source stringclasses 1 value | lang stringclasses 1 value | entry_type stringclasses 1 value | doi_prefix stringclasses 15 values | csl_style stringclasses 17 values | content stringlengths 95 1.87k |
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crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Magarino, J., Friederich, A., Kaplan, D., & Deneuville, A.</author> <year>(1981).</year> <title>EFFECT OF HYDROGENATION ON DOPED a-Si PREPARED BY CVD.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–737.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Matsuda, A., Matsumura, M., Nakagawa, K., Yamasaki, S., & Tanaka, K.</author> <year>(1981).</year> <title>A SIMPLIFIED MODEL FOR THE DEPOSITION KINETICS OF GD a-Si : H FILMS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–687.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Matsumura, M., Kuno, S. I., & Uchida, Y.</author> <year>(1981).</year> <title>CURRENT PATH IN AMORPHOUS-SILICON FIELD EFFECT TRANSISTORS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–519.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Mirza, A. R., Rhodes, A. J., Allison, J., & Thompson, M. J.</author> <year>(1981).</year> <title>R.F. MAGNETRON SPUTTERING OF a-Si : H.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–659.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Monroe, D., Orenstein, J., & Kastner, M.</author> <year>(1981).</year> <title>DENSITY OF STATES IN THE GAP OF a-As2Se3BY PHOTOCURRENT TRANSIENT SPECTROSCOPY.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–559.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Movaghar, B.</author> <year>(1981).</year> <title>THE THEORY OF TRANSPORT IN AMORPHOUS SEMICONDUCTORS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–73.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Nakamura, G., Sato, K., Kondo, H., Yukimoto, Y., & Shirahata, K.</author> <year>(1981).</year> <title>TANDEM TYPE SOLAR CELLS USING a-Si : H AND a-SiGe : H FILMS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–483.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Navkhandewala, R. V., Narasimhan, K. L., & Guha, S.</author> <year>(1981).</year> <title>ELECTRON IRRADIATION IN AMORPHOUS HYDROGENATED SILICON.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–803.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Nonomura, S., Okamoto, H., Nishino, T., & Hamakawa, Y.</author> <year>(1981).</year> <title>ELECTROREFLECTANCE STUDY OF ELECTRONIC STRUCTURE IN a-Si : H.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–761.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Oguz, S., Paul, D. K., Blake, J., … Paul, W.</author> <year>(1981).</year> <title>INFERIOR ELECTRONIC PROPERTIES OF RF-SPUTTERED a-Si : H FILMS WITH ONLY THE 2000-cm-1IR ABSORPTION BAND.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–679.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Okamoto, H., Yamaguchi, T., Nonomura, S., & Hamakawa, Y.</author> <year>(1981).</year> <title>DRIFT TYPE PHOTOVOLTAIC EFFECT IN a-Si p-i-n JUNCTION.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–507.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Okuda, M., Naito, H., Nakayama, H., & Nakau, T.</author> <year>(1981).</year> <title>OPTICAL DLTS MEASUREMENTS OF LOCALIZED STATES IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–601.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Okushi, H., Tokumaru, Y., Yamasaki, S., Oheda, H., & Tanaka, K.</author> <year>(1981).</year> <title>ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY : ITS APPLICATION TO THE STUDY OF GAP STATES OF a-Si:H.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–613.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Pepper, M.</author> <year>(1981).</year> <title>TWO DIMENSIONAL ELECTRON LOCALIZATION.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–17.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Persans, P. D., & Fritzsche, H.</author> <year>(1981).</year> <title>DUAL LIGHT BEAM MODULATION OF PHOTOCARRIER LIFETIME IN INTRINSIC a-Si:H.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–597.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Pichard, J. L., & Sarma, G.</author> <year>(1981).</year> <title>FINITE SIZE SCALING APPROACH TO ANDERSON LOCALIZATION.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–37.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Pickett, W. E., Papaconstantopoulos, D. A., & Economou, E. N.</author> <year>(1981).</year> <title>CALCULATIONS OF TRANSPORT PROPERTIES IN a-Si : H.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–769.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Ray, S., Vardeny, Z., & Tauc, J.</author> <year>(1981).</year> <title>TIME RESOLVED SPECTROSCOPY OF THE PHOTOINDUCED ABSORPTION IN GLOW-DISCHARGE a-Si:H.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–555.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Reimer, J. A.</author> <year>(1981).</year> <title>NMR INVESTIGATIONS OF HYDROGENATED AMORPHOUS SILICON.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–715.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Robertson, J.</author> <year>(1981).</year> <title>THEORY OF DOPANT LEVEL DEPTHS IN a-Si.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–745.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Sawan, Y., El-Gabaly, M., Wakim, F., & Atari, S.</author> <year>(1981).</year> <title>A STUDY OF A NEW HETEROJUNCTION MADE OF n-TYPE SILICON AND p-TYPE AMORPHOUS SEMICONDUCTOR.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–511.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Scher, H.</author> <year>(1981).</year> <title>RECOMBINATION IN DISORDERED SOLIDS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–547.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Scott, B. A., Plecenik, R. M., & Simonyi, E. E.</author> <year>(1981).</year> <title>DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–635.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Senturia, S. D., Rubinstein, J., Azoury, S. J., & Adler, D.</author> <year>(1981).</year> <title>CHARGE CENTROID DETERMINATION IN FIELD-EFFECT EXPERIMENTS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–503.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Shah, J.</author> <year>(1981).</year> <title>TIME RESOLVED OPTICAL SPECTROSCOPY IN AMORPHOUS SILICON AND CHALCOGENIDES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–533.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Shanks, H. R., Jeffrey, F. R., & Lowry, M. E.</author> <year>(1981).</year> <title>BONDING IN HYDROGENATED AMORPHOUS SILICON.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–773.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Shao-qi, P., Qai, Y. B., Xian, Z. P., & Jing, Y. X.</author> <year>(1981).</year> <title>EFFECTS OF ARGON ON THE PROPERTIES OF RF SPUTTERED AMORPHOUS SILICON.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–791.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Shirafuji, J., Kim, G. I., Matsui, H., Inoue, M., Yoshino, K., & Inuishi, Y.</author> <year>(1981).</year> <title>NON-DISPERSIVE AND DISPERSIVE TRANSPORT IN AMORPHOUS GERMANIUM SELENIDE AND HYDROGENATED SILICON.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–583.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Shiraishi, T., & Adler, D.</author> <year>(1981).</year> <title>HIGH-SPEED TRANSIENT EFFECTS IN CHALCOGENIDE GLASSES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–579.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Skrotzki, W., & Haasen, P.</author> <year>(1981).</year> <title>{HARDENING} {MECHANISMS} {OF} {IONIC} {CRYSTALS} {ON} $\lbrace$110$\rbrace$ {AND} $\lbrace$100$\rbrace$ {SLIP} {PLANES}.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C3),</issue> <page>C3–119.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Street, R. A.</author> <year>(1981).</year> <title>PHOTOCONDUCTIVITY AND RELATED MEASUREMENTS OF THE CONDUCTION BAND TAIL IN a-Si:H.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–575.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Suzuki, M., Maekawa, T., Kakimoto, Y., & Bandow, T.</author> <year>(1981).</year> <title>PROPERTIES OF PURE SILICON AMORPHOUS FILMS PREPARED BY rf-BIAS SPUTTERING.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–623.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Thevenard, P., & Guermazi, M.</author> <year>(1981).</year> <title>EXTENDED DEFECTS AND PRECIPITATES IN IMPLANTED TiO2.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C3),</issue> <page>C3–113.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Thompson, M. J., Johnson, N. M., & Street, R. A.</author> <year>(1981).</year> <title>MEASUREMENT AND ANALYSIS OF CURRENT TRANSIENTS IN WELL-CHARACTERIZED a-Si:H.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–617.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Toulemonde, M., Grob, J. J., Bruyère, J. C., Deneuville, A., Hamdi, H., & Siffert, P.</author> <year>(1981).</year> <title>INTERACTION BETWEEN ARGON AND DOPANTS IN SPUTTERED a-Si : H.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–799.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Tsujino, K., Yamamoto, M., Tokunaga, A., & Yonezawa, F.</author> <year>(1981).</year> <title>LOCALIZATION OF ELECTRONS IN TWO-DIMENSIONAL RANDON NETWORKS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–55.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Ueda, S., Kumeda, M., & Shimizu, T.</author> <year>(1981).</year> <title>NMR AND ESR STUDIES ON ANNEALING EFFECTS IN a-Si : F : H AND a-Si : H.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–729.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Vardeny, Z., Tauc, J., & Fang, C. J.</author> <year>(1981).</year> <title>PICOSECOND DYNAMICS OF CARRIERS IN AMORPHOUS SEMICONDUCTORS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–539.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Viščor, P., & Yoffe, A. D.</author> <year>(1981).</year> <title>STABLE AMORPHOUS GERMANIUM FILMS PREPARED IN ULTRA HIGH VACUUM AND MEASURED IN-SITU : STRUCTURE AND ELECTRONIC PROPERTIES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–691.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Vérié, C., Rochette, J. F., & Rebouillat, J. P.</author> <year>(1981).</year> <title>NEW AMORPHOUS ALLOY SEMICONDUCTORS : a-Si1-xSnx.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–667.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Weaire, D., & Lambert, C. J.</author> <year>(1981).</year> <title>THE DECIMATION METHOD AND ANDERSON LOCALIZATION.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–47.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Weil, R., Janai, M., Pratt, B., Levin, K., & Moser, F.</author> <year>(1981).</year> <title>GLOW-DISCHARGE a-Si : F PREPARED FROM SiF2GAS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–643.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Welsch, H. M., Fuhs, W., Greeb, K. H., & Mell, H.</author> <year>(1981).</year> <title>PRIMARY AND SECONDARY PHOTOCURRENTS IN n-TYPE AND p-TYPE a-Si:H FILMS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–567.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Wronski, C. R., Goldstein, Y., Kelemen, S., Abeles, B., & Witzke, H.</author> <year>(1981).</year> <title>CORRELATION OF ELECTRICAL PROPERTIES OF a-SiHxMIS SOLAR CELL STRUCTURES WITH THE STATE OF OXIDATION OF THE INTERFACE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–475.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Xu, W. Y., Sun, Z. L., Wang, Z. P., & Lee, D. L.</author> <year>(1981).</year> <title>THE ENHANCEMENT OF THE DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY OF GD a-Si INTRODUCING O2, N2.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–695.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Yamamoto, N., Wakita, K., Nakayama, Y., & Kawamura, T.</author> <year>(1981).</year> <title>PHOTOELECTRIC PROPERTIES OF GD a-Si : H MONOLAYER FILMS FOR ELECTROPHOTOGRAPHIC APPLICATIONS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–495.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Yan, W. Z., Marfaing, Y., & Dixmier, J.</author> <year>(1981).</year> <title>DOPING EFFECTS IN TRANSPORT PROPERTIES IN a-Si p-n JUNCTIONS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–515.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Zellama, K., Germain, P., Picard, C., & Bourdon, B.</author> <year>(1981).</year> <title>A THEORETICAL STUDY OF HYDROGEN EXODIFFUSION IN a-Si : H, COMPARISON WITH CONDUCTIVITY MEASUREMENTS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–815.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Adriaenssens, G. J., Michiel, H., & Hammam, H.</author> <year>(1981).</year> <title>ISOTHERMAL RELAXATION CURRENTS IN ARSENIC CHALCOGENIDES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–939.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Aleksiejünas, A., Bareikiené, R., Bondarenko, V., & Gečiauskas, S.</author> <year>(1981).</year> <title>Article.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C5–1059.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Andriesh, A. M., Gerasimenko, V. S., Ivaschenko, Yu. N., … Shutov, S. D.</author> <year>(1981).</year> <title>EFFECT OF COMPOSITION AND STRUCTURE ON TRANSPORT PROPERTIES OF CHALCOGENIDE GLASSES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–963.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Beyer, W., Mell, H., & Overhof, H.</author> <year>(1981).</year> <title>TRANSPORT PROPERTIES OF COMPENSATED a-Si FILMS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–103.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Bogomolova, L. D., Jachkin, V. A., Glassova, M. P., & Spasibkina, S. N.</author> <year>(1981).</year> <title>VANADATE SEMICONDUCTING GLASSES DOPED WITH OXIDES OF OTHER TRANSITION METALS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–993.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Booth, D. C., & Voss, K. J.</author> <year>(1981).</year> <title>THE OPTICAL AND STRUCTURAL PROPERTIES OF CVD GERMANIUM CARBIDE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–1033.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Bourne, L. C., Rowland, S. C., & Bienenstock, A.</author> <year>(1981).</year> <title>RADIAL DISTRIBUTION FUNCTION STUDIES OF GLASSY GERMANIUM-SILVER-CHALCOGEN ALLOYS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–951.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Bresser, W. J., Boolchand, P., Suranyi, P., & de Neufville, J. P.</author> <year>(1981).</year> <title>INTRINSICALLY BROKEN CHALCOGEN CHEMICAL ORDER IN STOICHIOMETRIC GLASSES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C4–193.</page> |
crossref | en | article | 10.1051 | cambridge-university-press-author-date | <author>Brinkmann, R., Elwenspoek, M., von Hartrott, M., Novak, A., & Quitmann, D.</author> <year>(1981).</year> <title>Article.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>42</volume> <issue>(C4),</issue> <page>C5–1055.</page> |
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