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Fig.1. t sample holder. $\mathrm{SiO}_2$ particles are pressed into a tungsten grid and positioned in the infrared beam. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig1 | atomic-layer-deposition/experimental-usecase/12/fig1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig1.jp... | train/atomic-layer-deposition/experimental-usecase/12/images/fig1.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig1.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig1 | 1,048 | 845 | JPEG | d16b0dc9ad6f1a43765331ca4d638aacd55d23800f48901d284e6565e8b1f9d8 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 10. Tungsten film thickness deposited at $425 \mathrm{K}$ versus number of AB cycles. The $\mathrm{WF}_6$ and $\mathrm{Si}_2\mathrm{H}_6$ reactant exposures of nine pulses and 40 pulses, respectively, were sufficient for complete half-reactions. The least squares linear fit to the data yields a tungsten grow... | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_10 | atomic-layer-deposition/experimental-usecase/12/fig_10 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The line chart shows a linear relationship between the number of AB cycles and the thickness of a tungsten film deposited at 425 K, confirming self-limiting Atomic Layer Deposition (ALD) behavior. A least squares fit gives a tungsten growth rate of 2.5 Å/cycle using reactant e... | [
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"panel_id": "a",
"data": "| AB Cycles | Tungsten Film Thickness (Å) |\n|---|---|\n| 0 | 0 |\n| 10 | 25 |\n| 20 | 50 |\n| 30 | 75 |\n| 40 | 100 |\n| 50 | 125 |\n| 60 | 150 |\n| 70 | 175 |\n| 80 | 200 |"
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"question": "Does the thickness of the tungsten film increase by exactly 2.5 Å each time one complete AB cycle is performed?",
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"answer": "Yes. The linear chart shows a consistent, repeatable increase of 2.5 Å per... | [
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S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_10 | 594 | 581 | JPEG | 0f04ce1c4e14012a05992cff50250d19cf171ed2c666e9739fb0ab6dbf10123c | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 11. Tungsten film thickness deposited after three AB cycles versus substrate temperature. The $\mathrm{WF}_6$ and $\mathrm{Si}_2\mathrm{H}_6$ reactant exposures at each temperature were sufficient for complete half-reactions. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_11 | atomic-layer-deposition/experimental-usecase/12/fig_11 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
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"panel_id": "a",
"summary": "The line graph represents the tungsten film thickness deposited after 3 AB cycles against substrate temperature (300–600 K). The curve shows a distinct peak: thickness initially rises with temperature, reaches a maximum near 425 K, and then saturates at higher temperatures. WF... | [
{
"panel_id": "a",
"data": "| Temperature (K) | Tungsten Film Thickness (Å) |\n|---|---|\n| 300 | 3.4 |\n| 400 | 6.7 |\n| 500 | 7.5 |\n| 600 | 7.8 |"
}
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"panel_id": "a",
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"question": "Does the constant tungsten deposition rate observed above 425 K imply that the growth mechanism shifts from ALD to CVD?",
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"answer": "No. FTIR confirms the reactions remain self-limiting, surface-sat... | [
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_11.... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_11.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_11.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_11 | 600 | 609 | JPEG | dab9ccea58557a79f71245107afc6b8b75501b68734c468d3819ed59e543cdec | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 12. Atomic force microscope image of a $\sim 320\mathrm{A}$ thick tungsten film deposited at $425\mathrm{K}$ after 125 AB cycles. The $\mathrm{WF}_6$ and $\mathrm{Si}_2\mathrm{H}_6$ reactant exposures were sufficient for complete half-reactions. The light-to-dark range is $25\mathrm{\AA}$ | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_12 | atomic-layer-deposition/experimental-usecase/12/fig_12 | train | materials_science | atomic_layer_deposition | null | experimental | [
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S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_12 | 650 | 342 | JPEG | d4b9b612c83f0a5c0e7cad08214bd57cb131e40fa8a7541d0b43835c125187dd | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 2. FTIR difference spectra recorded after the reaction of $\mathrm{Si}_2\mathrm{H}_6$ with hydroxylated $\mathrm{SiO}_2$ particles at $650~\mathrm{K}$ . The negative absorbance features are consistent with removal of the $\mathrm{SiOH^{*}}$ species. The positive absorbance features correspond to the deposit... | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_2 | atomic-layer-deposition/experimental-usecase/12/fig_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
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"panel_id": "a",
"summary": "The Fourier-Transform Infrared Spectroscopy(FTIR) spectra chart spectrum shows how disilane (Si₂H₆)acts with hydroxylated silica at 650 K. The negative peak near 3750 cm⁻¹ indicates that surface Si–OH groups are being consumed. The positive peaks—around 2250 cm⁻¹ (Si–H stretc... | [
{
"panel_id": "a",
"data": "| Frequency (cm⁻¹) | Infrared Absorbance | Remark |\n|----------------|----------------------|---------|\n| 3750 | -0.15 | SiO-H Stretch |\n| 3000 | 0.004 | -|\n| 2250 | 0.06 | - |\n| 2000 | 0.35... | [
{
"panel_id": "a",
"question_type": "Process-Oriented",
"question": "List the sequence of chemical events occurring on the silica surface during the 30-minute exposure as revealed by the difference spectrum.",
"answer_type": "Paragraph",
"answer": "Introduction of Si₂H₆ into the reactor.\nReacti... | [
{
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"x": 1,
"y": 3,
"width": 633,
"height": 646
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] | {
"publication_title": "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_2.j... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_2.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_2.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_2 | 638 | 653 | JPEG | 93f15ec8184782a2334b69373b33322bd9d7bdee9fb3822adcfe97a25b95114d | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 3. (A) Experimental schematic of vacuum apparatus for in situ spectroscopic ellipsometry studies on Si(100) samples. (B) Spectroscopic ellipsometry is conducted in the central deposition chamber using a rotating analyzer detector. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_3 | atomic-layer-deposition/experimental-usecase/12/fig_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_3.j... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_3.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_3.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_3 | 1,000 | 1,006 | JPEG | 9b39037c9fff489f69ce8b948a3a24da4994a1887d5eeb6f3011dee0de534e8a | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 4. FTIR difference spectra recorded versus $\mathrm{WF}_6$ exposure during the $\mathrm{WF}_6$ half-reaction at $425\mathrm{K}$ . Each spectrum is referenced to the initial surface that had received a saturation $\mathrm{Si}_2\mathrm{H}_6$ exposure. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_4 | atomic-layer-deposition/experimental-usecase/12/fig_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"label": "stacked spectra chart"
},
{
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"label": "stacked spectra chart"
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{
"panel_id": "a",
"summary": "The figure shows FTIR difference spectra for the tungsten hexafluoride (WF₆) half-reaction at 425 K, referenced to a surface initially saturated with disilane (Si₂H₆). In this label, negative absorbance features in the Si–H stretch region (approximately 2000–2500 cm⁻¹) indicat... | [
{
"panel_id": "a",
"data": "|Frequency (cm⁻¹) | Infrared Absorbance | Pressure |\n|----------------|-----------------------|---------|\n| 2500 | ~0.04 | 10 mTorr, 1 min |\n| 2500 | ~0.009 | 50 mTorr, 1 min |\n| 2500 | ~-0.03 | 250 mT... | [
{
"panel_id": "a",
"question_type": "Process-Oriented",
"question": "Based on the spectral changes in the left and right panels, list the chemical exchange occurring during this half-reaction step.",
"answer_type": "Paragraph",
"answer": "Exposure of the Si2H6-terminated surface to WF₆ gas.\n\nC... | [
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/12/images/fig_4.j... | train/atomic-layer-deposition/experimental-usecase/12/images/fig_4.jpg | train/atomic-layer-deposition/experimental-usecase/12/images/fig_4.json | train/atomic-layer-deposition/experimental-usecase/12/content.json | Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction | J.W. Klaus,
S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_4 | 522 | 697 | JPEG | 7e5d82391087363560bb35baf95ff24d4a5a939ae07f20c13d134ee6259d15fd | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 5. Normalized integrated absorbances of the W-F stretching vibration at $\sim 680~\mathrm{cm^{-1}}$ and the $\mathrm{Si - H}$ stretching vibrations at 2115 and $2275~\mathrm{cm^{-1}}$ versus $\mathrm{WF}_6$ exposure during the $\mathrm{WF}_6$ half-reaction at $425\mathrm{K}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_5 | atomic-layer-deposition/experimental-usecase/12/fig_5 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
"label": "multiple scatter plot"
}
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{
"panel_id": "a",
"summary": "This mulitple line plot represents the normalized, integrated absorbance of key IR vibrations (W–F stretch and Si–H stretches) against the total WF₆ exposure (Pressure * Time) during the WF₆ half-reaction at 425 K. It shows the Si–H signal decaying and the W–F signal growing a... | [
{
"panel_id": "a",
"data": "| WF<sub>6</sub> Exposure (Torr·min) | Normalized Integrated Absorbance | Stretch |\n|-----------------------------------|----------------------------------|---------------|\n| 0.0 | 0.0 | W–F Stretch |\n| 0.0 | 0.0 | Si–H Stretch |\n| 0.1 | 0.9 | W–F Stretch |\n| 0.1 | ... | [
{
"panel_id": "a",
"question_type": "Process-Oriented",
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"answer_type": "Paragraph",
"answer": "Normalized integrated absorbance is a measure of the total area under an FTIR absorption ... | [
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] | {
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S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_5 | 600 | 581 | JPEG | 841faa92a4f9945fa27694499581b9817dd445b12852d5cc27def86e0f38d093 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 6. FTIR difference spectra recorded versus $\mathrm{Si}_2\mathrm{H}_6$ exposure during the $\mathrm{Si}_2\mathrm{H}_6$ half-reaction at $425~\mathrm{K}$ . Each spectrum is referenced to the initial surface that had received a saturation $\mathrm{WF}_6$ exposure. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_6 | atomic-layer-deposition/experimental-usecase/12/fig_6 | train | materials_science | atomic_layer_deposition | null | experimental | [
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},
{
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"label": "stacked spectra chart"
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{
"panel_id": "a",
"summary": "The figure shows FTIR difference spectra for the disilane (Si₂H₆) half-reaction at 425 K, referenced to a WF₆-saturated surface. In this label, positive IR absorbance in the Si–H stretch region (approximately 2100–2250 cm⁻¹) confirms the deposition of silicon hydride species. ... | [
{
"panel_id": "a",
"data": "| Frequency (cm⁻¹) | Infrared Absorbance | Pressure |\n|----------------|----------------------|-------|\n| 2500 | 0.03 | 10 mTorr, 1 min |\n| 2500 | -0.01 | 40 mTorr, 1 min |\n| 2500 | -0.07 | 100 mTorr, 2 min |\n| 2250 ... | [
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"answer_t... | [
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S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_6 | 466 | 636 | JPEG | 89cb3777d4bada0ba685d9b4835906500b4e23c8e6550ba22dd7c87658ae0489 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 7. Normalized integrated absorbances of the W-F stretching vibration at $\sim 680 \mathrm{cm}^{-1}$ and the $\mathrm{Si - H}$ stretching vibrations at 2115 and $2275 \mathrm{cm}^{-1}$ versus $\mathrm{Si}_2\mathrm{H}_6$ exposure during the $\mathrm{Si}_2\mathrm{H}_6$ half-reaction at $425 \mathrm{K}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_7 | atomic-layer-deposition/experimental-usecase/12/fig_7 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"panel_id": "a",
"summary": "This mulitple line plot represents the normalized, integrated absorbance of key IR vibrations (W–F stretch and Si–H stretches) against the total Si₂H₆ exposure during the WF₆ half-reaction at 425 K. It shows the W–F signal decaying and the Si–H signal growing as exposure incre... | [
{
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"data": "| Si₂H₆ Exposure (Torr min) | Normalized Integrated Absorbance | Stretch |\n|---|---|-----|\n| 0.0 | 0.0 | W-F Stretch |\n| 0.0 | 0.0 | Si-H Stretch |\n| 0.1 | 0.04 | W-F Stretch |\n| 0.1 | 0.8 | Si-H Stretch |\n| 0.2 | 0.007 | W-F Stretch |\n| 0.2 | 0.9 | Si-H Stretch |\n| 0.3 |... | [
{
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"question": "What control mechanism does the plateau at exposures >0.3 Torr·min demonstrate?",
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"answer": "The plateau indicates a self-limiting control mechanism, a hallmark of ALD. Once the reactive Si-H surface s... | [
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"publication_title": "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction",
"authors": "J.W. Klaus, \nS.J. Ferro, \nS.M. George*",
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S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_7 | 600 | 586 | JPEG | 7491f6e170ee23f7f950aefdf68964bd25d9ebbe7afc51529c5eb8f323bf8e50 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 8. Tungsten film thickness deposited after three AB cycles versus number of $\mathrm{WF}_6$ pulses at $425 \mathrm{K}$ . The $\mathrm{Si}_2\mathrm{H}_6$ exposure of $40 \mathrm{Si}_2\mathrm{H}_6$ pulses during each AB cycle was sufficient for a complete $\mathrm{Si}_2\mathrm{H}_6$ half-reaction. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_8 | atomic-layer-deposition/experimental-usecase/12/fig_8 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"panel_id": "a",
"summary": "The line plot shows the tungsten film thickness obtained after three AB cycles as a function of the number of WF₆ pulses at 425 K. The thickness reaches saturation after about 10 WF₆ pulses, indicating that additional pulses do not increase growth. The data also confirms that ... | [
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"panel_id": "a",
"data": "| Number of WF6 Pulses | Tungsten Film Thickness (Å) |\n|---|---|\n| 0 | 0 |\n| 1 | 3 |\n| 5 | 7 |\n| 10 | 7.2 |\n| 15 | 7.2 |\n| 20 | 7.2 |\n| 25 | 6.5 |\n| 30 | 7.2 |\n| 40 | 7.2 |\n| 50 | 7.2 |"
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S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_8 | 600 | 609 | JPEG | 4416339a5a164def601a15143b0bd86e76c005bf72af69681c9c27e054aec64b | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 9. Tungsten film thickness deposited after three AB cycles versus number of $\mathrm{Si}_2\mathrm{H}_6$ pulses at $425 \mathrm{K}$ . The $\mathrm{WF}_6$ exposure of nine $\mathrm{WF}_6$ pulses during each AB cycle was sufficient for a complete $\mathrm{WF}_6$ half-reaction. | sci_imageminer__atomic_layer_deposition__experimental_usecase__12__fig_9 | atomic-layer-deposition/experimental-usecase/12/fig_9 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"panel_id": "a",
"summary": "This line chart represents the tungsten(W) film thickness after 3 ALD- AB cycles as a function of the number of Si₂H₆ pulses per cycle (B-step), while the WF₆ exposure (A-step) is held constant at 9 pulses per cycle. It demonstrates that film growth requires a minimum number ... | [
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"data": "| Number of Si₂H₆ Pulses | Tungsten Film Thickness (Å) |\n|---|---|\n| 0 | 0 |\n| 4 | 5 |\n| 12 | 7.5 |\n| 24 | 8.1 |\n| 48 | 7.4 |\n| 60 | 8.1 |"
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"answer": "WF₆ Pulse\n\nPurge\n\n... | [
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S.J. Ferro,
S.M. George* | null | null | 1,999 | J.W. Klaus et al.pdf | fig_9 | 600 | 603 | JPEG | 8cbaa089799ee74d9375dffd2f4cc61dfa62031c8a346286999a72282fce7752 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FIG. 1. Dependence of the Si content in the $\mathrm{Ti - Si - N}$ films and deposition thickness per cycle on the $\mathrm{SiH_4}$ partial pressure for the films grown on $\mathrm{SiO_2}$ at the substrate temperature of $180^{\circ}\mathrm{C}$ . $\mathrm{Ti - Si - N}$ films were grown by sequential supply of ... | sci_imageminer__atomic_layer_deposition__experimental_usecase__13__fig_1 | atomic-layer-deposition/experimental-usecase/13/fig_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"data": "| Partial pressure of SiH₄ [Pa] | Si contents [at.%] | Film thickness per cycle [nm/cycle] |\n|---|---|---|\n| 0.1 | 17 | 0.25 |\n| 1 | 15 | 0.23 |\n| 10 | 18 | 0.21 |\n| 100 | 19 | 0.19 |"
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"publication_title": "Metal-organic atomic-layer deposition of titanium-silicon-nitride films $\\odot$",
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FIG. 2. Dependence of the Si content in the $\mathrm{Ti - Si - N}$ films and deposition thickness per cycle on the $\mathrm{SiH_4 / NH_3}$ ratio for the films grown on $\mathrm{SiO_2}$ at the substrate temperature of $180^{\circ}\mathrm{C}$ . $\mathrm{SiH_4}$ and $\mathrm{NH_3}$ were simultaneously supplied ... | sci_imageminer__atomic_layer_deposition__experimental_usecase__13__fig_2 | atomic-layer-deposition/experimental-usecase/13/fig_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The chart shows the relation between SiH₄/NH₃ ratio and Si content and film thickness per cycle. As the ratio increases, the Si content increases until it reaches a plateau, while the film thickness per cycle decreases."
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"data": "| SiH₄/NH₃ ratio | Si Contents [at.%] | Film thickness per cycle [nm/cycle] |\n|---|---|---|\n| 10⁻² | 1 | 0.38 |\n| 10⁻¹ | 18 | 0.28 |\n| 10⁰ | 23 | 0.19 |\n| 10¹ | 23 | 0.01 |"
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FIG. 3. $1\mathrm{kHz}C - V$ measurements for MOS capacitors, $\mathrm{Cu(100nm) / 10nm}$ $\mathrm{Ti - Si - N}$ barrier layer (or without the barrier layer) $\mathrm{SiO_2}$ $100\mathrm{nm}) / N$ -type Si. a and b are the $C - V$ profiles for the MOS capacitor without the barrier layer before and after thermal... | sci_imageminer__atomic_layer_deposition__experimental_usecase__13__fig_3 | atomic-layer-deposition/experimental-usecase/13/fig_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"data": "| Voltage [V] | Before thermal treatment | No barrier capacitor | Ti-Si-N capacitor |\n| --- | --- | --- | --- |\n| -15 | 0.21 | 1.00 | 0.19 |\n| -10 | 0.22 | 1.00 | 0.20 |\n| -5 | 0.35 | 0.60 | 0.25 |\n| 0 | 1.00 | 0.90 | 1.00 |\n| 5 | 1.00 | 1.00 | 1.00 |\n| 10 | 1.00 | 1.00 | ... | [
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FIG. 4. Cross-sectional SEM micrograph of a $20~\mathrm{nm}$ Ti-Si-N film grown by MOALD at $180^{\circ}\mathrm{C}$ . Step coverage of the $\mathrm{Ti - Si - N}$ film is approximately $100\%$ even on the $0.3\mu \mathrm{m}$ diam hole with slightly negative slope and 10:1 aspect ratio. | sci_imageminer__atomic_layer_deposition__experimental_usecase__13__fig_4 | atomic-layer-deposition/experimental-usecase/13/fig_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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FIGURE 1: Illustration of ALD growth mechanisms and characterizations. (a) Idealized schematic of the mechanisms of ALD process for $\mathrm{WS}_2$ growth and in situ Nb doping. The doping concentration could be controlled by adjusting $\mathrm{NbS}_2$ cycle numbers. (b) Photographs of 400-cycle $\mathrm{WS}_2$ f... | sci_imageminer__atomic_layer_deposition__experimental_usecase__14__figure_1 | atomic-layer-deposition/experimental-usecase/14/figure_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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FIGURE 2: Material characterizations of ALD grown $\mathrm{WS}_2$ films without doping. (a) The XPS fine spectra of W 4f and S 2p for as-deposited and annealed 400-cycle $\mathrm{WS}_2$ film. Both $\mathrm{WS}_2$ and $\mathrm{WS}_{2 + x}$ peaks were observed, with the W/S ratio of 1:2.7. Only $\mathrm{WS}_2$ ... | sci_imageminer__atomic_layer_deposition__experimental_usecase__14__figure_2 | atomic-layer-deposition/experimental-usecase/14/figure_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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FIGURE 3: Material characterization of Nb-doped p-type $\mathrm{WS}_2$ . (a) The XPS fine spectra of as-deposited and annealed 400-cycle $\mathrm{WS}_2$ with 30-cycle Nb doping. $\mathrm{WS}_2$ $\mathrm{WS}_{2 + \mathrm{x}},$ and $\mathrm{NBs}_2$ were all observed in as-deposited Nb-doped $\mathrm{WS}_2$ film... | sci_imageminer__atomic_layer_deposition__experimental_usecase__14__figure_3 | atomic-layer-deposition/experimental-usecase/14/figure_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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FIGURE 4: The electrical properties of $\mathrm{WS}_2$ n-FETs and Nb-doped $\mathrm{WS}_2$ p-FETs. (a) CMOS-compatible process flow of FETs and schematic of device structures. (b) The transfer and output characteristics of $\mathrm{WS}_2$ n-FET with $2\mu \mathrm{m}$ gate width and the mobility distribution of ... | sci_imageminer__atomic_layer_deposition__experimental_usecase__14__figure_4 | atomic-layer-deposition/experimental-usecase/14/figure_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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FIG. 1. Schematic structures of the zirconium precursors $\mathrm{Zr(Cp)(BuDAD)(O^iPr)}$ , $\mathrm{Zr(MeCp)(TMEA)}$ , and $\mathrm{Zr(MeS_Cp)(TEA)}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_1 | atomic-layer-deposition/experimental-usecase/16/fig_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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FiG. 2. (a) Thermogravimetric analysis and (b) vapor pressures of the $\mathrm{Zr}$ precursors. | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_2 | atomic-layer-deposition/experimental-usecase/16/fig_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The chart shows the thermogravimetric analysis curves (weight loss percentage as a function of temperature) for the Zr precursors. Zr(Cp)(ᵗBuDAD)(OⁱPr) evaporates with minimal residue, two other precursors show decomposition."
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"data": "| Temperature (°C) | Weight loss (%) | Reagent + Conditions |\n|---|---|---|\n| 6 | 100.8 | Zr(Me_5Cp)(TEA) (vac) |\n| 98 | 100.8 | Zr(Me_5Cp)(TEA) (vac) |\n| 189 | 82.9 | Zr(Me_5Cp)(TEA) (vac) |\n| 231 | 15.3 | Zr(Me_5Cp)(TEA) (vac) |\n| 299 | 13.0 | Zr(Me_5Cp)(TEA) (vac) |\n| 4... | [
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FiG. 3. (a) Film growth rates at different temperatures with (a) water and (b) ozone as the oxygen source. Pulse times for $\mathrm{Zr}$ precursors, $\mathrm{H}_2\mathrm{O}$ and $\mathrm{O_3}$ were $1.0\mathrm{s}$ and purge times for all pulses $1.5\mathrm{s}$ | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_3 | atomic-layer-deposition/experimental-usecase/16/fig_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The chart shows the growth rates against temperatures for Zr precursors when using water as the oxygen source. The growth rate of films with Zr(Cp)(tBuDAD)(O^Pr), Zr(MeCp)(TMEA), and Zr(Me_5Cp)(TEA) compounds increases with temperature, with Zr(Cp)(tBuDAD)(O^Pr) showing the hi... | [
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"data": "| Temperature (°C) | Growth rate (Å/cycle) | Reagent | \n|---|---|---|\n| 198 | 0,22 | Zr(MeCp)(TMEA) |\n| 252 | 0,26 | Zr(MeCp)(TMEA) |\n| 300 | 0,25 | Zr(MeCp)(TMEA) |\n| 348 | 0,27 | Zr(MeCp)(TMEA) |\n| 373 | 0,32 | Zr(MeCp)(TMEA) |\n| 398 | 0,09 | Zr(Me_5Cp)(TEA) |\n| 424 | 0... | [
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FIG. 4. Film densities at different deposition temperatures with (a) water and (b) ozone as the oxygen source. | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_4 | atomic-layer-deposition/experimental-usecase/16/fig_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The chart shows the density of films deposited with water and Zr(Cp)(ᵗBuDAD)(OⁱPr), Zr(MeCp)(TMEA), or Zr(Me₅Cp)(TEA) as a function of temperature."
},
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"summary": "The chart shows the density of films deposited with ozone and Zr(Cp)(ᵗBuDAD)(OⁱPr)... | [
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"data": "| Temperature (°C) | Density (g/cm³) | Precursor |\n|---|---|---|\n| 398 | 4.7 | Zr (Me_5Cp) (TEA) |\n| 423 | 4.7 | Zr (Me_5Cp) (TEA) |\n| 200 | 3.8 | Zr (MeCp) (TMEA) |\n| 249 | 4.4 | Zr (MeCp) (TMEA) |\n| 300 | 5.2 | Zr (MeCp) (TMEA) |\n| 325 | 5.6 | Zr (MeCp) (TMEA) |\n| 347 |... | [
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FIG. 5. Film growth rates as a function of $\mathrm{Zr}$ precursor pulse length with ozone as the oxygen source. The pulsing sequence was $\mathrm{x}$ $\mathrm{slx} + 0.5$ sl1.0 sl1.5 s for $\mathrm{Zr}$ pulselpurgel $\mathrm{O_3}$ pulselpurge. | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_5 | atomic-layer-deposition/experimental-usecase/16/fig_5 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The scatter plot shows the growth rate of a material, when ozone is used as a precursor, as a function of Zr pulse length at different temperatures: Zr(Me₅Cp)(TEA) at 375°C and 300°C, Zr(Cp)(ᵗBuDAD)(OⁱPr) and Zr(MeCp)(TMEA) at 250°C. The growth rate for Zr(MeCp)(TMEA) continu... | [
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"data": "| Zr pulse length (s) | Growth rate (Å/cycle) | Reagent | Temperature (°C) |\n|---|---|---|---|\n| 0,5 | 0,28 | Zr(Me_5Cp)(TEA) | 300 |\n| 1,0 | 0,30 | Zr(Me_5Cp)(TEA) | 300 |\n| 1,5 | 0,30 | Zr(Me_5Cp)(TEA) | 300 |\n| 2,0 | 0,31 | Zr(Me_5Cp)(TEA) | 300 |\n| 2,5 | 0,32 | Zr(Me_5C... | [
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"answer": "No. The growth rate continues to rise as more precursor is dosed, the deposition is therefore likely influenced by CVD-li... | [
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FIG. 6. X-ray diffractograms of the films deposited with (a) $\mathrm{Zr(Me_5Cp)(TEA) / O_3}$ at $250–425^{\circ}\mathrm{C}$ and (b) $\mathrm{Zr(MeCp)TMEA) / H_2O}$ process at $250–375^{\circ}\mathrm{C}$ . Film thicknesses were in (a) $30–40\mathrm{nm}$ and in (b) $50\mathrm{nm}$ except at $375^{\circ}\math... | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_6 | atomic-layer-deposition/experimental-usecase/16/fig_6 | train | materials_science | atomic_layer_deposition | null | experimental | [
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},
{
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"summary": "The plot shows XRD pattern for films deposited with Zr(Me... | [
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"data": "| Temperature, °C | 2θ | Intensity (arb. units) | Assignment |\n|---|---|---|---|\n|250|30.46| 35| - |\n|250|50.88| 18.29| - |\n|275|30.53| 129| t(011) |\n|275|35.51| 57| - |\n|275|51.03| 57| t(112)/t(020) |\n|275|60.43| 43| - |\n|300|30.53| 428| t(011) |\n|300|34.66| 41| - |\n... | [
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"answer": "The film is amorphous."
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"... | {
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/16/image... | train/atomic-layer-deposition/experimental-usecase/16/images/fig_6.jpg | train/atomic-layer-deposition/experimental-usecase/16/images/fig_6.json | train/atomic-layer-deposition/experimental-usecase/16/content.json | Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with $H_{2}O$ and $O_{3}$ for atomic layer deposition of $ZrO_{2}$ | Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD) | 10.1161/16079539 | https://doi.org/10.1161/16079539 | 2,019 | Sanni Seppala et al.pdf | fig_6 | 672 | 1,194 | JPEG | a0f42ab39a2795b36737c663cbcfc59aa55aca5026f741240a6065dc54f2beb6 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Fig. 7. X-ray diffractograms of films with different thicknesses deposited with (a) $\mathrm{Zr(Cp)(^tBuDAD)(O^iPr) / H_2O}$ process at $375^{\circ}\mathrm{C}$ and (b) $\mathrm{Zr(Me_5Cp)(TEA) / O_3}$ process at $300^{\circ}\mathrm{C}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_7 | atomic-layer-deposition/experimental-usecase/16/fig_7 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"label": "stacked spectra chart"
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{
"panel_id": "b",
"label": "stacked spectra chart"
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"panel_id": "a",
"summary": "The plot shows X-ray diffraction patterns for Zr(Cp)(ᵗBuDAD)(OⁱPr) process with water for films of different thickness (9, 22, and 70 nm)."
},
{
"panel_id": "b",
"summary": "The plot shows X-ray diffraction patterns for Zr(Me₅Cp)(TEA) process with ozone for films o... | [
{
"panel_id": "a",
"data": "| Thickness, nm | 2θ | Intensity (arb. units) | Assignment |\n|---|---|---|---|\n| 9| 30.00 |35| t(001)|\n| 9| 50.42 |35| t(020)|\n|22| 30.00 |132| t(001)|\n|22| 35.07 |7| t(002)/t(110)|\n| 22| 50.42 |21| t(020)|\n| 22|60.42 |7| t(013)/t(022)|\n|70| 30.00 |410| t(001)|\n|70| 35.0... | [
{
"panel_id": "a",
"question_type": "Comparative/Trend",
"question": "How do the films rank from most crystalline to less crystalline?",
"answer_type": "List",
"answer": "70 nm, 22 nm, 9 nm"
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{
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"question": "Does increasing ... | [
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"authors": "Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD)",
"doi": "10.1161/16079539",
"... | {
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FiG. 8. (a) TEM image of the MIM stack and (b) a close-up of the $\mathrm{ZrO_2}$ film. $\mathrm{ZrO_2}$ was deposited with the $\mathrm{Zr(Me_5Cp)(TEA) / O_3}$ process at $300^{\circ}\mathrm{C}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_8 | atomic-layer-deposition/experimental-usecase/16/fig_8 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"authors": "Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD)",
"doi": "10.1161/16079539",
"... | {
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/16/image... | train/atomic-layer-deposition/experimental-usecase/16/images/fig_8.jpg | train/atomic-layer-deposition/experimental-usecase/16/images/fig_8.json | train/atomic-layer-deposition/experimental-usecase/16/content.json | Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with $H_{2}O$ and $O_{3}$ for atomic layer deposition of $ZrO_{2}$ | Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD) | 10.1161/16079539 | https://doi.org/10.1161/16079539 | 2,019 | Sanni Seppala et al.pdf | fig_8 | 644 | 992 | JPEG | 1823f2f31571be9dd480ab4a3a14a6bd9b73f836c910ebe630f9cd3329304f9d | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FIG. 9. Leakage current density curves of the $\mathrm{ZrO_2}$ films deposited with $\mathrm{O_3}$ at $300^{\circ}\mathrm{C}$ . The polarity of the electric field indicates the potential applied to the top electrode. | sci_imageminer__atomic_layer_deposition__experimental_usecase__16__fig_9 | atomic-layer-deposition/experimental-usecase/16/fig_9 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
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"panel_id": "a",
"summary": "The chart shows the leakage current density versus electric field for films deposited at 300°C using ozone and 3 different Zr precursors (Zr(Cp)(ᵗBuDAD)(OⁱPr), Zr(MeCp)(TMEA) and Zr(Me₅Cp)(TEA))"
}
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{
"panel_id": "a",
"data": "| Electric field (MV/cm) | Current density (A/cm²) | Reagent |\n|---|---|---|\n| -2,5 | 0,000034413049869757 | Zr(Cp)(tBuDAD)(O^iPr) |\n| -2,4 | 0,000043492871235381 | Zr(Cp)(tBuDAD)(O^iPr) |\n| -2,3 | 0,000021544346900319 | Zr(Cp)(tBuDAD)(O^iPr) |\n| -2,3 | 0,000029439237258586 ... | [
{
"panel_id": "a",
"question_type": "Comparative/Trend",
"question": "Which precursor produces a film with poorest insulation?",
"answer_type": "Factoid",
"answer": "Zr(MeCp)(TMEA)"
},
{
"panel_id": "a",
"question_type": "Comparative/Trend",
"question": "Is the behaviour of Zr(Me... | [
{
"panel_id": "a",
"x": 2,
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"width": 645,
"height": 493
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] | {
"publication_title": "Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with $H_{2}O$ and $O_{3}$ for atomic layer deposition of $ZrO_{2}$",
"authors": "Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD)",
"doi": "10.1161/16079539",
"... | {
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/16/image... | train/atomic-layer-deposition/experimental-usecase/16/images/fig_9.jpg | train/atomic-layer-deposition/experimental-usecase/16/images/fig_9.json | train/atomic-layer-deposition/experimental-usecase/16/content.json | Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with $H_{2}O$ and $O_{3}$ for atomic layer deposition of $ZrO_{2}$ | Special Collection: 2019 Special Collection on Atomic Layer Deposition (ALD) | 10.1161/16079539 | https://doi.org/10.1161/16079539 | 2,019 | Sanni Seppala et al.pdf | fig_9 | 648 | 500 | JPEG | 49bd449f26ba57082aa457905da2331b6b06c2da0a6d6ffce4143d0976ca59e9 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FiG.4. rPRA t t t t cursor Ar purge. The process parameters for these depositions are stated in Table I. | sci_imageminer__atomic_layer_deposition__experimental_usecase__18__fig4 | atomic-layer-deposition/experimental-usecase/18/fig4 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
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"label": "line chart"
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{
"panel_id": "a",
"summary": "ZrN growth per cycle versus substrate temperature shows a low-temperature ALD window with stable GPC and a sharp increase at higher temperatures due to thermally activated, non-self-limiting growth."
},
{
"panel_id": "b",
"summary": "GPC saturation with increasing ... | [
{
"panel_id": "a",
"data": "| Substrate Temperature (°C) | GPC (nm/cycle) |\n|---|---|\n| 100 | ~0.11 |\n| 150 | ~0.10 |\n| 200 | ~0.11 |\n| 250 | ~0.15 |\n| 300 | ~0.55 |"
},
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"data": "| TDMAZr pulse (s) | GPC (nm/cycle) |\n|---|---|\n| 0.02 | ~0.07 |\n| 0.04 | ~0.09 |\n| 0.06... | [
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"question_type": "Process-Oriented",
"question": "Do the growth-per-cycle trends shown in the figure confirm self-limiting PEALD behavior for ZrN under optimized conditions?",
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"answer": "Yes"
},
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"publication_title": "Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\\% \\text{H}_2 + 95\\% \\text{N}_2)$ plasma $\\odot$",
"authors": "Triratna Muneshwar; Ken Cadien",
"doi": "10.1116/14915122",
"do... | {
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/18/image... | train/atomic-layer-deposition/experimental-usecase/18/images/fig4.jpg | train/atomic-layer-deposition/experimental-usecase/18/images/fig4.json | train/atomic-layer-deposition/experimental-usecase/18/content.json | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\% \text{H}_2 + 95\% \text{N}_2)$ plasma $\odot$ | Triratna Muneshwar; Ken Cadien | 10.1116/14915122 | https://doi.org/10.1116/14915122 | 2,015 | Triratna Muneshwar et al.pdf | fig4 | 997 | 741 | JPEG | 845e3a13ad4767a45632c671a54f084ac8248c6d8b390930dd902684da8710fe | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FIG. 1. (Color online) (a) ALD150LX reactor design schematic highlighting TDMAZr and forming gas delivery lines and the M2000DI spectroscopic ellipsometer for in-situ ALD growth characterization. (b) Precursor and plasma pulsing sequence for a ZrN PEALD cycle. | sci_imageminer__atomic_layer_deposition__experimental_usecase__18__fig_1 | atomic-layer-deposition/experimental-usecase/18/fig_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"label": "apparatus diagram"
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{
"panel_id": "b",
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{
"panel_id": "a",
"summary": "Plasma-enhanced ALD reactor configuration for ZrN deposition, showing TDMAZr delivery with Ar carrier gas, forming-gas plasma generation via ICP, substrate placement, pumping, and in-situ spectroscopic ellipsometry for real-time growth monitoring, enabling low-temperature, pla... | [
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"data": ""
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"data": "| Time step | TDMAZr pulse | Forming gas | Plasma power | Ar gas flow |\n|---|---|---|---|---|\n| t1 | ON | OFF | OFF | ON |\n| t2 | OFF | OFF | OFF | ON |\n| t3 | OFF | ON | ON | ON |\n| t4 | OFF | OFF | OFF | ON |"
}
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"panel_id": "a",
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"question": "Does the figure show temporally separated precursor and plasma steps required for self-limiting PEALD growth?",
"answer_type": "Yes/No",
"answer": "Yes"
},
{
"panel_id": "b",
"question_type": "Comparative/Trend",
... | [
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{
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"x": 4,
"y": 624,
"width": 673,
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"publication_title": "Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\\% \\text{H}_2 + 95\\% \\text{N}_2)$ plasma $\\odot$",
"authors": "Triratna Muneshwar; Ken Cadien",
"doi": "10.1116/14915122",
"do... | {
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/18/image... | train/atomic-layer-deposition/experimental-usecase/18/images/fig_1.jpg | train/atomic-layer-deposition/experimental-usecase/18/images/fig_1.json | train/atomic-layer-deposition/experimental-usecase/18/content.json | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\% \text{H}_2 + 95\% \text{N}_2)$ plasma $\odot$ | Triratna Muneshwar; Ken Cadien | 10.1116/14915122 | https://doi.org/10.1116/14915122 | 2,015 | Triratna Muneshwar et al.pdf | fig_1 | 684 | 877 | JPEG | ae09ad2500e9ed29218bef4bc10a86c337e28fbb6286e674a9235b8a4b3ecc0d | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FIG. 2. (a) SE parameters $(\Psi ,\Delta)$ measured on blank Si substrate (solid line) and after 10 cycles $\mathrm{ZrN}$ deposition (dotted line). (b) The dynamic SE parameter $\Delta$ measured at $4.0\mathrm{eV}$ for 10 cycles $\mathrm{ZrN}$ deposition. Systematic variation in $\Delta$ with precursor puls... | sci_imageminer__atomic_layer_deposition__experimental_usecase__18__fig_2 | atomic-layer-deposition/experimental-usecase/18/fig_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
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{
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{
"panel_id": "a",
"summary": "Spectroscopic ellipsometry parameters Ψ and Δ versus photon energy for a blank Si substrate and after 10 ZrN PEALD cycles. Spectral shifts after deposition confirm ultrathin ZrN film formation and demonstrate SE sensitivity to early-stage growth."
},
{
"panel_id": "b",... | [
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"data": "| Photon Energy (eV) | Δ (°) | Ψ (°) |\n|---|---|---|\n| 1.0 | ~175 | ~35 |\n| 2.0 | ~170 | ~33 |\n| 3.0 | ~165 | ~32 |\n| 4.0 | ~150 | ~30 |\n| 5.0 | ~165 | ~31 |\n| 6.0 | ~170 | ~32 |"
},
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"data": "| Time (s) | Δ (°) |\n|---|---|\n| 100 | ~144 |\n|... | [
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"answer": "Yes"
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"publication_title": "Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\\% \\text{H}_2 + 95\\% \\text{N}_2)$ plasma $\\odot$",
"authors": "Triratna Muneshwar; Ken Cadien",
"doi": "10.1116/14915122",
"do... | {
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/18/image... | train/atomic-layer-deposition/experimental-usecase/18/images/fig_2.jpg | train/atomic-layer-deposition/experimental-usecase/18/images/fig_2.json | train/atomic-layer-deposition/experimental-usecase/18/content.json | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\% \text{H}_2 + 95\% \text{N}_2)$ plasma $\odot$ | Triratna Muneshwar; Ken Cadien | 10.1116/14915122 | https://doi.org/10.1116/14915122 | 2,015 | Triratna Muneshwar et al.pdf | fig_2 | 1,003 | 366 | JPEG | f4210e67b9670ff5a81442730500152efe3b346a34cf84ffeec5430209fa7b72 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FIG. 3. (a) Film thickness vs number of PEALD cycles as determined from d-iSE data analysis for $\mathrm{ZrN}$ deposition on Si substrate at $\mathrm{T_{sub} = 150^{\circ}C}$ $\mathrm{t_1 = 0.12s}$ $\mathrm{t_2 = 15s}$ $\mathrm{t_3 = 15s}$ and $\mathrm{t_4 = 15s}$ In a steady growth regime, GPC of $0.10\mathrm{n... | sci_imageminer__atomic_layer_deposition__experimental_usecase__18__fig_3 | atomic-layer-deposition/experimental-usecase/18/fig_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
"label": "line chart"
},
{
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"label": "multiple line chart"
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"panel_id": "a",
"summary": "ZrN film thickness increases linearly with PEALD cycle number, measured by dynamic in-situ spectroscopic ellipsometry. Linear fit gives a growth per cycle of ~0.103 nm, confirming immediate nucleation and self-limiting ALD behavior."
},
{
"panel_id": "b",
"summary"... | [
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"data": "| ALD cycle # | ZrN thickness (nm) |\n|---|---|\n| 5 | ~0.5 |\n| 10 | ~1.0 |\n| 20 | ~2.1 |\n| 30 | ~3.1 |\n| 40 | ~4.1 |\n| 50 | ~5.2 |\n| 60 | ~6.2 |"
},
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"data": "| ALD cycle # | Thickness (nm) |\n|---|---|\n| 25 | ~2.6 |\n| 50 | ~5.2 |\n| 75 | ~... | [
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"question_type": "Process-Oriented",
"question": "Does the figure demonstrate constant, self-limiting growth per cycle during ZrN PEALD?",
"answer_type": "Yes/No",
"answer": "Yes"
},
{
"panel_id": "b",
"question_type": "Comparative/Trend",
"question": "What rel... | [
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"publication_title": "Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\\% \\text{H}_2 + 95\\% \\text{N}_2)$ plasma $\\odot$",
"authors": "Triratna Muneshwar; Ken Cadien",
"doi": "10.1116/14915122",
"do... | {
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/18/image... | train/atomic-layer-deposition/experimental-usecase/18/images/fig_3.jpg | train/atomic-layer-deposition/experimental-usecase/18/images/fig_3.json | train/atomic-layer-deposition/experimental-usecase/18/content.json | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\% \text{H}_2 + 95\% \text{N}_2)$ plasma $\odot$ | Triratna Muneshwar; Ken Cadien | 10.1116/14915122 | https://doi.org/10.1116/14915122 | 2,015 | Triratna Muneshwar et al.pdf | fig_3 | 608 | 453 | JPEG | 449c81a6b1abc01002f00a7b20dc5332c9f680bd05fbde0eedbfe9856490c32d | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FIG. 5. Imaginary part of the complex dielectric function $(\epsilon_{2})$ for $35.3\mathrm{nm}$ thick $\mathrm{ZrN}$ PEALD film at $150^{\circ}\mathrm{C}$ determined from in-situ SE measurements. The free electron and bound electron contributions to the dielectric function of $\mathrm{ZrN}$ film are represen... | sci_imageminer__atomic_layer_deposition__experimental_usecase__18__fig_5 | atomic-layer-deposition/experimental-usecase/18/fig_5 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
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"data": "| Photon energy (eV) | Dielectric function ε₂ |\n|---|---|\n| 0.7 | ~2.0 |\n| 1.0 | ~0.8 |\n| 2.0 | ~0.6 |\n| 3.0 | ~1.2 |\n| 4.0 | ~2.8 |\n| 5.0 | ~3.5 |\n| 6.0 | ~4.0 |\n| 7.0 | ~3.6 |"
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"publication_title": "Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\\% \\text{H}_2 + 95\\% \\text{N}_2)$ plasma $\\odot$",
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FIG. 6. Valence Band photoelectron emission spectrum measured for $35.3\mathrm{nm}$ thick $\mathrm{ZrN}$ PEALD film grown at $150^{\circ}\mathrm{C}$ . Before XPS measurement $\mathrm{ZrN}$ film surface was sputter cleaned for $180\mathrm{s}$ with $4.0\mathrm{keV}$ $\mathrm{Ar}^{+}$ ions. | sci_imageminer__atomic_layer_deposition__experimental_usecase__18__fig_6 | atomic-layer-deposition/experimental-usecase/18/fig_6 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The figure presents the valence-band XPS spectrum of a 35.3 nm thick ZrN film deposited by PEALD at 150 °C after Ar⁺ sputter cleaning. The spectrum shows clear intensity at the Fermi level arising from Zr 4d states, confirming metallic conductivity, along with hybridized N 2p–... | [
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"data": "| Binding Energy (eV) | Relative Intensity (a.u.) | Assignment |\n|---|---|---|\n| 18.0 | ~0.8 | N 2s |\n| 14.0 | ~0.5 | Valence-band background |\n| 10.0 | ~0.6 | O 2p |\n| 6.0 | ~1.2 | Hybridized N 2p – Zr 4d |\n| 4.0 | ~1.6 | Hybridized N 2p – Zr 4d |\n| 2.0 | ~0.9 | Zr 4d ... | [
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"publication_title": "Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\\% \\text{H}_2 + 95\\% \\text{N}_2)$ plasma $\\odot$",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/18/image... | train/atomic-layer-deposition/experimental-usecase/18/images/fig_6.jpg | train/atomic-layer-deposition/experimental-usecase/18/images/fig_6.json | train/atomic-layer-deposition/experimental-usecase/18/content.json | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas $(5\% \text{H}_2 + 95\% \text{N}_2)$ plasma $\odot$ | Triratna Muneshwar; Ken Cadien | 10.1116/14915122 | https://doi.org/10.1116/14915122 | 2,015 | Triratna Muneshwar et al.pdf | fig_6 | 608 | 447 | JPEG | 20894e5accd51a1f884acd918393641ebede4a7dad3faad5a405ea4fb989fef1 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
FiG. 7. (a) Electrical resistivity of $\mathrm{ZrN}$ PEALD films deposited on thermal $\mathrm{SiO_2}$ substrate at $150^{\circ}\mathrm{C}$ , as a function of measurement temperature. (b) Plot of $\Delta \rho /\rho_{\mathrm{o}}$ vs measurement temperature showing TCR of $0.0088 / ^{\circ}\mathrm{C}$ for $\mat... | sci_imageminer__atomic_layer_deposition__experimental_usecase__18__fig_7 | atomic-layer-deposition/experimental-usecase/18/fig_7 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "Electrical resistivity of PEALD-grown ZrN films versus measurement temperature shows a linear increase, characteristic of metallic conduction dominated by electron–phonon scattering."
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"data": "| Temperature (°C) | Resistivity (µΩ·cm) |\n|---|---|\n| 25 | ~560 |\n| 50 | ~650 |\n| 75 | ~750 |\n| 100 | ~880 |\n| 125 | ~1020 |"
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"data": "| Temperature (°C) | Δρ/ρ₀ |\n|---|---|\n| 25 | 0.00 |\n| 50 | ~0.002 |\n| 75 | ~0.004 |\n| 100 | ... | [
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Figure 1. Dependence of the platinum film growth rate on the $\mathrm{MeCpPtMe}_3$ and air pulse times. The air pulse time in the $\mathrm{MeCpPtMe}_3$ experiments was $1.5\mathrm{s}$ and the $\mathrm{MeCpPtMe}_3$ pulse time in the air pulse experiments was $0.5\mathrm{s}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__2__figure_1 | atomic-layer-deposition/experimental-usecase/2/figure_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The scatter plot compares the ALD growth rate of Pt as a function of pulse duration for two independent series: varying MeCpPtMe₃ pulse time at fixed air exposure and varying air pulse time at fixed MeCpPtMe₃ exposure. The MeCpPtMe₃-pulse series shows a modest increase from ~0... | [
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"data": "| Pulse time (s) | MeCpPtMe₃ pulse series (Å cycle⁻¹) | Air pulse series (Å cycle⁻¹) |\n|----------------|-----------------------------------|-------------------------------|\n| 0.0 | ~0.44 | - | \n| 0.5 ... | [
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"answer": "Increasing the MeCpPtMe₃ ... | [
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"publication_title": "Atomic Layer Deposition of Platinum Thin Films",
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Figure 2. Film thickness vs the number of reaction cycles completed. | sci_imageminer__atomic_layer_deposition__experimental_usecase__2__figure_2 | atomic-layer-deposition/experimental-usecase/2/figure_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The chart shows the evolution of film thickness as a function of the total number of ALD reaction cycles. The relationship is strongly linear, with thickness increasing from ~35 nm at 1000 cycles to ~105 nm at 3000 cycles. The linear fit and narrow error bars suggest a stable,... | [
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"data": "| Number of reaction cycles | Film thickness (nm) |\n|---------------------------|----------------------|\n| 1000 | ~35 |\n| 1500 | ~50 |\n| 2000 | ~70 |\n| 3000 ... | [
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"question": "In figure (a), what sequential ALD process characteristics must remain stable for the film thickness to scale linearly with the number of reaction cycles?",
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"answer": "- Constant surface saturation d... | [
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Figure 3. Thickness profiles of platinum films grown with short and long $\mathrm{MeCpPtMe_3}$ pulses of 0.2 and $1.5\mathrm{s}$ , respectively. The profile is measured along the gas flow direction at various distances from the leading edge of the substrate, that is, the edge closest to the precursor inlet. | sci_imageminer__atomic_layer_deposition__experimental_usecase__2__figure_3 | atomic-layer-deposition/experimental-usecase/2/figure_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "Figure shows film thickness profiles for platinum ALD using short (0.2 s) and long (1.5 s) MeCpPtMe₃ precursor pulses as a function of substrate position along the gas-flow direction. Long precursor pulses yield consistently thicker films, reflecting greater precursor availabi... | [
{
"panel_id": "a",
"data": "| Distance from leading edge (cm) | Long-pulse thickness (nm) | Short-pulse thickness (nm) |\n|---------------------------------|---------------------------|----------------------------|\n| 1 | ~78 ± 5 | ~66 ± 5 |... | [
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"answer": "Longer MeCpPtMe₃ pulses increase the total precursor do... | [
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Figure 4. (a) XRD pattern of a $110$ -nm-thick platinum film and (b) rocking curve of the (111) reflection $(2\theta = 39.9^{\circ})$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__2__figure_4 | atomic-layer-deposition/experimental-usecase/2/figure_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "Subfigure (a) shows the XRD 2θ scan of a ~110 nm Pt film, revealing strong (111) texturing with much weaker (200), (220), (311), and (222) reflections. The dominant (111) peak indicates preferential orientation commonly observed in ALD-grown FCC metals when grain coalescence a... | [
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"data": "| 2θ peak position (°) | Assigned plane |\n|----------------------|----------------|\n| ~40.0 | (111) |\n| ~46.2 | (200) |\n| ~67.4 | (220) |\n| ~81.2 | (311) |\n| ~85.6 ... | [
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"answer": "ALD conditions typically promote layer-by-layer growth governed by surface-mediated reaction... | [
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"publication_title": "Atomic Layer Deposition of Platinum Thin Films",
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Figure 5. SEM images of (a) 50- and (b) 110-nm-thick platinum films. | sci_imageminer__atomic_layer_deposition__experimental_usecase__2__figure_5 | atomic-layer-deposition/experimental-usecase/2/figure_5 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "Subfigure (a) shows the surface morphology of a ~50 nm ALD-grown Pt film, characterized by a dense population of small, bright Pt nanoparticles distributed across the substrate. The grains appear closely packed, indicating early coalescence but with significant nanoscale rough... | [
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"answer": "During the early stages of Pt ALD, individual adsorption–reduction event... | [
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Figure 6. AFM images of (a) 50- and (b) 110-nm-thick platinum films. Please note that the images have different $\mathcal{Z}$ -axis scales. | sci_imageminer__atomic_layer_deposition__experimental_usecase__2__figure_6 | atomic-layer-deposition/experimental-usecase/2/figure_6 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "Subfigure (a) shows a 3D AFM height map of a ~50 nm ALD-grown Pt film. The topology consists of rounded hill-valley structures with moderate amplitude, indicating partially coalesced grains that have not yet reached full surface continuity."
},
{
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"... | [
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Fig. 1. Growth rate of LiF thin films as a function of deposition temperature. Lithd and $\mathrm{TiF_4}$ pulse lengths were 2 s and purge times between these pulses were 4 s. | sci_imageminer__atomic_layer_deposition__experimental_usecase__22__fig_1 | atomic-layer-deposition/experimental-usecase/22/fig_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"data": "| Deposition temperature / °C | Growth rate Å / cycle |\n|---|---|\n| 250 | 1.5 ± 0.1 |\n| 275 | 1.3 ± 0.1 |\n| 300 | 1.2 ± 0.1 |\n| 310 | 1.0 ± 0.1 |\n| 350 | 1.2 ± 0.1 |"
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Fig. 2. Growth rate of LiF thin films as a function of $\mathrm{TiF_4}$ pulse length at $325^{\circ}C$ The Lithd pulse was kept at 2 s and purge times were 4 s. | sci_imageminer__atomic_layer_deposition__experimental_usecase__22__fig_2 | atomic-layer-deposition/experimental-usecase/22/fig_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"data": "| TiF, pulse length / s | Growth rate Å/cycle |\n|---|---|\n| 0.5 | 0.95 |\n| 1 | 1.00 |\n| 2 | 0.95 |\n| 3 | 1.20 |\n| 4 | 1.30 |\n| 6 | 1.40 |"
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Fig. 3. Growth rate of LiF thin films as a function of Lithd pulse length at $325^{\circ}C$ The $\mathrm{TiF_4}$ pulse was kept at 1 s and purge times were 4 s. | sci_imageminer__atomic_layer_deposition__experimental_usecase__22__fig_3 | atomic-layer-deposition/experimental-usecase/22/fig_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Fig. 4. X-Ray diffractograms of LiF thin films deposited at various temperatures. Lithd and $\mathrm{TiF_4}$ pulse lengths were $2\mathrm{s}$ , and purge times between these pulses were $4\mathrm{s}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__22__fig_4 | atomic-layer-deposition/experimental-usecase/22/fig_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Fig. 5. FESEM images of LiF films deposited at various temperatures on $\mathrm{SiO_2 / Si(111)}$ substrates. Deposition temperatures and film thicknesses are; a) $250^{\circ}\mathrm{C}$ $111\mathrm{nm}$ , b) $275^{\circ}\mathrm{C}$ $97\mathrm{nm}$ , c) $300^{\circ}\mathrm{C}$ $88\mathrm{nm}$ , d) $325^{\circ}\ma... | sci_imageminer__atomic_layer_deposition__experimental_usecase__22__fig_5 | atomic-layer-deposition/experimental-usecase/22/fig_5 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Fig. 6. AFM images of LiF films deposited at various temperatures. Deposition temperatures, films thicknesses, and rms roughnesses are; a) $250^{\circ}\mathrm{C}$ 111 nm 6.3 nm, b) $275^{\circ}\mathrm{C}$ 97 nm 9.5 nm, c) $300^{\circ}\mathrm{C}$ 88 nm 12.3 nm, d) $325^{\circ}\mathrm{C}$ 73 nm 15.9 nm, and e) $... | sci_imageminer__atomic_layer_deposition__experimental_usecase__22__fig_6 | atomic-layer-deposition/experimental-usecase/22/fig_6 | train | materials_science | atomic_layer_deposition | null | experimental | [
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null | sci_imageminer__atomic_layer_deposition__experimental_usecase__25__f0c41f11e9c5ab863fee1ff70b7d7442935b0ee8edf971cfbc7285ccc6107b34 | atomic-layer-deposition/experimental-usecase/25/f0c41f11e9c5ab863fee1ff70b7d7442935b0ee8edf971cfbc7285ccc6107b34 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"data": "| Process Step | Description |\n|--------------------------------------|--------------------------------------------------|\n| Precursors | Ge(N(CH₃)₂)₄ and Sn(N(CH₃)₂)₄ or Zn(C₂H₅)₂ |\n|... | [
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"publication_title": "$\\mathsf{Sn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ and $\\mathsf{Zn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ by Atomic Layer Deposition—Growth Dynamics, Film Properties, and Compositional Tuning for Charge Selective Transport in $(\\mathsf{Ag},\\mathsf{Cu})(\\mathsf{In},\\mathsf{Ga})\\mathsf{Se... | {
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Figure 1. Estimated range of $E_{c}$ and $E_{\mathrm{v}}$ positions as a function of the cation ratio in ZGO (blue) and TGO (red) films based on previous findings for the $E_{c}$ and $E_{\mathrm{v}}$ positions of $\mathrm{ZnO}$ , $\mathrm{SnO_y}$ , and $\mathrm{GeO_y}$ 21-23 | sci_imageminer__atomic_layer_deposition__experimental_usecase__25__figure_1 | atomic-layer-deposition/experimental-usecase/25/figure_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 10. $JV$ sweeps for the best solar cells using the same RBF PDT ACIGS absorber and either TGO 0.077, ZGO 0.32, ZTO 0.2, or CdS as the ESL. Scans of solar cells using a pretreatment of either one cycle of ALD $\mathrm{Al}_2\mathrm{O}_3$ $\mathrm{(TMA + H_2O)}$ or three cycles of ALD ZnS (DEZ $+\mathrm{H}_2\m... | sci_imageminer__atomic_layer_deposition__experimental_usecase__25__figure_10 | atomic-layer-deposition/experimental-usecase/25/figure_10 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The PV characteristics is illustrated in the chart where the current density (in mA/cm²) is plotted as a function of bias voltage (in V) for various materials, including TGO 0.077, TGO 0.077 TMA, TGO 0.077 ZnS, ZGO 0.32, ZTO 0.20, and CdS."
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"data": "| Bias (V) | TGO 0.077 | TGO 0.077 TMA | TGO 0.077 ZnS | ZGO 0.32 | ZTO 0.20 | CdS |\n|----------|-----------|---------------|---------------|----------|----------|-----|\n| -0.5 | -35 | -35 | -35 | -35 | -35 | -35 |\n| 0.0 | 0 ... | [
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"question": "Which ESL between TGO and ZGO gives the highest Voc?",
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"answer": "ZGO 0.32 with a Voc of 704 ± 8 mV. The solar cells with ZGO 0.32 ESLs had almost the same Voc as those with ZTO 0.2 but, on aver... | [
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"publication_title": "$\\mathsf{Sn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ and $\\mathsf{Zn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ by Atomic Layer Deposition—Growth Dynamics, Film Properties, and Compositional Tuning for Charge Selective Transport in $(\\mathsf{Ag},\\mathsf{Cu})(\\mathsf{In},\\mathsf{Ga})\\mathsf{Se... | {
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Figure 2. (a) Cation ratio measured by XRF/RBS for TGO and ZGO films in Table 1 as a function of the pulse ratio of the supercycle process. (b) GPC measured by XRR for the TGO and ZGO films (Table S2). | sci_imageminer__atomic_layer_deposition__experimental_usecase__25__figure_2 | atomic-layer-deposition/experimental-usecase/25/figure_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"data": "| Pulse Ratio Ge/(Ge + Sn or Zn) | Cation Ratio (TGO) | Cation Ratio (ZGO) |\n|--------------------------------|---------------------|---------------------|\n| 0.0 | 0.00 | 0.00 |\n| 0.1 | 0.08 ... | [
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"publication_title": "$\\mathsf{Sn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ and $\\mathsf{Zn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ by Atomic Layer Deposition—Growth Dynamics, Film Properties, and Compositional Tuning for Charge Selective Transport in $(\\mathsf{Ag},\\mathsf{Cu})(\\mathsf{In},\\mathsf{Ga})\\mathsf{Se... | {
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Figure 3. MPC for 400 ALD cycles of either $\mathrm{ZnO}$ (red diamonds) or $\mathrm{GeO}_y$ (blue squares). The deposition of $\mathrm{ZnO}$ was interrupted after 200 cycles by performing a single $\mathrm{GeO}_y$ cycle before depositing another 200 cycles of $\mathrm{ZnO}$ . Similarly, the deposition of $\m... | sci_imageminer__atomic_layer_deposition__experimental_usecase__25__figure_3 | atomic-layer-deposition/experimental-usecase/25/figure_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"data": "| Cycle Number | ZnO / 1 cycle GeOₓ / ZnO (ng/cm²) | GeOₓ / 1 cycle ZnO / GeOₓ (ng/cm²) |\n|--------------|------------------------------------|--------------------------------------|\n| 0 | 140 | 20 |\n|... | [
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"answer": "The deposition of ZnO was interrupted after 200 cycles by performing a single GeOy cycle before depositing another 200 cycles of ZnO. Similarly, the d... | [
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"publication_title": "$\\mathsf{Sn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ and $\\mathsf{Zn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ by Atomic Layer Deposition—Growth Dynamics, Film Properties, and Compositional Tuning for Charge Selective Transport in $(\\mathsf{Ag},\\mathsf{Cu})(\\mathsf{In},\\mathsf{Ga})\\mathsf{Se... | {
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Figure 4. GI-XRD diffractograms of (a) TGO, and (b) ZGO films deposited on fused silica as a function of the cation ratio, $x$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__25__figure_4 | atomic-layer-deposition/experimental-usecase/25/figure_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The figure shows GI-XRD diffractograms, log intensity against 2θ for different values of x, cation ratio of Ge doped tin oxide TGO"
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"summary": "The figure shows GI-XRD diffractograms, log intensity against 2θ for different values of x, cation... | [
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"data": "| 2θ (°) | x = 1 | x = 0.30 | x = 0 |\n|--------|-------|----------|-------|\n| 30–35 | Broad | Broad | Broad |\n| 40–45 | Broad | Broad | Broad |\n| 50–55 | Broad | Broad | Broad |\n| 60–65 | Broad | Broad | Broad |\n| 70–75 | Broad | Broad | Broad |"
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... | [
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"publication_title": "$\\mathsf{Sn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ and $\\mathsf{Zn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ by Atomic Layer Deposition—Growth Dynamics, Film Properties, and Compositional Tuning for Charge Selective Transport in $(\\mathsf{Ag},\\mathsf{Cu})(\\mathsf{In},\\mathsf{Ga})\\mathsf{Se... | {
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Figure 5. XPS $E_{\mathrm{v}}$ spectra of the investigated (a) TGO and (b) ZGO films deposited on fused silica with varying cation ratios, $x$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__25__figure_5 | atomic-layer-deposition/experimental-usecase/25/figure_5 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The figure show svalence band XPS Ev spectra as a function of binding energy for Ge doped Tin oxide, TGO."
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"summary": "The figure show svalence band XPS Ev spectra as a function of binding energy for Ge doped Zinc oxide, ZGO."
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"data": "| Binding Energy (eV) | x = 1 | x = 0.30 | x = 0.16 | x = 0.077 | x = 0 |\n|----------------------|---------|----------|----------|-----------|---------|\n| 10 | 300 | 280 | 270 | 260 | 250 |\n| 8 | 320 | 300 ... | [
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"answer": "The valence band (Ev) spectrum recorded for GeOy, as shown image, indicates a shift of the Ev for GeOy toward higher ... | [
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Figure 6. Optical absorption as a function of the cation ratio, $x_{i}$ of a TGO and $(\hat{1})$ ZGO films deposited on fused silica. | sci_imageminer__atomic_layer_deposition__experimental_usecase__25__figure_6 | atomic-layer-deposition/experimental-usecase/25/figure_6 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The figure shows tauc plot for TGO at various GeOx concentrations."
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"summary": "The figure shows tauc plot for ZGO at various GeOx concentrations."
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"data": "| E (eV) | x = 0% | x = 6.5% | x = 7.7% | x = 10% | x = 16% | x = 30% |\n|--------|--------|----------|----------|---------|---------|---------|\n| 3.0 | 1000 | 800 | 700 | 600 | 500 | 200 |\n| 3.5 | 2500 | 2200 | 2100 | 1900 | 1700 |... | [
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"publication_title": "$\\mathsf{Sn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ and $\\mathsf{Zn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ by Atomic Layer Deposition—Growth Dynamics, Film Properties, and Compositional Tuning for Charge Selective Transport in $(\\mathsf{Ag},\\mathsf{Cu})(\\mathsf{In},\\mathsf{Ga})\\mathsf{Se... | {
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Figure 7. SEM micrographs of the $\mathrm{ZnO:Al / ZnO / ESL / ACIGS}$ stacks, where the ESL is (a) $\mathrm{ZnO}$ , (b) ZGO 0.12, (c) ZGO 0.33, (d) $\mathrm{SnO}_{y}$ , and (e) TGO 0.10. The scale bar represents $200~\mathrm{nm}$ in (a) and (b) and $100~\mathrm{nm}$ in (c)–(e). (f) Schematic illustration of th... | sci_imageminer__atomic_layer_deposition__experimental_usecase__25__figure_7 | atomic-layer-deposition/experimental-usecase/25/figure_7 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"publication_title": "$\\mathsf{Sn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ and $\\mathsf{Zn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ by Atomic Layer Deposition—Growth Dynamics, Film Properties, and Compositional Tuning for Charge Selective Transport in $(\\mathsf{Ag},\\mathsf{Cu})(\\mathsf{In},\\mathsf{Ga})\\mathsf{Se... | {
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Figure 8. Schematic illustration of the roughly estimated $E_{c}$ and $E_{v}$ trends as a function of the cation ratio, $x_{i}$ of a TGO and b ZGO. The estimations are based on the optical absorption and the XPS $E_{v}$ spectra from this study and from the $\mathrm{SnO}_{y} / \mathrm{CIGS}$ , and $\mathrm{ZnO... | sci_imageminer__atomic_layer_deposition__experimental_usecase__25__figure_8 | atomic-layer-deposition/experimental-usecase/25/figure_8 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 9. $JV$ sweeps of representative solar cells using (a) TGO and (b) ZGO ESLs. | sci_imageminer__atomic_layer_deposition__experimental_usecase__25__figure_9 | atomic-layer-deposition/experimental-usecase/25/figure_9 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"publication_title": "$\\mathsf{Sn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ and $\\mathsf{Zn}_{1 - x}\\mathsf{Ge}_x\\mathsf{O}_y$ by Atomic Layer Deposition—Growth Dynamics, Film Properties, and Compositional Tuning for Charge Selective Transport in $(\\mathsf{Ag},\\mathsf{Cu})(\\mathsf{In},\\mathsf{Ga})\\mathsf{Se... | {
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Figure 1. ALD growth rates for $\mathrm{In}_2\mathrm{O}_3$ $(\Delta)$ $\mathrm{SnO_2}$ $(\Omega)$ and ITO $(\bullet)$ versus deposition temperature. Potential ALD window for ITO growth is indicated. | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_1 | atomic-layer-deposition/experimental-usecase/26/figure_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The multiple line chart compares the growth rate per cycle of Tin Oxide, Indium Oxide, and ITO films as a function of deposition temperature. Both Tin and Indium Oxide show a general increase in growth rate with temperature, while ITO exhibits a stable region between ~200 - 30... | [
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"data": "| Deposition Temperature (°C) | Tin Oxide (Å/Cycle) | Indium Oxide (Å/Cycle) | ITO (Å/Cycle) |\n|-----------------------------|--------------------|-------------------------|---------------|\n| 100 | 0.5 | 1.2 | 1.3 ... | [
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Figure 10. X-ray diffraction profile measured for ALD ITO film deposited on glass using 1000 cycles with $5\%$ $\mathrm{SnO_2}$ cycles at $275^{\circ}C$ . The indices and peak positions are taken from PDF No. 00-006-0416 for cubic $\mathrm{In}_2\mathrm{O}_3$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_10 | atomic-layer-deposition/experimental-usecase/26/figure_10 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The spectra chart shows an X-ray diffraction (XRD) pattern with intensity (in counts per second) plotted against 2Theta angle (in degrees). Multiple peaks corresponding to crystal planes such as (211), (222), (400), and (440) are observed, indicating a crystalline phase."
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Figure 11. AFM image for $89\mathrm{-nm}$ ALD ITO film deposited on Si-100 at $275^{\circ}C$ using 600 cycles with $5\%$ $\mathrm{SnO_2}$ cycles. | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_11 | atomic-layer-deposition/experimental-usecase/26/figure_11 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 12. SEM plan-view (a) and cross-sectional (b) images of ALD ITO film deposited on Si(100) using 600 cycles with $5\%$ $\mathrm{SnO_2}$ cycles at $275^{\circ}C$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_12 | atomic-layer-deposition/experimental-usecase/26/figure_12 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 13. (a) Cross-sectional SEM image of AAO membrane coated conformally with $9.7\mathrm{-nm}$ ALD ITO film, and also with $161\mathrm{-nm}$ ALD ITO film deposited selectively on the AAO front surface visible on the left side of the image. (b) Higher-resolution SEM image of AAO membrane showing that the $20\ma... | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_13 | atomic-layer-deposition/experimental-usecase/26/figure_13 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 2. Growth rate for ALD ITO versus percentage of $\mathrm{SnO_2}$ cycles determined using VASE $(\bullet)$ and XRF $(\nabla)$ . Solid line guides the eye, and dashed line shows expected growth rates calculated using a rule-of-mixtures formula. | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_2 | atomic-layer-deposition/experimental-usecase/26/figure_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The line chart shows the variation in growth rate (in Å/cycle) as a function of SnO₂ cycle percentage. Measurements from ellipsometry and XRF are plotted, along with a dashed line representing the rule of mixtures. Both techniques show a decreasing trend in growth rate with in... | [
{
"panel_id": "a",
"data": "| % SnO₂ Cycles | Ellipsometry (Å/cycle) | XRF (Å/cycle) |\n|---------------|-------------------------|----------------|\n| 0 | 1.75 | 1.60 |\n| 1 | 1.45 | 1.40 |\n| 2 | 1.35 ... | [
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"answer": "The growth rate decreases steadily as the % SnO₂ cycles increases, for both ellipsometry and XRF measurements, with ellipsom... | [
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Figure 3. $\mathrm{SnO_2}$ content versus percentage of $\mathrm{SnO_2}$ cycles for ALD ITO films determined by XRF. Dashed line shows expected $\mathrm{SnO_2}$ content as calculated using a rule-of-mixtures formula. | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_3 | atomic-layer-deposition/experimental-usecase/26/figure_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
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"panel_id": "a",
"summary": "The line chart shows the increase in SnO₂ content (mol %) as a function of SnO₂ cycle percentage, as measured by XRF. A dashed line indicates the expected values from the Rule of Mixtures. The measured data rises faster than predicted, suggesting non-linear incorporation."
}... | [
{
"panel_id": "a",
"data": "| % SnO₂ Cycles | SnO₂ Content (mol %) |\n|---------------|----------------------|\n| 0 | 0 |\n| 5 | 2 |\n| 10 | 12 |\n| 15 | 26 |\n| 25 | 40 ... | [
{
"panel_id": "a",
"question_type": "Comparative/Trend",
"question": "How does the measured SnO₂ content compare to the Rule of Mixtures prediction?",
"answer_type": "Paragraph",
"answer": "The measured SnO₂ content increases faster than the Rule of Mixtures prediction, indicating a non-linear t... | [
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/26/images/figure_... | train/atomic-layer-deposition/experimental-usecase/26/images/figure_3.jpg | train/atomic-layer-deposition/experimental-usecase/26/images/figure_3.json | train/atomic-layer-deposition/experimental-usecase/26/content.json | Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors | Jeffrey W. Elam,\*,† David A. Baker,† Alex B. F. Martinson,†,‡ Michael J. Pellin,† and Joseph T. Hupp‡ | null | null | 2,007 | Jeffrey W. Elam et al.pdf | figure_3 | 572 | 570 | JPEG | 62decce0f40a7ba517118b3cdd5a7bfc0108d6a4ac540d5e0780c6677e11c62b | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Figure 4. Growth rate versus ALD cycles measured using in situ QCM during ITO growth using $10\%$ $\mathrm{SnO_2}$ cycles. | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_4 | atomic-layer-deposition/experimental-usecase/26/figure_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The line chart shows the growth rate (Å/cycle) of SnO₂ and In₂O₃ as a function of ALD cycles. The SnO₂ growth rate exhibits periodic dips, while the In₂O₃ growth remains relatively steady with minor fluctuations."
}
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{
"panel_id": "a",
"data": "| ALD Cycles | SnO₂ | In₂O₃ |\n|---|---|---|\n| 0 | 1.15 | 1.15 |\n| 5 | 1.20 | 1.20 |\n| 10 | 1.10 | 1.10 |\n| 15 | 1.25 | 1.25 |\n| 20 | 1.30 | 1.30 |\n| 25 | 1.20 | 1.20 |\n| 30 | 1.10 | 1.10 |\n| 35 | 1.25 | 1.25 |\n| 40 | 1.30 | 1.30 |"
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"answer": "SnO₂ shows sharp dips at regular intervals, suggesting a periodic change, while In₂O₃ growth rate remains rela... | [
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Figure 5. In situ QMS measurements for (a) $m = 66$ from cyclopentadiene and (b) $m = 48$ from ozone, measured during ITO ALD using $5\%$ $\mathrm{SnO_2}$ cycles. The application of the $\mathrm{SnO_2}$ ALD cycles is indicated. | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_5 | atomic-layer-deposition/experimental-usecase/26/figure_5 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 6. Thickness of ALD ITO films versus number of cycles determined using VASE for films deposited on Si(100) at $275^{\circ}C$ using $5\%$ $\mathrm{SnO_2}$ cycles. | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_6 | atomic-layer-deposition/experimental-usecase/26/figure_6 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 7. (a) Resistivity versus percentage of $\mathrm{SnO_2}$ cycles measured using four-point probe for ALD ITO films prepared on glass at $275^{\circ}C$ using 300 cycles. (b) Hall probe measurements of the same ITO films showing carrier concentration and mobility. | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_7 | atomic-layer-deposition/experimental-usecase/26/figure_7 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The multi-axis chart indicates that carrier concentration increases significantly with SnO₂ cycles, w... | [
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Figure 8. Resistivity of ALD ITO films prepared on glass using $5\%$ $\mathrm{SnO_2}$ cycles measured by four-point probe versus (a) number of cycles at $275^{\circ}C$ and (b) deposition temperature using 300 cycles. | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_8 | atomic-layer-deposition/experimental-usecase/26/figure_8 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 9. Optical transmittance for ALD ITO films prepared on glass using 300 ALD cycles with $5\%$ $\mathrm{SnO_2}$ cycles versus deposition temperature. Optical transmittance is given as the average transmission over the wavelength range $370 - 1000\mathrm{nm}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__26__figure_9 | atomic-layer-deposition/experimental-usecase/26/figure_9 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Fig. 1. Growth rate and resistivity of TiN films deposited by remote PEALD technique using TDMAT precursor and nitrogen plasma as a function of deposition temperature. Inset of this figure shows the film thickness as a function of process cycles. | sci_imageminer__atomic_layer_deposition__experimental_usecase__27__fig_1 | atomic-layer-deposition/experimental-usecase/27/fig_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"data": "| Deposition Temperature (°C) | Thickness (nm) | Resistivity (Ω·cm) |\n|---|---|---|\n| 175 | 15 | 500 |\n| 200 | 19 | 450 |\n| 250 | 19 | 350 |\n| 300 | 19 | 400 |\n| 350 | 25 | 500 |"
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Fig. 2. AES depth profile (a) and impurity contents (b) of TiN films deposited by remote PEALD method using TDMAT precursor and nitrogen plasma. | sci_imageminer__atomic_layer_deposition__experimental_usecase__27__fig_2 | atomic-layer-deposition/experimental-usecase/27/fig_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"data": "| Sputter Time (min) | C | O | O of SiO₂ | Ti | N | Si |\n|---|---|---|---|---|---|---|\n| 0 | 4 | 6 | 0 | 39 | 53 | 0 |\n| 5 | 4 | 5 | 0 | 37 | 53 | 0 |\n| 10 | 4 | 5 | 0 | 36 | 50 | 5 |\n| 15 | 4 | 3 | 0 | 35 | 45 | 10 |\n| 20 | 4 | 0 | 10 | 30 | 40 | 20 |\n| 25 | 3 | 0 | 25 | ... | [
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Fig. 3. High-resolution XPS spectrum of carbon in TiN film deposited by remote PEALD method using TDMAT precursor and nitrogen plasma at $250^{\circ}\mathrm{C}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__27__fig_3 | atomic-layer-deposition/experimental-usecase/27/fig_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Fig. 4. XTEM image of TiN film deposited by remote PEALD method on contact hole approximately $0.25\mu \mathrm{m}$ wide and $2.5\mu \mathrm{m}$ deep. | sci_imageminer__atomic_layer_deposition__experimental_usecase__27__fig_4 | atomic-layer-deposition/experimental-usecase/27/fig_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 1. (a) Conventional ALD sequence and (b) ALD sequence with DFM for the deposition of GeSe films. | sci_imageminer__atomic_layer_deposition__experimental_usecase__28__figure_1 | atomic-layer-deposition/experimental-usecase/28/figure_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 10. (a) Schematic of the set-up for TS measurement. (b) Structure of the GeSe selector device. | sci_imageminer__atomic_layer_deposition__experimental_usecase__28__figure_10 | atomic-layer-deposition/experimental-usecase/28/figure_10 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 11. Time-resolved TS behavior of the GeSe selector devices through fabrication using (a) the conventional ALD process and (b) the ALD-DFM process. Magnified view of the transition region in (b) to the (c) ON-state and (d) OFF-state. | sci_imageminer__atomic_layer_deposition__experimental_usecase__28__figure_11 | atomic-layer-deposition/experimental-usecase/28/figure_11 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 12. Experimental and simulated $I - V$ curves of the OTS device. (a) $I - V$ characteristics by plotting $I_{\mathrm{DUT}} - V_{\mathrm{DUT}}$ . (b) $I - V$ characteristics for the $I_{\mathrm{off}}$ region by voltage sweep. Both experiments were performed using devices fabricated via the ALD-DFM proces... | sci_imageminer__atomic_layer_deposition__experimental_usecase__28__figure_12 | atomic-layer-deposition/experimental-usecase/28/figure_12 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 2. (a) Proposed deposition mechanism of GeSe films from $\mathrm{HGeCl}_3$ and $\mathrm{GeCl}_2$ with $\mathrm{HCl}$ on the film surface. (b)-(e) Saturation behavior in the conventional ALD through the Ge and Se precursors' pulse and purge time split. | sci_imageminer__atomic_layer_deposition__experimental_usecase__28__figure_2 | atomic-layer-deposition/experimental-usecase/28/figure_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 3. (a) Growth rates of the GeSe films grown via the ALD-DFM and conventional ALD process. (b) Growth rates according to the pulse pressure adjusted through the metering valve. (c) Model for the film growth during the ALD-DFM process for the efficient removal of the physisorbed molecules. | sci_imageminer__atomic_layer_deposition__experimental_usecase__28__figure_3 | atomic-layer-deposition/experimental-usecase/28/figure_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 4. (a) Layer densities versus cycle number to confirm the saturation growth rate without an incubation cycle. (b) Effect of the substrate temperature on the growth rate. | sci_imageminer__atomic_layer_deposition__experimental_usecase__28__figure_4 | atomic-layer-deposition/experimental-usecase/28/figure_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 5. SEM (top) and AFM (bottom) images of the samples grown through (a), (c) the conventional ALD process and (b), (d) the ALD-DFM process on a $\mathrm{SiO}_2$ substrate. | sci_imageminer__atomic_layer_deposition__experimental_usecase__28__figure_5 | atomic-layer-deposition/experimental-usecase/28/figure_5 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 6. XRR result (top) and AES analysis (bottom) for the films grown through (a), (c) the conventional ALD process and (b), (d) the ALD-DFM process. | sci_imageminer__atomic_layer_deposition__experimental_usecase__28__figure_6 | atomic-layer-deposition/experimental-usecase/28/figure_6 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 7. XPS results of the films grown through (a), (c) the conventional ALD process and (b), (d) the ALD-DFM process. | sci_imageminer__atomic_layer_deposition__experimental_usecase__28__figure_7 | atomic-layer-deposition/experimental-usecase/28/figure_7 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 8. TEM images (left) and associated FFT analysis (right) of the samples grown through (a) the conventional ALD process and (b) the ALD-DFM process. | sci_imageminer__atomic_layer_deposition__experimental_usecase__28__figure_8 | atomic-layer-deposition/experimental-usecase/28/figure_8 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 9. Resistivity-temperature experiments (top) and GAXRD patterns (bottom) of the as-deposited and annealed GeSe films grown through (a), (c) the conventional ALD process and (b), (d) the ALD-DFM process to verify the crystallization temperature. | sci_imageminer__atomic_layer_deposition__experimental_usecase__28__figure_9 | atomic-layer-deposition/experimental-usecase/28/figure_9 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 1. Experimental schematic of vacuum chamber for transmission FTIR studies on high surface area samples. $\mathrm{SiO}_2$ particles with a surface area of $380\mathrm{m}^2 /\mathrm{g}$ are pressed into a tungsten grid and positioned in the infrared beam. | sci_imageminer__atomic_layer_deposition__experimental_usecase__29__figure_1 | atomic-layer-deposition/experimental-usecase/29/figure_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 10. AFM image of a $350\mathrm{\AA}$ thick tungsten nitride film deposited at $600~\mathrm{K}$ after $140\mathrm{AB}$ cycles on a $125\mathrm{\AA}$ thick $\mathrm{SiO_2}$ film on $\mathrm{Si}(100)$ . The reactant exposures of $12,000\mathrm{L}\mathrm{NH_3}$ and $4300\mathrm{L}\mathrm{WE_2}$ were s... | sci_imageminer__atomic_layer_deposition__experimental_usecase__29__figure_10 | atomic-layer-deposition/experimental-usecase/29/figure_10 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 2. Experimental schematic of vacuum apparatus for in situ spectroscopic ellipsometry studies on Si(100) samples. This apparatus contains a sample load lock, a central deposition chamber equipped with the spectroscopic ellipsometer, and a surface analysis chamber. | sci_imageminer__atomic_layer_deposition__experimental_usecase__29__figure_2 | atomic-layer-deposition/experimental-usecase/29/figure_2 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 3. FTIR difference spectra in the $\mathrm{N - H}_y$ stretch, $\mathrm{N - H}_y$ bend, and $\mathrm{W - F}_x$ stretch regions recorded after various $\mathrm{NH}_3$ exposures during the $\mathrm{NH}_3$ half-reaction at $600~\mathrm{K}$ . Each difference spectrum is referenced to a surface that had ear... | sci_imageminer__atomic_layer_deposition__experimental_usecase__29__figure_3 | atomic-layer-deposition/experimental-usecase/29/figure_3 | train | materials_science | atomic_layer_deposition | null | experimental | [
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Figure 4. FTIR difference spectra in the $\mathrm{N - H}_y$ stretch, $\mathrm{N - H}_y$ bend, and $\mathrm{W - F}_x$ stretch regions recorded after various $\mathrm{WF}_6$ exposures during the $\mathrm{WF}_6$ half-reaction at $600~\mathrm{K}$ . Each difference spectrum is referenced to a tungsten nitride sur... | sci_imageminer__atomic_layer_deposition__experimental_usecase__29__figure_4 | atomic-layer-deposition/experimental-usecase/29/figure_4 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"data": "| Sample | Frequency (cm⁻¹) |\n|---|---|\n| 10 mTorr, 1 min | |\n| 100 mTorr, 1 min | Peaks at 3290, 3350, 3435 |\n| 1 Torr, 1 min | Peaks at 3290, 3350, 3435, 3515 |\n| 10 Torr, 30 min | Peaks at 3290, 3350, 3435, 3515 |"
},
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"data": "| Sample | Fr... | [
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"question": "Which surface species is identified as dominant during the NH₃ half-reaction, and how is it detected?",
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"answer": "The dominant surface species is NH₂*, detected through N–H₂ stretching vibrations at ~... | [
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Figure 5. Normalized integrated absorbances for the $\mathrm{W - F}_x$ stretching mode $(\sim 680~\mathrm{cm}^{-1})$ and the $\mathrm{N - H}_2$ stretching mode $(\sim 3400~\mathrm{cm}^{-1})$ vs. reactant exposure during the (a) $\mathrm{NH}_3$ and (b) $\mathrm{WF}_6$ half-reactions at $600~\mathrm{K}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__29__figure_5 | atomic-layer-deposition/experimental-usecase/29/figure_5 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
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"panel_id": "a",
"summary": "The normalized integrated absorbance of N-H₂ Stretch and W-Fₓ Stretch against NH3 exposure at T = 600 K."
},
{
"panel_id": "b",
"summary": "The normalized integrated absorbance of N-H₂ Stretch and W-Fₓ Stretch against WF6 exposure at T = 600 K."
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] | [
{
"panel_id": "a",
"data": "| Reactant Exposure (Torr min) | N-H₂ Stretch | W-Fₓ Stretch |\n|---|---|---|\n| 0 | 0.0 | 0.0 |\n| 10⁻³ | 0.1 | 0.9 |\n| 10⁻² | 0.2 | 0.8 |\n| 10⁻¹ | 0.3 | 0.7 |\n| 1 | 0.4 | 0.6 |\n| 10 | 0.5 | 0.5 |\n| 10² | 0.6 | 0.4 |\n| 10³ | 0.7 | 0.3 |"
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Figure 6. Ellipsometric measurements of the tungsten nitride film thickness deposited by three AB cycles vs. $\mathrm{NH}_3$ exposure at $600~\mathrm{K}$ . A $\mathrm{WF}_6$ exposure of $4300~\mathrm{L}$ was sufficient for a complete $\mathrm{WF}_6$ half- reaction at $600~\mathrm{K}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__29__figure_6 | atomic-layer-deposition/experimental-usecase/29/figure_6 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
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"panel_id": "a",
"summary": "The graph shows the relationship between NH₃ exposure and film thickness at 600 K with 3 AB cycles. The film thickness increases rapidly initially and then plateaus."
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"panel_id": "a",
"data": "| NH₃ Exposure (L) | Film Thickness (Å) |\n|---|---|\n| 0 | 0 |\n| 1000 | 1 |\n| 2000 | 2 |\n| 3000 | 3 |\n| 4000 | 4 |\n| 5000 | 6 |\n| 6000 | 7 |\n| 7000 | 8 |\n| 8000 | 8 |\n| 9000 | 8 |\n| 10000 | 8 |\n| 11000 | 8 |\n| 12000 | 8 |\n| 13000 | 8 |\n| 14000 | 8 |\n| 15000 | 8 |\... | [
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"publication_title": "You may also like",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/29/images/figure_... | train/atomic-layer-deposition/experimental-usecase/29/images/figure_6.jpg | train/atomic-layer-deposition/experimental-usecase/29/images/figure_6.json | train/atomic-layer-deposition/experimental-usecase/29/content.json | You may also like | Atomic Layer Deposition of Tungsten Nitride Films Using Sequential Surface Reactions | null | null | 2,000 | J. W. Klaus et al.pdf | figure_6 | 666 | 647 | JPEG | fc4c5da4324f2b2514ab11de50dded83c92060fa1377bf652550e43fc3d06299 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 | |
Figure 7. Ellipsometric measurements of the tungsten nitride film thickness deposited by three AB cycles vs. $\mathrm{WF}_6$ exposure at $600~\mathrm{K}$ . A $\mathrm{NH}_3$ exposure of $12,000~\mathrm{L}$ was sufficient for a complete $\mathrm{NH}_3$ half- reaction at $600~\mathrm{K}$ . | sci_imageminer__atomic_layer_deposition__experimental_usecase__29__figure_7 | atomic-layer-deposition/experimental-usecase/29/figure_7 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
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{
"panel_id": "a",
"summary": "The line chart shows the relationship between the exposure of WF₆ and film thickness at 3 AB cycles and a temperature of 600 K."
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{
"panel_id": "a",
"data": "| WF₆ Exposure (L) | Film Thickness (Å) |\n|---|---|\n| 0 | 0 |\n| 1000 | 1 |\n| 2000 | 2 |\n| 3000 | 3 |\n| 6000 | 8 |\n| 12000 | 8 |"
}
] | [
{
"panel_id": "a",
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"question": "What was the NH3 exposure during this experiment?",
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{
"panel_id": "a",
"question_type": "Process-Oriented",
"question": "What is the film thickness around 1,000... | [
{
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"publication_title": "You may also like",
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Figure 8. Tungsten nitride film thickness measured by ellipsometry vs. number of AB cycles at $600~\mathrm{K}$ . The $\mathrm{NH_3}$ exposure of $12,000\mathrm{L}$ and $\mathrm{WF_6}$ exposure of $4300\mathrm{L}$ were sufficient for complete half-reactions during each AB cycle. | sci_imageminer__atomic_layer_deposition__experimental_usecase__29__figure_8 | atomic-layer-deposition/experimental-usecase/29/figure_8 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
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{
"panel_id": "a",
"summary": "The line chart shows a linear relationship between the number of AB cycles and film thickness, indicating a linear growth rate."
}
] | [
{
"panel_id": "a",
"data": "| AB Cycles | Film Thickness (Å) |\n|---|---|\n| 3 | 7.5 |\n| 6 | 15 |\n| 12 | 30.5 |\n| 19 | 48.5 |\n| 25 | 64 |\n| 32 | 81.5 |\n| 48 | 122.4 |"
}
] | [
{
"panel_id": "a",
"question_type": "Process-Oriented",
"question": "What is the film thickness after about 30 ALD cycles?",
"answer_type": "Factoid",
"answer": "75 Å."
},
{
"panel_id": "a",
"question_type": "Process-Oriented",
"question": "What is the NH3 exposure for this exper... | [
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Figure 9. Ellipsometric measurements of the tungsten nitride film thickness deposited by three AB cycles at various substrate temperatures. Reactant exposures were sufficient for complete half-reactions at each temperature. | sci_imageminer__atomic_layer_deposition__experimental_usecase__29__figure_9 | atomic-layer-deposition/experimental-usecase/29/figure_9 | train | materials_science | atomic_layer_deposition | null | experimental | [
{
"panel_id": "a",
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{
"panel_id": "a",
"summary": "The line chart illustrates the relationship between film thickness and temperature, showing an increase up to 600 K followed by a plateau."
}
] | [
{
"panel_id": "a",
"data": "| Temperature (K) | Film Thickness (Å) |\n|---|---|\n| 400 | 0.5 |\n| 500 | 3.5 |\n| 550 | 7.0 |\n| 600 | 7.75 |\n| 650 | 8.0 |\n| 700 | 7.75 |\n| 750 | 8.0 |\n| 800 | 8.0 |"
}
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{
"panel_id": "a",
"question_type": "Comparative/Trend",
"question": "How does the tungsten nitride film thickness deposited by three AB cycles change between 400 K and 600 K?",
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"answer": "It increases rapidly with increasing substrate temperature."
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null | sci_imageminer__atomic_layer_deposition__experimental_usecase__30__1b78016cb355e70dc8f9df6a158ffa618b7d7b3846cf68bd31bde9dd7bfc1aaf | atomic-layer-deposition/experimental-usecase/30/1b78016cb355e70dc8f9df6a158ffa618b7d7b3846cf68bd31bde9dd7bfc1aaf | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The image shows a microscopic view of a sample tested under the 'Face-to-Face Setup'."
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"question": "Is the process that is performed uniform?",
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"answer": "Not every location on the setup has the same color indicating that there is non-uniformity."
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"publication_title": "Structural and Magnetic Studies on Iron Oxide and Iron-Magnesium Oxide Thin Films Deposited Using Ferrocene and (Dimethylaminomethyl)ferrocene Precursors",
"authors": "To cite this article: Kaupo Kukli et al 2013 ECS J. Solid State Sci. Technol. 2 N45",
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Figure 1. Grazing incidence $\mathbf{X}$ -ray diffraction patterns of iron oxide films grown at 500 and $400^{\circ}\mathrm{C}$ from $\mathrm{Fe(C_5H_5)_2}$ (top and middle panels, respectively) and at $375^{\circ}C$ from $\mathrm{CpFeC_5H_4CHN(CH_3)_2}$ (bottom panel), Miller indexes are given for the peaks ... | sci_imageminer__atomic_layer_deposition__experimental_usecase__30__figure_1 | atomic-layer-deposition/experimental-usecase/30/figure_1 | train | materials_science | atomic_layer_deposition | null | experimental | [
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"summary": "The spectra chart shows X-ray diffraction patterns of iron oxide films grown at 500 °C. Strong hematite (Fe₂O₃) peaks are observed, with additional weaker magnetite (Fe₃O₄) reflections, indicating mixed-phase crystallinity at higher growth temperature."
},
{
"panel_id"... | [
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"panel_id": "a",
"data": "| 2θ (degree) | Relative intensity | Phase |\n|-------------|--------------------|---------------------|\n| ~24.2 | High | Fe₂O₃ (hematite) |\n| ~33.2 | High | Fe₂O₃ (hematite) |\n| ~35.6 | Medium | Fe₃O... | [
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"publication_title": "Structural and Magnetic Studies on Iron Oxide and Iron-Magnesium Oxide Thin Films Deposited Using Ferrocene and (Dimethylaminomethyl)ferrocene Precursors",
"authors": "To cite this article: Kaupo Kukli et al 2013 ECS J. Solid State Sci. Technol. 2 N45",
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"source_image_path": "train/atomic-layer-deposition/experimental-usecase/30/images/figure_... | train/atomic-layer-deposition/experimental-usecase/30/images/figure_1.jpg | train/atomic-layer-deposition/experimental-usecase/30/images/figure_1.json | train/atomic-layer-deposition/experimental-usecase/30/content.json | Structural and Magnetic Studies on Iron Oxide and Iron-Magnesium Oxide Thin Films Deposited Using Ferrocene and (Dimethylaminomethyl)ferrocene Precursors | To cite this article: Kaupo Kukli et al 2013 ECS J. Solid State Sci. Technol. 2 N45 | null | null | 2,013 | Kaupo Kukli et al.pdf | figure_1 | 500 | 1,166 | JPEG | 0a11d67225fc3848ff0824ec653ad62b1a31ced6c6cd0d65748c84da2ee540d9 | null | null | CC BY 4.0 | source_publisher_rights_reserved | non_commercial_research_use_only | 1.0.0 |
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