Supporting Information
Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering
Ananth Saran Yalamarthy¹, Hongyun So²*, Miguel Muñoz Rojo³, Ateeq J. Suria¹, Xiaoqing Xu⁴, Eric Pop³,⁵,⁶, and Debbie G. Senesky³,⁶,⁷*
¹Department of Mechanical Engineering, Stanford University, Stanford, CA 94305, USA.
²Department of Mechanical Engineering, Hanyang University, Seoul 04763, South Korea.
³Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA.
⁴Stanford Nanofabrication Facility, Stanford University, Stanford, CA 94305, USA.
⁵Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA.
⁶Precourt Institute for Energy, Stanford University, Stanford, CA 94305, USA.
⁷Department of Aeronautics and Astronautics, Stanford University, Stanford, CA 94305, USA.
*E-mail: Hongyun So (hyso@hanyang.ac.kr), Debbie G. Senesky (dsenesky@stanford.edu)
Table of Contents:
Supplementary Note 1: Fabrication Process
Supplementary Note 2: Test Setup and Calibration
Supplementary Note 3: Finite-Element Model, Measurement Process and Error Correction
Supplementary Note 4: Schrödinger-Poisson Model Notes and Validation
Supplementary Note 5: Circular Transfer Length Method (CTLM)