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<author>Benchimol, J. L., & Quillec, M.</author> <year>(1982).</year> <title>SELF-SUPERSATURATION IN LIQUID PHASE EPITAXY OF InGaAs ON InP : A SIMPLIFIED L.P.E. TECHNIQUE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–69.</page>
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<author>Benz, K. W., Haspeklo, H., & Bosch, R.</author> <year>(1982).</year> <title>GROWTH OF InP-EPITAXIAL LAYERS : A COMPARISON BETWEEN MOVPE- AND VPE-TECHNIQUES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–393.</page>
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<author>Beuchet, G., Clemensat, D., & Thebault, P.</author> <year>(1982).</year> <title>MULTICHAMBER REACTORS : A SOLUTION TO THE PROBLEM OF GRADED HETEROINTERFACES IN HOT-WALL VPE SYSTEMS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–259.</page>
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<author>Biscondi, M.</author> <year>(1982).</year> <title>STRUCTURE ET PROPRIETES MECANIQUES DES JOINTS DE GRAINS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–293.</page>
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<author>Blood, P., Harris, J. J., Joyce, B. A., & Neave, J. H.</author> <year>(1982).</year> <title>DEEP STATES AND SURFACE PROCESSES IN GaAs GROWN BY MOLECULAR BEAM EPITAXY.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–351.</page>
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<author>Bonnet, R.</author> <year>(1982).</year> <title>DISLOCATIONS INTERFACIALES EN ELASTICITE ANISOTROPE ET ISOTROPE NON HOMOGENE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–215.</page>
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<author>Bonnevie, D., & Huet, D.</author> <year>(1982).</year> <title>MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF In0.53Ga0.47As AND InP SUBSTRATE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–445.</page>
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<author>Bourret, A., dAnterroches, C., & Penisson, J. M.</author> <year>(1982).</year> <title>STRUCTURE DES JOINTS EN MICROSCOPIE ELECTRONIQUE HAUTE RESOLUTION (MEHR).</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–83.</page>
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<author>Briant, C. L., & Messmer, R. P.</author> <year>(1982).</year> <title>THE EFFECT OF IMPURITY ELEMENTS ON CHEMICAL BONDING AT GRAIN BOUNDARIES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–255.</page>
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<author>Bristowe, P. D.</author> <year>(1982).</year> <title>COMPUTER MODELING OF GRAIN BOUNDARIES IN CUBIC METALS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–33.</page>
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<author>Budai, J., & Sass, S. L.</author> <year>(1982).</year> <title>DIFFRACTION STUDIES OF THE ATOMIC STRUCTURE OF GRAIN BOUNDARIES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–103.</page>
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<author>Cabané-Brouty, F., & Bernardini, J.</author> <year>(1982).</year> <title>SEGREGATION AND DIFFUSION.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–163.</page>
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<author>Cahn, J. W.</author> <year>(1982).</year> <title>TRANSITIONS AND PHASE EQUILIBRIA AMONG GRAIN BOUNDARY STRUCTURES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–199.</page>
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<author>Chaminant, G., Gilleron, M., Charil, J., Devoldere, P., & Bouley, J. C.</author> <year>(1982).</year> <title>{GROWTH} {AND} {PROPERTIES} {OF} 1,3 {AND} 1.5$\mathrm{\mu}$m {GaInAsP} {DOUBLE} {HETEROSTRUCTURE} {WITH} {DIFFERENT} {ACTIVE} {LAYER} {THICKNESSES}.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–481.</page>
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<author>Chandrasekaran, M., Guénin, G., & Delaey, L.</author> <year>(1982).</year> <title>SURFACE RELAXATION AS A POSSIBLE ORIGIN OF SURFACE MARTENSITE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C4),</issue> <page>C4–591.</page>
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<author>Chatillon, C., & Bernard, C.</author> <year>(1982).</year> <title>THERMODYNAMIC STUDIES OF THE SILICON TRANSPORT IN LPE GROWTH ON InP SUBSTRATES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–357.</page>
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<author>Chatterjee, A. K., Faktor, M. M., Moss, R. H., & White, E. A. D.</author> <year>(1982).</year> <title>A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V COMPOUNDS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–491.</page>
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<author>Davies, P., Hasdell, N. B., & Giles, P. L.</author> <year>(1982).</year> <title>THE VAPOUR PHASE ETCHING AND N-TYPE DOPING OF INDIUM PHOSPHIDE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–287.</page>
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<author>de Cremoux, B.</author> <year>(1982).</year> <title>INSTABILITY CRITERIA IN TERNARY AND QUATERNARY I I I-V EPITAXIAL SOLID SOLUTIONS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–19.</page>
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<author>de Jong, T., Douma, W. A. S., & Saris, F. W.</author> <year>(1982).</year> <title>SILICON MODULATION DOPING STRUCTURES USING MULTI-STEP MOLECULAR BEAM EPITAXY AND ION IMPLANTATION.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–173.</page>
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<author>Delavignette, P.</author> <year>(1982).</year> <title>GEOMETRICAL APPROACH TO THE COINCIDENCE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–1.</page>
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<author>Dorrity, I. A.</author> <year>(1982).</year> <title>VAPOUR PHASE GROWTH OF GaAs BY THE HYDRIDE TECHNIQUE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–457.</page>
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<author>Duchemin, J. P.</author> <year>(1982).</year> <title>THE USE OF LOW PRESSURE IN THE EPITAXIAL GROWTH OF Si, GaAs, GaAlAs, InP, GaInAs, GaInAsP AND InAlAs.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–87.</page>
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<author>Duggan, G., Dawson, P., Foxon, C. T., & t Hooft, G. W.</author> <year>(1982).</year> <title>THE EFFECT OF ARSENIC SPECIES ON THE MINORITY CARRIER PROPERTIES OF (AlGa)As-GaAs DOUBLE HETEROSTRUCTURES GROWN BY MBE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–129.</page>
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<author>Dutartre, D., Gavand, M., Mayet, L., Laugier, A., & Ansara, I.</author> <year>(1982).</year> <title>THE EFFECT OF Ge ON THE LIQUIDUS AND SOLIDUS IN THE SYSTEM AlGaAs : Ge.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–39.</page>
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<author>el Jani, B., Leroux, M., Grenet, J. C., & Gibart, P.</author> <year>(1982).</year> <title>GaAs METAL ORGANICS VAPOUR PHASE EPITAXY : RESIDUAL CARBON.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–303.</page>
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<author>Frijlink, P. M., & Maluenda, J.</author> <year>(1982).</year> <title>QUANTUM WELL AND MODULATION DOPED GaAs - Gal-xAlxAs HETEROSTRUCTURES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–185.</page>
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<author>Frost, H. J., & Spaepen, F.</author> <year>(1982).</year> <title>HARD SPHERE MODELS FOR THE STRUCTURE OF GRAIN BOUNDARIES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–73.</page>
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<author>Fujita, S., Hamaguchi, N., Takeda, Y., & Sasaki, A.</author> <year>(1982).</year> <title>LOW-TEMPERATURE GROWTH CONDITIONS AND PROPERTIES OF AlGa (As) Sb ON GaSb SUBSTRATE BY LPE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–29.</page>
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<author>Gentner, J. L., & Cadoret, R.</author> <year>(1982).</year> <title>LOW PRESSURE VAPOUR PHASE EPITAXY OF GaAs –THE GROWTH RATE LIMITING PROCESSES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–111.</page>
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<author>Giling, L. J.</author> <year>(1982).</year> <title>TEMPERATURES AND FLOWS IN HORIZONTAL EPI REACTORS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–235.</page>
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<author>Glas, F., Treacy, M. M. J., Quillec, M., & Launois, H.</author> <year>(1982).</year> <title>INTERFACE SPINODAL DECOMPOSITION IN LPE InxGa1-xAsyP1-y LATTICE MATCHED TO InP.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–11.</page>
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<author>Glew, R. W.</author> <year>(1982).</year> <title>H2Se DOPING OF MOCVD GROWN GaAs AND GaAlAs.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–281.</page>
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<author>Goetz, K. H., Solomonov, A. V., Bimberg, D., Jürgensen, H., Razeghi, M., & Selders, J.</author> <year>(1982).</year> <title>LOW TEMPERATURE PHOTOLUMINESCENCE AND ABSORPTION OF GaxIn1-xAs/ InP.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–383.</page>
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<author>Goldstein, L., Quillec, M., Rao, K., Hénoc, P., Masson, J. M., & Marzin, J. Y.</author> <year>(1982).</year> <title>PREPARATION AND CHARACTERIZATION OF STRAINED SUPERLATTICES STRUCTURES OF InGaAs/GaAs BY MBE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–201.</page>
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<author>Golecki, I., Manasevit, H. M., Yang, J. J., Moudy, L. A., Mee, J. E., & Magee, T. J.</author> <year>(1982).</year> <title>PROPERTIES OF EPITAXIAL Si FILMS GROWN ON YTTRIA-STABILIZED CUBIC ZIRCONIA SUBSTRATES BY CHEMICAL VAPOR DEPOSITI ON.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–427.</page>
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<author>Goodridge, I. H.</author> <year>(1982).</year> <title>THE DESIGN AND OPTIMISATION OF A LARGE SCALE VPE REACTOR FOR THE GROWTH OF GaAs BY THE HALIDE PROCESS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–249.</page>
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<author>Gratias, D., & Portier, R.</author> <year>(1982).</year> <title>GENERAL GEOMETRICAL MODELS OF GRAIN BOUNDARIES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–15.</page>
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<author>Guiraldenq, P.</author> <year>(1982).</year> <title>DIFFUSION INTERGRANULAIRE ET LARGEUR DES JOINTS DE GRAINS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–137.</page>
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<author>Guy, K., Butler, E. P., & West, D. R. F.</author> <year>(1982).</year> <title>$\upepsilon$ {AND} $\upalpha${\textquotesingle} {MARTENSITE} {FORMATION} {AND} {REVERSION} {IN} {AUSTENITIC} {STAINLESS} {STEELS}.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C4),</issue> <page>C4–575.</page>
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<author>Guénin, G., Jara, D. R., Morin, M., Delaey, L., Pynn, R., & Gobin, P. F.</author> <year>(1982).</year> <title>NEW NEUTRON SCATTERING MEASUREMENTS OF PREMARTENSITIC STATE OF Cu-Zn-Al.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C4),</issue> <page>C4–597.</page>
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<author>Hall, E. L.</author> <year>(1982).</year> <title>APPLICATION OF THE ANALYTICAL ELECTRON MICROSCOPE TO THE STUDY OF GRAIN BOUNDARY CHEMISTRY.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–239.</page>
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<author>Hersee, S. D., Baldy, M., Assenat, P., Hyghe, D., Bonnet, M., & Duchemin, J. P.</author> <year>(1982).</year> <title>THE OMVPE GROWTH OF GaAs AND GaAlAs ON A LARGE SCALE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–119.</page>
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<author>Humenberger, J., Sadeghi, M., Gruber, E., Elsinger, G., Sitter, H., & Lopez-Otero, A.</author> <year>(1982).</year> <title>GROWTH OF IV-VI, II-VI AND III-V SEMICONDUCTOR COMPOUNDS BY HOT WALL EPITAXY.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–405.</page>
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<author>Jicquel, J. P., Perronnet, A., Lebled, H., Matabon, M., & Benoit, J.</author> <year>(1982).</year> <title>{EPITAXIE} {EN} {PHASE} {LIQUIDE} {DE} {DOUBLES} {HETEROSTRUCTURES} {LASER} In1-{xGaxAsyP}1-y/{InP} (x $\approx$ 0,5y, y $\approx$ 0,9) {EMETTANT} {AU} {VOISINAGE} {DE} 1,55$\mathrm{\mu}$m {ET} {CARACTERISEES} {PAR} {UNE} {FAIBLE} {DENSITE} {DE} {COURANT} {DE} {SEUIL}.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–453.</page>
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<author>Joncour, M. C., Benchimol, J. L., Burgeat, J., & Quillec, M.</author> <year>(1982).</year> <title>LIQUID PHASE EPITAXIAL GROWTH OF InxGa1-xAs/ InP NEAR SOLID INSTABILITY.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–3.</page>
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<author>Jung, H., Künzel, H., & Ploog, K.</author> <year>(1982).</year> <title>INFLUENCE OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL PROPERTIES OF MBE GROWN GaAs.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–135.</page>
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<author>Kalonji, G., & Cahn, J. W.</author> <year>(1982).</year> <title>SYMMETRY CONSTRAINTS ON THE ORIENTATION DEPENDENCE OF INTERFACIAL PROPERTIES : THE GROUP OF THE WULFF PLOT.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–25.</page>
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<author>Kisker, D. W., Stevenson, D. A., Miller, J. N., & Stringfellow, G. B.</author> <year>(1982).</year> <title>THE VAPOR PHASE INTERACTION OF TRIMETHYLALUMINUM WITH GRAPHITE DURING OMVPE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–221.</page>
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<author>Künzel, H., Jung, H., Schubert, E., & Ploog, K.</author> <year>(1982).</year> <title>INFLUENCE OF GROWTH CONDITIONS AND OF ALLOY COMPOSITION ON ELECTRICAL AND OPTICAL PROPERTIES OF MBE AlxGa1-xAs (0.2 = x = 0.4).</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–175.</page>
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<author>Landreaux, R., Boulard, O., Jicquel, J. P., … Benoit, J.</author> <year>(1982).</year> <title>{PROBLEMES} {LIES} A {LA} {REALISATION} {PAR} {EPITAXIE} {EN} {PHASE} {LIQUIDE} {DE} {LASERS} A {RUBAN} {ENTERRE} In1-{xGaxAsyP}1-y ($\uplambda$ = 1,3 $\mathrm{\mu}$m et 1,5 $\mathrm{\mu}$m) {DE} {FAIBLE} {LARGEUR} (1 {\`{a}} 3 $\mathrm{\mu}$m).</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–455.</page>
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<author>Linnebach, R., Hess, K., Lösch, K., & Schemmel, G.</author> <year>(1982).</year> <title>LPE-GROWTH OF HIGH PURITY Ga0.47In0.53As- AND Ga0.31In0.69As0.69P0.31- LAYERS LATTICE MATCHED TO InP.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C5),</issue> <page>C5–61.</page>
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<author>Lormand, G.</author> <year>(1982).</year> <title>ELECTRICAL PROPERTIES OF GRAIN BOUNDARIES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C6),</issue> <page>C6–283.</page>
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<author>Lovey, F. C., & Chandrasekaran, M.</author> <year>(1982).</year> <title>{DIFFRACTION} {EFFECTS} {IN} $\upbeta$ Cu-Zn {AND} $\upbeta$-Cu-Zn-Al {SURFACE} {MARTENSITE} {TRANSFORMATION} {AND} {MICROSTRUCTURE}.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>43</volume> <issue>(C4),</issue> <page>C4–583.</page>
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