Daily Papers

This definitive research memoria presents a comprehensive, mathematically verified paradigm for neural communication with Bitcoin mining Application-Specific Integrated Circuits (ASICs), integrating five complementary frameworks: thermodynamic reservoir computing, hierarchical number system theory, algorithmic analysis, network latency optimization, and machine-checked mathematical formalization. We establish that obsolete cryptocurrency mining hardware exhibits emergent computational properties enabling bidirectional information exchange between AI systems and silicon substrates. The research program demonstrates: (1) reservoir computing with NARMA-10 Normalized Root Mean Square Error (NRMSE) of 0.8661; (2) the Thermodynamic Probability Filter (TPF) achieving 92.19% theoretical energy reduction; (3) the Virtual Block Manager achieving +25% effective hashrate; and (4) hardware universality across multiple ASIC families including Antminer S9, Lucky Miner LV06, and Goldshell LB-Box. A significant contribution is the machine-checked mathematical formalization using Lean 4 and Mathlib, providing unambiguous definitions, machine-verified theorems, and reviewer-proof claims. Key theorems proven include: independence implies zero leakage, predictor beats baseline implies non-independence (the logical core of TPF), energy savings theoretical maximum, and Physical Unclonable Function (PUF) distinguishability witnesses. Vladimir Veselov's hierarchical number system theory explains why early-round information contains predictive power. This work establishes a new paradigm: treating ASICs not as passive computational substrates but as active conversational partners whose thermodynamic state encodes exploitable computational information.

Naturally occurring background radiation is a source of correlated decoherence events in superconducting qubits that will challenge error-correction schemes. To characterize the radiation environment in an unshielded laboratory, we performed broadband, spectroscopic measurements of background events in silicon substrates located inside a millikelvin refrigerator, an environment representative of superconducting qubit systems. We measured the background spectra in silicon substrates of two thicknesses, 0.5 mm and 1.5 mm, and obtained the average event rate and the integrated power deposition. In a 25 mm^2 area and the thinner substrate, these values are 0.023 events per second and 4.9 keV/s, counting events that deposit at least 40 keV. We find the background spectrum to be nearly featureless. Its intensity decreases by a factor of 40,000 between 100 keV and 3 MeV for silicon substrates 0.5 mm thick. We find the cryogenic measurements to be in good agreement with predictions based on measurements of the terrestrial gamma-ray flux, published models of cosmic-ray fluxes, a crude model of the cryostat, and radiation-transport simulations. No free parameters are required to predict the background spectra in the silicon substrates. The good agreement between measurements and predictions allow assessment of the relative contributions of terrestrial and cosmic background sources and their dependence on substrate thickness. Our spectroscopic measurements are performed with superconducting microresonators that transduce deposited energy to a readily detectable electrical signal. We find that gamma-ray emissions from radioisotopes are responsible for the majority of events depositing E<1.5 MeV, while nucleons among the cosmic-ray secondary particles cause most events that deposit more energy. These results suggest several paths to reducing the impact of background radiation on quantum circuits.

The rapid advancement of Large Language Models (LLMs) has established language as a core general-purpose cognitive substrate, driving the demand for specialized Language Processing Units (LPUs) tailored for LLM inference. To overcome the growing energy consumption of LLM inference systems, this paper proposes a Hardwired-Neurons Language Processing Unit (HNLPU), which physically hardwires LLM weight parameters into the computational fabric, achieving several orders of magnitude computational efficiency improvement by extreme specialization. However, a significant challenge still lies in the scale of modern LLMs. An ideal estimation on hardwiring gpt-oss 120 B requires fabricating at least 6 billion dollars of photomask sets, rendering the straightforward solution economically impractical. Addressing this challenge, we propose the novel Metal-Embedding methodology. Instead of embedding weights in a 2D grid of silicon device cells, Metal-Embedding embeds weight parameters into the 3D topology of metal wires. This brings two benefits: (1) a 15x increase in density, and (2) 60 out of 70 layers of photomasks are made homogeneous across chips, including all EUV photomasks. In total, Metal-Embedding reduced the photomask cost by 112x, bringing the Non-Recurring Engineering (NRE) cost of HNLPU into an economically viable range. Experimental results show that HNLPU achieved 249,960 tokens/s (5,555x/85x of GPU/WSE), 36 tokens/J (1,047x/283x of GPU/WSE), 13,232 mm2 total die area (29% inscribed rectangular area in a 300 mm wafer), \$184M estimated NRE at 5 nm technology. Analysis shows that HNLPU achieved 8.57x cost-effectiveness and 230x carbon footprint reduction compared to H100 clusters, under an annual weight updating assumption.

We propose a theoretical framework--Holographic Reservoir Computing (HRC)--which hypothesizes that the thermodynamic noise and timing dynamics in voltage-stressed Bitcoin mining ASICs (BM1366) could potentially serve as a physical reservoir computing substrate. We present the CHIMERA (Conscious Hybrid Intelligence via Miner-Embedded Resonance Architecture) system architecture, which treats the SHA-256 hashing pipeline not as an entropy source, but as a deterministic diffusion operator whose timing characteristics under controlled voltage and frequency conditions may exhibit computationally useful dynamics. We report preliminary observations of non-Poissonian variability in inter-arrival time statistics during edge-of-stability operation, which we term the "Silicon Heartbeat" hypothesis. Theoretical analysis based on Hierarchical Number System (HNS) representations suggests that such architectures could achieve O(log n) energy scaling compared to traditional von Neumann O(2^n) dependencies. However, we emphasize that these are theoretical projections requiring experimental validation. We present the implemented measurement infrastructure, acknowledge current limitations, and outline the experimental program necessary to confirm or refute these hypotheses. This work contributes to the emerging field of thermodynamic computing by proposing a novel approach to repurposing obsolete cryptographic hardware for neuromorphic applications.

This position and survey paper identifies the emerging convergence of neuroscience, artificial general intelligence (AGI), and neuromorphic computing toward a unified research paradigm. Using a framework grounded in brain physiology, we highlight how synaptic plasticity, sparse spike-based communication, and multimodal association provide design principles for next-generation AGI systems that potentially combine both human and machine intelligences. The review traces this evolution from early connectionist models to state-of-the-art large language models, demonstrating how key innovations like transformer attention, foundation-model pre-training, and multi-agent architectures mirror neurobiological processes like cortical mechanisms, working memory, and episodic consolidation. We then discuss emerging physical substrates capable of breaking the von Neumann bottleneck to achieve brain-scale efficiency in silicon: memristive crossbars, in-memory compute arrays, and emerging quantum and photonic devices. There are four critical challenges at this intersection: 1) integrating spiking dynamics with foundation models, 2) maintaining lifelong plasticity without catastrophic forgetting, 3) unifying language with sensorimotor learning in embodied agents, and 4) enforcing ethical safeguards in advanced neuromorphic autonomous systems. This combined perspective across neuroscience, computation, and hardware offers an integrative agenda for in each of these fields.

We present a 380-520 GHz balanced superconductor-insulator-superconductor (SIS) mixer on a single silicon substrate. All radio-frequency (RF) circuit components are fabricated on a 9 μm thick membrane. The intermediate frequency (IF) is separately amplified and combined. The balanced mixer chip, using Nb/Al/Al_{2}O_{3}/Nb SIS junctions, is mounted in a tellurium copper waveguide block at 4.2 K using Au beam lead contacts. We find uncorrected minimum receiver double-sideband noise temperatures of 70 K and a noise suppression of up to 18 dB, measured within a 440-495 GHz RF and a 4-8 GHz IF bandwidth, representing state-of-the-art device performance.

Quality of epitaxial films strongly depends on their structural and chemical match with the substrates: the more closely they match, the better the film quality is. Topological insulators (TI) such as Bi2Se3 thin films are of no exception. However, there do not exist commercial substrates that match with TI films both structurally and chemically, at the level commonly available for other electronic materials. Here, we introduce BiInSe3 bulk crystal as the best substrate for Bi2Se3 thin films. These films exhibit superior surface morphology, lower defect density and higher Hall mobility than those on other substrates, due to structural and chemical match provided by the BiInSe3 substrate. BiInSe3 substrate could accelerate the advance of TI research and applications.

The goal of this work is a scientifically justified choice of efficient technological parameters of anodic bonding of silicon to glass, ensuring a minimum level of residual stresses. The relevance of this dissertation is determined by the continuous efforts to reduce the negative effects of the joint use of dissimilar materials in electronic devices. Theoretical and practical results: the temperature dependence of the true values of the coefficient of thermal expansion of popular glass brands in the temperature range from minus 100 °C to 500 °C were obtained; the ratio of thicknesses of silicon and glass that minimizes residual stress on the silicon surface was calculated; the technique of minimizing the residual stresses in silicon anodically bonded to glass was developed. Results of this research are applicable to MEMS devices design and simulations. The first chapter provides the analysis of the current state of research in the field of anodic bonding technology application. The second chapter is devoted to the experimental study of temperature dependence of the linear thermal expansion coefficient of the glass. Thermomechanical properties and composition of the following glass brands: LK5, Schott Borofloat 33, Corning 7740, Hoya SD-2 were measured. The third chapter describes the existing models of estimating the residual stresses in the silicon-glass bonds. Two models based on a theory of strength of materials and the classical lamination theory with an additional temperature dependence of coefficients of thermal expansion are proposed for further use. Residual stresses in silicon-glass bonds are estimated with these models and data from the preceding chapter. The fourth chapter describes the experiments carried out to confirm claims from the previous chapters. The proposed technique of minimizing residual stresses is described as steps for a device designer.

Continuous solid electrolyte interface (SEI) formation remains the limiting factor of the lifetime of silicon nanoparticles (SiNPs) based negative electrodes. Methods that could provide clear diagnosis of the electrode degradation are of utmost necessity to streamline further developments. We demonstrate that electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) can be used to quickly map SEI components and quantify LixSi alloys from single experiments, with resolutions down to 5 nm. Exploiting the low-loss part of the EEL spectrum allowed us to circumvent the degradation phenomena that have so far crippled the application of this technique on such beam-sensitive compounds. Our results provide unprecedented insight into silicon aging mechanisms in full cell configuration. We observe the morphology of the SEI to be extremely heterogeneous at the particle scale but with clear chemical evolutions with extended cycling coming from both SEI accumulation and a transition from lithium-rich carbonate-like compounds to lithium-poor ones. Thanks to the retrieval of several results from a single dataset, we were able to correlate local discrepancies in lithiation to the initial crystallinity of silicon as well as to the local SEI chemistry and morphology. This study emphasizes how initial heterogeneities in the percolating electronic network and the porosity affect SiNPs aggregates along cycling. These findings pinpoint the crucial role of an optimized formulation in silicon-based thick electrodes.

The residual stress induced in assembly is a common concern in electronic packaging. The mismatch in coefficient of thermal expansion between borosilicate glass and silicon, upon temperature variation, generates an internal stress state. This affects important characteristics of microelectromechanical devices or constituent elements. Such as self frequence or stiffness. Stresses caused by thermal expansion coefficients mismatch of anodically bonded glass and silicon samples are studied in this paper. Stress calculation based on lamination theory is presented. Usage examples of such calculations are described. For bonded silicon and LK-5 glass several results of calculations are presented. Stress distribution in bonded silicon and glass of several thicknesses is evaluated. Stress distribution in bonded glass-silicon-glass structure is evaluated. Bonded silicon surface stress dependence of glass to silicon wafer thickness ratio is evaluated. Experimental study of thermal mismatch stress in glass based on birefringence phenomenon was conducted. It's results are presented in this paper. Keywords: anodic bonding, field assisted bonding, thermal expansion, stress.

The most widely used method for obtaining high-quality two-dimensional materials is through mechanical exfoliation of bulk crystals. Manual identification of suitable flakes from the resulting random distribution of crystal thicknesses and sizes on a substrate is a time-consuming, tedious task. Here, we present a platform for fully automated scanning, detection, and classification of two-dimensional materials, the source code of which we make openly available. Our platform is designed to be accurate, reliable, fast, and versatile in integrating new materials, making it suitable for everyday laboratory work. The implementation allows fully automated scanning and analysis of wafers with an average inference time of 100 ms for images of 2.3 Mpixels. The developed detection algorithm is based on a combination of the flakes' optical contrast toward the substrate and their geometric shape. We demonstrate that it is able to detect the majority of exfoliated flakes of various materials, with an average recall (AR50) between 67% and 89%. We also show that the algorithm can be trained with as few as five flakes of a given material, which we demonstrate for the examples of few-layer graphene, WSe_2, MoSe_2, CrI_3, 1T-TaS_2 and hexagonal BN. Our platform has been tested over a two-year period, during which more than 10^6 images of multiple different materials were acquired by over 30 individual researchers.

Atomic layer deposition (ALD) is widely studied for numerous applications and is commercially employed in the semiconductor industry, where planar substrates are the norm. However, the inherent ALD feature of coating virtually any surface geometry with atomistic thickness control is equally attractive for coating particulate materials (supports). In this review, we provide a comprehensive overview of the developments in this decades-old field of ALD on particulate materials, drawing on a bottom-up and quantitative analysis of 799 articles from this field. The obtained dataset is the basis for abstractions regarding reactor types (specifically for particles), coating materials, reactants, supports and processing conditions. Furthermore, the dataset enables direct access to specific processing conditions (for a given material, surface functionality, application etc.) and increases accessibility of the respective literature. We also review fundamental concepts of ALD on particles, and discuss the most common applications, i.e., catalysis (thermo-, electro-, photo-), batteries, luminescent phosphors and healthcare. Finally, we identify historical trends, and provide an outlook on prospective developments.

Two critical limitations of organic-inorganic lead halide perovskite materials for solar cells are their poor stability in humid environments and inclusion of toxic lead. In this study, high-throughput density functional theory (DFT) methods are used to computationally model and screen 1845 halide perovskites in search of new materials without these limitations that are promising for solar cell applications. This study focuses on finding materials that are comprised of nontoxic elements, stable in a humid operating environment, and have an optimal bandgap for one of single junction, tandem Si-perovskite, or quantum dot-based solar cells. Single junction materials are also screened on predicted single junction photovoltaic (PV) efficiencies exceeding 22.7%, which is the current highest reported PV efficiency for halide perovskites. Generally, these methods qualitatively reproduce the properties of known promising nontoxic halide perovskites that have either been experimentally evaluated or predicted from theory. From a set of 1845 materials, 15 materials pass all screening criteria for single junction cell applications, 13 of which have not been previously investigated, such as (CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3, ((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3. These materials, together with others predicted in this study, may be promising candidate materials for stable, highly efficient, and non-toxic perovskite-based solar cells.

During electrostatic bonding, also known as anodic bonding, silicon is bonded to glass by applying an external voltage and simultaneous heating to temperatures of 200...450 °C. While cooling to working temperature after bonding happened pieces are mutually deformed. Due to linear thermal expansion coefficients mismatch of anodically bonded glass and silicon samples an internal stress state is generated. Such stresses are called thermal mismatch stresses. The aim of this paper is a determination of technological and design solutions to achieve minimal thermal mismatch stresses in resulting bond. The nonlinear dependence of linear thermal expansion coefficients of bonded samples' materials on temperature makes it difficult to minimize thermal mismatch stresses by chosing materials with close average thermal expansion coefficients in particular temperature range. To assess means of lowering thermal mismatch stress in this paper two different ways to describe assembly are used: two thin bonded layers and multilayered composite material. Based on properties of two brands of glass (LK5, Borofloat 33) and silicon used with described mathematical models thermal mismatch stresses at temperature T_w in samples bonded at several different temperatures T_b are evaluated. Bonded silicon surface stress dependence of glass to silicon wafer thickness ratio is evaluated. Based on such evaluations one can say that by varying thickness of glass bonded to silicon one can obtain zero thermal mismatch stress at a particular depth of material or obtain stress of some defined value at this depth. Models of assembly description used in this paper can be used to optimize anodic bonding process parameters. Such usage aimed to minimize thermal mismatch stresses at device working temperatures is presented in this paper.

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.

CONSPECTUS: Two-dimensional (2D) compound materials are promising materials for use in electronics, optoelectronics, flexible devices, etc. because they are ultrathin and cover a wide range of properties. Among all methods to prepare 2D materials, chemical vapor deposition (CVD) is promising because it produces materials with a high quality and reasonable cost. So far, much efforts have been made to produce 2D compound materials with large domain size, controllable number of layers, fast-growth rate, and high quality features, etc. However, due to the complicated growth mechanism like sublimation and diffusion processes of multiple precursors, maintaining the controllability, repeatability, and high quality of CVD grown 2D binary and ternary materials is still a big challenge, which prevents their widespread use. Here, taking 2D transition metal dichalcogenides (TMDCs) as examples, we review current progress and highlight some promising growth strategies for the growth of 2D compound materials. The key technology issues which affect the CVD process, including non-metal precursor, metal precursor, substrate engineering, temperature, and gas flow, are discussed. Also, methods in improving the quality of CVD-grown 2D materials and current understanding on their growth mechanism are highlighted. Finally, challenges and opportunities in this field are proposed. We believe this review will guide the future design of controllable CVD systems for the growth of 2D compound materials with good controllability and high quality, laying the foundations for their potential applications.

Precision in identifying nanometer-scale device-killer defects is crucial in both semiconductor research and development as well as in production processes. The effectiveness of existing ML-based approaches in this context is largely limited by the scarcity of data, as the production of real semiconductor wafer data for training these models involves high financial and time costs. Moreover, the existing simulation methods fall short of replicating images with identical noise characteristics, surface roughness and stochastic variations at advanced nodes. We propose a method for generating synthetic semiconductor SEM images using a diffusion model within a limited data regime. In contrast to images generated through conventional simulation methods, SEM images generated through our proposed DL method closely resemble real SEM images, replicating their noise characteristics and surface roughness adaptively. Our main contributions, which are validated on three different real semiconductor datasets, are: i) proposing a patch-based generative framework utilizing DDPM to create SEM images with intended defect classes, addressing challenges related to class-imbalance and data insufficiency, ii) demonstrating generated synthetic images closely resemble real SEM images acquired from the tool, preserving all imaging conditions and metrology characteristics without any metadata supervision, iii) demonstrating a defect detector trained on generated defect dataset, either independently or combined with a limited real dataset, can achieve similar or improved performance on real wafer SEM images during validation/testing compared to exclusive training on a real defect dataset, iv) demonstrating the ability of the proposed approach to transfer defect types, critical dimensions, and imaging conditions from one specified CD/Pitch and metrology specifications to another, thereby highlighting its versatility.

Freestanding thin films, a class of low-dimensional materials capable of maintaining structural integrity without substrates, have emerged as a forefront research focus. Their unique advantages-circumventing substrate clamping, liberating intrinsic material properties, and enabling cross-platform heterogeneous integration-underpin this prominence. This review systematically summarizes core fabrication techniques, including physical delamination (e.g., laser lift-off, mechanical exfoliation) and chemical etching, alongside associated transfer strategies. It further explores the induced strain modulation mechanisms, extreme mechanical properties and interface decoupling effects enabled by these films. Representative case studies demonstrate breakthrough applications in flexible/ultrathin electronics, ultrahigh-sensitivity sensors and the exploration of novel quantum states. Critical challenges regarding scalable fabrication, precise interface control, and long-term stability are analyzed, concluding with prospects for emerging applications in bio-inspired intelligent devices, quantum precision sensing, and brain-inspired neural networks.

Stresses caused by thermal expansion coefficients mismatch of anodically bonded glass and silicon samples are studied. An analytical model to determine graphically the optimum bonding temperature is presented. It is essentially a model for thin-film stress but uses integration of the linear coefficient of thermal expansion difference between the bonding temperature and the working temperature. Recommendations for choosing the bonding temperature of silicon to two brands of glass (Corning 7740 and LK5) are made. Keywords: anodic bonding, field assisted bonding, thermal expansion, stress.

We demonstrate the capability of block-copolymer templating to tune the refractive indices of functional oxides over a broad range by structuring materials on the 20-1000 atoms scale, with simple one-pot synthesis. The presented method is then combined with genetic algorithm-based optimization to explore its application for anti-reflection coating design. Merging these techniques allows for the realization of a minimal two-layer anti-reflection stack for silicon with broadband reflectivity of just 3% from the nominal value of 38%, over a 120° angular span, validated by fabrication followed by optical measurements.

Magnetron sputtering has also been used to deposit thin films of some materials and it has significant technological importance. A modeling on deposition of epitaxial thin films of Yttrium Stabilized Zirconia (YSZ) was done the diffusion of adatom on the surface were studies. There exists a strong interaction of ions formed in the plasma during the sputtering process. Cu thin films were deposited on Si. Nanocomposite thin film of SiCN showed dendritic growth.

With the decreasing sizes of integrated-circuit components, the semiconductor industry is in growing need of high-throughput strain mapping techniques that offer high precision and spatial resolution, with desired industry goals of 0.01-0.1% and 1 nm respectively. As the fundamental limitation on the measurement precision is set by the Poisson noise, pixel array detectors with high saturation current, high dynamic range and fast readout are ideally suited for this purpose. However, due to the limited pixel count on these detectors, they do not work well with traditional strain mapping algorithms that were optimized to work on datasets with a large pixel count. Here, we evaluate the cepstral transform that was designed to address this problem, with the precision determined by the convergence, collection angles and dose while remaining insensitive to the pixel count. We test the performance of our method on silicon wedges and Si-SiGe multilayers, and using datasets collected at different conditions, we show how the measured strain precision scales as a function of dose, aperture size and sample thickness. Using precession gives a further improvement in precision by about 1.5-2x, whereas energy filtering does not have a significant impact on the cepstral method for device-relevant sample thickness ranges.

Perovskite solar cells (PSCs) have rapidly emerged as a leading contender in next-generation photovoltaic technologies, owing to their exceptional power conversion efficiencies and advantageous material properties. Despite these advances, challenges such as long-term stability, environmental sustainability, and scalable manufacturing continue to hinder their commercialization. Precursor additive engineering has shown promise in addressing these issues by enhancing both the performance and durability of PSCs. However, the explosive growth of scientific literature and the complex interplay of materials, processes, and device architectures make it increasingly difficult for researchers to efficiently access, organize, and utilize domain knowledge in this rapidly evolving field. To address this gap, we introduce Perovskite-R1, a specialized large language model (LLM) with advanced reasoning capabilities tailored for the discovery and design of PSC precursor additives. By systematically mining and curating 1,232 high-quality scientific publications and integrating a comprehensive library of 33,269 candidate materials, we constructed a domain-specific instruction-tuning dataset using automated question-answer generation and chain-of-thought reasoning. Fine-tuning the QwQ-32B model on this dataset resulted in Perovskite-R1, which can intelligently synthesize literature insights and generate innovative and practical solutions for defect passivation and the selection of precursor additives. Experimental validation of several model-proposed strategies confirms their effectiveness in improving material stability and performance. Our work demonstrates the potential of domain-adapted LLMs in accelerating materials discovery and provides a closed-loop framework for intelligent, data-driven advancements in perovskite photovoltaic research.

Inverse design of RF passive components from S-parameters is a high-dimensional, ill-posed problem, and prior generative approaches are limited to single-layer binary-metallization structures. This paper presents an inverse design approach that generates passive components from partial S-parameter inputs on an 8times8 mm board discretized at 64times64 pixels with sub-pixel grayscale metallization across 1-20 GHz. The framework generates two-layer copper layouts with vias, with hard physical constraints on feed locations enforced through annealed Langevin projection, flexible multi-modal conditioning on partial S-parameter specifications, port locations, dielectric properties, reference topology, and variable port placement. Candidate designs are generated in seconds, with surrogate-predicted S-parameters matching targets to within 0.77 pm 1.28 dB weighted mean absolute error. We validate the approach with two fabricated designs on RO4003C: a manufacturable alternative to a hairpin filter whose coupling gaps violate fabrication rules, and a combline bandpass filter designed from scratch given only target S-parameters.

The development of selective high precision chemical functionalization strategies for device fabrication, in conjunction with associated techniques for patterning graphene wafers with atomic accuracy would provide the necessary basis for a post-CMOS manufacturing technology. This requires a thorough understanding of the principles governing the reactivity and patterning of graphene at the sub-nanometer length scale. This article reviews our quest to delineate the principles of graphene chemistry - that is, the chemistry at the Dirac point and beyond, and the effect of covalent chemistry on the electronic structure, electrical transport and magnetic properties of this low-dimensional material in order to enable the scalable production of graphene-based devices for low- and high-end technology applications.

The chips contained in any electronic device are manufactured over circular silicon wafers, which are monitored by inspection machines at different production stages. Inspection machines detect and locate any defect within the wafer and return a Wafer Defect Map (WDM), i.e., a list of the coordinates where defects lie, which can be considered a huge, sparse, and binary image. In normal conditions, wafers exhibit a small number of randomly distributed defects, while defects grouped in specific patterns might indicate known or novel categories of failures in the production line. Needless to say, a primary concern of semiconductor industries is to identify these patterns and intervene as soon as possible to restore normal production conditions. Here we address WDM monitoring as an open-set recognition problem to accurately classify WDM in known categories and promptly detect novel patterns. In particular, we propose a comprehensive pipeline for wafer monitoring based on a Submanifold Sparse Convolutional Network, a deep architecture designed to process sparse data at an arbitrary resolution, which is trained on the known classes. To detect novelties, we define an outlier detector based on a Gaussian Mixture Model fitted on the latent representation of the classifier. Our experiments on a real dataset of WDMs show that directly processing full-resolution WDMs by Submanifold Sparse Convolutions yields superior classification performance on known classes than traditional Convolutional Neural Networks, which require a preliminary binning to reduce the size of the binary images representing WDMs. Moreover, our solution outperforms state-of-the-art open-set recognition solutions in detecting novelties.

Shrinking pattern dimensions leads to an increased variety of defect types in semiconductor devices. This has spurred innovation in patterning approaches such as Directed self-assembly (DSA) for which no traditional, automatic defect inspection software exists. Machine Learning-based SEM image analysis has become an increasingly popular research topic for defect inspection with supervised ML models often showing the best performance. However, little research has been done on obtaining a dataset with high-quality labels for these supervised models. In this work, we propose a method for obtaining coherent and complete labels for a dataset of hexagonal contact hole DSA patterns while requiring minimal quality control effort from a DSA expert. We show that YOLOv8, a state-of-the-art neural network, achieves defect detection precisions of more than 0.9 mAP on our final dataset which best reflects DSA expert defect labeling expectations. We discuss the strengths and limitations of our proposed labeling approach and suggest directions for future work in data-centric ML-based defect inspection.

Processing results of measurements of linear thermal expansion coefficients and linear thermal expansion of two brands of borosilicate glasses --- LK5 and Borofloat 33 --- are presented. The linear thermal expansion of glass samples have been determined in the temperature range 130 to 800 K (minus 143 to 526 °C) using thermomechanical analyzer TMA7100. Relative imprecision of indirectly measured linear thermal expansion coefficients and linear thermal expansion of both glass brands is less than pm5 % and pm3 % respectively. Polynomial equations, approximating temperature dependence of obtained measurements, are presented. The results will facilitate the modeling of the characteristics of the devices which are used in microsystems engineering and fabricated by anodic bonding of silicon to glass, they can also be used to optimize the temperature regime of silicon to glass bonding process. Keywords: linear expansion, thermal expansion coefficient, thermomechanical analysis, borosilicate glass.

This survey paper offers a comprehensive review of methodologies utilizing machine learning (ML) classification techniques for identifying wafer defects in semiconductor manufacturing. Despite the growing body of research demonstrating the effectiveness of ML in wafer defect identification, there is a noticeable absence of comprehensive reviews on this subject. This survey attempts to fill this void by amalgamating available literature and providing an in-depth analysis of the advantages, limitations, and potential applications of various ML classification algorithms in the realm of wafer defect detection. An innovative taxonomy of methodologies that we present provides a detailed classification of algorithms into more refined categories and techniques. This taxonomy follows a three-tier structure, starting from broad methodology categories and ending with specific techniques. It aids researchers in comprehending the complex relationships between different algorithms and their techniques. We employ a rigorous empirical and experimental evaluation to rank these varying techniques. For the empirical evaluation, we assess techniques based on a set of five criteria. The experimental evaluation ranks the algorithms employing the same techniques, sub-categories, and categories. Also the paper illuminates the future prospects of ML classification techniques for wafer defect identification, underscoring potential advancements and opportunities for further research in this field

Lack of rigorous reproducibility and validation are major hurdles for scientific development across many fields. Materials science in particular encompasses a variety of experimental and theoretical approaches that require careful benchmarking. Leaderboard efforts have been developed previously to mitigate these issues. However, a comprehensive comparison and benchmarking on an integrated platform with multiple data modalities with both perfect and defect materials data is still lacking. This work introduces JARVIS-Leaderboard, an open-source and community-driven platform that facilitates benchmarking and enhances reproducibility. The platform allows users to set up benchmarks with custom tasks and enables contributions in the form of dataset, code, and meta-data submissions. We cover the following materials design categories: Artificial Intelligence (AI), Electronic Structure (ES), Force-fields (FF), Quantum Computation (QC) and Experiments (EXP). For AI, we cover several types of input data, including atomic structures, atomistic images, spectra, and text. For ES, we consider multiple ES approaches, software packages, pseudopotentials, materials, and properties, comparing results to experiment. For FF, we compare multiple approaches for material property predictions. For QC, we benchmark Hamiltonian simulations using various quantum algorithms and circuits. Finally, for experiments, we use the inter-laboratory approach to establish benchmarks. There are 1281 contributions to 274 benchmarks using 152 methods with more than 8 million data-points, and the leaderboard is continuously expanding. The JARVIS-Leaderboard is available at the website: https://pages.nist.gov/jarvis_leaderboard

This study investigates the impact of surface functionalization, oil coating, and oil absorption on droplet impact behavior on textured polydimethylsiloxane(PDMS) substrates. The textured surfaces were fabricated with square micro-posts having spacings of 5 and 20 microns. The PDMS samples were functionalized with octadecyltrichlorosilane (OTS) to improve water repellency. Following, the surfaces were either coated with or allowed to absorb two different lubricants, silicone oil (SO-5cSt) and hexadecane. We performed detailed wetting measurements on both untreated and OTS-functionalized substrates. These measurements provided useful insights into how water and lubricants were retained and distributed under static conditions. High-speed imaging was used to capture droplet impact across a range of Weber numbers. On SO-5cSt-absorbed substrates, droplets consistently showed complete rebound at all Weber numbers, regardless of post spacing. This robust rebound was attributed to the oil's ability to fill the gaps between the posts through capillary action, while also forming a stable lubricating layer above the texture. This thin oil film reduced friction between the droplet and the surface, enabling the droplet to retain sufficient energy for complete rebound. In contrast, hexadecane-absorbed substrates displayed different dynamics. At low Weber numbers, only partial rebound was observed, while at intermediate values, droplets rebounded completely. However, droplets no longer rebounded at higher Weber numbers and remained deposited. Repeated droplet impacts further demonstrated that hexadecane-infused surfaces gradually lost oil from the textured gaps, resulting in a decline in rebound performance over time. This effect was not observed with SO-5cSt, underscoring the importance of lubricant affinity and stability.

Molecular ferroelectric materials have attracted widespread attention due to their abundant chemical diversity, structural tunability, low synthesis temperature, and high flexibility. Meanwhile, the integration of molecular ferroelectric materials and Si is still challenging, while the fundamental understanding of the ferroelectric switching process is still lacking. Herein, we have successfully synthesized the imidazole perchlorate (ImClO4) single crystals and a series of high-quality highly-oriented thin films on a Si substrate. A high inverse piezoelectric coefficient (55.7 pm/V) is demonstrated for the thin films. Two types of domain bands can be observed (in the size of a few microns): type-I band tilts ~60{\deg} with respect to the horizontal axis, while the type-II band is perpendicular to the horizontal axis. Most of the domain walls (DWs) are 180{\deg} DWs for the two bands, while some 109{\deg} DWs can also be observed. Interestingly, the DWs in type-I band are curved, charged domain walls; while the 180{\deg} DWs in type-II band are straight, noncharged domain walls. After applying +20 V for 5 s through a PFM tip, the 180{\deg} DWs in type-I band shrink first, then disconnect from the band boundary, forming a needle-like domain with a size of ~100 nm. The needle-like domain will extend toward the band boundary after an inverse bias is applied (-20 V), and expand along the band boundary after touching the boundary. Whereas for the type-II domain band, the 180{\deg} DWs are more mobile than the 109{\deg} domain walls, which displaces ~500 nm after applying +20 V. While such displacement is much shorter after the application of a negative bias for the same duration, starting from the positively poled sample. We hope to spur further interest in the on-chip design of the molecular ferroelectrics based electronic devices.

The thermal noise of mirror coatings for gravitational-wave detectors critically depends on the elastic properties of the constituent materials. Data analyses and theoretical models typically assume each material is homogeneous and isotropic, but isotropy has never been explicitly verified. Using Brillouin light scattering (BLS), we demonstrate for the first time that ion-beam-sputtered SiO2 -- a material still viable for future mirror coatings -- exhibits cylindrical elastic symmetry, with in-plane isotropy but a notable 6% compressive anisotropy along the film normal. This anisotropy remains unchanged after the post-deposition heat treatment currently used in ground-based detectors (500 ^circC, 10 h) but is nearly eliminated at 900 ^circC. Infrared reflectivity experiments support these findings by directly revealing heterogeneities in the distribution of bridging and non-bridging oxygen structures along the growth axis. While BLS measures the real part of the elastic constants at GHz frequencies, the data reveal negligible contributions from mechanical relaxations in the kHz-GHz range, making BLS a valid substitute for low-frequency properties obtained from standard anisotropy-insensitive techniques. Our results highlight that restoring isotropy through heat treatment -- by softening the material, enabling more than 7% out-of-plane expansion, and smoothing out structural heterogeneities -- may play a key role in reducing thermal noise. This proof-of-concept study extends beyond silica, providing critical insights for the design of future coatings.

As the globalization of semiconductor design and manufacturing processes continues, the demand for defect detection during integrated circuit fabrication stages is becoming increasingly critical, playing a significant role in enhancing the yield of semiconductor products. Traditional wafer map defect pattern detection methods involve manual inspection using electron microscopes to collect sample images, which are then assessed by experts for defects. This approach is labor-intensive and inefficient. Consequently, there is a pressing need to develop a model capable of automatically detecting defects as an alternative to manual operations. In this paper, we propose a method that initially employs a pre-trained VAE model to obtain the fault distribution information of the wafer map. This information serves as guidance, combined with the original image set for semi-supervised model training. During the semi-supervised training, we utilize a teacher-student network for iterative learning. The model presented in this paper is validated on the benchmark dataset WM-811K wafer dataset. The experimental results demonstrate superior classification accuracy and detection performance compared to state-of-the-art models, fulfilling the requirements for industrial applications. Compared to the original architecture, we have achieved significant performance improvement.

We present a low-cost ultraviolet to infrared absolute quantum efficiency detector characterization system developed using commercial off-the-shelf components. The key components of the experiment include a light source,a regulated power supply, a monochromator, an integrating sphere, and a calibrated photodiode. We provide a step-by-step procedure to construct the photon and quantum efficiency transfer curves of imaging sensors. We present results for the GSENSE 2020 BSI CMOS sensor and the Sony IMX 455 BSI CMOS sensor. As a reference for similar characterizations, we provide a list of parts and associated costs along with images of our setup.

Raman spectroscopy is a key tool for graphene characterization, yet its application to graphene grown on silicon carbide (SiC) is strongly limited by the intense and variable second-order Raman response of the substrate. This limitation is critical for buffer layer graphene, a semiconducting interfacial phase, whose vibrational signatures are overlapped with the SiC background and challenging to be reliably accessed using conventional reference-based subtraction, due to strong spatial and experimental variability of the substrate signal. Here we present SpectraFormer, a transformer-based deep learning model that reconstructs the SiC Raman substrate contribution directly from post-growth partially masked spectroscopic data without relying on explicit reference measurements. By learning global correlations across the entire Raman shift range, the model captures the statistical structure of the SiC background and enables accurate reconstruction of its contribution in mixed spectra. Subtraction of the reconstructed substrate signal reveals weak vibrational features associated with ZLG that are inaccessible through conventional analysis methods. The extracted spectra are validated by ab initio vibrational calculations, allowing assignment of the resolved features to specific modes and confirming their physical consistency. By leveraging a state-of-the-art attention-based deep learning architecture, this approach establishes a robust, reference-free framework for Raman analysis of graphene on SiC and provides a foundation, compatible with real-time data acquisition, to its integration into automated, closed-loop AI-assisted growth optimization.

A systematic understanding of Apple Silicon is lacking in the current landscape of hardware efficiency; research focus is largely centered on accelerating GPUs for large-scale training or inference on CUDA devices. This paper investigates Apple Silicon's unique memory architecture that offers a unified memory integrating CPU and GPU memory and its implications for on-device LLM inference. We decipher myths about whether Apple Silicon is efficient for on-device inference compared to competitors such as NVIDIA GPUs by directly conducting latency and throughput comparison benchmarks. We explain the performance gap between them through profiling low level hardware metrics - ALU utilization, memory bandwidth, buffer usage, cache residency etc. at runtime. We draw several insights regarding performance bottlenecks such as dequantization overhead, compute throughput and memory bandwidth. We debunk existing false claims regarding large language model inference such as compressing models to lower bit precision is a defacto promise for faster inference across all hardware platforms. We find that the large unified memory enables Apple Silicon to be both cost effective and efficient against NVIDIA GPUs for ultra large language models. Our large scale evaluation on 5 hardware testbeds incorporating three Apple M-series devices: M2 Ultra, M2 Max and M4 Pro and two NVIDIA GPUs: NVIDIA RTX A6000, a multi GPU setup with 2xNVIDIA RTX A6000, 5 model scales ranging from 8B to 405B parameters and 14 quantization schemes gives an understanding of how Apple Silicon fits within the paradigm of on-device LLM inference. Our analysis reveals multiple resource interdependencies and unexpected findings, while also quantifying established insights. To the best of our knowledge, this study makes the first attempt to present a thorough characterization and analysis of Apple Silicon for on-device inference.

Social scientists are now using large language models to create "silicon samples" - synthetic datasets intended to stand in for human respondents, aimed at revolutionising human subjects research. However, there are many analytic choices which must be made to produce these samples. Though many of these choices are defensible, their impact on sample quality is poorly understood. I map out these analytic choices and demonstrate how a very small number of decisions can dramatically change the correspondence between silicon samples and human data. Configurations (N = 252) varied substantially in their capacity to estimate (i) rank ordering of participants, (ii) response distributions, and (iii) between-scale correlations. Most critically, configurations were not consistent in quality: those that performed well on one dimension often performed poorly on another, implying that there is no "one-size-fits-all" configuration that optimises the accuracy of these samples. I call for greater attention to the threat of analytic flexibility in using silicon samples.

The search for low-cost, durable, and effective catalysts is essential for green hydrogen production and carbon dioxide upcycling to help in the mitigation of climate change. Discovery of new catalysts is currently limited by the gap between what AI-accelerated computational models predict and what experimental studies produce. To make progress, large and diverse experimental datasets are needed that are reproducible and tested at industrially-relevant conditions. We address these needs by utilizing a comprehensive high-throughput characterization and experimental pipeline to create the Open Catalyst Experiments 2024 (OCX24) dataset. The dataset contains 572 samples synthesized using both wet and dry methods with X-ray fluorescence and X-ray diffraction characterization. We prepared 441 gas diffusion electrodes, including replicates, and evaluated them using zero-gap electrolysis for carbon dioxide reduction (CO_2RR) and hydrogen evolution reactions (HER) at current densities up to 300 mA/cm^2. To find correlations with experimental outcomes and to perform computational screens, DFT-verified adsorption energies for six adsorbates were calculated on sim20,000 inorganic materials requiring 685 million AI-accelerated relaxations. Remarkably from this large set of materials, a data driven Sabatier volcano independently identified Pt as being a top candidate for HER without having any experimental measurements on Pt or Pt-alloy samples. We anticipate the availability of experimental data generated specifically for AI training, such as OCX24, will significantly improve the utility of computational models in selecting materials for experimental screening.

Amortized neural inverse design typically remains closed-world: component choices are fixed vocabulary tokens, coordinate grids are frozen at training time, and continuous variables are discretized into sequence tokens. Multilayer optical coatings are an industrially important instance, coupling material sequence, layer thickness and wavelength-dependent response. We present IrisFlow, a query-based, open-vocabulary flow-matching framework instantiated in coatings: the target reflectance/transmittance spectrum, wavelength grid, candidate-material optical constants and layer count are supplied at query time. Candidate materials enter as wavelength-aware optical tokens rather than learned identities; material sequences are sampled by discrete flow matching over the query's candidate bank, thicknesses by continuous flow matching without discretization. A single 136M-parameter model designs 2-100-layer stacks. Across a 224-task benchmark it reconstructs in-distribution targets faithfully and retains same-order accuracy on a 15-material held-out bank without retraining; it reconstructs bands up to 1100 nm beyond its training envelope, designs against analytic application specifications and outperforms an autoregressive baseline on that baseline's material library. With optical constants calibrated to our deposition process, IrisFlow designs four color-displaying coolers, fabricated by ion-assisted evaporation: the three chromatic devices reach a CIEDE2000 color error of 3.1-5.2 while retaining 93-95% solar near-infrared reflectance, demonstrating open-vocabulary design carried through to fabricated coatings.

The reliability with Machine Learning (ML) techniques in novel materials discovery often depend on the quality of the dataset, in addition to the relevant features used in describing the material. In this regard, the current study presents and validates a newly processed materials dataset that can be utilized for benchmark ML analysis, as it relates to the prediction and classification of deterministic target properties. Originally, the dataset was extracted from the Open Quantum Materials Database (OQMD) and contains a robust 16,323 samples of ABX3 inorganic perovskite structures. The dataset is tabular in form and is preprocessed to include sixty-one generalized input features that broadly describes the physicochemical, stability/geometrical, and Density Functional Theory (DFT) target properties associated with the elemental ionic sites in a three-dimensional ABX3 polyhedral. For validation, four different ML models are employed to predict three distinctive target properties, namely: formation energy, energy band gap, and crystal system. On experimentation, the best accuracy measurements are reported at 0.013 eV/atom MAE, 0.216 eV MAE, and 85% F1, corresponding to the formation energy prediction, band gap prediction and crystal system multi-classification, respectively. Moreover, the realized results are compared with previous literature and as such, affirms the resourcefulness of the current dataset for future benchmark materials analysis via ML techniques. The preprocessed dataset and source codes are openly available to download from github.com/chenebuah/ML_abx3_dataset.

Silicon nitride has emerged as a promising photonic platform for integrated single-photon sources, yet the microscopic origin of the recently observed bright quantum emissions remains unclear. Using hybrid density functional theory, we show that the negatively charged N_SiV_N center (NV^{-}) in the C_{1h} configuration exhibits a linearly polarized zero-phonon line (ZPL) at 2.46 eV, with a radiative lifetime of 9.01 ns and a high Debye-Waller (DW) factor of 33%. We further find that the C_{1h} configuration is prone to a pseudo-Jahn-Teller distortion, yielding two symmetrically equivalent defect structures that emit bright, linearly polarized ZPL at 1.80 eV with a lifetime of 10.17 ns and an increased DW factor of 41%. These nitrogen-vacancy-related defects explain the origins of visible quantum emissions, paving the way for deterministic and monolithically integrated silicon-nitride quantum photonics.

Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused on electrostatic doping of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their underlying principles. It is pointed out that correlated electron systems show promise among these various materials displaying phase transitions for logic technologies. Furthermore, novel phenomena emerging from electronic correlation could enable new functionalities in field effect devices. We then briefly review unconventional electrostatic gating techniques, such as ionic liquid gating and ferroelectric gating, which enables ultra large carrier accumulation density in the correlated materials which could in turn lead to phase transitions. The review concludes with a brief discussion on the prospects and suggestions for future research directions in correlated oxide electronics for information processing.

Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moiré systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moiré nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials.

This paper reports on a new and swift hydrothermal chemical route to prepare titanate nanostructures (TNS) avoiding the use of crystalline TiO2 as starting material. The synthesis approach uses a commercial solution of TiCl3 as titanium source to prepare an amorphous precursor, circumventing the use of hazardous chemical compounds. The influence of the reaction temperature and dwell autoclave time on the structure and morphology of the synthesised materials was studied. Homogeneous titanate nanotubes with a high length/diameter aspect ratio were synthesised at 160^{\circ}C and 24 h. A band gap of 3.06\pm0.03 eV was determined for the TNS samples prepared in these experimental conditions. This value is red shifted by 0.14 eV compared to the band gap value usually reported for the TiO2 anatase. Moreover, such samples show better adsorption capacity and photocatalytic performance on the dye rhodamine 6G (R6G) photodegradation process than TiO2 nanoparticles. A 98% reduction of the R6G concentration was achieved after 45 minutes of irradiation of a 10 ppm dye aqueous solution and 1 g/L of TNS catalyst.

As computational demands continue to rise, assessing the environmental footprint of AI requires moving beyond energy and water consumption to include the material demands of specialized hardware. This study quantifies the material footprint of AI training by linking computational workloads to physical hardware needs. The elemental composition of the Nvidia A100 SXM 40 GB graphics processing unit (GPU) was analyzed using inductively coupled plasma optical emission spectroscopy, which identified 32 elements. The results show that AI hardware consists of about 90% heavy metals and only trace amounts of precious metals. The elements copper, iron, tin, silicon, and nickel dominate the GPU composition by mass. In a multi-step methodology, we integrate these measurements with computational throughput per GPU across varying lifespans, accounting for the computational requirements of training specific AI models at different training efficiency regimes. Scenario-based analyses reveal that, depending on Model FLOPs Utilization (MFU) and hardware lifespan, training GPT-4 requires between 1,174 and 8,800 A100 GPUs, corresponding to the extraction and eventual disposal of up to 7 tons of toxic elements. Combined software and hardware optimization strategies can reduce material demands: increasing MFU from 20% to 60% lowers GPU requirements by 67%, while extending lifespan from 1 to 3 years yields comparable savings; implementing both measures together reduces GPU needs by up to 93%. Our findings highlight that incremental performance gains, such as those observed between GPT-3.5 and GPT-4, come at disproportionately high material costs. The study underscores the necessity of incorporating material resource considerations into discussions of AI scalability, emphasizing that future progress in AI must align with principles of resource efficiency and environmental responsibility.

We present WaferSAGE, a framework for wafer defect visual question answering using small vision-language models. To address data scarcity in semiconductor manufacturing, we propose a three-stage synthesis pipeline incorporating structured rubric generation for precise evaluation. Starting from limited labeled wafer maps, we employ clustering-based cleaning to filter label noise, then generate comprehensive defect descriptions using vision-language models, which are converted into structured evaluation rubrics criteria. These rubrics guide the synthesis of VQA pairs, ensuring coverage across defect type identification, spatial distribution, morphology, and root cause analysis. Our dual assessment framework aligns rule-based metrics with LLM-Judge scores via Bayesian optimization, enabling reliable automated evaluation. Through curriculum-based reinforcement learning with Group Sequence Policy Optimization (GSPO) and rubric-aligned rewards, our 4B-parameter Qwen3-VL model achieves a 6.493 LLM-Judge score, closely approaching Gemini-3-Flash (7.149) while enabling complete on-premise deployment. We demonstrate that small models with domain-specific training can surpass proprietary large models in specialized industrial visual understanding, offering a viable path for privacy-preserving, cost-effective deployment in semiconductor manufacturing.

Efficient discovery of precursor additives is essential for improving the performance of perovskite solar cells, yet the large chemical space makes conventional trial-and-error screening inefficient. We develop LEAP(LLM-driven Exploration via Active Learning for Perovskites), an expert-in-the-loop closed framework that couples a domain-specialized large language model(LLM) with active learning for iterative additive prioritization. The LLM is trained to extract mechanism-relevant knowledge from the perovskite additive literature and to represent candidate molecules through interpretable descriptors, which are further integrated into a Bayesian optimization workflow for uncertainty-aware prioritization under low-data conditions. Benchmark results on unseen literature show that the domain-specialized model outperforms general-purpose models in mechanism-consistent reasoning. Experimental validation in an expert-in-the-loop proof-of-concept study suggests improved additive prioritization across three screening rounds, leading to average device PCEs of 20.13% and 20.87% for the later-round 6-CDQ- and 2-CNA-treated devices, respectively, compared with 19.25% for the control, with a champion PCE of 21.32%. These results provide preliminary evidence that literature-grounded mechanistic descriptors, when coupled with Bayesian optimization and expert feasibility review, can support mechanism-aware additive prioritization in perovskite photovoltaics.

The superconducting materials that make up an MKID have a significant effect on its performance. The T_c and normal state resistivity ρ_N of the film determine the penetration depth λ and therefore how much kinetic inductance it has. The ratio of kinetic inductance to total inductance (α), the volume of the inductor, and Q_m determines the magnitude of the response to incoming energy. The quasiparticle lifetime τ_qp is the characteristic time during which the MKID's surface impedance is modified by the incoming energy. Many materials have been explored for use in superconducting resonators and MKIDs, but that information is often not published or scattered around the literature. This chapter contains information and references on the work that has been done with thin film lithographed circuits for MKIDs over the last two decades. Note that measured material properties such as the internal loss quality factor Q_i and quasiparticle lifetime τ_qp vary significantly depending on how the MKID superconducting thin film is made and the system they are measured in, so it is best to interpret all stated values as typical but not definitive. Values are omitted in cases when there aren't enough measurements or there is too much disagreement in the literature to estimate a typical value. In order to be as complete as possible some unpublished results from the author's lab are included and can be identified by the lack of a reference. Unless noted all films are polycrystalline or amorphous.

Emerging AI accelerators increasingly adopt wafer-scale manufacturing technologies, integrating hundreds of thousands of AI cores in a mesh architecture with large distributed on-chip memory (tens of GB in total) and ultra-high on-chip memory bandwidth (tens of PB/s). However, current LLM inference systems, optimized for shared memory architectures like GPUs, fail to exploit these accelerators fully. We introduce WaferLLM, the first wafer-scale LLM inference system. WaferLLM is guided by a novel PLMR model (pronounced as "Plummer") that captures the unique hardware characteristics of wafer-scale architectures. Leveraging this model, WaferLLM pioneers wafer-scale LLM parallelism, optimizing the utilization of hundreds of thousands of on-chip cores. It also introduces MeshGEMM and MeshGEMV, the first GEMM and GEMV implementations designed to scale effectively on wafer-scale accelerators. Evaluations show that WaferLLM achieves up to 200times higher accelerator utilization than state-of-the-art methods. Leveraging a wafer-scale accelerator (Cerebras WSE2), WaferLLM delivers GEMV operations 606times faster and 16times more energy-efficient than on an NVIDIA A100 GPU. For full LLM inference, WaferLLM achieves 10-20times speedups over A100 GPU clusters running SGLang and vLLM. These advantages are expected to grow as wafer-scale AI models, software, and hardware continue to mature. WaferLLM is open-sourced at https://github.com/MeshInfra/WaferLLM.

Diatoms have been described as nanometer-born lithographers because of their ability to create sophisticated three-dimensional amorphous silica exoskeletons. The hierarchical architecture of these structures provides diatoms with mechanical protection and the ability to filter, float, and manipulate light. Therefore, they emerge as an extraordinary model of multifunctional materials from which to draw inspiration. In this paper, we use numerical simulations, analytical models, and experimental tests to unveil the structural and fluid dynamic efficiency of the Coscinodiscus species diatom. Then we propose a novel 3D printable multifunctional biomimetic material for applications such as porous filters, heat exchangers, drug delivery systems, lightweight structures, and robotics. Our results demonstrate the role of Nature as a material designer for efficient and tunable systems and highlight the potential of diatoms for engineering materials innovation. Additionally, the results reported in this paper lay the foundation to extend the structure-property characterization of diatoms.

In the field of integrated circuit manufacturing, the detection and classification of nanoscale wafer defects are critical for subsequent root cause analysis and yield enhancement. The complex background patterns observed in scanning electron microscope (SEM) images and the diverse textures of the defects pose significant challenges. Traditional methods usually suffer from insufficient data, labels, and poor transferability. In this paper, we propose a novel few-shot learning approach, SEM-CLIP, for accurate defect classification and segmentation. SEM-CLIP customizes the Contrastive Language-Image Pretraining (CLIP) model to better focus on defect areas and minimize background distractions, thereby enhancing segmentation accuracy. We employ text prompts enriched with domain knowledge as prior information to assist in precise analysis. Additionally, our approach incorporates feature engineering with textual guidance to categorize defects more effectively. SEM-CLIP requires little annotated data, substantially reducing labor demands in the semiconductor industry. Extensive experimental validation demonstrates that our model achieves impressive classification and segmentation results under few-shot learning scenarios.

Organic Solar Cells are a promising technology for solving the clean energy crisis in the world. However, generating candidate chemical compounds for solar cells is a time-consuming process requiring thousands of hours of laboratory analysis. For a solar cell, the most important property is the power conversion efficiency which is dependent on the highest occupied molecular orbitals (HOMO) values of the donor molecules. Recently, machine learning techniques have proved to be very useful in building predictive models for HOMO values of donor structures of Organic Photovoltaic Cells (OPVs). Since experimental datasets are limited in size, current machine learning models are trained on data derived from calculations based on density functional theory (DFT). Molecular line notations such as SMILES or InChI are popular input representations for describing the molecular structure of donor molecules. The two types of line representations encode different information, such as SMILES defines the bond types while InChi defines protonation. In this work, we present an ensemble deep neural network architecture, called SINet, which harnesses both the SMILES and InChI molecular representations to predict HOMO values and leverage the potential of transfer learning from a sizeable DFT-computed dataset- Harvard CEP to build more robust predictive models for relatively smaller HOPV datasets. Harvard CEP dataset contains molecular structures and properties for 2.3 million candidate donor structures for OPV while HOPV contains DFT-computed and experimental values of 350 and 243 molecules respectively. Our results demonstrate significant performance improvement from the use of transfer learning and leveraging both molecular representations.

Characterizing materials with electron micrographs poses significant challenges for automated labeling due to the complex nature of nanomaterial structures. To address this, we introduce a fully automated, end-to-end pipeline that leverages recent advances in Generative AI. It is designed for analyzing and understanding the microstructures of semiconductor materials with effectiveness comparable to that of human experts, contributing to the pursuit of Artificial General Intelligence (AGI) in nanomaterial identification. Our approach utilizes Large MultiModal Models (LMMs) such as GPT-4V, alongside text-to-image models like DALLE-3. We integrate a GPT-4 guided Visual Question Answering (VQA) method to analyze nanomaterial images, generate synthetic nanomaterial images via DALLE-3, and employ in-context learning with few-shot prompting in GPT-4V for accurate nanomaterial identification. Our method surpasses traditional techniques by enhancing the precision of nanomaterial identification and optimizing the process for high-throughput screening.