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2010-03-12
Electronic phase diagram of NdFe1-xRhxAsO
We report on the electrical resistivity, thermoelectric power and electronic phase diagram of rhodium-doped NdFeAsO. Rhodium doping suppresses the structural phase transition and spin density wave observed in the undoped material, and superconductivity emerges at x close to 0.05, despite the distortion of FeAs4 tetrahe...
1003.2528v1
2010-06-02
Emergence of current branches in a series array of negative differential resistance circuit elements
We study a series array of nonlinear electrical circuit elements that possess negative differential resistance and find that \emph{heterogeneity} in the element properties leads to the presence of multiple branches in current-voltage curves and a non-uniform distribution of voltages across the elements. An inhomogeneit...
1006.0434v1
2010-10-08
On giant piezoresistance effects in silicon nanowires and microwires
The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of surface depleted silicon nano- and micro-structures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces. Importantly, this time varying re...
1010.1633v1
2011-03-08
Electric--field effect on electron-doped infinite-layer Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films
We have used the electric--field effect to modulate the resistivity of the surface of underdoped Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films, allowing opposite modifications of the electron and hole density in the CuO$_2$ planes, an original situation with respect to conventional chemical doping in electron-doped mate...
1103.1548v2
2011-03-17
Structure-related transport properties of A-site ordered perovskite Sr3ErMn4-xGaxO10.5-d
We report x-ray diffraction, resistivity, thermopower, and magnetization of Sr3ErMn4-xGaxO10.5-d, in which A-site ordered tetragonal phase appears above x=1, and reveal that the system exhibits typical properties seen in the antiferromagnetic insulator with Mn3+. We succeed in preparing both A-site ordered and disorder...
1103.3342v1
2011-08-19
Hydrostatic pressure study of paramagnetic-ferromagnetic phase transition in (Ga,Mn)As
The effect of hydrostatic pressure on the paramagnetic - ferromagnetic phase transition has been studied in (Ga,Mn)As. The variation of the Curie temperature (TC) with pressure was monitored by two transport methods: (1) - measurement of zero field resistivity versus temperature {\rho}(T), (2) - dependence on temperatu...
1108.3960v1
2011-09-26
Anomalous Hall effect in the Co-based Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl
The anomalous Hall effect (AHE) in the Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the elec...
1109.5498v1
2011-10-22
Anomalous negative differential thermal resistance in a momentum-conserving lattice
A two-segment Fermi-Pasta-Ulam lattices has been investigated by using nonequilibrium molecular dynamics. Here we present an anomalous negative differential thermal resistance (NDTR) that have not been reported in Frenkel-Kontorova and \phi_4 lattices up to the present. The NDTR disappears at low temperature region. Th...
1110.4942v1
2011-12-09
Temperature Coefficient of Resistivity in Amorphous Semiconductors
By invoking the microscopic response method in conjunction with a reasonable set of approximations, we obtain new explicit expressions for the electrical conductivity and temperature coefficient of resistivity (TCR) in amorphous semiconductors, especially a-Si:H and a-Ge:H. The predicted TCR for n-doped a-Si:H and a-Ge...
1112.2169v2
2012-08-19
Interplay between sheet resistance increase and magnetotransport properties in ${\rm LaAlO_3}/{\rm SrTiO_3}$
We find that the sheet resistance ($R_s$) of patterned samples of ${\rm LaAlO_3}/{\rm SrTiO_3}$ with a length scale of several microns may increase significantly at low temperatures in connection with driving electrical currents and applying in-plane magnetic fields. As the samples are warmed up, $R_s$ recovers to its ...
1208.3837v1
2012-09-24
Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations
In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect of rotating \textit{in-situ} the electric field of linearly polarized microwaves relative to the current, on the microwave-radiation-induced magneto-resistance oscillations. We find that the frequency and the phase of the photo-excited magneto-r...
1209.5135v1
2012-10-09
Thermopower as sensitive probe of electronic nematicity in iron pnictides
We study the in-plane anisotropy of the thermoelectric power and electrical resistivity on detwinned single crystals of isovalent substituted EuFe$_{2}$(As$_{1-x}$P$_{x}$)$_2$. Compared to the resistivity anisotropy the thermopower anisotropy is more pronounced and clearly visible already at temperatures much above the...
1210.2634v2
2012-10-29
Anomalous Energy Transport across Topological Insulator Superconductor Junctions
We study the nonequilibrium energy transport across a topological insulator/superconductor junction, by deriving an interfacial heat current formula through scattering wave approach. Several anomalous thermal properties are uncovered, such as thermal energy's Klein tunneling, asymmetric Kapitza resistance and negative ...
1210.7551v2
2012-10-29
Resistance Switching Induced by Electric Field and Light Illumination in Device of FTO/CeO2/Electrolyte/FTO
A heterojunction-like device consisting of FTO/CeO2/electrolyte/FTO is established with distinct transport performance, where FTO denotes F-doped transparent conducting glass, and the electrolyte is LiI and I2 in acetonitrile. The resistive switching behavior is observed, being induced through applying sufficient negat...
1210.7558v2
2012-11-06
Angular dependence of the Hall effect of lsmo films
We find that the Hall effect resistivity ($\rho_{xy}$) of thin films of \lsmo\ varies as a function of the angle $\theta$ between the applied magnetic field and the film normal as $\rho_{xy}=a\cos \theta + b\cos 3\theta$, where $|b|$ increases with increasing temperature and decreases with increasing magnetic field. We...
1211.1160v1
2013-09-25
Magnetic and transport properties of Mn2CoAl oriented thin films
The structure, magnetic and transport properties of thin films of the Heusler ferrimagnet Mn_{2}CoAl have been investigated for properties related to spin gapless semiconductors. Oriented films were grown by molecular beam epitaxy on GaAs substrates and the structure was found to transform from tetragonal to cubic for ...
1309.6660v1
2014-02-15
Ferromagnetism and transport properties of the Kondo system Ce4Sb1.5Ge1.5
Ferromagnetic ordering with a small magnetic moment is found below 14 K from SQUID measurements for the compound Ce4Sb1.5Ge1.5. The transport characteristics of a number of Ce4Sb3-xTx (T = Ge, Si, Sn, Pb, Al) systems were measured at room temperature, Ce4Sb1.5Ge1.5 demonstrating the highest Seebeck coefficient. Its tra...
1402.3667v2
2014-02-20
Transverse ultrasonic anomaly in La1/3Sr2/3MnO3
The charge ordering (CO) transition in polycrystalline La1/3Sr2/3MnO3 has been studied by measuring the resistivity, magnetization and transverse ultrasonic velocity. At about 235K, a conspicuous increase in resistivity was observed, while the magnetization shows a cusp structure, corresponding to an antiferromagnetic ...
1402.4857v2
2014-03-01
Anomalies of transport properties in antiferromagnetic YbMn2Sb2 compound
The low-temperature transport properties (resistivity, thermal conductivity, thermoelectric power) are experimentally investigated for the compound YbMn2Sb2. Large Seebeck coefficient and nearly linear temperature dependence of resistivity are obtained. The thermal conductivity is large and has mainly phonon origin. Ap...
1403.0077v2
2014-05-23
Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure
The present paper discusses the influence of Tin Sulphide's grain size on the performance of ITO/PEDOT:PSS/SnS/Al structured solar cells fabricated by thermal evaporation. The grain sizes were maintained in the range of 11-18~nm by controlling the thickness of SnS films. While the open circuit voltage (Voc) was found t...
1405.6013v1
2014-07-29
Proximity coupling of granular film with ferroelectric substrate and giant electro-resistance effect
We study electron transport in granular film placed above the ferroelectric substrate. We show that the conductivity of granular film strongly depends on the ferroelectric state due to screening effects which modify the Coulomb blockade in granular film. In particular, the electric current in granular film is controlle...
1407.7719v2
2014-10-28
Tunable Solid State and Flexible Graphene Electronics
We demonstrate tunable solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite dielectric reduces the operating gate voltages significantly from 10 V to 1 V requ...
1410.7563v1
2015-12-29
Scaling like behaviour of resistivity observed in LaNiO_3 thin films grown on SrTiO_3 substrate by pulsed laser deposition
We discuss the origin of the temperature dependence of resistivity observed in highly oriented LaNiO_3 thin films (of thickness d) grown on SrTiO_3 substrate by a pulsed laser deposition technique. All the experimental data are found to collapse into a single universal curve [T/T_{sf}(d)]^{3/2} for the entire temperatu...
1512.08812v1
2016-02-22
Exchange magnon induced resistance asymmetry in permalloy spin-Hall oscillators
We investigate magnetization dynamics in a spin-Hall oscillator using a direct current measurement as well as conventional microwave spectrum analysis. When the current applies an anti-damping spin-transfer torque, we observe a change in resistance which we ascribe to the excitation of incoherent exchange magnons. A si...
1602.06710v1
2016-06-16
Determining Curie temperature of (Ga,Mn)As samples based on electrical transport measurements: low Curie temperature case
In this paper we show that the widely accepted method of the determination of Curie temperature (TC) in (Ga,Mn)As samples, based on the position of the peak in the temperature derivative of the resistivity,completely fails in the case of non-metallic and low-TC unannealed samples. In this case we propose an alternative...
1606.05132v1
2016-10-04
Hidden Fermi-liquid charge transport in the antiferromagnetic phase of the electron-doped cuprates
Systematic analysis of the planar resistivity, Hall effect and cotangent of the Hall angle for the electron-doped cuprates reveals underlying Fermi-liquid behavior even deep in the antiferromagnetic part of the phase diagram. The transport scattering rate exhibits a quadratic temperature dependence, and is nearly indep...
1610.01181v1
2018-02-06
Exploring the energy landscape of resistive switching in antiferromagnetic Sr(3)Ir(2)O(7)
We study the resistive switching triggered by an applied electrical bias in antiferromagnetic Mott insulator Sr(3)Ir(2)O(7). The switching was previously associated with an electric-field driven structural transition. Here we use time-resolved measurements of the switching to probe the energy barrier associated with th...
1802.01923v1
2018-01-13
Electrochemical and mechanical behaviors of dissimilar friction stir welding between 5086 and 6061 aluminum alloy
The electrochemical behavior and mechanical properties of friction stir welded AA5086 and AA6061 Al alloys were investigated. Micro-hardness measurements and tensile tests showed that the heat-affected zone (HAZ) in AA6061 had minimum hardness value (i.e., 88 HV) and served as failure site in the dissimilar weld. Corro...
1802.03460v1
2018-02-21
Gate-tunable memristors from monolayer MoS2
We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2 films with grain sizes of 3-5 um. The device characteristics show switching ratios up to 500, with the r...
1802.07785v1
2018-06-11
Low-temperature resistance in metals without inversion Center
The well known quadratic low-temperature dependence of resistance in ordinary metals habitually serves as the criterium of applicability of the Landau Fermi liquid theory to the description of electron liquid in concrete material. Such a type of behavior is determined by momentum relaxation due to the electron-electron...
1806.03952v3
2019-02-24
Half-Metallic Ferromagnets and Spin Gapless Semiconductors
A brief review of experimental and theoretical studies of half-metallic ferromagnets (HMF) and spin gapless semiconductors (SGS) is given. The data on resistivity and magnetoresistivity are presented. An important role of non-quasiparticle states owing to electron-magnon scattering in transport properties is discussed....
1902.08972v1
2007-10-09
The approach to a superconductor-to-Bose-insulator transition in disordered films
Through a detailed study of scaling near the magnetic field-tuned superconductor-to-insulator transition in strongly disordered films, we find that results for a variety of materials can be collapsed onto a single phase diagram. The data display two clear branches, one with weak disorder and an intervening metallic pha...
0710.1822v1
2019-04-26
Semiconductor to metal transition for Ni doped CdO thin films
In the present investigation resistivity Vs temperature measurements have been performed for solgel prepared pure and Ni doped CdO (NDO) thin films. The semiconducting behavior i.e. negative temperature coefficient of resistivity (TCR) of pure CdO thin film through-out the whole temperature range can be attributed main...
1904.11683v1
2012-03-02
Oxygen-vacancy-mediated Negative Differential Resistance in La and Mg co-substituted BiFeO3 Thin Film
The conductive characteristics of Bi0.9La0.1Fe0.96Mg0.04O3(BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the thin film, where a leakage current peak occurs upon application of a downward electric field above 80 oC. The origin of the NDR behavior is ...
1203.0458v1
2015-06-01
Soft-mask fabrication of gallium arsenide nanomembranes for integrated quantum photonics
We report on the fabrication of quantum photonic integrated circuits based on suspended GaAs membranes. The fabrication process consists of a single lithographic step followed by inductively-coupled-plasma dry etching through an electron-beam-resist mask and wet etching of a sacrificial layer. This method does not requ...
1506.00376v1
2015-06-11
Three-dimensional continuum dislocation theory
A three-dimensional continuum dislocation theory for single crystals containing curved dislocations is proposed. A set of governing equations and boundary conditions is derived for the true placement, plastic slips, and loop functions in equilibrium that minimize the free energy of crystal among all admissible function...
1506.03570v1
2015-07-16
Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system
We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8K and magnetic fields below 5T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of ...
1507.04601v1
2019-01-15
Effect of thermal history on magnetism in UCoGa
Single crystals of UCoGa have been grown in different conditions and subsequently annealed in order to provide a collection of samples representing various quality as to concentration of lattice defects. The different sample quality "grades" have been characterized by values of residual electrical resistivity. Correlat...
1901.04806v2
2019-11-12
Effect of Interfacial Thermal Resistance in Thermal Cloak
When heat transfers through interface between two different materials, it will encounter an interfacial thermal resistance (ITR) that makes the temperature discontinuous. This effect has been totally neglected so far in the research of thermal cloak, in particular when the thermal cloak is built with multilayer structu...
1911.05098v2
2020-07-02
Current distribution in metallic multilayers from resistance measurements
The in-plane current profile within multilayers of generic structure Ta/Pt/(CoNi)/Pt/Ta is investigated. A large set of samples where the thickness of each layer is systematically varied was grown, followed by the measurement of the sheet resistance of each sample. The data are analyzed by a series of increasingly elab...
2007.00990v1
2021-07-09
Transport and relaxation of current-generated nonequilibrium phonons from nonlocal electronic measurements
We study phonons generated by current in a Pt nanowire, by measuring resistance of another nanowire separated from the first one by an insulating spacer. For thin spacers, the resistance varies almost linearly with current at cryogenic temperatures, while an additional quadratic contribution emerges for thicker spacers...
2107.04634v1
2022-05-27
Adhesive Transfer operates during Galling
In order to reduce cobalt within the primary circuit of pressurised water reactors (PWRs), wear-resistant steels are being researched and developed. In particular interest is the understanding of galling mechanisms, an adhesive wear mechanism which is particularly prevalent in PWR valves. Here we show that large shear ...
2205.14231v2
2022-07-12
Multiscale Modeling of Semimetal Contact to Two-Dimensional Transition Metal Dichalcogenide Semiconductor
A multiscale simulation approach is developed to simulate the contact transport properties between semimetal to a monolayer two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductor. The results elucidate the mechanisms for low contact resistance between semimetal and TMDC semiconductor contacts from a ...
2207.05781v1
2023-05-09
Thermo-electric history effects and resistive switching in epitaxial thin film of Mott insulator V2O3
We report interesting thermo-electric history effects associated with an electric field-induced first order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V2O3. This phase transition results in tuneable resistive switching in V2O3. These findings are promising for novel technol...
2305.05190v1
2023-11-20
First principles residual resistivity using locally self-consistent multiple scattering method
The locally self-consistent multiple scattering (LSMS) method can perform efficient first-principles calculations of systems with large number of atoms. In this work, we combine the Kubo-Greenwood equation with LSMS, enabling us to calculate first-principles residual resistivity of large systems. This has been implemen...
2311.12134v1
2024-02-29
Current-induced sliding motion in a helimagnet MnAu$_2$
We have found a signature of current-induced sliding motion in a helimagnet MnAu$_2$ thin film. In the helimagnetic state with a uniform chirality, differential resistivity shows an abrupt change at a threshold bias current. Judging from the similarity to the canonical charge/spin density wave systems, we have ascribed...
2403.00167v1
2005-09-21
Effect of iron-doping on spin-state transition and ferromagnetism in Pr$_{0.5}$Ca$_{0.5}$CoO$_{3-δ}$ cobalt oxides
Resistivity and dc magnetization measurements were performed for the polycrystalline Pr$_{0.5}$Ca$_{0.5}$Co$_{1-x}$Fe$_{x}$O$_{3-\delta}$ ($x$ = 0, 0.05, 0.10 and 0.15) samples. The as-fabricated samples exhibit ferromagnetic (FM) transition and the transition temperature increases with increasing the iron doping level...
0509533v1
2008-01-08
Quantum oscillations and the Fermi surface in an underdoped high-Tc superconductor
Despite twenty years of research, the phase diagram of high transition- temperature superconductors remains enigmatic. A central issue is the origin of the differences in the physical properties of these copper oxides doped to opposite sides of the superconducting region. In the overdoped regime, the material behaves a...
0801.1281v1
2015-11-16
Accurate Measurements of Cross-plane Thermal Conductivity of Thin Films by Dual-Frequency Time-Domain Thermoreflectance (TDTR)
Accurate measurements of the cross-plane thermal conductivity {\Lambda}_cross of a high-thermal-conductivity thin film on a low-thermal-conductivity ({\Lambda}_s) substrate (e.g., {\Lambda}_cross/{\Lambda}_s>20) are challenging, due to the low thermal resistance of the thin film compared to that of the substrate. In pr...
1511.04852v2
2015-12-04
2D layered transport properties from topological insulator Bi$_2$Se$_3$ single crystals and micro flakes
Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high ...
1512.01442v2
2015-12-22
Dome-shaped magnetic order competing with high-temperature superconductivity at high pressures in FeSe
The coexistence and competition between superconductivity and electronic orders, such as spin or charge density waves, have been a central issue in high transition-temperature (${T_{\rm c}}$) superconductors. Unlike other iron-based superconductors, FeSe exhibits nematic ordering without magnetism whose relationship wi...
1512.06951v1
2016-06-06
Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable ...
1606.01709v1
2018-06-01
Amplifier for scanning tunneling microscopy at MHz frequencies
Conventional scanning tunneling microscopy (STM) is limited to a bandwidth of circa 1kHz around DC. Here, we develop, build and test a novel amplifier circuit capable of measuring the tunneling current in the MHz regime while simultaneously performing conventional STM measurements. This is achieved with an amplifier ci...
1806.00374v1
2019-09-27
Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6
The efficiency of energy conversion in thermoelectric generators (TEGs) is directly proportional to electrical conductivity and Seebeck coefficient while inversely to thermal conductivity. The challenge is to optimize these interdependent parameters simultaneously. In this work, the problem is addressed with a novel ap...
1909.12476v1
2019-02-27
Learning nonlinear level sets for dimensionality reduction in function approximation
We developed a Nonlinear Level-set Learning (NLL) method for dimensionality reduction in high-dimensional function approximation with small data. This work is motivated by a variety of design tasks in real-world engineering applications, where practitioners would replace their computationally intensive physical models ...
1902.10652v3
2015-06-29
Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors
Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in semiconductor-insulator-graphene (SIG) capacitors are investigated with respect to their su...
1506.08721v2
2019-01-05
Transmission lines and resonators based on quantum Hall plasmonics: electromagnetic field, attenuation and coupling to qubits
Quantum Hall edge states have some characteristic features that can prove useful to measure and control solid state qubits. For example, their high voltage to current ratio and their dissipationless nature can be exploited to manufacture low-loss microwave transmission lines and resonators with a characteristic impedan...
1901.01455v1
2020-01-16
Anisotropic character of the metal-to-metal transition in Pr4Ni$_3$O$_{10}$
As a member of the Ruddlesden-Popper Ln$_{n+1}$Ni$_n$O$_{3n+1}$ series rare-earth-nickelates, the Pr4Ni$_3$O$_{10}$ consists of infinite quasi-two-dimensional perovskite-like Ni-O based layers. Although a metal-to-metal phase transition at Tpt = 157 K has been revealed by previous studies, a comprehensive study of phys...
2001.05916v2
2020-06-08
200 mm Sensor Development Using Bonded Wafers
Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to $\> 200\ m^2$ for the existing CMS tracker. High Luminosity Large Hadron Collider (HL-LHC), CMS and ATLAS t...
2006.04888v2
2021-02-11
High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performance of p-channel transistors compared with that of n-channel transisto...
2102.05982v2
2021-03-30
High-Tc superconductivity in clathrate calcium hydride CaH6
Recent discovery of superconductive rare earth/actinide superhydrides has ushered in a new era of superconductivity research at high pressures. This distinct type of clathrate metal hydrides was first proposed for alkaline-earth-metal hydride CaH6 that, however, has long eluded experimental synthesis, impeding an under...
2103.16282v3
2022-12-28
Superconductivity Observed in Tantalum Polyhydride at High Pressure
We report experimental discovery of tantalum polyhydride superconductor. It was synthesized at high pressure and high temperature conditions using diamond anvil cell combined with in-situ high pressure laser heating techniques. The superconductivity was investigated via resistance measurements at pressures. The highest...
2212.13739v3
2024-02-19
Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology
Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capab...
2402.12153v1
2019-02-08
Investigating Short-term and Long-term Binder Performance of High-RAP Mixtures Containing Waste Cooking Oil
The environmental and economic benefits of recycling asphalt pavements have received much attention in recent years. Because of the increase in the cost of raw materials and energy carriers, the reuse of large portions of reclaimed asphalt pavement (RAP) is critical in reducing both the cost and environmental footprint...
1905.13701v1
2016-03-12
Complex structures of dense lithium: electronic origin
Lithium - the lightest alkali metal - exhibits unexpected structures and electronic behaviour at high pressures. As the heavier alkalis, Li is bcc at ambient pressure and transforms first to fcc (at 7.5 GPa). The post-fcc high-pressure form Li-cI16 (at 40-60 GPa) is similar to Na-cI16 and related to more complex struct...
1603.03926v1
2019-03-28
High spin-polarization in the low Curie temperature complex itinerant ferromagnet EuTi$_{1-x}$Nb$_x$O$_3$
The physical systems with ferromagnetism and "bad" metallicity hosting unusual transport properties are playgrounds of novel quantum phenomena. Recently EuTi$_{1-x}$Nb$_x$O$_3$ emerged as a ferromagnetic system where non-trivial temperature dependent transport properties are observed due to coexistence and competition ...
1903.12022v1
2011-04-22
Can nothing be a superconductor and a superfluid?
A superconductor is a material that conducts electric current with no resistance. Superconductivity and magnetism are known to be antagonistic phenomena: superconductors expel weak external magnetic field (the Meissner effect) while a sufficiently strong magnetic field, in general, destroys superconductivity. In a seem...
1104.4404v1
2019-06-14
Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO
We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystal structure. We observe a high magnetoresistance ratio up to 96% at room temperature (RT) and find that these MTJs have asymmetric current-voltage characteristics, and...
1906.05981v1
2020-11-24
Inkjet printed circuits with two-dimensional semiconductor inks for high-performance electronics
Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-dimensional materials have the potential to enable the next generation of high performance, low-cost printed digital electronics. Here we dem...
2011.12359v1
2020-11-26
A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity
The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transp...
2011.13106v2
2021-06-17
Quasi-solid-state sodium-ion hybrid capacitors enabled by UiO-66@PVDF-HFP multifunctional separators: selective charge transfer and high safety
The practical application of sodium-ion hybrid capacitors is limited by their low energy densities resulted from the kinetics mismatch between cathodes and anodes, and the fire safety related to the flammable electrolyte-separator system. Hence, we report a rational design of metal-organic frameworks (MOFs, UiO-66) mod...
2106.09654v1
2021-12-13
Robustness of superconductivity to external pressure in high-entropy-alloy-type metal telluride AgInSnPbBiTe5
High-entropy-alloy (HEA) superconductors are a new class of disordered superconductors. In this study, we investigate the robustness of superconducting states in HEA-type metal telluride (MTe; M = Ag, In, Sn, Pb, Bi) under high pressure. PbTe exhibits a structural transition from a NaCl-type to an orthorhombic Pnma str...
2112.06461v1
2022-12-12
Robust superconductivity and fragile magnetism induced by the strong Cu impurity scattering in the high-pressure phase of FeSe
Superconductivity in FeSe is strongly enhanced under applied pressure and it is proposed to emerge from anomalously coupled structural and magnetic phases. Small impurities inside the Fe plane can strongly disrupt the pair formation in FeSe at ambient pressure and can also reveal the interplay between normal and superc...
2212.06128v1
2023-01-30
Semimetal-Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Ultraviolet Photonics
Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced gap (MIGS) states at the metals-monolayer MoS$_2$ interface limits the applicatio...
2301.12635v1
2023-04-13
Self-doping effect in confined copper selenide semiconducting quantum dots for efficient photoelectrocatalytic oxygen evolution
Self-doping can not only suppress the photogenerated charge recombination of semiconducting quantum dots by self-introducing trapping states within the bandgap, but also provide high-density catalytic active sites as the consequence of abundant non-saturated bonds associated with the defects. Here, we successfully prep...
2304.06422v1
2009-12-15
Kondo effect and absence of quantum interference effects in the charge transport of cobalt doped iron pyrite
The Hall effect and resistivity of the carrier doped magnetic semiconductor Fe$_{1-x}$Co$_x$S$_2$ were measured for $0\le x \le 0.16$, temperatures between 0.05 and 300 K, and fields of up to 9 T. Our Hall data indicate electron charge carriers with a density of only 10 to 30% of the Co density of our crystals. Despite...
0912.2980v1
2022-01-04
Superior effect of edge relative to basal plane functionalization of graphene in enhancing polymer-graphene nanocomposite thermal conductivity-A combined molecular dynamics and Greens functions study
To achieve high thermal conductivity (k) of polymer graphene nanocomposites, it is critically important to achieve efficient thermal coupling between graphene and its surrounding polymers through effective functionalization schemes. In this work, we demonstrate that edge-functionalization of graphene nanoplatelets (GnP...
2201.01011v1
2008-11-14
Electronic transport in ferromagnetic alloys and the Slater-Pauling Curve
Experimental measurements of the residual resistivity $\rho(x)$ of the binary alloy system Fe$_{1-x}$Cr$_x$ have shown an anomalous concentration dependence which deviates significantly from Nordheim's rule. In the low ($x < 10%$) Cr concentration regime the resistivity has been found to increase linearly with $x$ unti...
0811.2303v1
2020-12-11
Improving fretting corrosion resistance of CoCrMo alloy with TiSiN and ZrN coatings for orthopedic applications
Total hip replacement is the most effective treatment for late stage osteoarthritis. However, adverse local tissue reactions (ALTRs) associated with fretting corrosion have been observed in patients with modular total hip implants. The purpose of this study is to increase the fretting corrosion resistance of the CoCrMo...
2012.06614v1
2018-03-06
Approach combining the Rietveld method and pairs distribution function analysis to study crystalline materials under high-pressure and/or temperature: Application to rhombohedral Bi2Te3 phase
An approach combining the Rietveld method and pairs distribution function analysis to study crystalline materials under high pressure or temperature was early proposed by us, and in this study, it was applied to investigate de effect of high pressure on the rhombohedral Bi2Te3 phase. The refined structural parameters o...
1803.02479v1
2021-01-30
Fast drying of high-alumina MgO-bonded refractory castables
Refractory producers face many challenges in terms of producing MgO-containing castables due to the high likelihood of magnesia to hydrate in contact with water, resulting in Mg(OH)2 generation. The expansive feature of this transformation affects the performance of such refractories, as (i) if this hydrated phase is n...
2102.00217v1
2022-03-14
Revisiting stress-corrosion cracking and hydrogen embrittlement in 7xxx-Al alloys at the near-atomic-scale
Hydrogen embrittlement (HE) affects all major high-strength structural materials and as such is a major impediment to lightweighting e.g. vehicles and help reduce carbon-emissions and reach net-zero. The high-strength 7xxx series aluminium alloys can fulfil the need for light, high strength materials, and are already e...
2203.07058v1
2022-04-06
First principles investigation of anionic redox in bisulfate lithium battery cathodes
The search for an alternative high-voltage polyanionic cathode material for Li-ion batteries is vital to improve the energy densities beyond the state-of-the-art, where sulfate frameworks form an important class of high-voltage cathode materials due to the strong inductive effect of the S$^{6+}$ ion. Here, we have inve...
2204.02673v1
2012-09-07
Phase relations in K_xFe_{2-y}Se_2 and the structure of superconducting K_xFe_2Se_2 via high-resolution synchrotron diffraction
Superconductivity in iron selenides has experienced a rapid growth, but not without major inconsistencies in the reported properties. For alkali-intercalated iron selenides, even the structure of the superconducting phase is a subject of debate, in part because the onset of superconductivity is affected much more delic...
1209.1650v1
2015-04-10
Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibit novel physics phenomena that can power high performance electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW so...
1504.02810v5
2018-12-01
Extrinsic n-type semiconductor transition in ZrSe2 with the metallic character through hafnium substitution
Two dimensional layered materials exhibit versatile electronic properties in their different phases. The intrinsic electronic properties of these materials can be modulated through doping or intercalation. In this study, we investigated the electronic properties of Hf doped ZrSe2 single crystals using angle-resolved ph...
1812.00157v2
2021-05-19
Synthesis and properties of free-standing monolayer amorphous carbon
Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks, recent experimental evidence favours the competing crystallite model in the case of amorphous silicon. In two...
2105.08926v1
2021-07-08
Synergistic effect of workfunction and acoustic impedance mismatch for improved thermoelectric performance in GeTe/WC composite
The preparation of composite materials is promising for concurrent optimization of electrical and thermal transport properties to realize an improved thermoelectric (TE) performance. We report the effect of work function and acoustic impedance mismatch (AIM) on the TE properties of (1-z)Ge0.87Mn0.05Sb0.08Te/(z)WC compo...
2107.03803v2
2022-09-09
Asymmetrical contact scaling and measurements in MoS2 FETs
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all device dimensions to achieve higher device density in a certain chip area. For 2...
2209.04144v2
2023-05-12
Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry
Ion implantation has been a key technology for the controlled surface modification of materials in microelectronics and generally, for tribology, biocompatibility, corrosion resistance and many more. To form shallow junctions in Ge is a challenging task. In this work the formation and accumulation of shallow damage pro...
2305.07635v1
2006-03-08
Colossal Magnetoresistance Observed in Monte Carlo Simulations of the One- and Two-Orbital Models for Manganites
The one- and two-orbital double-exchange models for manganites are studied using Monte Carlo computational techniques in the presence of a robust electron-phonon coupling (but neglecting the antiferromagnetic exchange $J_{\rm AF}$ between the localized spins). The focus in this effort is on the analysis of charge trans...
0603221v1
2017-11-02
Non-equilibrium character of resistive switching and negative differential resistance in Ga-doped Cr2O3 system
We have synthesized Ga-doped Cr2O3 system with compositions Cr1.45Ga0.55O3 and Cr1.17Ga0.83O3 by chemical co-precipitation route and post annealing at 800^C. The samples have been stabilized in rhombohedral crystal structure with space group R3C. The present work focuses on the study of non-linear current-voltage (I-V)...
1711.00687v1
2020-04-24
Graphene-Polyurethane Coatings for Deformable Conductors and Electromagnetic Interference Shielding
Electrically conductive, polymeric materials that maintain their conductivity even when under significant mechanical deformation are needed for actuator electrodes, conformable electromagnetic shielding, stretchable tactile sensors and flexible energy storage. The challenge for these materials is that the percolated, e...
2004.11613v1
2016-03-20
Three-dimensional resistivity switching between correlated electronic states in 1T-TaS2
Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such remarkable behavior. Here we experimentally address the question of whether two-dimensi...
1603.06214v1
2019-12-17
Antiferromagnetic CuMnAs: Ab initio description of finite temperature magnetism and resistivity
Noncollinear magnetic moments in antiferromagnets (AFM) lead to a complex behavior of electrical transport, even to a decreasing resistivity due to an increasing temperature. Proper treatment of such phenomena is required for understanding AFM systems at finite temperatures; however first-principles description of thes...
1912.08025v4
2020-12-30
Non-thermal light-assisted resistance collapse in a V$_2$O$_3$-based Mott-insulator device
The insulator-to-metal transition in Mott insulators is the key mechanism for a novel class of electronic devices, belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control protocols, usually based on the application of voltage, strain, pressure and light ...
2012.15255v2
2023-06-07
Slip Resistance Test Apparatus of Synthetic Rubber Trackpad on Photovoltaic Surface
The increasing development of the solar energy industry in many countries has led to a rising frequency of human and robot presence in this area. To ensure occupational safety, various protective equipment, including rubber material, is commonly used for slip resistance while moving on the surface of solar PV panels. T...
2306.10032v1
2023-08-14
Temperature-dependent $f$-electron evolution in CeCoIn$_5$ via a comparative infrared study with LaCoIn$_5$
We investigated CeCoIn$_5$ and LaCoIn$_5$ single crystals, which have the same HoCoGa$_5$-type tetragonal crystal structure, using infrared spectroscopy. However, while CeCoIn$_5$ has 4$f$ electrons, LaCoIn$_5$ does not. By comparing these two material systems, we extracted the temperature-dependent electronic evolutio...
2308.06881v1
2024-02-01
Mott resistive switching initiated by topological defects
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation...
2402.00747v1
2024-05-14
A new ferromagnetic semiconductor system of Eu$_{1-x}$Sr$_x$AgP $(x = 0.0-0.6)$ compounds: Crystallographic, magnetic, and magneto-resistive properties
Adjusting chemical pressure through doping is a highly effective method for customizing the chemical and physical properties of materials, along with their respective phase diagrams, thereby uncovering novel quantum phenomena. Here, we successfully synthesized Sr-doped Eu$_{1-x}$Sr$_x$AgP $(x = 0.0-0.6)$ and conducted ...
2405.08357v1