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2012-04-16
Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices
Complementary resistive switches (CRS) are considered as a potential solution for the sneak path problem in large-scale integration of passive crossbar resistive memory arrays. A typical CRS is composed of two bipolar memory cells that are connected anti-serially. Here we report a tantalum-oxide based resistive memory ...
1204.3515v2
2014-03-16
InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes
InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage dro...
1403.3932v1
2014-12-01
Resistivity minimum in strongly phase separated manganite thin films: impact of intrinsic and extrinsic perturbations
The origin of the resistivity minimum observed in strongly phase separated manganites has been investigated in single crystalline thin films of LPCMO (x~0.42, y~0.40). The antiferromagnetic/charge ordered insulator (AFM/COI)-ferromagnetic metal (FMM) phase transition, coupled with the colossal hysteresis between the fi...
1412.0418v1
2015-01-05
Reversed anisotropy of the in-plane resistivity in the antiferromagnetic phase of iron tellurides
We systematically investigated the anisotropic in-plane resistivity of the iron telluride including three kinds of impurity atoms: excess Fe, Se substituted for Te, and Cu substituted for Fe. Sizable resistivity anisotropy was found in the magneto-structurally ordered phase whereas the sign is opposite ($\rho_a$ $>$ $\...
1501.00774v1
2015-05-21
Resistance minimum and electrical conduction mechanism in polycrystalline CoFeB thin films
The temperature dependent resistance $R$($T$) of polycrystalline ferromagnetic CoFeB thin films of varying thickness are analyzed considering various electrical scattering processes. We observe a resistance minimum in $R$($T$) curves below $\simeq$ 29 K, which can be explained as an effect of intergranular Coulomb inte...
1505.05711v2
2015-10-29
Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder
Magnetoresistance and Hall resistance measurements have been carried out in fastcooled single crystals of Bi2Se3-xTex (x: 0 to 2) in 4 to 300 K temperature range, under magnetic fields up to 15 T. The variation of resistivity with temperature that points to a metallic behaviour in Bi2Se3, shows an upturn at low tempera...
1510.08561v1
2015-12-10
Mini array of quantum Hall devices based on epitaxial graphene
Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at filling factor i = 2 starting from relatively low magnetic field (between 4 T and 5 ...
1512.03163v2
2016-01-04
Making Consistent Contacts to Graphene: Effect of Architecture and Growth Induced Defects
The effect of contact architecture, graphene defect density and metal-semiconductor work function difference on resistivity of metal-graphene contacts have been investigated. An architecture with metal on the bottom of graphene is found to yield resistivities that are lower, by a factor of 4, and most consistent as com...
1601.00429v1
2016-06-13
Effect of interstitial impurities on the field dependent microwave surface resistance of niobium
Previous work has demonstrated that the radio frequency surface resistance of niobium resonators is dramatically reduced when nitrogen impurities are dissolved as interstitial in the material. The origin of this effect is attributed to the lowering of the Mattis and Bardeen surface resistance contribution with increasi...
1606.04174v1
2016-10-18
Dichotomy between in-plane magnetic susceptibility and resistivity anisotropies in extremely strained $BaFe_{2}As_{2}$
The in-plane resistivity and uniform magnetic susceptibility anisotropies of $BaFe_{2}As_{2}$ are obtained with a new method, in which a large symmetry-breaking uniaxial strain is applied using a substrate with a very anisotropic thermal expansion. The resistivity anisotropy and its corresponding elastoresistivity exhi...
1610.05575v2
2016-12-15
Reaction-Drift Model for Switching Transients in Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ Based Resistive RAM
Earlier, the DC hole-current modeling of PCMO RRAM by drift-diffusion (DD) including self-heating (SH) in TCAD (but without ionic transport) was able to explain the experimentally observed SCLC characteristics, prior to resistive switching. Further, transient analysis using DD+SH model was able to reproduce the experim...
1612.05293v2
2018-06-20
Domain wall resistance in CoFeB-based heterostructures with interface Dzyaloshinskii-Moriya interaction
We have studied the domain wall resistance in W/Ta/CoFeB/MgO heterostructures. The Ta layer thickness is varied to control the type of domain walls via changes in the interfacial Dzyaloshinskii Moriya interaction. We find a nearly constant domain wall resistance against the Ta layer thickness. Adding contributions from...
1806.07750v1
2019-02-12
Designing multi-level resistance states for multi-bit storage using half doped manganites
Designing nonvolatile multi-level resistive devices is the necessity of time to go beyond traditional one-bit storage systems, thus enhancing the storage density. Here, we explore the electronic phase competition scenario to design multi-level resistance states using a half doped CE-type charge ordered insulating bulk ...
1902.04377v1
2019-03-02
On the origin of the anomalous peak in the resistivity of TiSe$_2$
Resistivity measurements of TiSe$_2$ typically show only a weak change in gradient at the charge density wave transition at $T_{CDW}\approx$ 200~K, but more prominently feature a broad peak at a lower $T_{peak}\sim$ 165~K, which has remained poorly understood despite decades of research on the material. Here we present...
1903.00756v1
2012-06-13
Modelling of Current Percolation Channels in Emerging Resistive Switching Elements
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory elements. Identifying the vital physical mechanisms behind resistive switching ...
1206.2746v1
2019-06-07
Extended Nyquist formula for a resistance subject to a heat flow
The Nyquist formula quantifies the thermal noise driven fluctuations of voltage across a resistance in equilibrium. We deal here with the case of a resistance driven out of equilibrium by putting it in contact with two thermostats at different temperatures. We reach a non-equilibrium steady state where a heat flux is f...
1906.02974v2
2020-06-22
Optimal design of a bilayer for the highest thermal resistance: A lesson learned from the shells of snails from hydrothermal extreme environment
Inspired by the unique design of the shells of snails inhabiting the deep-sea hydrothermal environment, here we theoretically study the temperature response of a bilayer to an external thermal impulse. A semi-analytical solution to the temperature field in the bilayer is obtained, allowing us to assess the peak tempera...
2006.11987v1
2020-11-01
Reduction of interfacial thermal resistance of overlapped graphene by bonding carbon chains
Exploring the mechanism of interfacial thermal transport and reducing the interfacial thermal resistance is of great importance for thermal management and modulation. Herein, the interfacial thermal resistance between overlapped graphene nanoribbons is largely reduced by adding bonded carbon chains by performing molecu...
2011.00494v1
2021-04-15
Origins of anisotropic transport in electrically-switchable antiferromagnet $\mathrm{Fe_1/3NbS_2}$
Recent experiments on the antiferromagnetic intercalated transition metal dichalcogenide $\mathrm{Fe_{1/3}NbS_2}$ have demonstrated reversible resistivity switching by application of orthogonal current pulses below its magnetic ordering temperature, making $\mathrm{Fe_{1/3}NbS_2}$ promising for spintronics applications...
2104.07591v1
2021-08-01
First-principles study on the electrical resistivity in zirconium dichalcogenides with multi-valley bands: mode-resolved analysis of electron-phonon scattering
Based on the first-principles calculations, we study the electron-phonon scattering effect on the resistivity in the zirconium dichalcogenides, $\text{Zr}_{}\text{S}_{2}$ and $\text{Zr}_{}\text{Se}_{2}$, whose electronic band structures possess multiple valleys at conduction band minimum. The computed resistivity exhib...
2108.00474v1
2024-02-15
What can we learn from nonequilibrium response of a strange metal?
We critically address the recent experiment [Science 382, 907 (2023)] on nonequilibrium transport and noise in a strange metal YbRh2Si2 patterned into the nanowire shape. In the long device, resistivity, differential resistance and current noise data seem to be consistent allowing us to extract electron-phonon coupling...
2402.09946v1
2023-07-27
Reduced stress propagation leads to increased mechanical failure resistance in auxetic materials
Materials with negative Poisson ratio have the counter-intuitive property of expanding laterally when they are stretched longitudinally. They are accordingly termed auxetic, from the Greek auxesis meaning to increase. Experimental studies have demonstrated auxetic materials to have superior material properties, compare...
2307.14914v2
2014-11-28
Signature of high Tc around 25K in higher quality heavily boron-doped diamond
Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron con...
1411.7752v1
2019-08-21
Fatigue-resistant high-performance elastocaloric materials via additive manufacturing
Elastocaloric cooling, which exploits the latent heat released and absorbed as stress-induced phase transformations are reversibly cycled in shape memory alloys, has recently emerged as a frontrunner in non-vapor-compression cooling technologies. The intrinsically high thermodynamic efficiency of elastocaloric material...
1908.07900v1
2019-07-31
Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field effect transistors, for example, have been extensively investigated for high-power and high-frequency electronic applications. The qual...
1907.13500v2
2021-12-08
High-Mg Calcite Nanoparticles Within a Low-Mg Calcite Matrix via Spinodal Decomposition: A Widespread Phenomenon in Biomineralization
During the process of biomineralization, organisms utilize various biostrategies to enhance the mechanical durability of their skeletons. In this work, we establish that the presence of high-Mg nanoparticles embedded within lower Mg calcite matrices is a widespread strategy utilized by various organisms from different ...
2112.04141v1
2022-08-11
Superconductivity above 80 K in polyhydrides of hafnium
Studies on polyhydrides are attracting growing attentions recently due to their potential high temperature superconductivity (SC). We here report the discovery of SC in hafnium polyhydrides at high pressures. The hafnium superhydrides are synthesized at high pressure and high temperature conditions using diamond anvil ...
2208.05816v2
2001-05-16
Superconducting properties of well-shaped MgB2 single crystal
We report measurements of the transport and the magnetic properties of high-quality, sub-millimeter-sized MgB2 single crystals with clear hexagonal-plate shapes. The low-field magnetization and the magnetic hysteresis curves show the vortex pinning of these crystals to be very weak. The Debye temperature of $\Theta_{D}...
0105330v7
2003-09-24
Quantum Effects in Thermal Conductivity of Solid Krypton - Methane Solutions
The dynamic interaction of a quantum rotor with its crystalline environment has been studied by measurement of the thermal conductivity of solid Kr1_c(CH4)_c solutions at c = 0.05-0.75 in the temperature region from 2 up to 40K. The thermal resistance of the solutions was mainly determined by the resonance scattering o...
0309542v1
2005-05-19
Strongly correlated properties of the thermoelectric cobalt oxide Ca3Co4O9
We have performed both in-plane resistivity, Hall effect and specific heat measurements on the thermoelectric cobalt oxide Ca$_{3}$Co$_{4}$O$_{9}$. Four distinct transport regimes are found as a function of temperature, corresponding to a low temperature insulating one up to $T_{min}\approx $63 K, a strongly correlated...
0505464v1
2005-10-03
New Misfit-Layered Cobalt Oxide (CaOH)1.14CoO2
We found a new cobalt oxide (CaOH)1.14CoO2 by utilizing the high-pressure technique. X-ray and electron diffraction studies revealed that the compound has layer structure which consists of CdI2-type CoO2 layers and rock-salt-type double CaOH atomic layers. The two subcells have incommensurate periodicity along the a-ax...
0510031v1
2007-09-12
The Hot-Spot Phenomenon and its Countermeasures in Bipolar Power Transistors by Analytical Electro-Thermal Simulation
This communication deals with a theoretical study of the hot spot onset (HSO) in cellular bipolar power transistors. This well-known phenomenon consists of a current crowding within few cells occurring for high power conditions, which significantly decreases the forward safe operating area (FSOA) of the device. The stu...
0709.1831v1
2007-09-14
An inhomogeneous Josephson phase in thin-film and High-Tc superconductors
In many cases inhomogeneities are known to exist near the metal (or superconductor)-insulator transition, as follows from well-known domain-wall arguments. If the conducting regions are large enough (i.e. when the T=0 superconducting gap is much larger than the single-electron level spacing), and if they have supercond...
0709.2321v1
2009-03-18
Two-dimensional electrochemical model for mixed conductors: a study of ceria
A two-dimensional small bias model has been developed for a patterned metal current collector $|$ mixed oxygen ion and electronic conductor (MIEC) $|$ patterned metal current collector electrochemical cell in a symmetric gas environment. Specifically, we compute the electrochemical potential distributions of oxygen vac...
0903.3250v1
2009-11-11
The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)
This paper reports the synthesis and superconducting behaviors of the tetragonal iron-chalcogenide superconductor FeSe. The electrical resistivity and magnetic moment measurements confirmed its superconductivity with a $T_c^{zero}$ and $T_c^{mag}$ at 9.4 K under ambient pressure. EPMA indicated the sample to have a sto...
0911.2045v2
2010-07-22
Anisotropic fluctuations and quasiparticle excitations in FeSe_0.5Te_0.5
We present data for the temperature dependence of the magnetic penetration depth lambda(T), heat capacity C(T), resistivity R(T) and magnetic torque ?tau for highly homogeneous single crystal samples of Fe1:0Se0:44(4)Te0:56(4). lambda(T) was measured down to 200mK in zero field. We find lambda(T) follows a power law la...
1007.3914v2
2010-11-09
Frustrated Metastable Behavior of Magnetic and Transport Properties in Charge Ordered La1-xCaxMnO3+d Manganites
We have studied the effect of metastable, irreversibility induced by repeated thermal cycles on the electric transport and magnetization of polycrystalline samples of La1-xCaxMnO3 (0.48\leq x \leq 0.55) close to charge ordering. With time and thermal cycling (T<300 K) there is an irreversible transformation of the low-...
1011.2179v1
2011-05-17
The metallic transport of (TMTSF)_2X organic conductors close to the superconducting phase
Comparing resistivity data of quasi-one dimensional superconductors (TMTSF)_2PF_6 and (TMTSF)_2ClO_4 along the least conducting c*-axis and along the high conductivity a -axis as a function of temperature and pressure, a low temperature regime is observed in which a unique scattering time governs transport along both d...
1105.3323v2
2011-11-29
Towards the Realization of Higher Connectivity in MgB2 Conductors: In-situ or Sintered Ex-situ?
The two most common types of MgB2 conductor fabrication technique - in-situ and ex-situ - show increasing conflicts concerning the connectivity, an effective current-carrying cross-sectional area. An in-situ reaction yields a strong intergrain coupling with a low packing factor, while an ex-situ process using pre-react...
1111.6767v2
2012-07-25
Metallic state in La-doped YBa$_2$Cu$_3$O$_y$ thin films with $n$-type charge carriers
We report hole and electron doping in La-doped YBa$_2$Cu$_3$O$_y$(YBCO) thin films synthesized by pulsed laser deposition technique and subsequent \emph{in-situ} postannealing in oxygen ambient and vaccum. The $n$-type samples show a metallic behavior below the Mott limit and a high carrier density of $\sim2.8$ $\times...
1207.5914v1
2012-11-28
Photoconductivity effects in mixed-phase BSCCO whiskers
We report on combined photoconductivity and annealing experiments in whisker-like crystals of the Bi-Sr-Ca-Cu-O (BSCCO) high-Tc superconductor. Both single-phase Bi2Sr2CaCu2O8+\delta (Bi-2212) samples and crystals of the mixed phases Bi2Sr2Ca2Cu3O10+x (Bi-2223)/Bi-2212 have been subjected to annealing treatments at 90{...
1211.6594v1
2013-01-03
Studies of YBa2Cu3O6+x degradation and surface conductivity properties by Scanning Spreading Resistance Microscopy
Local surface conductivity properties and surface degradation of c-axis oriented YBa2Cu3O6+x (YBCO) thin films were studied by Scanning Spreading Resistance Microscopy (SSRM). For the surface degradation studies, the YBCO surface was cleaned by ion beam etching and the SSRM surface conductivity map has been subsequentl...
1301.0397v1
2013-02-21
Electronic transport on carbon nanotube networks: a multiscale computational approach
Carbon nanotube networks are one of the candidate materials to function as malleable, transparent, conducting films, with the technologically promising application of being used as flexible electronic displays. Nanotubes disorderly distributed in a film offers many possible paths for charge carriers to travel across th...
1302.5379v1
2013-12-05
Giant topological Hall effect in strained Fe$_{0.7}$Co$_{0.3}$Si epilayers
The coupling of electron spin to real-space magnetic textures leads to a variety of interesting magnetotransport effects. The skyrmionic spin textures often found in chiral B20-lattice magnets give rise, via real-space Berry phases, to the topological Hall effect, but it is typically rather small. Here, B20-ordered Fe$...
1312.1722v1
2013-12-23
Signatures of electronic phase separation in the Hall effect of anisotropically strained La0.67Ca0.33MnO3 films
Systematic transport measurements have been performed on a series of La0.67Ca0.33MnO3 (LCMO) thin films with varying degrees of anisotropic strain. The strain is induced via epitaxial growth on NdGaO3(001) substrates and varied by controlling the thermal annealing time. An antiferromagnetic insulating (AFI) state, poss...
1312.6670v1
2014-04-16
Origin of High Temperature Oxidation Resistance of Ti-Al-Ta-N Coatings
Alloying Ti-Al-N coatings with Ta has proven to enhance their hardness, thermal stability, and oxidation resistance. However, especially for arc-evaporated Ti-Al-Ta-N coatings only limited information on the detailed influence of the elements on various properties is available. Therefore, we have developed arc-evaporat...
1404.4345v1
2014-12-02
Effect of phase separation induced supercooling on magnetotransport properties of epitaxial La5/8-yPryCa3/8MnO3 (y~0.4) thin film
Thin films of La5/8-yPryCa3/8MnO3 (y~0.4) have been grown on single crystal SrTiO3 (001) by RF sputtering. The structural and surface characterizations confirm the epitaxial nature of these film. However, the difference between the rocking curve of the (002) and (110) peaks and the presence of pits/holes in the step-te...
1412.0862v1
2016-11-09
Unusual non saturating Giant Magneto-resistance in single crystalline Bi2Te3 topological insulator
We report synthesis, structural details and electrical transport properties of topological insulator Bi2Te3. The single crystalline specimens of Bi2Te3 are obtained from high temperature (950C) melt and slow cooling (2C/hour). The resultant crystals were shiny, one piece (few cm) and of bright silver color. The Bi2Te3 ...
1611.02859v2
2016-11-28
Grand Design Spiral Arms in A Young Forming Circumstellar Disk
We study formation and long-term evolution of a circumstellar disk in a collapsing molecular cloud core using a resistive magnetohydrodynamic simulation. While the formed circumstellar disk is initially small, it grows as accretion continues and its radius becomes as large as 200 AUs toward the end of the Class-I phase...
1611.09361v2
2017-09-27
Pressure induced spin crossover in disordered α-LiFeO2
Structural, magnetic and electrical-transport properties of {\alpha}-LiFeO2, crystallizing in the rock salt structure with random distribution of Li and Fe ions, have been studied by synchrotron X-ray diffraction, 57Fe M\"ossbauer spectroscopy and electrical resistance measurements at pressures up to 100 GPa using diam...
1709.09680v1
2018-03-24
Ion implantation in nanodiamonds: size effect and energy dependence
Nanoparticles are ubiquitous in nature and are increasingly important for technology. They are subject to bombardment by ionizing radiation in a diverse range of environments. In particular, nanodiamonds represent a variety of nanoparticles of significant fundamental and applied interest. Here we present a combined exp...
1803.09081v1
2020-09-14
Memristive control of mutual SHNO synchronization for neuromorphic computing
Synchronization of large spin Hall nano-oscillators (SHNO) arrays is an appealing approach toward ultra-fast non-conventional computing based on nanoscale coupled oscillator networks. However, for large arrays, interfacing to the network, tuning its individual oscillators, their coupling, and providing built-in memory ...
2009.06594v1
2022-02-09
Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor
In disordered transition-metal dichalcogenide (TMD) superconductor, both the strong spin-orbit coupling (SOC) and disorder show remarkable effects on superconductivity. However, the features of SOC and disorder were rarely detected directly. Here we report the quantum transport behaviors arising from the interplay of S...
2202.04338v1
2016-03-21
Measurement of Characteristic Impedance of Silicon Fiber Sheet based readout strips panel for RPC detector in INO
The India based Neutrino Observatory (INO) is a mega science project of India, which is going to use near about 30, 000 Resistive Plate Chambers (RPC) as active detector elements for the study of atmospheric neutrino oscillations. Each RPC detector will consist of two orthogonally placed readout strips panel for pickin...
1603.06334v1
2017-04-18
Extruded Mg based hybrid composite alloys studied by longitudinal impression creep
The creep behaviour of a creep-resistant AE42 magnesium alloy reinforced with Saffil short fibres and SiC particulates in various combinations has been examined in the longitudinal direction, i.e., the plane containing random fibre orientation was parallel to the loading direction, in the temperature range of 175-300 C...
1704.06563v2
2018-08-12
High-pressure polymorphism of BaFe2Se3
BaFe2Se3 is a potential superconductor material exhibiting transition at 11 K and ambient pressure. Here we extended the structural and performed electrical resistivity measurements on this compound up to 51 GPa and 20 GPa, respectively, in order to distinguish if the superconductivity in this sample is intrinsic to th...
1808.03952v1
2019-03-14
Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices
We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temp...
1903.06050v1
2015-06-26
Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis
Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures consisting of a few atomic layers thick hBN film sandwiched between graphene nanoribb...
1506.08207v1
2015-07-02
Massive $2$-form field and holographic ferromagnetic phase transition
In this paper, we investigate in some detail the holographic ferromagnetic phase transition in an AdS${_4}$ black brane background by introducing a massive 2-form field coupled to the Maxwell field strength in the bulk. In the two probe limits, one is to neglect the back reaction of the 2-form field to the background g...
1507.00546v2
2018-12-31
Growth, Characterization and High Field Magneto-Conductivity of Co0.1Bi2Se3 Topological Insulator
We report the crystal growth as well as transport properties of Co added Bi2Se3 single crystals. The values of the lattice parameters a and b for Co added sample were observed to increase as compared to the pure Bi2Se3. The Raman spectroscopy displayed higher Raman shift of corresponding vibrational modes for Co0.1Bi2S...
1812.11713v1
2019-11-28
Low-friction, wear-resistant, and electrically homogeneous multilayer graphene grown by chemical vapor deposition on molybdenum
Chemical vapour deposition (CVD) is a promising method for producing large-scale graphene (Gr). Nevertheless, microscopic inhomogeneity of Gr grown on traditional metal substrates such as copper or nickel results in a spatial variation of Gr properties due to long wrinkles formed when the metal substrate shrinks during...
1911.12653v1
2021-02-23
Strain-tuning of nematicity and superconductivity in single crystals of FeSe
Strain is a powerful experimental tool to explore new electronic states and understand unconventional superconductivity. Here, we investigate the effect of uniaxial strain on the nematic and superconducting phase of single crystal FeSe using magnetotransport measurements. We find that the resistivity response to the st...
2102.11984v1
2021-02-24
Calibration of manganin pressure gauge for diamond-anvil cells
Pressure calibration for most diamond-anvil cell (DAC) experiments is mainly based on the ruby scale, which is key to implement this powerful tool for high-pressure study. However, the ruby scale can often hardly be used for programmably-controlled DAC devices, especially the piezoelectric-driving cells, where a contin...
2102.12125v1
2021-03-19
A Robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events
Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si3N4 based metal/substrate assembly is the key to produce majority phase ...
2103.10751v2
2021-07-22
Temperature dependence of on-state inter-terminal capacitances (Cgd and Cgs) of SiC MOSFETs and frequency limitations of their measurements
Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of power SiC MOSFETs. Knowledge of the exact values for the ITCs is required in order to perform accurate and predictive compact model simulations of their dynamic performance. Since commercial SiC MOSFETs are capable of operating in a w...
2107.10408v1
2021-07-24
Anomalous Nernst thermopower and giant magnetostriction in microwave synthesized La0.5Sr0.5CoO3
Ferromagnetic metallic oxides have potential applications in spincaloric devices which utilize the spin property of charge carriers for interconversion of heat and electricity through the spin Seebeck or the anomalous Nernst effect or both. In this work, we synthesized polycrystalline La0.5S0.5CoO3 by microwave irradia...
2107.11535v1
2022-01-15
Fabrication and micro-Raman spectroscopy of arrays of copper phthalocyanine molecular-magnet microdisks
Phthalocyanines as organic semiconductors and molecular magnets provide plenty of industrial or high-tech applications from dyes and pigments up to gas sensors, molecular electronics, spintronics and quantum computing. Copper phthalocyanine (CuPc) belongs among the most used phthalocyanines, typically in the form of po...
2201.08235v1
2022-07-06
Mechanism of the Resistivity Switching Induced by the Joule Heating in Crystalline NbO$_2$
Recently the memristive electrical transport properties in NbO$_2$ have attracted much attention for their promising application to the neuromorphic computation. At the center of debates is whether the metal-to-insulator transition (MIT) originates from the structural distortion (Peierls) or the electron correlation (M...
2207.02682v2
2022-12-13
Deep multilevel wet etching of fused silica glass microstructures in BOE solution
Fused silica glass is a material of choice for micromechanical, microfluidic, and optical devices due to its ultimate chemical resistance, optical, electrical, and mechanical performance. Wet etching in hydrofluoric solutions especially a buffered oxide etching (BOE) solution is still the key method for fabricating fus...
2212.06699v1
2023-03-02
Evolution of complex magnetic phases and metal-insulator transition through Nb substitution in La$_{0.5}$Sr$_{0.5}$Co$_{1-x}$Nb$_x$O$_3$
We report the evolution of structural, magnetic, transport, and electronic properties of bulk polycrystalline La$_{0.5}$Sr$_{0.5}$Co$_{1-x}$Nb$_x$O$_3$ ($x =$ 0.025--0.25) samples. The Rietveld refinement of the x-ray diffraction patterns with R$\bar3$c space group reveals that the lattice parameters and rhombohedral d...
2303.01108v1
2023-10-18
Electrically-driven amplification of terahertz acoustic waves in graphene
In graphene devices, the electronic drift velocity can easily exceed the speed of sound in the material at moderate current biases. Under this condition, the electronic system can efficiently amplify acoustic phonons, leading to the exponential growth of sound waves in the direction of the carrier flow. Here, we demons...
2310.12225v1
2024-04-24
Structural investigation of the quasi-one-dimensional topological insulator Bi$_4$I$_4$
The bismuth-halide Bi$_4$I$_4$ undergoes a structural transition around $T_P\sim 300$K, which separates a high-temperature $\beta$ phase ($T>T_P$) from a low-temperature $\alpha$ phase ($T<T_P$). $\alpha$ and $\beta$ phases are suggested to host electronic band structures with distinct topological classifications. Rapi...
2404.16194v1
1998-12-22
Theory of Colossal Magnetoresistance in Doped Manganites
The exchange interaction of polaronic carriers with localized spins leads to a ferromagnetic/paramagnetic transition in doped charge-transfer insulators with strong electron-phonon coupling. The relative strength of the exchange and electron-phonon interactions determines whether the transition is first or second order...
9812355v1
1999-02-22
Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study
The Hall effect in LuNi_2B_2C and YNi_2B_2C borocarbides has been investigated in normal and superconducting mixed states. The Hall resistivity rho_{xy} for both compounds is negative in the normal as well as in the mixed state and has no sign reversal below T_c typical for high-T_c superconductors. In the mixed state ...
9902299v1
2000-07-21
Effect of γ-irradiation on superconductivity in polycrystalline YBa_{2}Cu_{3}O_{7-δ}
A bulk polycrystalline sample of YBa_{2}Cu_{3}O_{7-\delta} (\delta \approx 0.1) has been irradiated by \gamma-rays with ^{60}Co source. Non-monotonic behavior of T_c (defined as the temperature at which normal resistance is halved) with increasing irradiation dose \Phi (up to about 220 MR) is observed: T_c decreases at...
0007345v1
2004-08-13
The effect of oxygen stoichiometry on electrical transport and magnetic properties of La0.9Te0.1MnOy
The effect of the variation of oxygen content on structural, magnetic and transport properties in the electron-doped manganites La0.9Te0.1MnOy has been investigated. All samples show a rhombohedral structure with the space group . The Curie temperature decreases and the paramagnetic-ferromagnetic (PM-FM) transition bec...
0408302v1
2007-09-14
Crystallography, magnetic susceptibility, heat capacity, and electrical resistivity of heavy fermion LiV$_2$O$_4$ single crystals grown using a self-flux technique
Magnetically pure spinel compound ${\rm LiV_2O_4}$ is a rare $d$-electron heavy fermion. Measurements on single crystals are needed to clarify the mechanism for the heavy fermion behavior in the pure material. In addition, it is known that small concentrations ($< 1$ mol%) of magnetic defects in the structure strongly ...
0709.2387v3
2009-08-26
On the strong impact of doping in the triangular antiferromagnet CuCrO2
Electronic band structure calculations using the augmented spherical wave method have been performed for CuCrO2. For this antiferromagnetic (T_N = 24 K) semiconductor crystallizing in the delafossite structure, it is found that the valence band maximum is mainly due to the t_2g orbitals of Cr^3+ and that spin polarizat...
0908.3828v1
2009-12-02
Magnetotransport of La0.70ca0.3-xsrxmno3 (Ag): A Potential Room Temperature Bolometer and Magnetic Sensor
Here we report the optimized magneto-transport properties of polycrystalline La0.70Ca0.3-xSrxMnO3 and their composites with Ag. The optimization was carried out by varying the Sr and Ag contents simultaneously to achieve large temperature coefficient of resistance (TCR) as well as low field magneto-resistance (MR) at r...
0912.0347v2
2012-08-16
Gate tunable quantum transport in double layer graphene
We analyze the effect of screening provided by the additional graphene layer in double layer graphene heterostructures (DLGs) on transport characteristics of DLG devices in the metallic regime. The effect of gate-tunable charge density in the additional layer is two-fold: it provides screening of the long-range potenti...
1208.3470v2
2012-10-20
Tunable spin reorientation transition and magnetocaloric effect in Sm0.7-xLaxSr0.3MnO3 series
We report electrical resistivity, magnetic and magnetocaloric properties in Sm0.7-xLaxSr0.3MnO3 series for x= 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.65, and 0.7. All the compounds show second order paramagnetic to ferromagnetic transition at T = Tc which is tunable anywhere between 83 K and 373 K with a proper choice of th...
1210.5595v1
2012-11-27
Anisotropic Impurity-States, Quasiparticle Scattering and Nematic Transport in Underdoped Ca(Fe1-xCox)2As2
Iron-based high temperature superconductivity develops when the `parent' antiferromagnetic/orthorhombic phase is suppressed, typically by introduction of dopant atoms. But their impact on atomic-scale electronic structure, while in theory quite complex, is unknown experimentally. What is known is that a strong transpor...
1211.6454v1
2013-05-16
Different routes to pressure-induced volume collapse transitions in gadolinium and terbium metals
The sudden decrease in molar volume exhibited by most lanthanides under high pressure is often attributed to changes in the degree of localization of their 4f-electrons. We give evidence, based on electrical resistivity measurements of dilute Y(Gd) and Y(Tb) alloys to 120 GPa, that the volume collapse transitions in Gd...
1305.3852v4
2014-04-09
Quantum transport evidence for a three-dimensional Dirac semimetal phase in Cd3As2
The material termed three-dimensional (3D) Dirac semimetal has attracted great interests recently, since it is an electronic analogue to two-dimensional graphene. Starting from this novel phase, various topologically distinct phases may be obtained, such as topological insulator, Weyl semimetal, quantum spin Hall insul...
1404.2557v3
2014-04-15
Formation of a topological non-Fermi liquid in MnSi
Fermi liquid theory provides a remarkably powerful framework for the description of the conduction electrons in metals and their ordering phenomena, such as superconductivity, ferromagnetism, and spin- and charge-density-wave order. A different class of ordering phenomena of great interest concerns spin configurations ...
1404.4050v1
2014-09-12
Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator
A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport signatures predicted for such topological surface states (TSS) is a well-defined h...
1409.3778v2
2014-12-23
Magnetic and structural transitions in La$_{0.4}$Na$_{0.6}$Fe$_2$As$_2$ single crystals
La$_{0.4}$Na$_{0.6}$Fe$_2$As$_2$ single crystals have been grown out of an NaAs flux in an alumina crucible and characterized by measuring magnetic susceptibility, electrical resistivity, specific heat, as well as single crystal x-ray and neutron diffraction. La$_{0.4}$Na$_{0.6}$Fe$_2$As$_2$ single crystals show a stru...
1412.7447v1
2015-01-08
Structure and bonding in amorphous iron carbide thin films
We investigate the amorphous structure, chemical bonding, and electrical properties of magnetron sputtered Fe1-xCx (0.21<x<0.72) thin films. X-ray, electron diffraction and transmission electron microscopy show that the Fe1-xCx films are amorphous nanocomposites, consisting of a two-phase domain structure with Fe-rich ...
1501.01839v1
2015-09-09
Controlling the Electrical Properties of Undoped and Ta-doped TiO2 Polycrystalline Films via Ultra-Fast Annealing Treatments
We present a study on the crystallization process of undoped and Ta doped TiO2 amorphous thin films. In particular, the effect of ultra-fast annealing treatments in environments characterized by different oxygen concentrations is investigated via in-situ resistance measurements. The accurate examination of the key para...
1509.02744v1
2016-10-14
rHARM: Accretion and Ejection in Resistive GR-MHD
Turbulent magnetic diffusivity plays an important role for accretion disks and the launching of disk winds. We have implemented magnetic diffusivity, respective resistivity in the general relativistic MHD code HARM. This paper describes the theoretical background of our implementation, its numerical realization, our nu...
1610.04445v1
2016-10-26
Doping of Ga in antiferromagnetic semiconductor alpha-Cr2O3oxide and its effects on modified magnetic and electronic properties
The samples of Ga doped Cr2O3 oxide have been prepared using chemical co-precipitation route. X-ray diffraction pattern and Raman spectra have confirmed rhombohedral crystal structure with space group R3-C. Magnetic measurement has indicated the dilution of antiferromagnetic (AFM) spin order in Ga doped alpha-Cr2O3 sys...
1610.08426v1
2018-02-21
Multi-Terminal Memtransistors from Polycrystalline Monolayer MoS2
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory, memristors have higher endurance, multi-bit data storage, and faster read/write times. ...
1802.07783v1
2019-02-20
Effect of the temperature and magnetic field induced martensitic transformation in bulk Fe$_{45}$Mn$_{26}$Ga$_{29}$ alloy on its electronic structure and physical properties
Effect of the temperature and magnetic field induced martensitic transformation (MT) on the electronic structure and some physical properties of bulk Fe$_{45.2}$Mn$_{25.9}$Ga$_{28.9}$ Heusler alloy has been investigated. {According to the experimental results of DSC, magnetic and transport measurements direct and rever...
1902.07462v1
2020-02-04
Single-defect Memristor in MoS$_2$ Atomic-layer
Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and reconfigurable systems. Recently, the unexpected discovery of memristor effect in at...
2002.01574v1
2020-04-07
Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions
Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-...
2004.03284v1
2020-09-16
High Field Magneto-Transport of Mixed Topological Insulators Bi2Se3-xTex (x = 0, 1, 2 & 3)
The article comprises structural, microstructural, and physical properties analysis of Bi2Se3-xTex (x= 0, 1, 2 and 3) mixed topological insulator (MTI) single crystals. All the crystals were grown through a well-optimized solid-state reaction route via the self-flux method. These MTI are well characterized through XRD ...
2009.07757v1
2016-03-05
Development and characterization of single gap glass RPC
India-based Neutrino Observatory (INO) facility is going to have a 50 kton magnetized Iron CALorimeter (ICAL) detector for precision measurements of neutrino oscillations using atmospheric neutrinos. The proposed ICAL detector will be a stack of magnetized iron plates (acting as target material) interleaved with glass ...
1603.01719v5
2017-08-08
High Surface Conductivity of Fermi Arc Electrons in Weyl semimetals
Weyl semimetals (WSMs), a new type of topological condensed matter, are currently attracting great interest due to their unusual electronic states and intriguing transport properties such as chiral anomaly induced negative magnetoresistance, a semi--quantized anomalous Hall effect and the debated chiral magnetic effect...
1708.02415v1
2019-08-21
Half-metallic ferromagnetism and Ru-induced localization in quaternary Heusler alloy CoRuMnSi
We report a combined theoretical and experimental investigation of half-metallic ferromagnetism in equiatomic quaternary Heusler alloy CoRuMnSi. Room temperature XRD analysis reveals that the alloy crystallizes in L21 disorder instead of pristine Y-type structure due to 50% swap disorder between the tetrahedral sites, ...
1908.07804v1
2012-03-10
How local is the Phantom Force?
The phantom force is an apparently repulsive force, which can dominate the atomic contrast of an AFM image when a tunneling current is present. We described this effect with a simple resistive model, in which the tunneling current causes a voltage drop at the sample area underneath the probe tip. Because tunneling is a...
1203.2258v1