publicationDate
stringlengths
10
10
title
stringlengths
17
233
abstract
stringlengths
20
3.22k
id
stringlengths
9
12
2019-05-04
Pressure enhanced interplay among lattice, spin and charge in La2FeMnO6 mixed perovskite
Spin crossover plays a central role in the structural instability, net magnetic moment modification, metallization, and even in superconductivity in corresponding materials. Most reports on the pressure-induced spin crossover with a large volume collapse so far focused on compounds with single transition metal. Here we...
1905.01521v1
2012-03-16
Development and preliminary tests of resistive microdot and microstrip detectors
In the last few years our group have focused on developing various designs of spark-protected micropattern gaseous detectors featuring resistive electrodes instead of the traditional metallic ones: resistive microstrip counters, resistive GEM, resistive MICROMEGAS. These detectors combine in one design the best feature...
1203.3658v2
2022-10-25
Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5
We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop within a few minutes with application of high electric field stresses. The acceleration of drift is clearly observable at electric fields > 2...
2210.14035v1
2013-07-08
5d transition metal oxide IrO2 as a material for spin current detection
Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an electric detection of spin current is essential. Inverse spin Hall effect converts...
1307.2121v1
2018-10-31
Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing
This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxides materials, which exhibit unique properties...
1812.01120v1
2023-01-25
$T-$linear resistivity from magneto-elastic scattering: application to PdCrO$_2$
An electronic solid with itinerant carriers and localized magnetic moments represents a paradigmatic strongly correlated system. The electrical transport properties associated with the itinerant carriers, as they scatter off these local moments, has been scrutinized across a number of materials. Here we analyze the tra...
2301.10776v2
2011-11-14
Nanostructuring of Ba8Ga16Ge30 clathrates
First thermoelectric properties measurements on bulk nanostructured Ba8Ga16Ge30 clathrate-I are presented. A sol-gel-calcination route was developed for preparing amorphous nanosized precursor oxides. The further reduction of the oxides led to quantitative yield of crystalline nanosized Ba8Ga16Ge30 clathrate-I. TEM inv...
1111.3233v1
2013-02-10
Synthesis and properties of charge-ordered thallium halide perovskites, CsTl1+0.5Tl3+0.5X3 (X = F, Cl)- theoretical precursors for superconductivity?
Recently CsTlCl3 and CsTlF3 perovskites were theoretically predicted to be potential superconductors if they are optimally doped. The synthesis of these two compounds, together with a complete characterization of the samples are reported. CsTlCl3 is obtained as orange crystals in two different polymorphs: a tetragonal ...
1302.2353v3
2021-03-28
Radiation-tolerant high-entropy alloys via interstitial-solute-induced chemical heterogeneities
High-entropy alloys (HEAs) composed of multiple principal elements have been shown to offer improved radiation resistance over their elemental or dilute-solution counterparts. Using NiCoFeCrMn HEA as a model, here we introduce carbon and nitrogen interstitial alloying elements to impart chemical heterogeneities in the ...
2103.15134v1
2024-01-21
Hydrostatic pressure effect on structural and transport properties of co-existing layered and disordered rock-salt phase of LixCoO2
It is widely believed that the origin of a significant cause for the voltage and capacity fading observed in lithium (Li)-ion batteries is related to structural modifications occurring in the cathode material during the Li-ion insertion/de-insertion process. The Li-ion insertion/de-insertion mechanism and the resulting...
2401.11446v1
2017-01-18
Intermittent Preventive Treatment (IPT): Its role in averting disease-induced mortalities in children and in promoting the spread of antimalarial drug resistance
We develop a variable population age-structured ODE model to investigate the role of Intermittent Preventive Treatment (IPT) in averting malaria-induced mortalities in children, as well as its related cost in promoting the spread of anti-malarial drug resistance. IPT, a malaria control strategy in which a full curative...
1701.05210v1
2019-12-22
Bulk Polycrystalline Ceria Doped Al$_2$O$_3$ and YAG Ceramics for High-Power Density Laser-Driven Solid-State White Lighting: Effects of Crystallinity and Extreme Temperatures
Here we develop and characterize high thermal conductivity/high thermal shock resistant bulk Ce doped Al2O3 and propose it as a new phosphor converting capping layer for high-powered/high-brightness solid-state white lighting (SSWL). The bulk, dense Ce:Al2O3 ceramics have a 0.5 at.% Ce:Al concentration (significantly h...
1912.10393v1
1992-08-05
Transport Properties of the Infinite Dimensional Hubbard Model
Results for the optical conductivity and resistivity of the Hubbard model in infinite spatial dimensions are presented. At half filling we observe a gradual crossover from a normal Fermi-liquid with a Drude peak at $\omega=0$ in the optical conductivity to an insulator as a function of $U$ for temperatures above the an...
9208002v1
1997-12-05
Spin flip scattering in magnetic junctions
Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance, which saturates at low temperatures. The conductance increases at high fields. ii...
9712075v1
1998-12-14
Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers
We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the $0 - 5$K temperature range, with the...
9812216v3
2000-02-17
Strong, Ultra-narrow Peaks of Longitudinal and Hall Resistances in the Regime of Breakdown of the Quantum Hall Effect
With unusually slow and high-resolution sweeps of magnetic field, strong, ultra-narrow (width down to $100 {\rm \mu T}$) resistance peaks are observed in the regime of breakdown of the quantum Hall effect. The peaks are dependent on the directions and even the history of magnetic field sweeps, indicating the involvemen...
0002267v1
2001-03-28
Microwave Surface Resistance in MgB2
Measurements of the temperature dependence of the surface resistance at 3 GHz of 100 micron size grains of MgB_2 separated powder are presented and discussed. The microwave surface resistance data is compared to experimental results of Nb, Bi_2Sr_2CaCu_2O_{8+\delta} (BSCCO) and theoretical predictions of s-wave weak co...
0103587v2
2002-10-17
Origin of superconductivity transition broadening in MgB2
We report resistivity and magnetization of single crystal MgB2, focusing on the broadening of superconducting (SC) transition in magnetic fields. In-plane and out-of-plane resistivity indicate that the broadening of superconducting transition is independent of Lorentz force and that it is merely dependent on the magnet...
0210358v1
2003-03-07
Drift plasma instability near the edge as the origin of the microwave-induced zero-resistance states
We discuss a possible origin of the recently discovered microwave-induced zero-resistance states in very-high-electron-mobility two-dimensional electron systems. We suggest a scenario, in which two mechanisms, bulk and edge, contribute to the measured photosignal. Zero-resistance states are assumed to be due to a drift...
0303130v1
2003-04-22
Upper critical fields of MgB2 thin films
Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 mWcm and Tc from 29.5 to 38.8 K were measured up to 28 T. Hc2(T) curves present a linear behavior towards low temperatures. Very high critical field values have been found, up to 24 T along the c-axis and 57 T in the basal plan...
0304478v1
2004-07-14
Zero-Resistance States Induced by Electromagnetic-Wave Excitation in GaAs/AlGaAs Heterostructures
We report the detection of novel zero-resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices, at low magnetic fields, $B$, in the large filling factor limit. Vanishing resistance is observed in the vicinity of $B = [4/(4j+1)] B_{f}$, where $B_{f} = 2\pi\t...
0407367v1
2006-04-03
Pulsed versus DC I-V characteristics of resistive manganites
We report on pulsed and DC I-V characteristics of polycrystalline samples of three charge-ordered manganites, Pr_{2/3}Ca_{1/3}MnO_3, Pr_{1/2}Ca_{1/2}MnO_3, Bi_{1/2}Sr_{1/2}MnO_3 and of a double-perovskite Sr_2MnReO_6, in a temperature range where their ohmic resistivity obeys the Efros-Shklovskii variable range hopping...
0604049v1
2006-06-13
Peculiar behavior of the electrical resistivity of MnSi at the ferromagnetic phase transition
The electrical resistivity of a single crystal of MnSi was measured across its ferromagnetic phase transition line at ambient and high pressures. Sharp peaks of the temperature coefficient of resistivity characterize the transition line. Analysis of these data shows that at pressures to ~0.35 GPa these peaks have fine ...
0606324v1
2006-10-23
Microwave induced negative resistance states in 2D electron gas with periodic modulation
We study the microwave-induced photoconductivity of a two-dimensional electron system (2DES) in the presence of a magnetic field and a two-dimensional modulation. The microwave and Landau contributions are exactly taken into account, while the periodic potential is treated perturbatively. The longitudinal resistivity e...
0610643v1
2002-09-10
Evolution of Electrical Resistivity, Thermal Conductivity, and Temperature of a solid under the action of Intense Ultrashort Laser pulse
The dynamical properties of Cu in a regime relevant to femtosecond micro machining are obtained on picosecond time scales using pump-probe reflectivity study for 100fs, 1015 W cm-2 laser pulses. The electrical resistivity is obtained by solving Helmoltz equations. The dissipation mechanisms and scaling laws are obtaine...
0209037v1
1996-07-12
Flux flow resistivity and vortex viscosity of high-Tc films
The flux flow regime of high-T$_{\rm c}$ samples of different normal state resistivities is studied in the temperature range where the sign of the Hall effect is reversed. The scaling of the vortex viscosity with normal state resistivity is consistent with the Bardeen-Stephen theory. Estimates of the influence of possi...
9607003v1
2007-05-15
Excitation of MHD waves in magnetized anisotropic cosmologies
The excitation of cosmological perturbations in an anisotropic cosmological model and in the presence of a homogeneous magnetic field was studied, using the resistive magnetohydrodynamic (MHD) equations. We have shown that fast-magnetosonic modes, propagating normal to the magnetic field grow exponentially and saturate...
0705.2194v1
2007-12-10
Non-local electron transport and cross-resistance peak in NSN heterostructures
We develop a microscopic theory describing the peak in the temperature dependence of the non-local resistance of three-terminal NSN devices. This peak emerges at sufficiently high temperatures as a result of a competition between quasiparticle/charge imbalance and subgap (Andreev) contributions to the conductance matri...
0712.1408v1
2008-10-08
Pressure-induced superconductivity in Iron pnictide compound SrFe2As2
Electrical resistivity under high pressure have been measured on nominally pure SrFe2As2 up to 14 GPa. The resistivity drop appeared with increasing pressure, and we clearly observed zero resistivity. The maximum of superconducting transition temperature (Tc) is 38 K. The value is corresponding to the one of optimally ...
0810.1377v1
2010-12-13
Role of domain wall fluctuations in non-Fermi liquid behavior of metamagnets
We study resistivity temperature dependence of a three dimensional metamagnet near the metamagnet phase transition point in the case when magnetic structure tends to split into regions with high and low magnetization. We show that in the case of weak pinning the spin relaxation time of domain wall is much larger than t...
1012.2617v2
2011-09-04
Phase diffusion in graphene-based Josephson junctions
We report on graphene-based Josephson junctions with contacts made from lead. The high transition temperature of this superconductor allows us to observe the supercurrent branch at temperatures up to $\sim 2$ K, at which point we can detect a small, but non-zero, resistance. We attribute this resistance to the phase di...
1109.0769v1
2012-12-01
Modeling magnetized neutron stars using resistive MHD
This work presents an implementation of the resistive MHD equations for a generic algebraic Ohm's law which includes the effects of finite resistivity within full General Relativity. The implementation naturally accounts for magnetic-field-induced anisotropies and, by adopting a phenomenological current, is able to acc...
1212.0130v1
2013-06-29
On the beneficial role of noise in resistive switching
We study the effect of external noise on resistive switching. Experimental results on a manganite sample are presented showing that there is an optimal noise amplitude that maximizes the contrast between high and low resistive states. By means of numerical simulations, we study the causes underlying the observed behavi...
1307.0143v1
2015-01-22
Tests of a Novel Design of Resistive Plate Chambers
A novel design of Resistive Plate Chambers (RPCs), using only a single resistive plate, is being proposed. Based on this design, two large size prototype chambers were constructed and were tested with cosmic rays and in particle beams. The tests confirmed the viability of this new approach. In addition to showing an im...
1501.05907v2
2015-10-12
Radiation-assisted magnetotransport in two-dimensional electron gas systems: appearance of zero resistance states
Zero-Resistance States (ZRS) are normally associated with superconducting and quantum Hall phases. Experimental detection of ZRS in two-dimensional electron gas (2DEG) systems irridiated by microwave(MW) radiation in a magnetic field has been quite a surprise. We develop a semiclassical transport formalism to explain t...
1510.03187v1
2016-06-27
Characterization of Methicillin-resistant Staphylococcus aureus Isolates from Fitness Centers in Memphis Metropolitan Area, USA
Indoor skin-contact surfaces of public fitness centers may serve as reservoirs of potential human transmission of methicillin-resistant Staphylococcus aureus (MRSA). We found a high prevalence of multi-drug resistant (MDR)-MRSA of CC59 lineage harboring a variety of extracellular toxin genes from surface swab samples c...
1606.08377v1
2017-08-18
Map-based cloning of the gene Pm21 that confers broad spectrum resistance to wheat powdery mildew
Common wheat (Triticum aestivum L.) is one of the most important cereal crops. Wheat powdery mildew caused by Blumeria graminis f. sp. tritici (Bgt) is a continuing threat to wheat production. The Pm21 gene, originating from Dasypyrum villosum, confers high resistance to all known Bgt races and has been widely applied ...
1708.05475v1
2021-04-27
Unified description of resistivity and thermopower of Pr$_2$Ir$_2$O$_7$: possible influence of crystal field excitation in a Kondo lattice
We present experimental evidence of incoherent Kondo scattering as the source of resistivity minima in bulk polycrystalline and nanocrystalline Pr$_2$Ir$_2$O$_7$. The temperature dependence of thermopower shows a positive maximum at high temperature followed by a negative minimum at low temperature, with the sign inver...
2105.05149v1
2022-05-03
On the problem of projectile motion in a medium with quadratic resistance
A classic problem of the motion of a projectile thrown at an angle to the horizon in a medium with a quadratic resistance law is studied. An approximate analytical solution of the equations of projectile motion is presented, which has a high accuracy. The proposed formulas are universal, that is, they can be used for a...
2205.01564v1
2013-08-15
Structural and optical investigations of the iron-chalcogenide superconductor Fe$_{1.03}$Se$_{0.5}$Te$_{0.5}$ under high pressure
Iron-chalcogenide superconductor Fe$_{1.03}$Se$_{0.5}$Te$_{0.5}$ has been investigated under high pressure using synchrotron based x-ray diffraction and mid-infrared reflectance measurements at room temperature. Pressure dependence of the superconducting transition temperature (T$_c$) of the same sample has been determ...
1308.3367v1
2016-07-11
High pressure studies on properties of FeGa3: role of on-site coulomb correlation
High pressure X-ray diffraction measurements have been carried out on the intermetallic semiconductor FeGa$_3$ and the equation of state for FeGa$_3$ has been determined. First principles based DFT calculations within the GGA approximation indicate that although the unit cell volume matches well with the experimentally...
1607.02905v2
2016-10-24
Deep Reactive Ion Etched Anti-Reflection Coatings for Sub-millimeter Silicon Optics
Refractive optical elements are widely used in millimeter and sub-millimeter astronomical telescopes. High resistivity silicon is an excellent material for dielectric lenses given its low loss-tangent, high thermal conductivity and high index of refraction. The high index of refraction of silicon causes a large Fresnel...
1610.07655v1
2020-03-09
CACTUS: A depleted monolithic active timing sensor using a CMOS radiation hard technology
The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The required time resolution is of the order of tens of picoseconds, with a spatial g...
2003.04102v4
2019-02-23
Pixel detector R&D for the Compact Linear Collider
The physics aims at the proposed future CLIC high-energy linear $e^+ e^-$ collider pose challenging demands on the performance of the detector system. In particular the vertex and tracking detectors have to combine precision measurements with robustness against the expected high rates of beam-induced backgrounds. A spa...
1902.08752v4
2017-05-30
Structural evolution of CO2 filled pure silica LTA zeolite under high-pressure high-temperature conditions
The crystal structure of CO2 filled pure SiO2 LTA zeolite has been studied at high pressures and temperatures using synchrotron based x ray powder diffraction. Its structure consists of 13 CO2 guest molecules, 12 of them accommodated in the large alpha cages and 1 in the beta cages, giving a SiO2:CO2 stoichiometric rat...
1705.10507v1
2018-08-22
Record-High Superconductivity in Niobium-Titanium Alloy
Here we report the observation of extraordinary superconductivity in a pressurized commercial niobium-titanium alloy. We find that its zero-resistance superconductivity persists from ambient pressure to the pressure as high as 261.7 GPa, a record high pressure up to which a known superconducting state can continuously ...
1808.07215v3
2022-09-02
Ultra-Low Temperature Li/CFx Batteries Enabled by Fast-transport and Anion-pairing Liquefied Gas Electrolytes
Lithium fluorinated carbon is one of the most promising chemistries for high-energy-density primary energy storage systems in applications where rechargeability is not required. Though Li/CFx demonstrates high energy density under ambient conditions, achieving such a high energy density when exposed to subzero temperat...
2209.02409v1
2023-03-09
Superconductivity above 70 K observed in lutetium polyhydrides
The binary polyhydrides of heavy rare earth lutetium that shares a similar valence electron configuration to lanthanum have been experimentally discovered to be superconductive. The lutetium polyhydrides were successfully synthesized at high pressure and high temperature conditions using a diamond anvil cell in combina...
2303.05117v3
2023-04-04
Ultrathin Stable Ohmic Contacts for High-Temperature Operation of $β$-Ga$_2$O$_3$ Devices
Beta gallium oxide ($\beta$-Ga$_2$O$_3$) shows significant promise in the high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperature present unique thermodynamic challenges. The current most common Ohmic contact design based ...
2304.02161v1
2023-07-31
Coexistence of Superconductivity and ferromagnetism in high entropy carbide ceramics
Generally, the superconductivity was expected to be absent in magnetic systems, but this reception was disturbed by unconventional superconductors, such as cuprates, iron-based superconductors and recently discovered nickelate, since their superconductivity is proposed to be related to the electron-electron interaction...
2307.16438v1
2023-09-09
High-speed metasurface modulator using critically coupled bimodal plasmonic resonance
Free-space electro-optic (EO) modulators operating at gigahertz and beyond are attractive for a wide range of emerging applications, including high-speed imaging, free-space optical communication, microwave photonics, and diffractive computing. Here we experimentally demonstrate a high-speed plasmonic metasurface EO mo...
2309.04835v1
2000-07-10
Comment on "Microwave vortex dissipation of superconducting Nd-Ce-Cu-O epitaxial films in high magnetic fields"
While the electrodynamic treatment of a superconducting thin film by Yeh et al. [Phys. Rev. B 48, 9861 (1993)] ostensibly has application for the "thin-film limit," their work is shown to employ bulk-like instead of thin-film electrodynamics, and as such obtains an ostensible violation of the first law of thermodynamic...
0007167v1
2000-10-27
Negative differential resistance in nanotube devices
Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-...
0010456v1
2002-05-20
Resistive Transition Equation of Mixed State
We present a microscopic derivation of the resistive transition equation for mixed state of superconductors. This form fits the experimental data of MgB2 with parameters in agreement with the prediction of BCS superconductivity. It also fits the experimental data of high quality untwined YBCO single crystal but with pa...
0205407v1
2005-04-08
Photo-excited zero-resistance states in the GaAs/AlGaAs system
The microwave-excited high mobility two-dimensional electron system exhibits, at liquid helium temperatures, vanishing resistance in the vicinity of $B = [4/(4j+1)] B_{f}$, where $B_{f} = 2\pi\textit{f}m^{*}/e$, m$^{*}$ is an effective mass, e is the charge, and \textit{f} is the microwave frequency. Here, we summarize...
0504206v1
2009-12-09
2-D MHD Configurations for Accretion Disks Around Magnetized Stars
We discuss basic features of steady accretion disk morphology around magnetized compact astrophysical objects. A comparison between the standard model of accretion based on visco-resistive MHD and the plasma instabilities, like ballooning modes, triggered by very low value of resistivity, is proposed.
0912.1721v1
2021-06-18
The effect of viscosity and resistivity on Rayleigh-Taylor instability induced mixing in magnetized high energy density plasmas
This work numerically investigates the role of viscosity and resistivity on Rayleigh-Taylor instabilities in magnetized high-energy-density (HED) plasmas for a high Atwood number and high plasma beta regimes surveying across plasma beta and magnetic Prandtl numbers. The numerical simulations are performed using the vis...
2106.10391v2
2003-03-20
Current-induced phase control in charged-ordered Nd0.5Ca0.5MnO3 and Pr0.6Ca0.4MnO3 crystals
Single crystals of Nd0.5Ca0.5MnO3 and Pr0.6Ca0.4MnO3 show current-induced insulator-metal transitions at low temperatures. In addition, the charge-ordering transition temperature decreases with increasing current. The electroresistive ratio, defined as r0.5/rI where r0.5 is the resistivity at a current of 0.5 mA and rI...
0303407v1
2003-07-22
Temperature Dependence of Resistivity of $Sr_2CoMoO_{6-δ}$ Films
We investigate the temperature dependence of the resistivity and magnetoresistance of a polycrystalline $Sr_2CoMoO_{6-\delta}$ film deposited on (100)-$SrTiO_3$ substrate prepared by the pulsed laser deposition method. X-ray diffraction, Raman and magnetoresistance results demonstrate clearly the coexistence of a ferro...
0307527v2
2005-02-13
Transport properties in correlated systems: An analytical model
Several studies have so far investigated transport properties of strongly correlated systems. Interesting features of these materials are the lack of resistivity saturation well beyond the Mott-Ioffe-Regel limit and the scaling of the resistivity with the hole density in underdoped cuprates. Due to the strongly correla...
0502297v3
2005-08-05
Is ZrB12 two gap superconductor?
We report the measurements of the temperature dependence of the resistivity, \rho(T), magnetic penetration depth,\lambda(T) the lower, Hc1(T), and upper, Hc2(T), critical magnetic fields, for single crystals of dodecaboride ZrB12, diboride ZrB2 and thin films of diboride MgB2. We observe a number of deviations from con...
0508151v2
2005-10-05
Equipartition of Current in Parallel Conductors on Cooling Through the Superconducting Transition
Our experiments show that for two or more pieces of a wire, of different lengths in general, combined in parallel and connected to a dc source, the current ratio evolves towards unity as the combination is cooled to the superconducting transition temperature Tc, and remains pinned at that value below it. This re-distri...
0510099v3
2006-04-06
Giant magneto-impedance in Ag-doped La0.7Sr0.3MnO3
The resistive and reactive parts of the magneto-impedance of sintered ferromagnetic samples of La0.7Sr0.3-xAgxMnO3 (x = 0.05, 0.25) have been measured at room temperature (<Tc) over frequency interval 1KHz to 15MHz and in presence of magnetic field up to 4KOe. The field dependence of relative change in resistance is sm...
0604181v3
2007-09-12
Thermal Design of Power Semiconductor Modules for Mobile Communication Systems
We will describe the thermal performance of power semiconductor module, which consists of hetero-junction bipolar transistors (HBTs), for mobile communication systems. We calculate the thermal resistance between the HBT fingers and the bottom surface of a multi-layer printed circuit board (PCB) using a finite element m...
0709.1879v1
2007-09-26
Influence of Zeeman splitting and thermally excited polaron states on magneto-electrical and magneto-thermal properties of magnetoresistive polycrystalline manganite La_{0.8}Sr_{0.2}MnO_3
Some possible connection between spin and charge degrees of freedom in magneto-resistive manganites is investigated through a thorough experimental study of the magnetic (AC susceptibility and DC magnetization) and transport (resistivity and thermal conductivity) properties. Measurements are reported in the case of wel...
0709.4210v1
2008-11-12
Slow Dynamics in Hard Condensed Matter: A Case Study of the Phase Separating System NdNiO$_3$
We report the time dependent response of electrical resistivity in the non-magnetic perovskite oxide NdNiO$_3$ in its phase separated state and provide a physical explanation of the observations. We also model the system and do an accurate Monte Carlo simulation of the observed behavior. While cooling a phase separatio...
0811.1836v1
2009-04-06
Superconductivity in Ti-doped Iron-Arsenide Compound Sr4Cr0.8Ti1.2O6Fe2As2
Superconductivity was achieved in Ti-doped iron-arsenide compound Sr4Cr0.8Ti1.2O6Fe2As2 (abbreviated as Cr-FeAs-42622). The x-ray diffraction measurement shows that this material has a layered structure with the space group of \emph{P4/nmm}, and with the lattice constants a = b = 3.9003 A and c = 15.8376 A. Clear diama...
0904.0972v3
2010-01-15
Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning
We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic do...
1001.2631v2
2010-11-03
A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers
We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity band determining the extended ("metallic" transport) or localized (hopping by t...
1011.1006v1
2011-06-30
The effect of changing electrode metal on solution-processed flexible titanium dioxide memristors
Flexible solution processed memristors show different behaviour dependent on the choice of electrode material. Use of gold for both electrodes leads to switchable WORM (Write Once Read Many times) resistive devices. Use of aluminium for both electrodes increases the richness of behaviour allowing both curved and triang...
1106.6293v2
2011-12-12
Realization of the Switching Mechanism in Resistance Random Access Memory (RRAMTM) Devices: Structural and Electronic Properties Affecting Electron Conductivity in Halfnium Oxide-Electrode System through First Principles Calculations
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching based on oxygen vacancy migration-driven change in electronic properties of the t...
1112.2500v1
2012-11-21
Low Resistance GaN/InGaN/GaN Tunnel Junctions
Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 {\Omega} cm2. The design methodology and low-temperature characteristic of these tunnel junctions is discussed, and insertion into a PN junction device is de...
1211.4905v2
2013-06-04
Bipolar electrical switching in metal-metal contacts
Electrical switching has been observed in carefully designed metal-insulator-metal devices built at small geometries. These devices are also commonly known as memristors and consist of specific materials such as transition metal oxides, chalcogenides, perovskites, oxides with valence defects, or a combination of an ine...
1306.0942v2
2013-10-08
Mechanism for Radiation Damage Resistance in Yttrium Oxide Dispersion Strengthened Steels
ODS steels based on yttrium oxide have been suggested as potential fusion reactor wall materials due to their observed radiation resistance properties. Presumably this radiation resistance can be related to the interaction of the particle with vacancies,self-interstitial atoms (SIAs) and other radiation damage debris. ...
1310.2061v1
2014-02-21
Simultaneous Extraction of Charge Density Dependent Mobility and Variable Contact Resistance from Thin Film Transistors
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obta...
1402.5241v1
2014-02-22
Influence of gas ambient on charge writing at the LaAlO3/SrTiO3 heterointerface
We investigated the influences charge writing on the surface work function and resistance of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments (air, O2, N2, and H2/N2). Charge writing decreased the surface work function and resistance of the LAO/STO sample quite a lot in air but slightly in O2.The...
1402.5479v1
2014-07-07
Influence of surfactants on the electrical resistivity and thermopower of Ni nanoparticles
Compacted pellets of nanocrystalline nickel (NC-Ni) of average particle size ranging from 18 to 33 nm were prepared using a variety of surfactants. They were characterized well and were studied on the influence of the surfactants on the electrical resistivity and thermopower in the temperature range 5 to 300 K. It was ...
1407.1705v2
2014-12-15
Antagonistic in-plane resistivity anisotropies from competing fluctuations in underdoped cuprates
One of the prime manifestations of an anisotropic electronic state in underdoped cuprates is the in-plane resistivity anisotropy $\Delta\rho\equiv(\rho_{a}-\rho_{b})/\rho_{b}$. Here we use a Boltzmann-equation approach to compute the contribution to $\Delta\rho$ arising from scattering by anisotropic charge and spin fl...
1412.4745v2
2015-01-26
Granularity Controlled Non-Saturating Linear Magneto-resistance in Topological Insulator Bi2Te3 Films
We report on the magneto-transport properties of chemical vapor deposition grown films of interconnected Bi2Te3 nanoplates. Similar to many other topological insulator (TI) materials, these granular Bi2Te3 films exhibit a linear magneto-resistance (LMR) effect which has received much recent attention. Studying samples ...
1501.06497v2
2015-08-20
Atomic Diffusion in the Surface State of Mott Insulator NiS2
We present resistivity measurements of Mott insulator NiS2 single crystals after heat treatment. We find a strong increase of the low temperature resistivity that relaxes back towards the pristine behaviour over several days with a time constant of 45 h at room temperature. The low temperature resistivity has previousl...
1508.05020v1
2016-11-12
Thermal boundary resistance from transient nanocalorimetry: a multiscale modeling approach
The Thermal Boundary Resistance at the interface between a nanosized Al film and an Al_{2}O_{3} substrate is investigated at an atomistic level. A room temperature value of 1.4 m^{2}K/GW is found. The thermal dynamics occurring in time-resolved thermo-reflectance experiments is then modelled via macro-physics equations...
1611.04042v1
2018-01-11
Forbidden Backscattering and Resistance Dip in the Quantum Limit as a Signature for Topological Insulators
Identifying topological insulators and semimetals often focuses on their surface states, using spectroscopic methods such as angle-resolved photoemission spectroscopy or scanning tunneling microscopy. In contrast, studying the topological properties of topological insulators from their bulk-state transport is more acce...
1801.03617v3
2018-02-28
Integration of external electric fields in molecular dynamics simulation models for resistive switching devices
Resistive switching devices emerged a huge amount of interest as promising candidates for non-volatile memories as well as artificial synapses due to their memristive behavior. The main physical and chemical phenomena which define their functionality are driven by externally applied voltages, and the resulting electric...
1802.10590v4
2018-03-07
Modelling the longitudinal intensity pattern of diffraction resistant beams in stratified media
In this paper, we study the propagation of the Frozen Wave type beams through non-absorbing stratified media and develop a theoretical method capable to provide the desired spatially shaped diffraction resistant beam in the last material medium. In this context, we also develop a matrix method to deal with stratified m...
1803.03529v1
2019-08-22
Non-Thermal Resistive Switching in Mott Insulators
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in...
1908.08555v1
2019-06-06
Training large-scale ANNs on simulated resistive crossbar arrays
Accelerating training of artificial neural networks (ANN) with analog resistive crossbar arrays is a promising idea. While the concept has been verified on very small ANNs and toy data sets (such as MNIST), more realistically sized ANNs and datasets have not yet been tackled. However, it is to be expected that device m...
1906.02698v1
2020-11-03
Thermodynamically Induced Transport Anomaly in Dilute Metals ZrTe$_5$ and HfTe$_5$
A 40-year-old puzzle in transition metal pentatellurides ZrTe$_5$ and HfTe$_5$ is the anomalous peak in the temperature dependence of the longitudinal resistivity, which is accompanied by sign reverses of the Hall and Seebeck coefficients. We give a plausible explanation for these phenomena without assuming any phase t...
2011.01952v2
2020-11-13
Ab initio screening of metallic MAX ceramics for advanced interconnect applications
The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using automated first principles simulations based on density functional theory. The resistivity scaling potential of these compounds, i.e. the s...
2011.06902v2
2020-12-02
Interfacial studies in CNT fibre/TiO$_{2}$ photoelectrodes for efficient H$_{2}$ production
An attractive class of materials for photo(electro)chemical reactions are hybrids based on semiconducting metal oxides and nanocarbons (e.g. carbon nanotubes (CNT), graphene), where the nanocarbon acts as a highly-stable conductive scaffold onto which the nanostructured inorganic phase can be immobilised; an architectu...
2012.01109v1
2021-04-26
Role of electron and ion irradiation in a reliable lift-off process with e-beam evaporation and a bilayer PMMA resist system
This paper addresses issues related to cracking and blisters in deposited films encountered in a lift-off process with electron beam evaporation and a bilayer PMMA resist system. The impact of charged particles, i.e. electrons and ions, is investigated using an electron beam evaporation chamber equipped with ring-magne...
2104.12452v1
2021-05-24
Spatio-temporal dynamics of voltage-induced resistance transition in the double-exchange model
We present multi-scale dynamical simulations of voltage-induced insulator-to-metal transition in the double exchange model, a canonical example of itinerant magnet and correlated electron systems. By combining nonequilibrium Green's function method with large-scale Landau-Lifshitz-Gilbert dynamics, we show that the tra...
2105.11076v2
2021-10-14
Filamentary superconductivity of resistively-switched strontium titanate
SrTiO$_3$, although a wide gap insulator, has long been known to become metallic and superconducting at extremely low doping levels. This has given rise to questions concerning the coexistence or interdependence of metallicity, superconductivity, and the material's polar properties. This issue becomes especially intrig...
2110.07230v1
2022-01-20
Algorithm for constructing customized quantized resistances in graphene $p-n$ junctions
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall re...
2201.08290v1
2022-12-08
Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions
Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of mos...
2212.04378v1
2024-03-17
Resistive and ballistic phonon transport in $β$-Ga$_2$O$_3$
The anisotropic thermal conductivity and the phonon mean free path (mfp) in monoclinic $\beta$-Ga$_2$O$_3$ single crystals and homoepitaxial films of several $\mu$m were determined using the 3$\omega$-method in the temperature range from 10K-300 K. The measured effective thermal conductivity of both, single crystal and...
2403.11341v1
2004-05-05
Low temperature field-effect in crystalline organic material
Molecular organic materials offer the promise of novel electronic devices but also present challenges for understanding charge transport in narrow band systems. Low temperature studies elucidate fundamental transport processes. We report the lowest temperature field effect transport results on a crystalline oligomeric ...
0405077v1
2022-07-22
Fabrication of highly resistive NiO thin films for nanoelectronic applications
Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization...
2207.10837v1
2022-11-15
Nucleation and development of multiple cracks in thin composite fibers
We study the nucleation and development of crack patterns in thin composite fibers under tension in this work. A fiber comprises an elastic core and an outer layer of a weaker brittle material. In recent tensile experiments on such composites, multiple cracks were observed to develop simultaneously on the outer layer. ...
2212.02232v1
2024-05-19
Modes, Bounds, and Synthesis of Optimal Electromagnetic Scatterers
This paper presents an optimal synthesis of material distributions in obstacles for maximal extinction, scattering, or absorption. The material synthesis is based on an explicit construction utilizing the current distribution derived from physical bounds excited from the far-field. The bounds are expressed in radiation...
2405.11499v1
2002-10-29
Electrical anisotropy in high-Tc granular superconductors in a magnetic field
We propose an analytical model devoted to explain the anisotropy of the electrical resistance observed below the critical temperature in granular high-Tc superconductors submitted to a magnetic field H. Reported experimental results obtained on a YBCO sample show that the superconducting transition occurs in two stages...
0210648v1