Daily Papers

Spintronics is expected as the next-generation technology based on the novel notch of spin degree of freedom of electrons. Half metals, a class of materials which behave as a metal in one spin direction and an insulator in the opposite spin direction, are ideal for spintronic applications. Half metallic antiferromagnets as a subclass of half metals are characterized further by totally compensated spin moments in a unit cell, and have the advantage of being able to generate fully spin-polarized current while exhibiting zero macroscopic magnetization. Considerable efforts have been devoted to the search for this novel material, from which we may get useful hints for prospective material exploration.

Neuromorphic spintronics combines two advanced fields in technology, neuromorphic computing and spintronics, to create brain-inspired, efficient computing systems that leverage the unique properties of the electron's spin. In this book chapter, we first introduce both fields - neuromorphic computing and spintronics and then make a case for neuromorphic spintronics. We discuss concrete examples of neuromorphic spintronics, including computing based on fluctuations, artificial neural networks, and reservoir computing, highlighting their potential to revolutionize computational efficiency and functionality.

Dirac and Weyl materials refer to a class of solid materials which host low-energy quasiparticle excitations that can be described by the Dirac and Weyl equations in relativistic quantum mechanics. Starting with the advent of graphene as the first prominent example, these materials have been attracting tremendous interest owing to their novel fundamental properties as well as the great potential for applications. Here we introduce the basic concepts and notions related to Dirac and Weyl materials and briefly review some recent works in this field, particularly on the conceptual development and the possible spintronics/pseudospintronics applications.

The development of selective high precision chemical functionalization strategies for device fabrication, in conjunction with associated techniques for patterning graphene wafers with atomic accuracy would provide the necessary basis for a post-CMOS manufacturing technology. This requires a thorough understanding of the principles governing the reactivity and patterning of graphene at the sub-nanometer length scale. This article reviews our quest to delineate the principles of graphene chemistry - that is, the chemistry at the Dirac point and beyond, and the effect of covalent chemistry on the electronic structure, electrical transport and magnetic properties of this low-dimensional material in order to enable the scalable production of graphene-based devices for low- and high-end technology applications.

Spintronics aims to utilize the spin degree of freedom for information storage and computing applications. One major issue is the generation and detection of spins via spin and charge conversion. Quantum materials have recently exhibited many unique spin-dependent properties, which can be used as promising material candidates for efficient spin and charge conversion. Here, we review recent findings concerning spin and charge conversion in quantum materials, including Rashba interfaces, topological insulators, two-dimensional materials, superconductors, and non-collinear antiferromagnets. Important progress in using quantum materials for spin and charge conversion could pave the way for developing future spintronics devices.

Topological magnons give rise to possibilities for engineering novel spintronics devices with critical applications in quantum information and computation, due to its symmetry-protected robustness and low dissipation. However, to make reliable and systematic predictions about material realization of topological magnons has been a major challenge, due to the lack of neutron scattering data for most materials. In this work, we significantly advance the symmetry-based approach for identifying topological magnons through developing a fully automated algorithm, utilizing the theory of symmetry indicators, that enables a highly efficient and large-scale search for candidate materials hosting field-induced topological magnons. This progress not only streamlines the discovery process but also expands the scope of materials exploration beyond previous manual or traditional methods, offering a powerful tool for uncovering novel topological phases in magnetic systems. Performing a large-scale search over all 1649 magnetic materials in Bilbao Crystallographic Server with a commensurate magnetic order, we discover 387 candidate materials for topological magnons, significantly expanding the pool of topological magnon materials. We further discuss examples and experimental accessibility of the candidate materials, shedding light on future experimental realizations of topological magnons in magnetic materials.

In chemistry and biochemistry, chirality represents the structural asymmetry characterized by non-superimposable mirror images for a material like DNA. In physics, however, chirality commonly refers to the spin-momentum locking of a particle or quasiparticle in the momentum space. While seemingly disconnected, structural chirality in molecules and crystals can drive electronic chirality through orbital-momentum locking, i.e. chirality can be transferred from the atomic geometry to electronic orbitals. Electronic chirality provides an insightful understanding of the chirality-induced spin selectivity (CISS), in which electrons exhibit salient spin polarization after going through a chiral material, and electric magnetochiral anisotropy (EMCA), which is characterized by the diode-like transport. It further gives rise to new phenomena, such as anomalous circularly polarized light emission (ACPLE), in which the light handedness relies on the emission direction. These chirality-driven effects will generate broad impacts in fundamental science and technology applications in spintronics, optoelectronics, and biochemistry.

Advances in scaling down heterostructures and having an improved interface quality together with atomically-thin two-dimensional materials suggest a novel approach to systematically design materials. A given material can be transformed through proximity effects whereby it acquires properties of its neighbors, for example, becoming superconducting, magnetic, topologically nontrivial, or with an enhanced spin-orbit coupling. Such proximity effects not only complement the conventional methods of designing materials by doping or functionalization, but can also overcome their various limitations. In proximitized materials it is possible to realize properties that are not present in any constituent region of the considered heterostructure. While the focus is on magnetic and spin-orbit proximity effects with their applications in spintronics, the outlined principles provide also a broader framework for employing other proximity effects to tailor materials and realize novel phenomena.

It was previously believed that the Bloch electronic states of non-magnetic materials with inversion symmetry cannot have finite spin polarizations. However, since the seminal work by Zhang et al. [Nat. Phys. 10, 387-393 (2014)] on local spin polarizations of Bloch states in non-magnetic, centrosymmetric materials, the scope of spintronics has been significantly broadened. Here, we show, using a framework that is universally applicable independent of whether hidden spin polarizations are small (e.g., diamond, Si, Ge, and GaAs) or large (e.g., MoS2 and WSe2), that the corresponding quantity arising from orbital - instead of spin - degrees of freedom, the hidden orbital polarization, is (i) much more abundant in nature since it exists even without spin-orbit coupling and (ii) more fundamental since the interband matrix elements of the site-dependent orbital angular momentum operator determines the hidden spin polarization. We predict that the hidden spin polarization of transition metal dichalcogenides is reduced significantly upon compression. We suggest experimental signatures of hidden orbital polarization from photoemission spectroscopies and demonstrate that the current-induced hidden orbital polarization may play a far more important role than its spin counterpart in antiferromagnetic information technology by calculating the current-driven antiferromagnetism in compressed silicon.

The emergence of two-dimensional (2D) materials has attracted a great deal of attention due to their fascinating physical properties and potential applications for future nanoelectronic devices. Since the first isolation of graphene, a Dirac material, a large family of new functional 2D materials have been discovered and characterized, including insulating 2D boron nitride, semiconducting 2D transition metal dichalcogenides and black phosphorus, and superconducting 2D bismuth strontium calcium copper oxide, molybdenum disulphide and niobium selenide, etc. Here, we report the identification of ferromagnetic thin flakes of Cr2Ge2Te6 (CGT) with thickness down to a few nanometers, which provides a very important piece to the van der Waals structures consisting of various 2D materials. We further demonstrate the giant modulation of the channel resistance of 2D CGT devices via electric field effect. Our results illustrate the gate voltage tunability of 2D CGT and the potential of CGT, a ferromagnetic 2D material, as a new functional quantum material for applications in future nanoelectronics and spintronics.