# Device Modeling
This section of the dataset contains sparse matrices related to device modeling. More specifically, this contains matrices related to the modeling of semiconductor devices, including MOSFETs, ReRAM, and other devices.

## kmc_potential_0
Domain: Device simulation of a 2x2 cross-bar array

### Caracteristics
- Type:
- Size: 403605x403605, 10007089 nnz
- Used in: Linear system solving

|                 | Initial  | LU | Fill-in | Depth |
|-----------------|----------|----|---------|-------|
| kmc_potential_0 | 10007089 |    |         |       |
| RCM             |          |    |         |       |
| AMD             |          |    |         |       |
| ND              |          |    |         |       |

### References
- [Accelerated Atomistic Kinetic Monte Carlo Simulations of Resistive Memory Arrays](https://ieeexplore.ieee.org/abstract/document/10793135)


## kmc_potential_1
Domain: Device simulation of a 3x3 cross-bar array

### Caracteristics
- Type:
- Size: 1632355x1632355, 41208963 nnz
- Used in: Linear system solving

|                 | Initial  | LU | Fill-in | Depth |
|-----------------|----------|----|---------|-------|
| kmc_potential_1 | 41208963 |    |         |       |
| RCM             |          |    |         |       |
| AMD             |          |    |         |       |
| ND              |          |    |         |       |

### References
- [Accelerated Atomistic Kinetic Monte Carlo Simulations of Resistive Memory Arrays](https://ieeexplore.ieee.org/abstract/document/10793135)


## qubit_fem_b4
Domain: 

### Caracteristics
- Type:
- Size: 116380x116380, 2517228 nnz
- Used in: Eigenvalue problem

|              | Initial | LU | Fill-in | Depth |
|--------------|---------|----|---------|-------|
| qubit_fem_b4 | 2517228 |    |         |       |
| RCM          |         |    |         |       |
| AMD          |         |    |         |       |
| ND           |         |    |         |       |

### References