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crossref
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cambridge-university-press-author-date
<author>BALESTRA, F., HAFEZ, L., & GHIBAUDO, G.</author> <year>(1988).</year> <title>A NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS AT AMBIENT AND LIQUID HELIUM TEMPERATURES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–817.</page>
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<author>BALLAY, N., & BAYLAC, B.</author> <year>(1988).</year> <title>CAD MOSFET MODEL FOR EPROM CELLS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–681.</page>
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<author>BARRIER, J., RENAUD, M., BOHER, P., & SCHNEIDER, J.</author> <year>(1988).</year> <title>INTERFACE STATES PARAMETERS DEDUCED FROM DLTS, ICTS AND CONDUCTANCE METHODS ON TiAu/Si3N4/GaInAs MIS STRUCTURES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–227.</page>
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<author>BELACHE, A., VANOVERSCHELDE, A., DAMBRINE, G., & WOLNY, M.</author> <year>(1988).</year> <title>ON THE MICROWAVE LOW TEMPERATURE ANALYSIS BEHAVIOUR OF HEMTs.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–709.</page>
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<author>BELLENS, R., HEREMANS, P., GROESENEKEN, G., & MAES, H. E.</author> <year>(1988).</year> <title>ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–651.</page>
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<author>BENGTSSON, S., & ENGSTRÖM, O.</author> <year>(1988).</year> <title>ELECTRONIC PROPERTIES OF SILICON INTERFACES PREPARED BY DIRECT BONDING.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–63.</page>
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<author>BERGONZONI, C., BENECCHI, R., & CAPRARA, P.</author> <year>(1988).</year> <title>HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–779.</page>
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<author>BERTAGNOLLI, E., WIECZOREK, C., HOFFMANN, B., & SCHABER, H.</author> <year>(1988).</year> <title>NONSELECTIVE W/WSix -CVD TECHNOLOGY FOR LOW RESISTANCE VIA PLUGS ON ALUMINUM.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–179.</page>
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<author>BEZ, R., CANTARELLI, D., CAPPELLETTI, P., & MAGGIONI, F.</author> <year>(1988).</year> <title>SPICE MODEL FOR TRANSIENT ANALYSIS OF EEPROM CELLS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–677.</page>
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<author>BIERMANS, P. T. J., POORTER, T., & MERKS-EPPINGBROEK, H. J. H.</author> <year>(1988).</year> <title>THE IMPACT OF DIFFERENT HOT-CARRIER-DEGRADATION COMPONENTS ON THE OPTIMIZATION OF SUBMICRON n-CHANNEL LDD TRANSISTORS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–787.</page>
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<author>BIRBAS, A. N., PENG, Q., ZIEL, A. V. D., & RHEENEN, A. D. V.</author> <year>(1988).</year> <title>ACCELERATION 1/F NOISE IN SILICON MOSFETs.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–153.</page>
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<author>BOCK, W., TREITINGER, L., & PRETTL, W.</author> <year>(1988).</year> <title>HIGH-SPEED OPTICAL DETECTION UP TO 2.5Gbit/s WITH A DOUBLE POLYSILICON SELF-ALIGNED SILICON BIPOLAR TRANSISTOR.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–89.</page>
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<author>BOHNERT, G., HÄCKER, R., & HANGLEITER, A.</author> <year>(1988).</year> <title>POSITION RESOLVED CARRIER LIFETIME MEASUREMENTS IN SILICON POWER DEVICES BY TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–617.</page>
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article
10.1051
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<author>BRIERE, M. A.</author> <year>(1988).</year> <title>A CONTACTLESS TECHNIQUE FOR THE CHARACTERIZATION OF INTERNALLY GETTERED CZ SILICON.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–141.</page>
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<author>CANALI, C., CORSI, F., MUSCHITIELLO, M., STUCCHI, M., & ZANONI, E.</author> <year>(1988).</year> <title>CHARACTERIZATION OF ANOMALOUS LATCH-UP EFFECTS BY MEANS OF INFRARED MICROSCOPY AND SPICE SIMULATION.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–809.</page>
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<author>CAPRARA, P., BERGONZONI, C., & CAVIONI, T.</author> <year>(1988).</year> <title>A NOVEL METHOD FOR DIMENSIONAL LOSS CHARACTERIZATION.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–745.</page>
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<author>CHEN, D., & LI, Z.</author> <year>(1988).</year> <title>A NEW PUNCHTHROUGH MODEL FOR SHORT CHANNEL MOSFET.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–761.</page>
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<author>CLAUSS, W., PARISI, J., PEINKE, J., RAU, U., & HUEBENER, R. P.</author> <year>(1988).</year> <title>A MINIATURIZED APPROACH TO THE CRYOELECTRONIC MAGNETIC FIELD EFFECT TRANSISTOR.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–637.</page>
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article
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<author>CONTI, M., TURCHETTI, C., & MASETTI, G.</author> <year>(1988).</year> <title>A NEW ANALYTICAL AND STATISTICAL-ORIENTED APPROACH FOR THE TWO-DIMENSIONAL ANALYSIS OF SHORT-CHANNEL MOSFETs.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–253.</page>
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article
10.1051
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<author>COOPMANS, F.</author> <year>(1988).</year> <title>RESIST SCHEMES FOR SUBMICRON OPTICAL LITHOGRAPHY.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–723.</page>
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<author>COPPEE, J. L., FIGUERAS, E., GOFFIN, B., GLOESENER, D., & WIELE, F. V. D.</author> <year>(1988).</year> <title>NARROW CHANNEL EFFECT ON n- AND p-CHANNEL DEVICES FABRICATED WITH THE SILO AND BOX ISOLATION TECHNIQUES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–749.</page>
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<author>CROSNIER, Y., TEMCAMANI, F., LIPPENS, D., & SALMER, G.</author> <year>(1988).</year> <title>AVALANCHE AND TUNNELING BREAKDOWN MECHANISMS IN HEMTS POWER STRUCTURES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–563.</page>
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article
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<author>DANGLA, J., & HAVOND, D.</author> <year>(1988).</year> <title>COMPARISON OF ECL GATE PERFORMANCES USING DIFFERENT HETEROJUNCTION BIPOLAR TRANSISTORS PROCESS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–575.</page>
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<author>DESCHLER, M., GRÜTER, K., SCHLEGEL, A., BECCARD, R., JÜRGENSEN, H., & BALK, P.</author> <year>(1988).</year> <title>VERY RAPID GROWTH OF HIGH QUALITY GaAs, InP AND RELATED III-V COMPOUNDS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–689.</page>
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<author>DIERICKX, B., SIMOEN, E., VERMEIREN, J., & CLAEYS, C.</author> <year>(1988).</year> <title>OPERATION OF MAJORITY AND MINORITY CARRIER MOSFETS AT LIQUID HELIUM TEMPERATURE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–741.</page>
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<author>DUBOIS, E., COPPEE, J.-L., BACCUS, B., & COLLARD, D.</author> <year>(1988).</year> <title>ELECTRICAL PERFORMANCES COMPARISON OF SEMI AND FULLY RECESSED ISOLATION STRUCTURES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–813.</page>
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<author>EHINGER, K., KABZA, H., WENG, J., … BIEGER, J.</author> <year>(1988).</year> <title>SHALLOW DOPING PROFILES FOR HIGH-SPEED BIPOLAR TRANSISTORS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–109.</page>
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<author>ELEWA, T., HADDARA, H., CRISTOLOVEANU, S., & BRUEL, M.</author> <year>(1988).</year> <title>CHARGE PUMPING IN SILICON ON INSULATOR STRUCTURES USING GATED P-I-N DIODES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–137.</page>
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<author>FONTAINE, C., CASTAGNE, J., BEDEL, E., & MUNOZ-YAGUE, A.</author> <year>(1988).</year> <title>ELIMINATION OF TWINNING IN MOLECULAR BEAM EPITAXY OF GaAs/Si and GaAs/INSULATOR.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–697.</page>
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<author>FREMONT, H., TOUBOUL, A., GOBLED, D., & DANTO, Y.</author> <year>(1988).</year> <title>NUMERICAL SIMULATIONS TO IMPROVE THE ACCURACY OF ELECTRON-BEAM TESTING ON PASSIVATED INTEGRATED CIRCUITS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–149.</page>
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<author>FRIEDRICH, J., NEUDECK, G. W., & LIU, S. T.</author> <year>(1988).</year> <title>SILICON SELECTIVE AND LATERAL OVERGROWTH EPITAXY : GROWTH AND ELECTRICAL EVALUATION FOR DEVICES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–71.</page>
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<author>GARRIGUES, M., ALEXANDRE, A., ROJO, P., PEDRON, T., BELHADDAD, K., & PONCET, A.</author> <year>(1988).</year> <title>TWO-DIMENSIONAL COMPUTER SIMULATION OF HOT CARRIER DEGRADATION IN N. MOSFETs.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–673.</page>
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<author>GIRARD, P., PISTOULET, B., & VALENZA, M.</author> <year>(1988).</year> <title>ELECTRON BEAM WRITING ERASURE SWITCHES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–805.</page>
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<author>GITLIN, D., VISWANATHAN, C. R., & ABIDI, A. A.</author> <year>(1988).</year> <title>OUTPUT IMPEDANCE FREQUENCY DISPERSION AND LOW FREQUENCY NOISE IN GaAs MESFETs.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–201.</page>
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<author>GODTS, P., CONSTANT, E., ZIMMERMANN, J., & DEPREEUW, D.</author> <year>(1988).</year> <title>INVESTIGATION OF THE INFLUENCE OF DX CENTERS ON HEMT OPERATION AT ROOM TEMPERATURE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–705.</page>
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<author>GUEGAN, G., LERME, M., GAUTIER, J., … REIMBOLD, G.</author> <year>(1988).</year> <title>HALF-MICROMETER N-MOS TECHNOLOGY FOR GIGABIT LOGIC.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–737.</page>
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<author>GÉRODOLLE, A., GIROULT, G., MARTIN, S., & NOUAILHAT, A.</author> <year>(1988).</year> <title>AN IMPROVED FULLY CMOS COMPATIBLE BIPOLAR STRUCTURE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–93.</page>
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<author>HÄNSCH, W., ORLOWSKI, M., & WEBER, W.</author> <year>(1988).</year> <title>THE HOT-ELECTRON PROBLEM IN SUBMICRON MOSFET.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–597.</page>
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<author>JOHNSON, M. K., COE, D. J., ANNIS, A. D., & SANDOE, J. N.</author> <year>(1988).</year> <title>TIME DEPENDENT BEHAVIOUR OF FIELD LIMITING RING PASSIVATION SYSTEMS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–241.</page>
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<author>KHOSLA, R. P.</author> <year>(1988).</year> <title>MEGAPIXEL IMAGE SENSORS TECHNOLOGY.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–233.</page>
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<author>KITTILSLAND, G., & STEMME, G.</author> <year>(1988).</year> <title>FILTER STRUCTURE FOR SUB-MICRON FILTRATION FABRICATED IN SILICON.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–641.</page>
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<author>KLAASSEN, F. M., BIERMANS, P. T. J., & VELGHE, R. M. D.</author> <year>(1988).</year> <title>THE SERIES RESISTANCE OF SUBMICRON MOSFETs AND ITS EFFECT ON THEIR CHARACTERISTICS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–257.</page>
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<author>KLOSE, H., MEISTER, T., HOFFMANN, B., WENG, J., & PFÄFFEL, B.</author> <year>(1988).</year> <title>WELL - OPTIMIZATION FOR HIGH SPEED BICMOS TECHNOLOGIES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–97.</page>
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<author>KNOSPE, K., & GOSER, K.</author> <year>(1988).</year> <title>HIGHER EFFICIENCY OF CMOS-PROCESS-COMPATIBLE PHOTODIODES IN SOI-TECHNIQUE BY REFLECTING FILMS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–75.</page>
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<author>KÖCK, A., BEINSTINGL, W., & GORNIK, E.</author> <year>(1988).</year> <title>SURFACE PLASMON POLARITON ENHANCED LIGHT EMISSION AND PHOTORESPONSE IN SCHOTTKY DIODES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–591.</page>
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<author>LACAITA, A., GHIONI, M., & COVA, S.</author> <year>(1988).</year> <title>ULTRAFAST SINGLE PHOTON DETECTOR WITH DOUBLE EPITAXIAL STRUCTURE FOR MINIMUM CARRIER DIFFUSION EFFECT.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–633.</page>
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<author>LAURENTI, J. P., ROENTGEN, P., WOLTER, K., SEIBERT, K., KURZ, H., & CAMASSEL, J.</author> <year>(1988).</year> <title>IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–693.</page>
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<author>LAUWERS, L., & MEYER, K. D.</author> <year>(1988).</year> <title>NOVEL CALCULATIONS IN THE FIELD OF ACCURATE ANALYTICAL MOS TRANSISTOR MODELLING.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–249.</page>
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<author>LIANG, J. B., BOECK, J. D., MERTENS, R., & BORGHS, G.</author> <year>(1988).</year> <title>A GaAs ON Si COPLANAR TECHNOLOGY BY EMBEDDED MOLECULAR BEAM EPITAXY.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–701.</page>
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<author>LIPPENS, P., MAEX, K., den HOVE, L. V., … van der WEG, W.</author> <year>(1988).</year> <title>DEGRADATION OF THE POLY-Si/SILICIDE STRUCTURE IN ADVANCED MOS-TECHNOLOGIES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–191.</page>
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<author>LOUALICHE, S., GINOUDI, A., LHARIDON, H., … FAVENNEC, P. N.</author> <year>(1988).</year> <title>HIGH PERFORMANCE SCHOTTKY DIODE AND FET ON InP.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–217.</page>
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<author>MAHNKOPF, R., PRZYREMBEL, G., & WAGEMANN, H. G.</author> <year>(1988).</year> <title>ANNEALING OF HOT-CARRIER-INDUCED MOSFET DEGRADATION.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–771.</page>
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<author>MALIK, R. J., LEVI, A. F. J., LEVINE, B. F., … RYAN, R. W.</author> <year>(1988).</year> <title>ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–607.</page>
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<author>MALLARDEAU, C., ROCHE, M., DEPEY, M., … HEFNER, A.</author> <year>(1988).</year> <title>A TRENCH ISOLATED HIGH SPEED BIPOLAR PROCESS FOR A 10K GATE, 950MHz, VLSI CIRCUIT.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>49</volume> <issue>(C4),</issue> <page>C4–105.</page>
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