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yuanchuan
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<author>AITE, K., KOEKOEK, R., HOLLEMAN, J., & MIDDELHOEK, J.</author> <year>(1989).</year> <title>CHARACTERIZATION OF INTRINSIC STRESSES OF PECVD SILICON NITRIDE FILMS DEPOSITED IN A HOT-WALL REACTOR.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–323.</page>
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<author>ATTOLINI, G., BOCCHI, C., FRIGERI, C., & PELOSI, C.</author> <year>(1989).</year> <title>GROWTH CONDITION ANALYSIS AND CHARACTERIZATION OF HIGH PERFECTION InGaAs/InP LAYERS GROWN BY HYDRIDE VPE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–539.</page>
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<author>AUDISIO, S., & GUIRALDENQ, P.</author> <year>(1989).</year> <title>ÉTUDE, PAR LA MÉTHODE DES RADIOTRACEURS, DE LA DIFFUSION DU FER DANS LE SILICIURE DE FER Fe3Si OBTENU PAR CVD.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–455.</page>
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<author>BARY, A., & NOUET, G.</author> <year>(1989).</year> <title>EBIC MEASUREMENTS ON LOW ANGLE GRAIN BOUNDARIES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–158.</page>
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<author>BLANQUET, E., VAHLAS, C., BERNARD, C., MADAR, R., PALLEAU, J., & TORRES, J.</author> <year>(1989).</year> <title>CHEMICAL VAPOR DEPOSITION OF TaSi2 AND WSi2 AT ATMOSPHERIC PRESSURE FROM IN SITU PREPARED METAL CHLORIDES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–557.</page>
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<author>BLUMTRITT, H., KITTLER, M., & SEIFERT, W.</author> <year>(1989).</year> <title>POSSIBILITIES OF FORMATION OF BRIGHT EBIC CONTRASTS DUE TO CRYSTAL DEFECTS IN SILICON.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–183.</page>
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<author>BODE, M., & HABERMEIER, H.-U.</author> <year>(1989).</year> <title>A NEW APPROACH FOR THE PHYSICAL INTERPRETATION OF TEMPERATURE DEPENDENT EBIC CONTRAST MEASUREMENTS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–181.</page>
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<author>BOYEAUX, J. P., & LAUGIER, A.</author> <year>(1989).</year> <title>LBIC QUANTITATIVE MAPPING.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–111.</page>
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<author>BREITENSTEIN, O.</author> <year>(1989).</year> <title>SCANNING-DLTS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–101.</page>
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<author>BRONIATOWSKI, A., & BERNARD, D.</author> <year>(1989).</year> <title>PHOTOCAPACITY STUDY OF GRAIN BOUNDARY RECOMBINATION IN SILICON.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–155.</page>
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<author>CABANEL, C., & LAVAL, J.-Y.</author> <year>(1989).</year> <title>ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON BY THE S.T.E.B.I.C. METHOD.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–154.</page>
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<author>CASTALDINI, A., CAVALLINI, A., POGGI, A., & SUSI, E.</author> <year>(1989).</year> <title>LIGHT BEAM INDUCED CURRENT IMAGING OF THE ELECTRICAL ACTIVITY OF STACKING FAULTS IN CZ SILICON.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–169.</page>
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<author>CHATFIELD, C., LINDSTRÖM, J. N., & SJÖSTRAND, M. E.</author> <year>(1989).</year> <title>MICROSTRUCTURE OF CVD - Al2O3.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–377.</page>
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<author>CHEN, Y. P., ZHENG, Z. Q., LI, S. Y., & MA, H. L.</author> <year>(1989).</year> <title>THE PREPARATION AND PROPERTIES OF PECVD-MADE SnO2 THIN FILMS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–605.</page>
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<author>CHOQUET, P. A., HARPER, M. A., & RAPP, R. A.</author> <year>(1989).</year> <title>CHROMIZING-ALUMINIZING AND CHROMIZING-SILICONIZING COATING OF A FERRITIC STEEL.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–681.</page>
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<author>CHRISTEN, J., & BIMBERG, D.</author> <year>(1989).</year> <title>LATERAL MAPPING OF ATOMIC SCALE INTERFACE MORPHOLOGY AND DISLOCATIONS IN QUANTUM WELLS BY CATHODOLUMINESCENCE IMAGING.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–85.</page>
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<author>COLLIN, J.-P.</author> <year>(1989).</year> <title>ELECTRON AND OPTICAL BEAM TESTING OF INTEGRATED CIRCUITS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–129.</page>
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<author>CROS, B., CAMON, H., BROCHETON, Y., … RIBES, M.</author> <year>(1989).</year> <title>CARACTÉRISATION DE COUCHES MINCES DE VERRES DE CHALCOGENURE PRÉPARÉES PAR PECVD.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–343.</page>
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<author>DELIDAIS, I., MAUGIS, P., BALLUTAUD, D., TABET, N., & MAURICE, J.-L.</author> <year>(1989).</year> <title>EBIC MEASUREMENT OF BULK AND SURFACE RECOMBINATION IN p-TYPE SILICON : INFLUENCE OF OXIDATION AND HYDROGENATION.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–187.</page>
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<author>DERRE, A., TEYSSANDIER, F., & DUCARROIR, M.</author> <year>(1989).</year> <title>TITANIUM CARBIDE COATINGS ON STEEL : STUDY OF THE CONDITIONS OF ELABORATION AND OF SUBSTRATE-COATING INTERACTIONS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–445.</page>
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<author>DESCHANVRES, J. L., CELLIER, F., DELABOUGLISE, G., LABEAU, M., LANGLET, M., & JOUBERT, J. C.</author> <year>(1989).</year> <title>THIN FILM OF CERAMIC OXIDES BY MODIFIED CVD.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–695.</page>
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<author>DIMITRIOU, P., POST, G., & SCAVENNEC, A.</author> <year>(1989).</year> <title>UV PHOTON ASSISTED CVD OF SiO2 FOR LOW-DRIFT InP MISFETS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–675.</page>
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<author>DJEMEL, A., CASTAING, J., & CHEVALLIER, J.</author> <year>(1989).</year> <title>BEAM INDUCED VARIATIONS OF GaAs CATHODOLUMINESCENCE : EFFECT OF HYDROGEN AND DEFORMATION.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–178.</page>
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<author>DOMÍNGUEZ-ADAME, F., MÉNDEZ, B., PIQUERAS, J., DIEGO, N. D., LLOPIS, J., & MOSER, P.</author> <year>(1989).</year> <title>CATHODOLUMINESCENCE AND POSITRON ANNIHILATION STUDY OF DEFECT DISTRIBUTION IN III-V WAFERS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–179.</page>
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<author>DONOLATO, C.</author> <year>(1989).</year> <title>MODELING THE EBIC MEASUREMENTS OF DIFFUSION LENGTHS AND THE RECOMBINATION CONTRAST AT EXTENDED DEFECTS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–57.</page>
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<author>DROUIN-LADOUCE, B., PITON, J. P., & VANDENBULCKE, L.</author> <year>(1989).</year> <title>CVD OF TITANIUM CARBIDE AT MODERATE TEMPERATURE FROM TITANIUM SUBCHLORIDES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–367.</page>
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<author>DUGNE, O., PROUHET, S., GUETTE, A., … PFISTER-GUILLOUZO, G.</author> <year>(1989).</year> <title>AES, XPS AND TEM CHARACTERIZATION OF BORON NITRIDE DEPOSITED UNDER CHEMICAL VAPOR INFILTRATION (CVI) CONDITIONS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–333.</page>
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<author>EBOTHE, J.</author> <year>(1989).</year> <title>HOLE-DIFFUSION LENGTH AND TRANSPORT PARAMETERS OF THIN CDS FILMS FROM A SCHOTTKY BARRIER.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–176.</page>
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<author>ECKSTEIN, M., JAKUBOWICZ, A., BODE, M., & HABERMEIER, H.-U.</author> <year>(1989).</year> <title>OBSERVATION OF GETTERING PHENOMENA AT DEFECTS IN GaAs BY SIMULTANEOUS EBIC/CL MEASUREMENTS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–180.</page>
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<author>EK, S. V.</author> <year>(1989).</year> <title>FUNDAMENTALS OF THE PLASMA INDUCED AND ASSISTED CVD : PLASMA PARAMETERS CONTROLLING THE CHEMICAL EQUILIBRIUM, THE DEPOSITION KINETICS AND THE PROPERTIES OF THE FILMS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–617.</page>
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<author>EPPENGA, P., SCHUIVENS, E., & HENDRIKS, M.</author> <year>(1989).</year> <title>AN INDUSTRIAL PROCESS FOR BPSG-TEOS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–575.</page>
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<author>ESROM, H., WAHL, G., & KOGELSCHATZ, U.</author> <year>(1989).</year> <title>UV LIGHT-INDUCED DEPOSITION OF COPPER FILMS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–719.</page>
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<author>FARVACQUE, J. L., & SIEBER, B.</author> <year>(1989).</year> <title>RECOMBINATION AT DISLOCATION LEVELS LOCATED IN THE SPACE CHARGE REGION. EBIC CONTRAST EXPERIMENTS AND THEORY.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–165.</page>
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<author>FREDRIKSSON, E., & CARLSSON, J.-O.</author> <year>(1989).</year> <title>PHASE TRANSFORMATION DURING CVD OF ALUMINIUM OXIDE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–391.</page>
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<author>FREUNDLICH, A.</author> <year>(1989).</year> <title>HETEROEPITAXY OF COVALENT SEMICONDUCTORS : FUNDAMENTALS, GROWTH AND CRYSTAL PROPERTIES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–499.</page>
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<author>FRIGERI, C.</author> <year>(1989).</year> <title>MAJORITY CARRIER ASSESSMENT BY EBIC : DETERMINATION OF DOPANT CONCENTRATION AT COMPOSITION INHOMOGENEITIES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–184.</page>
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<author>GALERIE, A., DU, G. L., CAILLET, M., MARI, P. A., & PINGAUX, B.</author> <year>(1989).</year> <title>PROTECTION CONTRE LOXYDATION DE POUDRES DE FER DESTINÉES A LENREGISTREMENT MAGNÉTIQUE PAR DÉPOT DE SILICIUM EN LIT FLUIDISÉ.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–709.</page>
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<author>GESHEVA, K. A., & BESHKOV, G. S.</author> <year>(1989).</year> <title>DEPOSITION AND STUDY OF CARBONYL CVD-W THIN FILMS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–565.</page>
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<author>GHITANI, H. E.</author> <year>(1989).</year> <title>LBIC ANALYSIS FOR GRAIN-BOUNDARY CHARACTERIZATION IN INHOMOGENEOUS MATERIALS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–161.</page>
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<author>GIBART, P., TROMSON-CARLI, A., MONTEIL, Y., & RUDRA, A.</author> <year>(1989).</year> <title>GROWTH ANISOTROPY AND REACTIONS MECHANISMS IN METAL ORGANICS VAPOR PHASE EPITAXY OF GaAs.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–529.</page>
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<author>GRABIEC, P. B., & PIETRUSZKO, S. M.</author> <year>(1989).</year> <title>AN INFLUENCE OF DOPING ON THE KINETICS OF BPSG DEPOSITION PROCESS AND THE PROPERTIES OF THE DEPOSITED LAYER.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–585.</page>
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<author>HAENNI, W., HINTERMANN, H. E., MOREL, D., & SIMMEN, A.</author> <year>(1989).</year> <title>TITANIA-COATINGS ON STRONGLY PASSIVATED SUBSTRATES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–401.</page>
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<author>HENOC, P., AKAMATSU, B., & MARTINS, R. B.</author> <year>(1989).</year> <title>CATHODOLUMINESCENCE IN DOUBLE HETEROJUNCTION LASERS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–73.</page>
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<author>HEUMEN, W. V., & HENDRIKS, M.</author> <year>(1989).</year> <title>QLTO, A CLASSICAL PROCESS STILL GOING STRONG.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–595.</page>
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<author>HILLEL, R., VIALA, J. C., LI, X. L., & BOUIX, J.</author> <year>(1989).</year> <title>TITANIUM-BASE COATINGS ON CERAMIC OXIDE SUBSTRATES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–693.</page>
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<author>HOLT, D. B.</author> <year>(1989).</year> <title>SEM MICROCHARACTERIZATION OF SEMICONDUCTORS BY EBIC AND CL.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–3.</page>
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<author>HOPPE, W., & KITTLER, M.</author> <year>(1989).</year> <title>ON THE TWO-DIMENSIONAL DETERMINATION OF p-n JUNCTIONS WITH THE EBIC COLLECTION PROBABILITY.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–182.</page>
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<author>HUBERT-PFALZGRAS, L. G.</author> <year>(1989).</year> <title>{MOLECULAR} {PRECURSORS} {FOR} {HIGH} Tc {SUPERCONDUCTORS} : {ALCOXIDES} {AND} $\upbeta$ {DIKETONATES} {OF} Ln {AND} {HEAVY} {MAIN} {GROUP} {ELEMENTS} (Ba, Bi, Pb).</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–738.</page>
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<author>IHLAL, A., & NOUET, G.</author> <year>(1989).</year> <title>EBIC MEASUREMENTS OF ANNEALED SILICON BICRYSTALS.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–157.</page>
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<author>JAKUBOWICZ, A.</author> <year>(1989).</year> <title>PROBLEMS ASSOCIATED WITH MODELLING OF RECOMBINATION AT DEFECTS, TEMPERATURE DEPENDENCE OF EBIC AND CL.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–145.</page>
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<author>JAUBERTEAU, J. L., BARATON, M. I., GERBIER, M., … CATHERINOT, A.</author> <year>(1989).</year> <title>AMORPHOUS SILICON NITRIDE THIN FILMS PERFORMED IN TWO PECVD EXPERIMENTAL DEVICES.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–657.</page>
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<author>KELDER, E. M., GOOSSENS, A., PUT, P. J. V. D., & SCHOONMAN, J.</author> <year>(1989).</year> <title>CHEMICAL VAPOUR DEPOSITION OF THIN FILMS IN THE SYSTEM B-P.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C5),</issue> <page>C5–567.</page>
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<author>KITTLER, M., & SEIFERT, W.</author> <year>(1989).</year> <title>MINORITY-CARRIER DIFFUSION LENGTH : MEASUREMENTS BY EBIC, CONNECTION TO MATERIALS MICROSTRUCTURE AND RELATION TO DEVICE PERFORMANCE.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–31.</page>
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<author>KRONEWITZ, J., & SCHRÖTER, W.</author> <year>(1989).</year> <title>IN SITU OBSERVATION OF DISLOCATION MOTION IN CdTe USING EBIC.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–166.</page>
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<author>KUHNERT, R.</author> <year>(1989).</year> <title>DOPING PROFILE INSPECTION IN SILICON BY LOW ACCELERATION VOLTAGE SEM-EBIC.</title> <container-title>Le Journal de Physique Colloques,</container-title> <volume>50</volume> <issue>(C6),</issue> <page>C6–185.</page>
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