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2020-09-04
Thermal conductivity of PbTe-CoSb3 bulk polycrystalline composite: the role of microstructure and interface thermal resistance
Systematic experimental and theoretical research on the role of microstructure and interface thermal resistance on the thermal conductivity of the PbTe-CoSb3 bulk polycrystalline composite is presented. In particular, the correlation between the particle size of the dispersed phase and interface thermal resistance (R_{int}) on the phonon thermal conductivity (\kappa_{ph}) is discussed. With this aim, a series of PbTe-CoSb_3 polycrystalline composite materials with the different particle sizes of CoSb_3 was prepared. The structural (XRD) and microstructural analysis (SEM/EDXS) confirmed assumed chemical and phase compositions. The acoustic impedance difference (\Delta Z) was determined from measured sound velocities in PbTe and CoSb_3 phases. The interface thermal resistance (R_{int}) was calculated using the Debye model and agrees with the experimental R_{int}. It is shown that the \kappa_{ph} of the composite may be reduced when the particle size of the dispersed phase (CoSb_3) is smaller than the critical value of ~230nm. This relationship was concluded to be crucial for controlling the heat transport phenomena in composite thermoelectric materials. The selection of the components with different elastic properties (acoustic impedance) and particle size smaller than the Kapitza radius leads to a new direction in the engineering of composite TE materials with designed thermal properties
2009.02190v2
2020-09-20
Development of a computational software in Python, used to study the materials resistance in beams
In this research, we do a software writing in Python to calculate the efforts, bending moments and deformations in beams of different materials. This computational tool, that we developed, is of great help in area of computational physical, more exactly in resistance of materials, which serves as support for researchers and teachers especially in physics and civil engineering, of the part of statics, who wish to carry out the modeling of the functions, involved in the calculation of resistance in beams in a practical and simple way, using the software presented in this article. In order to carry out this software, we are going to use the following methods: the double-integration method and the conjugate-beam method, which will serve as the basis of calculation to find the mathematical expressions involved in the analysis of resistance in beams, then we will perform the implementation of the aforementioned methods, using Python as the programming language. As a final step in this project, the graphical interface of said calculation tool will be made using the Python 3.0 Tkinter library. In this work, we show the results of the graphs of the stress profiles, bending moments and deformations, for the case of different types of beams, load and force distributions applied to them. Where we were also able to conclude that a calculation software was successfully built, dedicated to the analysis of efforts and deformations in beams made of different materials.
2009.09448v2
2022-07-01
High-throughput analysis of Fröhlich-type polaron models
The electronic structure of condensed matter can be significantly affected by the electron-phonon interaction, leading to important phenomena such as electrical resistance, superconductivity or the formation of polarons. This interaction is often neglected in band structure calculations but can have a strong impact on band gaps or optical spectra. Commonly used frameworks for electron-phonon energy corrections are the Allen-Heine-Cardona theory and the Fr\"ohlich model. While the latter shows qualitative agreement with experiment for many polar materials, its simplicity should bring hard limits to its applicability in real materials. Improvements can be made by introducing a generalized version of the model, which considers anisotropic and degenerate electronic bands, and multiple phonon branches. In this work, we search for trends and outliers on over a thousand materials in existing databases of phonon and electron band structures. We use our results to identify the limits of applicability of the standard Fr\"olich model by comparing to the generalized version, and by testing its basic hypothesis of a large radius for the polaronic wavefunction and the corresponding atomic displacement cloud. Among our extended set of materials, most exhibit large polaron behavior as well as validity of the perturbative treatment. For the valence band, there is also a significant fraction of the materials for which the perturbative treatment cannot be applied and/or for which the size of the self-trapping region is close to the atomic repetition distance. We find a large variety of behaviors, and employ much more accurate, fully ab initio Allen-Heine-Cardona calculations to understand extreme cases, where the Fr\"ohlich model should fail and unusually large zero-point renormalization energies occur.
2207.00364v1
2013-03-26
Molecular Memory with Atomically-Smooth Graphene Contacts
We report the use of bilayer graphene as an atomically-smooth contact for nanoscale devices. A two-terminal Bucky ball (C60) based molecular memory is fabricated with bilayer graphene as a contact on the polycrystalline nickel electrode. Graphene provides an atomically-smooth covering over an otherwise rough metal surface. The use of graphene additionally prohibits the electromigration of nickel atoms into the C60 layer. The devices exhibit a low-resistance state in the first sweep cycle and irreversibly switch to a high resistance state at 0.8-1.2 V bias. The reverse sweep has a hysteresis behavior as well. In the subsequent cycles, the devices retain the high-resistance state, thus making it write-once read-many memory (WORM). The ratio of current in low-resistance to high-resistance state is lying in 20-40 range for various devices with excellent retention characteristics. Control sample without the bilayer graphene shows random hysteresis and switching.
1303.6603v1
2020-04-10
Vortex Dynamics and Dissipation Under High-amplitude Microwave Drive
In this paper, we describe the vortex dynamics under high-amplitude microwave drive and its effect on the surface resistance of superconductors. The vortex surface resistance is calculated with a Montecarlo approach, where the vortex motion equation is solved for a collection of vortex flux lines each oscillating within a random pinning landscape. This approach is capable of providing a detailed description of the microscopic vortex dynamics and in turn important insights into the microwave field amplitude dependence of the vortex surface resistance. The numerical simulations are compared against experimental data of vortex surface resistance at high microwave amplitude measured by means of bulk niobium superconducting-radio frequency cavities operating at 1.3 GHz. The good qualitative agreement of simulations and experiments suggests that the non-linear dependence of the trapped flux surface resistance with the microwave field amplitude is generated by progressive microwave depinning and vortex jumps.
2004.05083v2
2015-07-17
Resistive thrust production can be as crucial as added mass mechanisms for inertial undulatory swimmers
In this paper, we address a crucial point regarding the description of moderate to high Reynolds numbers aquatic swimmers. For decades, swimming animals have been classified in two different families of propulsive mechanisms based on the Reynolds number: the "resistive" swimmers, using local friction to produce the necessary thrust force for locomotion at low Reynolds number and the "reactive" swimmers, lying in the high Reynolds range, and using added mass acceleration (described by perfect fluid theory). However, inertial swimmers are also systems that dissipate energy, due to their finite size, therefore involving strong resistive contributions, even for high Reynolds numbers. Using a complete model for the hydrodynamic forces, involving both reactive and resistive contributions, we revisit here the physical mechanisms responsible for the thrust production of such swimmers. We show, for instance, that the resistive part of the force balance is as crucial as added mass effects in the modeling of the thrust force, especially for elongated species. The conclusions brought by this work may have significant contributions to the understanding of complex swimming mechanisms, especially for the future design of artificial swimmers.
1507.04952v1
2022-07-13
Memristive and tunneling effects in 3D interconnected silver nanowires
Due to their memristive properties nanowire networks are very promising for neuromorphic computing applications. Indeed, the resistance of such systems can evolve with the input voltage or current as it confers a synaptic behaviour to the device. Here, we propose a network of silver nanowires (Ag-NWs) which are grown in a nanopourous membrane with interconnected nanopores by electrodeposition. This bottom-up approach fabrication method gives a conducting network with a 3D architecture and a high density of Ag-NWs. The resulting 3D interconnected Ag-NW network exhibits a high initial resistance as well as a memristive behavior. It is expected to arise from the creation and the destruction of conducting silver filaments inside the Ag-NW network. Moreover, after several cycles of measurement, the resistance of the network switches from a high resistance regime, in the GOhm range, with a tunnel conduction to a low resistance regime, in the kOhm range.
2207.06338v1
2011-05-06
Giant microwave photoresistivity in a high-mobility quantum Hall system
We report the observation of a remarkably strong microwave photoresistivity effect in a high-mobility two-dimensional electron system subject to a weak magnetic field and low temperature. The effect manifests itself as a giant microwave-induced resistivity peak which, in contrast to microwave-induced resistance oscillations, appears only near the second harmonic of the cyclotron resonance and only at sufficiently high microwave frequencies. Appearing in the regime linear in microwave intensity, the peak can be more than an order of magnitude stronger than the microwave-induced resistance oscillations and cannot be explained by existing theories.
1105.1390v1
2014-11-19
Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene
Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist residue or different adsorbed species during standard lithography processing alters graphene's intrinsic properties by uncontrolled doping and increased scattering which results in high and inconsistent contact resistance. Here we demonstrate a femto-second laser assisted direct patterning of graphene microstructures that enables us to study both intrinsic and extrinsic effects on the graphene-metal interface. We show that a clean graphene-metal interface is not sufficient to obtain contact resistance approaching the intrinsic limit set by the quantum resistance. We also demonstrated that unlike CVD graphene, edge state conduction (or end-contact) is not spontaneously formed by metal deposition in case of graphene grown on SiC(0001). We conclude that for epitaxial graphene, intentional end-contact formation is necessary to obtain contact resistance near the quantum contact resistance limit.
1411.5114v1
2023-11-08
An attention-based deep learning network for predicting Platinum resistance in ovarian cancer
Background: Ovarian cancer is among the three most frequent gynecologic cancers globally. High-grade serous ovarian cancer (HGSOC) is the most common and aggressive histological type. Guided treatment for HGSOC typically involves platinum-based combination chemotherapy, necessitating an assessment of whether the patient is platinum-resistant. The purpose of this study is to propose a deep learning-based method to determine whether a patient is platinum-resistant using multimodal positron emission tomography/computed tomography (PET/CT) images. Methods: 289 patients with HGSOC were included in this study. An end-to-end SE-SPP-DenseNet model was built by adding Squeeze-Excitation Block (SE Block) and Spatial Pyramid Pooling Layer (SPPLayer) to Dense Convolutional Network (DenseNet). Multimodal data from PET/CT images of the regions of interest (ROI) were used to predict platinum resistance in patients. Results: Through five-fold cross-validation, SE-SPP-DenseNet achieved a high accuracy rate and an area under the curve (AUC) in predicting platinum resistance in patients, which were 92.6% and 0.93, respectively. The importance of incorporating SE Block and SPPLayer into the deep learning model, and considering multimodal data was substantiated by carrying out ablation studies and experiments with single modality data. Conclusions: The obtained classification results indicate that our proposed deep learning framework performs better in predicting platinum resistance in patients, which can help gynecologists make better treatment decisions. Keywords: PET/CT, CNN, SE Block, SPP Layer, Platinum resistance, Ovarian cancer
2311.04769v1
2000-08-17
Development of Gold Contacted Flip-chip Detectors with IMARAD CZT
We present initial results from our evaluation of a gold-contacted pixellated detector using cadmium zinc telluride substrate produced by IMARAD Imaging Systems. The Horizontal Bridgman (HB) grown crystals from IMARAD have been shown to produce high resolution photopeaks, but they are also seen to have large leakage current. Our previous tests with IMARAD CZT showed that the use of indium anodes and gold cathode improved the resistivity compared to the standard indium-contacted detectors. We seek to test whether simple evaporated gold contacts alone could also reduce the leakage current and thus improve the spectral resolution, especially in the 10-100 keV energy range. We have fabricated several metal-semiconductor-metal (MSM) detectors with a 4x4 array of pixels on 10x10 mm substrates. Measurements of the detectors' leakage current, spectral response, and temperature sensitivity are presented and compared to IMARAD's ohmic contact detector and gold contact MSM detectors made of High Pressure Bridgman (HPB) material. Finally, we show preliminary results from a tiled flip-chip pixellated detector made using the IMARAD detectors.
0008275v1
1997-09-21
Microwave properties of $(Pr_xY_{1-x})Ba_2Cu_3O_{7-δ}$ : Influence of magnetic scattering
We report measurements of the surface impedance $Z_s=R_s+iX_s$ of $(Pr_xY_{1-x})Ba_2Cu_3O_{7-\delta}$, $(x=0,0.15,0.23,0.3,0.4,0.5)$. Increasing $Pr$ concentration leads to some striking results not observed in samples doped by non-magnetic constituents. The three principal features of the $R_s(T)$ data - multiple structure in the transition, a high residual resistance and, at high $Pr$ concentrations, an upturn of the low $T$ data, are all characteristic of the influence of magnetic scattering on superconductivity, and appear to be common to materials where magnetism and superconductivity coexist. The low $T$ behavior of $\lambda (T)$ appears to change from $T$ to $T^4$ at large $Pr$ doping, and provides evidence of the influence of magnetic pairbreaking of the $Pr$.
9709232v1
1997-12-08
High frequency magneto-electrodynamics of La_(1-x)Sr_xMnO3 single crystals
The radio frequency (RF) response of La1-xSrxMnO3 single crystals reveal a variety of features associated with the structural, electronic and magnetic properties of the system. The resonance technique operating at ~ 4 MHz employed in this study is sensitive to small changes in both the magnetic susceptibility and resistivity of the samples. Very sharp changes in frequency are observed at the ferromagnetic (FM) and structural phase transitions in both the metallic (x = 0.175) and insulating (0.125) crystals studied. In addition to the known transitions identified as FM and orthorhombic distortions, our experiments show rich structures which are not observed in conventional DC magnetization and transport experiments. Our results demonstrate that RF experiments are ideally suited to investigate the complex phase diagram in the manganites. The colossal frequency change that we observe at the FM transition in the La1-xSrxMnO3 crystals is indicative of the enormous potential for using these materials in high frequency switching applications.
9712093v1
1999-04-28
Structure and properties of a novel fulleride Sm6C60
A novel fulleride Sm6C60 has been synthesized using high temperature solid state reaction. The Rietveld refinement on high resolution synchrotron X-ray powder diffraction data shows that Sm6C60 is isostructural with body-centered cubic A6C60 (A=K, Ba). Raman spectrum of Sm6C60 is similar to that of Ba6C60, and the frequencies of two Ag modes in Sm6C60 are nearly the same as that of Ba6C60, suggesting that Sm is divalent and hybridization between C60 molecules and the Sm atom could exist in Sm6C60. Resistivity measurement shows a weak T-linear behavior above 180 K, the transport at low temperature is mainly dominated by granular-metal theory.
9904404v1
2000-04-10
Magnetotransport study of the charged stripes in high-T_c cuprates
We present a study of the in-plane and out-of-plane magnetoresistance (MR) in heavily-underdoped, antiferromagnetic YBa_{2}Cu_{3}O_{6+x}, which reveals a variety of striking features. The in-plane MR demonstrates a "d-wave"-like anisotropy upon rotating the magnetic field H within the ab plane. With decreasing temperature below 20-25 K, the system acquires memory: exposing a crystal to the magnetic field results in a persistent in-plane resistivity anisotropy. The overall features can be explained by assuming that the CuO_2 planes contain a developed array of stripes accommodating the doped holes, and that the MR is associated with the field-induced topological ordering of the stripes.
0004135v1
2000-07-11
Grain boundary effects on magnetotransport in bi-epitaxial films of La$_{0.7}$Sr$_{0.3}$MnO$_3$
The low field magnetotransport of La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) films grown on SrTiO$_3$ substrates has been investigated. A high qualtity LSMO film exhibits anisotropic magnetoresistance (AMR) and a peak in the magnetoresistance close to the Curie temperature of LSMO. Bi-epitaxial films prepared using a seed layer of MgO and a buffer layer of CeO$_2$ display a resistance dominated by grain boundaries. One film was prepared with seed and buffer layers intact, while a second sample was prepared as a 2D square array of grain boundaries. These films exhibit i) a low temperature tail in the low field magnetoresistance; ii) a magnetoconductance with a constant high field slope; and iii) a comparably large AMR effect. A model based on a two-step tunneling process, including spin-flip tunneling, is discussed and shown to be consistent with the experimental findings of the bi-epitaxial films.
0007194v1
2001-02-23
Temperature Dependence of Low-Lying Electronic Excitations of LaMnO_3
We report on the optical properties of undoped single crystal LaMnO_3, the parent compound of the colossal magneto-resistive manganites. Near-Normal incidence reflectance measurements are reported in the frequency range of 20-50,000 cm-1 and in the temperature range 10-300 K. The optical conductivity, s_1(w), is derived by performing a Kramers-Kronig analysis of the reflectance data. The far-infrared spectrum of s_1(w) displays the infrared active optical phonons. We observe a shift of several of the phonon to high frequencies as the temperature is lowered through the Neel temperature of the sample (T_N = 137 K). The high-frequency s_1(w) is characterized by the onset of absorption near 1.5 eV. This energy has been identified as the threshold for optical transitions across the Jahn-Teller split e_g levels. The spectral weight of this feature increases in the low-temperature state. This implies a transfer of spectral weight from the UV to the visible associated with the paramagnetic to antiferromagnetic state. We discuss the results in terms of the double exchange processes that affect the optical processes in this magnetic material.
0102437v1
2001-02-27
Anisotropic three-dimentional magnetic fluctuations in heavy fermion CeRhIn5
CeRhIn5 is a heavy fermion antiferromagnet that orders at 3.8 K. The observation of pressure-induced superconductivity in CeRhIn5 at a very high Tc of 2.1 K for heavy fermion materials has led to speculations regarding to its magnetic fluctuation spectrum. Using magnetic neutron scattering, we report anisotropic three-dimensional antiferromagnetic fluctuations with an energy scale of less than 1.7 meV for temperatures as high as 3Tc. In addition, the effect of the magnetic fluctuations on electrical resistivity is well described by the Born approximation.
0102503v1
2001-12-21
First order transition from ferromagnetism to antiferromagnetism in Ce(Fe$_{0.96}$Al$_{0.04}$)$_2$: a magnetotransport study
The magnetotransport behaviour is investigated in detail across the first order magnetic phase transition from ferromagnetic to antiferromagnetic state in polycrystalline Ce(Fe$_{0.96}$Al$_{0.04}$)$_2$ sample. The study clearly brings out various generic features associated with a first order transition, viz., hysteresis, phase coexistence, supercooling and superheating, presence and limits of the metastable regimes. These results of magnetotransport study exhibit and support all the interesting thermomagnetic history effects that were observed in our earlier dc-magnetisation study on the same sample. Most notable here is the initial (or virgin) resistivity vs. field curve lying outside the hysteretic "butterfly shaped" magnetoresistivity loops obtained on cyclying the magnetic field between high enough positive and negative strengths. These findings, bearing one-to-one similarity with the data obtained in their magnetic counterpart (i.e., dc-magnetisation), have been ascribed an origin due to the arresting of this first order transition kinetics at low temperature and high magnetic field.
0112408v1
2002-08-07
Transport critical current densities and n factors in mono- and multifilamentary MgB2/Fe tapes and wires using fine powders
Mono- and multifilamentary MgB2/Fe tapes and wires with high transport critical current densities have been prepared using the powder-in-tube (PIT) process. The fabrication details are described. The effect of powder grain sizes and recrystallization temperature on jc has been investigated. At 25K and 1 T, jc values close to 105 A/cm2 were measured, while jc of 106 A/cm2 were extrapolated for 4.2K/0T in our monofilamentary tape. MgB2/Fe tapes exhibit high exponential n factors for the resistive transition: n ~ 80 and 40 were found at 5 T and 7 T, respectively. The highest transport jc values obtained so far in MgB2/Fe wires with 7 filaments were 1.1 * 105 A/cm2 at 4.2 K and in a field of 2 T, which is still lower than for monofilamentary tapes. Improved deformation and recovering processing is expected to lead to higher jc values.
0208133v1
2004-02-20
Metal-insulator transition and glassy behavior in two-dimensional electron systems
Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility (low-disorder) samples. The glass transition is manifested by a sudden and dramatic slowing down of the electron dynamics, and by a very abrupt change to the sort of statistics characteristic of complicated multistate systems. In particular, the behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.
0402535v1
2004-04-21
Formation and Thermal Stability of sub-10 nm Carbon Templates on Si(100)
We report a lithographic process for creating high-resolution (<10 nm) carbon templates on Si(100). A scanning electron microscope, operating under low vacuum (10E-6 mbar), produces a carbon-containing deposit ("contamination resist") on the silicon surface via electron-stimulated dissociation of ambient hydrocarbons, water and other adsorbed molecules. Subsequent annealing at temperatures up to 1320 K in ultra-high vacuum removes SiO2 and other contaminants, with no observable change in dot shape. The annealed structures are compatible with subsequent growth of semiconductors and complex oxides. Carbon dots with diameter as low as 3.5 nm are obtained with a 200 us electron-beam exposure time.
0404505v1
2005-04-19
High temperature magnetic ordering in La2RuO5
Magnetic susceptibility, heat capacity and electrical resistivity measurements have been carried out on a new ruthenate, La2RuO5 (monoclinic, space group P21/c) which reveal that this compound is a magnetic semiconductor with a high magnetic ordering temperature of 170K. The entropy associated with the magnetic transition is 8.3 J/mole-K -close to that expected for the low spin (S=1) state of Ru4+ ions. The low temperatures specific heat coefficient g is found to be nearly zero consistent with the semiconducting nature of the compound. The magnetic ordering temperature of La2RuO5 is comparable to the highest known Curie temperature of another ruthenate, namely, metallic SrRuO3, and in both these compounds the nominal charge state of Ru is 4+.
0504489v1
2006-05-11
Multifilament YBa2Cu3O6+x -coated conductors with minimized coupling losses
We report an experimental approach to making multifilament coated conductors with low losses in applied time-varying magnetic field. Previously, the multifilament conductors obtained for that purpose by laser ablation suffered from high coupling losses. Here we report how this problem can be solved. When the substrate metal in the grooves segregating the filaments is exposed to oxygen, it forms high resistivity oxides that electrically insulate the stripes from each other and from the substrate. As the result, the coupling loss has become negligible over the entire range of tested parameters (magnetic field amplitudes B and frequencies f) available to us.
0605313v1
2006-06-17
The thermally activated motion of vortex bundles and the anomalous Hall effect in type-II conventional and high-Tc superconductors
The anomalous Hall effect in type-II conventional and high-Tc superconductors is investigated based on the proposed novel theory of the thermally activated motion of vortex bundles over a directional-dependent energy barrier. Our calculations demonstrate clearly that anomalous Hall effect is induced by the competition between the Magnus force and the random collective pinning force of the vortex bundle. The Hall as well as the longitudinal resistivity for constant temperature and constant applied magnetic field of type-II superconducting films and bulk materials are calculated. The reentry phenomenon is also investigated. All the results are in good agreement with the experiments.
0606464v2
1999-11-30
Analysis of trap spectra in LEC and epitaxial GaAs
Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI-GaAs and high resistivity epitaxial GaAs. The peculiarities of the TSC were analysed and shown to be related to the influence of crystal micro-inhomogeneities.
9911048v1
2006-08-25
The Effects of Preheating of a Fine Tungsten Wire and the Polarity of a High-Voltage Electrode on the Energy Characteristics of an Electrically Exploded Wire in Vacuum
Results obtained from experimental and numerical studies of tungsten wires electrical explosion in vacuum are presented. The experiments were performed both with and without preheating of the wires, using positive or negative polarity of a high-voltage electrode. Preheating is shown to increase energy deposition in the wire core due to a longer resistive heating stage. The effect was observed both in single wire and wire array experiments. The evolution of the phase state of the wire material during explosion was examined by means of one-dimensional numerical simulation using a semiempirical wide-range equation of state describing the properties of tungsten with allowance made for melting and vaporization.
0608251v1
2007-03-11
A low-noise ferrite magnetic shield
Ferrite materials provide magnetic shielding performance similar to commonly used high permeability metals but have lower intrinsic magnetic noise generated by thermal Johnson currents due to their high electrical resistivity. Measurements inside a ferrite shield with a spin-exchange relaxation-free atomic magnetometer reveal a noise level of 0.75 fT Hz^(-1/2), 25 times lower than what would be expected in a comparable mu-metal shield. The authors identify a 1/f component of the magnetic noise due to magnetization fluctuations and derive general relationships for the Johnson current noise and magnetization noise in cylindrical ferromagnetic shields in terms of their conductivity and complex magnetic permeability.
0703115v2
2007-08-14
The zero-energy state in graphene in a high magnetic field
The fate of the charge-neutral Dirac point in graphene in a high magnetic field $H$ has been investigated at low temperatures ($T\sim$ 0.3 K). In samples with small $V_0$ (the gate voltage needed to access the Dirac point), the resistance $R_0$ at the Dirac point diverges steeply with $H$, signalling a crossover to an insulating state in intense field. The approach to the insulating state is highly unusual. Despite the steep divergence in $R_0$, the profile of $R_0$ vs. $T$ in fixed $H$ saturates to a $T$-independent value below 2 K, consistent with charge carrying gapless excitations.
0708.1959v2
2008-03-25
Superconductivity at 43 K in Samarium-arsenide Oxides $SmFeAsO_{1-x}F_x$
Since the discovery of high-transition temperature ($T_c$) superconductivity in layered copper oxides, extensive efforts have been devoted to explore the higher $T_c$ superconductivity. However, the $T_c$ higher than 40 K can be obtained only in the copper oxide superconductors so far. The highest reported value of $T_c$ for non-copper-oxide bulk superconductivity is 39 K in $MgB_2$.\cite{jun} The $T_c$ of about 40 K is close to or above the theoretical value predicted from BCS theory.\cite{mcmillan} Therefore, it is very significant to search for non-copper oxide superconductor with the transition temperature higher than 40 K to understand the mechanism of high-$T_c$ superconductivity. Here we report the discovery of bulk superconductivity in samarium-arsenide oxides $SmFeAsO_{1-x}F_x$ with ZrCuAiAs type structure. Resistivity and magnetization measurements show strong evidences for transition temperature as high as 43 K. $SmFeAsO_{1-x}F_x$ is the first non-copper oxide superconductor with $T_c$ higher than 40 K. The $T_c$ higher than 40 K may be a strong argument to consider $SmFeAsO_{1-x}F_x$ as an unconventional superconductor.
0803.3603v2
2008-04-21
CeFePO: A Heavy Fermion Metal with Ferromagnetic Correlations
The ground state properties of CeFePO, a homologue of the new high temperature superconductors RFePnO(1-x)Fx, were studied by means of susceptibility, specific heat, resistivity, and NMR measurements on polycrystals. All the results demonstrate that this compound is a magnetically non-ordered heavy Fermion metal with a Kondo temperature TK~10K, a Sommerfeld coefficient gamma=700mJ/molK2 and a mass enhancement factor of the order of 200. The absence of a Fe-contribution to the effective moment at high temperatures indicates that the magnetism in CeFePO is completely dominated by the effect of Ce. Thus the strong electronic correlation effects originate from the Ce-4f electrons rather than from the Fe-3d electrons. An enhanced Sommerfeld-Wilson ratio R=5.5 as well as a Korringa product S0/T1TK2~0.065 well below 1 indicate the presence of ferromagnetic correlations. Therefore, CeFePO appears to be on the non-magnetic side of a ferromagnetic instability.
0804.3250v2
2008-07-05
Growth and characterization of A_{1-x}K_xFe_2As_2 (A = Ba, Sr) single crystals with x=0 - 0.4
Single crystals of A$_{1-x}$K$_x$Fe$_2$As$_2$ (A=Ba, Sr) with high quality have been grown successfully by FeAs self-flux method. The samples have sizes up to 4 mm with flat and shiny surfaces. The X-ray diffraction patterns suggest that they have high crystalline quality and c-axis orientation. The non-superconducting crystals show a spin-density-wave (SDW) instability at about 173 K and 135 K for Sr-based and Ba-based compound, respectively. After doping K as the hole dopant into the BaFe$_2$As$_2$ system, the SDW transition is smeared, and superconducting samples with the compound of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ (0 $< x \leqslant$ 0.4) are obtained. The superconductors characterized by AC susceptibility and resistivity measurements exhibit very sharp superconducting transition at about 36 K, 32 K, 27 K and 23 K for x= 0.40,0.28,0.25 and 0.23, respectively.
0807.0759v3
2008-08-18
A Ni-based Superconductor: the Heusler Compound ZrNi$_2$Ga
This work reports on the novel Heusler superconductor ZrNi2Ga. Compared to other nickel-based superconductors with Heusler structure, ZrNi2Ga exhibits a relatively high superconducting transition temperature of Tc=2.9 K and an upper critical field of 1.5 T. Electronic structure calculations show that this relatively high transition temperature is caused by a van Hove singularity, which leads to an enhanced density of states at the Fermi energy. The van Hove singularity originates from a higher order valence instability at the L-point in the electronic structure. The enhanced density of states at the Fermi level was confirmed by specific heat and susceptibility measurements. Although many Heusler compounds are ferromagnetic, our measurements of ZrNi2Ga indicate a paramagnetic state above Tc and could not reveal any traces of magnetic order down to temperatures of at least 0.35 K. We investigated in detail the superconducting state with specific heat, magnetization, and resistivity measurements. The resulting data show the typical behavior of a conventional, weakly coupled BCS (s-wave) superconductor.
0808.2356v1
2008-10-03
Small anisotropy, weak thermal fluctuations, and high field superconductivity in Co-doped iron pnictide Ba(Fe1-xCox)2As2
We performed high-field magnetotransport and magnetization measurements on a single crystal of the 122-phase iron pnictide Ba(Fe1-xCox)2As2. Unlike the HTS cuprates and 1111-phase oxypnictides, Ba(Fe1-xCox)2As2 showed practically no broadening of the resistive transitions under magnetic fields up to 45 T. The mass anisotropy gamma = Hc2ab/Hc2c deduced from the slopes of the upper critical field dHc2ab/dT = 4.9T/K and dHc2c/dT = 2.5T/K decreases from ~2 near Tc, to ~1.5 at lower temperatures. We observed the irreversibility field close to Hc2, and a rather unusual symmetric volume pinning force curve Fp(H) suggestive of strong pinning nano-structure.
0810.0699v2
2009-05-01
Highly segmented thin microstrip detector with data-driven fast readout
In September 2008 the Slim5 collaboration submitted a low material budget silicon demonstrator to test with 12 GeV/c protons, at the PS-T9 test-beam at CERN. Inside the reference telescope, two different detectors were placed as device under test (DUT). The first was a 4k-Pixel Matrix of Deep N Well MAPS, developed in a 130 nm CMOS Technology, providing digital sparsified readout. The other one was a high resistivity double sided silicon detector, with short strips at 45-degree angle to the detector's edge, read out by the FSSR2 chip. The FSSR2 is a 128 channel data-driven fast readout chip developed by Fermilab and INFN. In this paper we describe the main features of latter sensor, the striplet. The primary goal of the test was to measure the efficiency and the resolution of the striplets. The data-driven approach of the FSSR2 readout chips has been fully exploited by the DAQ system.
0905.0083v3
2009-10-08
Structural and transport properties of Sr2VO{3-delta}FeAs superconductors with different oxygen deficiencies
Sr2VO{3-delta}FeAs superconductors with different oxygen deficiencies have been successfully fabricated. It is found that the superconducting transition temperature drops down monotonically with the increase of oxygen deficiency. The diminishing of superconductivity is accompanied by the enhancement of residual resistivity, indicating an unraveled scattering effect induced by the oxygen deficiency. The highest superconducting transition temperature at about 40 K is achieved near the stoichiometrical sample Sr$_2$VO$_{3}$FeAs. Surprisingly, the X-ray photoelectron spectroscopy (XPS) shows that the vanadium has a "5+" valence state in the samples. The Hall effect measurements reveal that the density of charge carriers (electron-like here) varies qualitatively with the increase of oxygen deficiency. Magnetotransport measurements show that the superconducting transition changes from one-step-like shape at low fields to two-step-like one at high fields, indicating a high anisotropy.
0910.1537v2
2010-04-22
Optimizing Transistor Performance of Percolating Carbon Nanotube Networks
In percolating networks of mixed metallic and semiconducting CNTs, there is a tradeoff between high on-current (dense networks) and high on/off ratio (sparse networks in which the metallic CNT fraction is not percolating). Experiments on devices in a transistor configuration and Monte Carlo simulations were performed to determine the scaling behavior of device resistivity as a function of channel length (L) for CNT density p in the range 0.04 - 1.29 CNT/{\mu}m^2 in the on- and off-states. Optimized devices with field-effect mobility up to 50 cm^2/Vs at on/off ratio > 10^3 were obtained at W = 50 {\mu}m, L > 70 {\mu}m for p = 0.54 - 0.81 CNTs/{\mu}m^2.
1004.4009v1
2010-06-25
Spin and charge dynamics in [TbPc$_2$]$^0$ and [DyPc$_2$]$^0$ single molecule magnets
Magnetization, AC susceptibility and $\mu$SR measurements have been performed in neutral phthalocyaninato lanthanide ([LnPc$_2]^0$) single molecule magnets in order to determine the low-energy levels structure and to compare the low-frequency spin excitations probed by means of macroscopic techniques, such as AC susceptibility, with the ones explored by means of techniques of microscopic character, such as $\mu$SR. Both techniques show a high temperature thermally activated regime for the spin dynamics and a low temperature tunneling one. While in the activated regime the correlation times for the spin fluctuations estimated by AC susceptibility and $\mu$SR basically agree, clear discrepancies are found in the tunneling regime. In particular, $\mu$SR probes a faster dynamics with respect to AC susceptibility. It is argued that the tunneling dynamics probed by $\mu$SR involves fluctuations which do not yield a net change in the macroscopic magnetization probed by AC susceptibiliy. Finally resistivity measurements in [TbPc$_2]^0$ crystals show a high temperature nearly metallic behaviour and a low temperature activated behaviour.
1006.4919v1
2010-09-17
Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate
We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 $\times 10^{13}/cm^{2}$ are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Gr\"uneisen regime until 100 K (at 6.2 $\times10^{13}/cm^{2}$), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3 $\times10^{13}/cm^{2}$, whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically-enhanced scattering rate.
1009.3367v2
2010-10-28
Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires
We present electronic transport measurements of GaAs nanowires grown by catalyst-free metal-organic chemical vapor deposition. Despite the nanowires being doped with a relatively high concentration of substitutional impurities, we find them inordinately resistive. By measuring sufficiently high aspect-ratio nanowires individually in situ, we decouple the role of the contacts and show that this semi-insulating electrical behavior is the result of trap-mediated carrier transport. We observe Poole-Frenkel transport that crosses over to phonon-assisted tunneling at higher fields, with a tunneling time found to depend predominantly on fundamental physical constants as predicted by theory. By using in situ electron beam irradiation of individual nanowires we probe the nanowire electronic transport when free carriers are made available, thus revealing the nature of the contacts.
1010.6086v1
2010-11-23
NaIrO3 - A pentavalent post-perovskite
Sodium iridium(V) oxide, NaIrO3, was synthesized by a high pressure solid state method and recovered to ambient conditions. It is found to be isostructural with CaIrO3, the much-studied structural analogue of the high-pressure post-perovskite phase of MgSiO3. Among the oxide post-perovskites, NaIrO3 is the first example with a pentavalent cation. The structure consists of layers of corner- and edge-sharing IrO6 octahedra separated by layers of NaO8 bicapped trigonal prisms. NaIrO3 shows no magnetic ordering and resistivity measurements show non-metallic behavior. The crystal structure, electrical and magnetic properties are discussed and compared to known post-perovskites and pentavalent perovskite metal oxides.
1011.5125v2
2010-12-11
Transport Spin Polarization of High-Curie Temperature MnBi Films
We report on the study of the structural, magnetic and transport properties of highly textured MnBi films with the Curie temperature of 628K. In addition to detailed measurements of resistivity and magnetization, we measure transport spin polarization of MnBi by Andreev reflection spectroscopy and perform fully relativistic band structure calculations of MnBi. A spin polarization from 51\pm1 to 63\pm1% is observed, consistent with the calculations and with an observation of a large magnetoresistance in MnBi contacts. The band structure calculations indicate that, in spite of almost identical densities of states at the Fermi energy, the large disparity in the Fermi velocities leads to high transport spin polarization of MnBi. The correlation between the values of magnetization and spin polarization is discussed.
1012.2486v1
2011-10-06
High-Precision Tuning of State for Memristive Devices by Adaptable Variation-Tolerant Algorithm
Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision) within its dynamic range even in the presence of large variations in switching behavior. The high precision state is nonvolatile and the results are likely to be sustained for nanoscale memristive devices because of the inherent filamentary nature of the resistive switching. The proposed functionality of memristive devices is especially attractive for analog computing with low precision data. As one representative example we demonstrate hybrid circuitry consisting of CMOS summing amplifier and two memristive devices to perform analog multiply and accumulate computation, which is a typical bottleneck operation in information processing.
1110.1393v1
2011-10-19
Evaluating the robustness of top coatings comprising plasma-deposited fluorocarbons in electrowetting systems
Thin dielectric stacks comprising a main insulating layer and a hydrophobic top coating are commonly used in low voltage electrowetting systems. However, in most cases, thin dielectrics fail to endure persistent electrowetting testing at high voltages, namely beyond the saturation onset, as electrolysis indicates dielectric failure. Careful sample inspection via optical microscopy revealed possible local delamination of the top coating under high electric fields. Thus, improvement of the adhesion strength of the hydrophobic top coating to the main dielectric is attempted through a plasma-deposited fluorocarbon interlayer. Interestingly enough the proposed dielectric stack exhibited a) resistance to dielectric breakdown, b) higher contact angle modulation range, and c) electrowetting cycle reversibility. Appearance of electrolysis in the saturation regime is inhibited, suggesting the use of this hydrophobic dielectric stack for the design of more efficient electrowetting systems. The possible causes of the improved performance are investigated by nanoscratch characterization.
1110.4238v1
2011-10-21
P-T phase diagram of iron arsenide superconductor NdFeAsO0.88F0.12
NdFeAsO0.88F0.12 belongs to the recently discovered family of high-TC iron-based superconductors. The influence of high pressure on transport properties of this material has been studied. Contrary to La-based compounds, we did not observe a maximum in TC under pressure. Under compression, TC drops rapidly as a linear function of pressure with the slope k = -2.8 \pm 0.1 K / GPa. The extrapolated value of TC at zero pressure is about TC (0) = 51.7 \pm 0.4 K. At pressures higher than ~18.4 GPa, the superconducting state disappears at all measured temperatures. The resistance changes slope and shows a turn-up behavior, which may be related to the Kondo effect or a weak localization of two-dimensional carriers below ~45 K that is above TC and thus competing with the superconducting phase. The behavior of the sample is completely reversible at the decompression. On the bases of our experimental data, we propose a tentative P-T phase diagram of NdFeAsO0.88F0.12.
1110.4909v1
2011-11-20
Flame Synthesis of Graphene Films in Open Environments
Few-layer graphene (FLG) is grown on copper and nickel substrates at high rates using a novel flame synthesis method in open-atmosphere environments. Transmittance and resistance properties of the transferred films are similar to those grown by other methods, but the concentration of oxygen, as assessed by XPS, is actually less than that for CVD-grown graphene under near vacuum conditions. The method involves utilizing a multi-element inverse-diffusion-flame burner, where post-flame species and temperatures are radially-uniform upon deposition at a substrate. Advantages of the flame synthesis method are scalability for large-area surface coverage, increased growth rates, high purity and yield, continuous processing, and reduced costs due to efficient use of fuel as both heat source and reagent. Additionally, by adjusting local growth conditions, other carbon nanostructures (i.e. nanotubes) are readily synthesized.
1111.4699v1
2012-07-25
Conductivity crossover in nano-crystalline diamond films: Realization of a disordered superlattice-like structure
We present the electrical transport characteristics of a batch of nano-crystalline diamond films of varying nitrogen concentrations and explain the conduction mechanism by the disordered quasi-superlattice model applied to semiconductor heterostructures. Synthesized by the hot filament chemical vapour deposition technique, the degree of structural disorder in the films, confirmed from Raman spectroscopy, is found to be controllable, resulting in the transition of conduction mechanism from localized and activated to the metallic conduction regime. Hence through high field magneto-resistance measurements at low temperatures we firmly establish a conductivity crossover from hopping to 3D weak localization. The long electronic dephasing time and its weak temperature dependence suggest the possibility for diamond-based high-speed device applications.
1207.5916v1
2012-10-23
Impact of the various spin and orbital ordering processes on multiferroic properties of orthovanadate DyVO3
The orthovanadate DyVO3 crystal, known to exhibit multiple structural, spin and orbital ordering transitions, is presently investigated on the basis of magnetization, heat capacity, resistivity, dielectric and polarization measurements. Our main result is experimental evidence for the existence of multiferroicity below a high TC of 108 K over a wide temperature range including different spin-orbital ordered states. The onset of ferroelectricity is found to coincide with the antiferromagnetic C-type spin ordering transition taking place at 108 K, which indicates that DyVO3 belongs to type II multiferroics exhibiting a coupling between magnetism and ferroelectricity. Some anomalies detected on the temperature dependence of electric polarization are discussed with respect to the nature of the spin-orbital ordered states of the V sublattice and the degree of spin alignment in the Dy sublattice. The orthovanadates RVO3 (R = rare earth or Y) form an important new category for searching for high-TC multiferroics.
1210.6373v3
2013-04-04
Atomic Calligraphy: The Direct Writing of Nanoscale Structures using MEMS
We present a micro-electromechanical system (MEMS) based method for the resist free patterning of nano-structures. Using a focused ion beam (FIB) to customize larger MEMS machines, we fabricate apertures as small as 50 nm on plates that can be moved with nanometer precision over an area greater than 20x20 {\mu}m^2. Depositing thermally evaporated gold atoms though the apertures while moving the plate results in the deposition of nanoscale metal patterns. Adding a shutter only microns above the aperture, enables high speed control of not only where but also when atoms are deposited. Using a shutter, different sized apertures can be selectively opened and closed for nano-structure fabrication with features ranging from nano- to micrometers in scale. The ability to evaporate materials with high precision, and thereby fabricate circuits and structures in situ, enables new kinds of experiments based on the interactions of a small number of atoms and eventually even single atoms.
1304.1334v1
2013-04-04
Substrate-Independent Catalyst-Free Synthesis of High-Purity Bi2Se3 Nanostructures
We describe a catalyst-free vapor-solid synthesis of bismuth selenide (Bi2Se3) nanostructures at ambient pressure with hydrogen as a carrier gas. The nanostructures were synthesized on glass, silicon and mica substrates and the method yields a variety of nanostructures: nanowires, nanoribbons, nanoplatelets and nanoflakes. The materials analysis shows high chemical purity in all cases, without sacrificing the crystalline structure of Bi2Se3. Low-temperature measurements of the nanostructures indicate contributions from the surface states with a tunable carrier density. Samples synthesized on flexible mica substrates show no significant change in resistance upon bending, indicating robustness of as-grown Bi2Se3 nanostructures and their suitability for device applications.
1304.1388v1
2013-07-14
Voltage-triggered Ultra-fast Metal-insulator Transition in Vanadium Dioxide Switches
Electrically driven metal-insulator transition in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal (MIM) structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between electrically-driven ON/OFF current ratio and thermally-induced resistance change during metal-insulator transition. It is also found that sharp metal-insulator transition could be triggered by external voltage pulses within 2 ns at room temperature and the achieved ON/OFF ratio is greater than two orders of magnitude with good endurance.
1307.3774v1
2013-07-17
Dielectric Coatings for IACT Mirrors
Imaging Atmospheric Cherenkov Telescopes for very-high energy gamma-ray astronomy need mirror with high reflectance roughly in the wavelength between 300 and 550 nm. The current standard reflective layer of such mirrors is aluminum. Being permanently exposed to the environment they show a constant degradation over the years. New and improved dielectric coatings have been developed to enhance their resistance to environmental impact and to extend their possible lifetime. In addition, these customized coatings have an increased reflectance of over 95% and are designed to significantly lower the night-sky background contribution. The development of such coatings for mirrors with areas up to 2 m2 and low application temperatures to suite the composite materials used for the new mirror susbtrates of the Cherenkov Telescope Array (CTA) and the results of extensive durability tests are presented.
1307.4557v1
2013-08-14
Perspectives of Micro-Pattern Gaseous Detector Technologies for Future Physics Projects
A centenary after the invention of the basic principle of gas amplification, gaseous detectors - are still the first choice whenever the large area coverage with low material budget is required. Advances in photo-lithography and micro-processing techniques in the chip industry during the past two decades triggered a major transition in the field of gas detectors from wire structures to Micro-Pattern Gas Detector (MPGD) concepts, revolutionizing cell-size limitations for many gas detector applications. The high radiation resistance and excellent spatial and time resolution make them an invaluable tool to confront future detector challenges at the frontiers of research. The design of the new micro-pattern devices appears suitable for industrial production. In 2008, the RD51 collaboration at CERN has been established to further advance technological developments of MPGDs and associated electronic-readout systems, for applications in basic and applied research. This review provides an overview of the state-of-the-art of the MPGD technologies and summarizes recent activities for the next generation of colliders within the framework of the RD51 collaboration.
1308.3047v2
2013-08-18
Pulsed Laser Deposition of High-Quality Thin Films of the Insulating Ferromagnet EuS
High-quality thin films of the ferromagnetic-insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al2O3 (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties open the gate for novel devices that require a true ferromagnetic insulator.
1308.3820v2
2014-02-19
Monte Carlo Simulation of RPC-based PET with GEANT4
The Resistive Plate Chambers (RPC) are low-cost charged-particle detectors with good timing resolution and potentially good spatial resolution. Using RPC as gamma detector provides an opportunity for application in positron emission tomography (PET). In this work, we use GEANT4 simulation package to study various methods improving the detection efficiency of a realistic RPC-based PET model for 511keV photons, by adding more detection units, changing the thickness of each layer, choosing different converters and using multi-gaps RPC (MRPC) technique. Proper balance among these factors are discussed. It's found that although RPC with materials of high atomic number can reach a higher efficiency, they may contribute to a poor spatial resolution and higher background level.
1402.4544v1
2014-03-04
Molecular weight dependent bimolecular recombination in organic solar cells
Charge carrier recombination is studied in operational organic solar cells made from the polymer:fullerene system PCDTBT:PC71BM (poly[N-9"-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] : [6,6]-phenyl-C$_{70}$-butyric acid methyl ester). A newly developed technique High Intensity Resistance dependent PhotoVoltage (HI-RPV) is presented for reliably quantifying the bimolecular recombination coefficient independently of variations in experimental conditions, thereby resolving key limitations of previous experimental approaches. Experiments are performed on solar cells of varying thicknesses and varying polymeric molecular weights. It is shown that solar cells made from low molecular weight PCDTBT exhibit Langevin recombination, whereas suppressed (non-Langevin) recombination is found in solar cells made with high molecular weight PCDTBT.
1403.0972v2
2015-01-27
Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb
High quality half-Heusler single crystals of LuPtSb have been synthesized by a Pb flux method. The temperature dependent resistivity and Hall effects indicate that the LuPtSb crystal is a p-type gapless semiconductor showing a transition from semiconducting to metallic conducting at 150 K. Moreover, a weakly temperature-dependent positive magnetoresistance (MR) as large as 109 % and high carrier mobility up to 2950 cm2/Vs are experimentally observed at temperatures below 150 K. The low-field MR data shows evidence for weak antilocalization (WAL) effect at temperatures even up to 150 K. Analysis of the temperature and angle dependent magnetoconductance manifests that the WAL effect originates from the bulk contribution owing to the strong spin-orbital coupling.
1501.06714v1
2015-05-22
Synthesis of monoclinic IrTe2 under high pressure and its physical properties
In a pressure-temperature (P-T) diagram for synthesizing IrTe2 compounds, the well-studied trigonal (H) phase with the CdI2-type structure is stable at low pressures. The superconducting cubic (C) phase can be synthesized under higher temperatures and pressures. A rhombohedral phase with the crystal structure similar to the C phase can be made at ambient pressure; but the phase contains a high concentration of Ir deficiency. In this paper, we report that a rarely studied monoclinic (M) phase can be stabilized in narrow ranges of pressure and temperature in this P-T diagram. The peculiar crystal structure of the M-IrTe2 eliminates the tendency to form Ir-Ir dimers found in the H phase. The M phase has been fully characterized by structural determination and measurements of electrical resistivity, thermoelectric power, DC magnetization, and specific heat. These physical properties have been compared with those in the H and C phases of Ir1-xTe2. Moreover, magnetic and transport properties and specific heat of the M-IrTe2 can be fully justified by calculations with the density-functional theory presented in this paper.
1505.06124v1
2015-08-12
Direct Observation of Re-entrant Multiferroic CuO at High Pressures
We have carried out a detailed experimental investigation on CuO using dielectric constant, ac resistance, Raman spectroscopy and X-ray diffraction measurements at high pressures and room temperature. Both dielectric constant and dielectric loss show an anomalous peak in the pressure range 3.4-4 GPa indicating a ferroelectric transition. Raman studies show anomalous behaviour of the Ag mode with a slope change in the mode frequency and a minimum in the mode FWHM at 3.4 GPa indicating a strong spin phonon coupling along [1 0 -1] direction. A step like behaviour in the intensity of the Ag mode is observed at 3.4 GPa, indicating a change in the polarization of the mode. A maximum in the intensity of (2,0,-2)Bragg peak at 3.4 GPa points the occurrence of critical scattering due to emergence of magnetic exchange interaction. All our experimental evidences show to the presence of re-entrant type-II multiferroic behaviour in CuO at about 4 GPa.
1508.02874v1
2015-10-21
Titanium Nitride as a Seed Layer for Heusler Compounds
Titanium nitride (TiN) shows low resistivity at room temperature, high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by X-ray diffraction and 4-terminal transport measurements. Element specific X-ray absorption spectroscopy revealed pure TiN in the bulk. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode, an out-of-plane magnetized Mn2.45Ga as well as in- and out-of-plane magnetized Co2FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device (SQUID) and anomalous Hall effect (AHE) for Mn2.45Ga. Magneto optical Kerr effect (MOKE) measurements were carried out to investigate the magnetic properties of Co2FeAl. TiN buffered Mn2.45Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co2FeAl showed already good crystallinity when grown at room temperature.
1510.06256v3
2016-04-19
Insulating and metallic spin glass in K$_{x}$Fe$_{2-δ-y}$Ni$_{y}$Se$_{2}$ (0.06 $\leq$ $y$ $\leq$ 1.44) single crystals
We report electron doping effects by Ni in K$_{x}$Fe$_{2-\delta-y}$Ni$_{y}$Se$_{2}$ (0.06 $\leq$ $y$ $\leq$ 1.44) single crystal alloys. A rich ground state phase diagram is observed. Small amount of Ni ($\sim$ 4\%) suppressed superconductivity below 1.8 K, inducing insulating spin glass magnetic ground state for higher Ni content. With further Ni substitution, metallic resistivity is restored. For high Ni concentration in the lattice the unit cell symmetry is high symmetry $I4/mmm$ with no phase separation whereas both $I4/m + I4/mmm$ space groups were detected in the phase separated crystals when concentration of Ni $<$ Fe. The absence of superconductivity coincides with the absence of crystalline Fe vacancy order.
1604.05713v1
2016-05-16
Growth and characterization of CaFe$_{1-x}$Co$_x$AsF single crystals by CaAs flux method
Millimeter sized single crystals of CaFe$_{1-x}$Co$_x$AsF were grown using a self-flux method. It is found that high-quality single crystals can be grown from three approaches with different initial raw materials. The chemical compositions and crystal structure were characterized carefully. The c-axis lattice constant is suppressed by the Co substitution. Superconductivity with the critical transition $T_c$ as high as 21 K was confirmed by both the resistivity and magnetic susceptibility measurements in the sample with $x$ = 0.12. Moreover, it is found that $T_c$ can be enhanced for about 1 K under the very small hydrostatic pressure of 0.22 GPa, which is more quickly than that reported in the polycrystalline samples. Our results is a promotion for the physical investigations of 1111 phase iron-pnictide superconductors.
1605.04642v1
2016-06-02
High Current Density 2D/3D Esaki Tunnel Diodes
The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.
1606.00509v1
2016-06-24
Thermal insulator transition induced by interface scattering
We develop an effective medium model of thermal conductivity that accounts for both percolation and interface scattering. This model accurately explains the measured increase and decrease of thermal conductivity with loading in composites dominated by percolation and interface scattering, respectively. Our model further predicts that strong interface scattering leads to a sharp decrease in thermal conductivity, or an insulator transition, at high loadings when conduction through the matrix is restricted and heat is forced to diffuse through particles with large interface resistance. The accuracy of our model and its ability to predict transitions between insulating and conducting states suggest it can be a useful tool for designing materials with low or high thermal conductivity for a variety of applications.
1606.07851v2
2016-06-29
Large linear magnetoresistance from neutral defects in Bi$_2$Se$_3$
The chalcogenide Bi$_2$Se$_3$ can attain the three dimensional (3D) Dirac semimetal state under the influence of strain and microstrain. Here we report the presnece of large linear magnetoresistance in such a Bi$_2$Se$_3$ crystal. The magnetoresistance has quadratic form at low fields which crossovers to linear above 4 T. The temperature dependence of magnetoresistance scales with carrier mobility and the crossover field scales with inverse of mobility. Our analysis suggest that the linear magnetoresistance in our system has a classical origin and arises from the scattering of high mobility 3D Dirac electrons from crystalline inhomogeneities. We observe that the charged selenium vacancies are strongly screened by high mobility Dirac electrons and the neutral crystalline defects are the main scattering center for transport mechanism. Our analysis suggests that both the resistivity and the magnetoresistance have their origin in scattering of charge carriers from neutral defects.
1606.09059v1
2016-10-03
Thallium under extreme compression
We present a combined theoretical and experimental study of the high-pressure behavior of thallium. X-ray diffraction experiments have been carried out at room temperature up to 125 GPa using diamond-anvil cells, nearly doubling the pressure range of previous experiments. We have confirmed the hcp-fcc transition at 3.5 GPa and determined that the fcc structure remains stable up to the highest pressure attained in the experiments. In addition, HP-HT experiments have been performed up to 8 GPa and 700 K by using a combination of x-ray diffraction and a resistively heated diamond-anvil cell. Information on the phase boundaries is obtained, as well as crystallographic information on the HT bcc phase. The equation of state for different phases is reported. Ab initio calculations have also been carried out considering several potential high-pressure structures. They are consistent with the experimental results and predict that, among the structures considered in the calculations, the fcc structure of thallium is stable up to 4.3 TPa. Calculations also predict the post-fcc phase to have a close-packed orthorhombic structure above 4.3 TPa.
1610.00435v1
2016-10-19
Applications and non-idealities of submicron Al-AlOx-Nb tunnel junctions
We have developed a technique to fabricate sub-micron, 0.6 um x 0.6 um Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as determined by the the high measured values of the critical temperature TC 7.5 K and the gap 1.3 meV. The devices show great promise for local nanoscale thermometry in the temperature range 1 - 7.5 K. Electrical characterization of the junctions was performed at sub-Kelvin temperatures both with and without an external magnetic field, which was used to suppress superconductivity in Al and thus bring the junction into a normal-metal-insulator-superconductor (NIS) configuration. We observed excess sub-gap current, which could not be explained by the standard tunneling theory. Evidence points towards materials science issues of the barrier or Nb/AlOx interface as the culprit.
1610.05903v1
2017-06-28
Super-Hydrophobic Stearic Acid Layer Formed on Anodized High Purified Magnesium for Improving Corrosion Resistance of Biodegradable Implants
Magnesium and its alloys are ideal candidates for biodegradable implants. However, they can dissolve too rapidly in the human body for most applications. In this research, high purified magnesium (HP-Mg) was coated with stearic acid in order to slow the corrosion rate of magnesium in simulated body fluid at 37{\deg}C. HP-Mg was anodized to form an oxide/hydroxide layer, then it was immersed in a stearic acid solution. Electrochemical impedance spectroscopy and potentiodynamic polarization were used to estimate the corrosion rate of HP-Mg specimens. The results confirm that the hydrophobic coating can temporarily decrease the corrosion rate of HP-Mg by 1000x.
1706.09508v1
2017-10-19
Design of high-strength refractory complex solid-solution alloys
Nickel-based superalloys and near-equiatomic high-entropy alloys containing Molybdenum are known for higher temperature strength and corrosion resistance. Yet, complex solid-solution alloys offer a huge design space to tune for optimal properties at slightly reduced entropy. For refractory Mo-W-Ta-Ti-Zr, we showcase KKR electronic-structure methods via the coherent-potential approximation to identify alloys over 5-dimensional design space with improved mechanical properties and necessary global (formation enthalpy) and local (short-range order) stability. Deformation is modeled with classical molecular dynamic simulations, validated from our first-principles data. We predict complex solid-solution alloys of improved stability with greatly enhanced modulus of elasticity ($3\times$ at 300 K) over near-equiatomic cases, as validated experimentally, and with higher moduli above 500~K over commercial alloys ($2.3\times$ at 2000 K). We also show that optimal complex solid-solution alloys are not described well by classical potentials due to critical electronic effects.
1710.06983v2
2017-11-16
Superconductivity at 7.3 K in the 133-type Cr-based RbCr3As3 single crystals
Here we report the preparation and superconductivity of the 133-type Cr-based quasi-one-dimensional (Q1D) RbCr3As3 single crystals. The samples were prepared by the deintercalation of Rb+ ions from the 233-type Rb2Cr3As3 crystals which were grown from a high-temperature solution growth method. The RbCr3As3 compound crystallizes in a centrosymmetric structure with the space group of P63/m (No. 176) different with its non-centrosymmetric Rb2Cr3As3 superconducting precursor, and the refined lattice parameters are a = 9.373(3) {\AA} and c = 4.203(7) {\AA}. Electrical resistivity and magnetic susceptibility characterizations reveal the occurrence of superconductivity with an interestingly higher onset Tc of 7.3 K than other Cr-based superconductors, and a high upper critical field Hc2(0) near 70 T in this 133-type RbCr3As3 crystals.
1711.06133v1
2017-12-01
Radiation damage and thermal shock response of carbon-fiber-reinforced materials to intense high-energy proton beams
A comprehensive study on the effects of energetic protons on carbon-fiber composites and compounds under consideration for use as low-Z pion production targets in future high-power accelerators and low-impedance collimating elements for intercepting TeV-level protons at the Large Hadron Collider has been undertaken addressing two key areas, namely, thermal shock absorption and resistance to irradiation damage.
1712.00509v1
2018-01-08
Automated Instrumentation for the Determination of the High-Temperature Thermoelectric Figure-of-Merit
In this work, we report the fabrication of a high temperature measurement setup to measure Figure of merit (ZT). This setup facilitates the simultaneous measurement of Seebeck coefficient ({\alpha}), thermal conductivity (\kappa), and electrical resistivity (\rho) required to calculate ZT. Measurement of temperature, as well as voltages using same thermocouples, simplified the design of the setup by minimizing sensors and wires. Limited components used in the sample holder further simplify the design and make it small in size and lightweight. The dedicated thin heater is made, which minimizes the heat loss. Further, low heat loss is achieved by optimizing the insulator dimension. To measure power delivered to the heater, 4-wire technique is used. Low cost and commonly available materials used in the fabrication of various components make it more accessible to the user as any parts can be easily replaced in case of any damage occurs. A dedicated program is built in the Python programming language to automate the whole measurement process. p-type Bi0.36Sb1.45Te3 sample is used to calibrate this measurement setup. The data collected are found to be in good agreement with the reported data.
1801.02360v1
2018-01-30
Structural and electronic phase transitions in FePS$_3$ under the application of pressure
Two-dimensional materials have proven to be a prolific breeding ground of new and unstudied forms of magnetism and unusual metallic states, particularly when tuned between their insulating and metallic phases. In this paper we present work on a new metal to insulator transition system FePS$_3$ . This compound is a two-dimensional van-der-Waals antiferromagnetic Mott insulator. Here we report the discovery of an insulator-metal transition in FePS$_3$, as evidenced by x-ray diffraction and electrical transport measurements, using high pressure as a tuning parameter. Two structural phase transitions are observed in the x-ray diffraction data as a function of pressure and resistivity measurements show evidence of onset of a metallic state at high pressures. We propose models for the two new structures that can successfully explain the x-ray diffraction patterns.
1801.10089v2
2018-03-14
A 1.6:1 Bandwidth Two-Layer Antireflection Structure for Silicon Matched to the 190-310 GHz Atmospheric Window
Although high-resistivity, low-loss silicon is an excellent material for THz transmission optics, its high refractive index necessitates antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting subwavelength structures into the silicon surface using multi-depth deep reactive ion etching (DRIE). A wafer with this treatment on both sides has <-20 dB (<1%) reflectance over 190-310 GHz. We also demonstrated that bonding wafers introduces no reflection features above the -20 dB level, reproducing previous work. Together these developments immediately enable construction of wide-bandwidth silicon vacuum windows and represent two important steps toward gradient-index silicon optics with integral broadband antireflection treatment.
1803.05168v2
2018-04-26
Large effective mass and interaction-enhanced Zeeman splitting of $K$-valley electrons in MoSe$_2$
We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe$_2$, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8$m_e$ is extracted from the SdH oscillations' temperature dependence; $m_e$ is the bare electron mass. At a fixed electron density the longitudinal resistance shows minima at filling factors (FFs) that are either predominantly odd, or predominantly even, with a parity that changes as the density is tuned. The SdH oscillations are insensitive to an in-plane magnetic field, consistent with an out-of-plane spin orientation of electrons at the $K$-point. We attribute the FFs parity transitions to an interaction enhancement of the Zeeman energy as the density is reduced, resulting in an increased Zeeman-to-cyclotron energy ratio.
1804.10104v2
2018-05-31
Unusual magnetotransport in holmium monoantimonide
We report the magnetotransport properties of HoSb, a semimetal with antiferromagnetic ground state. HoSb shows extremely large magnetoresistance (XMR) and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Different from previous reports in other rare earth monopnictides, kinks in $\rho(B)$ and $\rho_{xy}(B)$ curves and the field dependent resistivity plateau are observed in HoSb, which result from the magnetic phase transitions. The fast Fourier transform analysis of the SdH oscillation reveals the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction. The Berry phase extracted from SdH oscillation indicates the possible nontrivial electronic structure of HoSb in the presence of magnetic field. The Hall measurements suggest that the XMR originates from the electron-hole compensation and high mobility.
1805.12496v1
2018-06-28
Tribological Properties of Ultrananocrystalline Diamond Nanowire Thin Film: Influence of Sliding Ball Counterbodies
Ultrananocrystalline Diamond Nanowire (UNCD NW) thin film was deposited on mirror polished silicon substrate (100) using Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) System with optimized deposition parameters in CH4 (6%)/N2 plasma media. The film exhibited wire like morphology with randomly oriented and homogeneously distributed ultranano diamond grains separated by an interphase boundary of graphitic and amorphous carbon (a-C) phases. Micro-tribological studies of film were carried out against Al2O3, SiC and steel balls in ambient atmospheric conditions. Initially, the friction coefficient was found to be high for UNCD NW/SiC and UNCD NW/Steel sliding pairs which gradually decreased to low value. While, in UNCD NW/Al2O3 sliding combination, the ultralow value of friction coefficient was maintained throughout the whole sliding process. High wear resistant properties of the film were observed in UNCD NW/SiC and UNCD NW/Steel pairs. In UNCD NW/Al2O3 case, ball counterbody showed negligible wear dimension. Such kind of tribological behavior was attributed to the different type of mechanical and chemical interactions of ball counterbodies with UNCD NW thin film.
1806.10765v1
2018-09-13
Anisotropic hybridization in a new Kondo lattice compound CeCoInGa$_3$
We report a detailed and comparative study of the single crystal CeCoInGa$_3$ in both experiment and theory. Resistivity measurements reveal the typical behavior of Kondo lattice with the onset temperature of coherence, $T^*\approx 50\,$K. The magnetic specific heat can be well fitted using a spin-fluctuation model at low temperatures, yielding a large Sommerfeld coefficient, $\gamma\approx172\,$mJ/mol K$^2$ at 6 K, suggesting that this is a heavy-fermion compound with a pronounced coherence effect. The magnetic susceptibility exhibits a broad field-independent peak at $T_{\chi}$ and shows an obvious anisotropy within the $bc$ plane, reflecting the anisotropy of the coherence effect at high temperatures. These are compared with strongly correlated calculations combining first-principles band structure calculations and dynamical mean-field theory. Our results confirm the onset of coherence at about 50 K and reveal a similar anisotropy in the hybridization gap, pointing to a close connection between the hybridization strength of the low-temperature Fermi-liquid state and the high-temperature coherence effect.
1809.04735v1
2018-11-18
In situ high-cycle fatigue reveals the importance of grain boundary structure in nanocrystalline Cu-Zr
Nanocrystalline metals typically have high fatigue strengths, but low resistance to crack propagation. Amorphous intergranular films are disordered grain boundary complexions that have been shown to delay crack nucleation and slow crack propagation during monotonic loading by diffusing grain boundary strain concentrations, suggesting they may also be beneficial for fatigue properties. To probe this hypothesis, in situ transmission electron microscopy fatigue cycling is performed on Cu-1 at.% Zr thin films thermally treated to have either only ordered grain boundaries or to contain amorphous intergranular films. The sample with only ordered grain boundaries experienced grain coarsening at crack initiation followed by unsteady crack propagation and extensive nanocracking, whereas the sample containing amorphous intergranular films had no grain coarsening at crack initiation followed by steady crack propagation and distributed plastic activity. Microstructural design for control of these behaviors through simple thermal treatments can allow for the improvement of nanocrystalline metal fatigue toughness.
1811.07263v1
2019-09-02
Thermoelastic equation of state and melting of Mg metal at high pressure and high temperature
The p-V-T equation of state of magnesium metal has been measured up to 20 GPa and 1500 K using both multianvil and opposite anvil techniques combined with synchrotron X-ray diffraction. To fit the experimental data, the model of Anderson-Gr\"uneisen has been used with fixed parameter {\delta}T. The 300-K bulk modulus of B0 = 32.5(1) GPa and its first pressure derivative, B0' = 3.73(2), have been obtained by fitting available data up to 20 GPa to Murnaghan equation of state. Thermal expansion at ambient pressure has been described using second order polynomial with coefficients a = 25(2)x10-6 K-1 and b = 9.4(4)x10-9 K-2. The parameter describing simultaneous pressure and temperature impact on thermal expansion coefficient (and, therefore, volume) is {\delta}T = 1.5(5). The good agreement between fitted and experimental isobars has been achieved to relative volumes of 0.75. The Mg melting observed by X-ray diffraction and in situ electrical resistivity measurements confirms previous results and additionally confirms the p-T estimations in the vicinity of melting.
1909.00645v1
2014-08-28
Crossover of conduction mechanism in Sr2IrO4 epitaxial thin films
High quality epitaxial Sr2IrO4 thin films with various thicknesses (9-300 nm) have been grown on SrTiO3 (001) substrates, and their electric transport properties have been investigated. All samples showed the expected insulating behavior with a strong resistivity dependence on film thickness, that can be as large as three orders of magnitude at low temperature. A close examination of the transport data revealed interesting crossover behaviors for the conduction mechanism upon variation of thickness and temperature. While Mott variable range hopping (VRH) dominated the transport for films thinner than 85 nm, high temperature thermal activation behavior was observed for films with large thickness, which was followed by a crossover from Mott to Efros-Shklovskii (ES) VRH in the low temperature range. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~3 meV). Our results demonstrate the competing and tunable conduction in Sr2IrO4 thin films, which in turn would be helpful for understanding the insulating nature related to strong spin-orbit-coupling of the 5d iridates.
1408.6798v1
2017-03-01
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed metal contact, and obtained a low contact resistance of Rc=4.8x10-5 Ohm cm2 on n-Al0.75Ga0.25N. We also observed a significant reduction in the forward operation voltage from 30.9 V to 19.2 V at 1 kA/cm2 by increasing the Mg doping concentration from 6.2x1018 cm-3 to 1.5x1019 cm-3. Non-equilibrium hole injection into wide bandgap Al0.75Ga0.25N with Eg>5.2 eV was confirmed by light emission at 257 nm. This work demonstrates the feasibility of tunneling hole injection into deep UV LEDs, and provides a novel structural design towards high power deep-UV emitters.
1703.00117v1
2019-02-27
High-performance dendritic metamaterial absorber for broadband and near-meter wave radar
Absorbing materials in ultra-high frequency (UHF) band has constantly been a major challenge. The size of the absorber in UHF band is large, whereas the resonant frequency band is narrow. According to Rozanov's theory, two kinds of composite metamaterial absorbers are designed to realize the requirements of low-frequency broadband metamaterial microwave absorber: the magnetic-metamaterial composite absorber1 (MA1) and the dielectric-metamaterial composite absorber 2 (MA2). In the range of approximately 300-1000MHz, both absorbers achieve absorption of over 90% and feature good adaptability to the incident angle of the incident wave. The absorbers also present good absorption rate of over 80% in the range of 0-45 degree. Processing samples of indium tin oxide (ITO) resistance film and polymethacrylimide (PMI) foam board feature simple preparation and low cost, and the most important thing is to consider the weight problem, which features certain advantages in terms of use.
1902.10398v1
2019-07-29
Mechanical Characterisation of the Protective Al$_2$O$_3$ Scale in Cr$_2$AlC MAX phases
MAX phases have great potential under demands of both high-temperature and high-stress performance, with their mixed atomic bonding producing the temperature and oxidation resistance of ceramics with the mechanical resilience of metals. Here, we measure the mechanical properties up to 980C by nanoindentation on highly dense and pure Cr$_2$AlC, as well as after oxidation with a burner rig at 1200C for more than 29 hours. Only modest reductions in both hardness and modulus up to 980C were observed, implying no change in deformation mechanism. Furthermore, micro-cantilever fracture tests were carried out at the Cr$_2$AlC/Cr$_7$C$_3$ and Cr$_7$C$_3$/Al$_2$O$_3$ interfaces after the oxidation of the Cr$_2$AlC substrates with said burner rig. The values are typical of ceramic-ceramic interfaces, below 4 MPa/m, leading to the hypothesis that the excellent macroscopic behaviour is due to a combination of low internal strain due to the match in thermal expansion coefficient as well as the convoluted interface.
1907.12341v1
2019-03-21
Stabilization and heteroepitaxial growth of metastable tetragonal FeS thin films by pulsed laser deposition
Pulsed laser deposition, a non-equilibrium thin-film growth technique, was used to stabilize metastable tetragonal iron sulfide (FeS), the bulk state of which is known as a superconductor with a critical temperature of 4 K. Comprehensive experiments revealed four important factors to stabilize tetragonal FeS epitaxial thin films: (i) an optimum growth temperature of 300 {\deg}C followed by thermal quenching, (ii) an optimum growth rate of ~7 nm/min, (iii) use of a high-purity bulk target, and (iv) use of a single-crystal substrate with small in-plane lattice mismatch (CaF2). Electrical resistivity measurements indicated that none of all the films exhibited superconductivity. Although an electric double-layer transistor structure was fabricated using the tetragonal FeS epitaxial film as a channel layer to achieve high-density carrier doping, no phase transition was observed. Possible reasons for the lack of superconductivity include lattice strain, off-stoichiometry of the film, electrochemical etching by the ionic liquid under gate bias, and surface degradation during device fabrication.
1903.08820v1
2019-03-26
Gate tunable quantum Hall effects in defect-suppressed Bi2Se3 films
Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high density of interfacial defects. Here, utilizing an optimal buffer layer on a gatable substrate, we demonstrate the first electrically tunable quantum Hall effects (QHE) on TSS of Bi2Se3. On the n-side, well-defined QHE shows up, but it diminishes near the charge neutrality point (CNP) and completely disappears on the p-side. Furthermore, around the CNP the system transitions from a metallic to a highly resistive state as the magnetic field is increased, whose temperature dependence indicates presence of an insulating ground state at high magnetic fields.
1903.10945v2
2019-04-09
Alloy Design for Mechanical Properties: Conquering the Length Scales
Predicting the structural response of advanced multiphase alloys and understanding the underlying microscopic mechanisms that are responsible for it are two critically important roles modeling plays in alloy development. An alloys demonstration of superior properties, such as high strength, creep resistance, high ductility, and fracture toughness, is not sufficient to secure its use in widespread application. Still, a good model is needed, to take measurable alloy properties, such as microstructure and chemical composition, and forecast how the alloy will perform in specified mechanical deformation conditions, including temperature, time, and rate. In this bulletin, we highlight recent achievements by multiscale modeling in elucidating the coupled effects of alloying, microstructure, and the dynamics of mechanisms on the mechanical properties of polycrystalline alloys. Much of the understanding gained by these efforts relied on integration of computational tools that varied over many length and time scales, from first principles density functional theory, atomistic simulation methods, dislocation and defect theory, micromechanics, phase field modeling, single crystal plasticity, and polycrystalline plasticity.
1904.04569v1
2019-08-13
Investigating the real-time dissolution of a compositionally complex alloy using inline ICP and correlation with XPS
The real-time dissolution of the single-phase compositionally complex alloy (CCA), Al1.5TiVCr, was studied using an inline inductively coupled plasma method. Compositionally complex alloys (CCAs), a term encompassing high entropy alloys (HEAs) or multi-principal element alloys (MPEAs), are - in general - noted for their inherently high corrosion resistance. In order to gain an insight into the dissolution of Al1.5TiVCr alloy, atomic emission spectroelectrochemistry was utilised in order to measure the ion dissolution of the alloy during anodic polarisation. It was revealed that incongruent dissolution occurred, with preferential dissolution of Al, and essentially no dissolution of Ti, until the point of alloy breakdown. Results were correlated with X-ray photoelectron spectroscopy, which revealed a complex surface oxide inclusive of unoxidised metal, and metal oxides in disproportion to the bulk alloying element ratio.
1908.04493v1
2012-06-01
Quantum Superinductor with Tunable Non-Linearity
We report on the realization of a superinductor, a dissipationless element whose microwave impedance greatly exceeds the resistance quantum. The design of the superinductor, implemented as a ladder of nanoscale Josephson junctions, enables tuning of the inductance and its nonlinearity by a weak magnetic field. The Rabi decay time of the superinductor-based qubit exceeds 1 microsecond. The high kinetic inductance and strong nonlinearity offer new types of functionality, including the development of qubits protected from both flux and charge noises, fault tolerant quantum computing, and high-impedance isolation for electrical current standards based on Bloch oscillations.
1206.0307v2
2015-07-10
Antibunched photons from inelastic Cooper-pair tunneling
We demonstrate theoretically that charge transport across a Josephson junction, voltage-biased through a resistive environment, produces antibunched photons. We develop a continuous-mode description of the emitted radiation field in a semi-infinite transmission line terminated by the Josephson junction. Within a perturbative treatment in powers of the tunneling coupling across the Josephson junction, we capture effects originating in charging dynamics of consecutively tunneling Cooper pairs. We find that within a feasible experimental setup the Coulomb blockade provided by high zero-frequency impedance can be used to create antibunched photons at a very high rate and in a very versatile frequency window ranging from a few GHz to a THz.
1507.02885v1
2018-07-20
High-Pressure Phase Diagram of NdFeAsO$_{0.9}$F$_{0.1}$: Disappearance of superconductivity on the verge of ferromagnetism from nd moments
We investigated transport and magnetic properties of NdFeAsO$_{0.9}$F$_{0.1}$ single crystal under hydrostatic pressures up to 50\,GPa. The ambient pressure superconductivity at $T_{c} \sim$ 45.4\,K is fully suppressed at $P_{c} \sim$ 21 GPa. Upon further increase of the pressure, the ferromagnetism associated with the order of rare-earth subsystem is induced at the border of superconductivity. Our finding is supported by the hysteresis in the magnetization $M$($H$) loops and the strong increase in the field cooled data, $M$($T$), toward low temperatures. We also show that the temperature evolution of the electrical resistivity as a function of pressure is consistent with a crossover from a Fermi-liquid to non-Fermi-liquid to Fermi-liquid. These results give access to the high-pressure side of the superconducting phase diagram in 1111 type of materials.
1807.07729v1
2018-12-19
Benchmarking vdW-DF first principle predictions against Coupled Electron-Ion Monte Carlo for high pressure liquid hydrogen
We report first principle results for nuclear structure and optical responses of high pressure liquid hydrogen along two isotherms in the region of molecular dissociation. We employ Density Functional Theory with the vdW-DF approximation (vdW) and we benchmark the results against existing predictions from Coupling Electron-Ion Monte Carlo (CEIMC). At fixed density and temperature, we find that pressure from vdW is higher than pressure from CEIMC by about 10 GPa in the molecular insulating phase and about 20 GPa in the dissociated metallic phase. Molecules are found to be overstabilized using vdW, with a slightly shorter bond length, and with a stronger resistance to compression. As a consequence, pressure dissociation along isotherms using vdW is more progressive than computed with CEIMC. Below the critical point, the liquid-liquid phase transition is observed with both theories in the same density region but the one predicted by vdW has a smaller density discontinuity, i.e. a smaller first order character. The optical conductivity computed using Kubo-Greenwood is rather similar for the two systems and reflects the slightly more pronounced molecular character of vdW.
1812.07818v1
2019-10-01
In-situ detection of nucleation in high temperature solutions
The state of a sample during crystal growth from high temperature solutions is not accessible in conventional furnace systems. An optimization of the growth parameters often requires arduous trial and error procedures in particular in case of novel multicomponent systems with unknown phase diagrams. Here we present a measurement technique based on lock-in amplification that allows for in-situ detection of the liquidus and solidus temperatures as well as structural phase transitions. A thin, metallic measurement wire is mounted in close vicinity to the melt. Characteristic anomalies in the time-dependent electrical resistivity of this wire allow for the detection of latent heat release without using a reference crucible. The method is implemented in a 'feedback furnace' and enables an adjustment of the temperature profile based on the occurrence or absence of phase transitions. The absolute temperature serves as an additional source of information. Obtained phase transition temperatures are in good agreement with differential thermal analysis (DTA).
1910.00316v1
2019-10-04
Improvement of temperature uniformity of induction-heated T-shape susceptor for high-temperature MOVPE
The induction heating is a common method applied in metalorganic vapor phase epitaxy (MOVPE) especially for higher-temperature growth conditions. However, compared to the susceptor heated by the multiple-zone resistant heater, the inductive-heated susceptor could suffer from severe thermal non-uniformity issue. In this simulation study, we propose to employ a T-shape susceptor design with various geometric modifications to significantly improve the substrate temperature uniformity by manipulating thermal transfer. Specifically, the thermal profile can be tailored by horizontal expansion and vertical elongation of the susceptor, or forming a cylindrical hollow structure at the susceptor bottom cylinder. Three optimized designs are shown with different temperature uniformity as well as various induction heating efficiencies. The temperature variation of the entire substrate surface can be less than 5 {\deg}C at ~1900 {\deg}C with high induction heating efficiency after applying the proposed techniques.
1910.02024v1
2019-10-21
Harnessing energy landscape exploration to control the buckling of cylindrical shells
The complexity and unpredictability of postbuckling responses in even simple thin shells have raised great challenges to emerging technologies exploiting buckling transitions. Here we comprehensively survey the buckling landscapes to show the full complexity of the stable buckling states and the transition mechanisms between each of them. This is achieved by combining a simple and versatile triangulated lattice model for modelling the shell morphologies with efficient high-dimensional free-energy minimisation and transition path finding algorithms. We show how the simple free energy landscapes of short, lightly compressed cylinders become vastly more complex at high compressive strains or aspect ratios. We then exploit these landscapes to introduce an effective method for targeted design - landscape biasing. This is used to inform thickness modifications enabling landscape redesign, and the development of structures which are highly resistant to lateral perturbations. Our methods are general, and can be extended to studying postbuckling responses of other geometries.
1910.09210v1
2019-11-07
Long- to short-junction crossover and field-reentrant critical current in Al/Ag-nanowires/Al Josephson junctions
We have probed the superconducting proximity effect through long high-quality monocrystalline Ag nanowires, by realizing Josephson junctions of different lengths, with different superconducting materials. Thanks to the high number of junctions probed, both the contact resistance and electron diffusion constant could be determined, enabling a comparison of the measured critical current to theoretical expectation, over the entire regime from short to long diffusive junction. Although the length dependence of the critical current is as expected, the amplitude of the $R_{N}I_c$ product is smaller than predicted by theory. We also address the magnetic field dependence of the critical current. The quasi-gaussian decay of the critical current with field expected of a long narrow junction is observed for all superconducting contacts we used except for aluminum. We present the striking non-monotonous effect of field on the critical current of junctions with aluminum contacts, and analyze it in terms of improved quasiparticle thermalization by a magnetic field.
1911.02962v1
2019-11-13
Giant enhancement of cryogenic thermopower by polar structural instability in the pressurized semimetal MoTe2
We found that a high mobility semimetal 1T'-MoTe2 shows a significant pressure-dependent change in the cryogenic thermopower in the vicinity of the critical pressure, where the polar structural transition disappears. With the application of a high pressure of 0.75 GPa, while the resistivity becomes as low as 10 {\mu}{\Omega}cm, thermopower reached the maximum value of 60 {\mu}VK-1 at 25 K, leading to a giant thermoelectric power factor of 300 {\mu}WK-2cm-1. Based on semiquantitative analyses, the origin of this behavior is discussed in terms of inelastic electron-phonon scattering enhanced by the softening of zone center phonon modes associated with the polar structural instability.
1911.05269v1
2019-11-26
One-directional thermal transport in densely aligned single-wall carbon nanotube films
Individual carbon nanotubes (CNTs) possess extremely high thermal conductivities. However, the thermal conductivities and their anisotropy of macroscopic assemblies of CNTs have so far remained small. Here, we report results of directional thermal transport measurements on a nearly-perfectly aligned CNT film fabricated via controlled vacuum filtration. We found the thermal conductivity to be 43 +- 2.2 W m^-1 K^-1 with a record-high thermal anisotropy of 500. From the temperature dependence of the thermal conductivity and its agreement with the atomistic phonon transport calculation, we conclude that the effect of intertube thermal resistance on heat conduction in the alignment direction is negligible because of the large contact area between CNTs. These observations thus represent ideal unidirectional thermal transport, i.e., the thermal conductivity of the film is determined solely by that of individual CNTs.
1911.11340v1
2020-05-05
Nanofilm Materials for Devices of Magnetic Field Measurement in Radiation Environment
The prospects of using nanofilms of indium-containing III-V semiconductors, gold and single-layer graphene in magnetic field sensors, intended for application in radiation environment were evaluated on the results of testing in neutron fluxes. Semiconductor sensors are capable of withstanding radiation levels typical for the ITER-type fusion reactors, while gold sensors are stable even under environment expected in the first fusion power plant DEMO. Graphene is promising for creating sensors that combine high magnetic field sensitivity and high irradiation resistance.
2005.02075v1
2020-11-11
Synthesis of high-entropy-alloy-type superconductors (Fe,Co,Ni,Rh,Ir)Zr2 with tunable transition temperature
We report on the synthesis and superconductivity of high-entropy-alloy-type (HEA-type) compounds TrZr2 (Tr = Fe, Co, Ni, Rh, Ir), in which the Tr site satisfies the criterion of HEA. Polycrystalline samples of HEA-type TrZr2 with four different compositions at the Tr site were synthesized by arc melting method. The phase purity and crystal structure were examined by Rietveld refinement of X-ray diffraction profile. It has been confirmed that the obtained samples have a CuAl2-type tetragonal structure. From analyses of elemental composition and mixing entropy at the Tr site, the HEA state for the Tr site was confirmed. The physical properties of obtained samples were characterized by electrical resistivity and magnetization measurements. All the samples show bulk superconductivity with various transition temperature (Tc). The Tc varied according to the compositions and showed correlations with the lattice constant c and Tr-Zr bond lengths. Introduction of an HEA site in TrZr2 is useful to achieve systematic tuning of Tc with a wide temperature range, which would be a merit for superconductivity application.
2011.05590v1