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2023-11-14
Observation of high-temperature superconductivity in the high-pressure tetragonal phase of La2PrNi2O7-δ
The recent discovery of high-temperature superconductivity in the Ruddlesden-Popper phase La3Ni2O7 under high pressure marks a significant breakthrough in the field of 3d transition-metal oxide superconductors. For an emerging novel class of high-Tc superconductors, it is crucial to find more analogous superconducting ...
2311.08212v2
1999-01-11
SQUID based resistance bridge for shot noise measurement on low impedance samples
We present a resistance bridge which uses a SQUID to measure the shot noise in low impedance samples. The experimental requirements are high DC bias currents (typically 10mA) together with high AC sensitivity (pA/VHz). This system is used to investigate the shot noise in Superconductor/Normal/Superconductor junctions w...
9901090v2
1999-05-12
Nonmonotonic Temperature-dependent Resistance in Low Density 2D Hole Gases
The low temperature longitudinal resistance-per-square Rxx(T) in ungated GaAs/AlGaAs quantum wells of high peak hole mobility 1.7x10^6 cm^2/Vs is metallic for 2D hole density p as low as 3.8x10^9 cm-2. The electronic contribution to the resistance, R_{el}(T), is a nonmonotonic function of T, exhibiting thermal activati...
9905176v1
2005-07-28
Phononless thermally activated transport through a disordered array of quantum wires
Phononless plasmon assisted transport through a long disordered array of finite length quantum wires is investigated analytically. Two temperature regimes, the low- and the high-temperature ones, with qualitatively different temperature dependencies of thermally activated resistance are identified. The characteristics ...
0507687v1
2007-02-22
High-field Hall resistivity and magnetoresistance in electron-doped Pr_2-xCe_xCuO_{4-δ}
We report resistivity and Hall effect measurements in electron-doped Pr$_{2-x}$Ce$_{x}$CuO$_{4-\delta}$ films in magnetic field up to 58 T. In contrast to hole-doped cuprates, we find a surprising non-linear magnetic field dependence of Hall resistivity at high field in the optimally doped and overdoped films. We also ...
0702534v2
2007-01-13
First Tests of Thick GEMs with Electrodes Made of a Resistive Kapton
We have developed a new design of a GEM-like detector with single-layer electrodes made of a resistive kapton. This detector can operate at gains close to 10E5 even in pure Ar and Ne and if transited to discharges at higher gains they, due to the high resistivity of electrodes, do not damage either the detector or the ...
0701154v1
1995-07-03
Percolation transition of the vortex lattice and c-axis resistivity in high-temperature superconductors
We use the three-dimensional Josephson junction array system as a model for studying the temperature dependence of the c-axis resistivity of high temperature superconductors, in the presence of an external magnetic field H applied in the c-direction. We show that the temperature at which the dissipation becomes differe...
9507001v1
2007-06-21
Addendum: "On the nature of the phase transition in the itinerant helimagnet MnSi", arXiv:cond-mat/0702460v1 [cond-mat.str-el]
New high resolution data for heat capacity, heat capacity under applied magnetic fields and resistivity of high quality single crystal of MnSi are reported. Striking mirror symmetry between temperature derivative of resistivity and thermal expansion coefficient of MnSi is displayed. Close similarity between variation o...
0706.3093v1
2009-02-24
Phonon-induced Resistance Oscillations in Very-high Mobility 2D Electron Systems
We report on temperature dependence of acoustic phonon-induced resistance oscillations in very high mobility two-dimensional electron systems. We observe that the temperature dependence is non-monotonic and that higher order oscillations are best developed at progressively lower temperatures. Our analysis shows that, i...
0902.4208v1
2009-09-11
Resistive g-modes in a reversed field pinch plasma
First direct experimental evidence of high frequency, high toroidal mode number (n>20), magnetic fluctuations due to unstable resistive interchange modes (g-modes) resonant in the edge region of a reversed field pinch (RFP) plasma is presented. Experimental characterization of time and space periodicities of the modes ...
0909.2153v1
2010-07-16
Zero differential resistance in two-dimensional electron systems at large filling factors
We report on a state characterized by a zero differential resistance observed in very high Landau levels of a high-mobility two-dimensional electron system. Emerging from a minimum of Hall field-induced resistance oscillations at low temperatures, this state exists over a continuous range of magnetic fields extending w...
1007.2832v1
2013-10-09
Effect of Temperature and Charged Particle Fluence on the Resistivity of Polycrystalline CVD Diamond Sensors
The resistivity of polycrystalline chemical vapor deposition diamond sensors is studied in samples exposed to fluences relevant to the environment of the High Luminosity Large Hadron Collider. We measure the leakage current for a range of bias voltages on samples irradiated with 800 MeV protons up to 1.6\times 10^{16} ...
1310.2620v1
2016-07-04
Vortex motion and flux-flow resistivity in dirty multiband superconductors
The conductivity of vortex lattices in multiband superconductors with high concentration of impurities is calculated based on microscopic kinetic theory. Both the limits of high and low fields are considered, when the magnetic induction is close to or much smaller than the critical field strength $H_{c2}$, respectively...
1607.00708v2
2023-02-27
Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3
We present our studies on polycrystalline samples of fluorine doped LaMnO3 (LaMnO3-yFy). LaMnO2.5F0.5 exhibits remarkable magnetic and electrical properties. It shows ferromagnetic and metallic behavior with a high Curie temperature of ~ 239 K and a high magnetoresistance of -64. This drastic change in magnetic propert...
2302.13845v1
2009-07-25
Superconductivity in Undoped Single Crystals of BaFe2As2: Field and Current Dependence
In previous work in undoped MFe2As2, partial drops in the resistivity indicative of traces of superconductivity have been observed in some samples of M=Ba (Tc ~ 20 K, up to 25% drop in resistivity) and M=Ca (Tc ~ 10 K, up to 45 % drop in resistivity.) A complete drop in the resistivity to 0, along with a finite fractio...
0907.4429v1
2019-03-12
Signatures of Anelastic Domain Relaxation in Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ Investigated by Mechanical Modulation of Resistivity
The resistive response of Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ to AC mechanical deformation is considered in the multi-domain state. This resistance change depends both upon the anelastic relaxation of domain walls and upon the relation between resistance and the domain wall configuration. Samples are adhered to the su...
1903.04732v1
2005-02-09
Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3
Ti-substituted perovskites, La0.7Sr0.3Mn1-xTixO3, with x between 0 to 0.20, were investigated by neutron diffraction, magnetization, electric resistivity, and magnetoresistance (MR) measurements. All samples show a rhombohedral structure (space group R3c) from 10 K to room temperature. At room temperature, the cell par...
0502235v1
2020-12-08
Quantitative measurement of the thermal contact resistance between a glass microsphere and a plate
Accurate measurements of the thermal resistance between micro-objects made of insulating materials are complex because of their small size, low conductivity, and the presence of various ill-defined gaps. We address this issue using a modified scanning thermal microscope operating in vacuum and in air. The sphere-plate ...
2012.04291v1
2002-01-19
Antiferromagnetic Order Induced by an Applied Magnetic Field in a High-Temperature Superconductor
One view of the cuprate high-transition temperature (high-Tc) superconductors is that they are conventional superconductors where the pairing occurs between weakly interacting quasiparticles, which stand in one-to-one correspondence with the electrons in ordinary metals - although the theory has to be pushed to its lim...
0201349v1
2013-01-22
Exceptional ballistic transport in epitaxial graphene nanoribbons
Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produc...
1301.5354v2
2022-01-25
KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals
High-quality single crystals of KCo$_2$As$_2$ with the body-centered tetragonal ThCr$_2$Si$_2$ structure were grown using KAs self flux. Structural, magnetic, thermal, and electrical transport were investigated. No clear evidence for any phase transitions was found in the temperature range 2 to 300 K. The in-plane elec...
2201.10325v1
2023-01-25
Investigation of Planckian behavior in a high-conductivity oxide: PdCrO$_2$
The layered delafossite metal PdCrO$_2$ is a natural heterostructure of highly conductive Pd layers Kondo coupled to localized spins in the adjacent Mott insulating CrO$_2$ layers. At high temperatures $T$ it has a $T$-linear resistivity which is not seen in the isostructural but non-magnetic PdCoO$_2$. The strength of...
2301.10631v1
1995-06-01
Role of phason-defects on the conductance of a 1-d quasicrystal
We have studied the influence of a particular kind of phason-defect on the Landauer resistance of a Fibonacci chain. Depending on parameters, we sometimes find the resistance to decrease upon introduction of defect or temperature, a behavior that also appears in real quasicrystalline materials. We demonstrate essential...
9506004v2
1997-12-12
Surface Resistance Imaging with a Scanning Near-Field Microwave Microscope
We describe near-field imaging of sample sheet resistance via frequency shifts in a resonant coaxial scanning microwave microscope. The frequency shifts are related to local sample properties, such as surface resistance and dielectric constant. We use a feedback circuit to track a given resonant frequency, allowing mea...
9712142v1
1997-12-15
Quantitative Imaging of Sheet Resistance with a Scanning Near-Field Microwave Microscope
We describe quantitative imaging of the sheet resistance of metallic thin films by monitoring frequency shift and quality factor in a resonant scanning near-field microwave microscope. This technique allows fast acquisition of images at approximately 10 ms per pixel over a frequency range from 0.1 to 50 GHz. In its cur...
9712171v1
1999-07-13
Na-site substitution effects of the thermoelectric properties of NaCo_2O_4
The resistivity and thermopower of Na$_{1+x}$Co$_2$O$_4$ and Na$_{1.1-x}$Ca$_x$Co$_2$O$_4$ are measured and analyzed. In Na$_{1+x}$Co$_2$O$_4$, whereas the resistivity increases with $x$, the thermopower is nearly independent of $x$. This suggests that the excess Na is unlikely to supply carriers, and decreases effecti...
9907179v1
1999-11-06
Electrical Resistivity of a Thin Metallic Film
The electrical resistivity of a pure sample of a thin metallic film is found to depend on the boundary conditions. This conclusion is supported by a free-electron model calculation and confirmed by an ab initio relativistic Korringa-Kohn-Rostoker computation. The low-temperature resistivity is found to be zero for a fr...
9911093v1
2000-03-09
On the Mooij Rule
Weak localization leads to the same correction to both the conductivity and the electron-phonon coupling constant $\lambda$ (and $\lambda_{tr}$). Consequently the temperature dependence of the (thermal) electrical resistivity is decreasing as the conductivity is decreasing due to weak localization, which results in the...
0003144v1
2001-05-04
Weak localization and the Mooij rule in disordered metals
Weak localization leads to the same correction to both the conductivity and the McMillan's electron-phonon coupling constant $\lambda$ (and $\lambda_{tr}$). Consequently the temperature dependence of the thermal electrical resistivity is decreasing as the conductivity is decreasing due to weak localization, which resul...
0105090v1
2001-10-31
Stationary Regime of Random Resistor Networks Under Biased Percolation
The state of a 2-D random resistor network, resulting from the simultaneous evolutions of two competing biased percolations, is studied in a wide range of bias values. Monte Carlo simulations show that when the external current $I$ is below the threshold value for electrical breakdown, the network reaches a steady stat...
0110646v1
2002-05-27
Resistivity and thermoelectric power measurements on CeFe$_2$ and its pseudobinaries
Resistivity and thermoelectric power (TEP) measurements on CeFe$_2$ and two of its pseudo-binaries Ce(Fe, 5% Ir)$_2$ and Ce(Fe, 7% Ru)$_2$ between 78K and 275K are reported. The resistivity data are analysed in terms of contributions from scattering due to phonon, magnon, spin fluctuation and lattice defects, and also ...
0205539v1
2003-02-12
Temperature Dependence of the Dielectric Constant and Resistivity of Diluted Magnetic Semiconductors
We study the effect that the ferromagnetic order has on the electrical properties of Diluted Magnetic Semiconductors. We analyze the temperature dependence of the dielectric constant and of the resistivity of Ga$_{1-x}$Mn$_x$As. In our treatment the electronic structure of the semiconductor is described by a six band K...
0302237v1
2003-02-19
Small-polaron hopping conductivity in bilayer manganite La$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$
We report anisotropic resistivity measurements on a La$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ single crystal over a temperature $T$ range from 2 to 400 K and in magnetic fields $H$ up to 14 T. For $T\geq 218$ K, the temperature dependence of the zero-field in-plane $\rho_{ab}(T)$ resistivity obeys the adiabatic small polaron...
0302392v1
2003-07-21
Detecting percolative metal-insulator transition in manganites by resistive relaxation
We report an experimental study of the time dependence of resistivity of a La$_{0.9}$Sr$_{0.1}$MnO$_{3}$ ultrathin film in order to elucidate the underlying mechanism for metal-insulator transition and colossal magnetoresistance CMR effect. There is a clear change of sign in the resistive relaxation rate across the met...
0307501v1
2004-11-24
Electrical Spin Injection in Multi-Wall carbon NanoTubes with transparent ferromagnetic contacts
We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $k\Omega$ at 300 $K$. The yield of device resistances below 100 $k\Omega$, at 300 $K$, is around 50%. We measure at 2 $K$ a hy...
0411623v2
2005-04-22
Possible Localization Behavior of the Inherent Conducting Polymer (CH$_3$)$_{0.9}$ReO$_3$
Polymeric methyltrioxorhenium (poly-MTO) represents the first example of an inherent conducting organometallic oxide. It adopts the structural motives and transport properties of some classical perovskites in two dimensions. In this study we present resistivity data down to 30 mK which exhibit a crossover from a metall...
0504585v1
2005-04-27
Colossal resistivity change besides magnetoresistance: an extended theoretical framework for electronic transport of manganites
Current theoretical approaches to manganites mainly stem from magnetic framework, in which the electronic transport is thought to be spin-dependent and the double exchange mechanism plays a core role. However, quite a number of experimental observations can yet not be reasonably explained. For example, multiplicate ins...
0504706v2
2006-01-31
Phase coexistence and resistivity near the ferromagnetic transition of manganites
Pairing of oxygen holes into heavy bipolarons in the paramagnetic phase and their magnetic pair-breaking in the ferromagnetic phase [the so-called current-carrier density collapse (CCDC)] has accounted for the first-order ferromagnetic phase transition, colossal magnetoresistance (CMR), isotope effect, and pseudogap in...
0601712v2
2006-02-03
Boundary resistance in magnetic multilayers
Quasiclassical boundary conditions for electrochemical potentials at the interface between diffusive ferromagnetic and non-magnetic metals are derived for the first time. An expression for the boundary resistance accurately accounts for the momentum conservation law as well as essential gradients of the chemical potent...
0602070v1
2006-06-23
Angular dependence of domain wall resistivity in artificial magnetic domain structures
We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behaviour of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and s...
0606614v1
2006-07-26
Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As
General expressions for the longitudinal and transverse resistivities of single-crystalline cubic and tetragonal ferromagnets are derived from a series expansion of the resistivity tensor with respect to the magnetization orientation. They are applied to strained (Ga,Mn)As films, grown on (001)- and (113)A-oriented GaA...
0607679v1
2006-11-14
Calculations of spin-disorder resistivity from first principles
Spin-disorder resistivity of Fe and Ni is studied using the noncollinear density functional theory. The Landauer conductance is averaged over random disorder configurations and fitted to Ohm's law. The distribution function is approximated by the mean-field theory. The dependence of spin-disorder resistivity on magneti...
0611377v2
2007-04-04
Vortex Dynamics at the Initial Stage of Resistive Transition in Superconductors with Fractal Cluster Structure
The effect of fractal normal-phase clusters on vortex dynamics in a percolative superconductor is considered. The superconductor contains percolative superconducting cluster carrying a transport current and clusters of a normal phase, acting as pinning centers. A prototype of such a structure is YBCO film, containing c...
0704.0494v1
2008-02-19
Temperature memory and resistive glassy behaviors of a perovskite manganite
This paper reports the observations of long-time relaxation, aging, and temperature memory behaviors of resistance and magnetization in the ferromagnetic state of a polycrystalline La0.7Ca0.3Mn0.925Ti0.075O3 compound. The observed glassy dynamics of the electrical transport appears to be magnetically originated and has...
0802.2729v1
2008-02-26
Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors
We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} \geq 50$ nm exhibited typical unipolar resistance memory switching, while those with $t_{BE} \leq 30$ nm showed threshold switching. This i...
0802.3739v1
2008-08-25
Stability and normal zone propagation speed in YBCO coated conductors with increased interfacial resistance
We will discuss how stability and speed of normal zone propagation in YBCO-coated conductors is affected by interfacial resistance between the superconducting film and the stabilizer. Our numerical simulation has shown that the increased interfacial resistance substantially increases speed of normal zone propagation an...
0808.3409v3
2008-12-12
Magnetic tunnel junctions with ferroelectric barriers: Prediction of four resistance states from first-principles
Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently, driven by demonstrations of ferroelectricity at the nanoscale, thin-film ferroelectri...
0812.2393v1
2008-12-23
Specific Resistance of Pd/Ir Interfaces
From measurements of the current-perpendicular-to-plane (CPP) total specific resistance (AR = area times resistance) of sputtered Pd/Ir multilayers, we derive the interface specific resistance, 2AR(Pd/Ir) = 1.02 +/- 0.06 fOhmm^2, for this metal pair with closely similar lattice parameters. Assuming a single fcc crystal...
0812.4421v1
2010-01-11
Anomalous Hall Effect in Fe/Gd Bilayers
Non-monotonic dependence of anomalous Hall resistivity on temperature and magnetization, including a sign change, was observed in Fe/Gd bilayers. To understand the intriguing observations, we fabricated the Fe/Gd bilayers and single layers of Fe and Gd simultaneously. The temperature and field dependences of longitudin...
1001.1586v2
2010-10-26
Evanescent incompressible strips as origin of the observed Hall resistance overshoot
In this work we provide a systematic explanation to the unusual non-monotonic behavior of the Hall resistance observed at two-dimensional electron systems. We use a semi-analytical model based on the interaction theory of the integer quantized Hall effect to investigate the existence of the anomalous, \emph{i.e} oversh...
1010.5432v1
2010-12-13
Distinct electronic nematicities between electron and hole underdoped iron pnictides
We systematically investigated the in-plane resistivity anisotropy of electron-underdoped $EuFe_{2-x}Co_xAs_2$ and $BaFe_{2-x}Co_xAs_2$, and hole-underdoped $Ba_{1-x}K_xFe_2As_2$. Large in-plane resistivity anisotropy was found in the former samples, while {\it tiny} in-plane resistivity anisotropy was detected in the ...
1012.2731v1
2011-01-31
Phase Mixing of Nonlinear Visco-resistive Alfvén Waves
We investigate the behaviour of nonlinear, nonideal Alfv\'en wave propagation within an inhomogeneous magnetic environment. The governing MHD equations are solved in 1D and 2D using both analytical techniques and numerical simulations. We find clear evidence for the ponderomotive effect and visco-resistive heating. The...
1101.5945v1
2011-03-04
Voltage bias induced modification of all oxide Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 junctions
In this paper we report what happens to a pristine oxide junction Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 (PCMO/Nb:STO), when it is subjected to cycling of voltage bias of moderate value ({\pm}4V). It is found that the initial cycling leads to formation of a permanent state of lower resistance where the lower resistance arises ...
1103.0884v1
2011-07-11
Magnetotransport properties of iron microwires fabricated by focused electron beam induced autocatalytic growth
We have prepared iron microwires in a combination of focused electron beam induced deposition (FEBID) and autocatalytic growth from the iron pentacarbonyl, Fe(CO)5, precursor gas under UHV conditions. The electrical transport properties of the microwires were investigated and it was found that the temperature dependenc...
1107.2014v1
2011-08-11
Effect of Electron-electron Interaction on Surface Transport in Three-Dimensional Topological Insulators
We study the effect of electron-electron interaction on the surface resistivity of three-dimensional (3D) topological insulators. In the absence of umklapp scattering, the existence of the Fermi-liquid ($T^2$) term in resistivity of a two-dimensional (2D) metal depends on the Fermi surface geometry, in particular, on w...
1108.2435v1
2011-10-31
Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the effect disappears. We observe minimum resistance in the antiparallel configurati...
1110.6810v1
2012-08-22
Why is the bulk resistivity of topological insulators so small?
As-grown topological insulators (TIs) are typically heavily-doped $n$-type crystals. Compensation by acceptors is used to move the Fermi level to the middle of the band gap, but even then TIs have a frustratingly small bulk resistivity. We show that this small resistivity is the result of band bending by poorly screene...
1208.4601v2
2012-09-26
Substrate effect on the resistive switching in BiFeO3 thin films
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not ...
1209.5868v1
2012-10-22
Thickness-dependent structural, magnetic and transport properties of epitaxial Co2FeAl Heusler alloy thin films
We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co2FeAl (CFA) epitaxial films on MgO(001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotrop...
1210.5807v1
2012-12-06
Barkhausen-type noise in the resistance of antiferromagnetic Cr thin films
We present an experimental study of the changes generated on the electrical resistance $R(T)$ of epitaxial Cr thin films by the transformation of quantized spin density wave domains as the temperature is changed. A characteristic resistance noise appears only within the same temperature region where a cooling-warming c...
1212.1411v1
2012-12-10
YCr6Ge6 as a Candidate Compound for a Kagome Metal
We show that YCr6Ge6, comprising a kagome lattice made up of Cr atoms, is a plausible candidate compound for a kagome metal that is expected to exhibit anomalous phenomena such as flat-band ferromagnetism. Resistivity, magnetization, and heat capacity are measured on single crystals of YCr6Ge6, and band structure calcu...
1212.1976v1
2013-03-26
Quantum corrections to conductivity in Si doped ZnO thin films
Si doped ZnO thin films with Si concentrations ranging from 0.4 to 10 % have been grown by sequential pulsed laser deposition on sapphire substrates. The resistivity of the films first decreased from ~ 6.6x10-3 to 4.7x10-4 ohm-cm as the Si concentration was increased from ~ 0.4 to 2% and then it increased with further ...
1303.6443v2
2013-08-29
Percolation model for a selective response of the resistance of composite semiconducting np-systems towards reducing gases
It is shown that a two-component percolation model can explain an experimentally observed behavior, namely that a network built up by a mixture of sintered nanocrystalline semiconducting n- and p-grains can exhibit selective behavior, i.e. respond with a resistance increase when exposed to a reducing gas A and with a r...
1308.6442v2
2013-11-08
Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts
The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a process of metal-catalyzed etching in hydrogen, multiple nano-sized pits with zigza...
1311.1944v2
2014-06-14
Negative magnetoresistance dynamics in expanded graphite under hydrostatic pressure up to 1.8 GPa
Basal plane resistivity of expanded graphite was studied under simultaneous influence of hydrostatic pressure up to 1.8 GPa and magnetic field 0.8 T in the 77-300 K temperature region. Magnetic field induces negative magnetoresistance in the sample within all temperature and pressure range studied. A change in resistiv...
1406.3770v1
2014-06-23
Control of Thermoelectric Properties of ZnO using Electric Double Layer
We have successfully controlled thermoelectric properties of ZnO by changing carrier concentration using an electric double layer transistor (EDLT) which is a feld effect transistor gated by electrolyte solution. The resistivity and the thermopower decreased abruptly by applying gate voltage larger than a threshold vol...
1406.5850v1
2014-09-28
Universal Ratio of Intrinsic Resistivities of Spin Helix in B20 (Fe-Co)Si Magnets
The B20 magnets with the Dzyaloshinskii-Moriya (D-M) interaction exhibit spin helix and Skyrmion spin textures unattainable in traditional Heisenberg ferromagnets. We have determined the intrinsic resistivity of the spin helix, which is a macroscopic Bloch domain wall, in B20 (Fe-Co)Si magnets. We found a universal res...
1409.7869v1
2014-11-13
Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics
We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nic...
1411.3476v1
2014-11-22
Crystal growth, resistivity and Hall effect of the delafossite metal PtCoO$_2$
We report single crystal growth of the delafossite oxide PtCoO$_2$, and basic transport measurements on single crystals etched to well-defined geometries using focused ion beam techniques. The room temperature resistivity is 2.1 $\mu\Omega$ cm, and the Hall coefficient is consistent with the existence of one free elect...
1411.6162v2
2015-03-02
High-Q operation of SRF cavities: The potential impact of thermocurrents on the RF surface resistance
For many new accelerator applications, superconducting radio frequency (SRF) systems are the enabling technology. In particular for CW applications, much effort is being expended to minimize the power dissipation (surface resistance) of niobium cavities. Starting in 2009, we suggested a means of reducing the residual r...
1503.00601v2
2015-05-28
Effect of the interface resistance in non-local Hanle measurements
We use lateral spin valves with varying interface resistance to measure non-local Hanle effect in order to extract the spin-diffusion length of the non-magnetic channel. A general expression that describes spin injection and transport, taking into account the influence of the interface resistance, is used to fit our re...
1505.07592v1
2016-01-25
Lower limits of line resistance in nanocrystalline Back End of Line Cu interconnects
The strong non-linear increase in Cu interconnect line resistance with a decrease in linewidth presents a significant obstacle to their continued downscaling. In this letter we use first principles density functional theory based electronic structure of Cu interconnects to find the lower limits of their line resistance...
1601.06675v2
2016-05-12
NdCeCuO - NdCeO boundary and resistive switchings in mesoscopic structures on base of epitaxial NdCeCuO films
Reverse and stable bipolar resistive switching effect was observed in planar NdCeCuO - NdCeO - Ag heterostructures. It was shown that the current voltage charactereriscs of the BRSE observed has a diode character. Simulations were used to consider the influence of the nonuniform distribution of an electric field at the...
1605.03913v1
2016-08-25
Resistive Switching in Aqueous Nanopores by Shock Electrodeposition
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state metallization cells could offer the same advantages for aqueous systems, such as biomedi...
1608.07007v1
2017-02-17
An alternative to the spin-coupled interface resistance for describing heat generation
Using a macroscopic approach, we studied theoretically the heat generation in a typical spin valve with nonmagnetic spacer layer of finite thickness. Our analysis shows that the spin-dependent heat generation cannot be interpreted as the Joule heating of the spin-coupled interface resistance except for some special seg...
1702.05283v1
2017-09-27
Kapitza thermal resistance across individual grain boundaries in graphene
We study heat transport across individual grain boundaries in suspended monolayer graphene using extensive classical molecular dynamics (MD) simulations. We construct bicrystalline graphene samples containing grain boundaries with symmetric tilt angles using the two-dimensional phase field crystal method and then relax...
1709.09529v1
2017-12-08
A Novel Effect of Electron Spin Resonance on Electrical Resistivity
We extend the well known phenomenon of magnetoresistance (extra resistivity of materials in transverse magnetic field) to a new and unexplored regime where in addition to a transverse magnetic field, a transverse AC field of resonant frequency is also applied. In a magnetic field, electron spin levels are Zeeman split....
1712.03062v1
2017-12-11
Finite Size Effects in Highly Scaled Ruthenium Interconnects
Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits. Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the dependence of the Ru thin film resistivity on the film thickness is modeled by the semiclassical Mayadas-Shatzkes (MS) approach. The fitting...
1712.03859v2
2017-12-23
A micromechanics-based analytical solution for the effective thermal conductivity of composites with orthotropic matrices and interfacial thermal resistance
We obtained an analytical solution for the effective thermal conductivity of composites composed of orthotropic matrices and spherical inhomogeneities with interfacial thermal resistance using a micromechanics-based homogenization. We derived the closed form of a modified Eshelby tensor as a function of the interfacial...
1712.08715v2
2019-09-06
Strong suppression of the resistivity near the transition to superconductivity in narrow micro-bridges in external magnetic fields
We have investigated a series of superconducting bridges based on homogeneous amorphous WSi and MoSi films, with bridge widths w ranging from 2 um to 1000 um and film thicknesses d ~ 4-6 nm and 100 nm. Upon decreasing the bridge widths below the respective Pearl lengths, we observe in all cases distinct changes in the ...
1909.02915v2
2019-09-13
Tunable resistivity exponents in the metallic phase of epitaxial nickelates
We report a detailed analysis of the electrical resistivity exponent of thin films of NdNiO3 as a function of epitaxial strain. Strain-free thin-films show a linear dependence of the resistivity vs temperature, consistent with a classical Fermi gas ruled by electron-phonon interactions. In addition, the apparent temper...
1909.06256v1
2014-08-08
Effects of Lifshitz Transition on Charge Transport in Magnetic Phases of Fe-Based Superconductors
The unusual temperature dependence of the resistivity and its in-plane anisotropy observed in the Fe-based superconducting materials, particularly Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, has been a longstanding puzzle. Here we consider the effect of impurity scattering on the temperature dependence of the average resistivity w...
1408.1933v3
2019-07-01
A perspective on effective medium models of thermal conductivity in (ultra)nanocrystalline diamond films
Thermal conductivity of nanocrystalline and ultra-nanocrystalline films is analyzed with effective medium theory (EMT) models. The existing EMT models use the spherical inclusion approximation. Although this approximation works quite well it is inconsistent, mostly with respect to the maximal packing of 74{\%}, which m...
1907.00753v1
2016-03-02
Giant Frictional Drag in Double Bilayer Graphene Heterostructures
We study the frictional drag between carriers in two bilayer graphene flakes separated by a 2 $-$ 5 nm thick hexagonal boron nitride dielectric. At temperatures ($T$) lower than $\sim$ 10 K, we observe a large anomalous negative drag emerging predominantly near the drag layer charge neutrality. The anomalous drag resis...
1603.00757v1
2017-04-05
Stateful characterization of resistive switching TiO2 with electron beam induced currents
Metal oxide resistive switches are increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam induced current measurements as a powerful method to...
1704.01475v2
2017-08-31
Antiferromagnetic anisotropy determination by spin Hall magnetoresistance
An electric method for measuring magnetic anisotropy in antiferromagnetic insulators (AFIs) is proposed. When a metallic film with strong spin-orbit interactions, e.g., platinum (Pt), is deposited on an AFI, its resistance should be affected by the direction of the AFI N eel vector due to the spin Hall magnetoresistanc...
1708.09564v1
2019-08-12
Graphene-based spinmechatronic valve
Interlayer twist between van der Waals graphene crystals led to the discovery of superconducting and insulating states near the magic angle. In this work, we exploit this mechanical degree of freedom by twisting the graphene middle layer in a trilayer graphene spacer between two metallic lead (Magnetic and nonmagnetic)...
1908.04076v1
2019-08-15
Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K)
In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential resistance effects between 130 and 1.5 K, attributed to a metal-insulator transi...
1908.05545v4
2018-07-28
Anomalous Hall Effect and Spin Fluctuations in Ionic Liquid Gated SrCoO$_3$ Thin Films
The recent realization of epitaxial SrCoO$_3$ thin films has triggered a renewed interest in their electronic, magnetic, and ionic properties. Here we uncover several unusual magneto-transport properties of this compound, suggesting that it hosts persistent spin fluctuation down to low temperatures. We achieve the meta...
1807.10877v1
2019-01-14
Phonon and electronic structures and resistance of layered electride Ca2N: DFT calculations
The phonon and electronic properties, the Eliashberg function and the temperature dependence of resistance of electride Ca2N are investigated by the DFT-LDA plane-wave method. The phonon dispersion, the partial phonon density of states and the atomic eigenvectors of zero-center phonons are studied. The electronic band ...
1901.04594v1
2020-05-22
VoteAgain: A scalable coercion-resistant voting system
The strongest threat model for voting systems considers coercion resistance: protection against coercers that force voters to modify their votes, or to abstain. Existing remote voting systems either do not provide this property; require an expensive tallying phase; or burden users with the need to store cryptographic k...
2005.11189v3
2020-06-06
Radiative Resistance at The Nano-scale: Thermal Barrier
In present article the radiative thermal current and radiative resistance are introduced and investigated in a system of parallel slabs. The system is placed in an environment with a constant temperature and subjected to a constant temperature gradient, which causes a radiative energy flux through the system. We have c...
2006.03842v4
2020-08-16
Strange metal behavior of the Hall angle in twisted bilayer graphene
Twisted bilayer graphene (TBG) with interlayer twist angles near the magic angle $\approx 1.08^{\circ}$ hosts flat bands and exhibits correlated states including Mott-like insulators, superconductivity and magnetism. Here we report combined temperature-dependent transport measurements of the longitudinal and Hall resis...
2008.06907v1
2020-08-23
Negative resistance state in superconducting NbSe$_2$ induced by surface acoustic waves
We report a negative resistance, namely, a voltage drop along the opposite direction of a current flow, in the superconducting gap of NbSe$_2$ thin films under the irradiation of surface acoustic waves (SAWs). The amplitude of the negative resistance becomes larger by increasing the SAW power and decreasing temperature...
2008.09948v1
2020-11-17
Effect of Substrate Roughness on Oxidation Resistance of an Aluminized Ni-Base Superalloy
In the present work, it is shown that the surface preparation method used on two Ni-based superalloys prior to aluminizing chemical vapor deposition (CVD) is one of the most important factors determining the oxidation resistance of aluminized Ni-based superalloys. It was found that grit blasting the substrate surface n...
2011.08921v1
2021-04-23
Microstructure and wear resistance of Fe-Cr-C-Mo-V-Ti-N hardfacing layers
In this paper, to improve wear resistance of components such as screws under severe friction-wear, Fe-Cr-C-Mo-V-Ti-N hardfacing coatings were further developed. The hardfacing coatings were acquired by shielded manual arc welding (SMAW) method. The ferroalloys added into the coating flux of the hardfaced electrode were...
2104.11402v1
2021-05-27
Systematic manipulation of the surface conductivity of SmB$_6$
We show that the resistivity plateau of SmB$_6$ at low temperature, typically taken as a hallmark of its conducting surface state, can systematically be influenced by different surface treatments. We investigate the effect of inflicting an increasing number of hand-made scratches and microscopically defined focused ion...
2105.13057v1
2021-06-23
A new symmetry-based extraction method of Schottky diode parameters from resistance-compensated I-V characteristics
We present a novel resistance-compensated I-V method to extract the series resistance, ideality factor, barrier height and built-in potential of a metal-semiconductor diode. We show that a reduced equation arises from a unique but hitherto unreported symmetry in the Schottky equation when it is written as an ordinary d...
2106.12324v1
2021-08-19
Influence of charged walls and defects on DC resistivity and dielectric relaxation in Cu-Cl boracite
Charged domain walls form spontaneously in Cu-Cl boracite on cooling through the phase transition. These walls exhibit changed conductivity compared to the bulk and motion consistent with the existence of negative capacitance. Here, we present the dielectric permittivity and DC resistivity of bulk Cu-Cl boracite as a f...
2108.08582v2
2022-01-10
Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-...
2201.03621v1