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int64 0 2k | instruction stringlengths 945 985 | output stringlengths 5.12k 5.16k |
|---|---|---|
1,400 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.01 micrometers and it i... | (define tox 0.005)
(define Lgs 0.43)
(define Lgl 0.69)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.01)
(define Ld 0.01)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,401 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.87 micrometers and it i... | (define tox 0.009)
(define Lgs 0.52)
(define Lgl 0.48)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.87)
(define Ld 0.87)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,402 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.93 micrometers and it is do... | (define tox 0.002)
(define Lgs 0.77)
(define Lgl 0.6)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.93)
(define Ld 0.93)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,403 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.54 micrometers and it... | (define tox 0.008)
(define Lgs 0.56)
(define Lgl 0.81)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.54)
(define Ld 0.54)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,404 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.43 micrometers and it... | (define tox 0.002)
(define Lgs 0.62)
(define Lgl 0.77)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.43)
(define Ld 0.43)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,405 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.86 micrometers and it i... | (define tox 0.009)
(define Lgs 0.07)
(define Lgl 0.97)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.86)
(define Ld 0.86)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,406 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.97 micrometers and it i... | (define tox 0.003)
(define Lgs 0.57)
(define Lgl 0.92)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.97)
(define Ld 0.97)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
1,407 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.79 micrometers and it i... | (define tox 0.005)
(define Lgs 0.06)
(define Lgl 0.31)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.79)
(define Ld 0.79)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,408 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.26 micrometers and it... | (define tox 0.003)
(define Lgs 0.99)
(define Lgl 0.46)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.26)
(define Ld 0.26)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,409 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.37 micrometers and it... | (define tox 0.01)
(define Lgs 0.81)
(define Lgl 0.85)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.37)
(define Ld 0.37)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,410 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.33 micrometers and it is d... | (define tox 0.007)
(define Lgs 0.99)
(define Lgl 0.95)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.33)
(define Ld 0.33)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,411 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.44 micrometers and it i... | (define tox 0.005)
(define Lgs 0.21)
(define Lgl 0.48)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.44)
(define Ld 0.44)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,412 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.6 micrometers and it ... | (define tox 0.01)
(define Lgs 0.09)
(define Lgl 0.58)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.6)
(define Ld 0.6)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGat... |
1,413 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.14 micrometers and it i... | (define tox 0.003)
(define Lgs 0.77)
(define Lgl 0.4)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.14)
(define Ld 0.14)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,414 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.38 micrometers and it is do... | (define tox 0.007)
(define Lgs 0.51)
(define Lgl 0.77)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.38)
(define Ld 0.38)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,415 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.13 micrometers and it... | (define tox 0.008)
(define Lgs 0.15)
(define Lgl 0.01)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.13)
(define Ld 0.13)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,416 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.37 micrometers and it i... | (define tox 0.009)
(define Lgs 0.63)
(define Lgl 0.73)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.37)
(define Ld 0.37)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,417 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.93 micrometers and it is d... | (define tox 0.002)
(define Lgs 0.08)
(define Lgl 0.28)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.93)
(define Ld 0.93)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,418 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.83 micrometers and it is do... | (define tox 0.007)
(define Lgs 0.97)
(define Lgl 0.15)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.83)
(define Ld 0.83)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,419 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.36 micrometers and it... | (define tox 0.008)
(define Lgs 0.07)
(define Lgl 0.27)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.36)
(define Ld 0.36)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,420 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.25 micrometers and it... | (define tox 0.004)
(define Lgs 0.69)
(define Lgl 0.49)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.25)
(define Ld 0.25)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,421 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.2 micrometers and it is do... | (define tox 0.006)
(define Lgs 0.78)
(define Lgl 0.26)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.2)
(define Ld 0.2)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
1,422 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.63 micrometers and it is d... | (define tox 0.007)
(define Lgs 0.35)
(define Lgl 0.78)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.63)
(define Ld 0.63)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,423 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.68 micrometers and it... | (define tox 0.01)
(define Lgs 0.95)
(define Lgl 0.07)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.68)
(define Ld 0.68)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGat... |
1,424 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.62 micrometers and it... | (define tox 0.006)
(define Lgs 0.12)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.62)
(define Ld 0.62)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,425 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.99 micrometers and it... | (define tox 0.004)
(define Lgs 0.08)
(define Lgl 0.58)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.99)
(define Ld 0.99)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,426 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.08 micrometers and it i... | (define tox 0.009)
(define Lgs 0.56)
(define Lgl 0.05)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.08)
(define Ld 0.08)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,427 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.28 micrometers and it is d... | (define tox 0.008)
(define Lgs 0.8)
(define Lgl 0.99)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.28)
(define Ld 0.28)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,428 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.21 micrometers and it is do... | (define tox 0.001)
(define Lgs 0.3)
(define Lgl 0.83)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.21)
(define Ld 0.21)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,429 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.38 micrometers and it i... | (define tox 0.004)
(define Lgs 0.34)
(define Lgl 0.89)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.38)
(define Ld 0.38)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,430 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.18 micrometers and it... | (define tox 0.007)
(define Lgs 0.95)
(define Lgl 0.62)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.18)
(define Ld 0.18)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,431 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.5 micrometers and it is do... | (define tox 0.009)
(define Lgs 0.41)
(define Lgl 0.96)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.5)
(define Ld 0.5)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
1,432 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.06 micrometers and it is d... | (define tox 0.008)
(define Lgs 0.66)
(define Lgl 0.87)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.06)
(define Ld 0.06)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,433 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.23 micrometers and it is do... | (define tox 0.004)
(define Lgs 0.97)
(define Lgl 0.36)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.23)
(define Ld 0.23)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,434 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.66 micrometers and it is d... | (define tox 0.004)
(define Lgs 0.53)
(define Lgl 0.46)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.66)
(define Ld 0.66)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
1,435 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.7 micrometers and it is dop... | (define tox 0.003)
(define Lgs 0.04)
(define Lgl 0.03)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.7)
(define Ld 0.7)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
1,436 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.38 micrometers and it is do... | (define tox 0.003)
(define Lgs 0.8)
(define Lgl 0.11)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.38)
(define Ld 0.38)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,437 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.7 micrometers and it ... | (define tox 0.009)
(define Lgs 0.7)
(define Lgl 0.95)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.7)
(define Ld 0.7)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGat... |
1,438 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.04 micrometers and it i... | (define tox 0.002)
(define Lgs 0.35)
(define Lgl 0.08)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.04)
(define Ld 0.04)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,439 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.72 micrometers and it i... | (define tox 0.004)
(define Lgs 0.84)
(define Lgl 0.94)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.72)
(define Ld 0.72)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,440 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.55 micrometers and it i... | (define tox 0.001)
(define Lgs 0.54)
(define Lgl 0.78)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.55)
(define Ld 0.55)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,441 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.28 micrometers and it i... | (define tox 0.009)
(define Lgs 0.82)
(define Lgl 0.53)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.28)
(define Ld 0.28)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,442 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.03 micrometers and it i... | (define tox 0.008)
(define Lgs 0.16)
(define Lgl 0.71)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.03)
(define Ld 0.03)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,443 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is do... | (define tox 0.005)
(define Lgs 0.29)
(define Lgl 0.08)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.35)
(define Ld 0.35)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,444 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.18 micrometers and it i... | (define tox 0.009)
(define Lgs 0.12)
(define Lgl 0.81)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.18)
(define Ld 0.18)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,445 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.71 micrometers and it i... | (define tox 0.01)
(define Lgs 0.91)
(define Lgl 0.73)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,446 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.85 micrometers and it i... | (define tox 0.003)
(define Lgs 0.58)
(define Lgl 0.34)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.85)
(define Ld 0.85)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,447 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.17 micrometers and it is d... | (define tox 0.01)
(define Lgs 0.13)
(define Lgl 0.17)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.17)
(define Ld 0.17)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGat... |
1,448 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.2 micrometers and it is... | (define tox 0.001)
(define Lgs 0.41)
(define Lgl 0.15)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.2)
(define Ld 0.2)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
1,449 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.86 micrometers and it i... | (define tox 0.001)
(define Lgs 0.34)
(define Lgl 0.52)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.86)
(define Ld 0.86)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,450 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.57 micrometers and it i... | (define tox 0.004)
(define Lgs 0.82)
(define Lgl 0.66)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.57)
(define Ld 0.57)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,451 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.74 micrometers and it is d... | (define tox 0.002)
(define Lgs 0.64)
(define Lgl 0.94)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,452 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.67 micrometers and it i... | (define tox 0.004)
(define Lgs 0.32)
(define Lgl 0.44)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.67)
(define Ld 0.67)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,453 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.26 micrometers and it i... | (define tox 0.001)
(define Lgs 0.94)
(define Lgl 0.95)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.26)
(define Ld 0.26)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,454 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.16 micrometers and it i... | (define tox 0.009)
(define Lgs 0.32)
(define Lgl 0.3)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,455 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.02 micrometers and it is do... | (define tox 0.006)
(define Lgs 0.16)
(define Lgl 0.48)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.02)
(define Ld 0.02)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,456 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.52 micrometers and it is d... | (define tox 0.01)
(define Lgs 0.39)
(define Lgl 0.86)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.52)
(define Ld 0.52)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,457 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.5 micrometers and it is... | (define tox 0.002)
(define Lgs 0.73)
(define Lgl 0.89)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.5)
(define Ld 0.5)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
1,458 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is do... | (define tox 0.006)
(define Lgs 0.42)
(define Lgl 0.82)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.35)
(define Ld 0.35)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,459 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.55 micrometers and it i... | (define tox 0.006)
(define Lgs 0.76)
(define Lgl 0.42)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.55)
(define Ld 0.55)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,460 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.07 micrometers and it i... | (define tox 0.007)
(define Lgs 0.56)
(define Lgl 0.63)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.07)
(define Ld 0.07)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,461 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.05 micrometers and it... | (define tox 0.001)
(define Lgs 0.45)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.05)
(define Ld 0.05)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,462 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.04 micrometers and it is d... | (define tox 0.006)
(define Lgs 0.14)
(define Lgl 0.65)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.04)
(define Ld 0.04)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,463 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.07 micrometers and it... | (define tox 0.003)
(define Lgs 0.68)
(define Lgl 0.23)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.07)
(define Ld 0.07)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,464 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.58 micrometers and it... | (define tox 0.003)
(define Lgs 0.2)
(define Lgl 0.61)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.58)
(define Ld 0.58)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,465 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.68 micrometers and it is do... | (define tox 0.008)
(define Lgs 0.57)
(define Lgl 0.65)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.68)
(define Ld 0.68)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,466 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.8 micrometers and it is... | (define tox 0.002)
(define Lgs 0.23)
(define Lgl 0.17)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.8)
(define Ld 0.8)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
1,467 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.71 micrometers and it is d... | (define tox 0.004)
(define Lgs 0.07)
(define Lgl 0.31)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,468 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.1 micrometers and it ... | (define tox 0.001)
(define Lgs 0.15)
(define Lgl 0.73)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.1)
(define Ld 0.1)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
1,469 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.84 micrometers and it i... | (define tox 0.006)
(define Lgs 0.09)
(define Lgl 0.21)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.84)
(define Ld 0.84)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,470 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.69 micrometers and it... | (define tox 0.007)
(define Lgs 0.27)
(define Lgl 0.25)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.69)
(define Ld 0.69)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,471 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.46 micrometers and it... | (define tox 0.006)
(define Lgs 0.11)
(define Lgl 0.13)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.46)
(define Ld 0.46)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,472 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.73 micrometers and it i... | (define tox 0.002)
(define Lgs 0.61)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.73)
(define Ld 0.73)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,473 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.07 micrometers and it i... | (define tox 0.002)
(define Lgs 0.55)
(define Lgl 0.28)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.07)
(define Ld 0.07)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
1,474 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.15 micrometers and it... | (define tox 0.003)
(define Lgs 0.54)
(define Lgl 0.87)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.15)
(define Ld 0.15)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,475 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.38 micrometers and it... | (define tox 0.008)
(define Lgs 0.03)
(define Lgl 0.2)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.38)
(define Ld 0.38)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,476 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.68 micrometers and it i... | (define tox 0.004)
(define Lgs 0.42)
(define Lgl 0.49)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.68)
(define Ld 0.68)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,477 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.34 micrometers and it is d... | (define tox 0.009)
(define Lgs 0.22)
(define Lgl 0.24)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.34)
(define Ld 0.34)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,478 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.19 micrometers and it i... | (define tox 0.009)
(define Lgs 0.3)
(define Lgl 0.68)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.19)
(define Ld 0.19)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,479 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.12 micrometers and it i... | (define tox 0.008)
(define Lgs 0.33)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.12)
(define Ld 0.12)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,480 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.99 micrometers and it i... | (define tox 0.002)
(define Lgs 0.13)
(define Lgl 0.81)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.99)
(define Ld 0.99)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,481 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.95 micrometers and it i... | (define tox 0.01)
(define Lgs 1.0)
(define Lgl 0.49)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.95)
(define Ld 0.95)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
1,482 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.41 micrometers and it is do... | (define tox 0.006)
(define Lgs 0.46)
(define Lgl 0.46)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.41)
(define Ld 0.41)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,483 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.81 micrometers and it i... | (define tox 0.003)
(define Lgs 0.93)
(define Lgl 0.98)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.81)
(define Ld 0.81)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,484 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.79 micrometers and it is do... | (define tox 0.004)
(define Lgs 0.88)
(define Lgl 0.58)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.79)
(define Ld 0.79)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,485 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.58 micrometers and it i... | (define tox 0.002)
(define Lgs 0.45)
(define Lgl 0.59)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.58)
(define Ld 0.58)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,486 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.32 micrometers and it i... | (define tox 0.006)
(define Lgs 0.12)
(define Lgl 0.42)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.32)
(define Ld 0.32)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,487 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.74 micrometers and it i... | (define tox 0.006)
(define Lgs 0.16)
(define Lgl 0.09)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,488 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.14 micrometers and it... | (define tox 0.001)
(define Lgs 0.42)
(define Lgl 0.89)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.14)
(define Ld 0.14)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,489 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.25 micrometers and it is do... | (define tox 0.008)
(define Lgs 0.85)
(define Lgl 0.96)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.25)
(define Ld 0.25)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,490 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.26 micrometers and it i... | (define tox 0.007)
(define Lgs 0.99)
(define Lgl 0.56)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.26)
(define Ld 0.26)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,491 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.77 micrometers and it... | (define tox 0.008)
(define Lgs 0.73)
(define Lgl 0.75)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.77)
(define Ld 0.77)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,492 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.99 micrometers and it is do... | (define tox 0.001)
(define Lgs 0.71)
(define Lgl 0.42)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.99)
(define Ld 0.99)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,493 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.81 micrometers and it is do... | (define tox 0.006)
(define Lgs 0.26)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.81)
(define Ld 0.81)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,494 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.5 micrometers and it is do... | (define tox 0.006)
(define Lgs 0.09)
(define Lgl 0.67)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.5)
(define Ld 0.5)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGa... |
1,495 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.73 micrometers and it... | (define tox 0.008)
(define Lgs 0.79)
(define Lgl 0.9)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.73)
(define Ld 0.73)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XG... |
1,496 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.22 micrometers and it is d... | (define tox 0.009)
(define Lgs 0.96)
(define Lgl 0.36)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.22)
(define Ld 0.22)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,497 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.24 micrometers and it is d... | (define tox 0.001)
(define Lgs 0.03)
(define Lgl 0.44)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.24)
(define Ld 0.24)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,498 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.92 micrometers and it i... | (define tox 0.007)
(define Lgs 0.94)
(define Lgl 0.32)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.92)
(define Ld 0.92)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
1,499 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.65 micrometers and it is d... | (define tox 0.005)
(define Lgs 0.51)
(define Lgl 0.35)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.65)
(define Ld 0.65)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define X... |
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