context_global stringclasses 1
value | question stringclasses 5
values | answer stringclasses 4
values |
|---|---|---|
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
21
I QS22
8
AS /B Dat as heet
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A ll right s res erv ed
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IQ S228A
S
/B D AT ASHEET
Single channel capacit ive pr oxim it y
and t ouch cont r oller
The Pr oxSense
®
IQ S228A S/ B
is a single channel self
-
capacit ive sensor wit h Dynam ic Calibrat ion
Feature s
>
1 Self capacit ive channel
>
>
Pr oxim it y and Touch output s
>
Autom at ic Tuning
>
I nter nal Refer ence Capacit or
>
M inim um exter nal com ponent s
>
1
-
Wire dat a str eam ing
>
I
2
C Debug opt ion
>
User selectable opt ions (O TP):
>
Ext sync cont r olor Ext f ilt er contr ol
>
I /O Sink or Sour ce selection
>
Tim e
-
out f or st uck key
>
Pr oxim it y and Touc
h sensit ivit y selections
>
Low Power
m odes
>
Low powerm ode 2. 5
A
>
Supply volt age: 1.8V t o 3. 6V
Applicati ons
>
Pr oxim it y sensors
>
SAR det ectionf or Tablets
>
On
-
ear det ection f or m obile phones
>
3D glasses
>
Personal M edia Player s
>
Whit e goods and appliances
>
HumanI nter f ace Devices
>
Pr oxim it y activat ed backlight ing
Ava il a ble O ptions
T
A
T SO T 23
-
6
WL CS P
-
8
DF N
-
6
-
20
°
C t o 85
°
C
I Q S228AS
-
-
-
40
°
C t o 85
°
C
I Q S228B
I Q S228B
I Q S228B
R oH S2
Com pl i ant
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
21
I QS22
8
AS /B Dat as heet
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Contents
I QS 22 8AS /B DA TAS HE E T
................................
................................
................................
................................
.....................
1
1 OVE RV IE W
................................
................................
................................
................................
................................
........
5
1.1
D
E V I CE
................................
................................
................................
................................
......................
5
1.2
O
P E RATI ON
................................
................................
................................
................................
................
5
1.3
A
P P LI CA BI LITY
................................
................................
................................
................................
............
5
2 PACKA GIN G A ND P IN
-
OU T
................................
................................
................................
................................
...............
6
2.1
IQ S2 28 AS/ B
................................
................................
................................
................................
.............
6
2.1.1 P in
-
ou t TSOT 2 3
-
6
................................
................................
................................
.............................
6
2.1.2 P in
-
ou
t W LC SP
-
8
................................
................................
................................
..............................
7
2.1.3 P in
-
ou t DFN
-
6
................................
................................
................................
................................
....
8
2.2
S
CHE MA TI C
................................
................................
................................
................................
................
9
2.2.1 TSO T 23
-
6
................................
................................
................................
................................
..........
9
2.2.2 W LCS P
-
8
................................
................................
................................
................................
.........
10
2.2.3 DF N
-
6
................................
................................
................................
................................
..............
11
3 U S E R CON FI GURA BLE OPT IONS
................................
................................
................................
................................
.....
12
3.1
C
ONFI GURI NG
D
EV I CE S
................................
................................
................................
............................
12
3.1.1 IQ S2 28 AS/ B Us er
Se lec tab le O pti ons
................................
................................
............................
12
4 ME A S URIN G CAPA CI TAN CE US IN G T HE
C HA RGE T RANS FER
ME TH O D
................................
................................
..........
15
................................
................................
................................
................................
......................
16
6 OPE RA TIN G PR INC IPLE
................................
................................
................................
................................
...................
17
7 CO NFI GURA BLE S E TTIN GS
................................
................................
................................
................................
..............
17
7.1
CT RL:
E
XTE RNA L
C
ONTROL
................................
................................
................................
.....................
17
7.1.1 Char g e H alt
................................
................................
................................
................................
......
17
7.1.2 Ha lt LT A Fi lter
................................
................................
................................
................................
..
17
7.1.3 Pu ls e
o n CTR L:
................................
................................
................................
...............................
17
7.2
LO G IC
................................
................................
................................
................................
....................
18
7.3
RF
N
OI S E ON
IQ S228AS /B
................................
................................
................................
......................
18
7.3.1 ND: RF Nois e Det ec ti on
................................
................................
................................
..................
18
7.3.2
IQ S2 28 AS/ B RF Nois e Im mun ity
................................
................................
................................
.....
18
7.4
P
ROXI MI TY
T
HRE S HOLD
................................
................................
................................
............................
19
7.5
T
OUCH
T
HRE S HOLD
................................
................................
................................
................................
.
19
7.6
M
ULTI P LI E RS
................................
................................
................................
................................
............
19
7.7
C
HA RGE
T
RA NS FE R
................................
................................
................................
................................
.
19
7.8
T
A RGET
C
OUNTS
................................
................................
................................
................................
.....
19
7.9
E
NA B LE
P
A RTIA L
AT I
................................
................................
................................
................................
19
7.10
DY CA L
T URBO
................................
................................
................................
................................
....
20
7.11
F
I LTE R
H
A LT
................................
................................
................................
................................
..........
20
7.12
L
OW
P
OWE R
M
ODE S
................................
................................
................................
..............................
20
7.13
Z
OOM
................................
................................
................................
................................
....................
20
8 S T RE A MIN G M ODE
................................
................................
................................
................................
.........................
21
8.1
E
V E NT
M
ODE
................................
................................
................................
................................
...........
22
8.2
I
2
C
................................
................................
................................
................................
..........................
22
9 A U TO TU NING IM PLE ME NTAT I
O N (A TI)
................................
................................
................................
.........................
23
9.1
F
ULL
AT I
................................
................................
................................
................................
.................
23
9.2
AT I
T
A RGET
................................
................................
................................
................................
.............
23
9.3
AT I
BAS E
:
S
I GNI FI CA NCE OF
AT I
B
A SE
................................
................................
................................
........
23
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
21
I QS22
8
AS /B Dat as heet
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Marc h 2022
9.4
S
E NS I TIV I TY
D
UE TO
AT I
................................
................................
................................
..........................
23
9.5
AT I
P
ROCE DURE
................................
................................
................................
................................
......
23
1 0 DY CA L S PE C IFI C S E TTI NGS
................................
................................
................................
................................
............
25
10.1
R
E LE A SE
T
HRES HOLD
................................
................................
................................
............................
25
10.2
I
NP UT
E
NA B LE
................................
................................
................................
................................
........
25
1 1 E LE CTR ICA L S PE CIF I CA TI ONS
................................
................................
................................
................................
........
26
11.1
A
B S OLUTE
M
A XIMUM
S
PE CI FI CA TI ONS
................................
................................
................................
....
26
11.2
G
E NE RA L
C
HA RA CTE RI STI CS
................................
................................
................................
..................
26
11.3
O
UTP UT
C
HA RA CTE RIS TI CS
................................
................................
................................
....................
27
11.4
P
A CK A GI NG
I
NFORMA TION
................................
................................
................................
......................
28
11.4. 1 TSO T 2 3
-
6
................................
................................
................................
................................
......
28
11.4. 2 WLC SP
-
8
................................
................................
................................
................................
.......
29
11.4. 3 DFN
-
6
................................
................................
................................
................................
............
30
11.4. 4 M SL Lev e l
................................
................................
................................
................................
......
31
1 2 DATAS HE E T A ND PART
-
NU M BE R INF OR MATI ON
................................
................................
................................
.........
32
12.1
O
RDE RI NG
I
NFORMATI ON
................................
................................
................................
........................
32
12.2
D
EV
I CE
M
A RK I NG
T
OP
................................
................................
................................
.........................
33
12.2. 1 TSO T 2 3
-
6 Pac k age Mar k ings
................................
................................
................................
.......
33
12.2. 2 WLC SP
-
8 Pac k ag e Mar k ings
................................
................................
................................
........
34
12
.2. 3 DFN
-
6 Pac k ag e M ark ings
................................
................................
................................
.............
34
12.3
T
A P E A ND
R
EE L
S
PE CI FICA TI ON
................................
................................
................................
..............
35
A P PE ND IX A . ME M OR Y MAP
................................
................................
................................
................................
.............
36
A P PE ND IX B . E RRA TA
................................
................................
................................
................................
........................
40
F
I LTE R
H
A LT
T
I
MES
................................
................................
................................
................................
........
40
A P PE ND IX C . C ONTA CT I NF ORMA TI ON
................................
................................
................................
.............................
41
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
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I QS22
8
AS /B Dat as heet
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List of Ab brevi ation s
ATI
Autom at ic TuningI m plem ent at ion
BP
Boost Power M ode
CS
Counts( Number of Charge Transf ers)
C
s
I nter nal Refer ence
Capacit or
DYCAL
TM
Dynam ic Calibrat ion
EM I
Electr omagnet icI nter f erence
ESD
Electr o
-
St atic Dischar ge
FTB/ EFT
( Electr ical) Fast Transient Burst s
G ND
G r ound
HC
Halt Char ge
LP
Low PowerM ode
LTA
Long Term Aver age
ND
Noise Det ect
THR
Thr eshold
TM
Touch M ode
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
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AS /B Dat as heet
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1
Overvi ew
1 .1
Dev ice
The
I Q S228AS/ B
is a single channel
capacit ive proxim it y and t ouch device which
employs an inter nal volt age r egulator and
r efer ence capacit or ( C
s
).
The IQ S228AS/ B device has a dedicat ed
pin(s)
f or t he connect ion of a sense
electr ode(s) ( Cx) and out put pin(s) f or
proxim it y and t ouch event s on O UT. The
polarityoft heoutput pinscanbeconf igur ed. A
1
-
wir e open drain dat a str eam ing pr otocol O R
I
2
C inter f ace is im plement ed f or debugging
pur poses.
Special device conf igur at ion can be done by
sett ingonet im epr ogr amm able(O TP)opt ions.
The device aut om atically t r acks slow varying
envir onm ent al changes via var ious signal
processing algor it hm s and has an Autom atic
Tuning Im plement ation ( ATI ) algor it h
m t o
calibrat et he device t o t he sense elect r ode.
f orm of hyst er esis t hat can t r ack slow var ying
envir onm ent al change even while t he sensor
is in a t ouch st at e. This is ideal f or port able
applications.
The
char ge
t r ansf er
method of capacit ive
sensingisemployedontheIQ S228AS/ B.( The
char ge t r ansf er pr inciple is t hor oughly
descr ibed in t he applicat ion not e:
-
1 .2
Ope ra tion
The device has been designed t o be used in
applications wher e proxim it y is r equir ed and
t ouch condit ions can prevail f or an extended
per iod of t im e which m ay r esult in
uncompensat ed dr if t in convent ional
capacit ive sensor s.
Alowt hresholdisusedtodet e
ct t hepr oxim it y
of an obj ect, wit h a higher t hreshold f or t ouch
det ection.
Dynam ic Calibrat ion is perf orm ed when a
TOUCH condit ion is detected f or longer t han
t
DY CA L
. Thehyst er esisalgor it hmwillnowcheck
f ort her eleasecondit ionoft het ouch,whiles
t ill
t r acking envir onm ent al changes
1 .3
Applic a bili ty
All
specif ications, except wher e specif ically
m ent ioned ot her wise, provided by t his
dat asheet
are applicable t o t he f ollowing
r anges:
>
Tem per at ure:
I Q S228AS:
-
20
°
Ct o+85
°
C
I Q S228B:
-
40°Ct o+85°C
>
Supply volt age( V
DDHI
) : 1.8V t o 3. 6V
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
21
I QS22
8
AS /B Dat as heet
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A ll right s res erv ed
Rev is ion 1.
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2
Packag ing
an d Pin
-
Out
TheIQ S228AS/ BisavailableinaTSO T23
-
6package.
t heIQ S228BisavailableinTSO T23
-
6
, DFN
-
6
or WLCSP
-
8
package
2 .1
IQ S 2 28 AS/ B
2 .1 .1
P in
-
out
T S OT2 3
-
6
Fi g u re
2
.
1
:
Pi n
-
ou t o f I QS2 2 8 AS/B i n t he T SOT23
-
6 pa ck a g e.
Ta b l e
2
.
1
:
Pi n
-
ou t de sc ri p ti o n
IQ S22 8AS /B in T SO T 23
-
6
Pi n
Nam e
Ty p e
Fu n c ti o n
1
OUT
Dig i tal Out
Ou tp u t
2
GND
Gro u n d
GND Re fe re n c e
3
CTRL / ND
Dig i tal I n pu t/ Ou tpu t
Con tro l i n pu t o rp ro xi mi ty o u tpu t / ND p in
4
VREG
An a l o gu e Outp u t
In te rn al Re gu l a to r Pin (Co n nec t 1
µ
Fb y pa ss ca p ac i to r)
5
VDDHI
Su p p ly I np u t
Su p p ly Vo lta g e I n pu t
6
CX
An a l o gu e
Se n s e El ec tro de
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
21
I QS22
8
AS /B Dat as heet
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2 .1 .2
P in
-
out WLCS P
-
8
Ta b l e
2
.
2
8
-
pi n W L CSP Pi n
-
ou t Desc ri pti o n
IQ S2
2 8B
8
-
p in WL C SP
Pin
Nam e
Ty pe
Fu nc tio n
1
Cx
Se n s e e l ec trod e
Con n e ct to c o nd uc tiv e a re a in te n d e d f o r
s e ns o r
2
OUT
Dig i tal Out
Ou tp u t
3
VREG
Reg u l a to r ou tp u t
Req u i res ex te rn a l c a pa c ito r
4
VSS
Si g n a l GND
5
INPUT
Dig i tal I n pu t
Fl o a ti n g i n pu t d u ri n g ru n ti m e.
Rec o mm en d e d: Con ne c tto
POUT
6
POUT
/ ND
Dig i tal I n pu t/ Ou tpu t
Con tro l i n pu t o r
p ro xi mi ty o u tpu t / ND p in
7
VDDHI
Su p p ly I np u t
Su p p ly Vo lta g e I n pu t
8
PGM
Con fi g u ra tio n pi n
Con n e cti on f o r OTPp ro g ramm i n g. Flo a tin g in p u t d u ri n g
ru n tim e .
Rec o mm en d e d: Con ne c tto
OUT
p i n . Pro g ram mi n g c a n
s ti ll b e p e rfo rm ed us i ng t hi s pin , p rov i de d a d i od e is
u s e d. (Se e AZD0 2 6
Con fi g ura ti o n T o ol s Ove rvi e w)
IQ S228
1
2
3
4
8
7
6
5
Fi g u re
2
.
2
IQS2 2 8 B8
-
p i n W LCSP
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
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AS /B Dat as heet
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2 .1 .3
P in
-
out
DFN
-
6
Fi g u re
2
.
3
: Pi n
-
o u t of IQS2 2
8B
i n DFN
-
6 p a ck a ge .
Ta b l e
2
.
3
:Pi n
-
ou t de sc ri p ti o n .
IQ S22 8
B
6
-
p in DF N
Pin
Name
T ype
F u n ctio n
1
OUT
Dig i tal Out
Ou tp u t
2
GND
Gro u n d
GND Re fe re n c e
3
CTRL / ND
Dig i tal I n pu t/ Ou tpu t
Con tro l i n pu t o r
p ro xi mi ty o u tpu t / ND p in
4
VREG
An a l o gu e Outp u t
In te rn al Re gu l a to r Pin (Co n nec t 1
µ
Fb y pa ss
c a p ac i to r)
5
VDDHI
Su p p ly I np u t
Su p p ly Vo lta g e I n pu t
6
CX
An a l o gu e
Se n s e El ec tro de
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
21
I QS22
8
AS /B Dat as heet
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2 .2
S c he ma tic
2 .2 .1
T S OT2 3
-
6
Fi g u re
2
.
4
:
Typ i ca l ap p li ca ti on re fe re nc e s ch e ma tic o fIQS2 28 AS/B. C2 &C3 are op ti on a l for a d d ed RF i mmu n i ty .
Fi g u re
2
.
5
:
IQS2 2 8 AS/Bo u tp ut p i n c o nfi gu ra tio n
fo r I 2 C de bu g o pe ra tio n ,o r d riv in g L EDs (a c tiv e h i g h o r lo w o p ti o n
a v a il a bl e ).
Where a syst em level ESD st r ike is f ound t o cause t he I C t o go int o ESD induced latch
-
up, it is
suggest edt hatt hesupplycurr ent t ot heI Q S228ICislim it edbym eansof ase
r iesr esist or t hat could
lim it t he m axim um supply curr ent t ot heI C t o <80m A.
Ref e r t o AZD0 0 8 fo r
to u ch k ey de si g n
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
21
I QS22
8
AS /B Dat as heet
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2 .2 .2
WLCS P
-
8
Fi g u re
2
.
6
Ty pi ca l ap p li c ati o n re fe re nc e s ch e ma tic o fIQS2 2 8B
WL CSP
-
8 Pac k ag e
. C2 &C3 a re o pti on a l fo r ad d e d RF
i mmu n i ty .
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
21
I QS22
8
AS /B Dat as heet
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2 .2 .3
DFN
-
6
Fi g u re
2
.
7
Ty pi ca l ap p li c ati o n re fe re nc e s ch e ma tic o fIQS2 2 8B
DFN
-
6 Pa ck a ge
. C2 &C3a re o p ti o n al f o ra d de d RF
i mmu n i ty .
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
21
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AS /B Dat as heet
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3
User Co nfigur able Options
This section list
s t he user conf igur able
sett ings.
The
deviceisf ullyf unct ionalinit sdef aultst at e,
but som e applications may r equir e alt ernat ive
conf igur ation sett ings. These sett ings are
enabled by conf igur ing O ne Tim e
Pr ogr amm able( O TP) user opt ions.
Conf igur ation c
an be done on packaged
devices or in
-
cir cuit. I n
-
cir cuit conf igur at ion
m ay be lim it ed by values of ext ernal
components chosen.
Popular conf igur at ions ar e available ex
-
st ock
please check wit h t he local dist r ibutor f or
availabil it y. Azoteq can supply pre
-
c
onf igur ed
devices f or large quant it ies.
3 .1
Configuri ng Dev ic es
Azoteqof f er saConf igurationTool( CT210/ 20)
and accom panying software ( USBPr og. exe)
t hat can be used t o progr am t he O TP user
opt ions f or pr otot yping purposes. M or e det ails
r egarding t he conf igur at ion of t he device wit h
t he USBPr og progr am is explained by
application not e:
AZD007
USBPr og
O verview
which can be f ound on t he Azot eq
websit e.
Alt ernat ive pr ogr am m ing solutions f or t he
I Q S228AS/ B also exist . For f ur t her enquir ies
r egarding t his, please cont act Azot eq at
Pr oxSenseSuppor t @azot eq. com or t he loc
al
dist r ibut or
3 .1 .1
IQ S 2 28 AS/ B Use r Se le c table O ptions
Ta b l e
3
.
1
:
IQS2 2 8 AS/B Ba nk 0 Us e r Se l ec ta bl e Opti o ns (0xC4H)
Bi t
7
6
5
4
3
2
1
0
Name
I N_EN
REL
T HR
LOGI C
T
T HR 2
T
T HR 1
T
T HR 0
P
T HR 1
P
T HR 0
bi t 7
I N_E N:
I nput E nable
S ect ion
10. 2
0 = Out put (P rox imi ty )
1 = I nput
bi t 6
RE L
T HR
:
Releas e Thres hold
S ect ion
10. 1
0 = 75%
1 = 87%
bi t 5
LOGIC:
Out put logics elect (Only when S TREA MI NGmode is
dis abled)
S ect ion
7. 2
0 = S of t ware Open Drain Act iv e Low
1 = Act iv e High
bi t 4
-
2
T
T HR
:
Touc h Thres holdS elect ions
S ect ion
7. 5
000 = 72/ 256
001 = 4/ 256
010 = 8/ 256
011 = 24/ 256
100 = 48/ 256
101 = 96/ 256
110 = 128/ 256
111 = 160/ 256
bi t 1
-
0
P
T HR
:
P rox imi ty Thres hold S elec t ions
S ect ion
7. 4
00 = 4
01 = 2
10 = 8
11 = 16
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Ta b l e
3
.
2
:
Us e r Se l ec ta bl e Con fi g u ra ti on Opt io n s: Ba nk 1
Fu l l ATI (0x C5H)
t
HA LT 1
t
HA LT 0
~
~
TURBO
BASE
2
BASE
1
BASE
0
bit 7
bit 0
Bank1: bi t 7
-
6
t
HAL T
:
Halt tim es
S ect ion
7. 11
00 = 20s ec onds
01 = 40s ec onds
10 = Nev er
11 = 3s ec onds
Bank1: bi t 5
-
4
Not used
Bank1: bi t 3
T URBO:
DY CA LTURB O
S ect ion
7. 10
0 = Dis abled
1 = E nabled
Bank1: bi t 2
-
0
BAS E :
B as e V alue
S ect ion
9. 3
000 = 200
001 = 50
010 = 75
011 = 100
100 = 150
101 = 250
110 = 300
111 = 500
Ta b l e
3
.
3
:
Us e r Se l ec ta bl e Con fi g u ra ti on Opt io n s: Ba nk 1
Pa rti a l AT I
t
HA LT 1
t
HA LT 0
M ULT
S E NS E 1
M ULT
S E NS E 0
M ULT
COMP 3
M ULT
COMP 2
M ULT
COMP 1
M ULT
COMP 0
bit 7
bit 0
Bank1:7
-
6
t
HAL T
:
Halt tim es
S ect ion
7. 11
00 = 20s ec onds
01 = 40s ec onds
10 = Nev er
11 = 3s ec onds
Bank1: bi t 5
-
4
MULT
: Mult iplier f orS ens it iv ity
S ect ion
7. 6
00
01
10
11
Bank1: bi t 3
-
0
MULT: Mult iplierf or Compens at ion
S ect ion
7. 6
0000 t o 1111
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Ta b l e
3
.
4
:
Us e r Se l ec ta bl e Con fi g u ra ti on Opt io n s: Ba nk 2 (0x C6H)
STREAM
TRANS
CO MM S
ND
Tar get
ATI
LP
1
LP
0
bit 7
bit 0
Bank2: bi t 7
ST RE AM:
St eami ng Met hod
S ect ion
8. 2
0 = 1
-
wire
1 = 2
-
wire (I
2
C)
Bank2: bi t 6
T RANS :
Charge Trans f er Frequenc y
S ect ion
7. 7
0 = 512k Hz
1 = 250k Hz
Bank2: bi t 5
COMM S :
St reami ng
S ect ion
8
0 = Dis abled
1 = E nabled
Bank2: bi t 4
ND:
Nois e Det ec t
S ect ion
7. 3
0 = Dis abled
1 = E nabled (1
-
wire c omms only )
Bank2: bi t 3
T arget:
A TI t arget c ounts
S ect ion
7. 8
0 = 1200
1 = 1024
Bank2: bi t 2
ATI
: A TI S elec t ion
S ect ion
7. 9
0 = Full
1 = P art ial
Bank2: bi t 1
-
0
LP
: P owermode S elect ion
S ect ion
7. 12
00 = BP , 9ms (64ms if z oom is disabled)
01 = NP, 128ms
10 = LP 1, 256ms
11 = LP 2, 512ms
Ta b l e
3
.
5
:
Us e r Se l ec ta bl e
Con fi g u ra ti on Opt io n s: Ba nk 3 (0x C7H)
~
~
~
~
Zoom
~
~
CTRL
bit 7
bit 0
Bank3: bi t 7
-
4
S ystem Use
Bank3: bi t 3
Zoom :
Zoom Dis able
S ect ion
7. 13
0 = ZoomE nabled
1 = Zoom Dis abled
Bank3: bi t 2
-
1
S ystem Use
Bank3: bi t 0
CT RL:
Cont rolI nput
S ect ion
7. 1
0 = Halt Charge
1 = Filt er Halt
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Measuri ng
C
a pacit ance
U
sing th e
Cha rge Tran sfer
M
etho d
The
char ge
t r ansf er
m ethod of capacit ive
sensing is em ployed onthe IQ S228AS/ B.
A char ge cycle is used to t ake a m easur em ent
of t he capacit ance of t he sense elect r ode
( connect ed t o Cx) r elative t o ground. It consist s
of a ser ies of pulses char ging Cx and
dischar ging
Cxt ot her eferencecapacit or , at t he
char get r ansf erf r equency( F
CX
-
r ef ert oSection
11
) . Thenum ber of t hepulsesr equir edt or each
a t r ip volt a
ge on t he refer ence capacit or is
r efer r edt oast he
Count
value( CS) whichist he
instant aneous capacit ive m easur ement . The
Counts ( CS) ar e used to det er m ine if eit her a
physical cont act or proxim it y event occurr ed,
based on t he change in CS det ect ed. The
t ypical values of CS, wit hout a t ouch or
proxim it y condit ion r ange bet ween 1344 and
1865 counts, although higher and lower counts
can be used based on t he application
r equir ement s. With CS larger t han +/
-
1865 t he
gain of t he syst em may become t oo high
caus
ing unst eady oper ation.
The I Q S228AS/ B schedules a char ge cycle
ever y t
SA MP LE
seconds t o ensure r egular
samples f or pr ocessing of r esult s. The dur at ion
of t he char ge cycle is def ined as t
CH A RGE
and
variesaccordingt ot hecountsr equir edt or each
t he tr ip
volt age. Following t he char ge cycle
other activit ies such as dat a st r eam ing is
completed ( if in str eam ing m ode) , bef ore t he
next char gecycle is init iat ed.
Pl easenot e: A tt achingaprobet ot heCxpi n
w il l i ncrease t he capacit ance of t he sense
plat e and t h
eref ore C
S
. T his may have an
i mmediat e i nf l uence on t he Counts val ue
( decrease t
CH AR GE
) and cause a proximit y or
t ouchevent .
Af t er t
HA LT
secondst hesyst em will
adj ust t o accomm odate f or t his change. I f t he
t otal load on Cx, wit h t he probe at t ached is st ill
lowert hant hem aximumCxloadt hesyst emwill
cont inuet of unct ionnor mallyaft ert
HA LT
seconds
wit h t he probe att ached.
Fi g u re
4
.
1
:
Cha rge cy cl e s a s ca n b e s ee n on CX.
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Fi g u re
5
.
1
:
DYCAL Ope ra ti o n (Se l f Capa c iti ve Se ns in g )
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6
Operatin g Prin ciple
Figur e 5.1 is a visual r epr esent ation of t he
DYCAL f unct ionalit y. The O UT pin is used t o
indicate t he st atus of a DYCAL event ( bot h
proxim it y a
nd a t ouch event) . The DYCAL
f unct ionalit y is sum m ar ised below.
Non
-
T ouch M ode
The O UT pin is act ivated on t he successf ul
det ection of a pr oxim ity event and will r emain
activat edf ort hedur ationoft heproxim it yevent ,
per m itt ing t hat t his event is no lo
nger t han t he
f ilt er halt t im ings. The LTA will be halt ed in t his
t im e.
Assoonasat ouchcondit ionisdet ect ed( Count
values, orCS, f allbelowT
T HR
) , t hecont r ollerwill
dynamically r e
-
calibrat e it s LTA t o t he halted
LTA
T
T HR
. The I C is now in TouchM ode.
T ouch M ode
Af t er t he re
-
calibrat ion of t he LTA, it will f ollow
t he Count s ( CS) and be allowed t o t r ack slow
varying envir onm ent al changes. I f t he Counts
( CS) were t o exceed t he LTA by t he r elease
t hreshold ( REL_T
T HR
) t he tou
ch det ect ion will
st op and t he O UT pin will r etur n t o it s or iginal
st ate.
7
Configur able S ettin gs
This section descr ibes t he user conf igur able
opt ions oft heI Q S228AS/ B inm ore det ail.
User progr amm able options are selected by
conf igur ing t he O TP select ion
s. Please r ef er t o
Section
2.2. 2
f oranover viewoft heconf igur able
sett ings.
7 .1
CT RL: Ex ternal Control
T he user has t he opt ion t o cont rol some
parame
t ers of t he I Q S228AS/B f rom an
ext ernalsource. T heI Ccanbeusedindef au lt
mode (CTRL unc onn ect ed) or t he user ca n
use t he CT RL pin t o select whet her t he
mast er should halt t he charge t ransf ers (i.e.
st opoperat ion)ort ohal t LT A
f ilt ert rackingon
t he
I Q S228AS/B.
7 .1 .1
Cha rge Ha lt
I f CT RL is sampled high f or lon ger t han
T
EXT _H ALT,
t he charge co nversion cycle w ill be
halt ed, once t h e current conversion has be en
complet ed. T he devic e will rema in in t hi s
st andby mode unt il t he CT RL line is sampled
low
aga in. An aut omat ic reseed is perf ormed
direct lyaf t erCT RLisreleasedt ocompensat e
f or any enviro nment al changes w hich mi ght
have occurred d uring t h e st andby mode.
7 .1 .2
Hal t LT A
F
il te r
W hen conf igured in t his mode, CT RL can be
used t o cont rol t he LT A halt t i
mes when
sampledhig h. T heCT RLpinhasprecedence
over t he conf ig urat io ns bit s select ed f or t h e
halt t imings.
I f CTRL is sam pled high f or longer t han
T
E X T _HA LT
, t he f ilt er will be halt ed unt il t his pin is
sampled low.
.
Fi g u re
7
.
1
:
Ma s te r Out p u t s ig na l o n CTRL p in t o Ha l t Op era tio n o r Fi l te r Ha l t
7 .1 .3
P uls e on CT RL:
T he pulse on t he CT RL pin needs t o adher e
t o t he f ollowing t imin g const r
aint s:
25ms < T
PULSE
< 35ms
7.1. 3. 1
I Q S228A S/ B: Reseed
A reseed co ndit io n can be init iat e d by
generat i ngap ulseo nt heCT RLpin. T heLT A
will b e reset t o t he coun t , f orcing t he O UT pin
t o it s original st at e.
I f t he count value is out side it s allow abl e
limits, t he device will f orce an AT I event t o
reset t he syst em sensitivit y. (Please ref er t o
sect ion
8. 1
f or more det ail).
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7.1. 3. 2
I Q S228A S/ B: re
-
AT I
Ar e
-
ATIcondit ioncanbeinit iatedbygener at ing
a pulse on t he CTRL pin. This f unct ion can be
issued at anyt im e.
Fi g u re
7
.
2
:
Ma s te r Out p u t s ig na l o n CTRL t o fo rce a Res e ed Con d i ti o n
.
7 .2
LOG IC
Thelogicusedbyt hedevicecanbeselectedas
active HIG H or act ive LOW. The out put pins
O UT and CTRL will f unct ion based on t his
selec
t ion. When conf igured as Act ive High, t he
out put swillr emainhighaft er PO Runt ilATIhas
completed. The ATI t im e will vary accor ding t o
t he capacit ive load on t he sensor, but t ypically
does not exceed 500ms.
Co n f igu ratio n :
Bank0
b it 5 : Lo g icO u t p u t
Sele ctio n
Bi t
Select i on
0
Soft ware O pen Dr ain Active Low
1
Act ive High
Asoft war eopendrainout put isim plement edf or
t he O UT pin when configured in active low
m ode. The volt age on t he pull
-
up r esist or is
lim it ed t o t he
I Q S228AS/ B supply volt age. A
4k7
-
is
r ecomm ended.
7 .3
RF Nois e on I QS 2 28 AS/ B
7 .3 .1
ND: RF Nois e De tec tion
The IQ S228AS/ B has RF Noise Detect ( ND)
f unct ionalit y. I f ND f unct ion is enabled, t he
I Q S228AS/ B is able t o detect RF Noise
on t he
TOUT/ ND pin. Furt her details on t he wor king of
t his can be f ound in the Application Not es:
AZD015 and AZD015b.
Note: ND input enable is a legacy input and is
not r ecomm ended f or use in new designs. The
input has been desensitized by def ault and
is
not t estedt otr iggerataspecif icRFinputpower
level
7 .3 .2
IQ S 2 28 AS/ B RF Noise I mmunity
TheI Q S228AS/ Bhasadvancedim m unit yt oRF
noisesour cessuchasGSM cellulart elephones,
DECT, Bluet oot h and WI FI devices. Design
guidelines should however be f ollowe
d t o
ensure t he best noise im m unity. The design of
capacit ivesensingapplicationscanencom pass
alarger angeof sit uat ionsbut asasum m ar yt he
f ollowing should be not ed t o im prove a design:
>
Aground pla nesh oul db eplac edu ndert h e
I C, except under t he
Cx line.
>
All t he t racks on t he PCB must be kept as
short as possible.
>
T he capacit or bet we en VDDHI and G ND
as well as bet ween VR EG and G ND, must
be place d as close as p ossible t o t he I C.
>
A 100 pF capacit or should be place d in
parall el wit h t he 1uF capacit o
r bet wee n
VDDHI andVSS.Anot her100pF capacit or
can be p laced in par allel wit h t he 1 uF
capacit or bet we en VRE G and G ND.
>
I f t he device is t oo sensit ive f or a specif ic
orderopt ion,
aparas it iccapacit or(
t ypicall y
20pF ) can be added b et ween t he Cx line
and
grou nd.
>
Proper sense elect rod e and but t on desig n
princip les must be f ollo wed.
>
Unint ent i onal co upl ing of sense elect rod e
t o ground an d ot her circuit ry must be
limited by increasin g t he dist ance t o t hese
sources.
I n som e inst ances a ground plane som e
dist an
ce fr om t he device and sense electr ode
m ay provide signif icant shielding f r om
undesir ed inter f er ence.
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When t he capacit ance bet ween t he sense
electr ode and ground becom es t oo lar ge the
sensit ivit y of t he devicem ay be influenced.
7 .4
P rox imi ty
T hre s hold
T he
I Q S228AS/ B
has 4 proximity t hreshol d
set t ings indicat e d in c ount s. T he proximity
t hresholdisselect edbyt hedesignert oobt ain
t he desired sensit ivit y and noise immunit y. A
proximityevent ist rigge redif t heCount s(CS)
diverges more t han
t h e select ed t hreshol d
f rom t he LT Af or 6 consecut ive cycles.
Conf i gurat i on:
Bank0
bi t 1
-
0
P
T HR 1
:P
T HR 0
: Proximi t yThresholds
Bi t
Select i on
00
4
01
2
( M ost sensit ive)
10
8
11
16
( Least sensit ive)
7 .5
T ouchT hre s hold
T he
I Q S228AS/B has 8 t ouch t hreshol d
set t ings indicat ed i n count s. T he t ouch
t hresholdisselect edbyt hedesignert oobt ain
t he desired t ouch se nsit ivit y. A t ouch event is
t riggered if t he Count s (CS) diverges more
t han t he select ed t hres hold f rom t he LT A f or
2 consecut ive cycles
.
I nt heNO
-
T O UCHst at et heCount s(CS)must
diverge mor e t han t he t ouch t hresho ld val ue
below
t he LT A. O perat ing in t he T O UCH
ST AT E, t he CS must diverge more t han
REL_T
T HR
of t he t ouch threshol d valu e
abov e
t he LT A
.
The f ollowing equ
ation is used t o det erm ine if a
t ouch or r elease event occurr ed.
NO TO UCH STATE:
LTA
CS<=
T
T HR
TOUCH STATE:
CS
-
LTA
>=
REL_T
T HR
Conf i gurat i on:
Bank0
bi t 4
-
2T
T HR 2
:T
T HR 0
T ouchT hreshol ds
T
T HR 2
:T
T HR 0
:
Touch Thr esholds
Bi t
Select i on
000
72/ 256
001
4/256( M ost sensit ive)
010
8/256
011
24/ 256
100
48/ 256
101
96/ 256
110
128/256
111
160/256( Least sensit ive)
7 .6
Multipli e rs
Whenusingpar t ialATI,thebasevalueissetup
using t he m ult ipliers. Com pensat ion will st ill be
add
ed aut om aticallyt oreach t he t ar get.
7 .7
Cha rge T ra ns fer
The char ge t r ansf er f r equency of t he
I Q S228AS/ B is adj ustable. Changing t he
t r ansf er f r equency will aff ect sensit ivity and
r esponser ate. Two opt ions ar e available:
Conf i gurat i on:
Bank2
bi t 6
T RA NS:
Char ge Tr ansf er Frequency
Bi t
Select i on
0
512kHz
1
250kHz
7 .8
T a rge t Counts
The t arget oft he ATI algorithm can be adj ust ed
bet ween1200( def ault )and1024count s. When
less sensit ivit y is r equir ed, t he lower counts wil
l
also incr easer esponse rate:
Conf i gurat i on
:
Bank2
bi t 3
T arget :
ATI t ar get counts
Bi t
Select i on
0
1200
1
1024
7 .9
E na ble P a rtial ATI
I n some applications t he st art up t im e of t he
I Q S228AS/ B m ay be r equir ed t o be decr eased.
This is
possible by enabling par t ial ATI, if the
m ult ipliers r equir ed can be det erm ined, and t he
compensat ion alone is adequate t o account f or
envir onm ent al change.
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Conf i gurat i on:
Bank2
bi t 2
AT I:
Par t ial ATI
Bi t
Select i on
0
Disabled
1
Enab
led
7 .1 0
DYCAL T URBO
I n som e applications, it m ay be r equir ed t o
im provet heent ryandexit speedofTouchM ode
by r em oving t he ent ry r eseed delay, as well as
t urning of f t he AC
-
f ilt er s. This can be done by
enabling t he DYCAL TURBO m ode.
Conf i gurat i on:
Bank1
bi t 3
T URBO:
DYCAL TURBO
Bi t
Select i on
0
Disabled
1
Enabled
Notet hatifDycalTur boisenabled,t heLTAwill
halt at t he r eseed point for t
HA LT
if Touch M ode
isent er edbef or eapr oxim it yevent isr egist ered.
7 .1 1
Filte r Ha lt
The
LTA
f ilt
er only executes while no proxim it y
events ar e det ect ed to ensure com pensat ion
only f or envir onm ent al changes. O nce a t ouch
eventisdet ect edt hef ilt erwillr esumeoper ation
and will no longer be halt ed. The halt t im ing
conf igur ation sett ings determ ine ho
w long t he
f ilt er is halt ed.
Conf i gurat i on:
Bank1
bi t 7
-
6
Bi t
Select i on
00
20 seconds
01
40 seconds
10
Never
11
3 seconds
T he presenc e of a pro ximity condit ion f or a
t ime exceeding t he halt t ime will be deemed
as a f ault st at e which w ould t rigg er a resee d
event whereaf t ert heou t put st at eont heO UT
pin wil l be reset t o it s original co ndit io n.
7. 12
Low P owe r Modes
There exist 4
LP m odes. The LP m odes will
decr ease t he sam pling fr equency of CS which
will r educe t he
power consumpt ion
of t he
device. However , t his will also increase t he
r esponset im e of t he device.
Conf i gurat i on:
Bank2
bi t 1
-
0
Bi t
Select i on
00
9.1m s ( BP) 64m s if Zoom disabled
01
128ms( Norm al Power Mode)
10
256ms
( Low PowerM ode 1)
11
512ms( Low PowerM ode 2)
7 .1 3
Zoom
The I Q S228AS/ B has t he opt ion t o disable t he
zoom f unct ion. Thism eanst hat t hesam plet im e
will st ay f ixed, even when proxim ity and t ouch
events are m ade. When t his is activat ed, boost
power m ode
will change fr om a 9m s sample
t im e, t o 64m s.
Conf i gurat i on:
Bank3
bi t 3
Zoom:
Zoom Disable
Bi t
Select i on
0
Enabled
1
Disabled
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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8
Streami ng Mo de
F or a more complet e d escript ion of t he dat a
st reamingprot ocol, pl ea seref ert oApplicat
ion
Not e AZ D017 on t he Azot eq websit e.
T heIQ S228AS/Bhast hecapabilit yt ost ream
dat at oaMCU.T hisprovidest hedesignert he
abilit y t o obt ain t he p a ramet ers and sensor
dat a wit hin t he device in order t o aid design
int oappl icat ions. Dat as t reamingis
perf ormed
as a 1
-
wire dat a prot ocol on t he O UT pin O R
I
2
Cint erf ace.T heout put f unct ionof t hispinis
t heref orelost whent hedeviceisconf iguredi n
st reaming mode. Dat a Str eaming can be
enab led as ind icat ed be low:
Conf i gurat i on:
Bank2
bi t 5: Streami ngM ode
Bi t
Select i on
0
Disabled
1
Enabled
Figur e
8
.
1
illust rat es t he communicat io n
prot ocol f or init ialisin g and sending dat a wit h
t he 1 wire communicat i on prot ocol.
1.
Communicat i ons init i at e d by a ST ART
bit . Bit def ined as a lo w condit io n f or
T
S
T ART
.
2.
F ollowi ng t he ST ART bit , is a
synchronisat i on byt e (T
INI T
= 0xAA).
T hisbyt eisusedbyt heMCUf orclock
synchronisat i on.
3.
F ollowi ng T
I NIT
t he dat a byt es will be
sent . 8 Bytes will be sent af t er each
charge cycle.
4.
Each byt e sent wi ll be precede d by
a
ST ART bit and a ST OP bit will f oll ow
every byt e.
5.
ST O P bit indicat ed by t aking pi n 1
high. T he ST O P bit does not have a
def ined p eriod.
Fi g u re
8
.
1
:
D
e b ug : 1
-
wire strea mi n g De bu g Mo d e
.
Thef ollowingt abledef inest hebitdef init ionsf or
t he IQ S228AS/ B devices dur ing Str eam ing
M ode.
IQ Sw it ch
®
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®
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Ta b l e
8
.
1
:
By te De fin i tio n s f o rStre a mi n g Mo de
Byt e (B)
Bit
Value
0
AA
1
7 :0
CS Hig h by te
2
1 5 :8
CS L o w b y te
3
2 3 :1 6
L TA Hig h b y te
4
3 1 :2 4
L TA L o w by te
5 Sy s
Fl a gs
39
38
37
36
35
34
33
32
~
~
Ac ti ve Hi gh
Fi l te r Ha l t
L P a c ti v e
ATI Bu sy
Noi s e Fo u nd
In Z o om
6
47
46
45
44
43
42
41
40
To u ch
Pro x im i ty
M u l ti p li e rs
M u l ti p li e rs
M u l ti p li e rs
M u l ti p li e rs
M u l ti p li e rs
M u l ti p li e rs
7
5 5 :4 8
Com p e ns a ti o n
8
6 3 :5 6
Cou n te r
8 .1
E v e nt Mode
TheIQ S228AS/ BhasEvent M odeim plem ent ed
dur ing 1
-
wir e comm unication. This allows t he
M CU t o m onit or t he PO UT pin
f or st at us
changes ( pr oxim ity or t ouch m ade or r eleased
events) instead of capt uring dat a cont inuously.
Uponast at uschange,t heIQ S228AS/ Bwillpull
t he PO UT pin f or low t o indicate t o t he M CU t o
r eaddat a.ThePO UTpinwillst aylowf or1.6m s.
8 .2
I
2
C
The I
Q S228AS/ B also allow f or I
2
C st ream ing
f ordebugging.DataSt reamingcanbechanged
f r om 1
-
wir e pr otocol t o I
2
C as shown below:
Conf i gurat i on:
Bank2
bi t 7: Streami ngM ode
Bi t
Select i on
0
1
-
Wire Pr otocol
1
I
2
C St r eam ing
The M em ory M ap f or t he IQ S228AS/ B can be
f ound in
Appendix A
.
The IQ S228AS/ B can comm unicat e on an I 2C
ll
-
upr esist or sshouldbeplacedonSDAandSCL.
The Contr ol byt e indicates t he 7
-
bit device
address ( 0x44H) and t he Read/Wr it e indicator
bit .
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®
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®
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9
Auto T uning Imp le mentatio n (AT I)
ATI is a sophist icated t echnology im plement ed
in t he latest
gener ation Pr oxSense
®
devices
t hat opt im ises t he per f orm ance of t he sensor in
a wide r ange of applications and envir onm ent al
condit ions (r efer t o application not e AZD0027
-
Auto TuningI m plem ent at ion) .
ATI m akes adj ust ment s t hr ough ext ernal
r efer ence capa
cit or s unnecessar y ( as r equir ed
by m ost ot her solutions) t o obt ain opt im um
per f or m ance.
9 .1
Full AT I
The IQ S228AS/ B im plem ent s an aut om at ic ATI
algor it hm. This algor it hm aut om atically adj ust s
t he ATI par am eter s t o opt im ise t he sensing
electr odes connect ion t o
t he device.
The device will execute t he ATI algor it hm
whenever t he device st ar t s
-
up and or when t he
counts ar e not wit hin a pr edeter m inedr ange.
There are 2 im port ant def init ions t o under st and
f or ATI:
9 .2
AT IT a rge t
ATI adj usts int ernal cir cuit r y accor ding t o t wo
par amet ers, t he
ATI multi pli er
and t he
AT I
compensati on
.
>
The
ATI mul ti pli er
can be viewed as a
cour seadj ust m entoft heCounts( CS) ,used
t o achieve t he ATI BASE value.
>
The
ATIcompensat i on
isaf ineadj ust
m ent
used t o r eacht he ATI TARG ET value.
With t hese t wo par ameters t he Count s ( CS) of
t he IQ S228AS/ B is t uned unt il an ATI t ar get
value of 1200 is achieved.
9 .3
AT I
BASE
: Si gnifica nc e of AT I Bas e
Asm ent ionedabove, t he
ATImul ti pli er
isused
t o select a base
value f or t he ATI. The ATI
BASEvalueisim port ant ,asthisdet erm inest he
sensit ivit y of t he device. The sensit ivit y can be
def ined as:
Sensit ivit y = ATI TARG ET / ATI BASE
TheATITar getr emainsfixedat1200anditcan
t hus be seen f r om t his t hat a large
r base value
will r esult in a less sensit ive device. The
designer has t he opt ion t o incr ease/r educe the
sensit ivit y of t he syst em t hrough t he ATI BASE
value. For m ost applications t he ATI BASE
should be kept def ault .
The opt ions f or t he ATI BASE values are
as
f ollows:
Conf i gurat i on:
Bank1
bi t 2
-
0
Bi t
Select i on
000
200
001
50
010
75
011
100
100
150
101
250
110
300
111
500
9 .4
S e ns itivity
D
ue to ATI
Theadj ust m ent of t heATI par am et erswillr esult
in variat ions in t he count and sensit ivi
t y.
Sensit ivit y can be observed as t he change in
count as t he r esult of a
f ixed
change in sensed
capacit ance. The ATI param et ers have been
chosen t o provide signif icant over lap. I t m ay
t her ef ore be possible t o select var ious
combinat ions of ATI m ult iplier and ATI
compensat ion set t ings to obt ain t he sam e
count. Thesensit ivit yof the
variousopt ionsm ay
however be dif f er ent f or the same count .
9 .5
AT I P roc e dure
Whilet heAutom aticATIalgor it hmisinprogr ess
t his condit ion will be indicated in t he st r eam ing
dat a and pr oxim ity and touch event s cannot be
det ected. The device will only brief ly r emain in
t his condit ion and it will be ent er ed only when
r elatively lar
ge shift s in t he count has been
det ected.
The aut om atic ATI f unct ion aim s t o m aintain a
const antcount,r egar dlessoft hecapacit anceof
t hesenseelectr ode( wit hint hem axim umr ange
oft he device) .
The eff ect s of aut o
-
ATI on t he application ar e
t hef ollo
wing:
>
Aut omat ic adj ust ment of t he devic e
conf igurat io n and processing paramet er s
f or a wide range of P CB and app licat io n
designst omaint ai naopt imalconf igurat i o n
f or proximity and t ouch det ect ion.
>
Aut omat ic t uning of t he sense elect rod e at
st art
-
up t o o
pt imise t he sensit ivit y of t he
applic at ion.
IQ Sw it ch
®
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®
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>
Aut omat ic re
-
t uning when t he devic e
det ect s changes in t he sensing elect rod es
capacit ance t o acco mmodat e a large
rangeof chang esint heenvironme nt of t he
applic at ion t h at inf lue nces t he sensi n g
elect rode.
>
Re
-
tu
nin g on ly occur s during devic e
operat io nwhenarelat iv elylargesensit iv it y
reduct ion is det ect ed. T his is t o ensure
smoot h operat ion of the device durin g
operat io n.
>
Re
-
t unin g may t emporarily inf lue nces t he
normal f unct ioni ng of the device, but in
most in
st ances t he ef fect will be hardly
not iceab le.
>
Short lyaf t ert hecompletionof t here
-
t unin g
process t he sens it ivit y of a Proximity
det ect ionmaybereduc edslight lyf oraf ew
seconds as int erna l f ilt e rs st abilises.
Autom at ic ATI can be im plement ed so
eff ec
t ively duet o:
>
Excellent syst em signal t o noise rat i o
(SNR).
>
Eff ect ive digit al sign al processing t o
remove AC and ot her n oise.
>
T he very st able core of t he devices.
>
T he built
-
in ca pab ilit y t o accommodat e a
large ran ge of sensing e lect rod e
capacit ances.
IQ Sw it ch
®
Pro x Sens e
®
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10
DYCAL Specifi c set tings
1 0 .1
Rel e as e T hres hold
TheIQ S228AS/ Bhast heopt iont oincreaset hereleaset hresholdwheninTM. Thishelpst hatsm all
variat ions caused by m oving a f inger/ hand on a touch pad will not cause the I C t o exit TM
, m aking
t he solution m or er obust . The opt ions available are shown below:
Conf i gurat i on:
Bank0
bi t 6
Bi t
Select i on
0
75% of Ent r y Delt a
1
87. 5% of Entr y Delt a
Af t er ent er ing TM, as soon as t he LTA f ollows t o wit hin 16 counts, a Ent r y Delt a value is calculated
as:
>
Entr y Delt a=LTA
entry
-
LTA
cur re nt
This calculated Entr y Delt a value is used f or t he Release Threshold as shown above.
I f upon entr y, t he LTA value is
alr eady wit hin 16 Counts, t he Ent r y Delt a is t aken as t he calculated
t oucht hreshold value.
1 0 .2
Input E na ble
TheIQ S228AS/ Bcanbeconf igur edt ohavet heCTRLpinf unct ionasanout putonaPr oxim it yevent.
Choosing t he CTRL pin as out put r emoves t he Filt er Ha
lt and Halt Char ge opt ions of t he pin as an
input.
Using a t ouch event t o act ivate O UT will m ake t he syst em less sensit ive which is needed in some
applications. The LTA will st ill halt wit h t he det ect ion of a pr oxim it y but will not have an
inf luence on
t heO UT pin. The LTA will st ill r e
-
calibrat e once at ouch condit ion is det ected.
Conf i gurat i on:
Bank0
bi t 7
Bi t
Select i on
0
O utput
1
I nput
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®
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®
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11
Electric al Sp ecific a tions
1 1 .1
Abs olute Ma x imum
Spe c ifica tions
Exceeding t hesemaximum specif i cat i ons may cause damaget ot hedevice
.
O per at ing t em per atur e
:
I Q S228AS
-
20°Ct o 85°C
I Q S228B
-
4
0°Ct o 85°C
Supply Volt age ( V
DDHI
V
SS
)
3.6V
M axim um pinvolt age(OUT, CTRL)
V
DDHI
+ 0.
3
V
Pin
volt age ( Cx)
1.7V
M inim um pin volt age ( VDDHI , VREG, O UT, CTRL, Cx)
V
SS
-
0.
3
V
M inim um power
-
on slope
100V/ s
ESD prot ect ion ( VDDHI, VREG , V
SS
, O UT, CTRL, Cx)
8kV
1 1 .2
Ge ne ral Cha rac teri s tic s
I Q S228AS/ B devices ar e r at edf or supply volt ages bet ween 1.8V and 3
. 6V.
Ta b l e
11
.
1
:
IQS2 28 AS/B Gene ra l Ope ra ti ng Co nd i tio n s
DES CRIPT IO N
Co n d it ion s
PARA MET ER
MIN
T YP
MAX
UNIT
Su p p ly vo l tag e
V
DDHI
1.
8
3 .3
3 .6
V
In te rn al reg u l ato r ou tp ut
DDHI
V
REG
1 .6 4
1 .7
1.
75
V
Bo o s t Po wer o pe ra ti n g c u rren t
DDHI
I
IQ S2 2 8 AS/B_ BP
120
129
135
˛
A
Norm a l Po wer op e ra ti n g c u rren t
DDHI
I
IQ S2 2 8 AS/B_ NP
4 .9
6 .4 5
8 .1
˛
A
L o w p o wer1 o pe ra ti n g c u rren t
DDHI
I
IQ S2 2 8 AS/B
L P1
2 .9 5
3 .8
4 .8 5
˛
A
L o w
p o wer2 o pe ra ti n g c u rren t
DDHI
I
IQ S2 2 8 AS/B_ L P2
1 .8 8
<2 .5
1
3 .2
˛
A
C
x
p i n c a p ac i ta n ce
DDHI
C
C
xL o a d
120
pF
Char ge Transf er Tim ings f or low powerm ode isf ound in
Section
7.12
.
Ta b l e
11
.
2
:
Sta rt
-
u p a n d s h u t
-
d o wn sl o pe Ch a rac te ri s ti cs
DES CRIPT IO N
Co n d it ion s
PARA MET ER
MIN
MAX
UNIT
POR
V
DDHI
Sl o p e
1 0 0 V/s
POR
0 .3
2
1.
7
V
VDDHI
re s e tl e ve l
V
DDHI
Sl o p e
1 0 0 V/s
RESET
VDDHI
N/A
1 .7
V
VREG
re s e t le v el
V
DDHI
Sl o p e
1 0 0 V/s
RESET
VREG
N/A
1 .5 8
3
V
1
Al l l ow p ower c urr en t v al ue s aris e fr om
c h arac teriz a tio n do ne fro m (
-
) 35°C to ( + ) 8 5°C a t 3. 3V.
2
F or a p ower c y c le,e ns ure lower ing VDD HI b el ow th e min im um v a lue bef ore r a m pin g VD DHI pas t th e
max im um PO R v a lue
3
F igur e
2
.
4
Cap ac itors C 1 & C3 s h ou ld be c hos e n to c omp ly wit h th is s pec if ic at io n
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®
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®
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1 1 .3
Output Cha ra c teri s tics
1
Ta b l e
11
.
3
:
TOUT Cha ra c te ri sti c s
Symb o l
Desc ript ion
V
OH
Co n d it ion s
MIN
T YP
MAX
UNIT
I
S OURC E
O utput High
volt age
0.9* VDDHI
V
DDHI
= 3.6V
~
~
TBD
mA
0.9* VDDHI
V
DDHI
= 3.3V
~
10
~
0.9* VDDHI
V
DDHI
= 1.8V
TBD
~
~
Symb o l
Desc ript ion
V
OL
Co n d it ion s
MIN
T YP
MAX
UNIT
I
S INK
O utput Low
volt age
100mV
V
DDHI
= 3.6V
TBD
mA
100mV
V
DDHI
= 3.3V
10
100mV
V
DDHI
= 1.8V
TBD
Ta b l e
11
.
4
:
POUT Ch a rac te ri sti c s
Symb o l
Desc ript ion
V
OH
Co n d it ion s
MIN
T YP
MAX
UNIT
I
S OURC E
O utput High
volt age
0.9* VDDHI
V
DDHI
= 3.6V
~
~
TBD
mA
0.9* VDDHI
V
DDHI
= 3.3V
~
10
~
0.9* VDDHI
V
DDHI
= 1.8V
TBD
~
~
Symb o l
Desc ript ion
V
OL
Co n d it ion s
MIN
T YP
MAX
UNI T
I
S INK
O utput Low
volt age
0.1V
V
DDHI
= 3.6V
TBD
mA
0.1V
V
DDHI
= 3.3V
10
0.1V
V
DDHI
= 1.8V
TBD
Ta b l e
11
.
5
:
Comb i ne d Cha ra cte ri s ti cs
Symb o l
Desc ript ion
V
OH
Co n d it ion s
MIN
T YP
MAX
UNIT
I
S OURC E
O utput High
volt age
0.9* VDDHI
V
DDHI
= 3.6V
~
~
TBD
mA
0.9* VDDHI
V
DDHI
= 3.3V
~
17
~
0.9* VDDHI
V
DDHI
= 1.8V
TBD
~
~
Symb o l
Desc ript ion
V
OL
Co n d it ion s
MIN
T YP
MAX
UNI T
I
S INK
O utput Low
volt age
0.1V
V
DDHI
= 3.6V
TBD
mA
0.V
V
DDHI
= 3.3V
20
0.1V
V
DDHI
= 1.8V
TBD
1
I/ O sink capabilit ies only in Act ive Low conf igur ation. I /O sour ce capabilit ies only in Act ive High
conf igur ation.
IQ Sw it ch
®
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®
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1 1 .4
P a c ka ging I nforma tion
1 1 .4.1
T S OT2 3
-
6
Fi g u re
11
.
1
:
TSOT2 3
-
6 Pac k ag i n g
1
Ta b l e
11
.
6
:
TSOT2 3
-
6 Di me nsi o n s
Dimen sion
Min ( mm )
Max (m m)
A
2 .6 0
3 .0 0
B
1 .5 0
1 .7 0
C
2 .8 0
3 .0 0
D
0 .3 0
0 .5 0
E
0 .9 5 Bas ic
F
0 .8 4
1 .0 0
G
0 .0 0
0 .1 0
H
0 .3 0
0 .5 0
I
0°
8°
J
0 .0 3
0 .2 0
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1 1 .4.2
WLCS P
-
8
Fi g u re
11
.
2
IQS2 2 8 B W L CSP
-
8 Di me n si o ns (i n mm)
Top view
Bott om view
Side
view
P i n 1
m
arki ng
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1 1 .4.3
DFN
-
6
DFN
-
6 Packaging
DFN
-
6 Dim ensions
Dimen sion
Min
Max
A
3 .0 0m m
3 .0 0m m
B
2 .5 0m m
2 .5 0m m
C
0 .3 0m m
0 .3 0m m
D
0 .3 5m m
0 .3 5m m
E
1 .3 0m m
1 .3 0m m
F
2 .2 0m m
2 .2 0m m
G
0 .0 5m m
0 .0 5m m
H
0 .7 5m m
0 .7 5m m
I
0 .8 0m m
0 .8 0m m
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1 1 .4.4
MS L Le v e l
M oist ure Sensi ti vit y Level
(M SL) r elates t o t he packaging and handling precautions f or some
semiconductor s. TheM SLisanelectr onicst andardf ort het im eper iodinwhicham oist ur esensit ive
device can be exposed to ambient r oom condit ions ( appr oxim at ely 30°C/85%RH see J
-
STD033C
f
or m or e inf o) bef ore r ef low occur.
Pac kag e
L evel( d u r atio n )
TSOT2 3
-
6
Ref l o w p rofi le p ea k te mp e ra tu re < 2 60 °C f o r< 3 0 s ec o nd s
WL CSP
-
8
Non
-
e n ca ps u l ate d d e vi ce
not m o is tu re se n si tiv e
Ref l o w p rofi le p ea k
te mp e ra tu re < 2 60 °C f o r< 3 0 s ec o nd s
DFN
-
6
Ref l o w p rofi le p ea k te mp e ra tu re < 2 60 °C f o r< 3 0 s ec o nd s
IQ Sw it ch
®
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®
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12
Datash eet an d Part
-
number I nform ation
1 2 .1
Orde ring Informa tion
O r der swillbesubj ectt oaMO Q(M inim umO r der Q uantity) of af ullr eel. Contactt heoff icialdist r ibut or
www. azot eq. co
m
.
For large order s, Azoteqcan provide pre
-
conf igured devices.
ThePart
-
num ber canbegener atedbyusingUSBPr og. exeor t heI nt eract ivePart Num ber gener ator
on t he websit e.
I C NAM E
I Q S228AS
=
I Q S228 Self Capacit ive
I Q S228B
=
I Q S228 Self
Capacit ive
CO NFIG URATIO N
zzz zzz zz
=
I C Conf igur at ion( hexadecim al)
PACKAG E TYPE
TS
=
TSO T23
-
6 package
C
S
=
WLCSP
-
8 package
DN
=
DFN
-
6 package
BULK PACKAG I NG
R
=
Reel
TSO T23
-
6 andWLCSP
-
8:
3000pcs/ r eel
DFN
-
6: 6000pcs/r eel
=
M OQ = 1r eel
( or der s shipped asf ull r eels)
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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1 2 .2
Dev ice Ma rk ing
T op
1 2 .2.1
T S OT2 3
-
6 P a ck a ge Ma rk ings
There ar e 2 m ar king versions in circulation f or I QS228AS
and IQ S228B
:
Fi g u re
12
.
1
:
Fi rs t Ma rki n g Va ria n t o fIQS2 2 8 AS
Fi g u re
12
.
2
:
Sec o nd Ma rk in g Va ri a n t o f IQS2 28 AS
Fi g u re
12
.
3
:
Fi rs t Ma rk i n g Va ria n t o fIQS2 2 8
B
Fi g u re
12
.
4
:
Sec o nd Ma rk in g Va ri a n t o f IQS2 28 B
I C NAM E
228A
=
I Q S228AS Self Capacit ive
22
-
A
=
I Q S228AS Self Capacit ive
228B
=
I Q S228B Self Capacit ive
22
-
B
=
I Q S228B Self Capacit ive
Batch Code
xx
=
AA
t o ZZ
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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1 2 .2.2
WLCS P
-
8 P a ck a ge Ma rk ings
Fi g u re
12
.
5
To p Ma rk in g o f I QS2 2 8 B W L CSP Pa ck a g e
I C NAM E
228B
=
I Q S228B Self Capacit ive
Batch Code
xx
=
AA
ZZ
I C VERSI O N
V
Product Code
PPP
1 2 .2.3
DFN
-
6 P a c ka ge
Ma rk ings
Fi g u re
12
.
6
IQS2 2 8 B
DFN
-
6 Pa c ka g e To p Ma rk i n g
I C NAM E
22
-
B
=
I Q S228B Self Capacit ive
Batch Code
xx
=
AA t o ZZ
IQ Sw it ch
®
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®
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1 2 .3
T a pe
a nd Ree l
S pe c ific a tion
Fi g u re
12
.
7
: TSOT2 3
-
6 T ap e Sp e c ifi ca ti on .
Ta b l e
12
.
1
Ta pe a nd Re el Di me n s io n s
Dev ic e
P ack age
Ty pe
P ack age
D ra wi ng
P ins
QTY
per
reel
Reel
Di a m ete r
(mm )
Reel
Wi dth
W1 (mm )
A0
(mm )
B0
(mm )
K0
(mm )
P1
(mm )
W
(mm )
P in1
Quadrant
I QS2
2
8
AS
z zzz zzz zTS R
TS OT23/ 6
TS OT23
-
6
6
3000
17 8
9. 5
3. 1
3. 1
1. 3
4
8
Q
3
I QS22
8
Bzz zzz zzz TS R
TS OT23/ 6
TS OT23
-
6
6
3
000
17 8
9. 5
3. 1
3. 1
1. 3
4
8
Q
3
I QS22
8
Bzz zzz zzz CS R
WLCS P 8
WLCS P
-
8
8
3000
17 9
8. 4
1
1 . 5 5
0. 48
4
8
Q3
I QS228Bzz zzz zzz DNR
DFN6
DFN
-
6
6
6000
330
12. 4
2. 8
3. 3
1. 2
4
12
Q1
IQ Sw it ch
®
Pro x Sens e
®
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Appendi x A.
Memory Map
Device Inform ation
[ 00H] PRO D_NR
The pr oduct num berf or the IQ S228A is 39 ( decimal) .
[ 01H] SW_NR
Thesof t war eversionnum beroft hedeviceRO Mcanber eadint hisbyte.Thelatestsof t wareversion
is 29 ( decim al) .
[ 10H] SYSFLA G S0
Bit 7
-
6:
SYSTEM _USE
Bit 5:
Logic:
LogicO utput I ndication
0 = Act ive Low
1 = Act ive High
Bit 4:
Halt :
I ndicat es Filt er Halt st at us
0 = LTA not being Halt ed
1 = LTA Halt ed
Bit 3:
LP:
Low PowerM ode
0 = Samplet im e BP
1 = Samplet im e LP
Bit 2:
ATI:
St atus of aut omat ed ATI r out ine
00H
Pro d u ct Nu mb e r ( P RO D_ NR)
Bit
7
6
5
4
3
2
1
0
Access
Value
39 ( Decim al)
R
Note
01H
So f t w are Num b er ( S W_ N R)
Bit
7
6
5
4
3
2
1
0
Access
Value
29 ( Decim al)
R
Note
10H
Syst em Flag s (
Sy s_F lag s )
Bit
7
6
5
4
3
2
1
0
Access
Value
~
Logic
Halt
LP
ATI
ND
Zoom
R
Note
IQ Sw it ch
®
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®
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0 = ATI is not busy
1 = ATI in progr ess
Bit 1:
ND:
This bit indicatest he pr esence of noise int erf erence.
0 = I C has not det ectedthe presence of noise
1 = I C has det ected t hepresence of noise
Bit 0:
ZOOM :
Zoom will indicate f ull
-
speed char ging once an undebounced proxim it y is
det ected. I n BP m ode, t his
will not changet he charging fr equency.
0 = I C not zoom ed in
1 = I C det ect ed undebounced pr oxim it y andI C ischar ging at f ull
-
speed ( BP)
[ 31H] St atus
Bit 7:
Dycal:
Dycal Detect ion
0 = Not Act ive
1 = Act ive
Bit 6:2:
SYSTEM _USE
Bit 1:
Touch:
Touch Detect ion
0 = Not Act ive
1 = Act ive
Bit 0:
Prox:
Pr oxim it y Detect ion
0 = Not Act ive
1 = Act ive
31H
St atu s
Bit
7
6
5
4
3
2
1
0
Access
Value
DYCAL
Touch
Pr oxim it y
R
Note
42H
Co u n t s_Hig h ( CS _H)
Bit
7
6
5
4
3
2
1
0
Access
Value
Counts High Byt e
R
Note
IQ Sw it ch
®
Pro x Sens e
®
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43H
Co u n t s_L o w ( CS_L)
Bit
7
6
5
4
3
2
1
0
Access
Value
Counts Low Byt e
R
Note
83H
L T A_High ( L T A_H)
Bit
7
6
5
4
3
2
1
0
Access
Value
Long Term Aver age High Byt e
R
Note
84H
L T A_Lo w ( L T A_L)
Bit
7
6
5
4
3
2
1
0
Access
Value
Long Term Aver age Low Byt e
R
Note
C4H
F u se Bank 0( F B_ 0)
Bit
7
6
5
4
3
2
1
0
Access
Value
See
Table
3
.
1
f or m ore details
R
Note
C5H
F u se Bank 1( F B_ 1)
Bit
7
6
5
4
3
2
1
0
Access
Value
See
Table
3
.
2
f or m ore details
R
Note
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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[ C8H]
Defaul t CommsPoint er
Thevaluest or edint hisregist erwillbeloadedintot heCom msPointer at t hest ar tofacom m unicat ion
window. For example, if t he design only r equir es t he Pr oxim it y St at us inf or m at ion each cycle, t hen
t he
DefaultCom m sPointer
. Thiswouldm eant hatatt hest ar tofeach
comm unicat ion window, t he comm s pointer would alr eady be set t o t he Pr oxim it y St at us r egist er,
sim ply allowing a READ t or etr ieve t he dat a, wit hout t he need of set t ing up t he address.
C6H
F u se Bank 2( F B_ 2)
Bit
7
6
5
4
3
2
1
0
Access
Value
See
Table
3
.
4
f or m ore details
R
Note
C7H
F u se Bank 3( F B_ 3)
Bit
7
6
5
4
3
2
1
0
Access
Value
See
Table
3
.
5
f or m ore details
R
Note
C8H
DEF AUL T _CO MM S_ PO IN T ER
Bit
7
6
5
4
3
2
1
0
Access
Value
( Beginning of Device Specif ic Data)
R/ W
Default
10H
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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Appen dix B.
Errata
Filte r
H
a lt
T
ime s
W
bit isset, t hehalt t im esasspecif iedinSection
3
willbescaled16xlonger,
due t o added dead t im ewhen t heI C
cor e is t ur ned off t or educe power consum ption:
Us er Se lec tab le Conf ig urati on O pt ions : Ba nk 1
F ul l A T I (
0x C5H
)
t
HA LT 1
t
HA LT 0
~
~
TURBO
BASE
2
BASE
1
BASE
0
bit 7
bit 0
Bank1: bi t 7
-
6
t
HAL T
:
Halt tim es
S ect ion
7. 11
00 = 320s ec onds
01 = 640s ec onds
10 = Nev er
11 = 48s ec onds
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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Appendi x C.
Contact I nform atio n
V
isit
www. azot eq. com
f or a list of
dist r ibut ors and worldwide r epr esent at ion.
USA
A sia
Sout hA f ri ca
Physical
A ddress
11940 Jollyville
Suit e 120
-
S
Austin
TX 78750
USA
Room
501A,
Block
A,
T
-
Shar e
I nter nat ional
Centr e,
Taoyuan
Road,
Nanshan
Dist r ict,
Shenzhen,
G uangdong,
PRC
1 Bergsig Avenue
Paar l
7646
Sout h Afr ica
Post al
A ddress
11940 Jollyville
Suit e 120
-
S
Austin
TX 78750
USA
Room
501A,
Block
A,
T
-
Shar e
I nter nat ional
Centr e,
Taoyuan
Road,
Nanshan
Dist r ict,
Shenzhen,
G uangdong,
PRC
PO Box 3534
Paar l
7620
Sout h Afr ica
T el
+1 512 538 1995
+86 755 8303 5294
ext 808
+27 21 863 0033
Emai l
info@azoteq.com
info@azoteq.com
info@azoteq.com
P
ate nts
as l is ted on
www. a z oteq.c om /pat ents
-
tr ad ema r k s /
may
r elate to t he dev ic e or us ag e of the dev ic e
.
Az oteq
®
,Cr y s tal Dr iv er
,IQ Sw itc h
®
,Pr ox S ens
e
®
,Pr ox F us ion
®
log o ar e tr ade mar k s of Az o teq.
T h e in fo r m atio n in t h is Data sh e e t is b e lie ve d to b e a ccu r a te a t t h e tim e o f p ub lica tio n . Azo te q u se s r e a son a b lee ff o rt to m a
inta in th e in form a tio n up
-
to
-
d a te a n d a ccu ra te ,b u t do e s
n o twarr a n tth e a ccu r a cy,co m p le te n e sso rr e lia b ilityo fthe inf or m a tio n c
o r warr a n tie s, e xpr e ss or imp lie d , of a n y kind , inclu d ing r e pr e se n tatio n s ab o u t th e su ita b ility o f the se pr o d u cts o r inf or m a t
ion for a n y p ur po s
e . Azo teq d iscla im s a ll war r a ntie s a nd
co n d ition s with r e g ar d to th e se pr o d u cts a nd inf o r m a tio n , inclu d ing b u t no t lim ite d to a ll im plie d war r a n tie s a nd co n d ition s
o f m er ch a n ta b ility, fitn e ss fo r a p a r ticu lar p u r p o se , title
a n d n o n
-
infr ing em e n t o f a n y th i
r d pa r ty int e llectu a l p r o p er ty r igh ts. Azo te q a ssum e s n o lia b ility fo r a n y d a m a g e s o r injur y a r isin g fr om a n y u se o f th e inf o
r m a tion o r th e p r od u ct o r
ca u se d b y, with o u t lim ita tio n , fa ilu r e o f pe r form a n ce , e r r or , om issio n , inte r ru p tio n , d e fe ct, de lay in o p
e r a tio n o r tr a n sm issio n , e ve n if Azo te q h a s b e e n a d vised o f th e p o ssibility of
su ch d a m a ge s. T h e ap p lica tio n s m en tio n e d he r e in a r e u se d so lely fo r the p u r po se o f illustr a tio n a n d Azo teq m a ke s n o war r a n ty
o r r e pre se n ta tio n tha t su ch a p p lica tio n s will b e
su i
ta b le with o u t fur th er m o d ificatio n , n or r e com m e n d s th e u se o f its pr o d u ctsfo r a pp lica tio n t h a t m a y pr e se n t a r isk to h um a n l
ife d ue t o m a lfu n ctio n or o th er wise . Azo te q pr o d u cts
a r e n o t au th o r ized fo r u se a s cr itical com p o ne n ts in life su p p or t d e vices or s
yste m s. No lice n se s to p a te n ts a re g r a nte d , im p licitly, e xp re ss o r im p lie d , b y e sto p pe l o r o the r wise,
u n d e r a n y inte lle ctu a l p r o pe r ty r igh ts. In th e e ve n t tha t a n y o f th e a b o vem e n tio n ed lim ita tio n s o r e xclusio n s d o e s n o t a p p ly
to ta l lia b ility fo r a ll losse s,
d a m a g e s an d ca u se s o f a ction ( in co n tr a ct, to r t ( inclu d ing witho u t lim ita tio n , ne g lig e n ce) or o th e r wise) will n o t e xce e d th e
am o u n t a lre ad y p a id b y th e cu sto me r fo r th e p r od u cts.
Azo te q r e se r ve s the r igh t to a lter its p r o d u
cts, to m a ke co r r e ctio n s, d e let ion s, m o d ificat ion s, e n h a n ce m en ts, im p ro ve m en ts a n d o th er ch an g e s to th e co n ten t a n d inf o rm a ti
o n, its
p r o d u cts, p ro g r am s an d ser vices a t an y time o r to m o ve or d iscon tin u e a n y co n te nts, pr o d ucts, p r og r am s or ser vices with ou t
pr ior n o tificatio n . Fo r t h e m o st u p
-
to
-
d ate info r m ation
a n d b ind ing T er m s a nd Co n d ition sp lea se r e fer t o
www.a zo teq .co m
.
i nfo@azoteq. com
| Operation temperature | Not Found |
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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IQ S228A
S
/B D AT ASHEET
Single channel capacit ive pr oxim it y
and t ouch cont r oller
The Pr oxSense
®
IQ S228A S/ B
is a single channel self
-
capacit ive sensor wit h Dynam ic Calibrat ion
Feature s
>
1 Self capacit ive channel
>
>
Pr oxim it y and Touch output s
>
Autom at ic Tuning
>
I nter nal Refer ence Capacit or
>
M inim um exter nal com ponent s
>
1
-
Wire dat a str eam ing
>
I
2
C Debug opt ion
>
User selectable opt ions (O TP):
>
Ext sync cont r olor Ext f ilt er contr ol
>
I /O Sink or Sour ce selection
>
Tim e
-
out f or st uck key
>
Pr oxim it y and Touc
h sensit ivit y selections
>
Low Power
m odes
>
Low powerm ode 2. 5
A
>
Supply volt age: 1.8V t o 3. 6V
Applicati ons
>
Pr oxim it y sensors
>
SAR det ectionf or Tablets
>
On
-
ear det ection f or m obile phones
>
3D glasses
>
Personal M edia Player s
>
Whit e goods and appliances
>
HumanI nter f ace Devices
>
Pr oxim it y activat ed backlight ing
Ava il a ble O ptions
T
A
T SO T 23
-
6
WL CS P
-
8
DF N
-
6
-
20
°
C t o 85
°
C
I Q S228AS
-
-
-
40
°
C t o 85
°
C
I Q S228B
I Q S228B
I Q S228B
R oH S2
Com pl i ant
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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Contents
I QS 22 8AS /B DA TAS HE E T
................................
................................
................................
................................
.....................
1
1 OVE RV IE W
................................
................................
................................
................................
................................
........
5
1.1
D
E V I CE
................................
................................
................................
................................
......................
5
1.2
O
P E RATI ON
................................
................................
................................
................................
................
5
1.3
A
P P LI CA BI LITY
................................
................................
................................
................................
............
5
2 PACKA GIN G A ND P IN
-
OU T
................................
................................
................................
................................
...............
6
2.1
IQ S2 28 AS/ B
................................
................................
................................
................................
.............
6
2.1.1 P in
-
ou t TSOT 2 3
-
6
................................
................................
................................
.............................
6
2.1.2 P in
-
ou
t W LC SP
-
8
................................
................................
................................
..............................
7
2.1.3 P in
-
ou t DFN
-
6
................................
................................
................................
................................
....
8
2.2
S
CHE MA TI C
................................
................................
................................
................................
................
9
2.2.1 TSO T 23
-
6
................................
................................
................................
................................
..........
9
2.2.2 W LCS P
-
8
................................
................................
................................
................................
.........
10
2.2.3 DF N
-
6
................................
................................
................................
................................
..............
11
3 U S E R CON FI GURA BLE OPT IONS
................................
................................
................................
................................
.....
12
3.1
C
ONFI GURI NG
D
EV I CE S
................................
................................
................................
............................
12
3.1.1 IQ S2 28 AS/ B Us er
Se lec tab le O pti ons
................................
................................
............................
12
4 ME A S URIN G CAPA CI TAN CE US IN G T HE
C HA RGE T RANS FER
ME TH O D
................................
................................
..........
15
................................
................................
................................
................................
......................
16
6 OPE RA TIN G PR INC IPLE
................................
................................
................................
................................
...................
17
7 CO NFI GURA BLE S E TTIN GS
................................
................................
................................
................................
..............
17
7.1
CT RL:
E
XTE RNA L
C
ONTROL
................................
................................
................................
.....................
17
7.1.1 Char g e H alt
................................
................................
................................
................................
......
17
7.1.2 Ha lt LT A Fi lter
................................
................................
................................
................................
..
17
7.1.3 Pu ls e
o n CTR L:
................................
................................
................................
...............................
17
7.2
LO G IC
................................
................................
................................
................................
....................
18
7.3
RF
N
OI S E ON
IQ S228AS /B
................................
................................
................................
......................
18
7.3.1 ND: RF Nois e Det ec ti on
................................
................................
................................
..................
18
7.3.2
IQ S2 28 AS/ B RF Nois e Im mun ity
................................
................................
................................
.....
18
7.4
P
ROXI MI TY
T
HRE S HOLD
................................
................................
................................
............................
19
7.5
T
OUCH
T
HRE S HOLD
................................
................................
................................
................................
.
19
7.6
M
ULTI P LI E RS
................................
................................
................................
................................
............
19
7.7
C
HA RGE
T
RA NS FE R
................................
................................
................................
................................
.
19
7.8
T
A RGET
C
OUNTS
................................
................................
................................
................................
.....
19
7.9
E
NA B LE
P
A RTIA L
AT I
................................
................................
................................
................................
19
7.10
DY CA L
T URBO
................................
................................
................................
................................
....
20
7.11
F
I LTE R
H
A LT
................................
................................
................................
................................
..........
20
7.12
L
OW
P
OWE R
M
ODE S
................................
................................
................................
..............................
20
7.13
Z
OOM
................................
................................
................................
................................
....................
20
8 S T RE A MIN G M ODE
................................
................................
................................
................................
.........................
21
8.1
E
V E NT
M
ODE
................................
................................
................................
................................
...........
22
8.2
I
2
C
................................
................................
................................
................................
..........................
22
9 A U TO TU NING IM PLE ME NTAT I
O N (A TI)
................................
................................
................................
.........................
23
9.1
F
ULL
AT I
................................
................................
................................
................................
.................
23
9.2
AT I
T
A RGET
................................
................................
................................
................................
.............
23
9.3
AT I
BAS E
:
S
I GNI FI CA NCE OF
AT I
B
A SE
................................
................................
................................
........
23
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9.4
S
E NS I TIV I TY
D
UE TO
AT I
................................
................................
................................
..........................
23
9.5
AT I
P
ROCE DURE
................................
................................
................................
................................
......
23
1 0 DY CA L S PE C IFI C S E TTI NGS
................................
................................
................................
................................
............
25
10.1
R
E LE A SE
T
HRES HOLD
................................
................................
................................
............................
25
10.2
I
NP UT
E
NA B LE
................................
................................
................................
................................
........
25
1 1 E LE CTR ICA L S PE CIF I CA TI ONS
................................
................................
................................
................................
........
26
11.1
A
B S OLUTE
M
A XIMUM
S
PE CI FI CA TI ONS
................................
................................
................................
....
26
11.2
G
E NE RA L
C
HA RA CTE RI STI CS
................................
................................
................................
..................
26
11.3
O
UTP UT
C
HA RA CTE RIS TI CS
................................
................................
................................
....................
27
11.4
P
A CK A GI NG
I
NFORMA TION
................................
................................
................................
......................
28
11.4. 1 TSO T 2 3
-
6
................................
................................
................................
................................
......
28
11.4. 2 WLC SP
-
8
................................
................................
................................
................................
.......
29
11.4. 3 DFN
-
6
................................
................................
................................
................................
............
30
11.4. 4 M SL Lev e l
................................
................................
................................
................................
......
31
1 2 DATAS HE E T A ND PART
-
NU M BE R INF OR MATI ON
................................
................................
................................
.........
32
12.1
O
RDE RI NG
I
NFORMATI ON
................................
................................
................................
........................
32
12.2
D
EV
I CE
M
A RK I NG
T
OP
................................
................................
................................
.........................
33
12.2. 1 TSO T 2 3
-
6 Pac k age Mar k ings
................................
................................
................................
.......
33
12.2. 2 WLC SP
-
8 Pac k ag e Mar k ings
................................
................................
................................
........
34
12
.2. 3 DFN
-
6 Pac k ag e M ark ings
................................
................................
................................
.............
34
12.3
T
A P E A ND
R
EE L
S
PE CI FICA TI ON
................................
................................
................................
..............
35
A P PE ND IX A . ME M OR Y MAP
................................
................................
................................
................................
.............
36
A P PE ND IX B . E RRA TA
................................
................................
................................
................................
........................
40
F
I LTE R
H
A LT
T
I
MES
................................
................................
................................
................................
........
40
A P PE ND IX C . C ONTA CT I NF ORMA TI ON
................................
................................
................................
.............................
41
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List of Ab brevi ation s
ATI
Autom at ic TuningI m plem ent at ion
BP
Boost Power M ode
CS
Counts( Number of Charge Transf ers)
C
s
I nter nal Refer ence
Capacit or
DYCAL
TM
Dynam ic Calibrat ion
EM I
Electr omagnet icI nter f erence
ESD
Electr o
-
St atic Dischar ge
FTB/ EFT
( Electr ical) Fast Transient Burst s
G ND
G r ound
HC
Halt Char ge
LP
Low PowerM ode
LTA
Long Term Aver age
ND
Noise Det ect
THR
Thr eshold
TM
Touch M ode
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Overvi ew
1 .1
Dev ice
The
I Q S228AS/ B
is a single channel
capacit ive proxim it y and t ouch device which
employs an inter nal volt age r egulator and
r efer ence capacit or ( C
s
).
The IQ S228AS/ B device has a dedicat ed
pin(s)
f or t he connect ion of a sense
electr ode(s) ( Cx) and out put pin(s) f or
proxim it y and t ouch event s on O UT. The
polarityoft heoutput pinscanbeconf igur ed. A
1
-
wir e open drain dat a str eam ing pr otocol O R
I
2
C inter f ace is im plement ed f or debugging
pur poses.
Special device conf igur at ion can be done by
sett ingonet im epr ogr amm able(O TP)opt ions.
The device aut om atically t r acks slow varying
envir onm ent al changes via var ious signal
processing algor it hm s and has an Autom atic
Tuning Im plement ation ( ATI ) algor it h
m t o
calibrat et he device t o t he sense elect r ode.
f orm of hyst er esis t hat can t r ack slow var ying
envir onm ent al change even while t he sensor
is in a t ouch st at e. This is ideal f or port able
applications.
The
char ge
t r ansf er
method of capacit ive
sensingisemployedontheIQ S228AS/ B.( The
char ge t r ansf er pr inciple is t hor oughly
descr ibed in t he applicat ion not e:
-
1 .2
Ope ra tion
The device has been designed t o be used in
applications wher e proxim it y is r equir ed and
t ouch condit ions can prevail f or an extended
per iod of t im e which m ay r esult in
uncompensat ed dr if t in convent ional
capacit ive sensor s.
Alowt hresholdisusedtodet e
ct t hepr oxim it y
of an obj ect, wit h a higher t hreshold f or t ouch
det ection.
Dynam ic Calibrat ion is perf orm ed when a
TOUCH condit ion is detected f or longer t han
t
DY CA L
. Thehyst er esisalgor it hmwillnowcheck
f ort her eleasecondit ionoft het ouch,whiles
t ill
t r acking envir onm ent al changes
1 .3
Applic a bili ty
All
specif ications, except wher e specif ically
m ent ioned ot her wise, provided by t his
dat asheet
are applicable t o t he f ollowing
r anges:
>
Tem per at ure:
I Q S228AS:
-
20
°
Ct o+85
°
C
I Q S228B:
-
40°Ct o+85°C
>
Supply volt age( V
DDHI
) : 1.8V t o 3. 6V
IQ Sw it ch
®
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®
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2
Packag ing
an d Pin
-
Out
TheIQ S228AS/ BisavailableinaTSO T23
-
6package.
t heIQ S228BisavailableinTSO T23
-
6
, DFN
-
6
or WLCSP
-
8
package
2 .1
IQ S 2 28 AS/ B
2 .1 .1
P in
-
out
T S OT2 3
-
6
Fi g u re
2
.
1
:
Pi n
-
ou t o f I QS2 2 8 AS/B i n t he T SOT23
-
6 pa ck a g e.
Ta b l e
2
.
1
:
Pi n
-
ou t de sc ri p ti o n
IQ S22 8AS /B in T SO T 23
-
6
Pi n
Nam e
Ty p e
Fu n c ti o n
1
OUT
Dig i tal Out
Ou tp u t
2
GND
Gro u n d
GND Re fe re n c e
3
CTRL / ND
Dig i tal I n pu t/ Ou tpu t
Con tro l i n pu t o rp ro xi mi ty o u tpu t / ND p in
4
VREG
An a l o gu e Outp u t
In te rn al Re gu l a to r Pin (Co n nec t 1
µ
Fb y pa ss ca p ac i to r)
5
VDDHI
Su p p ly I np u t
Su p p ly Vo lta g e I n pu t
6
CX
An a l o gu e
Se n s e El ec tro de
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®
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®
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2 .1 .2
P in
-
out WLCS P
-
8
Ta b l e
2
.
2
8
-
pi n W L CSP Pi n
-
ou t Desc ri pti o n
IQ S2
2 8B
8
-
p in WL C SP
Pin
Nam e
Ty pe
Fu nc tio n
1
Cx
Se n s e e l ec trod e
Con n e ct to c o nd uc tiv e a re a in te n d e d f o r
s e ns o r
2
OUT
Dig i tal Out
Ou tp u t
3
VREG
Reg u l a to r ou tp u t
Req u i res ex te rn a l c a pa c ito r
4
VSS
Si g n a l GND
5
INPUT
Dig i tal I n pu t
Fl o a ti n g i n pu t d u ri n g ru n ti m e.
Rec o mm en d e d: Con ne c tto
POUT
6
POUT
/ ND
Dig i tal I n pu t/ Ou tpu t
Con tro l i n pu t o r
p ro xi mi ty o u tpu t / ND p in
7
VDDHI
Su p p ly I np u t
Su p p ly Vo lta g e I n pu t
8
PGM
Con fi g u ra tio n pi n
Con n e cti on f o r OTPp ro g ramm i n g. Flo a tin g in p u t d u ri n g
ru n tim e .
Rec o mm en d e d: Con ne c tto
OUT
p i n . Pro g ram mi n g c a n
s ti ll b e p e rfo rm ed us i ng t hi s pin , p rov i de d a d i od e is
u s e d. (Se e AZD0 2 6
Con fi g ura ti o n T o ol s Ove rvi e w)
IQ S228
1
2
3
4
8
7
6
5
Fi g u re
2
.
2
IQS2 2 8 B8
-
p i n W LCSP
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2 .1 .3
P in
-
out
DFN
-
6
Fi g u re
2
.
3
: Pi n
-
o u t of IQS2 2
8B
i n DFN
-
6 p a ck a ge .
Ta b l e
2
.
3
:Pi n
-
ou t de sc ri p ti o n .
IQ S22 8
B
6
-
p in DF N
Pin
Name
T ype
F u n ctio n
1
OUT
Dig i tal Out
Ou tp u t
2
GND
Gro u n d
GND Re fe re n c e
3
CTRL / ND
Dig i tal I n pu t/ Ou tpu t
Con tro l i n pu t o r
p ro xi mi ty o u tpu t / ND p in
4
VREG
An a l o gu e Outp u t
In te rn al Re gu l a to r Pin (Co n nec t 1
µ
Fb y pa ss
c a p ac i to r)
5
VDDHI
Su p p ly I np u t
Su p p ly Vo lta g e I n pu t
6
CX
An a l o gu e
Se n s e El ec tro de
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2 .2
S c he ma tic
2 .2 .1
T S OT2 3
-
6
Fi g u re
2
.
4
:
Typ i ca l ap p li ca ti on re fe re nc e s ch e ma tic o fIQS2 28 AS/B. C2 &C3 are op ti on a l for a d d ed RF i mmu n i ty .
Fi g u re
2
.
5
:
IQS2 2 8 AS/Bo u tp ut p i n c o nfi gu ra tio n
fo r I 2 C de bu g o pe ra tio n ,o r d riv in g L EDs (a c tiv e h i g h o r lo w o p ti o n
a v a il a bl e ).
Where a syst em level ESD st r ike is f ound t o cause t he I C t o go int o ESD induced latch
-
up, it is
suggest edt hatt hesupplycurr ent t ot heI Q S228ICislim it edbym eansof ase
r iesr esist or t hat could
lim it t he m axim um supply curr ent t ot heI C t o <80m A.
Ref e r t o AZD0 0 8 fo r
to u ch k ey de si g n
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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2 .2 .2
WLCS P
-
8
Fi g u re
2
.
6
Ty pi ca l ap p li c ati o n re fe re nc e s ch e ma tic o fIQS2 2 8B
WL CSP
-
8 Pac k ag e
. C2 &C3 a re o pti on a l fo r ad d e d RF
i mmu n i ty .
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®
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2 .2 .3
DFN
-
6
Fi g u re
2
.
7
Ty pi ca l ap p li c ati o n re fe re nc e s ch e ma tic o fIQS2 2 8B
DFN
-
6 Pa ck a ge
. C2 &C3a re o p ti o n al f o ra d de d RF
i mmu n i ty .
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®
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®
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3
User Co nfigur able Options
This section list
s t he user conf igur able
sett ings.
The
deviceisf ullyf unct ionalinit sdef aultst at e,
but som e applications may r equir e alt ernat ive
conf igur ation sett ings. These sett ings are
enabled by conf igur ing O ne Tim e
Pr ogr amm able( O TP) user opt ions.
Conf igur ation c
an be done on packaged
devices or in
-
cir cuit. I n
-
cir cuit conf igur at ion
m ay be lim it ed by values of ext ernal
components chosen.
Popular conf igur at ions ar e available ex
-
st ock
please check wit h t he local dist r ibutor f or
availabil it y. Azoteq can supply pre
-
c
onf igur ed
devices f or large quant it ies.
3 .1
Configuri ng Dev ic es
Azoteqof f er saConf igurationTool( CT210/ 20)
and accom panying software ( USBPr og. exe)
t hat can be used t o progr am t he O TP user
opt ions f or pr otot yping purposes. M or e det ails
r egarding t he conf igur at ion of t he device wit h
t he USBPr og progr am is explained by
application not e:
AZD007
USBPr og
O verview
which can be f ound on t he Azot eq
websit e.
Alt ernat ive pr ogr am m ing solutions f or t he
I Q S228AS/ B also exist . For f ur t her enquir ies
r egarding t his, please cont act Azot eq at
Pr oxSenseSuppor t @azot eq. com or t he loc
al
dist r ibut or
3 .1 .1
IQ S 2 28 AS/ B Use r Se le c table O ptions
Ta b l e
3
.
1
:
IQS2 2 8 AS/B Ba nk 0 Us e r Se l ec ta bl e Opti o ns (0xC4H)
Bi t
7
6
5
4
3
2
1
0
Name
I N_EN
REL
T HR
LOGI C
T
T HR 2
T
T HR 1
T
T HR 0
P
T HR 1
P
T HR 0
bi t 7
I N_E N:
I nput E nable
S ect ion
10. 2
0 = Out put (P rox imi ty )
1 = I nput
bi t 6
RE L
T HR
:
Releas e Thres hold
S ect ion
10. 1
0 = 75%
1 = 87%
bi t 5
LOGIC:
Out put logics elect (Only when S TREA MI NGmode is
dis abled)
S ect ion
7. 2
0 = S of t ware Open Drain Act iv e Low
1 = Act iv e High
bi t 4
-
2
T
T HR
:
Touc h Thres holdS elect ions
S ect ion
7. 5
000 = 72/ 256
001 = 4/ 256
010 = 8/ 256
011 = 24/ 256
100 = 48/ 256
101 = 96/ 256
110 = 128/ 256
111 = 160/ 256
bi t 1
-
0
P
T HR
:
P rox imi ty Thres hold S elec t ions
S ect ion
7. 4
00 = 4
01 = 2
10 = 8
11 = 16
IQ Sw it ch
®
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®
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Ta b l e
3
.
2
:
Us e r Se l ec ta bl e Con fi g u ra ti on Opt io n s: Ba nk 1
Fu l l ATI (0x C5H)
t
HA LT 1
t
HA LT 0
~
~
TURBO
BASE
2
BASE
1
BASE
0
bit 7
bit 0
Bank1: bi t 7
-
6
t
HAL T
:
Halt tim es
S ect ion
7. 11
00 = 20s ec onds
01 = 40s ec onds
10 = Nev er
11 = 3s ec onds
Bank1: bi t 5
-
4
Not used
Bank1: bi t 3
T URBO:
DY CA LTURB O
S ect ion
7. 10
0 = Dis abled
1 = E nabled
Bank1: bi t 2
-
0
BAS E :
B as e V alue
S ect ion
9. 3
000 = 200
001 = 50
010 = 75
011 = 100
100 = 150
101 = 250
110 = 300
111 = 500
Ta b l e
3
.
3
:
Us e r Se l ec ta bl e Con fi g u ra ti on Opt io n s: Ba nk 1
Pa rti a l AT I
t
HA LT 1
t
HA LT 0
M ULT
S E NS E 1
M ULT
S E NS E 0
M ULT
COMP 3
M ULT
COMP 2
M ULT
COMP 1
M ULT
COMP 0
bit 7
bit 0
Bank1:7
-
6
t
HAL T
:
Halt tim es
S ect ion
7. 11
00 = 20s ec onds
01 = 40s ec onds
10 = Nev er
11 = 3s ec onds
Bank1: bi t 5
-
4
MULT
: Mult iplier f orS ens it iv ity
S ect ion
7. 6
00
01
10
11
Bank1: bi t 3
-
0
MULT: Mult iplierf or Compens at ion
S ect ion
7. 6
0000 t o 1111
IQ Sw it ch
®
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®
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Ta b l e
3
.
4
:
Us e r Se l ec ta bl e Con fi g u ra ti on Opt io n s: Ba nk 2 (0x C6H)
STREAM
TRANS
CO MM S
ND
Tar get
ATI
LP
1
LP
0
bit 7
bit 0
Bank2: bi t 7
ST RE AM:
St eami ng Met hod
S ect ion
8. 2
0 = 1
-
wire
1 = 2
-
wire (I
2
C)
Bank2: bi t 6
T RANS :
Charge Trans f er Frequenc y
S ect ion
7. 7
0 = 512k Hz
1 = 250k Hz
Bank2: bi t 5
COMM S :
St reami ng
S ect ion
8
0 = Dis abled
1 = E nabled
Bank2: bi t 4
ND:
Nois e Det ec t
S ect ion
7. 3
0 = Dis abled
1 = E nabled (1
-
wire c omms only )
Bank2: bi t 3
T arget:
A TI t arget c ounts
S ect ion
7. 8
0 = 1200
1 = 1024
Bank2: bi t 2
ATI
: A TI S elec t ion
S ect ion
7. 9
0 = Full
1 = P art ial
Bank2: bi t 1
-
0
LP
: P owermode S elect ion
S ect ion
7. 12
00 = BP , 9ms (64ms if z oom is disabled)
01 = NP, 128ms
10 = LP 1, 256ms
11 = LP 2, 512ms
Ta b l e
3
.
5
:
Us e r Se l ec ta bl e
Con fi g u ra ti on Opt io n s: Ba nk 3 (0x C7H)
~
~
~
~
Zoom
~
~
CTRL
bit 7
bit 0
Bank3: bi t 7
-
4
S ystem Use
Bank3: bi t 3
Zoom :
Zoom Dis able
S ect ion
7. 13
0 = ZoomE nabled
1 = Zoom Dis abled
Bank3: bi t 2
-
1
S ystem Use
Bank3: bi t 0
CT RL:
Cont rolI nput
S ect ion
7. 1
0 = Halt Charge
1 = Filt er Halt
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Measuri ng
C
a pacit ance
U
sing th e
Cha rge Tran sfer
M
etho d
The
char ge
t r ansf er
m ethod of capacit ive
sensing is em ployed onthe IQ S228AS/ B.
A char ge cycle is used to t ake a m easur em ent
of t he capacit ance of t he sense elect r ode
( connect ed t o Cx) r elative t o ground. It consist s
of a ser ies of pulses char ging Cx and
dischar ging
Cxt ot her eferencecapacit or , at t he
char get r ansf erf r equency( F
CX
-
r ef ert oSection
11
) . Thenum ber of t hepulsesr equir edt or each
a t r ip volt a
ge on t he refer ence capacit or is
r efer r edt oast he
Count
value( CS) whichist he
instant aneous capacit ive m easur ement . The
Counts ( CS) ar e used to det er m ine if eit her a
physical cont act or proxim it y event occurr ed,
based on t he change in CS det ect ed. The
t ypical values of CS, wit hout a t ouch or
proxim it y condit ion r ange bet ween 1344 and
1865 counts, although higher and lower counts
can be used based on t he application
r equir ement s. With CS larger t han +/
-
1865 t he
gain of t he syst em may become t oo high
caus
ing unst eady oper ation.
The I Q S228AS/ B schedules a char ge cycle
ever y t
SA MP LE
seconds t o ensure r egular
samples f or pr ocessing of r esult s. The dur at ion
of t he char ge cycle is def ined as t
CH A RGE
and
variesaccordingt ot hecountsr equir edt or each
t he tr ip
volt age. Following t he char ge cycle
other activit ies such as dat a st r eam ing is
completed ( if in str eam ing m ode) , bef ore t he
next char gecycle is init iat ed.
Pl easenot e: A tt achingaprobet ot heCxpi n
w il l i ncrease t he capacit ance of t he sense
plat e and t h
eref ore C
S
. T his may have an
i mmediat e i nf l uence on t he Counts val ue
( decrease t
CH AR GE
) and cause a proximit y or
t ouchevent .
Af t er t
HA LT
secondst hesyst em will
adj ust t o accomm odate f or t his change. I f t he
t otal load on Cx, wit h t he probe at t ached is st ill
lowert hant hem aximumCxloadt hesyst emwill
cont inuet of unct ionnor mallyaft ert
HA LT
seconds
wit h t he probe att ached.
Fi g u re
4
.
1
:
Cha rge cy cl e s a s ca n b e s ee n on CX.
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Fi g u re
5
.
1
:
DYCAL Ope ra ti o n (Se l f Capa c iti ve Se ns in g )
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6
Operatin g Prin ciple
Figur e 5.1 is a visual r epr esent ation of t he
DYCAL f unct ionalit y. The O UT pin is used t o
indicate t he st atus of a DYCAL event ( bot h
proxim it y a
nd a t ouch event) . The DYCAL
f unct ionalit y is sum m ar ised below.
Non
-
T ouch M ode
The O UT pin is act ivated on t he successf ul
det ection of a pr oxim ity event and will r emain
activat edf ort hedur ationoft heproxim it yevent ,
per m itt ing t hat t his event is no lo
nger t han t he
f ilt er halt t im ings. The LTA will be halt ed in t his
t im e.
Assoonasat ouchcondit ionisdet ect ed( Count
values, orCS, f allbelowT
T HR
) , t hecont r ollerwill
dynamically r e
-
calibrat e it s LTA t o t he halted
LTA
T
T HR
. The I C is now in TouchM ode.
T ouch M ode
Af t er t he re
-
calibrat ion of t he LTA, it will f ollow
t he Count s ( CS) and be allowed t o t r ack slow
varying envir onm ent al changes. I f t he Counts
( CS) were t o exceed t he LTA by t he r elease
t hreshold ( REL_T
T HR
) t he tou
ch det ect ion will
st op and t he O UT pin will r etur n t o it s or iginal
st ate.
7
Configur able S ettin gs
This section descr ibes t he user conf igur able
opt ions oft heI Q S228AS/ B inm ore det ail.
User progr amm able options are selected by
conf igur ing t he O TP select ion
s. Please r ef er t o
Section
2.2. 2
f oranover viewoft heconf igur able
sett ings.
7 .1
CT RL: Ex ternal Control
T he user has t he opt ion t o cont rol some
parame
t ers of t he I Q S228AS/B f rom an
ext ernalsource. T heI Ccanbeusedindef au lt
mode (CTRL unc onn ect ed) or t he user ca n
use t he CT RL pin t o select whet her t he
mast er should halt t he charge t ransf ers (i.e.
st opoperat ion)ort ohal t LT A
f ilt ert rackingon
t he
I Q S228AS/B.
7 .1 .1
Cha rge Ha lt
I f CT RL is sampled high f or lon ger t han
T
EXT _H ALT,
t he charge co nversion cycle w ill be
halt ed, once t h e current conversion has be en
complet ed. T he devic e will rema in in t hi s
st andby mode unt il t he CT RL line is sampled
low
aga in. An aut omat ic reseed is perf ormed
direct lyaf t erCT RLisreleasedt ocompensat e
f or any enviro nment al changes w hich mi ght
have occurred d uring t h e st andby mode.
7 .1 .2
Hal t LT A
F
il te r
W hen conf igured in t his mode, CT RL can be
used t o cont rol t he LT A halt t i
mes when
sampledhig h. T heCT RLpinhasprecedence
over t he conf ig urat io ns bit s select ed f or t h e
halt t imings.
I f CTRL is sam pled high f or longer t han
T
E X T _HA LT
, t he f ilt er will be halt ed unt il t his pin is
sampled low.
.
Fi g u re
7
.
1
:
Ma s te r Out p u t s ig na l o n CTRL p in t o Ha l t Op era tio n o r Fi l te r Ha l t
7 .1 .3
P uls e on CT RL:
T he pulse on t he CT RL pin needs t o adher e
t o t he f ollowing t imin g const r
aint s:
25ms < T
PULSE
< 35ms
7.1. 3. 1
I Q S228A S/ B: Reseed
A reseed co ndit io n can be init iat e d by
generat i ngap ulseo nt heCT RLpin. T heLT A
will b e reset t o t he coun t , f orcing t he O UT pin
t o it s original st at e.
I f t he count value is out side it s allow abl e
limits, t he device will f orce an AT I event t o
reset t he syst em sensitivit y. (Please ref er t o
sect ion
8. 1
f or more det ail).
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7.1. 3. 2
I Q S228A S/ B: re
-
AT I
Ar e
-
ATIcondit ioncanbeinit iatedbygener at ing
a pulse on t he CTRL pin. This f unct ion can be
issued at anyt im e.
Fi g u re
7
.
2
:
Ma s te r Out p u t s ig na l o n CTRL t o fo rce a Res e ed Con d i ti o n
.
7 .2
LOG IC
Thelogicusedbyt hedevicecanbeselectedas
active HIG H or act ive LOW. The out put pins
O UT and CTRL will f unct ion based on t his
selec
t ion. When conf igured as Act ive High, t he
out put swillr emainhighaft er PO Runt ilATIhas
completed. The ATI t im e will vary accor ding t o
t he capacit ive load on t he sensor, but t ypically
does not exceed 500ms.
Co n f igu ratio n :
Bank0
b it 5 : Lo g icO u t p u t
Sele ctio n
Bi t
Select i on
0
Soft ware O pen Dr ain Active Low
1
Act ive High
Asoft war eopendrainout put isim plement edf or
t he O UT pin when configured in active low
m ode. The volt age on t he pull
-
up r esist or is
lim it ed t o t he
I Q S228AS/ B supply volt age. A
4k7
-
is
r ecomm ended.
7 .3
RF Nois e on I QS 2 28 AS/ B
7 .3 .1
ND: RF Nois e De tec tion
The IQ S228AS/ B has RF Noise Detect ( ND)
f unct ionalit y. I f ND f unct ion is enabled, t he
I Q S228AS/ B is able t o detect RF Noise
on t he
TOUT/ ND pin. Furt her details on t he wor king of
t his can be f ound in the Application Not es:
AZD015 and AZD015b.
Note: ND input enable is a legacy input and is
not r ecomm ended f or use in new designs. The
input has been desensitized by def ault and
is
not t estedt otr iggerataspecif icRFinputpower
level
7 .3 .2
IQ S 2 28 AS/ B RF Noise I mmunity
TheI Q S228AS/ Bhasadvancedim m unit yt oRF
noisesour cessuchasGSM cellulart elephones,
DECT, Bluet oot h and WI FI devices. Design
guidelines should however be f ollowe
d t o
ensure t he best noise im m unity. The design of
capacit ivesensingapplicationscanencom pass
alarger angeof sit uat ionsbut asasum m ar yt he
f ollowing should be not ed t o im prove a design:
>
Aground pla nesh oul db eplac edu ndert h e
I C, except under t he
Cx line.
>
All t he t racks on t he PCB must be kept as
short as possible.
>
T he capacit or bet we en VDDHI and G ND
as well as bet ween VR EG and G ND, must
be place d as close as p ossible t o t he I C.
>
A 100 pF capacit or should be place d in
parall el wit h t he 1uF capacit o
r bet wee n
VDDHI andVSS.Anot her100pF capacit or
can be p laced in par allel wit h t he 1 uF
capacit or bet we en VRE G and G ND.
>
I f t he device is t oo sensit ive f or a specif ic
orderopt ion,
aparas it iccapacit or(
t ypicall y
20pF ) can be added b et ween t he Cx line
and
grou nd.
>
Proper sense elect rod e and but t on desig n
princip les must be f ollo wed.
>
Unint ent i onal co upl ing of sense elect rod e
t o ground an d ot her circuit ry must be
limited by increasin g t he dist ance t o t hese
sources.
I n som e inst ances a ground plane som e
dist an
ce fr om t he device and sense electr ode
m ay provide signif icant shielding f r om
undesir ed inter f er ence.
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When t he capacit ance bet ween t he sense
electr ode and ground becom es t oo lar ge the
sensit ivit y of t he devicem ay be influenced.
7 .4
P rox imi ty
T hre s hold
T he
I Q S228AS/ B
has 4 proximity t hreshol d
set t ings indicat e d in c ount s. T he proximity
t hresholdisselect edbyt hedesignert oobt ain
t he desired sensit ivit y and noise immunit y. A
proximityevent ist rigge redif t heCount s(CS)
diverges more t han
t h e select ed t hreshol d
f rom t he LT Af or 6 consecut ive cycles.
Conf i gurat i on:
Bank0
bi t 1
-
0
P
T HR 1
:P
T HR 0
: Proximi t yThresholds
Bi t
Select i on
00
4
01
2
( M ost sensit ive)
10
8
11
16
( Least sensit ive)
7 .5
T ouchT hre s hold
T he
I Q S228AS/B has 8 t ouch t hreshol d
set t ings indicat ed i n count s. T he t ouch
t hresholdisselect edbyt hedesignert oobt ain
t he desired t ouch se nsit ivit y. A t ouch event is
t riggered if t he Count s (CS) diverges more
t han t he select ed t hres hold f rom t he LT A f or
2 consecut ive cycles
.
I nt heNO
-
T O UCHst at et heCount s(CS)must
diverge mor e t han t he t ouch t hresho ld val ue
below
t he LT A. O perat ing in t he T O UCH
ST AT E, t he CS must diverge more t han
REL_T
T HR
of t he t ouch threshol d valu e
abov e
t he LT A
.
The f ollowing equ
ation is used t o det erm ine if a
t ouch or r elease event occurr ed.
NO TO UCH STATE:
LTA
CS<=
T
T HR
TOUCH STATE:
CS
-
LTA
>=
REL_T
T HR
Conf i gurat i on:
Bank0
bi t 4
-
2T
T HR 2
:T
T HR 0
T ouchT hreshol ds
T
T HR 2
:T
T HR 0
:
Touch Thr esholds
Bi t
Select i on
000
72/ 256
001
4/256( M ost sensit ive)
010
8/256
011
24/ 256
100
48/ 256
101
96/ 256
110
128/256
111
160/256( Least sensit ive)
7 .6
Multipli e rs
Whenusingpar t ialATI,thebasevalueissetup
using t he m ult ipliers. Com pensat ion will st ill be
add
ed aut om aticallyt oreach t he t ar get.
7 .7
Cha rge T ra ns fer
The char ge t r ansf er f r equency of t he
I Q S228AS/ B is adj ustable. Changing t he
t r ansf er f r equency will aff ect sensit ivity and
r esponser ate. Two opt ions ar e available:
Conf i gurat i on:
Bank2
bi t 6
T RA NS:
Char ge Tr ansf er Frequency
Bi t
Select i on
0
512kHz
1
250kHz
7 .8
T a rge t Counts
The t arget oft he ATI algorithm can be adj ust ed
bet ween1200( def ault )and1024count s. When
less sensit ivit y is r equir ed, t he lower counts wil
l
also incr easer esponse rate:
Conf i gurat i on
:
Bank2
bi t 3
T arget :
ATI t ar get counts
Bi t
Select i on
0
1200
1
1024
7 .9
E na ble P a rtial ATI
I n some applications t he st art up t im e of t he
I Q S228AS/ B m ay be r equir ed t o be decr eased.
This is
possible by enabling par t ial ATI, if the
m ult ipliers r equir ed can be det erm ined, and t he
compensat ion alone is adequate t o account f or
envir onm ent al change.
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Conf i gurat i on:
Bank2
bi t 2
AT I:
Par t ial ATI
Bi t
Select i on
0
Disabled
1
Enab
led
7 .1 0
DYCAL T URBO
I n som e applications, it m ay be r equir ed t o
im provet heent ryandexit speedofTouchM ode
by r em oving t he ent ry r eseed delay, as well as
t urning of f t he AC
-
f ilt er s. This can be done by
enabling t he DYCAL TURBO m ode.
Conf i gurat i on:
Bank1
bi t 3
T URBO:
DYCAL TURBO
Bi t
Select i on
0
Disabled
1
Enabled
Notet hatifDycalTur boisenabled,t heLTAwill
halt at t he r eseed point for t
HA LT
if Touch M ode
isent er edbef or eapr oxim it yevent isr egist ered.
7 .1 1
Filte r Ha lt
The
LTA
f ilt
er only executes while no proxim it y
events ar e det ect ed to ensure com pensat ion
only f or envir onm ent al changes. O nce a t ouch
eventisdet ect edt hef ilt erwillr esumeoper ation
and will no longer be halt ed. The halt t im ing
conf igur ation sett ings determ ine ho
w long t he
f ilt er is halt ed.
Conf i gurat i on:
Bank1
bi t 7
-
6
Bi t
Select i on
00
20 seconds
01
40 seconds
10
Never
11
3 seconds
T he presenc e of a pro ximity condit ion f or a
t ime exceeding t he halt t ime will be deemed
as a f ault st at e which w ould t rigg er a resee d
event whereaf t ert heou t put st at eont heO UT
pin wil l be reset t o it s original co ndit io n.
7. 12
Low P owe r Modes
There exist 4
LP m odes. The LP m odes will
decr ease t he sam pling fr equency of CS which
will r educe t he
power consumpt ion
of t he
device. However , t his will also increase t he
r esponset im e of t he device.
Conf i gurat i on:
Bank2
bi t 1
-
0
Bi t
Select i on
00
9.1m s ( BP) 64m s if Zoom disabled
01
128ms( Norm al Power Mode)
10
256ms
( Low PowerM ode 1)
11
512ms( Low PowerM ode 2)
7 .1 3
Zoom
The I Q S228AS/ B has t he opt ion t o disable t he
zoom f unct ion. Thism eanst hat t hesam plet im e
will st ay f ixed, even when proxim ity and t ouch
events are m ade. When t his is activat ed, boost
power m ode
will change fr om a 9m s sample
t im e, t o 64m s.
Conf i gurat i on:
Bank3
bi t 3
Zoom:
Zoom Disable
Bi t
Select i on
0
Enabled
1
Disabled
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Streami ng Mo de
F or a more complet e d escript ion of t he dat a
st reamingprot ocol, pl ea seref ert oApplicat
ion
Not e AZ D017 on t he Azot eq websit e.
T heIQ S228AS/Bhast hecapabilit yt ost ream
dat at oaMCU.T hisprovidest hedesignert he
abilit y t o obt ain t he p a ramet ers and sensor
dat a wit hin t he device in order t o aid design
int oappl icat ions. Dat as t reamingis
perf ormed
as a 1
-
wire dat a prot ocol on t he O UT pin O R
I
2
Cint erf ace.T heout put f unct ionof t hispinis
t heref orelost whent hedeviceisconf iguredi n
st reaming mode. Dat a Str eaming can be
enab led as ind icat ed be low:
Conf i gurat i on:
Bank2
bi t 5: Streami ngM ode
Bi t
Select i on
0
Disabled
1
Enabled
Figur e
8
.
1
illust rat es t he communicat io n
prot ocol f or init ialisin g and sending dat a wit h
t he 1 wire communicat i on prot ocol.
1.
Communicat i ons init i at e d by a ST ART
bit . Bit def ined as a lo w condit io n f or
T
S
T ART
.
2.
F ollowi ng t he ST ART bit , is a
synchronisat i on byt e (T
INI T
= 0xAA).
T hisbyt eisusedbyt heMCUf orclock
synchronisat i on.
3.
F ollowi ng T
I NIT
t he dat a byt es will be
sent . 8 Bytes will be sent af t er each
charge cycle.
4.
Each byt e sent wi ll be precede d by
a
ST ART bit and a ST OP bit will f oll ow
every byt e.
5.
ST O P bit indicat ed by t aking pi n 1
high. T he ST O P bit does not have a
def ined p eriod.
Fi g u re
8
.
1
:
D
e b ug : 1
-
wire strea mi n g De bu g Mo d e
.
Thef ollowingt abledef inest hebitdef init ionsf or
t he IQ S228AS/ B devices dur ing Str eam ing
M ode.
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Ta b l e
8
.
1
:
By te De fin i tio n s f o rStre a mi n g Mo de
Byt e (B)
Bit
Value
0
AA
1
7 :0
CS Hig h by te
2
1 5 :8
CS L o w b y te
3
2 3 :1 6
L TA Hig h b y te
4
3 1 :2 4
L TA L o w by te
5 Sy s
Fl a gs
39
38
37
36
35
34
33
32
~
~
Ac ti ve Hi gh
Fi l te r Ha l t
L P a c ti v e
ATI Bu sy
Noi s e Fo u nd
In Z o om
6
47
46
45
44
43
42
41
40
To u ch
Pro x im i ty
M u l ti p li e rs
M u l ti p li e rs
M u l ti p li e rs
M u l ti p li e rs
M u l ti p li e rs
M u l ti p li e rs
7
5 5 :4 8
Com p e ns a ti o n
8
6 3 :5 6
Cou n te r
8 .1
E v e nt Mode
TheIQ S228AS/ BhasEvent M odeim plem ent ed
dur ing 1
-
wir e comm unication. This allows t he
M CU t o m onit or t he PO UT pin
f or st at us
changes ( pr oxim ity or t ouch m ade or r eleased
events) instead of capt uring dat a cont inuously.
Uponast at uschange,t heIQ S228AS/ Bwillpull
t he PO UT pin f or low t o indicate t o t he M CU t o
r eaddat a.ThePO UTpinwillst aylowf or1.6m s.
8 .2
I
2
C
The I
Q S228AS/ B also allow f or I
2
C st ream ing
f ordebugging.DataSt reamingcanbechanged
f r om 1
-
wir e pr otocol t o I
2
C as shown below:
Conf i gurat i on:
Bank2
bi t 7: Streami ngM ode
Bi t
Select i on
0
1
-
Wire Pr otocol
1
I
2
C St r eam ing
The M em ory M ap f or t he IQ S228AS/ B can be
f ound in
Appendix A
.
The IQ S228AS/ B can comm unicat e on an I 2C
ll
-
upr esist or sshouldbeplacedonSDAandSCL.
The Contr ol byt e indicates t he 7
-
bit device
address ( 0x44H) and t he Read/Wr it e indicator
bit .
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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9
Auto T uning Imp le mentatio n (AT I)
ATI is a sophist icated t echnology im plement ed
in t he latest
gener ation Pr oxSense
®
devices
t hat opt im ises t he per f orm ance of t he sensor in
a wide r ange of applications and envir onm ent al
condit ions (r efer t o application not e AZD0027
-
Auto TuningI m plem ent at ion) .
ATI m akes adj ust ment s t hr ough ext ernal
r efer ence capa
cit or s unnecessar y ( as r equir ed
by m ost ot her solutions) t o obt ain opt im um
per f or m ance.
9 .1
Full AT I
The IQ S228AS/ B im plem ent s an aut om at ic ATI
algor it hm. This algor it hm aut om atically adj ust s
t he ATI par am eter s t o opt im ise t he sensing
electr odes connect ion t o
t he device.
The device will execute t he ATI algor it hm
whenever t he device st ar t s
-
up and or when t he
counts ar e not wit hin a pr edeter m inedr ange.
There are 2 im port ant def init ions t o under st and
f or ATI:
9 .2
AT IT a rge t
ATI adj usts int ernal cir cuit r y accor ding t o t wo
par amet ers, t he
ATI multi pli er
and t he
AT I
compensati on
.
>
The
ATI mul ti pli er
can be viewed as a
cour seadj ust m entoft heCounts( CS) ,used
t o achieve t he ATI BASE value.
>
The
ATIcompensat i on
isaf ineadj ust
m ent
used t o r eacht he ATI TARG ET value.
With t hese t wo par ameters t he Count s ( CS) of
t he IQ S228AS/ B is t uned unt il an ATI t ar get
value of 1200 is achieved.
9 .3
AT I
BASE
: Si gnifica nc e of AT I Bas e
Asm ent ionedabove, t he
ATImul ti pli er
isused
t o select a base
value f or t he ATI. The ATI
BASEvalueisim port ant ,asthisdet erm inest he
sensit ivit y of t he device. The sensit ivit y can be
def ined as:
Sensit ivit y = ATI TARG ET / ATI BASE
TheATITar getr emainsfixedat1200anditcan
t hus be seen f r om t his t hat a large
r base value
will r esult in a less sensit ive device. The
designer has t he opt ion t o incr ease/r educe the
sensit ivit y of t he syst em t hrough t he ATI BASE
value. For m ost applications t he ATI BASE
should be kept def ault .
The opt ions f or t he ATI BASE values are
as
f ollows:
Conf i gurat i on:
Bank1
bi t 2
-
0
Bi t
Select i on
000
200
001
50
010
75
011
100
100
150
101
250
110
300
111
500
9 .4
S e ns itivity
D
ue to ATI
Theadj ust m ent of t heATI par am et erswillr esult
in variat ions in t he count and sensit ivi
t y.
Sensit ivit y can be observed as t he change in
count as t he r esult of a
f ixed
change in sensed
capacit ance. The ATI param et ers have been
chosen t o provide signif icant over lap. I t m ay
t her ef ore be possible t o select var ious
combinat ions of ATI m ult iplier and ATI
compensat ion set t ings to obt ain t he sam e
count. Thesensit ivit yof the
variousopt ionsm ay
however be dif f er ent f or the same count .
9 .5
AT I P roc e dure
Whilet heAutom aticATIalgor it hmisinprogr ess
t his condit ion will be indicated in t he st r eam ing
dat a and pr oxim ity and touch event s cannot be
det ected. The device will only brief ly r emain in
t his condit ion and it will be ent er ed only when
r elatively lar
ge shift s in t he count has been
det ected.
The aut om atic ATI f unct ion aim s t o m aintain a
const antcount,r egar dlessoft hecapacit anceof
t hesenseelectr ode( wit hint hem axim umr ange
oft he device) .
The eff ect s of aut o
-
ATI on t he application ar e
t hef ollo
wing:
>
Aut omat ic adj ust ment of t he devic e
conf igurat io n and processing paramet er s
f or a wide range of P CB and app licat io n
designst omaint ai naopt imalconf igurat i o n
f or proximity and t ouch det ect ion.
>
Aut omat ic t uning of t he sense elect rod e at
st art
-
up t o o
pt imise t he sensit ivit y of t he
applic at ion.
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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>
Aut omat ic re
-
t uning when t he devic e
det ect s changes in t he sensing elect rod es
capacit ance t o acco mmodat e a large
rangeof chang esint heenvironme nt of t he
applic at ion t h at inf lue nces t he sensi n g
elect rode.
>
Re
-
tu
nin g on ly occur s during devic e
operat io nwhenarelat iv elylargesensit iv it y
reduct ion is det ect ed. T his is t o ensure
smoot h operat ion of the device durin g
operat io n.
>
Re
-
t unin g may t emporarily inf lue nces t he
normal f unct ioni ng of the device, but in
most in
st ances t he ef fect will be hardly
not iceab le.
>
Short lyaf t ert hecompletionof t here
-
t unin g
process t he sens it ivit y of a Proximity
det ect ionmaybereduc edslight lyf oraf ew
seconds as int erna l f ilt e rs st abilises.
Autom at ic ATI can be im plement ed so
eff ec
t ively duet o:
>
Excellent syst em signal t o noise rat i o
(SNR).
>
Eff ect ive digit al sign al processing t o
remove AC and ot her n oise.
>
T he very st able core of t he devices.
>
T he built
-
in ca pab ilit y t o accommodat e a
large ran ge of sensing e lect rod e
capacit ances.
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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10
DYCAL Specifi c set tings
1 0 .1
Rel e as e T hres hold
TheIQ S228AS/ Bhast heopt iont oincreaset hereleaset hresholdwheninTM. Thishelpst hatsm all
variat ions caused by m oving a f inger/ hand on a touch pad will not cause the I C t o exit TM
, m aking
t he solution m or er obust . The opt ions available are shown below:
Conf i gurat i on:
Bank0
bi t 6
Bi t
Select i on
0
75% of Ent r y Delt a
1
87. 5% of Entr y Delt a
Af t er ent er ing TM, as soon as t he LTA f ollows t o wit hin 16 counts, a Ent r y Delt a value is calculated
as:
>
Entr y Delt a=LTA
entry
-
LTA
cur re nt
This calculated Entr y Delt a value is used f or t he Release Threshold as shown above.
I f upon entr y, t he LTA value is
alr eady wit hin 16 Counts, t he Ent r y Delt a is t aken as t he calculated
t oucht hreshold value.
1 0 .2
Input E na ble
TheIQ S228AS/ Bcanbeconf igur edt ohavet heCTRLpinf unct ionasanout putonaPr oxim it yevent.
Choosing t he CTRL pin as out put r emoves t he Filt er Ha
lt and Halt Char ge opt ions of t he pin as an
input.
Using a t ouch event t o act ivate O UT will m ake t he syst em less sensit ive which is needed in some
applications. The LTA will st ill halt wit h t he det ect ion of a pr oxim it y but will not have an
inf luence on
t heO UT pin. The LTA will st ill r e
-
calibrat e once at ouch condit ion is det ected.
Conf i gurat i on:
Bank0
bi t 7
Bi t
Select i on
0
O utput
1
I nput
IQ Sw it ch
®
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®
S eri es
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11
Electric al Sp ecific a tions
1 1 .1
Abs olute Ma x imum
Spe c ifica tions
Exceeding t hesemaximum specif i cat i ons may cause damaget ot hedevice
.
O per at ing t em per atur e
:
I Q S228AS
-
20°Ct o 85°C
I Q S228B
-
4
0°Ct o 85°C
Supply Volt age ( V
DDHI
V
SS
)
3.6V
M axim um pinvolt age(OUT, CTRL)
V
DDHI
+ 0.
3
V
Pin
volt age ( Cx)
1.7V
M inim um pin volt age ( VDDHI , VREG, O UT, CTRL, Cx)
V
SS
-
0.
3
V
M inim um power
-
on slope
100V/ s
ESD prot ect ion ( VDDHI, VREG , V
SS
, O UT, CTRL, Cx)
8kV
1 1 .2
Ge ne ral Cha rac teri s tic s
I Q S228AS/ B devices ar e r at edf or supply volt ages bet ween 1.8V and 3
. 6V.
Ta b l e
11
.
1
:
IQS2 28 AS/B Gene ra l Ope ra ti ng Co nd i tio n s
DES CRIPT IO N
Co n d it ion s
PARA MET ER
MIN
T YP
MAX
UNIT
Su p p ly vo l tag e
V
DDHI
1.
8
3 .3
3 .6
V
In te rn al reg u l ato r ou tp ut
DDHI
V
REG
1 .6 4
1 .7
1.
75
V
Bo o s t Po wer o pe ra ti n g c u rren t
DDHI
I
IQ S2 2 8 AS/B_ BP
120
129
135
˛
A
Norm a l Po wer op e ra ti n g c u rren t
DDHI
I
IQ S2 2 8 AS/B_ NP
4 .9
6 .4 5
8 .1
˛
A
L o w p o wer1 o pe ra ti n g c u rren t
DDHI
I
IQ S2 2 8 AS/B
L P1
2 .9 5
3 .8
4 .8 5
˛
A
L o w
p o wer2 o pe ra ti n g c u rren t
DDHI
I
IQ S2 2 8 AS/B_ L P2
1 .8 8
<2 .5
1
3 .2
˛
A
C
x
p i n c a p ac i ta n ce
DDHI
C
C
xL o a d
120
pF
Char ge Transf er Tim ings f or low powerm ode isf ound in
Section
7.12
.
Ta b l e
11
.
2
:
Sta rt
-
u p a n d s h u t
-
d o wn sl o pe Ch a rac te ri s ti cs
DES CRIPT IO N
Co n d it ion s
PARA MET ER
MIN
MAX
UNIT
POR
V
DDHI
Sl o p e
1 0 0 V/s
POR
0 .3
2
1.
7
V
VDDHI
re s e tl e ve l
V
DDHI
Sl o p e
1 0 0 V/s
RESET
VDDHI
N/A
1 .7
V
VREG
re s e t le v el
V
DDHI
Sl o p e
1 0 0 V/s
RESET
VREG
N/A
1 .5 8
3
V
1
Al l l ow p ower c urr en t v al ue s aris e fr om
c h arac teriz a tio n do ne fro m (
-
) 35°C to ( + ) 8 5°C a t 3. 3V.
2
F or a p ower c y c le,e ns ure lower ing VDD HI b el ow th e min im um v a lue bef ore r a m pin g VD DHI pas t th e
max im um PO R v a lue
3
F igur e
2
.
4
Cap ac itors C 1 & C3 s h ou ld be c hos e n to c omp ly wit h th is s pec if ic at io n
IQ Sw it ch
®
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®
S eri es
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1 1 .3
Output Cha ra c teri s tics
1
Ta b l e
11
.
3
:
TOUT Cha ra c te ri sti c s
Symb o l
Desc ript ion
V
OH
Co n d it ion s
MIN
T YP
MAX
UNIT
I
S OURC E
O utput High
volt age
0.9* VDDHI
V
DDHI
= 3.6V
~
~
TBD
mA
0.9* VDDHI
V
DDHI
= 3.3V
~
10
~
0.9* VDDHI
V
DDHI
= 1.8V
TBD
~
~
Symb o l
Desc ript ion
V
OL
Co n d it ion s
MIN
T YP
MAX
UNIT
I
S INK
O utput Low
volt age
100mV
V
DDHI
= 3.6V
TBD
mA
100mV
V
DDHI
= 3.3V
10
100mV
V
DDHI
= 1.8V
TBD
Ta b l e
11
.
4
:
POUT Ch a rac te ri sti c s
Symb o l
Desc ript ion
V
OH
Co n d it ion s
MIN
T YP
MAX
UNIT
I
S OURC E
O utput High
volt age
0.9* VDDHI
V
DDHI
= 3.6V
~
~
TBD
mA
0.9* VDDHI
V
DDHI
= 3.3V
~
10
~
0.9* VDDHI
V
DDHI
= 1.8V
TBD
~
~
Symb o l
Desc ript ion
V
OL
Co n d it ion s
MIN
T YP
MAX
UNI T
I
S INK
O utput Low
volt age
0.1V
V
DDHI
= 3.6V
TBD
mA
0.1V
V
DDHI
= 3.3V
10
0.1V
V
DDHI
= 1.8V
TBD
Ta b l e
11
.
5
:
Comb i ne d Cha ra cte ri s ti cs
Symb o l
Desc ript ion
V
OH
Co n d it ion s
MIN
T YP
MAX
UNIT
I
S OURC E
O utput High
volt age
0.9* VDDHI
V
DDHI
= 3.6V
~
~
TBD
mA
0.9* VDDHI
V
DDHI
= 3.3V
~
17
~
0.9* VDDHI
V
DDHI
= 1.8V
TBD
~
~
Symb o l
Desc ript ion
V
OL
Co n d it ion s
MIN
T YP
MAX
UNI T
I
S INK
O utput Low
volt age
0.1V
V
DDHI
= 3.6V
TBD
mA
0.V
V
DDHI
= 3.3V
20
0.1V
V
DDHI
= 1.8V
TBD
1
I/ O sink capabilit ies only in Act ive Low conf igur ation. I /O sour ce capabilit ies only in Act ive High
conf igur ation.
IQ Sw it ch
®
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®
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1 1 .4
P a c ka ging I nforma tion
1 1 .4.1
T S OT2 3
-
6
Fi g u re
11
.
1
:
TSOT2 3
-
6 Pac k ag i n g
1
Ta b l e
11
.
6
:
TSOT2 3
-
6 Di me nsi o n s
Dimen sion
Min ( mm )
Max (m m)
A
2 .6 0
3 .0 0
B
1 .5 0
1 .7 0
C
2 .8 0
3 .0 0
D
0 .3 0
0 .5 0
E
0 .9 5 Bas ic
F
0 .8 4
1 .0 0
G
0 .0 0
0 .1 0
H
0 .3 0
0 .5 0
I
0°
8°
J
0 .0 3
0 .2 0
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®
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1 1 .4.2
WLCS P
-
8
Fi g u re
11
.
2
IQS2 2 8 B W L CSP
-
8 Di me n si o ns (i n mm)
Top view
Bott om view
Side
view
P i n 1
m
arki ng
IQ Sw it ch
®
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®
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1 1 .4.3
DFN
-
6
DFN
-
6 Packaging
DFN
-
6 Dim ensions
Dimen sion
Min
Max
A
3 .0 0m m
3 .0 0m m
B
2 .5 0m m
2 .5 0m m
C
0 .3 0m m
0 .3 0m m
D
0 .3 5m m
0 .3 5m m
E
1 .3 0m m
1 .3 0m m
F
2 .2 0m m
2 .2 0m m
G
0 .0 5m m
0 .0 5m m
H
0 .7 5m m
0 .7 5m m
I
0 .8 0m m
0 .8 0m m
IQ Sw it ch
®
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1 1 .4.4
MS L Le v e l
M oist ure Sensi ti vit y Level
(M SL) r elates t o t he packaging and handling precautions f or some
semiconductor s. TheM SLisanelectr onicst andardf ort het im eper iodinwhicham oist ur esensit ive
device can be exposed to ambient r oom condit ions ( appr oxim at ely 30°C/85%RH see J
-
STD033C
f
or m or e inf o) bef ore r ef low occur.
Pac kag e
L evel( d u r atio n )
TSOT2 3
-
6
Ref l o w p rofi le p ea k te mp e ra tu re < 2 60 °C f o r< 3 0 s ec o nd s
WL CSP
-
8
Non
-
e n ca ps u l ate d d e vi ce
not m o is tu re se n si tiv e
Ref l o w p rofi le p ea k
te mp e ra tu re < 2 60 °C f o r< 3 0 s ec o nd s
DFN
-
6
Ref l o w p rofi le p ea k te mp e ra tu re < 2 60 °C f o r< 3 0 s ec o nd s
IQ Sw it ch
®
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Datash eet an d Part
-
number I nform ation
1 2 .1
Orde ring Informa tion
O r der swillbesubj ectt oaMO Q(M inim umO r der Q uantity) of af ullr eel. Contactt heoff icialdist r ibut or
www. azot eq. co
m
.
For large order s, Azoteqcan provide pre
-
conf igured devices.
ThePart
-
num ber canbegener atedbyusingUSBPr og. exeor t heI nt eract ivePart Num ber gener ator
on t he websit e.
I C NAM E
I Q S228AS
=
I Q S228 Self Capacit ive
I Q S228B
=
I Q S228 Self
Capacit ive
CO NFIG URATIO N
zzz zzz zz
=
I C Conf igur at ion( hexadecim al)
PACKAG E TYPE
TS
=
TSO T23
-
6 package
C
S
=
WLCSP
-
8 package
DN
=
DFN
-
6 package
BULK PACKAG I NG
R
=
Reel
TSO T23
-
6 andWLCSP
-
8:
3000pcs/ r eel
DFN
-
6: 6000pcs/r eel
=
M OQ = 1r eel
( or der s shipped asf ull r eels)
IQ Sw it ch
®
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®
S eri es
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1 2 .2
Dev ice Ma rk ing
T op
1 2 .2.1
T S OT2 3
-
6 P a ck a ge Ma rk ings
There ar e 2 m ar king versions in circulation f or I QS228AS
and IQ S228B
:
Fi g u re
12
.
1
:
Fi rs t Ma rki n g Va ria n t o fIQS2 2 8 AS
Fi g u re
12
.
2
:
Sec o nd Ma rk in g Va ri a n t o f IQS2 28 AS
Fi g u re
12
.
3
:
Fi rs t Ma rk i n g Va ria n t o fIQS2 2 8
B
Fi g u re
12
.
4
:
Sec o nd Ma rk in g Va ri a n t o f IQS2 28 B
I C NAM E
228A
=
I Q S228AS Self Capacit ive
22
-
A
=
I Q S228AS Self Capacit ive
228B
=
I Q S228B Self Capacit ive
22
-
B
=
I Q S228B Self Capacit ive
Batch Code
xx
=
AA
t o ZZ
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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21
I QS22
8
AS /B Dat as heet
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1 2 .2.2
WLCS P
-
8 P a ck a ge Ma rk ings
Fi g u re
12
.
5
To p Ma rk in g o f I QS2 2 8 B W L CSP Pa ck a g e
I C NAM E
228B
=
I Q S228B Self Capacit ive
Batch Code
xx
=
AA
ZZ
I C VERSI O N
V
Product Code
PPP
1 2 .2.3
DFN
-
6 P a c ka ge
Ma rk ings
Fi g u re
12
.
6
IQS2 2 8 B
DFN
-
6 Pa c ka g e To p Ma rk i n g
I C NAM E
22
-
B
=
I Q S228B Self Capacit ive
Batch Code
xx
=
AA t o ZZ
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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21
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1 2 .3
T a pe
a nd Ree l
S pe c ific a tion
Fi g u re
12
.
7
: TSOT2 3
-
6 T ap e Sp e c ifi ca ti on .
Ta b l e
12
.
1
Ta pe a nd Re el Di me n s io n s
Dev ic e
P ack age
Ty pe
P ack age
D ra wi ng
P ins
QTY
per
reel
Reel
Di a m ete r
(mm )
Reel
Wi dth
W1 (mm )
A0
(mm )
B0
(mm )
K0
(mm )
P1
(mm )
W
(mm )
P in1
Quadrant
I QS2
2
8
AS
z zzz zzz zTS R
TS OT23/ 6
TS OT23
-
6
6
3000
17 8
9. 5
3. 1
3. 1
1. 3
4
8
Q
3
I QS22
8
Bzz zzz zzz TS R
TS OT23/ 6
TS OT23
-
6
6
3
000
17 8
9. 5
3. 1
3. 1
1. 3
4
8
Q
3
I QS22
8
Bzz zzz zzz CS R
WLCS P 8
WLCS P
-
8
8
3000
17 9
8. 4
1
1 . 5 5
0. 48
4
8
Q3
I QS228Bzz zzz zzz DNR
DFN6
DFN
-
6
6
6000
330
12. 4
2. 8
3. 3
1. 2
4
12
Q1
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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Appendi x A.
Memory Map
Device Inform ation
[ 00H] PRO D_NR
The pr oduct num berf or the IQ S228A is 39 ( decimal) .
[ 01H] SW_NR
Thesof t war eversionnum beroft hedeviceRO Mcanber eadint hisbyte.Thelatestsof t wareversion
is 29 ( decim al) .
[ 10H] SYSFLA G S0
Bit 7
-
6:
SYSTEM _USE
Bit 5:
Logic:
LogicO utput I ndication
0 = Act ive Low
1 = Act ive High
Bit 4:
Halt :
I ndicat es Filt er Halt st at us
0 = LTA not being Halt ed
1 = LTA Halt ed
Bit 3:
LP:
Low PowerM ode
0 = Samplet im e BP
1 = Samplet im e LP
Bit 2:
ATI:
St atus of aut omat ed ATI r out ine
00H
Pro d u ct Nu mb e r ( P RO D_ NR)
Bit
7
6
5
4
3
2
1
0
Access
Value
39 ( Decim al)
R
Note
01H
So f t w are Num b er ( S W_ N R)
Bit
7
6
5
4
3
2
1
0
Access
Value
29 ( Decim al)
R
Note
10H
Syst em Flag s (
Sy s_F lag s )
Bit
7
6
5
4
3
2
1
0
Access
Value
~
Logic
Halt
LP
ATI
ND
Zoom
R
Note
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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0 = ATI is not busy
1 = ATI in progr ess
Bit 1:
ND:
This bit indicatest he pr esence of noise int erf erence.
0 = I C has not det ectedthe presence of noise
1 = I C has det ected t hepresence of noise
Bit 0:
ZOOM :
Zoom will indicate f ull
-
speed char ging once an undebounced proxim it y is
det ected. I n BP m ode, t his
will not changet he charging fr equency.
0 = I C not zoom ed in
1 = I C det ect ed undebounced pr oxim it y andI C ischar ging at f ull
-
speed ( BP)
[ 31H] St atus
Bit 7:
Dycal:
Dycal Detect ion
0 = Not Act ive
1 = Act ive
Bit 6:2:
SYSTEM _USE
Bit 1:
Touch:
Touch Detect ion
0 = Not Act ive
1 = Act ive
Bit 0:
Prox:
Pr oxim it y Detect ion
0 = Not Act ive
1 = Act ive
31H
St atu s
Bit
7
6
5
4
3
2
1
0
Access
Value
DYCAL
Touch
Pr oxim it y
R
Note
42H
Co u n t s_Hig h ( CS _H)
Bit
7
6
5
4
3
2
1
0
Access
Value
Counts High Byt e
R
Note
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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43H
Co u n t s_L o w ( CS_L)
Bit
7
6
5
4
3
2
1
0
Access
Value
Counts Low Byt e
R
Note
83H
L T A_High ( L T A_H)
Bit
7
6
5
4
3
2
1
0
Access
Value
Long Term Aver age High Byt e
R
Note
84H
L T A_Lo w ( L T A_L)
Bit
7
6
5
4
3
2
1
0
Access
Value
Long Term Aver age Low Byt e
R
Note
C4H
F u se Bank 0( F B_ 0)
Bit
7
6
5
4
3
2
1
0
Access
Value
See
Table
3
.
1
f or m ore details
R
Note
C5H
F u se Bank 1( F B_ 1)
Bit
7
6
5
4
3
2
1
0
Access
Value
See
Table
3
.
2
f or m ore details
R
Note
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
21
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[ C8H]
Defaul t CommsPoint er
Thevaluest or edint hisregist erwillbeloadedintot heCom msPointer at t hest ar tofacom m unicat ion
window. For example, if t he design only r equir es t he Pr oxim it y St at us inf or m at ion each cycle, t hen
t he
DefaultCom m sPointer
. Thiswouldm eant hatatt hest ar tofeach
comm unicat ion window, t he comm s pointer would alr eady be set t o t he Pr oxim it y St at us r egist er,
sim ply allowing a READ t or etr ieve t he dat a, wit hout t he need of set t ing up t he address.
C6H
F u se Bank 2( F B_ 2)
Bit
7
6
5
4
3
2
1
0
Access
Value
See
Table
3
.
4
f or m ore details
R
Note
C7H
F u se Bank 3( F B_ 3)
Bit
7
6
5
4
3
2
1
0
Access
Value
See
Table
3
.
5
f or m ore details
R
Note
C8H
DEF AUL T _CO MM S_ PO IN T ER
Bit
7
6
5
4
3
2
1
0
Access
Value
( Beginning of Device Specif ic Data)
R/ W
Default
10H
IQ Sw it ch
®
Pro x Sens e
®
S eri es
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Appen dix B.
Errata
Filte r
H
a lt
T
ime s
W
bit isset, t hehalt t im esasspecif iedinSection
3
willbescaled16xlonger,
due t o added dead t im ewhen t heI C
cor e is t ur ned off t or educe power consum ption:
Us er Se lec tab le Conf ig urati on O pt ions : Ba nk 1
F ul l A T I (
0x C5H
)
t
HA LT 1
t
HA LT 0
~
~
TURBO
BASE
2
BASE
1
BASE
0
bit 7
bit 0
Bank1: bi t 7
-
6
t
HAL T
:
Halt tim es
S ect ion
7. 11
00 = 320s ec onds
01 = 640s ec onds
10 = Nev er
11 = 48s ec onds
IQ Sw it ch
®
Pro x Sens e
®
S eri es
Copy right ©Az ot eq (P ty ) Lt d 20
21
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8
AS /B Dat as heet
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Appendi x C.
Contact I nform atio n
V
isit
www. azot eq. com
f or a list of
dist r ibut ors and worldwide r epr esent at ion.
USA
A sia
Sout hA f ri ca
Physical
A ddress
11940 Jollyville
Suit e 120
-
S
Austin
TX 78750
USA
Room
501A,
Block
A,
T
-
Shar e
I nter nat ional
Centr e,
Taoyuan
Road,
Nanshan
Dist r ict,
Shenzhen,
G uangdong,
PRC
1 Bergsig Avenue
Paar l
7646
Sout h Afr ica
Post al
A ddress
11940 Jollyville
Suit e 120
-
S
Austin
TX 78750
USA
Room
501A,
Block
A,
T
-
Shar e
I nter nat ional
Centr e,
Taoyuan
Road,
Nanshan
Dist r ict,
Shenzhen,
G uangdong,
PRC
PO Box 3534
Paar l
7620
Sout h Afr ica
T el
+1 512 538 1995
+86 755 8303 5294
ext 808
+27 21 863 0033
Emai l
info@azoteq.com
info@azoteq.com
info@azoteq.com
P
ate nts
as l is ted on
www. a z oteq.c om /pat ents
-
tr ad ema r k s /
may
r elate to t he dev ic e or us ag e of the dev ic e
.
Az oteq
®
,Cr y s tal Dr iv er
,IQ Sw itc h
®
,Pr ox S ens
e
®
,Pr ox F us ion
®
log o ar e tr ade mar k s of Az o teq.
T h e in fo r m atio n in t h is Data sh e e t is b e lie ve d to b e a ccu r a te a t t h e tim e o f p ub lica tio n . Azo te q u se s r e a son a b lee ff o rt to m a
inta in th e in form a tio n up
-
to
-
d a te a n d a ccu ra te ,b u t do e s
n o twarr a n tth e a ccu r a cy,co m p le te n e sso rr e lia b ilityo fthe inf or m a tio n c
o r warr a n tie s, e xpr e ss or imp lie d , of a n y kind , inclu d ing r e pr e se n tatio n s ab o u t th e su ita b ility o f the se pr o d u cts o r inf or m a t
ion for a n y p ur po s
e . Azo teq d iscla im s a ll war r a ntie s a nd
co n d ition s with r e g ar d to th e se pr o d u cts a nd inf o r m a tio n , inclu d ing b u t no t lim ite d to a ll im plie d war r a n tie s a nd co n d ition s
o f m er ch a n ta b ility, fitn e ss fo r a p a r ticu lar p u r p o se , title
a n d n o n
-
infr ing em e n t o f a n y th i
r d pa r ty int e llectu a l p r o p er ty r igh ts. Azo te q a ssum e s n o lia b ility fo r a n y d a m a g e s o r injur y a r isin g fr om a n y u se o f th e inf o
r m a tion o r th e p r od u ct o r
ca u se d b y, with o u t lim ita tio n , fa ilu r e o f pe r form a n ce , e r r or , om issio n , inte r ru p tio n , d e fe ct, de lay in o p
e r a tio n o r tr a n sm issio n , e ve n if Azo te q h a s b e e n a d vised o f th e p o ssibility of
su ch d a m a ge s. T h e ap p lica tio n s m en tio n e d he r e in a r e u se d so lely fo r the p u r po se o f illustr a tio n a n d Azo teq m a ke s n o war r a n ty
o r r e pre se n ta tio n tha t su ch a p p lica tio n s will b e
su i
ta b le with o u t fur th er m o d ificatio n , n or r e com m e n d s th e u se o f its pr o d u ctsfo r a pp lica tio n t h a t m a y pr e se n t a r isk to h um a n l
ife d ue t o m a lfu n ctio n or o th er wise . Azo te q pr o d u cts
a r e n o t au th o r ized fo r u se a s cr itical com p o ne n ts in life su p p or t d e vices or s
yste m s. No lice n se s to p a te n ts a re g r a nte d , im p licitly, e xp re ss o r im p lie d , b y e sto p pe l o r o the r wise,
u n d e r a n y inte lle ctu a l p r o pe r ty r igh ts. In th e e ve n t tha t a n y o f th e a b o vem e n tio n ed lim ita tio n s o r e xclusio n s d o e s n o t a p p ly
to ta l lia b ility fo r a ll losse s,
d a m a g e s an d ca u se s o f a ction ( in co n tr a ct, to r t ( inclu d ing witho u t lim ita tio n , ne g lig e n ce) or o th e r wise) will n o t e xce e d th e
am o u n t a lre ad y p a id b y th e cu sto me r fo r th e p r od u cts.
Azo te q r e se r ve s the r igh t to a lter its p r o d u
cts, to m a ke co r r e ctio n s, d e let ion s, m o d ificat ion s, e n h a n ce m en ts, im p ro ve m en ts a n d o th er ch an g e s to th e co n ten t a n d inf o rm a ti
o n, its
p r o d u cts, p ro g r am s an d ser vices a t an y time o r to m o ve or d iscon tin u e a n y co n te nts, pr o d ucts, p r og r am s or ser vices with ou t
pr ior n o tificatio n . Fo r t h e m o st u p
-
to
-
d ate info r m ation
a n d b ind ing T er m s a nd Co n d ition sp lea se r e fer t o
www.a zo teq .co m
.
i nfo@azoteq. com
| Weight | Not Found |
" \nIQ Sw it ch\n®\n \nPro x Sens e\n®\n \nS eri es\n \n \n \nCopy right ©Az ot eq (P ty ) Lt d(...TRUNCATED) | Units | unit y |
" \nIQ Sw it ch\n®\n \nPro x Sens e\n®\n \nS eri es\n \n \n \nCopy right ©Az ot eq (P ty ) Lt d(...TRUNCATED) | Name | IQS2 |
" \nIQ Sw it ch\n®\n \nPro x Sens e\n®\n \nS eri es\n \n \n \nCopy right ©Az ot eq (P ty ) Lt d(...TRUNCATED) | Description about the component | op ti on a l for a d d ed RF i mmu n i ty . |
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