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2018-09-09
Efficient thermionic operation and phonon isolation by a semiconductor-superconductor junction
Control of heat flux at small length scales is crucial for numerous solid-state devices and systems. In addition to the thermal management of information and communication devices the mastering of heat transfer channels down to the nanoscale also enable, e.g., new memory concepts, high sensitivity detectors and sensors, energy harvesters and compact solid-state refrigerators. Electronic coolers and thermal detectors for electromagnetic radiation, especially, rely on the maximization of electro-thermal response and blockade of phonon transport. In this work, we propose and demonstrate that efficient electro-thermal operation and phonon transfer blocking can be achieved in a single solid-state thermionic junction. Our experimental demonstration relies on suspended semiconductor-superconductor junctions where the electro-thermal response arises from the superconducting energy gap, and the phonon blocking naturally results from the transmission bottleneck at the junction. We suspend different size degenerately doped silicon chips (up to macroscopic scale) directly from the junctions and cool these by biasing the junctions. The electronic cooling operation characteristics are accompanied by measurement and analysis of the thermal resistance components in the structures indicating the operation principle of phonon blocking in the junctions.
1809.02994v1
2018-11-02
Conformal printing of graphene for single and multi-layered devices on to arbitrarily shaped 3D surfaces
Printing has drawn a lot of attention as a means of low per-unit cost and high throughput patterning of graphene inks for scaled-up thin-form factor device manufacturing. However, traditional printing processes require a flat surface and are incapable of achieving patterning on to 3D objects. Here, we present a conformal printing method to achieve functional graphene-based patterns on to arbitrarily-shaped surfaces. Using experimental design, we formulate a water-insoluble graphene ink with optimum conductivity. We then print single and multi-layered electrically functional structures on to a sacrificial layer using conventional screen printing. The print is then floated on water, allowing the dissolution of the sacrificial layer, while retaining the functional patterns. The single and multilayer patterns can then be directly transferred on to arbitrarily-shaped 3D objects without requiring any post deposition processing. Using this technique, we demonstrate conformal printing of single and multilayer functional devices that include joule heaters, resistive strain sensors and proximity sensors on hard, flexible and soft substrates, such as glass, latex, thermoplastics, textiles, and even candies and marshmallows. Our simple strategy offers great promises to add new device and sensing functionalities to previously inert 3D surfaces.
1811.01073v2
2018-11-12
Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC
In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Our data are interpreted by a model based on the competition of the SiC decomposition rate, controlled by the Ar flow, with a uniform graphene buffer layer formation under the equilibrium process at the SiC surface. The proper choice of a set of growth parameters allows the growth of defect-free, ultra-smooth and coherent graphene-free buffer layer and bilayer-free monolayer graphene sheets which can be transformed into large-area high-quality quasi-freestanding monolayer and bilayer graphene (QFMLG and QFBLG) by hydrogen intercalation. AFM, scanning tunneling microscopy (STM), Raman spectroscopy and electronic transport measurements underline the excellent homogeneity of the resulting quasi-freestanding layers. Electronic transport measurements in four-point probe configuration reveal a homogeneous low resistance anisotropy on both {\mu}m- and mm scales.
1811.04998v1
2018-11-14
Giant anisotropy in superconducting single crystals of CsCa$_2$Fe$_4$As$_4$F$_2$
CsCa$_2$Fe$_4$As$_4$F$_2$ is a newly discovered iron-based superconductor with $T_\mathrm{c}\sim$ 30 K containing double Fe$_2$As$_2$ layers that are separated by insulating Ca$_2$F$_2$ spacer layers. Here we report the transport and magnetization measurements on CsCa$_2$Fe$_4$As$_4$F$_2$ single crystals grown for the first time using the self flux of CsAs. We observed a huge resistivity anisotropy $\rho_c(T)/\rho_{ab}(T)$, which increases with decreasing temperature, from 750 at 300 K to 3150 at 32 K. The $\rho_c(T)$ data exhibit a non-metallic behavior above $\sim$140 K, suggesting an incoherent electronic state at high temperatures due to the dimension crossover. The superconducting onset transition temperature in $\rho_{ab}$ is 0.7 K higher than that in $\rho_c$, suggesting two-dimensional (2D) superconducting fluctuations. The lower and upper critical fields also show an exceptional anisotropy among iron-based superconductors. The $H_{c1}^\bot(T)$ data are well fitted using the model with two $s$-wave-like superconducting gaps, $\Delta_1(0)=6.75$ meV and $\Delta_2(0)=2.32$ meV. The inter-plane coherence length $\xi_c(0)$ is $3.6$ \AA, remarkably smaller than the distance between conducting layers (8.6 \AA), consolidating the 2D nature in the title material.
1811.05706v1
2019-02-01
Light Enhanced Blue Energy Generation using MoS$_2$ Nanopores
Blue energy relies on the chemical potential difference generated between solutions of high and low ionic strength and would provide a sun-and-wind independent energy source at estuaries around the world. Converting this osmotic energy through reverse-electrodialysis relies on ion-selective membranes. A novel generation of these membranes is based on atomically thin MoS$_2$ membranes to decrease the resistance to current flow to increase power output. By modulating the surface charge by light we are able to raise the ion selectivity of the membrane by a factor of 5 while staying at a neutral pH. Furthermore, we find that the behavior of small nanopores is dominated by surface conductance. We introduce a formalism based on the Dukhin number to quantify these effects in the case of a concentration gradient system. As a consequence, the charges created by light illumination provoke two important changes. Increased surface charge at the pore rim enhances the ion selectivity and therefore larger osmotic voltage (dominating in small pores), while the increased surface charge of the overall membrane enhances the surface conductance and therefore the osmotic current (dominating in larger pores). The combination of these effects might be able to efficiently boost the energy generation with arrays of nanopores with varying pore sizes.
1902.00410v1
2019-02-25
Synaptic Learning and Memory Functions Achieved in Self-rectifying BFO Memristor under Extreme Environmental Temperature
Memristors have been intensively studied in recent years as promising building blocks for next-generation non-volatile memory, artificial neural networks and brain-inspired computing systems. Even though the environment adaptability of memristor has been required in many application fields, it has been rarely reported due to the underlying mechanism could become invalid especially at an elevated temperature. Here, we focus on achieving synaptic learning and memory functions in BiFeO3 memristor in a wide range of temperature. We have proved the ferroelectricity of BFO films at a record-high temperature of 500 {\deg}C by piezoresponse force microscopy (PFM) measurement. Due to the robust ferroelectricity of BFO thin film, an analog-like resistance switching behavior has been clearly found in a wide range of temperature, which is attributed to the reversal of ferroelectric polarization. Various synaptic functions including long-term potentiation (LTP), depression (LTD), consecutive potentiation/depression (P/D) and spike-timing dependent plasticity (STDP) have been realized from -170 to 300 {\deg}C, illustrating their potential for electronic applications even under extreme environmental temperature.
1902.09081v1
2019-07-03
Probing defect states in few-layer MoS$_{2}$ by conductance fluctuation spectroscopy
Despite the concerted effort of several research groups, a detailed experimental account of defect dynamics in high-quality single- and few-layer transition metal dichalcogenides remain elusive. In this paper we report an experimental study of the temperature dependence of conductance and conductance-fluctuations on several few-layer MoS$_{2}$ exfoliated on hexagonal boron nitride and covered by a capping layer of high-$\kappa$ dielectric HfO$_{2}$. The presence of the high-$\kappa$ dielectric made the device extremely stable against environmental degradation as well as resistant to changes in device characteristics upon repeated thermal cycling enabling us to obtain reproducible data on the same device over a time-scale of more than one year. Our device architecture helped bring down the conductance fluctuations of the MoS$_2$ channel by orders of magnitude compared to previous reports. The extremely low noise levels in our devices made in possible to detect the generation-recombination noise arising from charge fluctuation between the sulphur-vacancy levels in the band gap and energy-levels at the conductance band-edge. Our work establishes conduction fluctuation spectroscopy as a viable route to quantitatively probe in-gap defect levels in low-dimensional semiconductors.
1907.01830v1
2020-04-11
High-field depinned phase and planar Hall effect in skyrmion-host Gd$_2$PdSi$_3$
For the skyrmion-hosting intermetallic Gd$_2$PdSi$_3$ with centrosymmetric hexagonal lattice and triangular net of rare earth sites, we report a thorough investigation of the magnetic phase diagram. Our work reveals a new magnetic phase with isotropic value of the critical field for all orientations, where the magnetic ordering vector $\mathbf{q}$ is depinned from its preferred directions in the basal plane. This is in contrast to the highly anisotropic behavior of the low field phases, such as the skyrmion lattice (SkL), which are easily destroyed by in-plane magnetic field. The bulk nature of the SkL and of other magnetic phases was evidenced by specific-heat measurements. Resistivity anisotropy, likely originating from partial gapping of the density of states along $\mathbf{q}$ in this RKKY magnet, is picked up via the planar Hall effect (PHE). The PHE confirms the single-$\mathbf{q}$ nature of the magnetic order when the field is in the hexagonal plane, and allows to detect the preferred directions of $\mathbf{q}$. For field aligned perpendicular to the basal plane, several scenarios for the depinned phase (DP), such as tilted conical order, are discussed on the basis of the data.
2004.05385v1
2020-09-11
Electronic nematic states tuned by isoelectronic substitution in bulk FeSe1-xSx
Isoelectronic substitution is an ideal tuning parameter to alter electronic states and correlations in iron-based superconductors. As this substitution takes place outside the conducting Fe planes, the electronic behaviour is less affected by the impurity scattering experimentally and relevant key electronic parameters can be accessed. In this short review, I present the experimental progress made in understanding the electronic behaviour of the nematic electronic superconductors, FeSe1-xSx. A direct signature of the nematic electronic state is in-plane anisotropic distortion of the Fermi surface triggered by orbital ordering effects and electronic interactions that result in multi-band shifts detected by ARPES. Upon sulphur substitution, the electronic correlations and the Fermi velocities decrease in the tetragonal phase. Quantum oscillations are observed for the whole series in ultra-high magnetic fields and show a complex spectra due to the presence of many small orbits. Effective masses associated to the largest orbit display non-divergent behaviour at the nematic end point (x~0.175(5)), as opposed to critical spin-fluctuations in other iron pnictides. Magnetotransport behaviour has a strong deviation from the Fermi liquid behaviour and linear T resistivity is detected at low temperatures inside the nematic phase, where scattering from low energy spin-fluctuations are likely to be present. The superconductivity is not enhanced in FeSe1-xSx and there are no divergent electronic correlations at the nematic end point. These manifestations indicate a strong coupling with the lattice in FeSe1-xSx and a pairing mechanism likely promoted by spin fluctuations.
2009.05523v1
2020-09-23
Superconducting fluctuations in overdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$
Fluctuating superconductivity - vestigial Cooper pairing in the resistive state of a material - is usually associated with low dimensionality, strong disorder or low carrier density. Here, we report single particle spectroscopic, thermodynamic and magnetic evidence for persistent superconducting fluctuations in heavily hole-doped cuprate superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ ($T_c$ = 66~K) despite the high carrier density. With a sign-problem free quantum Monte Carlo calculation, we show how a partially flat band at ($\pi$,0) can help enhance superconducting phase fluctuations. Finally, we discuss the implications of an anisotropic band structure on the phase-coherence-limited superconductivity in overdoped cuprates and other superconductors.
2009.10932v2
2020-09-29
Structural Phase Dependent Giant Interfacial Spin Transparency in W/CoFeB Thin Film Heterostructure
Pure spin current has transfigured the energy-efficient spintronic devices and it has the salient characteristic of transport of the spin angular momentum. Spin pumping is a potent method to generate pure spin current and for its increased efficiency high effective spin-mixing conductance (Geff) and interfacial spin transparency (T) are essential. Here, a giant T is reported in Sub/W(t)/Co20Fe60B20(d)/SiO2(2 nm) heterostructures in \beta-tungsten (\beta-W) phase by employing all-optical time-resolved magneto-optical Kerr effect technique. From the variation of Gilbert damping with W and CoFeB thicknesses, the spin diffusion length of W and spin-mixing conductances are extracted. Subsequently, T is derived as 0.81 \pm 0.03 for the \beta-W/CoFeB interface. A sharp variation of Geff and T with W thickness is observed in consonance with the thickness-dependent structural phase transition and resistivity of W. The spin memory loss and two-magnon scattering effects are found to have negligible contributions to damping modulation as opposed to spin pumping effect which is reconfirmed from the invariance of damping with Cu spacer layer thickness inserted between W and CoFeB. The observation of giant interfacial spin transparency and its strong dependence on crystal structures of W will be important for pure spin current based spin-orbitronic devices.
2009.14143v1
2017-04-20
Accretion powered AGN feedback in the cores of galaxy clusters
Detection of the copious amount of X-ray emission from the dilute hot plasma in galaxy clusters suggests that a substantial fraction of the central intracluster medium (ICM) is cooling radiatively on a time scale much faster than the Hubble time. Theoretical models predict the cooling rate as high as about few hundred to few thousand solar mass per year, which would be then made available for the formation of new stars in the core of these clusters. However, systematic studies of the cores of such clusters failed to detect the expected reservoirs of cooled gas. Thus, the gas in the cores of galaxy clusters is losing substantial amount of energy in the form of X-rays but is not cooling. This in turn point towards the famous cooling flow paradox and hence demands some intermittent heating to balance the cooling over such a long period. Several sources have been suggested to counteract on the cooling of the ICM, however, the AGN feedback appeared to be the most promising and enough energetic source to resist cooling of the ICM in the cores of such clusters. In this presentation I will provide a brief overview on the feedback processes that are involved in the cores of the galaxy clusters with an emphasis on the AGN feedback and its observable signatures.
1704.06047v1
2017-04-23
Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply voltage and the overall power consumption. Adding a ferroelectric negative capacitor to the gate stack of a MOSFET may offer a promising solution to bypassing this fundamental barrier. Meanwhile, two-dimensional (2D) semiconductors, such as atomically thin transition metal dichalcogenides (TMDs) due to their low dielectric constant, and ease of integration in a junctionless transistor topology, offer enhanced electrostatic control of the channel. Here, we combine these two advantages and demonstrate for the first time a molybdenum disulfide (MoS2) 2D steep slope transistor with a ferroelectric hafnium zirconium oxide layer (HZO) in the gate dielectric stack. This device exhibits excellent performance in both on- and off-states, with maximum drain current of 510 {\mu}A/{\mu}m, sub-thermionic subthreshold slope and is essentially hysteresis-free. Negative differential resistance (NDR) was observed at room temperature in the MoS2 negative capacitance field-effect-transistors (NC-FETs) as the result of negative capacitance due to the negative drain-induced-barrier-lowering (DIBL). High on-current induced self-heating effect was also observed and studied.
1704.06865v2
2017-08-04
The cuprate phase diagram and the influence of nanoscale inhomogeneities
The phase diagram associated with the high Tc superconductors is complicated by an array of different ground states. The parent material represents an antiferromagnetic insulator but with doping superconductivity becomes possible with transition temperatures previously thought unattainable. The underdoped region of the phase diagram is dominated by the so-called pseudogap phenomena whereby in the normal state the system mimics superconductivity in its spectra response but does not show the complete loss of resistivity associated with the superconducting state. An understanding of this regime presents one of the great challenges for the field. In the present study we revisit the structure of the phase diagram as determined in photoemission studies. By careful analysis of the role of nanoscale inhomogeneities in the overdoped region we are able to more carefully separate out the gaps due to the pseudogap phenomena from the gaps due to the superconducting transition. Within a mean field description we are thus able to link the magnitude of the gap directly to the Heisenberg exchange interaction term, $J\sum{s_i \cdot s_j}$, contained in the $t-J$ model. This approach provides a clear indication that the pseudogap is that associated with spin singlet formation.
1708.01558v2
2019-03-12
Precision Analysis of Evolved Stars
Evolved stars dominate galactic spectra, enrich the galactic medium, expand to change their planetary systems, eject winds of a complex nature, produce spectacular nebulae and illuminate them, and transfer material between binary companions. While doing this, they fill the HR diagram with diagnostic loops that write the story of late stellar evolution. Evolved stars sometimes release unfathomable amounts of energy in neutrinos, light, kinetic flow, and gravitational waves. During these late-life times, stars evolve complexly, with expansion, convection, mixing, pulsation, mass loss. Some processes have virtually no spatial symmetries, and are poorly addressed with low-resolution measurements and analysis. Even a "simple" question as how to model mass loss resists solution. However, new methods offer increasingly diagnostic tools. Astrometry reveals populations and groupings. Pulsations/oscillations support study of stellar interiors. Optical/radio interferometry enable 2-3d imagery of atmospheres and shells. Bright stars with rich molecular spectra and velocity fields are a ripe opportunity for imaging with high spatial and spectral resolution, giving insight into the physics and modeling of later stellar evolution.
1903.05109v1
2019-04-14
Superconducting Praseodymium Superhydrides
Superhydrides have complex hydrogenic sublattices and are important prototypes for studying metallic hydrogen and high-temperature superconductors. Encouraged by the results on LaH10, in consideration of the differences between La and Pr, Pr-H system is especially worth studying because of the magnetism and valence-band f-electrons in element Pr. Here we successfully synthesized praseodymium superhydrides (PrH9) in laser-heated diamond anvil cells. Synchrotron X-ray diffraction (XRD) analysis demonstrated the presence of previously predicted F43m-PrH9 and unexpected P63/mmc-PrH9 phases. Moreover, Fm3m-PrH3, P4/nmm-PrH(3-{\delta}) and Fm3m-PrH(1+x) were found below 52 GPa. F43m-PrH9 and P63/mmc-PrH9 were stable above 100 GPa in experiment. Experimental studies of electrical resistance in the PrH9 sample showed the emergence of superconducting transition (Tc) below 9K and a dependent Tc on applied magnetic field. Theoretical calculations indicate that magnetic order and electron-phonon interaction coexist in a very close range of pressures in the PrH9 sample which may contribute to its low superconducting temperature Tc. Our results highlight the intimate connections among hydrogenic sublattices, density of states, magnetism and superconductivity in Pr-based superhydrides.
1904.06643v2
2019-08-06
Hump-like structure in Hall signal from SrRuO$_3$ ultra-thin films without inhomogeneous anomalous Hall effect
A controversy arose over the interpretation of the recently observed hump features in Hall resistivity $\rho_{xy}$ from ultra-thin SrRuO$_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later proposed to be from existence of regions with different anomalous Hall effect (AHE). In order to settle down the issue, we performed Hall effect as well as magneto-optic Kerr-effect measurements on 4 unit cell SRO films grown on SrTiO$_3$ (001) substrates. Clear hump features are observed in the measured $\rho_{xy}$, whereas neither hump feature nor double hysteresis loop is seen in the Kerr rotation which should be proportional to the magnetization. In addition, magnetization measurement by superconducting quantum interference device shows no sign of multiple coercive fields. These results show that inhomogeneous AHE alone cannot explain the observed hump behavior in $\rho_{xy}$ data from our SRO ultra-thin films. We found that emergence of the hump structure in $\rho_{xy}$ is closely related to the growth condition, high quality films having clear sign of humps.
1908.02083v1
2019-08-22
High-Pressure Synthesis of Magnetic Neodymium Polyhydrides
The current search for room-temperature superconductivity is inspired by the unique properties of the electron-phonon interaction in metal superhydrides. Encouraged by the recently found highest-$T_C$ superconductor fcc-$LaH_{10}$, here we discover several superhydrides of another lanthanide - neodymium. We identify three novel metallic Nd-H phases at pressure range from 85 to 135 GPa: $I4/mmm$-$NdH_4$, $C2/c$-$NdH_7$, $P6_3/mmc$-$NdH_9$, synthesized by laser-heating metal samples in NH3BH3 media for in situ generation of hydrogen. A lower trihydride $Fm\bar{3}m$-$NdH_3$ is found at pressures from 2 to 52 GPa. $I4/mmm$-$NdH_4$ and $C2/c$-$NdH_7$ are stable from 135 down to 85 GPa, and $P6_3/mmc$-$NdH_9$ from 110 to 130 GPa. Measurements of the electrical resistance of NdH9 demonstrate a possible superconducting transition at ~4.5 K in $P6_3/mmc$-$NdH_9$. Our theoretical calculations predict that all the neodymium hydrides have antiferromagnetic order at pressures below 150 GPa and represent one of the first discovered examples of strongly correlated superhydrides with large exchange spin-splitting in the electron band structure (> 450 meV). The critical N$\'e$el temperatures for new neodymium hydrides are estimated using the mean-field approximation as about 4 K ($NdH_4$), 251 K ($NdH_7$) and 136 K ($NdH_9$).
1908.08304v3
2019-12-27
Localized spin waves at low temperatures in a Cobalt Carbide nanocomposite
We study magnetic, transport and thermal properties of Cobalt carbide nanocomposite with a mixture of Co2C and Co3C phases in 1:1 ratio, with an average particle diameter of 40$\pm 15$ nm. We show that the behavior of the nanocomposite is completely different from that of either Co3C or Co2C. We observed that with decreasing temperature the saturation magnetization MS(T) increases, however, below 100 K, there is a steep rise. A detail analysis shows the increase in MS(T) down to 100 K is explained via the surface spin freezing model. However, below 100 K the steep increase in MS(T) is explained by a finite size effect related to a confinement of spin waves within the nano particles. The measurement of heat capacity shows broad peak at 100 K along with presence of another anomaly at a lower temperature 43 K(=Tex). Resistance measurement in the nanocomposite shows metallic behavior at high T with an unusual anomaly appearing at Tex, which is near the T regime where MS(T) begins to increase steeply. A measurement of the temperature gradients across the sample thickness indicates an abrupt change in thermal conductivity at Tex which suggests a phase transition at Tex. Our results are explained in terms of a transformation from a magnetically coupled state with a continuous spectrum of spin waves into a magnetically decoupled state below 100 K with confined spin waves.
1912.12085v1
2012-06-06
Irreversibility and time relaxation in electrostatic doping of oxide interfaces
Two-dimensional electron gas (2DEG) confined in quantum wells at insulating oxide interfaces have attracted much attention as their electronic properties display a rich physics with various electronics orders such as superconductivity and magnetism. A particularly exciting features of these hetero-structures lies in the possibility to control their electronic properties by electrostatic gating, opening up new opportunities for the development of oxide based electronics. However, unexplained gating hysteresis and time relaxation of the 2DEG resistivity have been reported in some bias range, raising the question of the precise role of the gate voltage. Here we show that in LaTiO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures, above a filling threshold, electrons irreversibly escape out of the well. This mechanism, which is directly responsible for the hysteresis and time relaxation, can be entirely described by a simple analytical model derived in this letter. Our results highlight the crucial role of the gate voltage both on the shape and the filling of the quantum well. They also demonstrate that it is possible to achieve a low-carrier density regime in a semiconductor limit, whereas the high-carrier density regime is intrinsically limited.
1206.1198v1
2018-07-04
Doping effects of Cr on the physical properties of BaFe$_{1.9-x}$Ni$_{0.1}$Cr$_{x}$As$_{2}$
We present a systematic study on the heavily Cr doped iron pnictides BaFe$_{1.9-x}$Ni$_{0.1}$Cr$_{x}$As$_{2}$ by using elastic neutron scattering, high-resolution synchrotron X-ray diffraction (XRD), resistivity and Hall transport measurements. When the Cr concentration increases from $x=$ 0 to 0.8, neutron diffraction experiments suggest that the collinear antiferromagnetism persists in the whole doping range, where the N\'{e}el temperature $T_N$ coincides with the tetragonal-to-orthorhombic structural transition temperature $T_s$, and both of them keeps around 35 K. The magnetic ordered moment, on the other hand, increases within increasing $x$ until $x=$ 0.5, and then decreases with further increasing $x$. Detailed refinement of the powder XRD patterns reveals that the Cr substitutions actually stretch the FeAs$_4$ tetrahedron along the $c-$axis and lift the arsenic height away Fe-Fe plane. Transport results indicate that the charge carriers become more localized upon Cr doping, then changes from electron-type to hole-type around $x=$ 0.5. Our results suggest that the ordered moment and the ordered temperature of static magnetism in iron pnictides can be decoupled and tuned separately by chemical doping.
1807.01612v1
2018-07-26
Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and solid-state qudits have been implemented on the basis of photonic chips and superconducting circuits, respectively. However, there is still a lack of room-temperature qudits with long coherence time and high spectral resolution. The silicon vacancy centers in silicon carbide (SiC) with spin S = 3/2 are quite promising in this respect, but until now they were treated as a canonical qubit system. Here, we apply a two-frequency protocol to excite and image multiple qudit modes in a SiC spin ensemble under ambient conditions. Strikingly, their spectral width is about one order of magnitude narrower than the inhomogeneous broadening of the corresponding spin resonance. By applying Ramsey interferometry to these spin qudits, we achieve a spectral selectivity of 600 kHz and a spectral resolution of 30 kHz. As a practical consequence, we demonstrate absolute DC magnetometry insensitive to thermal noise and strain fluctuations.
1807.10383v1
2018-12-16
Anti-fatigue-fracture hydrogels
The emerging applications of hydrogels in devices and machines require these soft materials to maintain robustness under cyclic mechanical loads. Whereas hydrogels have been made tough to resist fracture under a single cycle of mechanical load, these toughened gels still suffer from fatigue fracture under multiple cycles of loads. The reported fatigue threshold (i.e., the minimal fracture energy at which crack propagation occurs under cyclic loads) for synthetic hydrogels is on the order of 1-100 J/m2, which is primarily associated with the energy required to fracture a single layer of polymer chains per unit area. Here, we demonstrate that the controlled introduction of crystallinity in hydrogels can significantly enhance their fatigue thresholds, since the process of fracturing crystalline domains for fatigue-crack propagation requires much higher energy than fracturing a single layer of polymer chains. The fatigue threshold of polyvinyl alcohol (PVA) with a crystallinity of 18.9 wt.% in the swollen state can exceed 1,000 J/m2. We further develop a strategy to enhance the anti-fatigue-fracture properties of PVA hydrogels, but still maintain their high water contents and low moduli by patterning highly-crystalline regions in the hydrogels. The current work not only reveals an anti-fatigue-fracture mechanism in hydrogels but also provides a practical method to design anti-fatigue-fracture hydrogels for diverse applications.
1812.06403v1
2019-01-15
Use of Cernox thermometers in AC specific heat measurements under pressure
We report on the resistance behavior of bare-chip Cernox thermometers under pressures up to 2 GPa, generated in a piston-cylinder pressure cell. Our results clearly show that Cernox thermometers, frequently used in low-temperature experiments due to their high sensitivity, remain highly sensitive even under applied pressure. We show that these thermometers are therefore ideally suited for measurements of heat capacity under pressure utilizing an ac oscillation technique up to at least 150 K. Our Cernox-based system is very accurate in determining changes of the specific heat as a function of pressure as demonstrated by measurements of the heat capacity on three different test cases: (i) the superconducting transition in elemental Pb (T_{c} = 7.2 K), (ii) the antiferromagnetic transition in the rare-earth compound GdNiGe3 (T_{N} = 26 K) and (iii) the structural/magnetic transition in the iron-pnictide BaFe2As2 (T_{s,N} = 130 K). The chosen examples demonstrate the versatility of our technique for measuring the specific heat under pressure of various condensed matter systems with very different transition temperatures as well as amounts of removed entropy.
1901.05089v2
2019-10-07
High electrical conductivity of single metal-organic chains
Molecular wires are essential components for future nanoscale electronics. However, the preparation of individual long conductive molecules is still a challenge. MMX metal-organic polymers are quasi-one-dimensional sequences of single halide atoms (X) bridging subunits with two metal ions (MM) connected by organic ligands. They are excellent electrical conductors as bulk macroscopic crystals and as nanoribbons. However, according to theoretical calculations, the electrical conductance found in the experiments should be even higher. Here we demonstrate a novel and simple drop-casting procedure to isolate bundles of few to single MMX chains. Furthermore, we report an exponential dependence of the electrical resistance of one or two MMX chains as a function of their length that does not agree with predictions based on their theoretical band structure. We attribute this dependence to strong Anderson localization originated by structural defects. Theoretical modeling confirms that the current is limited by structural defects, mainly vacancies of iodine atoms, through which the current is constrained to flow. Nevertheless, measurable electrical transport along distances beyond 250 nm surpasses that of all other molecular wires reported so far. This work places in perspective the role of defects in one-dimensional wires and their importance for molecular electronics.
1910.02834v1
2020-10-01
Universal limiting transition temperature for the high $T_\mathrm{c}$ superconductors
Since their discovery three decades ago it has emerged that the physics of high-$T_\mathrm{c}$ cuprate superconductors is characterised by multiple temperature scales, and a phenomenology that deviates significantly from the conventional paradigm of superconductivity. Below the "pseudogap" temperature, $T^*$, a range of experiments indicate a reduction in the density of states. Lower in temperature, $T_\mathrm{c}$ marks the onset of a bulk zero-resistance state. Intermediate between these, numerous other temperature boundaries and cross-overs have been identified, often postulated to be associated with fluctuations of some kind. However, for the most part there is little consensus either over their definitions or the physical mechanisms at play. One of these temperature scales is the Nernst onset temperature, $T_\mathrm{onset}$, below which thermoelectric phenomena characteristic of superconductivity are observed. Depending on the material, the difference between $T_\mathrm{onset}$ and $T_\mathrm{c}$ ranges from almost nothing to over 100K. In this paper, we identify $T_\mathrm{onset}$ from published experimental data according to a consistent definition; this reveals a remarkable consistency of behaviour across the whole high-$T_\mathrm{c}$ family, despite the appreciable variations in other parameters. Our analysis suggests that in the cuprates there is an inherent limit to $T_\mathrm{c} \sim 135$K. We compare this behaviour with other strongly-correlated superconductors and propose a unified picture of superconducting fluctuations close to the Mott state.
2010.00572v1
2020-11-17
Shallow Valence Band of Rutile GeO$_2$ and P-type Doping
GeO$_2$ has an $\alpha$-quartz-type crystal structure with a very wide fundamental band gap of 6.6 eV and is a good insulator. Here we find that the stable rutile-GeO$_2$ polymorph with a 4.6 eV band gap has a surprisingly low $\sim$6.8 eV ionization potential, as predicted from the band alignment using first-principles calculations. Because of the short O$-$O distances in the rutile structure containing cations of small effective ionic radii such as Ge$^{4+}$, the antibonding interaction between O 2p orbitals raises the valence band maximum energy level to an extent that hole doping appears feasible. Experimentally, we report the flux growth of $1.5 \times 1.0 \times 0.8$ mm$^3$ large rutile GeO$_2$ single crystals and confirm the thermal stability for temperatures up to $1021 \pm 10~^\circ$C. X-ray fluorescence spectroscopy shows the inclusion of unintentional Mo impurities from the Li$_2$O$-$MoO$_3$ flux, as well as the solubility of Ga in the r-GeO$_2$ lattice as a prospective acceptor dopant. The resistance of the Ga- and Mo-codoped r-GeO$_2$ single crystals is very high at room temperature, but it decreases by 2-3 orders of magnitude upon heating to 300 $^\circ$C, which is attributed to thermally-activated p-type conduction.
2011.08928v1
2020-11-25
Evidence for freezing of charge degrees of freedom across a critical point in CeCoIn$_5$
The presence of a quantum critical point separating two distinct zero-temperature phases is thought to underlie the `strange' metal state of many high-temperature superconductors. The nature of this quantum critical point, as well as a description of the resulting strange metal, are central open problems in condensed matter physics. In large part, the controversy stems from the lack of a clear broken symmetry to characterize the critical phase transition, and this challenge is no clearer than in the example of the unconventional superconductor CeCoIn$_5$. Through Hall effect and Fermi surface measurements of CeCoIn$_5$, in comparison to ab initio calculations, we find evidence for a critical point that connects two Fermi surfaces with different volumes without apparent symmetry-breaking, indicating the presence of a transition that involves an abrupt localization of one sector of the charge degrees of freedom. We present a model for the anomalous electrical Hall resistivity of this material based on the conductivity of valence charge fluctuations.
2011.12951v1
2020-12-03
Effect of ageing on the properties of the W-containing IRIS-TiAl alloy
The effects of ageing at 800 $^\circ$C on the properties of the IRIS alloy (Ti$_{49.9}$Al$_{48}$W$_2$B$_{0.1}$) are studied. The initial microstructure of this alloy densified by Spark Plasma Sintering (SPS) is mainly composed of lamellar colonies which are surrounded by $\gamma$ grains. The evolutions of the alloy strength and creep resistance resulting from this ageing treatment are measured by the related mechanical tests. The microstructural changes are investigated by scanning and transmission electron microscopies and by X-ray diffraction. The main structural evolutions consist in a shrinkage of the lamellar areas and in a precipitation of $\beta_0$ phase, which is accompanied by a moderate segregation of tungsten and a decrease of the $\alpha_2$ lamellar width. However, these evolutions are relatively limited and the microstructural stability is found to result mainly from the low diffusivity of tungsten. Conversely, a moderate effect of this ageing treatment on mechanical properties, at room and high temperatures, is measured. Such experimental results are interpreted and discussed in terms of the microstructural evolutions and of the deformation mechanisms which are activated at different temperatures under various solicitations.
2012.01760v1
2020-12-03
First order transition in trigonal structure ${\textbf{Ca}}{\textbf{Mn}}_{2}{\textbf{P}}_{2}$
We report structural and physical properties of the single crystalline ${\mathrm{Ca}}{\mathrm{Mn}}_{2}{\mathrm{P}}_{2}$. The X-ray diffraction(XRD) results show that ${\mathrm{Ca}}{\mathrm{Mn}}_{2}{\mathrm{P}}_{2}$ adopts the trigonal ${\mathrm{Ca}}{\mathrm{Al}}_{2}{\mathrm{Si}}_{2}$-type structure. Temperature dependent electrical resistivity $\rho(T)$ measurements indicate an insulating ground state for ${\mathrm{Ca}}{\mathrm{Mn}}_{2}{\mathrm{P}}_{2}$ with activation energies of 40 meV and 0.64 meV for two distinct regions, respectively. Magnetization measurements show no apparent magnetic phase transition under 400 K. Different from other ${\mathrm{A}}{\mathrm{Mn}}_{2}{\mathrm{Pn}}_{2}$ (A = Ca, Sr, and Ba, and Pn = P, As, and Sb) compounds with the same structure, heat capacity $C_{\mathrm{p}}(T)$ and $\rho(T)$ reveal that ${\mathrm{Ca}}{\mathrm{Mn}}_{2}{\mathrm{P}}_{2}$ has a first-order transition at $T$ = 69.5 K and the transition temperature shifts to high temperature upon increasing pressure. The emergence of plenty of new Raman modes below the transition, clearly suggests a change in symmetry accompanying the transition. The combination of the structural, transport, thermal and magnetic measurements, points to an unusual origin of the transition.
2012.01863v1
2021-02-10
Electropolishing of single crystal and polycrystalline aluminum to achieve high optical and mechanical surfaces
Electropolishing has found wide application as the final surface treatment of metal products in mechanical engineering and instrumentation, medicine and reflective concentrators for PV cells. It was found that electropolishing (EP) not only reduces the surface roughness and changes its appearance, but improves many operational characteristics as well, such as corrosion resistance, endurance, tensile strength, and many others, and also changes the physicochemical properties, for example, reflectivity, electromagnetic permeability and electronic emission of some ferro-magnetic metals. This fact greatly expands the possibility of using this method in various fields of science and technology. This work is part of a study, examining electro polishing for reducing the crystalline defects adjacent to the surface, thus improving its physical properties, contributing to higher optical efficiency, when used in PV generation and storage devices. Five compositions were examined using different temperature and current density parameters. The polished samples were evaluated using reflectance spectrometry. The solution which was composed of Phosphoric acid - 85%, Acetic acid - 10%, Nitric acid - 5% was found to provide the best results. Another result obtained was that reflectance increased as the current density increased up to 25 A/dm2. Further increasing the current density resulted in deterioration of the surface and reduced reflectance. It was shown that careful lapping and polishing followed by electropolishing using the suggested solution may consist of an adequate treatment for preparing reflective concentrators for PV cells.
2102.05752v1
2021-04-21
Electrically driven programmable phase-change meta-switch reaching 80% efficiency
Despite recent advances in active metaoptics, wide dynamic range combined with high-speed reconfigurable solutions is still elusive. Phase-change materials (PCMs) offer a compelling platform for metasurface optical elements, owing to the large index contrast and fast yet stable phase transition properties. Here, we experimentally demonstrate an in situ electrically-driven reprogrammable metasurface by harnessing the unique properties of a phase-change chalcogenide alloy, Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST), in order to realize fast, non-volatile, reversible, multilevel, and pronounced optical modulation in the near-infrared spectral range. Co-optimized through a multiphysics analysis, we integrate an efficient heterostructure resistive microheater that indirectly heats and transforms the embedded GST film without compromising the optical performance of the metasurface even after several reversible phase transitions. A hybrid plasmonic-PCM meta-switch with a record electrical modulation of the reflectance over eleven-fold (an absolute reflectance contrast reaching 80%), unprecedented quasi-continuous spectral tuning over 250 nm, and switching speed that can potentially reach a few kHz is presented. Our work represents a significant step towards the development of fully integrable dynamic metasurfaces and their potential for beamforming applications.
2104.10381v2
2021-07-01
Solid Source Metal-Organic Molecular Beam Epitaxy of Epitaxial RuO2
A seemingly simple oxide with a rutile structure, RuO2 has been shown to possess several intriguing properties ranging from strain-stabilized superconductivity to a strong catalytic activity. Much interest has arisen surrounding the controlled synthesis of RuO2 films but, unfortunately, utilizing atomically-controlled deposition techniques like molecular beam epitaxy (MBE) has been difficult due to the ultra-low vapor pressure and low oxidation potential of Ru. Here, we demonstrate the growth of epitaxial, single-crystalline RuO2 films on different substrate orientations using the novel solid-source metal-organic (MO) MBE. This approach circumvents these issues by supplying Ru using a pre-oxidized solid metal-organic precursor containing Ru. High-quality epitaxial RuO2 films with bulk-like room-temperature resistivity of 55 micro-ohm-cm were obtained at a substrate temperature as low as 300 C. By combining X-ray diffraction, transmission electron microscopy, and electrical measurements, we discuss the effect of substrate temperature, orientation, film thickness, and strain on the structure and electrical properties of these films. Our results illustrating the use of novel solid-source MOMBE approach paves the way to the atomic-layer controlled synthesis of complex oxides of stubborn metals, which are not only difficult to evaporate but also hard to oxidize.
2107.00193v1
2021-08-02
PID-like active control strategy for electroacoustic resonators to design tunable single-degree-of-freedom sound absorbers
Sound absorption at low frequencies still remains a challenge in both scientific research and engineering practice. Natural porous materials are ineffective in this frequency range, as well as acoustic resonators which present too narrow bandwidth of absorption, thus requiring alternative solutions based on active absorption techniques. In the present work, we propose an active control framework applied on a closed-box loudspeaker to enable the adjustment of the acoustic impedance at the loudspeaker diaphragm. More specifically, based on the proportionality between the pressure inside the enclosure and the axial displacement of the loudspeaker diaphragm at low frequencies, we demonstrate both analytically and experimentally that a PID-like feedback control approach allows tuning independently the compliance, the resistance and the moving mass of the closed-box loudspeaker to implement a prescribed impedance of a single-degree-of-freedom resonator. By considering different control combinations to tailor the resonator characteristics, a perfect absorption (with absorption coefficient equal to 1) is achievable at the target resonance frequency, while enlarging the effective absorption bandwidth. Moreover, the proposed feedback control strategy shows an excellent control accuracy, especially compared to the feedforward-based control formerly reported in the literature. The mismatches between the performance of experimental prototype and the model, likely to result from the control time delay and the inaccuracy in estimating the loudspeaker parameters, can be compensated directly by tuning the control parameters in the control platform. The active resonators implemented through the reported control scheme can be used to build more complex acoustic devices/structures to enable high-efficiency broadband sound absorption or other types of acoustic phenomena such as wavefront shaping.
2108.00765v1
2021-10-29
Supercurrent diode effect and magnetochiral anisotropy in few-layer NbSe$_2$
Nonreciprocal transport refers to charge transfer processes that are sensitive to the bias polarity. Until recently, nonreciprocal transport was studied only in dissipative systems, where the nonreciprocal quantity is the resistance. Recent experiments have, however, demonstrated nonreciprocal supercurrent leading to the observation of a supercurrent diode effect in Rashba superconductors, opening the vision of dissipationless electronics. Here we report on a supercurrent diode effect in NbSe$_2$ constrictions obtained by patterning NbSe$_2$ flakes with both even and odd layer number. The observed rectification is driven by valley-Zeeman spin-orbit interaction. We demonstrate a rectification efficiency as large as 60%, considerably larger than the efficiency of devices based on Rashba superconductors. In agreement with recent theory for superconducting transition metal dichalcogenides, we show that the effect is driven by an out-of-plane magnetic field component. Remarkably, we find that the effect becomes field-asymmetric in the presence of an additional in-plane field component transverse to the current direction. Supercurrent diodes offer a further degree of freedom in designing superconducting quantum electronics with the high degree of integrability offered by van der Waals materials.
2110.15752v2
2021-11-28
CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications
We report a combined theoretical and experimental study of a novel quaternary Heusler system CoFeVSb from the view point of room temperature spintronics and thermoelectric applications. It crystallizes in cubic structure with small DO$_3$-type disorder. The presence of disorder is confirmed by room temperature synchrotron X-ray diffraction(XRD) and extended X-ray absorption fine structure (EXAFS) measurements. Magnetization data reveal high ordering temperature with a saturation magnetization of 2.2 $\mu_B$/f.u. Resistivity measurements reflect half-metallic nature. Double hysteresis loop along with asymmetry in the magnetoresistance(MR) data reveals room temperature spin-valve feature, which remains stable even at 300 K. Hall measurements show anomalous behavior with significant contribution from intrinsic Berry phase. This compound also large room temperature power factor ($\sim0.62$ mWatt/m/K$^{2}$) and ultra low lattice thermal conductivity ($\sim0.4$ W/m/K), making it a promising candidate for thermoelectric application. Ab-initio calculations suggest weak half-metallic behavior and reduced magnetization (in agreement with experiment) in presence of DO$_3$ disorder. We have also found an energetically competing ferromagnetic FM)/antiferromagnetic (AFM) interface structure within an otherwise FM matrix: one of the prerequisites for spin valve behavior. Coexistence of so many promising features in a single system is rare, and hence CoFeVSb gives a fertile platform to explore numerous applications in future.
2111.14081v1
2021-12-16
Constrained multi-objective optimization of process design parameters in settings with scarce data: an application to adhesive bonding
Adhesive joints are increasingly used in industry for a wide variety of applications because of their favorable characteristics such as high strength-to-weight ratio, design flexibility, limited stress concentrations, planar force transfer, good damage tolerance, and fatigue resistance. Finding the optimal process parameters for an adhesive bonding process is challenging: the optimization is inherently multi-objective (aiming to maximize break strength while minimizing cost), constrained (the process should not result in any visual damage to the materials, and stress tests should not result in failures that are adhesion-related), and uncertain (testing the same process parameters several times may lead to different break strengths). Real-life physical experiments in the lab are expensive to perform. Traditional evolutionary approaches (such as genetic algorithms) are then ill-suited to solve the problem, due to the prohibitive amount of experiments required for evaluation. Although Bayesian optimization-based algorithms are preferred to solve such expensive problems, few methods consider the optimization of more than one (noisy) objective and several constraints at the same time. In this research, we successfully applied specific machine learning techniques (Gaussian Process Regression) to emulate the objective and constraint functions based on a limited amount of experimental data. The techniques are embedded in a Bayesian optimization algorithm, which succeeds in detecting Pareto-optimal process settings in a highly efficient way (i.e., requiring a limited number of physical experiments).
2112.08760v3
2022-01-08
Are Heavy Fermion Strange Metals Planckian?
Strange metal behavior refers to a linear temperature dependence of the electrical resistivity at temperatures below the Mott-Ioffe-Regel limit. It is seen in numerous strongly correlated electron systems, from the heavy fermion compounds, via transition metal oxides and iron pnictides, to magic angle twisted bi-layer graphene, frequently in connection with unconventional or "high temperature" superconductivity. To achieve a unified understanding of these phenomena across the different materials classes is a central open problem in condensed matter physics. Tests whether the linear-in-temperature law might be dictated by Planckian dissipation - scattering with the rate $\sim k_{\rm B}T/\hbar$, are receiving considerable attention. Here we assess the situation for strange metal heavy fermion compounds. They allow to probe the regime of extreme correlation strength, with effective mass or Fermi velocity renormalizations in excess of three orders of magnitude. Adopting the same procedure as done in previous studies, i.e., assuming a simple Drude conductivity with the above scattering rate, we find that for these strongly renormalized quasiparticles, scattering is much weaker than Planckian, implying that the linear temperature dependence should be due to other effects. We discuss implications of this finding and point to directions for further work.
2201.02820v1
2022-03-04
Character of the "normal state" of the nickelate superconductors
The occurrence of superconductivity in proximity to various strongly correlated phases of matter has drawn extensive focus on their normal state properties, to develop an understanding of the state from which superconductivity emerges. The recent finding of superconductivity in layered nickelates raises similar interests. However, transport measurements of doped infinite-layer nickelate thin films have been hampered by materials limitations of these metastable compounds - in particular, a relatively high density of extended defects. Here, by moving to a substrate (LaAlO$_{3}$)$_{0.3}$(Sr$_{2}$TaAlO$_{6}$)$_{0.7}$ which better stabilizes the growth and reduction conditions, we can synthesize the doping series of Nd$_{1-x}$Sr$_{x}$NiO$_{2}$ essentially free from extended defects. This enables the first examination of the 'intrinsic' temperature and doping dependent evolution of the transport properties. The normal state resistivity exhibits a low-temperature upturn in the underdoped regime, linear behavior near optimal doping, and quadratic temperature dependence for overdoping. This is strikingly similar to the copper oxides, despite key distinctions - namely the absence of an insulating parent compound, multiband electronic structure, and a Mott-Hubbard orbital alignment rather than the charge-transfer insulator of the copper oxides. These results suggest an underlying universality in the emergent electronic properties of both superconducting families.
2203.02580v1
2022-03-22
Prediction of resistance induced by surface complexity in lubricating layers: Application to super-hydrophobic surfaces
Super Hydrophobic (SH) coatings are widely used to mitigate drag in various applications. Numerous studies have demonstrated that the beneficial wall-slip effect produced by these materials disappears in laminar flow regimes. The main mechanisms considered to be behind the decrease in performance are Marangoni-induced stresses and air/liquid interface deformation. In the present study, a new mechanism is proposed to explain the loss of performances of SH-surfaces in laminar flow regimes. Here we consider the flow of air inside the plastron and the associated momentum loses induced by roughness elements with different geometric characteristics. The effects of air motion within the plastron is coupled to the outer fluid with a homogenised boundary condition approach. To this end, numerical simulations at the scale of the roughness element were conducted as a function of the porosity and the tortuosity of the domain to determine the slip velocity at the air-liquid interface. The homogenised boundary condition is then implemented in a theoretical model for the outer flow to compute drag on SH-spheres at low $Re$ numbers. Experiments of laminar SH falling spheres indicate that high values of the tortuosity and low values of porosity lead to a loss of performances when considering drag reduction. As anticipated, a 3D printed sphere with low tortuosity and similar porosity demonstrated near-optimal drag reductions. A comparative study between the predicted values and experiments shows that the homogenised model is able to accurately predict the drag on SH surfaces for values of the porosity and tortuosity estimated from microscopy images of the SH textured surface.
2203.12039v1
2022-04-06
Thermal activation of low-density Ga implanted in Ge
The nuclear spins of low-density implanted Ga atoms in Ge are interesting candidates for solid state-based qubits. To date, activation studies of implanted Ga in Ge have focused on high densities. Here we extend activation studies into the low-density regime. We use spreading resistance profiling and secondary ion mass spectrometry to derive electrical activation of Ga ions implanted into Ge as a function of rapid thermal anneal temperature and implant density. We show that for our implant conditions the activation is best for anneal temperatures between 400 and 650 $^\circ$C, with a maximum activation of 64% at the highest fluence. Below 400 $^\circ$C, remaining implant damage results in defects that act as superfluous carriers, and above 650 $^\circ$C, surface roughening and loss of Ga ions are observed. The activation increased monotonically from 10% to 64% as the implant fluence increased from $6\times10^{10}$ to $6\times10^{12}$ cm$^{-2}$. The results provide thermal anneal conditions to be used for initial studies of using low-density Ga atoms in Ge as nuclear spin qubits.
2204.02878v1
2022-05-05
Intrinsic spin Hall torque in a moire Chern magnet
In spin torque magnetic memories, electrically actuated spin currents are used to switch a magnetic bit. Typically, these require a multilayer geometry including both a free ferromagnetic layer and a second layer providing spin injection. For example, spin may be injected by a nonmagnetic layer exhibiting a large spin Hall effect, a phenomenon known as spin-orbit torque. Here, we demonstrate a spin-orbit torque magnetic bit in a single two-dimensional system with intrinsic magnetism and strong Berry curvature. We study AB-stacked MoTe2/WSe2, which hosts a magnetic Chern insulator at a carrier density of one hole per moire superlattice site. We observe hysteretic switching of the resistivity as a function of applied current. Magnetic imaging using a superconducting quantum interference device reveals that current switches correspond to reversals of individual magnetic domains. The real space pattern of domain reversals aligns precisely with spin accumulation measured near the high-Berry curvature Hubbard band edges. This suggests that intrinsic spin- or valley-Hall torques drive the observed current-driven magnetic switching in both MoTe2/WSe2 and other moire materials. The switching current density of 10^3 Amps per square centimeter is significantly less than reported in other platforms paving the way for efficient control of magnetic order.
2205.02823v1
2022-06-02
A multi-fidelity approach coupling parameter space reduction and non-intrusive POD with application to structural optimization of passenger ship hulls
Nowadays, the shipbuilding industry is facing a radical change towards solutions with a smaller environmental impact. This can be achieved with low emissions engines, optimized shape designs with lower wave resistance and noise generation, and by reducing the metal raw materials used during the manufacturing. This work focuses on the last aspect by presenting a complete structural optimization pipeline for modern passenger ship hulls which exploits advanced model order reduction techniques to reduce the dimensionality of both input parameters and outputs of interest. We introduce a novel approach which incorporates parameter space reduction through active subspaces into the proper orthogonal decomposition with interpolation method. This is done in a multi-fidelity setting. We test the whole framework on a simplified model of a midship section and on the full model of a passenger ship, controlled by 20 and 16 parameters, respectively. We present a comprehensive error analysis and show the capabilities and usefulness of the methods especially during the preliminary design phase, finding new unconsidered designs while handling high dimensional parameterizations.
2206.01243v3
2022-06-08
Dielectric properties and impedance spectroscopy of NASICON type Na$_3$Zr$_2$Si$_2$PO$_{12}$
We report the temperature dependent dielectric properties and impedance spectroscopy investigation of Na$_3$Zr$_2$Si$_2$PO$_{12}$ in the frequency range of 20 Hz--2 MHz. The Rietveld refinement of x-ray diffraction pattern confirms the monoclinic phase with C2/c space group. The {\it d.c.} resistivity behavior shows its strong insulating nature at low temperatures, and follows Arrhenius law of thermal conduction with an activation energy of 0.68 eV. The decrease in electric permittivity ($\epsilon_r$) with frequency is explained based on the space polarization mechanism and its increment with temperature by thermal activation of charge carriers. The dielectric loss (D=tan$\delta$) peak follows the Arrhenius law of thermal activation with an energy of 0.25 eV. We observe an enhancement in {\it a.c.} conductivity with frequency and temperature due to the decrease in the activation energy, which results in enhancing the conduction between defect states. Further, we observe an abrupt increase in the {\it a.c.} conductivity at high frequencies, which is explained using the universal Jonschers power law. The analysis of {\it a.c.} conductivity shows two types of conduction mechanisms namely correlated barrier hopping and non-overlapping small polaron tunnelling in the measured temperature range. The imaginary part of the electric modulus confirms the non-Debye type relaxation in the sample. The shifting of the relaxation peak towards higher frequency side with an increase in temperature ensures its thermally activated nature. The scaling behavior of the electric modulus shows similar type of relaxation over the measured temperature range. The combined analysis of electric modulus and impedance with frequency shows the short-range mobility of charge carriers.
2206.03668v1
2022-11-18
Synthesis of infinite-layer nickelates and influence of the capping-layer on magnetotransport
The recent discovery of a zero-resistance state in nickel-based compounds has generated a re-excitement about the long-standing problem in condensed matter of high-critical-temperature superconductivity, in light of the analogies between infinite-layer nickelates and cuprates. However, despite some formal valence and crystal symmetry analogies, the electronic properties of infinite-layer nickelates are remarkably original accounting, among other properties, of a unique Nd5d-Ni3d hybridization. This designates infinite-layer nickelates as a new class of oxide superconductors which should be considered on their own. Here we report about Nd1-xSrxNiO2 (x = 0, 0.05 and 0.2) thin films synthesized with and without a SrTiO3 capping-layer, showing very smooth and step-terraced surface morphologies. Angle-dependent anisotropic magnetoresistance measurements performed with a magnetic field rotating in-plane or out-of-plane with respect to the sample surface, rendered important information about the magnetic properties of undoped SrTiO3-capped and uncapped samples. The results point at a key role of the capping-layer in controlling the magnitude and the anisotropy of the anisotropic magnetoresistance properties. We discuss this control in terms of a combined effect between the Nd-Ni hybridization and an intra-atomic exchange coupling between the Nd-4f and Nd-5d states, the latter essentially contributing to the (magneto)transport. Further studies foresee the influence of the capping layer on infinite-layer nickelates with no magnetic rare-earth.
2211.10251v1
2022-12-12
Unconventional localization of electrons inside of a nematic electronic phase
The magnetotransport behaviour inside the nematic phase of bulk FeSe reveals unusual multiband effects that cannot be reconciled with a simple two-band approximation proposed by surface-sensitive spectroscopic probes. In order to understand the role played by the multiband electronic structure and the degree of two-dimensionality we have investigated the electronic properties of exfoliated flakes of FeSe by reducing their thickness. Based on magnetotransport and Hall resistivity measurements, we assess the mobility spectrum that suggests an unusual asymmetry between the mobilities of the electrons and holes with the electron carriers becoming localized inside the nematic phase. Quantum oscillations in magnetic fields up to 38 T indicate the presence of a hole-like quasiparticle with a lighter effective mass and a quantum scattering time three times shorter, as compared with bulk FeSe. The observed localization of negative charge carriers by reducing dimensionality can be driven by orbitally-dependent correlation effects, enhanced interband spin-fluctuations or a Lifshitz-like transition which affect mainly the electron bands. The electronic localization leads to a fragile two-dimensional superconductivity in thin flakes of FeSe, in contrast to the two-dimensional high-Tc induced with electron doping via dosing or using a suitable interface.
2212.06196v1
2023-01-19
Ab initio comparison of spin-transport properties in MgO-spaced ferrimagnetic tunnel junctions based on Mn$_3$Ga and Mn$_3$Al
We report on first-principles spin-polarised quantum transport calculations (from NEGF+DFT) in MgO-spaced magnetic tunnel junctions (MTJs) based on two different Mn-based Heusler ferrimagnetic metals, namely Mn$_3$Al and Mn$_3$Ga in their tetragonal DO$_{22}$ phase. The former is a fully compensated half-metallic ferrimagnet, while the latter is a low-moment high-spin-polarisation ferrimagnet, both with a small lattice mismatch from MgO. In identical symmetric and asymmetric interface reconstructions across a 3-monolayer thick MgO barrier for both ferrimagets, the linear response (low-voltage) spin-transfer torque (STT) and tunneling magneto-resistance (TMR) effects are evaluated. A larger staggered in-plane STT is found in the Mn$_3$Ga case, while the STT in Mn$_3$Al vanishes quickly away from the interface (similarly to STT in ferromagnetic MTJs). The roles are reversed for the TMR, which is practically 100\% in the half-metallic Mn$_3$Al-based MTJs (using the conservative definition) as opposed to 60\% in the Mn$_3$Ga case. The weak dependence on the exact interface reconstruction would suggest Mn$_3$Ga-Mn$_3$Al solid solutions as a possible route towards optimal trade-off of STT and TMR in the low-bias, low-temperature transport regime.
2301.08300v1
2023-05-09
Influence of Shape on Heteroaggregation of Model Microplastics: A Simulation Study
Nano- and microplastics are a growing threat for the environment, especially in aqueous habitats. For assessing the influence on the ecosystem and possible solution strategies, it is necessary to investigate the fate of microplastics (MP) in the environment. MPs are typically surrounded by natural organic matter, which can cause them to aggregate. However, the effect of MP shape and flow conditions on this heteroaggregation is not well understood. To address this gap, we perform simulations of heteroaggregation of different MP shapes with smaller spherical organic matter. We demonstrate that the shape had a strong impact on the aggregate structure. MPs with mostly smooth surfaces formed compact structures with a large number of neighbors with weak connection strength and a higher fractal dimension. MPs with edges and corners aggregated into more fractal structures with fewer neighbors, but with stronger connections. Using MPCD, we investigated aggregates under shear flow. The critical shear rate at which the aggregates break up is much larger for spherical and rounded cube MPs, i.e, the compact aggregate structure of spheres outweighs their weaker connection strength. Most notably, the rounded cube exhibited unexpectedly high resistance against breakup under shear. We attribute this to being fairly compact due to weaker, flexible neighbor connections, which are still strong enough to prevent particles to break off during shear flow. Irrespective of the stronger connections between neighbouring MPs, the fractal aggregates of cubes break up at lower shear rates. We find that cube aggregates reduced their radius of gyration significantly, indicating restructuring, while most neighbor connections were kept intact. Aggregates of spheres, however, kept their overall size while undergoing local rearrangements, that broke a significant portion of their neighbor interactions.
2305.05453v1
2023-06-08
Epitaxial thin films of binary Eu-compounds close to a valence transition
Intermetallic binary compounds of europium reveal a variety of interesting phenomena due to the interconnection between two different magnetic and 4f electronic (valence) states, which are particularly close in energy. The valence states or magnetic properties are thus particularly sensitive to strain-tuning in these materials. Consequently, we grew epitaxial EuPd$_2$ (magnetic Eu$^{2+}$) and EuPd$_3$ (nonmagnetic Eu$^{3+}$) thin films on MgO(001) substrates using molecular beam epitaxy. Ambient X-ray diffraction confirms an epitaxial relationship of cubic Laves-type (C15) EuPd$_2$ with an (111)-out-of-plane orientation, whereby eight distinct in-plane crystallographic domains develop. For simple cubic EuPd$_3$ two different out-of-plane orientations can be obtained by changing the substrate annealing temperature under ultra-high vacuum conditions from 600 {\deg}C to 1000 {\deg}C for one hour. A small resistance minimum evolves for EuPd$_3$ thin films grown with low temperature substrate annealing, which was previously found even in single crystals of EuPd$_3$ and might be attributed to a Kondo or weak localization effect. Absence of influence of an applied magnetic fields and magnetotransport measurements suggest a nonmagnetic ground state for EuPd$_3$ thin films, i. e., a purely trivalent Eu valence, as found in EuPd$_3$ single crystals. For EuPd$_2$ magnetic ordering below ~72 K is observed, quite similar to single crystal behavior. Field dependent measurements of the magnetoresistance and the Hall effect show hysteresis effects below ~0.4 T and an anomalous Hall effect below ~70 K, which saturates around 1.4 T, thus proving a ferromagnetic ground state of the divalent Eu.
2306.05355v2
2023-06-26
Phase purity and surface morphology of high-Jc superconducting Bi2Sr2Ca1Cu2O8+δ thin films
Bi2Sr2Ca1Cu2O8+d (Bi-2212) thin films with thicknesses less than 50 nm (<20 unit cells) are grown by pulsed laser deposition (PLD) onto (001) LaAlO3 (LAO) single crystal substrates. Phase-pure and smooth c-axis oriented Bi-2212 films with optimal oxygen doping, critical temperature Tc0 up to 86 K, and critical current density Jc(60 K) above 1 MA/cm2 are obtained for samples that are annealed in situ at temperatures below 700 {\deg}C. At higher temperature Bi-2212 films on LAO substrates partially decompose to non-superconducting impurity phases, while films on MgO and SrTiO3 substrates are stable. The broadening of Tc of the metal-to-superconductor resistive phase transition in magnetic fields is much larger for thin films of Bi-2212 as compared to YBa2Cu3O7. The magnetic field-induced suppression of Tc0 is stronger for Bi-2212 films containing impurity phases as compared to the phase-pure Bi-2212 films. The degradation of LAO substrate crystals after several steps of deposition and chemical removal of the Bi-2212 layer is investigated. New, commercially prepared substrates provide Bi-2212 films with smallest surface roughness (3 nm) and strong out-of-plane texture. However, thin films of almost the same quality are obtained on re-used LAO substrates that are mechanically polished after the chemical etching.
2306.14481v1
2023-07-12
Coexistence of Competing Microbial Strains under Twofold Environmental Variability and Demographic Fluctuations
Microbial populations generally evolve in volatile environments, under conditions fluctuating between harsh and mild, e.g. as the result of sudden changes in toxin concentration or nutrient abundance. Environmental variability thus shapes the long-time population dynamics, notably by influencing the ability of different strains of microorganisms to coexist. Inspired by the evolution of antimicrobial resistance, we study the dynamics of a community consisting of two competing strains subject to twofold environmental variability. The level of toxin varies in time, favouring the growth of one strain under low drug concentration and the other strain when the toxin level is high. We also model time-changing resource abundance by a randomly switching carrying capacity that drives the fluctuating size of the community. While one strain dominates in a static environment, we show that species coexistence is possible in the presence of environmental variability. By computational and analytical means, we determine the environmental conditions under which long-lived coexistence is possible and when it is almost certain. Notably, we study the circumstances under which environmental and demographic fluctuations promote, or hinder, the strains coexistence. We also determine how the make-up of the coexistence phase and the average abundance of each strain depend on the environmental variability.
2307.06314v3
2023-07-31
Synthesis of possible room temperature superconductor LK-99:Pb$_9$Cu(PO$_4$)$_6$O
The quest for room-temperature superconductors has been teasing scientists and physicists, since its inception in 1911 itself. Several assertions have already been made about room temperature superconductivity but were never verified or reproduced across the labs. The cuprates were the earliest high transition temperature superconductors, and it seems that copper has done the magic once again. Last week, a Korean group synthesized a Lead Apatite-based compound LK-99, showing a T$_c$ of above 400$^\circ$K. The signatures of superconductivity in the compound are very promising, in terms of resistivity (R = 0) and diamagnetism at T$_c$. Although, the heat capacity (C$_p$) did not show the obvious transition at T$_c$. Inspired by the interesting claims of above room temperature superconductivity in LK-99, in this article, we report the synthesis of polycrystalline samples of LK-99, by following the same heat treatment as reported in [1,2] by the two-step precursor method. The phase is confirmed through X-ray diffraction (XRD) measurements, performed after each heat treatment. The room temperature diamagnetism is not evidenced by the levitation of a permanent magnet over the sample or vice versa. Further measurements for the confirmation of bulk superconductivity on variously synthesized samples are underway. Our results on the present LK-99 sample, being synthesized at 925$^\circ$C, as of now do not approve the appearance of bulk superconductivity at room temperature. Further studies with different heat treatments are though, yet underway.
2307.16402v2
2023-10-11
Temperature-Dependent Collective Excitations in a Three-Dimensional Dirac System ZrTe$_{5}$
Zirconium pentatelluride (ZrTe$_{5}$), a system with a Dirac linear band across the Fermi level and anomalous transport features, has attracted considerable research interest for it is predicted to be located at the boundary between strong and weak topological insulators separated by a topological semimetal phase. However, the experimental verification of the topological phase transition and the topological ground state in ZrTe$_{5}$ is full of controversies, mostly due to the difficulty of precisely capturing the small gap evolution with single-particle band structure measurements. Alternatively, the collective excitations of electric charges, known as plasmons, in Dirac systems exhibiting unique behavior, can well reflect the topological nature of the band structure. Here, using reflective high-resolution electron energy loss spectroscopy (HREELS), we investigate the temperature-dependent collective excitations of ZrTe$_{5}$, and discover that the plasmon energy in ZrTe$_{5}$ is proportional to the $1/3$ power of the carrier density $n$, which is a unique feature of plasmons in three-dimensional Dirac systems. Based on this conclusion, the origin of the resistivity anomaly of ZrTe$_{5}$ can be attributed to the temperature-dependent chemical potential shift in extrinsic Dirac semimetals.
2310.07232v2
2023-10-19
Comparison of the Resistivities of Nanostructured Films Made from Silver, Copper-Silver and Copper Nanoparticle and Nanowire Suspensions
Spray deposition and inkjet printing of various nanostructures are emerging complementary methods for creating conductive coatings on different substrates. In comparison to established deposition techniques like vacuum metal coating and lithography-based metallization processes, spray deposition and inkjet printing benefit from significantly simplified equipment. However, there are number of challenges related to peculiar properties and behaviour of nanostructures that require additional studies. In present work, we investigate electroconductive properties and sintering behaviour of thin films produced from nanostructures of different metals (Ag, Cu and Cu-Ag) and different shapes (nanowires and spherical nanoparticles), and compare them to the reference Ag and Cu magnetron deposited films. Synthesized nanostructures were studied with transmission electron microscopy. Morphology and crystallinity of produced metal films were studied with scanning electron microscopy and X-ray diffraction. The electrical parameters were measured by the van der Pauw method. All nanowires-based films provided high conductivity and required only modest thermal treatment (200 C). To achieve sufficient sintering and conductivity of nanoparticles-based films, higher temperatures are required (300 C for Ag nanoparticles and 350 C for Cu and Cu-Ag nanoparticles). Additionally, stability of nanowires was studied by annealing the samples in vacuum conditions inside a scanning electron microscope at 500 C.
2310.12506v1
2023-11-01
Active Noise Control Portable Device Design
While our world is filled with its own natural sounds that we can't resist enjoying, it is also chock-full of other sounds that can be irritating, this is noise. Noise not only influences the working efficiency but also the human's health. The problem of reducing noise is one of great importance and great difficulty. The problem has been addressed in many ways over the years. The current methods for noise reducing mostly rely on the materials and transmission medium, which are only effective to some extent for the high frequency noise. However, the effective reduction noise method especially for low frequency noise is very limited. Here we come up with a noise reduction system consist of a sensor to detect the noise in the environment. Then the noise will be sent to an electronic control system to process the noise, which will generate a reverse phase frequency signal to counteract the disturbance. Finally, the processed smaller noise will be broadcasted by the speaker. Through this smart noise reduction system, even the noise with low-frequency can be eliminated. The system is also integrated with sleep tracking and music player applications. It can also remember and store settings for the same environment, sense temperature, and smart control of home furniture, fire alarm, etc. This smart system can transfer data easily by Wi-Fi or Bluetooth and controlled by its APP. In this project, we will present a model of the above technology which can be used in various environments to prevent noise pollution and provide a solution to the people who have difficulties finding a peaceful and quiet environment for sleep, work or study.
2311.00535v1
2023-11-13
Superconductivity in trilayer nickelate La4Ni3O10 under pressure
Nickelate superconductors have attracted a great deal of attention over the past few decades due to their similar crystal and electronic structures with high-temperature cuprate superconductors. Here, we report the superconductivity in a pressurized Ruddlesden-Popper phase single crystal, La4Ni3O10 (n = 3), and its interplay with the density wave order in the phase diagram. With increasing pressure, the density wave order as indicated by the anomaly in the resistivity is progressively suppressed, followed by the emergence of the superconductivity around 25 K. Our angle-resolved photoemission spectroscopy measurements reveal that the electronic structure of La4Ni3O10 is very similar to that of La3Ni2O7, suggesting unified electronic properties of nickelates in Ruddlesden-Popper phases. Moreover, theoretical analysis unveils that antiferromagnetic (AFM) super-exchange interactions can serve as the effective pairing interaction for the emergence of superconductivity (SC) in pressurized La4Ni3O10. Our research provides a new platform for the investigation of the unconventional superconductivity mechanism in Ruddlesden-Popper trilayer perovskite nickelates.
2311.07423v2
2023-11-15
Quantification of cell contractile behavior based on non-destructive macroscopic measurement of tension forces on bioprinted hydrogel
Contraction assay based on surface measurement have been widely used to evaluate cell contractility in 3D models. This method is straightforward and requires no specific equipment, but it does not provide quantitative data about contraction forces generated by cells. We expanded this method with a new biomechanical model, based on the work-energy theorem, to provide non-destructive longitudinal monitoring of contraction forces generated by cells in 3D.We applied this method on hydrogels seeded with either fibroblasts or osteoblasts. Hydrogel mechanical characteristics were modulated to enhance (condition HCA$_{High}$: hydrogel contraction assay high contraction) or limit (condition HCA$_{Low}$: hydrogel contraction assay low contraction) cell contractile behaviors. Macroscopic measures were further correlated with cell contractile behavior and descriptive analysis of their physiology in response to different mechanical environments. Fibroblasts and osteoblasts contracted their matrix up to 47% and 77% respectively. Contraction stress peaked at day 5 with 1.1 10$^{-14}$Pa for fibroblasts and 3.5 10$^{-14}$Pa for osteoblasts, which correlated with cell attachment and spreading. Negligible contraction was seen in HCA$_{Low}$. Both fibroblasts and osteoblasts expressed $\alpha$-SMA contractile fibers in HCA$_{High}$ and HCA$_{Low}$. Failure to contract HCA$_{Low}$ was attributed to increased cross-linking and resistance to proteolytic degradation of the hydrogel.
2311.08773v1
2023-12-15
Plasma-enhanced atomic layer deposition of titanium nitride for superconducting devices
This study presents a comprehensive investigation into the exceptional superconducting attributes of titanium nitride (TiN) achieved through plasma-enhanced atomic layer deposition (PEALD) on both planar and intricate three-dimensional (3D) structures. We introduced an additional substrate biasing cycle to densify the film and remove ligand residues, augmenting the properties while minimizing impurities. While reactive-sputtered TiN films exhibit high quality, our technique ensures superior uniformity by consistently maintaining a desired sheet resistance greater than 95 percent across a 6inch wafer, a critical aspect for fabricating extensive arrays of superconducting devices and optimizing wafer yield. Moreover, our films demonstrate exceptional similarity to conventional reactive-sputtered films, consistently reaching a critical temperature (Tc) of 4.35 K with a thickness of around 40 nm. This marks a notable achievement compared to previously reported ALD-based superconducting TiN. Using the same process as for planar films, we obtained Tc for aspect ratios (ARs) ranging from 2 to 40, observing a Tc of approximately 2 K for ARs between 2 and 10.5. We elucidate the mechanisms contributing to the limitations and degradation of superconducting properties over these aggressive 3D structures. Our results seamlessly align with both current and next-generation superconducting technologies, meeting stringent criteria for thin-film constraints, large-scale deposition, conformality, 3D integration schemes, and yield optimization.
2312.09984v1
2023-12-19
On the role of Grain Boundary Character in the Stress Corrosion Cracking of Nanoporous Gold Thin Films
For its potential as a catalyst, nanoporous gold (NPG) prepared through dealloying of bulk Ag-Au alloys has been extensively investigated. NPG thin films can offer ease of handling, better tunability of the chemistry and microstructure of the nanoporous structure, and represent a more sustainable usage of scarce resources. These films are however prone to intergranular cracking during dealloying, limiting their stability and potential applications. Here, we set out to systematically investigate the grain boundaries in Au28Ag72 thin films. We observe that a sample synthesized at 400 {\deg}C is at least 2.5 times less prone to cracking compared to a sample synthesized at room temperature. This correlates with a higher density of coincident site lattice grain boundaries, especially the density of coherent sigma 3, increased, which appear resistant against cracking. Nanoscale compositional analysis of random high-angle grain boundaries reveals prominent Ag enrichment up to 77 at.%, whereas sigma 3 coherent twin boundaries show Au enrichment of up to 30 at.%. The misorientation and the chemistry of grain boundaries hence affect their dealloying behavior, which in turn controls the cracking, and the possible longevity of NPG thin films for application in electrocatalysis.
2312.12235v1
2024-02-26
Electronic phase transitions and superconductivity in ferroelectric Sn$_2$P$_2$Se$_6$ under pressure
Since there is both strong electron-phonon coupling during a ferroelectric/FE transition and superconducting/SC transition, it has been an important topic to explore superconductivity from the FE instability. Sn$_2$P$_2$Se$_6$ arouses broad attention due to its unique FE properties. Here, we reported the electronic phase transitions and superconductivity in this compound based on high-pressure electrical transport measurement, optical absorption spectroscopy and Raman based structural analysis. Upon compression, the conductivity of Sn$_2$P$_2$Se$_6$ was elevated monotonously, an electronic phase transition occurred near 5.4 GPa, revealed by optical absorption spectroscopy, and the insulating state is estimated to be fully suppressed near 15 GPa. Then, it started to show the signature of superconductivity near 15.3 GPa. The zero-resistance state was presented from 19.4 GPa, and the superconductivity was enhanced with pressure continuously. The magnetic field effect further confirmed the SC behavior and this compound had a $T_c$ of 5.4 K at 41.8 GPa with a zero temperature upper critical field of 6.55 T. The Raman spectra confirmed the structural origin of the electronic transition near 5.4 GPa, which should due to the transition from the paraelectric phase to the incommensurate phase, and suggested a possible first-order phase transition when the sample underwent the semiconductor-metal transition near 15 GPa. This work demonstrates the versatile physical properties in ferroelectrics and inspires the further investigation on the correlation between FE instability and SC in M$_2$P$_2$X$_6$ family.
2402.16427v1
2024-02-29
Anomalous frequency and temperature dependent scattering in the dilute metallic phase in lightly doped-SrTiO$_3$
The mechanism of superconductivity in materials with aborted ferroelectricity and the emergence of a dilute metallic phase in systems like doped-SrTiO$_3$ are outstanding issues in condensed matter physics. This dilute metal has features both similar and different to those found in the normal state of other unconventional superconductors. We have investigated the optical properties of the dilute metallic phase in doped-SrTiO$_3$ using THz time-domain spectroscopy. At low frequencies the THz response exhibits a Drude-like form as expected for typical metal-like conductivity. We observed the frequency and temperature dependencies to the low energy scattering rate $\Gamma(\omega, T) \propto (\hbar\omega)^2 + (p \pi k_BT)^2 $ expected in a conventional Fermi liquid, despite the fact that densities are too small to allow current decay through electron-electron scattering. However we find the lowest known $p$ values of 0.39-0.72. As $p$ is 2 in a canonical Fermi liquid and existing models based on energy dependent elastic scattering bound $p$ from below to 1, our observation lies outside current explanation. Our data also gives insight into the high temperature regime and shows that the temperature dependence of the resistivity derives in part from strong T dependent mass renormalizations.
2402.18767v1
2024-03-06
Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor
We synthesized the ferromagnetic EuAgP semiconductor and conducted a comprehensive study of its crystalline, magnetic, heat capacity, band gap, and magnetoresistance properties. Our investigation utilized a combination of X-ray diffraction, optical, and PPMS DynaCool measurements. EuAgP adopts a hexagonal structure with the $P6_3/mmc$ space group. As the temperature decreases, it undergoes a magnetic phase transition from high-temperature paramagnetism to low-temperature ferromagnetism. We determined the ferromagnetic transition temperature to be $T_{\textrm{C}} =$ 16.45(1) K by fitting the measured magnetic susceptibility using a Curie-Weiss law. Heat capacity analysis of EuAgP considered contributions from electrons, phonons, and magnons, revealing $\eta$ = 0.03 J/mol/$\textrm{K}^\textrm{2}$, indicative of semiconducting behavior. Additionally, we calculated a band gap of $\sim$ 1.324(4) eV based on absorption spectrum measurements. The resistivity versus temperature of EuAgP measured in the absence of an applied magnetic field shows a pronounced peak around $T_{\textrm{C}}$, which diminishes rapidly with increasing applied magnetic fields, ranging from 1 to 14 T. An intriguing phenomenon emerges in the form of a distinct magnetoresistance transition, shifting from positive (e.g., 1.95\% at 300 K and 14 T) to negative (e.g., -30.73\% at 14.25 K and 14 T) as the temperature decreases. This behavior could be attributed to spin-disordered scattering.
2403.03650v1
2024-03-20
Optimizing Transparent Electrodes: Interplay of High Purity SWCNTs network and a Polymer
The discovery of transparent electrodes led to the development of optoelectronic devices such as OLEDs, LCDs, touchscreens, IR sensors, etc. Since ITO has many drawbacks in respect of its production cost and limited transparency in IR, carbon nanotubes (CNTs) have been a potential replacement for ITO due to their exceptional electrical and optical properties, especially in the IR region. In this work, we present the development of a CNT-polymer composite thin film that exhibits outstanding transparency across both visible and IR spectra prepared by layer-by-layer (LbL) technique. This approach not only ensures uniform integration and crosslinking of CNTs into lightweight matrices, but also represents a cost-effective method for producing transparent electrodes with remarkable optical and electrical properties. The produced films achieved a transparency above 80% in the UV-VIS range and approximately 70% in the mid-IR range. The sheet resistance of the fabricated thin films was measured at about 4 kOhm/sq, showing a tendency to decrease with the number of bilayers. Furthermore, in this work we have investigated electrical properties and transport mechanisms in more detail with computational analysis. Computational analysis was performed to better understand the electrical behavior of nanotube-polymer junctions in the interbundle structure. Based on all results, we propose that the transparent electrodes with 4 and 6 bilayers are the most optimal structures in terms of optical and electrical properties.
2403.13594v1
1996-10-01
Itinerant Antiferromagnetism in FeGe_2
FeGe_2, and lightly doped compounds based on it, have a Fermi surface driven instability which drive them into an incommensurate spin density wave state. Studies of the temperature and magnetic field dependence of the resistivity have been used to determine the magnetic phase diagram of the pure material which displays an incommensurate phase at high temperatures and a commensurate structure below 263 K in zero field. Application of a magnetic field in the tetragonal basal plane decreases the range of temperatures over which the incommensurate phase is stable. We have used inelastic neutron scattering to measure the spin dynamics of FeGe_2. Despite the relatively isotropic transport the magnetic dynamics is quasi-one dimensional in nature. Measurements carried out on HET at ISIS have been used to map out the spin wave dispersion along the c-axis up the 400 meV, more than an order of magnitude higher than the zone boundary magnon for wavevectors in the basal plane.
9610009v1
1998-05-25
Metal-insulator transition induced by 16O -18O oxygen isotope exchange in colossal negative magnetoresistance manganites
The effect of 16O-18O isotope exchange on the electric resistivity was studied for (La(1-y)Pr(y))0.7Ca0.3MnO3 ceramic samples. Depending on y, this mixed perovskite exhibited different types of low-temperature behavior ranging from ferromagnetic metal (FM) to charge ordered (CO) antiferromagnetic insulator. It was found that at y=0.75, the substitution of 16O by 18O results in the reversible transition from a FM to a CO insulator at zero magnetic field. The applied magnetic field (H >= 2 T) transformed the sample with 18O again to the metallic state and caused the increase in the FM transition temperature Tc of the 16O sample. As a result, the isotope shift of Tc at H = 2 T was as high as 63 K. Such unique sensitivity of the system to oxygen isotope exchange, giving rise even to the metal-insulator transition, is discussed in terms of the isotope dependence of the effective electron bandwidth which shifts the balance between the CO and FM phases.
9805315v1
2001-04-13
Metal-insulator transition in 2D: a role of the upper Habbard band
To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of doubly-occupied states (upper Hubbard band). The metallic behavior of resistance is explained as result of activation of localized electrons to conductance band leading to a suppression of non-linear screening of the disorder potential. The magnetoresistance (MR) in the critical region is related to depopulation of double occupied localized states also leading to partial suppression of the nonlinear screening. The most informative data are related to nearly activated temperature dependence of MR in strongly insulating limit (which can be in particular reached from the metallic state in high enough fields). According to our model this behavior originates due to a lowering of a position of chemical potential in the upper Hubbard band due to Zeeman splitting. We compare the theoretical predictions to the existing experimental data and demonstrate that the model explains such features of the 2D MIT as scaling behavior in the critical region, saturation of MR and H/T scaling of MR in the insulating limit. The quantitative analysis of MR in strongly insulating limit based on the model suggested leads to the values of g-factors being in good agreement with known values for localized states in corresponding materials.
0104254v1
2001-05-31
Anomalous Nonlinear Microwave Response of Epitaxial YBa2Cu3O7-x Films on MgO
We have investigated the anomalous nonlinear microwave response of epitaxial electron-beam coevaporated YBa2Cu3O7-x films on MgO. The power and temperature dependent surface impedance and two-tone intermodulation distortion were measured in stripline resonators at several frequencies between 2.3 and 11.2 GHz and at temperatures between 1.7 K and Tc. All of the eight films measured to date show a decrease of the surface resistance Rs of up to one order of magnitude as the microwave current is increased up to approximately 1 mA for T < 20 K. The surface reactance Xs showed only a weak increase in the same region. The usual nonlinear increase of Rs and Xs was observed at high currents in the 100-mA range. The minimum of Rs correlates with a pronounced plateau in the third-order intermodulation signal. We have developed a phenomenological two-fluid model, incorporating a microwave current-dependent quasiparticle scattering rate g and normal fraction fn. The model contains only three adjustable parameters. We find good agreement with the measured data for constant fn and a current-dependent scattering rate g whose magnitude increases almost linearly with temperature and frequency. Obvious mechanisms leading to nonlinear microwave response like Josephson coupling across grain boundaries, nonlocal or nonequilibrium effects cannot explain the data. The anomalies could rather reflect the specific charge and spin ordering and transport phenomena in the low-dimensional cuprate superconductors.
0105613v1
2002-01-25
The influence of microstructures and crystalline defects on the superconductivity of MgB2
This work studies the influence of microstructures and crystalline defects on the superconductivity of MgB2, with the objective to improve its flux pinning. A MgB2 sample pellet that was hot isostatic pressed (HIPed) was found to have significantly increased critical current density (Jc) at high fields than its un-HIPed counterpart. The HIPed sample had a Jc of 10000 A/cm2 in 50000 Oe (5 T) at 5K. This was 20 times higher than that of the un-HIPed sample, and the same as the best Jc reported by other research groups. Microstructures observed in scanning and transmission electron microscopy indicate that the HIP process eliminated porosity present in the MgB2 pellet resulting in an improved intergrain connectivity. Such improvement in intergrain connectivity was believed to prevent the steep Jc drop with magnetic field H that occurred in the un-HIPed MgB2 pellet at H > 45000 Oe (4.5 T) and T = 5 K. The HIP process was also found to disperse the MgO that existed at the grain boundaries of the un-HIPed MgB2 pellet and to generate more dislocations in the HIPed the pellets. These dispersed MgO particles and dislocations improved flux pinning also at H<45000 Oe. The HIPing process was also found to lower the resistivity at room temperature.
0201486v2
2004-04-19
Low temperature transport in granular metals
We investigate transport in a granular metallic system at large tunneling conductance between the grains. We show that at low temperatures, $T\leq g_T\delta $, where $\delta$ is the single mean energy level spacing in a grain, the coherent electron motion at large distances dominates the physics, contrary to the high temperature ($T > g_T \delta $) behavior where conductivity is controlled by the scales of the order of the grain size. The conductivity of one and two dimensional granular metals, in the low temperature regime, decays with decreasing temperature in the same manner as that in homogeneous disordered metals, indicating thus an insulating behavior. However, even in this temperature regime the granular structure remains important and there is an additional contribution to conductivity coming from short distances. Due to this contribution the metal-insulator transition in three dimensions occurs at the value of tunnel conductance $g_T^C=(1/6\pi)\ln (E_C/\delta)$, where $E_C$ is the charging energy of an isolated grain, and not at the generally expected $g_T^C \propto 1$. Corrections to the density of states of granular metals due to the electron-electron interaction are calculated. Our results compare favorably with the logarithmic dependence of resistivity in the high-$T_c$ cuprate superconductors indicating that these materials may have a granular structure.
0404443v2
2004-10-21
Novel magnetic behavior of single crystalline Er2PdSi3
We report the results of ac and dc magnetic susceptibility (chi) and electrical resistivity (rho) measurements on the single crystals of Er2PdSi3, crystallizing in an AlB2-derived hexagonal structure, for two orientations H//[0001] and H//[2 -1 -1 0]. For H//[0001], there are apparently two magnetic transitions as revealed by the ac chi data, one close to 7 K attributable to antiferromagnetic ordering and the other around 2 K. However, for H // [2 -1 -1 0], we observe additional features above 7 K (near 11 and 23 K) in the plot of low-field chi(T); also, there is no corresponding anomaly in the rho(T) plot. In this respect, the magnetic behavior of this compound is novel, particularly while compared with other members of this series. The features in ac chi respond differently to the application of a small dc magnetic field for the two directions. As far as low temperature (T= 1.8 and 5 K) isothermal magnetization (M) behaviour is concerned, it exhibits meta-magnetic-like features around 2 kOe saturating at high fields for the former orientation, whereas for the latter, there is no saturation even at 120 kOe. The sign of paramagnetic Curie temperature is different for these two directions. Thus, there is a strong anisotropy in the magnetic behavior. However, interestingly, the rho(T) plots are found to be essentially isotropic, with the data revealing possible formation of magnetic superzone formation below 7 K.
0410532v1
2006-06-22
Metal-insulator transition in Nd$_{1-x}$Eu$_{x}$NiO$_{3}$ compounds
Polycrystalline Nd$_{1-x}$Eu$_{x}$NiO$_3$ ($0 \leq x \leq 0.5$) compounds were synthesized in order to investigate the character of the metal-insulator (MI) phase transition in this series. Samples were prepared through the sol-gel route and subjected to heat treatments at $\sim$1000 $^\circ$C under oxygen pressures as high as 80 bar. X-ray Diffraction (XRD) and Neutron Powder Diffraction (NPD), electrical resistivity $\rho(T)$, and Magnetization $M(T)$ measurements were performed on these compounds. The results of NPD and XRD indicated that the samples crystallize in an orthorhombic distorted perovskite structure, space group $Pbnm$. The analysis of the structural parameters revealed a sudden and small expansion of $\sim$0.2% of the unit cell volume when electronic localization occurs. This expansion was attributed to a small increase of $\sim$0.003 \AA{} of the average Ni-O distance and a simultaneous decrease of $\sim$$- 0.5^\circ$ of the Ni-O-Ni superexchange angle. The $\rho(T)$ measurements revealed a MI transition occurring at temperatures ranging from $T_{\rm MI}\sim 193$ to 336 K for samples with $x = 0$ and 0.50, respectively. These measurements also show a large thermal hysteresis in NdNiO$_{3}$ during heating and cooling processes suggesting a first-order character of the phase transition at $T_{\rm MI}$. The width of this thermal hysteresis was found to decrease appreciably for the sample Nd$_{0.7}$Eu$_{0.3}$NiO$_{3}$. The results indicate that cation disorder associated with increasing substitution of Nd by Eu is responsible for changing the first order character of the transition in NdNiO$_{3}$.
0606573v1
2007-03-21
Dynamics of the Magnetic Flux Trapped in Fractal Clusters of a Normal Phase in Percolative Superconductors
The effect of the fractal clusters of a normal phase, which act as pinning centers, on the dynamics of magnetic flux in percolative type-II superconductor is considered. The main features of these clusters are studied in detail: the cluster statistics is analyzed; the fractal dimension of their boundary is estimated; the distribution of critical currents is obtained, and its peculiarities are explored. It is found that there is the range of fractal dimension where this distribution has anomalous statistical properties, specifically, its dispersion becomes infinite. It is examined how the finite resolution capacity of the cluster geometric size measurement affects the estimated value of fractal dimension. The effect of fractal properties of the normal phase clusters on the electric field arisen from magnetic flux motion is investigated for the cluster area distribution of different kinds. The voltage-current characteristics of fractal superconducting structures in the resistive state are obtained for an arbitrary fractal dimension. It is revealed that the fractality of the boundaries of the normal phase clusters intensifies the magnetic flux trapping and thereby raises the critical current of a superconductor.
0703541v1
2007-03-27
Diffusion and activation of n-type dopants in germanium
The diffusion and activation of $n$-type impurities (P and As) implanted into $p$-type Ge(100) substrates were examined under various dose and annealing conditions. The secondary ion mass spectrometry profiles of chemical concentrations indicated the existence of a sufficiently high number of impurities with increasing implanted doses. However, spreading resistance probe profiles of electrical concentrations showed electrical concentration saturation in spite of increasing doses and indicated poor activation of As relative to P in Ge. The relationships between the chemical and electrical concentrations of P in Ge and Si were calculated, taking into account the effect of incomplete ionization. The results indicated that the activation of P was almost the same in Ge and Si. The activation ratios obtained experimentally were similar to the calculated values, implying insufficient degeneration of Ge. The profiles of P in Ge substrates with and without damage generated by Ge ion implantation were compared, and it was clarified that the damage that may compensate the activated $n$-type dopants has no relationship with the activation of P in Ge.
0703708v3
2008-10-14
Superconductivity in Fluorine-Arsenide Sr_{1-x}La_xFeAsF
Since the discovery of superconductivity\cite{1} at 26 K in oxy-pnictide $LaFeAsO_{1-x}F_x$, enormous interests have been stimulated in the fields of condensed matter physics and material sciences. Among the five different structures in this broad type of superconductors\cite{2,3,4,5,6}, the ZrCuSiAs structure has received special attention since the $T_c$ has been quickly promoted to 55-56 K\cite{7,8,9,10,11} in fluorine doped oxy-pnictides REFeAsO (RE = rare earth elements). The superconductivity can also be induced by applying a high pressure to the undoped samples\cite{12,13}. The mechanism of superconductivity in the FeAs-based system remains unclear yet, but it turns out to be clear that any change to the structure or the building blocks will lead to a change of the superconducting transition temperatures. In this Letter, we report the fabrication of the new family of compounds, namely fluorine-arsenides DvFeAsF (Dv = divalent metals) with the ZrCuSiAs structure and with the new building block DvF instead of the REO (both the layers DvF and REO have the combined cation state of "+1"). The undoped parent phase has a Spin-Density-Wave like transition at about 173 K for SrFeAsF, 118 K for CaFeAsF and 153 K for EuFeAsF. By doping electrons into the system the resistivity anomaly associated with this SDW transition is suppressed and superconductivity appears at 32 K in the fluorine-arsenide Sr$_{1-x}$La$_x$FeAsF (x = 0.4). Our discovery here initiates a new method to obtain superconductors in the FeAs-based system.
0810.2531v3
2009-07-09
Annular Spin-Transfer Memory Element
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm in mean radius and 8 to 100 nm in width), comprising a reference magnetic layer with a fixed magnetic helicity and a free magnetic layer with a changeable magnetic helicity. These are separated by a thin non-magnetic layer. Information is written using a current flowing perpendicular to the layers, inducing a spin-transfer torque that alters the magnetic state of the free layer. The resistance, which depends on the magnetic state of the device, is used to read out the stored information. This device offers several important advantages compared to conventional spin-transfer magnetic random access memory (MRAM) devices. First, the ring geometry offers stable magnetization states, which are, nonetheless, easily altered with short current pulses. Second, the ring geometry naturally solves a major challenge of spin-transfer devices: writing requires relatively high currents and a low impedance circuit, whereas readout demands a larger impedance and magnetoresistance. The annular device accommodates these conflicting requirements by performing reading and writing operations at separate read and write contacts placed at different locations on the ring.
0907.1600v1
2009-09-16
Band structure engineering of epitaxial graphene on SiC by molecular doping
Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizing graphene with the strong electron acceptor tetrafluorotetracyanoquinodimethane (F4-TCNQ). Charge neutrality can be reached in monolayer graphene as shown in electron dispersion spectra from angular resolved photoemission spectroscopy (ARPES). In bilayer graphene the band gap that originates from the SiC/graphene interface dipole increases with increasing F4-TCNQ deposition and, as a consequence of the molecular doping, the Fermi level is shifted into the band gap. The reduction of the charge carrier density upon molecular deposition is quantified using electronic Fermi surfaces and Raman spectroscopy. The structural and electronic characteristics of the graphene/F4-TCNQ charge transfer complex are investigated by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The doping effect on graphene is preserved in air and is temperature resistant up to 200\degree C. Furthermore, graphene non-covalent functionalization with F4-TCNQ can be implemented not only via evaporation in ultra-high vacuum but also by wet chemistry.
0909.2966v2
2010-01-07
Anisotropic Connectivity and its Influence on Critical Current Densities, Irreversibility Fields, and Flux Creep in In-Situ-Processed MgB2 Strands
The anisotropy of the critical current density (Jc) and its influence on measurement of irreversibility field (Birr) has been investigated for high quality, in-situ MgB2 strands. Comparison of transport and magnetization measurements has revealed the onset of a regime where large differences exist between transport and magnetically measured values of the critical current density and Birr. These effects, initially unexpected due to the lack of crystalline texture in these in-situ processed strands, appear to be due to a fibrous microstructure, connected with the details of the wire fabrication and MgB2 formation reactions. Scanning electron micrographs of in-situ-processed MgB2 monocore strands have revealed a fibrous microstructure. Grains (~100 nm) are randomly oriented, and there is no apparent local texture of the grains. However, this randomly oriented polycrystalline material has a fibrous texture at a larger length scale, with stringers of MgB2 (~ 60 {\mu}m long and ~5 {\mu}m in diameter) partially separated by elongated pores -- the spaces previously occupied by stringers of elemental Mg. This leads to an interpretation of the differences observed in transport and magnetically determined critical currents, in particular a large deviation between the two at higher fields, in terms of different transverse and longitudinal connectivities within the strand. The different values of connectivity also lead to different resistive transition widths, and thus irreversibility field values, as measured by transport and magnetic techniques. Finally, these considerations are seen to influence estimated pinning potentials for the strands.
1001.1030v1
2010-04-21
Determination of the intrinsic ferroelectric polarization in orthorhombic HoMnO3
Whether large ferroelectric polarization P exists in the orthorhombic HoMnO3 with the E-type antiferromagnetic spin ordering or not remains as one of unresolved, challenging issues in the physics of multiferroics. The issue is closely linked to an intriguing experimental difficulty for determining P of polycrystalline specimens that conventional pyroelectric current measurements performed after a poling procedure under high dc electric fields are subject to large errors due to the problems caused by leakage currents or space charges. To overcome the difficulty, we employed the PUND method, which uses successively the two positive and two negative electrical pulses, to directly measure electrical hysteresis loops in several polycrystalline HoMnO3 specimens below their N\'eel temperatures. We found that all the HoMnO3 samples had similar remnant polarization Pr values at each temperature, regardless of their variations in resistivity, dielectric constant, and pyroelectric current levels. Moreover, Pr of ~0.07 \mu\C/cm2 at 6 K is consistent with the P value obtained from the pyroelectric current measurement performed after a short pulse poling. Our findings suggest that intrinsic P of polycrystalline HoMnO3 can be determined through the PUND method and P at 0 K may reach ~0.24 \mu\C/cm2 in a single crystalline specimen.
1004.3643v1
2010-07-26
Python Regius (Ball Python) shed skin: Biomimetic analogue for function-targeted design of tribo-surfaces
A major concern in designing tribo-systems is to minimize friction, save energy, and to reduce wear. Satisfying these requirements depends on the integrity of the rubbing surface and its suitability to sliding conditions. As such, designers currently focus on constructing surfaces that are an integral part of the function of the tribo-system. Inspirations for such constructs come from studying natural systems and from implementing natural design rules. One species that may serve as an analogue for design is the Ball python. This is because such a creature while depending on legless locomotion when sliding against various surfaces, many of which are deemed tribologically hostile, doesn't sustain much damage. Resistance to damage in this case originates from surface design features. As such, studying these features and how do they contribute to the control of friction and wear is very attractive for design purposes. In this work we apply a multi scale surface characterization approach to study surface design features of the Python regius that are beneficial to design high quality lubricating surfaces (such as those obtained through plateau honing). To this end, we studied topographical features by SEM and through White Light Interferrometery (WLI). We further probe the roughness of the surface on multi scale and as a function of location within the body. The results are used to draw a comparison to metrological features of commercial cylinder liners obtained by plateau honing.
1007.4419v1
2010-11-09
Phase diagram of iron-arsenide superconductors Ca(Fe1-xCox)2As2 (0 <= x <= 0.2)
Platelet-like single crystals of the Ca(Fe1-xCox)2As2 series having lateral dimensions up to 15 mm and thickness up to 0.5 mm were obtained from the high temperature solution growth technique using Sn flux. Upon Co doping, the c-axis of the tetragonal unit cell decreases, while the a-axis shows a less significant variation. Pristine CaFe2As2 shows a combined spin-density-wave and structural transition near T = 166 K which gradually shifts to lower temperatures and splits with increasing Co-doping. Both transitions terminate abruptly at a critical Co-concentration of xc = 0.075. For x \geq 0.05, superconductivity appears at low temperatures with a maximum transition temperature TC of around 20 K. The superconducting volume fraction increases with Co concentration up to x = 0.09 followed by a gradual decrease with further increase of the doping level. The electronic phase diagram of Ca(Fe1-xCox)2As2 (0 \leq x \leq 0.2) series is constructed from the magnetization and electric resistivity data. We show that the low-temperature superconducting properties of Co-doped CaFe2As2 differ considerably from those of BaFe2As2 reported previously. These differences seem to be related to the extreme pressure sensitivity of CaFe2As2 relative to its Ba counterpart.
1011.2085v1
2011-08-17
Impact of Protostellar Outflow on Star Formation: Effects of Initial Cloud Mass
Star formation efficiency controlled by the protostellar outflow in a single cloud core is investigated by three-dimensional resistive MHD simulations. Starting from the prestellar cloud core, the star formation process is calculated until the end of the main accretion phase. In the calculations, the mass of the prestellar cloud is parameterized. During the star formation, the protostellar outflow is driven by the circumstellar disk. The outflow extends also in the transverse direction until its width becomes comparable to the initial cloud scale, and thus, the outflow has a wide opening angle of >40 degrees. As a result, the protostellar outflow sweeps up a large fraction of the infalling material and ejects it into the interstellar space. The outflow can eject at most over half of the host cloud mass, significantly decreasing star formation efficiency. The outflow power is stronger in clouds with a greater initial mass. Thus, the protostellar outflow effectively suppresses star formation efficiency in a massive cloud. The outflow weakens significantly and disappears in several free-fall timescales of the initial cloud after the cloud begins to collapse. The natal prestellar core influences the lifetime and size of the outflow. At the end of the main accretion phase, a massive circumstellar disk comparable in mass to the protostar remains. Calculations show that typically, ~30% of the initial cloud mass is converted into the protostar and ~20% remains in the circumstellar disk, while ~40% is ejected into the interstellar space by the protostellar outflow. Therefore, a single cloud core typically has a star formation efficiency of 30-50%.
1108.3564v1
2012-05-02
Negative thermal expansion and antiferromagnetism in the actinide oxypnictide NpFeAsO
A neptunium analogue of the LaFeAsO tetragonal layered compound has been synthesized and characterized by a variety of experimental techniques. The occurrence of long-range magnetic order below a critical temperature T_N = 57 K is suggested by anomalies in the temperature-dependent magnetic susceptibility, electrical resistivity, Hall coefficient, and specific heat curves. Below T_N, powder neutron diffraction measurements reveal an antiferromagnetic structure of the Np sublattice, with an ordered magnetic moment of 1.70(0.07) \mu_B aligned along the crystallographic c-axis. No magnetic order has been observed on the Fe sublattice, setting an upper limit of about 0.3 \mu_B for the ordered magnetic moment on the iron. High resolution x-ray powder diffraction measurements exclude the occurrence of lattice transformations down to 5 K, in sharp contrast to the observation of a tetragonal-to-orthorhombic distortion in the rare-earth analogues, which has been associated with the stabilization of a spin density wave on the iron sublattice. Instead, a significant expansion of the NpFeAsO lattice parameters is observed with decreasing temperature below T_N, corresponding to a relative volume change of about 0.2% and to an invar behavior between 5 and 20 K. First-principle electronic structure calculations based on the local-spin density plus Coulomb interaction and the local density plus Hubbard-I approximations provide results in good agreement with the experimental findings.
1205.0438v1
2012-09-13
Magnetic phase transitions in single crystals of the chiral helimagnet Cr1/3NbS2
The chiral helimagnet Cr1/3NbS2 has been investigated by magnetic, transport and thermal properties measurements on single crystals and by first principles electronic structure calculations. From the measured field and temperature dependence of the magnetization for fields applied perpendicular to the c axis, the magnetic phase diagram has been constructed in the vicinity of the phase transitions. A transition from a paramagnetic to a magnetically ordered phase occurs near 120 K. With increasing magnetic field and at temperatures below 120 K, this material undergoes transitions from a helimagnetic to a soliton-lattice phase near 900 Oe, and then to a ferromagnetic phase near 1300 Oe. The transitions are found to strongly affect the electrical transport. The resistivity decreases sharply upon cooling near 120 K, and the spin reorientation from the helimagnetic ground state to the commensurate ferromagnetic state is evident in the magnetoresistance. At high fields a large magnetoresistance (55 % at 140 kOe) is observed near the magnetic transition temperature. Heat capacity and electronic structure calculations show the density of states at the Fermi level is low in the magnetically ordered state. Effects of spin fluctuations are likely important in understanding the behavior of Cr1/3NbS2 near and above the magnetic ordering transitions.
1209.2783v1
2013-04-15
Non-Fermi liquids and the Wiedemann-Franz law
A general discussion of the ratio of thermal and electrical conductivities in non-Fermi liquid metals is given. In metals with sharp Drude peaks, the relevant physics is correctly organized around the slow relaxation of almost-conserved momenta. While in Fermi liquids both currents and momenta relax slowly, due to the weakness of interactions among low energy excitations, in strongly interacting non-Fermi liquids typically only momenta relax slowly. It follows that the conductivities of such non-Fermi liquids are obtained within a fundamentally different kinematics to Fermi liquids. Among these strongly interacting non-Fermi liquids we distinguish cases with only one almost-conserved momentum, which we term hydrodynamic metals, and with many patchwise almost-conserved momenta. For all these cases, we obtain universal expressions for the ratio of conductivities that violate the Wiedemann-Franz law. We further discuss the case in which long-lived `cold' quasiparticles, in general with unconventional scattering rates, coexist with strongly interacting hot spots, lines or bands. For these cases, we characterize circumstances under which non-Fermi liquid transport, in particular a linear in temperature resistivity, is and is not compatible with the Wiedemann-Franz law. We suggest the likely outcome of future transport experiments on CeCoIn5, YbRh2Si2 and Sr3Ru2O7 at their critical magnetic fields.
1304.4249v3
2014-05-15
Anomalous frequency and temperature dependent scattering and Hund's coupling in the almost quantum critical heavy fermion system CeFe$_2$Ge$_2$
We present THz range optical conductivity data of a thin film of the near quantum critical heavy fermion compound CeFe$_2$Ge$_2$. Our complex conductivity measurements find a deviation from conventional Drude-like transport in a temperature range previously reported to exhibit unconventional behavior. We calculate the frequency dependent effective mass and scattering rate using an extended Drude model analysis. We find the inelastic scattering rate can be described by a temperature dependent power-law $\omega^{n(T)}$ where $n(T)$ approaches $\sim1.0 \pm 0.2$ at 1.5 K. This is compared to the $\rho \sim T^{1.5}$ behavior claimed in dc resistivity data and the $\rho \sim T^{2}$ expected from Fermi-liquid theory. In addition to a low temperature mass renormalization, we find an anomalous mass renormalization that persists to high temperature. We attribute this to a Hund's coupling in the Fe states in a manner similar to that recently proposed in the ferro-pnictides. CeFe$_2$Ge$_2$ appears to be a very interesting system where one may study the interplay between the usual $4f$ lattice Kondo effect and this Hund's enhanced Kondo effect in the $3d$ states.
1405.4007v3
2014-05-23
Growth and characterization of heteroepitaxial La-substituted BaSnO$_3$ films on SrTiO$_3$ (001) and SmScO$_3$ (110) substrates
Heteroepitaxial growth of BaSnO$_3$ (BSO) and Ba$_{1-x}$La$_x$SnO$_3$ (x = 7 %) (LBSO) thin films on different perovskite single crystal (SrTiO$_3$ (001) and SmScO$_3$ (110)) substrates has been achieved by Pulsed Laser Deposition (PLD) under optimized deposition conditions. X-ray diffraction measurements indicate that the films on either of these substrates are relaxed due to the large mismatch and present a high degree of crystallinity with narrow rocking curves and smooth surface morphology while analytical quantification by proton induced x-ray emission (PIXE) confirms the stoichiometric La transfer from a polyphasic target, producing films with La contents above the bulk solubility limit. The films show degenerate semiconducting behavior on both substrates, with the observed room temperature resistivities, Hall mobilities and carrier concentrations of 4.4 $m \Omega cm$, 10.11 $cm^2 V^{-1} s^{-1}$, and 1.38 $\cdot 10^{20} cm^{-3}$ on SmScO$_3$ and 7.8 $m \Omega cm$, 5.8 $cm^2 V^{-1} s^{-1}$, and 1.36 $\cdot 10^{20} cm^{-3}$ on SrTiO$_3$ ruling out any extrinsic contribution from the substrate. The superior electrical properties observed on the SmScO3 substrate are attributed to reduction in dislocation density from the lower lattice mismatch.
1405.6233v1
2014-05-31
Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit
We investigate the quantum anomalous Hall Effect (QAHE) and related chiral transport in the millimeter-size (Cr0.12Bi0.26Sb0.62)2Te3 films. With high sample quality and robust magnetism at low temperatures, the quantized Hall conductance of e2/h is found to persist even when the film thickness is beyond the two-dimensional (2D) hybridization limit. Meanwhile, the Chern insulator-featured chiral edge conduction is manifested by the non-local transport measurements. In contrast to the 2D hybridized thin film, an additional weakly field-dependent longitudinal resistance is observed in the 10 quintuple-layer film, suggesting the influence of the film thickness on the dissipative edge channel in the QAHE regime. The extension of QAHE into the three-dimensional thickness region addresses the universality of this quantum transport phenomenon and motivates the exploration of new QAHE phases with tunable Chern numbers. In addition, the observation of the scale-invariant dissipationless chiral propagation on a macroscopic scale makes a major stride towards ideal low-power interconnect applications.
1406.0106v2
2014-09-11
High performance solar cells based on graphene-GaAs heterostructures
The honeycomb connection of carbon atoms by covalent bonds in a macroscopic two-dimensional scale leads to fascinating graphene and solar cell based on graphene/silicon Schottky diode has been widely studied. For solar cell applications, GaAs is superior to silicon as it has a direct band gap of 1.42 eV and its electron mobility is six times of that of silicon. However, graphene/GaAs solar cell has been rarely explored. Herein, we report graphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5% without and with anti-reflection layer on graphene, respectively. The Eta of 15.5% is higher than the state of art efficiency for graphene/Si system (14.5%). Furthermore, our calculation points out Eta of 25.8% can be reached by reasonably optimizing the open circuit voltage, junction ideality factor, resistance of graphene and metal/graphene contact. This research strongly support graphene/GaAs hetero-structure solar cell have great potential for practical applications.
1409.3500v3
2014-10-13
Breakdown of Three-dimensional Dirac Semimetal State in pressurized Cd3As2
We report the first observation of a pressure-induced breakdown of the 3D-DSM state in Cd3As2, evidenced by a series of in-situ high-pressure synchrotron X-ray diffraction (XRD) and single crystal transport measurements. We find that Cd3As2 undergoes a structural phase transition from a metallic tetragonal (T) phase in space group I41/acd to a semiconducting monoclinic (M) phase in space group P21/c at critical pressure 2.57 GPa, above this pressure, an activation energy gap appears, accompanied by distinct switches in Hall resistivity slope and electron mobility. These changes of crystal symmetry and corresponding transport properties manifest the breakdown of the 3D-DSM state in pressurized Cd3As2.
1410.3213v4
2014-11-13
Analysis of viscoelastic soft dielectric elastomer generators operating in an electrical circuit
A predicting model for soft Dielectric Elastomer Generators (DEGs) must consider a realistic model of the electromechanical behaviour of the elastomer filling, the variable capacitor and of the electrical circuit connecting all elements of the device. In this paper such an objective is achieved by proposing a complete framework for reliable simulations of soft energy harvesters. In particular, a simple electrical circuit is realised by connecting the capacitor, stretched periodically by a source of mechanical work, in parallel with a battery through a diode and with an electrical load consuming the energy produced. The electrical model comprises resistances simulating the effect of the electrodes and of the conductivity current invariably present through the dielectric film. As these devices undergo a high number of electro-mechanical loading cycles at large deformation, the time-dependent response of the material must be taken into account as it strongly affects the generator outcome. To this end, the viscoelastic behaviour of the polymer and the possible change of permittivity with strains are analysed carefully by means of a proposed coupled electro-viscoelastic constitutive model, calibrated on experimental data available in the literature for an incompressible polyacrilate elastomer (3M VHB4910). Numerical results showing the importance of time-dependent behaviour on the evaluation of performance of DEGs for different loading conditions, namely equi-biaxial and uniaxial, are reported in the final section.
1411.3613v2
2014-11-28
Growth control of the oxidation state in vanadium oxide thin films
Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metal- insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2(+3)O3, V(+4)O2, and V2(+5)O5. A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (< 10 mTorr) or higher P(O2) (> 25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.
1411.7922v1
2014-12-05
Effects of Oxygen Adsorption on the Surface State of Epitaxial Silicene on Ag(111)
Epitaxial silicene, which is one single layer of silicon atoms packed in a honeycomb structure, demonstrates a strong interaction with the substrate that dramatically affects its electronic structure. The role of electronic coupling in the chemical reactivity between the silicene and the substrate is still unclear so far, which is of great importance for functionalization of silicene layers. Here, we report the reconstructions and hybridized electronic structures of epitaxial 4x4 silicene on Ag(111), which are revealed by scanning tunneling microscopy and angle-resolved photoemission spectroscopy. The hybridization between Si and Ag results in a metallic surface state, which can gradually decay due to oxygen adsorption. X-ray photoemission spectroscopy confirms the decoupling of Si-Ag bonds after oxygen treatment as well as the relatively oxygen resistance of Ag(111) surface, in contrast to 4x4 silicene [with respect to Ag(111)]. First-principles calculations have confirmed the evolution of the electronic structure of silicene during oxidation. It has been verified experimentally and theoretically that the high chemical activity of 4x4 silicene is attributable to the Si pz state, while the Ag(111) substrate exhibits relatively inert chemical behavior.
1412.1887v1
2015-02-10
Ultrafast dynamic conductivity and scattering rate saturation of photoexcited charge carriers in silicon investigated with a midinfrared continuum probe
We employ ultra-broadband terahertz-midinfrared probe pulses to characterize the optical response of photoinduced charge-carrier plasmas in high-resistivity silicon in a reflection geometry, over a wide range of excitation densities (10^{15}-10^{19} cm^{-3}) at room temperature. In contrast to conventional terahertz spectroscopy studies, this enables one to directly cover the frequency range encompassing the resultant plasma frequencies. The intensity reflection spectra of the thermalized plasma, measured using sum-frequency (up-conversion) detection of the probe pulses, can be modeled well by a standard Drude model with a density-dependent momentum scattering time of approx. 200 fs at low densities, reaching approx. 20 fs for densities of approx. 10^{19} cm^{-3}, where the increase of the scattering rate saturates. This behavior can be reproduced well with theoretical results based on the generalized Drude approach for the electron-hole scattering rate, where the saturation occurs due to phase-space restrictions as the plasma becomes degenerate. We also study the initial sub-picosecond temporal development of the Drude response, and discuss the observed rise in the scattering time in terms of initial charge-carrier relaxation, as well as the optical response of the photoexcited sample as predicted by finite-difference time-domain simulations.
1502.02829v1
2015-03-03
Construction of force measuring optical tweezers instrumentation and investigations of biophysical properties of bacterial adhesion organelles
Optical tweezers are a technique in which microscopic-sized particles, including living cells and bacteria, can be non-intrusively trapped with high accuracy solely using focused light. The technique has therefore become a powerful tool in the field of biophysics. Optical tweezers thereby provide outstanding manipulation possibilities of cells as well as semi-transparent materials, both non-invasively and non-destructively, in biological systems. In addition, optical tweezers can measure minute forces (< 10-12 N), probe molecular interactions and their energy landscapes, and apply both static and dynamic forces in biological systems in a controlled manner. The assessment of intermolecular forces with force measuring optical tweezers, and thereby the biomechanical structure of biological objects, has therefore considerably facilitated our understanding of interactions and structures of biological systems. Adhesive bacterial organelles, so called pili, mediate adhesion to host cells and are therefore crucial for the initial bacterial-cell contact. Thus, they serve as an important virulence factor. The investigation of pili, both their biogenesis and their expected in vivo properties, brings information that can be of importance for the design of new drugs to prevent bacterial infections, which is crucial in the era of increased bacterial resistance towards antibiotics. In this thesis, an experimental setup of a force measuring optical tweezers system and the results of a number of biomechanical investigations of adhesive bacterial organelles are presented. Force measuring optical tweezers have been used to characterize three different types of adhesive organelles under various conditions, P, type 1, and S pili, which all are expressed by uropathogenic Escherichia coli. A quantitative biophysical force-extension model, built upon the structure and force response, has been developed.
1503.00881v1
2015-03-30
Microbranching in mode-I fracture using large scale simulations of amorphous and perturbed lattice models
We study the high-velocity regime mode-I fracture instability when small microbranches start to appear near the main crack, using large scale simulations. Some of the features of those microbranches have been reproduced qualitatively in smaller scale studies (using ${\cal O}(10^4)$ atoms) on both a model of an amorphous materials (via the continuous random network model) and using perturbed lattice models. In this study, larger scale simulations (${\cal O}(10^6)$ atoms) were performed using multi-threading computing on a GPU device, in order to achieve more physically realistic results. First, we find that the microbranching pattern appears to be converging with the lattice width. Second, the simulations reproduce the growth of the size of a microbranch as a function of the crack velocity, as well as the increase of the amplitude of the derivative of the electrical resistance RMS with respect to the time as a function of the crack velocity. In addition, the simulations yield the correct branching angle of the microbranches, and the power law governing the shape of the microbranches seems to be lower than one, so that the side cracks turn over in the direction of propagation of the main crack as seen in experiment.
1503.08616v2
2016-04-12
An invisible non-volatile solid-state memory
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable resistive states reported scarcely differ by more than a fraction of a percent at room temperature. Here we show that the metamagnetic (ferromagnetic to antiferromagnetic) transition in intermetallic Fe0.50Rh0.50 can be electrically controlled in a magnetoelectric heterostructure to reveal or cloak a given ferromagnetic state. From an aligned ferromagnetic phase, magnetic states are frozen into the antiferromagnetic phase by the application of an electric field, thus eliminating the stray field and likewise making it insensitive to external magnetic field. Application of a reverse electric field reverts the antiferromagnetic state to the original ferromagnetic state. Our work demonstrates the building blocks of a feasible, extremely stable, non-volatile, electrically addressable, low-energy dissipation, magnetoelectric multiferroic memory.
1604.03383v2
2016-05-19
Robust two-dimensional superconductivity and vortex system in Bi2Te3/FeTe heterostructures
The discovery of two-dimensional superconductivity in Bi2Te3/FeTe heterostructure provides a new platform for the search of Majorana fermions in condensed matter systems. Since Majorana fermions are expected to reside at the core of the vortices, a close examination of the vortex dynamics in superconducting interface is of paramount importance. Here, we report the robustness of the interfacial superconductivity and 2D vortex dynamics in four as-grown and aged Bi2Te3/FeTe heterostructure with different Bi2Te3 epilayer thickness (3, 5, 7, 14 nm). After two years' air exposure, superconductivity remains robust even when the thickness of Bi2Te3 epilayer is down to 3 nm. Meanwhile, a new feature at ~13 K is induced in the aged samples, and the high field studies reveal its relevance to superconductivity. The resistance of all as-grown and aged heterostructures, just below the superconducting transition temperature follows the Arrhenius relation, indicating the thermally activated flux flow behavior at the interface of Bi2Te3 and FeTe. Moreover, the activation energy exhibits a logarithmic dependence on the magnetic field, providing a compelling evidence for the 2D vortex dynamics in this novel system. The weak disorder associated with aging-induced Te vacancies is possibly responsible for these observed phenomena.
1605.05903v1
2016-07-06
Chiral anomaly from strain-induced gauge fields in Dirac and Weyl semimetals
Dirac and Weyl semimetals form an ideal platform for testing ideas developed in high energy physics to describe massless relativistic particles. One such quintessentially field-theoretic idea of chiral anomaly already resulted in the prediction and subsequent observation of the pronounced negative magnetoresistance in these novel materials for parallel electric and magnetic fields. Here we predict that the chiral anomaly occurs - and has experimentally observable consequences - when real electromagnetic fields E and B are replaced by strain-induced pseudo-electromagnetic fields e and b. For example, a uniform pseudomagnetic field b is generated when a Weyl semimetal nanowire is put under torsion. In accord with the chiral anomaly equation we predict a negative contribution to the wire resistance proportional to the square of the torsion strength. Remarkably, left and right moving chiral modes are then spatially segregated to the bulk and surface of the wire forming a "topological coaxial cable". This produces hydrodynamic flow with potentially very long relaxation time. Another effect we predict is the ultrasonic attenuation and electromagnetic emission due to a time periodic mechanical deformation causing pseudoelectric field e. These novel manifestations of the chiral anomaly are most striking in the semimetals with a single pair of Weyl nodes but also occur in Dirac semimetals such as Cd3As2 and Na3Bi and Weyl semimetals with unbroken time reversal symmetry.
1607.01810v2
2016-11-17
Interfacial thermal conductance in graphene/black phosphorus heterogeneous structures
Graphene, as a passivation layer, can be used to protect the black phosphorus from the chemical reaction with surrounding oxygen and water. However, black phosphorus and graphene heterostructures have low efficiency of heat dissipation due to its intrinsic high thermal resistance at the interfaces. The accumulated energy from Joule heat has to be removed efficiently to avoid the malfunction of the devices. Therefore, it is of significance to investigate the interfacial thermal dissipation properties and manipulate the properties by interfacial engineering on demand. In this work, the interfacial thermal conductance between few-layer black phosphorus and graphene is studied extensively using molecular dynamics simulations. Two critical parameters, the critical power Pcr to maintain thermal stability and the maximum heat power density Pmax with which the system can be loaded, are identified. Our results show that interfacial thermal conductance can be effectively tuned in a wide range with external strains and interracial defects. The compressive strain can enhance the interfacial thermal conductance by one order of magnitude, while interface defects give a two-fold increase. These findings could provide guidelines in heat dissipation and interfacial engineering for thermal conductance manipulation of black phosphorus-graphene heterostructure-based devices.
1611.05598v1
2017-06-08
Electronic and phonon excitations in α-RuCl$_3$
We report on THz, infrared reflectivity and transmission experiments for wave numbers from 10 to 8000 cm$^{-1}$ ($\sim$ 1 meV - 1 eV) and for temperatures from 5 to 295 K on the Kitaev candidate material {\alpha}-RuCl$_3$. As reported earlier, the compound under investigation passes through a first-order structural phase transition, from a monoclinic high-temperature to a rhombohedral low-temperature phase. The phase transition shows an extreme and unusual hysteretic behavior, which extends from 60 to 166 K. In passing this phase transition, in the complete frequency range investigated we found a significant reflectance change, which amounts almost a factor of two. We provide a broadband spectrum of dielectric constant, dielectric loss and optical conductivity from the THz to the mid infrared regime and study in detail the phonon response and the low-lying electronic density of states. We provide evidence for the onset of an optical energy gap, which is of order 200 meV, in good agreement with the gap derived from measurements of the DC electrical resistivity. Remarkably, the onset of the gap exhibits a strong blue shift on increasing temperatures.
1706.02724v2