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2015-08-28
Does a dissolution-precipitation mechanism explain concrete creep in moist environments?
Long-term creep (i.e., deformation under sustained load) is a significant material response that needs to be accounted for in concrete structural design. However, the nature and origin of creep remains poorly understood, and controversial. Here, we propose that concrete creep at RH (relative humidity) > 50%, but fixed ...
1508.07082v1
2015-09-11
High thermoelectric performance and low thermal conductivity of densified LaOBiSSe
In this study, we examined the thermoelectric properties of the layered bismuth-chalcogenide-based (BiCh2-based) compound LaOBiSSe, which is expected to be a new candidate material for thermoelectric applications. Densified samples were obtained with a hot-press method. The results of the X-ray diffraction measurements...
1509.03387v1
2016-04-22
Thermoelectric Properties of Antiperovskite Calcium Oxides Ca3PbO and Ca3SnO
We report the thermoelectric properties of polycrystalline samples of Ca3Pb1-xBixO (x = 0, 0.1, 0.2) and Ca3SnO, both crystallizing in a cubic antiperovskite-type structure. The Ca3SnO sample shows metallic resistivity and its thermoelectric power approaches 100 uV K-1 at room temperature, resulting in the thermoelectr...
1604.06541v2
2016-04-26
A Sinusoidally-Architected Helicoidal Biocomposite
A fibrous herringbone-modified helicoidal architecture is identified within the exocuticle of an impact-resistant crustacean appendage. This previously unreported composite microstructure, which features highly textured apatite mineral templated by an alpha-chitin matrix, provides enhanced stress redistribution and ene...
1604.07798v2
2016-05-04
Atomically Thin Boron Nitride: Unique Properties and Applications
Atomically thin boron nitride (BN) is an important two-dimensional (2D) nanomaterial, with many properties distinct from graphene. In this feature article, these unique properties and associated applications often not possible from graphene are outlined. The article starts with characterization and identification of at...
1605.01136v1
2016-05-06
Superconducting gap structure of FeSe
The microscopic mechanism governing the zero-resistance flow of current in some iron-based, high-temperature superconducting materials is not well understood up to now. A central issue concerning the investigation of these materials is their superconducting gap symmetry and structure. Here we present a combined study o...
1605.01908v2
2016-05-24
Pressure-Induced Confined Metal from the Mott Insulator Sr3Ir2O7
The spin-orbit Mott insulator Sr3Ir2O7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high pressure electric resistance and resonant inelastic x ray scattering measurements on single crystal Sr3Ir2O7 up to 63 65...
1605.07582v1
2016-11-08
Valley Hall Effect and Nonlocal Transport in Strained Graphene
Graphene subject to high levels of shear strain leads to strong pseudo-magnetic fields resulting in the emergence of Landau levels. Here we show that, with modest levels of strain, graphene can also sustain a classical valley hall effect (VHE) that can be detected in nonlocal transport measurements. We provide a theory...
1611.02382v2
2016-11-11
Microfluidization of graphite and formulation of graphene-based conductive inks
We report the exfoliation of graphite in aqueous solutions under high shear rate [$\sim10^8s^{-1}$] turbulent flow conditions, with a 100\% exfoliation yield. The material is stabilized without centrifugation at concentrations up to 100 g/L using carboxymethylcellulose sodium salt to formulate conductive printable inks...
1611.04467v1
2016-12-26
Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)
Since last few years, research based on topological insulators (TI) is in great interests due to intrinsic exotic fundamental properties and future potential applications such as quantum computers or spintronics. The fabrication of TI nanodevices and study on their transport properties mostly focused on high quality cr...
1612.08353v1
2017-09-26
SnAs-based layered superconductor NaSn2As2
Superconductivity with exotic properties has often been discovered in materials with a layered (two-dimensional) crystal structure. The low dimensionality affects the electronic structure of materials, which could realize a high transition temperature (Tc) and/or unconventional pairing mechanisms. Here, we report the s...
1709.08899v2
2017-11-10
Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2
Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar...
1711.03671v2
2017-11-15
Revisiting the electron-doped SmFeAsO: enhanced superconductivity up to 58.6 K by Th and F codoping
In the iron-based high-Tc bulk superconductors, Tc above 50K was only observed in the electron-doped 1111-type compounds. Here we revisit the electron-doped SmFeAsO polycrystals to make a further investigation for the highest T-c in these materials. To introduce more electron carriers and less crystal lattice distortio...
1711.05440v1
2018-01-19
Observation of Meissner effect in potassium-doped \emph{p}-quinquephenyl}
The chain-like organic compounds with conjugated structure have the potential to become high temperature superconductors. We examine this idea by choosing p-quinquephenyl with five phenyl rings connected in para position. The dc magnetic susceptibility measurements provide solid evidence for the presence of Meissner ef...
1801.06324v2
2018-01-19
Pressure-induced superconductivity in palladium sulfide
An extended study on PdS is carried out with the measurements of the resistivity, Hall coefficient, Raman scattering, and X-ray diffraction at high pressures up to 42.3 GPa. With increasing pressure, superconductivity is observed accompanying with a structural phase transition at around 19.5 GPa. The coexistence of sem...
1801.06330v1
2018-02-07
Structure, magnetic and transport properties of epitaxial thin films of equiatomic CoFeMnGe quaternary Heusler alloy
Future spintronics requires the realization of thin film of half-metallic ferromagnets having high Curie temperature and 100\% spin polarization at the Fermi level for potential spintronics applications. In this paper, we report the epitaxial thin films growth of half-metallic CoFeMnGe Heusler alloy on MgO (001) substr...
1802.02413v1
2018-03-12
Sub 20 meV Schottky barriers in metal/MoTe2 junctions
The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of particular interest. While their band gaps are compatible with those of conventional...
1803.04164v1
2018-04-09
Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films
Dislocations, one-dimensional lattice imperfections, are common to technologically important materials such as III-V semiconductors, and adversely affect heat dissipation in e.g., nitride-based high-power electronic devices. For decades, conventional models based on nonlinear elasticity theory have predicted this therm...
1804.02825v1
2018-05-01
Strongly correlated proton-doped perovskite nickelate memory devices
We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam lithography is observed. The state switching speed reported here are ...
1805.00527v1
2018-06-21
Strange metallicity in the doped Hubbard model
Strange or bad metallic transport, defined by its incompatibility with conventional quasiparticle pictures, is a theme common to strongly correlated materials and ubiquitous in many high temperature superconductors. The Hubbard model represents a minimal starting point for modeling strongly correlated systems. Here we ...
1806.08346v2
2018-09-13
Superconductivity in LaPd2Bi2 with CaBe2Ge2-type structure
Here we report the synthesis and superconductivity of a novel ternary compound LaPd2Bi2. Shiny plate-like single crystals of LaPd2Bi2 were first synthesized by high-temperature solution method with PdBi flux. X-ray diffraction analysis indicates that LaPd2Bi2 belongs to the primitive tetragonal CaBe2Ge2-type structure ...
1809.04811v1
2019-05-08
Miniature Multi-Level Optical Memristive Switch Using Phase Change Material
The optical memristive switches are electrically activated optical switches that can memorize the current state. They can be used as optical latching switches in which the switching state is changed only by applying an electrical Write/Erase pulse and maintained without external power supply. We demonstrate an optical ...
1905.03163v1
2020-03-02
Structural and Magnetic Properties of Molecular Beam Epitaxy Grown Chromium Selenide Thin Films
Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in scanning tunneling microscopy indicate a flat smooth film growth along the c-ax...
2003.01199v1
2017-03-01
Chemical and Lattice Stability of the Tin Sulfides
The tin sulfides represent a materials platform for earth-abundant semiconductor technologies. We present a first-principles study of the five known and proposed phases of SnS together with SnS2 and Sn2S3. Lattice-dynamics techniques are used to evaluate the dynamical stability and temperature-dependent thermodynamic f...
1703.00361v2
2017-03-11
Sign reversal of magnetoresistance and p to n transition in Ni doped ZnO thin film
We report the magnetoresistance and nonlinear Hall effect studies over a wide temperature range in pulsed laser deposited Ni0.07Zn0.93O thin film. Negative and positive contributions to magnetoresistance at high and low temperatures have been successfully modeled by the localized magnetic moment and two band conduction...
1703.03942v1
2018-10-01
Quantum transport in a compensated semimetal W2As3 with nontrivial Z2 indices
We report a topological semimetal W2As3 with a space group C2/m. Based on the first-principles calculations, band crossings are partially gapped when spin-orbit coupling is included. The Z2 indices at the electron filling are [1;111], characterizing a strong topological insulator and topological surface states. From th...
1810.00665v1
2019-07-05
Giant enhancement of Piezo-resistance in ballistic graphene due to transverse electric fields
We investigate the longitudinal and transverse piezoresistance effect in suspended graphene in the ballistic regime. Utilizing parametrized tight binding Hamiltonian from ab initio calculations along with Landauer quantum transport formalism, we devise a methodology to evaluate the piezoresistance effect in 2D material...
1907.02896v1
2020-04-23
Experimental evidence of monolayer AlB$_2$ with symmetry-protected Dirac cones
Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. ...
2004.10916v1
2020-09-13
Extreme softness of brain matter in simple shear
We show that porcine brain matter can be modelled accurately as a very soft rubber-like material using the Mooney-Rivlin strain energy function, up to strains as high as 60\%. This result followed from simple shear experiments performed on small rectangular fresh samples ($2.5$ cm$^3$ and $1.1$ cm$^3$) at quasi-static ...
2009.06102v1
2020-09-29
Dimensional Crossover Tuned by Pressure in Layered Magnetic NiPS3
Layered magnetic transition-metal thiophosphate NiPS3 has unique two-dimensional (2D) magnetic properties and electronic behavior. The electronic band structure and corresponding magnetic state are expected to sensitive to the interlayer interaction, which can be tuned by external pressure. Here, we report an insulator...
2009.14051v1
2022-02-23
The honeycomb and hyperhoneycomb polymorphs of IrI$_3$
The synthesis of IrI$_3$ at high pressure in its layered honeycomb polymorph is reported. Its crystal structure is refined by single crystal X-ray diffraction. Faults in the honeycomb layer stacking are observed by single crystal diffraction, synchrotron powder diffraction, and transmission electron microscopy. A previ...
2202.11658v1
2014-01-10
Ferroelectric-like SrTiO3 surface dipoles probed by graphene
The electrical transport properties of graphene are greatly influenced by its environment. Owing to its high dielectric constant, strontium titanate (STO) is expected to suppress the long-range charged impurity scattering and consequently to enhance the mobility. However, the absence of such enhancement has caused some...
1401.2222v1
2017-05-01
Large Thermoelectric Power Factor at Low Temperatures in One-Dimensional Telluride Ta4SiTe4
We report the discovery of a very large thermoelectric power over -400 microV K-1 in the whisker crystals of a one-dimensional telluride Ta4SiTe4, while maintaining a low electrical resistivity of rho = 2 mohm cm, yielding a very large power factor of P = 80 microW cm-1 K-2 at an optimum temperature of 130 K. This temp...
1705.00404v1
2017-08-25
Spin torque control of antiferromagnetic moments in NiO
For a long time, there have been no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was also difficult to detect the orientation of the magnetic moments since the net m...
1708.07682v1
2019-03-13
Hydrodynamic Phonon Transport: Past, Present, and Prospect
The hydrodynamic phonon transport was studied several decades ago for verifying the quantum theory of lattice thermal transport. Recent prediction of significant hydrodynamic phonon transport in graphitic materials shows its practical importance for high thermal conductivity materials and brought a renewed attention. A...
1903.05731v1
2019-04-12
Synthesis of anti-perovskite-type carbides and nitrides from metal oxides and melamine
Four anti-perovskite-type compounds, ZnNNi3, ZnCNi3, SnNCo3, and SnCCo3, are synthesised through reactions between ingredient metal oxides and organic compound melamine (C3H6N6). ZnNNi3 and ZnCNi3 are selectively synthesised by choosing different reaction temperatures and nominal oxide-to-melamine ratios. SnNCo3 is syn...
1904.06103v1
2019-12-23
Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN Growth
An HVPE reactor for the growth of bulk GaN crystals with a diameter of 50 mm was developed. Growth rate non-uniformity of 1% was achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically-resistant refractory materials were used instead of quartz in the reactor hot zone. High-capacity e...
1912.11010v1
2012-03-27
Shadow evaporation of epitaxial Al/Al2O3/Al tunnel junctions on sapphire utilizing an inorganic bilayer mask
This letter describes a new inorganic shadow mask that has been employed for the evaporation of all-epitaxial Al/Al2O3/Al superconducting tunnel junctions. Organic resists that are commonly used for shadow masks and other lift-off processes are not compatible with ultra-high vacuum deposition systems, and they can brea...
1203.6007v1
2012-06-14
Conduction in jammed systems of tetrahedra
Control of transport processes in composite microstructures is critical to the development of high performance functional materials for a variety of energy storage applications. The fundamental process of conduction and its control through the manipulation of granular composite attributes (e.g., grain shape) are the su...
1206.2990v1
2016-09-06
Effect of morphology and defectiveness of graphene-related materials on the electrical and thermal conductivity of their polymer nanocomposites
In this work, electrically and thermally conductive poly (butylene terephthalate) nanocomposites were prepared by in-situ ring-opening polymerization of cyclic butylene terephthalate (CBT) in presence of a tin-based catalyst. One type of graphite nanoplatelets (GNP) and two different grades of reduced graphene oxide (r...
1609.01581v2
2016-09-22
Crystal structure and low-energy Einstein mode in ErV$_2$Al$_{20}$ intermetallic cage compound
Single crystals of a new ternary aluminide ErV$_2$Al$_{20}$ were grown using a self-flux method. The crystal structure was determined by powder X-ray diffraction measurements and Rietveld refinement, and physical properties were studied by means of electrical resistivity, magnetic susceptibility and specific heat measu...
1609.07161v1
2020-05-11
Crystal Structure and Thermoelectric Transport Properties of As-Doped Layered Pnictogen Oxyselenides NdO0.8F0.2Sb1-xAsxSe2
We report the synthesis and thermoelectric transport properties of As-doped layered pnictogen oxyselenides NdO0.8F0.2Sb1-xAsxSe2 (x < 0.7), which are predicted to show high-performance thermoelectric properties based on first-principles calculation. The crystal structure of these compounds belongs to the tetragonal P4/...
2005.04836v1
2020-05-17
Paramagnetic resonance in La2NiMnO6 probed by impedance and lock-in detection techniques
We report the detection of paramagnetic resonance in the double perovskite La2NiMnO6 at room temperature for microwave magnetic fields with frequencies, f = 1 GHz to 5 GHz, using two cavity-less methods. We use an indirect impedance method which makes use of a radio frequency impedance analyzer and a folded copper stri...
2005.08142v1
2020-05-19
Molecular beam epitaxy growth of nonmagnetic Weyl semimetal LaAlGe thin film
Here, we report a detailed method of growing LaAlGe, a non-magnetic Weyl semimetal, thin film on silicon(100) substrates by molecular beam epitaxy and their structural and electrical characterizations. 50 nm thick LaAlGe films were deposited and annealed for 16 hours in situ at a temperature 793 K. As-grown high-qualit...
2005.09695v1
2020-07-13
One nanometer HfO$_2$-based ferroelectric tunnel junctions on silicon
In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new resistive switching memory which exploit polarization-dependent tunnel current acro...
2007.06182v1
2020-08-03
Energy gap tuning and gate-controlled topological phase transition in InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells
We report transport measurements of strained InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap through structural parameters and an external electric field. For highly strained CQWs with $x = 0.4$, we obtain a gap of 35 meV, an order of ma...
2008.00664v1
2020-08-15
Microwave AC voltage induced phase change in Sb$_2$Te$_3$ nanowires
Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration o...
2008.06666v1
2020-10-23
Observation of photoelectric nonvolatile memory and oscillations in VO2 at room temperature
Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room temperature, and nonvolatile memory has required non-ambient surroundings (e.g., e...
2010.12531v1
2020-11-17
Effect of Surface Treatment on High-Temperature Oxidation Behavior of IN 713C
The effects of surface preparations on oxidation kinetics and oxide scale morphology for the commercially available Ni-based superalloy IN 713C have been investigated. The ground and polished samples were exposed in air at 800-1100C. The ground specimens were found to demonstrate lower oxidation kinetics compared to th...
2011.08910v1
2021-02-01
Resistive transition of hydrogen-rich superconductors
Critical temperature, $T_c$, and the transition width, $\Delta$$T_c$, are two primary parameters of the superconducting transition. The latter parameter reflects the superconducting state disturbance originating from the thermodynamic fluctuations, atomic disorder, applied magnetic field, the presence of secondary crys...
2102.00946v3
2021-02-10
Evidence of damage in carbon fibre composite tiles joined to a metallic heat sink under high heat flux fatigue
The two years experience with Active Metal Casting flat bonds shows that this technology is suitable for the heat fluxes expected in Tore Supra (10 MW/m${}^2$). Tests were pursued up to 3330 cycles, with elements still functional. At higher heat fluxes, fatigue damage is observed, but the bond resists remarkably well w...
2102.05316v1
2021-03-14
Electron-beam Floating-zone Refined UCoGe
The interplay between unconventional superconductivity and quantum critical ferromagnetism in the U-Ge compounds represents an open problem in strongly correlated electron systems. Sample quality can have a strong influence on both of these ordered states in the compound UCoGe, as is true for most unconventional superc...
2103.08000v1
2021-03-24
Large Nernst effect and field enhanced transversal ZT in ZrTe5
Thermoelectric materials can recover electrical energy from waste heat and vice versa, which are of great significance in green energy harvesting and solid state refrigerator. The thermoelectric figure of merit (zT) quantifies the energy conversion efficiency, and a large Seebeck or Nernst effect is crucial for the dev...
2103.13069v1
2021-03-26
Large Microwave Inductance of Granular Boron-Doped Diamond Superconducting Films
Boron-doped diamond granular thin films are known to exhibit superconductivity with an optimal critical temperature of Tc = 7.2K. Here we report the measured complex surface impedance of Boron-doped diamond films in the microwave frequency range using a resonant technique. Experimentally measured inductance values are ...
2103.14738v3
2021-06-25
An estimate for thermal diffusivity in highly irradiated tungsten using Molecular Dynamics simulation
The changing thermal conductivity of an irradiated material is among the principal design considerations for any nuclear reactor, but at present few models are capable of predicting these changes starting from an arbitrary atomistic model. Here we present a simple model for computing the thermal diffusivity of tungsten...
2106.13666v2
2021-07-15
Microstructure manipulation by laser-surface remelting of a full-Heusler compound to enhance thermoelectric properties
There is an increasing reckoning that the thermoelectric performance of a material is dependent on its microstructure. However, the microstructure-properties relationship often remains elusive, in part due to the complexity of the hierarchy and scales of features that influence transport properties. Here, we focus on t...
2107.07327v1
2021-07-29
Breakdown of the topological protection by cavity vacuum fields in the integer quantum Hall effect
The control of the electronic properties of materials via the vacuum fields of cavity electromagnetic resonators is one of the emerging frontiers of condensed matter physics. We show here that the enhancement of vacuum field fluctuations in subwavelength split-ring resonators dramatically affects arguably one of the mo...
2107.14145v1
2021-09-03
Quantum anomalous Hall edge channels survive up to the Curie temperature
Achieving metrological precision of quantum anomalous Hall resistance quantization at zero magnetic field so far remains limited to temperatures of the order of 20 mK, while the Curie temperature in the involved material is as high as 20 K. The reason for this discrepancy remains one of the biggest open questions surro...
2109.01463v1
2021-11-03
Insulator-to-superconductor transition in quasi-one-dimensional HfS3 under pressure
Various transition metal trichalcogenides (TMTC) show the charge-density-wave and superconductivity, which provide an ideal platform to study the correlation between these two orderings and the mechanism of superconductivity. Currently, almost all metallic TMTC compounds can show superconductivity either at ambient pre...
2111.02060v1
2021-11-16
Ultrathin ferrimagnetic GdFeCo films with very low damping
Ferromagnetic materials dominate as the magnetically active element in spintronic devices, but come with drawbacks such as large stray fields, and low operational frequencies. Compensated ferrimagnets provide an alternative as they combine the ultrafast magnetization dynamics of antiferromagnets with a ferromagnet-like...
2111.08768v1
2021-12-06
Sliding Ferroelectric Tunnel Junctions
Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN) and its novel sliding inversion mechanism was reported experimentally (Science 2021, 372, 1458; 2021, 372, 1462), which paves a new way to realize van der Waals (vdW) ferroelectric devices with new functionalities. Here, we dev...
2112.02886v1
2022-06-06
Enhancement of superconductivity on the verge of a structural instability in isovalently doped $β$-ThRh$_{1-x}$Ir$_{x}$Ge
$\beta$-ThRhGe, the high-temperature polymorph of ThRhGe, is isostructural to the well-known ferromagnetic superconductor URhGe. However, contrary to URhGe, $\beta$-ThRhGe is nonmagnetic and undergoes an incomplete structural phase transition at 244 K, followed by a superconducting transition below 3.36 K. Here we show...
2206.02364v1
2022-06-21
HR-EBSD analysis of in situ stable crack growth at the micron scale
Understanding the local fracture resistance of microstructural features. such as brittle inclusions, coatings, and interfaces at the microscale under complex loading conditions is critical for microstructure-informed design of materials. In this study, a novel approach has been formulated to decompose the J-integral ev...
2206.10243v2
2022-10-01
Surface modulation of metal-organic frameworks for on-demand photochromism in the solid state
Organic photoswitchable molecules have struggled in solid state form to fulfill their remarkable potential, in terms of photoswitching performance and long-term stability when compared to their inorganic counterparts. We report the concept of non-electron deficient host's surface with optimal porosity and hydrophobicit...
2210.00241v1
2022-10-06
Fracture behavior of MOF monoliths revealed by nanoindentation and nanoscratch
Monolithic metal-organic frameworks (MOFs) represent a promising solution for the industrial implementation of this emerging class of multifunctional materials, due to their structural stability. When compared to MOF powders, monoliths exhibit other intriguing properties like hierarchical porosity, that significantly i...
2210.03219v1
2022-10-26
Thermoelectric properties in semimetals with inelastic electron-hole scattering
We present systematic theoretical results on thermoelectric effects in semimetals based on the variational method of the linearized Boltzmann equation. Inelastic electron-hole scattering is known to play an important role in the unusual transport of semimetals, including the broad $T^2$ temperature dependence of the el...
2210.14825v2
2023-01-10
Depolarization Induced III-V Triatomic Layers with Tristable Polarization States
The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few silicon-compatible ferroelectrics suitable for device downscaling. We demonstrate with ...
2301.03876v1
2023-01-11
Direct imaging of local atomic structures in zeolite using novel low-dose scanning transmission electron microscopy
Zeolites have been used in industrial applications such as catalysts, ion exchangers, and molecular sieves because of their unique porous atomic structures. However, the direct observation of zeolitic local atomic structures via electron microscopy is difficult owing to their low resistance to electron irradiation. Sub...
2301.04377v1
2023-04-25
Simulations of Magnetization Reversal in FM/AFM Bilayers With THz Frequency Pulses
It is widely known that antiferromagnets (AFMs) display a high frequency response in the terahertz (THz) range, which opens up the possibility for ultrafast control of their magnetization for next generation data storage and processing applications. However, because the magnetization of the different sublattices cancel...
2304.12969v1
2023-05-24
A new class of carbon stabilized austenitic steels resistant to hydrogen embrittlement
High strength steels are susceptible to H-induced failure, which is typically caused by the presence of diffusible H in the microstructure. The diffusivity of H in austenitic steels with fcc crystal structure is slow. The austenitic steels are hence preferred for applications in the hydrogen-containing atmospheres. How...
2305.15290v3
2023-06-17
Pseudogap behavior in charge density wave kagome material ScV$_6$Sn$_6$ revealed by magnetotransport measurements
Over the last few years, significant attention has been devoted to studying the kagome materials AV$_3$Sb$_5$ (A = K, Rb, Cs) due to their unconventional superconductivity and charge density wave (CDW) ordering. Recently ScV$_6$Sn$_6$ was found to host a CDW below $\approx$90K, and, like AV$_3$Sb$_5$, it contains a kag...
2306.10230v1
2023-07-12
Monolithic Selenium/Silicon Tandem Solar Cells
Selenium is experiencing renewed interest as a promising candidate for the wide bandgap photoabsorber in tandem solar cells. However, despite the potential of selenium-based tandems to surpass the theoretical efficiency limit of single junction devices, such a device has never been demonstrated. In this study, we prese...
2307.05996v1
2023-10-09
Colossal c-axis response and lack of rotational symmetry breaking within the kagome plane of the CsV$_3$Sb$_5$ superconductor
The kagome materials AV4$_3$Sb$_5$ (A = K, Rb, Cs) host an intriguing interplay between unconventional superconductivity and charge-density-waves. Here, we investigate CsV$_3$Sb$_5$ by combining high-resolution thermal-expansion, heat-capacity and electrical resistance under strain measurements. We directly unveil that...
2310.06102v1
2023-10-15
Parabolic Vector Focus Wave Modes
Weber-type parabolic beams have a transverse intensity profile, which is parabolically-shaped and can be flexibly controlled. On the other hand, this type of beams belongs to the family of the so-called nondiffracting beams and have properties, promising for applications where the shape of the beam is of an importance....
2310.09896v1
2023-11-09
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated to enable new, fundamental discoveries in condensed matter physics and lead to ...
2311.05752v1
2023-11-26
Quantum oscillations in kagome metals (Ti, Zr, Hf)V6Sn6 at Van Hove filling
Kagome materials have recently drawn great attention due to the interplay between nontrivial band topology, electron correlations, and Van Hove singularities related many-body orders. Here we report three new vanadium-based kagome metals, TiV6Sn6, ZrV6Sn6, and HfV6Sn6, and conduct a comprehensive investigation of their...
2311.15239v2
2023-12-14
Long-Range Structural Order in a Hidden Phase of Ruddlesden-Popper Bilayer Nickelate La$_3$Ni$_2$O$_7$
The recent discovery of superconductivity in Ruddlesden-Popper bilayer nickelate, specifically La$_3$Ni$_2$O$_7$, has generated significant interest in the exploration of high-temperature superconductivity within this material family. In this study, we present the crystallographic and electrical resistivity properties ...
2312.09200v2
2024-03-11
Active Control of Bound States in the Continuum in Toroidal Metasurfaces
The remarkable properties of toroidal metasurfaces, featuring ultrahigh-Q bound states in the continuum (BIC) resonances and nonradiating anapole modes, have garnered significant attention. The active manipulation of toroidal resonance characteristics offers substantial potential for advancing tunable metasurfaces. Our...
2403.06345v1
2024-04-11
Hydrogen Trapping and Embrittlement in Metals -- A Review
Hydrogen embrittlement in metals (HE) is a serious challenge for the use of high strength materials in engineering practice and a major barrier to the use of hydrogen for global decarbonization. Here we describe the factors and variables that determine HE susceptibility and provide an overview of the latest understandi...
2404.07736v1
1999-07-23
Unconventional one-magnon scattering resistivity in half metals
Low-temperature resistivity of half-metals is investigated. To date it has been discussed that the one-magnon scattering process in half-metals is irrelevant for low-temperature resistivity, due to the fully spin-polarized electronic structure at the ground state. If one takes into account the non-rigid-band behavior o...
9907363v2
2002-05-27
Superconductivity of epsilon-Fe: complete resistive transition
Last year, iron was reported to become superconducting at temperatures below 2K and pressures between 15 and 30 GPa. The evidence presented was a weak resistivity drop, suppressed by a magnetic field above 0.2 T, and a small Meissner signal. However, a compelling demonstration, such as the occurrence of zero resistance...
0205557v1
2002-06-08
Diffusion theory of spin injection through resistive contacts
Insertion of a resistive contact between a ferromagnetic metal and a semiconductor microstructure is of critical importance for achieving efficient spin injection into a semiconductor. However, the equations of the diffusion theory are rather cumbersome for the junctions including such contacts. A technique based on de...
0206129v2
2002-08-13
Resistance of multilayers with long length scale interfacial roughness
The resistance of multilayers with interface roughness on a length scale which is large compared to the atomic spacing is computed in several cases via the Boltzmann equation. This type of roughness is common in magnetic multilayers. When the electronic mean free paths are small compared to the layer thicknesses, the c...
0208251v1
2004-02-13
Superconducting Properties under Magnetic Field in Na$_{0.35}$CoO$_{2}{\cdot}1.3$H$_{2}$O Single Crystal
We report the in-plane resistivity and magnetic susceptibility of the layered cobalt oxide Na$_{0.35}$CoO$_{2}{\cdot}1.3$H$_{2}$O single crystal. The temperature dependence of the resistivity shows metallic behavior from room temperature to the superconducting transition temperature $T_{c}$ of 4.5 K. Sharp resistive tr...
0402355v1
2004-03-22
Electrical Transport Across an Individual Magnetic Domain Wall in (Ga,Mn)As Microdevices
Recent studies demonstrate that an individual magnetic domain wall (DW) can be trapped and reproducibly positioned within multiterminal (Ga,Mn)As microdevices. The electrical resistance obtained from such measurements is found to be measurably altered by the presence of this single entity. To elucidate these observatio...
0403547v1
2004-07-30
Occurrence of Hysteresis like behavior of resistance of $Sb_2 Te_3$ film in heating-cooling cycle
Experimental observations of a peculiar behavior observed on heating and cooling ${\rm Sb_2Te_3}$ films at different heating and cooling rate are detailed. The film regained its original resistance, forming a closed loop, on the completion of the heating-cooling cycle which was reproducible for identical conditions of ...
0407796v1
2004-08-03
Non-Gaussian Resistance Fluctuations in Disordered Materials
We study the distribution of resistance fluctuations of conducting thin films with different levels of internal disorder. The film is modeled as a resistor network in a steady state determined by the competition between two biased processes, breaking and recovery of the elementary resistors. The fluctuations of the fil...
0408057v1
2007-02-26
Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution
Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3, NiO, and CoO. The sandwic...
0702564v1
2007-11-02
Effects of Ferromagnetic Magnetic Ordering and Phase Transition on the Resistivity of Spin Current
It has been shown experimentally a long time ago that the magnetic ordering causes an anomalous behavior of the electron resistivity in ferromagnetic crystals. Phenomenological explanations based on the interaction between itinerant electron spins and lattice spins have been suggested to explain these observations. We ...
0711.0298v1
2008-01-29
Temperature Dependence of the Spin Resistivity in Ferromagnetic Thin Films
The magnetic phase transition is experimentally known to give rise to an anomalous temperature-dependence of the electron resistivity in ferromagnetic crystals. Phenomenological theories based on the interaction between itinerant electron spins and lattice spins have been suggested to explain these observations. In thi...
0801.4444v1
2008-02-19
Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers
The longitudinal and transverse resistivities of differently strained (Ga,Mn)As layers are theoretically and experimentally studied as a function of the magnetization orientation. The strain in the series of (Ga,Mn)As layers is gradually varied from compressive to tensile using (In,Ga)As templates with different In con...
0802.2635v1
2008-07-28
Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down to 4.4 ohm micrometer squared. If a large current is applied, a reversible resis...
0807.4422v1
2009-05-15
First-principles analysis of spin-disorder resistivity of Fe and Ni
Spin-disorder resistivity of Fe and Ni and its temperature dependence are analyzed using noncollinear density functional calculations within the supercell method. Different models of thermal spin disorder are considered, including the mean-field approximation and the nearest-neighbor Heisenberg model. Spin-disorder res...
0905.2606v1
2009-06-04
Resistivity of Graphene Nanoribbon Interconnects
Graphene nanoribbon interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given line-width (18nm<W<52nm) is about 3X that of a Cu wire, whereas the best GNR has a resistivity comparable to that of Cu. The conductivity is found to be limited ...
0906.0924v1
2009-08-17
Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory
We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors. Well-developed unipolar switching behaviors in amorphous LaLuO3 make it suited for not only logic but memory applica...
0908.2379v2
2010-05-21
Highly anisotropic resistivities in the double-exchange model for strained manganites
The highly anisotropic resistivities in strained manganites are theoretically studied using the two-orbital double-exchange model. At the nanoscale, the anisotropic double-exchange and Jahn-Teller distortions are found to be responsible for the robust anisotropic resistivities observed here via Monte Carlo simulations....
1005.3865v1
2010-06-28
Random barrier double-well model for resistive switching in tunnel barriers
The resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the conductance of the barrier and leads to the resistive switching effects. A double-we...
1006.5329v2
2010-12-08
Measuring sheet resistance of CIGS solar cell's window layer by spatially resolved electroluminescence imaging
A spatially resolved electroluminescence (EL) imaging experiment is developed to measure the local sheet resistance of the window layer, directly on the completed CIGS cell. Our method can be applied to the EL imaging studies that are made in fundamental studies as well as in in-line process inspection (1-3). The EL ex...
1012.1693v1
2011-02-11
Pressure cycle of superconducting Cs0.8Fe2Se2: a transport study
We report measurements of the temperature and pressure dependence of the electrical resistivity of single crystalline iron-based chalcogenide Cs0.8Fe2Se2. In this material superconductivity Tc~30K develops from a normal state with extremely large resistivity. At ambient pressure a large "hump" in the resistivity is obs...
1102.2464v2
2011-12-06
Tunable resistivity of individual magnetic domain walls
Despite the relevance of current-induced magnetic domain wall (DW) motion for new spintronics applications, the exact details of the current-domain wall interaction are not yet understood. A property intimately related to this interaction is the intrinsic DW resistivity. Here, we investigate experimentally how the resi...
1112.1239v1