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2021-03-15
Design of Eutectic High Entropy Alloys
Eutectic high entropy alloys (EHEAs) are emerging as an exciting new class of structural alloys as they have shown very promising mechanical properties. However, how to design these alloys has been a challenge. In this work, a simple approach is presented for designing EHEAs. The introduced approach uses the composition of binary and ternary eutectic alloys for finding the composition of EHEAs. The approach is based on the assumption that EHEAs are originated from binary and ternary eutectic alloys. The approach is applied for alloy systems Al-Co-Cr-Fe-Ni, Co-Cr-Fe-Ni, Co-Cr-Fe-Ni-Ti, and Co-Cr-Fe-Ni-Ta and several EHEAs are predicted for these alloy systems. The predicted results are verified with thermodynamic simulations and experimental data. The results show that the introduced approach can be considered as a feasible and easy-to-use method for designing EHEAs. Based on the developed approach, any binary eutectic alloy can be used for designing multicomponent eutectic alloys.
2103.08216v2
2019-03-19
Composition dependence of magnetoresistance in Fe$_{1-x}$Ni$_{x}$ alloys
Resistance of Fe$_{1-x}$Ni$_x$(x=0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7 and 0.9) has been measured using four probe method from 5K to 300K with and without a longitudinal magnetic field of 8T. The zero field resistivity of x=0.1 and 0.9 alloys, predominant contribution to resistivity above near room temperature is due to electron-phonon scattering, whereas for x=05 and 0.7 alloys electron-magnon scattering is dominant. Alloys with x=0.1 and 0.9 exhibit positive magnetoresistance(MR) from 5K to 300K. For x=0.5 and 0.7 alloys, magnetoresistance changes sign from positive to negative with increase in temperature. The temperature at which sign changes increase with Ni concentration in the alloy. The field dependent magnetoresistance is positive for x=0.1, 0.7 and 0.9 alloys whereas it is negative for x=0.5 alloy. MR follows linear behaviour with field for x=0.1 alloy. MR of all other alloys follow a second order polynomial in field.
1903.08230v3
2020-10-06
Short-range order in GeSn alloy
Group IV alloys have been long viewed as homogeneous random solid solutions since they were first perceived as Si-compatible, direct-band-gap semiconductors 30 years ago. Such a perception underlies the understanding, interpretation and prediction of alloys' properties. However, as the race to create scalable and tunable device materials enters a composition domain far beyond alloys' equilibrium solubility, a fundamental question emerges as to how random these alloys truly are. Here we show, by combining statistical sampling and large-scale ab initio calculations, that GeSn alloy, a promising group IV alloy for mid-infrared technology, exhibits a clear, short-range order for solute atoms within its entire composition range. Such short-range order is further found to substantially affect the electronic properties of GeSn. We demonstrate the proper inclusion of this short-range order through canonical sampling can lead to a significant improvement over previous predictions on alloy's band gaps, by showing an excellent agreement with experiments within the entire studied composition range. Our finding thus not only calls for an important revision of current structural model for group IV alloy, but also suggests short-range order may generically exist in different types of alloys.
2010.02991v2
2021-08-25
Predictive model of surface adsorption in dissolution on transition metals and alloys
Surface adsorption, which is often coupled with surface dissolution, is generally unpredictable on alloys due to the complicated alloying and dissolution effects. Herein, we introduce the electronic gradient and cohesive properties of surface sites to characterize the effects of alloying and dissolution. This enables us to build a predictive model for the quantitative determination of the adsorption energy in dissolution, which holds well for transition metals, near-surface alloys, binary alloys, and high-entropy alloys. Furthermore, this model uncovers a synergistic mechanism between the d-band upper-edge ratio, d-band width and s-band depth in determining the alloying and dissolution effects on adsorption. Our study not only provides fundamental mechanistic insights into surface adsorption on alloys but also offers a long-sought tool for the design of advanced alloy catalysts.
2108.11017v1
2021-09-21
Sustainable low-cost method for production of High entropy alloys from alloy scraps
In this communication,we propose a sustainable way to produce high entropy alloys from alloy scraps called Alloy mixing.We successfully demonstrate this method using a near equimolar CrCuFeMnNi HEA. Alloy scraps (304L stainless steel, Nichrome 80 and electrical wire grade Copper) obtained from various sources were melted together using vacuum arc melting along with minor additions of Mn and Cr to achieve the equiatomic composition.The alloy was characterized using X-ray Diffraction (XRD) and Scanning Electron Microscopy, which confirmed that the alloy produced through Alloy mixing exhibits a microstructure similar to that of the alloy with the same composition produced through conventional melting of pure elements
2109.10276v2
2024-01-15
High entropy alloys and their affinity to hydrogen: from Cantor to platinum group elements alloys
Properties of high entropy alloys are currently in the spotlight due to their promising applications. One of the least investigated aspects is the affinity of these alloys to hydrogen, its diffusion and reactions. In this study we apply high-pressure at ambient temperature and investigate stress-induced diffusion of hydrogen into the tructure of high entropy alloys HEA including the famous Cantor alloy as well as less known, but nevertheless important platinum group PGM alloys. By applying X-ray diffraction to samples loaded into diamond anvil cells we perform a comparative investigation of these HEA alloys in Ne and H2 pressure-transmitting media. Surprisingly, even under stresses far exceeding conventional industrial processes both Cantor and PGM alloys show exceptional resistance to hydride formation, on par with widely used industrial grade CuBe alloys. Our observations inspire optimism for practical HEA applications in hydrogen-relevant industry and technology e.g. coatings, etc, particularly those related to transport and storage.
2401.07802v1
2018-08-09
Underlying burning resistant mechanisms for titanium alloy
The "titanium fire" as produced during high pressure and friction is the major failure scenario for aero-engines. To alleviate this issue, Ti-V-Cr and Ti-Cu-Al series burn resistant titanium alloys have been developed. However, which burn resistant alloy exhibit better property with reasonable cost needs to be evaluated. This work unveils the burning mechanisms of these alloys and discusses whether burn resistance of Cr and V can be replaced by Cu, on which thorough exploration is lacking. Two representative burn resistant alloys are considered, including Ti14(Ti-13Cu-1Al-0.2Si) and Ti40(Ti-25V-15Cr-0.2Si)alloys. Compared with the commercial non-burn resistant titanium alloy, i.e., TC4(Ti-6Al-4V)alloy, it has been found that both Ti14 and Ti40 alloys form "protective" shields during the burning process. Specifically, for Ti14 alloy, a clear Cu-rich layer is formed at the interface between burning product zone and heat affected zone, which consumes oxygen by producing Cu-O compounds and impedes the reaction with Ti-matrix. This work has established a fundamental understanding of burning resistant mechanisms for titanium alloys. Importantly, it is found that Cu could endow titanium alloys with similar burn resistant capability as that of V or Cr, which opens a cost-effective avenue to design burn resistant titanium alloys.
1808.02976v1
2020-03-23
Plasma Surface Metallurgy of Materials Based on Double Glow Discharge Phenomenon
Plasma Surface Metallurgy/Alloying is a kind of surface metallurgy/alloying to employ low temperature plasma produced by glow discharge to diffuse alloying elements into the surface of substrate material to form an alloy layer. The first plasma surface metallurgy technology is plasma nitriding invented by German scientist Dr. Bernard Berghuas in 1930. He was the first person to apply glow discharge to realize the surface alloying. In order to break the limitation of plasma nitriding technology, which can only be applied to a few non-metallic gaseous elements such as nitrogen, carbon, sulfur, the "Double Glow Discharge Phenomenon"was found in 1978. Based on this phenomenon the "Double Glow Plasma Surface Metallurgy Technology", also known as the "Xu-Tec Process" was invented in 1980. It can utilize any chemical elements in the periodic table including solid metallic, gas non-metallic elements and their combination to realize plasma surface alloying, hence greatly expanded the field of surface alloying. Countless surface alloys with high hardness, wear resistance and corrosion resistance, such as high speed steels, nickel base alloys and burn resistant alloys have been produced on the surfaces of a variety of materials. This technology may greatly improve the surface properties of metal materials, comprehensively improve the quality of mechanical products, save a lot of precious alloy elements for human beings. Based on the plasma nitriding technology, the Xu-Tec Process has opened up a new material engineering field of "Plasma Surface Metallurgy". This Review Article briefly presents the history of glow discharge and surface alloying, double glow discharge phenomenon, basic principle and current status of Double Glow Plasma Surface Metallurgy/Alloying. Industrial applications, advantages and future potential of the Xu-Tec process are also presented.
2003.10250v1
2014-08-01
Hexagonal High-Entropy Alloys
We report on the discovery of a high-entropy alloy with a hexagonal crystal structure. Equiatomic samples in the alloy system Ho-Dy-Y-Gd-Tb were found to solidify as homogeneous single-phase high-entropy alloys. The results of our electron diffraction investigations and high-resolution scanning transmission electron microscopy are consistent with a Mg-type hexagonal structure. The possibility of hexagonal high-entropy alloys in other alloy systems is discussed.
1408.0100v3
2016-01-03
Depletion Gilding: An Ancient Method for Surface Enrichment of Gold Alloys
Ancient objects made of noble metal alloys, that is, gold with copper and/or silver, can show the phenomenon of surface enrichment. This phenomenon is regarding the composition of the surface, which has a percentage of gold higher than that of the bulk. This enrichment is obtained by a depletion of the other elements of the alloy, which are, in some manner, removed. This depletion gilding process was used by pre-Columbian populations for their 'tumbaga', a gold-copper alloy, to give it the luster of gold.
1601.00845v1
2017-07-26
Molecular dynamics study of plasticity in Al-Cu alloy nanopillar due to compressive loading
In this paper, compressive loading effects on the plasticity of Al-Cu alloy varying the crystal orientation of Al and alloying element (Cu) percentage are investigated using molecular dynamics approach. The alloying percentage of Cu are varied up to 10% in <001>, <110> and <111> crystal loading direction of Al. Our results indicate that the alloy nanopillar has highest first yielding strength and strain along <110> and <001> direction, respectively. Further, the dislocation density and dislocation interaction are studied to explain the compressive stress strain behavior of the alloy nanopillar.
1707.08404v2
2019-08-07
DFT-based energy shifts screening of Na$_x$K$_{55-x}$ alloy clusters
Compositional effects in NaK alloy clusters have been studied using bond order length strength notation and density functional theory calculations. The results reveal binding energy shifts of the NaK alloy clusters under different elemental compositions. Atomic arrangements that can be used to predict the structures of stable experimental NaK alloys were also obtained. Our study of these alloy nanoclusters has uncovered a trend correlating atomic position and composition with binding energy. We believe this data will help in the experimental preparation of alloy nanoclusters.
1908.02421v1
2019-09-01
Low activation, refractory, high entropy alloys for nuclear applications
Two new, low activation high entropy alloys (HEAs) TiVZrTa and TiVCrTa are studied for use as in-core, structural nuclear materials for in-core nuclear applications. Low-activation is a desirable property for nuclear reactors, in an attempt to reduce the amount of high level radioactive waste upon decommissioning, and for consideration in fusion applications.The alloy TiVNbTa is used as a starting composition to develop two new HEAs; TiVZrTa and TiVCrTa. The new alloys exhibit comparable indentation hardness and modulus, to the TiVNbTa alloy in the as-cast state. After heavy ion implantation the new alloys show an increased irradiation resistance.
1909.00373v1
2018-08-01
Thick amorphous complexion formation and extreme thermal stability in ternary nanocrystalline Cu-Zr-Hf alloys
Building on the recent discovery of tough nanocrystalline Cu-Zr alloys with amorphous intergranular films, this paper investigates ternary nanocrystalline Cu-Zr-Hf alloys with a focus on understanding how alloy composition affects the formation of disordered complexions. Binary Cu-Zr and Cu-Hf alloys with similar initial grain sizes were also fabricated for comparison. The thermal stability of the nanocrystalline alloys was evaluated by annealing at 950 {\deg}C (>95% of the solidus temperatures), followed by detailed characterization of the grain boundary structure. All of the ternary alloys exhibited exceptional thermal stability comparable to that of the binary Cu-Zr alloy, and remained nanocrystalline even after two weeks of annealing at this extremely high temperature. Despite carbide formation and growth in these alloys during milling and annealing, the thermal stability of the ternary alloys is mainly attributed to the formation of thick amorphous intergranular films at high temperatures. Our results show that ternary alloy compositions have thicker boundary films compared to the binary alloys with similar global dopant concentrations. While it is not required for amorphous complexion formation, this work shows that having at least three elements present at the interface can lead to thicker grain boundary films, which is expected to maximize the previously reported toughening effect.
1808.00507v5
2023-05-20
Mechanical Property Design of Bio-compatible Mg alloys using Machine-Learning Algorithms
Magnesium alloys are attractive options for temporary bio-implants because of their biocompatibility, controlled corrosion rate, and similarity to natural bone in terms of stiffness and density. Nevertheless, their low mechanical strength hinders their use as cardiovascular stents and bone substitutes. While it is possible to engineer alloys with the desired mechanical strength, optimizing the mechanical properties of biocompatible magnesium alloys using conventional experimental methods is time-consuming and expensive. Therefore, Artificial Intelligence (AI) can be leveraged to streamline the alloy design process and reduce the required time. In this study, a machine learning model was developed to predict the yield strength (YS) of biocompatible magnesium alloys with an $R^2$ accuracy of 91\%. The predictive model was then validated using the CALPHAD technique and thermodynamics calculations. Next, the predictive model was employed as the fitness function of a genetic algorithm to optimize the alloy composition for high-strength biocompatible magnesium implants. As a result, two alloys were proposed and synthesized, exhibiting YS values of 108 and 113 MPa, respectively. These values were substantially higher than those of conventional magnesium biocompatible alloys and closer to the YS and compressive strength of natural bone. Finally, the synthesized alloys were subjected to microstructure analysis and mechanical property testing to validate and evaluate the performance of the proposed AI-based alloy design approach for creating alloys with specific properties suitable for diverse applications.
2305.12060v1
2008-11-02
Ab-initio simulation and experimental validation of beta-titanium alloys
In this progress report we present a new approach to the ab-initio guided bottom up design of beta-Ti alloys for biomedical applications using a quantum mechanical simulation method in conjunction with experiments. Parameter-free density functional theory calculations are used to provide theoretical guidance in selecting and optimizing Ti-based alloys with respect to three constraints: (i) the use of non-toxic alloy elements; (ii) the stabilization of the body centered cubic beta phase at room temperature; (iii) the reduction of the elastic stiffness compared to existing Ti-based alloys. Following the theoretical predictions, the alloys of interest are cast and characterized with respect to their crystallographic structure, microstructure, texture, and elastic stiffness. Due to the complexity of the ab initio calculations, the simulations have been focused on a set of binary systems of Ti with two different high melting bcc metals, namely, Nb and Mo. Various levels of model approximations to describe mechanical and thermodynamic properties are tested and critically evaluated. The experiments are conducted both, on some of the binary alloys and on two more complex engineering alloy variants, namely, Ti-35wt.%Nb-7wt.%Zr-5wt.%Ta and a Ti-20wt.%Mo-7wt.%Zr-5wt.%Ta.
0811.0157v1
2009-03-13
Half-metallic ferrimagnetism in the [Sc$_{1-x}$V$_x$]C and [Sc$_{1-x} $V$_x$]Si alloys adopting the zinc-blende and wurtzite structures from first-principles
Employing first-principles calculations we study the structural, electronic and magnetic properties of the [Sc$_{1-x}$V$_x$]C and [Sc$_{1-x}$V$_x$]Si alloys. In their equilibrium rocksalt structure all alloys are non-magnetic. The zincblende and wurtzite structures are degenerated with respect to the total energy. For all concentrations the alloys in these lattice structures are half-metallic with the gap located in the spin-down band. The total spin moment follows the Slater-Pauling behavior varying linearly between the -1 $\mu_B$ of the perfect ScC and ScSi alloys and the +1 $\mu_B$ of the perfect VC and VSi alloys. For the intermediate concentrations V and Sc atoms have antiparallel spin magnetic moments and the compounds are half-metallic ferrimagnets. At the critical concentration, both [Sc$_{0.5}$V$_{0.5}$]C and [Sc$_{0.5}$V$_{0.5}$]Si alloys present zero total spin-magnetic moment but the C-based alloy shows a semiconducting behavior contrary to the Si-based alloys which is a half-metallic antiferromagnet.
0903.2331v1
2009-05-07
Research of Mechanical Properties of Ni-Ti-Nb Alloyson Low Temperature and Restriction Behavior
Mechanical Properties of Ni-Ti-Nb alloys with these conditions of cold-drawing, non-vacuum heat treatment and vacuum heat treatment were measured at low temperature, and Mechanical Properties of Ni47Ti44Nb9 alloys of restricting recover was compared with the one of alloys of non-restricting recover, and these rules of the mechanical performance between them was analyzed. Experiment indicates that, mechanical Properties of vacuum heat treatment's alloys was more excellent than the other two (non-vacuum heat treatment and cold-drawing), and the stress curves of alloys of restricting recover haven't the evident yield band, and the stress of alloys of restricting recover was higher than the ones of alloys of non-restricting recover, but the stress of alloys of restricting recover was lower than the ones of alloys of non-restricting recover.
0905.0967v2
2012-05-07
Gamma-irradiation influence on the initial magnetic conductivity of based on the system Fe-Si-B amorphous and nanocrystalline alloys
The dependence of initial magnetic permeability {\mu}i of based on the Fe-Si-B amorphous and nanocrystalline alloys on the {\gamma}-irradiation dose was investigated by the method of inductance factor determination. It was determined that the alloying of amorphous Fe-Si-B alloys by nickel and molybdenum increases the radiation sensitivity of the {\mu}i. Initial magnetic permeability of nanocrystalline magnetic alloys is less sensitive to the action of {\gamma}-irradiation as compared with the alloyed amorphous alloys. Has been suggested that radiation influence on the initial magnetic permeability are caused by creation of non-magnetic incorporation in structure of amorphous alloys as well as amorphous matrix of nanocrystalline alloys.
1205.1354v1
2013-07-15
Characterization of Al and Mg Alloys from Their X-Ray Emission Bands
The valence states of Mg-Al alloys are compared to those of reference materials (pure Mg and Al metals, and intermetallics). Two methods based on X-ray emission spectroscopy are proposed to determine the phases and their proportion: first, by analyzing the Al valence spectra of the Mg-rich alloys and the Mg valence spectra of the Al-rich alloys; second, by fitting with a linear combination of the reference spectra the Al spectra of the Al-rich alloys and the Mg spectra of the Mg-rich alloys. This enables us to determine that Al and Al3Mg2 are present in the 0-43.9 wt% Al composition range and Mg and Al12Mg17 are present in the 62.5-100 wt% Al composition range. In the 43.9-62.5% Al range, the alloy is single phase and an underestimation of the Al content of the alloy can be estimated from the comparison of the bandwidth of the alloy spectrum to the bandwidths of the reference spectra.
1307.3959v1
2013-11-06
Characterization of poly- and single-crystal uranium-molybdenum alloy thin films
Poly- and single-crystal thin films of U-Mo alloys have been grown both on glass and sapphire substrates by UHV magnetron sputtering. X-ray and Electron Backscatter Diffraction data indicate that for single-crystal U1-xMox alloys, the pure cubic uranium gamma-phase exists for x > 0.22 (10 wt.% Mo). Below 10 wt.% Mo concentration, the resulting thin film alloys exhibited a mixed alpha-gamma uranium phase composition.
1311.1430v1
2020-01-22
The design of eutectic high entropy alloys in Al-Co-Cr-Fe-Ni system
In the present work, a simple approach is proposed for predicting the compositions of eutectic high entropy alloys (EHEAs) in Al-Co-Cr-Fe-Ni system. It is proposed that eutectic lines exist between certain eutectic alloys in this system and, as a result, new eutectic or near-eutectic compositions can be obtained by mixing the alloys which are located on the same eutectic line. The approach is applied for a series of experimentally verified eutectic alloys and new eutectic or near-eutectic alloys are designed for Al-Co-Cr-Fe-Ni system. Furthermore, by investigating the compositions of verified eutectic alloys in Al-Co-Cr-Fe-Ni system, compositional diagrams are proposed which show the relations between the concentrations of constituent elements in eutectic alloys. The compositional diagrams suggest that EHEAs are derived from binary and ternary eutectic alloys. Moreover, the proposed diagrams can be considered as convenient methods for evaluating the composition of EHEAs in Al-Co-Cr-Fe-Ni system.
2001.07954v1
2021-07-06
A Transferable Machine-learning Scheme from Pure Metals to Alloys in Predicting Adsorption Energies
Alloys present the great potential in catalysis because of their adjustable compositions, structures and element distributions, which unfortunately also limit the fast screening of the potential alloy catalysts. Machine learning methods are able to tackle the multi-variable issues but still cannot yet predict the complex alloy catalysts from the properties of pure metals due to the lack of universal descriptors. Herein we propose a transferable machine-learning model based on the intrinsic properties of substrates and adsorbates, which can predict the adsorption energies of single-atom alloys (SAAs), AB intermetallics (ABs) and high-entropy alloys (HEAs), simply by training the properties of transition metals (TMs). Furthermore, this model builds the structure-activity relationship of the adsorption energies on alloys from the perspective of machine learning, which reveals the role of the surface atoms' valence, electronegativity and coordination and the adsorbates' valence in determining the adsorption energies. This transferable scheme advances the understanding of the adsorption mechanism on alloys and the rapid design of alloy catalysts.
2107.02599v1
2019-01-06
Effect of copper content on thermal and mechanical properties of eutectoid zn-al alloy
Zn-Al alloys have become one of the major engineering alloys among commercially available alloys. This study was conducted on eutectoid composition of Zn-Al alloy with an observation of the effect of copper addition. For this purpose, one eutectoid (Zn-22wt%Al) and three other alloys, adding 1wt%, 3wt% and 5wt% copper with this eutectoid composition, were molded in permanent metal mould. Microscopic studies exhibited varied grains which confirmed the formation of different phases. Moreover, the formation of different phases in micro study was supported by XRD analysis. Hardness of the samples were tested on Rockwell B scale and it was observed that the hardness of these alloys was substantially increased with the addition of copper. With increasing amount of copper, phase changing temperature of the alloys reveals a growing trend, which was observed by DTA analysis. From this study it was concluded that addition of copper can significantly add to the mechanical properties of Zn-Al alloys.
1901.01519v2
2019-08-13
Investigating the real-time dissolution of a compositionally complex alloy using inline ICP and correlation with XPS
The real-time dissolution of the single-phase compositionally complex alloy (CCA), Al1.5TiVCr, was studied using an inline inductively coupled plasma method. Compositionally complex alloys (CCAs), a term encompassing high entropy alloys (HEAs) or multi-principal element alloys (MPEAs), are - in general - noted for their inherently high corrosion resistance. In order to gain an insight into the dissolution of Al1.5TiVCr alloy, atomic emission spectroelectrochemistry was utilised in order to measure the ion dissolution of the alloy during anodic polarisation. It was revealed that incongruent dissolution occurred, with preferential dissolution of Al, and essentially no dissolution of Ti, until the point of alloy breakdown. Results were correlated with X-ray photoelectron spectroscopy, which revealed a complex surface oxide inclusive of unoxidised metal, and metal oxides in disproportion to the bulk alloying element ratio.
1908.04493v1
2020-11-14
The influence of alloying on the stacking fault energy of gold from density functional theory calculations
The generalized stacking fault (SFE) energy curves of pure gold (Au) and its binary alloys with transition metals are determined from density functional theory (DFT). Alloy elements Ag, Al, Cu, Ni, Ti, Zr, Zn, In, Ga, Sn, Mn, Cd, Sn, Ta and Cr are substituted into Au at concentrations up to 4%. A comparison of various proposed methodologies to calculate SFEs is given. The intrinsic SFE decreases for all alloying elements from its value for pure Au, but SFE energies (both stable and unstable) vary strongly with the distance of the alloying element from the stacking fault region, and with alloy concentration. The compositional dependence of the SFE on the volume change associated with alloying element is determined. This work demonstrates that the SFE is strongly influenced by misfit strain caused by the alloying elements. Moreover, the computed generalized SFE curves provide information valuable to developing an understanding of the deformation behavior of Au and Au-alloys.
2011.07305v1
2021-01-07
Highly Distorted Lattices in Chemically Complex Alloys Produce Ultra-Elastic Materials with Extraordinary Elinvar Effects
Conventional crystalline alloys usually possess a low atomic size difference in order to stabilize its crystalline structure. However, in this article, we report a single phase chemically complex alloy which possesses a large atomic size misfit usually unaffordable to conventional alloys. Consequently, this alloy develops a rather complex atomic-scale chemical order and a highly distorted crystalline structure. As a result, this crystalline alloy displays an unusually high elastic strain limit (~2%), about ten times of that of conventional alloys, and an extremely low internal friction (< 2E-4) at room temperature. More interestingly, this alloy firmly maintains its elastic modulus even when the testing temperature rises from room temperature to 900 K, which is unmatched by the existing alloys hitherto reported. From an application viewpoint, our discovery may open up new opportunities to design high precision devices usable even under an extreme environment.
2101.02382v1
2021-04-20
Accelerated Discovery of Molten Salt Corrosion-resistant Alloy by High-throughput Experimental and Modeling Methods Coupled to Data Analytics
Insufficient availability of molten salt corrosion-resistant alloys severely limits the fruition of a variety of promising molten salt technologies that could otherwise have significant societal impacts. To accelerate alloy development for molten salt applications and develop fundamental understanding of corrosion in these environments, here we present an integrated approach using a set of high-throughput alloy synthesis, corrosion testing, and modeling coupled with automated characterization and machine learning. By using this approach, a broad range of Cr-Fe-Mn-Ni alloys were evaluated for their corrosion resistances in molten salt simultaneously demonstrating that corrosion-resistant alloy development can be accelerated by thousands of times. Based on the obtained results, we unveiled a sacrificial mechanism in the corrosion of Cr-Fe-Mn-Ni alloys in molten salts which can be applied to protect the less unstable elements in the alloy from being depleted, and provided new insights on the design of high-temperature molten salt corrosion-resistant alloys.
2104.10235v1
2021-08-13
Insight into Ideal Shear Strength of Ni-based Dilute Alloys using First-Principles Calculations and Correlational Analysis
The present work examines the effect of alloying elements (denoted X) on the ideal shear strength for 26 dilute Ni-based alloys, Ni$_{11}$X, as determined by first-principles calculations of pure alias shear deformations. The variations in ideal shear strength are quantitatively explored with correlational analysis techniques, showing the importance of atomic properties such as size and electronegativity. The shear moduli of the alloys are affirmed to show a strong linear relationship with their ideal shear strengths, while the shear moduli of the individual alloying elements were not indicative of alloy shear strength. Through combination with available ideal shear strength data on Mg alloys, a potential application of the Ni alloy data is demonstrated in the search for a set of atomic features suitable for machine learning applications to mechanical properties. As another illustration, the predicted Ni ideal shear strengths play a key role in a predictive multiscale framework for deformation behavior of single crystal alloys at large strains, as shown by simulated stress-strain curves.
2108.06412v2
2021-10-18
Equilibrium Phase Diagrams of Isostructural and Heterostructural Two-Dimensional Alloys from First Principles
Alloying is a successful strategy for tuning the phases and properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs). To accelerate the synthesis of new TMDC alloys, we present a method for generating temperature-composition equilibrium phase diagrams by combining first-principles total energy calculations with thermodynamic solution models. This method is applied to three representative 2D TMDC alloys: an isostructural alloy, MoS2(1-x)Te2x, and two heterostructural alloys, Mo1-xWxTe2 and WS2(1-x)Te2x. We show that the mixing enthalpy of the entire composition range of these binary alloys can be reliably represented using a sub-regular solution model fitted to the total energy of a small number of compositions that are calculated using density-functional theory on special quasi-random structures. The sub-regular solution model uses a cubic fit that captures three-body effects that are important in these TMDC alloys having hexagonal structures. By comparing both isostructural and heterostructural phase diagrams generated with this method to those calculated with cluster expansion methods, we demonstrate that this method can be used to rapidly design phase diagrams of TMDC alloys, and related 2D materials.
2110.09589v2
2023-09-09
High-throughput screening of coherent topologically close-packed precipitates in hexagonal close-packed metallic systems
The nanoscale, coherent topologically close-packed (TCP) precipitate plates in magnesium alloys are found beneficial to the strength and creep resistance of alloys. However, the conventional trial-and-error method is too time-consuming and costly, which impedes the application of TCP precipitates to hcp-based metallic alloys. Here, we systematically screen the potential coherent TCP precipitate plates in the three most common hcp alloys, magnesium (Mg), titanium (Ti), and zirconium (Zr) alloys, using an efficient high-throughput screening methodology. Our findings indicate that the hcp-to-TCP structural transformations readily occur in Mg alloys, leading to abundant precipitation of TCP plates. However, hcp-Ti and Zr alloys exhibit a preference for hcp-to-bcc structural transformations, rather than the in situ precipitation of TCP plates. These screening results are largely consistent with experimental observations. The insights gained contribute to a deeper understanding of precipitation behavior in various hcp-based alloys at the atomic level and provide insightful reference results for designing novel alloys containing TCP phases.
2309.04822v2
2006-05-29
Epitaxy of thin films of the Heusler compound Co2Cr0.6Fe0.4Al
Epitaxial thin films of the highly spin polarized Heusler compound Co2Cr0.6Fe0.4Al are deposited by dc magnetron sputtering. It is shown by XRD and TEM investigations how the use of an Fe buffer layer on MgO(100) substrates supports the growth of highly ordered Co2Cr0.6Fe0.4Al at low deposition temperatures. The as grown samples show a relatively large ordered magnetic moment of mu = 3.0mu_B/f.u. providing evidence for a low level of disorder.
0605698v2
2006-09-02
A new diluted magnetic semiconductor: The half-metallic ferromagnet CoTi(1-x)FexSb
Half-Heusler compounds with 18 valence electrons are semi-conducting. It will be shown that doping with electrons results in half-metallic ferromagnets, similar to the case of diluted semi-conductors. CoTiSb is known to be a semi-conducting Half-Heusler compound. Doping by Fe is expected to result in ferromagnetic order. It was found that Ti can be replaced by up to about 10% Fe while its crystal structure still remains C1b, which was proved by X-ray powder diffraction. SQUID magnetometry revealed a magnetic moment of 0.32 mB per unit cell at 5K.
0609042v1
2006-10-17
Surface and bulk properties of the Heusler compound Co2Cr0.6Fe0.4Al: a Moessbauer study
To explore its structural and magnetic properties, the Heusler compound Co2Cr0.6Fe0.4Al was investigated using Moessbauer spectroscopy. The results of both transmission and conversion electron Moessbauer spectroscopy (CEMS) are analyzed to obtain insight into both the disorder effects as well as the differences between bulk and surface properties. It was found that mechanical treatment of the surfaces of bulk samples causes disorder and phase segregation, effects that should be taken into consideration when performing studies using surface-informative techniques. Results from bulk sample CEMS measurements of Co2Cr0.6Fe0.4Al are used to interpret the thin film Moessbauer spectra of this compound.
0610480v1
2007-03-28
Crystalline electric fields and the magnetic ground state of the novel Heusler intermetallic YbRh$_{2}$Pb
We have synthesized a new intermetallic compound with a distorted Heusler structure, YbRh$_{2}$Pb. We present a study of the magnetic, thermal, and transport properties. Heat capacity measurements revealed that YbRh$_{2}$Pb orders magnetically below T$_{N}$=0.57 K from a paramagnetic state with substantial crystal electric field splitting. Magnetic field further splits the ground state, which leads to the suppression of magnetic order in YbRh$_{2}$Pb.
0703765v2
1995-03-28
THE UNIQUENESS THEOREM FOR ROTATING BLACK HOLE SOLUTIONS OF SELF-GRAVITATING HARMONIC MAPPINGS
We consider rotating black hole configurations of self-gravitating maps from spacetime into arbitrary Riemannian manifolds. We first establish the integrability conditions for the Killing fields generating the stationary and the axisymmetric isometry (circularity theorem). Restricting ourselves to mappings with harmonic action, we subsequently prove that the only stationary and axisymmetric, asymptotically flat black hole solution with regular event horizon is the Kerr metric. Together with the uniqueness result for non-rotating configurations and the strong rigidity theorem, this establishes the uniqueness of the Kerr family amongst all stationary black hole solutions of self-gravitating harmonic mappings.
9503053v1
1995-06-15
Pulsation of Spherically Symmetric Systems in General Relativity
The pulsation equations for spherically symmetric black hole and soliton solutions are brought into a standard form. The formulae apply to a large class of field theoretical matter models and can easily be worked out for specific examples. The close relation to the energy principle in terms of the second variation of the Schwarzschild mass is also established. The use of the general expressions is illustrated for the Einstein-Yang-Mills and the Einstein-Skyrme system.
9506027v1
1996-10-11
No-Hair Theorems and Black Holes with Hair
The critical steps leading to the uniqueness theorem for the Kerr-Newman metric are reexamined in the light of the new black hole solutions with Yang-Mills and scalar hair. Various methods -- including scaling techniques, arguments based on energy conditions, conformal transformations and divergence identities -- are reviewed, and their range of application to selfgravitating scalar and non-Abelian gauge fields is discussed. In particular, the no-hair theorem is extended to harmonic mappings with arbitrary Riemannian target manifolds. (This paper is an extended version of an invited lecture held at the Journ\'ees Relativistes 96.)
9610019v1
1997-03-06
Mass formulae for a class of nonrotating black holes
In the presence of a Killing symmetry, various self-gravitating field theories with massless scalars (moduli) and vector fields reduce to sigma-models, effectively coupled to 3-dimensional gravity. We argue that this particular structure of the Einstein-matter equations gives rise to quadratic relations between the asymptotic flux integrals and the area and surface gravity (Hawking temperature) of the horizon. The method is first illustrated for the Einstein-Maxwell system. A derivation of the quadratic formula is then also presented for the Einstein-Maxwell-axion-dilaton model, which is relevant to the bosonic sector of heterotic string theory.
9703015v1
1998-05-15
On rotational excitations and axial deformations of BPS monopoles and Julia-Zee dyons
It is shown that Julia-Zee dyons do not admit slowly rotating excitations. This is achieved by investigating the complete set of stationary excitations which can give rise to non-vanishing angular momentum. The relevant zero modes are parametrized in a gauge invariant way and analyzed by means of a harmonic decomposition. Since general arguments show that the solutions to the linearized Bogomol'nyi equations cannot contribute to the angular momentum, the relevant modes are governed by a set of electric and a set of non self-dual magnetic perturbation equations. The absence of axial dipole deformations is also established.
9805061v1
2001-05-22
Semiclassical evidence for the BGS-conjecture
Recently, M. Sieber and K. Richter achieved a breakthrough towards a proof of the BGS-conjecture by calculating semiclassically a first correction to the diagonal approximation of the orthogonal form factor for geodesic flow on a Riemann surface of constant negative curvature. In this note, we try to generalize the arguments. However, the solution proposed is not yet correct, because also other geometries must be taken into account.
0105052v3
2001-06-22
Near action degeneracy of periodic orbits in systems with non-conventional time reversal
Recently, Sieber and Richter calculated semiclassically a first off-diagonal contribution to the orthogonal form factor for a billiard on a surface of constant negative curvature by considering orbit pairs having almost the same action. For a generalization of this derivation to systems invariant under non-conventional time reversal symmetry, which also belong to the orthogonal symmetry class, we show in this paper that it is necessary to redefine the configuration space in an appropriate way.
0106035v1
2011-10-13
Berry-curvatures and anomalous Hall effect in Heusler compounds
Berry curvatures are computed for a set of Heusler compounds using density functional (DF) calculations and the wave functions that DF provide. The anomalous Hall conductivity is obtained from the Berry curvatures. It is compared with experimental values in the case of Co$_2$CrAl and Co$_2$MnAl. A notable trend cannot be seen but the range of values is quite enormous. The results for the anomalous Hall conductivities and their large variations can be qualitatively understood by means of the band structure and the Fermi-surface topology.
1110.2878v1
2012-06-06
Probing the superconducting state of the Heusler supercoductor: ZrNi$_2$Ga
Using both muon spin rotation and muon spin relaxation, the superconducting ground state of the Heusler superconductor {ZrNi$_2$Ga} has been studied. The temperature dependence of the magnetic penetration depth of {ZrNi$_2$Ga} is consistent with a single isotropic gap s-wave BCS superconductor. The gap energy is \Delta(0)=0.44(1) meV and the magnetic penetration depth, \lambda(0), is 310(5) nm. Furthermore, we show evidence of a possible cross-over from an square flux line lattice to a hexagonal lattice at low temperatures. No evidence of time reversal symmetry breaking has been observed as might be expected for a half metal superconductor.
1206.1182v1
2012-10-19
Search for spin gapless semiconductors: The case of inverse Heusler compounds
We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications.
1210.5355v1
2013-09-25
Half metallic state and magnetic properties versus the lattice constant in Ti\raisebox{-.2ex}{\scriptsize 2}CoSn Heusler compound: an ab initio study
The half metallic properties of Ti\raisebox{-.2ex}{\scriptsize 2}CoSn full-Heusler compound is studied within the framework of the density functional theory with the Perdew Burke Ernzerhof generalized gradient approximation (GGA). Structural optimization was performed and the calculated equilibrium lattice constant is 6.340 A. The spin up band of compound has metallic character and spin down band is semiconducting with an indirect gap of 0.598 eV at equilibrium lattice constant. For the lattice parameter, ranging from 6.193 to 6.884 A the compound presents 100% spin polarization and a total magnetic moment of 3$\mu_{B}$.
1309.6437v1
2014-11-26
Theoretical investigations of electronic structure and magnetism in Zr2CoSn full-Heusler compound
The half-metallic properties of a new and promising full-Heusler compound, Zr2CoSn, are investigated by means of ab initio calculations within the Density Functional Theory framework. The ferromagnetic ordered Hg2CuTi-type crystal structure is energetically favorable and the optimized lattice parameter is 6.76 A. The total magnetic moment calculated is 3 uB/f.u. and follows a typical Slater-Pauling dependence. The half metallicity disappears if the unit cell volume is contracted by 5 %.
1411.7154v1
2018-04-01
First-principles study on thermoelectric properties of half-Heusler compounds CoMSb(M=Sc, Ti, V, Cr, and Mn)
We have performed systematic density functional calculations and evaluated thermoelectric properties, See- beck coefficient and anomalous Nernst coefficient of half-Heusler comounds CoMSb(M=Sc, Ti, V, Cr, and Mn). The carrier concentration dependence of Seebeck coefficients in nonmagnetic compounds are in good agreement with experimental values. We found that the half-metallic ferromagnetic CoMnSb show large anomalous Nernst effect originating from Berry curvature at the Brillouin zone boundary. These results help to understanding for the mechanism of large anomalous Nernst coefficient and give us a clue to design high performance magnetic thermoelectric materials.
1804.00297v1
2022-12-19
Chiral surface superconductivity in half-Heusler semimetals
We propose the metallic and weakly dispersive surface states of half-Heusler semimetals as a possible domain for the onset of unconventional surface superconductivity ahead of the bulk transition. Using density functional theory (DFT) calculations and the random phase approximation (RPA), we analyse the surface band structure of LuPtBi and its propensity towards Cooper pair formation induced by screened electron-electron interactions in the presence of strong spin-orbit coupling. Over a wide range of model parameters, we find an energetically favoured chiral superconducting condensate featuring Majorana edge modes, while low-dimensional order parameter fluctuations trigger time-reversal symmetry breaking to precede the superconducting transition.
2212.09786v1
2013-09-07
Defects and hyperfine interactions in binary Fe-Al alloys studied by positron annihilation and Mossbauer spectroscopies
The defects, the behavior of 3d electrons and the hyperfine interactions in binary Fe-Al alloys with different Al contents have been studied by the measurements of positron lifetime spectra, coincidence Doppler broadening spectra of positron annihilation radiation and Mossbauer spectra. The results show that on increasing the Al content in Fe-Al alloys, the mean positron lifetime of the alloys increase, while the mean electron density of the alloys decrease. The increase of Al content in binary Fe-Al alloys will decrease the amount of unpaired 3d electrons; as a consequence the probability of positron annihilation with 3d electrons and the hyperfine field decrease rapidly. Mossbauer spectra of binary Fe-Al alloys with Al content less than 25at% show discrete sextets, these alloys give ferromagnetic contribution at room temperature. The M\"ossbauer spectrum of Fe70Al30 shows a broad singlet. As Al content higher than 40 at%, the M\"ossbauer spectra of these alloys are singlet, that is, the alloys are paramagnetic. The behavior of 3d electron and its effect on the hyperfine field of the binary Fe-Al alloy has been discussed.
1309.2673v1
2014-10-02
Phase stability of ternary fcc and bcc Fe-Cr-Ni alloys
The phase stability of fcc and bcc magnetic binary Fe-Cr, Fe-Ni, Cr-Ni alloys and ternary Fe-Cr-Ni alloys is investigated using a combination of density functional theory (DFT), Cluster Expansion (CE) and Magnetic Cluster Expansion (MCE). Energies, magnetic moments, and volumes of more than 500 alloy structures are evaluated using DFT, and the most stable magnetic configurations are compared with experimental data. Deviations from the Vegard law in fcc Fe-Cr-Ni alloys, associated with non-linear variation of atomic magnetic moments as functions of alloy composition, are observed. Accuracy of the CE model is assessed against the DFT data, where for ternary alloys the cross-validation error is smaller than 12 meV/atom. A set of cluster interaction parameters is defined for each alloy, where it is used for predicting new ordered alloy structures. Fcc Fe2CrNi phase with Cu2NiZn-like structure is predicted as the global ground state with the lowest chemical ordering temperature of 650K. DFT-based Monte Carlo (MC) simulations are used for assessing finite temperature fcc-bcc phase stability and order-disorder transitions in Fe-Cr-Ni alloys. Enthalpies of formation of ternary alloys calculated from MC simulations at 1600K combined with magnetic correction derived from MCE are in excellent agreement with experimental values measured at 1565K. Chemical order is analysed, as a function of temperature and composition, in terms of the Warren-Cowley short-range order (SRO) parameters and effective chemical pairwise interactions.
1410.0548v2
2020-05-11
Microstructure, mechanical properties and aging behaviour of nanocrystalline copper-beryllium alloy
A complex study of aging kinetics for both coarse-grained and nanostructured by severe plastic deformation Cu -- 2 wt% Be alloy is reported. It is shown that aging of a coarse-grained alloy leads to continuous formation of nanosized CuBe body centred cubic (bcc, CsCl -- type) semi-coherent particles with the {220} Cu // {200} CuBe crystallographic orientation relationship. These particles created significant internal stress fields and became obstacles for dislocation glide that resulted in a change in the hardness from 95 Vickers hardness (HV) for the solubilized alloy to 400 HV for the aged one. The severe plastic deformation led to the formation of a single-phase nanograined microstructure with an average grain size of 20 nm and 390 HV. It was found that this grain size was slightly driven by grain boundary segregation. Further aging of the nanocrystalline alloy led to the discontinuous formation of precipitates on the former Cu grain boundaries and skipping of metastable phases. Significant age hardening with a maximum hardness of 466 HV for the aged nanostructured alloy was observed. Mechanical tests result revealed a strong influence of microstructure and further aging on strength capability of the alloy for both coarse-grained and nanostructured alloy. A good thermal stability in the nanostructured alloy was also noticed. Theoretical calculations of the hardness value for the CuBe phase are provided. It was shown that Be as a light alloying elements could be used for direct change of microstructure of severely deformed copper alloys.
2005.04976v1
2017-10-13
Unusual negative formation enthalpies and atomic ordering in isovalent alloys of transition metal dichalcogenide monolayers
Common substitutional isovalent semiconductor alloys usually form disordered metastable phases with positive excess formation enthalpies ({\Delta}H). In contrast, monolayer alloys of transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se) always have negative {\Delta}H, suggesting atomic ordering, which is, however, not yet experimentally observed. Using first-principles calculations, we find that the negative {\Delta}H of cation-mixed TMD alloys results from the charge transfer from weak Mo-X to nearest strong W-X bonds and the negative {\Delta}H of anion-mixed TMD alloys comes from the larger energy gain due to the charge transfer from Se to nearest S atoms than the energy cost due to the lattice mismatch. Consequently, cation-mixed and anion-mixed alloys should energetically prefer to have Mo-X-W and S-M-Se ordering, respectively. The atomic ordering, however, is only locally ordered but disordered in the long range due to the symmetry of TMD monolayers, as demonstrated by many energetically degenerate structures for given alloy compositions. Besides, the local ordering and disordering effects on the macroscopic properties such as bandgaps and optical absorptions are negligible, making the experimental observation of locally ordered TMD alloys challenging. We propose to take the advantage of microscopic properties such as defects which strongly depend on local atomic configurations for experiments to identify the disordering and local ordering in TMD alloys. Finally, quaternary TMD alloys by mixing both cations and anions are studied to have a wide range of bandgaps for optoelectronic applications. Our work is expected to help the formation and utilization of TMD alloys.
1710.05064v1
2024-01-15
Impact of boron atom clustering on the electronic structure of (B,In)N alloys
Tailoring the electronic and optical properties of nitride-based alloys for optoelectronic applications in the ultraviolet and red spectral range has attracted significant attention in recent years. Adding boron nitride (BN) to indium gallium nitride, (In,Ga)N, alloys, can help to control the lattice mismatch between (In,Ga)N and GaN and may thus allow reduction of strain related defect formation. However, understanding of the impact of BN on the electronic properties of III-N alloys, in particular the influence of experimentally observed boron atom clustering, is sparse. This work presents first-principles calculations investigating the electronic properties of (B,In)N alloys with boron contents between 2% and 7%. Special attention is paid to the impact of the alloy microstructure. While the results show that the lattice constants of such alloys largely agree with lattice constants determined from a Vegard approximation, the electronic properties strongly depend on the local boron atom configurations. For instance, if boron atoms are dispersed throughout the structure and are not sharing nitrogen atoms, the band gap of (B,In)N alloys is largely unaffected and stays close to the gap of pristine InN. However, in the case of boron atom clustering, e.g., when boron atoms are sharing nitrogen atoms, the band gap can be strongly reduced, often leading to a metallic state in (B,In)N alloys. These strong band gap reductions are mainly driven by carrier localization effects in the valence band. The calculations thus show that the electronic structure of (B,In)N alloys strongly depends on the alloy microstructure and that boron atom clustering plays an important role in understanding the electronic and optical properties of these emerging materials.
2401.07623v1
2010-02-28
Tunable Multifunctional Topological Insulators in Ternary Heusler Compounds
Recently the Quantum Spin Hall effect (QSH) was theoretically predicted and experimentally realized in a quantum wells based on binary semiconductor HgTe[1-3]. QSH state and topological insulators are the new states of quantum matter interesting both for fundamental condensed matter physics and material science[1-11]. Many of Heusler compounds with C1b structure are ternary semiconductors which are structurally and electronically related to the binary semiconductors. The diversity of Heusler materials opens wide possibilities for tuning the band gap and setting the desired band inversion by choosing compounds with appropriate hybridization strength (by lattice parameter) and the magnitude of spin-orbit coupling (by the atomic charge). Based on the first-principle calculations we demonstrate that around fifty Heusler compounds show the band inversion similar to HgTe. The topological state in these zero-gap semiconductors can be created by applying strain or by designing an appropriate quantum well structure, similar to the case of HgTe. Many of these ternary zero-gap semiconductors (LnAuPb, LnPdBi, LnPtSb and LnPtBi) contain the rare earth element Ln which can realize additional properties ranging from superconductivity (e. g. LaPtBi[12]) to magnetism (e. g. GdPtBi[13]) and heavy-fermion behavior (e. g. YbPtBi[14]). These properties can open new research directions in realizing the quantized anomalous Hall effect and topological superconductors.
1003.0193v1
2015-04-07
Thermal Expansion of Ni-Ti-Sn Heusler and Half-Heusler Materials from First Principles Calculations and Experiments
We coupled first principles calculations and the quasiharmonic approximation combined with experiments (X-Ray diffraction and dilatometry measurements) to determine the thermal properties of NiTiSn (half-Heusler) and Ni2TiSn (Heusler) compounds. These properties are important especially if they are to be used in thermoelectric applications. First, the calculation of their mode Gruneisen parameter shows that it is positive throughout the first Brillouin zone. This suggests that these compounds undergo a regular thermal expansion. Then, the calculation of the Ni2TiSn thermal expansion shows an excellent agreement, even in the high temperature range, with our high energy powder X-Ray diffraction measurements (ESRF) and dilatometry experiments. In the case of NiTiSn, this agreement is less impressive. This could be due to stronger phonon-phonon interactions that are not considered within the quasiharmonic approximation, but also to the difficulty of making high-quality NiTiSn samples. Finally, the constant-pressure and constant-volume heat capacities have been calculated for both compounds and compared with the experimental data reported in the literature. In particular, we have decomposed the constant-volume heat capacity of Ni2TiSn into a purely electronic and a phonon-mediated contribution, and we discuss each of them.
1504.01606v1
2016-04-06
Anomalous Hall effect in Weyl semimetal half Heusler compounds RPtBi (R = Gd and Nd)
Topological materials ranging from topological insulators to Weyl and Dirac semimetals form one of the most exciting current fields in condensed-matter research. Many half-Heusler compounds, RPtBi (R= rare earth) have been theoretically predicted to be topological semimetals. Among various topological attributes envisaged in RPtBi, topological surface states, chiral anomaly and planar Hall effect have been observed experimentally. Here, we report on an unusual intrinsic anomalous Hall effect (AHE) in the antiferromagnetic Heusler Weyl semimetal compounds GdPtBi and NdPtBi that is observed over a wide temperature range. In particular, GdPtBi exhibits an anomalous Hall conductivity of up to 60 ohm-1cm-1 and an anomalous Hall angle as large as 23%. Muon spin resonance (mu-SR) studies of GdPtBi indicate a sharp antiferromagnetic transition (T_N) at 9 K without any noticeable magnetic correlations above T_N. Our studies indicate that Weyl points in these half-Heuslers are induced by a magnetic field via exchange-splitting of the electronic bands at or near to the Fermi energy which is the source of the chiral anomaly and the AHE.
1604.01641v2
2018-01-09
Epitaxial Heusler Superlattice Co2MnAl/Fe2MnAl with Perpendicular Magnetic Anisotropy and Termination-Dependent Half-Metallicity
Single-crystal Heusler atomic-scale superlattices that have been predicted to exhibit perpendicular magnetic anisotropy and half-metallicity have been successfully grown by molecular beam epitaxy. Superlattices consisting of full-Heusler Co$_2$MnAl and Fe$_2$MnAl with one to three unit cell periodicity were grown on GaAs (001), MgO (001), and Cr (001)/MgO (001). Electron energy loss spectroscopy maps confirmed clearly segregated epitaxial Heusler layers with high cobalt or high iron concentrations for samples grown near room temperature on GaAs (001). Superlattice structures grown with an excess of aluminum had significantly lower thin film shape anisotropy and resulted in an out-of-plane spin reorientation transition at temperatures below 200 K for samples grown on GaAs (001). Synchrotron-based spin resolved photoemission spectroscopy found that the superlattice structure improves the Fermi level spin polarization near the X point in the bulk Brillouin zone. Stoichiometric Co$_2$MnAl terminated superlattice grown on MgO (001) had a spin polarization of 95%, while a pure Co$_2$MnAl film had a spin polarization of only 65%.
1801.02787v1
2018-01-11
Structural, elastic, electronic, magnetic and thermoelectric properties of new quaternary Heusler compounds CoZrMnX (X=Al, Ga, Ge, In)
We have performed a comprehensive set of first principles calculations to study the structural, elastic, electronic, magnetic and transport properties of new quaternary Heusler compounds CoZrMnX (X =Al, Ga, Ge, In). The results showed that all the quaternary Heusler compounds were stable in Type(I) structure. CoZrMnX are elastically stable and relatively hard materials. CoZrMnAl, CoZrMnGa, and CoZrMnIn are found to be ductile and CoZrMnGe is brittle in nature. The calculated Debye temperatures of all compounds are relatively high. The electronic structure calculations reveal that CoZrMnAl is nearly half metallic, CoZrMnGa and CoZrMnIn are metallic, and CoZrMnGe is a narrow indirect bandgap semiconductor. The calculated magnetic properties implies that CoZrMnAl, CoZrMnGa, and CoZrMnIn are ferromagnetic while CoZrMnGe is non-magnetic material. The CoZrMnAl is highly spin-polarized (96%) and CoZrMnGe is non-spin-polarized. Seebeck coefficent (S) in CoZrMnGe is relatively high (-106 {\mu}V/K at 650K) due to its semiconducting nature. The calculated thermoelectric figure of merit CoZrMnGe is 0.1 at 600K and for CoZrMnIn it is also 0.1 at 900 K. We hope our interesting results will inspire experimentalist to synthesis the new quaternary Heusler compounds CoZrMnX (X =Al, Ga, Ge, In).
1801.03719v1
2018-03-01
Observation of Dirac state in half-Heusler material YPtBi
The prediction of non-trivial topological electronic states hosted by half-Heusler compounds makes them prime candidates for discovering new physics and devices as they harbor a variety of electronic ground states including superconductivity, magnetism, and heavy fermion behavior. Here we report normal state electronic properties of a superconducting half-Heusler compound YPtBi using angle-resolved photoemission spectroscopy (ARPES). Our data reveal the presence of a Dirac state at the zone center of the Brillouin zone at 500 meV below the chemical potential. We observe the presence of multiple Fermi surface pockets including two concentric hexagonal and six half oval shaped pockets at the gamma and K points of the Brillouin zone, respectively. Furthermore, our measurements show Rashba-split bands and multiple surface states crossing the chemical potential which are supported by the first-principles calculations. Our finding of a Dirac state in YPtBi plays a significant role in establishing half-Heusler compounds as a new potential platform for novel topological phases and explore their connection with superconductivity.
1803.00589v1
2017-02-27
Large magnetocrystalline anisotropy in tetragonally distorted Heuslers: a systematic study
With a view to the design of hard magnets without rare earths we explore the possibility of large magnetocrystalline anisotropy energies in Heusler compounds that are unstable with respect to a tetragonal distortion. We consider the Heusler compounds Fe$_2$YZ with Y = (Ni, Co, Pt), and Co$_2$YZ with Y = (Ni, Fe, Pt) where, in both cases, Z = (Al, Ga, Ge, In, Sn). We find that for the Co$_2$NiZ, Co$_2$PtZ, and Fe$_2$PtZ families the cubic phase is always, at $T=0$, unstable with respect to a tetragonal distortion, while, in contrast, for the Fe$_2$NiZ and Fe$_2$CoZ families this is the case for only 2 compounds -- Fe$_2$CoGe and Fe$_2$CoSn. For all compounds in which a tetragonal distortion occurs we calculate the MAE finding remarkably large values for the Pt containing Heuslers, but also large values for a number of the other compounds (e.g. Co$_2$NiGa has an MAE of -2.11~MJ/m$^3$). The tendency to a tetragonal distortion we find to be strongly correlated with a high density of states at the Fermi level in the cubic phase. As a corollary to this fact we observe that upon doping compounds for which the cubic structure is stable such that the Fermi level enters a region of high DOS, a tetragonal distortion is induced and a correspondingly large value of the MAE is then observed.
1702.08150v1
2019-09-27
Surface Reconstructions of Heusler Compounds in the Ni-Ti-Sn (001) System
As progress is made on thin-film synthesis of Heusler compounds, a more complete understanding of the surface will be required to control their properties, especially as functional heterostructures are explored. Here, the surface reconstructions of semiconducting half-Heusler NiTiSn(001), and Ni1+xTiSn(001) (x=0.0-1.0) are explored as a way to optimize growth conditions during molecular beam epitaxy. Density functional theory (DFT) calculations were carried out to guide the interpretation of the experimental results. For NiTiSn(001) a c(2x2) surface reconstruction was observed for Sn rich samples, while a (1x1) unreconstructed surface was observed for Ti-rich samples. A narrow range around 1:1:1 stoichiometry exhibited a (2x1) surface reconstruction. Electrical transport is used to relate the observed reflection high energy electron diffraction (RHEED) pattern during and after growth with carrier concentration and stoichiometry. Scanning tunneling microscopy and RHEED were used to examine surface reconstructions, the results of which are in good agreement with density functional calculations. X-ray photoelectron spectroscopy was used to determine surface termination and stoichiometry. Atomic surface models are proposed, which suggest Sn-dimers form in reconstructed Ni1+xTiSn(001) half-Heusler surfaces (x<0.25) with a transition to Ni terminated surfaces for x > 0.25.
1909.12487v1
2020-02-11
A simple model for vacancy order and disorder in defective half-Heusler systems
Defective half-Heusler systems X(1-x)YZ with large amounts of intrinsic vacancies, such as Nb(1-x)CoSb, Ti(1-x)NiSb and V(1-x)CoSb, are a group of promising thermoelectric materials. Even with high vacancy concentrations they maintain the average half-Heusler crystal structure. These systems show high electrical conductivity but low thermal conductivity arising from an ordered YZ lattice, which conducts electrons, while the large amounts of vacancies on the X sublattice effectively scatters phonons. Using electron scattering it was recently observed that in addition to Bragg diffraction from the average cubic half-Heusler structure, some of these samples show broad diffuse scattering indicating short-range vacancy order while other samples show sharp additional peaks, indicating long-range vacancy ordering. Here we show that both the short and long-range ordering can be explained using the same simple model, which assumes that vacancies on the X-sublattice avoid each other. The samples showing long-range vacancy order are in agreement with the predicted ground-state of the model, while short-range order samples are quenched high-temperature states of the system. A previous study showed that changes in sample stoichiometry affect whether the short or long-range vacancy structure is obtained, but the present model suggests that thermal treatment of samples should allow controlling the degree of vacancy order, and thereby the thermal conductivity, without changes in composition. This is important as the composition also dictates the amount of electrical carriers. Independent control of electrical carrier concentration and degree of vacancy order should allow further improvements in the thermoelectric properties of these systems.
2002.04281v2
2020-11-16
A high throughput search of efficient thermoelectric half-Heusler compounds
Half-Heusler compounds have emerged as promising thermoelectric materials that offer huge compositional space to tune their thermoelectric performance. A class of stable half Heusler compounds formed from elements of three specific groups in the periodic table viz. X$_{p}$X$'_{1-p}$Y$_{q}$Y$'_{1-q}$Z$_{r}$Z$'_{1-r}$ (with X, X$'$= Ti, Zr, Hf, Y, Y$'$ = Ni, Pd, Pt and Z, Z$'$ = Ge, Sn, Pb and p, q, r = 0, 0.25, 0.75 and 1) via various stoichiometric isoelectronic elemental substitution at the X, Y and Z sites respectively is investigated. Intelligent filters are employed at each step of our high throughput density functional theory calculations to filter compounds with improved figure of merit. While confirming several known results, the calculations also reveal unknown pathways to improve the thermoelectric performance of the compound class. The 50% X as well as Z site substitution of the parent Heusler individually are found to marginally enhance the power factor for both the $p$- and $n$-type doping, while leading to considerable enhancement in the figure of merit (by $\sim$24 %) specifically due to lowering of the lattice thermal conductivity because of increase in lattice disorder in approximately the same cell volume. Furthermore, the present study confirms the experimental scenario that Y site substitution does not lead to enhancement of the powerfactor because of the breaking of band degeneracies at the high symmetry points. This work will serve as a consolidated cost effective guideline for experimentalist working with this compound class on enhancing the powerfactor and figure of merit of the compositions.
2011.08134v1
2021-06-27
Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice
We describe the crystal structure and elementary magnetic properties of a previously unreported ternary intermetallic compound, Cr4PtGa17, which crystallizes in a rhombohedral unit cell in the noncentrosymmetric space group R3m. The crystal structure is closely related to those of XYZ half-Heusler compounds, where X, Y and Z are reported to be single elements only, occupying three different face-centered cubic sublattices. The new material, Cr4PtGa17, can be most straightforwardly illustrated by writing the formula as (PtGa2)(Cr4Ga14)Ga (X=PtGa2, Y = Cr4Ga14, Z = Ga), that is, the X and Y sites are occupied by clusters instead of single elements. The magnetic Cr occupies a breathing pyrochlore lattice. Ferromagnetic ordering is found below TC ~61 K, by both neutron diffraction and magnetometer studies, with a small, saturated moment of ~0.25 muB/Cr observed at 2 K, making Cr4PtGa17 the first ferromagnetically ordered material with a breathing pyrochlore lattice. A magnetoresistance of ~140% was observed at 2 K. DFT calculations suggest that the material has a nearly-half-metallic electronic structure. The new material, Cr4PtGa17, the first realization of both a half-Heusler-type structure and a breathing pyrochlore lattice, might pave a new way to achieve novel types of half-Heusler compounds.
2106.14296v2
2022-09-28
First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces
We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 $\mu_B$ are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor also decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti$_2$MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni$_2$MnIn induces in the InAs. This is explained by the position of the transition metal $d$ states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics.
2209.14101v3
2023-02-07
Colossal anomalous Hall and Nernst effect from the breaking of nodal-line symmetry in Cu2CoSn Weyl semimetal: A first-principles study
The presence of topological band crossings near the Fermi energy is essential for the realization of large anomalous transport properties in the materials. The topological semimetals (TSMs) host such properties owing to their unique topological band structure such as Weyl points or nodal lines (NLs), that is protected by certain symmetries of the crystal. When the NLs break out in the system due to perturbation in Hamiltonian, a large Berry curvature arises in the surrounding area of the gapped NL. In the present work, we studied anomalous transport properties of Cu2CoSn compound, which has a cubic Heusler crystal structure (space group: Fm-3m). The Cu2CoSn full Heusler compound possesses three NLs in the absence of spin-orbit coupling close to the Fermi level. These NLs gap out with the consideration of the SOC and a large Berry curvature observed along the gapped NLs. The integral of Berry curvature gives the intrinsic anomalous Hall conductivity (AHC) about 1003 S/cm and the anomalous Nernst conductivity (ANC) of about 3.98 A/m-K at the Fermi level. These values of AHC and ANC are comparable to the largest reported values for the Co2MnGa Heusler compound. Therefore, Cu2CoSn becomes a newborn member of the family of full Heusler compounds, which possesses giant AHC and ANC that can be useful for the spintronics application.
2302.03279v1
2023-02-09
Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface
Half-Heusler compounds with 18 valence electrons per unit cell are well-known non-magnetic semiconductors. Employing first-principles electronic band structure calculations, we study the interface properties of the half-Heusler heterojunctions based on FeVSb, CoTiSb, CoVSn, and NiTiSn compounds, which belong to this category of materials. Our results show that several of these heterojunction interfaces become not only metallic but also magnetic. The emergence of spin-polarization is accompanied by the formation of two-dimensional electron gas (2DEG) or hole gas (2DHG) at the interface. We qualitatively discuss the origin of the spin polarization at the interfaces on the basis of the Stoner model. For the cases of magnetic interfaces where half-metallicity is also present, we propose a modified Slater-Pauling rule similar to the one for bulk half-metallic half-Heusler compounds. Additionally, we calculate exchange parameters, Curie temperatures and magnetic anisotropy energies for magnetic interfaces. Our study, combined with the recent experimental evidence for the presence of 2DEG at CoTiSb/NiTiSn heterojunctions might motivate future efforts and studies toward the experimental realization of devices using the proposed heterojunctions.
2302.04563v1
2023-03-17
Intrinsic and extrinsic anomalous transport properties of Heusler ferromagnets Fe$_2$CoAl and Fe$_2$NiAl from first principles
Recently, Heusler ferromagnets have been found to exhibit unconventional anomalous electric, thermal, and thermoelectric transport properties. In this study, we employed first-principles density functional theory calculations to systematically investigate both intrinsic and extrinsic contributions to the anomalous Hall effect (AHE), anomalous Nernst effect (ANE), and anomalous thermal Hall effect (ATHE) in two Heusler ferromagnets: Fe$_2$CoAl and Fe$_2$NiAl. Our analysis reveals that the extrinsic mechanism originating from disorder dominates the AHE and ATHE in Fe$_2$CoAl , primarily due to the steep band dispersions across the Fermi energy and corresponding high longitudinal electronic conductivity. Conversely, the intrinsic Berry phase mechanism, physically linked to nearly flat bands around the Fermi energy and gapped by spin-orbit interaction band crossings, governs the AHE and ATHE in Fe$_2$NiAl. With respect to ANE, both intrinsic and extrinsic mechanisms are competing in Fe$_2$CoAl as well as in Fe$_2$NiAl. Furthermore, Fe$_2$CoAl and Fe$_2$NiAl exhibit tunable and remarkably pronounced anomalous transport properties. For instance, the anomalous Nernst and anomalous thermal Hall conductivities in Fe$_2$NiAl attain giant values of 8.29 A/Km and 1.19 W/Km, respectively, at room temperature. To provide a useful comparison, we also thoroughly investigated the anomalous transport properties of Co$_2$MnGa. Our findings suggest that Heusler ferromagnets Fe$_2$CoAl and Fe$_2$NiAl are promising candidates for spintronics and spin-caloritronics applications.
2303.09812v2
2023-06-07
Searching for ductile superconducting Heusler X2YZ compounds
Heusler compounds have always attracted a great deal of attention from researchers thanks to a wealth of interesting properties for technological applications. They are intermetallic ductile compounds, and some of them have been found to be superconducting. With this in mind, we perform an extensive study of the superconducting and elastic properties of the cubic (full-)Heusler family. Starting from thermodynamically stable compounds, we use ab initio methods for the calculation of the phonon spectra, electron-phonon couplings, superconducting critical temperatures and elastic tensors. By analyzing the statistical distributions of these properties and comparing them to anti-perovskites we recognize universal behaviors that should be common to all conventional superconductors while others turn out to be specific to the material family. The resulting data is used to train interpretable and predictive machine learning models, that are used to extend our knowledge of superconductivity in Heuslers and to provide an interpretation of our results. In total, we discover a total of 8 hypothetical materials with critical temperatures above 10 K, to be compared with the current record of Tc = 4.7 K in this family. Furthermore, we expect most of these materials to be highly ductile, making them potential candidates for the manufacture of wires and tapes for superconducting magnets.
2306.04439v1
2023-09-14
Chemical-substitution-driven giant anomalous Hall and Nernst effects in magnetic cubic Heusler compounds
Chemical substitution efficiently optimizes the physical properties of Heusler compounds, especially their anomalous transport properties, including anomalous Hall conductivity (AHC) and anomalous Nernst conductivity (ANC). This study systematically investigates the effect of chemical substitution on AHC and ANC in 1493 magnetic cubic Heusler compounds using high-throughput first-principles calculations. Notable trends emerge in Co- and Rh-based compounds, where chemical substitution effectively enhances the AHC and ANC. Intriguingly, certain chemically substituted candidates exhibit outstanding enhancement in AHCs and ANCs, such as (Co$_{0.8}$Ni$_{0.2}$)$_2$FeSn with considerable AHC and ANC values of $-2567.78$ S cm$^{-1}$ and $8.27$ A m$^{-1}$K$^{-1}$, respectively, and (Rh$_{0.8}$Ru$_{0.2}$)$_2$MnIn with an AHC of $1950.49$ S cm$^{-1}$. In particular, an extraordinary ANC of $8.57$ A m$^{-1}$K$^{-1}$ is identified exclusively in Rh$_2$Co$_{0.7}$Fe$_{0.3}$In, nearly double the maximum value of $4.36$ A m$^{-1}$K$^{-1}$ observed in the stoichiometric Rh$_2$CoIn. A comprehensive band structure analysis underscores that the notable enhancement in ANC arises from the creation and modification of the energy-dependent nodal lines through chemical substitution. This mechanism generates a robust Berry curvature, resulting in significant ANCs. These findings emphasize the pivotal role of chemical substitution in engineering high-performance materials, thereby expanding the horizons of transport property optimization within Heusler compounds.
2309.07722v3
2023-10-24
Tuning the topological character of half-Heusler systems: A comparative study on Y$T$Bi ($T$ = Pd, Pt)
Half-Heusler systems host a plethora of different ground states, especially with non-trivial topology. However, there is still a lack of spectroscopic insight into the corresponding band inversion in this family. In this work, we locally explore the half-Heuslers Y$T$Bi ($T =$ Pt and Pd) by means of scanning tunneling microscopy/spectroscopy. From our analysis of the (120) surface plane, we infer that the increase of the spin--orbit coupling upon going from Pd to Pt is the main player in tuning the surface states from trivial to topologically non-trivial. Our measurements unveil a ($2 \times 1$) reconstruction of the (120) surface of both systems. Using density functional theory calculations, we show that the observed different behavior of the local density of states near the Fermi level in these two materials is directly related to the presence of metallic surface states. Our work sheds new light on a well known tunable family of materials and opens new routes to explore the presence of topological states of matter in half-Heusler systems and its microscopic observation.
2310.15708v1
2023-11-10
Strong-coupling superconductivity of the Heusler-type compound ScAu2Al: Ab-initio studies
The ScAu$_2$Al superconducting Heusler-type compound was recently characterized to have the highest critical temperature of $T_c = 5.12$ K and the strongest electron-phonon coupling among the Heusler family. In this work, the electronic structure, phonons, electron-phonon coupling, and superconductivity of ScAu$_2$Al are studied using \textit{ab initio} calculations. The spin-orbit coupling significantly changes the electronic structure removing the van Hove singularity from the vicinity of the Fermi level. In the phonon spectrum, low frequency acoustic modes, additionally softened by the spin-orbit interaction, strongly couple with electrons, leading to the electron-phonon coupling constant $\lambda=1.25$, a record high among Heuslers. The density functional theory for superconductors is then used to analyze superconducting {state in this two-band superconductor}. The effect of spin fluctuations (SF) on superconductivity is also analyzed. The calculated critical temperatures of $T_c = 5.16$ K (4.79 K with SF) agree very well with the experiment, confirming the electron-phonon mechanism of superconductivity and showing a weak spin-fluctuations effect. The superconducting gaps formed on two Fermi surface sheets exhibit moderate anisotropy. Their magnitudes confirm the strong coupling regime, as the reduced average values are $2\Delta_1/k_BT_c \simeq 4.1$ and $2\Delta_2/k_BT_c \simeq 4.3$. Anisotropy of the gaps and large spread in their values significantly affect the calculated quasiparticle density of states.
2311.06075v3
2006-11-07
Calculated electronic and magnetic properties of the half-metallic, transition metal based Heusler compounds
In this work, results of {\it ab-initio} band structure calculations for $A_2BC$ Heusler compounds that have $A$ and $B$ sites occupied by transition metals and $C$ by a main group element are presented. This class of materials includes some interesting half-metallic and ferromagnetic properties. The calculations have been performed in order to understand the properties of the minority band gap and the peculiar magnetic behavior found in these materials. Among the interesting aspects of the electronic structure of the materials are the contributions from both $A$ and $B$ atoms to states near the Fermi energy and to the total magnetic moment. The magnitude of the total magnetic moment, which depends as well on the kind of $C$ atoms, shows a trend consistent with the Slater-Pauling type behavior in several classes of these compounds. The localized moment in these magnetic compounds resides at the $B$ site. Other than in the classical Cu$_2$-based Heusler compounds, the $A$ atoms in Co$_2$, Fe$_2$, and Mn$_2$ based compounds may contribute pronounced to the total magnetic moment.
0611179v1
2009-04-27
Exchange stiffness in Co$_{2}$-based Heusler compounds
We determine the spin wave exchange stiffness $D$ and the exchange constant $A$ for the full Heusler compound \CFS using Brillouin light scattering spectroscopy. We find an extraordinarily large value of $D=715\pm20$ meV \AA$^2$ ($A=31.5\pm1.0$ pJ/m) which is, to the best of our knowledge, only surpassed by the intermetallic compound Fe$_{53}$Co$_{47}$ (J. Appl. Phys. \textbf{75}, 7021 (1994)). Furthermore, we provide a systematization of the exchange stiffnesses determined for a variety of Co$_2$-based Heusler compounds. We find that for the investigated compounds, the exchange stiffness is a function of the valence electron concentration and the crystallographic ordering. The exchange stiffness increases when the valence electron concentration and/or the amount of the L2$_1$ ordering increase. A qualitative explanation for the dependence on the valence electron concentration is provided.
0904.4194v1
2010-04-07
Single-Dirac-cone Z2 topological insulator phases in distorted Li2AgSb-class and related quantum critical Li-based spin-orbit compounds
We have extended our new materials class search for the experimental realization of Z2 topological insulators from binary [Bi2Se3-class, Xia et.al., Nature Phys. 5, 398 (2009)] and the ternary [Half-Heusler class, Lin et.al., arXiv:1003.0155v1 (2010); arXiv:1003.2615v1 (2010)] series to non-Heusler Li-based ternary intermetallic series Li2M'X ($M'$=Cu, Ag, and Au, $X$=Sb and Bi) with CuHg2Ti-type structure. We discovered that the distorted-Li2AgSb is a lightweight compound harboring a 3D topological insulator state with Z2=-1 although the groundstate lies near a critical point, whereas the related Li2CuSb-type compounds are topologically trivial. Non-Heusler ternary Li2M'X series (with a number of variant compounds) we identified here is a new platform for deriving novel stoichiometric compounds, artificial quantum-well/heterostructures, nano-wires, nano-ribbons and nanocrystals. We have grown some of these bulk materials (experimental results will be reported separately).
1004.0999v1
2010-07-31
Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators
Using first-principles calculations within density functional theory, we explore the feasibility of converting ternary half-Heusler compounds into a new class of three-dimensional topological insulators (3DTI). We demonstrate that the electronic structure of unstrained LaPtBi as a prototype system exhibits distinct band-inversion feature. The 3DTI phase is realized by applying a uniaxial strain along the [001] direction, which opens a bandgap while preserving the inverted band order. A definitive proof of the strained LaPtBi as a 3DTI is provided by directly calculating the topological Z2 invariants in systems without inversion symmetry. We discuss the implications of the present study to other half-Heusler compounds as 3DTI, which, together with the magnetic and superconducting properties of these materials, may provide a rich platform for novel quantum phenomena.
1008.0057v1
2010-11-05
Magnetic microstructure and magnetotransport in Co2FeAl Heusler compound thin films
We correlate simultaneously recorded magnetotransport and spatially resolved magneto optical Kerr effect (MOKE) data in Co2FeAl Heusler compound thin films micropatterned into Hall bars. Room temperature MOKE images reveal the nucleation and propagation of domains in an externally applied magnetic field and are used to extract a macrospin corresponding to the mean magnetization direction in the Hall bar. The anisotropic magnetoresistance calculated using this macrospin is in excellent agreement with magnetoresistance measurements. This suggests that the magnetotransport in Heusler compounds can be adequately simulated using simple macrospin models, while the magnetoresistance contribution due to domain walls is of negligible importance.
1011.1417v1
2011-07-31
Room-temperature generation of giant pure spin currents using Co$_2$FeSi spin injectors
Generation, manipulation, and detection of a pure spin current, i.e., the flow of spin angular momentum without a charge current, are prospective approaches for realizing next-generation spintronic devices with ultra low electric power consumptions. Conventional ferromagnetic electrodes such as Co and NiFe have so far been utilized as a spin injector for generating the pure spin currents in nonmagnetic channels. However, the generation efficiency of the pure spin currents is extremely low at room temperature, giving rise to a serious obstacle for device applications. Here, we demonstrate the generation of giant pure spin currents at room temperature in lateral spin valve devices with a highly ordered Heusler-compound Co$_2$FeSi spin injector. The generation efficiency of the pure spin currents for the Co$_2$FeSi spin injectors reaches approximately one hundred times as large as that for NiFe ones, indicating that Heusler-compound spin injectors enable us to materialize a high-performance lateral spin device. The present study is a technological jump in spintronics and indicates the great potential of ferromagnetic Heusler compounds with half metallicity for generating pure spin currents.
1108.0156v2
2011-11-03
Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of Co$_{2}$FeSi and Fe$_{3}$Si
We study room-temperature generation and detection of pure spin currents using lateral spin-valve devices with Heusler-compound electrodes, Co$_{2}$FeSi (CFS) or Fe$_{3}$Si (FS). The magnitude of the nonlocal spin-valve (NLSV) signals is seriously affected by the dispersion of the resistivity peculiarly observed in the low-temperature grown Heusler compounds with ordered structures. From the analysis based on the one-dimensional spin diffusion model, we find that the spin polarization monotonically increases with decreasing the resistivity, which depends on the structural ordering, for both CFS and FS electrodes, and verify that CFS has relatively large spin polarization compared with FS.
1111.0742v2
2012-10-17
GW study of the half-metallic Heusler compounds Co2MnSi and Co2FeSi
Quasiparticle spectra of potentially half-metallic Co2MnSi and Co2FeSi Heusler compounds have been calculated within the one-shot GW approximation in an all-electron framework without adjustable parameters. For Co2FeSi the many-body corrections are crucial: a pseudogap opens and good agreement of the magnetic moment with experiment is obtained. Otherwise, however, the changes with respect to the density-functional-theory starting point are moderate. For both cases we find that photoemission and x-ray absorption spectra are well described by the calculations. By comparison with the GW density of states, we conclude that the Kohn-Sham eigenvalue spectrum provides a reasonable approximation for the quasiparticle spectrum of the Heusler compounds considered in this work.
1210.4776v1
2012-10-29
Modified Becke-Johnson potential investigation of half-metallic Heusler compounds
We have investigated the electronic structures of various potentially half-metallic Heusler compounds with the Tran-Blaha modified Becke-Johnson (TB-mBJLDA) potential within the density functional theory. The half-metallic gaps are considerably enhanced with respect to values from the Perdew-Burke-Ernzerhof (PBE) functional. In particular the unoccupied densities of states are modified by mBJLDA, and agreement with experiment is considerably worse than for PBE. The agreement of the densities of states can be improved by reducing the Tran-Blaha parameter c. However, ground state properties such as the hyperfine fields are more accurately described by PBE than by mBJLDA. Despite its success for ionic and covalent semiconductors and insulators, we conclude that mBJLDA is not a suitable approximation for half-metallic Heusler compounds.
1210.7738v1
2012-11-02
Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers
All-Heusler multilayer structures have been investigated by means of high kinetic x-ray photoelectron spectroscopy and x-ray magnetic circular dichroism, aiming to address the amount of disorder and interface diffusion induced by annealing of the multilayer structure. The studied multilayers consist of ferromagnetic Co$_2$MnGe and non-magnetic Rh$_2$CuSn layers with varying thicknesses. We find that diffusion begins already at comparably low temperatures between 200 $^{\circ}$C and 250 $^{\circ}$C, where Mn appears to be most prone to diffusion. We also find evidence for a 4 {\AA} thick magnetically dead layer that, together with the identified interlayer diffusion, are likely reasons for the small magnetoresistance found for current-perpendicular-to-plane giant magneto-resistance devices based on this all-Heusler system.
1211.0489v2
2013-03-03
High spin polarization of the anomalous Hall current in Co-based Heusler compounds
Based on first principles density functional calculations of the intrinsic anomalous and spin Hall conductivities, we predict that the charge Hall current in Co-based full Heusler compounds Co$_2$XZ (X = Cr and Mn; Z = Al, Si, Ga, Ge, In and Sn) except Co$_2$CrGa would be almost fully spin-polarized even although Co$_2$MnAl, Co$_2$MnGa, Co$_2$MnIn and Co$_2$MnSn do not have a half-metallic band structure. Furthermore, the ratio of the associated spin current to the charge Hall current is slightly larger than 1.0. This suggests that these Co-based Heusler compounds, especially Co$_2$MnAl, Co$_2$MnGa and Co$_2$MnIn which are found to have large anomalous and spin Hall conductivities, might be called anomalous Hall half-metals and could have valuable applications in spintronics such as spin valves as well as magnetoresistive and spin-torque driven nanodevices. These interesting findings are discussed in terms of the calculated electronic band structures, magnetic moments and also anomalous and spin Hall conductivities as a function of the Fermi level.
1303.0509v1
2013-07-11
Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators
We report the observation of a large linear magnetoresistance (MR) and Shubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBi Heusler topological insulators. Owning to the successfully obtained the high-quality YPdBi single crystals, large non-saturating linear MR of as high as 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T is observed. In addition to the large, field-linear MR, the samples exhibit pronounced SdH quantum oscillations at low temperature. Analysis of the SdH data manifests that the high-mobility bulk electron carriers dominate the magnetotransport and are responsible for the observed large linear MR in YPdBi crystals. These findings imply that the Heusler-based topological insulators have superiorities for investigating the novel quantum transport properties and developing the potential applications.
1307.3022v1
2013-07-25
Plasmon dispersions in simple metals and Heusler compounds
We present a comprehensive study of plasmon dispersions in simple metals and Heusler compounds based on an accurate ab-initio evaluation of the momentum and frequency dependent dielectric function in the random-phase approximation. Using a momentum-dependent tetrahedron method for the computation of the dielectric function, we extract and analyze "full" and "intraband" plasmon dispersions: The "full" plasma dispersion is obtained by including all bands, the intraband plasma dispersion by including only intraband transitions. For the simple metals silver and alu- minum, we show that the intraband plasmon dispersion has an unexpected downward slope and is therefore markedly different from the results of an effective-mass electron-gas model and the full plasmon dispersion. For the two Heusler compounds Co2FeSi and Co2MnSi, we present spectra for the dielectric function, their loss functions and plasmon dispersions. The latter exhibit the same negative intraband plasmon dispersion as found in the simple metals. We also discuss the influence of spin-mixing on the plasmon dispersion.
1307.6844v1
2013-10-17
A new class of topological insulators from I-III-IV half-Heusler compounds with strong band inversion strength
In this paper, by first principle calculations, we investigate systematically the band topology of a new half-Heusler family with composition of I(A)-III(A)-IV(A). The results clearly show that many of the I-III-IV half-Heusler compounds are in fact promising to be topological insulator candidates. The characteristic feature of these new topological insulators is the naturally strong band inversion strength (up to -2eV) without containing heavy elements. Moreover, we found that both the band inversion strength and the topological insulating gap can be tailored through strain engineering, and therefore would be grown epitaxially in the form of films, and useful in spintronics and other applications.
1310.4696v1
2014-08-25
Nanograined half-Heusler semiconductors as advanced thermoelectrics: an ab-initio high-throughput statistical study
Nanostructuring has spurred a revival in the field of direct thermoelectric energy conversion. Nanograined materials can now be synthesized with higher figures of merit (ZT) than the bulk counterparts. This leads to increased conversion efficiencies. Despite considerable effort in optimizing the known and discovering the unknown, technology still relies upon a few limited solutions. Here we perform ab-initio modeling of ZT for 75 nanograined compounds obtained by filtering down the 79,057 half-Heusler entries available in the AFLOWLIB.org repository according to electronic and thermodynamic criteria. For many of the compounds the $ZT$s are markedly above those attainable with nanograined IV and III-V semiconductors. About 15% of them may even outperform ZT~2 at high temperatures. Our analysis elucidates the origin of the advantageous thermoelectric properties found within this broad material class. We use machine learning techniques to unveil simple rules determining if a nanograined half-Heusler compound is likely to be a good thermoelectric given its chemical composition.
1408.5859v1
2015-02-06
Long-term stability of phase-separated Half-Heusler compounds
Half-Heusler (HH) compounds have shown high Figure of merits up to 1.5. The key to these high thermoelectric efficiencies is an intrinsic phase separation, which occurs in multicomponent Half-Heusler compounds and leads to an significantly reduction of the thermal conductivity. For commercial applications, compatible n- and p-type materials are essential and their thermal stability under operating conditions, e.g. for an automotive up to 873 K, needs to be guaranteed. For the first time, the long-term stability of n- and p-type HH materials is proved. We investigated HH materials based on the Ti0.3Zr0.35Hf0.35NiSn-system after 500 cycles (1700 h) from 373 to 873 K. Both compounds exhibit a maximum Seebeck coefficient of S around 210 muV/K and an intrinsic phase separation into two HH phases. The dendritic microstructure is temperature resistant and maintained the low thermal conductivity values (kappa less than 4 W/Km). Our results emphasize that phase-separated HH compounds are suitable low cost materials and can lead to enhanced thermoelectric efficiencies beyond the set benchmark for industrial applications.
1502.01828v1
2015-06-11
Magnetism in tetragonal manganese-rich Heusler compounds
A comprehensive study of the total energy of manganese-rich Heusler compounds using density functional theory is presented. Starting from a large set of cubic parent systems, the response to tetragonal distortions is studied in detail. We single out the systems that remain cubic from those that most likely become tetragonal. The driving force of the tetragonal distortion and its effect on the magnetic properties, especially where they deviate from the Slater--Pauling rule, as well as the trends in the Curie temperatures, are highlighted. By means of partial densities of states, the electronic structural changes reveal the microscopic origin of the observed trends. We focus our attention on the magnetocrystalline anisotropy and find astonishingly high values for tetragonal Heusler compounds containing heavy transition metals accompanied by low magnetic moments, which indicates that these materials are promising candidates for spin-transfer torque magnetization-switching applications.
1506.03735v1
2015-07-30
First principle investigations of the structural, electronic and magnetic properties of the new zirconium based full-Heusler compounds, Zr2MnZ (Z = Al, Ga and In)
The crystal structure, electronic and magnetic properties of the new full-Heusler compounds Zr2MnZ (Z=Al, Ga, In), were studied within the Density Functional Theory (DFT) framework. The materials exhibit unique properties that connect the spin gapless semiconducting character with the completely compensated ferrimagnetism. In magnetic configurations, Zr2MnZ (Z=Al, Ga, In) crystallize in inverse Heusler structure, are stable against decomposition and have zero magnetic moment per formula unit properties, in agreement with Slater-Pauling rule. The Zr2MnAl compound presents spin gapless semiconducting properties with a energy band gap of 0.41 eV in the majority spin channel and a zero band gap in the minority spin channel. By substituting Ga or In elements, for Al in Zr2MnAl, semiconducting pseudo band gaps are formed in the majority spin channels due to the different neighborhood around the manganese atoms, which decreases the energy of Mn's triple degenerated anti-bonding states.
1507.08605v2
2015-11-10
Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal
High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized by a Bi self-flux method. This compound was revealed to be a hole-dominated semimetal with a large low-field magnetoresistance up to 240% at 2K in a magnetic field of 1T. Magneto-transport measurements demonstrated that the large low-field magnetoresistance effect resulted from the coexistence of field-induced metal-semiconductor transition and weak-antilocalization effect. Moreover, Hall measurements indicated that ScPtBi single crystal showed a high mobility over a wide temperature region even up to room temperature (4050 cm2V-1s-1 at 2K - 2016 cm2V-1s-1 at 300K). These findings not only suggest the nonmagnetic ScPtBi semimetal a potential material candidate for applications in high-sensitivity magnetic sensors, but also are of great significance to comprehensively understand the rare-earth based half-Heusler compounds.
1511.03017v1
2016-01-28
LaPtSb: a half-Heusler compound with high thermoelectric performance
The electronic and transport properties of the half-Heusler compound LaPtSb are investigated by performing first-principles calculations combined with semi-classical Boltzmann theory and deformation potential theory. Compared with many typical half-Heusler compounds, the LaPtSb exhibits obviously larger power factor at room temperature, especially for the n-type system. Together with the very low lattice thermal conductivity, the thermoelectric figure of merit (ZT) of LaPtSb can be optimized to a record high value of 2.2 by fine tuning the carrier concentration.
1601.07690v4
2016-04-13
Ultralow Thermal Conductivity in Full-Heusler Semiconductors
Semiconducting half- and, to a lesser extent, full-Heusler compounds are promising thermoelectric materials due to their compelling electronic properties with large power factors. However, intrinsically high thermal conductivity resulting in a limited thermoelectric efficiency has so far impeded their widespread use in practical applications. Here, we report the computational discovery of a class of hitherto unknown stable semiconducting full-Heusler compounds with ten valence electrons ($X_2YZ$, $X$=Ca, Sr, and Ba; $Y$= Au and Hg; $Z$=Sn, Pb, As, Sb, and Bi) through high-throughput $ab-initio$ screening. These new compounds exhibit ultralow lattice thermal conductivity $\kappa_{\text{L}}$ close to the theoretical minimum due to strong anharmonic rattling of the heavy noble metals, while preserving high power factors, thus resulting in excellent phonon-glass electron-crystal materials.
1604.03827v2
2016-04-18
Itinerant G-type antiferromagnetism in D0$_3$-type V$_3$Z (Z=Al, Ga, In) compounds: A first-principles study
Heusler compounds are widely studied due to their variety of magnetic properties making them ideal candidates for spintronic and magnetoelectronic applications. V$_3$Al in its metastable D0$_3$-type Heusler structure is a prototype for a rare antiferromagnetic gapless behavior. We provide an extensive study on the electronic and magnetic properties of V$_3$Al, V$_3$Ga and V$_3$In compounds based on state-of-the-art electronic structure calculations. We show that the ground state for all three is a G-type itinerant antiferromagnetic gapless semiconductor. The large antiferromagnetic exchange interactions lead to very high N\'eel temperatures, which are predicted to be around 1000 K. The coexistence of the gapless and antiferromagnetic behaviors in these compounds can be explained considering the simultaneous presence of three V atoms at the unit cell using arguments which have been employed for usual inverse Heusler compounds. We expect that our study on these compounds to enhance further the interest on them towards the optimization of their growth conditions and their eventual incorporation in devices.
1604.05137v1
2017-07-10
Inflated nodes and surface states in superconducting half-Heusler compounds
Two topics of high current interest in the field of unconventional superconductivity are non-centrosymmetric superconductors and multiband superconductivity. Half-Heusler superconductors such as YPtBi exemplify both. In this paper, we study bulk and surface states in nodal superconducting phases of the half-Heusler compounds, belonging to the $A_1$ ($s+p$-like) and $T_2$ ($k_zk_x+ik_zk_y$-like) irreducible representations of the point group. These two phases preserve and break time-reversal symmetry, respectively. For the $A_1$ case, we find that flat surface bands persist in the multiband system. In addition, the system has dispersive surface bands with zero-energy crossings forming Fermi arcs, which are protected by mirror symmetries. For the $T_2$ case, there is an interesting coexistence of point and line nodes, known from the single-band case, with Bogoliubov Fermi surfaces (two-dimensional nodes). There are no flat-band surface states, as expected, but dispersive surface bands with Fermi arcs exist. If these arcs do not lie in high-symmetry planes, they are split by the antisymmetric spin-orbit coupling so that their number is doubled compared to the inversion-symmetric case.
1707.02739v2
2018-01-31
Unconventional superconductivity and Surface pairing symmetry in Half-Heusler Compounds
Signatures of nodal line/point superconductivity have been observed in half-Heusler compounds, such as LnPtBi (Ln = Y, Lu). Topologically non-trivial band structures, as well as topological surface states, has also been confirmed by angular-resolved photoemission spectroscopy in these compounds. In this work, we present a systematical classification of possible gap functions of bulk states and surface states in half-Heusler compounds and the corresponding topological properties based on the representations of crystalline symmetry group. Different from all the previous studies based on four band Luttinger model, our study starts with the six-band Kane model, which involves both four p-orbital type of {\Gamma}8 bands and two s-orbital type of {\Gamma}6 bands. Although the {\Gamma}6 bands are away from the Fermi energy, our results reveal the importance of topological surface states, which originate from the band inversion between {\Gamma}6 and {\Gamma}8 bands, in determining surface properties of these compounds in the superconducting regime by combining topological bulk state picture and non-trivial surface state picture.
1801.10286v1
2018-03-27
Subamorphous thermal conductivity of crystalline half-Heusler superlattices
The quest to improve the thermoelectric figure of merit has mainly followed the roadmap of lowering the thermal conductivity while keeping unaltered the power factor of the material. Ideally an electron-crystal phonon-glass system is desired. In this work, we report an extraordinary reduction of the cross-plane thermal conductivity in crystalline (TiNiSn):(HfNiSn) half-Heusler superlattices. We create SLs with thermal conductivities below the effective amorphous limit, which is kept in a large temperature range (120-300 K). We measured thermal conductivity at room temperature values as low as 0.75 W/(m K), the lowest thermal conductivity value reported so far for half-Heusler compounds. By changing the deposition conditions, we also demonstrate that the thermal conductivity is highly impacted by the way the single segments of the superlattice grow. These findings show a huge potential for thermoelectric generators where an extraordinary reduction of the thermal conductivity is required but without losing the crystal quality of the system.
1803.09920v2
2020-01-20
Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistors
Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to design within the same family of compounds HMMs and SGSs with similar lattice constants to make coherent growth of the consecutive spacers of the device possible. Employing state-of-the-art first-principles calculations, we scan the quaternary Heusler compounds and identify suitable candidates for these spintronic devices combining the desirable properties: (i) HMMs with sizable energy gap or SGSs with spin gaps both below and above the Fermi level, (ii) high Curie temperature, (iii) convex hull energy distance less than 0.20 eV, and (iv) negative formation energies. Our results pave the way for the experimental realization of the proposed magnetic tunnel diodes and transistors.
2001.07029v1
2017-04-04
Model Hamiltonian and Time Reversal Breaking Topological Phases of Anti-ferromagnetic Half-Heusler Materials
In this work, we construct a generalized Kane model with a new coupling term between itinerant electron spins and local magnetic moments of anti-ferromagnetic ordering in order to describe the low energy effective physics in a large family of anti-ferromagnetic half-Heusler materials. Topological properties of this generalized Kane model is studied and a large variety of topological phases, including Dirac semimetal phase, Weyl semimetal phase, nodal line semimetal phase, type-B triple point semimetal phase, topological mirror (or glide) insulating phase and anti-ferromagnetic topological insulating phase, are identified in different parameter regions of our effective models. In particular, we find that the system is always driven into the anti-ferromagnetic topological insulator phase once a bulk band gap is open, irrespective of the magnetic moment direction, thus providing a robust realization of anti-ferromagentic topological insulators. Furthermore, we discuss the possible realization of these topological phases in realistic anti-ferromagnetic half-Heusler materials. Our effective model provides a basis for the future study of physical phenomena in this class of materials.
1704.01138v1