id stringlengths 24 24 | title stringlengths 3 59 | context stringlengths 151 3.71k | question stringlengths 12 217 | answers dict |
|---|---|---|---|---|
572f73b704bcaa1900d76970 | Compact_disc | SVCD has two-thirds the resolution of DVD, and over 2.7 times the resolution of VCD. One CD-R disc can hold up to 60 minutes of standard quality SVCD-format video. While no specific limit on SVCD video length is mandated by the specification, one must lower the video bit rate, and therefore quality, to accommodate very long videos. It is usually difficult to fit much more than 100 minutes of video onto one SVCD without incurring significant quality loss, and many hardware players are unable to play video with an instantaneous bit rate lower than 300 to 600 kilobits per second. | What is the maximum amount of video a SVCD can properly hold? | {
"text": [
"100 minutes"
],
"answer_start": [
380
]
} |
572f748904bcaa1900d7697f | Compact_disc | Photo CD is a system designed by Kodak for digitizing and storing photos on a CD. Launched in 1992, the discs were designed to hold nearly 100 high-quality images, scanned prints and slides using special proprietary encoding. Photo CDs are defined in the Beige Book and conform to the CD-ROM XA and CD-i Bridge specifications as well. They are intended to play on CD-i players, Photo CD players and any computer with the suitable software irrespective of the operating system. The images can also be printed out on photographic paper with a special Kodak machine. This format is not to be confused with Kodak Picture CD, which is a consumer product in CD-ROM format. | Who created Photo CDs? | {
"text": [
"Kodak"
],
"answer_start": [
33
]
} |
572f748904bcaa1900d76980 | Compact_disc | Photo CD is a system designed by Kodak for digitizing and storing photos on a CD. Launched in 1992, the discs were designed to hold nearly 100 high-quality images, scanned prints and slides using special proprietary encoding. Photo CDs are defined in the Beige Book and conform to the CD-ROM XA and CD-i Bridge specifications as well. They are intended to play on CD-i players, Photo CD players and any computer with the suitable software irrespective of the operating system. The images can also be printed out on photographic paper with a special Kodak machine. This format is not to be confused with Kodak Picture CD, which is a consumer product in CD-ROM format. | When were Photo CDs initially released? | {
"text": [
"1992"
],
"answer_start": [
94
]
} |
572f748904bcaa1900d76981 | Compact_disc | Photo CD is a system designed by Kodak for digitizing and storing photos on a CD. Launched in 1992, the discs were designed to hold nearly 100 high-quality images, scanned prints and slides using special proprietary encoding. Photo CDs are defined in the Beige Book and conform to the CD-ROM XA and CD-i Bridge specifications as well. They are intended to play on CD-i players, Photo CD players and any computer with the suitable software irrespective of the operating system. The images can also be printed out on photographic paper with a special Kodak machine. This format is not to be confused with Kodak Picture CD, which is a consumer product in CD-ROM format. | How many images could Photo CDs initially contain? | {
"text": [
"100"
],
"answer_start": [
139
]
} |
572f748904bcaa1900d76982 | Compact_disc | Photo CD is a system designed by Kodak for digitizing and storing photos on a CD. Launched in 1992, the discs were designed to hold nearly 100 high-quality images, scanned prints and slides using special proprietary encoding. Photo CDs are defined in the Beige Book and conform to the CD-ROM XA and CD-i Bridge specifications as well. They are intended to play on CD-i players, Photo CD players and any computer with the suitable software irrespective of the operating system. The images can also be printed out on photographic paper with a special Kodak machine. This format is not to be confused with Kodak Picture CD, which is a consumer product in CD-ROM format. | What type of paper can Photo CD images be produced on? | {
"text": [
"photographic paper"
],
"answer_start": [
515
]
} |
572f748904bcaa1900d76983 | Compact_disc | Photo CD is a system designed by Kodak for digitizing and storing photos on a CD. Launched in 1992, the discs were designed to hold nearly 100 high-quality images, scanned prints and slides using special proprietary encoding. Photo CDs are defined in the Beige Book and conform to the CD-ROM XA and CD-i Bridge specifications as well. They are intended to play on CD-i players, Photo CD players and any computer with the suitable software irrespective of the operating system. The images can also be printed out on photographic paper with a special Kodak machine. This format is not to be confused with Kodak Picture CD, which is a consumer product in CD-ROM format. | In what book are Photo CD standards defined? | {
"text": [
"Beige Book"
],
"answer_start": [
255
]
} |
572f757a04bcaa1900d76993 | Compact_disc | The Red Book audio specification, except for a simple "anti-copy" statement in the subcode, does not include any copy protection mechanism. Known at least as early as 2001, attempts were made by record companies to market "copy-protected" non-standard compact discs, which cannot be ripped, or copied, to hard drives or easily converted to MP3s. One major drawback to these copy-protected discs is that most will not play on either computer CD-ROM drives or some standalone CD players that use CD-ROM mechanisms. Philips has stated that such discs are not permitted to bear the trademarked Compact Disc Digital Audio logo because they violate the Red Book specifications. Numerous copy-protection systems have been countered by readily available, often free, software. | When did record companies first attempt to protect their CDs from copying? | {
"text": [
"2001"
],
"answer_start": [
167
]
} |
572f757a04bcaa1900d76994 | Compact_disc | The Red Book audio specification, except for a simple "anti-copy" statement in the subcode, does not include any copy protection mechanism. Known at least as early as 2001, attempts were made by record companies to market "copy-protected" non-standard compact discs, which cannot be ripped, or copied, to hard drives or easily converted to MP3s. One major drawback to these copy-protected discs is that most will not play on either computer CD-ROM drives or some standalone CD players that use CD-ROM mechanisms. Philips has stated that such discs are not permitted to bear the trademarked Compact Disc Digital Audio logo because they violate the Red Book specifications. Numerous copy-protection systems have been countered by readily available, often free, software. | Who said that protected CDs are not allowed to carry the CDDA logo? | {
"text": [
"Philips"
],
"answer_start": [
513
]
} |
572f757a04bcaa1900d76995 | Compact_disc | The Red Book audio specification, except for a simple "anti-copy" statement in the subcode, does not include any copy protection mechanism. Known at least as early as 2001, attempts were made by record companies to market "copy-protected" non-standard compact discs, which cannot be ripped, or copied, to hard drives or easily converted to MP3s. One major drawback to these copy-protected discs is that most will not play on either computer CD-ROM drives or some standalone CD players that use CD-ROM mechanisms. Philips has stated that such discs are not permitted to bear the trademarked Compact Disc Digital Audio logo because they violate the Red Book specifications. Numerous copy-protection systems have been countered by readily available, often free, software. | Where does the Red Book mention copy protection? | {
"text": [
"in the subcode"
],
"answer_start": [
76
]
} |
572ed956c246551400ce471c | Transistor | A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits. | What is the use of a transistor? | {
"text": [
"to amplify or switch electronic signals and electrical power"
],
"answer_start": [
44
]
} |
572ed956c246551400ce471d | Transistor | A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits. | What is a transistor made of? | {
"text": [
"semiconductor material"
],
"answer_start": [
124
]
} |
572ed956c246551400ce471e | Transistor | A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits. | What is the minimum amount of external connection terminals to call an item a transistor? | {
"text": [
"three"
],
"answer_start": [
161
]
} |
572ed956c246551400ce4720 | Transistor | A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits. | Where are most transistors found? | {
"text": [
"embedded in integrated circuits"
],
"answer_start": [
540
]
} |
572edac4dfa6aa1500f8d46b | Transistor | The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. First conceived by Julius Lilienfeld in 1926 and practically implemented in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and Bardeen, Brattain, and Shockley shared the 1956 Nobel Prize in Physics for their achievement. | When was the first transistor created? | {
"text": [
"1926"
],
"answer_start": [
167
]
} |
572edac4dfa6aa1500f8d46c | Transistor | The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. First conceived by Julius Lilienfeld in 1926 and practically implemented in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and Bardeen, Brattain, and Shockley shared the 1956 Nobel Prize in Physics for their achievement. | Who invented the first transistor? | {
"text": [
"Julius Lilienfeld"
],
"answer_start": [
146
]
} |
572edac4dfa6aa1500f8d46d | Transistor | The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. First conceived by Julius Lilienfeld in 1926 and practically implemented in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and Bardeen, Brattain, and Shockley shared the 1956 Nobel Prize in Physics for their achievement. | When was the first transistor implemented for practical use? | {
"text": [
"1947"
],
"answer_start": [
203
]
} |
572edac4dfa6aa1500f8d46e | Transistor | The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. First conceived by Julius Lilienfeld in 1926 and practically implemented in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and Bardeen, Brattain, and Shockley shared the 1956 Nobel Prize in Physics for their achievement. | When did the implementers receive a Nobel Prize for making the transistor? | {
"text": [
"1956"
],
"answer_start": [
550
]
} |
572edac4dfa6aa1500f8d46f | Transistor | The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. First conceived by Julius Lilienfeld in 1926 and practically implemented in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and Bardeen, Brattain, and Shockley shared the 1956 Nobel Prize in Physics for their achievement. | What list is the transistor on? | {
"text": [
"list of IEEE milestones in electronics"
],
"answer_start": [
463
]
} |
572edbc103f9891900756a95 | Transistor | The thermionic triode, a vacuum tube invented in 1907, enabled amplified radio technology and long-distance telephony. The triode, however, was a fragile device that consumed a lot of power. Physicist Julius Edgar Lilienfeld filed a patent for a field-effect transistor (FET) in Canada in 1925, which was intended to be a solid-state replacement for the triode. Lilienfeld also filed identical patents in the United States in 1926 and 1928. However, Lilienfeld did not publish any research articles about his devices nor did his patents cite any specific examples of a working prototype. Because the production of high-quality semiconductor materials was still decades away, Lilienfeld's solid-state amplifier ideas would not have found practical use in the 1920s and 1930s, even if such a device had been built. In 1934, German inventor Oskar Heil patented a similar device. | When was the thermionic triode invented? | {
"text": [
"1907"
],
"answer_start": [
49
]
} |
572edbc103f9891900756a96 | Transistor | The thermionic triode, a vacuum tube invented in 1907, enabled amplified radio technology and long-distance telephony. The triode, however, was a fragile device that consumed a lot of power. Physicist Julius Edgar Lilienfeld filed a patent for a field-effect transistor (FET) in Canada in 1925, which was intended to be a solid-state replacement for the triode. Lilienfeld also filed identical patents in the United States in 1926 and 1928. However, Lilienfeld did not publish any research articles about his devices nor did his patents cite any specific examples of a working prototype. Because the production of high-quality semiconductor materials was still decades away, Lilienfeld's solid-state amplifier ideas would not have found practical use in the 1920s and 1930s, even if such a device had been built. In 1934, German inventor Oskar Heil patented a similar device. | What was the purpose of the thermionic triode? | {
"text": [
"amplified radio technology and long-distance telephony"
],
"answer_start": [
63
]
} |
572edbc103f9891900756a97 | Transistor | The thermionic triode, a vacuum tube invented in 1907, enabled amplified radio technology and long-distance telephony. The triode, however, was a fragile device that consumed a lot of power. Physicist Julius Edgar Lilienfeld filed a patent for a field-effect transistor (FET) in Canada in 1925, which was intended to be a solid-state replacement for the triode. Lilienfeld also filed identical patents in the United States in 1926 and 1928. However, Lilienfeld did not publish any research articles about his devices nor did his patents cite any specific examples of a working prototype. Because the production of high-quality semiconductor materials was still decades away, Lilienfeld's solid-state amplifier ideas would not have found practical use in the 1920s and 1930s, even if such a device had been built. In 1934, German inventor Oskar Heil patented a similar device. | Who filed a patent for the field-effect transistor? | {
"text": [
"Physicist Julius Edgar Lilienfeld"
],
"answer_start": [
191
]
} |
572edbc103f9891900756a98 | Transistor | The thermionic triode, a vacuum tube invented in 1907, enabled amplified radio technology and long-distance telephony. The triode, however, was a fragile device that consumed a lot of power. Physicist Julius Edgar Lilienfeld filed a patent for a field-effect transistor (FET) in Canada in 1925, which was intended to be a solid-state replacement for the triode. Lilienfeld also filed identical patents in the United States in 1926 and 1928. However, Lilienfeld did not publish any research articles about his devices nor did his patents cite any specific examples of a working prototype. Because the production of high-quality semiconductor materials was still decades away, Lilienfeld's solid-state amplifier ideas would not have found practical use in the 1920s and 1930s, even if such a device had been built. In 1934, German inventor Oskar Heil patented a similar device. | Where did Lilienfeld file his patent? | {
"text": [
"Canada"
],
"answer_start": [
279
]
} |
572edbc103f9891900756a99 | Transistor | The thermionic triode, a vacuum tube invented in 1907, enabled amplified radio technology and long-distance telephony. The triode, however, was a fragile device that consumed a lot of power. Physicist Julius Edgar Lilienfeld filed a patent for a field-effect transistor (FET) in Canada in 1925, which was intended to be a solid-state replacement for the triode. Lilienfeld also filed identical patents in the United States in 1926 and 1928. However, Lilienfeld did not publish any research articles about his devices nor did his patents cite any specific examples of a working prototype. Because the production of high-quality semiconductor materials was still decades away, Lilienfeld's solid-state amplifier ideas would not have found practical use in the 1920s and 1930s, even if such a device had been built. In 1934, German inventor Oskar Heil patented a similar device. | What year did Lilienfeld file his patent? | {
"text": [
"1925"
],
"answer_start": [
289
]
} |
572edd9ecb0c0d14000f1636 | Transistor | From November 17, 1947 to December 23, 1947, John Bardeen and Walter Brattain at AT&T's Bell Labs in the United States performed experiments and observed that when two gold point contacts were applied to a crystal of germanium, a signal was produced with the output power greater than the input. Solid State Physics Group leader William Shockley saw the potential in this, and over the next few months worked to greatly expand the knowledge of semiconductors. The term transistor was coined by John R. Pierce as a contraction of the term transresistance. According to Lillian Hoddeson and Vicki Daitch, authors of a biography of John Bardeen, Shockley had proposed that Bell Labs' first patent for a transistor should be based on the field-effect and that he be named as the inventor. Having unearthed Lilienfeld’s patents that went into obscurity years earlier, lawyers at Bell Labs advised against Shockley's proposal because the idea of a field-effect transistor that used an electric field as a "grid" was not new. Instead, what Bardeen, Brattain, and Shockley invented in 1947 was the first point-contact transistor. In acknowledgement of this accomplishment, Shockley, Bardeen, and Brattain were jointly awarded the 1956 Nobel Prize in Physics "for their researches on semiconductors and their discovery of the transistor effect." | At what time did Bardeen and Brattain experiment on increasing signal output? | {
"text": [
"November 17, 1947 to December 23, 1947"
],
"answer_start": [
5
]
} |
572edd9ecb0c0d14000f1637 | Transistor | From November 17, 1947 to December 23, 1947, John Bardeen and Walter Brattain at AT&T's Bell Labs in the United States performed experiments and observed that when two gold point contacts were applied to a crystal of germanium, a signal was produced with the output power greater than the input. Solid State Physics Group leader William Shockley saw the potential in this, and over the next few months worked to greatly expand the knowledge of semiconductors. The term transistor was coined by John R. Pierce as a contraction of the term transresistance. According to Lillian Hoddeson and Vicki Daitch, authors of a biography of John Bardeen, Shockley had proposed that Bell Labs' first patent for a transistor should be based on the field-effect and that he be named as the inventor. Having unearthed Lilienfeld’s patents that went into obscurity years earlier, lawyers at Bell Labs advised against Shockley's proposal because the idea of a field-effect transistor that used an electric field as a "grid" was not new. Instead, what Bardeen, Brattain, and Shockley invented in 1947 was the first point-contact transistor. In acknowledgement of this accomplishment, Shockley, Bardeen, and Brattain were jointly awarded the 1956 Nobel Prize in Physics "for their researches on semiconductors and their discovery of the transistor effect." | What were gold contacts attached to to increase signal output? | {
"text": [
"germanium"
],
"answer_start": [
217
]
} |
572edd9ecb0c0d14000f1638 | Transistor | From November 17, 1947 to December 23, 1947, John Bardeen and Walter Brattain at AT&T's Bell Labs in the United States performed experiments and observed that when two gold point contacts were applied to a crystal of germanium, a signal was produced with the output power greater than the input. Solid State Physics Group leader William Shockley saw the potential in this, and over the next few months worked to greatly expand the knowledge of semiconductors. The term transistor was coined by John R. Pierce as a contraction of the term transresistance. According to Lillian Hoddeson and Vicki Daitch, authors of a biography of John Bardeen, Shockley had proposed that Bell Labs' first patent for a transistor should be based on the field-effect and that he be named as the inventor. Having unearthed Lilienfeld’s patents that went into obscurity years earlier, lawyers at Bell Labs advised against Shockley's proposal because the idea of a field-effect transistor that used an electric field as a "grid" was not new. Instead, what Bardeen, Brattain, and Shockley invented in 1947 was the first point-contact transistor. In acknowledgement of this accomplishment, Shockley, Bardeen, and Brattain were jointly awarded the 1956 Nobel Prize in Physics "for their researches on semiconductors and their discovery of the transistor effect." | Who was the Solid State Physics Group Leader? | {
"text": [
"William Shockley"
],
"answer_start": [
329
]
} |
572edd9ecb0c0d14000f1639 | Transistor | From November 17, 1947 to December 23, 1947, John Bardeen and Walter Brattain at AT&T's Bell Labs in the United States performed experiments and observed that when two gold point contacts were applied to a crystal of germanium, a signal was produced with the output power greater than the input. Solid State Physics Group leader William Shockley saw the potential in this, and over the next few months worked to greatly expand the knowledge of semiconductors. The term transistor was coined by John R. Pierce as a contraction of the term transresistance. According to Lillian Hoddeson and Vicki Daitch, authors of a biography of John Bardeen, Shockley had proposed that Bell Labs' first patent for a transistor should be based on the field-effect and that he be named as the inventor. Having unearthed Lilienfeld’s patents that went into obscurity years earlier, lawyers at Bell Labs advised against Shockley's proposal because the idea of a field-effect transistor that used an electric field as a "grid" was not new. Instead, what Bardeen, Brattain, and Shockley invented in 1947 was the first point-contact transistor. In acknowledgement of this accomplishment, Shockley, Bardeen, and Brattain were jointly awarded the 1956 Nobel Prize in Physics "for their researches on semiconductors and their discovery of the transistor effect." | Who came up with the term transistor? | {
"text": [
"John R. Pierce"
],
"answer_start": [
494
]
} |
572edd9ecb0c0d14000f163a | Transistor | From November 17, 1947 to December 23, 1947, John Bardeen and Walter Brattain at AT&T's Bell Labs in the United States performed experiments and observed that when two gold point contacts were applied to a crystal of germanium, a signal was produced with the output power greater than the input. Solid State Physics Group leader William Shockley saw the potential in this, and over the next few months worked to greatly expand the knowledge of semiconductors. The term transistor was coined by John R. Pierce as a contraction of the term transresistance. According to Lillian Hoddeson and Vicki Daitch, authors of a biography of John Bardeen, Shockley had proposed that Bell Labs' first patent for a transistor should be based on the field-effect and that he be named as the inventor. Having unearthed Lilienfeld’s patents that went into obscurity years earlier, lawyers at Bell Labs advised against Shockley's proposal because the idea of a field-effect transistor that used an electric field as a "grid" was not new. Instead, what Bardeen, Brattain, and Shockley invented in 1947 was the first point-contact transistor. In acknowledgement of this accomplishment, Shockley, Bardeen, and Brattain were jointly awarded the 1956 Nobel Prize in Physics "for their researches on semiconductors and their discovery of the transistor effect." | Why was the term transistor used? | {
"text": [
"a contraction of the term transresistance"
],
"answer_start": [
512
]
} |
572edf1e03f9891900756a9f | Transistor | In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947. By June 1948, witnessing currents flowing through point-contacts, Mataré produced consistent results using samples of germanium produced by Welker, similar to what Bardeen and Brattain had accomplished earlier in December 1947. Realizing that Bell Labs' scientists had already invented the transistor before them, the company rushed to get its "transistron" into production for amplified use in France's telephone network. | In what year was the point-contact transistor invented? | {
"text": [
"1948"
],
"answer_start": [
3
]
} |
572edf1e03f9891900756aa0 | Transistor | In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947. By June 1948, witnessing currents flowing through point-contacts, Mataré produced consistent results using samples of germanium produced by Welker, similar to what Bardeen and Brattain had accomplished earlier in December 1947. Realizing that Bell Labs' scientists had already invented the transistor before them, the company rushed to get its "transistron" into production for amplified use in France's telephone network. | Who invented the point-contact transistor? | {
"text": [
"Herbert Mataré and Heinrich Welker"
],
"answer_start": [
86
]
} |
572edf1e03f9891900756aa1 | Transistor | In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947. By June 1948, witnessing currents flowing through point-contacts, Mataré produced consistent results using samples of germanium produced by Welker, similar to what Bardeen and Brattain had accomplished earlier in December 1947. Realizing that Bell Labs' scientists had already invented the transistor before them, the company rushed to get its "transistron" into production for amplified use in France's telephone network. | Where were Matare and Welker working when inventing the point-contact transistor? | {
"text": [
"Compagnie des Freins et Signaux"
],
"answer_start": [
142
]
} |
572edf1e03f9891900756aa2 | Transistor | In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947. By June 1948, witnessing currents flowing through point-contacts, Mataré produced consistent results using samples of germanium produced by Welker, similar to what Bardeen and Brattain had accomplished earlier in December 1947. Realizing that Bell Labs' scientists had already invented the transistor before them, the company rushed to get its "transistron" into production for amplified use in France's telephone network. | What was the name of Matare and Welker's transistor? | {
"text": [
"transistron"
],
"answer_start": [
788
]
} |
572edf1e03f9891900756aa3 | Transistor | In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947. By June 1948, witnessing currents flowing through point-contacts, Mataré produced consistent results using samples of germanium produced by Welker, similar to what Bardeen and Brattain had accomplished earlier in December 1947. Realizing that Bell Labs' scientists had already invented the transistor before them, the company rushed to get its "transistron" into production for amplified use in France's telephone network. | What was the transistron used for? | {
"text": [
"amplified use in France's telephone network"
],
"answer_start": [
821
]
} |
572ee0cc03f9891900756ab3 | Transistor | Although several companies each produce over a billion individually packaged (known as discrete) transistors every year, the vast majority of transistors are now produced in integrated circuits (often shortened to IC, microchips or simply chips), along with diodes, resistors, capacitors and other electronic components, to produce complete electronic circuits. A logic gate consists of up to about twenty transistors whereas an advanced microprocessor, as of 2009, can use as many as 3 billion transistors (MOSFETs). "About 60 million transistors were built in 2002… for [each] man, woman, and child on Earth." | How many transistors make up a logic gate? | {
"text": [
"up to about twenty transistors"
],
"answer_start": [
387
]
} |
572ee0cc03f9891900756ab4 | Transistor | Although several companies each produce over a billion individually packaged (known as discrete) transistors every year, the vast majority of transistors are now produced in integrated circuits (often shortened to IC, microchips or simply chips), along with diodes, resistors, capacitors and other electronic components, to produce complete electronic circuits. A logic gate consists of up to about twenty transistors whereas an advanced microprocessor, as of 2009, can use as many as 3 billion transistors (MOSFETs). "About 60 million transistors were built in 2002… for [each] man, woman, and child on Earth." | How many transistors make up a microprocessor? | {
"text": [
"as many as 3 billion transistors"
],
"answer_start": [
474
]
} |
572ee0cc03f9891900756ab6 | Transistor | Although several companies each produce over a billion individually packaged (known as discrete) transistors every year, the vast majority of transistors are now produced in integrated circuits (often shortened to IC, microchips or simply chips), along with diodes, resistors, capacitors and other electronic components, to produce complete electronic circuits. A logic gate consists of up to about twenty transistors whereas an advanced microprocessor, as of 2009, can use as many as 3 billion transistors (MOSFETs). "About 60 million transistors were built in 2002… for [each] man, woman, and child on Earth." | How many individually packaged transistors are produced each year? | {
"text": [
"over a billion"
],
"answer_start": [
40
]
} |
572ee0cc03f9891900756ab7 | Transistor | Although several companies each produce over a billion individually packaged (known as discrete) transistors every year, the vast majority of transistors are now produced in integrated circuits (often shortened to IC, microchips or simply chips), along with diodes, resistors, capacitors and other electronic components, to produce complete electronic circuits. A logic gate consists of up to about twenty transistors whereas an advanced microprocessor, as of 2009, can use as many as 3 billion transistors (MOSFETs). "About 60 million transistors were built in 2002… for [each] man, woman, and child on Earth." | What are some abbreviations for integrated circuits? | {
"text": [
"IC, microchips or simply chips"
],
"answer_start": [
214
]
} |
572ee21dc246551400ce476c | Transistor | The essential usefulness of a transistor comes from its ability to use a small signal applied between one pair of its terminals to control a much larger signal at another pair of terminals. This property is called gain. It can produce a stronger output signal, a voltage or current, which is proportional to a weaker input signal; that is, it can act as an amplifier. Alternatively, the transistor can be used to turn current on or off in a circuit as an electrically controlled switch, where the amount of current is determined by other circuit elements. | Why is a transistor so useful? | {
"text": [
"gain"
],
"answer_start": [
214
]
} |
572ee21dc246551400ce476d | Transistor | The essential usefulness of a transistor comes from its ability to use a small signal applied between one pair of its terminals to control a much larger signal at another pair of terminals. This property is called gain. It can produce a stronger output signal, a voltage or current, which is proportional to a weaker input signal; that is, it can act as an amplifier. Alternatively, the transistor can be used to turn current on or off in a circuit as an electrically controlled switch, where the amount of current is determined by other circuit elements. | What is gain? | {
"text": [
"it can act as an amplifier"
],
"answer_start": [
340
]
} |
572ee21dc246551400ce476e | Transistor | The essential usefulness of a transistor comes from its ability to use a small signal applied between one pair of its terminals to control a much larger signal at another pair of terminals. This property is called gain. It can produce a stronger output signal, a voltage or current, which is proportional to a weaker input signal; that is, it can act as an amplifier. Alternatively, the transistor can be used to turn current on or off in a circuit as an electrically controlled switch, where the amount of current is determined by other circuit elements. | What is an additional use of the transistor? | {
"text": [
"turn current on or off in a circuit"
],
"answer_start": [
413
]
} |
572ee21dc246551400ce476f | Transistor | The essential usefulness of a transistor comes from its ability to use a small signal applied between one pair of its terminals to control a much larger signal at another pair of terminals. This property is called gain. It can produce a stronger output signal, a voltage or current, which is proportional to a weaker input signal; that is, it can act as an amplifier. Alternatively, the transistor can be used to turn current on or off in a circuit as an electrically controlled switch, where the amount of current is determined by other circuit elements. | What determines the amount of current in an electrically controlled switch? | {
"text": [
"other circuit elements"
],
"answer_start": [
532
]
} |
572ee3c7c246551400ce4788 | Transistor | There are two types of transistors, which have slight differences in how they are used in a circuit. A bipolar transistor has terminals labeled base, collector, and emitter. A small current at the base terminal (that is, flowing between the base and the emitter) can control or switch a much larger current between the collector and emitter terminals. For a field-effect transistor, the terminals are labeled gate, source, and drain, and a voltage at the gate can control a current between source and drain. | How many types of transistors are there? | {
"text": [
"two"
],
"answer_start": [
10
]
} |
572ee3c7c246551400ce4789 | Transistor | There are two types of transistors, which have slight differences in how they are used in a circuit. A bipolar transistor has terminals labeled base, collector, and emitter. A small current at the base terminal (that is, flowing between the base and the emitter) can control or switch a much larger current between the collector and emitter terminals. For a field-effect transistor, the terminals are labeled gate, source, and drain, and a voltage at the gate can control a current between source and drain. | What are the components of a bipolar transistor? | {
"text": [
"base, collector, and emitter"
],
"answer_start": [
144
]
} |
572ee3c7c246551400ce478a | Transistor | There are two types of transistors, which have slight differences in how they are used in a circuit. A bipolar transistor has terminals labeled base, collector, and emitter. A small current at the base terminal (that is, flowing between the base and the emitter) can control or switch a much larger current between the collector and emitter terminals. For a field-effect transistor, the terminals are labeled gate, source, and drain, and a voltage at the gate can control a current between source and drain. | What controls the large current between the collector and emitter? | {
"text": [
"A small current at the base terminal"
],
"answer_start": [
174
]
} |
572ee3c7c246551400ce478b | Transistor | There are two types of transistors, which have slight differences in how they are used in a circuit. A bipolar transistor has terminals labeled base, collector, and emitter. A small current at the base terminal (that is, flowing between the base and the emitter) can control or switch a much larger current between the collector and emitter terminals. For a field-effect transistor, the terminals are labeled gate, source, and drain, and a voltage at the gate can control a current between source and drain. | What are the components of a field-effect transistor? | {
"text": [
"gate, source, and drain"
],
"answer_start": [
409
]
} |
572ee3c7c246551400ce478c | Transistor | There are two types of transistors, which have slight differences in how they are used in a circuit. A bipolar transistor has terminals labeled base, collector, and emitter. A small current at the base terminal (that is, flowing between the base and the emitter) can control or switch a much larger current between the collector and emitter terminals. For a field-effect transistor, the terminals are labeled gate, source, and drain, and a voltage at the gate can control a current between source and drain. | In a field-effect transistor, what controls the current between the source and drain? | {
"text": [
"a voltage at the gate"
],
"answer_start": [
438
]
} |
572ee52903f9891900756ac7 | Transistor | In a grounded-emitter transistor circuit, such as the light-switch circuit shown, as the base voltage rises, the emitter and collector currents rise exponentially. The collector voltage drops because of reduced resistance from collector to emitter. If the voltage difference between the collector and emitter were zero (or near zero), the collector current would be limited only by the load resistance (light bulb) and the supply voltage. This is called saturation because current is flowing from collector to emitter freely. When saturated, the switch is said to be on. | Why does the collector voltage drop in grounded-emitter transistor circuits? | {
"text": [
"reduced resistance from collector to emitter"
],
"answer_start": [
203
]
} |
572ee52903f9891900756ac9 | Transistor | In a grounded-emitter transistor circuit, such as the light-switch circuit shown, as the base voltage rises, the emitter and collector currents rise exponentially. The collector voltage drops because of reduced resistance from collector to emitter. If the voltage difference between the collector and emitter were zero (or near zero), the collector current would be limited only by the load resistance (light bulb) and the supply voltage. This is called saturation because current is flowing from collector to emitter freely. When saturated, the switch is said to be on. | What is the term for a zero difference between collector and emitter? | {
"text": [
"saturation"
],
"answer_start": [
454
]
} |
572ee52903f9891900756aca | Transistor | In a grounded-emitter transistor circuit, such as the light-switch circuit shown, as the base voltage rises, the emitter and collector currents rise exponentially. The collector voltage drops because of reduced resistance from collector to emitter. If the voltage difference between the collector and emitter were zero (or near zero), the collector current would be limited only by the load resistance (light bulb) and the supply voltage. This is called saturation because current is flowing from collector to emitter freely. When saturated, the switch is said to be on. | Why is the term saturation named as such? | {
"text": [
"current is flowing from collector to emitter freely"
],
"answer_start": [
473
]
} |
572ee52903f9891900756acb | Transistor | In a grounded-emitter transistor circuit, such as the light-switch circuit shown, as the base voltage rises, the emitter and collector currents rise exponentially. The collector voltage drops because of reduced resistance from collector to emitter. If the voltage difference between the collector and emitter were zero (or near zero), the collector current would be limited only by the load resistance (light bulb) and the supply voltage. This is called saturation because current is flowing from collector to emitter freely. When saturated, the switch is said to be on. | What position is the switch in when saturated? | {
"text": [
"on"
],
"answer_start": [
567
]
} |
572ee71203f9891900756adb | Transistor | Providing sufficient base drive current is a key problem in the use of bipolar transistors as switches. The transistor provides current gain, allowing a relatively large current in the collector to be switched by a much smaller current into the base terminal. The ratio of these currents varies depending on the type of transistor, and even for a particular type, varies depending on the collector current. In the example light-switch circuit shown, the resistor is chosen to provide enough base current to ensure the transistor will be saturated. | What is a major problem with using bipolar transistors as switches? | {
"text": [
"Providing sufficient base drive current"
],
"answer_start": [
0
]
} |
572ee71203f9891900756adc | Transistor | Providing sufficient base drive current is a key problem in the use of bipolar transistors as switches. The transistor provides current gain, allowing a relatively large current in the collector to be switched by a much smaller current into the base terminal. The ratio of these currents varies depending on the type of transistor, and even for a particular type, varies depending on the collector current. In the example light-switch circuit shown, the resistor is chosen to provide enough base current to ensure the transistor will be saturated. | What does the transistor provide? | {
"text": [
"current gain"
],
"answer_start": [
128
]
} |
572ee71203f9891900756add | Transistor | Providing sufficient base drive current is a key problem in the use of bipolar transistors as switches. The transistor provides current gain, allowing a relatively large current in the collector to be switched by a much smaller current into the base terminal. The ratio of these currents varies depending on the type of transistor, and even for a particular type, varies depending on the collector current. In the example light-switch circuit shown, the resistor is chosen to provide enough base current to ensure the transistor will be saturated. | What determines the current ratio in transistors? | {
"text": [
"the type of transistor"
],
"answer_start": [
308
]
} |
572ee71203f9891900756ade | Transistor | Providing sufficient base drive current is a key problem in the use of bipolar transistors as switches. The transistor provides current gain, allowing a relatively large current in the collector to be switched by a much smaller current into the base terminal. The ratio of these currents varies depending on the type of transistor, and even for a particular type, varies depending on the collector current. In the example light-switch circuit shown, the resistor is chosen to provide enough base current to ensure the transistor will be saturated. | If the type of transistor is the same what determines the current ratio? | {
"text": [
"collector current"
],
"answer_start": [
388
]
} |
572f4fb704bcaa1900d7683a | Transistor | In a switching circuit, the idea is to simulate, as near as possible, the ideal switch having the properties of open circuit when off, short circuit when on, and an instantaneous transition between the two states. Parameters are chosen such that the "off" output is limited to leakage currents too small to affect connected circuitry; the resistance of the transistor in the "on" state is too small to affect circuitry; and the transition between the two states is fast enough not to have a detrimental effect. | What is a switching circuit trying to simulate when on? | {
"text": [
"short circuit"
],
"answer_start": [
135
]
} |
572f4fb704bcaa1900d7683b | Transistor | In a switching circuit, the idea is to simulate, as near as possible, the ideal switch having the properties of open circuit when off, short circuit when on, and an instantaneous transition between the two states. Parameters are chosen such that the "off" output is limited to leakage currents too small to affect connected circuitry; the resistance of the transistor in the "on" state is too small to affect circuitry; and the transition between the two states is fast enough not to have a detrimental effect. | What is a switching circuit trying to simulate when off? | {
"text": [
"open circuit"
],
"answer_start": [
112
]
} |
572f4fb704bcaa1900d7683c | Transistor | In a switching circuit, the idea is to simulate, as near as possible, the ideal switch having the properties of open circuit when off, short circuit when on, and an instantaneous transition between the two states. Parameters are chosen such that the "off" output is limited to leakage currents too small to affect connected circuitry; the resistance of the transistor in the "on" state is too small to affect circuitry; and the transition between the two states is fast enough not to have a detrimental effect. | How quickly does the change from open circuit to short circuit happen? | {
"text": [
"instantaneous"
],
"answer_start": [
165
]
} |
572f50cbb2c2fd1400568001 | Transistor | Bipolar transistors are so named because they conduct by using both majority and minority carriers. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes, and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p–n–p transistor). This construction produces two p–n junctions: a base–emitter junction and a base–collector junction, separated by a thin region of semiconductor known as the base region (two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor). | What gives bipolar transistors their name? | {
"text": [
"they conduct by using both majority and minority carriers"
],
"answer_start": [
41
]
} |
572f50cbb2c2fd1400568002 | Transistor | Bipolar transistors are so named because they conduct by using both majority and minority carriers. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes, and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p–n–p transistor). This construction produces two p–n junctions: a base–emitter junction and a base–collector junction, separated by a thin region of semiconductor known as the base region (two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor). | What was the first mass-produced transistor? | {
"text": [
"bipolar junction transistor"
],
"answer_start": [
104
]
} |
572f50cbb2c2fd1400568003 | Transistor | Bipolar transistors are so named because they conduct by using both majority and minority carriers. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes, and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p–n–p transistor). This construction produces two p–n junctions: a base–emitter junction and a base–collector junction, separated by a thin region of semiconductor known as the base region (two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor). | What is the bipolar junction transistor a combination of? | {
"text": [
"two junction diodes"
],
"answer_start": [
203
]
} |
572f50cbb2c2fd1400568004 | Transistor | Bipolar transistors are so named because they conduct by using both majority and minority carriers. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes, and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p–n–p transistor). This construction produces two p–n junctions: a base–emitter junction and a base–collector junction, separated by a thin region of semiconductor known as the base region (two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor). | What is the name for a layer of p-type semiconductor set between two n-type semiconductors? | {
"text": [
"n–p–n transistor"
],
"answer_start": [
334
]
} |
572f50cbb2c2fd1400568005 | Transistor | Bipolar transistors are so named because they conduct by using both majority and minority carriers. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes, and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p–n–p transistor). This construction produces two p–n junctions: a base–emitter junction and a base–collector junction, separated by a thin region of semiconductor known as the base region (two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor). | What is the name for a layer of n-type semiconductor set between two p-type semiconductors? | {
"text": [
"p–n–p transistor"
],
"answer_start": [
441
]
} |
572f53ca04bcaa1900d76853 | Transistor | BJTs have three terminals, corresponding to the three layers of semiconductor—an emitter, a base, and a collector. They are useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current. In an n–p–n transistor operating in the active region, the emitter–base junction is forward biased (electrons and holes recombine at the junction), and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased (electrons and holes are formed at, and move away from the junction) base–collector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled. Collector current is approximately β (common-emitter current gain) times the base current. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. | How many terminals do BJTs have? | {
"text": [
"three"
],
"answer_start": [
10
]
} |
572f53ca04bcaa1900d76854 | Transistor | BJTs have three terminals, corresponding to the three layers of semiconductor—an emitter, a base, and a collector. They are useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current. In an n–p–n transistor operating in the active region, the emitter–base junction is forward biased (electrons and holes recombine at the junction), and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased (electrons and holes are formed at, and move away from the junction) base–collector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled. Collector current is approximately β (common-emitter current gain) times the base current. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. | How many layers of semiconductor do BJTs have? | {
"text": [
"three"
],
"answer_start": [
48
]
} |
572f53ca04bcaa1900d76855 | Transistor | BJTs have three terminals, corresponding to the three layers of semiconductor—an emitter, a base, and a collector. They are useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current. In an n–p–n transistor operating in the active region, the emitter–base junction is forward biased (electrons and holes recombine at the junction), and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased (electrons and holes are formed at, and move away from the junction) base–collector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled. Collector current is approximately β (common-emitter current gain) times the base current. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. | What are the layers of semiconductor in a BJT? | {
"text": [
"an emitter, a base, and a collector"
],
"answer_start": [
78
]
} |
572f53ca04bcaa1900d76856 | Transistor | BJTs have three terminals, corresponding to the three layers of semiconductor—an emitter, a base, and a collector. They are useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current. In an n–p–n transistor operating in the active region, the emitter–base junction is forward biased (electrons and holes recombine at the junction), and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased (electrons and holes are formed at, and move away from the junction) base–collector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled. Collector current is approximately β (common-emitter current gain) times the base current. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. | How can one find the amount of collector current? | {
"text": [
"β (common-emitter current gain) times the base current"
],
"answer_start": [
945
]
} |
572f53ca04bcaa1900d76857 | Transistor | BJTs have three terminals, corresponding to the three layers of semiconductor—an emitter, a base, and a collector. They are useful in amplifiers because the currents at the emitter and collector are controllable by a relatively small base current. In an n–p–n transistor operating in the active region, the emitter–base junction is forward biased (electrons and holes recombine at the junction), and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased (electrons and holes are formed at, and move away from the junction) base–collector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled. Collector current is approximately β (common-emitter current gain) times the base current. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications. | What is the usual collector current for small-signal transistors? | {
"text": [
"greater than 100"
],
"answer_start": [
1017
]
} |
572f5b1004bcaa1900d7689c | Transistor | In a FET, the drain-to-source current flows via a conducting channel that connects the source region to the drain region. The conductivity is varied by the electric field that is produced when a voltage is applied between the gate and source terminals; hence the current flowing between the drain and source is controlled by the voltage applied between the gate and source. As the gate–source voltage (VGS) is increased, the drain–source current (IDS) increases exponentially for VGS below threshold, and then at a roughly quadratic rate (IGS ∝ (VGS − VT)2) (where VT is the threshold voltage at which drain current begins) in the "space-charge-limited" region above threshold. A quadratic behavior is not observed in modern devices, for example, at the 65 nm technology node. | What controls the current between the drain and source? | {
"text": [
"the voltage applied between the gate and source"
],
"answer_start": [
325
]
} |
572f5b1004bcaa1900d7689d | Transistor | In a FET, the drain-to-source current flows via a conducting channel that connects the source region to the drain region. The conductivity is varied by the electric field that is produced when a voltage is applied between the gate and source terminals; hence the current flowing between the drain and source is controlled by the voltage applied between the gate and source. As the gate–source voltage (VGS) is increased, the drain–source current (IDS) increases exponentially for VGS below threshold, and then at a roughly quadratic rate (IGS ∝ (VGS − VT)2) (where VT is the threshold voltage at which drain current begins) in the "space-charge-limited" region above threshold. A quadratic behavior is not observed in modern devices, for example, at the 65 nm technology node. | At what rate is the drain-source current increased when the gate-source current is increased? | {
"text": [
"a roughly quadratic rate"
],
"answer_start": [
513
]
} |
572f5b1004bcaa1900d7689e | Transistor | In a FET, the drain-to-source current flows via a conducting channel that connects the source region to the drain region. The conductivity is varied by the electric field that is produced when a voltage is applied between the gate and source terminals; hence the current flowing between the drain and source is controlled by the voltage applied between the gate and source. As the gate–source voltage (VGS) is increased, the drain–source current (IDS) increases exponentially for VGS below threshold, and then at a roughly quadratic rate (IGS ∝ (VGS − VT)2) (where VT is the threshold voltage at which drain current begins) in the "space-charge-limited" region above threshold. A quadratic behavior is not observed in modern devices, for example, at the 65 nm technology node. | Where is a quadratic behavior not observed? | {
"text": [
"in modern devices"
],
"answer_start": [
715
]
} |
572f8c1fa23a5019007fc721 | Transistor | FETs are divided into two families: junction FET (JFET) and insulated gate FET (IGFET). The IGFET is more commonly known as a metal–oxide–semiconductor FET (MOSFET), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a p–n diode with the channel which lies between the source and drain. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode. Also, both devices operate in the depletion mode, they both have a high input impedance, and they both conduct current under the control of an input voltage. | How many groups are FETs split into? | {
"text": [
"two"
],
"answer_start": [
22
]
} |
572f8c1fa23a5019007fc722 | Transistor | FETs are divided into two families: junction FET (JFET) and insulated gate FET (IGFET). The IGFET is more commonly known as a metal–oxide–semiconductor FET (MOSFET), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a p–n diode with the channel which lies between the source and drain. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode. Also, both devices operate in the depletion mode, they both have a high input impedance, and they both conduct current under the control of an input voltage. | What are the names of the groups of FETs | {
"text": [
"junction FET (JFET) and insulated gate FET (IGFET)"
],
"answer_start": [
36
]
} |
572f8c1fa23a5019007fc723 | Transistor | FETs are divided into two families: junction FET (JFET) and insulated gate FET (IGFET). The IGFET is more commonly known as a metal–oxide–semiconductor FET (MOSFET), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a p–n diode with the channel which lies between the source and drain. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode. Also, both devices operate in the depletion mode, they both have a high input impedance, and they both conduct current under the control of an input voltage. | What is the common term for an IFGET? | {
"text": [
"a metal–oxide–semiconductor FET (MOSFET)"
],
"answer_start": [
124
]
} |
572f8c1fa23a5019007fc724 | Transistor | FETs are divided into two families: junction FET (JFET) and insulated gate FET (IGFET). The IGFET is more commonly known as a metal–oxide–semiconductor FET (MOSFET), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a p–n diode with the channel which lies between the source and drain. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode. Also, both devices operate in the depletion mode, they both have a high input impedance, and they both conduct current under the control of an input voltage. | How is a JFET different from an IGFET? | {
"text": [
"the JFET gate forms a p–n diode with the channel"
],
"answer_start": [
294
]
} |
572f8c1fa23a5019007fc725 | Transistor | FETs are divided into two families: junction FET (JFET) and insulated gate FET (IGFET). The IGFET is more commonly known as a metal–oxide–semiconductor FET (MOSFET), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a p–n diode with the channel which lies between the source and drain. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode. Also, both devices operate in the depletion mode, they both have a high input impedance, and they both conduct current under the control of an input voltage. | What mode do both JFET and IGFET operate in? | {
"text": [
"depletion mode"
],
"answer_start": [
577
]
} |
572f9165a23a5019007fc771 | Transistor | FETs are further divided into depletion-mode and enhancement-mode types, depending on whether the channel is turned on or off with zero gate-to-source voltage. For enhancement mode, the channel is off at zero bias, and a gate potential can "enhance" the conduction. For the depletion mode, the channel is on at zero bias, and a gate potential (of the opposite polarity) can "deplete" the channel, reducing conduction. For either mode, a more positive gate voltage corresponds to a higher current for n-channel devices and a lower current for p-channel devices. Nearly all JFETs are depletion-mode because the diode junctions would forward bias and conduct if they were enhancement-mode devices; most IGFETs are enhancement-mode types. | How are FET's separated? | {
"text": [
"depletion-mode and enhancement-mode types"
],
"answer_start": [
30
]
} |
572f9165a23a5019007fc772 | Transistor | FETs are further divided into depletion-mode and enhancement-mode types, depending on whether the channel is turned on or off with zero gate-to-source voltage. For enhancement mode, the channel is off at zero bias, and a gate potential can "enhance" the conduction. For the depletion mode, the channel is on at zero bias, and a gate potential (of the opposite polarity) can "deplete" the channel, reducing conduction. For either mode, a more positive gate voltage corresponds to a higher current for n-channel devices and a lower current for p-channel devices. Nearly all JFETs are depletion-mode because the diode junctions would forward bias and conduct if they were enhancement-mode devices; most IGFETs are enhancement-mode types. | At what point is a channel off in enhancement-mode? | {
"text": [
"at zero bias"
],
"answer_start": [
201
]
} |
572f9165a23a5019007fc773 | Transistor | FETs are further divided into depletion-mode and enhancement-mode types, depending on whether the channel is turned on or off with zero gate-to-source voltage. For enhancement mode, the channel is off at zero bias, and a gate potential can "enhance" the conduction. For the depletion mode, the channel is on at zero bias, and a gate potential (of the opposite polarity) can "deplete" the channel, reducing conduction. For either mode, a more positive gate voltage corresponds to a higher current for n-channel devices and a lower current for p-channel devices. Nearly all JFETs are depletion-mode because the diode junctions would forward bias and conduct if they were enhancement-mode devices; most IGFETs are enhancement-mode types. | At what point is a channel on in depletion-mode? | {
"text": [
"at zero bias"
],
"answer_start": [
308
]
} |
572f9165a23a5019007fc774 | Transistor | FETs are further divided into depletion-mode and enhancement-mode types, depending on whether the channel is turned on or off with zero gate-to-source voltage. For enhancement mode, the channel is off at zero bias, and a gate potential can "enhance" the conduction. For the depletion mode, the channel is on at zero bias, and a gate potential (of the opposite polarity) can "deplete" the channel, reducing conduction. For either mode, a more positive gate voltage corresponds to a higher current for n-channel devices and a lower current for p-channel devices. Nearly all JFETs are depletion-mode because the diode junctions would forward bias and conduct if they were enhancement-mode devices; most IGFETs are enhancement-mode types. | What channel corresponds with high current? | {
"text": [
"n-channel devices"
],
"answer_start": [
500
]
} |
572f9165a23a5019007fc775 | Transistor | FETs are further divided into depletion-mode and enhancement-mode types, depending on whether the channel is turned on or off with zero gate-to-source voltage. For enhancement mode, the channel is off at zero bias, and a gate potential can "enhance" the conduction. For the depletion mode, the channel is on at zero bias, and a gate potential (of the opposite polarity) can "deplete" the channel, reducing conduction. For either mode, a more positive gate voltage corresponds to a higher current for n-channel devices and a lower current for p-channel devices. Nearly all JFETs are depletion-mode because the diode junctions would forward bias and conduct if they were enhancement-mode devices; most IGFETs are enhancement-mode types. | What channel corresponds with low current? | {
"text": [
"p-channel devices"
],
"answer_start": [
542
]
} |
572f958ca23a5019007fc7b7 | Transistor | The bipolar junction transistor (BJT) was the most commonly used transistor in the 1960s and 70s. Even after MOSFETs became widely available, the BJT remained the transistor of choice for many analog circuits such as amplifiers because of their greater linearity and ease of manufacture. In integrated circuits, the desirable properties of MOSFETs allowed them to capture nearly all market share for digital circuits. Discrete MOSFETs can be applied in transistor applications, including analog circuits, voltage regulators, amplifiers, power transmitters and motor drivers. | What was the most frequently used transistor in the 1960s and 70s? | {
"text": [
"bipolar junction transistor"
],
"answer_start": [
4
]
} |
572f958ca23a5019007fc7b8 | Transistor | The bipolar junction transistor (BJT) was the most commonly used transistor in the 1960s and 70s. Even after MOSFETs became widely available, the BJT remained the transistor of choice for many analog circuits such as amplifiers because of their greater linearity and ease of manufacture. In integrated circuits, the desirable properties of MOSFETs allowed them to capture nearly all market share for digital circuits. Discrete MOSFETs can be applied in transistor applications, including analog circuits, voltage regulators, amplifiers, power transmitters and motor drivers. | Why were BJTs so popular? | {
"text": [
"their greater linearity and ease of manufacture"
],
"answer_start": [
239
]
} |
572f958ca23a5019007fc7ba | Transistor | The bipolar junction transistor (BJT) was the most commonly used transistor in the 1960s and 70s. Even after MOSFETs became widely available, the BJT remained the transistor of choice for many analog circuits such as amplifiers because of their greater linearity and ease of manufacture. In integrated circuits, the desirable properties of MOSFETs allowed them to capture nearly all market share for digital circuits. Discrete MOSFETs can be applied in transistor applications, including analog circuits, voltage regulators, amplifiers, power transmitters and motor drivers. | What were the most popular digital circuits of the time? | {
"text": [
"MOSFETs"
],
"answer_start": [
340
]
} |
572f97a804bcaa1900d76abf | Transistor | The Pro Electron standard, the European Electronic Component Manufacturers Association part numbering scheme, begins with two letters: the first gives the semiconductor type (A for germanium, B for silicon, and C for materials like GaAs); the second letter denotes the intended use (A for diode, C for general-purpose transistor, etc.). A 3-digit sequence number (or one letter then 2 digits, for industrial types) follows. With early devices this indicated the case type. Suffixes may be used, with a letter (e.g. "C" often means high hFE, such as in: BC549C) or other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A). The more common prefixes are: | What is the Pro Electron standard? | {
"text": [
"European Electronic Component Manufacturers Association part numbering scheme"
],
"answer_start": [
31
]
} |
572f97a804bcaa1900d76ac0 | Transistor | The Pro Electron standard, the European Electronic Component Manufacturers Association part numbering scheme, begins with two letters: the first gives the semiconductor type (A for germanium, B for silicon, and C for materials like GaAs); the second letter denotes the intended use (A for diode, C for general-purpose transistor, etc.). A 3-digit sequence number (or one letter then 2 digits, for industrial types) follows. With early devices this indicated the case type. Suffixes may be used, with a letter (e.g. "C" often means high hFE, such as in: BC549C) or other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A). The more common prefixes are: | How many letters does the part numbering scheme begin with? | {
"text": [
"two letters"
],
"answer_start": [
122
]
} |
572f97a804bcaa1900d76ac1 | Transistor | The Pro Electron standard, the European Electronic Component Manufacturers Association part numbering scheme, begins with two letters: the first gives the semiconductor type (A for germanium, B for silicon, and C for materials like GaAs); the second letter denotes the intended use (A for diode, C for general-purpose transistor, etc.). A 3-digit sequence number (or one letter then 2 digits, for industrial types) follows. With early devices this indicated the case type. Suffixes may be used, with a letter (e.g. "C" often means high hFE, such as in: BC549C) or other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A). The more common prefixes are: | What is the first letter in the part numbering scheme? | {
"text": [
"the semiconductor type"
],
"answer_start": [
151
]
} |
572f97a804bcaa1900d76ac2 | Transistor | The Pro Electron standard, the European Electronic Component Manufacturers Association part numbering scheme, begins with two letters: the first gives the semiconductor type (A for germanium, B for silicon, and C for materials like GaAs); the second letter denotes the intended use (A for diode, C for general-purpose transistor, etc.). A 3-digit sequence number (or one letter then 2 digits, for industrial types) follows. With early devices this indicated the case type. Suffixes may be used, with a letter (e.g. "C" often means high hFE, such as in: BC549C) or other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A). The more common prefixes are: | What is the second letter in the part numbering scheme? | {
"text": [
"the intended use"
],
"answer_start": [
265
]
} |
572f97a804bcaa1900d76ac3 | Transistor | The Pro Electron standard, the European Electronic Component Manufacturers Association part numbering scheme, begins with two letters: the first gives the semiconductor type (A for germanium, B for silicon, and C for materials like GaAs); the second letter denotes the intended use (A for diode, C for general-purpose transistor, etc.). A 3-digit sequence number (or one letter then 2 digits, for industrial types) follows. With early devices this indicated the case type. Suffixes may be used, with a letter (e.g. "C" often means high hFE, such as in: BC549C) or other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A). The more common prefixes are: | What follows the 2 letters in the part numbering scheme? | {
"text": [
"A 3-digit sequence number"
],
"answer_start": [
337
]
} |
572f9c99a23a5019007fc7d3 | Transistor | The JEDEC EIA370 transistor device numbers usually start with "2N", indicating a three-terminal device (dual-gate field-effect transistors are four-terminal devices, so begin with 3N), then a 2, 3 or 4-digit sequential number with no significance as to device properties (although early devices with low numbers tend to be germanium). For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix (such as "A") is sometimes used to indicate a newer variant, but rarely gain groupings. | What does the JEDEC EIA370 transistor number start with? | {
"text": [
"2N"
],
"answer_start": [
63
]
} |
572f9c99a23a5019007fc7d4 | Transistor | The JEDEC EIA370 transistor device numbers usually start with "2N", indicating a three-terminal device (dual-gate field-effect transistors are four-terminal devices, so begin with 3N), then a 2, 3 or 4-digit sequential number with no significance as to device properties (although early devices with low numbers tend to be germanium). For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix (such as "A") is sometimes used to indicate a newer variant, but rarely gain groupings. | what does the 2N is the JEDEC EIA370 mean? | {
"text": [
"a three-terminal device"
],
"answer_start": [
79
]
} |
572f9c99a23a5019007fc7d6 | Transistor | The JEDEC EIA370 transistor device numbers usually start with "2N", indicating a three-terminal device (dual-gate field-effect transistors are four-terminal devices, so begin with 3N), then a 2, 3 or 4-digit sequential number with no significance as to device properties (although early devices with low numbers tend to be germanium). For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix (such as "A") is sometimes used to indicate a newer variant, but rarely gain groupings. | What does a letter at the end of a device number mean? | {
"text": [
"a newer variant"
],
"answer_start": [
502
]
} |
572f9c99a23a5019007fc7d7 | Transistor | The JEDEC EIA370 transistor device numbers usually start with "2N", indicating a three-terminal device (dual-gate field-effect transistors are four-terminal devices, so begin with 3N), then a 2, 3 or 4-digit sequential number with no significance as to device properties (although early devices with low numbers tend to be germanium). For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix (such as "A") is sometimes used to indicate a newer variant, but rarely gain groupings. | What does the number 2N1301 indicate? | {
"text": [
"a p–n–p germanium switching transistor"
],
"answer_start": [
402
]
} |
572fab9fb2c2fd14005682fb | Transistor | Manufacturers of devices may have their own proprietary numbering system, for example CK722. Since devices are second-sourced, a manufacturer's prefix (like "MPF" in MPF102, which originally would denote a Motorola FET) now is an unreliable indicator of who made the device. Some proprietary naming schemes adopt parts of other naming schemes, for example a PN2222A is a (possibly Fairchild Semiconductor) 2N2222A in a plastic case (but a PN108 is a plastic version of a BC108, not a 2N108, while the PN100 is unrelated to other xx100 devices). | What was once an indicator of the devices creator? | {
"text": [
"a manufacturer's prefix"
],
"answer_start": [
127
]
} |
572fab9fb2c2fd14005682fc | Transistor | Manufacturers of devices may have their own proprietary numbering system, for example CK722. Since devices are second-sourced, a manufacturer's prefix (like "MPF" in MPF102, which originally would denote a Motorola FET) now is an unreliable indicator of who made the device. Some proprietary naming schemes adopt parts of other naming schemes, for example a PN2222A is a (possibly Fairchild Semiconductor) 2N2222A in a plastic case (but a PN108 is a plastic version of a BC108, not a 2N108, while the PN100 is unrelated to other xx100 devices). | What makes a manufacturer's prefix less reliable? | {
"text": [
"devices are second-sourced"
],
"answer_start": [
99
]
} |
572fab9fb2c2fd14005682fd | Transistor | Manufacturers of devices may have their own proprietary numbering system, for example CK722. Since devices are second-sourced, a manufacturer's prefix (like "MPF" in MPF102, which originally would denote a Motorola FET) now is an unreliable indicator of who made the device. Some proprietary naming schemes adopt parts of other naming schemes, for example a PN2222A is a (possibly Fairchild Semiconductor) 2N2222A in a plastic case (but a PN108 is a plastic version of a BC108, not a 2N108, while the PN100 is unrelated to other xx100 devices). | What is the marking for a 2N2222A in a plastic case? | {
"text": [
"PN2222A"
],
"answer_start": [
358
]
} |
572fab9fb2c2fd14005682fe | Transistor | Manufacturers of devices may have their own proprietary numbering system, for example CK722. Since devices are second-sourced, a manufacturer's prefix (like "MPF" in MPF102, which originally would denote a Motorola FET) now is an unreliable indicator of who made the device. Some proprietary naming schemes adopt parts of other naming schemes, for example a PN2222A is a (possibly Fairchild Semiconductor) 2N2222A in a plastic case (but a PN108 is a plastic version of a BC108, not a 2N108, while the PN100 is unrelated to other xx100 devices). | What is a plastic version of a BC108? | {
"text": [
"PN108"
],
"answer_start": [
439
]
} |
572faff7b2c2fd1400568351 | Transistor | The junction forward voltage is the voltage applied to the emitter–base junction of a BJT in order to make the base conduct a specified current. The current increases exponentially as the junction forward voltage is increased. The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor diodes). The lower the junction forward voltage the better, as this means that less power is required to "drive" the transistor. The junction forward voltage for a given current decreases with increase in temperature. For a typical silicon junction the change is −2.1 mV/°C. In some circuits special compensating elements (sensistors) must be used to compensate for such changes. | What is the junction forward voltage? | {
"text": [
"the voltage applied to the emitter–base junction of a BJT"
],
"answer_start": [
32
]
} |
572faff7b2c2fd1400568352 | Transistor | The junction forward voltage is the voltage applied to the emitter–base junction of a BJT in order to make the base conduct a specified current. The current increases exponentially as the junction forward voltage is increased. The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor diodes). The lower the junction forward voltage the better, as this means that less power is required to "drive" the transistor. The junction forward voltage for a given current decreases with increase in temperature. For a typical silicon junction the change is −2.1 mV/°C. In some circuits special compensating elements (sensistors) must be used to compensate for such changes. | What is the purpose of a junction forward voltage? | {
"text": [
"to make the base conduct a specified current"
],
"answer_start": [
99
]
} |
572faff7b2c2fd1400568353 | Transistor | The junction forward voltage is the voltage applied to the emitter–base junction of a BJT in order to make the base conduct a specified current. The current increases exponentially as the junction forward voltage is increased. The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor diodes). The lower the junction forward voltage the better, as this means that less power is required to "drive" the transistor. The junction forward voltage for a given current decreases with increase in temperature. For a typical silicon junction the change is −2.1 mV/°C. In some circuits special compensating elements (sensistors) must be used to compensate for such changes. | What is the ideal junction forward voltage? | {
"text": [
"lower"
],
"answer_start": [
344
]
} |
572faff7b2c2fd1400568354 | Transistor | The junction forward voltage is the voltage applied to the emitter–base junction of a BJT in order to make the base conduct a specified current. The current increases exponentially as the junction forward voltage is increased. The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor diodes). The lower the junction forward voltage the better, as this means that less power is required to "drive" the transistor. The junction forward voltage for a given current decreases with increase in temperature. For a typical silicon junction the change is −2.1 mV/°C. In some circuits special compensating elements (sensistors) must be used to compensate for such changes. | Why is the ideal junction forward voltage lower? | {
"text": [
"less power is required to \"drive\" the transistor"
],
"answer_start": [
410
]
} |
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