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int64 0 2k | instruction stringlengths 945 985 | output stringlengths 5.12k 5.16k |
|---|---|---|
200 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 778119281365722464256 cm^-3. The short gate region is of the material Germanium with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 262662278968364335104 cm^-3. The long gate region is of the material Germanium with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 39070319814086320128 cm^-3. The drain region is of the material Silicon with a length of 0.62 micrometers and it is doped with Boron at a concentration of 919506985600810352640 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.005)
(define Lgs 0.54)
(define Lgl 0.53)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.62)
(define Ld 0.62)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
778119281365722464256
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
262662278968364335104
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
39070319814086320128
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
919506985600810352640
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
201 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 716382893394178211840 cm^-3. The short gate region is of the material Diamond with a length of 0.67 micrometers and it is doped with Boron at a concentration of 779148139524764336128 cm^-3. The long gate region is of the material Diamond with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 866048687334163480576 cm^-3. The drain region is of the material SiGe with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 909345224604257878016 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.003)
(define Lgs 0.67)
(define Lgl 0.28)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.86)
(define Ld 0.86)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
716382893394178211840
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
779148139524764336128
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
866048687334163480576
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
909345224604257878016
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
202 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 660183154025072427008 cm^-3. The short gate region is of the material Germanium with a length of 0.05 micrometers and it is doped with Phosphorus at a concentration of 847961778009557041152 cm^-3. The long gate region is of the material Diamond with a length of 0.55 micrometers and it is doped with Boron at a concentration of 944132025088838991872 cm^-3. The drain region is of the material GaN with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 663828827522956918784 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.005)
(define Lgs 0.05)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.78)
(define Ld 0.78)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
660183154025072427008
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
847961778009557041152
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
944132025088838991872
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
663828827522956918784
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
203 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 511559311884722372608 cm^-3. The short gate region is of the material Germanium with a length of 0.19 micrometers and it is doped with Phosphorus at a concentration of 31829090608390569984 cm^-3. The long gate region is of the material SiGe with a length of 0.21 micrometers and it is doped with Boron at a concentration of 441656314414511685632 cm^-3. The drain region is of the material SiGe with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 897962896517081464832 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.002)
(define Lgs 0.19)
(define Lgl 0.21)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.35)
(define Ld 0.35)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
511559311884722372608
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
31829090608390569984
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
441656314414511685632
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
897962896517081464832
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
204 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.65 micrometers and it is doped with Boron at a concentration of 336938357104856399872 cm^-3. The short gate region is of the material Germanium with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 335164786090635558912 cm^-3. The long gate region is of the material Silicon with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 508302609464663080960 cm^-3. The drain region is of the material SiGe with a length of 0.65 micrometers and it is doped with Boron at a concentration of 146225273691380678656 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.001)
(define Lgs 0.67)
(define Lgl 0.42)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.65)
(define Ld 0.65)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
336938357104856399872
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
335164786090635558912
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
508302609464663080960
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
146225273691380678656
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
205 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.25 micrometers and it is doped with Boron at a concentration of 917601920744723185664 cm^-3. The short gate region is of the material GaN with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 852903744205485506560 cm^-3. The long gate region is of the material SiGe with a length of 0.55 micrometers and it is doped with Boron at a concentration of 17858793133555638272 cm^-3. The drain region is of the material Silicon with a length of 0.25 micrometers and it is doped with Phosphorus at a concentration of 283216801874999246848 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.006)
(define Lgs 0.71)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.25)
(define Ld 0.25)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
917601920744723185664
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
852903744205485506560
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
17858793133555638272
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
283216801874999246848
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
206 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 207255440345713115136 cm^-3. The short gate region is of the material SiGe with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 284504175278476132352 cm^-3. The long gate region is of the material Diamond with a length of 0.87 micrometers and it is doped with Boron at a concentration of 414961171472169959424 cm^-3. The drain region is of the material SiGe with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 293829835924918894592 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.009)
(define Lgs 0.25)
(define Lgl 0.87)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.02)
(define Ld 0.02)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
207255440345713115136
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
284504175278476132352
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
414961171472169959424
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
293829835924918894592
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
207 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 309741284892687335424 cm^-3. The short gate region is of the material SiGe with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 993906480867514646528 cm^-3. The long gate region is of the material GaN with a length of 0.92 micrometers and it is doped with Boron at a concentration of 36354799549559791616 cm^-3. The drain region is of the material Germanium with a length of 0.23 micrometers and it is doped with Arsenic at a concentration of 302413345436413460480 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.008)
(define Lgs 0.03)
(define Lgl 0.92)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.23)
(define Ld 0.23)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
309741284892687335424
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
993906480867514646528
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
36354799549559791616
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
302413345436413460480
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
208 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 953180540153221611520 cm^-3. The short gate region is of the material Silicon with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 148494455152568401920 cm^-3. The long gate region is of the material SiGe with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 114272057860990746624 cm^-3. The drain region is of the material Germanium with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 356851546690874507264 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.009)
(define Lgs 0.41)
(define Lgl 0.14)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
953180540153221611520
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
148494455152568401920
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
114272057860990746624
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
356851546690874507264
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
209 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 200927454851736764416 cm^-3. The short gate region is of the material Silicon with a length of 0.76 micrometers and it is doped with Boron at a concentration of 128683842342248398848 cm^-3. The long gate region is of the material Diamond with a length of 0.42 micrometers and it is doped with Boron at a concentration of 942829752896110985216 cm^-3. The drain region is of the material SiGe with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 534069190915673030656 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.005)
(define Lgs 0.76)
(define Lgl 0.42)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.6)
(define Ld 0.6)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
200927454851736764416
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
128683842342248398848
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
942829752896110985216
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
534069190915673030656
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
210 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 912986354132037926912 cm^-3. The short gate region is of the material Germanium with a length of 0.98 micrometers and it is doped with Phosphorus at a concentration of 918906225018980401152 cm^-3. The long gate region is of the material Silicon with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 578396057625408438272 cm^-3. The drain region is of the material SiGe with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 157961004429583908864 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.004)
(define Lgs 0.98)
(define Lgl 0.42)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.39)
(define Ld 0.39)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
912986354132037926912
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
918906225018980401152
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
578396057625408438272
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
157961004429583908864
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
211 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 661065956976427008000 cm^-3. The short gate region is of the material Diamond with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 991149209963083464704 cm^-3. The long gate region is of the material Diamond with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 367685415176728346624 cm^-3. The drain region is of the material GaN with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 134485655906790621184 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.001)
(define Lgs 0.81)
(define Lgl 0.03)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.54)
(define Ld 0.54)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
661065956976427008000
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
991149209963083464704
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
367685415176728346624
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
134485655906790621184
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
212 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.56 micrometers and it is doped with Boron at a concentration of 360526807523585032192 cm^-3. The short gate region is of the material Silicon with a length of 0.67 micrometers and it is doped with Boron at a concentration of 948652762826007642112 cm^-3. The long gate region is of the material Germanium with a length of 0.82 micrometers and it is doped with Boron at a concentration of 284392298109104128000 cm^-3. The drain region is of the material GaN with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 246546526499639099392 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.67)
(define Lgl 0.82)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.56)
(define Ld 0.56)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
360526807523585032192
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
948652762826007642112
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
284392298109104128000
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
246546526499639099392
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
213 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 339631214305415921664 cm^-3. The short gate region is of the material SiGe with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 984665800816564633600 cm^-3. The long gate region is of the material GaN with a length of 0.13 micrometers and it is doped with Arsenic at a concentration of 697321035891946815488 cm^-3. The drain region is of the material Germanium with a length of 0.66 micrometers and it is doped with Arsenic at a concentration of 806315520785555390464 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.005)
(define Lgs 0.13)
(define Lgl 0.13)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.66)
(define Ld 0.66)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
339631214305415921664
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
984665800816564633600
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
697321035891946815488
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
806315520785555390464
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
214 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 468416411729708187648 cm^-3. The short gate region is of the material Silicon with a length of 0.54 micrometers and it is doped with Phosphorus at a concentration of 315331877152496025600 cm^-3. The long gate region is of the material SiGe with a length of 0.75 micrometers and it is doped with Boron at a concentration of 327736605027413786624 cm^-3. The drain region is of the material Germanium with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 469159688403578257408 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.005)
(define Lgs 0.54)
(define Lgl 0.75)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.34)
(define Ld 0.34)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
468416411729708187648
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
315331877152496025600
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
327736605027413786624
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
469159688403578257408
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
215 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 565048903074315501568 cm^-3. The short gate region is of the material Diamond with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 472197763978067181568 cm^-3. The long gate region is of the material SiGe with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 411935901163957649408 cm^-3. The drain region is of the material Silicon with a length of 0.51 micrometers and it is doped with Boron at a concentration of 11579487716539107328 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.007)
(define Lgs 0.62)
(define Lgl 0.16)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.51)
(define Ld 0.51)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
565048903074315501568
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
472197763978067181568
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
411935901163957649408
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
11579487716539107328
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
216 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 411504006479870689280 cm^-3. The short gate region is of the material Diamond with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 507850397480151547904 cm^-3. The long gate region is of the material Germanium with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 364115225357394378752 cm^-3. The drain region is of the material GaN with a length of 0.32 micrometers and it is doped with Boron at a concentration of 477223440183424450560 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.003)
(define Lgs 0.31)
(define Lgl 0.18)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.32)
(define Ld 0.32)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
411504006479870689280
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
507850397480151547904
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
364115225357394378752
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
477223440183424450560
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
217 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.26 micrometers and it is doped with Boron at a concentration of 54622541134605647872 cm^-3. The short gate region is of the material Silicon with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 944332332505167953920 cm^-3. The long gate region is of the material SiGe with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 267720899010886074368 cm^-3. The drain region is of the material Germanium with a length of 0.26 micrometers and it is doped with Boron at a concentration of 744577061870815805440 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.004)
(define Lgs 0.03)
(define Lgl 0.16)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.26)
(define Ld 0.26)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
54622541134605647872
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
944332332505167953920
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
267720899010886074368
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
744577061870815805440
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
218 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.31 micrometers and it is doped with Phosphorus at a concentration of 530994028451316891648 cm^-3. The short gate region is of the material SiGe with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 772199877925332451328 cm^-3. The long gate region is of the material GaN with a length of 0.68 micrometers and it is doped with Boron at a concentration of 521639967708649357312 cm^-3. The drain region is of the material SiGe with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 377572096081706090496 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.007)
(define Lgs 0.71)
(define Lgl 0.68)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.31)
(define Ld 0.31)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
530994028451316891648
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
772199877925332451328
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
521639967708649357312
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
377572096081706090496
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
219 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 869429929726204837888 cm^-3. The short gate region is of the material Silicon with a length of 0.89 micrometers and it is doped with Boron at a concentration of 922437281558470852608 cm^-3. The long gate region is of the material GaN with a length of 0.32 micrometers and it is doped with Boron at a concentration of 101317283814226903040 cm^-3. The drain region is of the material GaN with a length of 0.66 micrometers and it is doped with Boron at a concentration of 582675342167491084288 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.002)
(define Lgs 0.89)
(define Lgl 0.32)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.66)
(define Ld 0.66)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
869429929726204837888
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
922437281558470852608
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
101317283814226903040
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
582675342167491084288
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
220 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.65 micrometers and it is doped with Phosphorus at a concentration of 602283159691554324480 cm^-3. The short gate region is of the material Diamond with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 702340128276811743232 cm^-3. The long gate region is of the material Diamond with a length of 0.67 micrometers and it is doped with Boron at a concentration of 4561016040741281792 cm^-3. The drain region is of the material GaN with a length of 0.65 micrometers and it is doped with Arsenic at a concentration of 132368723671002660864 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.003)
(define Lgs 0.18)
(define Lgl 0.67)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.65)
(define Ld 0.65)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
602283159691554324480
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
702340128276811743232
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
4561016040741281792
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
132368723671002660864
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
221 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 922974676000937213952 cm^-3. The short gate region is of the material Germanium with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 491843543647953223680 cm^-3. The long gate region is of the material SiGe with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 456502866455211671552 cm^-3. The drain region is of the material GaN with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 582137893015467851776 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.005)
(define Lgs 0.79)
(define Lgl 0.8)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.21)
(define Ld 0.21)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
922974676000937213952
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
491843543647953223680
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
456502866455211671552
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
582137893015467851776
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
222 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.43 micrometers and it is doped with Boron at a concentration of 189630222447596371968 cm^-3. The short gate region is of the material SiGe with a length of 0.31 micrometers and it is doped with Boron at a concentration of 304644100710764249088 cm^-3. The long gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 208979956562974277632 cm^-3. The drain region is of the material Germanium with a length of 0.43 micrometers and it is doped with Boron at a concentration of 650622507655932280832 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.002)
(define Lgs 0.31)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.43)
(define Ld 0.43)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
189630222447596371968
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
304644100710764249088
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
208979956562974277632
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
650622507655932280832
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
223 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.91 micrometers and it is doped with Arsenic at a concentration of 73496840861753647104 cm^-3. The short gate region is of the material SiGe with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 655625816747154079744 cm^-3. The long gate region is of the material GaN with a length of 0.57 micrometers and it is doped with Boron at a concentration of 900097431414494986240 cm^-3. The drain region is of the material Diamond with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 147962968385728282624 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.007)
(define Lgs 0.51)
(define Lgl 0.57)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.91)
(define Ld 0.91)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
73496840861753647104
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
655625816747154079744
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
900097431414494986240
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
147962968385728282624
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
224 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 233831187342580613120 cm^-3. The short gate region is of the material Germanium with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 139343400947980009472 cm^-3. The long gate region is of the material Diamond with a length of 0.2 micrometers and it is doped with Arsenic at a concentration of 724708697970733613056 cm^-3. The drain region is of the material Diamond with a length of 0.57 micrometers and it is doped with Boron at a concentration of 464868314446557872128 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.005)
(define Lgs 0.63)
(define Lgl 0.2)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.57)
(define Ld 0.57)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
233831187342580613120
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
139343400947980009472
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
724708697970733613056
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
464868314446557872128
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
225 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 461402416472589074432 cm^-3. The short gate region is of the material GaN with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 976108636683935809536 cm^-3. The long gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 982637892632884805632 cm^-3. The drain region is of the material GaN with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 118988758988168183808 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.008)
(define Lgs 0.8)
(define Lgl 0.86)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.82)
(define Ld 0.82)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
461402416472589074432
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
976108636683935809536
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
982637892632884805632
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
118988758988168183808
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
226 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.32 micrometers and it is doped with Boron at a concentration of 855207891103249858560 cm^-3. The short gate region is of the material Diamond with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 614845412180690206720 cm^-3. The long gate region is of the material Diamond with a length of 0.98 micrometers and it is doped with Arsenic at a concentration of 358697697037018202112 cm^-3. The drain region is of the material SiGe with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 552873666486173827072 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.008)
(define Lgs 0.88)
(define Lgl 0.98)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.32)
(define Ld 0.32)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
855207891103249858560
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
614845412180690206720
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
358697697037018202112
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
552873666486173827072
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
227 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.9 micrometers and it is doped with Boron at a concentration of 524825951062748430336 cm^-3. The short gate region is of the material Diamond with a length of 0.56 micrometers and it is doped with Boron at a concentration of 854796826280329740288 cm^-3. The long gate region is of the material Silicon with a length of 0.07 micrometers and it is doped with Arsenic at a concentration of 725535976301416546304 cm^-3. The drain region is of the material GaN with a length of 0.9 micrometers and it is doped with Arsenic at a concentration of 204870010077054468096 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.003)
(define Lgs 0.56)
(define Lgl 0.07)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.9)
(define Ld 0.9)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
524825951062748430336
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
854796826280329740288
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
725535976301416546304
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
204870010077054468096
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
228 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.96 micrometers and it is doped with Boron at a concentration of 626823162297390727168 cm^-3. The short gate region is of the material Diamond with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 907776234844924280832 cm^-3. The long gate region is of the material Diamond with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 158591397858772746240 cm^-3. The drain region is of the material GaN with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 844857959267528998912 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.004)
(define Lgs 0.28)
(define Lgl 0.47)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.96)
(define Ld 0.96)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
626823162297390727168
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
907776234844924280832
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
158591397858772746240
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
844857959267528998912
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
229 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.06 micrometers and it is doped with Arsenic at a concentration of 595920663853208698880 cm^-3. The short gate region is of the material Germanium with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 412042951066836402176 cm^-3. The long gate region is of the material SiGe with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 797151315468379881472 cm^-3. The drain region is of the material Silicon with a length of 0.06 micrometers and it is doped with Boron at a concentration of 385322441849486966784 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.004)
(define Lgs 0.67)
(define Lgl 0.54)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.06)
(define Ld 0.06)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
595920663853208698880
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
412042951066836402176
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
797151315468379881472
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
385322441849486966784
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
230 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.35 micrometers and it is doped with Boron at a concentration of 120220194038305079296 cm^-3. The short gate region is of the material Germanium with a length of 0.66 micrometers and it is doped with Boron at a concentration of 268832494075042660352 cm^-3. The long gate region is of the material SiGe with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 265005068151127539712 cm^-3. The drain region is of the material SiGe with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 170330832882544902144 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.008)
(define Lgs 0.66)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.35)
(define Ld 0.35)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
120220194038305079296
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
268832494075042660352
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
265005068151127539712
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
170330832882544902144
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
231 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 332634625023374786560 cm^-3. The short gate region is of the material GaN with a length of 0.36 micrometers and it is doped with Boron at a concentration of 882234307259228356608 cm^-3. The long gate region is of the material Silicon with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 168756053044287832064 cm^-3. The drain region is of the material GaN with a length of 0.15 micrometers and it is doped with Boron at a concentration of 575418463306876715008 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.006)
(define Lgs 0.36)
(define Lgl 0.04)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.15)
(define Ld 0.15)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
332634625023374786560
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
882234307259228356608
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
168756053044287832064
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
575418463306876715008
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
232 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.36 micrometers and it is doped with Boron at a concentration of 292923731810634432512 cm^-3. The short gate region is of the material Germanium with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 297295772743141425152 cm^-3. The long gate region is of the material Germanium with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 447383428284236038144 cm^-3. The drain region is of the material Silicon with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 909586014354467061760 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.004)
(define Lgs 0.27)
(define Lgl 0.47)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.36)
(define Ld 0.36)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
292923731810634432512
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
297295772743141425152
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
447383428284236038144
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
909586014354467061760
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
233 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 590773917340558295040 cm^-3. The short gate region is of the material SiGe with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 652675473951660441600 cm^-3. The long gate region is of the material Diamond with a length of 0.87 micrometers and it is doped with Boron at a concentration of 93849406660134289408 cm^-3. The drain region is of the material SiGe with a length of 0.42 micrometers and it is doped with Boron at a concentration of 971034223030899048448 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.008)
(define Lgs 0.73)
(define Lgl 0.87)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.42)
(define Ld 0.42)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
590773917340558295040
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
652675473951660441600
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
93849406660134289408
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
971034223030899048448
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
234 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.99 micrometers and it is doped with Boron at a concentration of 552478589342276255744 cm^-3. The short gate region is of the material Diamond with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 904323400814134689792 cm^-3. The long gate region is of the material Silicon with a length of 0.08 micrometers and it is doped with Boron at a concentration of 927024809700964958208 cm^-3. The drain region is of the material GaN with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 307999120115039862784 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.001)
(define Lgs 0.03)
(define Lgl 0.08)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.99)
(define Ld 0.99)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
552478589342276255744
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
904323400814134689792
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
927024809700964958208
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
307999120115039862784
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
235 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 468758026198230106112 cm^-3. The short gate region is of the material Germanium with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 274085295962845675520 cm^-3. The long gate region is of the material GaN with a length of 0.21 micrometers and it is doped with Boron at a concentration of 800427411205851709440 cm^-3. The drain region is of the material SiGe with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 810587219124315881472 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.001)
(define Lgs 0.28)
(define Lgl 0.21)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.11)
(define Ld 0.11)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
468758026198230106112
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
274085295962845675520
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
800427411205851709440
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
810587219124315881472
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
236 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 37675281450090094592 cm^-3. The short gate region is of the material Germanium with a length of 0.07 micrometers and it is doped with Boron at a concentration of 583873190878110285824 cm^-3. The long gate region is of the material SiGe with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 839221289795852828672 cm^-3. The drain region is of the material Silicon with a length of 0.42 micrometers and it is doped with Arsenic at a concentration of 409386376547144695808 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.003)
(define Lgs 0.07)
(define Lgl 0.77)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.42)
(define Ld 0.42)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
37675281450090094592
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
583873190878110285824
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
839221289795852828672
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
409386376547144695808
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
237 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.08 micrometers and it is doped with Arsenic at a concentration of 261927360339864748032 cm^-3. The short gate region is of the material Diamond with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 286176172318542692352 cm^-3. The long gate region is of the material Silicon with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 408242292922008207360 cm^-3. The drain region is of the material Germanium with a length of 0.08 micrometers and it is doped with Boron at a concentration of 393496286169306628096 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.005)
(define Lgs 0.43)
(define Lgl 0.92)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.08)
(define Ld 0.08)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
261927360339864748032
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
286176172318542692352
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
408242292922008207360
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
393496286169306628096
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
238 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 940995290528814989312 cm^-3. The short gate region is of the material GaN with a length of 0.14 micrometers and it is doped with Boron at a concentration of 494541425575156252672 cm^-3. The long gate region is of the material GaN with a length of 0.27 micrometers and it is doped with Arsenic at a concentration of 824080489079435821056 cm^-3. The drain region is of the material GaN with a length of 0.88 micrometers and it is doped with Boron at a concentration of 822168468785649680384 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.007)
(define Lgs 0.14)
(define Lgl 0.27)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.88)
(define Ld 0.88)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
940995290528814989312
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
494541425575156252672
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
824080489079435821056
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
822168468785649680384
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
239 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 738993526995742883840 cm^-3. The short gate region is of the material Diamond with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 735578462260220657664 cm^-3. The long gate region is of the material GaN with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 111215196685834747904 cm^-3. The drain region is of the material Germanium with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 441745181353263497216 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.002)
(define Lgs 0.88)
(define Lgl 0.1)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.55)
(define Ld 0.55)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
738993526995742883840
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
735578462260220657664
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
111215196685834747904
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
441745181353263497216
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
240 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 498153596573723131904 cm^-3. The short gate region is of the material Germanium with a length of 0.44 micrometers and it is doped with Boron at a concentration of 2894921632552883200 cm^-3. The long gate region is of the material Germanium with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 662942689082848706560 cm^-3. The drain region is of the material Diamond with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 724260783429072060416 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.007)
(define Lgs 0.44)
(define Lgl 0.66)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.59)
(define Ld 0.59)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
498153596573723131904
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
2894921632552883200
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
662942689082848706560
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
724260783429072060416
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
241 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.05 micrometers and it is doped with Boron at a concentration of 248211395810584494080 cm^-3. The short gate region is of the material GaN with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 750168958487311810560 cm^-3. The long gate region is of the material GaN with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 220801493153292419072 cm^-3. The drain region is of the material SiGe with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 274070737628380823552 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.007)
(define Lgs 0.24)
(define Lgl 0.02)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.05)
(define Ld 0.05)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
248211395810584494080
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
750168958487311810560
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
220801493153292419072
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
274070737628380823552
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
242 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 438551339376929931264 cm^-3. The short gate region is of the material Diamond with a length of 0.01 micrometers and it is doped with Arsenic at a concentration of 237495297979210072064 cm^-3. The long gate region is of the material Diamond with a length of 0.42 micrometers and it is doped with Phosphorus at a concentration of 226294009425043357696 cm^-3. The drain region is of the material SiGe with a length of 0.16 micrometers and it is doped with Boron at a concentration of 94420689672171864064 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.007)
(define Lgs 0.01)
(define Lgl 0.42)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
438551339376929931264
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
237495297979210072064
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
226294009425043357696
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
94420689672171864064
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
243 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 750373458391226122240 cm^-3. The short gate region is of the material Diamond with a length of 1.0 micrometers and it is doped with Phosphorus at a concentration of 585214209553043423232 cm^-3. The long gate region is of the material GaN with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 803399095957738094592 cm^-3. The drain region is of the material GaN with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 383540425878132621312 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.002)
(define Lgs 1.0)
(define Lgl 0.73)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.84)
(define Ld 0.84)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
750373458391226122240
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
585214209553043423232
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
803399095957738094592
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
383540425878132621312
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
244 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 874788495754695540736 cm^-3. The short gate region is of the material Diamond with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 598900287498185867264 cm^-3. The long gate region is of the material Germanium with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 494646071564470321152 cm^-3. The drain region is of the material Silicon with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 413157180596451016704 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.009)
(define Lgs 0.71)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.97)
(define Ld 0.97)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
874788495754695540736
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
598900287498185867264
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
494646071564470321152
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
413157180596451016704
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
245 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.23 micrometers and it is doped with Boron at a concentration of 593295175019608276992 cm^-3. The short gate region is of the material Diamond with a length of 0.33 micrometers and it is doped with Phosphorus at a concentration of 271797829261582434304 cm^-3. The long gate region is of the material Diamond with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 146274460299469193216 cm^-3. The drain region is of the material Diamond with a length of 0.23 micrometers and it is doped with Phosphorus at a concentration of 611455891376224206848 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.006)
(define Lgs 0.33)
(define Lgl 0.71)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.23)
(define Ld 0.23)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
593295175019608276992
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
271797829261582434304
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
146274460299469193216
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
611455891376224206848
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
246 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 585666769320873295872 cm^-3. The short gate region is of the material GaN with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 921046028954663780352 cm^-3. The long gate region is of the material SiGe with a length of 0.19 micrometers and it is doped with Arsenic at a concentration of 958321492524877873152 cm^-3. The drain region is of the material SiGe with a length of 0.54 micrometers and it is doped with Boron at a concentration of 979755728501784444928 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.008)
(define Lgs 0.89)
(define Lgl 0.19)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.54)
(define Ld 0.54)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
585666769320873295872
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
921046028954663780352
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
958321492524877873152
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
979755728501784444928
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
247 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.35 micrometers and it is doped with Boron at a concentration of 971472579853045465088 cm^-3. The short gate region is of the material Germanium with a length of 0.49 micrometers and it is doped with Phosphorus at a concentration of 595239519766696951808 cm^-3. The long gate region is of the material GaN with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 805916835667106201600 cm^-3. The drain region is of the material Germanium with a length of 0.35 micrometers and it is doped with Boron at a concentration of 863907951198457167872 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.009)
(define Lgs 0.49)
(define Lgl 0.48)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.35)
(define Ld 0.35)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
971472579853045465088
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
595239519766696951808
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
805916835667106201600
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
863907951198457167872
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
248 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 464071135095187832832 cm^-3. The short gate region is of the material Germanium with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 532084044901908742144 cm^-3. The long gate region is of the material Germanium with a length of 0.18 micrometers and it is doped with Boron at a concentration of 326252825650052595712 cm^-3. The drain region is of the material GaN with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 737044353593393545216 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.008)
(define Lgs 0.08)
(define Lgl 0.18)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.3)
(define Ld 0.3)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
464071135095187832832
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
532084044901908742144
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
326252825650052595712
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
737044353593393545216
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
249 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 968968429682845286400 cm^-3. The short gate region is of the material SiGe with a length of 0.64 micrometers and it is doped with Boron at a concentration of 111293540612659888128 cm^-3. The long gate region is of the material Diamond with a length of 0.72 micrometers and it is doped with Boron at a concentration of 819192350330203144192 cm^-3. The drain region is of the material Silicon with a length of 0.63 micrometers and it is doped with Boron at a concentration of 543198172570957643776 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.004)
(define Lgs 0.64)
(define Lgl 0.72)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.63)
(define Ld 0.63)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
968968429682845286400
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
111293540612659888128
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
819192350330203144192
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
543198172570957643776
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
250 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.41 micrometers and it is doped with Boron at a concentration of 510312052316589129728 cm^-3. The short gate region is of the material SiGe with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 905663094440495939584 cm^-3. The long gate region is of the material Diamond with a length of 0.65 micrometers and it is doped with Phosphorus at a concentration of 334418884378763722752 cm^-3. The drain region is of the material GaN with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 204523559969336229888 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.003)
(define Lgs 0.44)
(define Lgl 0.65)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.41)
(define Ld 0.41)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
510312052316589129728
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
905663094440495939584
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
334418884378763722752
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
204523559969336229888
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
251 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 467356823861900869632 cm^-3. The short gate region is of the material Silicon with a length of 0.36 micrometers and it is doped with Boron at a concentration of 535258272336883351552 cm^-3. The long gate region is of the material Diamond with a length of 0.99 micrometers and it is doped with Arsenic at a concentration of 366405124259740254208 cm^-3. The drain region is of the material SiGe with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 154503265850241679360 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.008)
(define Lgs 0.36)
(define Lgl 0.99)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.45)
(define Ld 0.45)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
467356823861900869632
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
535258272336883351552
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
366405124259740254208
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
154503265850241679360
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
252 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 505473337925149655040 cm^-3. The short gate region is of the material SiGe with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 450859043563226005504 cm^-3. The long gate region is of the material Silicon with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 385764591196768829440 cm^-3. The drain region is of the material GaN with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 603685757739570036736 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.006)
(define Lgs 0.44)
(define Lgl 0.63)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.28)
(define Ld 0.28)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
505473337925149655040
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
450859043563226005504
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
385764591196768829440
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
603685757739570036736
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
253 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 913857870046198104064 cm^-3. The short gate region is of the material Silicon with a length of 0.21 micrometers and it is doped with Boron at a concentration of 132357854524332032000 cm^-3. The long gate region is of the material SiGe with a length of 0.39 micrometers and it is doped with Boron at a concentration of 720706414544130277376 cm^-3. The drain region is of the material SiGe with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 414461336722687000576 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.006)
(define Lgs 0.21)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.57)
(define Ld 0.57)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
913857870046198104064
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
132357854524332032000
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
720706414544130277376
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
414461336722687000576
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
254 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.6 micrometers and it is doped with Boron at a concentration of 854123861950656413696 cm^-3. The short gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 601421352369329799168 cm^-3. The long gate region is of the material SiGe with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 281508394225885675520 cm^-3. The drain region is of the material Silicon with a length of 0.6 micrometers and it is doped with Arsenic at a concentration of 668857668626155700224 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.007)
(define Lgs 0.86)
(define Lgl 0.52)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.6)
(define Ld 0.6)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
854123861950656413696
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
601421352369329799168
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
281508394225885675520
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
668857668626155700224
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
255 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 274614105017193693184 cm^-3. The short gate region is of the material SiGe with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 768668277321662464000 cm^-3. The long gate region is of the material Germanium with a length of 0.84 micrometers and it is doped with Boron at a concentration of 749502557001239625728 cm^-3. The drain region is of the material Germanium with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 563635519519589007360 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.003)
(define Lgs 0.76)
(define Lgl 0.84)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.37)
(define Ld 0.37)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
274614105017193693184
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
768668277321662464000
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
749502557001239625728
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
563635519519589007360
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
256 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.98 micrometers and it is doped with Arsenic at a concentration of 433674202737619501056 cm^-3. The short gate region is of the material SiGe with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 56700379861420957696 cm^-3. The long gate region is of the material Silicon with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 301638012054272081920 cm^-3. The drain region is of the material Silicon with a length of 0.98 micrometers and it is doped with Boron at a concentration of 56210458735108956160 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.01)
(define Lgs 0.52)
(define Lgl 0.3)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.98)
(define Ld 0.98)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
433674202737619501056
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
56700379861420957696
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
301638012054272081920
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
56210458735108956160
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
257 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.48 micrometers and it is doped with Boron at a concentration of 805661588012031279104 cm^-3. The short gate region is of the material GaN with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 428075321862205997056 cm^-3. The long gate region is of the material SiGe with a length of 0.38 micrometers and it is doped with Boron at a concentration of 770425075777865515008 cm^-3. The drain region is of the material Diamond with a length of 0.48 micrometers and it is doped with Boron at a concentration of 540499045769014804480 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.24)
(define Lgl 0.38)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.48)
(define Ld 0.48)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
805661588012031279104
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
428075321862205997056
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
770425075777865515008
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
540499045769014804480
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
258 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.24 micrometers and it is doped with Boron at a concentration of 9742910504745623552 cm^-3. The short gate region is of the material SiGe with a length of 0.8 micrometers and it is doped with Arsenic at a concentration of 562186218251466702848 cm^-3. The long gate region is of the material SiGe with a length of 0.91 micrometers and it is doped with Phosphorus at a concentration of 148255658625161953280 cm^-3. The drain region is of the material GaN with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 297624076588856639488 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.8)
(define Lgl 0.91)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.24)
(define Ld 0.24)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
9742910504745623552
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
562186218251466702848
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
148255658625161953280
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
297624076588856639488
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
259 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 855490251736194613248 cm^-3. The short gate region is of the material GaN with a length of 0.94 micrometers and it is doped with Arsenic at a concentration of 286381211426299281408 cm^-3. The long gate region is of the material Diamond with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 703456724892804448256 cm^-3. The drain region is of the material Silicon with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 548453639855250735104 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.002)
(define Lgs 0.94)
(define Lgl 0.1)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.82)
(define Ld 0.82)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
855490251736194613248
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
286381211426299281408
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
703456724892804448256
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
548453639855250735104
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
260 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 607495993525910765568 cm^-3. The short gate region is of the material Diamond with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 76888639961677594624 cm^-3. The long gate region is of the material GaN with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 750441374950480281600 cm^-3. The drain region is of the material Diamond with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 133397589625160531968 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.004)
(define Lgs 0.56)
(define Lgl 0.4)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.48)
(define Ld 0.48)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
607495993525910765568
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
76888639961677594624
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
750441374950480281600
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
133397589625160531968
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
261 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 904900188298159194112 cm^-3. The short gate region is of the material Diamond with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 26205326771662888960 cm^-3. The long gate region is of the material GaN with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 978345908048433774592 cm^-3. The drain region is of the material Diamond with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 649155235612414181376 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.009)
(define Lgs 0.96)
(define Lgl 0.24)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.51)
(define Ld 0.51)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
904900188298159194112
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
26205326771662888960
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
978345908048433774592
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
649155235612414181376
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
262 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 716240763088768729088 cm^-3. The short gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 509819304373512830976 cm^-3. The long gate region is of the material GaN with a length of 0.02 micrometers and it is doped with Boron at a concentration of 934525767024347709440 cm^-3. The drain region is of the material GaN with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 913470592032792248320 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.001)
(define Lgs 0.55)
(define Lgl 0.02)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.93)
(define Ld 0.93)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
716240763088768729088
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
509819304373512830976
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
934525767024347709440
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
913470592032792248320
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
263 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.26 micrometers and it is doped with Boron at a concentration of 941941874953765126144 cm^-3. The short gate region is of the material GaN with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 585217268494063501312 cm^-3. The long gate region is of the material Silicon with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 60836080484824498176 cm^-3. The drain region is of the material SiGe with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 441675102864088498176 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.005)
(define Lgs 0.93)
(define Lgl 0.04)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.26)
(define Ld 0.26)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
941941874953765126144
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
585217268494063501312
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
60836080484824498176
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
441675102864088498176
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
264 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 141512753832467251200 cm^-3. The short gate region is of the material Silicon with a length of 0.74 micrometers and it is doped with Boron at a concentration of 347600700735224020992 cm^-3. The long gate region is of the material Silicon with a length of 0.91 micrometers and it is doped with Boron at a concentration of 84916392495244181504 cm^-3. The drain region is of the material SiGe with a length of 0.7 micrometers and it is doped with Phosphorus at a concentration of 399662908483230367744 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.007)
(define Lgs 0.74)
(define Lgl 0.91)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.7)
(define Ld 0.7)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
141512753832467251200
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
347600700735224020992
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
84916392495244181504
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
399662908483230367744
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
265 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.36 micrometers and it is doped with Boron at a concentration of 602922757152573358080 cm^-3. The short gate region is of the material Diamond with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 663062351674405158912 cm^-3. The long gate region is of the material Germanium with a length of 0.65 micrometers and it is doped with Boron at a concentration of 780930849593681772544 cm^-3. The drain region is of the material Diamond with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 838816998587532574720 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.006)
(define Lgs 0.51)
(define Lgl 0.65)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.36)
(define Ld 0.36)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
602922757152573358080
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
663062351674405158912
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
780930849593681772544
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
838816998587532574720
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
266 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 736732543620837933056 cm^-3. The short gate region is of the material Germanium with a length of 0.21 micrometers and it is doped with Arsenic at a concentration of 676126673082717044736 cm^-3. The long gate region is of the material Diamond with a length of 0.03 micrometers and it is doped with Boron at a concentration of 961649791486086086656 cm^-3. The drain region is of the material Silicon with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 554839377215039733760 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.009)
(define Lgs 0.21)
(define Lgl 0.03)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
736732543620837933056
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
676126673082717044736
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
961649791486086086656
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
554839377215039733760
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
267 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.16 micrometers and it is doped with Boron at a concentration of 496951640643340992512 cm^-3. The short gate region is of the material Germanium with a length of 0.97 micrometers and it is doped with Arsenic at a concentration of 157490663660569985024 cm^-3. The long gate region is of the material GaN with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 725538780558924709888 cm^-3. The drain region is of the material SiGe with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 407713605075291471872 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.005)
(define Lgs 0.97)
(define Lgl 0.15)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
496951640643340992512
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
157490663660569985024
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
725538780558924709888
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
407713605075291471872
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
268 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.25 micrometers and it is doped with Boron at a concentration of 80754273049729662976 cm^-3. The short gate region is of the material SiGe with a length of 0.12 micrometers and it is doped with Arsenic at a concentration of 67523826643057090560 cm^-3. The long gate region is of the material Germanium with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 566714651717185699840 cm^-3. The drain region is of the material GaN with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 802544952809939927040 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.006)
(define Lgs 0.12)
(define Lgl 0.34)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.25)
(define Ld 0.25)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
80754273049729662976
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
67523826643057090560
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
566714651717185699840
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
802544952809939927040
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
269 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.8 micrometers and it is doped with Boron at a concentration of 853449625294598701056 cm^-3. The short gate region is of the material Silicon with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 447006408311949230080 cm^-3. The long gate region is of the material Diamond with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 619904928449134723072 cm^-3. The drain region is of the material Germanium with a length of 0.8 micrometers and it is doped with Boron at a concentration of 34107912801591197696 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.009)
(define Lgs 0.78)
(define Lgl 0.93)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.8)
(define Ld 0.8)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
853449625294598701056
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
447006408311949230080
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
619904928449134723072
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
34107912801591197696
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
270 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 870721971394213576704 cm^-3. The short gate region is of the material Silicon with a length of 0.75 micrometers and it is doped with Boron at a concentration of 23987168072407474176 cm^-3. The long gate region is of the material GaN with a length of 0.53 micrometers and it is doped with Boron at a concentration of 393377053411183296512 cm^-3. The drain region is of the material Diamond with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 319831037345648607232 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.004)
(define Lgs 0.75)
(define Lgl 0.53)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.27)
(define Ld 0.27)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
870721971394213576704
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
23987168072407474176
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
393377053411183296512
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
319831037345648607232
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
271 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 75870821667215622144 cm^-3. The short gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 541214879936505839616 cm^-3. The long gate region is of the material Diamond with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 558882619664848388096 cm^-3. The drain region is of the material Silicon with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 595393913672548220928 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.008)
(define Lgs 0.55)
(define Lgl 0.51)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.58)
(define Ld 0.58)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
75870821667215622144
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
541214879936505839616
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
558882619664848388096
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
595393913672548220928
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
272 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 672908055893802745856 cm^-3. The short gate region is of the material Silicon with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 267085156037366579200 cm^-3. The long gate region is of the material Diamond with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 398243809592528863232 cm^-3. The drain region is of the material Germanium with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 520366991894215393280 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.009)
(define Lgs 0.13)
(define Lgl 0.83)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.73)
(define Ld 0.73)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
672908055893802745856
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
267085156037366579200
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
398243809592528863232
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
520366991894215393280
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
273 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.84 micrometers and it is doped with Boron at a concentration of 842940256886697754624 cm^-3. The short gate region is of the material Silicon with a length of 0.52 micrometers and it is doped with Boron at a concentration of 487768985647592505344 cm^-3. The long gate region is of the material Germanium with a length of 0.67 micrometers and it is doped with Boron at a concentration of 914079376564014809088 cm^-3. The drain region is of the material Germanium with a length of 0.84 micrometers and it is doped with Boron at a concentration of 710733833406908858368 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.002)
(define Lgs 0.52)
(define Lgl 0.67)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.84)
(define Ld 0.84)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
842940256886697754624
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
487768985647592505344
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
914079376564014809088
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
710733833406908858368
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
274 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.47 micrometers and it is doped with Phosphorus at a concentration of 820330203969246593024 cm^-3. The short gate region is of the material GaN with a length of 0.83 micrometers and it is doped with Arsenic at a concentration of 866330234787940139008 cm^-3. The long gate region is of the material Diamond with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 260596457095475593216 cm^-3. The drain region is of the material Silicon with a length of 0.47 micrometers and it is doped with Boron at a concentration of 500566791011978051584 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.007)
(define Lgs 0.83)
(define Lgl 0.36)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.47)
(define Ld 0.47)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
820330203969246593024
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
866330234787940139008
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
260596457095475593216
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
500566791011978051584
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
275 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 138924293910120628224 cm^-3. The short gate region is of the material Diamond with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 90823855134591418368 cm^-3. The long gate region is of the material Silicon with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 63179780871584456704 cm^-3. The drain region is of the material SiGe with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 430475729771639996416 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.004)
(define Lgs 0.96)
(define Lgl 0.95)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
138924293910120628224
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
90823855134591418368
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
63179780871584456704
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
430475729771639996416
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
276 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 847742455966790713344 cm^-3. The short gate region is of the material GaN with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 440375038090579935232 cm^-3. The long gate region is of the material Diamond with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 727124505904308027392 cm^-3. The drain region is of the material GaN with a length of 0.4 micrometers and it is doped with Boron at a concentration of 929378947980140347392 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.002)
(define Lgs 0.32)
(define Lgl 0.47)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.4)
(define Ld 0.4)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
847742455966790713344
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
440375038090579935232
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
727124505904308027392
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
929378947980140347392
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
277 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 303279942353394860032 cm^-3. The short gate region is of the material SiGe with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 208249725412885626880 cm^-3. The long gate region is of the material Silicon with a length of 0.15 micrometers and it is doped with Boron at a concentration of 678238842914826616832 cm^-3. The drain region is of the material Silicon with a length of 0.48 micrometers and it is doped with Boron at a concentration of 805477839904968015872 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.007)
(define Lgs 0.76)
(define Lgl 0.15)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.48)
(define Ld 0.48)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
303279942353394860032
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
208249725412885626880
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
678238842914826616832
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
805477839904968015872
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
278 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 704391747023744139264 cm^-3. The short gate region is of the material Silicon with a length of 0.68 micrometers and it is doped with Boron at a concentration of 862019326463705612288 cm^-3. The long gate region is of the material Silicon with a length of 0.73 micrometers and it is doped with Boron at a concentration of 520288893791185010688 cm^-3. The drain region is of the material Germanium with a length of 0.59 micrometers and it is doped with Arsenic at a concentration of 474524479676965060608 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.007)
(define Lgs 0.68)
(define Lgl 0.73)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.59)
(define Ld 0.59)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
704391747023744139264
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
862019326463705612288
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
520288893791185010688
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
474524479676965060608
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
279 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.97 micrometers and it is doped with Arsenic at a concentration of 222453518655562481664 cm^-3. The short gate region is of the material SiGe with a length of 0.24 micrometers and it is doped with Arsenic at a concentration of 672156739605494497280 cm^-3. The long gate region is of the material Diamond with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 142807553179643789312 cm^-3. The drain region is of the material Germanium with a length of 0.97 micrometers and it is doped with Boron at a concentration of 983376584463361507328 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.009)
(define Lgs 0.24)
(define Lgl 0.33)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.97)
(define Ld 0.97)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
222453518655562481664
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
672156739605494497280
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
142807553179643789312
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
983376584463361507328
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
280 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.51 micrometers and it is doped with Boron at a concentration of 826192959746339110912 cm^-3. The short gate region is of the material Silicon with a length of 0.9 micrometers and it is doped with Boron at a concentration of 339960099276396036096 cm^-3. The long gate region is of the material GaN with a length of 0.15 micrometers and it is doped with Boron at a concentration of 244151896014091255808 cm^-3. The drain region is of the material Silicon with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 932974129414848774144 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.004)
(define Lgs 0.9)
(define Lgl 0.15)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.51)
(define Ld 0.51)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
826192959746339110912
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
339960099276396036096
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
244151896014091255808
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
932974129414848774144
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
281 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.04 micrometers and it is doped with Boron at a concentration of 169548491642142162944 cm^-3. The short gate region is of the material GaN with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 221726443981920403456 cm^-3. The long gate region is of the material Germanium with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 936695747561562832896 cm^-3. The drain region is of the material GaN with a length of 0.04 micrometers and it is doped with Boron at a concentration of 188841378850080686080 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.005)
(define Lgs 0.71)
(define Lgl 0.51)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.04)
(define Ld 0.04)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
169548491642142162944
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
221726443981920403456
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
936695747561562832896
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
188841378850080686080
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
282 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.05 micrometers and it is doped with Boron at a concentration of 66951040535570825216 cm^-3. The short gate region is of the material GaN with a length of 0.36 micrometers and it is doped with Phosphorus at a concentration of 679014773745177591808 cm^-3. The long gate region is of the material SiGe with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 450307131194713440256 cm^-3. The drain region is of the material Silicon with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 831590370073309872128 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.005)
(define Lgs 0.36)
(define Lgl 0.5)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.05)
(define Ld 0.05)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
66951040535570825216
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
679014773745177591808
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
450307131194713440256
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
831590370073309872128
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
283 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.64 micrometers and it is doped with Arsenic at a concentration of 565418885330209079296 cm^-3. The short gate region is of the material Germanium with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 718716087898407829504 cm^-3. The long gate region is of the material GaN with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 535369509410554511360 cm^-3. The drain region is of the material SiGe with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 536579118515238600704 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.007)
(define Lgs 0.11)
(define Lgl 0.22)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.64)
(define Ld 0.64)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
565418885330209079296
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
718716087898407829504
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
535369509410554511360
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
536579118515238600704
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
284 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.14 micrometers and it is doped with Arsenic at a concentration of 286802266882993618944 cm^-3. The short gate region is of the material Diamond with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 139327731024295526400 cm^-3. The long gate region is of the material Germanium with a length of 0.08 micrometers and it is doped with Boron at a concentration of 354058230436442800128 cm^-3. The drain region is of the material Silicon with a length of 0.14 micrometers and it is doped with Boron at a concentration of 171318974130953289728 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.003)
(define Lgs 0.59)
(define Lgl 0.08)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.14)
(define Ld 0.14)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
286802266882993618944
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
139327731024295526400
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
354058230436442800128
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
171318974130953289728
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
285 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 500009420438714712064 cm^-3. The short gate region is of the material Diamond with a length of 0.21 micrometers and it is doped with Boron at a concentration of 650293325200533225472 cm^-3. The long gate region is of the material Diamond with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 740088152382327881728 cm^-3. The drain region is of the material GaN with a length of 0.93 micrometers and it is doped with Boron at a concentration of 784837039312716038144 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.003)
(define Lgs 0.21)
(define Lgl 0.16)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.93)
(define Ld 0.93)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
500009420438714712064
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
650293325200533225472
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
740088152382327881728
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
784837039312716038144
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
286 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 44609420198728572928 cm^-3. The short gate region is of the material Germanium with a length of 0.53 micrometers and it is doped with Boron at a concentration of 62884774483846070272 cm^-3. The long gate region is of the material GaN with a length of 0.06 micrometers and it is doped with Boron at a concentration of 909835103155361677312 cm^-3. The drain region is of the material Silicon with a length of 0.4 micrometers and it is doped with Phosphorus at a concentration of 153764302792587083776 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.005)
(define Lgs 0.53)
(define Lgl 0.06)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.4)
(define Ld 0.4)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
44609420198728572928
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
62884774483846070272
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
909835103155361677312
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
153764302792587083776
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
287 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 49279572953293365248 cm^-3. The short gate region is of the material Silicon with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 835932459562581360640 cm^-3. The long gate region is of the material SiGe with a length of 0.98 micrometers and it is doped with Boron at a concentration of 708444896166778109952 cm^-3. The drain region is of the material Silicon with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 385264952978102681600 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.004)
(define Lgs 0.57)
(define Lgl 0.98)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
49279572953293365248
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
835932459562581360640
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
708444896166778109952
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
385264952978102681600
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
288 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.84 micrometers and it is doped with Boron at a concentration of 622177922406602768384 cm^-3. The short gate region is of the material Diamond with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 239059840495928049664 cm^-3. The long gate region is of the material Germanium with a length of 0.1 micrometers and it is doped with Boron at a concentration of 293421380914204278784 cm^-3. The drain region is of the material GaN with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 557521343791178973184 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.003)
(define Lgs 0.85)
(define Lgl 0.1)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.84)
(define Ld 0.84)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
622177922406602768384
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
239059840495928049664
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
293421380914204278784
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
557521343791178973184
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
289 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.1 micrometers and it is doped with Boron at a concentration of 518583401274965491712 cm^-3. The short gate region is of the material Diamond with a length of 0.99 micrometers and it is doped with Boron at a concentration of 148291220657212784640 cm^-3. The long gate region is of the material GaN with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 963206721169591238656 cm^-3. The drain region is of the material GaN with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 173083839122388713472 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.009)
(define Lgs 0.99)
(define Lgl 0.75)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.1)
(define Ld 0.1)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
518583401274965491712
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
148291220657212784640
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
963206721169591238656
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
173083839122388713472
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
290 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.88 micrometers and it is doped with Boron at a concentration of 655073720385845985280 cm^-3. The short gate region is of the material GaN with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 500678571483927412736 cm^-3. The long gate region is of the material SiGe with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 153697077333201518592 cm^-3. The drain region is of the material Diamond with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 984923656742987104256 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.004)
(define Lgs 0.43)
(define Lgl 0.26)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.88)
(define Ld 0.88)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
655073720385845985280
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
500678571483927412736
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
153697077333201518592
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
984923656742987104256
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
291 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 626821993534925570048 cm^-3. The short gate region is of the material Silicon with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 354898469562407845888 cm^-3. The long gate region is of the material Germanium with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 736207110293737832448 cm^-3. The drain region is of the material Germanium with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 459972521738795614208 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.007)
(define Lgs 0.94)
(define Lgl 0.89)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.28)
(define Ld 0.28)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
626821993534925570048
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
354898469562407845888
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
736207110293737832448
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
459972521738795614208
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
292 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 628952275053151518720 cm^-3. The short gate region is of the material Silicon with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 7571652420392561664 cm^-3. The long gate region is of the material SiGe with a length of 0.74 micrometers and it is doped with Boron at a concentration of 823066320414266097664 cm^-3. The drain region is of the material SiGe with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 570042365331707002880 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.008)
(define Lgs 0.57)
(define Lgl 0.74)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.96)
(define Ld 0.96)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
628952275053151518720
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
7571652420392561664
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
823066320414266097664
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
570042365331707002880
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
293 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 204519721008639934464 cm^-3. The short gate region is of the material GaN with a length of 0.92 micrometers and it is doped with Boron at a concentration of 130522783546100318208 cm^-3. The long gate region is of the material Diamond with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 637968379027920257024 cm^-3. The drain region is of the material Diamond with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 343380900240224681984 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.001)
(define Lgs 0.92)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.34)
(define Ld 0.34)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
204519721008639934464
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
130522783546100318208
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
637968379027920257024
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
343380900240224681984
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
294 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 324831958089910452224 cm^-3. The short gate region is of the material Silicon with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 900908044645489311744 cm^-3. The long gate region is of the material Germanium with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 37831154730559258624 cm^-3. The drain region is of the material Diamond with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 349288154218802446336 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.005)
(define Lgs 0.59)
(define Lgl 0.82)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.7)
(define Ld 0.7)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
324831958089910452224
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
900908044645489311744
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
37831154730559258624
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
349288154218802446336
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
295 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 204792299107041280000 cm^-3. The short gate region is of the material Diamond with a length of 0.75 micrometers and it is doped with Arsenic at a concentration of 572936863284537982976 cm^-3. The long gate region is of the material SiGe with a length of 0.73 micrometers and it is doped with Boron at a concentration of 514576335535430303744 cm^-3. The drain region is of the material SiGe with a length of 0.85 micrometers and it is doped with Phosphorus at a concentration of 295996382982368133120 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.005)
(define Lgs 0.75)
(define Lgl 0.73)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.85)
(define Ld 0.85)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
204792299107041280000
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
572936863284537982976
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
514576335535430303744
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
295996382982368133120
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
296 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 750854364374964633600 cm^-3. The short gate region is of the material Diamond with a length of 0.1 micrometers and it is doped with Arsenic at a concentration of 73367194273340325888 cm^-3. The long gate region is of the material Diamond with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 412897588994999844864 cm^-3. The drain region is of the material Diamond with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 539292396383651495936 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.01)
(define Lgs 0.1)
(define Lgl 0.34)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.79)
(define Ld 0.79)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
750854364374964633600
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
73367194273340325888
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
412897588994999844864
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
539292396383651495936
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
297 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 103334106363685601280 cm^-3. The short gate region is of the material Silicon with a length of 0.33 micrometers and it is doped with Boron at a concentration of 800292187423421497344 cm^-3. The long gate region is of the material Diamond with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 336440489529647300608 cm^-3. The drain region is of the material Diamond with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 413874594768309583872 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.008)
(define Lgs 0.33)
(define Lgl 0.59)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.32)
(define Ld 0.32)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
103334106363685601280
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
800292187423421497344
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
336440489529647300608
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
413874594768309583872
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
298 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.46 micrometers and it is doped with Boron at a concentration of 862166768040360673280 cm^-3. The short gate region is of the material SiGe with a length of 0.65 micrometers and it is doped with Boron at a concentration of 510328080746207379456 cm^-3. The long gate region is of the material Silicon with a length of 0.81 micrometers and it is doped with Boron at a concentration of 862672733210217414656 cm^-3. The drain region is of the material Germanium with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 734028167071817400320 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.007)
(define Lgs 0.65)
(define Lgl 0.81)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.46)
(define Ld 0.46)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
862166768040360673280
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
510328080746207379456
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
862672733210217414656
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
734028167071817400320
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
299 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.77 micrometers and it is doped with Arsenic at a concentration of 33577393082380787712 cm^-3. The short gate region is of the material Germanium with a length of 0.6 micrometers and it is doped with Boron at a concentration of 382279114960820109312 cm^-3. The long gate region is of the material Germanium with a length of 0.16 micrometers and it is doped with Phosphorus at a concentration of 560336354541305200640 cm^-3. The drain region is of the material SiGe with a length of 0.77 micrometers and it is doped with Boron at a concentration of 151609190150161498112 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.003)
(define Lgs 0.6)
(define Lgl 0.16)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.77)
(define Ld 0.77)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
33577393082380787712
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
382279114960820109312
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
560336354541305200640
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
151609190150161498112
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
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