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2002-07-05
On the two-dimensional metallic state in silicon-on-insulator structures
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility versus density, the strong drop in resistivity and the critical concentration for the metal-insulator transition are all consistent. On the basis of our SOI data for the temperature and in-plane magnetic field dependence of the resistivity, we discuss several models for the metallic state in two dimensions. We find that the observed behavior can be well described by the theory on the interaction corrections in the ballistic regime. For the investigated regime, the temperature dependent screening of scattering potentials gives also a good description of the data.
0207170v1
2003-01-21
Angular dependence of domain wall resistivity in SrRuO$_{\bf 3}$ films
${\rm SrRuO_3}$ is a 4d itinerant ferromagnet (T$_{c}$ $\sim $150 K) with stripe domain structure. Using high-quality thin films of SrRuO$_{3}$ we study the resistivity induced by its very narrow ($\sim 3$ nm) Bloch domain walls, $\rho_{DW}$ (DWR), at temperatures between 2 K and T$_{c}$ as a function of the angle, $\theta $, between the electric current and the ferromagnetic domains walls. We find that $\rho_{DW}(T,\theta)=\sin^2\theta \rho_{DW}(T,90)+B(\theta)\rho_{DW}(T,0)$ which provides the first experimental indication that the angular dependence of spin accumulation contribution to DWR is $\sin^2\theta$. We expect magnetic multilayers to exhibit a similar behavior.
0301400v2
2003-04-30
Radiation-induced magnetoresistance oscillation in a two-dimensional electron gas in Faraday geometry
Microwave-radiation induced giant magnetoresistance oscillations recently discovered in high-mobility two-dimensional electron systems in a magnetic field, are analyzed theoretically. Multiphoton-assisted impurity scatterings are shown to be the primary origin of the oscillation. Based on a model which considers the interaction of electrons with the electromagnetic fields in Faraday geometry, we are able not only to reproduce the correct period, phase and the negative resistivity of the main oscillation, but also to obtain secondary peaks and additional maxima and minima in the resistivity curve, some of which were already observed in the experiments.
0304687v2
2003-06-03
Signatures of valence fluctuations in CeCu2Si2 under high pressure
Simultaneous resistivity and a.c.-specific heat measurements have been performed under pressure on single crystalline CeCu2Si2 to over 6 GPa in a hydrostatic helium pressure medium. A series of anomalies were observed around the pressure coinciding with a maximum in the superconducting critical temperature, $T_c^{max}$. These anomalies can be linked with an abrupt change of the Ce valence, and suggest a second quantum critical point at a pressure $P_v \simeq 4.5$ GPa, where critical valence fluctuations provide the superconducting pairing mechanism, as opposed to spin fluctuations at ambient pressure. Such a valence instability, and associated superconductivity, is predicted by an extended Anderson lattice model with Coulomb repulsion between the conduction and f-electrons. We explain the T-linear resistivity found at $P_v$ in this picture, while other anomalies found around $P_v$ can be qualitatively understood using the same model.
0306054v1
2003-06-09
Thermal fluctuations in ultrasmall intrinsic Josephson junctions
Current-voltage curves of small area hysteretic intrinsic Josephson junctions, for which the Josephson energy $E_J=\hbar J_c/2e$ is of order of thermal energy $kT$, are investigated. A non-monotonic temperature dependence of the switching current is observed and explained by thermal phase fluctuations. At low temperatures premature switching from the superconducting into the resistive state is the most important effect of fluctuations. At high temperatures only a single resistive branch is observed. At the cross-over temperature a hysteretic phase-diffusion branch exists. It shows the importance of a frequency-dependent impedance of an external circuit formed by the leads.
0306212v1
2003-11-25
Comparative study of in situ and ex situ MgB2 films deposited by pulsed laser deposition
Two types of MgB2 films were prepared by pulsed laser deposition (PLD) with in situ and ex situ annealing processes respectively. Significant differences in properties between the two types of films were found. The ex situ MgB2 film has a Tc of 38.1K, while the in situ film has a depressed Tc of 34.5K. The resistivity at 40K for the in situ film is larger than that of the ex situ film by a factor of 6. The residual resistivity ratios (RRR) are 1.1 and 2.1 for the in situ and ex situ films respectively. The Jc-H curves of the in situ film show a much weaker field dependence than those of the ex situ film, attributable to stronger flux pinning in the in situ film. The small-grain feature and high oxygen level may be critical for the significant improvement of Jc in the in situ annealed MgB2 film.
0311556v1
2004-02-12
Self-localization of holes in a lightly doped Mott insulator
We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel self-localization of charge carriers. Interesting transport and dielectric properties are found as the consequences, including large doping-dependent thermopower and dielectric constant, low-temperature variable-range-hopping resistivity, as well as high-temperature strange-metal-like resistivity, which are consistent with experimental measurements in the high-T$_c$ cuprates. Disorder and impurities only play a minor and assistant role here.
0402327v2
2004-03-09
Resistivity and Thermopower of Ni2.19Mn0.81Ga
In this paper, we report results of the first studies on the thermoelectric power (TEP) of the magnetic heusler alloy Ni$_{2.19}$Mn$_{0.81}$Ga. We explain the observed temperature dependence of the TEP in terms of the crystal field (CF) splitting and compare the observed behavior to that of the stoichiometric system Ni$_2$MnGa. The resistivity as a function of temperature of the two systems serves to define the structural transition temperature, T$_M$, which is the transition from the high temperature austenitic phase to low temperatures the martensitic phase. Occurrence of magnetic (Curie-Weiss) and the martensitic transition at almost the same temperature in Ni$_{2.19}$Mn$_{0.81}$Ga has been explained from TEP to be due to changes in the density of states (DOS) at the Fermi level.
0403232v2
2004-07-21
YbNiSi3: a new antiferromagnetic Kondo lattice with strong exchange interaction
We report on the structural, thermodynamic and transport properties of high-quality single crystals of YbNiSi3 grown by the flux method. This compound crystallizes in the SmNiGe3 layered structure type of the Cmmm space group. The general physical behavior is that of a Kondo lattice showing an antiferromagnetic ground state below T_N = 5.1 K. This is among the highest ordering temperatures for a Yb-based intermetallic, indicating strong exchange interaction between the Yb ions, which are close to +3 valency based on the effective moment of 4.45 mu_B/f.u. The compound has moderately heavy-electron behavior with Sommerfeld coefficient 190 mJ/mol K^2. Resistivity is highly anisotropic and exhibits the signature logarithmic increase below a local minimum, followed by a sharp decrease in the coherent/magnetically ordered state, resulting in residual resistivity of 1.5 micro Ohm cm and RRR = 40. Fermi-liquid behavior consistent with a ground-state doublet is clearly observed below 1 K.
0407543v1
2004-09-05
Infrared study of giant dielectric constant in Li and Ti doped NiO
We have measured optical reflectivity of Li and Ti doped NiO (LTNO) in the infrared range at various temperatures. A Drude-like absorption is found at low energy, $\omega <$ 100 cm$^{-1}$ and its spectral weight increases substantially as temperature decreases. This observation and DC-resistivity result show that LTNO has a conductive grain and resistive boundary. Such composite structure provides evidence of the Maxwell-Wagner (MW) mechanism as the origin of the high dielectric constant $\epsilon_{o}$. We propose a three-phase granular structure and show that this extended MW model explains the observed frequency and temperature dependence of the dielectric constant as well as the giant value of $\epsilon_{o}$.
0409105v1
2004-09-09
Anomalous Pressure Dependence of Kadowaki-Woods ratio and Crystal Field Effects in Mixed-valence YbInCu4
The mixed-valence (MV) compound YbInCu4 was investigated by electrical resistivity and ac specific heat at low temperatures and high pressures. At atmospheric pressure, its Kadowaki-Woods (KW) ratio, A/\gamma ^2, is 16 times smaller than the universal value R_{KW}(=1.0 x 10^-5 \mu \Omega cm mol^2 K^2 mJ^-2), but sharply increases to 16.5R_{KW} at 27 kbar. The pressure-induced change in the KW ratio and deviation from R_{KW} are analyzed in terms of the change in f-orbital degeneracy N and carrier density n. This analysis is further supported by a dramatic change in residual resistivity \rho_0 near 25 kbar, where \rho_0 jumps by a factor of 7.
0409243v2
2004-10-01
Inherent Relation between Nernst Signal and Nodal Quasiparticle Transport in Pseudogap Region of Underdoped High Temperature Superconductors
In-plane Nernst signal and resistivity have been measured for three $La_{2-x}Sr_xCuO_4$ single crystals (x=0.09, 0.11 and 0.145) with the magnetic field parallel to c-axis. A quadratic temperature dependence of resistivity, i.e., $\rho=\rho_0+aT^2$ is observed below a certain temperature $T_R$. It is found that the upper boundary of the Nernst signal $T_n$ coincides with $T_R$, which points to an inherent relation between the anomalous Nernst signal and the nodal quasiparticle transport in the pseudogap region. Finally a phase diagram together with the pseudogap temperature $T^*$ is presented, which suggests a second energy scale in the pseudogap region.
0410013v2
2004-11-23
Magnetic field-tuned quantum critical point in CeAuSb_2
Transport, magnetic and thermal properties at high magnetic fields (H) and low temperatures (T) of the heavy fermion compound CeAuSb_2 are reported. At H=0 this layered system exhibits antiferromagnetic order below T_N = 6 K. Applying B along the inter-plane direction, leads to a continuous suppression of T_N and a quantum critical point at H_c ~ 5.4 T. Although it exhibits Fermi liquid behavior within the Neel phase, in the paramagnetic state the fluctuations associated with H_c give rise to unconventional behavior in the resistivity (sub-linear in T) and to a TlnT dependence in the magnetic contribution to the specific heat. For H > H_c and low T the electrical resistivity exhibits an unusual T^3-dependence.
0411588v2
2005-02-14
Superconductivity induced by spark erosion in ZrZn2
We show that the superconductivity observed recently in the weak itinerant ferromagnet ZrZn2 [C. Pfleiderer et al., Nature (London) 412, 58 (2001)] is due to remnants of a superconducting layer induced by spark erosion. Results of resistivity, susceptibility, specific heat and surface analysis measurements on high-quality ZrZn2 crystals show that cutting by spark erosion leaves a superconducting surface layer. The resistive superconducting transition is destroyed by chemically etching a layer of 5 microns from the sample. No signature of superconductivity is observed in rho(T) of etched samples at the lowest current density measured, J=675 Am-2, and at T < 45 mK. EDX analysis shows that spark-eroded surfaces are strongly Zn depleted. The simplest explanation of our results is that the superconductivity results from an alloy with higher Zr content than ZrZn2.
0502341v2
2005-04-05
Interaction and disorder in bilayer counterflow transport at filling factor one
We study high mobility, interacting GaAs bilayer hole systems exhibiting counterflow superfluid transport at total filling factor $\nu=1$. As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity ($\rho_{xy}$) decreases at a given temperature, while the counterflow longitudinal resistivity ($\rho_{xx}$), which is much larger than $\rho_{xy}$, hardly depends on density. On the other hand, a small imbalance in the layer densities can result in significant changes in $\rho_{xx}$ at $\nu=1$, while $\rho_{xy}$ remains vanishingly small. Our data suggest that the finite $\rho_{xx}$ at $\nu=1$ is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system.
0504119v1
2005-05-19
On the problem of the Kondo-lattice model application to CeB6
Precision measurements of charge transport parameters (resistivity, Hall and Seebeck coefficients) have been carried out on high-quality single-crystals of cerium hexaboride in a wide temperature range 1.8-300 K. It is shown that in the temperature interval of 5 K < T < T* = 80 K the magnetic contribution in resistivity obeys the power law rm = T -1/n, which corresponds to the regime of weak localization of charge carriers with the critical index 1/n = 0.39 +- 0.02. In the same temperature interval an asymptotic behavior of thermopower S = -lnT is found together with an essential decrease of the charge carriers mobility in CeB6. A negative Hall coefficient anomaly has been detected at liquid helium temperatures. The data obtained are compared with the results predicted by the Kondo-lattice model and discussed also in terms of the theory of excitonic ferromagnetism.
0505475v1
2005-06-15
Resistivity study of the pseudogap phase for (Hg,Re) - 1223 superconductors
The pseudogap phase above the critical temperature of high $T_{c}$ superconductors (HTSC) presents different energy scales and it is currently a matter of intense study. The complexity of the HTSC normal state requires very accurate measurements with the purpose of distinguishing different types of phenomena. Here we have performed systematically studies through electrical resistivity ($\rho$) measurements by several different current densities in order to obtain an optimal current for each sample. This approach allows to determine reliable values of the pseudogap temperature $T^{*}(n)$, the layer coupling temperature between the superconductor layers $T_{LD}(n)$, the fluctuation temperature $T_{scf}(n)$ and the critical temperature $T_{c}(n)$ as function of the doping $n$. The interpretation of these different temperature scales allows to characterize possible scenarios for the (Hg,Re) - 1223 normal state. This method, described in detail here, and used to derive the (Hg,Re)-1223 phase diagram is general and can be applied to any HTSC.
0506387v2
2005-08-29
Universal Minimum Heat Leak on Low-Temperature Metallic Electrical Leads
Low-temperature electronic systems require electrical leads which have low electrical resistance to provide bias current I without excessive voltage drop V. But proper cryogenic design also requires high thermal resistance to maintain a minimum heat leak Q from the hot temperature T[hot] to the cold temperature T[cold]. By the Wiedemann-Franz law, these requirements are in direct conflict, and the optimal configuration takes a particularly simple universal approximate form for the common case that T[cold] << T[hot]: Q/I = V = 3.6 kT[hot]/e. This is applied here to the cryopackaging of RSFQ superconducting circuits on a 4K cryocooler, but is equally applicable to other cryogenic systems such as a superconducting sensor array at low and ultra-low temperatures.
0508697v2
2005-09-01
Comment on "Magnetic quantum oscillations of the conductivity in layered conductors"
We discuss the recent theory of Gvozdikov [Phys. Rev. B 70, 085113 (2004)] which aims at explaining the Shubnikov-de Haas oscillations of the longitudinal resistivity \rho_zz observed in the quasi-two-dimensional organic compound \beta''-(BEDT-TTF)_2SF_5CH_2CF_2SO_3. We point out that the self-consistent equations of the theory yielding the longitudinal resistivity and the magnetic field dependence of the chemical potential have been incorrectly solved. We show that the consideration of the self-consistent Born approximation (which determines the relaxation rate in Gvozdikov's paper) leads in fact to the complete absence of the longitudinal conductivity \sigma_{zz} at leading order in high magnetic fields.
0509026v2
2005-10-14
Ferromagnetic Properties of ZrZn$_2$
The low Curie temperature (T_C approx 28K) and small ordered moment (M_0 approx 0.17 mu_B f.u.^-1) of ZrZn2 make it one of the few examples of a weak itinerant ferromagnet. We report results of susceptibility, magnetization, resistivity and specific heat measurements made on high-quality single crystals of ZrZn2. From magnetization scaling in the vicinity of T_C (0.001<|T-T_C|/T_C<0.08), we obtain the critical exponents beta=0.52+/-0.05 and delta=3.20+/-0.08, and T_C=27.50+/-0.05K. Low-temperature magnetization measurements show that the easy axis is [111]. Resistivity measurements reveal an anomaly at T_C and a non-Fermi liquid temperature dependence rho(T)=rho_0+AT^n, where n=1.67+/-0.02, for 1<T<14K. The specific heat measurements show a mean-field-like anomaly at T_C. We compare our results to various theoretical models.
0510384v1
2005-12-23
Spin-charge gauge symmetry: A way to tackle HTS cuprates?
We propose an explanation of several experimental features of transport phenomena in the normal state of high Tc cuprates in terms of a spin-charge gauge theory of the 2D t-J model. The calculated doping-temperature dependence for a number of physical quantities is found in qualitative agreement with data. In particular, we recover: in the ``pseudogap phase'' the metal-insulator crossover of the in-plane resistivity and of the NMR ``relaxation time'' and the insulating behavior of the out-of-plane resistivity; in the ``strange metal phase'' (at higher temperature or doping) the linear in T behavior of the above quantities; the appearance of maxima in the in-plane far-infrared conductivity in strongly underdoped and overdoped samples.
0512607v1
2006-02-01
Coulomb blockade and transport in a chain of one-dimensional quantum dots
A long one-dimensional wire with a finite density of strong random impurities is modelled as a chain of weakly coupled quantum dots. At low temperature T and applied voltage V its resistance is limited by "breaks": randomly occuring clusters of quantum dots with a special length distribution pattern that inhibits the transport. Due to the interplay of interaction and disorder effects the resistance can exhibit T and V dependences that can be approximated by power laws. The corresponding two exponents differ greatly from each other and depend not only on the intrinsic electronic parameters but also on the impurity distribution statistics.
0602008v3
2006-02-14
Intrinsic nonlinearity probed by intermodulation distortion microwave measurements on high quality MgB2 thin films
The two tone intermodulation distortion arising in MgB2 thin films synthesized by hybrid physical-chemical vapour deposition is studied in order to probe the influence of the two bands on the nonlinear response of this superconductor. The measurements are carried out by using a dielectrically loaded copper cavity operating at 7 GHz. Microwave data on samples having critical temperatures above 41 K, very low resistivity values, and residual resistivity ratio larger than 10, are shown. The dependence of the nonlinear surface losses and of the third order intermodulation products on the power feeding the cavity and on the temperature is analyzed. At low power, the signal arising from distortion versus temperature shows the intrinsic s-wave behavior expected for this compound. Data are compared with measurements performed on Nb and YBCO thin films using the same technique.
0602340v1
2006-02-21
Evidence of s-wave pairing symmetry in layered superconductor Li$_{0.68}$NbO$_2$ from the specific heat measurement
A high quality superconducting Li$_{0.68}$NbO$_2$ polycrystalline sample was synthesized by deintercalation of Li ions from Li$_{0.93}$NbO$_2$. The field dependent resistivity and specific heat were measured down to 0.5 K. The upper critical field $H_{c2} (T)$ is deduced from the resistivity data and $H_{c2}(0)$ is estimated to be $\sim 2.98$ T. A notable specific heat jump is observed at the superconducting transition temperature $T_c \sim 5.0$ K at zero field. Below $T_c$, the electronic specific heat shows a thermal activated behavior and agrees well with the theoretical result of the BCS s-wave superconductors. It indicates that the superconducting pairing in Li$_{0.68}$NbO$_2$ has s-wave symmetry.
0602476v1
2006-03-29
Resistivity and Magneto-Optical Evidence for Variable and Incomplete Connectivity in Dense, High Critical Current Density C-alloyed Magnesium Diboride
Carbon-doped magnesium diboride was fabricated from pre-reacted pure MgB2 by mechanical alloying. The sample set had excellent critical current densities Jc(8T,4.2K) ranging from 15-60 kA/cm2, depending on composition. Magneto-optical imaging detected regions up to 0.5 mm in size which were nearly 100% dense with Jc 2-6 times that of the matrix. Evaluation of resistivity curves using the Rowell method predicts that only 10-50% of the cross sectional area carries the normal state measurement current, suggesting that considerable increases in Jc in these ~80% dense MgB2 samples would be possible with complete grain and particle connectivity.
0603800v1
2006-06-08
Periodic Oscillations of Josephson-Vortex Flow Resistance in Oxygen-Deficient Y1Ba2Cu3Ox
We measured the Josephson vortex flow resistance as a function of magnetic field applied parallel to the ab-planes using annealed Y1Ba2Cu3Ox intrinsic Josephson junctions having high anisotropy (around 40) by oxygen content reduction. Periodic oscillations were observed in magnetic fields above 45-58 kOe, corresponding to dense-dilute boundary for Josephson vortex lattice. The observed period of oscillations, agrees well with the increase of one fluxon per two junctions ($H_{p}$\textit{=$\Phi $}$_{0}$\textit{/2Ls}), may correspond to formation of a triangular lattice of Josephson vortices as has been reported by Ooi et al. for highly anisotropic (larger than 200) Bi-2212 intrinsic Josephson junctions.
0606202v2
2006-06-26
Flux-flow resistivity anisotropy in the instability regime in the a-b plane of epitaxial YBCO thin films
Measurements of the nonlinear flux-flow resistivity $\rho$ and the critical vortex velocity $\rm v^*_\phi$ at high voltage bias close to the instability regime predicted by Larkin and Ovchinnikov \cite{LO} are reported along the node and antinode directions of the d-wave order parameter in the \textit{a-b} plane of epitaxial $YBa_2Cu_3O_{7-\delta}$ films. In this pinning-free regime, $\rho$ and $\rm v^*_\phi$ are found to be anisotropic with values in the node direction larger on average by 10% than in the antinode direction. The anisotropy of $\rho$ is almost independent of temperature and field. We attribute the observed results to the anisotropic quasiparticle distribution on the Fermi surface of $YBa_2Cu_3O_{7-\delta}$.
0606667v1
2006-07-01
Nonlocal Effect of Local Nonmagnetic Impurity in High-Tc Superconductors: Induced Local Moment and Huge Residual Resistivity
We study a Hubbard model with a strong onsite impurity potential based on an improved fluctuation-exchange (FLEX) approximation, which we call the GVI-FLEX method. We find that (i) both local and staggered susceptibilities are strongly enhanced around the impurity. By this reason, (ii) the quasiparticle lifetime as well as the local density of states (DOS) are strongly suppressed in a wide area around the impurity (like a Swiss cheese hole), which causes the ``huge residual resistivity'' beyond the s-wave unitary scattering value. These results by the GVI method naturally explains the various impurity effects in HTSC's in a unified way, which had been a long-standing theoretical problem.
0607011v1
2006-07-21
Vortex state microwave resistivity in Tl-2212 thin films
We present measurements of the field induced changes in the 47 GHz complex resistivity, $\Delta \tilde \rho(H,T)$, in Tl$_{2}$Ba$_{2}$CaCu$_{2}$O$_{8+x}$ (TBCCO) thin films with $T_{c}\simeq$ 105 K, prepared on CeO$_{2}$ buffered sapphire substrates. At low fields ($\mu_{0}H<$10 mT) a very small irreversible feature is present, suggesting a little role of intergranular phenomena. Above that level $\Delta \tilde \rho(H,T)$ exhibits a superlinear dependence with the field, as opposed to the expected (at high frequencies) quasilinear behaviour. We observe a crossover between predominantly imaginary to predominantly real (dissipative) response with increasing temperature and/or field. In addition, we find the clear scaling property $\Delta \tilde \rho(H,T)=\Delta \tilde \rho[H/H^{*}(T)]$, where the scaling field $H^{*}(T)$ maps closely the melting field measured in single crystals. We discuss our microwave results in terms of loss of flux lines rigidity.
0607552v1
2006-08-31
Magnetotransport in a two-dimensional electron system in dc electric fields
We report on nonequilibrium transport measurements in a high-mobility two-dimensional electron system subject to weak magnetic field and dc excitation. Detailed study of dc-induced magneto-oscillations, first observed by Yang {\em et al}., reveals a resonant condition that is qualitatively different from that reported earlier. In addition, we observe dramatic reduction of resistance induced by a weak dc field in the regime of separated Landau levels. These results demonstrate similarity of transport phenomena in dc-driven and microwave-driven systems and have important implications for ongoing experimental search for predicted quenching of microwave-induced zero-resistance states by a dc current.
0608727v3
2006-10-04
Quantum phase transition in the heavy-fermion compound YbIr$_2$Si$_2$
We investigate the pressure-temperature phase diagram of YbIr$_2$Si$_2$ by measuring the electrical resistivity $\rho(T)$. In contrast to the widely investigated YbRh$_2$Si$_2$, YbIr$_2$Si$_2$ is a paramagnetic metal below $p_c\simeq 8$ GPa. Interestingly, a first-order, presumably ferromagnetic, transition develops at $p_c$. Similar magnetic properties were also observed in YbRh$_2$Si$_2$ and YbCu$_2$Si$_2$ at sufficiently high pressures, suggesting a uniform picture for these Yb compounds. The ground state of YbIr$_2$Si$_2$ under pressure can be described by Landau Fermi-liquid (LFL) theory, in agreement with the nearly ferromagnetic Fermi-liquid (NFFL) model. Moreover, evidence of a weak valence transition, characterized by a jump of the Kadowaki-Woods (KW) ratio as well as an enhancement of the residual resistivity $\rho_0$ and of the quasiparticle-quasiparticle scattering cross section, is observed around 6 GPa.
0610126v1
2006-11-09
Small-angle interband scattering as the origin of the $T^{3/2}$ resistivity in MnSi
A possible explanation is given for the anomalous $T^{3/2}$ temperature dependence of the electrical resistivity of MnSi, which is observed in the high-pressure paramagnetic state. The unusual Fermi surface of MnSi includes large open sheets that intersect along the faces of the cubic Brillouin zone. Close to these intersections, long-wavelength interband magnetic spin fluctuations can scatter electrons from one sheet to the other. The current relaxation rate due to such interband scattering events is not reduced by vertex corrections as is that for scattering from intraband ferromagnetic fluctuations. Consequently, current relaxation proceeds in a manner similar to that occurring in nearly antiferromagnetic metals, in which low-temperature $T^{3/2}$ behavior is well known. It is argued that this type of non-Fermi-liquid behavior can, for a metal with ferromagnetic fluctuations near Fermi sheet intersections, persist over a much wider temperature range than it does in nearly antiferromagnetic metals.
0611236v1
2006-12-22
Transport through normal metal - graphene contacts
Conductance of zigzag interfaces between graphene sheet and normal metal is investigated in the tight-binding approximation. Boundary conditions, valid for a variety of scattering problems, are constructed and applied to the normal metal -- graphene -- normal metal (NGN) junctions. At the Dirac point, the conductance is determined solely by the evanescent modes and is inversely proportional to the length of the junction. It is also independent on the interface resistance. Away from the Dirac point, the propagating modes' contribution dominates. We also observe that even in the junctions with high interface resistance, for certain modes, ideal transmission is possible via Fabry-Perot like resonances.
0612577v3
2007-01-04
Anomalous Hall Resistance in Bilayer Quantum Hall Systems
We present a microscopic theory of the Hall current in the bilayer quantum Hall system on the basis of noncommutative geometry. By analyzing the Heisenberg equation of motion and the continuity equation of charge, we demonstrate the emergence of the phase current in a system where the interlayer phase coherence develops spontaneously. The phase current arranges itself to minimize the total energy of the system, as induces certain anomalous behaviors in the Hall current in the counterflow geometry and also in the drag experiment. They explain the recent experimental data for anomalous Hall resistances due to Kellogg et al. [M. Kellogg, I.B. Spielman, J.P. Eisenstein, L.N. Pfeiffer and K.W. West, Phys. Rev. Lett. \textbf{88} (2002) 126804; M. Kellogg, J.P. Eisenstein, L.N. Pfeiffer and K.W. West, Phys. Rev. Lett. \textbf{93} (2004) 036801] and Tutuc et al. [E. Tutuc, M. Shayegan and D.A. Huse, Phys. Rev. Lett. \textbf{93} (2004) 036802] at $\nu =1$.
0701063v1
1995-12-08
The Complex Structure of 2D Surfaces
The complex structure of a surface generated by the two-dimensional dynamical triangulation(DT) is determined by measuring the resistivity of the surface. It is found that surfaces coupled to matter fields have well-defined complex structures for cases when the matter central charges are less than or equal to one, while they become unstable beyond c=1. A natural conjecture that fine planar random network of resistors behave as a continuous sheet of constant resistivity is justified numerically for c<1.
9512014v1
2006-08-07
Random walk on the incipient infinite cluster for oriented percolation in high dimensions
We consider simple random walk on the incipient infinite cluster for the spread-out model of oriented percolation on $Z^d \times Z_+$. In dimensions $d>6$, we obtain bounds on exit times, transition probabilities, and the range of the random walk, which establish that the spectral dimension of the incipient infinite cluster is 4/3, and thereby prove a version of the Alexander--Orbach conjecture in this setting. The proof divides into two parts. One part establishes general estimates for simple random walk on an arbitrary infinite random graph, given suitable bounds on volume and effective resistance for the random graph. A second part then provides these bounds on volume and effective resistance for the incipient infinite cluster in dimensions $d>6$, by extending results about critical oriented percolation obtained previously via the lace expansion.
0608164v2
2003-02-21
New results from an extensive aging test on bakelite Resistive Plate Chambers
We present recent results of an extensive aging test, performed at the CERN Gamma Irradiation Facility on two single--gap RPC prototypes, developed for the LHCb Muon System. With a method based on a model describing the behaviour of an RPC under high particle flux conditions, we have periodically measured the electrode resistance R of the two RPC prototypes over three years: we observe a large spontaneous increase of R with time, from the initial value of about 2 MOhm to more than 250 MOhm. A corresponding degradation of the RPC rate capabilities, from more than 3 kHz/cm2 to less than 0.15 kHz/cm2 is also found.
0302077v2
2004-03-09
Measuring the force ejecting DNA from phage
We discuss how a balance can be established between the force acting to eject DNA from viral capsids and the force resisting its entry into a colloidal suspension which mimics the host cell cytoplasm. The ejection force arises from the energy stored in the capsid as a consequence of the viral genome (double-stranded DNA) being strongly bent and crowded on itself. The resisting force is associated with the osmotic pressure exerted by the colloidal particles in the host solution. Indeed, recent experimental work has demonstrated that the extent of ejection can be progressively limited by increasing the external osmotic pressure; at a sufficiently high pressure the ejection is completely suppressed. We outline here a theoritical analysis that allows a determination of the internal (capsid) pressure by examining the different relations between force and pressure inside and outside the capsid, using the experimentally measured position of the force balance.
0403057v1
2006-08-04
Design guide for electronics for resistive charge division in thermal neutron detection
An amplifier has been designed for optimal use of position sensitive thermal neutron detectors using the principle of resistive charge division. The important points in this optimization are: high counting rates and good spatial resolution. This amplifier is built as a hybrid circuit and is now used on several new instruments at the ILL. It consists of a fast low noise current pre-amplifier, a gaussian shaping circuit based on a 4th order active filter and an essentially noiseless baseline reconstruction. In this paper, we present a rather complete theoretical analysis of the problem that lead us to the choices made above, and allows for an optimal adaptation to other situations. An analysis of unwanted, secondary effects is also worked out.
0608046v1
2002-05-20
A Zoology of Bell inequalities resistant to detector inefficiency
We derive both numerically and analytically Bell inequalities and quantum measurements that present enhanced resistance to detector inefficiency. In particular we describe several Bell inequalities which appear to be optimal with respect to inefficient detectors for small dimensionality d=2,3,4 and 2 or more measurement settings at each side. We also generalize the family of Bell inequalities described in Collins et all (Phys. Rev. Lett. 88, 040404) to take into account the inefficiency of detectors. In addition we consider the possibility for pairs of entangled particles to be produced with probability less than one. We show that when the pair production probability is small, one must in general use different Bell inequalities than when the pair production probability is high.
0205130v2
2007-05-17
Incoherent non-Fermi liquid scattering in a Kondo lattice
One of the most notorious non-Fermi liquid properties of both archetypal heavy-fermion systems [1-4] and the high-Tc copper oxide superconductors [5] is an electrical resistivity that evolves linearly with temperature, T. In the heavy-fermion superconductor CeCoIn5 [5], this linear behaviour was one of the first indications of the presence of a zero-temperature instability, or quantum critical point. Here, we report the observation of a unique control parameter of T-linear scattering in CeCoIn5, found through systematic chemical substitutions of both magnetic and non-magnetic rare-earth, R, ions into the Ce sub-lattice. We find that the evolution of inelastic scattering in Ce1-xRxCoIn5 is strongly dependent on the f-electron configuration of the R ion, whereas two other key properties -- Cooper-pair breaking and Kondo-lattice coherence -- are not. Thus, T-linear resistivity in CeCoIn5 is intimately related to the nature of incoherent scattering centers in the Kondo lattice, which provides insight into the anomalous scattering rate synonymous with quantum criticality [7].
0705.2592v2
2007-07-22
Investigations of a THGEM-based imaging detector
We present the results of our recent studies on a Thick Gas Electron Multiplier (THGEM)-based imaging detector prototype. It consists of two 100x100 mm^2 THGEM electrodes in cascade, coupled to a resistive anode. The event location is recorded with a 2D double-sided readout electrode equipped with discrete delay-lines and dedicated electronics. The THGEM electrodes, produced by standard printed-circuit board and mechanical drilling techniques, a 0.4 mm thick with 0.5 mm diameter holes spaced by 1 mm. Localization resolutions of about 0.7 mm (FWHM) were measured with soft x-rays, in a detector operated with atmospheric-pressure Ar/CH4; good linearity and homogeneity were achieved. We describe the imaging-detector layout, the resistive-anode 2D readout system and the imaging properties. The THGEM has numerous potential applications that require large-area imaging detectors, with high-rate capability, single-electron sensitivity and moderate (sub-mm) localization resolution.
0707.3257v3
2007-08-13
Optimized minigaps for negative differential resistance creation in strongly delta-doped (1D) superlattices
The "atomic saw method" uses the passage of dislocations in two-dimensional (2D) quantum-well superlattices to create periodic slipping layers and one-dimensional (1D) quantum wire superlattices. The effects of this space structuring of the samples on the allowed energies are analysed in the case of GaAs d-doped superlattices. If they are sufficiently large, the various minigaps appearing in the 1D band structure could be responsible for the presence of negative differential resistance (NDR) with high critical current in these systems. The purpose is to determine the evolution of the minigaps in terms of the sample parameters and to obtain the means to determine both the 2D and 1D structural characteristics where NDR could appear.
0708.1673v1
2007-09-13
Influence of Mg Deficiency on the Superconductivity in MgB2 Thin Films Grown by using HPCVD
The effects of Mg deficiency in MgB2 films grown by using hybrid physical-chemical vapor deposition were investigated after vacuum annealing at various temperatures. High-quality MgB2 films grown on c-cut Al2O3 substrates with different superconducting transition temperatures (Tc) of 40.2 and 41 K were used in this study. As the annealing temperature was increased from 200 to 800 C, the Mg contents in the MgB2 films systemically decreased, but the Tc's did not change, within 0.12 K, until the annealing temperature reached 700 C. For MgB2 films annealed at 800 C for 30 min, however, no superconductivity was observed, and the temperature dependence of the resistivity showed a semiconducting behavior. We also found that the residual resistivity ratio decreased with increasing annealing temperature.
0709.1989v1
2007-12-20
The evolution of the Non-Fermi Liquid behavior of BaVS$_3$ under high pressure
Temperature, pressure, and magnetic field dependencies of the resistivity of BaVS$_3$ were measured above the critical pressure of $p_{cr}$=2 GPa, which is associated with the zero temperature insulator-to-metal (MI) transition. The resistivity exhibits the $T^n$ temperature dependence below $T_g\approx$15 K, with $n$ of 1.5 at $p_{cr}$, which increases continuously with pressure towards 2. This is interpreted as a crossover from non-Fermi (NFL) to Fermi-liquid (FL) behavior. Although the spin configuration of the $e_g$ electrons influences the charge propagation, the NFL behavior is attributed to the pseudogap that appears in the single particle spectrum of the $d_z^2$ electrons related to large quasi-one dimensional (Q-1d) 2$k_F$-CDW fluctuations. The non-monotonic magnetic field dependence of $\Delta$$\rho$/$\rho$ reveals a characteristic field $B_0\approx$12 T attributed to the full suppression of the pseudogap.
0712.3393v1
2008-02-05
Verwey transition in Fe$_{3}$O$_{4}$ at high pressure: quantum critical behavior at the onset of metallization
We provide evidence for the existence of a {\em quantum critical point} at the metallization of magnetite Fe$_{3}$O$_{4}$ at an applied pressure of $p_{c} \approx 8$ GPa. We show that the present ac magnetic susceptibility data support earlier resistivity data. The Verwey temperature scales with pressure $T_{V}\sim (1-p/p_{c})^{\nu}$, with $\nu\sim 1/3$. The resistivity data shows a temperature dependence $\rho(T)=\rho_{0}+AT^{n}$, with $n\simeq 3$ above and 2.5 at the critical pressure, respectively. This difference in $n$ with pressure is a sign of critical behavior at $p_{c}$. The magnetic susceptibility is smooth near the critical pressure, both at the Verwey transition and near the ferroelectric anomaly. A comparison with the critical behavior observed in the Mott-Hubbard and related systems is made.
0802.0631v1
2008-02-20
Development of bakelite based Resistive Plate Chambers
A Comparative study has been performed on Resistive Plate Chambers made of different grades of bakelite paper laminates, produced and commercially available in India. The chambers, operated in the streamer mode using argon : tetrafluroethane : isobutane in 34:59:7 mixing ratio, are tested with cosmic rays for the efficiency and the stability with cosmic rays. A particular grade of bakelite (P-120, NEMA LI-1989 Grade XXX), used for high voltage insulation in humid conditions, was found to give satisfactory performance with stable efficiency of > 96% continuously for more than 110 days. A silicone treatment of the inner surfaces of the bakelite RPC is found to be necessary for operation of the detector.
0802.2766v1
2008-03-06
Graph Sparsification by Effective Resistances
We present a nearly-linear time algorithm that produces high-quality sparsifiers of weighted graphs. Given as input a weighted graph $G=(V,E,w)$ and a parameter $\epsilon>0$, we produce a weighted subgraph $H=(V,\tilde{E},\tilde{w})$ of $G$ such that $|\tilde{E}|=O(n\log n/\epsilon^2)$ and for all vectors $x\in\R^V$ $(1-\epsilon)\sum_{uv\in E}(x(u)-x(v))^2w_{uv}\le \sum_{uv\in\tilde{E}}(x(u)-x(v))^2\tilde{w}_{uv} \le (1+\epsilon)\sum_{uv\in E}(x(u)-x(v))^2w_{uv}. (*)$ This improves upon the sparsifiers constructed by Spielman and Teng, which had $O(n\log^c n)$ edges for some large constant $c$, and upon those of Bencz\'ur and Karger, which only satisfied (*) for $x\in\{0,1\}^V$. A key ingredient in our algorithm is a subroutine of independent interest: a nearly-linear time algorithm that builds a data structure from which we can query the approximate effective resistance between any two vertices in a graph in $O(\log n)$ time.
0803.0929v4
2008-03-12
Bardeen-Stephen flux flow law disobeyed in the high-$T_c$ superconductor Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$
Pulsed high current experiments in single crystals of the high-$T_{c}$ superconductor Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+\delta}$ in c-axis directed magnetic field $H$ reveal that the $ab$-face resistance in the free flux flow regime is a solely logarithmic function of H, devoid of any power law component. Re-analysis of published data confirms this result and leads to empirical analytic forms for the $ab$-plane and c-axis resistivities: $\rho_{ab}\propto$ $H^{3/4}$, which does not obey the expected Bardeen-Stephen result for free flux flow, and $\rho_{c} \propto H^{-3/4} \log^{2}H$.
0803.1804v1
2008-05-05
Fast dynamos in weakly ionized gases
The turnover of interstellar gas on $\sim 10^9$yr timescales argues for the continuous operation of a galactic dynamo. The conductivity of interstellar gas is so high that the dynamo must be "fast" - i.e. the magnetic field must be amplified at a rate nearly independent of the magnetic diffusivity. Yet, all the fast dynamos so far known - and all direct numerical simulations of interstellar dynamos - yield magnetic power spectra that peak at the resistive scale, while galactic magnetic fields have substantial power on large scales. In this paper we show that in weakly ionized gas the limiting scale may be the ion-neutral decoupling scale, which although still small is many orders of magnitude larger than the resistive scale.
0805.0412v1
2008-05-26
Negative differential resistance in molecular junctions: application to graphene ribbon junctions
Using self-consistent calculations based on Non-Equilibrium Green's Function (NEGF) formalism, the origin of negative differential resistance (NDR) in molecular junctions and quantum wires is investigated. Coupling of the molecule to electrodes becomes asymmetric at high bias due to asymmetry between its highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels. This causes appearance of an asymmetric potential profile due to a depletion of charge and reduction of screening near the source electrode. With increasing bias, this sharp potential drop leads to an enhanced localization of the HOMO and LUMO states in different parts of the system. The reduction in overlap, caused by localization, results in a significant reduction in the transmission coefficient and current with increasing bias. An atomic chain connected to two Graphene ribbons was investigated to illustrate these effects. For a chain substituting a molecule, an even-odd effect is also observed in the NDR characteristics.
0805.3980v1
2008-06-10
Are Microwave Induced Zero Resistance States Necessarily Static?
We study the effect of inhomogeneities in Hall conductivity on the nature of the Zero Resistance States seen in the microwave irradiated two-dimensional electron systems in weak perpendicular magnetic fields, and we show that time-dependent domain patterns may emerge in some situations. For an annular Corbino geometry, with an equilibrium charge density that varies linearly with radius, we find a time-periodic non-equilibrium solution, which might be detected by a charge sensor, such as an SET. For a model on a torus, in addition to static domain patterns seen at high and low values of the equilibrium charge inhomogeneity, we find that, in the intermediate regime, a variety of nonstationary states can also exist. We catalog the possibilities we have seen in our simulations. Within a particular phenomenological model, we show that linearizing the nonlinear charge continuity equation about a particularly simple domain wall configuration and analyzing the eigenmodes allows us to estimate the periods of the solutions to the full nonlinear equation.
0806.1562v1
2008-06-13
Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07)
SmFeAsO and the isostructural superconducting SmFeAs(O0.93F0.07) samples were prepared. Characterization by means of Rietveld refinement of X-ray powder diffraction data, scanning electron microscope observation, transmission electron microscope analysis, resistivity and magnetization measurements were carried out. Sintering treatment strongly improves the grain connectivity, but, on the other hand, induces a competition between the thermodynamic stability of the oxy-pnictide and Sm2O3, hence worsening the purity of the sample. In the pristine sample both magnetization and resistivity measurements clearly indicate that two different sources of magnetism are present: the former related to Fe ordering at 140 K and the latter due to the Sm ions that orders antiferromagnetically at low temperature. The feature at 140 K disappears in the F-substituted sample and, at low temperatures a superconducting transition appears. The magnetoresistivity curves of the F-substituted sample probably indicates very high critical field values.
0806.2205v1
2008-07-17
Photosensitive Strip RETHGEM
An innovative photosensitive gaseous detector, consisting of a GEM like amplification structure with double layered electrodes (instead of commonly used metallic ones) coated with a CsI reflective photocathode, is described. In one of our latest designs, the inner electrode consists of a metallic grid and the outer one is made of resistive strips; the latter are manufactured by a screen printing technology on the top of the metallic strips grid The inner metallic grid is used for 2D position measurements whereas the resistive layer provides an efficient spark protected operation at high gains - close to the breakdown limit. Detectors with active areas of 10cm x10cm and 10cm x20cm were tested under various conditions including the operation in photosensitive gas mixtures containing ethylferrocene or TMAE vapors. The new technique could have many applications requiring robust and reliable large area detectors for UV visualization, as for example, in Cherenkov imaging devices.
0807.2718v1
2008-07-21
Superconductivity at 34.7 K in the iron arsenide Eu0.7Na0.3Fe2As2
EuFe2As2 is a member of the ternary iron arsenide family. Similar to BaFe2As2 and SrFe2As2, EuFe2As2 exhibits a clear anomaly in resistivity near 200 K. It suggests that EuFe2As2 is another promising parent compound in which superconductivity may be realized by appropriate doping. Here we report the discovery of superconductivity in Eu0.7Na0.3Fe2As2 by partial substitution of the europium site with sodium. ThCr2Si2 tetragonal structure, as expected for EuFe2As2, is formed as the main phase for the composition Eu0.7Na0.3Fe2As2. Resistivity measurement reveals a transition temperature as high as 34.7 K in this compound, which is higher than the Tc of Eu0.5K0.5Fe2As2.
0807.3293v3
2008-08-03
Magnetic and Transport Studies on Electron-doped CeFeAsO1-xFx Superconductor
The magnetic and transport behaviors of cerium substituted iron oxy-arsenide superconductor with x = 0.1 to 0.4 fluoride (F) doping have been investigated in this report. Temperature dependent susceptibility and resistivity measurements showed the 0.1 F-doped sample (CeFeAsO0.9F0.1) has a superconducting transition temperature (Tc) of around 30 K. With increasing doping beyond x = 0.2 Tc saturates to around 40 K. Temperature dependent susceptibility measured in different magnetic fields for the under-doped sample showed Meissner effect in low field and the diamagnetism is still visible up to 1 Tesla, with an obvious magnetic transition below 5 K, perhaps originating from magnetic ordering of the rare earth cerium. The corresponding field dependent resistance versus temperature measurements indicated a broadening of less than 3 K for Tc at mid-point by increasing the field to 5 Tesla indicating rather low anisotropy. An estimated upper critical field of more than 48 Tesla and accordingly an estimated maximum coherence length of 2.6 nm were obtained confirming the high upper critical field with a short coherence length for this superconductor.
0808.0296v1
2008-08-22
Correlation between extrinsic electroresistance and magnetoresistance in fine-grained La0.7Ca0.3MnO3
We report our observation of a correlation between the extrinsic electroresistance (EER) and magnetoresistance (EMR) via grain size in fine-grained La0.7Ca0.3MnO3. The nature of dependence of EER and EMR on grain size (~0.2-1.0 micron) indicates that for finer grains with low-resistive boundaries both of them follow similar trend whereas they differ for coarser grains with high-resistive boundaries. This could be due to a crossover in the mechanism of charge transport across the grain boundaries - from spin-depedent scattering process to spin-polarized tunneling one - as a function of grain size.
0808.3043v2
2008-09-28
Scaling of 1/f noise in tunable break-junctions
We have studied the $1/f$ voltage noise of gold nano-contacts in electromigrated and mechanically controlled break-junctions having resistance values $R$ that can be tuned from 10 $\Omega$ (many channels) to 10 k$\Omega$ (single atom contact). The noise is caused by resistance fluctuations as evidenced by the $S_V\propto V^2$ dependence of the power spectral density $S_V$ on the applied DC voltage $V$. As a function of $R$ the normalized noise $S_V/V^2$ shows a pronounced cross-over from $\propto R^3$ for low-ohmic junctions to $\propto R^{1.5}$ for high-ohmic ones. The measured powers of 3 and 1.5 are in agreement with $1/f$-noise generated in the bulk and reflect the transition from diffusive to ballistic transport.
0809.4841v1
2008-10-20
Polaron relaxation and hopping conductivity in LaMn$_{1-x}$Fe$_{x}$O$_3$
Dc and ac transport properties as well as electric modulus spectra have been investigated for the samples LaMn$_{1-x}$Fe$_{x}$O$_3$ with compositions 0 $\leq x \leq$ 1.0. The bulk dc resistivity shows a temperature variation consistent with the variable range hopping mechanism at low temperature and Arrhenius mechanism at high temperatures. The ac conductivity has been found to follow a power law behavior at a limited temperature and frequency region where Anderson-localization plays a significant role in the transport mechanism for all the compositions. At low temperatures large dc resistivities and dielectric relaxation behavior for all the compositions are consistent with the polaronic nature of the charge carriers. Scaling of the modulus spectra shows that the charge transport dynamics is independent of temperature for a particular composition but depends strongly on different compositions possibly due to different charge carrier concentrations and structural properties.
0810.3502v1
2008-11-05
Superconductivity at 56 K in Samarium-doped SrFeAsF
We synthesized the samples Sr$_{1-x}$Sm$_x$FFeAs with ZrCuSiAs-type structure. These samples were characterized by resistivity and susceptibility. It is found that substitution of rare earth metal for alkaline earth metal in this system suppresses the anomaly in resistivity and induces superconductivity. Superconductivity at 56 K in nominal composition Sr$_{0.5}$Sm$_{0.5}$FFeAs is realized, indicating that the superconducting transition temperatures in the iron arsenide fluorides can reach as high as that in oxypnictides with the same structure.
0811.0761v3
2008-12-31
Cosmic-ray driven dynamo in galactic disks
We present new developments on the Cosmic--Ray driven, galactic dynamo, modeled by means of direct, resistive CR--MHD simulations, performed with ZEUS and PIERNIK codes. The dynamo action, leading to the amplification of large--scale galactic magnetic fields on galactic rotation timescales, appears as a result of galactic differential rotation, buoyancy of the cosmic ray component and resistive dissipation of small--scale turbulent magnetic fields. Our new results include demonstration of the global--galactic dynamo action driven by Cosmic Rays supplied in supernova remnants. An essential outcome of the new series of global galactic dynamo models is the equipartition of the gas turbulent energy with magnetic field energy and cosmic ray energy, in saturated states of the dynamo on large galactic scales.
0901.0111v1
2009-01-13
Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films
We compare and contrast the low temperature magnetotransport properties of ultra-thin, insulating, Be films with and without spin-orbit scattering (SOS). Beryllium films have very little intrinsic SOS, but by "dusting" them with sub-monolayer coverages of Au, one can introduce a well controlled SOS rate. Pure Be films with sheet resistance R >R_Q exhibit a low-temperature negative magnetoresistance (MR) that saturates to the quantum resistance R_Q = h/e^2. This high-field quantum metal phase is believed to represent a new ground state of the system. In contrast, the corresponding negative MR in Be/Au films is greatly diminished, suggesting that, in the presence of strong SOS, the quantum metal phase can only be reached at field scales well beyond those typically available in a low temperature laboratory.
0901.1873v1
2009-02-12
Two-Fluid Magnetohydrodynamic Simulations of Relativistic Magnetic Reconnection
We investigate the large scale evolution of a relativistic magnetic reconnection in an electron-positron pair plasma by a relativistic two-fluid magnetohydrodynamic (MHD) code. We introduce an inter-species friction force as an effective resistivity to dissipate magnetic fields. We demonstrate that magnetic reconnection successfully occurs in our two-fluid system, and that it involves Petschek-type bifurcated current layers in later stage. We further observe a quasi-steady evolution thanks to an open boundary condition, and find that the Petschek-type structure is stable over the long time period. Simulation results and theoretical analyses exhibit that the Petschek outflow channel becomes narrower when the reconnection inflow contains more magnetic energy, as previously claimed. Meanwhile, we find that the reconnection rate goes up to ~1 in extreme cases, which is faster than previously thought. The role of the resistivity, implications for reconnection models in the magnetically dominated limit, and relevance to kinetic reconnection works are discussed.
0902.2074v2
2009-03-03
Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well
We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.
0903.0486v2
2009-03-22
The Turbulent Magnetic Prandtl Number of MHD Turbulence in Disks
The magnetic Prandtl number Pr_M is the ratio of viscosity to resistivity. In astrophysical disks the diffusion of angular momentum (viscosity) and magnetic fields (resistivity) are controlled by turbulence. Phenomenological models of the evolution of large scale poloidal magnetic fields in disks suggest that the turbulent magnetic Prandtl number Pr_{M,T} controls the rate of escape of vertical field from the disk; for Pr_{M,T} leq R/H vertical field diffuses outward before it can be advected inward by accretion. Here we measure field diffusion and angular momentum transport due to MHD turbulence in a shearing box, and thus Pr_{M,T}, by studying the evolution of a sinusoidal perturbation in the magnetic field that is injected into a turbulent background. We show that the perturbation is always stable, decays approximately exponentially, has decay rate proportional to k^2, and that the implied Pr_{M,T} ~ 1.
0903.3757v1
2009-04-08
Gate-controlled non-volatile graphene-ferroelectric memory
In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working channels and is switched by controlling the polarization of the ferroelectric thin film using gate voltage sweep. A non-volatile resistance change exceeding 200% is achieved in our graphene-ferroelectric hybrid devices. The experimental observations are explained by the electrostatic doping of graphene by electric dipoles at the ferroelectric/graphene interface.
0904.1326v2
2009-04-13
Breakdown of the N=0 Quantum Hall State in graphene: two insulating regimes
We studied the unusual Quantum Hall Effect (QHE) near the charge neutrality point (CNP) in high-mobility graphene sample for magnetic fields up to 18 T. We observe breakdown of the delocalized QHE transport and strong increase in resistivities $\rho_{xx},|\rho_{xy}|$ with decreasing Landau level filling for $\nu < 2$, where we identify two insulating regimes. For $1 \gtrsim |\nu| \gtrsim 1/2$ we find an exponential increase of $\rho_{xx,xy} \sim e^{a(H-H_c)}$ within the range up to several resistance quanta $R_K$, while the Hall effect gradually disappears, consistent with the Hall insulator (HI) with local transport. Then, at $\nu \approx 1/2$ a cusp in $\rho_{xx}(H)$ followed by an onset of even faster growth indicates transition to a collective insulator (CI) state. The likely candidate for this state is a pinned Wigner crystal.
0904.1996v3
2009-08-03
The role of thermal conduction in magnetized viscous-resistive ADAFs
Observations of the hot gas, which is surrounding Sgr A* and a few other nearby galactic nuclei, imply that mean free paths of electron and proton are comparable to gas capture radius. So, hot accretion flows likely proceed under week collision conditions. As a result thermal conduction by ions has a considerable contribution in transfer of the realized heat in accretion mechanisms. We study a 2D advective accretion disk bathed in a poloidal magnetic field of a central accretor in the presence of thermal conduction. We find self-similar solutions for an axisymmetric, rotating, steady, viscose-resistive, magnetized accretion flow. The dominant mechanism of energy dissipation is assumed to be turbulence viscosity and magnetic diffusivity due to magnetic field of the central accretor. We show that the global structure of ADAFs are sensitive to viscosity, advection and thermal conduction parameters. We discuss how radial flow, angular velocity and density of accretion flows may vary with the advection, thermal conduction and viscous parameters.
0908.0325v1
2009-08-23
Direct Measurement of Thermal Fluctuation of High-Q Pendulum
We achieved for the first time a direct measurement of the thermal fluctuation of a pendulum in an off-resonant region using a laser interferometric gravitational wave detector. These measurements have been well identified for over one decade by an agreement with a theoretical prediction, which was derived by a fluctuation-dissipation theorem. Thermal fluctuation is dominated by the contribution of resistances in coil-magnet actuator circuits. When we tuned these resistances, the noise spectrum also changed according to a theoretical prediction. The measured thermal noise level corresponds to a high quality factor on the order of 10^5 of the pendulum.
0908.3227v1
2009-08-25
Superconductivity in a single C60 transistor
Single molecule transistors (SMTs) are currently attracting enormous attention as possible quantum information processing devices. An intrinsic limitation to the prospects of these however is associated to the presence of a small number of quantized conductance channels, each channel having a high access resistance of at best $R_{K}/2=h/2e^{2}$=12.9 k$\Omega$. When the contacting leads become superconducting, these correlations can extend throughout the whole system by the proximity effect. This not only lifts the resistive limitation of normal state contacts, but further paves a new way to probe electron transport through a single molecule. In this work, we demonstrate the realization of superconducting SMTs involving a single C60 fullerene molecule. The last few years have seen gate-controlled Josephson supercurrents induced in the family of low dimensional carbon structures such as flakes of two-dimensional graphene and portions of one-dimensional carbon nanotubes. The present study involving a full zero-dimensionnal fullerene completes the picture.
0908.3638v1
2009-08-26
Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance of gated epitaxial graphene on SiC (0001).
0908.3822v3
2009-12-03
C-axis critical current of a PrFeAsO0.7 single crystal
The c-axis transport properties of a high-pressure synthesized PrFeAsO0.7 single crystal are studied using s-shaped junctions. Resistivity anisotropy of about 120 detected at 50 K shows the presence of strong anisotropy in the electronic states. The obtained critical current density for the c-axis of 2.9*10^5 A/cm^2 is two orders of magnitude larger than that in Bi2Sr1.6La0.4CuO6+d. The appearance of a hysteresis in the current-voltage curve below T_c is the manifestation of the intrinsic Josephson effect similar to that in cuprate superconductors. The suppression of the critical current-normal resistance (I_cR_n) product is explained by an inspecular transport in s_pm-wave pair potential.
0912.0598v1
2010-01-12
Resistive Magnetic Field Generation at Cosmic Dawn
Relativistic charged particles (CR for cosmic-rays) produced by Supernova explosion of the first generation of massive stars that are responsible for the re-ionization of the universe escape into the intergalactic medium, carrying an electric current. Charge imbalance and induction give rise to a return current, $\vec j_t$, carried by the cold thermal plasma which tends to cancel the CR current. The electric field, $\vec E=\eta \vec j_t$, required to draw the collisional return current opposes the outflow of low energy cosmic rays and ohmically heats the cold plasma. Owing to inhomogeneities in the resistivity, $\eta(T)$, caused by structure in the temperature, $T$, of the intergalactic plasma, the electric field possesses a rotational component which sustains Faraday's induction. It is found that magnetic field is robustly generated throughout intergalactic space at rate of 10$^{-17}-10^{-16}$ Gauss/Gyr, until the temperature of the intergalactic medium is raised by cosmic reionization. The magnetic field may seed the subsequent growth of magnetic fields in the intergalactic environment.
1001.2011v2
2010-01-19
Theory of Normal State Pseudogap Behavior in FeSe(1-x)$Te(x)
The normal state of the recently discovered Iron Selenide (FeSe)-based superconductors shows a range of inexplicable features. Along with bad-metallic resistivity, characteristic pseudogap features and proximity to insulating states, reminiscent of the underdoped high-Tc cuprates, mark these systems as strongly correlated non-Fermi Liquid metals. Here, using the first-principles LDA+DMFT method, we show how strong multi-orbital correlation-induced orbital-selective Mott-like physics leads to an orthogonality catastrophe underpinning these inexplicable incoherent features. Excellent agreement with a range of resistivity and Seebeck data strongly support our proposal. We discuss pseudogap regime microscopically, along with implications for the nature of the instability at lower T, and propose that related systems could be of use in thermoelectric devices.
1001.3273v1
2010-02-08
Indirect Magnetic-Field-Tuned Superconductor-Insulator Transitions and Weak Localization of Bosons of Quasi-Two Dimensional Metal Films
Magnetic field and electrostatically tuned superconductor-insulator (SI) transitions of ultrathin metal films with levels of disorder that place them near the disorder-tuned SI transition appear to be direct, continuous quantum phase transitions. When films with lower levels of disorder are subjected to a perpendicular magnetic field, instead of a direct transition, a mixed superconductor-nonsuperconductor regime emerges at the lowest temperatures. The zero temperature limit of the resistance is either insulating or superconducting, depending upon the value of the field, suggesting that the behavior in this limit is governed by percolation physics. At high fields and low temperatures, in the nominally insulating regime, the resistance rather than the conductance is found to be a logarithmic function of temperature corresponding to predicitons for the weak localization of bosons.
1002.1720v1
2010-02-16
Dynamic Nuclear Polarization and Nuclear Magnetic Resonance in the Simplest Pseudospin Quantum Hall Ferromagnet
We present dynamic nuclear polarization (DNP) in the simplest pseudospin quantum Hall ferromagnet (QHF) of an InSb two-dimensional electron gas with a large g factor using tilted magnetic fields. The DNP-induced amplitude change of a resistance spike of the QHF at large current enables observation of the resistively detected nuclear magnetic resonance of the high nuclear spin isotope 115In with nine quadrupole splittings. Our results demonstrate the importance of domain structures in the DNP process. The nuclear spin relaxation time T1 in this QHF was relatively short (~ 120 s), and almost temperature independent.
1002.3087v3
2010-02-28
Microwave-induced magnetoresistance of two-dimensional electrons interacting with acoustic phonons
The influence of electron-phonon interaction on magnetotransport in two-dimensional electron systems under microwave irradiation is studied theoretically. Apart from the phonon-induced resistance oscillations which exist in the absence of microwaves, the magnetoresistance of irradiated samples contains oscillating contributions due to electron scattering on both impurities and acoustic phonons. The contributions due to electron-phonon scattering are described as a result of the interference of phonon-induced and microwave-induced resistance oscillations. In addition, microwave heating of electrons leads to a special kind of phonon-induced oscillations. The relative strength of different contributions and their dependence on parameters are discussed. The interplay of numerous oscillating contributions suggests a peculiar magnetoresistance picture in high-mobility layers at the temperatures when electron-phonon scattering becomes important.
1003.0178v1
2010-03-19
Evidence for Anisotropic Vortex Dynamics and Pauli Limitation in the Upper Critical Field of FeSe1-xTex
We have determined HC2(T) for FeSe1-xTex (x=0.52) single crystals using resistivity measurements at high static and pulsed magnetic field, as well as specific heat measurements up to 9T. We find that the significant anisotropy of the initial slope of HC2(T) determined from resistivity measurements, is not present when HC2 is determined from the specific heat results. This suggests that the thermodynamic upper critical field is almost isotropic, and that anisotropic vortex dynamics play a role. Further evidence of anisotropic vortex dynamics is found in the behaviour in pulsed field. We also find that Pauli limiting must be included in order to fit the temperature dependence of HC2, indicating probably higher effective mass in FeSe1-xTex than in other Fe superconductors.
1003.3812v1
2010-03-29
Three Dimensional Superconductivity in FeSe with Tczero Up to 10.9 K Induced by Internal Strain
Polycrystalline sample FeSe was synthesized by a self-flux solution method which shows a zero resistance temperature up to 10.9 K and a Tconset (90% \rhon, \rhon: normal state resistivity) up to 13.3 K. The decrease of superconducting transition temperature by heat treatment indicates that internal crystallographic strain which plays the same effect as external pressure is the origin of its high Tc. The fluctuation conductivity was studied which could be well described by 3D Aslamazov-Larkin (AL) power law. The estimated value of coherence length \xic=9.2 \AA is larger than the distance between conducting layers (~6.0 \AA), indicating the three-dimensional nature of superconductivity in this compound.
1003.5415v1
2010-06-01
Synthesis, structural and physical properties of $δ'$-FeSe$_{1-x}$
We report on synthesis, structural characterization, resistivity, magnetic and thermal expansion measurements on the as yet unexplored $\delta'$-phase of FeSe$_{1-x}$, here synthesized under ambient- (AP) and high-pressure (HP) conditions. We show that in contrast to $\beta$-FeSe$_{1-x}$, monophasic superconducting $\delta'$-FeSe$_{1-x}$ can be obtained in off-stoichiometric samples with excess Fe atoms preferentially residing in the van der Waals gap between the FeSe layers. The AP $\delta'$-FeSe$_{1-x}$ sample studied here ($T_c$ $\simeq$ 8.5\,K) possesses an unprecedented residual resistivity ratio RRR $\simeq$ 16. Thermal expansion data reveal a small feature around $\sim$90\,K, which resembles the anomaly observed at the structural and magnetic transitions for other Fe-based superconductors, suggesting that some kind of "magnetic state" is formed also in FeSe. %indicative of a fluctuating magnetic ordering. For HP samples (RRR $\simeq$ 3), the disorder within the FeSe layers is enhanced through the introduction of vacancies, the saturated magnetic moment of Fe is reduced and only spurious superconductivity is observed.
1006.0073v2
2010-07-23
Phonon-induced resistance oscillations of two-dimensional electron systems drifting with supersonic velocities
We present a theory of the phonon-assisted nonlinear dc transport of 2D electrons in high Landau levels. The nonlinear dissipative resistivity displays quantum magneto-oscillations governed by two parameters which are proportional to the Hall drift velocity $v_H$ of electrons in electric field and the speed of sound $s$. In the subsonic regime, $v_H<s$, the theory quantitatively reproduces the oscillation pattern observed in recent experiments. We also find the $\pi/2$ phase change of oscillations across the sound barrier $v_H=s$. In the supersonic regime, $v_H>s$, the amplitude of oscillations saturates with lowering temperature, while the subsonic region displays exponential suppression of the phonon-assisted oscillations with temperature.
1007.4211v1
2010-07-26
Quantum phase transition of dynamical resistance in a mesoscopic capacitor
We study theoretically dynamic response of a mesoscopic capacitor, which consists of a quantum dot connected to an electron reservoir via a point contact and capacitively coupled to a gate voltage. A quantum Hall edge state with a filling factor nu is realized in a strong magnetic field applied perpendicular to the two-dimensional electron gas. We discuss a noise-driven quantum phase transition of the transport property of the edge state by taking into account an ohmic bath connected to the gate voltage. Without the noise, the charge relaxation for nu>1/2 is universally quantized at R_q=h/(2e^2), while for nu<1/2, the system undergoes the Kosterlitz-Thouless transtion, which drastically changes the nature of the dynamical resistance. The phase transition is facilitated by the noisy gate voltage, and we see that it can occur even for an integer quantum Hall edge at nu=1. When the dissipation by the noise is sufficiently small, the quantized value of R_q is shifted by the bath impedance.
1007.4404v1
2010-08-12
Single crystal growth and superconducting properties of LiFeAs
We report the successful growth of high quality single crystals of LiFeAs with lateral sizes up to 5 x 5 mm2 by the Sn-flux method. Electrical resistivity studies reveal that the superconducting onset temperature is 18.2 K with a transition width less than 1.1 K and the ratio of room temperature to residual resistivity is about 24. Bulk superconductivity is supported by perfect shielding in the magnetic susceptibility and a clear jump in the specific heat Cp, resulting in deltaCp/T ~ 20.0 mJ/mol*K2. Upper critical field slopes of dHc2c/dT ~ -1.39 and dHc2ab/dT ~ -2.99 T/K near Tc predict zero temperature upper critical fields of Hc2c(0) ~ 17.2 and Hc2ab(0) ~ 36.9 T and coherence lengths of Xi_ab = 4.4 and Xi_c = 2.0 nm in a single band model. This result points to a modest superconducting anisotropy about 2.3 in LiFeAs.
1008.2050v1
2010-09-07
Mesoscopic transport in ultrathin films of La$_{0.67}$Ca$_{0.33}$MnO$_3$
We investigate the electrical transport in mesoscopic structures of La$_{0.67}$Ca$_{0.33}$MnO$_3$ in the regime of the metal-insulator transition by fabricating microbridges from strained and unstrained thin films. We measure current-voltage characteristics as function of temperature and in high magnetic fields and with varying film thickness. For strained films, in warming from the metallic to the insulating state, we find non-linear effects in the steep part of the transition characterized by a differential resistance with a strong peak around zero applied current, and saturating at higher currents after resistance drops up to 60 %. We propose that this nonlinear behavior is associated with melting of the insulating state by injecting charge carriers, signalling the occurrence of an intervening phase which involves the formation of short range polaron correlations.
1009.1386v1
2010-09-28
Influence of disorder on conductance in bilayer graphene under perpendicular electric field
Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric field; however, the resistance does not diverge even at low temperatures. The observed temperature dependence of the conductance consists of two contributions: the thermally activated (TA) conduction and the variable range hopping (VRH) conduction. We find that for the measured electric field range (0 - 1.3 V/nm) the mobility gap extracted from the TA behavior agrees well with the theoretical prediction for the band gap opening in bilayer graphene, although the VRH conduction deteriorates the insulating state more seriously in bilayer graphene with smaller mobility. These results show that the improvement of the mobility is crucial for the successful operation of the bilayer graphene field effect transistor.
1009.5467v1
2010-11-18
Vortex density waves and negative absolute resistance in patterned superconductors
We study theoretically dynamical phases of vortices in superconducting films with arrays of obstacles. By performing a series of molecular dynamics simulations and analytical calculations, we demonstrate the existence of a phase of soliton-like vortex-density waves appearing in a wide range of parameters. These waves are formed by a self-assembled phase separation process induced by strongly nonlinear density fluctuations of the moving vortex matter above a certain critical driving current. At high vortex concentrations, the waves move at an approximately current-independent speed resulting in a wide plateau in the voltage-current characteristics. At stronger drives, the vortex system enters into a fully jammed (zero-voltage) phase. By combining ac and dc drives, the interplay between the vortex-density-wave and jammed phases leads to the observation of negative absolute mobility of vortices, which induces the superconducting film into a negative resistance state.
1011.4172v2
2010-12-03
Magnetic and electrical properties and carrier doping effects on the Fe-based host compound Sr4Sc2Fe2As2O6
Additional charge carriers were introduced to the iron oxyarsenide Sr4Sc2Fe2As2O6 under a high-pressure condition, followed by measurements of electrical resistivity, Hall coefficient, and magnetic susceptibility. The host compound Sr4Sc2Fe2As2O6 shows metallic conductivity down to ~200 K and turns to show a semiconducting-like conductivity accompanied by a positive magneto-resistance (22% at 70 kOe). Although the carrier density is comparable at 300 K (5.9x1021 cm-3) with that of the other Fe-based superconductors, no superconductivity appears down to 2 K. This is primarily because the net carrier density decreases over 3 orders of magnitude on cooling and additionally a possible magnetic order at ~120 K prevents carriers from pairing. The properties were altered largely by introducing the additional carriers.
1012.0616v1
2010-12-06
An analytical model of fractional overshooting
We predict resistance anomalies to be observed at high mobility two dimensional electron systems (2DESs) in the fractional quantized Hall regime, where the narrow (L <10 ?m) Hall bar is defined by top gates. An analytic calculation scheme is used to describe the formation of integral and fractional incompressible strips. We incorporate the screening properties of the 2DES, together with the effects of perpendicular magnetic field, to calculate the effective widths of the current carrying channels. The many-body effects are included to our calculation scheme through the energy gap obtained from the well accepted formulation of the composite fermions. We show that, the fractional incompressible strips at the edges, assuming different filling factors, become evanescent and co-exist at certain magnetic field intervals yielding an overshoot at the Hall resistance. Similar to that of the integral quantized Hall effect. We also provide a mechanism to explain the absence of 1/3 state at the Fabry-Perot interference experiments. Yet, an un-investigated sample design is proposed to observe and enhance the fragile effects like interference and overshooting based on our analytical model.
1012.1294v1
2010-12-31
Beam test of signal cross-talk and transmission for LMPRC
A new prototype of large area Multi-gap Resistive Plate Chamber (MRPC) with long readout strips was built. This Long-strip Multi-gap Resistive Plate Chamber (LMRPC) is double stacked and has ten 250 $\mu$m-thick gas gaps. Signals are read out from two ends of strip with an active area of 50 cm$\times$2.5 cm in each. The detector was tested at FOPI in GSI, using the secondary particles of proton beams ($E = 3.5 GeV$) colliding with a Pb target. The results show that the LMRPC prototype has a time resolution of about 60$\sim$70 ps; the detecting efficiency is over 98% and the ratio of cross-talk is lower than 2%. The detector also has a good spatial resolution of 0.36 cm along the strip direction.
1101.0224v1
2011-02-10
Stimulated emission and absorption of photons in magnetic point contacts: toward metal-based spin-lasers
Point contacts between high anisotropy ferromagnetic SmCo5 and normal metal Cu are used to achieve a strong spin-population inversion in the contact core. Subjected to microwave irradiation in resonance with the Zeeman splitting in Cu, the inverted spin-population relaxes through stimulated spin-flip photon emission, detected as peaks in the point contact resistance. Resonant spin-flip photon absorption is detected as resistance minima, corresponding to sourcing the photon field energy into the electrical circuit. These results demonstrate fundamental mechanisms that are potentially useful for designing metallic spin-based lasers.
1102.2167v1
2011-02-14
Edge effect on resistance scaling rules in graphene nanostructures
We report an experimental investigation of the edge effect on the room-temperature transport in graphene nanoribbon and graphene sheet (both single-layer and bilayer). By measuring the resistance scaling behaviors at both low and high carrier densities, we show that the transport of single-layer nanoribbons lies in a strong localization regime, which can be attributed to an edge effect. We find that this edge effect can be weakened by enlarging the width, decreasing the carrier densities or adding an extra layer. From graphene nanoribbon to graphene sheet, the data show a dimensional crossover of the transport regimes possibly due to the drastic change of the edge effect.
1102.2681v1
2011-02-20
In situ TEM investigation of oxygen migration as a key mechanism for resistive switching in Pr0.7Ca0.3MnO3
Low temperature growth Pr0.7Ca0.3MnO3 (PCMO) thin film showed high performance in electric field induced resistance switching (RS). To understand the micro-mechanism of RS in Metal/PCMO/Metal devices, structure evolution of PCMO under external electric field monitored inside transmission electron microscope (TEM) were performed. Evolution of the modulation stripe in as-grown PCMO sample was investigated when applying electric field. The new-generated modulation stripe gradually disappeared. These results indicate that oxygen ion migration plays a key role in RS.
1102.4044v3
2011-05-19
Enhancement of the Superconducting Transition Temperature with Hydrostatic Pressure in Ca_{3}Ir_{4}Sn_{13} Single Crystals
We report high pressure magnetic susceptibility and electrical resistivity measurements on Ca_{3}Ir_{4}Sn_{13} single crystals up to 60 kbar. These measurements allow us to follow the evolution of the superconducting critical temperature T_c, the resistivity anomaly temperature T*, the superconducting coherence length and the Fermi velocity under pressure. The pressure-temperature phase diagram constructed for Ca_{3}Ir_{4}Sn_{13} shows a dome-shaped pressure dependence of T_c. The initial rise in T_c, which is accompanied by a decrease in T*, is consistent with a reduction in the partial gapping of the Fermi surface under pressure.
1105.3941v1
2011-05-24
Low Bias Negative Differential Resistance in Graphene Nanoribbon Superlattices
We theoretically investigate negative differential resistance (NDR) for ballistic transport in semiconducting armchair graphene nanoribbon (aGNR) superlattices (5 to 20 barriers) at low bias voltages V_SD < 500 mV. We combine the graphene Dirac Hamiltonian with the Landauer-B\"uttiker formalism to calculate the current I_SD through the system. We find three distinct transport regimes in which NDR occurs: (i) a "classical" regime for wide layers, through which the transport across band gaps is strongly suppressed, leading to alternating regions of nearly unity and zero transmission probabilities as a function of V_SD due to crossing of band gaps from different layers; (ii) a quantum regime dominated by superlattice miniband conduction, with current suppression arising from the misalignment of miniband states with increasing V_SD; and (iii) a Wannier-Stark ladder regime with current peaks occurring at the crossings of Wannier-Stark rungs from distinct ladders. We observe NDR at voltage biases as low as 10 mV with a high current density, making the aGNR superlattices attractive for device applications.
1105.4850v2
2011-10-22
Pressure Induced Metallization of BaMn2As2
The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T) shows a negative co-efficient of resistivity under pressure upto 3.2 GPa. The occurrence of an insulator to metal transition (MIT) in an external P ~4.5 GPa is indicated by a change in the temperature co-efficient in the rho(T) data at ~36 K . However complete metallization in entire temperature range is seen at a P~5.8 GPa. High pressure XRD studies carried out at room temperature also shows an anomaly in the pressure versus volume curve around P ~ 5 GPa, without a change in crystal structure, indicative of an electronic transition. Further, a clear precipitous drop in rho(T) at ~17 K is seen for P ~5.8 GPa which suggests the possibility of the system going over to a superconducting ground state.
1110.4969v2
2011-10-24
Two coupled Josephson junctions: dc voltage controlled by biharmonic current
We study transport properties of two Josephson junctions coupled by an external shunt resistance. One of the junction (say, the first) is driven by an unbiased ac current consisting of two harmonics. The device can rectify the ac current yielding a dc voltage across the first junction. For some values of coupling strength, controlled by an external shunt resistance, a dc voltage across the second junction can be generated. By variation of system parameters like the relative phase or frequency of two harmonics, one can conveniently manipulate both voltages with high efficiency, e.g., changing the dc voltages across the first and second junctions from positive to negative values and vice versa.
1110.5287v3
2011-10-31
Resistivity saturation in a weakly interacting 2D Fermi liquid at intermediate temperatures
We report a highly unusual temperature dependence in the magnetoresistance of a weakly interacting high mobility 2D electron gas (2DEG) under a parallel magnetic field and when the current is perpendicular to the field. While the linear temperature dependence below 10 K and the exponential temperature dependence above 40 K agree with existing theory of electron-phonon scattering, a field induced resistivity saturation behaviour characterized by an almost complete suppression of the temperature dependence is observed from approximately 20 to 40 K, which is in sharp contrast to the phenomenology observed when the current is parallel to the field. Possible origins of this intriguing intermediate temperature phenomenon are discussed.
1111.0011v2
2011-11-14
Anomalous resistivity and the electron-polaron effect in the two-band Hubbard model with one narrow band
We search for anomalous normal and superconductive behavior in the two-band Hubbard model with one narrow band. We analyze the influence of electron-polaron effect and Altshuler-Aronov effect on effective mass enhancement and scattering times of heavy and light components in the clean case. We find anomalous behavior of resistivity at high temperatures $T>W_{h}^{*}$ both in 3D and 2D situation. The SC instability in the model is governed by enhanced Kohn-Luttinger effect for p-wave pairing of heavy electrons via polarization of light electrons.
1111.3135v1
2011-12-07
Low carrier concentration crystals of the topological insulator Bi$_2$Te$_2$Se
We report the characterization of Bi$_2$Te$_2$Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal growth techniques. X-ray diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity ($> 1 \mathrm{\Omega cm}$) and low carrier concentration ($\sim 5\times 10^{16}$/cm$^3$) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.
1112.1648v1
2011-12-22
Field induced quantum-Hall ferromagnetism in suspended bilayer graphene
We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase developing at the charge neutrality point.
1112.5368v2