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int64 0 2k | instruction stringlengths 945 985 | output stringlengths 5.12k 5.16k |
|---|---|---|
100 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.85 micrometers and it is doped with Arsenic at a concentration of 319499304873979150336 cm^-3. The short gate region is of the material Diamond with a length of 0.51 micrometers and it is doped with Boron at a concentration of 461181385126498664448 cm^-3. The long gate region is of the material SiGe with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 23071352588699889664 cm^-3. The drain region is of the material Silicon with a length of 0.85 micrometers and it is doped with Boron at a concentration of 189694948877134823424 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.007)
(define Lgs 0.51)
(define Lgl 0.26)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.85)
(define Ld 0.85)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
319499304873979150336
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
461181385126498664448
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
23071352588699889664
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
189694948877134823424
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
101 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.77 micrometers and it is doped with Phosphorus at a concentration of 817956410462221238272 cm^-3. The short gate region is of the material SiGe with a length of 0.98 micrometers and it is doped with Arsenic at a concentration of 428345533932477612032 cm^-3. The long gate region is of the material GaN with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 974388539064950980608 cm^-3. The drain region is of the material SiGe with a length of 0.77 micrometers and it is doped with Boron at a concentration of 873138134816279625728 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.006)
(define Lgs 0.98)
(define Lgl 0.02)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.77)
(define Ld 0.77)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
817956410462221238272
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
428345533932477612032
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
974388539064950980608
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
873138134816279625728
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
102 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 861403993425964826624 cm^-3. The short gate region is of the material Silicon with a length of 0.35 micrometers and it is doped with Boron at a concentration of 158070866174049320960 cm^-3. The long gate region is of the material Germanium with a length of 0.74 micrometers and it is doped with Arsenic at a concentration of 356920809716174290944 cm^-3. The drain region is of the material Germanium with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 373055557773322485760 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.003)
(define Lgs 0.35)
(define Lgl 0.74)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.32)
(define Ld 0.32)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
861403993425964826624
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
158070866174049320960
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
356920809716174290944
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
373055557773322485760
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
103 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.62 micrometers and it is doped with Boron at a concentration of 274844966883942072320 cm^-3. The short gate region is of the material GaN with a length of 0.41 micrometers and it is doped with Arsenic at a concentration of 898857041776923901952 cm^-3. The long gate region is of the material Silicon with a length of 0.53 micrometers and it is doped with Boron at a concentration of 970836831016583692288 cm^-3. The drain region is of the material SiGe with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 196479956812186845184 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.01)
(define Lgs 0.41)
(define Lgl 0.53)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.62)
(define Ld 0.62)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
274844966883942072320
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
898857041776923901952
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
970836831016583692288
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
196479956812186845184
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
104 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.63 micrometers and it is doped with Arsenic at a concentration of 289120569615023374336 cm^-3. The short gate region is of the material Diamond with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 185047974593590722560 cm^-3. The long gate region is of the material SiGe with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 106206666927407792128 cm^-3. The drain region is of the material SiGe with a length of 0.63 micrometers and it is doped with Boron at a concentration of 708403278477614120960 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.007)
(define Lgs 0.97)
(define Lgl 0.73)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.63)
(define Ld 0.63)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
289120569615023374336
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
185047974593590722560
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
106206666927407792128
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
708403278477614120960
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
105 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.26 micrometers and it is doped with Boron at a concentration of 431244055621000888320 cm^-3. The short gate region is of the material GaN with a length of 0.52 micrometers and it is doped with Phosphorus at a concentration of 867875466397670703104 cm^-3. The long gate region is of the material GaN with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 546664269191759265792 cm^-3. The drain region is of the material Silicon with a length of 0.26 micrometers and it is doped with Boron at a concentration of 535727529430620307456 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.008)
(define Lgs 0.52)
(define Lgl 0.22)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.26)
(define Ld 0.26)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
431244055621000888320
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
867875466397670703104
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
546664269191759265792
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
535727529430620307456
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
106 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.82 micrometers and it is doped with Boron at a concentration of 187396215441748459520 cm^-3. The short gate region is of the material SiGe with a length of 0.9 micrometers and it is doped with Boron at a concentration of 578332191871338545152 cm^-3. The long gate region is of the material GaN with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 981229338573601112064 cm^-3. The drain region is of the material SiGe with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 21449527472333737984 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.004)
(define Lgs 0.9)
(define Lgl 0.3)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.82)
(define Ld 0.82)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
187396215441748459520
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
578332191871338545152
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
981229338573601112064
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
21449527472333737984
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
107 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 225856391605866725376 cm^-3. The short gate region is of the material Germanium with a length of 0.54 micrometers and it is doped with Boron at a concentration of 973915199961677168640 cm^-3. The long gate region is of the material Germanium with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 343340930781020815360 cm^-3. The drain region is of the material GaN with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 121203666170366345216 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.005)
(define Lgs 0.54)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.73)
(define Ld 0.73)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
225856391605866725376
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
973915199961677168640
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
343340930781020815360
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
121203666170366345216
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
108 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.32 micrometers and it is doped with Boron at a concentration of 975057176318291607552 cm^-3. The short gate region is of the material Silicon with a length of 0.83 micrometers and it is doped with Boron at a concentration of 526602734704284794880 cm^-3. The long gate region is of the material Diamond with a length of 0.28 micrometers and it is doped with Phosphorus at a concentration of 738942374924545425408 cm^-3. The drain region is of the material Silicon with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 738430462006419914752 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.002)
(define Lgs 0.83)
(define Lgl 0.28)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.32)
(define Ld 0.32)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
975057176318291607552
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
526602734704284794880
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
738942374924545425408
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
738430462006419914752
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
109 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 864415649562535002112 cm^-3. The short gate region is of the material GaN with a length of 0.52 micrometers and it is doped with Arsenic at a concentration of 277088952081607393280 cm^-3. The long gate region is of the material Germanium with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 719188062942903271424 cm^-3. The drain region is of the material GaN with a length of 0.3 micrometers and it is doped with Boron at a concentration of 805103552199256440832 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.003)
(define Lgs 0.52)
(define Lgl 0.94)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.3)
(define Ld 0.3)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
864415649562535002112
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
277088952081607393280
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
719188062942903271424
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
805103552199256440832
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
110 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.51 micrometers and it is doped with Boron at a concentration of 877214432767082364928 cm^-3. The short gate region is of the material GaN with a length of 0.81 micrometers and it is doped with Arsenic at a concentration of 977087467984982376448 cm^-3. The long gate region is of the material SiGe with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 65460589944043847680 cm^-3. The drain region is of the material Silicon with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 335922020944970514432 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.009)
(define Lgs 0.81)
(define Lgl 0.41)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.51)
(define Ld 0.51)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
877214432767082364928
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
977087467984982376448
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
65460589944043847680
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
335922020944970514432
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
111 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.54 micrometers and it is doped with Boron at a concentration of 813485211734208937984 cm^-3. The short gate region is of the material GaN with a length of 0.3 micrometers and it is doped with Phosphorus at a concentration of 255448349463000449024 cm^-3. The long gate region is of the material GaN with a length of 1.0 micrometers and it is doped with Arsenic at a concentration of 990228476925018505216 cm^-3. The drain region is of the material GaN with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 965950007793223991296 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.003)
(define Lgs 0.3)
(define Lgl 1.0)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.54)
(define Ld 0.54)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
813485211734208937984
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
255448349463000449024
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
990228476925018505216
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
965950007793223991296
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
112 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 210913276613269454848 cm^-3. The short gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Boron at a concentration of 725425809591329488896 cm^-3. The long gate region is of the material Diamond with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 588858157573278924800 cm^-3. The drain region is of the material Germanium with a length of 0.37 micrometers and it is doped with Boron at a concentration of 623922252380854550528 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.006)
(define Lgs 0.34)
(define Lgl 0.15)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.37)
(define Ld 0.37)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
210913276613269454848
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
725425809591329488896
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
588858157573278924800
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
623922252380854550528
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
113 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 798838124714382589952 cm^-3. The short gate region is of the material Germanium with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 470915123045727469568 cm^-3. The long gate region is of the material Germanium with a length of 0.75 micrometers and it is doped with Arsenic at a concentration of 533659430458771898368 cm^-3. The drain region is of the material GaN with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 469164573865642950656 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.001)
(define Lgs 0.18)
(define Lgl 0.75)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.84)
(define Ld 0.84)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
798838124714382589952
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
470915123045727469568
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
533659430458771898368
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
469164573865642950656
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
114 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.82 micrometers and it is doped with Boron at a concentration of 125552866182158270464 cm^-3. The short gate region is of the material GaN with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 826265042215517159424 cm^-3. The long gate region is of the material GaN with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 749517382687887458304 cm^-3. The drain region is of the material GaN with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 104511238618531299328 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.76)
(define Lgl 0.59)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.82)
(define Ld 0.82)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
125552866182158270464
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
826265042215517159424
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
749517382687887458304
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
104511238618531299328
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
115 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 86135326384605036544 cm^-3. The short gate region is of the material SiGe with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 31316610773734895616 cm^-3. The long gate region is of the material SiGe with a length of 0.64 micrometers and it is doped with Boron at a concentration of 202327019949312933888 cm^-3. The drain region is of the material SiGe with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 378281551951753379840 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.008)
(define Lgs 0.04)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.61)
(define Ld 0.61)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
86135326384605036544
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
31316610773734895616
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
202327019949312933888
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
378281551951753379840
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
116 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 472046720764995436544 cm^-3. The short gate region is of the material Diamond with a length of 0.94 micrometers and it is doped with Boron at a concentration of 949416286500933861376 cm^-3. The long gate region is of the material Diamond with a length of 0.85 micrometers and it is doped with Boron at a concentration of 258990455302511099904 cm^-3. The drain region is of the material SiGe with a length of 0.7 micrometers and it is doped with Boron at a concentration of 722160097074871926784 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.01)
(define Lgs 0.94)
(define Lgl 0.85)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.7)
(define Ld 0.7)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
472046720764995436544
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
949416286500933861376
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
258990455302511099904
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
722160097074871926784
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
117 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 13851412691279665152 cm^-3. The short gate region is of the material GaN with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 44124697712715898880 cm^-3. The long gate region is of the material Diamond with a length of 0.68 micrometers and it is doped with Boron at a concentration of 874877628653421461504 cm^-3. The drain region is of the material Germanium with a length of 0.57 micrometers and it is doped with Boron at a concentration of 834950087020239781888 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.006)
(define Lgs 0.44)
(define Lgl 0.68)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.57)
(define Ld 0.57)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
13851412691279665152
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
44124697712715898880
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
874877628653421461504
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
834950087020239781888
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
118 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 13832037258955173888 cm^-3. The short gate region is of the material Germanium with a length of 0.97 micrometers and it is doped with Boron at a concentration of 465988307705179275264 cm^-3. The long gate region is of the material GaN with a length of 0.26 micrometers and it is doped with Boron at a concentration of 141776981942222651392 cm^-3. The drain region is of the material Germanium with a length of 0.57 micrometers and it is doped with Boron at a concentration of 767622730318759591936 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.009)
(define Lgs 0.97)
(define Lgl 0.26)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.57)
(define Ld 0.57)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
13832037258955173888
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
465988307705179275264
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
141776981942222651392
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
767622730318759591936
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
119 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.76 micrometers and it is doped with Boron at a concentration of 926950912971522441216 cm^-3. The short gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Phosphorus at a concentration of 856682626490158415872 cm^-3. The long gate region is of the material SiGe with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 317346965787337162752 cm^-3. The drain region is of the material GaN with a length of 0.76 micrometers and it is doped with Phosphorus at a concentration of 763654211091180552192 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.001)
(define Lgs 0.86)
(define Lgl 0.46)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.76)
(define Ld 0.76)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
926950912971522441216
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
856682626490158415872
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
317346965787337162752
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
763654211091180552192
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
120 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.45 micrometers and it is doped with Boron at a concentration of 338331726645193080832 cm^-3. The short gate region is of the material Diamond with a length of 0.52 micrometers and it is doped with Boron at a concentration of 815351492048894951424 cm^-3. The long gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 747213371233947222016 cm^-3. The drain region is of the material Diamond with a length of 0.45 micrometers and it is doped with Boron at a concentration of 952251128137562587136 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.004)
(define Lgs 0.52)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.45)
(define Ld 0.45)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
338331726645193080832
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
815351492048894951424
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
747213371233947222016
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
952251128137562587136
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
121 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 190901713548097748992 cm^-3. The short gate region is of the material Silicon with a length of 0.53 micrometers and it is doped with Phosphorus at a concentration of 794502601485077839872 cm^-3. The long gate region is of the material Silicon with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 84118973009238900736 cm^-3. The drain region is of the material Diamond with a length of 0.8 micrometers and it is doped with Phosphorus at a concentration of 883531415981004554240 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.007)
(define Lgs 0.53)
(define Lgl 0.11)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.8)
(define Ld 0.8)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
190901713548097748992
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
794502601485077839872
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
84118973009238900736
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
883531415981004554240
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
122 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 745098460787931348992 cm^-3. The short gate region is of the material Diamond with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 895237166514961645568 cm^-3. The long gate region is of the material SiGe with a length of 0.94 micrometers and it is doped with Phosphorus at a concentration of 246274308515387736064 cm^-3. The drain region is of the material GaN with a length of 0.36 micrometers and it is doped with Boron at a concentration of 806948833362947080192 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.003)
(define Lgs 0.44)
(define Lgl 0.94)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.36)
(define Ld 0.36)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
745098460787931348992
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
895237166514961645568
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
246274308515387736064
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
806948833362947080192
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
123 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 243743790691078832128 cm^-3. The short gate region is of the material Diamond with a length of 0.52 micrometers and it is doped with Boron at a concentration of 592165705978560774144 cm^-3. The long gate region is of the material Diamond with a length of 0.35 micrometers and it is doped with Boron at a concentration of 880623576079504506880 cm^-3. The drain region is of the material Germanium with a length of 0.02 micrometers and it is doped with Arsenic at a concentration of 650906701899753455616 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.007)
(define Lgs 0.52)
(define Lgl 0.35)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.02)
(define Ld 0.02)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
243743790691078832128
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
592165705978560774144
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
880623576079504506880
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
650906701899753455616
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
124 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.99 micrometers and it is doped with Boron at a concentration of 278953349608555741184 cm^-3. The short gate region is of the material Silicon with a length of 0.6 micrometers and it is doped with Phosphorus at a concentration of 177931553902169587712 cm^-3. The long gate region is of the material Silicon with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 610484653716969095168 cm^-3. The drain region is of the material GaN with a length of 0.99 micrometers and it is doped with Phosphorus at a concentration of 803201961846182641664 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.002)
(define Lgs 0.6)
(define Lgl 0.82)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.99)
(define Ld 0.99)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
278953349608555741184
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
177931553902169587712
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
610484653716969095168
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
803201961846182641664
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
125 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.56 micrometers and it is doped with Boron at a concentration of 300026043604343848960 cm^-3. The short gate region is of the material Silicon with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 740963001596811542528 cm^-3. The long gate region is of the material Diamond with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 114512188703281479680 cm^-3. The drain region is of the material Silicon with a length of 0.56 micrometers and it is doped with Boron at a concentration of 107459335017454944256 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.005)
(define Lgs 0.32)
(define Lgl 0.92)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.56)
(define Ld 0.56)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
300026043604343848960
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
740963001596811542528
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
114512188703281479680
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
107459335017454944256
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
126 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 537653352189873356800 cm^-3. The short gate region is of the material SiGe with a length of 0.03 micrometers and it is doped with Boron at a concentration of 311292984800649805824 cm^-3. The long gate region is of the material Germanium with a length of 0.33 micrometers and it is doped with Arsenic at a concentration of 867224926041859162112 cm^-3. The drain region is of the material SiGe with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 589164163255827562496 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.005)
(define Lgs 0.03)
(define Lgl 0.33)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.45)
(define Ld 0.45)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
537653352189873356800
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
311292984800649805824
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
867224926041859162112
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
589164163255827562496
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
127 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 805926851692285919232 cm^-3. The short gate region is of the material Silicon with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 403476680077608091648 cm^-3. The long gate region is of the material SiGe with a length of 0.91 micrometers and it is doped with Boron at a concentration of 144834659493649088512 cm^-3. The drain region is of the material SiGe with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 33100621540896563200 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.002)
(define Lgs 0.92)
(define Lgl 0.91)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.82)
(define Ld 0.82)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
805926851692285919232
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
403476680077608091648
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
144834659493649088512
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
33100621540896563200
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
128 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.03 micrometers and it is doped with Arsenic at a concentration of 195672869804549177344 cm^-3. The short gate region is of the material Germanium with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 90487280095019499520 cm^-3. The long gate region is of the material SiGe with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 515033189820419801088 cm^-3. The drain region is of the material SiGe with a length of 0.03 micrometers and it is doped with Boron at a concentration of 400648580969582821376 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.009)
(define Lgs 0.43)
(define Lgl 0.16)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.03)
(define Ld 0.03)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
195672869804549177344
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
90487280095019499520
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
515033189820419801088
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
400648580969582821376
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
129 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.37 micrometers and it is doped with Boron at a concentration of 174818586916368056320 cm^-3. The short gate region is of the material GaN with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 767433542134869393408 cm^-3. The long gate region is of the material Silicon with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 418586411839053496320 cm^-3. The drain region is of the material Diamond with a length of 0.37 micrometers and it is doped with Boron at a concentration of 440528011394396979200 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.01)
(define Lgs 0.25)
(define Lgl 0.55)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.37)
(define Ld 0.37)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
174818586916368056320
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
767433542134869393408
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
418586411839053496320
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
440528011394396979200
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
130 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 1.0 micrometers and it is doped with Boron at a concentration of 637747952681522429952 cm^-3. The short gate region is of the material Silicon with a length of 0.94 micrometers and it is doped with Boron at a concentration of 593909434744044781568 cm^-3. The long gate region is of the material Silicon with a length of 0.17 micrometers and it is doped with Boron at a concentration of 399921084092366716928 cm^-3. The drain region is of the material GaN with a length of 1.0 micrometers and it is doped with Boron at a concentration of 682983846403084124160 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.003)
(define Lgs 0.94)
(define Lgl 0.17)
(define Ltotal (+ Lgs Lgl))
(define Ls 1.0)
(define Ld 1.0)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
637747952681522429952
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
593909434744044781568
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
399921084092366716928
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
682983846403084124160
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
131 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.58 micrometers and it is doped with Phosphorus at a concentration of 206658234394061242368 cm^-3. The short gate region is of the material Silicon with a length of 0.93 micrometers and it is doped with Boron at a concentration of 384699618626346549248 cm^-3. The long gate region is of the material Diamond with a length of 0.39 micrometers and it is doped with Phosphorus at a concentration of 383120073439878840320 cm^-3. The drain region is of the material Germanium with a length of 0.58 micrometers and it is doped with Boron at a concentration of 314797786506704191488 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.009)
(define Lgs 0.93)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.58)
(define Ld 0.58)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
206658234394061242368
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
384699618626346549248
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
383120073439878840320
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
314797786506704191488
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
132 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.65 micrometers and it is doped with Phosphorus at a concentration of 949248685040440967168 cm^-3. The short gate region is of the material SiGe with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 947061252972308725760 cm^-3. The long gate region is of the material Silicon with a length of 0.62 micrometers and it is doped with Arsenic at a concentration of 153543299859889600 cm^-3. The drain region is of the material Diamond with a length of 0.65 micrometers and it is doped with Phosphorus at a concentration of 48438899907089104896 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.008)
(define Lgs 0.84)
(define Lgl 0.62)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.65)
(define Ld 0.65)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
949248685040440967168
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
947061252972308725760
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
153543299859889600
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
48438899907089104896
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
133 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.02 micrometers and it is doped with Phosphorus at a concentration of 915717927534707867648 cm^-3. The short gate region is of the material Diamond with a length of 0.3 micrometers and it is doped with Arsenic at a concentration of 234045671353984057344 cm^-3. The long gate region is of the material Silicon with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 935759912865260896256 cm^-3. The drain region is of the material SiGe with a length of 0.02 micrometers and it is doped with Boron at a concentration of 424287248688481042432 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.003)
(define Lgs 0.3)
(define Lgl 0.68)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.02)
(define Ld 0.02)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
915717927534707867648
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
234045671353984057344
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
935759912865260896256
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
424287248688481042432
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
134 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 667657636131610951680 cm^-3. The short gate region is of the material Silicon with a length of 0.12 micrometers and it is doped with Arsenic at a concentration of 35891937941813776384 cm^-3. The long gate region is of the material GaN with a length of 0.29 micrometers and it is doped with Phosphorus at a concentration of 457533250973049290752 cm^-3. The drain region is of the material Diamond with a length of 0.59 micrometers and it is doped with Phosphorus at a concentration of 891319044465828298752 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.009)
(define Lgs 0.12)
(define Lgl 0.29)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.59)
(define Ld 0.59)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
667657636131610951680
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
35891937941813776384
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
457533250973049290752
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
891319044465828298752
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
135 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.36 micrometers and it is doped with Boron at a concentration of 957642162606698397696 cm^-3. The short gate region is of the material Silicon with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 766534862338058354688 cm^-3. The long gate region is of the material Diamond with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 53889602716602048512 cm^-3. The drain region is of the material Silicon with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 318688352206580482048 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.004)
(define Lgs 0.34)
(define Lgl 0.93)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.36)
(define Ld 0.36)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
957642162606698397696
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
766534862338058354688
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
53889602716602048512
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
318688352206580482048
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
136 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.51 micrometers and it is doped with Boron at a concentration of 790810529767689551872 cm^-3. The short gate region is of the material Germanium with a length of 0.9 micrometers and it is doped with Boron at a concentration of 821297073998988574720 cm^-3. The long gate region is of the material Silicon with a length of 0.75 micrometers and it is doped with Phosphorus at a concentration of 530676549089846362112 cm^-3. The drain region is of the material Diamond with a length of 0.51 micrometers and it is doped with Phosphorus at a concentration of 284878290997266219008 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.001)
(define Lgs 0.9)
(define Lgl 0.75)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.51)
(define Ld 0.51)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
790810529767689551872
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
821297073998988574720
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
530676549089846362112
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
284878290997266219008
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
137 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.89 micrometers and it is doped with Boron at a concentration of 620206378650054557696 cm^-3. The short gate region is of the material Germanium with a length of 0.82 micrometers and it is doped with Boron at a concentration of 265769370380886474752 cm^-3. The long gate region is of the material Diamond with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 501825173387531517952 cm^-3. The drain region is of the material GaN with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 830057751382182854656 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.008)
(define Lgs 0.82)
(define Lgl 0.28)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.89)
(define Ld 0.89)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
620206378650054557696
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
265769370380886474752
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
501825173387531517952
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
830057751382182854656
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
138 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 667904939241264906240 cm^-3. The short gate region is of the material SiGe with a length of 0.53 micrometers and it is doped with Arsenic at a concentration of 174191473248409780224 cm^-3. The long gate region is of the material Germanium with a length of 0.67 micrometers and it is doped with Arsenic at a concentration of 839368532349699751936 cm^-3. The drain region is of the material SiGe with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 466870922255889727488 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.001)
(define Lgs 0.53)
(define Lgl 0.67)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.17)
(define Ld 0.17)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
667904939241264906240
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
174191473248409780224
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
839368532349699751936
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
466870922255889727488
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
139 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.55 micrometers and it is doped with Boron at a concentration of 458967344056762892288 cm^-3. The short gate region is of the material SiGe with a length of 0.96 micrometers and it is doped with Arsenic at a concentration of 471144409740327780352 cm^-3. The long gate region is of the material Diamond with a length of 0.24 micrometers and it is doped with Boron at a concentration of 610882108285173891072 cm^-3. The drain region is of the material SiGe with a length of 0.55 micrometers and it is doped with Phosphorus at a concentration of 43879006832843300864 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.009)
(define Lgs 0.96)
(define Lgl 0.24)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.55)
(define Ld 0.55)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
458967344056762892288
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
471144409740327780352
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
610882108285173891072
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
43879006832843300864
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
140 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.05 micrometers and it is doped with Boron at a concentration of 313416745188488642560 cm^-3. The short gate region is of the material Diamond with a length of 0.03 micrometers and it is doped with Phosphorus at a concentration of 100654913722925285376 cm^-3. The long gate region is of the material Diamond with a length of 0.22 micrometers and it is doped with Phosphorus at a concentration of 181006528622625554432 cm^-3. The drain region is of the material SiGe with a length of 0.05 micrometers and it is doped with Boron at a concentration of 252625999941998870528 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.008)
(define Lgs 0.03)
(define Lgl 0.22)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.05)
(define Ld 0.05)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
313416745188488642560
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
100654913722925285376
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
181006528622625554432
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
252625999941998870528
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
141 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.7 micrometers and it is doped with Boron at a concentration of 569916434850618933248 cm^-3. The short gate region is of the material Germanium with a length of 0.16 micrometers and it is doped with Boron at a concentration of 206586035863373086720 cm^-3. The long gate region is of the material SiGe with a length of 0.2 micrometers and it is doped with Boron at a concentration of 429620698147273572352 cm^-3. The drain region is of the material Diamond with a length of 0.7 micrometers and it is doped with Boron at a concentration of 837202403458825453568 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.006)
(define Lgs 0.16)
(define Lgl 0.2)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.7)
(define Ld 0.7)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
569916434850618933248
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
206586035863373086720
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
429620698147273572352
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
837202403458825453568
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
142 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 797388149285380816896 cm^-3. The short gate region is of the material Diamond with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 944196917157391368192 cm^-3. The long gate region is of the material Diamond with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 127409737619356778496 cm^-3. The drain region is of the material Diamond with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 342132456334059634688 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.005)
(define Lgs 0.43)
(define Lgl 0.26)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.44)
(define Ld 0.44)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
797388149285380816896
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
944196917157391368192
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
127409737619356778496
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
342132456334059634688
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
143 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 712139191424574029824 cm^-3. The short gate region is of the material Germanium with a length of 0.48 micrometers and it is doped with Phosphorus at a concentration of 417202767259449688064 cm^-3. The long gate region is of the material SiGe with a length of 0.37 micrometers and it is doped with Phosphorus at a concentration of 142349000177149739008 cm^-3. The drain region is of the material Diamond with a length of 0.08 micrometers and it is doped with Phosphorus at a concentration of 676933620235688607744 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.002)
(define Lgs 0.48)
(define Lgl 0.37)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.08)
(define Ld 0.08)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
712139191424574029824
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
417202767259449688064
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
142349000177149739008
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
676933620235688607744
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
144 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.39 micrometers and it is doped with Arsenic at a concentration of 514062198475595317248 cm^-3. The short gate region is of the material SiGe with a length of 0.9 micrometers and it is doped with Boron at a concentration of 869920038406223953920 cm^-3. The long gate region is of the material GaN with a length of 0.39 micrometers and it is doped with Boron at a concentration of 621049470317440532480 cm^-3. The drain region is of the material SiGe with a length of 0.39 micrometers and it is doped with Boron at a concentration of 440859496769959755776 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.007)
(define Lgs 0.9)
(define Lgl 0.39)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.39)
(define Ld 0.39)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
514062198475595317248
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
869920038406223953920
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
621049470317440532480
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
440859496769959755776
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
145 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 474863206207224152064 cm^-3. The short gate region is of the material GaN with a length of 0.54 micrometers and it is doped with Phosphorus at a concentration of 539537900920461066240 cm^-3. The long gate region is of the material SiGe with a length of 0.17 micrometers and it is doped with Arsenic at a concentration of 445024301124744380416 cm^-3. The drain region is of the material GaN with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 333272726361673695232 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.006)
(define Lgs 0.54)
(define Lgl 0.17)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
474863206207224152064
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
539537900920461066240
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
445024301124744380416
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
333272726361673695232
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
146 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.05 micrometers and it is doped with Arsenic at a concentration of 657966017597761650688 cm^-3. The short gate region is of the material GaN with a length of 0.16 micrometers and it is doped with Arsenic at a concentration of 773011078843815428096 cm^-3. The long gate region is of the material Germanium with a length of 0.83 micrometers and it is doped with Phosphorus at a concentration of 316531488798833901568 cm^-3. The drain region is of the material Diamond with a length of 0.05 micrometers and it is doped with Boron at a concentration of 254746003780544692224 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.008)
(define Lgs 0.16)
(define Lgl 0.83)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.05)
(define Ld 0.05)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
657966017597761650688
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
773011078843815428096
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
316531488798833901568
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
254746003780544692224
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
147 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 318645242554102317056 cm^-3. The short gate region is of the material Diamond with a length of 0.64 micrometers and it is doped with Boron at a concentration of 819179348142732345344 cm^-3. The long gate region is of the material Diamond with a length of 0.62 micrometers and it is doped with Phosphorus at a concentration of 294107675075755769856 cm^-3. The drain region is of the material GaN with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 592410928103601995776 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.005)
(define Lgs 0.64)
(define Lgl 0.62)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.93)
(define Ld 0.93)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
318645242554102317056
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
819179348142732345344
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
294107675075755769856
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
592410928103601995776
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
148 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.5 micrometers and it is doped with Arsenic at a concentration of 109909688644027990016 cm^-3. The short gate region is of the material Diamond with a length of 0.23 micrometers and it is doped with Boron at a concentration of 125682844336190373888 cm^-3. The long gate region is of the material Germanium with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 249957795668206059520 cm^-3. The drain region is of the material Diamond with a length of 0.5 micrometers and it is doped with Phosphorus at a concentration of 149618305751498293248 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.003)
(define Lgs 0.23)
(define Lgl 0.1)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.5)
(define Ld 0.5)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
109909688644027990016
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
125682844336190373888
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
249957795668206059520
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
149618305751498293248
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
149 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 373259333660447342592 cm^-3. The short gate region is of the material Germanium with a length of 0.78 micrometers and it is doped with Boron at a concentration of 486571858314175184896 cm^-3. The long gate region is of the material Diamond with a length of 0.96 micrometers and it is doped with Phosphorus at a concentration of 816312365639433584640 cm^-3. The drain region is of the material Diamond with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 38507061599515951104 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.005)
(define Lgs 0.78)
(define Lgl 0.96)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.72)
(define Ld 0.72)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
373259333660447342592
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
486571858314175184896
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
816312365639433584640
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
38507061599515951104
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
150 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 846096597739483168768 cm^-3. The short gate region is of the material Silicon with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 605027122416586194944 cm^-3. The long gate region is of the material SiGe with a length of 0.79 micrometers and it is doped with Boron at a concentration of 80647082023779729408 cm^-3. The drain region is of the material SiGe with a length of 0.73 micrometers and it is doped with Arsenic at a concentration of 763515725345293991936 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.006)
(define Lgs 0.21)
(define Lgl 0.79)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.73)
(define Ld 0.73)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
846096597739483168768
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
605027122416586194944
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
80647082023779729408
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
763515725345293991936
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
151 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.74 micrometers and it is doped with Boron at a concentration of 280428173895418216448 cm^-3. The short gate region is of the material GaN with a length of 0.7 micrometers and it is doped with Arsenic at a concentration of 139474848421338284032 cm^-3. The long gate region is of the material Germanium with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 830200126400327581696 cm^-3. The drain region is of the material Germanium with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 848897905765982797824 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.004)
(define Lgs 0.7)
(define Lgl 0.26)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
280428173895418216448
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
139474848421338284032
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
830200126400327581696
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
848897905765982797824
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
152 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.36 micrometers and it is doped with Boron at a concentration of 883354630531040542720 cm^-3. The short gate region is of the material Germanium with a length of 0.43 micrometers and it is doped with Boron at a concentration of 814226836405503393792 cm^-3. The long gate region is of the material Germanium with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 29533894222387159040 cm^-3. The drain region is of the material Germanium with a length of 0.36 micrometers and it is doped with Boron at a concentration of 93596442815475400704 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.009)
(define Lgs 0.43)
(define Lgl 0.46)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.36)
(define Ld 0.36)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
883354630531040542720
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
814226836405503393792
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
29533894222387159040
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
93596442815475400704
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
153 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.58 micrometers and it is doped with Boron at a concentration of 958744744820761821184 cm^-3. The short gate region is of the material Germanium with a length of 0.27 micrometers and it is doped with Phosphorus at a concentration of 29797608373375709184 cm^-3. The long gate region is of the material Silicon with a length of 0.71 micrometers and it is doped with Boron at a concentration of 427797373046541647872 cm^-3. The drain region is of the material GaN with a length of 0.58 micrometers and it is doped with Arsenic at a concentration of 325747802959028420608 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.01)
(define Lgs 0.27)
(define Lgl 0.71)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.58)
(define Ld 0.58)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
958744744820761821184
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
29797608373375709184
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
427797373046541647872
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
325747802959028420608
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
154 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.13 micrometers and it is doped with Phosphorus at a concentration of 946167956199018987520 cm^-3. The short gate region is of the material SiGe with a length of 0.79 micrometers and it is doped with Boron at a concentration of 216622778660371202048 cm^-3. The long gate region is of the material Diamond with a length of 0.85 micrometers and it is doped with Boron at a concentration of 511541877625176719360 cm^-3. The drain region is of the material SiGe with a length of 0.13 micrometers and it is doped with Boron at a concentration of 974856264288630210560 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.007)
(define Lgs 0.79)
(define Lgl 0.85)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.13)
(define Ld 0.13)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
946167956199018987520
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
216622778660371202048
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
511541877625176719360
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
974856264288630210560
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
155 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 488154232897054834688 cm^-3. The short gate region is of the material SiGe with a length of 0.43 micrometers and it is doped with Phosphorus at a concentration of 122944881006722072576 cm^-3. The long gate region is of the material SiGe with a length of 0.3 micrometers and it is doped with Boron at a concentration of 432718819945463283712 cm^-3. The drain region is of the material Germanium with a length of 0.71 micrometers and it is doped with Boron at a concentration of 829014511565869023232 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.008)
(define Lgs 0.43)
(define Lgl 0.3)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
488154232897054834688
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
122944881006722072576
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
432718819945463283712
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
829014511565869023232
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
156 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.16 micrometers and it is doped with Boron at a concentration of 422271509944118149120 cm^-3. The short gate region is of the material SiGe with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 967353000663485906944 cm^-3. The long gate region is of the material SiGe with a length of 0.15 micrometers and it is doped with Boron at a concentration of 300511657478466043904 cm^-3. The drain region is of the material GaN with a length of 0.16 micrometers and it is doped with Boron at a concentration of 564443860659127058432 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.009)
(define Lgs 0.97)
(define Lgl 0.15)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.16)
(define Ld 0.16)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
422271509944118149120
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
967353000663485906944
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
300511657478466043904
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
564443860659127058432
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
157 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.14 micrometers and it is doped with Boron at a concentration of 444185824819747356672 cm^-3. The short gate region is of the material Diamond with a length of 0.98 micrometers and it is doped with Boron at a concentration of 976557045520411525120 cm^-3. The long gate region is of the material SiGe with a length of 0.21 micrometers and it is doped with Boron at a concentration of 241625004543484985344 cm^-3. The drain region is of the material Germanium with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 429055744230986743808 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.004)
(define Lgs 0.98)
(define Lgl 0.21)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.14)
(define Ld 0.14)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
444185824819747356672
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
976557045520411525120
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
241625004543484985344
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
429055744230986743808
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
158 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.17 micrometers and it is doped with Phosphorus at a concentration of 867304694110127390720 cm^-3. The short gate region is of the material GaN with a length of 0.36 micrometers and it is doped with Arsenic at a concentration of 966302915846698434560 cm^-3. The long gate region is of the material GaN with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 340042974961498718208 cm^-3. The drain region is of the material GaN with a length of 0.17 micrometers and it is doped with Boron at a concentration of 724212287413238759424 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.01)
(define Lgs 0.36)
(define Lgl 0.78)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.17)
(define Ld 0.17)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
867304694110127390720
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
966302915846698434560
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
340042974961498718208
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
724212287413238759424
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
159 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.15 micrometers and it is doped with Boron at a concentration of 466192839886735671296 cm^-3. The short gate region is of the material Germanium with a length of 0.56 micrometers and it is doped with Phosphorus at a concentration of 419929432702097817600 cm^-3. The long gate region is of the material SiGe with a length of 0.61 micrometers and it is doped with Phosphorus at a concentration of 109815160440412897280 cm^-3. The drain region is of the material Germanium with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 127768222816452935680 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.002)
(define Lgs 0.56)
(define Lgl 0.61)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.15)
(define Ld 0.15)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
466192839886735671296
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
419929432702097817600
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
109815160440412897280
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
127768222816452935680
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
160 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 9054695966939599872 cm^-3. The short gate region is of the material Silicon with a length of 0.07 micrometers and it is doped with Boron at a concentration of 787664363953363615744 cm^-3. The long gate region is of the material Silicon with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 443789826913516519424 cm^-3. The drain region is of the material Silicon with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 152590790757045043200 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.008)
(define Lgs 0.07)
(define Lgl 0.14)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.24)
(define Ld 0.24)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
9054695966939599872
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
787664363953363615744
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
443789826913516519424
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
152590790757045043200
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
161 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.35 micrometers and it is doped with Phosphorus at a concentration of 286857162994777194496 cm^-3. The short gate region is of the material Diamond with a length of 0.15 micrometers and it is doped with Arsenic at a concentration of 538617757655308566528 cm^-3. The long gate region is of the material SiGe with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 622496442964930592768 cm^-3. The drain region is of the material Silicon with a length of 0.35 micrometers and it is doped with Boron at a concentration of 120633666936909070336 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.001 micrometers.
| (define tox 0.004)
(define Lgs 0.15)
(define Lgl 0.66)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.35)
(define Ld 0.35)
(define Rl 0.001)
(define Rs 0.001)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
286857162994777194496
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
538617757655308566528
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
622496442964930592768
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
120633666936909070336
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
162 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.51 micrometers and it is doped with Arsenic at a concentration of 360994565407523602432 cm^-3. The short gate region is of the material SiGe with a length of 0.6 micrometers and it is doped with Boron at a concentration of 210815714170917224448 cm^-3. The long gate region is of the material Diamond with a length of 0.64 micrometers and it is doped with Phosphorus at a concentration of 611378381150289133568 cm^-3. The drain region is of the material Germanium with a length of 0.51 micrometers and it is doped with Boron at a concentration of 968969252744003059712 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.003)
(define Lgs 0.6)
(define Lgl 0.64)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.51)
(define Ld 0.51)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
360994565407523602432
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
210815714170917224448
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
611378381150289133568
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
968969252744003059712
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
163 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.31 micrometers and it is doped with Arsenic at a concentration of 94692321163968462848 cm^-3. The short gate region is of the material Germanium with a length of 0.22 micrometers and it is doped with Arsenic at a concentration of 121083126956886769664 cm^-3. The long gate region is of the material Germanium with a length of 0.49 micrometers and it is doped with Boron at a concentration of 109354072174681473024 cm^-3. The drain region is of the material Germanium with a length of 0.31 micrometers and it is doped with Boron at a concentration of 961736858965219213312 cm^-3. The gate oxide thickness is 0.004 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.004)
(define Lgs 0.22)
(define Lgl 0.49)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.31)
(define Ld 0.31)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
94692321163968462848
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
121083126956886769664
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
109354072174681473024
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
961736858965219213312
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
164 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.79 micrometers and it is doped with Boron at a concentration of 672964375500376899584 cm^-3. The short gate region is of the material Silicon with a length of 0.93 micrometers and it is doped with Boron at a concentration of 44834216693551915008 cm^-3. The long gate region is of the material Germanium with a length of 0.98 micrometers and it is doped with Phosphorus at a concentration of 286374069804931252224 cm^-3. The drain region is of the material GaN with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 546532593495668686848 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.01)
(define Lgs 0.93)
(define Lgl 0.98)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.79)
(define Ld 0.79)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
672964375500376899584
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
44834216693551915008
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
286374069804931252224
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
546532593495668686848
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
165 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 631249100033440874496 cm^-3. The short gate region is of the material Germanium with a length of 0.56 micrometers and it is doped with Arsenic at a concentration of 186390858689589575680 cm^-3. The long gate region is of the material Diamond with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 3831718347622502912 cm^-3. The drain region is of the material Silicon with a length of 0.43 micrometers and it is doped with Arsenic at a concentration of 317603506559764398080 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.009)
(define Lgs 0.56)
(define Lgl 0.68)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.43)
(define Ld 0.43)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
631249100033440874496
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
186390858689589575680
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
3831718347622502912
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
317603506559764398080
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
166 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.44 micrometers and it is doped with Arsenic at a concentration of 495487504826127089664 cm^-3. The short gate region is of the material Silicon with a length of 0.09 micrometers and it is doped with Boron at a concentration of 332252699787707023360 cm^-3. The long gate region is of the material Diamond with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 213084554112062685184 cm^-3. The drain region is of the material GaN with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 762404966340389240832 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.01)
(define Lgs 0.09)
(define Lgl 0.11)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.44)
(define Ld 0.44)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
495487504826127089664
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
332252699787707023360
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
213084554112062685184
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
762404966340389240832
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
167 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.15 micrometers and it is doped with Phosphorus at a concentration of 401961789932834652160 cm^-3. The short gate region is of the material GaN with a length of 0.28 micrometers and it is doped with Arsenic at a concentration of 815020087269688082432 cm^-3. The long gate region is of the material Silicon with a length of 0.05 micrometers and it is doped with Boron at a concentration of 118960875939185295360 cm^-3. The drain region is of the material Diamond with a length of 0.15 micrometers and it is doped with Boron at a concentration of 706742037765672140800 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.006)
(define Lgs 0.28)
(define Lgl 0.05)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.15)
(define Ld 0.15)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
401961789932834652160
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
815020087269688082432
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
118960875939185295360
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
706742037765672140800
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
168 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 482818389166889893888 cm^-3. The short gate region is of the material GaN with a length of 0.45 micrometers and it is doped with Arsenic at a concentration of 475982370046159880192 cm^-3. The long gate region is of the material Germanium with a length of 0.07 micrometers and it is doped with Boron at a concentration of 619069625385863872512 cm^-3. The drain region is of the material SiGe with a length of 0.78 micrometers and it is doped with Phosphorus at a concentration of 114390334590203445248 cm^-3. The gate oxide thickness is 0.007 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.007)
(define Lgs 0.45)
(define Lgl 0.07)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.78)
(define Ld 0.78)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
482818389166889893888
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
475982370046159880192
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
619069625385863872512
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
114390334590203445248
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
169 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.57 micrometers and it is doped with Phosphorus at a concentration of 232686260182453747712 cm^-3. The short gate region is of the material SiGe with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 324047091427228909568 cm^-3. The long gate region is of the material SiGe with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 873745409985285455872 cm^-3. The drain region is of the material Silicon with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 719678167477935407104 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.003)
(define Lgs 0.09)
(define Lgl 0.92)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.57)
(define Ld 0.57)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
232686260182453747712
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
324047091427228909568
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
873745409985285455872
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
719678167477935407104
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
170 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 195649415363186753536 cm^-3. The short gate region is of the material Germanium with a length of 0.47 micrometers and it is doped with Arsenic at a concentration of 794754302973167271936 cm^-3. The long gate region is of the material SiGe with a length of 0.76 micrometers and it is doped with Arsenic at a concentration of 278490792197221253120 cm^-3. The drain region is of the material SiGe with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 439453013595781595136 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.003)
(define Lgs 0.47)
(define Lgl 0.76)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.46)
(define Ld 0.46)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
195649415363186753536
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
794754302973167271936
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
278490792197221253120
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
439453013595781595136
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
171 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 423166003026403786752 cm^-3. The short gate region is of the material Diamond with a length of 0.83 micrometers and it is doped with Boron at a concentration of 280040826379788451840 cm^-3. The long gate region is of the material Silicon with a length of 0.09 micrometers and it is doped with Boron at a concentration of 811671869510455918592 cm^-3. The drain region is of the material SiGe with a length of 0.79 micrometers and it is doped with Boron at a concentration of 435032531361222754304 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.003)
(define Lgs 0.83)
(define Lgl 0.09)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.79)
(define Ld 0.79)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
423166003026403786752
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
280040826379788451840
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
811671869510455918592
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
435032531361222754304
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
172 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.72 micrometers and it is doped with Arsenic at a concentration of 813711824297447784448 cm^-3. The short gate region is of the material Germanium with a length of 0.77 micrometers and it is doped with Boron at a concentration of 223752942893521108992 cm^-3. The long gate region is of the material SiGe with a length of 0.82 micrometers and it is doped with Boron at a concentration of 656379067710841552896 cm^-3. The drain region is of the material SiGe with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 592458879696442621952 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.003)
(define Lgs 0.77)
(define Lgl 0.82)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.72)
(define Ld 0.72)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
813711824297447784448
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
223752942893521108992
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
656379067710841552896
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
592458879696442621952
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
173 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 546785614500546609152 cm^-3. The short gate region is of the material GaN with a length of 0.45 micrometers and it is doped with Phosphorus at a concentration of 299021757676270256128 cm^-3. The long gate region is of the material Germanium with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 762251205121248329728 cm^-3. The drain region is of the material SiGe with a length of 0.78 micrometers and it is doped with Boron at a concentration of 266539134087076904960 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.003)
(define Lgs 0.45)
(define Lgl 0.1)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.78)
(define Ld 0.78)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
546785614500546609152
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
299021757676270256128
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
762251205121248329728
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
266539134087076904960
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
174 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.32 micrometers and it is doped with Boron at a concentration of 521142074023821967360 cm^-3. The short gate region is of the material Silicon with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 930887620564296269824 cm^-3. The long gate region is of the material GaN with a length of 0.15 micrometers and it is doped with Boron at a concentration of 212377666222145961984 cm^-3. The drain region is of the material Silicon with a length of 0.32 micrometers and it is doped with Arsenic at a concentration of 944145487375462432768 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.002)
(define Lgs 0.38)
(define Lgl 0.15)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.32)
(define Ld 0.32)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
521142074023821967360
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
930887620564296269824
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
212377666222145961984
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
944145487375462432768
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
175 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.1 micrometers and it is doped with Phosphorus at a concentration of 331108735836354772992 cm^-3. The short gate region is of the material Silicon with a length of 0.24 micrometers and it is doped with Phosphorus at a concentration of 874968050104596037632 cm^-3. The long gate region is of the material GaN with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 6150819395372061696 cm^-3. The drain region is of the material SiGe with a length of 0.1 micrometers and it is doped with Boron at a concentration of 673047095265105018880 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.002)
(define Lgs 0.24)
(define Lgl 0.92)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.1)
(define Ld 0.1)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
331108735836354772992
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
874968050104596037632
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
6150819395372061696
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
673047095265105018880
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
176 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.82 micrometers and it is doped with Phosphorus at a concentration of 692925776507204141056 cm^-3. The short gate region is of the material Germanium with a length of 0.97 micrometers and it is doped with Boron at a concentration of 869950039331014836224 cm^-3. The long gate region is of the material Germanium with a length of 0.42 micrometers and it is doped with Boron at a concentration of 93215477831067303936 cm^-3. The drain region is of the material SiGe with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 699488178356745797632 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.005)
(define Lgs 0.97)
(define Lgl 0.42)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.82)
(define Ld 0.82)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
692925776507204141056
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
869950039331014836224
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
93215477831067303936
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
699488178356745797632
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
177 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.76 micrometers and it is doped with Boron at a concentration of 57028223835557396480 cm^-3. The short gate region is of the material Silicon with a length of 0.48 micrometers and it is doped with Arsenic at a concentration of 923712834056891793408 cm^-3. The long gate region is of the material GaN with a length of 0.69 micrometers and it is doped with Phosphorus at a concentration of 660058762201747816448 cm^-3. The drain region is of the material GaN with a length of 0.76 micrometers and it is doped with Boron at a concentration of 701313050157318930432 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.006)
(define Lgs 0.48)
(define Lgl 0.69)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.76)
(define Ld 0.76)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
57028223835557396480
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
923712834056891793408
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
660058762201747816448
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
701313050157318930432
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
178 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 967352757382876626944 cm^-3. The short gate region is of the material Silicon with a length of 0.49 micrometers and it is doped with Arsenic at a concentration of 179499449918523375616 cm^-3. The long gate region is of the material Diamond with a length of 0.82 micrometers and it is doped with Arsenic at a concentration of 484208292965173297152 cm^-3. The drain region is of the material GaN with a length of 0.34 micrometers and it is doped with Phosphorus at a concentration of 150264680996224892928 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.01)
(define Lgs 0.49)
(define Lgl 0.82)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.34)
(define Ld 0.34)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
967352757382876626944
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
179499449918523375616
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
484208292965173297152
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
150264680996224892928
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
179 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 211424409735375781888 cm^-3. The short gate region is of the material Silicon with a length of 0.97 micrometers and it is doped with Boron at a concentration of 339193102664752168960 cm^-3. The long gate region is of the material GaN with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 406467561197660667904 cm^-3. The drain region is of the material GaN with a length of 0.78 micrometers and it is doped with Arsenic at a concentration of 392252674114546696192 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.01 micrometers.
| (define tox 0.01)
(define Lgs 0.97)
(define Lgl 0.84)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.78)
(define Ld 0.78)
(define Rl 0.01)
(define Rs 0.01)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
211424409735375781888
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
339193102664752168960
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
406467561197660667904
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
392252674114546696192
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
180 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 907889277806478884864 cm^-3. The short gate region is of the material Germanium with a length of 0.93 micrometers and it is doped with Phosphorus at a concentration of 385316964047257862144 cm^-3. The long gate region is of the material Silicon with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 404915091234882715648 cm^-3. The drain region is of the material Diamond with a length of 0.11 micrometers and it is doped with Arsenic at a concentration of 667877781912409997312 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.002)
(define Lgs 0.93)
(define Lgl 0.32)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.11)
(define Ld 0.11)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
907889277806478884864
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
385316964047257862144
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
404915091234882715648
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
667877781912409997312
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
181 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.09 micrometers and it is doped with Boron at a concentration of 140264875984195371008 cm^-3. The short gate region is of the material Silicon with a length of 0.41 micrometers and it is doped with Boron at a concentration of 82361516712867758080 cm^-3. The long gate region is of the material Diamond with a length of 0.16 micrometers and it is doped with Boron at a concentration of 642676295500516163584 cm^-3. The drain region is of the material Diamond with a length of 0.09 micrometers and it is doped with Boron at a concentration of 671897787688269381632 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.006)
(define Lgs 0.41)
(define Lgl 0.16)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.09)
(define Ld 0.09)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
140264875984195371008
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
82361516712867758080
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
642676295500516163584
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
671897787688269381632
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
182 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 397373065281891860480 cm^-3. The short gate region is of the material Silicon with a length of 0.09 micrometers and it is doped with Phosphorus at a concentration of 428218715455684476928 cm^-3. The long gate region is of the material Silicon with a length of 0.11 micrometers and it is doped with Phosphorus at a concentration of 896815314657360609280 cm^-3. The drain region is of the material SiGe with a length of 0.57 micrometers and it is doped with Arsenic at a concentration of 949334651803030913024 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.008)
(define Lgs 0.09)
(define Lgl 0.11)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.57)
(define Ld 0.57)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
397373065281891860480
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
428218715455684476928
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
896815314657360609280
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
949334651803030913024
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
183 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.31 micrometers and it is doped with Boron at a concentration of 661789982380634669056 cm^-3. The short gate region is of the material Germanium with a length of 0.79 micrometers and it is doped with Arsenic at a concentration of 800883402232740446208 cm^-3. The long gate region is of the material Diamond with a length of 0.68 micrometers and it is doped with Phosphorus at a concentration of 894149783623464779776 cm^-3. The drain region is of the material Germanium with a length of 0.31 micrometers and it is doped with Boron at a concentration of 191086940680223490048 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.008)
(define Lgs 0.79)
(define Lgl 0.68)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.31)
(define Ld 0.31)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
661789982380634669056
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
800883402232740446208
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
894149783623464779776
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
191086940680223490048
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
184 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.91 micrometers and it is doped with Boron at a concentration of 947182961796559273984 cm^-3. The short gate region is of the material Diamond with a length of 1.0 micrometers and it is doped with Phosphorus at a concentration of 611308697837229965312 cm^-3. The long gate region is of the material Germanium with a length of 0.32 micrometers and it is doped with Phosphorus at a concentration of 934657181077958950912 cm^-3. The drain region is of the material Germanium with a length of 0.91 micrometers and it is doped with Boron at a concentration of 45751640264485502976 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.002)
(define Lgs 1.0)
(define Lgl 0.32)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.91)
(define Ld 0.91)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
947182961796559273984
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
611308697837229965312
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
934657181077958950912
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
45751640264485502976
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
185 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.74 micrometers and it is doped with Boron at a concentration of 915429025211896430592 cm^-3. The short gate region is of the material Germanium with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 694423736611712139264 cm^-3. The long gate region is of the material Silicon with a length of 0.14 micrometers and it is doped with Phosphorus at a concentration of 480555738377249751040 cm^-3. The drain region is of the material Diamond with a length of 0.74 micrometers and it is doped with Phosphorus at a concentration of 118282310175416745984 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.008)
(define Lgs 0.55)
(define Lgl 0.14)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.74)
(define Ld 0.74)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
915429025211896430592
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
694423736611712139264
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
480555738377249751040
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
118282310175416745984
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
186 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 438515908610188640256 cm^-3. The short gate region is of the material Germanium with a length of 0.22 micrometers and it is doped with Boron at a concentration of 877035522675728711680 cm^-3. The long gate region is of the material SiGe with a length of 0.92 micrometers and it is doped with Arsenic at a concentration of 448516008380309831680 cm^-3. The drain region is of the material Silicon with a length of 0.26 micrometers and it is doped with Phosphorus at a concentration of 663687842317911719936 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.22)
(define Lgl 0.92)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.26)
(define Ld 0.26)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
438515908610188640256
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
877035522675728711680
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
448516008380309831680
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
663687842317911719936
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
187 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.84 micrometers and it is doped with Phosphorus at a concentration of 842268822488295145472 cm^-3. The short gate region is of the material SiGe with a length of 0.41 micrometers and it is doped with Phosphorus at a concentration of 533343944759678599168 cm^-3. The long gate region is of the material SiGe with a length of 0.77 micrometers and it is doped with Boron at a concentration of 562903268412104376320 cm^-3. The drain region is of the material Silicon with a length of 0.84 micrometers and it is doped with Arsenic at a concentration of 198209256259217653760 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.006 micrometers.
| (define tox 0.005)
(define Lgs 0.41)
(define Lgl 0.77)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.84)
(define Ld 0.84)
(define Rl 0.006)
(define Rs 0.006)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
842268822488295145472
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
533343944759678599168
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
562903268412104376320
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
198209256259217653760
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
188 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.81 micrometers and it is doped with Phosphorus at a concentration of 254122553123088302080 cm^-3. The short gate region is of the material Germanium with a length of 0.04 micrometers and it is doped with Phosphorus at a concentration of 860932762761927983104 cm^-3. The long gate region is of the material Germanium with a length of 0.25 micrometers and it is doped with Arsenic at a concentration of 634652540141312671744 cm^-3. The drain region is of the material GaN with a length of 0.81 micrometers and it is doped with Boron at a concentration of 850599141237103263744 cm^-3. The gate oxide thickness is 0.01 micrometers. The nanowire thickness is 0.007 micrometers.
| (define tox 0.01)
(define Lgs 0.04)
(define Lgl 0.25)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.81)
(define Ld 0.81)
(define Rl 0.007)
(define Rs 0.007)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
254122553123088302080
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
860932762761927983104
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
634652540141312671744
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
850599141237103263744
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
189 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.46 micrometers and it is doped with Phosphorus at a concentration of 525619069659447689216 cm^-3. The short gate region is of the material Silicon with a length of 0.92 micrometers and it is doped with Phosphorus at a concentration of 879829381932836585472 cm^-3. The long gate region is of the material Diamond with a length of 0.94 micrometers and it is doped with Boron at a concentration of 774343144490363650048 cm^-3. The drain region is of the material Germanium with a length of 0.46 micrometers and it is doped with Boron at a concentration of 527517919913523937280 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.008 micrometers.
| (define tox 0.008)
(define Lgs 0.92)
(define Lgl 0.94)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.46)
(define Ld 0.46)
(define Rl 0.008)
(define Rs 0.008)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Germanium" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
525619069659447689216
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
879829381932836585472
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
774343144490363650048
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
527517919913523937280
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
190 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.04 micrometers and it is doped with Arsenic at a concentration of 173049535661405863936 cm^-3. The short gate region is of the material Silicon with a length of 0.89 micrometers and it is doped with Phosphorus at a concentration of 485943718776036917248 cm^-3. The long gate region is of the material Silicon with a length of 0.51 micrometers and it is doped with Boron at a concentration of 683192599228146909184 cm^-3. The drain region is of the material Silicon with a length of 0.04 micrometers and it is doped with Boron at a concentration of 419348113097027354624 cm^-3. The gate oxide thickness is 0.009 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.009)
(define Lgs 0.89)
(define Lgl 0.51)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.04)
(define Ld 0.04)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Silicon" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
173049535661405863936
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
485943718776036917248
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Boron
683192599228146909184
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
419348113097027354624
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Boron
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
191 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 321953597061936971776 cm^-3. The short gate region is of the material GaN with a length of 0.21 micrometers and it is doped with Phosphorus at a concentration of 436637219293254647808 cm^-3. The long gate region is of the material SiGe with a length of 0.61 micrometers and it is doped with Arsenic at a concentration of 618309533583349645312 cm^-3. The drain region is of the material Diamond with a length of 0.38 micrometers and it is doped with Boron at a concentration of 586337367173661065216 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.003 micrometers.
| (define tox 0.005)
(define Lgs 0.21)
(define Lgl 0.61)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.38)
(define Ld 0.38)
(define Rl 0.003)
(define Rs 0.003)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "SiGe" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
321953597061936971776
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
436637219293254647808
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
618309533583349645312
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
586337367173661065216
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
192 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 326489432404216119296 cm^-3. The short gate region is of the material Diamond with a length of 0.73 micrometers and it is doped with Phosphorus at a concentration of 902164232831191613440 cm^-3. The long gate region is of the material Silicon with a length of 0.54 micrometers and it is doped with Arsenic at a concentration of 323422942842840285184 cm^-3. The drain region is of the material SiGe with a length of 0.44 micrometers and it is doped with Phosphorus at a concentration of 928421895586014822400 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.001)
(define Lgs 0.73)
(define Lgl 0.54)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.44)
(define Ld 0.44)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Diamond" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
326489432404216119296
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
902164232831191613440
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
323422942842840285184
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
928421895586014822400
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
193 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.95 micrometers and it is doped with Phosphorus at a concentration of 931680949189723291648 cm^-3. The short gate region is of the material Silicon with a length of 0.5 micrometers and it is doped with Boron at a concentration of 114949928966513016832 cm^-3. The long gate region is of the material GaN with a length of 0.72 micrometers and it is doped with Phosphorus at a concentration of 330068992050161516544 cm^-3. The drain region is of the material Diamond with a length of 0.95 micrometers and it is doped with Arsenic at a concentration of 330973284889669926912 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.002)
(define Lgs 0.5)
(define Lgl 0.72)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.95)
(define Ld 0.95)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
931680949189723291648
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
114949928966513016832
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
330068992050161516544
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
330973284889669926912
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
194 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material GaN with a length of 0.71 micrometers and it is doped with Arsenic at a concentration of 816668897111046225920 cm^-3. The short gate region is of the material SiGe with a length of 0.79 micrometers and it is doped with Phosphorus at a concentration of 175953148322309865472 cm^-3. The long gate region is of the material GaN with a length of 0.93 micrometers and it is doped with Arsenic at a concentration of 466652108891032911872 cm^-3. The drain region is of the material SiGe with a length of 0.71 micrometers and it is doped with Phosphorus at a concentration of 624675005541378162688 cm^-3. The gate oxide thickness is 0.003 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.003)
(define Lgs 0.79)
(define Lgl 0.93)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.71)
(define Ld 0.71)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "GaN" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "GaN" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Arsenic
816668897111046225920
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Phosphorus
175953148322309865472
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
466652108891032911872
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
624675005541378162688
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
195 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Germanium with a length of 0.88 micrometers and it is doped with Phosphorus at a concentration of 966907099106286239744 cm^-3. The short gate region is of the material Germanium with a length of 0.89 micrometers and it is doped with Arsenic at a concentration of 879795825439149391872 cm^-3. The long gate region is of the material Diamond with a length of 0.46 micrometers and it is doped with Arsenic at a concentration of 501572125232564404224 cm^-3. The drain region is of the material Diamond with a length of 0.88 micrometers and it is doped with Boron at a concentration of 121759580125916020736 cm^-3. The gate oxide thickness is 0.002 micrometers. The nanowire thickness is 0.009 micrometers.
| (define tox 0.002)
(define Lgs 0.89)
(define Lgl 0.46)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.88)
(define Ld 0.88)
(define Rl 0.009)
(define Rs 0.009)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Germanium" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
966907099106286239744
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
879795825439149391872
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
501572125232564404224
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
121759580125916020736
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
196 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Silicon with a length of 0.97 micrometers and it is doped with Phosphorus at a concentration of 641826999625980182528 cm^-3. The short gate region is of the material Silicon with a length of 0.22 micrometers and it is doped with Boron at a concentration of 915415975188830486528 cm^-3. The long gate region is of the material Germanium with a length of 0.38 micrometers and it is doped with Arsenic at a concentration of 670296157553569824768 cm^-3. The drain region is of the material SiGe with a length of 0.97 micrometers and it is doped with Boron at a concentration of 512783589310793646080 cm^-3. The gate oxide thickness is 0.008 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.008)
(define Lgs 0.22)
(define Lgl 0.38)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.97)
(define Ld 0.97)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Silicon" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Silicon" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Germanium" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "SiGe" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Phosphorus
641826999625980182528
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
915415975188830486528
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
670296157553569824768
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
512783589310793646080
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
197 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material Diamond with a length of 0.55 micrometers and it is doped with Boron at a concentration of 406878165138736414720 cm^-3. The short gate region is of the material SiGe with a length of 0.96 micrometers and it is doped with Boron at a concentration of 424216782314833182720 cm^-3. The long gate region is of the material Silicon with a length of 0.26 micrometers and it is doped with Arsenic at a concentration of 979358200039718256640 cm^-3. The drain region is of the material Diamond with a length of 0.55 micrometers and it is doped with Arsenic at a concentration of 11576017441481181184 cm^-3. The gate oxide thickness is 0.001 micrometers. The nanowire thickness is 0.002 micrometers.
| (define tox 0.001)
(define Lgs 0.96)
(define Lgl 0.26)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.55)
(define Ld 0.55)
(define Rl 0.002)
(define Rs 0.002)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "Diamond" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "SiGe" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Silicon" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
406878165138736414720
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
424216782314833182720
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
979358200039718256640
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Arsenic
11576017441481181184
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
198 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.66 micrometers and it is doped with Boron at a concentration of 321004555681614659584 cm^-3. The short gate region is of the material GaN with a length of 0.64 micrometers and it is doped with Boron at a concentration of 976801162190870413312 cm^-3. The long gate region is of the material Diamond with a length of 0.18 micrometers and it is doped with Phosphorus at a concentration of 210733948080645701632 cm^-3. The drain region is of the material Diamond with a length of 0.66 micrometers and it is doped with Phosphorus at a concentration of 90919245898046472192 cm^-3. The gate oxide thickness is 0.005 micrometers. The nanowire thickness is 0.004 micrometers.
| (define tox 0.005)
(define Lgs 0.64)
(define Lgl 0.18)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.66)
(define Ld 0.66)
(define Rl 0.004)
(define Rs 0.004)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "GaN" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "Diamond" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
321004555681614659584
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Boron
976801162190870413312
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Phosphorus
210733948080645701632
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Phosphorus
90919245898046472192
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Phosphorus
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
199 | This structure is a nanowire transistor. There are 5 main regions: the source, short gate, long gate, drain, and oxide. There are also 3 contacts: source, drain, and gate. The gate contact covers the short gate and long gate length. The source region is of the material SiGe with a length of 0.82 micrometers and it is doped with Boron at a concentration of 62038593368250703872 cm^-3. The short gate region is of the material Germanium with a length of 0.34 micrometers and it is doped with Arsenic at a concentration of 950627587783517274112 cm^-3. The long gate region is of the material Diamond with a length of 0.86 micrometers and it is doped with Arsenic at a concentration of 880222044041663479808 cm^-3. The drain region is of the material GaN with a length of 0.82 micrometers and it is doped with Boron at a concentration of 555452366255843049472 cm^-3. The gate oxide thickness is 0.006 micrometers. The nanowire thickness is 0.005 micrometers.
| (define tox 0.006)
(define Lgs 0.34)
(define Lgl 0.86)
(define Ltotal (+ Lgs Lgl))
(define Ls 0.82)
(define Ld 0.82)
(define Rl 0.005)
(define Rs 0.005)
(define Xmin 0)
(define Xmax (+ Ls Ltotal Ld))
(define tg 0.01)
(define Ymin 0)
(define Ymax Rl)
(define XSource (+ Xmin Ls))
(define XGates (+ XSource Lgs))
(define XGatel (+ XGates Lgl))
(sdegeo:create-rectangle (position Xmin Ymin 0) (position XSource Ymax 0) "SiGe" "R.Source")
(sdegeo:create-rectangle (position XSource Ymin 0) (position XGates Rs 0) "Germanium" "R.Short_Gate")
(sdegeo:create-rectangle (position XGates Ymin 0) (position XGatel Ymax 0) "Diamond" "R.Long_Gate")
(sdegeo:create-rectangle (position XGatel Ymin 0) (position Xmax Ymax 0) "GaN" "R.Drain")
; Old replaces New
(sdegeo:set-default-boolean "BAB")
(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax (+ Ymax tox) 0) "Oxide" "R.Oxide")
(define gatedummy (sdegeo:create-rectangle (position XSource Ymin 0) (position XGatel (+ Ymax tox tg) 0) "PolySilicon" "R.Gate"))
; Old replaces New
(sdegeo:set-default-boolean "BAB")
;(define dummy (sdegeo:create-rectangle (position XSource (+ Rs tox tg) 0) (position XGatel (+ Ymax tox tox tg) 0) "Metal" "R.Dummy"))
(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gatedummy "gate")
(sdegeo:delete-region gatedummy)
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmin (/ Ymax 2) 0)))) "source")
(sdegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-edges (list (car (find-edge-id (position Xmax (/ Ymax 2) 0)))) "drain")
; Constant doping profile in a given material
(define NAME "Body")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(define Boron "BoronActiveConcentration")
(define Phosphorus "PhosphorusActiveConcentration")
(define Arsenic "ArsenicActiveConcentration")
;-------------------------------------------------------------------------------
; Doping in Source
(sdedr:define-constant-profile
"Const.Source"
Boron
62038593368250703872
)
(sdedr:define-constant-profile-region
"Place.Source"
"Const.Source"
"R.Source"
0
"Replace"
)
; Doping in Short_Gate
(sdedr:define-constant-profile
"Const.Short_Gate"
Arsenic
950627587783517274112
)
(sdedr:define-constant-profile-region
"Place.Short_Gate"
"Const.Short_Gate"
"R.Short_Gate"
0
"Replace"
)
; Doping in R.Long_Gate
(sdedr:define-constant-profile
"Const.Long_Gate"
Arsenic
880222044041663479808
)
(sdedr:define-constant-profile-region
"Place.Long_Gate"
"Const.Long_Gate"
"R.Long_Gate"
0
"Replace"
)
; Doping in Drain
(sdedr:define-constant-profile
"Const.Drain"
Boron
555452366255843049472
)
(sdedr:define-constant-profile-region
"Place.Drain"
"Const.Drain"
"R.Drain"
0
"Replace"
)
; Doping in Gate
(sdedr:define-constant-profile
"Const.Gate"
Arsenic
1e20
)
(sdedr:define-constant-profile-region
"Place.Gate"
"Const.Gate"
"R.Gate"
0
"Replace"
)
;-------------------------------------------------------------------------------
;(sdedr:define-constant-profile (string-append "DC." NAME)
; "PhosphorusActiveConcentration" 1e20
;)
;(sdedr:define-constant-profile-material (string-append "CPM." NAME)
; (string-append "DC." NAME) "Silicon"
;)
; Creating a box-shaped refinement specification
(define RNAME "Overall")
(sdedr:define-refinement-window (string-append "RW." RNAME)
"Rectangle"
(position Xmin Ymin 0) (position Xmax Ymax 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
(define RNAME2 "Gate")
(sdedr:define-refinement-window (string-append "RW." RNAME2)
"Rectangle"
(position Xmin (+ Ymax tox) 0) (position Xmax (+ Ymax tox tg) 0)
)
(sdedr:define-refinement-size (string-append "RS." RNAME2)
(/ Ltotal 12) (/ Ymax 7)
0.0004 0.0004
)
; (sdedr:define-refinement-function(string-append "RS." RNAME)
; "DopingConcentration" "MaxTransDiff" 1.0
; )
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"Silicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-function
(string-append "RS." RNAME2)
"MaxLenInt"
"PolySilicon"
"Oxide"
0.0004
1.1
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME)
(string-append "RS." RNAME)
(string-append "RW." RNAME)
)
(sdedr:define-refinement-placement
(string-append "RP." RNAME2)
(string-append "RS." RNAME2)
(string-append "RW." RNAME2)
)
(sdesnmesh:tensor "Mesh {
maxBndCellSize direction \"x\" 0.0000001
maxBndCellSize direction \"y\" 0.0000001
maxCellSize region \"Region_0\" 0.1
window \"testbox\" 0.8 1.2 0.8 1.2 0.8 1.2
minNumberOfCells window \"testbox\" 20
grading = { 1.1 1.1 1.1 }
}")
(sde:build-mesh "-gtdr -rect" "${path}n${tid}_msh") |
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