[System] You are an expert US patent attorney. Draft a set of independent and dependent claims based on the provided invention description. Use correct USPTO formatting.

[User]
Title: Optical Path Control Device

Technical Field and Background:
Patent Literature 1 (Japanese Patent Application Laid-open Publication No. 2009-276747) discloses a wavelength selective switch to be used in a wavelength division multiplex system. This wavelength selective switch has a plurality of fiber ports arranged in a fiber port array and a plurality of optical elements capable of operating in conjunction with the plurality of fiber ports. Furthermore, this wavelength selective switch has a dispersive element and a switching element. The dispersive element decomposes at least one optical signal into a plurality of wavelength components. The switching element is composed of MEMS (Micro Electro Mechanical System) mirrors and configured to guide one selected from the plurality of wavelength components to one selected from the plurality of fiber ports. Patent Literature 2 (Japanese Translation of PCT Application Publication No. 2010-509639) discloses an optical switch. This optical switch has two fiber port arrays each of which has a plurality of fiber ports. Each fiber port array is configured either with N input fiber ports and 1 output fiber port or with 1 input fiber port and N output fiber ports. Light beams input from the two respective fiber port arrays are guided to two respective MEMS mirrors by a beam guide element disposed immediately in front of a switching element.

Invention Disclosure:
In an optical path control device, a light input section 1 forms optical apertures 61a, 61b to output dispersed beams L2a, L2b, respectively, so that propagation angles of the dispersed beams L2a, L2b in an YZ plane are different from each other, at a focal position on the dispersive element 5 side of an optical power element 6. The dispersed beams L2a, L2b propagating at their respective angles different from each other in the YZ plane are individually coupled to optical deflectors 7a, 7b, respectively.

[Assistant]
1. An optical path control device comprising first to thirteenth elements,
wherein the first element includes a first input port to which a first wavelength-multiplexed beam is input and a second input port to which a second wavelength-multiplexed beam is simultaneously input,
wherein the second element is comprised of the third and fourth elements and is an anamorphic converter configured to convert an aspect ratio of beam spots of the first and second wavelength-multiplexed beams input from the first and second input ports,
wherein the third element includes first and second optical power elements arranged in juxtaposition in propagation directions of the first and second wavelength-multiplexed beams and configured to converge the first and second wavelength-multiplexed beams in a plane spanned by the propagation directions of the first and second wavelength-multiplexed beams and a first direction,
wherein the fourth element includes a third optical power element configured to collimate the first and second wavelength-multiplexed beams in a plane spanned by a second direction perpendicular to the first direction and the propagation directions of the wavelength-multiplexed beams,
wherein the fifth element is a first dispersive element configured to rotate a propagation direction of light of each wavelength included in each of the first and second wavelength-multiplexed beams around an axis along the first direction depending upon the wavelength, in a plane spanned by the propagation directions of the first and second wavelength-multiplexed beams output from the second element and the second direction, thereby to generate each of a plurality of first dispersed beams and a plurality of second dispersed beams characterized by wavelengths,
wherein the sixth element includes a fourth optical power element configured to converge each of the first and second dispersed beams and align propagation directions of the first and second dispersed beams with each other, in a plane spanned by the propagation directions of the first and second dispersed beams output from the fifth element and the second direction,
wherein the seventh element is first and second optical deflectors configured to rotate each of the first and second dispersed beams around an axis along a third direction perpendicular to the first direction, in a plane spanned by the propagation directions of the first and second dispersed beams output from the sixth element and the first direction, the first and second optical deflectors being provided in juxtaposition in the first direction,
wherein the eighth element includes a fifth optical power element configured to rotate each of the first and second dispersed beams output from the seventh element around an axis along a fourth direction perpendicular to the third direction depending upon the wavelength, in a plane spanned by the propagation directions of the first and second dispersed beams output from the seventh element and the third direction,
wherein the ninth element is a second dispersive element configured to multiplex each of the first and second dispersed beams, in a plane spanned by the propagation directions of the first and second dispersed beams output from the eighth element and the third direction, to generate first and second multiplexed beams,
wherein the tenth element is comprised of the eleventh and twelfth elements and is an anamorphic converter configured to convert an aspect ratio of beam spots of the first and second multiplexed beams,
wherein the eleventh element includes sixth and seventh optical power elements configured to converge the first and second multiplexed beams in a plane spanned by propagation directions of the first and second multiplexed beams and the fourth direction,
wherein the twelfth element includes an eighth optical power element configured to converge the first and second multiplexed beams in a plane spanned by the propagation directions of the first and second multiplexed beams and the third direction,
wherein the thirteenth element includes first and second output ports configured to output the first and second multiplexed beams, respectively, output from the tenth element,
wherein the first element forms first and second optical apertures to output the first and second dispersed beams, respectively, so that propagation angles of the first and second dispersed beams are different from each other in a second plane spanned by the propagation directions of the first and second dispersed beams and the first direction, at a focal position on the fifth element side of the sixth element, and
wherein the first and second dispersed beams having propagated at the respective angles different from each other in the second plane are individually coupled to the first and second optical deflectors, respectively.

2. The optical path control device according to claim 1,
wherein the first and second input ports are arranged in juxtaposition in the first direction, and
wherein the first element forms third and fourth optical apertures to output the first and second wavelength-multiplexed beams, respectively, so that propagation angles of the first and second wavelength-multiplexed beams are different from each other in a second plane spanned by the propagation directions of the first and second wavelength-multiplexed beams and the first direction, at a focal position on the first element side of the third element.

3. The optical path control device according to claim 2,
wherein optical axes of the first and second wavelength-multiplexed beams intersect with each other, between the third and fourth optical apertures and the first and second input ports in the propagation directions of the first and second wavelength-multiplexed beams.

4. The optical path control device according to claim 1,
wherein a focal position of the first element in the propagation directions of the first and second wavelength-multiplexed beams is coincident with a focal position on the first element side of the first optical power element in the directions, and
wherein the first element makes the first and second wavelength-multiplexed beams propagate at respective angles different from each other in the plane spanned by the propagation directions of the first and second wavelength-multiplexed beams and the first direction.

5. The optical path control device according to claim 1,
wherein the first element further includes a tenth optical power element configured to adjust beam diameters of the first and second dispersed beams at the first and second optical apertures.

6. The optical path control device according to claim 1,
wherein each of the first and second optical power elements includes a plurality of lenses arranged as divided along the first direction.

7. The optical path control device according to claim 1,
wherein each of the sixth to eighth optical power elements includes a plurality of lenses arranged as divided along the fourth direction.

8. The optical path control device according to claim 1,
wherein an optical power of the first optical power element and an optical power of the second optical power element are equal to each other.

9. The optical path control device according to claim 1,
wherein an optical power of the sixth optical power element and an optical power of the seventh optical power element are equal to each other.


[System] You are an expert US patent attorney. Draft a set of independent and dependent claims based on the provided invention description. Use correct USPTO formatting.

[User]
Title: Zoom Lens And Image Pickup Apparatus Including The Same

Technical Field and Background:
1. Field of the Invention The present invention relates to a zoom lens, which is suitable for, for example, an image pickup optical system used in an image pickup apparatus such as a digital still camera, a video camera, a monitoring camera, a broadcasting camera, a silver-halide film camera, or the like. 2. Description of the Related Art In recent years, image pickup apparatus using solid-state image pickup elements or silver-halide films have been increased in functionality while the entire apparatus have been reduced in size. As image pickup optical systems to be used in those image pickup apparatus, a small zoom lens having a high zoom ratio, a wide angle of view, and high optical performance over an entire zoom range even in the periphery of a screen has been sought for. As a zoom lens that is small as the entire system and has a high zoom ratio, there has been known a positive lead type zoom lens including, in order from an object side to an image side, a first lens unit having a positive refractive power, a second lens unit having a negative refractive power, a third lens unit having a positive refractive power, and a rear lens group including at least one lens unit arranged subsequently to the third lens unit. In a zoom lens, aberration that has occurred in a first lens unit is enlarged by a second lens unit and subsequent lens units. Thus, when a higher zoom ratio is realized, it is important to suppress aberration occurring in the first lens unit as much as possible. Among various aberrations occurring in the first lens unit, aberration that occurs in a large amount is the secondary spectrum of axial chromatic aberration at a telephoto end. Hitherto, in order to suppress the secondary spectrum of axial chromatic aberration at a telephoto end, a low dispersion material having high relative partial dispersion has been used for a positive lens in a first lens unit. Moreover, in order to correct the above-mentioned secondary spectrum of the axial chromatic aberration that has occurred in the first lens unit, a material having high relative partial dispersion has been used for a positive lens in a third lens unit having a positive refractive power. In Japanese Patent Application Laid-Open No. 2010-91788, there is disclosed a zoom lens having a high zoom ratio in which anomalous dispersion materials are used as materials of positive lenses in a first lens unit and a third lens unit, to thereby satisfactorily correct the secondary spectrum of chromatic aberration. In Japanese Patent Application Laid-Open No. 2010-32700, there is disclosed a zoom lens in which a third lens unit includes a lens formed of a material having an anomalous dispersion characteristic. When a material having a strong anomalous dispersion characteristic is used to suppress the secondary spectrum of axial chromatic aberration at a telephoto end as in the zoom lenses disclosed in Japanese Patent Application Laid-Open No. 2010-91788 and Japanese Patent Application Laid-Open No. 2010-32700, lateral chromatic aberration is increased at a wide angle end. In order to satisfactorily correct axial chromatic aberration and lateral chromatic aberration over an entire zoom range while realizing a higher magnification, it is important to appropriately set a power arrangement of each of lens units and materials of lenses in each of the lens units.

Invention Disclosure:
Provided is a zoom lens, including, in order from an object side to an image side: a first lens unit having a positive refractive power; a second lens unit having a negative refractive power; a third lens unit having a positive refractive power; and a rear lens group including at least one lens unit, in which an interval between each pair of adjacent lens units is changed during zooming, and materials of lenses included in a lens unit arranged closest to the image side are appropriately set.

[Assistant]
1. A zoom lens comprising, in order from an object side to an image side:
a first lens unit having a positive refractive power;
a second lens unit having a negative refractive power;
a third lens unit having a positive refractive power; and
a rear lens group including at least one lens unit,
wherein an interval between each pair of adjacent lens units is changed during zooming,
wherein a lens unit arranged closest to the image side includes at least two lenses,
wherein materials of all of lenses included in the lens unit arranged closest to the image side comprise a material satisfying the following conditional expression:
0.0 <θgFr− (−1.520×10 −7 ×νdr 3 +5.213×10 ×νdr 2 −5.500×10 −3 ×νdr+ 0.730),

2. The zoom lens according to claim 1, wherein the following conditional expression is satisfied:
1.5< ft/f 1<5.0,
where ft represents a focal length of the zoom lens at a telephoto end.

3. The zoom lens according to claim 1, wherein the following conditional expression is satisfied:
−30.0< ft/f 2<−5.0,
where f 2 represents a focal length of the second lens unit, and ft represents a focal length of the zoom lens at a telephoto end.

4. The zoom lens according to claim 1, wherein the following conditional expression is satisfied:
5.0< ft/f 3<20.0,
where f 3 represents a focal length of the third lens unit, and ft represents a focal length of the zoom lens at a telephoto end.

5. The zoom lens according to claim 1, wherein the materials of the all of lenses included in the lens unit arranged closest to the image side comprise a material satisfying the following conditional expression:
10.0<ν dr< 100.0,
where νdr represents the Abbe number of the material of the lens included in the lens unit arranged closest to the image side.

6. The zoom lens according to claim 1, wherein the following conditional expression is satisfied:
40.0<ν drp< 100.0,
where νdrp represents an Abbe number of a material of a positive lens included in the lens unit arranged closest to the image side.

7. The zoom lens according to claim 1, wherein the following conditional expression is satisfied:
10.0<ν drn< 40.0,
where νdrn represents an Abbe number of a material of a negative lens included in the lens unit arranged closest to the image side.

8. The zoom lens according to claim 1, wherein the following conditional expression is satisfied:
−30.0< m 1/ fw<− 3.0,
where m 1 represents a movement amount of the first lens unit during zooming from the wide angle end to a telephoto end.

9. The zoom lens according to claim 1, wherein the following conditional expression is satisfied:
−10.0< m 3/ fw<− 0.5,
where m 3 represents a movement amount of the third lens unit during zooming from the wide angle end to a telephoto end.

10. The zoom lens according to claim 1, wherein the following conditional expression is satisfied:
2.0< ft/|fr|< 15.0,
where fr represents a focal length of the lens unit arranged closest to the image side, and ft represents a focal length of the zoom lens at a telephoto end.

11. The zoom lens according to claim 1, wherein the following conditional expression is satisfied:
1.6 <Ndrn< 2.3,
where Ndrn represents a refractive index of a material of a negative lens included in the lens unit arranged closest to the image side.

12. The zoom lens according to claim 1, wherein the lens unit arranged closest to the image side consists of one positive lens and one negative lens arranged with an air gap.

13. The zoom lens according to claim 1, configured to form an image on a solid-state image pickup element.

14. An image pickup apparatus, comprising:
a zoom lens comprising, in order from an object side to an image side:
a first lens unit having a positive refractive power;
a second lens unit having a negative refractive power;
a third lens unit having a positive refractive power; and
a rear lens group including at least one lens unit,
wherein an interval between each pair of adjacent lens units is changed during zooming,
wherein a lens unit arranged closest to the image side includes at least two lenses,
wherein materials of all of lenses included in the lens unit arranged closest to the image side comprise a material satisfying the following conditional expression:
0.0<θ gFr −(−1.520×10 −7 ×νdr 3 +5.213×10 −5 ×νdr 2 −5.500×10 −3 ×νdr+ 0.730),


[System] You are an expert US patent attorney. Draft a set of independent and dependent claims based on the provided invention description. Use correct USPTO formatting.

[User]
Title: Semiconductor Device

Technical Field and Background:
1. Field of the Invention The present invention relates to a semiconductor device and a driving method thereof. Note that in this specification, a semiconductor device refers to a device that includes a circuit including a semiconductor element (e.g., a transistor, a diode, a resistor, or a capacitor). Alternatively, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics. For example, an integrated circuit, a chip including an integrated circuit, a display device, a light-emitting device, an electronic device, and the like are included in a semiconductor device or include a semiconductor device in some cases. 2. Description of the Related Art A differential circuit is used for an operational amplifier, a comparator, or the like. A comparator is one of the main circuits of an analog-digital converter (hereinafter, it may be referred to as an ADC). Variations in the electric characteristics of transistors included in a comparator generate an offset voltage at a differential circuit included in the comparator. In the case where such an offset voltage is generated, even when the same voltage is applied to two input terminals of the comparator, the comparator determines the offset voltage as a potential difference between the two input terminals; thus, the comparator outputs a signal with an unexpected output level. Thus, it is necessary to correct the offset voltage of the differential circuit to accurately perform A/D conversion. For example, in Patent Document 1, an ADC is provided with a means for measuring the offset voltage of a comparator. Reference voltages for comparators are set based on offset voltages measured by the measurement means. Further, in Patent Document 1, data for setting these reference voltages is written to a memory circuit, and an operation of correcting an offset voltage is not performed in using the ADC. [Patent Document 1] Japanese Published Patent Application No. 2002-319863

Invention Disclosure:
A sample-and-hold circuit including a transistor and a capacitor is connected to the differential circuit. The sample-and-hold circuit acquires voltage for correcting the offset voltage of the differential circuit by charging or discharging the capacitor through sampling operation. Then, it holds the potential of the capacitor through holding operation. In normal operation of the differential circuit, the output potential of the differential circuit is corrected by the potential held by the capacitor. The transistor in the sample-and-hold circuit is preferably a transistor whose channel is formed using an oxide semiconductor. An oxide semiconductor transistor has extremely low leakage current; thus, a change in the potential held in the capacitor of the sample-and-hold circuit can be minimized.

[Assistant]
1. A semiconductor device comprising:
a first circuit comprising a first terminal, a second terminal, and a first output terminal, the first circuit configured to output a potential corresponding to a difference between the first terminal and the second terminal; and
a second circuit comprising a third terminal and a second output terminal, the second circuit configured to amplify a potential being input from the third terminal,
wherein the first terminal and the second terminal are electrically connected to each other through a first transistor,
wherein the first output terminal is electrically connected to the third terminal, one of a source and a drain of a second transistor, and one of a source and a drain of a third transistor,
wherein another of the source and the drain of the third transistor is electrically connected to a gate of the second transistor and one electrode of a capacitor,
wherein a semiconductor layer of each of the first transistor and the second transistor comprises silicon, and
wherein a semiconductor layer of the third transistor comprises indium, gallium, and zinc.

2. The semiconductor device according to claim 1, wherein a gate of the first transistor and a gate of the third transistor are electrically connected to each other.

3. The semiconductor device according to claim 1, wherein another of the source and the drain of the second transistor and another electrode of the capacitor are electrically connected to each other.

4. The semiconductor device according to claim 1, wherein a reference potential is input to the first terminal.

5. The semiconductor device according to claim 1,
wherein the first terminal is electrically connected to one of a source and a drain of a fourth transistor,
wherein the second output terminal is electrically connected to one of a source and a drain of a fifth transistor, and
wherein a gate of the fourth transistor and a gate of the fifth transistor are electrically connected to each other.

6. The semiconductor device according to claim 5, wherein a semiconductor layer of each of the fourth transistor and the fifth transistor comprises silicon.

7. The semiconductor device according to claim 1, wherein the semiconductor layer of the third transistor comprises a region comprising c-axis aligned crystals.

8. The semiconductor device according to claim 1, wherein the first circuit is a differential circuit.

9. The semiconductor device according to claim 1, wherein the second circuit is a common source amplifier circuit or a source follower circuit.

10. A semiconductor device comprising:
a first circuit comprising a first terminal, a second terminal, and a first output terminal, the first circuit configured to output a potential corresponding to a difference between the first terminal and the second terminal; and
a second circuit comprising a third terminal and a second output terminal, the second circuit configured to amplify a potential being input from the third terminal,
wherein the first terminal and the second terminal are electrically connected to each other through a first transistor,
wherein the first output terminal is electrically connected to the third terminal, one of a source and a drain of a second transistor, and one of a source and a drain of a third transistor,
wherein another of the source and the drain of the third transistor is electrically connected to a gate of the second transistor and one electrode of a capacitor,
wherein a semiconductor layer of each of the first transistor and the second transistor comprises silicon, and
wherein a semiconductor layer of the third transistor comprises indium, tin, and zinc.

11. The semiconductor device according to claim 10, wherein a gate of the first transistor and a gate of the third transistor are electrically connected to each other.

12. The semiconductor device according to claim 10, wherein another of the source and the drain of the second transistor and another electrode of the capacitor are electrically connected to each other.

13. The semiconductor device according to claim 10, wherein a reference potential is input to the first terminal.

14. The semiconductor device according to claim 10,
wherein the first terminal is electrically connected to one of a source and a drain of a fourth transistor,
wherein the second output terminal is electrically connected to one of a source and a drain of a fifth transistor, and
wherein a gate of the fourth transistor and a gate of the fifth transistor are electrically connected to each other.

15. The semiconductor device according to claim 14, wherein a semiconductor layer of each of the fourth transistor and the fifth transistor comprises silicon.

16. The semiconductor device according to claim 10, wherein the semiconductor layer of the third transistor comprises a region comprising c-axis aligned crystals.

17. The semiconductor device according to claim 10, wherein the first circuit is a differential circuit.

18. The semiconductor device according to claim 10, wherein the second circuit is a common source amplifier circuit or a source follower circuit.


[System] You are an expert US patent attorney. Draft a set of independent and dependent claims based on the provided invention description. Use correct USPTO formatting.

[User]
Title: Pin Connector Structure And Method

Technical Field and Background:
Semiconductor dies are often coupled to other circuitry in an electronic system through a substrate. The substrate includes interconnection circuitry that routes power and data between other electrical components and the semiconductor die that is coupled to the substrate. In pin connection structures, such as pin grid arrays, improved mechanical integrity and conductivity are desired. Voids in a joining matrix material can be detrimental in a number of ways, including reducing mechanical integrity and/or causing tilting of pins. It is desired to improve pin stability and to reduce voids in a matrix material joining pins to a substrate.

Invention Disclosure:
Embodiments pin connections, electronic devices, and methods are shown that include pin configurations to reduce voids and pin tilting and other concerns during pin attach operations, such as attachment to a chip package pin grid array. Pin head are shown that include features such as convex surfaces, a number of legs, and channels in pin head surfaces.

[Assistant]
1. A pin grid array, comprising;
a substrate, including a number of electrical connections;
a matrix material forming an interface with the electrical connections on the substrate; and
a number of pins including pin shafts, and having pin heads embedded in the matrix, wherein one or more pins includes a pin head having at least three legs extending at an angle with respect to the pin shaft between, but not including 0 and 90 degrees.

2. The pin grid array of claim 1, wherein the pin head includes a textured top surface.

3. The pin grid array of claim 2, wherein the textured top surface includes one or more channels.

4. The pin grid array of claim 1, wherein the matrix material includes solder.

5. The pin grid array of claim 4, wherein the solder includes a tin-antimony solder.

6. A method of forming a pin connection, comprising:
forming a pin, including a pin head having at least three legs extending at an angle with respect to the pin shaft between, but not including 0 and 90 degrees;
placing the pin head in contact with an electrical connection on a substrate surface; and
flowing solder around the pin head and in contact with the electrical connection to embed the pin head.

7. The method of claim 6, further including channeling gas bubbles from beneath the pin head using gaps formed by the at least three legs.

8. The method of claim 6, further including forming one or more channels in the top surface.

9. The method of claim 6, wherein the pin grid connection is formed as part of a pin grid array.


[System] You are an expert US patent attorney. Draft a set of independent and dependent claims based on the provided invention description. Use correct USPTO formatting.

[User]
Title: Local Transformer Level Grid Management Systems And Methods

Technical Field and Background:
One or more exemplary embodiments relate to management of an electrical distribution system at the local transformer and metering level. In particular, these embodiments relate to advanced features of a distributed remotely-readable electricity metering system including monitoring and control of a transformer's electrical and physical state and its loads. For example, the last leg of an electrical distribution system typically involves a medium tension (from 11 kV to 35 kV) feeder connected to one or more distribution transformers that step the voltage down to the end-user level of 120-480 volts. In turn, the outputs of each of these transformers are connected to end-user residences or businesses. In the past, low-voltage wires often exited the transformer and ran from pole to pole, creating a low voltage network for connection to each house or business, finally entering the meter and then the building electrical panel. End-user electricity theft typically occurs when end-users make unauthorized connections to the low-voltage network between the secondary of the transformer and the meter. As long as such low-voltage attachment points exist, such theft remains difficult to avoid. One solution involves minimizing or eliminating altogether any exposed un-metered low-voltage conductor between the transformer secondary and the meter, leaving no place for the would-be thief to connect. The practicality of this approach is complicated by the need to keep the electricity meter accessible to meter reading personnel. Moreover, even if the low-voltage conductor could be fortified or protected in some way from illicit connection, the further problem of meter tampering remains. Automated Meter Reading (“AMR”) systems are known. An exemplary AMR system is described in U.S. Pat. No. 7,596,459, the contents of which are incorporated herein by reference. Also see Exhibit 4 of U.S. Provisional Application No. 61/495,437. Because AMR meters are remotely readable, they are not required to be within easy access or view of meter readers, and therefore may be located on the pole, near the transformer. An example of such a system is Quadlogic Control Corporation's Energy Guard™ (see, for example, www.quadlogic.com/productsEG.html). One or more exemplary embodiments are directed at improving an Energy Guard type of anti-theft remote metering and disconnect system via implementation of novel transformer and utility system management elements. One or more exemplary embodiments have a meter box (a box containing the metering devices) either adjacent to or integrated with the transformer case itself, and thus beyond safe or practical access of thieves. With an embodiment comprising the metering system and transformer integrated within a shared secure metal case with anti-tampering features, there remains no exposed un-metered attachment point for electricity theft. Dangerous and impossible-to-tap medium tension power enters the box (i.e., the enclosure containing both the transformer and the distributed metering devices) and low-voltage metered power exits. In one or more exemplary embodiments, in addition to containing the transformer and a multi-point metering array, certain advanced AMR systems include remotely operable cutoff relays within the same case. In cases of theft, tampering, or non-payment, for example, the power authority can remotely disconnect and, upon resolution, remotely reconnect power to individual customers. Distribution transformers often are constructed as sealed metal “cans.” Since, under load conditions, the internal wire windings may become quite hot, the can typically is filled with electrically-insulating but heat-conducting oil to dissipate the heat. This oil is critical to the proper and efficient operation of such transformers. Various conditions may cause a transformer to overheat and become inefficient. Examples include: (a) if the oil level becomes low (e.g., the can leaks); or (b) if the electrical load is too high. Indeed, if the oil level is too low, the transformer itself may “blow” before its protective fuse does—an expensive and dangerous consequence. Various devices exist to detect transformer overheating conditions from the ground (visible “pop-up” indicators, etc.) and at the higher system level of electrical substations, so-called SCADA systems (supervisory control and data acquisition) for monitoring large transformers are well-known but remain expensive.

Invention Disclosure:
A remotely readable apparatus for metering of a plurality of electricity consumer lines, comprising: (a) a meter head that measures electricity usage for each of the plurality of electricity consumer lines; and (b) sensors that sense environmental conditions in a second housing enclosing a distribution transformer that steps down voltage from a distribution level to a consumer level, said one sensors in communication with said meter head and not operable to sense environmental conditions in said first housing, and wherein said meter head connects and disconnects service on said plurality of electricity consumer lines in response to information received from said sensors; wherein a transponder transmits data received to/from said meter head to/from a remotely located computer, and said meter head is operable, based on data received from said transponder, to connect/disconnect service on said electricity consumer lines.

[Assistant]
1. A remotely readable apparatus for metering of a plurality of electricity consumer lines, comprising:
a meter head enclosed with a first housing, said meter head comprising one or more metering points, wherein said meter head measures electricity usage for each of the plurality of electricity consumer lines; and
one or more sensors that sense environmental conditions in a second housing enclosing a distribution transformer that steps down voltage from a distribution level to a consumer level, said one or more sensors in electrical communication with said meter head and wherein said sensors are not operable to sense environmental conditions in said first housing, and wherein said meter head is operable to connect and disconnect service on one or more of said plurality of electricity consumer lines in response to information received from said one or more sensors, without affecting voltage supplied to said distribution transformer;
wherein a transponder is in communication with said meter head and transmits data received from said meter head to a remotely located computer, and transmits to said meter head data received from said remotely located computer,
wherein said meter head transmits to said transponder data based on said data received from said one or more sensors,
wherein said meter head is operable, based on data received from said transponder and responsive to said data based on said data received from said one or more sensors, to connect and disconnect service on said electricity consumer lines, and
wherein said meter head is operable to connect and disconnect service on each one of said plurality of electricity consumer lines in a rotating disconnect/connect sequence, and intermittent power is provided on each of said electricity consumer lines.

2. An apparatus as in claim 1, wherein said one or more sensors comprise a temperature sensor that measures a temperature of said distribution transformer, and said meter head is in electrical communication with said temperature sensor.

3. An apparatus as in claim 1, wherein said one or more sensors comprise an oil-level sensor that measures level of oil in said distribution transformer, and said meter head is in electrical communication with said oil-level sensor.

4. An apparatus as in claim 1, wherein said meter head is operable, in response to an interruption in flow of electricity being received from a distribution transformer, to disconnect service on one or more of said electricity consumer lines.

5. An apparatus as in claim 4, wherein service is disconnected via actuation of corresponding relays, and power to actuate said corresponding relays is stored in and received from a battery back-up system.

6. An apparatus as in claim 4, wherein service is disconnected via actuation of corresponding relays, and power to actuate said corresponding relays is stored in and received from a capacitive storage system.

7. An apparatus as in claim 4, wherein said meter head is operable, in response to restoration of electricity being received from a distribution transformer, re-connect service on said electricity consumer lines.

8. An apparatus as in claim 4, wherein said meter head is operable to store data reflecting, for each relay, a state existing immediately prior to interruption of electricity flow, and wherein said meter head is operable to actuate corresponding relays to re-connect service on said electricity consumer lines so as to restore each of said relays to said state existing immediately prior to interruption of electricity flow.

9. An apparatus as in claim 4, wherein, in response to restoration of electricity being received from a distribution transformer, said meter head is operable to re-connect service on said electricity consumer lines, said re-connection being in a sequence selected to minimize a surge or excessive load on a substation network.

10. An apparatus as in claim 1, wherein said transponder is in communication with said meter head via power line communication.

11. A method of metering a plurality of electricity consumer lines, comprising:
measuring, via a meter head in a first housing, electricity usage for each of the plurality of electricity consumer lines; and
sensing environmental conditions in a second housing enclosing a distribution transformer that steps down voltage from a distribution level to a consumer level, via one or more sensors in electrical communication with said meter head and wherein said sensors are not operable to sense environmental conditions in said first housing, wherein said meter head is operable to connect and disconnect service on one or more of said plurality of electricity consumer lines in response to information received from said one or more sensors, without affecting voltage supplied to said distribution transformer, and wherein said meter head is operable to connect and disconnect service on each one of said plurality of electricity consumer lines in a rotating disconnect/connect sequence, and intermittent power is provided on each of said electricity consumer lines.


[System] You are an expert US patent attorney. Draft a set of independent and dependent claims based on the provided invention description. Use correct USPTO formatting.

[User]
Title: Sound Propagation And Perception For Autonomous Agents In Dynamic Environments

Technical Field and Background:
Current autonomous agent animation research models vision-based perception of agents using abstract perception queries such as line-of-sight ray casts and view cone intersections with the environment. Prior work has developed computational models for sound synthesis and propagation, with limited work that factors the perception of sound into agent behavior. In prior work, visual perception may be used for agent steering, while audio perception is uncommon.

Invention Disclosure:
Methods and systems for sound propagation and perception for autonomous agents in dynamic environments are described. Adaptive discretization of continuous sound signals allows one to obtain a minimal, yet sufficient sound packet representation (SPR) for human-like perception, and a hierarchical clustering scheme to facilitate approximate perception. Planar sound propagation of discretized sound signals exhibit acoustic properties such as attenuation, reflection, refraction, and diffraction, as well as multiple convoluted sound signals. Agent-based sound perceptions using hierarchical clustering analysis that accommodates natural sound degradation due to audio distortion facilitate approximate human-like perception.

[Assistant]
1. A device comprising:
a processor; and
a memory coupled with the processor, the memory having stored thereon executable instructions that when executed by the processor cause the processor to effectuate operations comprising:
providing information to an agent that arrives at a ground location of the agent, wherein:
the information comprises an impulse response of a plurality of packets at different frequency bands, and
the agent is virtual;
applying dynamic time warping to the plurality of packets; and
determining similarity values based on comparison of the applied dynamic time warping of the plurality of packets with sounds in a hierarchical clustering analysis database.

2. The device of claim 1, wherein the information further comprises a spread factor that is computed for each of the plurality of packets which indicates a frequency and amplitude changes due to each of the plurality of the packets interacting with a virtual environment.

3. The device of claim 1, wherein the information further comprises a spread factor that is computed for each of the plurality of packets that interact with a virtual environment, wherein the interaction with the virtual environment comprises reflection.

4. The device of claim 1, wherein the agent approximately localizes a sound source based on the plurality of packets it receives.

5. The device of claim 1, wherein the agent uses an attention model to facilitate sound identification in the presence of convoluted sounds, background noise, or sound novelty.

6. The device of claim 1, wherein the agent has sound perception that can be used as inputs to agent behavior controls to affect actions, motions, or decisions of the agent.

7. The device of claim 1, wherein the information further comprises a spread factor that is computed for each of the plurality of packets wherein the based on the each of the plurality of packets interaction with a virtual environment, wherein the interaction with the virtual environment comprises absorption.

8. The device of claim 1, further operations comprising:
determining that the similarity values are above a similarity threshold; and
after determining that the similarity values are above the similarity threshold, providing an approximate perception based on a lowest common ancestor in the hierarchical clustering analysis database.

9. The device of claim 8, further operations comprising using the approximate perception as a control signal to trigger a behavior of the agent.

10. The device of claim 1, wherein the information further comprises a spread factor that is computed for each of the plurality of packets that interact with a virtual environment, wherein the interaction with the virtual environment comprises diffusion.

11. The device of claim 1, wherein the information further comprises a spread factor that is computed for each of the plurality of packets that interact with a virtual environment, wherein the interaction with the virtual environment comprises amplitude attenuation.

12. A computer readable storage medium that is not a signal storing computer executable instructions that when executed by a computing device cause said computing device to effectuate operations comprising:
providing information to an agent that arrives at a ground location of the agent, wherein:
the information comprises an impulse response of a plurality of packets at different frequency bands, and
the agent is virtual;
applying dynamic time warping to the plurality of packets; and
determining similarity values based on comparison of the applied dynamic time warping of the plurality of packets with sounds in a hierarchical clustering analysis database.

13. The computer readable storage medium of claim 12, wherein the information further comprises a spread factor that is computed for each of the plurality of packets which indicates a frequency and amplitude changes due to each of the plurality of the packets interacting with a virtual environment.

14. The computer readable storage medium of claim 12, wherein the information further comprises a spread factor that is computed for each of the plurality of packets that interact with a virtual environment, wherein the interaction with the virtual environment comprises reflection or diffusion.

15. The computer readable storage medium of claim 12, wherein the agent approximately localizes a sound source based on the plurality of packets it receives.

16. The computer readable storage medium of claim 12, wherein the agent uses an attention model to facilitate sound identification in the presence of convoluted sounds, background noise, or sound novelty.

17. The computer readable storage medium of claim 12, wherein the agent has sound perception that can be used as inputs to agent behavior controls to affect actions, motions, or decisions of the agent.

18. The computer readable storage medium of claim 12, wherein the information further comprises a spread factor that is computed for each of the plurality of packets wherein the based on the each of the plurality of packets interaction with a virtual environment, wherein the interaction with the virtual environment comprises absorption or amplitude attenuation.

19. The computer readable storage medium of claim 12, further comprising:
determining that the similarity values are above a similarity threshold; and
after determining that the similarity values are above the similarity threshold, providing an approximate perception based on a lowest common ancestor in the hierarchical clustering analysis database.

20. The computer readable storage medium of claim 19, further comprising using the approximate perception as a control signal to trigger a behavior of the agent.


[System] You are an expert US patent attorney. Draft a set of independent and dependent claims based on the provided invention description. Use correct USPTO formatting.

[User]
Title: Method And Apparatus For Transmitting Ack/Nack In A Wireless Communication System Based On Tdd

Technical Field and Background:
Long term evolution (LTE) based on 3 rd generation partnership project (3GPP) technical specification (TS) release 8 is a promising next-generation mobile communication standard. As disclosed in 3GPP TS 36.211 V8.7.0 (2009-05) “Evolved Universal Terrestrial Radio Access (E-UTRA); Physical Channels and Modulation (Release 8)”, a physical channel of the LTE can be classified into a downlink channel, i.e., a physical downlink shared channel (PDSCH) and a physical downlink control channel (PDCCH), and an uplink channel, i.e., a physical uplink shared channel (PUSCH) and a physical uplink control channel (PUCCH). The PUCCH is an uplink control channel used for transmission of an uplink control signal such as a hybrid automatic repeat request (HARQ) positive-acknowledgement (ACK)/negative-acknowledgement (NACK) signal, a channel quality indicator (CQI), and a scheduling request (SR). Meanwhile, 3GPP LTE-advanced (LTE-A) which is an evolution of 3GPP LTE is under development. Examples of techniques employed in the 3GPP LTE-A include carrier aggregation and multiple input multiple output (MIMO) supporting four or more antenna ports. The carrier aggregation uses a plurality of component carriers. The component carrier is defined with a center frequency and a bandwidth. One downlink component carrier or a pair of an uplink component carrier and a downlink component carrier is mapped to one cell. When a user equipment receives a service by using a plurality of downlink component carriers, it can be said that the user equipment receives the service from a plurality of serving cells. A time division duplex (TDD) system uses the same frequency in downlink and uplink cases. Therefore, one or more downlink subframes are associated with an uplink subframe. The ‘association’ implies that transmission/reception in the downlink subframe is associated with transmission/reception in the uplink subframe. For example, when a transport block is received in a plurality of downlink subframes, the user equipment transmits HARQ ACK/NACK for the transport block in the uplink subframe associated with the plurality of downlink subframes. As a plurality of serving cells are introduced in the TDD system, an information amount of HARQ ACK/NACK is increased. Channel selection is one of methods for transmitting the increased HARQ ACK/NACK with a limited transmission bit. The channel selection is a method of allocating a plurality of radio resources and transmitting a modulated symbol by using any one of the plurality of radio resources. A variety of HARQ ACK/NACK information can be represented according to a signal constellation of a modulated symbol and a radio resource. Accordingly, there is a need for a method of allocating a resource to apply such a channel selection to a multiple carrier system supporting a plurality of serving cells.

Invention Disclosure:
Provided is a method of transmitting ACK/NACK in a TDD-based wireless communication system. The method includes: receiving M downlink subframes associated with an uplink subframe n in each of two serving cells; determining four candidate resources based on the M downlink subframes received in each of the two serving cells; and transmitting an ACK/NACK response for the M downlink subframes by using one resource selected from the four candidate resources in the uplink subframe n, wherein the two serving cells includes a first serving cell and a second serving cell, and wherein among the four candidate resources, a first resource and a second resource are associated with a PDSCH or a SPS release PDCCH for releasing semi-persistent scheduling received in the first serving cell, and a third resource and a fourth resources are associated with a PDSCH received in the second serving cell.

[Assistant]
1. A method of transmitting positive-acknowledgement (ACK)/negative-acknowledgement (NACK) in a time division duplex (TDD)-based wireless communication system in which M (M>2) downlink subframes are associated with an uplink subframe in each of two serving cells, the method performed by a user equipment (UE) and comprising:
receiving M downlink subframes associated with an uplink subframe n in each of the two serving cells; and
transmitting an ACK/NACK response for the M downlink subframes received in each of the two serving cells by using one resource selected from four candidate resources in the uplink subframe n,
wherein the two serving cells comprises a first serving cell and a second serving cell,
wherein, in the M downlink subframes received in the first serving cell,
if a physical downlink shared channel (PDSCH) indicated by detecting a first physical downlink control channel (PDCCH) with a downlink assignment index (DAI) value equal to 1 or a second PDCCH with a DAI value equal to 2 is received, or
if a first semi-persistent scheduling (SPS) release PDCCH with a DAI value equal to 1 or a second SPS release PDCCH with a DAI value equal to 2 is received,
among the four candidate resources, a first resource is determined based on a first control channel element (CCE) used in transmission of the first PDCCH or the first SPS release PDCCH, and
a second resource is determined based on a first CCE used in transmission of the second PDCCH or the second SPS release PDCCH.

2. The method of claim 1, wherein at least one downlink subframe among the M downlink subframes received in the first serving cell comprises a physical downlink control channel (PDCCH) in which a downlink grant is transmitted and a PDSCH corresponding to the PDCCH.

3. The method of claim 2, wherein the downlink grant includes a downlink assignment index (DAI) indicating an accumulative number of PDCCH with assigned PDSCH transmission.

4. The method of claim 1, wherein if a PDSCH, indicated by detection of a third PDCCH with a DAI value equal to 1 or a fourth PDCCH with a DAI value equal to 2 received in the M downlink subframes in the first serving cell, is received in the M downlink subframes in the second serving cell,
a third resource among the four candidate resources is determined based on a first CCE used in transmission of the third PDCCH,
and a fourth resource among the four candidate resources is determined based on a first CCE used in transmission of the fourth PDCCH.

5. The method of claim 1, wherein if a semi-persistent scheduling (SPS) physical downlink shared channel (PDSCH), which is a PDSCH having no corresponding physical downlink control channel (PDCCH), is received in the M downlink subframes received in the first serving cell,
a first resource among the four candidate resources is one resource selected from four resources configured by using a higher layer signal, and the selected one resource is indicated by a PDCCH indicating activation of semi-persistent scheduling.

6. The method of claim 5, wherein in the M downlink subframes received in the first serving cell,
if a PDSCH indicated by detecting a first PDCCH with a DAI value equal to 1 or if a first SPS release PDCCH with a DAI value equal to 1 is received,
a second resource among the four candidate resources is determined based on a first CCE used in transmission of the first PDCCH or the first SPS release PDCCH.

7. A user equipment (UE) operated in a time division duplex (TDD)-based wireless communication system in which M (M>2) downlink subframes are associated with an uplink subframe in each of two serving cells, the UE comprising:
a radio frequency (RF) unit configured to transmit or receive a radio signal; and
a processor coupled to the RF unit,
wherein the processor is configured to:
receive M downlink subframes associated with an uplink subframe n in each of the two serving cells, and
transmit an ACK/NACK response for the M downlink subframes received in each of the two serving cells by using one resource selected from four candidate resources in the uplink subframe n,
wherein the two serving cells comprises a first serving cell and a second serving cell,
wherein in the M downlink subframes received in the first serving cell,
if a physical downlink shared channel (PDSCH) indicated by detecting a first physical downlink control channel (PDCCH) with a downlink assignment index (DAI) value equal to 1 or a second PDCCH with a DAI value equal to 2 is received, or
if a first semi-persistent scheduling (SPS) release PDCCH with a DAI value equal to 1 or a second SPS release PDCCH with a DAI value equal to 2 is received,
among the four candidate resources, a first resource is determined based on a first control channel element (CCE) used in transmission of the first PDCCH or the first SPS release PDCCH, and
a second resource is determined based on a first CCE used in transmission of the second PDCCH or the second SPS release PDCCH.

8. The UE of claim 7, wherein at least one downlink subframe among the M downlink subframes received in the first serving cell comprises a physical downlink control channel (PDCCH) in which a downlink grant is transmitted and a PDSCH corresponding to the PDCCH.

9. The UE of claim 8, wherein the downlink grant includes a downlink assignment index (DAI) indicating an accumulative number of PDCCH with assigned PDSCH transmission.

10. The UE of claim 7, wherein if a PDSCH, indicated by detection of a third PDCCH with a DAI value equal to 1 or a fourth PDCCH with a DAI value equal to 2 received in the M downlink subframes in the first serving cell, is received in the M downlink subframes in the second serving cell,
a third resource among the four candidate resources is determined based on a first CCE used in transmission of the third PDCCH,
and a fourth resource among the four candidate resources is determined based on a first CCE used in transmission of the fourth PDCCH.

11. The UE of claim 7, wherein if a semi-persistent scheduling (SPS) physical downlink shared channel (PDSCH), which is a PDSCH having no corresponding physical downlink control channel (PDCCH), is received in the M downlink subframes received in the first serving cell,
a first resource among the four candidate resources is one resource selected from four resources configured by using a higher layer signal, and the selected one resource is indicated by a PDCCH indicating activation of semi-persistent scheduling.

12. The UE of claim 11, wherein, in the M downlink subframes received in the first serving cell,
if a PDSCH indicated by detecting a first PDCCH with a DAI value equal to 1 or if a first SPS release PDCCH with a DAI value equal to 1 is received,
a second resource among the four candidate resources is determined based on a first CCE used in transmission of the first PDCCH or the first SPS release PDCCH.


[System] You are an expert US patent attorney. Draft a set of independent and dependent claims based on the provided invention description. Use correct USPTO formatting.

[User]
Title: Semiconductor Device And Method For Fabricating The Same

Technical Field and Background:
Attention has been focused on a technique for forming a transistor including a semiconductor thin film formed over a substrate having an insulating surface (also referred to as a thin film transistor). The transistor is applied to a wide range of electronic devices such as an integrated circuit (IC) or an image display device (display device). A silicon-based semiconductor material is widely known as a material for a semiconductor thin film applicable to a transistor. As another material, an oxide semiconductor has been attracting attention. For example, a transistor including an oxide semiconductor containing indium (In), gallium (Ga), and zinc (Zn) is disclosed in Patent Document 1. An oxide semiconductor film can be formed by a technique for forming a thin film, such as a sputtering method. Further, the oxide semiconductor film can be formed at a relatively low temperature compared to a silicon semiconductor or the like. Hence, the oxide semiconductor film can be formed to overlap with another transistor. For example, Patent Document 2 discloses a semiconductor device in which a cell area is reduced by providing, over a transistor including silicon, a transistor including an oxide semiconductor layer serving as a channel formation region.

Invention Disclosure:
To provide a highly reliable semiconductor device exhibiting stable electrical characteristics. To fabricate a highly reliable semiconductor device. Included are an oxide semiconductor stack in which a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer are stacked, a source and a drain electrode layers contacting the oxide semiconductor stack, a gate electrode layer overlapping with the oxide semiconductor layer with a gate insulating layer provided therebetween, and a first and a second oxide insulating layers between which the oxide semiconductor stack is sandwiched. The first to the third oxide semiconductor layers each contain indium, gallium, and zinc. The proportion of indium in the second oxide semiconductor layer is higher than that in each of the first and the third oxide semiconductor layers. The first oxide semiconductor layer is amorphous. The second and the third oxide semiconductor layers each have a crystalline structure.

[Assistant]
1. A semiconductor device comprising:
a transistor including a channel formation region, the channel formation region comprising silicon,
a first insulating layer over the transistor,;
a first gate electrode over the first insulating layer;
a second insulating layer over the first gate electrode;
a first oxide semiconductor layer over the second insulating layer, the first oxide semiconductor layer overlapping with the first gate electrode;
a second oxide semiconductor layer over the first oxide semiconductor layer, the second oxide semiconductor layer overlapping with the first gate electrode;
a third oxide semiconductor layer over the second oxide semiconductor layer, the third oxide semiconductor layer overlapping with the first gate electrode;
a source electrode and a drain electrode over the first oxide semiconductor layer and the second oxide semiconductor layer, the source electrode and the drain electrode electrically connected to the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer;
a third insulating layer over the third oxide semiconductor layer, the source electrode, and the drain electrode; and
a second gate electrode over the third insulating layer, the second gate electrode overlapping with the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer,
wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises at least one of indium, zinc, and gallium,
wherein the third oxide semiconductor layer and a side surface of the second oxide semiconductor layer are in contact with each other, and
wherein the third oxide semiconductor layer and a side surface of the first oxide semiconductor layer are in contact with each other.

2. The semiconductor device according to claim 1, wherein the first insulating layer comprises aluminum and oxygen.

3. The semiconductor device according to claim 1, wherein each of the second oxide semiconductor layer and the third oxide semiconductor layer has a crystalline structure.

4. The semiconductor device according to claim 1, wherein the first oxide semiconductor layer has an amorphous structure.

5. The semiconductor device according to claim 1, wherein a composition of the second oxide semiconductor layer and a composition of the third oxide semiconductor layer are different from each other.

6. The semiconductor device according to claim 1, wherein the second insulating layer contains oxygen in excess of a stoichiometric composition.

7. The semiconductor device according to claim 1, wherein a concentration of silicon or carbon in each of the first oxide semiconductor layer and the third oxide semiconductor layer is lower than or equal to 3×10 18 atoms/cm 3.

8. The semiconductor device according to claim 1, wherein each of the source electrode and the drain electrode is in contact with the second insulating layer.

9. The semiconductor device according to claim 1, wherein the source electrode and the drain electrode is positioned over the third oxide semiconductor layer.

10. A semiconductor device comprising:
a transistor including a channel formation region, the channel formation region comprising silicon,
a first insulating layer over the transistor;
a first gate electrode over the first insulating layer;
a second insulating layer over the first gate electrode;
a first oxide semiconductor layer over the second insulating layer, the first oxide semiconductor layer overlapping with the first gate electrode;
a second oxide semiconductor layer over the first oxide semiconductor layer, the second oxide semiconductor layer overlapping with the first gate electrode;
a third oxide semiconductor layer over the second oxide semiconductor layer, the third oxide semiconductor layer overlapping with the first gate electrode;
a source electrode and a drain electrode over the first oxide semiconductor layer and the second oxide semiconductor layer, the source electrode and the drain electrode electrically connected to the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer;
a third insulating layer over the third oxide semiconductor layer, the source electrode, and the drain electrode; and
a second gate electrode over the third insulating layer, the second gate electrode overlapping with the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer,
wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises at least one of indium, zinc, and gallium,
wherein the third oxide semiconductor layer and a side surface of the second oxide semiconductor layer are in contact with each other,
wherein the third oxide semiconductor layer and a side surface of the first oxide semiconductor layer are in contact with each other, and
wherein one of the source electrode and the drain electrode is electrically connected to the transistor.

11. The semiconductor device according to claim 10, wherein the first insulating layer comprises aluminum and oxygen.

12. The semiconductor device according to claim 10, wherein each of the second oxide semiconductor layer and the third oxide semiconductor layer has a crystalline structure.

13. The semiconductor device according to claim 10, wherein the first oxide semiconductor layer has an amorphous structure.

14. The semiconductor device according to claim 10, wherein a composition of the second oxide semiconductor layer and a composition of the third oxide semiconductor layer are different from each other.

15. The semiconductor device according to claim 10, wherein the second insulating layer contains oxygen in excess of a stoichiometric composition.

16. The semiconductor device according to claim 10, wherein a concentration of silicon or carbon in each of the first oxide semiconductor layer and the third oxide semiconductor layer is lower than or equal to 3×10 18 atoms/cm3.

17. The semiconductor device according to claim 10, wherein each of the source electrode and the drain electrode is in contact with the second insulating layer.

18. The semiconductor device according to claim 10, wherein the source electrode and the drain electrode is positioned over the third oxide semiconductor layer.


[System] You are an expert US patent attorney. Draft a set of independent and dependent claims based on the provided invention description. Use correct USPTO formatting.

[User]
Title: Light-Emitting Device And Method For Manufacturing The Same

Technical Field and Background:
Conventionally, a display panel of a so-called active matrix driving system constituted by a thin film transistor (hereinafter also referred to as a “TFT”) over a glass substrate is known. This active matrix display panel is manufactured by patterning various thin films by a light-exposure step using a photomask, similarly to a manufacturing technique of a semiconductor integrated circuit. Until now, there is employed a manufacturing method for cutting out plural display panels from one mother glass substrate and mass-producing efficiently. The size of a mother glass substrate used for manufacturing display panels is increased from 300 mm×400 mm of the first generation in the early 1990s to 680 mm×880 mm or 730 mm×920 mm of the fourth generation in 2000. Furthermore, the manufacturing method has been developed so that a large number of display panels can be obtained from one substrate. When a size of a glass substrate or a display panel is small, a patterning treatment can be carried out comparatively easily by using a photolithography apparatus. However, as a substrate size is increased, an entire surface of a display panel cannot be simultaneously treated by carrying out a light-exposure treatment once. Consequently, a method for exposing an entire surface of a substrate to light has been developed as a light-exposure treatment. (for example, consecutive light-exposure to one substrate for connecting edges of elements such as a wiring not to be disconnected at a boundary between the elements). This method is performed by dividing a region where a photoresist is applied into a plurality of block regions, carrying out a light-exposure treatment on every predetermined block regions, and by sequentially repeating them (for example, Reference 1: Japanese Patent Laid-Open No. Hei 11-326951).

Invention Disclosure:
The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel.

[Assistant]
1. A light-emitting device comprising:
a first substrate;
a first transistor, a second transistor and a third transistor each over the first substrate, each of the first transistor, the second transistor and the third transistor comprising:
a gate electrode comprising a conductive material;
a semiconductor film; and
a gate insulating layer between the gate electrode and the semiconductor film;
a first electrode electrically connected to one of a source and a drain of the second transistor;
an insulating layer which covers an end portion of the first electrode;
a spacer over the insulating layer;
an light emitting layer over the first electrode;
a second electrode over the light emitting layer;
a second substrate over the second electrode; and
a resin material which fills a space between the second electrode and the second substrate,
wherein one of a source and a drain of the first transistor is electrically connected to the gate electrode of the second transistor,
wherein one of a source and a drain of the third transistor is electrically connected to the gate electrode of third transistor,
wherein the other one of source and drain of the third transistor is electrically connected to the other one of the source and the drain of first transistor,
wherein the spacer is between the second substrate and the insulating layer, and
wherein the resin material is in contact with the spacer.

2. The light-emitting device according to claim 1, wherein the semiconductor film is over the gate electrode.

3. The light-emitting device according to claim 1, wherein the gate insulating layer has an island-like shape.

4. The light-emitting device according to claim 1, further comprising a protective film over the first transistor and the second transistor.

5. The light-emitting device according to claim 1, wherein the conductive material comprises Ag, Au, Cu, W or Al as a main component.

6. The light-emitting device according to claim 1, wherein the spacer is in contact with the second substrate.

7. The light-emitting device according to claim 1,
wherein the spacer keeps a gap between the first substrate and the second substrate.

8. The light-emitting device according to claim 1, wherein the spacer is formed by a droplet discharging method.

9. An electronic device comprising the light-emitting device according to claim 1.

10. The electronic device according to claim 9, wherein the electronic device is selected from the group consisting of a television receiver, a personal computer, a portable telephone, an information display board and an advertisement display board.

11. A light-emitting device comprising:
a first substrate;
a first transistor over the first substrate, the first transistor comprising:
a first gate electrode comprising a conductive material;
a first semiconductor film formed from a semiconductor material; and
a first gate insulating layer between the first gate electrode and the first semiconductor film,
a second transistor over the first substrate, the second transistor comprising:
a second gate electrode comprising the conductive material;
a second semiconductor film formed from the semiconductor material; and
a second gate insulating layer between the second gate electrode and the second semiconductor film,
a third transistor over the first substrate, the third transistor comprising:
a third gate electrode comprising the conductive material;
a third semiconductor film formed from the semiconductor material; and
a third gate insulating layer between the third gate electrode and the third semiconductor film,
wherein one of a source and a drain of the first transistor is electrically connected to the second gate electrode of the second transistor;
wherein one of a source and a drain of the third transistor is electrically connected to the gate electrode of third transistor,
wherein the other one of source and drain of the third transistor is electrically connected to the other one of the source and the drain of first transistor,
a first electrode electrically connected to one of a source and a drain of the second transistor;
an insulating layer which covers an end portion of the first electrode;
a spacer over the insulating layer;
an light emitting layer over the first electrode;
a second electrode over the light emitting layer; and
a second substrate over the second electrode,
wherein the spacer is between the second substrate and the insulating layer, and
wherein the spacer is surrounded by a resin material.

12. The light-emitting device according to claim 11,
wherein the first semiconductor film is over the first gate electrode, and
wherein the second semiconductor film is over the second gate electrode.

13. The light-emitting device according to claim 11,
wherein the first gate insulating layer has an island-like shape, and
wherein the second gate insulating layer has an island-like shape.

14. The light-emitting device according to claim 11, further comprising a protective film over the first transistor and the second transistor.

15. The light-emitting device according to claim 11, wherein the conductive material comprises Ag, Au, Cu, W or Al as a main component.

16. The light-emitting device according to claim 11, wherein the spacer is in contact with the second substrate.

17. The light-emitting device according to claim 11,
wherein the spacer keeps a gap between the first substrate and the second substrate.

18. An electronic device comprising the light-emitting device according to claim 11.

19. The electronic device according to claim 18, wherein the electronic device is selected from the group consisting of a television receiver, a personal computer, a portable telephone, an information display board and an advertisement display board.


[System] You are an expert US patent attorney. Draft a set of independent and dependent claims based on the provided invention description. Use correct USPTO formatting.

[User]
Title: Heroin Detection By Raman Spectroscopy From Impure Compositions Comprising An Interfering Fluorescent Contaminant

Technical Field and Background:
Raman spectroscopy is an effective tool for identifying and characterizing a vast array of substances. In Raman spectroscopy, light typically from a laser and of a known wavelength (typically infrared or near infrared) is directed at a specimen. The laser light (also sometimes referred to as the Raman pump) interacts with the electron clouds in the molecules of the specimen and, as a result of this interaction, experiences selected wavelength shifting. The precise nature of this wavelength shifting depends upon the materials present in the specimen. A unique wavelength signature (typically called the Raman signature) is produced by each specimen. This unique Raman signature permits the specimen to be identified and characterized. More specifically, the spectrum of light returning from the specimen is analyzed with a spectrometer so as to identify the Raman-induced wavelength shifting in the Raman pump light, and then this wavelength signature is compared (e.g., by a computer) with a library of known Raman signatures, whereby to identify the precise nature of the specimen. Raman spectroscopy is widely used in scientific, commercial and public safety areas. Recent technological advances have made it possible to significantly reduce the size and cost of Raman spectroscopy systems. This has in turn increased the range of practical applications for Raman spectroscopy. For example, portable units have recently become available for various field uses, such as the on-site identification of potentially hazardous substances. The interception of illegal drugs, such as heroin, has become a severe policing problem worldwide. It is difficult for law enforcement personnel in the field to at least initially identify any particular substance as likely being a prohibited one. This can lead to false arrests or releasing suspects who are indeed carrying such illegal drugs. While a properly equipped lab can make a definitive analysis, typical lab equipment does not lend itself to use by law enforcement personnel in the field because it is either too heavy, cumbersome, difficult to operate, or too expensive to distribute widely to large numbers of law enforcement personnel.

Invention Disclosure:
A method of identifying the presence of heroin in an impure heroin composition which contains heroin and at least one fluorescent contaminant which interferes with a Raman signal from the heroin. The method may include contacting the mixture with a solvent such as an alcohol, then contacting the resulting alcohol composition with a SERS surface. The surface may then be exposed to laser light from a hand-held Raman spectrometer to detect a Raman signal from the heroin. An apparatus for performing the method is also provided.

[Assistant]
1. A Raman spectrometer comprising:
(a) a light source to direct light to a SERS surface;
(b) a spectrograph to acquire a Raman spectrum from the SERS surface; and
(c) a processor which compares a Raman spectrum of the SERS surface without the presence of a composition thereon, the composition including heroin and at least monoacetyl morphine fluorescent contaminant which interferes with a Raman signal from the heroin, the processor comparing the Raman spectrum with one or more criteria in a memory and identifies the SERS surface as one which is or is not suitable for testing for the presence of heroin, and which also compares the Raman spectrum of the SERS surface with the composition thereon to be tested for heroin with one or more criteria in a memory to test for the presence of heroin.

2. A Raman spectrometer according to claim 1 wherein the processor additionally provides an indication to a user that the SERS surface is or is not suitable for testing for the presence of heroin.

3. A Raman spectrometer according to claim 1 wherein the composition contains between 5 to 95 weight % of the fluorescent contaminant.

4. A Raman spectrometer according to claim 1 wherein the SERS surface comprises gold, silver or copper.

5. A Raman spectrometer according to claim 4 wherein the SERS surface is textured.

6. A Raman spectrometer according to claim 5 wherein the SERS surface is an exposed surface of a silver layer which overlays a silicon substrate.

7. A Raman spectrometer according to claim 6 wherein the silicon substrate is textured.

8. A Raman spectrometer according to claim 1 wherein the spectrometer can acquire a Raman spectrum in a range of between 500 cm −1 and 2000 cm −1.

9. A Raman spectrometer according to claim 8 wherein the spectrometer can acquire a Raman spectrum in a range of between 600 cm −1 and 650 cm −1.

10. A method of verifying a SERS surface as suitable for use in enhancing the identification of heroin in a test of a composition including the heroin and at least monoacetyl morphine fluorescent contaminant which interferes with a Raman signal from the heroin on a Raman spectrometer, the method comprising:
(d) subjecting the SERS surface to a measurement on the Raman spectrometer without the presence of the composition on the SERS surface, and collecting a result of the test;
(e) comparing, in a processor, the collected result with one or more predetermined criteria stored in a memory; and
(f) if the collected result meets the one or more predetermined criteria, then subjecting the SERS surface to the test on the Raman spectrometer after exposure of the SERS surface to the composition.

11. A method according to claim 10 wherein the composition contains between 5 to 95 weight % of the fluorescent contaminant.

12. A method according to claim 10 wherein the SERS surface comprises gold, silver or copper.

13. A method according to claim 12 wherein the SERS surface is textured.

14. A method according to claim 13 wherein the SERS surface is an exposed surface of a silver layer which overlays a silicon substrate.

15. A method according to claim 14 wherein the silicon substrate is textured.

16. A method according to claim 10 wherein the Raman signal from the heroin is detected using a wavelength in a range of between 500 cm −1 and 2000 cm −1.

17. A method according to claim 16 wherein the resulting Raman signal from the heroin is detected using a wavelength in a range of between 600 cm −1 and 650 cm −1.

18. A Raman spectrometer comprising:
a light source to direct light to a surface;
a spectrograph to acquire a Raman spectrum from the surface;
a processor which compares a Raman spectrum of the surface without the presence of a component thereon, with one or more criteria in a memory and identifies the surface as one which is or is not suitable for testing for the presence of the component, and which also compares the Raman spectrum of the surface with a composition thereon to be tested for the component with one or more criteria in a memory to test for the presence of the component.

19. A Raman spectrometer according to claim 18 wherein the processor identifies the surface as one which is authorized to be used with the spectrometer.

20. A Raman spectrometer according to claim 18 wherein the processor additionally provides an indication to a user that the surface is or is not suitable for testing the presence of the component.

21. A Raman spectrometer according to claim 18 wherein the spectrometer can acquire a Raman spectrum between 500-2000 cm′.

22. A Raman spectrometer according to claim 18 wherein the surface is a SERS surface.

23. A method of verifying a surface as suitable for use in enhancing the identification of a component in a test of a composition for the component on an analytical instrument, comprising:
subjecting the surface to a measurement on the analytical instrument without the presence of the component on the surface, and collecting a result of the test;
comparing, in a processor, the collected result with one or more predetermined criteria stored in a memory; and
if the collected result meets the one or more predetermined criteria, then subjecting the surface to the test on the analytical instrument after exposure to the composition.

24. A method according to claim 23 wherein the surface is verified for use as a SERS surface in a test for identifying the presence of heroin, and the analytical instrument is a Raman spectrometer.

25. A computer program product carrying a computer program which, when loaded into a programmable processor, executes the method of:
controlling a Raman spectrometer to illuminate a surface without the presence of a component to be tested thereon;
receiving the Raman spectrum from the surface;
comparing the Raman spectrum of the surface without the presence of the component thereon, with one or more criteria in a memory and identifying the surface as one which is or is not suitable for testing the presence of the component;
controlling the Raman spectrometer to illuminate the surface with a composition thereon to be tested for the presence of the component; and
comparing the Raman spectrum of the surface with the composition thereon with one or more criteria in a memory to test for the presence of the component.

26. The computer program product according to claim 25 wherein identifying the surface as one which is or is not suitable for testing the presence of the component includes identifying the surface as one which is authorized to be used with the spectrometer.

27. The computer program product according to claim 25 further including providing an indication to a user that the surface is one which is or is not suitable for testing the presence of the component.


[System] You are an expert US patent attorney. Draft a set of independent and dependent claims based on the provided invention description. Use correct USPTO formatting.

[User]
Title: Communication Method Using A Carrier Aggregation And Apparatus Therefore

Technical Field and Background:
1. Field of the Invention The present invention relates to a wireless (or radio) communication system. And, more particularly, the present invention relates to a communication method using a carrier aggregation and apparatus therefore. 2. Discussion of the Related Art Wireless communication systems are being broadly developed in order to provide various types of communication services, such as voice or data services. Generally, a wireless communication system corresponds to a multiple access system that may support communication with multiple users by sharing available system resources (bandwidth, transmission power, etc.). Examples of a multiple access system include a CDMA (code division multiple access) system, an FDMA (frequency division multiple access) system, a TDMA (time division multiple access) system, an OFDMA (orthogonal frequency division multiple access) system, an SC-FDMA (single carrier frequency division multiple access) system, an MC-FDMA (multi carrier frequency division multiple access) system, and so on.

Invention Disclosure:
A method of controlling an uplink transmission in a wireless communications system, and a user equipment therefore are discussed. The method according to one embodiment includes configuring the user equipment with multiple component carriers; receiving first configuration information for allocating one or more component carrier sets; receiving second configuration information for periodically transmitting an uplink signal; receiving control information for configuring states of component carriers, by which a downlink component carrier and an uplink component carrier are controlled to be in a same state; and performing a procedure for periodically transmitting the uplink signal on an uplink component carrier in use of the first configuration information, the second configuration information and the control information. When the uplink component carrier is in the active state, a transmission of the uplink signal is performed. When the uplink component carrier is in the non-active state, the transmission of the uplink signal is skipped.

[Assistant]
1. A method of controlling an uplink transmission at a user equipment in a wireless communications system, the user equipment being configured with multiple component carriers, the method comprising:
receiving first configuration information for allocating one or more component carrier sets, wherein each of the one or more component carrier sets includes one or more downlink component carriers and an uplink component carrier paired with the one or more downlink component carriers;
receiving second configuration information for periodically transmitting an uplink signal; and
performing a procedure for periodically transmitting the uplink signal on an uplink component carrier in use of the first configuration information and the second configuration,
wherein when the uplink component carrier is in an active state at a time for transmitting the uplink signal, a transmission of the uplink signal is performed on the uplink component carrier at the time for transmitting the uplink signal,
wherein when the uplink component carrier is in a non-active state at a time for transmitting the uplink signal, the transmission of the uplink signal is skipped on the uplink component carrier at the time for transmitting the uplink signal, and
wherein the uplink component carrier is in the non-active state, when all downlink component carriers paired with the uplink component carrier are in the non-active state.

2. The method of claim 1, wherein the first and second configuration information are radio resource control (RRC) signals.

3. The method of claim 1, wherein the uplink signal includes at least one of a channel quality indicator (CQI), a precoding matrix indication (PMI), a rank information (RI), and a sounding reference signal (SRS).

4. A user equipment configured to communicate with a base station using multiple component carriers in a wireless communications system, the user equipment comprising:
a radio frequency (RF) unit; and
a processor, wherein the processor is configured to:
receive first configuration information for allocating one or more component carrier sets, wherein each of the one or more component carrier sets includes one or more downlink component carriers and an uplink component carrier paired with the one or more downlink component carriers,
receive second configuration information for periodically transmitting an uplink signal, and
perform a procedure for periodically transmitting the uplink signal on an uplink component carrier in use of the first configuration information and the second configuration information,
wherein when the uplink component carrier is in an active state at a time for transmitting the uplink signal, a transmission of the uplink signal is performed on the uplink component carrier at the time for transmitting the uplink signal,
wherein when the uplink component carrier is in a non-active state at a time for transmitting the uplink signal, the transmission of the uplink signal is skipped on the uplink component carrier at the time for transmitting the uplink signal, and
wherein the uplink component carrier is in the non-active state, when all downlink component carriers paired with the uplink component carrier are in the non-active state.

5. The user equipment of claim 4, wherein the first and second configuration information are radio resource control (RRC) signals.

6. The user equipment of claim 4, wherein the uplink signal includes at least one of a channel quality indicator (CQI), a precoding matrix indication (PMI), a rank information (RI), and a sounding reference signal (SRS).


[System] You are an expert US patent attorney. Draft a set of independent and dependent claims based on the provided invention description. Use correct USPTO formatting.

[User]
Title: Sway Brace Attachment

Technical Field and Background:
1. Field of the Invention The present invention relates to devices for bracing pipes and other loads, suspended below floors and ceilings, against sway and seismic disturbances, and, in particular, to a sway brace attachment for firmly gripping a building support, such as a beam, and other flanged structures. 2. Description of the Related Art There is a multitude of products in the market utilized by building and plumbing contractors for bracing and supporting pipes, ducts, sprinkler systems, fans, air-conditioners and other loads below floors and ceilings. These products include clamps, braces, hooks, straps, plates, brackets, among other items. Typically, one end of a brace is attached to the load while the other end is attached to a beam, or other support structure, on a floor or a ceiling. Due to the variety of possible beam types, sizes and orientations, as well as the variety of loads that need to be braced, the mechanism that attaches the brace to the beam should have a high load capacity and be capable of mounting on various types, sizes and locations of a flange. Although such attachment mechanisms exist, including sway brace attachments sold by Tolco, a brand of Nibco, Inc., the assignee of the present application, a demand exists for sway brace attachments having equivalent or improved performance relative to existing attachments. Thus, there is a need for a sway brace attachment which can not only withstand substantial loads, but is also simply and expeditiously installable and adjustable, and is preferably economical to manufacture, thereby being desirably inexpensive in cost and in use.

Invention Disclosure:
A sway brace attachment for firmly connecting to a beam and other flanged structures, and a method for manufacturing the sway brace attachment. The sway brace attachment includes a main body and an insert that is captured within the main body by a pair of set screws which also engage the flange. Preferably, a third set screw is supported by the main body and engages the opposite side of the flange from the pair of set screws. The main body can be generally rectangular in shape, with a top wall, a pair of side walls extending from the top wall and a pair of bottom walls, which extend inwardly from respective side walls in an overlapping relationship. The sway brace attachment can be used for bracing pipes and other loads, suspended below ceilings and floors, against sway and seismic disturbances.

[Assistant]
1. A sway brace attachment for clamping to a flange of a beam or other support structure, comprising:
a body having a pair of spaced first and second side walls, with each of the first and second side walls having an elongate slot, wherein each of the slots has a closed end and an open end opening to one edge of a respective one of the first and second side walls, wherein each of the slots has a first portion and a second portion, the first portions of the first and second slots configured to receive the flange;
an insert having a first end portion received in the second portion of the slot of the first side wall, and an opposite second end portion received in the second portion of the slot of the second side wall, the insert having at least one threaded hole sized and shaped to receive a threaded fastener.

2. The sway brace attachment of claim 1, further comprising at least one threaded fastener threaded in the at least one threaded hole, the at least one fastener configured to facilitate securement of the sway brace attachment to the flange when the flange is received in the first portions of the first and second slots.

3. The sway brace attachment of claim 2, wherein the at least one threaded fastener comprises at least one set screw extending through the at least one threaded hole of the insert to engage a first surface of the flange when the flange is received in the first portions of the first and second slots.

4. The sway brace attachment of claim 2, wherein the body has a top wall extending between the first and second side walls, the top wall has at least one top hole, wherein each of the at least one top hole is vertically aligned with one of the at least one threaded hole of the insert.

5. The sway brace attachment of claim 4, wherein the body has a bottom wall extending between the first and second walls and generally opposing the top wall.

6. The sway brace attachment of claim 5, wherein the bottom wall has a bottom threaded hole sized and shaped to receive a threaded fastener.

7. The sway brace attachment of claim 6, further comprising at least one threaded fastener threaded in the bottom threaded hole, the at least one fastener configured to facilitate securement of the sway brace attachment to the flange when the flange is received in the first portions of the first and second slots.

8. The sway brace attachment of claim 5, wherein the bottom wall includes first and second overlapping walls, wherein the first overlapping wall is connected to and extends from the first side wall and the second overlapping wall is connected to and extends from the second side wall.

9. The sway brace attachment of claim 8, wherein first and second overlapping walls have aligned bottom holes sized and shaped to receive a fastener.

10. The sway brace attachment of claim 9, wherein the bottom hole of the overlapping wall is threaded and configured to threadably receive a fastener.

11. The sway brace attachment of claim 1, wherein the first and second side walls each define a shoulder configured to support the insert in the second portions of the first and second slots.

12. The sway brace attachment of claim 11, wherein a portion of the closed end of each of the slots defined by the first portion is offset from a portion of the closed end defined by the second portion to define the shoulder of each of the first and second side walls.