon with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 688251487394868756480 cm^-3. The long gate region is of the material SiGe with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 442644007396894703616 cm^-3. The drain region is of the material GaN with a length of 0.9 micrometers and it is doped with Boron at a concentration of 592162784569906036736 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.75)\n(define Lgl 0.83)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t308963482110451384320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t688251487394868756480\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t442644007396894703616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t592162784569906036736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 945347609280635731968 cm^-3. The short gate region is of the material Diamond with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 855804854899983122432 cm^-3. The long gate region is of the material GaN with a length of 0.16 micrometers and it is doped with Boron at a concentration of 5261680283372353536 cm^-3. The drain region is of the material Diamond with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 631093170714223837184 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.71)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.48)\n(define Ld 0.48)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t945347609280635731968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t855804854899983122432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t5261680283372353536\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t631093170714223837184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 664977437694199201792 cm^-3. The short gate region is of the material GaN with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 423229614235740667904 cm^-3. The long gate region is of the material Diamond with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 440157490284620677120 cm^-3. The drain region is of the material Silicon with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 784896865763120513024 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.72)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t664977437694199201792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t423229614235740667904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t440157490284620677120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t784896865763120513024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 486222509682521407488 cm^-3. The short gate region is of the material Diamond with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 796874027771141685248 cm^-3. The long gate region is of the material Silicon with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 230624815566258896896 cm^-3. The drain region is of the material Germanium with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 880782846150822068224 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.41)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.8)\n(define Ld 0.8)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t486222509682521407488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t796874027771141685248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t230624815566258896896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t880782846150822068224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 400639609619621216256 cm^-3. The short gate region is of the material Diamond with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 245286994679649304576 cm^-3. The long gate region is of the material SiGe with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 532912779220397850624 cm^-3. The drain region is of the material Silicon with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 522939638213179342848 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.92)\n(define Lgl 0.73)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.66)\n(define Ld 0.66)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t400639609619621216256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t245286994679649304576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t532912779220397850624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t522939638213179342848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 295560612282456080384 cm^-3. The short gate region is of the material Germanium with a length of 1.0 micrometers and it is doped with Arsenic at a concentration of 337953261058560360448 cm^-3. The long gate region is of the material SiGe with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 704098364188051374080 cm^-3. The drain region is of the material Diamond with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 785786818131926056960 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 1.0)\n(define Lgl 0.43)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.89)\n(define Ld 0.89)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t295560612282456080384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t337953261058560360448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t704098364188051374080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t785786818131926056960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.46 micrometers and it is doped with Boron at a concentration of 261714251601045094400 cm^-3. The short gate region is of the material Diamond with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 713637839263688818688 cm^-3. The long gate region is of the material GaN with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 262239709037791608832 cm^-3. The drain region is of the material GaN with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 825673735717080137728 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.6)\n(define Lgl 0.21)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t261714251601045094400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t713637839263688818688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t262239709037791608832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t825673735717080137728\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 708202890904517345280 cm^-3. The short gate region is of the material Germanium with a length of 0.54 micrometers and it is doped with Boron at a concentration of 915156283738120388608 cm^-3. The long gate region is of the material Diamond with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 738457556925212524544 cm^-3. The drain region is of the material Germanium with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 31511560656681533440 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.54)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.71)\n(define Ld 0.71)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t708202890904517345280\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t915156283738120388608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t738457556925212524544\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t31511560656681533440\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 838189083595014668288 cm^-3. The short gate region is of the material GaN with a length of 0.67 micrometers and it is doped with Boron at a concentration of 595199544039387037696 cm^-3. The long gate region is of the material GaN with a length of 0.71 micrometers and it is doped with Boron at a concentration of 392094927861531541504 cm^-3. The drain region is of the material SiGe with a length of 0.05 micrometers and it is doped with Boron at a concentration of 602096078437683560448 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.67)\n(define Lgl 0.71)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.05)\n(define Ld 0.05)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t838189083595014668288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t595199544039387037696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t392094927861531541504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t602096078437683560448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.61 micrometers and it is doped with Boron at a concentration of 684191861921583333376 cm^-3. The short gate region is of the material Germanium with a length of 0.83 micrometers and it is doped with Boron at a concentration of 113307416650736025600 cm^-3. The long gate region is of the material GaN with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 392174570841897304064 cm^-3. The drain region is of the material SiGe with a length of 0.61 micrometers and it is doped with Boron at a concentration of 933366472920528977920 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.83)\n(define Lgl 0.49)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.61)\n(define Ld 0.61)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t684191861921583333376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t113307416650736025600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t392174570841897304064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t933366472920528977920\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 39244007410787614720 cm^-3. The short gate region is of the material SiGe with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 903643553109920055296 cm^-3. The long gate region is of the material Diamond with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 55480196856694857728 cm^-3. The drain region is of the material Germanium with a length of 0.19 micrometers and it is doped with Boron at a concentration of 568115033185928478720 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.27)\n(define Lgl 0.48)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.19)\n(define Ld 0.19)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t39244007410787614720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t903643553109920055296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t55480196856694857728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t568115033185928478720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.28 micrometers and it is doped with Boron at a concentration of 241705039803690811392 cm^-3. The short gate region is of the material Germanium with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 527828465864815017984 cm^-3. The long gate region is of the material GaN with a length of 0.72 micrometers and it is doped with Boron at a concentration of 25688949245655797760 cm^-3. The drain region is of the material SiGe with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 815080334057497821184 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.66)\n(define Lgl 0.72)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t241705039803690811392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t527828465864815017984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t25688949245655797760\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t815080334057497821184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 189869117511318634496 cm^-3. The short gate region is of the material GaN with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 388450997429175713792 cm^-3. The long gate region is of the material GaN with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 766112103125538701312 cm^-3. The drain region is of the material GaN with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 564726710396412887040 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.85)\n(define Lgl 0.61)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.7)\n(define Ld 0.7)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t189869117511318634496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t388450997429175713792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t766112103125538701312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t564726710396412887040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 281021804079629697024 cm^-3. The short gate region is of the material Germanium with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 888889007122109038592 cm^-3. The long gate region is of the material GaN with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 4096762326271705600 cm^-3. The drain region is of the material Germanium with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 655896770288239116288 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.76)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.14)\n(define Ld 0.14)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t281021804079629697024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t888889007122109038592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t4096762326271705600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t655896770288239116288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 900269797802106159104 cm^-3. The short gate region is of the material Diamond with a length of 0.65 micrometers and it is doped with Phosphorus at a concentration of 612414973506731376640 cm^-3. The long gate region is of the material Silicon with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 322488276794371080192 cm^-3. The drain region is of the material Diamond with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 587892597811021479936 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.65)\n(define Lgl 0.72)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.26)\n(define Ld 0.26)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t900269797802106159104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t612414973506731376640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t322488276794371080192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t587892597811021479936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 57671623827526254592 cm^-3. The short gate region is of the material Diamond with a length of 0.43 micrometers and it is doped with Boron at a concentration of 666437053218184757248 cm^-3. The long gate region is of the material Diamond with a length of 0.2 micrometers and it is doped with Boron at a concentration of 837647961601313079296 cm^-3. The drain region is of the material SiGe with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 731377178916823498752 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.43)\n(define Lgl 0.2)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t57671623827526254592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t666437053218184757248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t837647961601313079296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t731377178916823498752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.21 micrometers and it is doped with Boron at a concentration of 412561980200164130816 cm^-3. The short gate region is of the material SiGe with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 469618401740895813632 cm^-3. The long gate region is of the material Germanium with a length of 0.64 micrometers and it is doped with Boron at a concentration of 814779920533594701824 cm^-3. The drain region is of the material SiGe with a length of 0.21 micrometers and it is doped with Boron at a concentration of 204578669589501542400 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.96)\n(define Lgl 0.64)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t412561980200164130816\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t469618401740895813632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t814779920533594701824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t204578669589501542400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 375887510215384891392 cm^-3. The short gate region is of the material GaN with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 257021687243077517312 cm^-3. The long gate region is of the material Silicon with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 108436822065158635520 cm^-3. The drain region is of the material Diamond with a length of 0.79 micrometers and it is doped with Boron at a concentration of 670193752732590145536 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.02)\n(define Lgl 0.08)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.79)\n(define Ld 0.79)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t375887510215384891392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t257021687243077517312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t108436822065158635520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t670193752732590145536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 196651709013077688320 cm^-3. The short gate region is of the material Diamond with a length of 0.68 micrometers and it is doped with Boron at a concentration of 339860470385154195456 cm^-3. The long gate region is of the material SiGe with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 532128675897139265536 cm^-3. The drain region is of the material SiGe with a length of 0.15 micrometers and it is doped with Boron at a concentration of 135223149550064992256 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.68)\n(define Lgl 0.95)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t196651709013077688320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t339860470385154195456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t532128675897139265536\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t135223149550064992256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 109987248254396628992 cm^-3. The short gate region is of the material GaN with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 336324313272583061504 cm^-3. The long gate region is of the material Silicon with a length of 0.01 micrometers and it is doped with Boron at a concentration of 343885985520782016512 cm^-3. The drain region is of the material Silicon with a length of 0.19 micrometers and it is doped with Boron at a concentration of 11629387698903980032 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.44)\n(define Lgl 0.01)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.19)\n(define Ld 0.19)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t109987248254396628992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t336324313272583061504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t343885985520782016512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t11629387698903980032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 624018231661368442880 cm^-3. The short gate region is of the material Germanium with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 568324171529252241408 cm^-3. The long gate region is of the material Germanium with a length of 0.23 micrometers and it is doped with Boron at a concentration of 306962702510149468160 cm^-3. The drain region is of the material SiGe with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 517440685878595289088 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.47)\n(define Lgl 0.23)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.31)\n(define Ld 0.31)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t624018231661368442880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t568324171529252241408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t306962702510149468160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t517440685878595289088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 759728451981739687936 cm^-3. The short gate region is of the material SiGe with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 162581544160539082752 cm^-3. The long gate region is of the material Silicon with a length of 0.72 micrometers and it is doped with Arsenic at a concentration of 195295575668871725056 cm^-3. The drain region is of the material Diamond with a length of 0.5 micrometers and it is doped with Boron at a concentration of 680890567200053133312 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.91)\n(define Lgl 0.72)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.5)\n(define Ld 0.5)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t759728451981739687936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t162581544160539082752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t195295575668871725056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t680890567200053133312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 237341006129515429888 cm^-3. The short gate region is of the material Germanium with a length of 0.84 micrometers and it is doped with Boron at a concentration of 730114634090095443968 cm^-3. The long gate region is of the material Silicon with a length of 0.75 micrometers and it is doped with Arsenic at a concentration of 553383763097994264576 cm^-3. The drain region is of the material Silicon with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 768037417443663675392 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.84)\n(define Lgl 0.75)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.99)\n(define Ld 0.99)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t237341006129515429888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t730114634090095443968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t553383763097994264576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t768037417443663675392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.98 micrometers and it is doped with Arsenic at a concentration of 393199801341819224064 cm^-3. The short gate region is of the material GaN with a length of 0.1 micrometers and it is doped with Boron at a concentration of 453331242915268001792 cm^-3. The long gate region is of the material Diamond with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 207620987593408643072 cm^-3. The drain region is of the material Silicon with a length of 0.98 micrometers and it is doped with Arsenic at a concentration of 69023078134344196096 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.1)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.98)\n(define Ld 0.98)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t393199801341819224064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t453331242915268001792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t207620987593408643072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t69023078134344196096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 729544264284762800128 cm^-3. The short gate region is of the material Silicon with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 636363738480138780672 cm^-3. The long gate region is of the material GaN with a length of 0.56 micrometers and it is doped with Boron at a concentration of 694226680456113946624 cm^-3. The drain region is of the material Silicon with a length of 0.28 micrometers and it is doped with Boron at a concentration of 560055689572600119296 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.07)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t729544264284762800128\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t636363738480138780672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t694226680456113946624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t560055689572600119296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 74191975106370748416 cm^-3. The short gate region is of the material SiGe with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 469433183381639790592 cm^-3. The long gate region is of the material GaN with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 595013152281311444992 cm^-3. The drain region is of the material Germanium with a length of 0.94 micrometers and it is doped with Boron at a concentration of 217748822799748956160 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.48)\n(define Lgl 0.88)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.94)\n(define Ld 0.94)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t74191975106370748416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t469433183381639790592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t595013152281311444992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t217748822799748956160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.5 micrometers and it is doped with Boron at a concentration of 864012078339443392512 cm^-3. The short gate region is of the material Germanium with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 234913490688380600320 cm^-3. The long gate region is of the material GaN with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 734317003444623900672 cm^-3. The drain region is of the material Diamond with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 918153932149992980480 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.78)\n(define Lgl 0.49)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.5)\n(define Ld 0.5)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t864012078339443392512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t234913490688380600320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t734317003444623900672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t918153932149992980480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.58 micrometers and it is doped with Boron at a concentration of 722963620103873757184 cm^-3. The short gate region is of the material Silicon with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 699309948615283441664 cm^-3. The long gate region is of the material Diamond with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 10949157118387675136 cm^-3. The drain region is of the material SiGe with a length of 0.58 micrometers and it is doped with Boron at a concentration of 806324901240100356096 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.69)\n(define Lgl 0.63)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t722963620103873757184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t699309948615283441664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t10949157118387675136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t806324901240100356096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 1.0 micrometers and it is doped with Arsenic at a concentration of 157881772102665502720 cm^-3. The short gate region is of the material GaN with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 14683557574281508864 cm^-3. The long gate region is of the material Diamond with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 62646348490997293056 cm^-3. The drain region is of the material GaN with a length of 1.0 micrometers and it is doped with Phosphorus at a concentration of 117831032776135393280 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.1)\n(define Lgl 0.76)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 1.0)\n(define Ld 1.0)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t157881772102665502720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t14683557574281508864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t62646348490997293056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t117831032776135393280\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 166367714151966343168 cm^-3. The short gate region is of the material GaN with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 350328865829915721728 cm^-3. The long gate region is of the material SiGe with a length of 0.01 micrometers and it is doped with Boron at a concentration of 581066863524756324352 cm^-3. The drain region is of the material GaN with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 786739555427389669376 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.34)\n(define Lgl 0.01)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.6)\n(define Ld 0.6)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t166367714151966343168\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t350328865829915721728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t581066863524756324352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t786739555427389669376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 621827728544682999808 cm^-3. The short gate region is of the material SiGe with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 418262989384617689088 cm^-3. The long gate region is of the material Diamond with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 566692784987515650048 cm^-3. The drain region is of the material Silicon with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 721339521359495954432 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.26)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.99)\n(define Ld 0.99)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t621827728544682999808\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t418262989384617689088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t566692784987515650048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t721339521359495954432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 977651397813275590656 cm^-3. The short gate region is of the material Silicon with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 229390551490234515456 cm^-3. The long gate region is of the material Diamond with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 48676223071704752128 cm^-3. The drain region is of the material Germanium with a length of 0.74 micrometers and it is doped with Boron at a concentration of 939388855093354692608 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.62)\n(define Lgl 0.12)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.74)\n(define Ld 0.74)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t977651397813275590656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t229390551490234515456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t48676223071704752128\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t939388855093354692608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.95 micrometers and it is doped with Boron at a concentration of 220577348320661307392 cm^-3. The short gate region is of the material SiGe with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 667339483641264603136 cm^-3. The long gate region is of the material GaN with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 773472127727186083840 cm^-3. The drain region is of the material Diamond with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 806226955140197384192 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.4)\n(define Lgl 0.9)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.95)\n(define Ld 0.95)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t220577348320661307392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t667339483641264603136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t773472127727186083840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t806226955140197384192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.93 micrometers and it is doped with Boron at a concentration of 93414660359044595712 cm^-3. The short gate region is of the material Germanium with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 342489509016144314368 cm^-3. The long gate region is of the material Diamond with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 559178227435448041472 cm^-3. The drain region is of the material Germanium with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 236115774281279733760 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.77)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.93)\n(define Ld 0.93)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t93414660359044595712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t342489509016144314368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t559178227435448041472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t236115774281279733760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 524561465095518420992 cm^-3. The short gate region is of the material GaN with a length of 0.8 micrometers and it is doped with Boron at a concentration of 269631354485875736576 cm^-3. The long gate region is of the material Diamond with a length of 0.61 micrometers and it is doped with Boron at a concentration of 195660908299024171008 cm^-3. The drain region is of the material Silicon with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 493769484208774447104 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.8)\n(define Lgl 0.61)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t524561465095518420992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t269631354485875736576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t195660908299024171008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t493769484208774447104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 552815972650295623680 cm^-3. The short gate region is of the material Silicon with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 372240733136220323840 cm^-3. The long gate region is of the material GaN with a length of 0.59 micrometers and it is doped with Boron at a concentration of 607157282440263368704 cm^-3. The drain region is of the material SiGe with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 146901569865756000256 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.58)\n(define Lgl 0.59)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.97)\n(define Ld 0.97)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t552815972650295623680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t372240733136220323840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t607157282440263368704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t146901569865756000256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 295838559031680696320 cm^-3. The short gate region is of the material Diamond with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 569959125066742890496 cm^-3. The long gate region is of the material SiGe with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 741734209931670585344 cm^-3. The drain region is of the material Diamond with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 150568789154377465856 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.11)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t295838559031680696320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t569959125066742890496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t741734209931670585344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t150568789154377465856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 22982112517762744320 cm^-3. The short gate region is of the material Silicon with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 58335468060657713152 cm^-3. The long gate region is of the material GaN with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 293411816091399094272 cm^-3. The drain region is of the material Diamond with a length of 0.51 micrometers and it is doped with Boron at a concentration of 852146524346584662016 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.59)\n(define Lgl 0.2)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.51)\n(define Ld 0.51)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t22982112517762744320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t58335468060657713152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t293411816091399094272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t852146524346584662016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 650760749235184467968 cm^-3. The short gate region is of the material SiGe with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 21554212154651602944 cm^-3. The long gate region is of the material SiGe with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 623132442245085134848 cm^-3. The drain region is of the material Germanium with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 756863867447612801024 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.63)\n(define Lgl 0.78)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.49)\n(define Ld 0.49)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t650760749235184467968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t21554212154651602944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t623132442245085134848\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t756863867447612801024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 864526530977070579712 cm^-3. The short gate region is of the material SiGe with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 533350683433595961344 cm^-3. The long gate region is of the material GaN with a length of 0.1 micrometers and it is doped with Boron at a concentration of 875311660791936843776 cm^-3. The drain region is of the material SiGe with a length of 0.47 micrometers and it is doped with Boron at a concentration of 128584836639315640320 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.01)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.47)\n(define Ld 0.47)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t864526530977070579712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t533350683433595961344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t875311660791936843776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t128584836639315640320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 787639369710376976384 cm^-3. The short gate region is of the material SiGe with a length of 0.62 micrometers and it is doped with Boron at a concentration of 514273111356093628416 cm^-3. The long gate region is of the material SiGe with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 128999489106761056256 cm^-3. The drain region is of the material GaN with a length of 0.59 micrometers and it is doped with Boron at a concentration of 139688065679317204992 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.62)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t787639369710376976384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t514273111356093628416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t128999489106761056256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t139688065679317204992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 944661208281582272512 cm^-3. The short gate region is of the material GaN with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 475919856768917962752 cm^-3. The long gate region is of the material Silicon with a length of 0.27 micrometers and it is doped with Boron at a concentration of 465170848559117107200 cm^-3. The drain region is of the material SiGe with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 755762663497672818688 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.93)\n(define Lgl 0.27)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.8)\n(define Ld 0.8)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t944661208281582272512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t475919856768917962752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t465170848559117107200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t755762663497672818688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.14 micrometers and it is doped with Boron at a concentration of 812354189636129914880 cm^-3. The short gate region is of the material Silicon with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 634629388362738696192 cm^-3. The long gate region is of the material Germanium with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 855698677405073014784 cm^-3. The drain region is of the material GaN with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 361899343815490273280 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.35)\n(define Lgl 0.05)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.14)\n(define Ld 0.14)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t812354189636129914880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t634629388362738696192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t855698677405073014784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t361899343815490273280\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 716644084300761530368 cm^-3. The short gate region is of the material SiGe with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 157095850370931163136 cm^-3. The long gate region is of the material Germanium with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 697281551384597102592 cm^-3. The drain region is of the material GaN with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 279308666707480739840 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.23)\n(define Lgl 0.8)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.6)\n(define Ld 0.6)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t716644084300761530368\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t157095850370931163136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t697281551384597102592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t279308666707480739840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.21 micrometers and it is doped with Boron at a concentration of 237782043778636087296 cm^-3. The short gate region is of the material Germanium with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 515611681621918351360 cm^-3. The long gate region is of the material Diamond with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 309527953233460461568 cm^-3. The drain region is of the material GaN with a length of 0.21 micrometers and it is doped with Boron at a concentration of 720574456324297457664 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.36)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t237782043778636087296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t515611681621918351360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t309527953233460461568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t720574456324297457664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.78 micrometers and it is doped with Boron at a concentration of 813335440558921089024 cm^-3. The short gate region is of the material Silicon with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 767834596572539650048 cm^-3. The long gate region is of the material Germanium with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 607816006460881764352 cm^-3. The drain region is of the material SiGe with a length of 0.78 micrometers and it is doped with Boron at a concentration of 87054017625275334656 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.8)\n(define Lgl 0.91)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t813335440558921089024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t767834596572539650048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t607816006460881764352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t87054017625275334656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.02 micrometers and it is doped with Boron at a concentration of 547575685359259353088 cm^-3. The short gate region is of the material Germanium with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 564325057151209177088 cm^-3. The long gate region is of the material Diamond with a length of 0.21 micrometers and it is doped with Boron at a concentration of 516017941849379831808 cm^-3. The drain region is of the material SiGe with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 596692503499614060544 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.28)\n(define Lgl 0.21)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.02)\n(define Ld 0.02)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t547575685359259353088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t564325057151209177088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t516017941849379831808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t596692503499614060544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 57896460298716577792 cm^-3. The short gate region is of the material Germanium with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 802818787538971918336 cm^-3. The long gate region is of the material Silicon with a length of 0.62 micrometers and it is doped with Boron at a concentration of 918776401116959342592 cm^-3. The drain region is of the material Germanium with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 578176525242183057408 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.31)\n(define Lgl 0.62)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.12)\n(define Ld 0.12)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t57896460298716577792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t802818787538971918336\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t918776401116959342592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t578176525242183057408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 218969126992593649664 cm^-3. The short gate region is of the material Diamond with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 705679207143485472768 cm^-3. The long gate region is of the material Silicon with a length of 0.77 micrometers and it is doped with Boron at a concentration of 940671874148343611392 cm^-3. The drain region is of the material SiGe with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 149929051997971709952 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.25)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.63)\n(define Ld 0.63)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t218969126992593649664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t705679207143485472768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t940671874148343611392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t149929051997971709952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 829512199508361609216 cm^-3. The short gate region is of the material Germanium with a length of 0.65 micrometers and it is doped with Phosphorus at a concentration of 294290686627032170496 cm^-3. The long gate region is of the material Germanium with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 271475796784747020288 cm^-3. The drain region is of the material Diamond with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 233254222563793502208 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.65)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.05)\n(define Ld 0.05)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t829512199508361609216\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t294290686627032170496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t271475796784747020288\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t233254222563793502208\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 54142554408722243584 cm^-3. The short gate region is of the material GaN with a length of 0.75 micrometers and it is doped with Boron at a concentration of 546177388220158312448 cm^-3. The long gate region is of the material Silicon with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 111762478429866295296 cm^-3. The drain region is of the material GaN with a length of 0.09 micrometers and it is doped with Boron at a concentration of 727326419471588524032 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.75)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.09)\n(define Ld 0.09)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t54142554408722243584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t546177388220158312448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t111762478429866295296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t727326419471588524032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.3 micrometers and it is doped with Boron at a concentration of 152539240992251052032 cm^-3. The short gate region is of the material Germanium with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 505148179713465122816 cm^-3. The long gate region is of the material Diamond with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 84783040080811147264 cm^-3. The drain region is of the material GaN with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 282064909909499281408 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.47)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t152539240992251052032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t505148179713465122816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t84783040080811147264\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t282064909909499281408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 283444415302933479424 cm^-3. The short gate region is of the material Silicon with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 930837865764028416000 cm^-3. The long gate region is of the material GaN with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 839313859131753103360 cm^-3. The drain region is of the material Silicon with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 6763920218240779264 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.56)\n(define Lgl 0.13)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t283444415302933479424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t930837865764028416000\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t839313859131753103360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t6763920218240779264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 266899562698660741120 cm^-3. The short gate region is of the material GaN with a length of 0.3 micrometers and it is doped with Boron at a concentration of 446867638819976118272 cm^-3. The long gate region is of the material Silicon with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 826412831844837228544 cm^-3. The drain region is of the material GaN with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 824576914505500852224 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.3)\n(define Lgl 0.5)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t266899562698660741120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t446867638819976118272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t826412831844837228544\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t824576914505500852224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 792016583754699374592 cm^-3. The short gate region is of the material SiGe with a length of 0.11 micrometers and it is doped with Boron at a concentration of 571981756373251522560 cm^-3. The long gate region is of the material Silicon with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 376520001994868129792 cm^-3. The drain region is of the material Germanium with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 892879702768470982656 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.11)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t792016583754699374592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t571981756373251522560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t376520001994868129792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t892879702768470982656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.05 micrometers and it is doped with Boron at a concentration of 803587591197769990144 cm^-3. The short gate region is of the material Diamond with a length of 0.53 micrometers and it is doped with Boron at a concentration of 923660736876934201344 cm^-3. The long gate region is of the material Silicon with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 626208272441852297216 cm^-3. The drain region is of the material Diamond with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 65118116192976480 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.53)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.05)\n(define Ld 0.05)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t803587591197769990144\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t923660736876934201344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t626208272441852297216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t65118116192976480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.98 micrometers and it is doped with Arsenic at a concentration of 455008240381546594304 cm^-3. The short gate region is of the material Diamond with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 911742976688445325312 cm^-3. The long gate region is of the material Silicon with a length of 0.95 micrometers and it is doped with Boron at a concentration of 392914555439506259968 cm^-3. The drain region is of the material Germanium with a length of 0.98 micrometers and it is doped with Phosphorus at a concentration of 450897923116739854336 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.8)\n(define Lgl 0.95)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.98)\n(define Ld 0.98)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t455008240381546594304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t911742976688445325312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t392914555439506259968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t450897923116739854336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 198791925997035192320 cm^-3. The short gate region is of the material SiGe with a length of 0.58 micrometers and it is doped with Boron at a concentration of 54619053415033126912 cm^-3. The long gate region is of the material Diamond with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 922741685021907353600 cm^-3. The drain region is of the material GaN with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 747635186004759281664 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.58)\n(define Lgl 0.95)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t198791925997035192320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t54619053415033126912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t922741685021907353600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t747635186004759281664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 368611495868222275584 cm^-3. The short gate region is of the material SiGe with a length of 0.64 micrometers and it is doped with Boron at a concentration of 72104257083111284736 cm^-3. The long gate region is of the material GaN with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 657793129610398662656 cm^-3. The drain region is of the material GaN with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 107562768230021234688 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.64)\n(define Lgl 0.22)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.34)\n(define Ld 0.34)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t368611495868222275584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t72104257083111284736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t657793129610398662656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t107562768230021234688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 958238658245920030720 cm^-3. The short gate region is of the material Germanium with a length of 0.59 micrometers and it is doped with Boron at a concentration of 513361300924819046400 cm^-3. The long gate region is of the material SiGe with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 230226720946866585600 cm^-3. The drain region is of the material Diamond with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 722076407486753669120 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.59)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t958238658245920030720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t513361300924819046400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t230226720946866585600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t722076407486753669120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 187145775882549592064 cm^-3. The short gate region is of the material GaN with a length of 0.77 micrometers and it is doped with Boron at a concentration of 412145777407247122432 cm^-3. The long gate region is of the material SiGe with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 318437651192251285504 cm^-3. The drain region is of the material SiGe with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 365432388595989741568 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.77)\n(define Lgl 0.9)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.22)\n(define Ld 0.22)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t187145775882549592064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t412145777407247122432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t318437651192251285504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t365432388595989741568\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 408869454888775712768 cm^-3. The short gate region is of the material GaN with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 690361093088110444544 cm^-3. The long gate region is of the material SiGe with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 743340732787358302208 cm^-3. The drain region is of the material Silicon with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 766200778340243472384 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.48)\n(define Lgl 0.19)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t408869454888775712768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t690361093088110444544\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t743340732787358302208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t766200778340243472384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 805897510011820179456 cm^-3. The short gate region is of the material GaN with a length of 0.62 micrometers and it is doped with Boron at a concentration of 539341458106696204288 cm^-3. The long gate region is of the material SiGe with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 40043576472475705344 cm^-3. The drain region is of the material Silicon with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 812051773734776471552 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.62)\n(define Lgl 0.32)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.09)\n(define Ld 0.09)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t805897510011820179456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t539341458106696204288\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t40043576472475705344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t812051773734776471552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 466095179566103658496 cm^-3. The short gate region is of the material SiGe with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 943624411350322905088 cm^-3. The long gate region is of the material Diamond with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 869745984862411948032 cm^-3. The drain region is of the material Diamond with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 912284880986729742336 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.52)\n(define Lgl 0.17)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.67)\n(define Ld 0.67)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t466095179566103658496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t943624411350322905088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t869745984862411948032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t912284880986729742336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.96 micrometers and it is doped with Boron at a concentration of 701346931198526750720 cm^-3. The short gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 996671205625572360192 cm^-3. The long gate region is of the material SiGe with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 519235020480372277248 cm^-3. The drain region is of the material Germanium with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 620175595087489400832 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.34)\n(define Lgl 0.67)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t701346931198526750720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t996671205625572360192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t519235020480372277248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t620175595087489400832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.78 micrometers and it is doped with Boron at a concentration of 411276414620990832640 cm^-3. The short gate region is of the material Diamond with a length of 0.3 micrometers and it is doped with Boron at a concentration of 844757490340682137600 cm^-3. The long gate region is of the material Diamond with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 334659746266258341888 cm^-3. The drain region is of the material Germanium with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 135025261586860048384 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.3)\n(define Lgl 0.33)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t411276414620990832640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t844757490340682137600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t334659746266258341888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t135025261586860048384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 776794858943809847296 cm^-3. The short gate region is of the material Silicon with a length of 0.42 micrometers and it is doped with Boron at a concentration of 346469587103790137344 cm^-3. The long gate region is of the material Diamond with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 956619303339754913792 cm^-3. The drain region is of the material SiGe with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 824294840760501534720 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.42)\n(define Lgl 0.32)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.64)\n(define Ld 0.64)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t776794858943809847296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t346469587103790137344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t956619303339754913792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t824294840760501534720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 450381338925492731904 cm^-3. The short gate region is of the material SiGe with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 323296285814757785600 cm^-3. The long gate region is of the material Germanium with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 603049190726627229696 cm^-3. The drain region is of the material GaN with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 686119352978836422656 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.67)\n(define Lgl 0.85)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t450381338925492731904\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t323296285814757785600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t603049190726627229696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t686119352978836422656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 345945704032789594112 cm^-3. The short gate region is of the material SiGe with a length of 0.51 micrometers and it is doped with Boron at a concentration of 204382429829238652928 cm^-3. The long gate region is of the material Germanium with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 16195277252086458368 cm^-3. The drain region is of the material GaN with a length of 0.39 micrometers and it is doped with Boron at a concentration of 712503202006656090112 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.51)\n(define Lgl 0.95)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.39)\n(define Ld 0.39)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t345945704032789594112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t204382429829238652928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t16195277252086458368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t712503202006656090112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 950434589072982802432 cm^-3. The short gate region is of the material Diamond with a length of 0.88 micrometers and it is doped with Boron at a concentration of 944606718786369748992 cm^-3. The long gate region is of the material GaN with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 349090285724051963904 cm^-3. The drain region is of the material Diamond with a length of 0.04 micrometers and it is doped with Boron at a concentration of 246771099414458236928 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.88)\n(define Lgl 0.75)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t950434589072982802432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t944606718786369748992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t349090285724051963904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t246771099414458236928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 855740349464268111872 cm^-3. The short gate region is of the material Diamond with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 221642640824362729472 cm^-3. The long gate region is of the material Germanium with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 285537872600171905024 cm^-3. The drain region is of the material Germanium with a length of 0.9 micrometers and it is doped with Boron at a concentration of 551738146923203919872 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.15)\n(define Lgl 0.66)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t855740349464268111872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t221642640824362729472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t285537872600171905024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t551738146923203919872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.38 micrometers and it is doped with Boron at a concentration of 224896538187772788736 cm^-3. The short gate region is of the material Diamond with a length of 0.21 micrometers and it is doped with Boron at a concentration of 217032045620720730112 cm^-3. The long gate region is of the material GaN with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 329288870671970336768 cm^-3. The drain region is of the material Diamond with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 200112247509475852288 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.21)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.38)\n(define Ld 0.38)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t224896538187772788736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t217032045620720730112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t329288870671970336768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t200112247509475852288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.02 micrometers and it is doped with Boron at a concentration of 43045828920903811072 cm^-3. The short gate region is of the material SiGe with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 276110870161284792320 cm^-3. The long gate region is of the material Germanium with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 994446367027765051392 cm^-3. The drain region is of the material SiGe with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 867675602792960753664 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.95)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.02)\n(define Ld 0.02)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t43045828920903811072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t276110870161284792320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t994446367027765051392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t867675602792960753664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 234037955096035131392 cm^-3. The short gate region is of the material SiGe with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 409377119932138389504 cm^-3. The long gate region is of the material Germanium with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 500670788362868621312 cm^-3. The drain region is of the material GaN with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 348371135974904692736 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.28)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t234037955096035131392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t409377119932138389504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t500670788362868621312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t348371135974904692736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 706556005847019421696 cm^-3. The short gate region is of the material SiGe with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 694213917511435026432 cm^-3. The long gate region is of the material Silicon with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 755148474623728680960 cm^-3. The drain region is of the material Germanium with a length of 0.69 micrometers and it is doped with Boron at a concentration of 996781278397881778176 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.34)\n(define Lgl 0.79)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.69)\n(define Ld 0.69)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t706556005847019421696\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t694213917511435026432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t755148474623728680960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t996781278397881778176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.91 micrometers and it is doped with Boron at a concentration of 297117386955009556480 cm^-3. The short gate region is of the material SiGe with a length of 0.45 micrometers and it is doped with Boron at a concentration of 874375320820145979392 cm^-3. The long gate region is of the material GaN with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 313495167819109761024 cm^-3. The drain region is of the material Germanium with a length of 0.91 micrometers and it is doped with Boron at a concentration of 336032464507153940480 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.45)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.91)\n(define Ld 0.91)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t297117386955009556480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t874375320820145979392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t313495167819109761024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t336032464507153940480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.77 micrometers and it is doped with Boron at a concentration of 528962371985997430784 cm^-3. The short gate region is of the material GaN with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 115272324122977026048 cm^-3. The long gate region is of the material Germanium with a length of 0.58 micrometers and it is doped with Boron at a concentration of 349747055514645299200 cm^-3. The drain region is of the material GaN with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 654677354979755294720 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.34)\n(define Lgl 0.58)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.77)\n(define Ld 0.77)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t528962371985997430784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t115272324122977026048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t349747055514645299200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t654677354979755294720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 768713525038472364032 cm^-3. The short gate region is of the material GaN with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 168904399103848906752 cm^-3. The long gate region is of the material Germanium with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 578715299216656302080 cm^-3. The drain region is of the material Diamond with a length of 0.96 micrometers and it is doped with Boron at a concentration of 150214796961722892288 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.1)\n(define Lgl 0.27)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t768713525038472364032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t168904399103848906752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t578715299216656302080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t150214796961722892288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.18 micrometers and it is doped with Arsenic at a concentration of 453420264018676023296 cm^-3. The short gate region is of the material Diamond with a length of 0.41 micrometers and it is doped with Boron at a concentration of 114940717022904320000 cm^-3. The long gate region is of the material SiGe with a length of 0.81 micrometers and it is doped with Boron at a concentration of 96699141274795819008 cm^-3. The drain region is of the material Diamond with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 903406734224967073792 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.41)\n(define Lgl 0.81)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.18)\n(define Ld 0.18)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t453420264018676023296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t114940717022904320000\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t96699141274795819008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t903406734224967073792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.65 micrometers and it is doped with Boron at a concentration of 547902049683536740352 cm^-3. The short gate region is of the material SiGe with a length of 0.98 micrometers and it is doped with Phosphorus at a concentration of 936700546330231570432 cm^-3. The long gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 324246704824732090368 cm^-3. The drain region is of the material Silicon with a length of 0.65 micrometers and it is doped with Arsenic at a concentration of 792110376975421669376 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.98)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.65)\n(define Ld 0.65)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t547902049683536740352\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t936700546330231570432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t324246704824732090368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t792110376975421669376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 607324591064968331264 cm^-3. The short gate region is of the material Silicon with a length of 0.33 micrometers and it is doped with Boron at a concentration of 632774577993665478656 cm^-3. The long gate region is of the material SiGe with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 370729166400976977920 cm^-3. The drain region is of the material GaN with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 991739595567043706880 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.33)\n(define Lgl 0.67)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.03)\n(define Ld 0.03)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t607324591064968331264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t632774577993665478656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t370729166400976977920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t991739595567043706880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 722519719035381088256 cm^-3. The short gate region is of the material GaN with a length of 0.07 micrometers and it is doped with Boron at a concentration of 380938459118474100736 cm^-3. The long gate region is of the material Diamond with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 790584739394783936512 cm^-3. The drain region is of the material Germanium with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 176198034199711645696 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.07)\n(define Lgl 0.19)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t722519719035381088256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t380938459118474100736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t790584739394783936512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t176198034199711645696\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.18 micrometers and it is doped with Arsenic at a concentration of 283214722248861351936 cm^-3. The short gate region is of the material Diamond with a length of 0.22 micrometers and it is doped with Boron at a concentration of 100743302471841333248 cm^-3. The long gate region is of the material SiGe with a length of 0.82 micrometers and it is doped with Boron at a concentration of 887933687146194403328 cm^-3. The drain region is of the material GaN with a length of 0.18 micrometers and it is doped with Arsenic at a concentration of 625508671940169826304 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.22)\n(define Lgl 0.82)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.18)\n(define Ld 0.18)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t283214722248861351936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t100743302471841333248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t887933687146194403328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t625508671940169826304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.83 micrometers and it is doped with Boron at a concentration of 494478969474800680960 cm^-3. The short gate region is of the material Diamond with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 809324078596574281728 cm^-3. The long gate region is of the material Diamond with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 280610418932188315648 cm^-3. The drain region is of the material GaN with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 805686701943173021696 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.62)\n(define Lgl 0.09)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.83)\n(define Ld 0.83)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t494478969474800680960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t809324078596574281728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t280610418932188315648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t805686701943173021696\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.46 micrometers and it is doped with Boron at a concentration of 525054926565125128192 cm^-3. The short gate region is of the material SiGe with a length of 0.13 micrometers and it is doped with Boron at a concentration of 285414446182591070208 cm^-3. The long gate region is of the material Diamond with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 336172550146542665728 cm^-3. The drain region is of the material SiGe with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 662989350737751310336 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.13)\n(define Lgl 0.53)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t525054926565125128192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t285414446182591070208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t336172550146542665728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t662989350737751310336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.42 micrometers and it is doped with Boron at a concentration of 823847185684673069056 cm^-3. The short gate region is of the material Germanium with a length of 0.85 micrometers and it is doped with Boron at a concentration of 928338855705709510656 cm^-3. The long gate region is of the material Silicon with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 408150831210816471040 cm^-3. The drain region is of the material Germanium with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 539240056530115887104 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.85)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.42)\n(define Ld 0.42)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t823847185684673069056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t928338855705709510656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t408150831210816471040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t539240056530115887104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.35 micrometers and it is doped with Boron at a concentration of 431022646938109870080 cm^-3. The short gate region is of the material GaN with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 647487806444573949952 cm^-3. The long gate region is of the material SiGe with a length of 0.01 micrometers and it is doped with Boron at a concentration of 622233130958730428416 cm^-3. The drain region is of the material Germanium with a length of 0.35 micrometers and it is doped with Boron at a concentration of 906358117703901773824 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.26)\n(define Lgl 0.01)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t431022646938109870080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t647487806444573949952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t622233130958730428416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t906358117703901773824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.78 micrometers and it is doped with Boron at a concentration of 207461544632521785344 cm^-3. The short gate region is of the material Silicon with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 595373207205396480000 cm^-3. The long gate region is of the material SiGe with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 9774566965676204032 cm^-3. The drain region is of the material SiGe with a length of 0.78 micrometers and it is doped with Boron at a concentration of 386721528936045740032 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.2)\n(define Lgl 0.51)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t207461544632521785344\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t595373207205396480000\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t9774566965676204032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t386721528936045740032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.75 micrometers and it is doped with Arsenic at a concentration of 112001684516662804480 cm^-3. The short gate region is of the material SiGe with a length of 1.0 micrometers and it is doped with Phosphorus at a concentration of 782238582062361346048 cm^-3. The long gate region is of the material Diamond with a length of 0.85 micrometers and it is doped with Boron at a concentration of 297999309026239578112 cm^-3. The drain region is of the material SiGe with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 658949826897093984256 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 1.0)\n(define Lgl 0.85)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.75)\n(define Ld 0.75)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t112001684516662804480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t782238582062361346048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t297999309026239578112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t658949826897093984256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 435805387447867539456 cm^-3. The short gate region is of the material GaN with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 42284749905088602112 cm^-3. The long gate region is of the material Diamond with a length of 0.54 micrometers and it is doped with Boron at a concentration of 694404899579655749632 cm^-3. The drain region is of the material Diamond with a length of 0.19 micrometers and it is doped with Boron at a concentration of 938074873908811792384 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.49)\n(define Lgl 0.54)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.19)\n(define Ld 0.19)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t435805387447867539456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t42284749905088602112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t694404899579655749632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t938074873908811792384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.97 micrometers and it is doped with Boron at a concentration of 378266640738243051520 cm^-3. The short gate region is of the material SiGe with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 570986597963558027264 cm^-3. The long gate region is of the material GaN with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 101357970788312104960 cm^-3. The drain region is of the material Diamond with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 736643778581877620736 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.81)\n(define Lgl 0.09)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.97)\n(define Ld 0.97)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t378266640738243051520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t570986597963558027264\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t101357970788312104960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t736643778581877620736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.6 micrometers and it is doped with Boron at a concentration of 216733093474254716928 cm^-3. The short gate region is of the material Germanium with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 385838899966729256960 cm^-3. The long gate region is of the material Diamond with a length of 0.16 micrometers and it is doped with Boron at a concentration of 271538296178426216448 cm^-3. The drain region is of the material SiGe with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 181935697447452409856 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.23)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.6)\n(define Ld 0.6)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t216733093474254716928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t385838899966729256960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t271538296178426216448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t181935697447452409856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.48 micrometers and it is doped with Boron at a concentration of 675181349601180254208 cm^-3. The short gate region is of the material Silicon with a length of 0.83 micrometers and it is doped with Boron at a concentration of 603437833454153629696 cm^-3. The long gate region is of the material GaN with a length of 0.25 micrometers and it is doped with Boron at a concentration of 910697363888803676160 cm^-3. The drain region is of the material SiGe with a length of 0.48 micrometers and it is doped with Boron at a concentration of 239058925832406433792 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.83)\n(define Lgl 0.25)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.48)\n(define Ld 0.48)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t675181349601180254208\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t603437833454153629696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t910697363888803676160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t239058925832406433792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 886494172303976562688 cm^-3. The short gate region is of the material GaN with a length of 0.06 micrometers and it is doped with Boron at a concentration of 321870424339185008640 cm^-3. The long gate region is of the material Diamond with a length of 0.94 micrometers and it is doped with Boron at a concentration of 611416486893010026496 cm^-3. The drain region is of the material SiGe with a length of 0.91 micrometers and it is doped with Boron at a concentration of 196564893186913632256 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.06)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.91)\n(define Ld 0.91)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t886494172303976562688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t321870424339185008640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t611416486893010026496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t196564893186913632256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 800717228584141324288 cm^-3. The short gate region is of the material Diamond with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 845689899981999702016 cm^-3. The long gate region is of the material Diamond with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 936592393727179358208 cm^-3. The drain region is of the material Diamond with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 546648334400409567232 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.92)\n(define Lgl 0.72)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t800717228584141324288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t845689899981999702016\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t936592393727179358208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t546648334400409567232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 804093528532380942336 cm^-3. The short gate region is of the material Diamond with a length of 0.38 micrometers and it is doped with Boron at a concentration of 919334476490680303616 cm^-3. The long gate region is of the material Diamond with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 196104390120514945024 cm^-3. The drain region is of the material GaN with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 568695760766439653376 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.38)\n(define Lgl 0.47)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.49)\n(define Ld 0.49)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t804093528532380942336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t919334476490680303616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t196104390120514945024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t568695760766439653376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 470517977851695595520 cm^-3. The short gate region is of the material Silicon with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 262566566650138165248 cm^-3. The long gate region is of the material GaN with a length of 0.39 micrometers and it is doped with Boron at a concentration of 369597075099756658688 cm^-3. The drain region is of the material SiGe with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 379011207659522097152 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.32)\n(define Lgl 0.39)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.19)\n(define Ld 0.19)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t470517977851695595520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t262566566650138165248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t369597075099756658688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t379011207659522097152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 123627486229376090112 cm^-3. The short gate region is of the material Germanium with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 57203988646150930432 cm^-3. The long gate region is of the material Germanium with a length of 0.65 micrometers and it is doped with Arsenic at a concentration of 564698956914990383104 cm^-3. The drain region is of the material SiGe with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 139780632814553907200 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.48)\n(define Lgl 0.65)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t123627486229376090112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t57203988646150930432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t564698956914990383104\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t139780632814553907200\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 982398856523665375232 cm^-3. The short gate region is of the material GaN with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 699653669302422208512 cm^-3. The long gate region is of the material GaN with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 265005769853570416640 cm^-3. The drain region is of the material SiGe with a length of 0.64 micrometers and it is doped with Boron at a concentration of 343045865159596834816 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.77)\n(define Lgl 0.23)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.64)\n(define Ld 0.64)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t982398856523665375232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t699653669302422208512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t265005769853570416640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t343045865159596834816\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.04 micrometers and it is doped with Boron at a concentration of 748671395566371733504 cm^-3. The short gate region is of the material Germanium with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 210381753853040656384 cm^-3. The long gate region is of the material SiGe with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 806312639717217927168 cm^-3. The drain region is of the material SiGe with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 836535064099987521536 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.69)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t748671395566371733504\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t210381753853040656384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t806312639717217927168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t836535064099987521536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 527432420098388000768 cm^-3. The short gate region is of the material Silicon with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 719413352536762351616 cm^-3. The long gate region is of the material Germanium with a length of 0.96 micrometers and it is doped with Boron at a concentration of 67606991068515024896 cm^-3. The drain region is of the material Germanium with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 132641475478077161472 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.69)\n(define Lgl 0.96)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.08)\n(define Ld 0.08)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t527432420098388000768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t719413352536762351616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t67606991068515024896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t132641475478077161472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 908838074722941403136 cm^-3. The short gate region is of the material Silicon with a length of 0.79 micrometers and it is doped with Boron at a concentration of 144536244727096852480 cm^-3. The long gate region is of the material Silicon with a length of 0.63 micrometers and it is doped with Boron at a concentration of 758158841642310696960 cm^-3. The drain region is of the material SiGe with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 435277694979238395904 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.79)\n(define Lgl 0.63)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.41)\n(define Ld 0.41)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t908838074722941403136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t144536244727096852480\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t758158841642310696960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t435277694979238395904\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 519597313783542185984 cm^-3. The short gate region is of the material SiGe with a length of 0.95 micrometers and it is doped with Boron at a concentration of 779343499416820383744 cm^-3. The long gate region is of the material Diamond with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 879398232945459724288 cm^-3. The drain region is of the material Germanium with a length of 0.21 micrometers and it is doped with Boron at a concentration of 148641760599249813504 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.95)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t519597313783542185984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t779343499416820383744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t879398232945459724288\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t148641760599249813504\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 551439328170336583680 cm^-3. The short gate region is of the material Silicon with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 971130794148848205824 cm^-3. The long gate region is of the material SiGe with a length of 0.68 micrometers and it is doped with Boron at a concentration of 267656831539095994368 cm^-3. The drain region is of the material Germanium with a length of 0.11 micrometers and it is doped with Boron at a concentration of 924512004390876348416 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.94)\n(define Lgl 0.68)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.11)\n(define Ld 0.11)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t551439328170336583680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t971130794148848205824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t267656831539095994368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t924512004390876348416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.71 micrometers and it is doped with Boron at a concentration of 571139477817101647872 cm^-3. The short gate region is of the material Diamond with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 357670905245649076224 cm^-3. The long gate region is of the material Silicon with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 218407747572296253440 cm^-3. The drain region is of the material Silicon with a length of 0.71 micrometers and it is doped with Boron at a concentration of 728293507531255578624 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.08)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.71)\n(define Ld 0.71)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t571139477817101647872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t357670905245649076224\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t218407747572296253440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t728293507531255578624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 412359706323907903488 cm^-3. The short gate region is of the material Germanium with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 823604027889255448576 cm^-3. The long gate region is of the material SiGe with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 984100354154794450944 cm^-3. The drain region is of the material Silicon with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 138321679753677078528 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.8)\n(define Lgl 0.61)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.49)\n(define Ld 0.49)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t412359706323907903488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t823604027889255448576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t984100354154794450944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t138321679753677078528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 11832221553070755840 cm^-3. The short gate region is of the material Germanium with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 913140589907239501824 cm^-3. The long gate region is of the material SiGe with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 19145295759746195456 cm^-3. The drain region is of the material Diamond with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 218149296811906236416 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.77)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t11832221553070755840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t913140589907239501824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t19145295759746195456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t218149296811906236416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 37022097719931871232 cm^-3. The short gate region is of the material SiGe with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 966630164069329272832 cm^-3. The long gate region is of the material GaN with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 543436274282041573376 cm^-3. The drain region is of the material Silicon with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 907543502120135688192 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.37)\n(define Lgl 0.34)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.82)\n(define Ld 0.82)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t37022097719931871232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t966630164069329272832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t543436274282041573376\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t907543502120135688192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.33 micrometers and it is doped with Boron at a concentration of 880857264302392737792 cm^-3. The short gate region is of the material GaN with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 592859481468458631168 cm^-3. The long gate region is of the material Silicon with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 66944524159057149952 cm^-3. The drain region is of the material GaN with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 131456395670208364544 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.77)\n(define Lgl 0.03)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t880857264302392737792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t592859481468458631168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t66944524159057149952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t131456395670208364544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 553625630981637406720 cm^-3. The short gate region is of the material Diamond with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 569752792785349509120 cm^-3. The long gate region is of the material Diamond with a length of 0.62 micrometers and it is doped with Boron at a concentration of 800380274474952687616 cm^-3. The drain region is of the material Diamond with a length of 0.26 micrometers and it is doped with Boron at a concentration of 322096283700866580480 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.78)\n(define Lgl 0.62)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.26)\n(define Ld 0.26)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t553625630981637406720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t569752792785349509120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t800380274474952687616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t322096283700866580480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.21 micrometers and it is doped with Boron at a concentration of 40702695016256684032 cm^-3. The short gate region is of the material GaN with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 387415404131016114176 cm^-3. The long gate region is of the material Silicon with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 239490797101107412992 cm^-3. The drain region is of the material Diamond with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 810250187145068412928 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.04)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t40702695016256684032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t387415404131016114176\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t239490797101107412992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t810250187145068412928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 557772499635349880832 cm^-3. The short gate region is of the material Silicon with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 987881456596367835136 cm^-3. The long gate region is of the material Silicon with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 609021824354706391040 cm^-3. The drain region is of the material Germanium with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 407226134915382902784 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.92)\n(define Lgl 0.79)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.48)\n(define Ld 0.48)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t557772499635349880832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t987881456596367835136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t609021824354706391040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t407226134915382902784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 427170170162648580096 cm^-3. The short gate region is of the material Diamond with a length of 0.04 micrometers and it is doped with Boron at a concentration of 389292605850375290880 cm^-3. The long gate region is of the material Silicon with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 558879168579772219392 cm^-3. The drain region is of the material Germanium with a length of 0.83 micrometers and it is doped with Boron at a concentration of 709148428186597195776 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.04)\n(define Lgl 0.52)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.83)\n(define Ld 0.83)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t427170170162648580096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t389292605850375290880\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t558879168579772219392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t709148428186597195776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.46 micrometers and it is doped with Boron at a concentration of 566565497660409774080 cm^-3. The short gate region is of the material Silicon with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 723063944522105225216 cm^-3. The long gate region is of the material Diamond with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 522413410766185431040 cm^-3. The drain region is of the material GaN with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 153674939431433371648 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.35)\n(define Lgl 0.08)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t566565497660409774080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t723063944522105225216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t522413410766185431040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t153674939431433371648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 952792919646810537984 cm^-3. The short gate region is of the material Diamond with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 214012862065490493440 cm^-3. The long gate region is of the material Silicon with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 502404505217931018240 cm^-3. The drain region is of the material GaN with a length of 0.61 micrometers and it is doped with Boron at a concentration of 471669353598989500416 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.93)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.61)\n(define Ld 0.61)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t952792919646810537984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t214012862065490493440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t502404505217931018240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t471669353598989500416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 371186850283549360128 cm^-3. The short gate region is of the material Silicon with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 548990471219230801920 cm^-3. The long gate region is of the material SiGe with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 796292256643833790464 cm^-3. The drain region is of the material Diamond with a length of 0.91 micrometers and it is doped with Boron at a concentration of 860524412468316209152 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.69)\n(define Lgl 0.32)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.91)\n(define Ld 0.91)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t371186850283549360128\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t548990471219230801920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t796292256643833790464\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t860524412468316209152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 459534197301991178240 cm^-3. The short gate region is of the material GaN with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 166609439060302004224 cm^-3. The long gate region is of the material GaN with a length of 0.99 micrometers and it is doped with Boron at a concentration of 959770660856188108800 cm^-3. The drain region is of the material GaN with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 242887632054880698368 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.68)\n(define Lgl 0.99)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.22)\n(define Ld 0.22)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t459534197301991178240\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t166609439060302004224\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t959770660856188108800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t242887632054880698368\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 145494805805757808640 cm^-3. The short gate region is of the material Diamond with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 155663103970770518016 cm^-3. The long gate region is of the material Germanium with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 288100921877477949440 cm^-3. The drain region is of the material Silicon with a length of 0.43 micrometers and it is doped with Boron at a concentration of 672103345462587162624 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.95)\n(define Lgl 0.06)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.43)\n(define Ld 0.43)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t145494805805757808640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t155663103970770518016\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t288100921877477949440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t672103345462587162624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 972978646286907867136 cm^-3. The short gate region is of the material GaN with a length of 0.56 micrometers and it is doped with Boron at a concentration of 456693781692001943552 cm^-3. The long gate region is of the material GaN with a length of 0.07 micrometers and it is doped with Boron at a concentration of 148206097359202025472 cm^-3. The drain region is of the material Diamond with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 59252854278101491712 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.56)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.25)\n(define Ld 0.25)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t972978646286907867136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t456693781692001943552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t148206097359202025472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t59252854278101491712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 905217427298909945856 cm^-3. The short gate region is of the material SiGe with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 255940369526079258624 cm^-3. The long gate region is of the material Diamond with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 256251711442859130880 cm^-3. The drain region is of the material GaN with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 711863972030594547712 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.58)\n(define Lgl 0.2)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.13)\n(define Ld 0.13)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t905217427298909945856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t255940369526079258624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t256251711442859130880\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t711863972030594547712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 622018976639971491840 cm^-3. The short gate region is of the material Silicon with a length of 0.72 micrometers and it is doped with Boron at a concentration of 430259861502062886912 cm^-3. The long gate region is of the material Silicon with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 498281690830525562880 cm^-3. The drain region is of the material Silicon with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 412778735986662047744 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.72)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.63)\n(define Ld 0.63)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t622018976639971491840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t430259861502062886912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t498281690830525562880\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t412778735986662047744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.67 micrometers and it is doped with Boron at a concentration of 580326077403464990720 cm^-3. The short gate region is of the material Silicon with a length of 0.65 micrometers and it is doped with Boron at a concentration of 89186718824395030528 cm^-3. The long gate region is of the material GaN with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 113166815489324892160 cm^-3. The drain region is of the material Germanium with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 93447613493414313984 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.65)\n(define Lgl 0.96)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.67)\n(define Ld 0.67)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t580326077403464990720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t89186718824395030528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t113166815489324892160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t93447613493414313984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.83 micrometers and it is doped with Boron at a concentration of 747835534371346579456 cm^-3. The short gate region is of the material GaN with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 867367994403713581056 cm^-3. The long gate region is of the material GaN with a length of 0.59 micrometers and it is doped with Boron at a concentration of 565389850048202014720 cm^-3. The drain region is of the material Silicon with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 584799384023430070272 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.25)\n(define Lgl 0.59)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.83)\n(define Ld 0.83)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t747835534371346579456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t867367994403713581056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t565389850048202014720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t584799384023430070272\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.89 micrometers and it is doped with Boron at a concentration of 344986558162464276480 cm^-3. The short gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 466272118989189283840 cm^-3. The long gate region is of the material SiGe with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 884838437896900837376 cm^-3. The drain region is of the material Diamond with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 554788210915681370112 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.34)\n(define Lgl 0.73)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.89)\n(define Ld 0.89)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t344986558162464276480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t466272118989189283840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t884838437896900837376\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t554788210915681370112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 372862202392518852608 cm^-3. The short gate region is of the material GaN with a length of 0.54 micrometers and it is doped with Boron at a concentration of 913138229443854467072 cm^-3. The long gate region is of the material Silicon with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 442793359814284148736 cm^-3. The drain region is of the material SiGe with a length of 0.58 micrometers and it is doped with Boron at a concentration of 710422914257832378368 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.54)\n(define Lgl 0.54)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t372862202392518852608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t913138229443854467072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t442793359814284148736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t710422914257832378368\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 331567107241578856448 cm^-3. The short gate region is of the material Silicon with a length of 0.54 micrometers and it is doped with Phosphorus at a concentration of 494552790486426189824 cm^-3. The long gate region is of the material Germanium with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 614387860655310241792 cm^-3. The drain region is of the material GaN with a length of 0.93 micrometers and it is doped with Boron at a concentration of 597591799173299961856 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.54)\n(define Lgl 0.5)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.93)\n(define Ld 0.93)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t331567107241578856448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t494552790486426189824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t614387860655310241792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t597591799173299961856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 625871535467688624128 cm^-3. The short gate region is of the material Germanium with a length of 0.75 micrometers and it is doped with Boron at a concentration of 501004306684588851200 cm^-3. The long gate region is of the material Silicon with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 351158638351244722176 cm^-3. The drain region is of the material SiGe with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 353274355909856591872 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.75)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.41)\n(define Ld 0.41)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t625871535467688624128\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t501004306684588851200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t351158638351244722176\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t353274355909856591872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 858715465885985931264 cm^-3. The short gate region is of the material SiGe with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 643808036271515762688 cm^-3. The long gate region is of the material SiGe with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 938924889410854191104 cm^-3. The drain region is of the material Diamond with a length of 0.97 micrometers and it is doped with Arsenic at a concentration of 284070664142048624640 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.46)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.97)\n(define Ld 0.97)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t858715465885985931264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t643808036271515762688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t938924889410854191104\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t284070664142048624640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 990004384453325881344 cm^-3. The short gate region is of the material Germanium with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 406413350250128736256 cm^-3. The long gate region is of the material SiGe with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 827721427622130745344 cm^-3. The drain region is of the material GaN with a length of 0.78 micrometers and it is doped with Boron at a concentration of 234752565837204226048 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.28)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t990004384453325881344\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t406413350250128736256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t827721427622130745344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t234752565837204226048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 482964702483413598208 cm^-3. The short gate region is of the material Silicon with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 356989266322542428160 cm^-3. The long gate region is of the material Silicon with a length of 0.11 micrometers and it is doped with Boron at a concentration of 317497353425210179584 cm^-3. The drain region is of the material SiGe with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 541081472709948997632 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.96)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.55)\n(define Ld 0.55)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t482964702483413598208\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t356989266322542428160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t317497353425210179584\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t541081472709948997632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 747891636772914462720 cm^-3. The short gate region is of the material Germanium with a length of 0.06 micrometers and it is doped with Boron at a concentration of 221819988319857901568 cm^-3. The long gate region is of the material SiGe with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 747683908976477208576 cm^-3. The drain region is of the material Silicon with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 484044928195929047040 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.06)\n(define Lgl 0.39)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.06)\n(define Ld 0.06)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t747891636772914462720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t221819988319857901568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t747683908976477208576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t484044928195929047040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 356942313260839075840 cm^-3. The short gate region is of the material Silicon with a length of 0.84 micrometers and it is doped with Boron at a concentration of 457441910693419155456 cm^-3. The long gate region is of the material SiGe with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 424669632758355984384 cm^-3. The drain region is of the material Silicon with a length of 0.64 micrometers and it is doped with Boron at a concentration of 557993035226198573056 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.84)\n(define Lgl 0.28)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.64)\n(define Ld 0.64)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t356942313260839075840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t457441910693419155456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t424669632758355984384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t557993035226198573056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.98 micrometers and it is doped with Phosphorus at a concentration of 977652283121433182208 cm^-3. The short gate region is of the material SiGe with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 21367677131306713088 cm^-3. The long gate region is of the material Germanium with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 121390213347620061184 cm^-3. The drain region is of the material Germanium with a length of 0.98 micrometers and it is doped with Arsenic at a concentration of 672701069454816444416 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.46)\n(define Lgl 0.04)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.98)\n(define Ld 0.98)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t977652283121433182208\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t21367677131306713088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t121390213347620061184\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t672701069454816444416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 669506401306236944384 cm^-3. The short gate region is of the material Germanium with a length of 0.9 micrometers and it is doped with Boron at a concentration of 317306777773667516416 cm^-3. The long gate region is of the material GaN with a length of 0.66 micrometers and it is doped with Boron at a concentration of 823010666327382294528 cm^-3. The drain region is of the material Silicon with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 237012307600787603456 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.9)\n(define Lgl 0.66)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.89)\n(define Ld 0.89)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t669506401306236944384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t317306777773667516416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t823010666327382294528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t237012307600787603456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.2 micrometers and it is doped with Boron at a concentration of 303945182467519676416 cm^-3. The short gate region is of the material Silicon with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 739576240285862461440 cm^-3. The long gate region is of the material Silicon with a length of 0.44 micrometers and it is doped with Boron at a concentration of 246995505734272778240 cm^-3. The drain region is of the material Diamond with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 266245074281912270848 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.91)\n(define Lgl 0.44)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t303945182467519676416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t739576240285862461440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t246995505734272778240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t266245074281912270848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 235083854643677003776 cm^-3. The short gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 347623443520178094080 cm^-3. The long gate region is of the material Diamond with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 526797792508436676608 cm^-3. The drain region is of the material Silicon with a length of 0.22 micrometers and it is doped with Boron at a concentration of 135501057766183813120 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.55)\n(define Lgl 0.61)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.22)\n(define Ld 0.22)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t235083854643677003776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t347623443520178094080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t526797792508436676608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t135501057766183813120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 468026587901123887104 cm^-3. The short gate region is of the material GaN with a length of 0.01 micrometers and it is doped with Boron at a concentration of 580829747673349750784 cm^-3. The long gate region is of the material Diamond with a length of 0.69 micrometers and it is doped with Boron at a concentration of 995937624580122869760 cm^-3. The drain region is of the material SiGe with a length of 0.38 micrometers and it is doped with Boron at a concentration of 141402540644743626752 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.01)\n(define Lgl 0.69)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.38)\n(define Ld 0.38)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t468026587901123887104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t580829747673349750784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t995937624580122869760\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t141402540644743626752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 103145063421277224960 cm^-3. The short gate region is of the material SiGe with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 721010084161734311936 cm^-3. The long gate region is of the material SiGe with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 972142987146420682752 cm^-3. The drain region is of the material GaN with a length of 0.43 micrometers and it is doped with Boron at a concentration of 511760311132967534592 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.53)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.43)\n(define Ld 0.43)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t103145063421277224960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t721010084161734311936\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t972142987146420682752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t511760311132967534592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.92 micrometers and it is doped with Boron at a concentration of 931481047219252887552 cm^-3. The short gate region is of the material GaN with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 754505745366690168832 cm^-3. The long gate region is of the material SiGe with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 607849040643609722880 cm^-3. The drain region is of the material SiGe with a length of 0.92 micrometers and it is doped with Boron at a concentration of 880561052748701106176 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.19)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.92)\n(define Ld 0.92)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t931481047219252887552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t754505745366690168832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t607849040643609722880\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t880561052748701106176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 13515631171218368512 cm^-3. The short gate region is of the material SiGe with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 417986226896109043712 cm^-3. The long gate region is of the material Silicon with a length of 0.5 micrometers and it is doped with Boron at a concentration of 386206133122532638720 cm^-3. The drain region is of the material Germanium with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 237062357505286701056 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.91)\n(define Lgl 0.5)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.93)\n(define Ld 0.93)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t13515631171218368512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t417986226896109043712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t386206133122532638720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t237062357505286701056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 138694171306310828032 cm^-3. The short gate region is of the material Silicon with a length of 0.38 micrometers and it is doped with Boron at a concentration of 995937982027959894016 cm^-3. The long gate region is of the material Silicon with a length of 0.54 micrometers and it is doped with Boron at a concentration of 879902941272635211776 cm^-3. The drain region is of the material Germanium with a length of 0.43 micrometers and it is doped with Boron at a concentration of 572151725735264256000 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.38)\n(define Lgl 0.54)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.43)\n(define Ld 0.43)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t138694171306310828032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t995937982027959894016\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t879902941272635211776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t572151725735264256000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.48 micrometers and it is doped with Boron at a concentration of 460416845021247963136 cm^-3. The short gate region is of the material Silicon with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 443261668751188295680 cm^-3. The long gate region is of the material GaN with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 203462424367435153408 cm^-3. The drain region is of the material Diamond with a length of 0.48 micrometers and it is doped with Boron at a concentration of 851300616180781678592 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.16)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.48)\n(define Ld 0.48)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t460416845021247963136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t443261668751188295680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t203462424367435153408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t851300616180781678592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 638543404290054160384 cm^-3. The short gate region is of the material GaN with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 929410110192821207040 cm^-3. The long gate region is of the material Germanium with a length of 0.52 micrometers and it is doped with Boron at a concentration of 525717771978078814208 cm^-3. The drain region is of the material SiGe with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 803556970771992543232 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.96)\n(define Lgl 0.52)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.01)\n(define Ld 0.01)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t638543404290054160384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t929410110192821207040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t525717771978078814208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t803556970771992543232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 324165247001175130112 cm^-3. The short gate region is of the material Germanium with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 697535928673900822528 cm^-3. The long gate region is of the material SiGe with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 385979108571462500352 cm^-3. The drain region is of the material SiGe with a length of 0.39 micrometers and it is doped with Boron at a concentration of 369130279004620849152 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.94)\n(define Lgl 0.23)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.39)\n(define Ld 0.39)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t324165247001175130112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t697535928673900822528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t385979108571462500352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t369130279004620849152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.16 micrometers and it is doped with Boron at a concentration of 443976597741871562752 cm^-3. The short gate region is of the material GaN with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 878394830389766914048 cm^-3. The long gate region is of the material SiGe with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 225795849122134392832 cm^-3. The drain region is of the material GaN with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 493584659823941779456 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.89)\n(define Lgl 0.71)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.16)\n(define Ld 0.16)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t443976597741871562752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t878394830389766914048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t225795849122134392832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t493584659823941779456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.97 micrometers and it is doped with Boron at a concentration of 109677377803869716480 cm^-3. The short gate region is of the material Germanium with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 39520923006759329792 cm^-3. The long gate region is of the material Silicon with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 811631103594356801536 cm^-3. The drain region is of the material GaN with a length of 0.97 micrometers and it is doped with Boron at a concentration of 620772018485879242752 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.88)\n(define Lgl 0.48)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.97)\n(define Ld 0.97)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t109677377803869716480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t39520923006759329792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t811631103594356801536\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t620772018485879242752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.54 micrometers and it is doped with Phosphorus at a concentration of 647762370213599903744 cm^-3. The short gate region is of the material GaN with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 210049268602551861248 cm^-3. The long gate region is of the material GaN with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 997868327531745378304 cm^-3. The drain region is of the material Germanium with a length of 0.54 micrometers and it is doped with Phosphorus at a concentration of 515788271611624816640 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.29)\n(define Lgl 0.99)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.54)\n(define Ld 0.54)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t647762370213599903744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t210049268602551861248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t997868327531745378304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t515788271611624816640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 388400646960918167552 cm^-3. The short gate region is of the material Germanium with a length of 0.77 micrometers and it is doped with Boron at a concentration of 586843284433017503744 cm^-3. The long gate region is of the material GaN with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 371174793529914294272 cm^-3. The drain region is of the material Germanium with a length of 0.59 micrometers and it is doped with Boron at a concentration of 992066027859573080064 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.77)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t388400646960918167552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t586843284433017503744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t371174793529914294272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t992066027859573080064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 359731596512533413888 cm^-3. The short gate region is of the material SiGe with a length of 0.12 micrometers and it is doped with Boron at a concentration of 110147749110946725888 cm^-3. The long gate region is of the material SiGe with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 531182789375554748416 cm^-3. The drain region is of the material SiGe with a length of 0.9 micrometers and it is doped with Boron at a concentration of 758942291393293058048 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.12)\n(define Lgl 0.08)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t359731596512533413888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t110147749110946725888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t531182789375554748416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t758942291393293058048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 684726940111698001920 cm^-3. The short gate region is of the material Diamond with a length of 0.12 micrometers and it is doped with Boron at a concentration of 238338519833064308736 cm^-3. The long gate region is of the material Diamond with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 168025484283029422080 cm^-3. The drain region is of the material GaN with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 748770563364475109376 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.12)\n(define Lgl 0.29)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.44)\n(define Ld 0.44)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t684726940111698001920\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t238338519833064308736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t168025484283029422080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t748770563364475109376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 866872766215837581312 cm^-3. The short gate region is of the material Silicon with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 293441923290693992448 cm^-3. The long gate region is of the material SiGe with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 840158732043666849792 cm^-3. The drain region is of the material SiGe with a length of 0.18 micrometers and it is doped with Arsenic at a concentration of 838170880588563480576 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.89)\n(define Lgl 0.58)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.18)\n(define Ld 0.18)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t866872766215837581312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t293441923290693992448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t840158732043666849792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t838170880588563480576\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 432161487762812698624 cm^-3. The short gate region is of the material GaN with a length of 0.23 micrometers and it is doped with Boron at a concentration of 157732360190741676032 cm^-3. The long gate region is of the material Diamond with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 18146117653636395008 cm^-3. The drain region is of the material Germanium with a length of 0.31 micrometers and it is doped with Boron at a concentration of 129084684131045408768 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.23)\n(define Lgl 0.66)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.31)\n(define Ld 0.31)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t432161487762812698624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t157732360190741676032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t18146117653636395008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t129084684131045408768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 708922736150328246272 cm^-3. The short gate region is of the material Silicon with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 775660169727784648704 cm^-3. The long gate region is of the material SiGe with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 212474181494646243328 cm^-3. The drain region is of the material Germanium with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 17725265298221594624 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.62)\n(define Lgl 0.46)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t708922736150328246272\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t775660169727784648704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t212474181494646243328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t17725265298221594624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 234212967281783537664 cm^-3. The short gate region is of the material Silicon with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 727591454235284078592 cm^-3. The long gate region is of the material Silicon with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 444692793510194053120 cm^-3. The drain region is of the material Silicon with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 848403979311447670784 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.41)\n(define Lgl 0.73)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.68)\n(define Ld 0.68)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t234212967281783537664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t727591454235284078592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t444692793510194053120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t848403979311447670784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 180048945327342059520 cm^-3. The short gate region is of the material Silicon with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 848672377307500642304 cm^-3. The long gate region is of the material Diamond with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 801139115623438352384 cm^-3. The drain region is of the material SiGe with a length of 0.52 micrometers and it is doped with Boron at a concentration of 66870966183435116544 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.36)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.52)\n(define Ld 0.52)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t180048945327342059520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t848672377307500642304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t801139115623438352384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t66870966183435116544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.08 micrometers and it is doped with Boron at a concentration of 312832632400316071936 cm^-3. The short gate region is of the material Diamond with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 781637109007299772416 cm^-3. The long gate region is of the material Silicon with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 138746097582544142336 cm^-3. The drain region is of the material Silicon with a length of 0.08 micrometers and it is doped with Boron at a concentration of 670133979484616261632 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.2)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.08)\n(define Ld 0.08)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t312832632400316071936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t781637109007299772416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t138746097582544142336\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t670133979484616261632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 332367107080231583744 cm^-3. The short gate region is of the material SiGe with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 135365641214185373696 cm^-3. The long gate region is of the material GaN with a length of 0.1 micrometers and it is doped with Boron at a concentration of 402320987889315741696 cm^-3. The drain region is of the material Germanium with a length of 0.17 micrometers and it is doped with Boron at a concentration of 384314080233715662848 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.99)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.17)\n(define Ld 0.17)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t332367107080231583744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t135365641214185373696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t402320987889315741696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t384314080233715662848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 21167654530391175168 cm^-3. The short gate region is of the material GaN with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 461837713887828246528 cm^-3. The long gate region is of the material GaN with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 209609062895217836032 cm^-3. The drain region is of the material GaN with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 346769611482363330560 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.86)\n(define Lgl 0.37)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t21167654530391175168\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t461837713887828246528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t209609062895217836032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t346769611482363330560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.36 micrometers and it is doped with Boron at a concentration of 155617230000252977152 cm^-3. The short gate region is of the material Diamond with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 723318748658999754752 cm^-3. The long gate region is of the material Diamond with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 955614148469798338560 cm^-3. The drain region is of the material Diamond with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 669361224040778563584 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.34)\n(define Lgl 0.08)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.36)\n(define Ld 0.36)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t155617230000252977152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t723318748658999754752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t955614148469798338560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t669361224040778563584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 70955666797532487680 cm^-3. The short gate region is of the material Diamond with a length of 0.12 micrometers and it is doped with Arsenic at a concentration of 328904842192173924352 cm^-3. The long gate region is of the material Germanium with a length of 0.66 micrometers and it is doped with Boron at a concentration of 324756104288753549312 cm^-3. The drain region is of the material Silicon with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 38075435812007886848 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.12)\n(define Lgl 0.66)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t70955666797532487680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t328904842192173924352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t324756104288753549312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t38075435812007886848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 48842453175615438848 cm^-3. The short gate region is of the material Germanium with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 984114224895136366592 cm^-3. The long gate region is of the material SiGe with a length of 0.78 micrometers and it is doped with Boron at a concentration of 900815913013301346304 cm^-3. The drain region is of the material GaN with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 555990573749830680576 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.44)\n(define Lgl 0.78)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t48842453175615438848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t984114224895136366592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t900815913013301346304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t555990573749830680576\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 344900305724904833024 cm^-3. The short gate region is of the material SiGe with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 650410094535333249024 cm^-3. The long gate region is of the material Diamond with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 802313089181548412928 cm^-3. The drain region is of the material SiGe with a length of 0.33 micrometers and it is doped with Boron at a concentration of 351585937766709329920 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.51)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t344900305724904833024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t650410094535333249024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t802313089181548412928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t351585937766709329920\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 662183353265461002240 cm^-3. The short gate region is of the material Silicon with a length of 0.14 micrometers and it is doped with Boron at a concentration of 886936495317027782656 cm^-3. The long gate region is of the material Silicon with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 306108706816537657344 cm^-3. The drain region is of the material SiGe with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 605363569278037655552 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.14)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.88)\n(define Ld 0.88)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t662183353265461002240\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t886936495317027782656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t306108706816537657344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t605363569278037655552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.96 micrometers and it is doped with Boron at a concentration of 199742677945391677440 cm^-3. The short gate region is of the material GaN with a length of 0.97 micrometers and it is doped with Boron at a concentration of 260888714760016855040 cm^-3. The long gate region is of the material Germanium with a length of 0.77 micrometers and it is doped with Boron at a concentration of 47854865746001485824 cm^-3. The drain region is of the material GaN with a length of 0.96 micrometers and it is doped with Boron at a concentration of 349276183118821326848 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.97)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t199742677945391677440\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t260888714760016855040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t47854865746001485824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t349276183118821326848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.55 micrometers and it is doped with Boron at a concentration of 444921270680824184832 cm^-3. The short gate region is of the material Silicon with a length of 0.04 micrometers and it is doped with Boron at a concentration of 770623222230948511744 cm^-3. The long gate region is of the material GaN with a length of 0.42 micrometers and it is doped with Boron at a concentration of 315535818551991468032 cm^-3. The drain region is of the material Germanium with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 960547209011444056064 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.04)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.55)\n(define Ld 0.55)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t444921270680824184832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t770623222230948511744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t315535818551991468032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t960547209011444056064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 910685240162848473088 cm^-3. The short gate region is of the material Diamond with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 254926554866580881408 cm^-3. The long gate region is of the material Germanium with a length of 0.68 micrometers and it is doped with Boron at a concentration of 244725673131168661504 cm^-3. The drain region is of the material Silicon with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 810579907415411130368 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.33)\n(define Lgl 0.68)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.77)\n(define Ld 0.77)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t910685240162848473088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t254926554866580881408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t244725673131168661504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t810579907415411130368\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.24 micrometers and it is doped with Boron at a concentration of 870322314880471793664 cm^-3. The short gate region is of the material SiGe with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 189948491334281756672 cm^-3. The long gate region is of the material Germanium with a length of 0.46 micrometers and it is doped with Boron at a concentration of 106495206485020999680 cm^-3. The drain region is of the material Diamond with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 76783481407165267968 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.05)\n(define Lgl 0.46)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.24)\n(define Ld 0.24)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t870322314880471793664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t189948491334281756672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t106495206485020999680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t76783481407165267968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 601541847805948329984 cm^-3. The short gate region is of the material Silicon with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 222338702977604780032 cm^-3. The long gate region is of the material GaN with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 280209946587287814144 cm^-3. The drain region is of the material Diamond with a length of 0.72 micrometers and it is doped with Arsenic at a concentration of 307690677742387593216 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.9)\n(define Lgl 0.27)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.72)\n(define Ld 0.72)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t601541847805948329984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t222338702977604780032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t280209946587287814144\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t307690677742387593216\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 673500524135097958400 cm^-3. The short gate region is of the material Silicon with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 806574064648702656512 cm^-3. The long gate region is of the material Silicon with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 872687700916869267456 cm^-3. The drain region is of the material Diamond with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 195190239354993836032 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.02)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t673500524135097958400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t806574064648702656512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t872687700916869267456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t195190239354993836032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 270537061797312266240 cm^-3. The short gate region is of the material Germanium with a length of 0.4 micrometers and it is doped with Boron at a concentration of 978616254710400679936 cm^-3. The long gate region is of the material Germanium with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 575255187191278600192 cm^-3. The drain region is of the material GaN with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 480530879652013670400 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.4)\n(define Lgl 0.26)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.22)\n(define Ld 0.22)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t270537061797312266240\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t978616254710400679936\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t575255187191278600192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t480530879652013670400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.89 micrometers and it is doped with Boron at a concentration of 192504900871081558016 cm^-3. The short gate region is of the material Diamond with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 702764251243330011136 cm^-3. The long gate region is of the material GaN with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 423483505283278045184 cm^-3. The drain region is of the material GaN with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 994275771654274416640 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.8)\n(define Lgl 0.22)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.89)\n(define Ld 0.89)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t192504900871081558016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t702764251243330011136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t423483505283278045184\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t994275771654274416640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.63 micrometers and it is doped with Boron at a concentration of 685461001650508267520 cm^-3. The short gate region is of the material Germanium with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 771408460028616638464 cm^-3. The long gate region is of the material SiGe with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 728185624962851274752 cm^-3. The drain region is of the material Silicon with a length of 0.63 micrometers and it is doped with Boron at a concentration of 281364318285292142592 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.87)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.63)\n(define Ld 0.63)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t685461001650508267520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t771408460028616638464\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t728185624962851274752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t281364318285292142592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 979921469672544141312 cm^-3. The short gate region is of the material Germanium with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 317832658093271547904 cm^-3. The long gate region is of the material GaN with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 872557081596153692160 cm^-3. The drain region is of the material GaN with a length of 0.49 micrometers and it is doped with Boron at a concentration of 273243181641236381696 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.1)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.49)\n(define Ld 0.49)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t979921469672544141312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t317832658093271547904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t872557081596153692160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t273243181641236381696\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.27 micrometers and it is doped with Boron at a concentration of 272206780803252322304 cm^-3. The short gate region is of the material Germanium with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 64838252392637218816 cm^-3. The long gate region is of the material GaN with a length of 0.6 micrometers and it is doped with Boron at a concentration of 225526274907454636032 cm^-3. The drain region is of the material GaN with a length of 0.27 micrometers and it is doped with Boron at a concentration of 666122704168822243328 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.9)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.27)\n(define Ld 0.27)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t272206780803252322304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t64838252392637218816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t225526274907454636032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t666122704168822243328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.18 micrometers and it is doped with Boron at a concentration of 352824302793504325632 cm^-3. The short gate region is of the material GaN with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 941478180269822836736 cm^-3. The long gate region is of the material Silicon with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 160006910751368478720 cm^-3. The drain region is of the material SiGe with a length of 0.18 micrometers and it is doped with Boron at a concentration of 649128539680984006656 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.52)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.18)\n(define Ld 0.18)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t352824302793504325632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t941478180269822836736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t160006910751368478720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t649128539680984006656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 163088307455386583040 cm^-3. The short gate region is of the material SiGe with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 47352290613669273600 cm^-3. The long gate region is of the material GaN with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 723039533921508392960 cm^-3. The drain region is of the material SiGe with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 674371826597470666752 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.77)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t163088307455386583040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t47352290613669273600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t723039533921508392960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t674371826597470666752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 419187949564754395136 cm^-3. The short gate region is of the material SiGe with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 746956123465768763392 cm^-3. The long gate region is of the material GaN with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 533859677348824219648 cm^-3. The drain region is of the material Diamond with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 759446992901970198528 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.32)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.84)\n(define Ld 0.84)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t419187949564754395136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t746956123465768763392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t533859677348824219648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t759446992901970198528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 295061706182892453888 cm^-3. The short gate region is of the material SiGe with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 2188297614520062464 cm^-3. The long gate region is of the material GaN with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 895738920759917936640 cm^-3. The drain region is of the material Silicon with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 263406834860565790720 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.39)\n(define Lgl 0.89)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t295061706182892453888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t2188297614520062464\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t895738920759917936640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t263406834860565790720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.73 micrometers and it is doped with Boron at a concentration of 531776744630243033088 cm^-3. The short gate region is of the material SiGe with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 37209111512070553600 cm^-3. The long gate region is of the material Silicon with a length of 0.73 micrometers and it is doped with Boron at a concentration of 804469653497792692224 cm^-3. The drain region is of the material Diamond with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 25679323082867900416 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.78)\n(define Lgl 0.73)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.73)\n(define Ld 0.73)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t531776744630243033088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t37209111512070553600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t804469653497792692224\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t25679323082867900416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.36 micrometers and it is doped with Boron at a concentration of 303687581678946353152 cm^-3. The short gate region is of the material Diamond with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 411685065635207315456 cm^-3. The long gate region is of the material Silicon with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 953264148045321863168 cm^-3. The drain region is of the material SiGe with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 85488672984827920384 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.47)\n(define Lgl 0.75)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.36)\n(define Ld 0.36)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t303687581678946353152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t411685065635207315456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t953264148045321863168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t85488672984827920384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 906939953204491321344 cm^-3. The short gate region is of the material SiGe with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 555098663043292725248 cm^-3. The long gate region is of the material Germanium with a length of 0.49 micrometers and it is doped with Boron at a concentration of 966252355454602444800 cm^-3. The drain region is of the material GaN with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 163684384717035896832 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.81)\n(define Lgl 0.49)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.75)\n(define Ld 0.75)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t906939953204491321344\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t555098663043292725248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t966252355454602444800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t163684384717035896832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 138181924382726586368 cm^-3. The short gate region is of the material GaN with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 38126734603585404928 cm^-3. The long gate region is of the material Silicon with a length of 0.14 micrometers and it is doped with Boron at a concentration of 38647230564533395456 cm^-3. The drain region is of the material GaN with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 336178564792590663680 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.84)\n(define Lgl 0.14)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.57)\n(define Ld 0.57)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t138181924382726586368\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t38126734603585404928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t38647230564533395456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t336178564792590663680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 190327518734658666496 cm^-3. The short gate region is of the material Diamond with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 810205580420001038336 cm^-3. The long gate region is of the material SiGe with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 671880990807704600576 cm^-3. The drain region is of the material SiGe with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 796520413373619109888 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.67)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.48)\n(define Ld 0.48)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t190327518734658666496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t810205580420001038336\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t671880990807704600576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t796520413373619109888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 493475088271933046784 cm^-3. The short gate region is of the material GaN with a length of 0.36 micrometers and it is doped with Boron at a concentration of 770302746539203624960 cm^-3. The long gate region is of the material GaN with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 302428241571807363072 cm^-3. The drain region is of the material GaN with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 402707584657951293440 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.36)\n(define Lgl 0.25)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t493475088271933046784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t770302746539203624960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t302428241571807363072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t402707584657951293440\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.15 micrometers and it is doped with Boron at a concentration of 265385564449103020032 cm^-3. The short gate region is of the material Silicon with a length of 0.22 micrometers and it is doped with Boron at a concentration of 685420656222533844992 cm^-3. The long gate region is of the material Diamond with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 561335431457287438336 cm^-3. The drain region is of the material SiGe with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 905567630831191982080 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.22)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t265385564449103020032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t685420656222533844992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t561335431457287438336\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t905567630831191982080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 807324009950679662592 cm^-3. The short gate region is of the material GaN with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 452443631056816177152 cm^-3. The long gate region is of the material Germanium with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 795110849412543414272 cm^-3. The drain region is of the material SiGe with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 614372551286597091328 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.56)\n(define Lgl 0.14)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.77)\n(define Ld 0.77)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t807324009950679662592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t452443631056816177152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t795110849412543414272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t614372551286597091328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.72 micrometers and it is doped with Arsenic at a concentration of 16654475566562856960 cm^-3. The short gate region is of the material Silicon with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 246681094284027920384 cm^-3. The long gate region is of the material GaN with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 568933971733578121216 cm^-3. The drain region is of the material GaN with a length of 0.72 micrometers and it is doped with Boron at a concentration of 278833813409879031808 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.96)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.72)\n(define Ld 0.72)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t16654475566562856960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t246681094284027920384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t568933971733578121216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t278833813409879031808\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 868440867661247414272 cm^-3. The short gate region is of the material Germanium with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 617561190516309098496 cm^-3. The long gate region is of the material SiGe with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 258699671028948172800 cm^-3. The drain region is of the material Germanium with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 555930296799889195008 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.92)\n(define Lgl 0.83)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.41)\n(define Ld 0.41)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t868440867661247414272\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t617561190516309098496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t258699671028948172800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t555930296799889195008\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 672024443038067982336 cm^-3. The short gate region is of the material GaN with a length of 0.3 micrometers and it is doped with Boron at a concentration of 760497362130485248000 cm^-3. The long gate region is of the material Germanium with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 466321033833369567232 cm^-3. The drain region is of the material Silicon with a length of 0.37 micrometers and it is doped with Boron at a concentration of 31964264991258398720 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.3)\n(define Lgl 0.28)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.37)\n(define Ld 0.37)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t672024443038067982336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t760497362130485248000\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t466321033833369567232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t31964264991258398720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.55 micrometers and it is doped with Boron at a concentration of 123219264085240578048 cm^-3. The short gate region is of the material GaN with a length of 0.28 micrometers and it is doped with Boron at a concentration of 536356117050089013248 cm^-3. The long gate region is of the material GaN with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 146469256406061858816 cm^-3. The drain region is of the material GaN with a length of 0.55 micrometers and it is doped with Boron at a concentration of 78346367125855813632 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.28)\n(define Lgl 0.21)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.55)\n(define Ld 0.55)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t123219264085240578048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t536356117050089013248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t146469256406061858816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t78346367125855813632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 627224053166640594944 cm^-3. The short gate region is of the material SiGe with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 638719850762151395328 cm^-3. The long gate region is of the material Silicon with a length of 0.8 micrometers and it is doped with Boron at a concentration of 590178995741251731456 cm^-3. The drain region is of the material Germanium with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 479152536358241435648 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.3)\n(define Lgl 0.8)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t627224053166640594944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t638719850762151395328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t590178995741251731456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t479152536358241435648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.63 micrometers and it is doped with Boron at a concentration of 503832132294536069120 cm^-3. The short gate region is of the material GaN with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 790706866620953001984 cm^-3. The long gate region is of the material Silicon with a length of 0.3 micrometers and it is doped with Boron at a concentration of 244950113652023066624 cm^-3. The drain region is of the material Germanium with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 407694094427403976704 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.01)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.63)\n(define Ld 0.63)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t503832132294536069120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t790706866620953001984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t244950113652023066624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t407694094427403976704\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 850331229100909920256 cm^-3. The short gate region is of the material Silicon with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 449977990906845986816 cm^-3. The long gate region is of the material Germanium with a length of 0.4 micrometers and it is doped with Boron at a concentration of 230422050322799689728 cm^-3. The drain region is of the material Silicon with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 927655889914102939648 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.49)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.34)\n(define Ld 0.34)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t850331229100909920256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t449977990906845986816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t230422050322799689728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t927655889914102939648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 671428509438309433344 cm^-3. The short gate region is of the material Germanium with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 768407612234484285440 cm^-3. The long gate region is of the material GaN with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 717945641263015657472 cm^-3. The drain region is of the material GaN with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 652172812548840095744 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.44)\n(define Lgl 0.92)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.47)\n(define Ld 0.47)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t671428509438309433344\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t768407612234484285440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t717945641263015657472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t652172812548840095744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.64 micrometers and it is doped with Boron at a concentration of 321014183411661275136 cm^-3. The short gate region is of the material Silicon with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 913643204681743728640 cm^-3. The long gate region is of the material Diamond with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 649659547214012612608 cm^-3. The drain region is of the material SiGe with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 835734045368120508416 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.51)\n(define Lgl 0.23)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.64)\n(define Ld 0.64)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t321014183411661275136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t913643204681743728640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t649659547214012612608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t835734045368120508416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 247190248772944723968 cm^-3. The short gate region is of the material Germanium with a length of 0.39 micrometers and it is doped with Boron at a concentration of 594191808572883861504 cm^-3. The long gate region is of the material GaN with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 819354153506899492864 cm^-3. The drain region is of the material Diamond with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 921178256049447763968 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.39)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.92)\n(define Ld 0.92)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t247190248772944723968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t594191808572883861504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t819354153506899492864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t921178256049447763968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 84058693349980372992 cm^-3. The short gate region is of the material Germanium with a length of 0.01 micrometers and it is doped with Boron at a concentration of 891269752279993942016 cm^-3. The long gate region is of the material Silicon with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 13006554206144100352 cm^-3. The drain region is of the material SiGe with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 3778447982175533056 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.01)\n(define Lgl 0.82)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.38)\n(define Ld 0.38)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t84058693349980372992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t891269752279993942016\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t13006554206144100352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t3778447982175533056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 312478988617565732864 cm^-3. The short gate region is of the material SiGe with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 393420558445166985216 cm^-3. The long gate region is of the material SiGe with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 113246612070477938688 cm^-3. The drain region is of the material GaN with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 204470021394922766336 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.22)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t312478988617565732864\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t393420558445166985216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t113246612070477938688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t204470021394922766336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 704087773939572932608 cm^-3. The short gate region is of the material Diamond with a length of 0.6 micrometers and it is doped with Boron at a concentration of 80440670959798665216 cm^-3. The long gate region is of the material Diamond with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 799006962483816038400 cm^-3. The drain region is of the material Diamond with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 765738521337635143680 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.6)\n(define Lgl 0.13)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t704087773939572932608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t80440670959798665216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t799006962483816038400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t765738521337635143680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.67 micrometers and it is doped with Boron at a concentration of 948241318025235922944 cm^-3. The short gate region is of the material Diamond with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 812103130057778528256 cm^-3. The long gate region is of the material Diamond with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 752065546212614340608 cm^-3. The drain region is of the material Silicon with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 833772178196368982016 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.44)\n(define Lgl 0.68)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.67)\n(define Ld 0.67)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t948241318025235922944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t812103130057778528256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t752065546212614340608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t833772178196368982016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 718817712395977752576 cm^-3. The short gate region is of the material Diamond with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 296395646931436699648 cm^-3. The long gate region is of the material GaN with a length of 0.76 micrometers and it is doped with Boron at a concentration of 811375510539540234240 cm^-3. The drain region is of the material Germanium with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 829761069976429395968 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.14)\n(define Lgl 0.76)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.5)\n(define Ld 0.5)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t718817712395977752576\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t296395646931436699648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t811375510539540234240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t829761069976429395968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 435176145313297858560 cm^-3. The short gate region is of the material GaN with a length of 0.14 micrometers and it is doped with Boron at a concentration of 922227831842289745920 cm^-3. The long gate region is of the material GaN with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 870383045649998544896 cm^-3. The drain region is of the material Silicon with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 995304387287688675328 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.14)\n(define Lgl 0.24)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.23)\n(define Ld 0.23)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t435176145313297858560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t922227831842289745920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t870383045649998544896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t995304387287688675328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 480909494527397855232 cm^-3. The short gate region is of the material Diamond with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 79439621773254852608 cm^-3. The long gate region is of the material SiGe with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 693336831347998588928 cm^-3. The drain region is of the material Germanium with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 653346110027975098368 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.83)\n(define Lgl 0.88)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t480909494527397855232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t79439621773254852608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t693336831347998588928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t653346110027975098368\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 945406134378265182208 cm^-3. The short gate region is of the material Germanium with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 857796031709938188288 cm^-3. The long gate region is of the material Diamond with a length of 0.3 micrometers and it is doped with Boron at a concentration of 383516881665183842304 cm^-3. The drain region is of the material SiGe with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 587080556577400946688 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.75)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.27)\n(define Ld 0.27)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t945406134378265182208\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t857796031709938188288\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t383516881665183842304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t587080556577400946688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 644264478628887134208 cm^-3. The short gate region is of the material Diamond with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 230300618452382777344 cm^-3. The long gate region is of the material SiGe with a length of 0.88 micrometers and it is doped with Boron at a concentration of 651772387338874781696 cm^-3. The drain region is of the material Germanium with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 7314053569303393280 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.09)\n(define Lgl 0.88)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t644264478628887134208\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t230300618452382777344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t651772387338874781696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t7314053569303393280\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 316882802965572485120 cm^-3. The short gate region is of the material Germanium with a length of 0.39 micrometers and it is doped with Boron at a concentration of 13136526800697126912 cm^-3. The long gate region is of the material Silicon with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 225130605701120131072 cm^-3. The drain region is of the material GaN with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 998523870555103821824 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.39)\n(define Lgl 0.9)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.19)\n(define Ld 0.19)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t316882802965572485120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t13136526800697126912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t225130605701120131072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t998523870555103821824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 190298279987059523584 cm^-3. The short gate region is of the material Diamond with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 754162431675259027456 cm^-3. The long gate region is of the material Diamond with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 594676112446420942848 cm^-3. The drain region is of the material SiGe with a length of 0.53 micrometers and it is doped with Boron at a concentration of 277932442692733992960 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.45)\n(define Lgl 0.03)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t190298279987059523584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t754162431675259027456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t594676112446420942848\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t277932442692733992960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 905485472149880832000 cm^-3. The short gate region is of the material Germanium with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 816201652013977698304 cm^-3. The long gate region is of the material Diamond with a length of 0.14 micrometers and it is doped with Boron at a concentration of 625898710898711068672 cm^-3. The drain region is of the material GaN with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 830318859256729042944 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.99)\n(define Lgl 0.14)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.84)\n(define Ld 0.84)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t905485472149880832000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t816201652013977698304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t625898710898711068672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t830318859256729042944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 475314111101131030528 cm^-3. The short gate region is of the material GaN with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 501691929975607394304 cm^-3. The long gate region is of the material Diamond with a length of 0.79 micrometers and it is doped with Boron at a concentration of 315926162245271552000 cm^-3. The drain region is of the material GaN with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 407555504801441382400 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.88)\n(define Lgl 0.79)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.73)\n(define Ld 0.73)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t475314111101131030528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t501691929975607394304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t315926162245271552000\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t407555504801441382400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 487398594297915113472 cm^-3. The short gate region is of the material GaN with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 818033800227512516608 cm^-3. The long gate region is of the material Germanium with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 803084223058757025792 cm^-3. The drain region is of the material Germanium with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 773496851582680694784 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.45)\n(define Lgl 0.21)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.8)\n(define Ld 0.8)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t487398594297915113472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t818033800227512516608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t803084223058757025792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t773496851582680694784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.19 micrometers and it is doped with Boron at a concentration of 779629257546218733568 cm^-3. The short gate region is of the material Diamond with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 927815212883166625792 cm^-3. The long gate region is of the material SiGe with a length of 0.43 micrometers and it is doped with Boron at a concentration of 58459994028158910464 cm^-3. The drain region is of the material Silicon with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 635056395139233611776 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.95)\n(define Lgl 0.43)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.19)\n(define Ld 0.19)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t779629257546218733568\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t927815212883166625792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t58459994028158910464\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t635056395139233611776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.1 micrometers and it is doped with Boron at a concentration of 82822365791548506112 cm^-3. The short gate region is of the material GaN with a length of 0.44 micrometers and it is doped with Boron at a concentration of 573421785876700200960 cm^-3. The long gate region is of the material Diamond with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 158112668035865903104 cm^-3. The drain region is of the material SiGe with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 692326767086039728128 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.44)\n(define Lgl 0.52)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.1)\n(define Ld 0.1)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t82822365791548506112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t573421785876700200960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t158112668035865903104\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t692326767086039728128\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 169737055437849001984 cm^-3. The short gate region is of the material Silicon with a length of 0.47 micrometers and it is doped with Boron at a concentration of 457828675366248644608 cm^-3. The long gate region is of the material Diamond with a length of 0.27 micrometers and it is doped with Boron at a concentration of 743799817494504407040 cm^-3. The drain region is of the material SiGe with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 301027217689856311296 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.47)\n(define Lgl 0.27)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.87)\n(define Ld 0.87)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t169737055437849001984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t457828675366248644608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t743799817494504407040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t301027217689856311296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 937733038755028140032 cm^-3. The short gate region is of the material Germanium with a length of 0.77 micrometers and it is doped with Boron at a concentration of 318516444040521449472 cm^-3. The long gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 187514843730534531072 cm^-3. The drain region is of the material Diamond with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 594546844029774069760 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.77)\n(define Lgl 0.34)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t937733038755028140032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t318516444040521449472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t187514843730534531072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t594546844029774069760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.48 micrometers and it is doped with Boron at a concentration of 809800434558565089280 cm^-3. The short gate region is of the material Diamond with a length of 0.39 micrometers and it is doped with Boron at a concentration of 537866554128241131520 cm^-3. The long gate region is of the material Silicon with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 97263474419697025024 cm^-3. The drain region is of the material SiGe with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 535242501237017804800 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.39)\n(define Lgl 0.41)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.48)\n(define Ld 0.48)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t809800434558565089280\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t537866554128241131520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t97263474419697025024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t535242501237017804800\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.96 micrometers and it is doped with Boron at a concentration of 276636176134281232384 cm^-3. The short gate region is of the material SiGe with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 178436466709584216064 cm^-3. The long gate region is of the material Silicon with a length of 0.12 micrometers and it is doped with Boron at a concentration of 245787222769772527616 cm^-3. The drain region is of the material Diamond with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 382855021117880532992 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.99)\n(define Lgl 0.12)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t276636176134281232384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t178436466709584216064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t245787222769772527616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t382855021117880532992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 525005416677072568320 cm^-3. The short gate region is of the material GaN with a length of 0.43 micrometers and it is doped with Boron at a concentration of 193750129402762231808 cm^-3. The long gate region is of the material Germanium with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 620441434318727675904 cm^-3. The drain region is of the material SiGe with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 323894932936981348352 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.43)\n(define Lgl 0.95)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.86)\n(define Ld 0.86)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t525005416677072568320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t193750129402762231808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t620441434318727675904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t323894932936981348352\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 329679294250987159552 cm^-3. The short gate region is of the material GaN with a length of 0.9 micrometers and it is doped with Boron at a concentration of 43401153537031364608 cm^-3. The long gate region is of the material Diamond with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 932509735809785790464 cm^-3. The drain region is of the material Diamond with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 30737854482394533888 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.9)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.38)\n(define Ld 0.38)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t329679294250987159552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t43401153537031364608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t932509735809785790464\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t30737854482394533888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 436223384792601985024 cm^-3. The short gate region is of the material Silicon with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 341204996531179618304 cm^-3. The long gate region is of the material Germanium with a length of 0.93 micrometers and it is doped with Boron at a concentration of 464994576417512095744 cm^-3. The drain region is of the material Diamond with a length of 0.66 micrometers and it is doped with Boron at a concentration of 183367752318985633792 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.27)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.66)\n(define Ld 0.66)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t436223384792601985024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t341204996531179618304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t464994576417512095744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t183367752318985633792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 329456809004248072192 cm^-3. The short gate region is of the material SiGe with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 181390613474252292096 cm^-3. The long gate region is of the material Germanium with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 97708394875095908352 cm^-3. The drain region is of the material Germanium with a length of 0.18 micrometers and it is doped with Boron at a concentration of 820897283824288530432 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.66)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.18)\n(define Ld 0.18)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t329456809004248072192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t181390613474252292096\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t97708394875095908352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t820897283824288530432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.36 micrometers and it is doped with Boron at a concentration of 872762429580082151424 cm^-3. The short gate region is of the material GaN with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 227407623690724671488 cm^-3. The long gate region is of the material GaN with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 968601485058248015872 cm^-3. The drain region is of the material Germanium with a length of 0.36 micrometers and it is doped with Boron at a concentration of 600978614110763876352 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.89)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.36)\n(define Ld 0.36)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t872762429580082151424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t227407623690724671488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t968601485058248015872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t600978614110763876352\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.13 micrometers and it is doped with Boron at a concentration of 165264373403625816064 cm^-3. The short gate region is of the material Diamond with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 828306613460425506816 cm^-3. The long gate region is of the material Germanium with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 858830292133779734528 cm^-3. The drain region is of the material GaN with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 649015939200521732096 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.61)\n(define Lgl 0.29)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.13)\n(define Ld 0.13)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t165264373403625816064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t828306613460425506816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t858830292133779734528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t649015939200521732096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 46232862603164278784 cm^-3. The short gate region is of the material SiGe with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 283010948268286050304 cm^-3. The long gate region is of the material SiGe with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 915371566365671424000 cm^-3. The drain region is of the material Diamond with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 126838310675080347648 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.16)\n(define Lgl 0.04)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.55)\n(define Ld 0.55)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t46232862603164278784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t283010948268286050304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t915371566365671424000\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t126838310675080347648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 533793957410805776384 cm^-3. The short gate region is of the material Germanium with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 902333326094308343808 cm^-3. The long gate region is of the material Germanium with a length of 0.83 micrometers and it is doped with Boron at a concentration of 912365557992018542592 cm^-3. The drain region is of the material Diamond with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 755503994888788901888 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.6)\n(define Lgl 0.83)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.77)\n(define Ld 0.77)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t533793957410805776384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t902333326094308343808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t912365557992018542592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t755503994888788901888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.56 micrometers and it is doped with Boron at a concentration of 977487598786110816256 cm^-3. The short gate region is of the material Germanium with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 346667475104826785792 cm^-3. The long gate region is of the material Germanium with a length of 0.86 micrometers and it is doped with Boron at a concentration of 151195812385686749184 cm^-3. The drain region is of the material GaN with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 668355913923094249472 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.18)\n(define Lgl 0.86)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.56)\n(define Ld 0.56)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t977487598786110816256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t346667475104826785792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t151195812385686749184\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t668355913923094249472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.37 micrometers and it is doped with Arsenic at a concentration of 769856404996062576640 cm^-3. The short gate region is of the material SiGe with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 245892851918219149312 cm^-3. The long gate region is of the material Germanium with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 436947123897101713408 cm^-3. The drain region is of the material Germanium with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 565252428959679774720 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.39)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.37)\n(define Ld 0.37)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t769856404996062576640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t245892851918219149312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t436947123897101713408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t565252428959679774720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 703768854407143620608 cm^-3. The short gate region is of the material Germanium with a length of 0.45 micrometers and it is doped with Boron at a concentration of 292411691812833951744 cm^-3. The long gate region is of the material Silicon with a length of 0.36 micrometers and it is doped with Boron at a concentration of 449534114185902424064 cm^-3. The drain region is of the material Silicon with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 33412017977502658560 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.45)\n(define Lgl 0.36)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.29)\n(define Ld 0.29)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t703768854407143620608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t292411691812833951744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t449534114185902424064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t33412017977502658560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 614265527554921725952 cm^-3. The short gate region is of the material GaN with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 795430082817691484160 cm^-3. The long gate region is of the material Diamond with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 306131696760490688512 cm^-3. The drain region is of the material Germanium with a length of 0.43 micrometers and it is doped with Boron at a concentration of 103049998196763279360 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.26)\n(define Lgl 0.81)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.43)\n(define Ld 0.43)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t614265527554921725952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t795430082817691484160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t306131696760490688512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t103049998196763279360\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.94 micrometers and it is doped with Boron at a concentration of 551517673778460884992 cm^-3. The short gate region is of the material Diamond with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 128019646360608210944 cm^-3. The long gate region is of the material SiGe with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 294952348895949357056 cm^-3. The drain region is of the material GaN with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 749773481920791969792 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.29)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.94)\n(define Ld 0.94)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t551517673778460884992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t128019646360608210944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t294952348895949357056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t749773481920791969792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.52 micrometers and it is doped with Boron at a concentration of 554644888816753967104 cm^-3. The short gate region is of the material Germanium with a length of 0.87 micrometers and it is doped with Boron at a concentration of 399577465711722758144 cm^-3. The long gate region is of the material Silicon with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 532584419051835359232 cm^-3. The drain region is of the material Diamond with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 609863187501011173376 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.87)\n(define Lgl 0.58)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.52)\n(define Ld 0.52)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t554644888816753967104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t399577465711722758144\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t532584419051835359232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t609863187501011173376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 638227906508342034432 cm^-3. The short gate region is of the material GaN with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 747686885270037069824 cm^-3. The long gate region is of the material SiGe with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 781235234972916121600 cm^-3. The drain region is of the material Silicon with a length of 0.7 micrometers and it is doped with Boron at a concentration of 784857371319420452864 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.31)\n(define Lgl 0.71)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.7)\n(define Ld 0.7)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t638227906508342034432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t747686885270037069824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t781235234972916121600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t784857371319420452864\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 837577663434691313664 cm^-3. The short gate region is of the material Diamond with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 899588086211870720000 cm^-3. The long gate region is of the material SiGe with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 584071807299838803968 cm^-3. The drain region is of the material SiGe with a length of 0.75 micrometers and it is doped with Arsenic at a concentration of 600618933156030578688 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.07)\n(define Lgl 0.82)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.75)\n(define Ld 0.75)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t837577663434691313664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t899588086211870720000\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t584071807299838803968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t600618933156030578688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.97 micrometers and it is doped with Boron at a concentration of 198209412455323467776 cm^-3. The short gate region is of the material Silicon with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 690324832915104858112 cm^-3. The long gate region is of the material Silicon with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 660363659902628265984 cm^-3. The drain region is of the material Silicon with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 490828766841796558848 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.95)\n(define Lgl 0.06)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.97)\n(define Ld 0.97)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t198209412455323467776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t690324832915104858112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t660363659902628265984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t490828766841796558848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 685031182370115551232 cm^-3. The short gate region is of the material SiGe with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 116439377732970954752 cm^-3. The long gate region is of the material GaN with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 291377090168011751424 cm^-3. The drain region is of the material Germanium with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 275162230739869761536 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.62)\n(define Lgl 0.17)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.17)\n(define Ld 0.17)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t685031182370115551232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t116439377732970954752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t291377090168011751424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t275162230739869761536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 86668589273777471488 cm^-3. The short gate region is of the material Silicon with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 884534489891254042624 cm^-3. The long gate region is of the material Diamond with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 999110475651801284608 cm^-3. The drain region is of the material GaN with a length of 0.89 micrometers and it is doped with Boron at a concentration of 794720921417747136512 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.63)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.89)\n(define Ld 0.89)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t86668589273777471488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t884534489891254042624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t999110475651801284608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t794720921417747136512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 638132985899329781760 cm^-3. The short gate region is of the material Diamond with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 397321716174237335552 cm^-3. The long gate region is of the material Diamond with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 994566703478865788928 cm^-3. The drain region is of the material Germanium with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 464813141349330714624 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.07)\n(define Lgl 0.54)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.25)\n(define Ld 0.25)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t638132985899329781760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t397321716174237335552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t994566703478865788928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t464813141349330714624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 560736503284917469184 cm^-3. The short gate region is of the material SiGe with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 936823187959469047808 cm^-3. The long gate region is of the material Diamond with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 737378788345445220352 cm^-3. The drain region is of the material Diamond with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 680801767086067154944 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.87)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.17)\n(define Ld 0.17)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t560736503284917469184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t936823187959469047808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t737378788345445220352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t680801767086067154944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 626104201686274277376 cm^-3. The short gate region is of the material Germanium with a length of 0.63 micrometers and it is doped with Boron at a concentration of 516657624468983250944 cm^-3. The long gate region is of the material GaN with a length of 0.37 micrometers and it is doped with Boron at a concentration of 651100060072202207232 cm^-3. The drain region is of the material Germanium with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 379663814617142788096 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.63)\n(define Lgl 0.37)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t626104201686274277376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t516657624468983250944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t651100060072202207232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t379663814617142788096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 760522356901953273856 cm^-3. The short gate region is of the material Silicon with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 523834085176547344384 cm^-3. The long gate region is of the material Germanium with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 305842996739064070144 cm^-3. The drain region is of the material Silicon with a length of 0.89 micrometers and it is doped with Boron at a concentration of 251767163175467188224 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.67)\n(define Lgl 0.04)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.89)\n(define Ld 0.89)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t760522356901953273856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t523834085176547344384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t305842996739064070144\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t251767163175467188224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.75 micrometers and it is doped with Boron at a concentration of 445291119760721969152 cm^-3. The short gate region is of the material GaN with a length of 0.15 micrometers and it is doped with Boron at a concentration of 756899955373221347328 cm^-3. The long gate region is of the material SiGe with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 647086227237034262528 cm^-3. The drain region is of the material Silicon with a length of 0.75 micrometers and it is doped with Boron at a concentration of 398418448768421199872 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.15)\n(define Lgl 0.09)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.75)\n(define Ld 0.75)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t445291119760721969152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t756899955373221347328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t647086227237034262528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t398418448768421199872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.13 micrometers and it is doped with Boron at a concentration of 456867033811015958528 cm^-3. The short gate region is of the material Silicon with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 773696171108149886976 cm^-3. The long gate region is of the material Silicon with a length of 0.57 micrometers and it is doped with Boron at a concentration of 407968641554691260416 cm^-3. The drain region is of the material Diamond with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 964271126575692513280 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.8)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.13)\n(define Ld 0.13)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t456867033811015958528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t773696171108149886976\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t407968641554691260416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t964271126575692513280\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.41 micrometers and it is doped with Boron at a concentration of 559230073960502394880 cm^-3. The short gate region is of the material SiGe with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 228410640587992858624 cm^-3. The long gate region is of the material SiGe with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 466716981471179440128 cm^-3. The drain region is of the material SiGe with a length of 0.41 micrometers and it is doped with Boron at a concentration of 387910137338430357504 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.99)\n(define Lgl 0.91)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.41)\n(define Ld 0.41)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t559230073960502394880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t228410640587992858624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t466716981471179440128\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t387910137338430357504\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.38 micrometers and it is doped with Boron at a concentration of 396326060749379993600 cm^-3. The short gate region is of the material Silicon with a length of 0.65 micrometers and it is doped with Arsenic at a concentration of 909625150448140025856 cm^-3. The long gate region is of the material SiGe with a length of 0.84 micrometers and it is doped with Boron at a concentration of 717650907676760604672 cm^-3. The drain region is of the material Diamond with a length of 0.38 micrometers and it is doped with Boron at a concentration of 657433660471946772480 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.65)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.38)\n(define Ld 0.38)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t396326060749379993600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t909625150448140025856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t717650907676760604672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t657433660471946772480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.45 micrometers and it is doped with Boron at a concentration of 102155674344464384000 cm^-3. The short gate region is of the material GaN with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 766997697767705673728 cm^-3. The long gate region is of the material Diamond with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 271661125451173199872 cm^-3. The drain region is of the material GaN with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 215432782776551112704 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.06)\n(define Lgl 0.49)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t102155674344464384000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t766997697767705673728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t271661125451173199872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t215432782776551112704\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 171527007474352357376 cm^-3. The short gate region is of the material GaN with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 552864305271284432896 cm^-3. The long gate region is of the material Germanium with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 729490430799931899904 cm^-3. The drain region is of the material Germanium with a length of 0.25 micrometers and it is doped with Boron at a concentration of 806104244526340112384 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.93)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.25)\n(define Ld 0.25)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t171527007474352357376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t552864305271284432896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t729490430799931899904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t806104244526340112384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.57 micrometers and it is doped with Boron at a concentration of 787702301181259153408 cm^-3. The short gate region is of the material GaN with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 417796301222990577664 cm^-3. The long gate region is of the material Germanium with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 652796035418618593280 cm^-3. The drain region is of the material SiGe with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 855371623989372911616 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.01)\n(define Lgl 0.24)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.57)\n(define Ld 0.57)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t787702301181259153408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t417796301222990577664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t652796035418618593280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t855371623989372911616\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 496468298395206287360 cm^-3. The short gate region is of the material Germanium with a length of 0.54 micrometers and it is doped with Boron at a concentration of 55815753463572725760 cm^-3. The long gate region is of the material GaN with a length of 0.96 micrometers and it is doped with Boron at a concentration of 510157756289259143168 cm^-3. The drain region is of the material Silicon with a length of 0.6 micrometers and it is doped with Boron at a concentration of 128616076614046285824 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.54)\n(define Lgl 0.96)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.6)\n(define Ld 0.6)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t496468298395206287360\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t55815753463572725760\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t510157756289259143168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t128616076614046285824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.75 micrometers and it is doped with Boron at a concentration of 368250834209773846528 cm^-3. The short gate region is of the material Silicon with a length of 0.22 micrometers and it is doped with Boron at a concentration of 48273221936988626944 cm^-3. The long gate region is of the material Diamond with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 184665491847748288512 cm^-3. The drain region is of the material GaN with a length of 0.75 micrometers and it is doped with Arsenic at a concentration of 86762669077774548992 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.22)\n(define Lgl 0.46)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.75)\n(define Ld 0.75)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t368250834209773846528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t48273221936988626944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t184665491847748288512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t86762669077774548992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 256058414259503661056 cm^-3. The short gate region is of the material SiGe with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 337775274858198073344 cm^-3. The long gate region is of the material Diamond with a length of 0.5 micrometers and it is doped with Boron at a concentration of 554685851277588955136 cm^-3. The drain region is of the material Diamond with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 82995959256348622848 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.13)\n(define Lgl 0.5)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.87)\n(define Ld 0.87)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t256058414259503661056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t337775274858198073344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t554685851277588955136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t82995959256348622848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 884990849211067400192 cm^-3. The short gate region is of the material Diamond with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 211756866201896845312 cm^-3. The long gate region is of the material SiGe with a length of 0.52 micrometers and it is doped with Boron at a concentration of 18269862869352744960 cm^-3. The drain region is of the material GaN with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 750756680834519269376 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.87)\n(define Lgl 0.52)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.42)\n(define Ld 0.42)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t884990849211067400192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t211756866201896845312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t18269862869352744960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t750756680834519269376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.8 micrometers and it is doped with Boron at a concentration of 26864319614837301248 cm^-3. The short gate region is of the material GaN with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 618197154881744535552 cm^-3. The long gate region is of the material GaN with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 428367205605764628480 cm^-3. The drain region is of the material Silicon with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 48343761485343039488 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.04)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.8)\n(define Ld 0.8)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t26864319614837301248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t618197154881744535552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t428367205605764628480\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t48343761485343039488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 925749075267980623872 cm^-3. The short gate region is of the material GaN with a length of 0.57 micrometers and it is doped with Boron at a concentration of 711885820164087480320 cm^-3. The long gate region is of the material Silicon with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 612548151359440683008 cm^-3. The drain region is of the material GaN with a length of 0.03 micrometers and it is doped with Boron at a concentration of 940534606047434768384 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.57)\n(define Lgl 0.7)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.03)\n(define Ld 0.03)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t925749075267980623872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t711885820164087480320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t612548151359440683008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t940534606047434768384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 579788083643122319360 cm^-3. The short gate region is of the material GaN with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 737533897432928616448 cm^-3. The long gate region is of the material Diamond with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 316565274358249816064 cm^-3. The drain region is of the material GaN with a length of 0.47 micrometers and it is doped with Boron at a concentration of 427480993294546763776 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.88)\n(define Lgl 0.36)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.47)\n(define Ld 0.47)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t579788083643122319360\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t737533897432928616448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t316565274358249816064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t427480993294546763776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 969784424330374414336 cm^-3. The short gate region is of the material Diamond with a length of 0.38 micrometers and it is doped with Boron at a concentration of 326917615259059748864 cm^-3. The long gate region is of the material Diamond with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 262090621892857724928 cm^-3. The drain region is of the material Germanium with a length of 0.45 micrometers and it is doped with Boron at a concentration of 948846240818520522752 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.38)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t969784424330374414336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t326917615259059748864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t262090621892857724928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t948846240818520522752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 875087470177644314624 cm^-3. The short gate region is of the material SiGe with a length of 0.57 micrometers and it is doped with Boron at a concentration of 353247718245054414848 cm^-3. The long gate region is of the material Silicon with a length of 0.97 micrometers and it is doped with Arsenic at a concentration of 648086595666896879616 cm^-3. The drain region is of the material Silicon with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 588289086594226061312 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.57)\n(define Lgl 0.97)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.79)\n(define Ld 0.79)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t875087470177644314624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t353247718245054414848\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t648086595666896879616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t588289086594226061312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 58316422120965971968 cm^-3. The short gate region is of the material Silicon with a length of 0.06 micrometers and it is doped with Boron at a concentration of 130344031094828204032 cm^-3. The long gate region is of the material SiGe with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 714675018735407988736 cm^-3. The drain region is of the material Silicon with a length of 0.7 micrometers and it is doped with Boron at a concentration of 243529692617485647872 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.06)\n(define Lgl 0.88)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.7)\n(define Ld 0.7)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t58316422120965971968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t130344031094828204032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t714675018735407988736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t243529692617485647872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 960611009382292258816 cm^-3. The short gate region is of the material Germanium with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 461922577621614329856 cm^-3. The long gate region is of the material SiGe with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 337279779216007626752 cm^-3. The drain region is of the material Diamond with a length of 0.19 micrometers and it is doped with Boron at a concentration of 943684852235377836032 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.85)\n(define Lgl 0.5)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.19)\n(define Ld 0.19)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t960611009382292258816\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t461922577621614329856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t337279779216007626752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t943684852235377836032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.82 micrometers and it is doped with Boron at a concentration of 438155652800587890688 cm^-3. The short gate region is of the material SiGe with a length of 0.62 micrometers and it is doped with Boron at a concentration of 451852250029919698944 cm^-3. The long gate region is of the material SiGe with a length of 0.86 micrometers and it is doped with Boron at a concentration of 738747625956163321856 cm^-3. The drain region is of the material GaN with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 422953891877057069056 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.62)\n(define Lgl 0.86)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.82)\n(define Ld 0.82)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t438155652800587890688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t451852250029919698944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t738747625956163321856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t422953891877057069056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 907922892133951733760 cm^-3. The short gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Boron at a concentration of 309396587581131063296 cm^-3. The long gate region is of the material Diamond with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 280296489699169566720 cm^-3. The drain region is of the material Diamond with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 211422290397490839552 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.55)\n(define Lgl 0.96)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.41)\n(define Ld 0.41)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t907922892133951733760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t309396587581131063296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t280296489699169566720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t211422290397490839552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.33 micrometers and it is doped with Boron at a concentration of 5418747583837084672 cm^-3. The short gate region is of the material SiGe with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 820433229827543007232 cm^-3. The long gate region is of the material SiGe with a length of 0.2 micrometers and it is doped with Boron at a concentration of 617869423798439641088 cm^-3. The drain region is of the material Diamond with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 373529714091490410496 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.13)\n(define Lgl 0.2)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t5418747583837084672\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t820433229827543007232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t617869423798439641088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t373529714091490410496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.18 micrometers and it is doped with Boron at a concentration of 185567381200461234176 cm^-3. The short gate region is of the material GaN with a length of 0.28 micrometers and it is doped with Boron at a concentration of 515542190621115154432 cm^-3. The long gate region is of the material Silicon with a length of 0.3 micrometers and it is doped with Boron at a concentration of 150069937880651104256 cm^-3. The drain region is of the material Germanium with a length of 0.18 micrometers and it is doped with Boron at a concentration of 211084387294649253888 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.28)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.18)\n(define Ld 0.18)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t185567381200461234176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t515542190621115154432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t150069937880651104256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t211084387294649253888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.4 micrometers and it is doped with Boron at a concentration of 730952517001253617664 cm^-3. The short gate region is of the material Germanium with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 11772306718241988608 cm^-3. The long gate region is of the material Germanium with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 111451124599463116800 cm^-3. The drain region is of the material SiGe with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 475574539760721199104 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.35)\n(define Lgl 0.24)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t730952517001253617664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t11772306718241988608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t111451124599463116800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t475574539760721199104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.9 micrometers and it is doped with Boron at a concentration of 234694157584437444608 cm^-3. The short gate region is of the material SiGe with a length of 0.67 micrometers and it is doped with Boron at a concentration of 232257788615039156224 cm^-3. The long gate region is of the material GaN with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 899075089634498838528 cm^-3. The drain region is of the material Germanium with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 176087650182649085952 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.67)\n(define Lgl 0.59)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t234694157584437444608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t232257788615039156224\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t899075089634498838528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t176087650182649085952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 658179046520019877888 cm^-3. The short gate region is of the material Diamond with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 872564435421857579008 cm^-3. The long gate region is of the material Diamond with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 506158992901516296192 cm^-3. The drain region is of the material Diamond with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 587062096521899540480 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.08)\n(define Lgl 0.32)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.54)\n(define Ld 0.54)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t658179046520019877888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t872564435421857579008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t506158992901516296192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t587062096521899540480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.72 micrometers and it is doped with Boron at a concentration of 611009546965162000384 cm^-3. The short gate region is of the material GaN with a length of 0.08 micrometers and it is doped with Boron at a concentration of 822051668373990277120 cm^-3. The long gate region is of the material Germanium with a length of 0.02 micrometers and it is doped with Boron at a concentration of 592927746578895863808 cm^-3. The drain region is of the material Germanium with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 331201224798352703488 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.08)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.72)\n(define Ld 0.72)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t611009546965162000384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t822051668373990277120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t592927746578895863808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t331201224798352703488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.3 micrometers and it is doped with Boron at a concentration of 63253504829496066048 cm^-3. The short gate region is of the material SiGe with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 351803266334052057088 cm^-3. The long gate region is of the material Diamond with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 969948309908205600768 cm^-3. The drain region is of the material Diamond with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 701192033115813969920 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.86)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t63253504829496066048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t351803266334052057088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t969948309908205600768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t701192033115813969920\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 821755071487004246016 cm^-3. The short gate region is of the material Silicon with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 944455402907001683968 cm^-3. The long gate region is of the material Diamond with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 220131388840581660672 cm^-3. The drain region is of the material Diamond with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 153328362833677385728 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.54)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.08)\n(define Ld 0.08)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t821755071487004246016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t944455402907001683968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t220131388840581660672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t153328362833677385728\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 840278373782115057664 cm^-3. The short gate region is of the material Germanium with a length of 0.23 micrometers and it is doped with Boron at a concentration of 877143101793632780288 cm^-3. The long gate region is of the material Diamond with a length of 0.1 micrometers and it is doped with Boron at a concentration of 684215176129325170688 cm^-3. The drain region is of the material Diamond with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 197559013386356228096 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.23)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.27)\n(define Ld 0.27)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t840278373782115057664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t877143101793632780288\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t684215176129325170688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t197559013386356228096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 344761534848635502592 cm^-3. The short gate region is of the material SiGe with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 132693432284204875776 cm^-3. The long gate region is of the material Diamond with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 31261262762855759872 cm^-3. The drain region is of the material Diamond with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 45755854065805975552 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.89)\n(define Lgl 0.24)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.23)\n(define Ld 0.23)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t344761534848635502592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t132693432284204875776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t31261262762855759872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t45755854065805975552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 297118508994348843008 cm^-3. The short gate region is of the material Diamond with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 674704438508781699072 cm^-3. The long gate region is of the material Germanium with a length of 0.27 micrometers and it is doped with Boron at a concentration of 879080518415969419264 cm^-3. The drain region is of the material Silicon with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 369817286203563966464 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.12)\n(define Lgl 0.27)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.17)\n(define Ld 0.17)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t297118508994348843008\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t674704438508781699072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t879080518415969419264\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t369817286203563966464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 250359167776094191616 cm^-3. The short gate region is of the material Germanium with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 189046353854123573248 cm^-3. The long gate region is of the material Germanium with a length of 0.45 micrometers and it is doped with Boron at a concentration of 137586571212103057408 cm^-3. The drain region is of the material Diamond with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 456221827828509048832 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.71)\n(define Lgl 0.45)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.69)\n(define Ld 0.69)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t250359167776094191616\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t189046353854123573248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t137586571212103057408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t456221827828509048832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 723562437189877628928 cm^-3. The short gate region is of the material Germanium with a length of 0.56 micrometers and it is doped with Boron at a concentration of 660383346628898586624 cm^-3. The long gate region is of the material Diamond with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 486100170723831185408 cm^-3. The drain region is of the material SiGe with a length of 0.9 micrometers and it is doped with Boron at a concentration of 36157897164167827456 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.56)\n(define Lgl 0.79)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t723562437189877628928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t660383346628898586624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t486100170723831185408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t36157897164167827456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 401696861133874659328 cm^-3. The short gate region is of the material Diamond with a length of 0.37 micrometers and it is doped with Boron at a concentration of 211479839609668468736 cm^-3. The long gate region is of the material GaN with a length of 0.65 micrometers and it is doped with Arsenic at a concentration of 747274015364325703680 cm^-3. The drain region is of the material Germanium with a length of 0.37 micrometers and it is doped with Boron at a concentration of 702101117712401301504 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.37)\n(define Lgl 0.65)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.37)\n(define Ld 0.37)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t401696861133874659328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t211479839609668468736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t747274015364325703680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t702101117712401301504\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 213424815350377938944 cm^-3. The short gate region is of the material Silicon with a length of 0.73 micrometers and it is doped with Boron at a concentration of 891814120859746041856 cm^-3. The long gate region is of the material GaN with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 254554259690251485184 cm^-3. The drain region is of the material SiGe with a length of 0.66 micrometers and it is doped with Boron at a concentration of 263433977448989523968 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.73)\n(define Lgl 0.78)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.66)\n(define Ld 0.66)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t213424815350377938944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t891814120859746041856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t254554259690251485184\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t263433977448989523968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 638791291953055924224 cm^-3. The short gate region is of the material GaN with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 847787243917049200640 cm^-3. The long gate region is of the material Germanium with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 370701184707997466624 cm^-3. The drain region is of the material Germanium with a length of 0.89 micrometers and it is doped with Boron at a concentration of 578470903572634009600 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.29)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.89)\n(define Ld 0.89)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t638791291953055924224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t847787243917049200640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t370701184707997466624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t578470903572634009600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 217095016541738401792 cm^-3. The short gate region is of the material SiGe with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 624633145729627979776 cm^-3. The long gate region is of the material Germanium with a length of 0.51 micrometers and it is doped with Boron at a concentration of 305938035215270805504 cm^-3. The drain region is of the material Diamond with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 527705530484354318336 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.16)\n(define Lgl 0.51)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.29)\n(define Ld 0.29)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t217095016541738401792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t624633145729627979776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t305938035215270805504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t527705530484354318336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 44065710636843286528 cm^-3. The short gate region is of the material Silicon with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 81712524699780005888 cm^-3. The long gate region is of the material Silicon with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 996125460131310469120 cm^-3. The drain region is of the material SiGe with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 815647689514602594304 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.51)\n(define Lgl 0.22)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.07)\n(define Ld 0.07)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t44065710636843286528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t81712524699780005888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t996125460131310469120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t815647689514602594304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 238698721172966801408 cm^-3. The short gate region is of the material SiGe with a length of 0.76 micrometers and it is doped with Boron at a concentration of 263705674735144140800 cm^-3. The long gate region is of the material Diamond with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 849262648961616576512 cm^-3. The drain region is of the material Silicon with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 6879562698839932928 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.76)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t238698721172966801408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t263705674735144140800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t849262648961616576512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t6879562698839932928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 388216803281836048384 cm^-3. The short gate region is of the material SiGe with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 973597746866433687552 cm^-3. The long gate region is of the material GaN with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 935662940391267893248 cm^-3. The drain region is of the material Silicon with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 587173412828721315840 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.75)\n(define Lgl 0.89)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.24)\n(define Ld 0.24)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t388216803281836048384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t973597746866433687552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t935662940391267893248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t587173412828721315840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 595813580720163782656 cm^-3. The short gate region is of the material SiGe with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 301839671143825801216 cm^-3. The long gate region is of the material SiGe with a length of 0.75 micrometers and it is doped with Arsenic at a concentration of 295339195527598964736 cm^-3. The drain region is of the material SiGe with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 196764460233068150784 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.69)\n(define Lgl 0.75)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.34)\n(define Ld 0.34)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t595813580720163782656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t301839671143825801216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t295339195527598964736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t196764460233068150784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.15 micrometers and it is doped with Boron at a concentration of 421009470368120700928 cm^-3. The short gate region is of the material SiGe with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 114582541081639485440 cm^-3. The long gate region is of the material GaN with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 941715047634452348928 cm^-3. The drain region is of the material SiGe with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 661412728938009067520 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.69)\n(define Lgl 0.78)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t421009470368120700928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t114582541081639485440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t941715047634452348928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t661412728938009067520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 990509704103748829184 cm^-3. The short gate region is of the material Germanium with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 86074667262246649856 cm^-3. The long gate region is of the material Diamond with a length of 0.74 micrometers and it is doped with Boron at a concentration of 217434264495261089792 cm^-3. The drain region is of the material Diamond with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 458134651882974871552 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.01)\n(define Lgl 0.74)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.19)\n(define Ld 0.19)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t990509704103748829184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t86074667262246649856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t217434264495261089792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t458134651882974871552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 907024750570388324352 cm^-3. The short gate region is of the material Diamond with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 664177113883156938752 cm^-3. The long gate region is of the material GaN with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 389154048722584338432 cm^-3. The drain region is of the material SiGe with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 320261290634799874048 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.75)\n(define Lgl 0.88)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.23)\n(define Ld 0.23)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t907024750570388324352\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t664177113883156938752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t389154048722584338432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t320261290634799874048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 285490439240856469504 cm^-3. The short gate region is of the material SiGe with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 534443210864579444736 cm^-3. The long gate region is of the material Silicon with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 330671031598656126976 cm^-3. The drain region is of the material Silicon with a length of 0.71 micrometers and it is doped with Boron at a concentration of 686375539596206669824 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.06)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.71)\n(define Ld 0.71)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t285490439240856469504\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t534443210864579444736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t330671031598656126976\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t686375539596206669824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 724142514452609236992 cm^-3. The short gate region is of the material GaN with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 882443325550638661632 cm^-3. The long gate region is of the material Diamond with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 422508967310511964160 cm^-3. The drain region is of the material GaN with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 855700826633714794496 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.69)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t724142514452609236992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t882443325550638661632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t422508967310511964160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t855700826633714794496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.74 micrometers and it is doped with Boron at a concentration of 31577286435029184512 cm^-3. The short gate region is of the material Silicon with a length of 0.02 micrometers and it is doped with Boron at a concentration of 493534210045987389440 cm^-3. The long gate region is of the material Diamond with a length of 0.07 micrometers and it is doped with Boron at a concentration of 105783010596680482816 cm^-3. The drain region is of the material GaN with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 132260670871909138432 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.02)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.74)\n(define Ld 0.74)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t31577286435029184512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t493534210045987389440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t105783010596680482816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t132260670871909138432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 624691413886960533504 cm^-3. The short gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 108180613493988261888 cm^-3. The long gate region is of the material GaN with a length of 0.65 micrometers and it is doped with Boron at a concentration of 409865226377699655680 cm^-3. The drain region is of the material Germanium with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 369164864272396189696 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.34)\n(define Lgl 0.65)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t624691413886960533504\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t108180613493988261888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t409865226377699655680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t369164864272396189696\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 216759876648546369536 cm^-3. The short gate region is of the material GaN with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 395819428145509433344 cm^-3. The long gate region is of the material SiGe with a length of 0.06 micrometers and it is doped with Boron at a concentration of 97999535010232680448 cm^-3. The drain region is of the material SiGe with a length of 0.33 micrometers and it is doped with Boron at a concentration of 127417732854096281600 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.79)\n(define Lgl 0.06)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t216759876648546369536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t395819428145509433344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t97999535010232680448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t127417732854096281600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 253929506275326099456 cm^-3. The short gate region is of the material GaN with a length of 0.34 micrometers and it is doped with Boron at a concentration of 417418946456085725184 cm^-3. The long gate region is of the material Silicon with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 446322573538936225792 cm^-3. The drain region is of the material Diamond with a length of 0.55 micrometers and it is doped with Boron at a concentration of 358720116670945296384 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.34)\n(define Lgl 0.41)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.55)\n(define Ld 0.55)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t253929506275326099456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t417418946456085725184\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t446322573538936225792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t358720116670945296384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 209803952415726960640 cm^-3. The short gate region is of the material GaN with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 387299879631962767360 cm^-3. The long gate region is of the material Germanium with a length of 0.32 micrometers and it is doped with Boron at a concentration of 386779795704932204544 cm^-3. The drain region is of the material GaN with a length of 0.69 micrometers and it is doped with Boron at a concentration of 423381505431985455104 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.38)\n(define Lgl 0.32)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.69)\n(define Ld 0.69)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t209803952415726960640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t387299879631962767360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t386779795704932204544\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t423381505431985455104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.82 micrometers and it is doped with Boron at a concentration of 256876401352302231552 cm^-3. The short gate region is of the material SiGe with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 381655484197664587776 cm^-3. The long gate region is of the material GaN with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 832954077746807832576 cm^-3. The drain region is of the material Silicon with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 280665747974626836480 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.8)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.82)\n(define Ld 0.82)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t256876401352302231552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t381655484197664587776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t832954077746807832576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t280665747974626836480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 291749434826802397184 cm^-3. The short gate region is of the material Diamond with a length of 0.68 micrometers and it is doped with Boron at a concentration of 479059250210639314944 cm^-3. The long gate region is of the material SiGe with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 951863160531347701760 cm^-3. The drain region is of the material SiGe with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 415357531043167076352 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.68)\n(define Lgl 0.52)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.71)\n(define Ld 0.71)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t291749434826802397184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t479059250210639314944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t951863160531347701760\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t415357531043167076352\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.95 micrometers and it is doped with Boron at a concentration of 695686220386580168704 cm^-3. The short gate region is of the material Germanium with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 930851773462634954752 cm^-3. The long gate region is of the material Diamond with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 299146352948787544064 cm^-3. The drain region is of the material Silicon with a length of 0.95 micrometers and it is doped with Boron at a concentration of 302981137888652820480 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.91)\n(define Lgl 0.06)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.95)\n(define Ld 0.95)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t695686220386580168704\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t930851773462634954752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t299146352948787544064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t302981137888652820480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.47 micrometers and it is doped with Boron at a concentration of 345347829257504686080 cm^-3. The short gate region is of the material Germanium with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 338327492104932556800 cm^-3. The long gate region is of the material SiGe with a length of 0.74 micrometers and it is doped with Boron at a concentration of 38382030733245153280 cm^-3. The drain region is of the material SiGe with a length of 0.47 micrometers and it is doped with Boron at a concentration of 341080210407788511232 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.61)\n(define Lgl 0.74)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.47)\n(define Ld 0.47)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t345347829257504686080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t338327492104932556800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t38382030733245153280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t341080210407788511232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.56 micrometers and it is doped with Boron at a concentration of 435864987674607747072 cm^-3. The short gate region is of the material Germanium with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 67057324122991714304 cm^-3. The long gate region is of the material SiGe with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 719041205547809112064 cm^-3. The drain region is of the material Diamond with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 119805192861060071424 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.7)\n(define Lgl 0.28)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.56)\n(define Ld 0.56)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t435864987674607747072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t67057324122991714304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t719041205547809112064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t119805192861060071424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.62 micrometers and it is doped with Boron at a concentration of 68078542352251953152 cm^-3. The short gate region is of the material Germanium with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 756653120627540623360 cm^-3. The long gate region is of the material Germanium with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 981075265952255311872 cm^-3. The drain region is of the material GaN with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 696781511077571198976 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.81)\n(define Lgl 0.29)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t68078542352251953152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t756653120627540623360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t981075265952255311872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t696781511077571198976\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 661731183777182515200 cm^-3. The short gate region is of the material Germanium with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 740029811537153753088 cm^-3. The long gate region is of the material Germanium with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 231416009683427753984 cm^-3. The drain region is of the material SiGe with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 104049224585274736640 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.51)\n(define Lgl 0.87)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.31)\n(define Ld 0.31)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t661731183777182515200\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t740029811537153753088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t231416009683427753984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t104049224585274736640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 329709561918782570496 cm^-3. The short gate region is of the material Diamond with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 808350958252919750656 cm^-3. The long gate region is of the material GaN with a length of 0.02 micrometers and it is doped with Boron at a concentration of 454009691030609592320 cm^-3. The drain region is of the material GaN with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 470099810058149036032 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.53)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t329709561918782570496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t808350958252919750656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t454009691030609592320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t470099810058149036032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.69 micrometers and it is doped with Boron at a concentration of 808958961547366498304 cm^-3. The short gate region is of the material GaN with a length of 0.77 micrometers and it is doped with Boron at a concentration of 986915429465358467072 cm^-3. The long gate region is of the material GaN with a length of 0.1 micrometers and it is doped with Boron at a concentration of 5366336812323866624 cm^-3. The drain region is of the material GaN with a length of 0.69 micrometers and it is doped with Boron at a concentration of 756410475003276689408 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.77)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.69)\n(define Ld 0.69)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t808958961547366498304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t986915429465358467072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t5366336812323866624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t756410475003276689408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.43 micrometers and it is doped with Boron at a concentration of 72954015859456663552 cm^-3. The short gate region is of the material Diamond with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 531880423957740257280 cm^-3. The long gate region is of the material SiGe with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 139113382863257092096 cm^-3. The drain region is of the material GaN with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 343096934236029845504 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.14)\n(define Lgl 0.37)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.43)\n(define Ld 0.43)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t72954015859456663552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t531880423957740257280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t139113382863257092096\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t343096934236029845504\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 734682763951973859328 cm^-3. The short gate region is of the material Diamond with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 420786106589795713024 cm^-3. The long gate region is of the material Germanium with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 893106364067646930944 cm^-3. The drain region is of the material Silicon with a length of 0.88 micrometers and it is doped with Boron at a concentration of 458200464985068797952 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.76)\n(define Lgl 0.9)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.88)\n(define Ld 0.88)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t734682763951973859328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t420786106589795713024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t893106364067646930944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t458200464985068797952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 40817685736438710272 cm^-3. The short gate region is of the material Diamond with a length of 0.39 micrometers and it is doped with Boron at a concentration of 669381818953558392832 cm^-3. The long gate region is of the material Germanium with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 588653002667864227840 cm^-3. The drain region is of the material Germanium with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 34888329156348243968 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.39)\n(define Lgl 0.72)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.07)\n(define Ld 0.07)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t40817685736438710272\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t669381818953558392832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t588653002667864227840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t34888329156348243968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 997526229838317486080 cm^-3. The short gate region is of the material Silicon with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 20169537637887635456 cm^-3. The long gate region is of the material GaN with a length of 0.41 micrometers and it is doped with Boron at a concentration of 410638156269536542720 cm^-3. The drain region is of the material GaN with a length of 0.32 micrometers and it is doped with Boron at a concentration of 613015266740784070656 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.79)\n(define Lgl 0.41)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.32)\n(define Ld 0.32)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t997526229838317486080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t20169537637887635456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t410638156269536542720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t613015266740784070656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 382098832896368836608 cm^-3. The short gate region is of the material SiGe with a length of 0.8 micrometers and it is doped with Boron at a concentration of 644446766945771323392 cm^-3. The long gate region is of the material GaN with a length of 1.0 micrometers and it is doped with Boron at a concentration of 666089472460592775168 cm^-3. The drain region is of the material Germanium with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 270653350101218689024 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.8)\n(define Lgl 1.0)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t382098832896368836608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t644446766945771323392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t666089472460592775168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t270653350101218689024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 785193250393232113664 cm^-3. The short gate region is of the material Diamond with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 821759094132931690496 cm^-3. The long gate region is of the material Diamond with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 959142650507328487424 cm^-3. The drain region is of the material GaN with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 627747092181071298560 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.58)\n(define Lgl 0.52)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t785193250393232113664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t821759094132931690496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t959142650507328487424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t627747092181071298560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.28 micrometers and it is doped with Boron at a concentration of 521681947035383496704 cm^-3. The short gate region is of the material Germanium with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 532247243553632288768 cm^-3. The long gate region is of the material SiGe with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 572710908416574750720 cm^-3. The drain region is of the material GaN with a length of 0.28 micrometers and it is doped with Boron at a concentration of 603829988376127471616 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.82)\n(define Lgl 0.49)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t521681947035383496704\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t532247243553632288768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t572710908416574750720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t603829988376127471616\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.42 micrometers and it is doped with Boron at a concentration of 627586753051423277056 cm^-3. The short gate region is of the material Germanium with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 896537745859576987648 cm^-3. The long gate region is of the material Germanium with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 143089223933203103744 cm^-3. The drain region is of the material Diamond with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 301542467634390892544 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.11)\n(define Lgl 0.23)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.42)\n(define Ld 0.42)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t627586753051423277056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t896537745859576987648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t143089223933203103744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t301542467634390892544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 537060007493940805632 cm^-3. The short gate region is of the material SiGe with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 627898565031575420928 cm^-3. The long gate region is of the material Diamond with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 735069175319916838912 cm^-3. The drain region is of the material Silicon with a length of 0.92 micrometers and it is doped with Boron at a concentration of 802727183841407926272 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.96)\n(define Lgl 0.33)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.92)\n(define Ld 0.92)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t537060007493940805632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t627898565031575420928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t735069175319916838912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t802727183841407926272\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.9 micrometers and it is doped with Boron at a concentration of 269924182845676224512 cm^-3. The short gate region is of the material GaN with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 687151779948286050304 cm^-3. The long gate region is of the material Diamond with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 740649903686328647680 cm^-3. The drain region is of the material Diamond with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 468672350479168831488 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.03)\n(define Lgl 0.14)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t269924182845676224512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t687151779948286050304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t740649903686328647680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t468672350479168831488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 261483057772520636416 cm^-3. The short gate region is of the material Diamond with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 723371467570369134592 cm^-3. The long gate region is of the material SiGe with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 48141556826333986816 cm^-3. The drain region is of the material Germanium with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 714717572219888467968 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.94)\n(define Lgl 0.17)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.09)\n(define Ld 0.09)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t261483057772520636416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t723371467570369134592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t48141556826333986816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t714717572219888467968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 619882545154914385920 cm^-3. The short gate region is of the material Germanium with a length of 0.44 micrometers and it is doped with Boron at a concentration of 561447778841262424064 cm^-3. The long gate region is of the material Germanium with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 361364407957077491712 cm^-3. The drain region is of the material SiGe with a length of 0.62 micrometers and it is doped with Boron at a concentration of 607938133153033224192 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.44)\n(define Lgl 0.52)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t619882545154914385920\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t561447778841262424064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t361364407957077491712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t607938133153033224192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.64 micrometers and it is doped with Boron at a concentration of 687022036619546066944 cm^-3. The short gate region is of the material GaN with a length of 0.59 micrometers and it is doped with Boron at a concentration of 202009069468109078528 cm^-3. The long gate region is of the material Germanium with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 124074030271234359296 cm^-3. The drain region is of the material Diamond with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 641110989374380048384 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.59)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.64)\n(define Ld 0.64)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t687022036619546066944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t202009069468109078528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t124074030271234359296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t641110989374380048384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 426431546550351691776 cm^-3. The short gate region is of the material SiGe with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 418445737137844387840 cm^-3. The long gate region is of the material Diamond with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 459805952677182832640 cm^-3. The drain region is of the material Silicon with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 517035965968324886528 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.77)\n(define Lgl 0.72)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.03)\n(define Ld 0.03)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t426431546550351691776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t418445737137844387840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t459805952677182832640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t517035965968324886528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.06 micrometers and it is doped with Boron at a concentration of 695138229324690227200 cm^-3. The short gate region is of the material Germanium with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 951756730766571995136 cm^-3. The long gate region is of the material Germanium with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 959992113778791022592 cm^-3. The drain region is of the material Diamond with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 478304485233009098752 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.74)\n(define Lgl 0.29)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.06)\n(define Ld 0.06)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t695138229324690227200\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t951756730766571995136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t959992113778791022592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t478304485233009098752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 16079460690605815808 cm^-3. The short gate region is of the material GaN with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 803333146834794708992 cm^-3. The long gate region is of the material SiGe with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 385430918203749433344 cm^-3. The drain region is of the material GaN with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 916724584566543745024 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.79)\n(define Lgl 0.21)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t16079460690605815808\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t803333146834794708992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t385430918203749433344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t916724584566543745024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 790526931599837757440 cm^-3. The short gate region is of the material GaN with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 767313677249727561728 cm^-3. The long gate region is of the material Diamond with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 845851045296698294272 cm^-3. The drain region is of the material Silicon with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 794556131214206697472 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.26)\n(define Lgl 0.01)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.71)\n(define Ld 0.71)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t790526931599837757440\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t767313677249727561728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t845851045296698294272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t794556131214206697472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 203475516809326624768 cm^-3. The short gate region is of the material Diamond with a length of 0.45 micrometers and it is doped with Boron at a concentration of 225926617852883369984 cm^-3. The long gate region is of the material GaN with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 441969948415192727552 cm^-3. The drain region is of the material Germanium with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 890748404878372634624 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.45)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.7)\n(define Ld 0.7)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t203475516809326624768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t225926617852883369984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t441969948415192727552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t890748404878372634624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.83 micrometers and it is doped with Boron at a concentration of 641641807183991144448 cm^-3. The short gate region is of the material Diamond with a length of 0.33 micrometers and it is doped with Boron at a concentration of 192983195805816291328 cm^-3. The long gate region is of the material Diamond with a length of 0.6 micrometers and it is doped with Boron at a concentration of 685755996928457441280 cm^-3. The drain region is of the material GaN with a length of 0.83 micrometers and it is doped with Boron at a concentration of 53122046214541017088 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.33)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.83)\n(define Ld 0.83)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t641641807183991144448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t192983195805816291328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t685755996928457441280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t53122046214541017088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.61 micrometers and it is doped with Boron at a concentration of 155796719108557897728 cm^-3. The short gate region is of the material SiGe with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 9270130149013575680 cm^-3. The long gate region is of the material Diamond with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 180317722106026983424 cm^-3. The drain region is of the material SiGe with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 306933553802560536576 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.84)\n(define Lgl 0.61)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.61)\n(define Ld 0.61)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t155796719108557897728\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t9270130149013575680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t180317722106026983424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t306933553802560536576\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.6 micrometers and it is doped with Boron at a concentration of 232513925992433123328 cm^-3. The short gate region is of the material Diamond with a length of 0.37 micrometers and it is doped with Arsenic at a concentration of 157293049052911763456 cm^-3. The long gate region is of the material Germanium with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 334339978348058378240 cm^-3. The drain region is of the material Diamond with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 820062390819419324416 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.37)\n(define Lgl 0.06)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.6)\n(define Ld 0.6)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t232513925992433123328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t157293049052911763456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t334339978348058378240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t820062390819419324416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 643765243034398752768 cm^-3. The short gate region is of the material GaN with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 696517647141324849152 cm^-3. The long gate region is of the material Silicon with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 856139587711049924608 cm^-3. The drain region is of the material GaN with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 9216732536577676288 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.27)\n(define Lgl 0.68)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.43)\n(define Ld 0.43)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t643765243034398752768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t696517647141324849152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t856139587711049924608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t9216732536577676288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 41775347834427801600 cm^-3. The short gate region is of the material GaN with a length of 0.1 micrometers and it is doped with Boron at a concentration of 740478072442041663488 cm^-3. The long gate region is of the material Silicon with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 67359693487154896896 cm^-3. The drain region is of the material Diamond with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 531227587015789903872 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.1)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t41775347834427801600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t740478072442041663488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t67359693487154896896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t531227587015789903872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 384344991394895626240 cm^-3. The short gate region is of the material SiGe with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 831480624924040101888 cm^-3. The long gate region is of the material GaN with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 517148440247043883008 cm^-3. The drain region is of the material Germanium with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 50767063773143293952 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.89)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.1)\n(define Ld 0.1)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t384344991394895626240\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t831480624924040101888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t517148440247043883008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t50767063773143293952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.72 micrometers and it is doped with Boron at a concentration of 340916593335083204608 cm^-3. The short gate region is of the material SiGe with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 575858271244390236160 cm^-3. The long gate region is of the material SiGe with a length of 0.83 micrometers and it is doped with Boron at a concentration of 801073667155343966208 cm^-3. The drain region is of the material Germanium with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 414552731976262221824 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.11)\n(define Lgl 0.83)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.72)\n(define Ld 0.72)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t340916593335083204608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t575858271244390236160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t801073667155343966208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t414552731976262221824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.47 micrometers and it is doped with Boron at a concentration of 303786111284052492288 cm^-3. The short gate region is of the material SiGe with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 304102575319774396416 cm^-3. The long gate region is of the material Silicon with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 983907761942877831168 cm^-3. The drain region is of the material SiGe with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 885402176522384572416 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.36)\n(define Lgl 0.78)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.47)\n(define Ld 0.47)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t303786111284052492288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t304102575319774396416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t983907761942877831168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t885402176522384572416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.92 micrometers and it is doped with Boron at a concentration of 838118281980814819328 cm^-3. The short gate region is of the material Silicon with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 874766273357691748352 cm^-3. The long gate region is of the material Germanium with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 320330066245499355136 cm^-3. The drain region is of the material Diamond with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 65322317798657982464 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.3)\n(define Lgl 0.88)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.92)\n(define Ld 0.92)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t838118281980814819328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t874766273357691748352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t320330066245499355136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t65322317798657982464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 31975625207990956032 cm^-3. The short gate region is of the material GaN with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 176608580810587602944 cm^-3. The long gate region is of the material SiGe with a length of 0.76 micrometers and it is doped with Boron at a concentration of 721759064039855882240 cm^-3. The drain region is of the material Diamond with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 533229730953140109312 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.36)\n(define Lgl 0.76)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.11)\n(define Ld 0.11)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t31975625207990956032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t176608580810587602944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t721759064039855882240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t533229730953140109312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.33 micrometers and it is doped with Boron at a concentration of 916073061413631426560 cm^-3. The short gate region is of the material GaN with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 989411676799616417792 cm^-3. The long gate region is of the material GaN with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 892638830805052293120 cm^-3. The drain region is of the material Germanium with a length of 0.33 micrometers and it is doped with Boron at a concentration of 355816495017807183872 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.86)\n(define Lgl 0.41)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t916073061413631426560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t989411676799616417792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t892638830805052293120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t355816495017807183872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.57 micrometers and it is doped with Boron at a concentration of 284567769135044198400 cm^-3. The short gate region is of the material Diamond with a length of 0.28 micrometers and it is doped with Boron at a concentration of 102440574923215142912 cm^-3. The long gate region is of the material SiGe with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 374929288138017734656 cm^-3. The drain region is of the material SiGe with a length of 0.57 micrometers and it is doped with Boron at a concentration of 148803829450985897984 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.28)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.57)\n(define Ld 0.57)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t284567769135044198400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t102440574923215142912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t374929288138017734656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t148803829450985897984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 592202280594259312640 cm^-3. The short gate region is of the material Diamond with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 628793314500493049856 cm^-3. The long gate region is of the material Silicon with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 830775496790614212608 cm^-3. The drain region is of the material GaN with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 838558258348238962688 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.91)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.61)\n(define Ld 0.61)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t592202280594259312640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t628793314500493049856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t830775496790614212608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t838558258348238962688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 273314350821673140224 cm^-3. The short gate region is of the material Germanium with a length of 0.86 micrometers and it is doped with Boron at a concentration of 271408635619702177792 cm^-3. The long gate region is of the material Silicon with a length of 0.41 micrometers and it is doped with Boron at a concentration of 684270836724444561408 cm^-3. The drain region is of the material Silicon with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 961711688598564241408 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.86)\n(define Lgl 0.41)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t273314350821673140224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t271408635619702177792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t684270836724444561408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t961711688598564241408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 239667309667242180608 cm^-3. The short gate region is of the material Germanium with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 302941201942698524672 cm^-3. The long gate region is of the material Silicon with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 573375452705352581120 cm^-3. The drain region is of the material SiGe with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 998769455681628143616 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.41)\n(define Lgl 0.95)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.74)\n(define Ld 0.74)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t239667309667242180608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t302941201942698524672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t573375452705352581120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t998769455681628143616\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.39 micrometers and it is doped with Boron at a concentration of 819492952555278827520 cm^-3. The short gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 393761385281957265408 cm^-3. The long gate region is of the material Diamond with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 549795332967334936576 cm^-3. The drain region is of the material Silicon with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 446746977581096239104 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.34)\n(define Lgl 0.09)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.39)\n(define Ld 0.39)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t819492952555278827520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t393761385281957265408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t549795332967334936576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t446746977581096239104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.79 micrometers and it is doped with Boron at a concentration of 191990723673518374912 cm^-3. The short gate region is of the material Silicon with a length of 0.45 micrometers and it is doped with Boron at a concentration of 217137510679176183808 cm^-3. The long gate region is of the material Diamond with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 850961426813363683328 cm^-3. The drain region is of the material GaN with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 770217465423173517312 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.45)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.79)\n(define Ld 0.79)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t191990723673518374912\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t217137510679176183808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t850961426813363683328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t770217465423173517312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 69787485933618282496 cm^-3. The short gate region is of the material Silicon with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 894611874839515889664 cm^-3. The long gate region is of the material Diamond with a length of 0.63 micrometers and it is doped with Boron at a concentration of 393681358357299068928 cm^-3. The drain region is of the material SiGe with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 87776078163728744448 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.96)\n(define Lgl 0.63)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.01)\n(define Ld 0.01)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t69787485933618282496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t894611874839515889664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t393681358357299068928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t87776078163728744448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 536421677032282259456 cm^-3. The short gate region is of the material GaN with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 884764710746421854208 cm^-3. The long gate region is of the material Diamond with a length of 0.17 micrometers and it is doped with Boron at a concentration of 493730515343411642368 cm^-3. The drain region is of the material SiGe with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 91157812532805058560 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.57)\n(define Lgl 0.17)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t536421677032282259456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t884764710746421854208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t493730515343411642368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t91157812532805058560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 391140092031801229312 cm^-3. The short gate region is of the material Silicon with a length of 0.73 micrometers and it is doped with Boron at a concentration of 307319188220212805632 cm^-3. The long gate region is of the material Silicon with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 63767727259494326272 cm^-3. The drain region is of the material SiGe with a length of 0.44 micrometers and it is doped with Boron at a concentration of 431997262700135710720 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.73)\n(define Lgl 0.73)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.44)\n(define Ld 0.44)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t391140092031801229312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t307319188220212805632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t63767727259494326272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t431997262700135710720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 525446299481715900416 cm^-3. The short gate region is of the material SiGe with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 458285233494524559360 cm^-3. The long gate region is of the material GaN with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 63052917814880501760 cm^-3. The drain region is of the material GaN with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 867084390363932786688 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.55)\n(define Lgl 0.19)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.92)\n(define Ld 0.92)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t525446299481715900416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t458285233494524559360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t63052917814880501760\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t867084390363932786688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 503543472902729760768 cm^-3. The short gate region is of the material Diamond with a length of 0.07 micrometers and it is doped with Boron at a concentration of 83087865489244897280 cm^-3. The long gate region is of the material Diamond with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 195686613519430942720 cm^-3. The drain region is of the material SiGe with a length of 0.34 micrometers and it is doped with Boron at a concentration of 926665441698712780800 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.07)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.34)\n(define Ld 0.34)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t503543472902729760768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t83087865489244897280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t195686613519430942720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t926665441698712780800\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 207257247904539508736 cm^-3. The short gate region is of the material Silicon with a length of 0.63 micrometers and it is doped with Boron at a concentration of 835801504192884637696 cm^-3. The long gate region is of the material SiGe with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 199764769321256222720 cm^-3. The drain region is of the material GaN with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 80892639945351135232 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.63)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.95)\n(define Ld 0.95)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t207257247904539508736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t835801504192884637696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t199764769321256222720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t80892639945351135232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 973475568133968363520 cm^-3. The short gate region is of the material SiGe with a length of 0.94 micrometers and it is doped with Boron at a concentration of 548674536944764977152 cm^-3. The long gate region is of the material Silicon with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 791671997028861739008 cm^-3. The drain region is of the material Germanium with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 588401737928964308992 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.94)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.81)\n(define Ld 0.81)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t973475568133968363520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t548674536944764977152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t791671997028861739008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t588401737928964308992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 647323709021487628288 cm^-3. The short gate region is of the material Diamond with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 204445859324593340416 cm^-3. The long gate region is of the material GaN with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 69802875791405252608 cm^-3. The drain region is of the material Silicon with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 301087712000138674176 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.51)\n(define Lgl 0.23)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.01)\n(define Ld 0.01)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t647323709021487628288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t204445859324593340416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t69802875791405252608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t301087712000138674176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.46 micrometers and it is doped with Boron at a concentration of 172159869983254806528 cm^-3. The short gate region is of the material Silicon with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 196970124792766726144 cm^-3. The long gate region is of the material Silicon with a length of 0.59 micrometers and it is doped with Boron at a concentration of 196087020762039255040 cm^-3. The drain region is of the material Silicon with a length of 0.46 micrometers and it is doped with Boron at a concentration of 244675204053461598208 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.29)\n(define Lgl 0.59)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t172159869983254806528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t196970124792766726144\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t196087020762039255040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t244675204053461598208\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 122729826027815239680 cm^-3. The short gate region is of the material Silicon with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 458116524120086806528 cm^-3. The long gate region is of the material Diamond with a length of 0.28 micrometers and it is doped with Boron at a concentration of 573902701442062745600 cm^-3. The drain region is of the material Silicon with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 140379189854746542080 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.97)\n(define Lgl 0.28)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.82)\n(define Ld 0.82)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t122729826027815239680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t458116524120086806528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t573902701442062745600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t140379189854746542080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.55 micrometers and it is doped with Boron at a concentration of 90968175527593934848 cm^-3. The short gate region is of the material Silicon with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 957161507185371512832 cm^-3. The long gate region is of the material SiGe with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 49271473576332664832 cm^-3. The drain region is of the material Germanium with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 270916683359131598848 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.5)\n(define Lgl 0.79)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.55)\n(define Ld 0.55)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t90968175527593934848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t957161507185371512832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t49271473576332664832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t270916683359131598848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 610645624940521586688 cm^-3. The short gate region is of the material Silicon with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 778982613823945441280 cm^-3. The long gate region is of the material Diamond with a length of 0.8 micrometers and it is doped with Boron at a concentration of 897731554139123744768 cm^-3. The drain region is of the material Germanium with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 257180038423234117632 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.99)\n(define Lgl 0.8)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.05)\n(define Ld 0.05)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t610645624940521586688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t778982613823945441280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t897731554139123744768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t257180038423234117632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.61 micrometers and it is doped with Boron at a concentration of 552959343150167621632 cm^-3. The short gate region is of the material GaN with a length of 0.87 micrometers and it is doped with Boron at a concentration of 172239530321422090240 cm^-3. The long gate region is of the material Diamond with a length of 0.83 micrometers and it is doped with Boron at a concentration of 605779224001532395520 cm^-3. The drain region is of the material Germanium with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 721534850589030350848 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.87)\n(define Lgl 0.83)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.61)\n(define Ld 0.61)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t552959343150167621632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t172239530321422090240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t605779224001532395520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t721534850589030350848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 87754824229865816064 cm^-3. The short gate region is of the material Silicon with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 362359531763742277632 cm^-3. The long gate region is of the material Germanium with a length of 0.42 micrometers and it is doped with Boron at a concentration of 509907699388949856256 cm^-3. The drain region is of the material GaN with a length of 0.88 micrometers and it is doped with Boron at a concentration of 645813790075214364672 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.76)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.88)\n(define Ld 0.88)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t87754824229865816064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t362359531763742277632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t509907699388949856256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t645813790075214364672\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 206468946236460367872 cm^-3. The short gate region is of the material Diamond with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 818019499567964880896 cm^-3. The long gate region is of the material Germanium with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 853689713518421606400 cm^-3. The drain region is of the material Diamond with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 773129058762997497856 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.53)\n(define Lgl 0.24)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t206468946236460367872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t818019499567964880896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t853689713518421606400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t773129058762997497856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.36 micrometers and it is doped with Phosphorus at a concentration of 764613943623136313344 cm^-3. The short gate region is of the material GaN with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 516548232913481105408 cm^-3. The long gate region is of the material GaN with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 707695948435136184320 cm^-3. The drain region is of the material Germanium with a length of 0.36 micrometers and it is doped with Phosphorus at a concentration of 599511457077703344128 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.27)\n(define Lgl 0.81)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.36)\n(define Ld 0.36)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t764613943623136313344\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t516548232913481105408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t707695948435136184320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t599511457077703344128\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 480019444398714257408 cm^-3. The short gate region is of the material Silicon with a length of 0.29 micrometers and it is doped with Boron at a concentration of 965403531968937066496 cm^-3. The long gate region is of the material Germanium with a length of 0.56 micrometers and it is doped with Boron at a concentration of 602001123929940819968 cm^-3. The drain region is of the material Silicon with a length of 0.25 micrometers and it is doped with Boron at a concentration of 678600450345128427520 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.29)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.25)\n(define Ld 0.25)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t480019444398714257408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t965403531968937066496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t602001123929940819968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t678600450345128427520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 147449753306597572608 cm^-3. The short gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 228412571316135854080 cm^-3. The long gate region is of the material Germanium with a length of 0.47 micrometers and it is doped with Boron at a concentration of 391110402760883961856 cm^-3. The drain region is of the material Germanium with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 299434195168419250176 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.34)\n(define Lgl 0.47)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.16)\n(define Ld 0.16)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t147449753306597572608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t228412571316135854080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t391110402760883961856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t299434195168419250176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 987613411884229066752 cm^-3. The short gate region is of the material SiGe with a length of 0.61 micrometers and it is doped with Boron at a concentration of 838959396048662691840 cm^-3. The long gate region is of the material Diamond with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 704427749811573227520 cm^-3. The drain region is of the material Silicon with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 397286500461649985536 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.61)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.51)\n(define Ld 0.51)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t987613411884229066752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t838959396048662691840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t704427749811573227520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t397286500461649985536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.24 micrometers and it is doped with Boron at a concentration of 6955947777347722240 cm^-3. The short gate region is of the material Silicon with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 202091063478026895360 cm^-3. The long gate region is of the material Silicon with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 490604936846819459072 cm^-3. The drain region is of the material GaN with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 906731741849776029696 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.79)\n(define Lgl 0.79)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.24)\n(define Ld 0.24)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t6955947777347722240\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t202091063478026895360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t490604936846819459072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t906731741849776029696\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 522443331000018403328 cm^-3. The short gate region is of the material Diamond with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 979585616519011893248 cm^-3. The long gate region is of the material Silicon with a length of 0.11 micrometers and it is doped with Boron at a concentration of 45631192614397837312 cm^-3. The drain region is of the material GaN with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 533152117596230778880 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.91)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t522443331000018403328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t979585616519011893248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t45631192614397837312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t533152117596230778880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 84665745842843090944 cm^-3. The short gate region is of the material SiGe with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 578469745942803906560 cm^-3. The long gate region is of the material GaN with a length of 0.06 micrometers and it is doped with Boron at a concentration of 858187700601739673600 cm^-3. The drain region is of the material Silicon with a length of 0.4 micrometers and it is doped with Boron at a concentration of 317384275993553534976 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.91)\n(define Lgl 0.06)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t84665745842843090944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t578469745942803906560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t858187700601739673600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t317384275993553534976\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 730128574877245374464 cm^-3. The short gate region is of the material GaN with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 558963050406651756544 cm^-3. The long gate region is of the material SiGe with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 160593255190833233920 cm^-3. The drain region is of the material Diamond with a length of 0.22 micrometers and it is doped with Boron at a concentration of 836728951178940776448 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.68)\n(define Lgl 0.04)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.22)\n(define Ld 0.22)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t730128574877245374464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t558963050406651756544\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t160593255190833233920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t836728951178940776448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 20140225021621575680 cm^-3. The short gate region is of the material SiGe with a length of 0.8 micrometers and it is doped with Boron at a concentration of 842321590224534765568 cm^-3. The long gate region is of the material GaN with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 344094939958735929344 cm^-3. The drain region is of the material SiGe with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 259950808468386381824 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.8)\n(define Lgl 0.19)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.95)\n(define Ld 0.95)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t20140225021621575680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t842321590224534765568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t344094939958735929344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t259950808468386381824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.79 micrometers and it is doped with Boron at a concentration of 584496349793181630464 cm^-3. The short gate region is of the material Silicon with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 535318363847825948672 cm^-3. The long gate region is of the material Germanium with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 221713861965335920640 cm^-3. The drain region is of the material SiGe with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 359056451059853950976 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.92)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.79)\n(define Ld 0.79)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t584496349793181630464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t535318363847825948672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t221713861965335920640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t359056451059853950976\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 98998175382721789952 cm^-3. The short gate region is of the material SiGe with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 483018829255664599040 cm^-3. The long gate region is of the material GaN with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 78388412679200227328 cm^-3. The drain region is of the material Germanium with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 424612917034674421760 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.43)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.24)\n(define Ld 0.24)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t98998175382721789952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t483018829255664599040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t78388412679200227328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t424612917034674421760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.25 micrometers and it is doped with Boron at a concentration of 376863902469917769728 cm^-3. The short gate region is of the material Germanium with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 409266740515140796416 cm^-3. The long gate region is of the material SiGe with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 875359369274085867520 cm^-3. The drain region is of the material Diamond with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 136923060386876424192 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.24)\n(define Lgl 0.44)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.25)\n(define Ld 0.25)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t376863902469917769728\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t409266740515140796416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t875359369274085867520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t136923060386876424192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 172923747534665711616 cm^-3. The short gate region is of the material Silicon with a length of 0.35 micrometers and it is doped with Boron at a concentration of 31837413431179923456 cm^-3. The long gate region is of the material Germanium with a length of 0.38 micrometers and it is doped with Boron at a concentration of 917477262277660114944 cm^-3. The drain region is of the material Germanium with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 965838308940379324416 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.35)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.67)\n(define Ld 0.67)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t172923747534665711616\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t31837413431179923456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t917477262277660114944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t965838308940379324416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.09 micrometers and it is doped with Boron at a concentration of 349115616458892247040 cm^-3. The short gate region is of the material GaN with a length of 0.67 micrometers and it is doped with Boron at a concentration of 652900391645173514240 cm^-3. The long gate region is of the material Diamond with a length of 0.73 micrometers and it is doped with Boron at a concentration of 81705165080134926336 cm^-3. The drain region is of the material Germanium with a length of 0.09 micrometers and it is doped with Boron at a concentration of 647237550072985288704 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.67)\n(define Lgl 0.73)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.09)\n(define Ld 0.09)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t349115616458892247040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t652900391645173514240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t81705165080134926336\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t647237550072985288704\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.05 micrometers and it is doped with Boron at a concentration of 750717535096861491200 cm^-3. The short gate region is of the material SiGe with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 829991411100973137920 cm^-3. The long gate region is of the material Germanium with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 956245684241252352000 cm^-3. The drain region is of the material SiGe with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 562001418419044483072 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.7)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.05)\n(define Ld 0.05)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t750717535096861491200\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t829991411100973137920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t956245684241252352000\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t562001418419044483072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 30573482219385974784 cm^-3. The short gate region is of the material GaN with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 544853323181292388352 cm^-3. The long gate region is of the material Germanium with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 149972878217116155904 cm^-3. The drain region is of the material Germanium with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 183883196873384263680 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.21)\n(define Lgl 0.19)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.29)\n(define Ld 0.29)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t30573482219385974784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t544853323181292388352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t149972878217116155904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t183883196873384263680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.06 micrometers and it is doped with Boron at a concentration of 441294575849981476864 cm^-3. The short gate region is of the material Silicon with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 937736855307852185600 cm^-3. The long gate region is of the material Silicon with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 393180695036316876800 cm^-3. The drain region is of the material GaN with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 568247691513409437696 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.46)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.06)\n(define Ld 0.06)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t441294575849981476864\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t937736855307852185600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t393180695036316876800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t568247691513409437696\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 338861853263306424320 cm^-3. The short gate region is of the material Diamond with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 556826225077355544576 cm^-3. The long gate region is of the material Germanium with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 386781623226291978240 cm^-3. The drain region is of the material Silicon with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 973297756063124946944 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.81)\n(define Lgl 0.05)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.31)\n(define Ld 0.31)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t338861853263306424320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t556826225077355544576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t386781623226291978240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t973297756063124946944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 498662505437464100864 cm^-3. The short gate region is of the material Silicon with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 832265390830331494400 cm^-3. The long gate region is of the material Diamond with a length of 0.55 micrometers and it is doped with Boron at a concentration of 899862219938127282176 cm^-3. The drain region is of the material Germanium with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 341388210242885517312 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.09)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t498662505437464100864\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t832265390830331494400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t899862219938127282176\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t341388210242885517312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.59 micrometers and it is doped with Boron at a concentration of 439343240058201178112 cm^-3. The short gate region is of the material SiGe with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 869942703376934895616 cm^-3. The long gate region is of the material GaN with a length of 0.66 micrometers and it is doped with Boron at a concentration of 948527826798227750912 cm^-3. The drain region is of the material Diamond with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 442727097689416138752 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.87)\n(define Lgl 0.66)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t439343240058201178112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t869942703376934895616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t948527826798227750912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t442727097689416138752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 766997079751568916480 cm^-3. The short gate region is of the material Silicon with a length of 0.67 micrometers and it is doped with Boron at a concentration of 236401203637902245888 cm^-3. The long gate region is of the material SiGe with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 371263947862286794752 cm^-3. The drain region is of the material Germanium with a length of 0.96 micrometers and it is doped with Boron at a concentration of 747672941249829928960 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.67)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t766997079751568916480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t236401203637902245888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t371263947862286794752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t747672941249829928960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 170284578601549398016 cm^-3. The short gate region is of the material Silicon with a length of 0.93 micrometers and it is doped with Boron at a concentration of 449686818982359072768 cm^-3. The long gate region is of the material SiGe with a length of 0.19 micrometers and it is doped with Boron at a concentration of 492880658583155376128 cm^-3. The drain region is of the material Germanium with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 845079062245553864704 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.93)\n(define Lgl 0.19)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.06)\n(define Ld 0.06)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t170284578601549398016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t449686818982359072768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t492880658583155376128\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t845079062245553864704\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 836702338594217525248 cm^-3. The short gate region is of the material Germanium with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 487535747324822683648 cm^-3. The long gate region is of the material Diamond with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 765862481297903714304 cm^-3. The drain region is of the material Silicon with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 280900438843299135488 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.58)\n(define Lgl 0.34)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t836702338594217525248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t487535747324822683648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t765862481297903714304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t280900438843299135488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 520983702509594738688 cm^-3. The short gate region is of the material Germanium with a length of 0.25 micrometers and it is doped with Boron at a concentration of 292144299048600731648 cm^-3. The long gate region is of the material Silicon with a length of 0.32 micrometers and it is doped with Boron at a concentration of 740909226272431931392 cm^-3. The drain region is of the material Diamond with a length of 0.88 micrometers and it is doped with Boron at a concentration of 533537452183081844736 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.25)\n(define Lgl 0.32)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.88)\n(define Ld 0.88)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t520983702509594738688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t292144299048600731648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t740909226272431931392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t533537452183081844736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 532555685822369234944 cm^-3. The short gate region is of the material Diamond with a length of 0.42 micrometers and it is doped with Boron at a concentration of 844354942859551440896 cm^-3. The long gate region is of the material Diamond with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 927660887806936612864 cm^-3. The drain region is of the material Diamond with a length of 0.93 micrometers and it is doped with Boron at a concentration of 982651968669146546176 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.42)\n(define Lgl 0.74)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.93)\n(define Ld 0.93)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t532555685822369234944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t844354942859551440896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t927660887806936612864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t982651968669146546176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.22 micrometers and it is doped with Boron at a concentration of 172460805882111819776 cm^-3. The short gate region is of the material SiGe with a length of 0.5 micrometers and it is doped with Boron at a concentration of 161203456197803343872 cm^-3. The long gate region is of the material GaN with a length of 0.6 micrometers and it is doped with Boron at a concentration of 226859077550346207232 cm^-3. The drain region is of the material Germanium with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 742729331009870626816 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.5)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.22)\n(define Ld 0.22)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t172460805882111819776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t161203456197803343872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t226859077550346207232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t742729331009870626816\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.17 micrometers and it is doped with Boron at a concentration of 158192050137234145280 cm^-3. The short gate region is of the material Germanium with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 336410355878515965952 cm^-3. The long gate region is of the material Silicon with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 352600518877073637376 cm^-3. The drain region is of the material GaN with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 213368067419735949312 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.94)\n(define Lgl 0.22)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.17)\n(define Ld 0.17)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t158192050137234145280\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t336410355878515965952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t352600518877073637376\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t213368067419735949312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.62 micrometers and it is doped with Boron at a concentration of 737153704026389479424 cm^-3. The short gate region is of the material Diamond with a length of 0.66 micrometers and it is doped with Boron at a concentration of 859468983500083167232 cm^-3. The long gate region is of the material Germanium with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 59211109948676866048 cm^-3. The drain region is of the material Germanium with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 671275041855990923264 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.66)\n(define Lgl 0.08)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t737153704026389479424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t859468983500083167232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t59211109948676866048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t671275041855990923264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 1.0 micrometers and it is doped with Arsenic at a concentration of 288599237255280001024 cm^-3. The short gate region is of the material Silicon with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 930129397740638044160 cm^-3. The long gate region is of the material Silicon with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 233648805014917709824 cm^-3. The drain region is of the material SiGe with a length of 1.0 micrometers and it is doped with Arsenic at a concentration of 499505649244797927424 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.49)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 1.0)\n(define Ld 1.0)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t288599237255280001024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t930129397740638044160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t233648805014917709824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t499505649244797927424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.54 micrometers and it is doped with Boron at a concentration of 796489622383655780352 cm^-3. The short gate region is of the material Diamond with a length of 0.79 micrometers and it is doped with Boron at a concentration of 4609279520752337408 cm^-3. The long gate region is of the material GaN with a length of 0.55 micrometers and it is doped with Boron at a concentration of 849988237720013897728 cm^-3. The drain region is of the material Diamond with a length of 0.54 micrometers and it is doped with Phosphorus at a concentration of 916607303937205338112 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.79)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.54)\n(define Ld 0.54)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t796489622383655780352\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t4609279520752337408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t849988237720013897728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t916607303937205338112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 858045662827192778752 cm^-3. The short gate region is of the material Diamond with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 253538392363495030784 cm^-3. The long gate region is of the material Silicon with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 858598007155454509056 cm^-3. The drain region is of the material SiGe with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 609766950966596075520 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.85)\n(define Lgl 0.51)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.48)\n(define Ld 0.48)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t858045662827192778752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t253538392363495030784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t858598007155454509056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t609766950966596075520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 939379702726894157824 cm^-3. The short gate region is of the material SiGe with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 968823346706693619712 cm^-3. The long gate region is of the material Silicon with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 637478340363249516544 cm^-3. The drain region is of the material GaN with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 414686121089058865152 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.1)\n(define Lgl 0.95)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.68)\n(define Ld 0.68)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t939379702726894157824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t968823346706693619712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t637478340363249516544\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t414686121089058865152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 911207538457867190272 cm^-3. The short gate region is of the material Silicon with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 886269534698117005312 cm^-3. The long gate region is of the material Silicon with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 667443956661573648384 cm^-3. The drain region is of the material Germanium with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 76851021906570510336 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.49)\n(define Lgl 0.43)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.69)\n(define Ld 0.69)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t911207538457867190272\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t886269534698117005312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t667443956661573648384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t76851021906570510336\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.31 micrometers and it is doped with Boron at a concentration of 886452148628839596032 cm^-3. The short gate region is of the material GaN with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 747681912636810461184 cm^-3. The long gate region is of the material GaN with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 704800768604184772608 cm^-3. The drain region is of the material Silicon with a length of 0.31 micrometers and it is doped with Boron at a concentration of 284302335290807582720 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.14)\n(define Lgl 0.47)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.31)\n(define Ld 0.31)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t886452148628839596032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t747681912636810461184\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t704800768604184772608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t284302335290807582720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 290123431424313229312 cm^-3. The short gate region is of the material Germanium with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 938116597676249579520 cm^-3. The long gate region is of the material GaN with a length of 0.87 micrometers and it is doped with Boron at a concentration of 812645121320951349248 cm^-3. The drain region is of the material Diamond with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 192669487646139351040 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.95)\n(define Lgl 0.87)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.5)\n(define Ld 0.5)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t290123431424313229312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t938116597676249579520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t812645121320951349248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t192669487646139351040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 40406069116145344512 cm^-3. The short gate region is of the material SiGe with a length of 0.12 micrometers and it is doped with Arsenic at a concentration of 435200506704319873024 cm^-3. The long gate region is of the material Silicon with a length of 0.83 micrometers and it is doped with Boron at a concentration of 92170024947052593152 cm^-3. The drain region is of the material Diamond with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 300558977300726153216 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.12)\n(define Lgl 0.83)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.38)\n(define Ld 0.38)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t40406069116145344512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t435200506704319873024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t92170024947052593152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t300558977300726153216\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 549556766261314453504 cm^-3. The short gate region is of the material SiGe with a length of 0.77 micrometers and it is doped with Boron at a concentration of 230621225302403809280 cm^-3. The long gate region is of the material GaN with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 219013298736861380608 cm^-3. The drain region is of the material Diamond with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 761393796196822155264 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.77)\n(define Lgl 0.78)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.76)\n(define Ld 0.76)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t549556766261314453504\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t230621225302403809280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t219013298736861380608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t761393796196822155264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 238910290313281830912 cm^-3. The short gate region is of the material Silicon with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 431248426788648255488 cm^-3. The long gate region is of the material Silicon with a length of 0.38 micrometers and it is doped with Boron at a concentration of 221762099201480818688 cm^-3. The drain region is of the material SiGe with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 218597404359695269888 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.19)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.32)\n(define Ld 0.32)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t238910290313281830912\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t431248426788648255488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t221762099201480818688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t218597404359695269888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 642448704535963238400 cm^-3. The short gate region is of the material GaN with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 626568832564585955328 cm^-3. The long gate region is of the material SiGe with a length of 0.56 micrometers and it is doped with Boron at a concentration of 571918923113716776960 cm^-3. The drain region is of the material Diamond with a length of 0.1 micrometers and it is doped with Boron at a concentration of 800944887449633554432 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.36)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.1)\n(define Ld 0.1)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t642448704535963238400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t626568832564585955328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t571918923113716776960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t800944887449633554432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.71 micrometers and it is doped with Boron at a concentration of 239218922882916515840 cm^-3. The short gate region is of the material GaN with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 829413785174770450432 cm^-3. The long gate region is of the material GaN with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 748639575941444665344 cm^-3. The drain region is of the material Germanium with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 462750330112290979840 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.29)\n(define Lgl 0.46)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.71)\n(define Ld 0.71)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t239218922882916515840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t829413785174770450432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t748639575941444665344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t462750330112290979840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.21 micrometers and it is doped with Boron at a concentration of 767158750242921250816 cm^-3. The short gate region is of the material Germanium with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 63483391159027302400 cm^-3. The long gate region is of the material SiGe with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 669790876054357147648 cm^-3. The drain region is of the material GaN with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 268818959904831766528 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.24)\n(define Lgl 0.7)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t767158750242921250816\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t63483391159027302400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t669790876054357147648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t268818959904831766528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 931030216669913022464 cm^-3. The short gate region is of the material SiGe with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 183412526251492769792 cm^-3. The long gate region is of the material SiGe with a length of 0.64 micrometers and it is doped with Boron at a concentration of 405789410939014086656 cm^-3. The drain region is of the material GaN with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 999348534779088732160 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.73)\n(define Lgl 0.64)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.11)\n(define Ld 0.11)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t931030216669913022464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t183412526251492769792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t405789410939014086656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t999348534779088732160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 324828741378216951808 cm^-3. The short gate region is of the material Diamond with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 953282117892847304704 cm^-3. The long gate region is of the material Diamond with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 852514114700690718720 cm^-3. The drain region is of the material Silicon with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 176411687476405338112 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.52)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t324828741378216951808\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t953282117892847304704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t852514114700690718720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t176411687476405338112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 999519302978102362112 cm^-3. The short gate region is of the material Silicon with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 423783044970204102656 cm^-3. The long gate region is of the material Diamond with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 62022549793427922944 cm^-3. The drain region is of the material Germanium with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 293888395302926614528 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.88)\n(define Lgl 0.89)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.08)\n(define Ld 0.08)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t999519302978102362112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t423783044970204102656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t62022549793427922944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t293888395302926614528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 126461931625589456896 cm^-3. The short gate region is of the material Germanium with a length of 0.51 micrometers and it is doped with Boron at a concentration of 166616112498428674048 cm^-3. The long gate region is of the material Diamond with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 104320804751406759936 cm^-3. The drain region is of the material SiGe with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 879897440575057035264 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.51)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.34)\n(define Ld 0.34)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t126461931625589456896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t166616112498428674048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t104320804751406759936\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t879897440575057035264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.07 micrometers and it is doped with Boron at a concentration of 300453197199205335040 cm^-3. The short gate region is of the material Germanium with a length of 0.57 micrometers and it is doped with Boron at a concentration of 241098057924216881152 cm^-3. The long gate region is of the material Diamond with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 133053071826317443072 cm^-3. The drain region is of the material Silicon with a length of 0.07 micrometers and it is doped with Boron at a concentration of 365361209834170089472 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.57)\n(define Lgl 0.49)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.07)\n(define Ld 0.07)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t300453197199205335040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t241098057924216881152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t133053071826317443072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t365361209834170089472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 962542134852487086080 cm^-3. The short gate region is of the material SiGe with a length of 0.29 micrometers and it is doped with Boron at a concentration of 891547533920496386048 cm^-3. The long gate region is of the material Silicon with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 121998544718046724096 cm^-3. The drain region is of the material GaN with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 7102077270716864512 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.29)\n(define Lgl 0.03)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t962542134852487086080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t891547533920496386048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t121998544718046724096\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t7102077270716864512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 558716791714202124288 cm^-3. The short gate region is of the material Germanium with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 23002281235548856320 cm^-3. The long gate region is of the material SiGe with a length of 0.12 micrometers and it is doped with Arsenic at a concentration of 80371263965685628928 cm^-3. The drain region is of the material Diamond with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 902851907343187574784 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.31)\n(define Lgl 0.12)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t558716791714202124288\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t23002281235548856320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t80371263965685628928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t902851907343187574784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 225794302107472723968 cm^-3. The short gate region is of the material Diamond with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 951420903890372526080 cm^-3. The long gate region is of the material Diamond with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 741898141681081384960 cm^-3. The drain region is of the material Silicon with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 431056326294964273152 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.87)\n(define Lgl 0.61)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.02)\n(define Ld 0.02)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t225794302107472723968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t951420903890372526080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t741898141681081384960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t431056326294964273152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.9 micrometers and it is doped with Boron at a concentration of 279396959521257619456 cm^-3. The short gate region is of the material GaN with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 828310960121746161664 cm^-3. The long gate region is of the material SiGe with a length of 0.34 micrometers and it is doped with Boron at a concentration of 299485972839097696256 cm^-3. The drain region is of the material Diamond with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 840154452587385716736 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.07)\n(define Lgl 0.34)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t279396959521257619456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t828310960121746161664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t299485972839097696256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t840154452587385716736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.34 micrometers and it is doped with Boron at a concentration of 992000228317366583296 cm^-3. The short gate region is of the material Germanium with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 114649503128972951552 cm^-3. The long gate region is of the material Silicon with a length of 0.43 micrometers and it is doped with Boron at a concentration of 671061810676249919488 cm^-3. The drain region is of the material Diamond with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 98963001952772210688 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.4)\n(define Lgl 0.43)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.34)\n(define Ld 0.34)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t992000228317366583296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t114649503128972951552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t671061810676249919488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t98963001952772210688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 325903406839677714432 cm^-3. The short gate region is of the material GaN with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 49198882543140159488 cm^-3. The long gate region is of the material GaN with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 935126822388309819392 cm^-3. The drain region is of the material Diamond with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 410687146261638807552 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.75)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t325903406839677714432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t49198882543140159488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t935126822388309819392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t410687146261638807552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.32 micrometers and it is doped with Boron at a concentration of 566162552589796900864 cm^-3. The short gate region is of the material SiGe with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 627564906369240399872 cm^-3. The long gate region is of the material Diamond with a length of 0.65 micrometers and it is doped with Phosphorus at a concentration of 906095601766560563200 cm^-3. The drain region is of the material Germanium with a length of 0.32 micrometers and it is doped with Boron at a concentration of 931454199788202229760 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.35)\n(define Lgl 0.65)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.32)\n(define Ld 0.32)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t566162552589796900864\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t627564906369240399872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t906095601766560563200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t931454199788202229760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 423115657818071498752 cm^-3. The short gate region is of the material Diamond with a length of 0.54 micrometers and it is doped with Boron at a concentration of 542245744230502105088 cm^-3. The long gate region is of the material Diamond with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 658382417353864380416 cm^-3. The drain region is of the material Diamond with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 337694560535115202560 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.54)\n(define Lgl 0.92)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.61)\n(define Ld 0.61)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t423115657818071498752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t542245744230502105088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t658382417353864380416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t337694560535115202560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 116315093288601862144 cm^-3. The short gate region is of the material Diamond with a length of 0.79 micrometers and it is doped with Boron at a concentration of 338297295716994252800 cm^-3. The long gate region is of the material Silicon with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 486248015936502104064 cm^-3. The drain region is of the material Germanium with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 321466761653365637120 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.79)\n(define Lgl 0.66)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t116315093288601862144\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t338297295716994252800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t486248015936502104064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t321466761653365637120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 29036830411655741440 cm^-3. The short gate region is of the material SiGe with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 70986660684249677824 cm^-3. The long gate region is of the material GaN with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 601573743786382983168 cm^-3. The drain region is of the material GaN with a length of 0.42 micrometers and it is doped with Boron at a concentration of 914533010615103782912 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.21)\n(define Lgl 0.06)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.42)\n(define Ld 0.42)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t29036830411655741440\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t70986660684249677824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t601573743786382983168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t914533010615103782912\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 255918532309074182144 cm^-3. The short gate region is of the material Diamond with a length of 0.56 micrometers and it is doped with Boron at a concentration of 194075594572646809600 cm^-3. The long gate region is of the material GaN with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 288895515601092837376 cm^-3. The drain region is of the material Silicon with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 251625264911562571776 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.56)\n(define Lgl 0.39)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t255918532309074182144\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t194075594572646809600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t288895515601092837376\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t251625264911562571776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 904196955571821740032 cm^-3. The short gate region is of the material Silicon with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 465322991458018000896 cm^-3. The long gate region is of the material Diamond with a length of 0.41 micrometers and it is doped with Boron at a concentration of 202077507659363647488 cm^-3. The drain region is of the material Germanium with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 698414934709137440768 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.94)\n(define Lgl 0.41)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.29)\n(define Ld 0.29)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t904196955571821740032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t465322991458018000896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t202077507659363647488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t698414934709137440768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.44 micrometers and it is doped with Boron at a concentration of 428699277109921054720 cm^-3. The short gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 947603178685289201664 cm^-3. The long gate region is of the material Germanium with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 212371944114103582720 cm^-3. The drain region is of the material Diamond with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 736258382227106824192 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.34)\n(define Lgl 0.05)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.44)\n(define Ld 0.44)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t428699277109921054720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t947603178685289201664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t212371944114103582720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t736258382227106824192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.52 micrometers and it is doped with Boron at a concentration of 146509366982195331072 cm^-3. The short gate region is of the material GaN with a length of 0.18 micrometers and it is doped with Boron at a concentration of 509292036853783330816 cm^-3. The long gate region is of the material Germanium with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 388942380348878618624 cm^-3. The drain region is of the material SiGe with a length of 0.52 micrometers and it is doped with Boron at a concentration of 817290416698764427264 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.18)\n(define Lgl 0.23)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.52)\n(define Ld 0.52)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t146509366982195331072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t509292036853783330816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t388942380348878618624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t817290416698764427264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 760779836171999772672 cm^-3. The short gate region is of the material Silicon with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 61022973645254836224 cm^-3. The long gate region is of the material Diamond with a length of 0.56 micrometers and it is doped with Boron at a concentration of 994462059434776854528 cm^-3. The drain region is of the material SiGe with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 187332514218062774272 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.22)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.81)\n(define Ld 0.81)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t760779836171999772672\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t61022973645254836224\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t994462059434776854528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t187332514218062774272\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 450127425073062739968 cm^-3. The short gate region is of the material Silicon with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 525364669859166158848 cm^-3. The long gate region is of the material Diamond with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 715550893025883979776 cm^-3. The drain region is of the material GaN with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 119128564671514001408 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.82)\n(define Lgl 0.45)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t450127425073062739968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t525364669859166158848\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t715550893025883979776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t119128564671514001408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 719259185342091755520 cm^-3. The short gate region is of the material Silicon with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 977278117069601898496 cm^-3. The long gate region is of the material Germanium with a length of 0.02 micrometers and it is doped with Boron at a concentration of 865082064626772475904 cm^-3. The drain region is of the material Diamond with a length of 0.18 micrometers and it is doped with Boron at a concentration of 350960774986367762432 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.06)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.18)\n(define Ld 0.18)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t719259185342091755520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t977278117069601898496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t865082064626772475904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t350960774986367762432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.04 micrometers and it is doped with Boron at a concentration of 387409575775036112896 cm^-3. The short gate region is of the material GaN with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 61815322451804643328 cm^-3. The long gate region is of the material SiGe with a length of 0.33 micrometers and it is doped with Boron at a concentration of 11847509265793210368 cm^-3. The drain region is of the material SiGe with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 833353011182454046720 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.62)\n(define Lgl 0.33)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t387409575775036112896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t61815322451804643328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t11847509265793210368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t833353011182454046720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 444426170172600614912 cm^-3. The short gate region is of the material Silicon with a length of 0.44 micrometers and it is doped with Boron at a concentration of 555693528114799443968 cm^-3. The long gate region is of the material GaN with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 768953497692819030016 cm^-3. The drain region is of the material Silicon with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 286142014125306839040 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.44)\n(define Lgl 0.01)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.57)\n(define Ld 0.57)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t444426170172600614912\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t555693528114799443968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t768953497692819030016\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t286142014125306839040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 262007214830225915904 cm^-3. The short gate region is of the material SiGe with a length of 1.0 micrometers and it is doped with Boron at a concentration of 844738481387800363008 cm^-3. The long gate region is of the material SiGe with a length of 0.95 micrometers and it is doped with Boron at a concentration of 706499167267370303488 cm^-3. The drain region is of the material Silicon with a length of 0.63 micrometers and it is doped with Boron at a concentration of 450870716353380089856 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 1.0)\n(define Lgl 0.95)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.63)\n(define Ld 0.63)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t262007214830225915904\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t844738481387800363008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t706499167267370303488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t450870716353380089856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.02 micrometers and it is doped with Boron at a concentration of 530002298502517227520 cm^-3. The short gate region is of the material GaN with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 906328711478977232896 cm^-3. The long gate region is of the material Germanium with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 767017649755516436480 cm^-3. The drain region is of the material Germanium with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 509865001390074101760 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.55)\n(define Lgl 0.63)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.02)\n(define Ld 0.02)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t530002298502517227520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t906328711478977232896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t767017649755516436480\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t509865001390074101760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 277478752285574037504 cm^-3. The short gate region is of the material Silicon with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 851527565417444671488 cm^-3. The long gate region is of the material Diamond with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 479564374150758006784 cm^-3. The drain region is of the material GaN with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 511961718600966733824 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.71)\n(define Lgl 0.78)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t277478752285574037504\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t851527565417444671488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t479564374150758006784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t511961718600966733824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 865991076149979774976 cm^-3. The short gate region is of the material Germanium with a length of 0.34 micrometers and it is doped with Boron at a concentration of 355191016475521056768 cm^-3. The long gate region is of the material Silicon with a length of 0.61 micrometers and it is doped with Boron at a concentration of 90127976311449436160 cm^-3. The drain region is of the material SiGe with a length of 0.87 micrometers and it is doped with Boron at a concentration of 798536717398510534656 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.34)\n(define Lgl 0.61)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.87)\n(define Ld 0.87)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t865991076149979774976\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t355191016475521056768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t90127976311449436160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t798536717398510534656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 527321850685759684608 cm^-3. The short gate region is of the material SiGe with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 72743048057163751424 cm^-3. The long gate region is of the material Silicon with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 427654243691827953664 cm^-3. The drain region is of the material GaN with a length of 0.82 micrometers and it is doped with Boron at a concentration of 991757357365294006272 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.62)\n(define Lgl 0.87)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.82)\n(define Ld 0.82)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t527321850685759684608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t72743048057163751424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t427654243691827953664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t991757357365294006272\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 703683646540749602816 cm^-3. The short gate region is of the material SiGe with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 911211345860047536128 cm^-3. The long gate region is of the material Silicon with a length of 0.01 micrometers and it is doped with Phosphorus at a concentration of 18665169812967862272 cm^-3. The drain region is of the material GaN with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 928592489913920651264 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.75)\n(define Lgl 0.01)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t703683646540749602816\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t911211345860047536128\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t18665169812967862272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t928592489913920651264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 945684364020218331136 cm^-3. The short gate region is of the material Germanium with a length of 0.65 micrometers and it is doped with Arsenic at a concentration of 450624846348674007040 cm^-3. The long gate region is of the material Diamond with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 474475784307526074368 cm^-3. The drain region is of the material GaN with a length of 0.96 micrometers and it is doped with Boron at a concentration of 119080017360507420672 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.65)\n(define Lgl 0.67)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t945684364020218331136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t450624846348674007040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t474475784307526074368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t119080017360507420672\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 89336497033173893120 cm^-3. The short gate region is of the material SiGe with a length of 0.05 micrometers and it is doped with Boron at a concentration of 324594960635362934784 cm^-3. The long gate region is of the material Germanium with a length of 0.72 micrometers and it is doped with Boron at a concentration of 280336715350703964160 cm^-3. The drain region is of the material Silicon with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 184968152653136625664 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.05)\n(define Lgl 0.72)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.14)\n(define Ld 0.14)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t89336497033173893120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t324594960635362934784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t280336715350703964160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t184968152653136625664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.6 micrometers and it is doped with Boron at a concentration of 820665768694920118272 cm^-3. The short gate region is of the material GaN with a length of 0.44 micrometers and it is doped with Boron at a concentration of 222771955583179423744 cm^-3. The long gate region is of the material Diamond with a length of 0.38 micrometers and it is doped with Boron at a concentration of 536372726911610912768 cm^-3. The drain region is of the material SiGe with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 482139118141542891520 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.44)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.6)\n(define Ld 0.6)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t820665768694920118272\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t222771955583179423744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t536372726911610912768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t482139118141542891520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.59 micrometers and it is doped with Boron at a concentration of 32418745113902096384 cm^-3. The short gate region is of the material Silicon with a length of 0.9 micrometers and it is doped with Boron at a concentration of 440915036450063777792 cm^-3. The long gate region is of the material Diamond with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 60936684672348069888 cm^-3. The drain region is of the material GaN with a length of 0.59 micrometers and it is doped with Boron at a concentration of 284001875218894880768 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.9)\n(define Lgl 0.29)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t32418745113902096384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t440915036450063777792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t60936684672348069888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t284001875218894880768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.07 micrometers and it is doped with Boron at a concentration of 467886847186512379904 cm^-3. The short gate region is of the material SiGe with a length of 0.6 micrometers and it is doped with Boron at a concentration of 379350781868283527168 cm^-3. The long gate region is of the material Germanium with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 756515999853721026560 cm^-3. The drain region is of the material SiGe with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 10670279639455219712 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.6)\n(define Lgl 0.45)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.07)\n(define Ld 0.07)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t467886847186512379904\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t379350781868283527168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t756515999853721026560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t10670279639455219712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 547526755737634471936 cm^-3. The short gate region is of the material Diamond with a length of 0.32 micrometers and it is doped with Boron at a concentration of 252333293443334275072 cm^-3. The long gate region is of the material GaN with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 772744405151988842496 cm^-3. The drain region is of the material Germanium with a length of 0.93 micrometers and it is doped with Boron at a concentration of 960185009108262584320 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.32)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.93)\n(define Ld 0.93)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t547526755737634471936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t252333293443334275072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t772744405151988842496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t960185009108262584320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.58 micrometers and it is doped with Boron at a concentration of 123437079850981687296 cm^-3. The short gate region is of the material GaN with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 479071569991581433856 cm^-3. The long gate region is of the material Diamond with a length of 0.81 micrometers and it is doped with Boron at a concentration of 879621291018044178432 cm^-3. The drain region is of the material Germanium with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 997718544628659519488 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.14)\n(define Lgl 0.81)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t123437079850981687296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t479071569991581433856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t879621291018044178432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t997718544628659519488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 663511643647685033984 cm^-3. The short gate region is of the material Silicon with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 368694945266263392256 cm^-3. The long gate region is of the material GaN with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 951712553712397975552 cm^-3. The drain region is of the material SiGe with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 928502710498252947456 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.35)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.99)\n(define Ld 0.99)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t663511643647685033984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t368694945266263392256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t951712553712397975552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t928502710498252947456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 600934538004468465664 cm^-3. The short gate region is of the material SiGe with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 45693420482957156352 cm^-3. The long gate region is of the material Silicon with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 48303574143398789120 cm^-3. The drain region is of the material Diamond with a length of 0.2 micrometers and it is doped with Boron at a concentration of 726618462395304509440 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.42)\n(define Lgl 0.18)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t600934538004468465664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t45693420482957156352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t48303574143398789120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t726618462395304509440\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 178228556772887953408 cm^-3. The short gate region is of the material SiGe with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 732667948349051502592 cm^-3. The long gate region is of the material Silicon with a length of 0.5 micrometers and it is doped with Boron at a concentration of 946162716834938486784 cm^-3. The drain region is of the material Silicon with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 73403363701816655872 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.67)\n(define Lgl 0.5)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t178228556772887953408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t732667948349051502592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t946162716834938486784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t73403363701816655872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 4988592721383119872 cm^-3. The short gate region is of the material Diamond with a length of 0.69 micrometers and it is doped with Boron at a concentration of 492818618633821618176 cm^-3. The long gate region is of the material SiGe with a length of 0.84 micrometers and it is doped with Boron at a concentration of 811853025197625180160 cm^-3. The drain region is of the material Diamond with a length of 0.04 micrometers and it is doped with Boron at a concentration of 316416526751749111808 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.69)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t4988592721383119872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t492818618633821618176\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t811853025197625180160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t316416526751749111808\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.88 micrometers and it is doped with Boron at a concentration of 503961188256516669440 cm^-3. The short gate region is of the material GaN with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 94839107214262796288 cm^-3. The long gate region is of the material SiGe with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 741267016264963063808 cm^-3. The drain region is of the material Silicon with a length of 0.88 micrometers and it is doped with Boron at a concentration of 887563025927462322176 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.39)\n(define Lgl 0.03)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.88)\n(define Ld 0.88)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t503961188256516669440\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t94839107214262796288\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t741267016264963063808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t887563025927462322176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.37 micrometers and it is doped with Boron at a concentration of 895681194545736712192 cm^-3. The short gate region is of the material GaN with a length of 0.49 micrometers and it is doped with Boron at a concentration of 612133634551570497536 cm^-3. The long gate region is of the material SiGe with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 966508824295951695872 cm^-3. The drain region is of the material Diamond with a length of 0.37 micrometers and it is doped with Boron at a concentration of 896506380184188092416 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.49)\n(define Lgl 0.2)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.37)\n(define Ld 0.37)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t895681194545736712192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t612133634551570497536\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t966508824295951695872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t896506380184188092416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 637700718817250115584 cm^-3. The short gate region is of the material Silicon with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 809318440934180913152 cm^-3. The long gate region is of the material Silicon with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 276276204799225954304 cm^-3. The drain region is of the material SiGe with a length of 0.2 micrometers and it is doped with Boron at a concentration of 214637778209877032960 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.66)\n(define Lgl 0.23)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t637700718817250115584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t809318440934180913152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t276276204799225954304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t214637778209877032960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.21 micrometers and it is doped with Boron at a concentration of 743196278682332037120 cm^-3. The short gate region is of the material Germanium with a length of 0.07 micrometers and it is doped with Boron at a concentration of 462444579509304557568 cm^-3. The long gate region is of the material Diamond with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 796153354514604752896 cm^-3. The drain region is of the material Diamond with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 939858670873273696256 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.07)\n(define Lgl 0.32)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t743196278682332037120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t462444579509304557568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t796153354514604752896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t939858670873273696256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 555733104121550340096 cm^-3. The short gate region is of the material Silicon with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 661093964639381880832 cm^-3. The long gate region is of the material Silicon with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 80237489934206730240 cm^-3. The drain region is of the material Diamond with a length of 0.4 micrometers and it is doped with Boron at a concentration of 969441861856241647616 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.58)\n(define Lgl 0.99)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t555733104121550340096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t661093964639381880832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t80237489934206730240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t969441861856241647616\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 937136684991321866240 cm^-3. The short gate region is of the material Germanium with a length of 0.27 micrometers and it is doped with Boron at a concentration of 401376322416892837888 cm^-3. The long gate region is of the material Silicon with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 167020033956389781504 cm^-3. The drain region is of the material Silicon with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 45867420076555411456 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.27)\n(define Lgl 0.51)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t937136684991321866240\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t401376322416892837888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t167020033956389781504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t45867420076555411456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.97 micrometers and it is doped with Boron at a concentration of 291651218692229038080 cm^-3. The short gate region is of the material SiGe with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 376918315126231924736 cm^-3. The long gate region is of the material Silicon with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 151378050902142320640 cm^-3. The drain region is of the material Germanium with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 866019340947722862592 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.15)\n(define Lgl 0.82)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.97)\n(define Ld 0.97)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t291651218692229038080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t376918315126231924736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t151378050902142320640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t866019340947722862592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.97 micrometers and it is doped with Boron at a concentration of 877104602160698884096 cm^-3. The short gate region is of the material GaN with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 891396858470204702720 cm^-3. The long gate region is of the material GaN with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 122090534951292059648 cm^-3. The drain region is of the material Germanium with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 110079941231408168960 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.58)\n(define Lgl 0.99)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.97)\n(define Ld 0.97)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t877104602160698884096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t891396858470204702720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t122090534951292059648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t110079941231408168960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.73 micrometers and it is doped with Boron at a concentration of 47390875580922241024 cm^-3. The short gate region is of the material Diamond with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 125172331792364634112 cm^-3. The long gate region is of the material Silicon with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 259605713798345392128 cm^-3. The drain region is of the material Silicon with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 474987472634478460928 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.47)\n(define Lgl 0.37)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.73)\n(define Ld 0.73)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t47390875580922241024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t125172331792364634112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t259605713798345392128\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t474987472634478460928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.41 micrometers and it is doped with Boron at a concentration of 251473421617690378240 cm^-3. The short gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 32354482705218125824 cm^-3. The long gate region is of the material Silicon with a length of 0.6 micrometers and it is doped with Boron at a concentration of 956020168620606357504 cm^-3. The drain region is of the material Diamond with a length of 0.41 micrometers and it is doped with Boron at a concentration of 794049762969395658752 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.34)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.41)\n(define Ld 0.41)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t251473421617690378240\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t32354482705218125824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t956020168620606357504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t794049762969395658752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 376618730979888594944 cm^-3. The short gate region is of the material SiGe with a length of 0.98 micrometers and it is doped with Boron at a concentration of 610757026385755373568 cm^-3. The long gate region is of the material SiGe with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 925453483766926278656 cm^-3. The drain region is of the material Germanium with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 569958312461385859072 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.98)\n(define Lgl 0.63)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.03)\n(define Ld 0.03)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t376618730979888594944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t610757026385755373568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t925453483766926278656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t569958312461385859072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.15 micrometers and it is doped with Boron at a concentration of 524834725262123073536 cm^-3. The short gate region is of the material Germanium with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 239044608522153164800 cm^-3. The long gate region is of the material Silicon with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 947062333443110207488 cm^-3. The drain region is of the material GaN with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 31224619344172269568 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.69)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t524834725262123073536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t239044608522153164800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t947062333443110207488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t31224619344172269568\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.64 micrometers and it is doped with Boron at a concentration of 517514582484815970304 cm^-3. The short gate region is of the material SiGe with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 680819159210673569792 cm^-3. The long gate region is of the material Diamond with a length of 0.42 micrometers and it is doped with Boron at a concentration of 870334251767295246336 cm^-3. The drain region is of the material Diamond with a length of 0.64 micrometers and it is doped with Boron at a concentration of 890319471325290823680 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.16)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.64)\n(define Ld 0.64)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t517514582484815970304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t680819159210673569792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t870334251767295246336\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t890319471325290823680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.72 micrometers and it is doped with Boron at a concentration of 764303567336878768128 cm^-3. The short gate region is of the material Germanium with a length of 0.68 micrometers and it is doped with Boron at a concentration of 178325407244540116992 cm^-3. The long gate region is of the material Silicon with a length of 0.09 micrometers and it is doped with Boron at a concentration of 80431809442145501184 cm^-3. The drain region is of the material SiGe with a length of 0.72 micrometers and it is doped with Arsenic at a concentration of 67651870360324530176 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.68)\n(define Lgl 0.09)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.72)\n(define Ld 0.72)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t764303567336878768128\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t178325407244540116992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t80431809442145501184\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t67651870360324530176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 979127183471673999360 cm^-3. The short gate region is of the material Germanium with a length of 0.65 micrometers and it is doped with Boron at a concentration of 319760404980989558784 cm^-3. The long gate region is of the material Diamond with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 967203915575719493632 cm^-3. The drain region is of the material Diamond with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 238536591003241840640 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.65)\n(define Lgl 0.85)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t979127183471673999360\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t319760404980989558784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t967203915575719493632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t238536591003241840640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 255728696612371628032 cm^-3. The short gate region is of the material Silicon with a length of 0.45 micrometers and it is doped with Boron at a concentration of 987804167243799199744 cm^-3. The long gate region is of the material Silicon with a length of 0.04 micrometers and it is doped with Boron at a concentration of 853829001150214438912 cm^-3. The drain region is of the material Germanium with a length of 0.81 micrometers and it is doped with Boron at a concentration of 916226622782044241920 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.45)\n(define Lgl 0.04)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.81)\n(define Ld 0.81)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t255728696612371628032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t987804167243799199744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t853829001150214438912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t916226622782044241920\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 714123883965708107776 cm^-3. The short gate region is of the material Diamond with a length of 0.23 micrometers and it is doped with Boron at a concentration of 401558093253076844544 cm^-3. The long gate region is of the material Germanium with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 507664362305164673024 cm^-3. The drain region is of the material Germanium with a length of 0.61 micrometers and it is doped with Boron at a concentration of 980938906816072515584 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.23)\n(define Lgl 0.45)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.61)\n(define Ld 0.61)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t714123883965708107776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t401558093253076844544\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t507664362305164673024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t980938906816072515584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 463481539085390970880 cm^-3. The short gate region is of the material GaN with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 388962554868868448256 cm^-3. The long gate region is of the material SiGe with a length of 0.87 micrometers and it is doped with Boron at a concentration of 391774025852628762624 cm^-3. The drain region is of the material Silicon with a length of 0.66 micrometers and it is doped with Boron at a concentration of 797491118086092488704 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.69)\n(define Lgl 0.87)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.66)\n(define Ld 0.66)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t463481539085390970880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t388962554868868448256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t391774025852628762624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t797491118086092488704\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.04 micrometers and it is doped with Boron at a concentration of 768988686091409031168 cm^-3. The short gate region is of the material GaN with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 201953054856288305152 cm^-3. The long gate region is of the material Germanium with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 413871771677040443392 cm^-3. The drain region is of the material Diamond with a length of 0.04 micrometers and it is doped with Boron at a concentration of 844768757455603630080 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.2)\n(define Lgl 0.78)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t768988686091409031168\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t201953054856288305152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t413871771677040443392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t844768757455603630080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 228264031456977256448 cm^-3. The short gate region is of the material Silicon with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 752796088757933703168 cm^-3. The long gate region is of the material Diamond with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 844728277565343793152 cm^-3. The drain region is of the material Germanium with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 309038171366137266176 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.48)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.55)\n(define Ld 0.55)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t228264031456977256448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t752796088757933703168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t844728277565343793152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t309038171366137266176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 184544168366853488640 cm^-3. The short gate region is of the material SiGe with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 515239646985111863296 cm^-3. The long gate region is of the material Diamond with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 245963171637033566208 cm^-3. The drain region is of the material Germanium with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 926336369908633042944 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.4)\n(define Lgl 0.05)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.89)\n(define Ld 0.89)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t184544168366853488640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t515239646985111863296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t245963171637033566208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t926336369908633042944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.4 micrometers and it is doped with Boron at a concentration of 932294796658768740352 cm^-3. The short gate region is of the material GaN with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 95859372482808315904 cm^-3. The long gate region is of the material GaN with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 470915448316685451264 cm^-3. The drain region is of the material SiGe with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 491640923569041571840 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.52)\n(define Lgl 0.47)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t932294796658768740352\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t95859372482808315904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t470915448316685451264\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t491640923569041571840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.3 micrometers and it is doped with Boron at a concentration of 738989926481189404672 cm^-3. The short gate region is of the material Diamond with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 5701716353143460864 cm^-3. The long gate region is of the material Silicon with a length of 0.36 micrometers and it is doped with Phosphorus at a concentration of 789293115503747530752 cm^-3. The drain region is of the material GaN with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 156667088654876082176 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.61)\n(define Lgl 0.36)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t738989926481189404672\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t5701716353143460864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t789293115503747530752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t156667088654876082176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 170126168027749023744 cm^-3. The short gate region is of the material Germanium with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 655224312332632981504 cm^-3. The long gate region is of the material SiGe with a length of 0.52 micrometers and it is doped with Boron at a concentration of 38547118593918672896 cm^-3. The drain region is of the material Germanium with a length of 0.91 micrometers and it is doped with Boron at a concentration of 355528431191392256000 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.81)\n(define Lgl 0.52)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.91)\n(define Ld 0.91)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t170126168027749023744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t655224312332632981504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t38547118593918672896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t355528431191392256000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.67 micrometers and it is doped with Boron at a concentration of 462387296915830734848 cm^-3. The short gate region is of the material GaN with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 289662109441841627136 cm^-3. The long gate region is of the material Diamond with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 192049759286690250752 cm^-3. The drain region is of the material Diamond with a length of 0.67 micrometers and it is doped with Boron at a concentration of 433815119656682258432 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.02)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.67)\n(define Ld 0.67)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t462387296915830734848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t289662109441841627136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t192049759286690250752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t433815119656682258432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 502768461767837220864 cm^-3. The short gate region is of the material Silicon with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 619555897169414193152 cm^-3. The long gate region is of the material Diamond with a length of 0.19 micrometers and it is doped with Boron at a concentration of 28443004155801247744 cm^-3. The drain region is of the material SiGe with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 633526160413863313408 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.18)\n(define Lgl 0.19)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.68)\n(define Ld 0.68)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t502768461767837220864\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t619555897169414193152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t28443004155801247744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t633526160413863313408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 582044432940822691840 cm^-3. The short gate region is of the material GaN with a length of 0.53 micrometers and it is doped with Boron at a concentration of 585977630564542578688 cm^-3. The long gate region is of the material Germanium with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 513708749531106902016 cm^-3. The drain region is of the material GaN with a length of 0.83 micrometers and it is doped with Boron at a concentration of 257275960699281408000 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.53)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.83)\n(define Ld 0.83)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t582044432940822691840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t585977630564542578688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t513708749531106902016\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t257275960699281408000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.95 micrometers and it is doped with Boron at a concentration of 876460855152156344320 cm^-3. The short gate region is of the material Germanium with a length of 0.98 micrometers and it is doped with Arsenic at a concentration of 465712087395165143040 cm^-3. The long gate region is of the material Germanium with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 136294891591627603968 cm^-3. The drain region is of the material Diamond with a length of 0.95 micrometers and it is doped with Boron at a concentration of 746058820572009201664 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.98)\n(define Lgl 0.21)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.95)\n(define Ld 0.95)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t876460855152156344320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t465712087395165143040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t136294891591627603968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t746058820572009201664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 996289192151969824768 cm^-3. The short gate region is of the material GaN with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 543012742158952431616 cm^-3. The long gate region is of the material SiGe with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 492594701717881487360 cm^-3. The drain region is of the material Germanium with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 447889236758574661632 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.73)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.56)\n(define Ld 0.56)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t996289192151969824768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t543012742158952431616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t492594701717881487360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t447889236758574661632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 366839242550888235008 cm^-3. The short gate region is of the material Diamond with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 278451699565833289728 cm^-3. The long gate region is of the material Diamond with a length of 0.26 micrometers and it is doped with Boron at a concentration of 916382719996859777024 cm^-3. The drain region is of the material SiGe with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 862728107865845137408 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.4)\n(define Lgl 0.26)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.01)\n(define Ld 0.01)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t366839242550888235008\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t278451699565833289728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t916382719996859777024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t862728107865845137408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.89 micrometers and it is doped with Boron at a concentration of 565280678852527128576 cm^-3. The short gate region is of the material Germanium with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 594734735499741888512 cm^-3. The long gate region is of the material Silicon with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 317123668163449716736 cm^-3. The drain region is of the material GaN with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 144245621606673907712 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.87)\n(define Lgl 0.52)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.89)\n(define Ld 0.89)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t565280678852527128576\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t594734735499741888512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t317123668163449716736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t144245621606673907712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.94 micrometers and it is doped with Boron at a concentration of 486842722745990774784 cm^-3. The short gate region is of the material Silicon with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 974264008431051603968 cm^-3. The long gate region is of the material Silicon with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 108210133891932684288 cm^-3. The drain region is of the material Diamond with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 89840840347198144512 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.42)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.94)\n(define Ld 0.94)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t486842722745990774784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t974264008431051603968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t108210133891932684288\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t89840840347198144512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 415263969598278729728 cm^-3. The short gate region is of the material Silicon with a length of 0.21 micrometers and it is doped with Boron at a concentration of 815837476880523067392 cm^-3. The long gate region is of the material Germanium with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 577704258543649161216 cm^-3. The drain region is of the material SiGe with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 635928912032526499840 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.21)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.7)\n(define Ld 0.7)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t415263969598278729728\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t815837476880523067392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t577704258543649161216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t635928912032526499840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 842908003443709444096 cm^-3. The short gate region is of the material Germanium with a length of 0.33 micrometers and it is doped with Boron at a concentration of 89443334923133468672 cm^-3. The long gate region is of the material GaN with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 780687080275845316608 cm^-3. The drain region is of the material Diamond with a length of 0.94 micrometers and it is doped with Boron at a concentration of 604836836199221035008 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.33)\n(define Lgl 0.36)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.94)\n(define Ld 0.94)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t842908003443709444096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t89443334923133468672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t780687080275845316608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t604836836199221035008\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.36 micrometers and it is doped with Phosphorus at a concentration of 952529999062580723712 cm^-3. The short gate region is of the material SiGe with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 905840660854051962880 cm^-3. The long gate region is of the material SiGe with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 728743363816051179520 cm^-3. The drain region is of the material SiGe with a length of 0.36 micrometers and it is doped with Boron at a concentration of 883075940292424105984 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.27)\n(define Lgl 0.59)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.36)\n(define Ld 0.36)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t952529999062580723712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t905840660854051962880\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t728743363816051179520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t883075940292424105984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 848374617163104518144 cm^-3. The short gate region is of the material Diamond with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 541274185348827971584 cm^-3. The long gate region is of the material Silicon with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 619846464757152088064 cm^-3. The drain region is of the material Silicon with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 416368027263084134400 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.6)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t848374617163104518144\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t541274185348827971584\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t619846464757152088064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t416368027263084134400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 169140648220630548480 cm^-3. The short gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Boron at a concentration of 873321682380856360960 cm^-3. The long gate region is of the material Silicon with a length of 0.51 micrometers and it is doped with Boron at a concentration of 460361739630552809472 cm^-3. The drain region is of the material SiGe with a length of 0.81 micrometers and it is doped with Boron at a concentration of 41981810345721896960 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.34)\n(define Lgl 0.51)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.81)\n(define Ld 0.81)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t169140648220630548480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t873321682380856360960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t460361739630552809472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t41981810345721896960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.28 micrometers and it is doped with Boron at a concentration of 694000594851721904128 cm^-3. The short gate region is of the material Silicon with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 678875148442324828160 cm^-3. The long gate region is of the material SiGe with a length of 0.04 micrometers and it is doped with Boron at a concentration of 932904301629193715712 cm^-3. The drain region is of the material Germanium with a length of 0.28 micrometers and it is doped with Boron at a concentration of 238906998960452894720 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.84)\n(define Lgl 0.04)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t694000594851721904128\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t678875148442324828160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t932904301629193715712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t238906998960452894720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.9 micrometers and it is doped with Boron at a concentration of 586413671426958557184 cm^-3. The short gate region is of the material Diamond with a length of 0.54 micrometers and it is doped with Phosphorus at a concentration of 219187667440397975552 cm^-3. The long gate region is of the material SiGe with a length of 0.48 micrometers and it is doped with Boron at a concentration of 527884801789384982528 cm^-3. The drain region is of the material Germanium with a length of 0.9 micrometers and it is doped with Boron at a concentration of 702884280044167364608 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.54)\n(define Lgl 0.48)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t586413671426958557184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t219187667440397975552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t527884801789384982528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t702884280044167364608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.28 micrometers and it is doped with Boron at a concentration of 93144494563524476928 cm^-3. The short gate region is of the material Diamond with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 762775671062263627776 cm^-3. The long gate region is of the material GaN with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 383821517325555204096 cm^-3. The drain region is of the material Silicon with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 404354607504306339840 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.26)\n(define Lgl 0.28)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t93144494563524476928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t762775671062263627776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t383821517325555204096\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t404354607504306339840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 52718139105796464640 cm^-3. The short gate region is of the material GaN with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 714110189319716470784 cm^-3. The long gate region is of the material Diamond with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 116711650294947037184 cm^-3. The drain region is of the material Diamond with a length of 0.64 micrometers and it is doped with Boron at a concentration of 737269362166368567296 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.21)\n(define Lgl 0.59)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.64)\n(define Ld 0.64)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t52718139105796464640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t714110189319716470784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t116711650294947037184\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t737269362166368567296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 895911079416756043776 cm^-3. The short gate region is of the material SiGe with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 737700199021320077312 cm^-3. The long gate region is of the material Diamond with a length of 0.38 micrometers and it is doped with Boron at a concentration of 384258357776071917568 cm^-3. The drain region is of the material SiGe with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 133529604256642875392 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.94)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.64)\n(define Ld 0.64)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t895911079416756043776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t737700199021320077312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t384258357776071917568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t133529604256642875392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 503897357984212844544 cm^-3. The short gate region is of the material GaN with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 350725468133050679296 cm^-3. The long gate region is of the material Diamond with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 428055606553705971712 cm^-3. The drain region is of the material Silicon with a length of 0.43 micrometers and it is doped with Boron at a concentration of 685221653216802111488 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.82)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.43)\n(define Ld 0.43)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t503897357984212844544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t350725468133050679296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t428055606553705971712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t685221653216802111488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 416582976178902401024 cm^-3. The short gate region is of the material SiGe with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 763629398583446077440 cm^-3. The long gate region is of the material Germanium with a length of 0.39 micrometers and it is doped with Boron at a concentration of 238199257559728750592 cm^-3. The drain region is of the material GaN with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 541314608309909061632 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.93)\n(define Lgl 0.39)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t416582976178902401024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t763629398583446077440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t238199257559728750592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t541314608309909061632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.24 micrometers and it is doped with Boron at a concentration of 983804993420968591360 cm^-3. The short gate region is of the material Diamond with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 193843179381491892224 cm^-3. The long gate region is of the material Germanium with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 627039123511316578304 cm^-3. The drain region is of the material Diamond with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 4371837838250464768 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.05)\n(define Lgl 0.59)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.24)\n(define Ld 0.24)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t983804993420968591360\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t193843179381491892224\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t627039123511316578304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t4371837838250464768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 23403638489215225856 cm^-3. The short gate region is of the material SiGe with a length of 0.15 micrometers and it is doped with Boron at a concentration of 149758848450621603840 cm^-3. The long gate region is of the material GaN with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 698005498817431863296 cm^-3. The drain region is of the material Germanium with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 712932442977934770176 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.15)\n(define Lgl 0.81)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.81)\n(define Ld 0.81)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t23403638489215225856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t149758848450621603840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t698005498817431863296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t712932442977934770176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 870540003300418387968 cm^-3. The short gate region is of the material SiGe with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 893455740156689383424 cm^-3. The long gate region is of the material SiGe with a length of 0.75 micrometers and it is doped with Boron at a concentration of 453059574489953992704 cm^-3. The drain region is of the material SiGe with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 913014688625138073600 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.62)\n(define Lgl 0.75)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.76)\n(define Ld 0.76)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t870540003300418387968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t893455740156689383424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t453059574489953992704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t913014688625138073600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 24273974699459297280 cm^-3. The short gate region is of the material Germanium with a length of 0.24 micrometers and it is doped with Boron at a concentration of 303632215046279135232 cm^-3. The long gate region is of the material Silicon with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 105225158316398854144 cm^-3. The drain region is of the material Diamond with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 806868231620215963648 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.24)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t24273974699459297280\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t303632215046279135232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t105225158316398854144\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t806868231620215963648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 981743329589462695936 cm^-3. The short gate region is of the material Germanium with a length of 0.98 micrometers and it is doped with Boron at a concentration of 307190457678553153536 cm^-3. The long gate region is of the material Silicon with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 144471879863735451648 cm^-3. The drain region is of the material GaN with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 130139740835188097024 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.98)\n(define Lgl 0.5)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.19)\n(define Ld 0.19)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t981743329589462695936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t307190457678553153536\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t144471879863735451648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t130139740835188097024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 586252408104282357760 cm^-3. The short gate region is of the material Germanium with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 632279608996039229440 cm^-3. The long gate region is of the material GaN with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 673961972132953587712 cm^-3. The drain region is of the material Silicon with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 891130205880909824000 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.8)\n(define Lgl 0.96)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t586252408104282357760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t632279608996039229440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t673961972132953587712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t891130205880909824000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 703829379716693491712 cm^-3. The short gate region is of the material Germanium with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 151823795635691978752 cm^-3. The long gate region is of the material GaN with a length of 0.18 micrometers and it is doped with Arsenic at a concentration of 434084981545082421248 cm^-3. The drain region is of the material GaN with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 982278910293384364032 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.62)\n(define Lgl 0.18)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.42)\n(define Ld 0.42)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t703829379716693491712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t151823795635691978752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t434084981545082421248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t982278910293384364032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 718613571564983681024 cm^-3. The short gate region is of the material SiGe with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 332132425294953971712 cm^-3. The long gate region is of the material GaN with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 351018806486634463232 cm^-3. The drain region is of the material Silicon with a length of 0.59 micrometers and it is doped with Boron at a concentration of 797158100025191170048 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.4)\n(define Lgl 0.59)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t718613571564983681024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t332132425294953971712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t351018806486634463232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t797158100025191170048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.62 micrometers and it is doped with Boron at a concentration of 41495300883329310720 cm^-3. The short gate region is of the material Silicon with a length of 0.59 micrometers and it is doped with Boron at a concentration of 675939560054893707264 cm^-3. The long gate region is of the material Germanium with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 586459612279700324352 cm^-3. The drain region is of the material GaN with a length of 0.62 micrometers and it is doped with Boron at a concentration of 649364131562627792896 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.59)\n(define Lgl 0.45)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t41495300883329310720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t675939560054893707264\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t586459612279700324352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t649364131562627792896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 619067606120135655424 cm^-3. The short gate region is of the material SiGe with a length of 0.44 micrometers and it is doped with Boron at a concentration of 925985753247475040256 cm^-3. The long gate region is of the material Silicon with a length of 0.09 micrometers and it is doped with Boron at a concentration of 168158079142685016064 cm^-3. The drain region is of the material Germanium with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 796890823473217536000 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.44)\n(define Lgl 0.09)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.26)\n(define Ld 0.26)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t619067606120135655424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t925985753247475040256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t168158079142685016064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t796890823473217536000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 794189756104484061184 cm^-3. The short gate region is of the material SiGe with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 136799632877025181696 cm^-3. The long gate region is of the material Diamond with a length of 0.85 micrometers and it is doped with Boron at a concentration of 510054190176449986560 cm^-3. The drain region is of the material Diamond with a length of 0.04 micrometers and it is doped with Boron at a concentration of 588006428655520710656 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.68)\n(define Lgl 0.85)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t794189756104484061184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t136799632877025181696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t510054190176449986560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t588006428655520710656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 888588088283471806464 cm^-3. The short gate region is of the material SiGe with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 46220577383779770368 cm^-3. The long gate region is of the material GaN with a length of 0.18 micrometers and it is doped with Boron at a concentration of 929760212210966724608 cm^-3. The drain region is of the material Diamond with a length of 0.8 micrometers and it is doped with Boron at a concentration of 522938273924557438976 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.33)\n(define Lgl 0.18)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.8)\n(define Ld 0.8)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t888588088283471806464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t46220577383779770368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t929760212210966724608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t522938273924557438976\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 101516863792163815424 cm^-3. The short gate region is of the material SiGe with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 298114711335705247744 cm^-3. The long gate region is of the material Germanium with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 241463506494611619840 cm^-3. The drain region is of the material Silicon with a length of 0.87 micrometers and it is doped with Boron at a concentration of 591164519366099206144 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.92)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.87)\n(define Ld 0.87)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t101516863792163815424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t298114711335705247744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t241463506494611619840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t591164519366099206144\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 749763789893765562368 cm^-3. The short gate region is of the material Silicon with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 741598226363967471616 cm^-3. The long gate region is of the material Diamond with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 29072315808436477952 cm^-3. The drain region is of the material Silicon with a length of 0.94 micrometers and it is doped with Boron at a concentration of 225239757518204370944 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.16)\n(define Lgl 0.47)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.94)\n(define Ld 0.94)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t749763789893765562368\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t741598226363967471616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t29072315808436477952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t225239757518204370944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 771945947877459492864 cm^-3. The short gate region is of the material GaN with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 148142025834440458240 cm^-3. The long gate region is of the material Diamond with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 63011064395038244864 cm^-3. The drain region is of the material GaN with a length of 0.44 micrometers and it is doped with Boron at a concentration of 661387089884965896192 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.91)\n(define Lgl 0.08)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.44)\n(define Ld 0.44)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t771945947877459492864\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t148142025834440458240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t63011064395038244864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t661387089884965896192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 466736021119872008192 cm^-3. The short gate region is of the material Diamond with a length of 0.68 micrometers and it is doped with Boron at a concentration of 16115219985882984448 cm^-3. The long gate region is of the material GaN with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 827027731756495011840 cm^-3. The drain region is of the material GaN with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 262113524324879007744 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.68)\n(define Lgl 0.29)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.17)\n(define Ld 0.17)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t466736021119872008192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t16115219985882984448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t827027731756495011840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t262113524324879007744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.28 micrometers and it is doped with Boron at a concentration of 915581935626676076544 cm^-3. The short gate region is of the material Diamond with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 480722785226070818816 cm^-3. The long gate region is of the material Germanium with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 459247599874955411456 cm^-3. The drain region is of the material GaN with a length of 0.28 micrometers and it is doped with Boron at a concentration of 236904069671699218432 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.23)\n(define Lgl 0.91)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t915581935626676076544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t480722785226070818816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t459247599874955411456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t236904069671699218432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 481551312254940479488 cm^-3. The short gate region is of the material Silicon with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 269564882949220466688 cm^-3. The long gate region is of the material Germanium with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 98725777631311298560 cm^-3. The drain region is of the material SiGe with a length of 0.81 micrometers and it is doped with Boron at a concentration of 474858382947147055104 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.49)\n(define Lgl 0.43)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.81)\n(define Ld 0.81)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t481551312254940479488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t269564882949220466688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t98725777631311298560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t474858382947147055104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 840575762500124540928 cm^-3. The short gate region is of the material Diamond with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 634635630657024294912 cm^-3. The long gate region is of the material Germanium with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 196588909683935444992 cm^-3. The drain region is of the material GaN with a length of 0.57 micrometers and it is doped with Boron at a concentration of 434667080060144451584 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.08)\n(define Lgl 0.34)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.57)\n(define Ld 0.57)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t840575762500124540928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t634635630657024294912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t196588909683935444992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t434667080060144451584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 197114882562452160512 cm^-3. The short gate region is of the material Diamond with a length of 0.88 micrometers and it is doped with Boron at a concentration of 550984367619813801984 cm^-3. The long gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Boron at a concentration of 276692096038987890688 cm^-3. The drain region is of the material Silicon with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 187622237489234706432 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.88)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.51)\n(define Ld 0.51)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t197114882562452160512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t550984367619813801984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t276692096038987890688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t187622237489234706432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.42 micrometers and it is doped with Boron at a concentration of 782134819592343257088 cm^-3. The short gate region is of the material Germanium with a length of 0.67 micrometers and it is doped with Boron at a concentration of 480251285499844493312 cm^-3. The long gate region is of the material Germanium with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 495064675437902299136 cm^-3. The drain region is of the material Silicon with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 309176502877044211712 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.67)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.42)\n(define Ld 0.42)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t782134819592343257088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t480251285499844493312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t495064675437902299136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t309176502877044211712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.33 micrometers and it is doped with Boron at a concentration of 459282536740461608960 cm^-3. The short gate region is of the material SiGe with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 839227554990643347456 cm^-3. The long gate region is of the material Germanium with a length of 0.37 micrometers and it is doped with Boron at a concentration of 919838666863159279616 cm^-3. The drain region is of the material Germanium with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 209708602552472862720 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.46)\n(define Lgl 0.37)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t459282536740461608960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t839227554990643347456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t919838666863159279616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t209708602552472862720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 28870565308267548672 cm^-3. The short gate region is of the material SiGe with a length of 0.86 micrometers and it is doped with Boron at a concentration of 536844762160730865664 cm^-3. The long gate region is of the material GaN with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 681419099081061826560 cm^-3. The drain region is of the material GaN with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 904329230930173493248 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.86)\n(define Lgl 0.34)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.93)\n(define Ld 0.93)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t28870565308267548672\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t536844762160730865664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t681419099081061826560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t904329230930173493248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 516164715418006716416 cm^-3. The short gate region is of the material Germanium with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 127622599474280857600 cm^-3. The long gate region is of the material SiGe with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 493947102216853127168 cm^-3. The drain region is of the material GaN with a length of 0.93 micrometers and it is doped with Boron at a concentration of 42149606221133234176 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.43)\n(define Lgl 0.89)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.93)\n(define Ld 0.93)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t516164715418006716416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t127622599474280857600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t493947102216853127168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t42149606221133234176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.12 micrometers and it is doped with Boron at a concentration of 704013902298096599040 cm^-3. The short gate region is of the material GaN with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 588715843607489150976 cm^-3. The long gate region is of the material Germanium with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 325875795005797040128 cm^-3. The drain region is of the material Silicon with a length of 0.12 micrometers and it is doped with Boron at a concentration of 990575836434566610944 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.63)\n(define Lgl 0.5)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.12)\n(define Ld 0.12)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t704013902298096599040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t588715843607489150976\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t325875795005797040128\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t990575836434566610944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 618347399821724483584 cm^-3. The short gate region is of the material SiGe with a length of 0.45 micrometers and it is doped with Boron at a concentration of 751123617904750100480 cm^-3. The long gate region is of the material Diamond with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 189298192365749698560 cm^-3. The drain region is of the material Diamond with a length of 0.95 micrometers and it is doped with Boron at a concentration of 759907016504811192320 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.45)\n(define Lgl 0.92)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.95)\n(define Ld 0.95)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t618347399821724483584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t751123617904750100480\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t189298192365749698560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t759907016504811192320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.97 micrometers and it is doped with Boron at a concentration of 405169341943912988672 cm^-3. The short gate region is of the material Germanium with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 677279754732742377472 cm^-3. The long gate region is of the material Diamond with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 368265625352168931328 cm^-3. The drain region is of the material SiGe with a length of 0.97 micrometers and it is doped with Boron at a concentration of 681106255324513566720 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.39)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.97)\n(define Ld 0.97)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t405169341943912988672\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t677279754732742377472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t368265625352168931328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t681106255324513566720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 782187807170350546944 cm^-3. The short gate region is of the material Germanium with a length of 0.96 micrometers and it is doped with Boron at a concentration of 906109147465797599232 cm^-3. The long gate region is of the material GaN with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 757539654370914729984 cm^-3. The drain region is of the material Germanium with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 887826612629501902848 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.96)\n(define Lgl 0.06)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.69)\n(define Ld 0.69)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t782187807170350546944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t906109147465797599232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t757539654370914729984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t887826612629501902848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 655352400429139099648 cm^-3. The short gate region is of the material SiGe with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 394117419198443028480 cm^-3. The long gate region is of the material Silicon with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 848615565499067400192 cm^-3. The drain region is of the material Silicon with a length of 0.25 micrometers and it is doped with Boron at a concentration of 154486017956936351744 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.54)\n(define Lgl 0.44)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.25)\n(define Ld 0.25)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t655352400429139099648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t394117419198443028480\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t848615565499067400192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t154486017956936351744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 300876070012424945664 cm^-3. The short gate region is of the material GaN with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 554713554825174188032 cm^-3. The long gate region is of the material SiGe with a length of 0.97 micrometers and it is doped with Arsenic at a concentration of 77958192220432859136 cm^-3. The drain region is of the material Silicon with a length of 0.81 micrometers and it is doped with Boron at a concentration of 552827431631691317248 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.72)\n(define Lgl 0.97)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.81)\n(define Ld 0.81)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t300876070012424945664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t554713554825174188032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t77958192220432859136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t552827431631691317248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.11 micrometers and it is doped with Boron at a concentration of 237644538013120331776 cm^-3. The short gate region is of the material SiGe with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 374548820638748246016 cm^-3. The long gate region is of the material Diamond with a length of 0.12 micrometers and it is doped with Boron at a concentration of 476883032511723601920 cm^-3. The drain region is of the material Germanium with a length of 0.11 micrometers and it is doped with Boron at a concentration of 620271055793491279872 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.94)\n(define Lgl 0.12)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.11)\n(define Ld 0.11)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t237644538013120331776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t374548820638748246016\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t476883032511723601920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t620271055793491279872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 166281431106846326784 cm^-3. The short gate region is of the material Diamond with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 162625539609750470656 cm^-3. The long gate region is of the material Germanium with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 733746695418555006976 cm^-3. The drain region is of the material SiGe with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 574200103867530477568 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.81)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.23)\n(define Ld 0.23)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t166281431106846326784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t162625539609750470656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t733746695418555006976\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t574200103867530477568\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.68 micrometers and it is doped with Boron at a concentration of 777503890701076529152 cm^-3. The short gate region is of the material SiGe with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 779539440092048785408 cm^-3. The long gate region is of the material SiGe with a length of 0.06 micrometers and it is doped with Boron at a concentration of 658573221525605711872 cm^-3. The drain region is of the material Diamond with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 410180727871051137024 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.76)\n(define Lgl 0.06)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.68)\n(define Ld 0.68)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t777503890701076529152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t779539440092048785408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t658573221525605711872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t410180727871051137024\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.89 micrometers and it is doped with Boron at a concentration of 488547819165974790144 cm^-3. The short gate region is of the material GaN with a length of 0.09 micrometers and it is doped with Arsenic at a concentration of 285534559508807974912 cm^-3. The long gate region is of the material SiGe with a length of 0.81 micrometers and it is doped with Boron at a concentration of 515540290645479391232 cm^-3. The drain region is of the material Diamond with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 57269832523535376384 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.09)\n(define Lgl 0.81)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.89)\n(define Ld 0.89)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t488547819165974790144\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t285534559508807974912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t515540290645479391232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t57269832523535376384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 258737030936501616640 cm^-3. The short gate region is of the material Germanium with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 952405797100802670592 cm^-3. The long gate region is of the material Diamond with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 621860204111161065472 cm^-3. The drain region is of the material Silicon with a length of 0.73 micrometers and it is doped with Boron at a concentration of 325005439497909698560 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.94)\n(define Lgl 0.81)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.73)\n(define Ld 0.73)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t258737030936501616640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t952405797100802670592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t621860204111161065472\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t325005439497909698560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.94 micrometers and it is doped with Boron at a concentration of 292856665496818450432 cm^-3. The short gate region is of the material SiGe with a length of 0.65 micrometers and it is doped with Phosphorus at a concentration of 38120100079832637440 cm^-3. The long gate region is of the material Germanium with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 60773001316696875008 cm^-3. The drain region is of the material GaN with a length of 0.94 micrometers and it is doped with Boron at a concentration of 15604377048031645696 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.65)\n(define Lgl 0.29)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.94)\n(define Ld 0.94)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t292856665496818450432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t38120100079832637440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t60773001316696875008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t15604377048031645696\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.3 micrometers and it is doped with Boron at a concentration of 612044752783164833792 cm^-3. The short gate region is of the material Germanium with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 600624584669067083776 cm^-3. The long gate region is of the material Silicon with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 61299654267818762240 cm^-3. The drain region is of the material Silicon with a length of 0.3 micrometers and it is doped with Boron at a concentration of 292862680923016232960 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.04)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t612044752783164833792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t600624584669067083776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t61299654267818762240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t292862680923016232960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.1 micrometers and it is doped with Boron at a concentration of 595105839341884669952 cm^-3. The short gate region is of the material SiGe with a length of 0.9 micrometers and it is doped with Phosphorus at a concentration of 388245135103357222912 cm^-3. The long gate region is of the material GaN with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 176394848124634759168 cm^-3. The drain region is of the material GaN with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 483686804943187607552 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.9)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.1)\n(define Ld 0.1)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t595105839341884669952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t388245135103357222912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t176394848124634759168\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t483686804943187607552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 359086243728733503488 cm^-3. The short gate region is of the material Silicon with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 879245451480951816192 cm^-3. The long gate region is of the material GaN with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 311225523259474313216 cm^-3. The drain region is of the material SiGe with a length of 0.28 micrometers and it is doped with Boron at a concentration of 780372406379722178560 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.41)\n(define Lgl 0.28)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t359086243728733503488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t879245451480951816192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t311225523259474313216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t780372406379722178560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 344945332505961168896 cm^-3. The short gate region is of the material Diamond with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 409196655640396824576 cm^-3. The long gate region is of the material Diamond with a length of 0.35 micrometers and it is doped with Boron at a concentration of 893441540763887206400 cm^-3. The drain region is of the material GaN with a length of 0.55 micrometers and it is doped with Boron at a concentration of 179533627478515777536 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.19)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.55)\n(define Ld 0.55)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t344945332505961168896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t409196655640396824576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t893441540763887206400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t179533627478515777536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 974921552364443795456 cm^-3. The short gate region is of the material GaN with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 176772366369369784320 cm^-3. The long gate region is of the material GaN with a length of 0.95 micrometers and it is doped with Boron at a concentration of 880771967782838599680 cm^-3. The drain region is of the material SiGe with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 664477986516491173888 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.28)\n(define Lgl 0.95)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t974921552364443795456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t176772366369369784320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t880771967782838599680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t664477986516491173888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.33 micrometers and it is doped with Boron at a concentration of 144140582087410335744 cm^-3. The short gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Boron at a concentration of 812767027277336936448 cm^-3. The long gate region is of the material GaN with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 49999920455391739904 cm^-3. The drain region is of the material Germanium with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 612306329921072005120 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.86)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t144140582087410335744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t812767027277336936448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t49999920455391739904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t612306329921072005120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.31 micrometers and it is doped with Boron at a concentration of 830313339649205469184 cm^-3. The short gate region is of the material Germanium with a length of 0.59 micrometers and it is doped with Boron at a concentration of 639386255383793631232 cm^-3. The long gate region is of the material Germanium with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 185212870365755834368 cm^-3. The drain region is of the material Diamond with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 718129652433784274944 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.59)\n(define Lgl 0.05)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.31)\n(define Ld 0.31)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t830313339649205469184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t639386255383793631232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t185212870365755834368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t718129652433784274944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 450150916109298040832 cm^-3. The short gate region is of the material GaN with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 577769240255602884608 cm^-3. The long gate region is of the material Germanium with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 499142815591561166848 cm^-3. The drain region is of the material Diamond with a length of 0.47 micrometers and it is doped with Boron at a concentration of 801814243959409606656 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.73)\n(define Lgl 0.44)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.47)\n(define Ld 0.47)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t450150916109298040832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t577769240255602884608\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t499142815591561166848\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t801814243959409606656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 958207252220861743104 cm^-3. The short gate region is of the material Silicon with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 836230699602161172480 cm^-3. The long gate region is of the material Germanium with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 309635479444854538240 cm^-3. The drain region is of the material Germanium with a length of 0.15 micrometers and it is doped with Boron at a concentration of 817067273935854108672 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.28)\n(define Lgl 0.14)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t958207252220861743104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t836230699602161172480\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t309635479444854538240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t817067273935854108672\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 51936306099193151488 cm^-3. The short gate region is of the material SiGe with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 81100729803026235392 cm^-3. The long gate region is of the material SiGe with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 278013830022129025024 cm^-3. The drain region is of the material GaN with a length of 0.23 micrometers and it is doped with Boron at a concentration of 573592692173225328640 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.46)\n(define Lgl 0.53)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.23)\n(define Ld 0.23)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t51936306099193151488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t81100729803026235392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t278013830022129025024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t573592692173225328640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 326911825743565029376 cm^-3. The short gate region is of the material Germanium with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 780976620265118367744 cm^-3. The long gate region is of the material Germanium with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 280005654748468412416 cm^-3. The drain region is of the material Diamond with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 583917211062913728512 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.62)\n(define Lgl 0.52)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t326911825743565029376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t780976620265118367744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t280005654748468412416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t583917211062913728512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 394041763636818214912 cm^-3. The short gate region is of the material Silicon with a length of 0.11 micrometers and it is doped with Boron at a concentration of 998882554980548083712 cm^-3. The long gate region is of the material Germanium with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 744056621736389115904 cm^-3. The drain region is of the material SiGe with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 294195348460452020224 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.11)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t394041763636818214912\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t998882554980548083712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t744056621736389115904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t294195348460452020224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 273638820537885458432 cm^-3. The short gate region is of the material Silicon with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 860865637052707373056 cm^-3. The long gate region is of the material SiGe with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 643031984823969382400 cm^-3. The drain region is of the material SiGe with a length of 0.49 micrometers and it is doped with Boron at a concentration of 277946688716632653824 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.3)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.49)\n(define Ld 0.49)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t273638820537885458432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t860865637052707373056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t643031984823969382400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t277946688716632653824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 675832608511151046656 cm^-3. The short gate region is of the material Diamond with a length of 0.71 micrometers and it is doped with Boron at a concentration of 759614278941477568512 cm^-3. The long gate region is of the material Silicon with a length of 0.27 micrometers and it is doped with Boron at a concentration of 614579480386970714112 cm^-3. The drain region is of the material Silicon with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 313066124628614447104 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.71)\n(define Lgl 0.27)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.43)\n(define Ld 0.43)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t675832608511151046656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t759614278941477568512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t614579480386970714112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t313066124628614447104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 753217497339990376448 cm^-3. The short gate region is of the material Diamond with a length of 0.98 micrometers and it is doped with Boron at a concentration of 256507768142694678528 cm^-3. The long gate region is of the material GaN with a length of 0.34 micrometers and it is doped with Boron at a concentration of 836989378689400569856 cm^-3. The drain region is of the material Germanium with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 218899925364008353792 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.98)\n(define Lgl 0.34)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.76)\n(define Ld 0.76)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t753217497339990376448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t256507768142694678528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t836989378689400569856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t218899925364008353792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 240380856901510103040 cm^-3. The short gate region is of the material Silicon with a length of 0.5 micrometers and it is doped with Boron at a concentration of 854480720555328143360 cm^-3. The long gate region is of the material Diamond with a length of 1.0 micrometers and it is doped with Arsenic at a concentration of 433895675730496192512 cm^-3. The drain region is of the material Diamond with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 672350110548414562304 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.5)\n(define Lgl 1.0)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t240380856901510103040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t854480720555328143360\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t433895675730496192512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t672350110548414562304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 300229736146171330560 cm^-3. The short gate region is of the material Diamond with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 63359111524400234496 cm^-3. The long gate region is of the material Silicon with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 247286904988472868864 cm^-3. The drain region is of the material GaN with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 925946752731279261696 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.82)\n(define Lgl 0.88)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t300229736146171330560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t63359111524400234496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t247286904988472868864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t925946752731279261696\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.29 micrometers and it is doped with Boron at a concentration of 548570377951146016768 cm^-3. The short gate region is of the material Silicon with a length of 0.25 micrometers and it is doped with Boron at a concentration of 541208802721283833856 cm^-3. The long gate region is of the material Silicon with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 297121330234397556736 cm^-3. The drain region is of the material GaN with a length of 0.29 micrometers and it is doped with Boron at a concentration of 61695043558178668544 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.25)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.29)\n(define Ld 0.29)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t548570377951146016768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t541208802721283833856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t297121330234397556736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t61695043558178668544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 763828116693150728192 cm^-3. The short gate region is of the material Germanium with a length of 0.19 micrometers and it is doped with Boron at a concentration of 818340412778146824192 cm^-3. The long gate region is of the material Germanium with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 367764314823330627584 cm^-3. The drain region is of the material Germanium with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 886049317082994835456 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.19)\n(define Lgl 0.49)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.43)\n(define Ld 0.43)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t763828116693150728192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t818340412778146824192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t367764314823330627584\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t886049317082994835456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 603287812809712599040 cm^-3. The short gate region is of the material Diamond with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 861563337161612984320 cm^-3. The long gate region is of the material Diamond with a length of 0.16 micrometers and it is doped with Boron at a concentration of 326655726664248066048 cm^-3. The drain region is of the material GaN with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 187597948271877750784 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.91)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t603287812809712599040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t861563337161612984320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t326655726664248066048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t187597948271877750784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 308116225704929001472 cm^-3. The short gate region is of the material Germanium with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 821386985994008395776 cm^-3. The long gate region is of the material Germanium with a length of 0.13 micrometers and it is doped with Boron at a concentration of 21827940668623417344 cm^-3. The drain region is of the material SiGe with a length of 0.16 micrometers and it is doped with Boron at a concentration of 681879635880692416512 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.35)\n(define Lgl 0.13)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.16)\n(define Ld 0.16)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t308116225704929001472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t821386985994008395776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t21827940668623417344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t681879635880692416512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.66 micrometers and it is doped with Boron at a concentration of 603197996693570322432 cm^-3. The short gate region is of the material GaN with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 533735037542619938816 cm^-3. The long gate region is of the material SiGe with a length of 0.94 micrometers and it is doped with Boron at a concentration of 577788305896214233088 cm^-3. The drain region is of the material SiGe with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 686919028835536207872 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.11)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.66)\n(define Ld 0.66)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t603197996693570322432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t533735037542619938816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t577788305896214233088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t686919028835536207872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 559358632576302579712 cm^-3. The short gate region is of the material Diamond with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 704214317224794390528 cm^-3. The long gate region is of the material SiGe with a length of 0.03 micrometers and it is doped with Boron at a concentration of 257003009755881340928 cm^-3. The drain region is of the material SiGe with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 470824887546139639808 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.14)\n(define Lgl 0.03)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.16)\n(define Ld 0.16)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t559358632576302579712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t704214317224794390528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t257003009755881340928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t470824887546139639808\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 228958226813173432320 cm^-3. The short gate region is of the material Germanium with a length of 1.0 micrometers and it is doped with Boron at a concentration of 875248123079992934400 cm^-3. The long gate region is of the material Diamond with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 543290083736438702080 cm^-3. The drain region is of the material SiGe with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 862424909433494175744 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 1.0)\n(define Lgl 0.59)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t228958226813173432320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t875248123079992934400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t543290083736438702080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t862424909433494175744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 456671868397740883968 cm^-3. The short gate region is of the material Germanium with a length of 0.49 micrometers and it is doped with Boron at a concentration of 791166250666302504960 cm^-3. The long gate region is of the material SiGe with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 670663603839241945088 cm^-3. The drain region is of the material GaN with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 285682019393364328448 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.49)\n(define Lgl 0.67)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.6)\n(define Ld 0.6)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t456671868397740883968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t791166250666302504960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t670663603839241945088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t285682019393364328448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 343666682063994486784 cm^-3. The short gate region is of the material Germanium with a length of 0.49 micrometers and it is doped with Boron at a concentration of 756652964254208098304 cm^-3. The long gate region is of the material GaN with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 534564202921629057024 cm^-3. The drain region is of the material SiGe with a length of 0.45 micrometers and it is doped with Boron at a concentration of 207205302983814250496 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.49)\n(define Lgl 0.85)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t343666682063994486784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t756652964254208098304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t534564202921629057024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t207205302983814250496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.12 micrometers and it is doped with Boron at a concentration of 729097308734395383808 cm^-3. The short gate region is of the material Diamond with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 146681113898852859904 cm^-3. The long gate region is of the material Diamond with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 981957802913761853440 cm^-3. The drain region is of the material GaN with a length of 0.12 micrometers and it is doped with Boron at a concentration of 66719943985511874560 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.84)\n(define Lgl 0.68)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.12)\n(define Ld 0.12)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t729097308734395383808\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t146681113898852859904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t981957802913761853440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t66719943985511874560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 782018153029821923328 cm^-3. The short gate region is of the material Silicon with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 191777819743500435456 cm^-3. The long gate region is of the material Diamond with a length of 0.39 micrometers and it is doped with Boron at a concentration of 158740328954869743616 cm^-3. The drain region is of the material Germanium with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 584369670034426036224 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.99)\n(define Lgl 0.39)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.1)\n(define Ld 0.1)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t782018153029821923328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t191777819743500435456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t158740328954869743616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t584369670034426036224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 972468802047410176000 cm^-3. The short gate region is of the material Germanium with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 638733985162344267776 cm^-3. The long gate region is of the material Silicon with a length of 0.85 micrometers and it is doped with Boron at a concentration of 982589530039472750592 cm^-3. The drain region is of the material Silicon with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 770576822234066714624 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.97)\n(define Lgl 0.85)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t972468802047410176000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t638733985162344267776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t982589530039472750592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t770576822234066714624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.57 micrometers and it is doped with Boron at a concentration of 749127133475046686720 cm^-3. The short gate region is of the material Silicon with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 882052132349538205696 cm^-3. The long gate region is of the material Diamond with a length of 0.17 micrometers and it is doped with Boron at a concentration of 672435623003462172672 cm^-3. The drain region is of the material Germanium with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 729527371542335062016 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.14)\n(define Lgl 0.17)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.57)\n(define Ld 0.57)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t749127133475046686720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t882052132349538205696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t672435623003462172672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t729527371542335062016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.89 micrometers and it is doped with Boron at a concentration of 840020142397210492928 cm^-3. The short gate region is of the material Germanium with a length of 0.7 micrometers and it is doped with Boron at a concentration of 327847407428991057920 cm^-3. The long gate region is of the material Germanium with a length of 0.1 micrometers and it is doped with Boron at a concentration of 21886893172580962304 cm^-3. The drain region is of the material SiGe with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 88073348808673787904 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.7)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.89)\n(define Ld 0.89)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t840020142397210492928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t327847407428991057920\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t21886893172580962304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t88073348808673787904\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 71101777570832760832 cm^-3. The short gate region is of the material Silicon with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 23432827574201044992 cm^-3. The long gate region is of the material Silicon with a length of 0.62 micrometers and it is doped with Boron at a concentration of 329654925906237456384 cm^-3. The drain region is of the material Diamond with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 739187356685218873344 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.33)\n(define Lgl 0.62)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t71101777570832760832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t23432827574201044992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t329654925906237456384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t739187356685218873344\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 550576167803476115456 cm^-3. The short gate region is of the material Germanium with a length of 0.03 micrometers and it is doped with Boron at a concentration of 200482910035138117632 cm^-3. The long gate region is of the material SiGe with a length of 0.31 micrometers and it is doped with Boron at a concentration of 953169672895222251520 cm^-3. The drain region is of the material Silicon with a length of 0.24 micrometers and it is doped with Boron at a concentration of 184825627483614216192 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.03)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.24)\n(define Ld 0.24)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t550576167803476115456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t200482910035138117632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t953169672895222251520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t184825627483614216192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.78 micrometers and it is doped with Boron at a concentration of 308264487937291976704 cm^-3. The short gate region is of the material GaN with a length of 0.27 micrometers and it is doped with Boron at a concentration of 359160628817845420032 cm^-3. The long gate region is of the material GaN with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 962843292299931549696 cm^-3. The drain region is of the material Diamond with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 65953689696202661888 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.27)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t308264487937291976704\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t359160628817845420032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t962843292299931549696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t65953689696202661888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 950280553330992742400 cm^-3. The short gate region is of the material Silicon with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 694384256831661932544 cm^-3. The long gate region is of the material GaN with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 749767465276946907136 cm^-3. The drain region is of the material Germanium with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 62893812106514890752 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.67)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.63)\n(define Ld 0.63)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t950280553330992742400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t694384256831661932544\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t749767465276946907136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t62893812106514890752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 167212746467520315392 cm^-3. The short gate region is of the material Silicon with a length of 1.0 micrometers and it is doped with Arsenic at a concentration of 584265905335378640896 cm^-3. The long gate region is of the material SiGe with a length of 0.95 micrometers and it is doped with Boron at a concentration of 997641404580658413568 cm^-3. The drain region is of the material Diamond with a length of 0.51 micrometers and it is doped with Boron at a concentration of 461161768048612999168 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 1.0)\n(define Lgl 0.95)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.51)\n(define Ld 0.51)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t167212746467520315392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t584265905335378640896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t997641404580658413568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t461161768048612999168\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 940580629469258973184 cm^-3. The short gate region is of the material Germanium with a length of 0.36 micrometers and it is doped with Boron at a concentration of 239547033296161832960 cm^-3. The long gate region is of the material Diamond with a length of 0.99 micrometers and it is doped with Boron at a concentration of 498936581030361300992 cm^-3. The drain region is of the material SiGe with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 234564424397343326208 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.36)\n(define Lgl 0.99)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.57)\n(define Ld 0.57)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t940580629469258973184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t239547033296161832960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t498936581030361300992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t234564424397343326208\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 903350749717358051328 cm^-3. The short gate region is of the material SiGe with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 602930611224512036864 cm^-3. The long gate region is of the material SiGe with a length of 0.3 micrometers and it is doped with Boron at a concentration of 723494206748763750400 cm^-3. The drain region is of the material GaN with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 900642860730938818560 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.04)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.23)\n(define Ld 0.23)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t903350749717358051328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t602930611224512036864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t723494206748763750400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t900642860730938818560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.59 micrometers and it is doped with Boron at a concentration of 638266320858457440256 cm^-3. The short gate region is of the material Silicon with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 652080612306122309632 cm^-3. The long gate region is of the material Silicon with a length of 0.89 micrometers and it is doped with Boron at a concentration of 28633857392238567424 cm^-3. The drain region is of the material SiGe with a length of 0.59 micrometers and it is doped with Boron at a concentration of 24190869580971008000 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.63)\n(define Lgl 0.89)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t638266320858457440256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t652080612306122309632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t28633857392238567424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t24190869580971008000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.78 micrometers and it is doped with Boron at a concentration of 457144118132856586240 cm^-3. The short gate region is of the material GaN with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 398387409675028267008 cm^-3. The long gate region is of the material SiGe with a length of 0.84 micrometers and it is doped with Boron at a concentration of 965114302212019060736 cm^-3. The drain region is of the material Diamond with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 677835572786201231360 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.85)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t457144118132856586240\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t398387409675028267008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t965114302212019060736\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t677835572786201231360\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 699087936344067932160 cm^-3. The short gate region is of the material SiGe with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 175647605175017144320 cm^-3. The long gate region is of the material SiGe with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 849639902222054326272 cm^-3. The drain region is of the material SiGe with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 275042948434660098048 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.43)\n(define Lgl 0.25)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.77)\n(define Ld 0.77)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t699087936344067932160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t175647605175017144320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t849639902222054326272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t275042948434660098048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 53669921189399437312 cm^-3. The short gate region is of the material SiGe with a length of 0.33 micrometers and it is doped with Boron at a concentration of 231627450629334204416 cm^-3. The long gate region is of the material Germanium with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 798603329142066118656 cm^-3. The drain region is of the material GaN with a length of 0.66 micrometers and it is doped with Boron at a concentration of 266212953970307923968 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.33)\n(define Lgl 0.43)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.66)\n(define Ld 0.66)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t53669921189399437312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t231627450629334204416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t798603329142066118656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t266212953970307923968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.83 micrometers and it is doped with Boron at a concentration of 145837153032340160512 cm^-3. The short gate region is of the material Diamond with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 715347770308616126464 cm^-3. The long gate region is of the material Silicon with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 722500306478768717824 cm^-3. The drain region is of the material SiGe with a length of 0.83 micrometers and it is doped with Boron at a concentration of 521032229499731312640 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.15)\n(define Lgl 0.73)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.83)\n(define Ld 0.83)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t145837153032340160512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t715347770308616126464\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t722500306478768717824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t521032229499731312640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 239053050742445342720 cm^-3. The short gate region is of the material Silicon with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 747254488707966566400 cm^-3. The long gate region is of the material Silicon with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 245898728798812831744 cm^-3. The drain region is of the material Diamond with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 336492309676931678208 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.02)\n(define Lgl 0.8)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.05)\n(define Ld 0.05)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t239053050742445342720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t747254488707966566400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t245898728798812831744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t336492309676931678208\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 429021521813114716160 cm^-3. The short gate region is of the material Silicon with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 611002740222331322368 cm^-3. The long gate region is of the material SiGe with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 336629342781266853888 cm^-3. The drain region is of the material GaN with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 65526440595789250560 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.04)\n(define Lgl 0.24)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.47)\n(define Ld 0.47)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t429021521813114716160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t611002740222331322368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t336629342781266853888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t65526440595789250560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 996573794394088538112 cm^-3. The short gate region is of the material Germanium with a length of 0.37 micrometers and it is doped with Arsenic at a concentration of 128748399156957495296 cm^-3. The long gate region is of the material SiGe with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 455434439397253054464 cm^-3. The drain region is of the material GaN with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 230514694451711213568 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.37)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t996573794394088538112\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t128748399156957495296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t455434439397253054464\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t230514694451711213568\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 587065713582515027968 cm^-3. The short gate region is of the material Silicon with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 729748515807452200960 cm^-3. The long gate region is of the material GaN with a length of 0.54 micrometers and it is doped with Boron at a concentration of 887845618468670406656 cm^-3. The drain region is of the material GaN with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 169221775702996647936 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.87)\n(define Lgl 0.54)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t587065713582515027968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t729748515807452200960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t887845618468670406656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t169221775702996647936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 19733085572180180992 cm^-3. The short gate region is of the material Germanium with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 321669307568288694272 cm^-3. The long gate region is of the material Germanium with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 146961258019492282368 cm^-3. The drain region is of the material GaN with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 234220151592395898880 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.22)\n(define Lgl 0.74)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t19733085572180180992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t321669307568288694272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t146961258019492282368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t234220151592395898880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.45 micrometers and it is doped with Boron at a concentration of 537207245853890576384 cm^-3. The short gate region is of the material Diamond with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 152208962710837231616 cm^-3. The long gate region is of the material Diamond with a length of 0.94 micrometers and it is doped with Boron at a concentration of 22442148448060256256 cm^-3. The drain region is of the material Diamond with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 601869089705556312064 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.62)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t537207245853890576384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t152208962710837231616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t22442148448060256256\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t601869089705556312064\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.71 micrometers and it is doped with Boron at a concentration of 91739115143280607232 cm^-3. The short gate region is of the material Silicon with a length of 0.03 micrometers and it is doped with Boron at a concentration of 115472911809622458368 cm^-3. The long gate region is of the material SiGe with a length of 0.34 micrometers and it is doped with Boron at a concentration of 656204745101060997120 cm^-3. The drain region is of the material Silicon with a length of 0.71 micrometers and it is doped with Boron at a concentration of 5675046860944330752 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.03)\n(define Lgl 0.34)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.71)\n(define Ld 0.71)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t91739115143280607232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t115472911809622458368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t656204745101060997120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t5675046860944330752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 717141158664858370048 cm^-3. The short gate region is of the material SiGe with a length of 0.44 micrometers and it is doped with Boron at a concentration of 25517329736500531200 cm^-3. The long gate region is of the material SiGe with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 40055349320255078400 cm^-3. The drain region is of the material GaN with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 96002624559021637632 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.44)\n(define Lgl 0.46)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.79)\n(define Ld 0.79)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t717141158664858370048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t25517329736500531200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t40055349320255078400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t96002624559021637632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 135749940899467542528 cm^-3. The short gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Boron at a concentration of 469963070972196290560 cm^-3. The long gate region is of the material Silicon with a length of 0.46 micrometers and it is doped with Boron at a concentration of 111515728092471410688 cm^-3. The drain region is of the material GaN with a length of 0.77 micrometers and it is doped with Boron at a concentration of 929025894799633940480 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.86)\n(define Lgl 0.46)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.77)\n(define Ld 0.77)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t135749940899467542528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t469963070972196290560\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t111515728092471410688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t929025894799633940480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.68 micrometers and it is doped with Boron at a concentration of 860936472561818927104 cm^-3. The short gate region is of the material Diamond with a length of 0.64 micrometers and it is doped with Boron at a concentration of 406806434600809660416 cm^-3. The long gate region is of the material Germanium with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 377011417145770115072 cm^-3. The drain region is of the material Silicon with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 518197793746228346880 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.64)\n(define Lgl 0.2)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.68)\n(define Ld 0.68)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t860936472561818927104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t406806434600809660416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t377011417145770115072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t518197793746228346880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.94 micrometers and it is doped with Boron at a concentration of 846762892038596722688 cm^-3. The short gate region is of the material Diamond with a length of 0.7 micrometers and it is doped with Boron at a concentration of 623997498474275274752 cm^-3. The long gate region is of the material SiGe with a length of 0.69 micrometers and it is doped with Arsenic at a concentration of 97683700124143190016 cm^-3. The drain region is of the material GaN with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 794795732188343304192 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.7)\n(define Lgl 0.69)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.94)\n(define Ld 0.94)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t846762892038596722688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t623997498474275274752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t97683700124143190016\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t794795732188343304192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 23044044624428642304 cm^-3. The short gate region is of the material Germanium with a length of 0.98 micrometers and it is doped with Arsenic at a concentration of 533209630234978811904 cm^-3. The long gate region is of the material Silicon with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 38589448818920095744 cm^-3. The drain region is of the material Silicon with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 701355820459528421376 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.98)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.41)\n(define Ld 0.41)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t23044044624428642304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t533209630234978811904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t38589448818920095744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t701355820459528421376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 718118884467826229248 cm^-3. The short gate region is of the material GaN with a length of 0.9 micrometers and it is doped with Boron at a concentration of 892149058526469816320 cm^-3. The long gate region is of the material Diamond with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 337113844977409720320 cm^-3. The drain region is of the material Germanium with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 124049627086835859456 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.9)\n(define Lgl 0.45)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.52)\n(define Ld 0.52)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t718118884467826229248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t892149058526469816320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t337113844977409720320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t124049627086835859456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.84 micrometers and it is doped with Boron at a concentration of 428862678913977286656 cm^-3. The short gate region is of the material Germanium with a length of 0.1 micrometers and it is doped with Boron at a concentration of 274679005348702781440 cm^-3. The long gate region is of the material Germanium with a length of 0.62 micrometers and it is doped with Boron at a concentration of 762991994213743460352 cm^-3. The drain region is of the material Germanium with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 75736292047892512768 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.1)\n(define Lgl 0.62)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.84)\n(define Ld 0.84)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t428862678913977286656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t274679005348702781440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t762991994213743460352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t75736292047892512768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 391908722518892740608 cm^-3. The short gate region is of the material SiGe with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 679171318727570489344 cm^-3. The long gate region is of the material SiGe with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 905202065055272796160 cm^-3. The drain region is of the material SiGe with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 990230369320069234688 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.84)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.29)\n(define Ld 0.29)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t391908722518892740608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t679171318727570489344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t905202065055272796160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t990230369320069234688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.17 micrometers and it is doped with Boron at a concentration of 277732154877805101056 cm^-3. The short gate region is of the material Silicon with a length of 0.41 micrometers and it is doped with Boron at a concentration of 599616562941430202368 cm^-3. The long gate region is of the material SiGe with a length of 0.56 micrometers and it is doped with Boron at a concentration of 774356739168578043904 cm^-3. The drain region is of the material Silicon with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 830853415731093700608 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.41)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.17)\n(define Ld 0.17)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t277732154877805101056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t599616562941430202368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t774356739168578043904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t830853415731093700608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.66 micrometers and it is doped with Boron at a concentration of 847768758220121702400 cm^-3. The short gate region is of the material SiGe with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 360907996680259502080 cm^-3. The long gate region is of the material Silicon with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 594495521947867414528 cm^-3. The drain region is of the material GaN with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 956960457895344865280 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.95)\n(define Lgl 0.29)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.66)\n(define Ld 0.66)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t847768758220121702400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t360907996680259502080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t594495521947867414528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t956960457895344865280\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 859945759837944283136 cm^-3. The short gate region is of the material Silicon with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 222523146511535177728 cm^-3. The long gate region is of the material Silicon with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 291881166767211905024 cm^-3. The drain region is of the material Germanium with a length of 0.46 micrometers and it is doped with Boron at a concentration of 582864327482161364992 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.84)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t859945759837944283136\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t222523146511535177728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t291881166767211905024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t582864327482161364992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 666921361780187856896 cm^-3. The short gate region is of the material SiGe with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 660346468887671996416 cm^-3. The long gate region is of the material Germanium with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 668422751052155715584 cm^-3. The drain region is of the material Silicon with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 696906345155666771968 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.07)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.74)\n(define Ld 0.74)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t666921361780187856896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t660346468887671996416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t668422751052155715584\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t696906345155666771968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 594826961688117379072 cm^-3. The short gate region is of the material Silicon with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 388861191648893861888 cm^-3. The long gate region is of the material Silicon with a length of 0.87 micrometers and it is doped with Boron at a concentration of 169873669213340598272 cm^-3. The drain region is of the material Diamond with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 297840446562418819072 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.47)\n(define Lgl 0.87)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.01)\n(define Ld 0.01)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t594826961688117379072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t388861191648893861888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t169873669213340598272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t297840446562418819072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 41208715277508165632 cm^-3. The short gate region is of the material GaN with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 811131042589917315072 cm^-3. The long gate region is of the material Silicon with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 162824186744263245824 cm^-3. The drain region is of the material SiGe with a length of 0.53 micrometers and it is doped with Boron at a concentration of 23614722895260319744 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.12)\n(define Lgl 0.58)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t41208715277508165632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t811131042589917315072\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t162824186744263245824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t23614722895260319744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.98 micrometers and it is doped with Boron at a concentration of 136587040896577552384 cm^-3. The short gate region is of the material SiGe with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 35236399681638567936 cm^-3. The long gate region is of the material GaN with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 260091730844990734336 cm^-3. The drain region is of the material Silicon with a length of 0.98 micrometers and it is doped with Phosphorus at a concentration of 523106110386862817280 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.87)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.98)\n(define Ld 0.98)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t136587040896577552384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t35236399681638567936\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t260091730844990734336\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t523106110386862817280\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.46 micrometers and it is doped with Boron at a concentration of 955635193003503124480 cm^-3. The short gate region is of the material Silicon with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 355924339521491959808 cm^-3. The long gate region is of the material Silicon with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 83336272909715685376 cm^-3. The drain region is of the material GaN with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 421303115855754690560 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.45)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t955635193003503124480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t355924339521491959808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t83336272909715685376\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t421303115855754690560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 297121910675631636480 cm^-3. The short gate region is of the material Germanium with a length of 0.16 micrometers and it is doped with Boron at a concentration of 253026589183100452864 cm^-3. The long gate region is of the material Silicon with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 273961128860827648000 cm^-3. The drain region is of the material SiGe with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 899874580092800729088 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.16)\n(define Lgl 0.58)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.55)\n(define Ld 0.55)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t297121910675631636480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t253026589183100452864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t273961128860827648000\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t899874580092800729088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 519820188274777391104 cm^-3. The short gate region is of the material Silicon with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 609538470754121547776 cm^-3. The long gate region is of the material Germanium with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 329418055128836997120 cm^-3. The drain region is of the material Germanium with a length of 0.62 micrometers and it is doped with Boron at a concentration of 801878456667216281600 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.39)\n(define Lgl 0.24)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t519820188274777391104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t609538470754121547776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t329418055128836997120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t801878456667216281600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 167445322169655328768 cm^-3. The short gate region is of the material Diamond with a length of 0.52 micrometers and it is doped with Boron at a concentration of 409223846022429802496 cm^-3. The long gate region is of the material Germanium with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 739287635015290847232 cm^-3. The drain region is of the material Germanium with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 356165949568185663488 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.52)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t167445322169655328768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t409223846022429802496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t739287635015290847232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t356165949568185663488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 1.0 micrometers and it is doped with Arsenic at a concentration of 493993890595410673664 cm^-3. The short gate region is of the material Diamond with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 49808196123643772928 cm^-3. The long gate region is of the material SiGe with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 177322486713735905280 cm^-3. The drain region is of the material Silicon with a length of 1.0 micrometers and it is doped with Arsenic at a concentration of 447036919179994988544 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.05)\n(define Lgl 0.62)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 1.0)\n(define Ld 1.0)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t493993890595410673664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t49808196123643772928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t177322486713735905280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t447036919179994988544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 824002870221973487616 cm^-3. The short gate region is of the material GaN with a length of 0.4 micrometers and it is doped with Boron at a concentration of 639953428019005620224 cm^-3. The long gate region is of the material Diamond with a length of 0.42 micrometers and it is doped with Boron at a concentration of 637655937893888950272 cm^-3. The drain region is of the material Germanium with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 757223699006170726400 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.4)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.02)\n(define Ld 0.02)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t824002870221973487616\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t639953428019005620224\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t637655937893888950272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t757223699006170726400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.18 micrometers and it is doped with Boron at a concentration of 974701453415477411840 cm^-3. The short gate region is of the material GaN with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 198550424335893495808 cm^-3. The long gate region is of the material Silicon with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 524614188954268860416 cm^-3. The drain region is of the material Silicon with a length of 0.18 micrometers and it is doped with Boron at a concentration of 862485612594400985088 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.71)\n(define Lgl 0.71)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.18)\n(define Ld 0.18)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t974701453415477411840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t198550424335893495808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t524614188954268860416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t862485612594400985088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 939971281751891640320 cm^-3. The short gate region is of the material Diamond with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 615857245489410605056 cm^-3. The long gate region is of the material Diamond with a length of 0.31 micrometers and it is doped with Boron at a concentration of 579057494456487641088 cm^-3. The drain region is of the material SiGe with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 625394536508718579712 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.32)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.24)\n(define Ld 0.24)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t939971281751891640320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t615857245489410605056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t579057494456487641088\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t625394536508718579712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 180865638623089393664 cm^-3. The short gate region is of the material Germanium with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 8613546771167802368 cm^-3. The long gate region is of the material Germanium with a length of 0.87 micrometers and it is doped with Boron at a concentration of 65387693278844731392 cm^-3. The drain region is of the material Diamond with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 982000906753794637824 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.25)\n(define Lgl 0.87)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.29)\n(define Ld 0.29)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t180865638623089393664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t8613546771167802368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t65387693278844731392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t982000906753794637824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 1.0 micrometers and it is doped with Phosphorus at a concentration of 636895954589349969920 cm^-3. The short gate region is of the material Silicon with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 377092622374182453248 cm^-3. The long gate region is of the material Silicon with a length of 0.08 micrometers and it is doped with Boron at a concentration of 874352445630919475200 cm^-3. The drain region is of the material SiGe with a length of 1.0 micrometers and it is doped with Phosphorus at a concentration of 398727694989773504512 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.14)\n(define Lgl 0.08)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 1.0)\n(define Ld 1.0)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t636895954589349969920\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t377092622374182453248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t874352445630919475200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t398727694989773504512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 729715699945032384512 cm^-3. The short gate region is of the material SiGe with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 816686009575450738688 cm^-3. The long gate region is of the material GaN with a length of 0.73 micrometers and it is doped with Boron at a concentration of 545333033153100120064 cm^-3. The drain region is of the material SiGe with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 393957371734909124608 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.93)\n(define Lgl 0.73)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.51)\n(define Ld 0.51)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t729715699945032384512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t816686009575450738688\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t545333033153100120064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t393957371734909124608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 307711428869655101440 cm^-3. The short gate region is of the material Diamond with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 154040188159084101632 cm^-3. The long gate region is of the material Silicon with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 167646887157971353600 cm^-3. The drain region is of the material Silicon with a length of 0.89 micrometers and it is doped with Boron at a concentration of 561728433643474780160 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.42)\n(define Lgl 0.26)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.89)\n(define Ld 0.89)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t307711428869655101440\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t154040188159084101632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t167646887157971353600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t561728433643474780160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 724157002893768261632 cm^-3. The short gate region is of the material Silicon with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 576879436749490094080 cm^-3. The long gate region is of the material Diamond with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 320731630802994724864 cm^-3. The drain region is of the material SiGe with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 897106923596789579776 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.59)\n(define Lgl 0.68)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.39)\n(define Ld 0.39)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t724157002893768261632\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t576879436749490094080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t320731630802994724864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t897106923596789579776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 519007245578454433792 cm^-3. The short gate region is of the material Silicon with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 872668821365862039552 cm^-3. The long gate region is of the material GaN with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 810692799171544875008 cm^-3. The drain region is of the material Diamond with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 234292374449834983424 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.56)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t519007245578454433792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t872668821365862039552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t810692799171544875008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t234292374449834983424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 786105062808674107392 cm^-3. The short gate region is of the material SiGe with a length of 0.36 micrometers and it is doped with Phosphorus at a concentration of 46175643716859936768 cm^-3. The long gate region is of the material SiGe with a length of 0.68 micrometers and it is doped with Boron at a concentration of 256733886176447594496 cm^-3. The drain region is of the material Diamond with a length of 0.22 micrometers and it is doped with Boron at a concentration of 707304192804274307072 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.36)\n(define Lgl 0.68)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.22)\n(define Ld 0.22)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t786105062808674107392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t46175643716859936768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t256733886176447594496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t707304192804274307072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 596418957311501926400 cm^-3. The short gate region is of the material Germanium with a length of 0.9 micrometers and it is doped with Boron at a concentration of 312532750425485213696 cm^-3. The long gate region is of the material GaN with a length of 0.42 micrometers and it is doped with Boron at a concentration of 70082047631251865600 cm^-3. The drain region is of the material GaN with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 228355196166305120256 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.9)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.49)\n(define Ld 0.49)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t596418957311501926400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t312532750425485213696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t70082047631251865600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t228355196166305120256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 399830490206736089088 cm^-3. The short gate region is of the material Germanium with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 260281025116608561152 cm^-3. The long gate region is of the material Diamond with a length of 0.16 micrometers and it is doped with Boron at a concentration of 283427785658275233792 cm^-3. The drain region is of the material Germanium with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 806777416865058783232 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.31)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t399830490206736089088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t260281025116608561152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t283427785658275233792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t806777416865058783232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 201654318327258873856 cm^-3. The short gate region is of the material SiGe with a length of 0.29 micrometers and it is doped with Boron at a concentration of 58838638735771885568 cm^-3. The long gate region is of the material Germanium with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 301937568530616418304 cm^-3. The drain region is of the material GaN with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 895720038431828475904 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.29)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.87)\n(define Ld 0.87)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t201654318327258873856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t58838638735771885568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t301937568530616418304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t895720038431828475904\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 237699587190453075968 cm^-3. The short gate region is of the material Silicon with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 400226357027410280448 cm^-3. The long gate region is of the material GaN with a length of 0.65 micrometers and it is doped with Boron at a concentration of 370634299510467330048 cm^-3. The drain region is of the material Germanium with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 856242505760515817472 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.6)\n(define Lgl 0.65)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t237699587190453075968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t400226357027410280448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t370634299510467330048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t856242505760515817472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 531898824986679574528 cm^-3. The short gate region is of the material Diamond with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 250817457501707436032 cm^-3. The long gate region is of the material GaN with a length of 0.66 micrometers and it is doped with Boron at a concentration of 221249570324818526208 cm^-3. The drain region is of the material SiGe with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 223869273848960614400 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.64)\n(define Lgl 0.66)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.91)\n(define Ld 0.91)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t531898824986679574528\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t250817457501707436032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t221249570324818526208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t223869273848960614400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.13 micrometers and it is doped with Boron at a concentration of 383131945387761205248 cm^-3. The short gate region is of the material Silicon with a length of 0.84 micrometers and it is doped with Boron at a concentration of 474062270103001890816 cm^-3. The long gate region is of the material Germanium with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 949611772510946459648 cm^-3. The drain region is of the material SiGe with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 579957598368825344000 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.84)\n(define Lgl 0.03)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.13)\n(define Ld 0.13)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t383131945387761205248\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t474062270103001890816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t949611772510946459648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t579957598368825344000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 519352362799362867200 cm^-3. The short gate region is of the material Diamond with a length of 0.83 micrometers and it is doped with Boron at a concentration of 707638753158436093952 cm^-3. The long gate region is of the material Silicon with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 43355435374831362048 cm^-3. The drain region is of the material SiGe with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 258193896471551377408 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.83)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.73)\n(define Ld 0.73)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t519352362799362867200\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t707638753158436093952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t43355435374831362048\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t258193896471551377408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 587001038609384865792 cm^-3. The short gate region is of the material SiGe with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 642591885387633393664 cm^-3. The long gate region is of the material SiGe with a length of 0.53 micrometers and it is doped with Boron at a concentration of 623333669068285411328 cm^-3. The drain region is of the material GaN with a length of 0.21 micrometers and it is doped with Boron at a concentration of 75085241681551474688 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.26)\n(define Lgl 0.53)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.21)\n(define Ld 0.21)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t587001038609384865792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t642591885387633393664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t623333669068285411328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t75085241681551474688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 130332417607730774016 cm^-3. The short gate region is of the material GaN with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 383443027605712273408 cm^-3. The long gate region is of the material Silicon with a length of 0.92 micrometers and it is doped with Boron at a concentration of 973166590171056570368 cm^-3. The drain region is of the material Diamond with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 952407707711023874048 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.05)\n(define Lgl 0.92)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.2)\n(define Ld 0.2)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t130332417607730774016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t383443027605712273408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t973166590171056570368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t952407707711023874048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 494788111936093159424 cm^-3. The short gate region is of the material GaN with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 432952698988694863872 cm^-3. The long gate region is of the material Germanium with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 987520176649351200768 cm^-3. The drain region is of the material Silicon with a length of 0.69 micrometers and it is doped with Boron at a concentration of 405453215239146176512 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.8)\n(define Lgl 0.5)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.69)\n(define Ld 0.69)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t494788111936093159424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t432952698988694863872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t987520176649351200768\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t405453215239146176512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.42 micrometers and it is doped with Boron at a concentration of 432672199906883272704 cm^-3. The short gate region is of the material SiGe with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 695084947455102287872 cm^-3. The long gate region is of the material GaN with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 265149936013188562944 cm^-3. The drain region is of the material GaN with a length of 0.42 micrometers and it is doped with Boron at a concentration of 423238819946853171200 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.4)\n(define Lgl 0.29)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.42)\n(define Ld 0.42)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t432672199906883272704\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t695084947455102287872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t265149936013188562944\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t423238819946853171200\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 809745643885947125760 cm^-3. The short gate region is of the material Diamond with a length of 0.13 micrometers and it is doped with Boron at a concentration of 352916730936146657280 cm^-3. The long gate region is of the material Silicon with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 465141565960327397376 cm^-3. The drain region is of the material SiGe with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 412808941725514858496 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.13)\n(define Lgl 0.48)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t809745643885947125760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t352916730936146657280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t465141565960327397376\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t412808941725514858496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.64 micrometers and it is doped with Boron at a concentration of 321588279146404904960 cm^-3. The short gate region is of the material Diamond with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 642401846349056311296 cm^-3. The long gate region is of the material Silicon with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 538125946834889211904 cm^-3. The drain region is of the material Diamond with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 309544238999474012160 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.42)\n(define Lgl 0.22)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.64)\n(define Ld 0.64)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t321588279146404904960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t642401846349056311296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t538125946834889211904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t309544238999474012160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 346848375235826941952 cm^-3. The short gate region is of the material Diamond with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 371535898637466468352 cm^-3. The long gate region is of the material Germanium with a length of 0.18 micrometers and it is doped with Arsenic at a concentration of 517663208698823049216 cm^-3. The drain region is of the material Silicon with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 410697168691183616000 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.55)\n(define Lgl 0.18)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t346848375235826941952\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t371535898637466468352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t517663208698823049216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t410697168691183616000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 80406925659221344256 cm^-3. The short gate region is of the material Diamond with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 828621822661356552192 cm^-3. The long gate region is of the material Silicon with a length of 0.42 micrometers and it is doped with Boron at a concentration of 173954344365058097152 cm^-3. The drain region is of the material SiGe with a length of 0.64 micrometers and it is doped with Boron at a concentration of 381101940493151109120 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.26)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.64)\n(define Ld 0.64)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t80406925659221344256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t828621822661356552192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t173954344365058097152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t381101940493151109120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.35 micrometers and it is doped with Boron at a concentration of 377013054895160295424 cm^-3. The short gate region is of the material Germanium with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 43755865814637182976 cm^-3. The long gate region is of the material GaN with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 636329082337986347008 cm^-3. The drain region is of the material Germanium with a length of 0.35 micrometers and it is doped with Boron at a concentration of 430326375574374711296 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.61)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t377013054895160295424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t43755865814637182976\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t636329082337986347008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t430326375574374711296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.02 micrometers and it is doped with Boron at a concentration of 538395429326974746624 cm^-3. The short gate region is of the material Germanium with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 92130369604782129152 cm^-3. The long gate region is of the material Silicon with a length of 0.03 micrometers and it is doped with Boron at a concentration of 332428491256175656960 cm^-3. The drain region is of the material GaN with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 450518705910509862912 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.08)\n(define Lgl 0.03)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.02)\n(define Ld 0.02)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t538395429326974746624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t92130369604782129152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t332428491256175656960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t450518705910509862912\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.06 micrometers and it is doped with Boron at a concentration of 120908705960283996160 cm^-3. The short gate region is of the material GaN with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 528489494864825679872 cm^-3. The long gate region is of the material SiGe with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 362122264246381182976 cm^-3. The drain region is of the material Silicon with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 25668330400763138048 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.39)\n(define Lgl 0.76)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.06)\n(define Ld 0.06)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t120908705960283996160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t528489494864825679872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t362122264246381182976\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t25668330400763138048\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.14 micrometers and it is doped with Boron at a concentration of 538215417227968380928 cm^-3. The short gate region is of the material GaN with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 716206519536354066432 cm^-3. The long gate region is of the material GaN with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 391254856855780327424 cm^-3. The drain region is of the material GaN with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 587977717620131495936 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.03)\n(define Lgl 0.31)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.14)\n(define Ld 0.14)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t538215417227968380928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t716206519536354066432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t391254856855780327424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t587977717620131495936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.17 micrometers and it is doped with Boron at a concentration of 587536944476538798080 cm^-3. The short gate region is of the material SiGe with a length of 0.28 micrometers and it is doped with Boron at a concentration of 333427910715417559040 cm^-3. The long gate region is of the material Germanium with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 303710953490449301504 cm^-3. The drain region is of the material SiGe with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 9468254319310911488 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.28)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.17)\n(define Ld 0.17)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t587536944476538798080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t333427910715417559040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t303710953490449301504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t9468254319310911488\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 924392480191770394624 cm^-3. The short gate region is of the material GaN with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 655895312353145257984 cm^-3. The long gate region is of the material Silicon with a length of 0.61 micrometers and it is doped with Boron at a concentration of 797862089041523900416 cm^-3. The drain region is of the material SiGe with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 977084922582311370752 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.57)\n(define Lgl 0.61)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.77)\n(define Ld 0.77)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t924392480191770394624\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t655895312353145257984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t797862089041523900416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t977084922582311370752\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 514545524169917202432 cm^-3. The short gate region is of the material SiGe with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 856358440280804687872 cm^-3. The long gate region is of the material Germanium with a length of 0.07 micrometers and it is doped with Boron at a concentration of 933243115904783089664 cm^-3. The drain region is of the material Silicon with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 396718860891801649152 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.87)\n(define Lgl 0.07)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.5)\n(define Ld 0.5)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t514545524169917202432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t856358440280804687872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t933243115904783089664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t396718860891801649152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 63228914234608222208 cm^-3. The short gate region is of the material Diamond with a length of 0.12 micrometers and it is doped with Arsenic at a concentration of 325306263605525217280 cm^-3. The long gate region is of the material Diamond with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 570802039850732748800 cm^-3. The drain region is of the material SiGe with a length of 0.53 micrometers and it is doped with Boron at a concentration of 748283922541198966784 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.12)\n(define Lgl 0.64)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t63228914234608222208\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t325306263605525217280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t570802039850732748800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t748283922541198966784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 636929072893773611008 cm^-3. The short gate region is of the material Germanium with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 361163470257003429888 cm^-3. The long gate region is of the material GaN with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 172047645848134123520 cm^-3. The drain region is of the material SiGe with a length of 0.34 micrometers and it is doped with Boron at a concentration of 508134257012552892416 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.43)\n(define Lgl 0.94)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.34)\n(define Ld 0.34)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t636929072893773611008\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t361163470257003429888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t172047645848134123520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t508134257012552892416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 49478895145433112576 cm^-3. The short gate region is of the material Germanium with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 855639831858078941184 cm^-3. The long gate region is of the material GaN with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 230302698872890556416 cm^-3. The drain region is of the material Germanium with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 260973363527885127680 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.25)\n(define Lgl 0.33)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.62)\n(define Ld 0.62)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t49478895145433112576\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t855639831858078941184\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t230302698872890556416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t260973363527885127680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 228635797992604631040 cm^-3. The short gate region is of the material Silicon with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 138149998951855423488 cm^-3. The long gate region is of the material GaN with a length of 0.45 micrometers and it is doped with Boron at a concentration of 158113356626625953792 cm^-3. The drain region is of the material SiGe with a length of 0.86 micrometers and it is doped with Boron at a concentration of 169258378456421236736 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.02)\n(define Lgl 0.45)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.86)\n(define Ld 0.86)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t228635797992604631040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t138149998951855423488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t158113356626625953792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t169258378456421236736\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 28839687570079129600 cm^-3. The short gate region is of the material Diamond with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 557758643378641829888 cm^-3. The long gate region is of the material Germanium with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 73537803335582261248 cm^-3. The drain region is of the material GaN with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 697914629250669346816 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.05)\n(define Lgl 0.18)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.93)\n(define Ld 0.93)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t28839687570079129600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t557758643378641829888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t73537803335582261248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t697914629250669346816\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 246591957220449189888 cm^-3. The short gate region is of the material SiGe with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 776892414802574180352 cm^-3. The long gate region is of the material Germanium with a length of 0.93 micrometers and it is doped with Boron at a concentration of 483728551541961654272 cm^-3. The drain region is of the material GaN with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 584905976653176897536 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.4)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.41)\n(define Ld 0.41)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t246591957220449189888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t776892414802574180352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t483728551541961654272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t584905976653176897536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 337433883098467532800 cm^-3. The short gate region is of the material Germanium with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 387766569625938427904 cm^-3. The long gate region is of the material Silicon with a length of 0.98 micrometers and it is doped with Arsenic at a concentration of 354372836274964791296 cm^-3. The drain region is of the material Germanium with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 512278944160225296384 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.89)\n(define Lgl 0.98)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.51)\n(define Ld 0.51)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t337433883098467532800\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t387766569625938427904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t354372836274964791296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t512278944160225296384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 961629631473346674688 cm^-3. The short gate region is of the material GaN with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 559730005563020673024 cm^-3. The long gate region is of the material SiGe with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 883601952293428002816 cm^-3. The drain region is of the material SiGe with a length of 0.82 micrometers and it is doped with Boron at a concentration of 978055718758537625600 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.61)\n(define Lgl 0.51)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.82)\n(define Ld 0.82)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t961629631473346674688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t559730005563020673024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t883601952293428002816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t978055718758537625600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.27 micrometers and it is doped with Boron at a concentration of 682935065850443595776 cm^-3. The short gate region is of the material Germanium with a length of 0.2 micrometers and it is doped with Boron at a concentration of 840349445320280244224 cm^-3. The long gate region is of the material GaN with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 303993502538110205952 cm^-3. The drain region is of the material Silicon with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 308769016675696115712 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.2)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.27)\n(define Ld 0.27)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t682935065850443595776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t840349445320280244224\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t303993502538110205952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t308769016675696115712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 264829838761362063360 cm^-3. The short gate region is of the material Germanium with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 789131076914183798784 cm^-3. The long gate region is of the material Germanium with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 114892903406278803456 cm^-3. The drain region is of the material SiGe with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 753254145809764450304 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.93)\n(define Lgl 0.67)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.25)\n(define Ld 0.25)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t264829838761362063360\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t789131076914183798784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t114892903406278803456\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t753254145809764450304\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.56 micrometers and it is doped with Boron at a concentration of 140996585766172999680 cm^-3. The short gate region is of the material GaN with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 458372456073929424896 cm^-3. The long gate region is of the material Diamond with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 575975765359643590656 cm^-3. The drain region is of the material Silicon with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 319763739110259818496 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.63)\n(define Lgl 0.96)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.56)\n(define Ld 0.56)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t140996585766172999680\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t458372456073929424896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t575975765359643590656\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t319763739110259818496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 662444378997891006464 cm^-3. The short gate region is of the material SiGe with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 491680301462594125824 cm^-3. The long gate region is of the material SiGe with a length of 0.98 micrometers and it is doped with Boron at a concentration of 698083342778741293056 cm^-3. The drain region is of the material Silicon with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 483229094958614446080 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.13)\n(define Lgl 0.98)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.76)\n(define Ld 0.76)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t662444378997891006464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t491680301462594125824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t698083342778741293056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t483229094958614446080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.88 micrometers and it is doped with Boron at a concentration of 574810957523351371776 cm^-3. The short gate region is of the material Germanium with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 69127821825275666432 cm^-3. The long gate region is of the material Diamond with a length of 0.99 micrometers and it is doped with Boron at a concentration of 763987664261553455104 cm^-3. The drain region is of the material SiGe with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 367728321934737014784 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.04)\n(define Lgl 0.99)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.88)\n(define Ld 0.88)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t574810957523351371776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t69127821825275666432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t763987664261553455104\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t367728321934737014784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 24036180168425054208 cm^-3. The short gate region is of the material Diamond with a length of 0.12 micrometers and it is doped with Phosphorus at a concentration of 473716478565151277056 cm^-3. The long gate region is of the material Germanium with a length of 0.74 micrometers and it is doped with Boron at a concentration of 376658155997852729344 cm^-3. The drain region is of the material Silicon with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 17193796201051297792 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.12)\n(define Lgl 0.74)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.26)\n(define Ld 0.26)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t24036180168425054208\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t473716478565151277056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t376658155997852729344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t17193796201051297792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.04 micrometers and it is doped with Boron at a concentration of 670168975793327964160 cm^-3. The short gate region is of the material Diamond with a length of 0.21 micrometers and it is doped with Boron at a concentration of 575451711812564025344 cm^-3. The long gate region is of the material Germanium with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 99397871327135531008 cm^-3. The drain region is of the material Diamond with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 98879324284319924224 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.21)\n(define Lgl 0.9)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.04)\n(define Ld 0.04)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t670168975793327964160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t575451711812564025344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t99397871327135531008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t98879324284319924224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 387109380577216036864 cm^-3. The short gate region is of the material Silicon with a length of 0.48 micrometers and it is doped with Boron at a concentration of 102587026974202642432 cm^-3. The long gate region is of the material GaN with a length of 0.54 micrometers and it is doped with Boron at a concentration of 280168954294632873984 cm^-3. The drain region is of the material SiGe with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 920166357028683644928 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.48)\n(define Lgl 0.54)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.8)\n(define Ld 0.8)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t387109380577216036864\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t102587026974202642432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t280168954294632873984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t920166357028683644928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 408335715241639936000 cm^-3. The short gate region is of the material SiGe with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 884047461838040727552 cm^-3. The long gate region is of the material Silicon with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 839601326658511175680 cm^-3. The drain region is of the material Germanium with a length of 0.7 micrometers and it is doped with Boron at a concentration of 968881517992009531392 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.56)\n(define Lgl 0.23)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.7)\n(define Ld 0.7)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t408335715241639936000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t884047461838040727552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t839601326658511175680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t968881517992009531392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.33 micrometers and it is doped with Boron at a concentration of 901596539574103572480 cm^-3. The short gate region is of the material Silicon with a length of 0.63 micrometers and it is doped with Phosphorus at a concentration of 918776771342078443520 cm^-3. The long gate region is of the material GaN with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 673719800634013253632 cm^-3. The drain region is of the material Silicon with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 72842641882670882816 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.63)\n(define Lgl 0.97)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t901596539574103572480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t918776771342078443520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t673719800634013253632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t72842641882670882816\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 917593799624363474944 cm^-3. The short gate region is of the material GaN with a length of 0.85 micrometers and it is doped with Boron at a concentration of 154271754916007575552 cm^-3. The long gate region is of the material GaN with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 333176960490332749824 cm^-3. The drain region is of the material Diamond with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 607392709118071144448 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.85)\n(define Lgl 0.22)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t917593799624363474944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t154271754916007575552\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t333176960490332749824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t607392709118071144448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 922569377625862569984 cm^-3. The short gate region is of the material SiGe with a length of 0.47 micrometers and it is doped with Boron at a concentration of 254466440216558665728 cm^-3. The long gate region is of the material Germanium with a length of 0.48 micrometers and it is doped with Boron at a concentration of 369173729615467511808 cm^-3. The drain region is of the material Silicon with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 559218451170193571840 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.47)\n(define Lgl 0.48)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.07)\n(define Ld 0.07)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t922569377625862569984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t254466440216558665728\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t369173729615467511808\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t559218451170193571840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.75 micrometers and it is doped with Boron at a concentration of 376612847265663287296 cm^-3. The short gate region is of the material GaN with a length of 0.41 micrometers and it is doped with Boron at a concentration of 764118480082652495872 cm^-3. The long gate region is of the material Diamond with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 345121109313296400384 cm^-3. The drain region is of the material Diamond with a length of 0.75 micrometers and it is doped with Boron at a concentration of 453369380228074962944 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.41)\n(define Lgl 0.41)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.75)\n(define Ld 0.75)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t376612847265663287296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t764118480082652495872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t345121109313296400384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t453369380228074962944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 125972123496510816256 cm^-3. The short gate region is of the material GaN with a length of 0.33 micrometers and it is doped with Boron at a concentration of 570223369723785773056 cm^-3. The long gate region is of the material Silicon with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 296843400178680594432 cm^-3. The drain region is of the material GaN with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 268059389214068572160 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.33)\n(define Lgl 0.92)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.83)\n(define Ld 0.83)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t125972123496510816256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t570223369723785773056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t296843400178680594432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t268059389214068572160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 86061897864420360192 cm^-3. The short gate region is of the material Diamond with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 420933431823896936448 cm^-3. The long gate region is of the material Diamond with a length of 0.77 micrometers and it is doped with Boron at a concentration of 517279910604727386112 cm^-3. The drain region is of the material Silicon with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 734066522889086173184 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.84)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t86061897864420360192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t420933431823896936448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t517279910604727386112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t734066522889086173184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.58 micrometers and it is doped with Boron at a concentration of 588394771961937526784 cm^-3. The short gate region is of the material Germanium with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 956155335463258554368 cm^-3. The long gate region is of the material Diamond with a length of 0.81 micrometers and it is doped with Boron at a concentration of 664513361287528185856 cm^-3. The drain region is of the material SiGe with a length of 0.58 micrometers and it is doped with Boron at a concentration of 38555455433968566272 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.11)\n(define Lgl 0.81)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.58)\n(define Ld 0.58)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t588394771961937526784\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t956155335463258554368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t664513361287528185856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t38555455433968566272\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 381593307982496923648 cm^-3. The short gate region is of the material Silicon with a length of 0.75 micrometers and it is doped with Arsenic at a concentration of 607847524682890608640 cm^-3. The long gate region is of the material Diamond with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 37440044589724164096 cm^-3. The drain region is of the material Germanium with a length of 0.37 micrometers and it is doped with Arsenic at a concentration of 494007126729746677760 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.75)\n(define Lgl 0.08)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.37)\n(define Ld 0.37)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t381593307982496923648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t607847524682890608640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t37440044589724164096\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t494007126729746677760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 993688703368792244224 cm^-3. The short gate region is of the material Silicon with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 948137436137256648704 cm^-3. The long gate region is of the material Diamond with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 241930096713754673152 cm^-3. The drain region is of the material Diamond with a length of 0.1 micrometers and it is doped with Boron at a concentration of 545357088353159479296 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.21)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.1)\n(define Ld 0.1)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t993688703368792244224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t948137436137256648704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t241930096713754673152\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t545357088353159479296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.06 micrometers and it is doped with Boron at a concentration of 614842813584012345344 cm^-3. The short gate region is of the material GaN with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 231305590001812144128 cm^-3. The long gate region is of the material SiGe with a length of 0.93 micrometers and it is doped with Boron at a concentration of 205733263431684718592 cm^-3. The drain region is of the material Silicon with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 196728183368940748800 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.62)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.06)\n(define Ld 0.06)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t614842813584012345344\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t231305590001812144128\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t205733263431684718592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t196728183368940748800\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 45935589656062181376 cm^-3. The short gate region is of the material Diamond with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 213088601164731514880 cm^-3. The long gate region is of the material Diamond with a length of 0.34 micrometers and it is doped with Boron at a concentration of 182209263069973348352 cm^-3. The drain region is of the material Silicon with a length of 0.3 micrometers and it is doped with Boron at a concentration of 960602061522726027264 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.43)\n(define Lgl 0.34)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t45935589656062181376\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t213088601164731514880\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t182209263069973348352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t960602061522726027264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 56938766268815335424 cm^-3. The short gate region is of the material SiGe with a length of 0.86 micrometers and it is doped with Boron at a concentration of 49482475273416081408 cm^-3. The long gate region is of the material GaN with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 238977155336861155328 cm^-3. The drain region is of the material GaN with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 859905199238689849344 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.86)\n(define Lgl 0.83)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.74)\n(define Ld 0.74)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t56938766268815335424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t49482475273416081408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t238977155336861155328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t859905199238689849344\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 587354302419076513792 cm^-3. The short gate region is of the material GaN with a length of 0.31 micrometers and it is doped with Boron at a concentration of 433441099615870124032 cm^-3. The long gate region is of the material Germanium with a length of 0.77 micrometers and it is doped with Boron at a concentration of 395769044026197934080 cm^-3. The drain region is of the material SiGe with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 868105991274155606016 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.31)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t587354302419076513792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t433441099615870124032\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t395769044026197934080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t868105991274155606016\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.73 micrometers and it is doped with Boron at a concentration of 203381417181050732544 cm^-3. The short gate region is of the material Diamond with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 18497779919276019712 cm^-3. The long gate region is of the material Diamond with a length of 0.93 micrometers and it is doped with Boron at a concentration of 157583425532261302272 cm^-3. The drain region is of the material GaN with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 433864009872528900096 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.33)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.73)\n(define Ld 0.73)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t203381417181050732544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t18497779919276019712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t157583425532261302272\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t433864009872528900096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 185543988769981399040 cm^-3. The short gate region is of the material Silicon with a length of 0.07 micrometers and it is doped with Boron at a concentration of 239421685841213849600 cm^-3. The long gate region is of the material Silicon with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 591205405578062725120 cm^-3. The drain region is of the material Diamond with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 706688986294173827072 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.07)\n(define Lgl 0.14)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.52)\n(define Ld 0.52)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t185543988769981399040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t239421685841213849600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t591205405578062725120\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t706688986294173827072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 624384394368488439808 cm^-3. The short gate region is of the material SiGe with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 202551388766035247104 cm^-3. The long gate region is of the material Germanium with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 192117410343469318144 cm^-3. The drain region is of the material Silicon with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 519268380542548836352 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.2)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.76)\n(define Ld 0.76)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t624384394368488439808\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t202551388766035247104\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t192117410343469318144\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t519268380542548836352\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 146808392208008642560 cm^-3. The short gate region is of the material GaN with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 30509822931866079232 cm^-3. The long gate region is of the material Silicon with a length of 0.97 micrometers and it is doped with Arsenic at a concentration of 730019228249227132928 cm^-3. The drain region is of the material SiGe with a length of 0.35 micrometers and it is doped with Arsenic at a concentration of 724329424732668952576 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.001 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.62)\n(define Lgl 0.97)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.001)\n(define Rs 0.001)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t146808392208008642560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t30509822931866079232\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t730019228249227132928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t724329424732668952576\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 307280676640511754240 cm^-3. The short gate region is of the material Germanium with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 774548078260365688832 cm^-3. The long gate region is of the material GaN with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 745203743818415603712 cm^-3. The drain region is of the material Germanium with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 211587918119238598656 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.31)\n(define Lgl 0.81)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.25)\n(define Ld 0.25)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t307280676640511754240\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t774548078260365688832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t745203743818415603712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t211587918119238598656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.81 micrometers and it is doped with Boron at a concentration of 508838227791496871936 cm^-3. The short gate region is of the material SiGe with a length of 0.53 micrometers and it is doped with Boron at a concentration of 586844472188846997504 cm^-3. The long gate region is of the material Germanium with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 250817063153756471296 cm^-3. The drain region is of the material GaN with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 536539847371440259072 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.53)\n(define Lgl 0.45)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.81)\n(define Ld 0.81)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t508838227791496871936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t586844472188846997504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t250817063153756471296\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t536539847371440259072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 154276756534522544128 cm^-3. The short gate region is of the material Diamond with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 505467583482157727744 cm^-3. The long gate region is of the material Germanium with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 803474507286435856384 cm^-3. The drain region is of the material GaN with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 479569919113141551104 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.44)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.93)\n(define Ld 0.93)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t154276756534522544128\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t505467583482157727744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t803474507286435856384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t479569919113141551104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 267558801881432784896 cm^-3. The short gate region is of the material Germanium with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 321183175850417061888 cm^-3. The long gate region is of the material Silicon with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 7020250877157435392 cm^-3. The drain region is of the material Diamond with a length of 0.28 micrometers and it is doped with Boron at a concentration of 786340688505777160192 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.02)\n(define Lgl 0.18)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t267558801881432784896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t321183175850417061888\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t7020250877157435392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t786340688505777160192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 539079375041381138432 cm^-3. The short gate region is of the material GaN with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 839141815033277841408 cm^-3. The long gate region is of the material Germanium with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 584827104012586188800 cm^-3. The drain region is of the material Silicon with a length of 0.4 micrometers and it is doped with Boron at a concentration of 163587689624026644480 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.22)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t539079375041381138432\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t839141815033277841408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t584827104012586188800\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t163587689624026644480\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 480682315237361319936 cm^-3. The short gate region is of the material SiGe with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 559801709885422960640 cm^-3. The long gate region is of the material Silicon with a length of 0.97 micrometers and it is doped with Boron at a concentration of 724047483581577822208 cm^-3. The drain region is of the material SiGe with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 138288780445163716608 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.81)\n(define Lgl 0.97)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.92)\n(define Ld 0.92)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t480682315237361319936\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t559801709885422960640\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t724047483581577822208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t138288780445163716608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 190937330540999802880 cm^-3. The short gate region is of the material SiGe with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 239173564798724898816 cm^-3. The long gate region is of the material SiGe with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 393434478397792714752 cm^-3. The drain region is of the material Diamond with a length of 0.8 micrometers and it is doped with Boron at a concentration of 59469114087554203648 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.91)\n(define Lgl 0.16)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.8)\n(define Ld 0.8)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t190937330540999802880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t239173564798724898816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t393434478397792714752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t59469114087554203648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.74 micrometers and it is doped with Boron at a concentration of 506378417210490355712 cm^-3. The short gate region is of the material Silicon with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 263581148188778233856 cm^-3. The long gate region is of the material SiGe with a length of 0.72 micrometers and it is doped with Boron at a concentration of 982306521115013808128 cm^-3. The drain region is of the material SiGe with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 375186632820167671808 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.5)\n(define Lgl 0.72)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.74)\n(define Ld 0.74)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t506378417210490355712\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t263581148188778233856\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t982306521115013808128\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t375186632820167671808\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 455927828837164777472 cm^-3. The short gate region is of the material SiGe with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 844659321913623838720 cm^-3. The long gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 714787185910604103680 cm^-3. The drain region is of the material Germanium with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 314725743953692459008 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.57)\n(define Lgl 0.86)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.5)\n(define Ld 0.5)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t455927828837164777472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t844659321913623838720\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t714787185910604103680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t314725743953692459008\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.48 micrometers and it is doped with Boron at a concentration of 128450945233028235264 cm^-3. The short gate region is of the material GaN with a length of 0.69 micrometers and it is doped with Boron at a concentration of 514020680480614383616 cm^-3. The long gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 838257199733206286336 cm^-3. The drain region is of the material Diamond with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 718233111280453419008 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.69)\n(define Lgl 0.86)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.48)\n(define Ld 0.48)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t128450945233028235264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t514020680480614383616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t838257199733206286336\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t718233111280453419008\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 678629728764923871232 cm^-3. The short gate region is of the material Diamond with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 152383342143136038912 cm^-3. The long gate region is of the material Germanium with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 275285919852940066816 cm^-3. The drain region is of the material Diamond with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 943942363260723265536 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.95)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.87)\n(define Ld 0.87)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t678629728764923871232\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t152383342143136038912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t275285919852940066816\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t943942363260723265536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.4 micrometers and it is doped with Boron at a concentration of 96219156126996496384 cm^-3. The short gate region is of the material Silicon with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 173796036302671380480 cm^-3. The long gate region is of the material SiGe with a length of 1.0 micrometers and it is doped with Phosphorus at a concentration of 675964435745069727744 cm^-3. The drain region is of the material SiGe with a length of 0.4 micrometers and it is doped with Boron at a concentration of 538403254797149143040 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.15)\n(define Lgl 1.0)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t96219156126996496384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t173796036302671380480\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t675964435745069727744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t538403254797149143040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 667675130606842413056 cm^-3. The short gate region is of the material GaN with a length of 0.04 micrometers and it is doped with Boron at a concentration of 566910616762523975680 cm^-3. The long gate region is of the material SiGe with a length of 0.7 micrometers and it is doped with Boron at a concentration of 342744285996950224896 cm^-3. The drain region is of the material Germanium with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 644574457106682478592 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.04)\n(define Lgl 0.7)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t667675130606842413056\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t566910616762523975680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t342744285996950224896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t644574457106682478592\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 631045447128225808384 cm^-3. The short gate region is of the material SiGe with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 157541963960809717760 cm^-3. The long gate region is of the material Germanium with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 513278200225143455744 cm^-3. The drain region is of the material SiGe with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 126955139527012466688 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.13)\n(define Lgl 0.04)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.76)\n(define Ld 0.76)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t631045447128225808384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t157541963960809717760\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t513278200225143455744\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t126955139527012466688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 817687384411661008896 cm^-3. The short gate region is of the material Diamond with a length of 0.73 micrometers and it is doped with Boron at a concentration of 564485065548370018304 cm^-3. The long gate region is of the material SiGe with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 866522460170635444224 cm^-3. The drain region is of the material Silicon with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 539051738162247499776 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.73)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.47)\n(define Ld 0.47)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t817687384411661008896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t564485065548370018304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t866522460170635444224\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t539051738162247499776\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.48 micrometers and it is doped with Boron at a concentration of 337686951943489716224 cm^-3. The short gate region is of the material Diamond with a length of 0.37 micrometers and it is doped with Boron at a concentration of 77788391637418803200 cm^-3. The long gate region is of the material SiGe with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 12015796735676911616 cm^-3. The drain region is of the material Germanium with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 420217721444321198080 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.37)\n(define Lgl 0.58)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.48)\n(define Ld 0.48)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t337686951943489716224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t77788391637418803200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t12015796735676911616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t420217721444321198080\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 564585953882925301760 cm^-3. The short gate region is of the material GaN with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 431911633880564236288 cm^-3. The long gate region is of the material GaN with a length of 0.42 micrometers and it is doped with Boron at a concentration of 411494832155566669824 cm^-3. The drain region is of the material SiGe with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 796451270228527677440 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.3)\n(define Lgl 0.42)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.67)\n(define Ld 0.67)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t564585953882925301760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t431911633880564236288\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t411494832155566669824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t796451270228527677440\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 726050742012001517568 cm^-3. The short gate region is of the material Silicon with a length of 0.6 micrometers and it is doped with Boron at a concentration of 486748183367264763904 cm^-3. The long gate region is of the material Germanium with a length of 0.64 micrometers and it is doped with Boron at a concentration of 956077898057822633984 cm^-3. The drain region is of the material Silicon with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 393952317410302099456 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.6)\n(define Lgl 0.64)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.71)\n(define Ld 0.71)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t726050742012001517568\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t486748183367264763904\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t956077898057822633984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t393952317410302099456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 958371007305351430144 cm^-3. The short gate region is of the material Silicon with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 534399915610482540544 cm^-3. The long gate region is of the material SiGe with a length of 0.88 micrometers and it is doped with Arsenic at a concentration of 44326818996146282496 cm^-3. The drain region is of the material Germanium with a length of 0.42 micrometers and it is doped with Boron at a concentration of 594576642852553883648 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.81)\n(define Lgl 0.88)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.42)\n(define Ld 0.42)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t958371007305351430144\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t534399915610482540544\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t44326818996146282496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t594576642852553883648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.61 micrometers and it is doped with Boron at a concentration of 797717825631130091520 cm^-3. The short gate region is of the material SiGe with a length of 0.11 micrometers and it is doped with Boron at a concentration of 732715066458066780160 cm^-3. The long gate region is of the material Germanium with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 775583646097668964352 cm^-3. The drain region is of the material Silicon with a length of 0.61 micrometers and it is doped with Boron at a concentration of 138076947007383388160 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.11)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.61)\n(define Ld 0.61)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t797717825631130091520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t732715066458066780160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t775583646097668964352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t138076947007383388160\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.3 micrometers and it is doped with Boron at a concentration of 212013655239061667840 cm^-3. The short gate region is of the material SiGe with a length of 0.52 micrometers and it is doped with Boron at a concentration of 478881781665248313344 cm^-3. The long gate region is of the material Germanium with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 654180418559344115712 cm^-3. The drain region is of the material Diamond with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 844011117330745655296 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.52)\n(define Lgl 0.75)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t212013655239061667840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t478881781665248313344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t654180418559344115712\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t844011117330745655296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.52 micrometers and it is doped with Boron at a concentration of 806866345889036238848 cm^-3. The short gate region is of the material Germanium with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 745418136737676918784 cm^-3. The long gate region is of the material Silicon with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 169804865628321021952 cm^-3. The drain region is of the material SiGe with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 555087862810150961152 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.79)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.52)\n(define Ld 0.52)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t806866345889036238848\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t745418136737676918784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t169804865628321021952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t555087862810150961152\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 339206500810774675456 cm^-3. The short gate region is of the material Silicon with a length of 0.81 micrometers and it is doped with Boron at a concentration of 881443206371454091264 cm^-3. The long gate region is of the material GaN with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 384354462595087597568 cm^-3. The drain region is of the material GaN with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 178386991892089274368 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.81)\n(define Lgl 0.34)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.59)\n(define Ld 0.59)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t339206500810774675456\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t881443206371454091264\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t384354462595087597568\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t178386991892089274368\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.83 micrometers and it is doped with Boron at a concentration of 967133039602876284928 cm^-3. The short gate region is of the material SiGe with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 373248061094403899392 cm^-3. The long gate region is of the material GaN with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 817818777733973016576 cm^-3. The drain region is of the material Diamond with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 541332362901485649920 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.94)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.83)\n(define Ld 0.83)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t967133039602876284928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t373248061094403899392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t817818777733973016576\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t541332362901485649920\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.14 micrometers and it is doped with Boron at a concentration of 5968239656588481536 cm^-3. The short gate region is of the material Silicon with a length of 0.45 micrometers and it is doped with Boron at a concentration of 6582141938086117376 cm^-3. The long gate region is of the material Silicon with a length of 0.72 micrometers and it is doped with Boron at a concentration of 943409070481195925504 cm^-3. The drain region is of the material Silicon with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 956599918138297810944 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.45)\n(define Lgl 0.72)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.14)\n(define Ld 0.14)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t5968239656588481536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t6582141938086117376\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t943409070481195925504\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t956599918138297810944\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 25066180087035826176 cm^-3. The short gate region is of the material GaN with a length of 0.96 micrometers and it is doped with Boron at a concentration of 132874494543432138752 cm^-3. The long gate region is of the material SiGe with a length of 0.6 micrometers and it is doped with Boron at a concentration of 595246217248081575936 cm^-3. The drain region is of the material Diamond with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 16213591738446329856 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.96)\n(define Lgl 0.6)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t25066180087035826176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t132874494543432138752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t595246217248081575936\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t16213591738446329856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.74 micrometers and it is doped with Boron at a concentration of 170856252235734679552 cm^-3. The short gate region is of the material GaN with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 178373343999365120000 cm^-3. The long gate region is of the material SiGe with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 935410083044867047424 cm^-3. The drain region is of the material Silicon with a length of 0.74 micrometers and it is doped with Boron at a concentration of 301639393253953241088 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.96)\n(define Lgl 0.39)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.74)\n(define Ld 0.74)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t170856252235734679552\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t178373343999365120000\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t935410083044867047424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t301639393253953241088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 680909102674576670720 cm^-3. The short gate region is of the material SiGe with a length of 0.34 micrometers and it is doped with Boron at a concentration of 679252491784034058240 cm^-3. The long gate region is of the material Germanium with a length of 0.1 micrometers and it is doped with Boron at a concentration of 139260263742619664384 cm^-3. The drain region is of the material Diamond with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 380553582969904037888 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.34)\n(define Lgl 0.1)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t680909102674576670720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t679252491784034058240\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t139260263742619664384\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t380553582969904037888\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 43575157112254660608 cm^-3. The short gate region is of the material Diamond with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 437685939674740686848 cm^-3. The long gate region is of the material GaN with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 576362426648098373632 cm^-3. The drain region is of the material SiGe with a length of 0.4 micrometers and it is doped with Boron at a concentration of 636517444007486160896 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.9)\n(define Lgl 0.93)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t43575157112254660608\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t437685939674740686848\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t576362426648098373632\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t636517444007486160896\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 725071265708343296000 cm^-3. The short gate region is of the material Germanium with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 30847514172274098176 cm^-3. The long gate region is of the material GaN with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 439167694207125422080 cm^-3. The drain region is of the material Diamond with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 534206291252304281600 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.9)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t725071265708343296000\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t30847514172274098176\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t439167694207125422080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t534206291252304281600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.8 micrometers and it is doped with Boron at a concentration of 962622479755677401088 cm^-3. The short gate region is of the material Silicon with a length of 0.56 micrometers and it is doped with Boron at a concentration of 301241417379376267264 cm^-3. The long gate region is of the material Silicon with a length of 0.15 micrometers and it is doped with Boron at a concentration of 202009880495215673344 cm^-3. The drain region is of the material Diamond with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 111455740482344681472 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.56)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.8)\n(define Ld 0.8)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t962622479755677401088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t301241417379376267264\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t202009880495215673344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t111455740482344681472\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 996344484513219870720 cm^-3. The short gate region is of the material GaN with a length of 0.92 micrometers and it is doped with Boron at a concentration of 200145033371299938304 cm^-3. The long gate region is of the material Germanium with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 603916148997999427584 cm^-3. The drain region is of the material SiGe with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 566502543399461847040 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.92)\n(define Lgl 0.13)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.87)\n(define Ld 0.87)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t996344484513219870720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t200145033371299938304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t603916148997999427584\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t566502543399461847040\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 217009236785530142720 cm^-3. The short gate region is of the material GaN with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 50299878779782504448 cm^-3. The long gate region is of the material SiGe with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 462658339835539226624 cm^-3. The drain region is of the material GaN with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 82162607631254568960 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.75)\n(define Lgl 0.59)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.18)\n(define Ld 0.18)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t217009236785530142720\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t50299878779782504448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t462658339835539226624\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t82162607631254568960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.9 micrometers and it is doped with Boron at a concentration of 625968042527182028800 cm^-3. The short gate region is of the material Germanium with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 479902564075493654528 cm^-3. The long gate region is of the material Silicon with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 955210931519536103424 cm^-3. The drain region is of the material Germanium with a length of 0.9 micrometers and it is doped with Boron at a concentration of 240935153923055419392 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.92)\n(define Lgl 0.46)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.9)\n(define Ld 0.9)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t625968042527182028800\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t479902564075493654528\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t955210931519536103424\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t240935153923055419392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 530525611740200304640 cm^-3. The short gate region is of the material GaN with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 794359261706058465280 cm^-3. The long gate region is of the material SiGe with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 708702835203671195648 cm^-3. The drain region is of the material Germanium with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 717208281658991443968 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.23)\n(define Lgl 0.04)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.68)\n(define Ld 0.68)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t530525611740200304640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t794359261706058465280\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t708702835203671195648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t717208281658991443968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 604292646389465350144 cm^-3. The short gate region is of the material Silicon with a length of 0.07 micrometers and it is doped with Boron at a concentration of 139160019103428476928 cm^-3. The long gate region is of the material GaN with a length of 0.48 micrometers and it is doped with Boron at a concentration of 212641095099826241536 cm^-3. The drain region is of the material Diamond with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 304093187875856187392 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.07)\n(define Lgl 0.48)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.71)\n(define Ld 0.71)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t604292646389465350144\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t139160019103428476928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t212641095099826241536\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t304093187875856187392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.13 micrometers and it is doped with Boron at a concentration of 709034659139484778496 cm^-3. The short gate region is of the material Germanium with a length of 0.76 micrometers and it is doped with Boron at a concentration of 425242728990100029440 cm^-3. The long gate region is of the material SiGe with a length of 0.11 micrometers and it is doped with Boron at a concentration of 525206293883451867136 cm^-3. The drain region is of the material Germanium with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 624995012202563895296 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.76)\n(define Lgl 0.11)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.13)\n(define Ld 0.13)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t709034659139484778496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t425242728990100029440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t525206293883451867136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t624995012202563895296\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 629939400727106682880 cm^-3. The short gate region is of the material Silicon with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 546268146698081665024 cm^-3. The long gate region is of the material Germanium with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 782078191528748908544 cm^-3. The drain region is of the material Silicon with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 200760659294586732544 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.01)\n(define Lgs 0.45)\n(define Lgl 0.63)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.38)\n(define Ld 0.38)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t629939400727106682880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t546268146698081665024\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t782078191528748908544\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t200760659294586732544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.45 micrometers and it is doped with Boron at a concentration of 906075085646203584512 cm^-3. The short gate region is of the material SiGe with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 127008693672964521984 cm^-3. The long gate region is of the material Silicon with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 385506800212092387328 cm^-3. The drain region is of the material GaN with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 46808769166884429824 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.07)\n(define Lgl 0.49)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.45)\n(define Ld 0.45)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t906075085646203584512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t127008693672964521984\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t385506800212092387328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t46808769166884429824\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.18 micrometers and it is doped with Arsenic at a concentration of 244783290428234563584 cm^-3. The short gate region is of the material Silicon with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 23550730731642216448 cm^-3. The long gate region is of the material SiGe with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 10510289177531766784 cm^-3. The drain region is of the material GaN with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 279549467877462179840 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.93)\n(define Lgl 0.77)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.18)\n(define Ld 0.18)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t244783290428234563584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t23550730731642216448\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t10510289177531766784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t279549467877462179840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 650987722230022275072 cm^-3. The short gate region is of the material GaN with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 801625494472785788928 cm^-3. The long gate region is of the material Diamond with a length of 0.97 micrometers and it is doped with Boron at a concentration of 660084017120301678592 cm^-3. The drain region is of the material Germanium with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 833911676189207691264 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.07)\n(define Lgl 0.97)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.92)\n(define Ld 0.92)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t650987722230022275072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t801625494472785788928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t660084017120301678592\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t833911676189207691264\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.53 micrometers and it is doped with Boron at a concentration of 987694403714510225408 cm^-3. The short gate region is of the material SiGe with a length of 0.68 micrometers and it is doped with Arsenic at a concentration of 377729463563754536960 cm^-3. The long gate region is of the material Silicon with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 944492205979117158400 cm^-3. The drain region is of the material SiGe with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 209448681231425568768 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.68)\n(define Lgl 0.35)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.53)\n(define Ld 0.53)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t987694403714510225408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t377729463563754536960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t944492205979117158400\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t209448681231425568768\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 101503242692500307968 cm^-3. The short gate region is of the material Silicon with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 471274299314652708864 cm^-3. The long gate region is of the material Germanium with a length of 0.05 micrometers and it is doped with Boron at a concentration of 501864420217716342784 cm^-3. The drain region is of the material SiGe with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 672814213731007332352 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.41)\n(define Lgl 0.05)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.86)\n(define Ld 0.86)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t101503242692500307968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t471274299314652708864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t501864420217716342784\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t672814213731007332352\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 138531188229239685120 cm^-3. The short gate region is of the material Diamond with a length of 0.46 micrometers and it is doped with Boron at a concentration of 164297624844282232832 cm^-3. The long gate region is of the material SiGe with a length of 0.56 micrometers and it is doped with Boron at a concentration of 488694843154096586752 cm^-3. The drain region is of the material GaN with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 980319193582709112832 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.46)\n(define Lgl 0.56)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.25)\n(define Ld 0.25)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t138531188229239685120\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t164297624844282232832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t488694843154096586752\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t980319193582709112832\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 586180203159855038464 cm^-3. The short gate region is of the material Diamond with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 940736669927547600896 cm^-3. The long gate region is of the material GaN with a length of 0.95 micrometers and it is doped with Boron at a concentration of 835893818695115735040 cm^-3. The drain region is of the material Germanium with a length of 0.51 micrometers and it is doped with Boron at a concentration of 535461202674654642176 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.41)\n(define Lgl 0.95)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.51)\n(define Ld 0.51)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t586180203159855038464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t940736669927547600896\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t835893818695115735040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t535461202674654642176\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 520654855673975930880 cm^-3. The short gate region is of the material SiGe with a length of 0.72 micrometers and it is doped with Boron at a concentration of 608605852151518461952 cm^-3. The long gate region is of the material Diamond with a length of 0.29 micrometers and it is doped with Arsenic at a concentration of 239487906574704803840 cm^-3. The drain region is of the material GaN with a length of 0.91 micrometers and it is doped with Boron at a concentration of 599360782316889964544 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.72)\n(define Lgl 0.29)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.91)\n(define Ld 0.91)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t520654855673975930880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t608605852151518461952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t239487906574704803840\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t599360782316889964544\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 297753236395066785792 cm^-3. The short gate region is of the material GaN with a length of 0.96 micrometers and it is doped with Boron at a concentration of 323991453987508453376 cm^-3. The long gate region is of the material Germanium with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 170275620298940710912 cm^-3. The drain region is of the material Silicon with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 454013016844246712320 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.96)\n(define Lgl 0.76)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.15)\n(define Ld 0.15)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t297753236395066785792\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t323991453987508453376\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t170275620298940710912\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t454013016844246712320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 620208047197904961536 cm^-3. The short gate region is of the material SiGe with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 612297688745501786112 cm^-3. The long gate region is of the material Germanium with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 125603203386793066496 cm^-3. The drain region is of the material Germanium with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 980701821992028995584 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.44)\n(define Lgl 0.72)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.86)\n(define Ld 0.86)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t620208047197904961536\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t612297688745501786112\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t125603203386793066496\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t980701821992028995584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.7 micrometers and it is doped with Boron at a concentration of 32884025313363480576 cm^-3. The short gate region is of the material Germanium with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 386953454817474379776 cm^-3. The long gate region is of the material Diamond with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 518204407878989119488 cm^-3. The drain region is of the material Silicon with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 474677640813745274880 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.08)\n(define Lgl 0.25)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.7)\n(define Ld 0.7)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t32884025313363480576\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t386953454817474379776\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t518204407878989119488\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t474677640813745274880\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.13 micrometers and it is doped with Boron at a concentration of 274051528856394399744 cm^-3. The short gate region is of the material SiGe with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 980781701737886253056 cm^-3. The long gate region is of the material Silicon with a length of 0.14 micrometers and it is doped with Boron at a concentration of 105513048529616797696 cm^-3. The drain region is of the material Silicon with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 968064020636644016128 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.46)\n(define Lgl 0.14)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.13)\n(define Ld 0.13)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t274051528856394399744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t980781701737886253056\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t105513048529616797696\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t968064020636644016128\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.1 micrometers and it is doped with Boron at a concentration of 423419509285214617600 cm^-3. The short gate region is of the material Diamond with a length of 0.31 micrometers and it is doped with Boron at a concentration of 390936444829697835008 cm^-3. The long gate region is of the material Silicon with a length of 0.76 micrometers and it is doped with Boron at a concentration of 284892084252384559104 cm^-3. The drain region is of the material GaN with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 241311251958669180928 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.31)\n(define Lgl 0.76)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.1)\n(define Ld 0.1)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t423419509285214617600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t390936444829697835008\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t284892084252384559104\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t241311251958669180928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 313069951328047857664 cm^-3. The short gate region is of the material SiGe with a length of 0.07 micrometers and it is doped with Phosphorus at a concentration of 13830030316518041600 cm^-3. The long gate region is of the material GaN with a length of 0.75 micrometers and it is doped with Boron at a concentration of 577220577586090737664 cm^-3. The drain region is of the material Germanium with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 236224707073014890496 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.07)\n(define Lgl 0.75)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.02)\n(define Ld 0.02)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t313069951328047857664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t13830030316518041600\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t577220577586090737664\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t236224707073014890496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.28 micrometers and it is doped with Boron at a concentration of 531200637417460203520 cm^-3. The short gate region is of the material Diamond with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 119171521276450799616 cm^-3. The long gate region is of the material Germanium with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 86037642699901747200 cm^-3. The drain region is of the material Silicon with a length of 0.28 micrometers and it is doped with Boron at a concentration of 780954680579363569664 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.76)\n(define Lgl 0.81)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.28)\n(define Ld 0.28)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t531200637417460203520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t119171521276450799616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t86037642699901747200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t780954680579363569664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 225290114087951400960 cm^-3. The short gate region is of the material Diamond with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 318203178333265985536 cm^-3. The long gate region is of the material Silicon with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 83497584595650510848 cm^-3. The drain region is of the material Diamond with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 894810587979553308672 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.64)\n(define Lgl 0.17)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.31)\n(define Ld 0.31)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t225290114087951400960\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t318203178333265985536\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t83497584595650510848\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t894810587979553308672\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 84106200510533058560 cm^-3. The short gate region is of the material Silicon with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 719938718221279035392 cm^-3. The long gate region is of the material Silicon with a length of 0.69 micrometers and it is doped with Boron at a concentration of 823730797000815804416 cm^-3. The drain region is of the material Silicon with a length of 0.86 micrometers and it is doped with Boron at a concentration of 856064571260058992640 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.43)\n(define Lgl 0.69)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.86)\n(define Ld 0.86)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t84106200510533058560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t719938718221279035392\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t823730797000815804416\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t856064571260058992640\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.25 micrometers and it is doped with Boron at a concentration of 150424398668180291584 cm^-3. The short gate region is of the material Diamond with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 382158389413707644928 cm^-3. The long gate region is of the material SiGe with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 968879406026733780992 cm^-3. The drain region is of the material SiGe with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 975841451659399528448 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.19)\n(define Lgl 0.55)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.25)\n(define Ld 0.25)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t150424398668180291584\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t382158389413707644928\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t968879406026733780992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t975841451659399528448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 769736773282846736384 cm^-3. The short gate region is of the material SiGe with a length of 0.9 micrometers and it is doped with Boron at a concentration of 775825424682972217344 cm^-3. The long gate region is of the material Silicon with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 9828655788966115328 cm^-3. The drain region is of the material Diamond with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 404499229927784185856 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.9)\n(define Lgl 0.99)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.34)\n(define Ld 0.34)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t769736773282846736384\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t775825424682972217344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t9828655788966115328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t404499229927784185856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.4 micrometers and it is doped with Boron at a concentration of 861358939830160064512 cm^-3. The short gate region is of the material Silicon with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 72716155039619317760 cm^-3. The long gate region is of the material GaN with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 300019072172988301312 cm^-3. The drain region is of the material GaN with a length of 0.4 micrometers and it is doped with Arsenic at a concentration of 18530145740228947968 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.19)\n(define Lgl 0.97)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.4)\n(define Ld 0.4)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t861358939830160064512\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t72716155039619317760\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t300019072172988301312\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t18530145740228947968\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 893679086324206927872 cm^-3. The short gate region is of the material Silicon with a length of 0.42 micrometers and it is doped with Boron at a concentration of 548277295106630615040 cm^-3. The long gate region is of the material SiGe with a length of 0.3 micrometers and it is doped with Boron at a concentration of 487034356220987965440 cm^-3. The drain region is of the material Diamond with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 848206044506112655360 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.42)\n(define Lgl 0.3)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.95)\n(define Ld 0.95)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t893679086324206927872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t548277295106630615040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t487034356220987965440\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t848206044506112655360\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 184215210380885950464 cm^-3. The short gate region is of the material SiGe with a length of 0.88 micrometers and it is doped with Boron at a concentration of 354782922433133412352 cm^-3. The long gate region is of the material Silicon with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 958836333461785935872 cm^-3. The drain region is of the material SiGe with a length of 0.3 micrometers and it is doped with Boron at a concentration of 256039198547508166656 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.88)\n(define Lgl 0.99)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t184215210380885950464\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t354782922433133412352\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t958836333461785935872\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t256039198547508166656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 440421708512274022400 cm^-3. The short gate region is of the material GaN with a length of 0.94 micrometers and it is doped with Boron at a concentration of 389399196896593444864 cm^-3. The long gate region is of the material SiGe with a length of 0.38 micrometers and it is doped with Phosphorus at a concentration of 569710198520290869248 cm^-3. The drain region is of the material Silicon with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 671778228672858292224 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.94)\n(define Lgl 0.38)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.3)\n(define Ld 0.3)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t440421708512274022400\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t389399196896593444864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t569710198520290869248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t671778228672858292224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.68 micrometers and it is doped with Boron at a concentration of 886726321254659129344 cm^-3. The short gate region is of the material Germanium with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 675153556379815772160 cm^-3. The long gate region is of the material Germanium with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 306190585244821487616 cm^-3. The drain region is of the material Germanium with a length of 0.68 micrometers and it is doped with Boron at a concentration of 359271891599558443008 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.61)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.68)\n(define Ld 0.68)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t886726321254659129344\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t675153556379815772160\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t306190585244821487616\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t359271891599558443008\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 943888736463494971392 cm^-3. The short gate region is of the material Germanium with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 265800256548774281216 cm^-3. The long gate region is of the material Diamond with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 242310792390576832512 cm^-3. The drain region is of the material SiGe with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 587890826509307215872 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.29)\n(define Lgl 0.87)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.24)\n(define Ld 0.24)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t943888736463494971392\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t265800256548774281216\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t242310792390576832512\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t587890826509307215872\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.84 micrometers and it is doped with Boron at a concentration of 874507791050438868992 cm^-3. The short gate region is of the material Diamond with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 153961178098836635648 cm^-3. The long gate region is of the material SiGe with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 937822824719245639680 cm^-3. The drain region is of the material Germanium with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 861943975459663249408 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.003)\n(define Lgs 0.6)\n(define Lgl 0.21)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.84)\n(define Ld 0.84)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t874507791050438868992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t153961178098836635648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t937822824719245639680\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t861943975459663249408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 774086061996470435840 cm^-3. The short gate region is of the material Silicon with a length of 0.15 micrometers and it is doped with Boron at a concentration of 94427777985986658304 cm^-3. The long gate region is of the material SiGe with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 774526395731769032704 cm^-3. The drain region is of the material SiGe with a length of 0.35 micrometers and it is doped with Boron at a concentration of 49194509744278233088 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.15)\n(define Lgl 0.47)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.35)\n(define Ld 0.35)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t774086061996470435840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t94427777985986658304\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t774526395731769032704\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t49194509744278233088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.06 micrometers and it is doped with Phosphorus at a concentration of 431755019304737439744 cm^-3. The short gate region is of the material Silicon with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 911632576843449761792 cm^-3. The long gate region is of the material Silicon with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 646278924780984860672 cm^-3. The drain region is of the material GaN with a length of 0.06 micrometers and it is doped with Boron at a concentration of 632574756408144297984 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.48)\n(define Lgl 0.02)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.06)\n(define Ld 0.06)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Silicon\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t431755019304737439744\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t911632576843449761792\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t646278924780984860672\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t632574756408144297984\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 975841468287737528320 cm^-3. The short gate region is of the material Diamond with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 632287220052480229376 cm^-3. The long gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 759606433446352125952 cm^-3. The drain region is of the material Diamond with a length of 0.13 micrometers and it is doped with Boron at a concentration of 985744297071350513664 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.02)\n(define Lgl 0.86)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.13)\n(define Ld 0.13)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t975841468287737528320\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t632287220052480229376\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t759606433446352125952\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t985744297071350513664\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.36 micrometers and it is doped with Boron at a concentration of 421290824909387202560 cm^-3. The short gate region is of the material SiGe with a length of 0.2 micrometers and it is doped with Phosphorus at a concentration of 467515266963320209408 cm^-3. The long gate region is of the material Germanium with a length of 0.25 micrometers and it is doped with Boron at a concentration of 739815063870077534208 cm^-3. The drain region is of the material Diamond with a length of 0.36 micrometers and it is doped with Boron at a concentration of 806351176738682306560 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.001)\n(define Lgs 0.2)\n(define Lgl 0.25)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.36)\n(define Ld 0.36)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Diamond\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t421290824909387202560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t467515266963320209408\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t739815063870077534208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t806351176738682306560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.87 micrometers and it is doped with Phosphorus at a concentration of 418242318566390759424 cm^-3. The short gate region is of the material Silicon with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 315856989217712504832 cm^-3. The long gate region is of the material Germanium with a length of 0.67 micrometers and it is doped with Boron at a concentration of 532080381404710043648 cm^-3. The drain region is of the material GaN with a length of 0.87 micrometers and it is doped with Arsenic at a concentration of 906342605853932650496 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.43)\n(define Lgl 0.67)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.87)\n(define Ld 0.87)\n(define Rl 0.002)\n(define Rs 0.002)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t418242318566390759424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t315856989217712504832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t532080381404710043648\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t906342605853932650496\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 876111352381644079104 cm^-3. The short gate region is of the material Germanium with a length of 0.17 micrometers and it is doped with Boron at a concentration of 155236715421108436992 cm^-3. The long gate region is of the material GaN with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 647164664978041864192 cm^-3. The drain region is of the material SiGe with a length of 0.46 micrometers and it is doped with Boron at a concentration of 548085109922368454656 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.17)\n(define Lgl 0.57)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.46)\n(define Ld 0.46)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t876111352381644079104\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t155236715421108436992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t647164664978041864192\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t548085109922368454656\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 854714731967297748992 cm^-3. The short gate region is of the material Germanium with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 925764316261722357760 cm^-3. The long gate region is of the material GaN with a length of 1.0 micrometers and it is doped with Phosphorus at a concentration of 178010665667619192832 cm^-3. The drain region is of the material SiGe with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 50929958814865522688 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.002)\n(define Lgs 0.74)\n(define Lgl 1.0)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.76)\n(define Ld 0.76)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t854714731967297748992\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t925764316261722357760\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t178010665667619192832\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t50929958814865522688\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.79 micrometers and it is doped with Boron at a concentration of 120523872674548252672 cm^-3. The short gate region is of the material Diamond with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 261483586022963806208 cm^-3. The long gate region is of the material Diamond with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 288704171872038453248 cm^-3. The drain region is of the material SiGe with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 44988317717097209856 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.01 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.53)\n(define Lgl 0.09)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.79)\n(define Ld 0.79)\n(define Rl 0.01)\n(define Rs 0.01)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t120523872674548252672\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t261483586022963806208\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t288704171872038453248\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t44988317717097209856\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 112360289077742747648 cm^-3. The short gate region is of the material Germanium with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 61207597984278740992 cm^-3. The long gate region is of the material Diamond with a length of 0.89 micrometers and it is doped with Boron at a concentration of 651092041397677195264 cm^-3. The drain region is of the material Germanium with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 215267401036474777600 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.7)\n(define Lgl 0.89)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.14)\n(define Ld 0.14)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tArsenic\n\t112360289077742747648\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t61207597984278740992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t651092041397677195264\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t215267401036474777600\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 252345287641683427328 cm^-3. The short gate region is of the material Diamond with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 94346714241033912320 cm^-3. The long gate region is of the material GaN with a length of 0.61 micrometers and it is doped with Boron at a concentration of 815275287243990499328 cm^-3. The drain region is of the material SiGe with a length of 0.75 micrometers and it is doped with Arsenic at a concentration of 722790190316884459520 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.008)\n(define Lgs 0.93)\n(define Lgl 0.61)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.75)\n(define Ld 0.75)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t252345287641683427328\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t94346714241033912320\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t815275287243990499328\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t722790190316884459520\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 105270263339094097920 cm^-3. The short gate region is of the material GaN with a length of 0.67 micrometers and it is doped with Phosphorus at a concentration of 158787754952913387520 cm^-3. The long gate region is of the material Diamond with a length of 0.4 micrometers and it is doped with Boron at a concentration of 913647142789677842432 cm^-3. The drain region is of the material SiGe with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 308827024830082056192 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.67)\n(define Lgl 0.4)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.78)\n(define Ld 0.78)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t105270263339094097920\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t158787754952913387520\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t913647142789677842432\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t308827024830082056192\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 370703183259406041088 cm^-3. The short gate region is of the material Germanium with a length of 0.45 micrometers and it is doped with Boron at a concentration of 992357341758518067200 cm^-3. The long gate region is of the material SiGe with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 436843938648917934080 cm^-3. The drain region is of the material Germanium with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 806898870658809987072 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.\n",
        "output": "(define tox 0.007)\n(define Lgs 0.45)\n(define Lgl 0.74)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.32)\n(define Ld 0.32)\n(define Rl 0.003)\n(define Rs 0.003)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t370703183259406041088\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t992357341758518067200\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t436843938648917934080\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t806898870658809987072\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.33 micrometers and it is doped with Boron at a concentration of 596871683748408721408 cm^-3. The short gate region is of the material Diamond with a length of 0.93 micrometers and it is doped with Boron at a concentration of 955149926256942120960 cm^-3. The long gate region is of the material Diamond with a length of 0.89 micrometers and it is doped with Boron at a concentration of 286770040320378404864 cm^-3. The drain region is of the material Silicon with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 142229043511526014976 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.\n",
        "output": "(define tox 0.009)\n(define Lgs 0.93)\n(define Lgl 0.89)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.33)\n(define Ld 0.33)\n(define Rl 0.009)\n(define Rs 0.009)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Silicon\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Diamond\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Diamond\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t596871683748408721408\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t955149926256942120960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t286770040320378404864\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t142229043511526014976\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.14 micrometers and it is doped with Boron at a concentration of 821935934902805725184 cm^-3. The short gate region is of the material SiGe with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 977548549035313594368 cm^-3. The long gate region is of the material SiGe with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 896243528708536532992 cm^-3. The drain region is of the material SiGe with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 503191814199079075840 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.15)\n(define Lgl 0.08)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.14)\n(define Ld 0.14)\n(define Rl 0.004)\n(define Rs 0.004)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"SiGe\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t821935934902805725184\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t977548549035313594368\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t896243528708536532992\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tArsenic\n\t503191814199079075840\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.02 micrometers and it is doped with Boron at a concentration of 947519669504534773760 cm^-3. The short gate region is of the material Silicon with a length of 0.12 micrometers and it is doped with Arsenic at a concentration of 129377217599702073344 cm^-3. The long gate region is of the material Germanium with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 20053595802607144960 cm^-3. The drain region is of the material GaN with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 596692122767129575424 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.12)\n(define Lgl 0.03)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.02)\n(define Ld 0.02)\n(define Rl 0.005)\n(define Rs 0.005)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"SiGe\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t947519669504534773760\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t129377217599702073344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t20053595802607144960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t596692122767129575424\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 504312477223705772032 cm^-3. The short gate region is of the material SiGe with a length of 0.88 micrometers and it is doped with Boron at a concentration of 828567525150764302336 cm^-3. The long gate region is of the material SiGe with a length of 0.91 micrometers and it is doped with Boron at a concentration of 866430963769007144960 cm^-3. The drain region is of the material GaN with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 466318811205388468224 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.88)\n(define Lgl 0.91)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.82)\n(define Ld 0.82)\n(define Rl 0.008)\n(define Rs 0.008)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"SiGe\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"SiGe\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t504312477223705772032\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tBoron\n\t828567525150764302336\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t866430963769007144960\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t466318811205388468224\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.97 micrometers and it is doped with Boron at a concentration of 949528743958766944256 cm^-3. The short gate region is of the material GaN with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 763507119574217785344 cm^-3. The long gate region is of the material Germanium with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 13460316143221315584 cm^-3. The drain region is of the material GaN with a length of 0.97 micrometers and it is doped with Boron at a concentration of 251391037096411496448 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.76)\n(define Lgl 0.22)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.97)\n(define Ld 0.97)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Diamond\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"GaN\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"GaN\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t949528743958766944256\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t763507119574217785344\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t13460316143221315584\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t251391037096411496448\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 416660453684434829312 cm^-3. The short gate region is of the material Silicon with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 337542493748404813824 cm^-3. The long gate region is of the material GaN with a length of 0.84 micrometers and it is doped with Boron at a concentration of 480319810566644695040 cm^-3. The drain region is of the material Silicon with a length of 0.86 micrometers and it is doped with Boron at a concentration of 503295747280754180096 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.006)\n(define Lgs 0.99)\n(define Lgl 0.84)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.86)\n(define Ld 0.86)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"Germanium\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t416660453684434829312\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t337542493748404813824\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tBoron\n\t480319810566644695040\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t503295747280754180096\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tBoron\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.85 micrometers and it is doped with Boron at a concentration of 570950057299197820928 cm^-3. The short gate region is of the material Silicon with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 347392381153403731968 cm^-3. The long gate region is of the material GaN with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 795419286016369491968 cm^-3. The drain region is of the material Silicon with a length of 0.85 micrometers and it is doped with Boron at a concentration of 933984134553582305280 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.\n",
        "output": "(define tox 0.005)\n(define Lgs 0.21)\n(define Lgl 0.96)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.85)\n(define Ld 0.85)\n(define Rl 0.006)\n(define Rs 0.006)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Silicon\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"GaN\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Silicon\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tBoron\n\t570950057299197820928\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tPhosphorus\n\t347392381153403731968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tArsenic\n\t795419286016369491968\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tBoron\n\t933984134553582305280\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tArsenic\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    },
    {
        "instruction": "This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 734826732508378562560 cm^-3. The short gate region is of the material Germanium with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 739897035839617368064 cm^-3. The long gate region is of the material Germanium with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 941714684322363867136 cm^-3. The drain region is of the material Germanium with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 132531686885463228416 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.\n",
        "output": "(define tox 0.004)\n(define Lgs 0.66)\n(define Lgl 0.15)\n(define Ltotal (+ Lgs Lgl))\n(define Ls 0.96)\n(define Ld 0.96)\n(define Rl 0.007)\n(define Rs 0.007)\n(define Xmin 0)\n(define Xmax (+ Ls Ltotal Ld))\n(define tg 0.01)\n(define Ymin 0)\n(define Ymax Rl)\n(define XSource (+ Xmin Ls))\n(define XGates (+ XSource Lgs))\n(define XGatel (+ XGates Lgl))\n\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position XSource Ymax 0) \"GaN\" \"R.Source\")\n(sdegeo:create-rectangle (position XSource Ymin 0)  (position XGates Rs 0) \"Germanium\" \"R.Short_Gate\")\n(sdegeo:create-rectangle (position XGates Ymin 0)  (position XGatel Ymax 0) \"Germanium\" \"R.Long_Gate\")\n(sdegeo:create-rectangle (position XGatel Ymin 0)  (position Xmax Ymax 0) \"Germanium\" \"R.Drain\")\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n(sdegeo:create-rectangle (position Xmin Ymin 0)  (position Xmax (+ Ymax tox) 0) \"Oxide\" \"R.Oxide\")\n(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0)  (position XGatel (+ Ymax tox tg) 0) \"PolySilicon\" \"R.Gate\"))\n\n\n\n; Old replaces New\n(sdegeo:set-default-boolean \"BAB\")\n;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0)  (position XGatel (+ Ymax tox tox tg) 0) \"Metal\" \"R.Dummy\"))\n(sdegeo:define-contact-set \"gate\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"gate\")\n(sdegeo:set-contact-boundary-edges gatedummy \"gate\")\n(sdegeo:delete-region gatedummy)\n\n(sdegeo:define-contact-set \"source\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"source\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) \"source\")\n\n(sdegeo:define-contact-set \"drain\" 4  (color:rgb 1 0 0 ) \"##\")\n(sdegeo:set-current-contact-set \"drain\")\n(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) \"drain\")\n\n; Constant doping profile in a given material\n(define NAME \"Body\")\n; - Common dopants: \n; \"PhosphorusActiveConcentration\" | \"ArsenicActiveConcentration\"\n; | \"BoronActiveConcentration\" \n(define Boron \"BoronActiveConcentration\")\n(define Phosphorus \"PhosphorusActiveConcentration\")\n(define Arsenic \"ArsenicActiveConcentration\")\n\n;-------------------------------------------------------------------------------\n; Doping in Source\n(sdedr:define-constant-profile\n\t\"Const.Source\"\n\tPhosphorus\n\t734826732508378562560\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Source\"\n\t\"Const.Source\"\n\t\"R.Source\"\n\t0\n\t\"Replace\"\n)\n\n\n; Doping in Short_Gate\n(sdedr:define-constant-profile\n\t\"Const.Short_Gate\"\n\tArsenic\n\t739897035839617368064\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Short_Gate\"\n\t\"Const.Short_Gate\"\n\t\"R.Short_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in R.Long_Gate\n(sdedr:define-constant-profile\n\t\"Const.Long_Gate\"\n\tPhosphorus\n\t941714684322363867136\n\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Long_Gate\"\n\t\"Const.Long_Gate\"\n\t\"R.Long_Gate\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Drain\n(sdedr:define-constant-profile\n\t\"Const.Drain\"\n\tPhosphorus\n\t132531686885463228416\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Drain\"\n\t\"Const.Drain\"\n\t\"R.Drain\"\n\t0\n\t\"Replace\"\n)\n\n; Doping in Gate\n(sdedr:define-constant-profile\n\t\"Const.Gate\"\n\tPhosphorus\n\t1e20\n)\n(sdedr:define-constant-profile-region\n\t\"Place.Gate\"\n\t\"Const.Gate\"\n\t\"R.Gate\"\n\t0\n\t\"Replace\"\n)\n;-------------------------------------------------------------------------------\n\n;(sdedr:define-constant-profile (string-append \"DC.\" NAME)\n;\t\"PhosphorusActiveConcentration\" 1e20\n;)\n;(sdedr:define-constant-profile-material (string-append \"CPM.\" NAME)\n;\t(string-append \"DC.\" NAME) \"Silicon\"\n;)\n\n\n\n; Creating a box-shaped refinement specification \n(define RNAME \"Overall\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME) \n\t\"Rectangle\"  \n\t(position Xmin Ymin 0)  (position Xmax Ymax 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n(define RNAME2 \"Gate\")\n(sdedr:define-refinement-window (string-append \"RW.\" RNAME2) \n\t\"Rectangle\"  \n\t(position Xmin (+ Ymax tox) 0)  (position Xmax (+ Ymax tox tg) 0) \n)\n(sdedr:define-refinement-size (string-append \"RS.\" RNAME2) \n\t(/ Ltotal 12) (/ Ymax 7) \n\t0.0004 0.0004 \n)\n\n; (sdedr:define-refinement-function(string-append \"RS.\" RNAME)\n;   \"DopingConcentration\" \"MaxTransDiff\" 1.0\n; )\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"Silicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n\n\n(sdedr:define-refinement-function\n\t(string-append \"RS.\" RNAME2)\n\t\"MaxLenInt\" \n\t\"PolySilicon\"\n\t\"Oxide\"\n\t0.0004\n\t1.1\n)\n  \n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME) \n\t(string-append \"RS.\" RNAME)\n\t(string-append \"RW.\" RNAME)\n)\t\n\n(sdedr:define-refinement-placement\n\t(string-append \"RP.\" RNAME2) \n\t(string-append \"RS.\" RNAME2)\n\t(string-append \"RW.\" RNAME2)\n)\n\n(sdesnmesh:tensor \"Mesh {\n    maxBndCellSize direction \\\"x\\\" 0.0000001\n    maxBndCellSize direction \\\"y\\\" 0.0000001\n    maxCellSize region \\\"Region_0\\\" 0.1\n    window \\\"testbox\\\" 0.8 1.2 0.8 1.2 0.8 1.2\n    minNumberOfCells window \\\"testbox\\\" 20\n    grading = { 1.1 1.1 1.1 }\n}\")\n\n\n(sde:build-mesh \"-gtdr -rect\" \"${path}n${tid}_msh\")",
        "input": ""
    }
]