paper pdf | material stringclasses 22
values | property_name stringclasses 100
values | property_value stringlengths 1 34 |
|---|---|---|---|
Ru7B3 | chemical formula | Ru7B3 | |
Ru7B3 | shape | 3.0 | |
Ru7B3 | common name of structure | Th7Fe3 | |
Ru7B3 | space group | P6<3>mc | |
Ru7B3 | international table number | 186 | |
Ru7B3 | lattice constant a | 7.441 | |
Ru7B3 | lattice constant c | 4.7 | |
Ru7B3 | Tc from susceptibility measurement | 2.8 | |
Ru7B3 | Tc (of this sample) recommended | 2.8 | |
Ru7B3 | method of Hc1 derivation | linear M-H curve | |
Ru7B3 | Hc1 at 0 K for single crystal for H //ab-plane | 53.0 | |
Ru7B3 | Hc1 at 0 K for single crystal for H //c-axis | 68.0 | |
Ru7B3 | method of Hc2 derivation | SP-heat | |
Ru7B3 | Hc2 at 0 K for single crystal for H //ab-plane | 1.72 | |
Ru7B3 | Hc2 at 0 K for single crystal for H //c-axis | 1.58 | |
Ru7B3 | method of dHc2/dT derivation | SP-heat | |
Ru7B3 | -slope in Hc2 vs T at Tc for single crystal for H //ab-plane | 0.782 | |
Ru7B3 | -slope in Hc2 vs T at Tc for single crystal for H //c-axis | 0.707 | |
Ru7B3 | method of COHERE derivation | from Hc2 | |
Ru7B3 | coherence length at 0 K for single crystal for H //ab-plane | 138.0 | |
Ru7B3 | coherence length at 0 K for single crystal for H ŀab-plane | 144.0 | |
Ru7B3 | method of PENET derivation | G-L theory, Hc(0) | |
Ru7B3 | penetration depth at 0 K for single crystal for H //ab-plane | 3520.0 | |
Ru7B3 | penetration depth at 0 K for single crystal for HÅ€ab-plane | 3110.0 | |
Ru7B3 | energy gap at 0 K , delta(0) | 0.38 | |
Ru7B3 | normarized energy gap at 0 K , 2delta(0)/kTc | 3.3 | |
Ru7B3 | method of measuring energy gap | 14.0 | |
Ru7B3 | coefficient of electronic specific heat | 43.7 | |
Ru7B3 | Debye temperature | 640.0 | |
Ru7B3 | method for derivation of Debye temperature | SP-heat | |
Ru7B3 | resistivity at 4.2 K for single crystal for J//ab-plane | 0.014 | |
Ru7B3 | resistivity at 4.2 K for single crystal for J//c-axis | 0.026 | |
Ru7B3 | resistivity at RT for single crystal for J//ab-plane | 0.055 | |
Ru7B3 | resistivity at RT for single crystal for J//c-axis | 0.097 | |
Ru7B3 | chemical formula | Ru7B3 | |
Ru7B3 | shape | 1.0 | |
Ru7B3 | common name of structure | Th7Fe3 | |
Ru7B3 | space group | P6<3>mc | |
Ru7B3 | international table number | 186 | |
Ru7B3 | Tc from susceptibility measurement | 3.3 | |
Ru7B3 | Tc (of this sample) recommended | 3.3 | |
beta-IrSn4 | chemical formula | Ir1Sn4 | |
beta-IrSn4 | shape | 3.0 | |
beta-IrSn4 | common name of structure | MoSn4 | |
beta-IrSn4 | space group | I4<1>/acd | |
beta-IrSn4 | lattice constant a | 6.308 | |
beta-IrSn4 | lattice constant c | 22.739 | |
beta-IrSn4 | transition temperature (R = 0) | 0.84 | |
beta-IrSn4 | transition temperature (mid point) | 0.93 | |
beta-IrSn4 | transition temperature (R = 100%) | 1.0 | |
beta-IrSn4 | Tc from susceptibility measurement | 0.9 | |
beta-IrSn4 | transition width for resistive transition | 0.15 | |
beta-IrSn4 | Tc (of this sample) recommended | 0.93 | |
beta-IrSn4 | method of Hc1 derivation | M-H curve | |
beta-IrSn4 | Hc1 at given temperature for poly crystal | 3.0 | |
beta-IrSn4 | measuring temperature | 0.5 | |
beta-IrSn4 | method of Hc2 derivation | RES, WHH | |
beta-IrSn4 | Hc2 at 0 K for poly crystal | 8.0 | |
beta-IrSn4 | Hc2 at given temperature for poly crystal | 6.8 | |
beta-IrSn4 | -slope in Hc2 vs T at Tc for single crystal | 9.83 | |
beta-IrSn4 | method of COHERE derivation | Hc2, spherical Fermi surface model | |
beta-IrSn4 | coherence length at 0 K for poly crystal | 1930.0 | |
beta-IrSn4 | method of PENET derivation | Hc2, spherical Fermi surface model | |
beta-IrSn4 | penetration depth at 0 K for poly crystal | 1150.0 | |
beta-IrSn4 | normarized energy gap at 0 K , 2delta(0)/kTc | 3.55 | |
beta-IrSn4 | method of measuring energy gap | 14.0 | |
beta-IrSn4 | coefficient of electronic specific heat | 5.2 | |
beta-IrSn4 | Debye temperature | 221.0 | |
beta-IrSn4 | method for derivation of Debye temperature | SP | |
beta-IrSn4 | resistivity at normal-T for poly crystal | 3.0 | |
beta-IrSn4 | resistivity at RT for poly crystal | 80.0 | |
beta-IrSn4 | Hall coefficient for single, H//c-axis | 8.95e-10 | |
beta-IrSn4 | carrier density at 300 K | 6.980000000000001e+27 | |
beta-IrSn4 | raw materials | Ir(4N),Sn(5N) | |
beta-IrSn4 | chemical formula | Ir1Sn4 | |
beta-IrSn4 | shape | 3.0 | |
beta-IrSn4 | common name of structure | MoSn4 | |
beta-IrSn4 | space group | I4<1>/acd | |
beta-IrSn4 | lattice constant a | 6.308 | |
beta-IrSn4 | lattice constant c | 22.739 | |
beta-IrSn4 | transition temperature (R = 0) | 0.84 | |
beta-IrSn4 | transition temperature (mid point) | 0.93 | |
beta-IrSn4 | transition temperature (R = 100%) | 1.0 | |
beta-IrSn4 | transition width for resistive transition | 0.15 | |
beta-IrSn4 | Tc (of this sample) recommended | 0.93 | |
beta-IrSn4 | method of Hc1 derivation | M-H curve | |
beta-IrSn4 | Hc1 at given temperature for poly crystal | 3.0 | |
beta-IrSn4 | measuring temperature | 0.5 | |
beta-IrSn4 | method of Hc2 derivation | SP,RES,WHH | |
beta-IrSn4 | Hc2 at 0 K for poly crystal | 8.1 | |
beta-IrSn4 | method of dHc2/dT derivation | RES,SP | |
beta-IrSn4 | -slope in Hc2 vs T at Tc for single crystal | 9.83 | |
beta-IrSn4 | normarized energy gap at 0 K , 2delta(0)/kTc | 3.55 | |
beta-IrSn4 | method of measuring energy gap | 14.0 | |
beta-IrSn4 | coefficient of electronic specific heat | 5.2 | |
beta-IrSn4 | Debye temperature | 221.0 | |
beta-IrSn4 | method for derivation of Debye temperature | SP | |
beta-IrSn4 | resistivity at normal-T for poly crystal | 3.0 | |
beta-IrSn4 | resistivity at RT for poly crystal | 80.0 | |
beta-IrSn4 | Hall coefficient at 300 K | 8.95e-10 |
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