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2017-01-16
Electric field modulation of the non-linear areal magnetic anisotropy energy
We study the ferromagnetic layer thickness dependence of the voltage-controlled magnetic anisotropy (VCMA) in gated CoFeB/MgO heterostructures with heavy metal underlayers. When the effective CoFeB thickness is below ~1 nm, the VCMA efficiency of Ta/CoFeB/MgO heterostructures considerably decreases with decreasing CoFe...
1701.04150v1
2018-10-01
Determination of spin Hall angle in heavy metal/CoFeB-based heterostructures with interfacial spin-orbit fields
Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR) technique. An analytical model based on magnetization dynamics due to SOT was used to fit heavy metal (HM) thickness dependence of symmetric and antisymmetric components of t...
1810.00641v1
2011-07-01
High frequency magnetic behavior through the magnetoimpedance effect in CoFeB/(Ta, Ag, Cu) multilayered ferromagnetic thin films
We studied the dynamics of magnetization through an investigation of the magnetoimpedance effect in CoFeB/(Ta, Ag, Cu) multilayered thin films grown by magnetron sputtering. Impedance measurements were analyzed in terms of the mechanisms responsible for their variations at different frequency intervals and the magnetic...
1107.0204v1
2023-01-12
Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers
We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the nanostructure, magnetic and magneto-transport properties of the MTJs were investi...
2301.04823v1
2007-02-09
X-ray photoemission study of CoFeB/MgO thin film bi-layers
We present results from an X-ray photoemission spectroscopy (XPS) study of CoFeB/MgO bi-layers where we observe process-dependent formation of B, Fe, and Co oxides at the CoFeB/MgO interface due to oxidation of CoFeB during MgO deposition. Vacuum annealing reduces the Co and Fe oxides but further incorporates B into th...
0702232v1
2005-04-03
Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur
We investigated the dependence of giant tunnel magnetoresistance (TMR) on the thickness of an MgO barrier and on the annealing temperature of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers. The resistance-area product exponentially increases with MgO thickness, indicating that the quali...
0504051v1
2021-03-30
Thermal annealing enhancement of Josephson critical currents in ferromagnetic CoFeB
The electrical and structural properties of Co40Fe40B20 (CoFeB) alloy are tunable with thermal annealing. This is key in the optimization of CoFeB-based spintronic devices, where the advantageously low magnetic coercivity, high spin polarization, and controllable magnetocrystalline anisotropy are utilised. So far, ther...
2103.16136v1
2020-06-22
Spin-orbit torque induced magnetisation dynamics and switching in CoFeB/Ta/CoFeB system with mixed magnetic anisotropy
Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA) and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer exchange coupling (IEC), measured using ferromagnetic resonance technique is modified by varying...
2006.12068v1
2023-08-17
Interfacial Fe segregation and its influence on magnetic properties of CoFeB/MgFeO multilayers
We investigated the effect of Fe segregated from partially Fe-substituted MgO (MgFeO) on the magnetic properties of CoFeB/MgFeO multilayers. X-ray photoelectron spectroscopy (XPS) as well as magnetic measurements revealed that the segregated Fe was reduced to metal and exhibited ferromagnetism at the CoFeB/MgFeO interf...
2308.08876v1
2012-08-29
CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions
Thermal stability factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, delta is virtually independent of the junction sizes of 48-81 nm...
1208.5828v1
2016-10-24
Spin orbit effects in CoFeB/MgO hetereostructures with heavy metal underlayers
We study effects originating from the strong spin orbit coupling in CoFeB/MgO heterostructures with heavy metal (HM) underlayers. The perpendicular magnetic anisotropy at the CoFeB/MgO interface, the spin Hall angle of the heavy metal layer, current induced torques and the Dzyaloshinskii-Moriya interaction at the HM/Co...
1610.07473v1
2014-06-10
Influence of Ta insertions on the magnetic properties of MgO/CoFeB/MgO films probed by ferromagnetic resonance
We show by vector network analyzer ferromagnetic resonance measurements that low Gilbert damping {\alpha} down to 0.006 can be achieved in perpendicularly magnetized MgO/CoFeB/MgO thin films with ultra-thin insertions of Ta in the CoFeB layer. While increasing the number of Ta insertions allows thicker CoFeB layers to ...
1406.2491v2
2017-07-11
Interface Dzyaloshinskii-Moriya interaction in the interlayer exchange antiferromagnetic coupled Pt/CoFeB/Ru/CoFeB systems
Interfacial Dzyaloshinskii-Moriya interaction (iDMI) in interlayer exchange coupled (IEC) Pt/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm)/Ru/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm) systems have been studied theoretically and experimentally. Vibrating sample magnetometer has been used to measure their magnetization at saturation and...
1707.03427v1
2017-09-21
Low Gilbert Damping Constant in Perpendicularly Magnetized W/CoFeB/MgO Films with High Thermal Stability
Perpendicular magnetic materials with low damping constant and high thermal stability have great potential for realizing high-density, non-volatile, and low-power consumption spintronic devices, which can sustain operation reliability for high processing temperatures. In this work, we study the Gilbert damping constant...
1709.07483v1
2018-01-30
Crystalline structure and XMCD studies of Co40Fe40B20 grown on Bi2Te3, BiTeI and Bi2Se3
Epitaxial films of Co40Fe40B20 (further - CoFeB) were grown on Bi2Te3(001) and Bi2Se3(001) substrates by laser molecular beam epitaxy (LMBE) technique at 200-400C. Bcc-type crystalline structure of CoFeB with (111) plane parallel to (001) plane of Bi2Te3 was observed, in contrast to polycrystalline CoFeB film formed on...
1801.10061v1
2005-09-28
Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers
This work reports on the magnetic interlayer coupling between two amorphous CoFeB layers, separated by a thin Ru spacer. We observe an antiferromagnetic coupling which oscillates as a function of the Ru thickness x, with the second antiferromagnetic maximum found for x=1.0 to 1.1 nm. We have studied the switching of a ...
0509749v1
2016-12-09
Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures
We investigate the spin Hall effect in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with Ta underlayers thicker than the spin diffusion length. The crystallographic structures of the Ta layer and Ta/CoFeB interface are examined in detail using X-ray diffraction and transmission electron microscopy. The thinn...
1612.03020v1
2005-09-28
Switching of sub-micrometer sized, antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers
This work reports on the magnetic reversal of sub-micrometer sized elements consisting of an CoFeB/Ru/CoFeB artificial ferrimagnet (AFi). The elements were patterned into ellipses having a width of approximately 250 to 270nm and a varying aspect ratio between 1.3 and 8. The coercivity was found to decrease with an incr...
0509750v3
2006-02-26
Strong temperature dependence of antiferromagnetic coupling in CoFeB/Ru/CoFeB
The temperature dependence of saturation and spin-flop fields for artificial ferrimagnets (AFi) based on antiparallel coupled CoFeB/Ru/CoFeB trilayers has been investigated in a temperature range between 80K and 600K. The results presented in this paper are relevant for magnetic devices using this system, e.g. magnetic...
0602609v2
2006-06-20
Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer
We investigated the relationship between tunnel magnetoresistance (TMR) ratio and the crystallization of CoFeB layers through annealing in magnetic tunnel junctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnet pinned layers with varying Ru spacer thickness (tRu). The TMR ratio increased with in...
0606503v1
2013-04-17
Tunneling magneto thermocurrent in CoFeB/MgO/CoFeB based magnetic tunnel junctions
We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the CoFeB layers from parallel to the antiparallel orientation. When switching from pa...
1304.4798v1
2014-01-18
Enhancement of Perpendicular Magnetic Anisotropy and Transmission of Spin-Hall-Effect-Induced Spin Currents by a Hf Spacer Layer in W/Hf/CoFeB/MgO Layer
We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W ...
1401.4617v1
2014-12-12
Asymmetric spin-wave dispersion due to Dzyaloshinskii-Moriya interaction in an ultrathin Pt/CoFeB film
Employing Brillouin spectroscopy, strong interfacial Dzyaloshinskii-Moriya interactions have been observed in an ultrathin Pt/CoFeB film. Our micromagnetic simulations show that spin-wave nonreciprocity due to asymmetric surface pinning is insignificant for the 0.8nmthick CoFeB film studied. The observed high asymmetry...
1412.3907v2
2017-04-11
CoFeAlB alloy with low damping and low magnetization for spin transfer torque switching
We investigate the effect of Al doping on the magnetic properties of the alloy CoFeB. Comparative measurements of the saturation magnetization, the Gilbert damping parameter $\alpha$ and the exchange constant as a function of the annealing temperature for CoFeB and CoFeAlB thin films are presented. Our results reveal a...
1704.03326v1
2019-02-20
CoFeB/MgO/CoFeB structures with orthogonal easy axes: perpendicular anisotropy and damping
We report on the Gilbert damping parameter $\alpha$, the effective magnetization $4\pi M_{eff}$, and the asymmetry of the $g$-factor in bottom-CoFeB(0.93~nm)/MgO(0.90--1.25~nm)/CoFeB(1.31~nm)-top as-deposited systems. Magnetization of CoFeB layers exhibits a specific noncollinear configuration with orthogonal easy ax...
1902.07563v1
2017-02-17
Spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO symmetric structure with interlayer antiferromagnetic coupling
Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the so-called synthetic antiferromagnets (SAF), are usually employed to serve as the...
1702.05331v1
2019-09-27
Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect
In this paper, we report the observation of spin-orbit magnetoresistance (SOMR) in ferromagnetic metal/heavy metal/MgO system. We measure the magnetoresistance as the function of the thickness of heavy metal (HM) for CoFeB/HM/MgO and CoFeB/HM films where HM = Pt and Ta. Besides the conventional spin Hall magnetoresista...
1909.12811v3
2021-08-11
Enhancement of in-plane anisotropy in MoS2/CoFeB bilayers
Transition metal dichalcogenides (TMD) possess novel properties which makes them potential candidates for various spintronic applications. Heterostructures of TMD with magnetic thin film have been extensively considered for spin-orbital torque, enhancement of perpendicular magnetic anisotropy etc. However, the effect o...
2108.05130v1
2023-01-06
Interfacial magnetic anisotropy controlled spin pumping in Co60Fe20B20/Pt stack
Controlled spin transport in magnetic stacks is required to realize pure spin current-driven logic and memory devices. The control over the generation and detection of the pure spin current is achieved by tuning the spin to charge conversion efficiency of the heavy metal interfacing with ferromagnets. Here, we demonstr...
2301.02370v1
2023-06-05
Spin-orbit torque generation in bilayers composed of CoFeB and epitaxial SrIrO$_{3}$ grown on an orthorhombic DyScO$_{3}$ substrate
We report on the highly efficient spin-orbit torque (SOT) generation in epitaxial SrIrO$_{3}$(SIO), which is grown on an orthorhombic DyScO$_{3}$(110) substrate. By conducting harmonic Hall measurement in Co$_{20}$Fe$_{60}$B$_{20}$ (CoFeB)/SIO bilayers, we characterize two kinds of the SOTs, i.e., dampinglike (DL) and ...
2306.02567v1
2005-09-28
Magnetic properties of antiferromagnetically coupled CoFeB/Ru/CoFeB
This work reports on the thermal stability of two amorphous CoFeB layers coupled antiferromagnetically via a thin Ru interlayer. The saturation field of the artificial ferrimagnet which is determined by the coupling, J, is almost independent on the annealing temperature up to more than 300 degree C. An annealing at mor...
0509753v1
2008-12-03
Correlation between magnetism and spin-dependent transport in CoFeB alloys
We report a correlation between the spin polarization of the tunneling electrons (TSP) and the magnetic moment of amorphous CoFeB alloys. Such a correlation is surprising since the TSP involves s-like electrons close to the Fermi level (EF), while the magnetic moment mainly arises due to all d-electrons below EF. We sh...
0812.0679v1
2011-10-03
Spin transfer torque oscillator based on asymmetric magnetic tunnel junctions
We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage of the ferromagnetic interlayer exchange coupling between the free and referenc...
1110.0295v1
2014-05-11
Tuning perpendicular magnetic anisotropy in the MgO/CoFeB/Ta thin films
Understanding the magnetic anisotropy at ferromagnetic metal/oxide interface is a fundamental and intriguing subject. Here we propose an approach to manipulate the strength of perpendicular magnetic anisotropy (PMA) by varying MgO thickness in the MgO/CoFeB/Ta thin films. We identify that the PMA at the MgO/CoFeB inter...
1405.2551v2
2017-12-21
Exchange-torque-induced excitation of perpendicular standing spin waves in nanometer-thick YIG films
Spin waves in ferrimagnetic yttrium iron garnet (YIG) films with ultralow magnetic damping are relevant for magnon-based spintronics and low-power wave-like computing. The excitation frequency of spin waves in YIG is rather low in weak external magnetic fields because of its small saturation magnetization, which limits...
1712.08204v1
2020-11-14
Observation of multi-skyrmion objects created by size and density control in Ta/CoFeB/MgO films
Magnetic skyrmions are chiral spin textures with a nontrivial topology that offer a potential for future magnetic memory and storage devices. The controlled formation and adjustment of size and density of magnetic skyrmions in Ta/CoFeB/MgO trilayers is demonstrated. It is the ideal candidate for the use as a bottom ele...
2011.07336v2
2020-11-23
Asymmetric depinning of chiral domain walls in ferromagnetic trilayers
We show that the coupling between two ferromagnetic layers separated by a nonmagnetic spacer can be used to control the depinning of domain walls and induce unidirectional domain wall propagation. We investigated CoFeB/Ti/CoFeB trilayers where the easy axis of the magnetization of the top CoFeB layer is out-of-plane an...
2011.11290v1
2021-02-16
Magnonic band structure in CoFeB/Ta/NiFe meander-shaped magnetic bilayers
In this work, we investigate the spin-wave propagation in three-dimensional nanoscale CoFeB/Ta/NiFe meander structures fabricated on a structured SiO2/Si substrate. The magnonic band structure has been experimentally determined by wavevector-resolved Brillouin light scattering (BLS) spectroscopy and a set of stationary...
2102.08223v2
2016-07-20
MegaOhm Extraordinary Hall effect in oxidized CoFeB
We report on development of controllably oxidized CoFeB ferromagnetic films demonstrating the extraordinary Hall effect (EHE) resistivity exceeding 1 Ohmcm and magnetic field sensitivity up to 10^6 Ohm/T. Such EHE resistivity is four orders of magnitude higher than previously observed in ferromagnetic materials, while ...
1607.05923v1
2016-03-28
Electric-field modulation of exchange stiffness in MgO/CoFeB with perpendicular anisotropy
We observe magnetic domain structures of MgO/CoFeB with a perpendicular magnetic easy axis under an electric field. The domain structure shows a maze pattern with electric-field dependent isotropic period. We find that the electric-field modulation of the period is explained by considering the electric-field modulation...
1603.08280v1
2006-10-18
Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions
We report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annealed at 450oC, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a Mn...
0610526v1
2011-08-24
Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions
We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the anti-parallel configuration is close to unity, it is observed to be typically 0.91\pm0.01 in the parallel configuration. It indicates the...
1108.4831v1
2011-09-27
Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars
We investigate the spin-dependent Seebeck coefficient and the tunneling magneto thermopower of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ) in the presence of thermal gradients across the MTJ. Thermal gradients are generated by an electric heater on top of the nanopillars. The thermo power voltage across the MTJ is ...
1109.5912v1
2013-01-09
Low-frequency and shot noises in CoFeB/MgO/CoFeB magnetic tunneling junctions
The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic tunneling junctions were studied at low temperature. The measured 1/f noise around the magnetic hysteresis loops of the free layer indicates that the main origin of the 1/f noise is the magnetic fluctuation, which is discussed in terms of a fluctu...
1301.2161v1
2013-05-31
Effect of Thermal Annealing on Boron Diffusion, Micro-structural, Electrical and Magnetic properties of Laser Ablated CoFeB Thin Films
We report on Boron diffusion and subsequent crystallization of Co$_{40}$Fe$_{40}$B$_{20}$ (CoFeB) thin films on SiO$_2$/Si(001) substrate using pulsed laser deposition. Secondary ion mass spectroscopy reveals Boron diffusion at the interface in both amorphous and crystalline phase of CoFeB. High-resolution transmission...
1305.7335v1
2015-03-02
Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions
The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory devices. Therefore, an independent switching of the two ferromagnetic electrodes is necessary to guarantee a reliable readout. Here, we demonstrat...
1503.00440v2
2015-03-12
Current induced torques in structures with ultra-thin IrMn antiferromagnet
Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we report electrical measurements of the torques in structures comprising a $\sim1$~nm thick layer of an antiferromagnet IrMn. The reduced N\'eel t...
1503.03729v2
2015-09-14
Thickness-Dependent Magnetoelasticity and its Effects on Perpendicular Magnetic Anisotropy in Ta|CoFeB|MgO Thin Films
We report measurements of the in-plane magnetoelastic coupling in ultra-thin Ta|CoFeB|MgO layers as a function of uniaxial strain, conducted using a four-point bending apparatus. For annealed samples, we observe a strong dependence on the thickness of the CoFeB layer in the range 1.3-2.0 nm, which can be modeled as ari...
1509.04134v1
2015-10-20
Evaluation of Spin Waves and Ferromagnetic Resonance Contribution to the Spin Pumping in Ta/CoFeB Structure
The spin waves and ferromagnetic resonance (FMR) contribution to the spin pumping signal is studied in the Ta/CoFeB interface under different excitation bias fields. Ferromagnetic resonance is excited utilizing a coplanar waveguide and a microwave generator. Using a narrow waveguide of about 3 {\mu}m, magnetostatic sur...
1510.05745v1
2016-10-08
Perpendicularly magnetized CoFeB multilayers with tunable interlayer exchange for synthetic ferrimagnets
A study of the multilayer system MgO/CoFeB(1.1nm)/Ta($t$)/CoFeB(0.8nm)/MgO is presented, where the two CoFeB layers are separated by a Ta interlayer of varying thickness $t$. The magnetization properties deduced from complementary techniques such as superconducting quantum interference magnetometry, ferromagnetic reson...
1610.02550v1
2017-01-05
Excitation and detection of short-waved spin waves in ultrathin Ta/CoFeB/MgO-layer system suitable for spin-orbit-torque magnonics
We report on the excitation and detection of short-waved spin waves with wave vectors up to about $40\,\mathrm{rad}\,\mu\mathrm{m}^{-1}$ in spin-wave waveguides made from ultrathin, in-plane magnetized Co$_{8}$Fe$_{72}$B$_{20}$ (CoFeB). The CoFeB is incorporated in a layer stack of Ta/CoFeB/Mgo, a layer system featurin...
1701.01399v1
2017-01-31
Lack of correlation between the spin mixing conductance and the ISHE-generated voltages in CoFeB/Pt,Ta bilayers
We investigate spin pumping phenomena in polycrystalline CoFeB/Pt and CoFeB/Ta bilayers and the correlation between the effective spin mixing conductance $g^{\uparrow\downarrow}_{\rm eff}$ and the obtained voltages generated by the spin-to-charge current conversion via the inverse spin Hall effect in the Pt and Ta laye...
1701.09110v1
2017-03-21
Influence of magnetic field and ferromagnetic film thickness on domain pattern transfer in multiferroic heterostructures
Domains in BaTiO$_3$ induces a regular modulation of uniaxial magnetic anisotropy in CoFeB via an inverse magnetostriction effect. As a result, the domain structures of the CoFeB wedge film and BaTiO$_3$ substrate correlate fully and straight ferroelectric domain boundaries in BaTiO$_3$ pin magnetic domain walls in CoF...
1703.07227v1
2018-05-31
The current-induced spin-orbit torque and field-free switching from Mo-based magnetic heterostructures
Magnetic heterostructure Mo/CoFeB/MgO has strong perpendicular magnetic anisotropy and thermal stability. Through current-induced hysteresis loop shift measurements, we show that the dampinglike spin-orbit torque (SOT) efficiency of Mo/CoFeB/MgO heterostructure is $\xi_{DL}\approx -0.003\pm 0.001$ and fairly independen...
1805.12322v3
2014-06-08
Perpendicular magnetic anisotropy and magnetization process in CoFeB/Pd multilayer films
Perpendicular magnetic anisotropy (PMA) and dynamic magnetization reversal process in [CoFeB $t$ nm/Pd 1.0 nm]$_n$ ($t$ = 0.4, 0.6, 0.8, 1.0, and 1.2 nm; $n$ = 2 - 20) multilayer films have been studied by means of magnetic hysteresis and Kerr effect measurements. Strong and controllable PMA with an effective uniaxial ...
1406.2028v1
2021-01-26
Voltage-controlled antiferromagnetism in magnetic tunnel junctions
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of t...
2101.11044v1
2023-07-27
Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB
Magnetic tunneling junctions (MTJs) are essential for non-volatile magneto-resistive random access memory (MRAM) applications. Here, we report the observation of a large negative tunneling magneto-resistance (TMR) in the CoFeB/MgO/CoFeB system with an orthogonally-magnetized configuration. Through the thickness modulat...
2307.14807v1
2024-01-26
Efficient Control of Magnetization Dynamics Via W/CuO$_\text{x}$ Interface
Magnetization dynamics, which determine the speed of magnetization switching and spin information propagation, play a central role in modern spintronics. Gaining its control will satisfy the different needs of various spintronic devices. In this work, we demonstrate that the surface oxidized Cu (CuO$_\text{x}$) can be ...
2401.14708v1
2019-04-23
Spin injection and pumping generated by a direct current flowing through a magnetic tunnel junction
A charge flow through a magnetic tunnel junction (MTJ) leads to the generation of a spin-polarized current which exerts a spin-transfer torque (STT) on the magnetization. When the density of applied direct current exceeds some critical value, the STT excites high-frequency magnetization precession in the "free" electro...
1904.10361v1
2016-05-20
Elementary specific spin and orbital moments of ultrathin CoFeB amorphous films on GaAs(100)
Nanoscale CoFeB amorphous films have been synthesized on GaAs(100) and studied with X-ray magnetic circular dichroism (XMCD) and transmission electron microscopy (TEM). We have found that the ratios of the orbital to spin magnetic moments of both the Co and Fe in the ultrathin amorphous film have been enhanced by more ...
1605.06358v1
2020-07-24
Determination of the spin Hall angle, spin mixing conductance and spin diffusion length in Ir/CoFeB for spin-orbitronic devices
Iridium is a very promising material for spintronic applications due to its interesting magnetic properties such as large RKKY exchange coupling as well as its large spin-orbit coupling value. Ir is for instance used as a spacer layer for perpendicular synthetic antiferromagnetic or ferrimagnet systems. However, only a...
2007.12413v1
2010-06-21
Magnonic spin-wave modes in CoFeB antidot lattices
In this manuscript time-resolved magneto-optical Kerr effect experiments on structured CoFeB films are presented. The geometries considered are two dimensional square lattices of micrometer-sized antidots, fabricated by a focused ion beam. The spin-wave spectra of these magnonic crystals show a novel precessional mode,...
1006.4038v1
2012-02-23
Domain structure in CoFeB thin films with perpendicular magnetic anisotropy
Domain structures in CoFeB-MgO thin films with a perpendicular easy magnetization axis were observed by magneto-optic Kerr-effect microscopy at various temperatures. The domain wall surface energy was obtained by analyzing the spatial period of the stripe domains and fitting established domain models to the period. In ...
1202.5128v1
2012-08-27
Spin-wave modes and band structure of rectangular CoFeB antidot lattices
We present an investigation of rectangular antidot lattices in a CoFeB film. Magnonic band structures are numerically calculated, and band gaps are predicted which shift in frequency by 0.9 GHz when rotating the external field from the long to the short axis of the unit cell. We demonstrate by time-resolved experiments...
1208.5339v1
2013-07-24
Measurement of magnetization using domain compressibility in CoFeB films with perpendicular anisotropy
We present a method to map the saturation magnetization of soft ultrathin films with perpendicular anisotropy, and we illustrate it to assess the compositional dependence of the magnetization of CoFeB(1 nm)/MgO films. The method relies on the measurement of the dipolar repulsion of parallel domain walls that define a l...
1307.6479v1
2016-08-08
Temperature dependence of the spin Hall angle and switching current in the nc-W(O)/CoFeB/MgO system with perpendicular magnetic anisotropy
We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The spin Hall angle $|\Theta_\mathrm{SH}| \approx 0.22$ is independent of temperature, whereas the switching current increases ...
1608.02528v1
2017-06-20
Scaling of the Hall effects beyond the quantum resistance threshold in oxidized CoFeB
The ordinary and the extraordinary Hall effects were studied in gradually oxidized amorphous CoFeB ferromagnets over six orders of resistivity from the metallic to the strongly insulating regime. Polarity of the extraordinary Hall effect reverses, and the amplitude of both the ordinary and the extraordinary Hall effect...
1706.06392v1
2021-01-28
Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO
Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with voltage administered through SrTiO3 with a high dielectric constant. We show tha...
2101.12281v1
2023-11-16
Unidirectional propagation of zero-momentum magnons
We report on experimental observation of unidirectional propagation of zero-momentum magnons in synthetic antiferromagnet consisting of strained CoFeB/Ru/CoFeB trilayer. Inherent non-reciprocity of spin waves in synthetic antiferromagnets with uniaxial anisotropy results in smooth and monotonous dispersion relation aro...
2311.10044v1
2014-10-14
Low frequency noise peak near magnon emission energy in magnetic tunnel junctions
We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and...
1410.3586v2
2015-05-05
Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures
The spin-orbit interaction in heavy metal/ferromagnet/oxide structures has been extensively investigated because it can be employed in manipulation of the magnetization direction by in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magne...
1505.00899v1
2020-04-07
Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable fo...
2004.03292v1
2020-06-04
Heisenberg Exchange and Dzyaloshinskii-Moriya Interaction in Ultrathin CoFeB Single and Multilayers
We present results of the analysis of Brillouin Light Scattering (BLS) measurements of spin waves performed on ultrathin single and multirepeat CoFeB layers with adjacent heavy metal layers. From a detailed study of the spin-wave dispersion relation, we independently extract the Heisenberg exchange interaction (also re...
2006.02690v1
2020-06-25
Perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction at an oxide/ferromagnetic metal interface
We report on the study of both perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interaction (DMI) at an oxide/ferromagnetic metal (FM) interface, i.e. BaTiO3 (BTO)/CoFeB. Thanks to the functional properties of the BTO film and the capability to precisely control its growth, we are able to distinguish t...
2006.14268v1
2020-09-29
Structural Phase Dependent Giant Interfacial Spin Transparency in W/CoFeB Thin Film Heterostructure
Pure spin current has transfigured the energy-efficient spintronic devices and it has the salient characteristic of transport of the spin angular momentum. Spin pumping is a potent method to generate pure spin current and for its increased efficiency high effective spin-mixing conductance (Geff) and interfacial spin tr...
2009.14143v1
2022-06-10
Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer
Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall effects (SHEs) provides a facile means of probing in-plane magnetization to avoid complex magnetic tunnel junctions. However, the UMR signal is very weak and usually requires a lock-in amplifier for detection even in the bilayer invo...
2206.04851v1
2022-06-14
Probing of large interfacial contribution to spin orbit coupling in CoFeB/Ta heterostructure by ultrafast THz emission spectroscopy
Ultrafast THz radiation generation from ferromagnetic/nonmagnetic bilayer heterostructure-based spintronic emitters generally exploits the conversion from spin- to charge-current within the nonmagnetic layer and its interface with the ferromagnetic layer. Various possible sub-contributions to the underlying mechanism o...
2206.06718v2
2022-08-31
Perpendicular magnetic anisotropy in as-deposited CoFeB/MgO thin films
Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energy-efficient spin-orbitronic devices, is a long-standing challenge. Even for the widely used CoFeB/MgO structures, perpendicular magnetic ani...
2208.14913v1
2023-11-20
Interplay between moment-dependent and field-driven unidirectional magnetoresistance in CoFeB/InSb/CdTe heterostructures
Magnetoresistance effects are crucial for understanding the charge/spin transport as well as propelling the advancement of spintronic applications. Here we report the coexistence of magnetic moment-dependent (MD) and magnetic field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostru...
2311.11843v1
2024-03-05
Orbital torque switching in perpendicularly magnetized materials
The orbital Hall effect in light materials has attracted considerable attention for developing novel orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the switching of the perpendicularly magnetized materials through the orbital Hall material (OHM), i.e., Zirconium (Zr). The orbital ...
2403.03043v1
2005-10-20
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering
We investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth surface and highly (001) oriented MgO. Using this MgO as a tunnel barrier, tunnel ...
0510531v1
2005-10-20
Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions
Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C are found to be as low as 7.8 x 10^5 A/cm^2 and 8.8 x 10^5 A/cm^2 with accompany...
0510538v1
2006-09-13
Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer
We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO based magnetic tunnel junctions with a Co40Fe40B20(2nm)/Ru(0.7-2.4nm)/Co40...
0609306v2
2009-08-15
Thermal-magnetic noise measurement of spin-torque effects on ferromagnetic resonance in MgO-based magnetic tunnel junctions
Thermal-magnetic noise at ferromagnetic resonance (T-FMR) can be used to measure magnetic perpendicular anisotropy of nanoscale magnetic tunnel junctions (MTJs). For this purpose, T-FMR measurements were conducted with an external magnetic field up to 14 kOe applied perpendicular to the film surface of MgO-based MTJs u...
0908.2164v1
2011-04-04
Tunneling magneto thermo power in magnetic tunnel junction nanopillars
We study the tunneling magneto thermo power (TMTP) in CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars. Thermal gradients across the junctions are generated by a micropatterned electric heater line. Thermo power voltages up to a few tens of \muV between the top and bottom contact of the nanopillars are measured whi...
1104.0537v2
2012-08-28
Magnetic field sensor with voltage-tunable sensing properties
We report on a magnetic field sensor based on CoFeB/MgO/CoFeB magnetic tunnel junctions. By taking advantage of the perpendicular magnetic anisotropy of the CoFeB/MgO interface, the magnetization of the sensing layer is tilted out-of-plane which results in a linear response to in-plane magnetic fields. The application ...
1208.5588v1
2013-11-15
Electric-field-induced strain-mediated magnetoelectric effect in CoFeB-MgO magnetic tunnel junctions
Magnetoelectric coupling between magnetic and electric dipoles is one of the cornerstones of modern physics towards developing the most energy-efficient magnetic data storage. Conventionally, magnetoelectric coupling is achieved in single-phase multiferroics or in magnetoelectric composite nanostructures consisting of ...
1311.3794v1
2014-04-17
Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emit...
1404.4527v1
2014-07-24
Unambiguous separation of the inverse spin Hall and anomalous Nernst Effects within a ferromagnetic metal using the spin Seebeck effect
The longitudinal spin Seebeck effect is measured on the ferromagnetic insulator Fe$_3$O$_4$ with the ferromagnetic metal Co$_{0.2}$Fe$_{0.6}$B$_{0.2}$ (CoFeB) as the spin detector. By using a non-magnetic spacer material between the two materials (Ti), it is possible to decouple the two ferromagnetic materials and dire...
1407.6758v1
2015-05-30
Effect of annealing temperature on exchange stiffness of CoFeB thin films
We investigate the exchange stiffness constants of 28-nm-thick CoFeB film using Brillouin light scattering. Series of CoFeB films are prepared on the MgO(001) substrate with or without additional 5-nm thick MgO buffer layer, the effect of the annealing temperature on the exchange stiffness constants are studied. We fou...
1506.00129v1
2016-02-08
Nanomagnetic logic with non-uniform states of clocking
Nanomagnetic logic transmits information along a path of nanomagnets. The basic mechanism to drive such a transmission, known as clocking, can be achieved by exploiting the spin-Hall effect, as recently observed in experiments on Ta/CoFeB/MgO multilayers [D. Bhowmik, et al., Nat. Nano. 9, 59 (2013)]. This paper shows t...
1602.02528v1
2016-04-18
Temperature dependence of spin-orbit torques in W/CoFeB bilayers
We report on the temperature and layer thickness variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements reveal dissimilar temperature evolutions of longitudinal and transverse effective magnetic field components. The transverse effective field changes sign at ...
1604.05204v1
2016-04-19
Probing the Dzyaloshinskii-Moriya interaction in CoFeB ultrathin films using domain wall creep and Brillouin light spectroscopy
We have characterized the strength of the interfacial Dyzaloshinskii-Moriya interaction (DMI) in ultrathin perpendicularly magnetized CoFeB/MgO films, grown on different underlayers of W, TaN, and Hf, using two experimental methods. First, we determined the effective DMI field from measurements of field-driven domain w...
1604.05475v1
2018-01-17
Interference induced enhancement of magneto-optical Kerr effect in ultrathin magnetic films
We have studied the magneto-optical spectra of ultrathin magnetic films deposited on Si substrates coated with an oxide layer (SiOx). We find that the Kerr rotation angle and the ellipticity of ~1 nm thick CoFeB thin films, almost transparent to visible light, show a strong dependence on the thickness of the SiOx layer...
1801.05539v1
2018-03-19
Enhanced spin-orbit torque via interface engineering in Pt/CoFeB/MgO heterostructures
Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the charge-to-spin conversion arising from either bulk or interfacial spin-orbit interact...
1803.06961v1
2019-11-28
Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high magnetoresistance, stable intermediate states and spin-polarized current switching in a ...
1911.12784v1
2017-05-29
Contributions of Co and Fe orbitals to Perpendicular Magnetic Anisotropy of MgO/CoFeB Bilayers with Spin-Orbit-Torque-Related (Ta, W, IrMn, and Ti) Underlayers
We study the perpendicular magnetic anisotropy (PMA) of the CoFeB/MgO bilayers in contact with W, Ta, IrMn and Ti which has been suggested as the spin-orbit-torque-related underlayers. The saturation magnetization of the CoFeB depends on the underlayer materials due to formation of a dead-layer, affecting PMA strength ...
1705.10064v1
2019-10-30
Ultra-low switching current density in all-amorphous W-Hf / CoFeB / TaOx films
We study current-induced deterministic magnetization switching and domain wall motion via polar Kerr microscopy in all-amorphous W$_{66}$Hf$_{34}$/CoFeB/TaO$_\text{x}$ with perpendicular magnetic anisotropy and large spin Hall angle. Investigations of magnetization switching as a function of in-plane assist field and c...
1910.13837v3
2018-12-05
Voltage-induced strain clocking of nanomagnets with perpendicular magnetic anisotropies
Nanomagnetic logic (NML) has attracted attention during the last two decades due to its promise of high energy efficiency combined with non-volatility. Data transmission in NML relies on Bennett clocking through dipole interaction between neighboring nanomagnetic bits. This paper uses a fully coupled finite element mod...
1812.02268v1
2018-12-18
Enhancement of Spintronic Terahertz Emission via Annealing in Ferromagnetic Heterostructures
We systematically investigate the influence of annealing effect on terahertz (THz) generation from CoFeB based magnetic nanofilms driven by femtosecond laser pulses. Three times enhancement of THz yields are achieved in W/CoFeB through annealing effect, and double boosting is obtained in Pt/CoFeB. The mechanism of anne...
1812.07113v2
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